JPS56100448A - Semiconductor memory element - Google Patents

Semiconductor memory element

Info

Publication number
JPS56100448A
JPS56100448A JP328580A JP328580A JPS56100448A JP S56100448 A JPS56100448 A JP S56100448A JP 328580 A JP328580 A JP 328580A JP 328580 A JP328580 A JP 328580A JP S56100448 A JPS56100448 A JP S56100448A
Authority
JP
Japan
Prior art keywords
wiring
source
semiconductor memory
memory element
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP328580A
Other languages
Japanese (ja)
Inventor
Izumi Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP328580A priority Critical patent/JPS56100448A/en
Publication of JPS56100448A publication Critical patent/JPS56100448A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/52Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)

Abstract

PURPOSE:To reduce the width of a wiring region without increasing wiring resistance and thus to make the wiring highly integrated by leasing out the Al wiring from the drain and source of MOSFET on the surface of a semiconductor substance and by forming the same into a multilayer structure. CONSTITUTION:The Al wiring 9 is led out from the surface of the source 2 and covered with an insulation film 10, whereon the Al wiring led out from the surface of the rain 3 is overlapped. By this constitution, the width of the source 2 can be made smaller by about 20-30% than the usual one, whereby the density of the wiring can be made higher.
JP328580A 1980-01-16 1980-01-16 Semiconductor memory element Pending JPS56100448A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP328580A JPS56100448A (en) 1980-01-16 1980-01-16 Semiconductor memory element

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP328580A JPS56100448A (en) 1980-01-16 1980-01-16 Semiconductor memory element

Publications (1)

Publication Number Publication Date
JPS56100448A true JPS56100448A (en) 1981-08-12

Family

ID=11553126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP328580A Pending JPS56100448A (en) 1980-01-16 1980-01-16 Semiconductor memory element

Country Status (1)

Country Link
JP (1) JPS56100448A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204599A (en) * 1987-02-20 1988-08-24 Toshiba Corp Non-volatile semiconductor memory
US6803268B2 (en) 1997-07-31 2004-10-12 Nec Electronics Corporation EEPROM semiconductor device and method of fabricating the same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013115A (en) * 1973-06-04 1975-02-12

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5013115A (en) * 1973-06-04 1975-02-12

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63204599A (en) * 1987-02-20 1988-08-24 Toshiba Corp Non-volatile semiconductor memory
JP2607504B2 (en) * 1987-02-20 1997-05-07 株式会社東芝 Non-volatile semiconductor memory
US6803268B2 (en) 1997-07-31 2004-10-12 Nec Electronics Corporation EEPROM semiconductor device and method of fabricating the same

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