JPS53102669A - Manufacture for semiconductor device - Google Patents

Manufacture for semiconductor device

Info

Publication number
JPS53102669A
JPS53102669A JP1680177A JP1680177A JPS53102669A JP S53102669 A JPS53102669 A JP S53102669A JP 1680177 A JP1680177 A JP 1680177A JP 1680177 A JP1680177 A JP 1680177A JP S53102669 A JPS53102669 A JP S53102669A
Authority
JP
Japan
Prior art keywords
manufacture
semiconductor device
volatge
breakdown
increase
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1680177A
Other languages
Japanese (ja)
Inventor
Kazumichi Omura
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP1680177A priority Critical patent/JPS53102669A/en
Publication of JPS53102669A publication Critical patent/JPS53102669A/en
Pending legal-status Critical Current

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  • Thyristors (AREA)

Abstract

PURPOSE: To increase the breakdown volatge of pn junction formed, by injecting ion with tilted ion beam.
COPYRIGHT: (C)1978,JPO&Japio
JP1680177A 1977-02-18 1977-02-18 Manufacture for semiconductor device Pending JPS53102669A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1680177A JPS53102669A (en) 1977-02-18 1977-02-18 Manufacture for semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1680177A JPS53102669A (en) 1977-02-18 1977-02-18 Manufacture for semiconductor device

Publications (1)

Publication Number Publication Date
JPS53102669A true JPS53102669A (en) 1978-09-07

Family

ID=11926248

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1680177A Pending JPS53102669A (en) 1977-02-18 1977-02-18 Manufacture for semiconductor device

Country Status (1)

Country Link
JP (1) JPS53102669A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155369A (en) * 1990-09-28 1992-10-13 Applied Materials, Inc. Multiple angle implants for shallow implant
US5371023A (en) * 1991-06-11 1994-12-06 Hitachi, Ltd. Gate circuit, semiconductor integrated circuit device and method of fabrication thereof, semiconductor memory and microprocessor

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5155369A (en) * 1990-09-28 1992-10-13 Applied Materials, Inc. Multiple angle implants for shallow implant
US5371023A (en) * 1991-06-11 1994-12-06 Hitachi, Ltd. Gate circuit, semiconductor integrated circuit device and method of fabrication thereof, semiconductor memory and microprocessor

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