JPS5045527A - - Google Patents

Info

Publication number
JPS5045527A
JPS5045527A JP49086691A JP8669174A JPS5045527A JP S5045527 A JPS5045527 A JP S5045527A JP 49086691 A JP49086691 A JP 49086691A JP 8669174 A JP8669174 A JP 8669174A JP S5045527 A JPS5045527 A JP S5045527A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP49086691A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS5045527A publication Critical patent/JPS5045527A/ja
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
JP49086691A 1973-07-30 1974-07-30 Pending JPS5045527A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US38387373A 1973-07-30 1973-07-30

Publications (1)

Publication Number Publication Date
JPS5045527A true JPS5045527A (en) 1975-04-23

Family

ID=23515092

Family Applications (1)

Application Number Title Priority Date Filing Date
JP49086691A Pending JPS5045527A (en) 1973-07-30 1974-07-30

Country Status (3)

Country Link
JP (1) JPS5045527A (en)
DE (1) DE2436648A1 (en)
FR (1) FR2246021A1 (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121450A (en) * 1974-08-15 1976-02-20 Nippon Electric Co
JP2011204347A (en) * 2010-03-04 2011-10-13 Semiconductor Energy Lab Co Ltd Semiconductor memory device and driving method of semiconductor memory device
JP2014041689A (en) * 2010-04-07 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2015201251A (en) * 2010-11-12 2015-11-12 株式会社半導体エネルギー研究所 semiconductor device
JP2020025103A (en) * 2010-02-05 2020-02-13 株式会社半導体エネルギー研究所 Semiconductor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3533089A (en) * 1969-05-16 1970-10-06 Shell Oil Co Single-rail mosfet memory with capacitive storage

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5121450A (en) * 1974-08-15 1976-02-20 Nippon Electric Co
JP2020025103A (en) * 2010-02-05 2020-02-13 株式会社半導体エネルギー研究所 Semiconductor device
JP2011204347A (en) * 2010-03-04 2011-10-13 Semiconductor Energy Lab Co Ltd Semiconductor memory device and driving method of semiconductor memory device
JP2014041689A (en) * 2010-04-07 2014-03-06 Semiconductor Energy Lab Co Ltd Semiconductor device
JP2015201251A (en) * 2010-11-12 2015-11-12 株式会社半導体エネルギー研究所 semiconductor device
US9460772B2 (en) 2010-11-12 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2018029198A (en) * 2010-11-12 2018-02-22 株式会社半導体エネルギー研究所 Semiconductor device
JP2019135773A (en) * 2010-11-12 2019-08-15 株式会社半導体エネルギー研究所 Semiconductor device
KR20200123070A (en) * 2010-11-12 2020-10-28 가부시키가이샤 한도오따이 에네루기 켄큐쇼 Memory device and semiconductor device

Also Published As

Publication number Publication date
FR2246021A1 (en) 1975-04-25
DE2436648A1 (en) 1975-03-06

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