JPS521877B2 - - Google Patents

Info

Publication number
JPS521877B2
JPS521877B2 JP9600772A JP9600772A JPS521877B2 JP S521877 B2 JPS521877 B2 JP S521877B2 JP 9600772 A JP9600772 A JP 9600772A JP 9600772 A JP9600772 A JP 9600772A JP S521877 B2 JPS521877 B2 JP S521877B2
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
JP9600772A
Other languages
Japanese (ja)
Other versions
JPS4953386A (fr
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP9600772A priority Critical patent/JPS521877B2/ja
Priority to CA181,779A priority patent/CA1004780A/en
Priority to GB4475173A priority patent/GB1429696A/en
Priority to DE19732348262 priority patent/DE2348262A1/de
Priority to NL7313221A priority patent/NL184814C/xx
Priority to IT5272573A priority patent/IT994322B/it
Priority to FR7334414A priority patent/FR2200636B1/fr
Publication of JPS4953386A publication Critical patent/JPS4953386A/ja
Publication of JPS521877B2 publication Critical patent/JPS521877B2/ja
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0805Capacitors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0641Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region without components of the field effect type
    • H01L27/0647Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. vertical bipolar transistor and bipolar lateral transistor and resistor
    • H01L27/0652Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0658Vertical bipolar transistor in combination with resistors or capacitors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Semiconductor Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
JP9600772A 1972-09-25 1972-09-25 Expired JPS521877B2 (fr)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP9600772A JPS521877B2 (fr) 1972-09-25 1972-09-25
CA181,779A CA1004780A (en) 1972-09-25 1973-09-24 Semiconductor integrated circuit mis structure
GB4475173A GB1429696A (fr) 1972-09-25 1973-09-24
DE19732348262 DE2348262A1 (de) 1972-09-25 1973-09-25 Integrierte halbleiterschaltung
NL7313221A NL184814C (nl) 1972-09-25 1973-09-25 Geintegreerde halfgeleiderschakeling.
IT5272573A IT994322B (it) 1972-09-25 1973-09-25 Circuito integrato a semiconduttore
FR7334414A FR2200636B1 (fr) 1972-09-25 1973-09-25

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9600772A JPS521877B2 (fr) 1972-09-25 1972-09-25

Publications (2)

Publication Number Publication Date
JPS4953386A JPS4953386A (fr) 1974-05-23
JPS521877B2 true JPS521877B2 (fr) 1977-01-18

Family

ID=14153103

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9600772A Expired JPS521877B2 (fr) 1972-09-25 1972-09-25

Country Status (7)

Country Link
JP (1) JPS521877B2 (fr)
CA (1) CA1004780A (fr)
DE (1) DE2348262A1 (fr)
FR (1) FR2200636B1 (fr)
GB (1) GB1429696A (fr)
IT (1) IT994322B (fr)
NL (1) NL184814C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5994450A (ja) * 1982-11-19 1984-05-31 Nec Kyushu Ltd 半導体装置の製造方法
US5177587A (en) * 1989-07-21 1993-01-05 Linear Technology Corporation Push-back junction isolation semiconductor structure and method
JP5974978B2 (ja) 2013-05-29 2016-08-23 信越半導体株式会社 シリコン単結晶製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1539873B2 (de) * 1966-10-18 1971-03-11 Deutsche Itt Industries Gmbh, 7800 Freiburg Transistor
US3544863A (en) * 1968-10-29 1970-12-01 Motorola Inc Monolithic integrated circuit substructure with epitaxial decoupling capacitance
FR2036530A5 (fr) * 1969-03-24 1970-12-24 Radiotechnique Compelec

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010163398A (ja) * 2009-01-16 2010-07-29 Hisamitsu Pharmaceut Co Inc シート状貼付剤

Also Published As

Publication number Publication date
NL184814B (nl) 1989-06-01
IT994322B (it) 1975-10-20
JPS4953386A (fr) 1974-05-23
DE2348262A1 (de) 1974-04-18
FR2200636A1 (fr) 1974-04-19
NL7313221A (fr) 1974-03-27
GB1429696A (fr) 1976-03-24
FR2200636B1 (fr) 1978-06-30
NL184814C (nl) 1989-11-01
CA1004780A (en) 1977-02-01

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