JPS5558530A - Pellet treatment to facilitate pattern recognition - Google Patents

Pellet treatment to facilitate pattern recognition

Info

Publication number
JPS5558530A
JPS5558530A JP3808678A JP3808678A JPS5558530A JP S5558530 A JPS5558530 A JP S5558530A JP 3808678 A JP3808678 A JP 3808678A JP 3808678 A JP3808678 A JP 3808678A JP S5558530 A JPS5558530 A JP S5558530A
Authority
JP
Japan
Prior art keywords
layer
sticked
domains
pellet
film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3808678A
Other languages
Japanese (ja)
Inventor
Kazuo Inoue
Yoshio Yamamoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP3808678A priority Critical patent/JPS5558530A/en
Publication of JPS5558530A publication Critical patent/JPS5558530A/en
Pending legal-status Critical Current

Links

Landscapes

  • Bipolar Transistors (AREA)
  • Wire Bonding (AREA)

Abstract

PURPOSE: To facilitate an optical detection of the pattern of an Al layer exposed on the surface of a semiconductor pellet and an insulating film layer by providing V layer between the Al-layer and the pellet surface or keeping the insulating film layer of more than 10,000Å thick.
CONSTITUTION: An N-type base domain 2 is formed through diffusion on a P-type semiconductor substrate 1 working as a collector, a P-type emitter domain 3 is provided therein, an SiO2 film 4 is sticked on the surface, and a hole is perforated correspondingly to the domains 2 and 3. Next, an Al layer in contact with the domains 2 and 3 is formed, however, V layer is sticked and built up first in this case to provide the Al layer, the Al layer and the V layer are removed selectively and continuously with an etching agent of phosphoric acid group through photoetching, and the V-layer 5 and the Al-layer 6 are left present on the domains 2 and 3. Then, a SiO2 film 7 including P and As is sticked entirely, the layer 6 is removed, and an interface of these patterns is thus detected optically. The pattern is now ready for locating remarkably at high precision.
COPYRIGHT: (C)1980,JPO&Japio
JP3808678A 1978-04-03 1978-04-03 Pellet treatment to facilitate pattern recognition Pending JPS5558530A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3808678A JPS5558530A (en) 1978-04-03 1978-04-03 Pellet treatment to facilitate pattern recognition

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3808678A JPS5558530A (en) 1978-04-03 1978-04-03 Pellet treatment to facilitate pattern recognition

Publications (1)

Publication Number Publication Date
JPS5558530A true JPS5558530A (en) 1980-05-01

Family

ID=12515653

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3808678A Pending JPS5558530A (en) 1978-04-03 1978-04-03 Pellet treatment to facilitate pattern recognition

Country Status (1)

Country Link
JP (1) JPS5558530A (en)

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