JPS5234683A - Mos-type transistor circuit - Google Patents

Mos-type transistor circuit

Info

Publication number
JPS5234683A
JPS5234683A JP10044175A JP10044175A JPS5234683A JP S5234683 A JPS5234683 A JP S5234683A JP 10044175 A JP10044175 A JP 10044175A JP 10044175 A JP10044175 A JP 10044175A JP S5234683 A JPS5234683 A JP S5234683A
Authority
JP
Japan
Prior art keywords
mos
type transistor
transistor circuit
circuit
materialize
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10044175A
Other languages
Japanese (ja)
Other versions
JPS5634095B2 (en
Inventor
Shigeru Arita
Masao Kayahara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP10044175A priority Critical patent/JPS5234683A/en
Publication of JPS5234683A publication Critical patent/JPS5234683A/en
Publication of JPS5634095B2 publication Critical patent/JPS5634095B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
    • H01L27/088—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate
    • H01L27/092—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only the components being field-effect transistors with insulated gate complementary MIS field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Electronic Switches (AREA)

Abstract

PURPOSE:To obtain the MOS-type transistor circuit which can materialize the MOS-type transistor resistance having very small resistance value variation.
JP10044175A 1975-08-18 1975-08-18 Mos-type transistor circuit Granted JPS5234683A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10044175A JPS5234683A (en) 1975-08-18 1975-08-18 Mos-type transistor circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10044175A JPS5234683A (en) 1975-08-18 1975-08-18 Mos-type transistor circuit

Publications (2)

Publication Number Publication Date
JPS5234683A true JPS5234683A (en) 1977-03-16
JPS5634095B2 JPS5634095B2 (en) 1981-08-07

Family

ID=14274010

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10044175A Granted JPS5234683A (en) 1975-08-18 1975-08-18 Mos-type transistor circuit

Country Status (1)

Country Link
JP (1) JPS5234683A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7453289B2 (en) 2002-10-21 2008-11-18 Advantest Corporation Transmission circuit, CMOS semiconductor device, and design method thereof

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7453289B2 (en) 2002-10-21 2008-11-18 Advantest Corporation Transmission circuit, CMOS semiconductor device, and design method thereof

Also Published As

Publication number Publication date
JPS5634095B2 (en) 1981-08-07

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