JPS5469979A - Forming method of electrodes for compound semiconductor light emitting elements - Google Patents

Forming method of electrodes for compound semiconductor light emitting elements

Info

Publication number
JPS5469979A
JPS5469979A JP13660677A JP13660677A JPS5469979A JP S5469979 A JPS5469979 A JP S5469979A JP 13660677 A JP13660677 A JP 13660677A JP 13660677 A JP13660677 A JP 13660677A JP S5469979 A JPS5469979 A JP S5469979A
Authority
JP
Japan
Prior art keywords
layer
alloy
light emitting
compound semiconductor
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13660677A
Other languages
Japanese (ja)
Inventor
Norio Ozawa
Shuichi Komatsu
Katsuhiko Kawakita
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP13660677A priority Critical patent/JPS5469979A/en
Publication of JPS5469979A publication Critical patent/JPS5469979A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond

Landscapes

  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: To obtain ohmic contact with good reliability by subsequently forming a thin layer composed of gold or gold alloy of thicknesses 100 to 600 Å and a gold- zinc alloy layer at the time of forming electrodes on the p type compound semiconductor layer of a light emitting element body.
CONSTITUTION: An n type GaP layer 11 and a p type GaP layer 12 are subsequently formed on an n type GaP crystal substrate 11 to form a p-n junction 13, whereby the element body is obtained. An Au layer 24 is evaporated in this p type layer 13 side to 600 Å or under, e.g., about 300Å and an Au-Zu 3% alloy layer 24a is evaporated thereon. At this time the thickness of the layer 24 thicker than 600 Å or thinner than 100 Å will result in failure in obtaining stable ohmic contact. For example, if the thickness of Au becomes 1000 Å, the concentration becomes low even if Zn from the A:-Zn alloy of the second layer diffuses, due to which the contact resistance is considered to increase.
COPYRIGHT: (C)1979,JPO&Japio
JP13660677A 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconductor light emitting elements Pending JPS5469979A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13660677A JPS5469979A (en) 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconductor light emitting elements

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13660677A JPS5469979A (en) 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconductor light emitting elements

Publications (1)

Publication Number Publication Date
JPS5469979A true JPS5469979A (en) 1979-06-05

Family

ID=15179218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13660677A Pending JPS5469979A (en) 1977-11-16 1977-11-16 Forming method of electrodes for compound semiconductor light emitting elements

Country Status (1)

Country Link
JP (1) JPS5469979A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0584599A1 (en) * 1992-08-28 1994-03-02 Siemens Aktiengesellschaft Light-emitting diode

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0584599A1 (en) * 1992-08-28 1994-03-02 Siemens Aktiengesellschaft Light-emitting diode
US5614736A (en) * 1992-08-28 1997-03-25 Siemens Aktiengesellschaft Gallium phosphate light emitting diode with zinc-doped contact

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