JPS54126484A - Electronically adjustable potentiometer - Google Patents

Electronically adjustable potentiometer

Info

Publication number
JPS54126484A
JPS54126484A JP3360078A JP3360078A JPS54126484A JP S54126484 A JPS54126484 A JP S54126484A JP 3360078 A JP3360078 A JP 3360078A JP 3360078 A JP3360078 A JP 3360078A JP S54126484 A JPS54126484 A JP S54126484A
Authority
JP
Japan
Prior art keywords
region
type
regions
diffusion
constitution
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP3360078A
Other languages
Japanese (ja)
Other versions
JPS6362900B2 (en
Inventor
Iwao Sagara
Noriaki Kuga
Teruhiro Yoshida
Ryuichi Iketani
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP3360078A priority Critical patent/JPS54126484A/en
Publication of JPS54126484A publication Critical patent/JPS54126484A/en
Publication of JPS6362900B2 publication Critical patent/JPS6362900B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0705—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type
    • H01L27/0727—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors
    • H01L27/0738—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common comprising components of the field effect type in combination with diodes, or capacitors or resistors in combination with resistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Adjustable Resistors (AREA)
  • Semiconductor Integrated Circuits (AREA)

Abstract

PURPOSE:To eliminate completely a sliding part to improve reliability by providing a resistance type potential divider and semiconductor switching means, which are connected to connection points of it respectively, in the same semiconductor. CONSTITUTION:P<->-type well region 14 for forming plural N channel-type MOS transistors is formed in N<->-type Si substrate 13 by diffusion, and N<+>-type regions 15 and 16 and gate region 17 which is placed in the position between these regions are formed in region 14. Next, P<+>-type regins 18 and 19 for forming a P channel-type MOS transistor are formed in the position distant from region 14 by diffusion, and gate region 22 is provided between them. In this constitution, region 19 is used commonly as resistance type potential divider 24, and contact electrodes 26, 29 and 30 are fitted to region 19 while insulating them from one another by SiO2 film 21 and are connected to terminals 6, 3 and 4. Then, regions 16 and 18 are connected by electrode 20 and are connected to leading-out terminal 9, and gates 17 and 22 are connected through diode 12 and are led out to terminal 8.
JP3360078A 1978-03-25 1978-03-25 Electronically adjustable potentiometer Granted JPS54126484A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3360078A JPS54126484A (en) 1978-03-25 1978-03-25 Electronically adjustable potentiometer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3360078A JPS54126484A (en) 1978-03-25 1978-03-25 Electronically adjustable potentiometer

Publications (2)

Publication Number Publication Date
JPS54126484A true JPS54126484A (en) 1979-10-01
JPS6362900B2 JPS6362900B2 (en) 1988-12-05

Family

ID=12390968

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3360078A Granted JPS54126484A (en) 1978-03-25 1978-03-25 Electronically adjustable potentiometer

Country Status (1)

Country Link
JP (1) JPS54126484A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6131073A (en) * 1996-06-07 2000-10-10 Denso Corporation Electronic circuit with an operating characteristic correcting function
JP2009003886A (en) * 2007-06-25 2009-01-08 Samsung Electronics Co Ltd Voltage regulator circuit

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6131073A (en) * 1996-06-07 2000-10-10 Denso Corporation Electronic circuit with an operating characteristic correcting function
JP2009003886A (en) * 2007-06-25 2009-01-08 Samsung Electronics Co Ltd Voltage regulator circuit

Also Published As

Publication number Publication date
JPS6362900B2 (en) 1988-12-05

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