JPS553834A - Hand shower with water-stop valve - Google Patents

Hand shower with water-stop valve

Info

Publication number
JPS553834A
JPS553834A JP7665878A JP7665878A JPS553834A JP S553834 A JPS553834 A JP S553834A JP 7665878 A JP7665878 A JP 7665878A JP 7665878 A JP7665878 A JP 7665878A JP S553834 A JPS553834 A JP S553834A
Authority
JP
Japan
Prior art keywords
water
valve
dent
release
stop valve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP7665878A
Other languages
Japanese (ja)
Inventor
Yasuko Shiomi
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Priority to JP7665878A priority Critical patent/JPS553834A/en
Publication of JPS553834A publication Critical patent/JPS553834A/en
Pending legal-status Critical Current

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Abstract

PURPOSE: To permit the instantaneous change-over operation of the release and stoppage of hot water or cold water by attaching a water-stop valve to hand shower.
CONSTITUTION: When pushing the button 1 by hand in the direction of the arrow B, the movement is transmitted through the coupler 2, the bar 3, and the coupler 4 to the valve 5 and thereby the valve makes a rotation around the axle 6 to push against the dent 7 of the inner wall. And, the projection 8 is fitted into the dent 9' of the plate spring 9, so that the release of hot water or cold water can be continuously allowed. Also, when pushing the button in the direction of the arrow C, the valve 5 comes out of the dent 7 of the inner wall and exposed to water pressure, so that the release of hot water or cold water can be stopped.
COPYRIGHT: (C)1980,JPO&Japio
JP7665878A 1978-06-23 1978-06-23 Hand shower with water-stop valve Pending JPS553834A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP7665878A JPS553834A (en) 1978-06-23 1978-06-23 Hand shower with water-stop valve

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP7665878A JPS553834A (en) 1978-06-23 1978-06-23 Hand shower with water-stop valve

Publications (1)

Publication Number Publication Date
JPS553834A true JPS553834A (en) 1980-01-11

Family

ID=13611497

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7665878A Pending JPS553834A (en) 1978-06-23 1978-06-23 Hand shower with water-stop valve

Country Status (1)

Country Link
JP (1) JPS553834A (en)

Cited By (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119858U (en) * 1982-02-09 1983-08-15 細見　均 Bath hand shower
JPS6417484A (en) * 1987-07-13 1989-01-20 Nippon Telegraph & Telephone Semiconductor light emitting element
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US5159413A (en) * 1990-04-20 1992-10-27 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US6110757A (en) * 1996-08-07 2000-08-29 Showa Denko K. K. Method of forming epitaxial wafer for light-emitting device including an active layer having a two-phase structure
US6147363A (en) * 1997-12-25 2000-11-14 Showa Denko K.K. Nitride semiconductor light-emitting device and manufacturing method of the same
US6346720B1 (en) 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US6541797B1 (en) 1997-12-04 2003-04-01 Showa Denko K. K. Group-III nitride semiconductor light-emitting device
US7034330B2 (en) 2002-10-22 2006-04-25 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor device, production method thereof and light-emitting diode
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
US7453091B2 (en) 2004-03-04 2008-11-18 Showa Denko K.K. Gallium nitride-based semiconductor device
US7456445B2 (en) 2004-05-24 2008-11-25 Showa Denko K.K. Group III nitride semiconductor light emitting device
US7495261B2 (en) 2004-03-18 2009-02-24 Showa Denko K.K. Group III nitride semiconductor light-emitting device and method of producing the same
US7646027B2 (en) 2005-05-06 2010-01-12 Showa Denko K.K. Group III nitride semiconductor stacked structure
DE19648955B4 (en) * 1995-11-27 2010-06-02 Sumitomo Chemical Co. Ltd. III-V compound semiconductor device
US7781777B2 (en) 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
DE102009011740A1 (en) * 2009-03-09 2010-09-23 Grohe Ag Hand shower for use in sanitary area, has adjusting element provided for changing flow cross-section of water supply, where adjusting element includes airfoil that is steplessly and rotatably arranged within water supply
US7989926B2 (en) 2005-09-20 2011-08-02 Showa Denko K.K. Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof
US8043977B2 (en) 2005-08-08 2011-10-25 Showa Denko K.K. Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate

Cited By (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58119858U (en) * 1982-02-09 1983-08-15 細見　均 Bath hand shower
JPS6417484A (en) * 1987-07-13 1989-01-20 Nippon Telegraph & Telephone Semiconductor light emitting element
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US5159413A (en) * 1990-04-20 1992-10-27 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5164359A (en) * 1990-04-20 1992-11-17 Eaton Corporation Monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US5356831A (en) * 1990-04-20 1994-10-18 Eaton Corporation Method of making a monolithic integrated circuit having compound semiconductor layer epitaxially grown on ceramic substrate
US6346720B1 (en) 1995-02-03 2002-02-12 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same, and light emitting element
US6472298B2 (en) 1995-02-03 2002-10-29 Sumitomo Chemical Company, Limited Layered group III-V compound semiconductor, method of manufacturing the same and light emitting element
DE19648955B4 (en) * 1995-11-27 2010-06-02 Sumitomo Chemical Co. Ltd. III-V compound semiconductor device
US6110757A (en) * 1996-08-07 2000-08-29 Showa Denko K. K. Method of forming epitaxial wafer for light-emitting device including an active layer having a two-phase structure
US6541797B1 (en) 1997-12-04 2003-04-01 Showa Denko K. K. Group-III nitride semiconductor light-emitting device
US6147363A (en) * 1997-12-25 2000-11-14 Showa Denko K.K. Nitride semiconductor light-emitting device and manufacturing method of the same
US6335219B1 (en) 1997-12-25 2002-01-01 Showa Denko K.K. Nitride semiconductor light-emitting device and manufacturing method of the same
US7034330B2 (en) 2002-10-22 2006-04-25 Showa Denko Kabushiki Kaisha Group-III nitride semiconductor device, production method thereof and light-emitting diode
US7436045B2 (en) 2004-03-04 2008-10-14 Showa Denko K.K. Gallium nitride-based semiconductor device
US7453091B2 (en) 2004-03-04 2008-11-18 Showa Denko K.K. Gallium nitride-based semiconductor device
US7781777B2 (en) 2004-03-08 2010-08-24 Showa Denko K.K. Pn junction type group III nitride semiconductor light-emitting device
US7495261B2 (en) 2004-03-18 2009-02-24 Showa Denko K.K. Group III nitride semiconductor light-emitting device and method of producing the same
US7456445B2 (en) 2004-05-24 2008-11-25 Showa Denko K.K. Group III nitride semiconductor light emitting device
US7646027B2 (en) 2005-05-06 2010-01-12 Showa Denko K.K. Group III nitride semiconductor stacked structure
US8043977B2 (en) 2005-08-08 2011-10-25 Showa Denko K.K. Method of manufacturing a semiconductor device having a group-III nitride superlattice layer on a silicon substrate
US8222674B2 (en) 2005-08-08 2012-07-17 Showa Denko K.K. Semiconductor device having a group-III nitride superlattice layer on a silicon substrate
US7989926B2 (en) 2005-09-20 2011-08-02 Showa Denko K.K. Semiconductor device including non-stoichiometric silicon carbide layer and method of fabrication thereof
DE102009011740A1 (en) * 2009-03-09 2010-09-23 Grohe Ag Hand shower for use in sanitary area, has adjusting element provided for changing flow cross-section of water supply, where adjusting element includes airfoil that is steplessly and rotatably arranged within water supply
DE102009011740B4 (en) * 2009-03-09 2013-01-17 Grohe Ag Handheld shower

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