JPS51136248A - Ferroelectric fet memory device - Google Patents

Ferroelectric fet memory device

Info

Publication number
JPS51136248A
JPS51136248A JP5957475A JP5957475A JPS51136248A JP S51136248 A JPS51136248 A JP S51136248A JP 5957475 A JP5957475 A JP 5957475A JP 5957475 A JP5957475 A JP 5957475A JP S51136248 A JPS51136248 A JP S51136248A
Authority
JP
Japan
Prior art keywords
memory device
fet memory
ferroelectric fet
ferroelectric
accumulating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5957475A
Other languages
Japanese (ja)
Inventor
Hidetoshi Tsuchiya
Kentaro Ito
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba TEC Corp
Original Assignee
Tokyo Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electric Co Ltd filed Critical Tokyo Electric Co Ltd
Priority to JP5957475A priority Critical patent/JPS51136248A/en
Publication of JPS51136248A publication Critical patent/JPS51136248A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)

Abstract

PURPOSE:High speed and high density integrated ferro electric FET memory device allowed by accumulating semi-conductor and ferroelectric substance on substrate on isolator board.
JP5957475A 1975-05-21 1975-05-21 Ferroelectric fet memory device Pending JPS51136248A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5957475A JPS51136248A (en) 1975-05-21 1975-05-21 Ferroelectric fet memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5957475A JPS51136248A (en) 1975-05-21 1975-05-21 Ferroelectric fet memory device

Publications (1)

Publication Number Publication Date
JPS51136248A true JPS51136248A (en) 1976-11-25

Family

ID=13117126

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5957475A Pending JPS51136248A (en) 1975-05-21 1975-05-21 Ferroelectric fet memory device

Country Status (1)

Country Link
JP (1) JPS51136248A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322483A (en) * 1989-06-19 1991-01-30 Fujitsu Ltd Thin-film transistor
EP0496764A1 (en) * 1989-10-20 1992-08-05 Radiant Technologies Ferro-electric non-volatile variable resistive element

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
TRANSACTIONS OF IEEE ELECTRON DEVICES#M8=1974 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0322483A (en) * 1989-06-19 1991-01-30 Fujitsu Ltd Thin-film transistor
EP0496764A1 (en) * 1989-10-20 1992-08-05 Radiant Technologies Ferro-electric non-volatile variable resistive element

Similar Documents

Publication Publication Date Title
AU503228B2 (en) Semiconductor device
JPS5245288A (en) Semiconductor device
JPS51117880A (en) Semiconductor device
JPS527678A (en) Semiconductor device
GB1543074A (en) Bistable field effect transistor devices
JPS56162870A (en) Semiconductor device
JPS5266360A (en) Delay circuit using fet transistor
JPS51131185A (en) Electronic scintillation device
JPS5279661A (en) Semiconductor device
JPS5238892A (en) Semiconductor device
JPS5234678A (en) Multiiterminal inversion controlled semiconductor device
JPS52101967A (en) Semiconductor device
JPS529380A (en) Semiconductor device
JPS52119068A (en) Semiconductor device
GB1558281A (en) Semiconductor device and logic circuit constituted by the semiconductor device
DE3165313D1 (en) Semiconductor memory device with substrate voltage biasing
JPS51136248A (en) Ferroelectric fet memory device
JPS5360582A (en) Semiconductor ingegrated circuit device
JPS5242381A (en) Semiconductor storage device
JPS526472A (en) Semiconductor device
JPS57141970A (en) Semiconductor device
MY8100312A (en) Semiconductor memory device
JPS51122362A (en) Semiconductor microwave device
JPS51117884A (en) Semiconductor device
JPS5276876A (en) Semiconductor device