JPS55111170A - Method of manufacturing semiconductor device - Google Patents

Method of manufacturing semiconductor device

Info

Publication number
JPS55111170A
JPS55111170A JP1882979A JP1882979A JPS55111170A JP S55111170 A JPS55111170 A JP S55111170A JP 1882979 A JP1882979 A JP 1882979A JP 1882979 A JP1882979 A JP 1882979A JP S55111170 A JPS55111170 A JP S55111170A
Authority
JP
Japan
Prior art keywords
silicon layer
polycrystalline silicon
impurity
laser light
metal film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1882979A
Other languages
Japanese (ja)
Inventor
Kunio Nakamura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP1882979A priority Critical patent/JPS55111170A/en
Publication of JPS55111170A publication Critical patent/JPS55111170A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To provide a source and a drain regions with a small junction depth without causing the exfoliation of polycrystalline silicon, by irradiating laser light for heat treatment as a polycrystalline silicon layer is coated with a metal film.
CONSTITUTION: A thick field insulating film 2, a gate insulating film 3 and polycrystalline silicon layer 4 doped with an impurity and provided on a semiconductor substrate 1. A metal film 5 of aluminum or the like is coated all over the polycrystalline silicon layer 4. Etching is performed for gate electrode wiring work. Ions of an impurity (such as arsenic) inverse in electroconductive type to the substrate 1 are injected into a source and a drain regions 7. Laser light 8 is irradiated to activate the injected impurity. Since the entry of the laser light 8 into the polycrystalline silicon layer 4 is prevented by the metal film 5 provided on the silicon layer 4 and having a high reflexibility, exfoliation due to overheating is preventd. A junction depth of 0.1μm or less can be set by applying injection energy of 50keV or less.
COPYRIGHT: (C)1980,JPO&Japio
JP1882979A 1979-02-20 1979-02-20 Method of manufacturing semiconductor device Pending JPS55111170A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1882979A JPS55111170A (en) 1979-02-20 1979-02-20 Method of manufacturing semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1882979A JPS55111170A (en) 1979-02-20 1979-02-20 Method of manufacturing semiconductor device

Publications (1)

Publication Number Publication Date
JPS55111170A true JPS55111170A (en) 1980-08-27

Family

ID=11982446

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1882979A Pending JPS55111170A (en) 1979-02-20 1979-02-20 Method of manufacturing semiconductor device

Country Status (1)

Country Link
JP (1) JPS55111170A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621367A (en) * 1979-07-27 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
JPS5810831A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Manufacture of semiconductor device
JPS5842273A (en) * 1981-09-07 1983-03-11 Nec Corp Manufacture of semiconductor device
US5474940A (en) * 1992-01-08 1995-12-12 Sony Corporation Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5621367A (en) * 1979-07-27 1981-02-27 Fujitsu Ltd Manufacture of semiconductor device
JPS5810831A (en) * 1981-07-14 1983-01-21 Fujitsu Ltd Manufacture of semiconductor device
JPH035057B2 (en) * 1981-07-14 1991-01-24 Fujitsu Ltd
JPS5842273A (en) * 1981-09-07 1983-03-11 Nec Corp Manufacture of semiconductor device
US5474940A (en) * 1992-01-08 1995-12-12 Sony Corporation Method of fabricating a semiconductor device having shallow junctions in source-drain regions and a gate electrode with a low resistance silicide layer

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