JPS55113318A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS55113318A
JPS55113318A JP1980979A JP1980979A JPS55113318A JP S55113318 A JPS55113318 A JP S55113318A JP 1980979 A JP1980979 A JP 1980979A JP 1980979 A JP1980979 A JP 1980979A JP S55113318 A JPS55113318 A JP S55113318A
Authority
JP
Japan
Prior art keywords
increased
film
sih
cohesion
photoresist
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1980979A
Other languages
Japanese (ja)
Inventor
Yoshiaki Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP1980979A priority Critical patent/JPS55113318A/en
Publication of JPS55113318A publication Critical patent/JPS55113318A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To increase the reliability of the product by a method wherein the crystal grains of the surface of a poly-Si layer formed on a Si substrate through a SiO2 film are made larger than those in the boundary with the SiO2 film, and thereby the cohesion with the photoresist is increased.
CONSTITUTION: Si substrate 1 coated with oxide film 2 is placed in a reaction tube. SiH4 gas is drawn into the tube, and amorphous Si layer 3 is formed by thermal decomposition under the condition of low pressure. Subsequently, when the decomposition pressure of SiH4 is brought to normal pressure by introducing N2 gas, surface layer 3 with crystal Si of larger grain size (about 0.1W1μ) is obtained. As a result, the cohesion with the photoresist is increased, and resist peeling-off is greatly reduced without dehydration baking, so that the reliability of the product is increased.
COPYRIGHT: (C)1980,JPO&Japio
JP1980979A 1979-02-23 1979-02-23 Manufacture of semiconductor device Pending JPS55113318A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1980979A JPS55113318A (en) 1979-02-23 1979-02-23 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1980979A JPS55113318A (en) 1979-02-23 1979-02-23 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS55113318A true JPS55113318A (en) 1980-09-01

Family

ID=12009654

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1980979A Pending JPS55113318A (en) 1979-02-23 1979-02-23 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS55113318A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229931A (en) * 1986-03-19 1987-10-08 ザ　ゼネラル　エレクトリツク　カンパニ−，ピ−．エル．シ− Evaporation

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62229931A (en) * 1986-03-19 1987-10-08 ザ　ゼネラル　エレクトリツク　カンパニ−，ピ−．エル．シ− Evaporation
JP2565329B2 (en) * 1986-03-19 1996-12-18 ザ ゼネラル エレクトリツク カンパニ−，ピ−．エル．シ− Deposition method

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