JPS56124233A - Method for formation of platinum silicic layer - Google Patents
Method for formation of platinum silicic layerInfo
- Publication number
- JPS56124233A JPS56124233A JP2898580A JP2898580A JPS56124233A JP S56124233 A JPS56124233 A JP S56124233A JP 2898580 A JP2898580 A JP 2898580A JP 2898580 A JP2898580 A JP 2898580A JP S56124233 A JPS56124233 A JP S56124233A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- monitor
- silicic
- platinum
- formation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 title abstract 11
- 229910052697 platinum Inorganic materials 0.000 title abstract 4
- 230000015572 biosynthetic process Effects 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- 230000002159 abnormal effect Effects 0.000 abstract 1
- 238000000137 annealing Methods 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 238000002156 mixing Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
PURPOSE:To enable to indirectly monitor the condition of formation of a silicic platinum layer by a method wherein the variation of the resistance value occurring before and after the disposition process of the platinum silicic layer having the prescribed sheet resistance value. CONSTITUTION:A B-ion is injected on the surface of an N type Si substrate, excluding an SiO2 film, an annealing is performed thereon, a heat treatment is performed in an oxidizing atmosphere, the SiO2 film on the surface is removed by etching and a monitor substrate is formed. The substrate to be used for an element is pre-treated together with the monitor substrate and a Pt is sputtered in an Ar atmosphere. After formation of the Pt film having the prescribed thickness, the Ar is shut off, evacuated and picked out after cooling. After said substrate and the monitor substrate are treated in an N2 at the temperature of 600 deg.C for about 20min, they are processed in the mixture of nitric acid, hydrochloric acid and water at the mixing ratio by volume of 1:3:4 at the temperature of 80 deg.C for about 10min and then the unnecessary Pt is removed by etching. At this stage, the SiO2 film on the monitor substrate is removed using an HF solution and the sheet resistance value of the monitor substrate is measured. If this value is appropriate, the substrate for the element, which was processed together with the monitor substrate at the same time, is considered to have nothing unusual in the silicic platinum processing. Through this constitution, an abnormal substrate can be removed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2898580A JPS56124233A (en) | 1980-03-05 | 1980-03-05 | Method for formation of platinum silicic layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2898580A JPS56124233A (en) | 1980-03-05 | 1980-03-05 | Method for formation of platinum silicic layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS56124233A true JPS56124233A (en) | 1981-09-29 |
Family
ID=12263703
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2898580A Pending JPS56124233A (en) | 1980-03-05 | 1980-03-05 | Method for formation of platinum silicic layer |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS56124233A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
| JP2019067874A (en) * | 2017-09-29 | 2019-04-25 | マツダ株式会社 | Method of manufacturing peltier device and method of packaging the same |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5445572A (en) * | 1977-09-17 | 1979-04-10 | Sanyo Electric Co Ltd | Specific resistance monitoring method of epitaxial growth |
-
1980
- 1980-03-05 JP JP2898580A patent/JPS56124233A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5445572A (en) * | 1977-09-17 | 1979-04-10 | Sanyo Electric Co Ltd | Specific resistance monitoring method of epitaxial growth |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5322812A (en) * | 1991-03-20 | 1994-06-21 | Crosspoint Solutions, Inc. | Improved method of fabricating antifuses in an integrated circuit device and resulting structure |
| JP2019067874A (en) * | 2017-09-29 | 2019-04-25 | マツダ株式会社 | Method of manufacturing peltier device and method of packaging the same |
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