JPH1174299A - Bump-forming device and method - Google Patents

Bump-forming device and method

Info

Publication number
JPH1174299A
JPH1174299A JP9232010A JP23201097A JPH1174299A JP H1174299 A JPH1174299 A JP H1174299A JP 9232010 A JP9232010 A JP 9232010A JP 23201097 A JP23201097 A JP 23201097A JP H1174299 A JPH1174299 A JP H1174299A
Authority
JP
Japan
Prior art keywords
metal
wire
bump
metal plate
thin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP9232010A
Other languages
Japanese (ja)
Inventor
Hirotaka Kobayashi
寛隆 小林
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Priority to JP9232010A priority Critical patent/JPH1174299A/en
Publication of JPH1174299A publication Critical patent/JPH1174299A/en
Pending legal-status Critical Current

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    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods
    • H01L2224/113—Manufacturing methods by local deposition of the material of the bump connector
    • H01L2224/1133—Manufacturing methods by local deposition of the material of the bump connector in solid form
    • H01L2224/1134—Stud bumping, i.e. using a wire-bonding apparatus
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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Wire Bonding (AREA)

Abstract

PROBLEM TO BE SOLVED: To form a small cubic volume bump at the normal temperature using a relatively simple method and device by providing a protruding part, with which a contracted part is formed, on the feeding side of a metal fine wire junction part which is a part of a jointing means. SOLUTION: A protruding part 15 is provided in the vicinity of the delivery part of the wire 13 located on the back side of the pressure bonded surface 12 on the tip part 11 of a wedge tool, and the back part of the wire is squeezed by a protruding part 15 so that the wire can be cut easily. A clamp is moved to the back side, or the wedge tool 11 is moved in a pressure-bonded state, and the wire 13 is brought in the state wherein it is easily teared off. As a result, the wire 13 can be cut without moving the clamp forwards and backwards complicatedly, the positioning of wire tip can be made easy, the cutting position can be stabilized, and a small cubic volume bump can be formed by a realatively simple method.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【０００１】[0001]

【発明の属する技術分野】本発明は、バンプ形成装置お
よびバンプ形成方法に関し、特に半導体装置の電極と基
板とに設けられて両者を接続するバンプの形成装置およ
びこのようなバンプの形成方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a bump forming apparatus and a bump forming method, and more particularly to a bump forming apparatus provided on an electrode and a substrate of a semiconductor device and connecting the two, and a method of forming such a bump.

【０００２】[0002]

【従来の技術】半導体装置の多極化に伴い、チップとリ
ードフレームを接続する方法として従来のワイヤボンデ
ィング方式に代えて、ワイヤレスボンディング方式が用
いられるようになってきている。ワイヤレスボンディン
グ方式の例えばフリップチップ方式は、通常、チップ表
面にはんだバンプを形成し、チップを裏返して基板に位
置合わせした後、はんだを溶かして一度に接続する方法
を採っている。このようにすると接点を平面状に設ける
ことができ、多数の入出力をチップに設けることができ
る。2. Description of the Related Art With the increase in the number of poles of a semiconductor device, a wireless bonding method has been used instead of a conventional wire bonding method as a method of connecting a chip and a lead frame. For example, the flip-chip method of the wireless bonding method usually employs a method in which solder bumps are formed on the chip surface, the chip is turned over, aligned with the substrate, and then the solder is melted and connected at one time. In this way, the contacts can be provided in a plane, and a large number of inputs and outputs can be provided on the chip.

【０００３】ところで、チップ上のＡｌパッド上もしく
は基板の電極上にダンプを設ける従来の方法をとして次
のようなものがある。まず、メッキやエッチングによる
方法がある。この方法は処理が複雑であってそのため処
理設備が高価格になるという欠点がある。特にチップサ
イズが大きく、バンプ数が少ない場合に特に高価にな
る。また、転写方式とよばれる方式は、バンプ形成用の
基板にリードに位置合わせしたバンプを予め形成してお
き、加圧、加熱してこのバンプをリード上に転写し、次
に転写したバンプとチップ上の電極とを位置合わせして
加圧、加熱してバンプと電極を接続する方法である。し
かし、この方法は、電極数が増えると位置合わせが困難
になるという問題がある。The following is a conventional method of providing a dump on an Al pad on a chip or an electrode on a substrate. First, there are plating and etching methods. This method has the disadvantage that the processing is complicated and the processing equipment becomes expensive. In particular, it becomes expensive especially when the chip size is large and the number of bumps is small. Also, in a method called a transfer method, a bump aligned with a lead is formed in advance on a substrate for forming a bump, and the bump is transferred to the lead by pressing and heating, and then the bump is transferred to the bump. This is a method in which the bumps and the electrodes are connected by positioning the electrodes on the chip, applying pressure and heating. However, this method has a problem that it becomes difficult to align the position when the number of electrodes increases.

【０００４】これらの問題を解決する方法として、ワイ
ヤボンディング方式に用いられるボンディング装置を用
いる方法がある。このような方式にはネイルヘッドボン
ディング法（ボールワイヤボンディング法）とウェッジ
ボンディング法の２種類の方法がある。ネイルヘッドボ
ンディング法は、さらに熱圧着法と、超音波併用熱圧着
法に分類される。As a method for solving these problems, there is a method using a bonding apparatus used in a wire bonding method. There are two types of such methods, a nail head bonding method (ball wire bonding method) and a wedge bonding method. The nail head bonding method is further classified into a thermocompression bonding method and an ultrasonic combined thermocompression bonding method.

【０００５】ネイルヘッドボンディング法はキャピラリ
と呼ばれるツールを用い、キャピラリに通されたワイヤ
の先端を溶融してボールを形成する。そうして、このボ
ールをチップの電極上に加熱圧着して接続し、ボールの
接続後ワイヤを引っ張ってボール直上でワイヤを切断し
てバンプを形成する。最初は加熱圧着時に熱と荷重のみ
を付加していたが、今では、高温でのチップの特性や接
合部の信頼性から、接合時に超音波を付加し、加熱温度
を低くすることができる超音波併用熱圧着法が主流にな
っている。この方法によると、バンプ直上には髭が発生
するためバンプ高さにばらつきが生じる。また、ボール
は後に金属ワイヤを溶融して形成するため、バンプ体積
にむらが生じる。さらに、酸化しやすい金属ワイヤを用
いる場合はボール形成を還元ガス中で行なう必要がある
が、この場合ガスの流れの影響によりさらに体積がばら
つく。また、金属ワイヤに特に酸化しやすい材料を含ん
でいる場合、還元ガス中でもボール表面に酸化物が形成
され接合強度の低下が起きる。そして、この溶融にはキ
ヤビラリーを放電トーチより高くして放電する必要があ
るためバンプ形成タクトは最低８０ｍｓ程度かかる。[0005] The nail head bonding method uses a tool called a capillary to melt the tip of a wire passed through the capillary to form a ball. Then, the ball is connected to the chip electrode by heating and pressing, and after connecting the ball, the wire is pulled and the wire is cut just above the ball to form a bump. Initially, only heat and load were added during thermocompression bonding, but now, due to the characteristics of the chip at high temperatures and the reliability of the joints, ultrasonic waves can be added at the time of joining to reduce the heating temperature. The thermocompression bonding method with sonic waves has become mainstream. According to this method, whiskers are generated immediately above the bumps, so that the bump height varies. Further, since the ball is formed by melting a metal wire later, the bump volume becomes uneven. Further, when a metal wire that is easily oxidized is used, it is necessary to form the ball in a reducing gas. In this case, the volume further varies due to the influence of the gas flow. In addition, when the metal wire contains a material that is particularly easily oxidized, an oxide is formed on the ball surface even in a reducing gas, and the bonding strength is reduced. In order to perform this melting, it is necessary to discharge by setting the cavities higher than the discharge torch, so that the bump forming tact takes at least about 80 ms.

【０００６】半田ワイヤを用いて先のようにバンプを形
成しようとすると、ボール形成時に還元ガス（例えばＨ
2 １０％、Ａｒ９０％のものなど）中で行なう必要があ
り、爆発の危険もあって安全再に問題があり、またワイ
ヤの強度からワイヤ直径が４０μｍ以上のものが必要に
なる。このためボールサイズも大きくなるため、１００
μｍ以下のボールバンプを作製することができない。ま
たボール形成後、電極接合までにボール温度が下がらな
いとボールの潰れ方にむらが生じるため、ボール冷却時
間がある程度必要であり、結果的にバンプ形成タクトが
最低１５０ｍｓ程度かかってしまう。また、半田ボール
が柔らかいためキヤビラリーのワイヤ貫通穴に詰まる場
合が有りこの場合はキヤビラリー交換が必要となる。If an attempt is made to form a bump using a solder wire as described above, a reducing gas (for example, H
( 10%, Ar 90%, etc.), there is a risk of explosion, there is a problem in safety, and from the strength of the wire, a wire diameter of 40 μm or more is required. For this reason, the ball size becomes large, so that 100
It is not possible to produce ball bumps of less than μm. In addition, if the ball temperature is not lowered until the electrode is joined after the ball is formed, unevenness occurs in the way in which the ball is crushed, so that a certain amount of ball cooling time is required, and as a result, the bump forming tact takes at least about 150 ms. Further, since the solder ball is soft, it may be clogged in the wire through hole of the cabary. In this case, it is necessary to replace the cabary.

【０００７】一方、ウェッジボンディング法あるいは超
音波法とも呼ばれる方法がある。これはワイヤをウェッ
ジツールと呼ばれるツールでチップ上の電極およびリー
ドに、超音波を加えながら圧着する方法である。図１２
に、ウェッジボンディング法によってバンプ形成を行う
方法を示した。また図１３に、ウェッジボンディング法
に用いられるウェッジツールの先端部とワイヤの変形の
様子を示す。図１２および図１３で１１はウェッジツー
ル、１２はウェッジツールの圧着面、１３はワイヤ、１
４はワイヤ挿入穴、１６は電極パッドである。また２１
はワイヤ１３を保持するクランプである。On the other hand, there is a method called a wedge bonding method or an ultrasonic method. In this method, a wire is crimped to electrodes and leads on a chip using a tool called a wedge tool while applying ultrasonic waves. FIG.
A method of forming a bump by a wedge bonding method is shown in FIG. FIG. 13 shows a state of deformation of a tip portion of a wedge tool and a wire used in the wedge bonding method. 12 and 13, 11 is a wedge tool, 12 is a crimping surface of the wedge tool, 13 is a wire, 1
4 is a wire insertion hole and 16 is an electrode pad. Also 21
Is a clamp for holding the wire 13.

【０００８】図１２に沿ってウェッジボンディング法に
よるバンプ形成方法を説明する。まず、図１２（ａ）の
ようにクランプ２１はワイヤ１３をウェッジツール１１
の後方からワイヤ挿入穴に斜めに挿入し、ワイヤ１３の
先端がウェッジツール１１の下部に構成された圧着面１
２に達する位置までワイヤ１３を送り出す。A method of forming a bump by a wedge bonding method will be described with reference to FIG. First, as shown in FIG. 12A, the clamp 21 connects the wire 13 to the wedge tool 11.
Is inserted obliquely into the wire insertion hole from the rear, and the tip of the wire 13 is attached to the crimping surface 1 formed at the lower part of the wedge tool 11.
The wire 13 is sent out to a position where the wire 13 is reached.

【０００９】次に、図１２（ｂ）に示すようにウェッジ
ツール１１を下降させ、圧着面１２によりワイヤ１３の
先端部を電極１６に押し付けてウェッジツール１１に設
けられている図示しない超音波振動源によってウェッジ
ツール１１を介してワイヤ１３に超音波振動を与えるな
がら圧着する。クランプ２１はウェッジツール１１の下
降に合わせて下降し、ウェッジツール１１がワイヤ１３
に超音波振動を与えている間は開いて後方に移動する。Next, as shown in FIG. 12 (b), the wedge tool 11 is lowered, and the tip of the wire 13 is pressed against the electrode 16 by the crimping surface 12, so that ultrasonic vibration (not shown) provided on the wedge tool 11 is provided. The wire 13 is crimped while applying ultrasonic vibration to the wire 13 via the wedge tool 11 by the source. The clamp 21 descends as the wedge tool 11 descends, and the wedge tool 11
Open and move backward while applying ultrasonic vibrations to the.

【００１０】次に超音波振動の付与が終了すると、図１
２（ｃ）に示すようにクランプ２１を閉じ、さらに後方
に移動してワイヤ１３を切断する。次に、図１２（ｄ）
に示すようにウェッジツール１１とクランプ２１を上昇
させ、次の位置に動かす。クランプ２１は閉じたままで
前方へ進むことでワイヤ１３をウェッジツール１１下に
送り出す。Next, when the application of the ultrasonic vibration is completed, FIG.
As shown in FIG. 2C, the clamp 21 is closed, and is further moved backward to cut the wire 13. Next, FIG.
The wedge tool 11 and the clamp 21 are raised and moved to the next position as shown in FIG. By moving forward with the clamp 21 closed, the wire 13 is sent out below the wedge tool 11.

【００１１】このようなウェッジツール圧着面１２でワ
イヤ１３を加圧し、超音波振動を与えて接合する方法
は、常温で接合可能であり、溶融形成が特に必要でない
ため溶融時酸化しやすい材料が使用でき、ボール形成が
ないため、ネイルヘッドボンディング法よりもより速く
バンプ形成ができ、バンプ高さをより低く、高さばらつ
きをより少なく形成することができ、また、バンプ上面
を平らに形成できるので、電極の微細ピッチ化に適した
向いていることなどが特徴である。この時、場合によっ
ては接合性を向上させるために、１００〜３００°Ｃ程
度に加熱してバンプ形状を整えることもある。The method of bonding the wire 13 by pressing the wire 13 with the wedge tool crimping surface 12 and applying ultrasonic vibration can be performed at room temperature, and a material which is easily oxidized at the time of melting because melt formation is not particularly required. Because it can be used and there is no ball formation, bump formation can be performed faster than nail head bonding method, lower bump height, lower height variation can be formed, and bump upper surface can be formed flat Therefore, it is suitable for forming a fine pitch of the electrodes. At this time, in some cases, in order to improve the bonding property, the bump shape may be adjusted by heating to about 100 to 300 ° C.

【００１２】しかし、従来のワイヤボンディング方式に
用いられるウェッジツールなどを用いた場合では、操作
が複雑でバンプ形成に時間がかかるという問題があっ
た。例えば、従来ではクランプがワイヤをウェッジツー
ルに送り出す場合は、図１４に一例を示すような複雑な
動きを行っていた。図１４のワイヤ１３を後に動かす場
合では、図１４（ａ）から図１４（ｂ）のようにクラン
プ２１は閉じてワイヤ１３をくわえた状態で後方に動
き、次に図１４（ｃ）のように開いて前方へ動き、次に
図１４（ｄ）のように再び閉じてワイヤ１３をくわえて
後方に動くといった動作をウェッジツール１１に対する
相対位置を保ちながら行っていた。また、ワイヤ１３を
前に動かす場合はこの逆の動作を行う。However, when a wedge tool or the like used in a conventional wire bonding method is used, there is a problem that the operation is complicated and it takes time to form a bump. For example, conventionally, when a clamp feeds a wire to a wedge tool, a complicated movement as shown in FIG. 14 is performed. When the wire 13 in FIG. 14 is moved backward, the clamp 21 closes and moves backward with the wire 13 held as shown in FIG. 14 (a) to FIG. 14 (b), and then as shown in FIG. 14 (c). Then, as shown in FIG. 14 (d), the operation of closing the wire 13 and moving it backward with the wire 13 is performed while maintaining the relative position with respect to the wedge tool 11. When the wire 13 is moved forward, the reverse operation is performed.

【００１３】[0013]

【発明が解決しようとする課題】上述のように、ワイヤ
ボンディングの手法を用いてバンプを形成する場合、ネ
イルヘッドボンディング法では、ボールの溶融形成が必
要なため高温が必要であり、溶融時酸化しやすい材料が
使用できない、バンプ大きさにばらつきが生じ易い、電
極の微細ピッチ化に適していないなどの問題があった。
また、従来のウェッジボンディング法では、クランプと
ウェッジツールとが相対的な位置を保ちながら相互に移
動し、それに合わせてクランプが開閉を行うなど複雑な
動作が必要であった。As described above, when a bump is formed by using a wire bonding technique, the nail head bonding method requires a high temperature because a ball must be melt-formed, so that oxidation during melting is required. There are problems that materials that can be easily used cannot be used, bump sizes tend to vary, and they are not suitable for fine pitching of electrodes.
Further, in the conventional wedge bonding method, a complicated operation is required such that the clamp and the wedge tool move relative to each other while maintaining a relative position, and the clamp opens and closes accordingly.

【００１４】本発明はこれらの問題を解決して、比較的
簡単な方法、比較的単純な装置を用いて、常温で比較的
小さな体積のバンプを形成することができ、かつバンプ
形成のタクト時間を短くして生産性を向上することので
きるバンプ形成装置およびバンプ形成方法の実現を課題
とする。The present invention solves these problems so that a relatively small volume bump can be formed at room temperature using a relatively simple method and a relatively simple apparatus, and the tact time of the bump formation can be reduced. It is an object of the present invention to realize a bump forming apparatus and a bump forming method capable of improving the productivity by shortening the length.

【００１５】[0015]

【課題を解決するための手段】上記目的を達成するた
め、本発明は、金属細線を金属膜または金属板上に押し
付ける押圧面と、この押圧面に超音波振動を励起する超
音波振動励起手段を有し、前記押圧面から前記金属細線
に超音波振動を加えることによって前記金属膜または金
属板と前記金属細線とを接合する接合手段と、この接合
手段に前記金属細線を供給する供給手段とを具備し、前
記接合手段による前記金属膜または金属板と前記金属細
線との接合後に前記金属細線を接合部から分離すること
により金属バンプを形成するバンプ形成装置において、
前記接合手段の一部に前記金属細線の接合部の前記供給
手段側にくびれを作る突起部を設けたことを特徴とす
る。To achieve the above object, the present invention provides a pressing surface for pressing a thin metal wire onto a metal film or a metal plate, and an ultrasonic vibration exciting means for exciting ultrasonic vibration on the pressing surface. A joining means for joining the metal film or metal plate and the metal thin wire by applying ultrasonic vibration to the metal thin wire from the pressing surface, and a supply means for supplying the metal thin wire to the joining means. A bump forming apparatus that forms a metal bump by separating the metal thin line from a bonding portion after bonding the metal film or metal plate and the metal fine line by the bonding unit,
A part of the joining means is provided with a protruding part which forms a constriction on the side of the supply means at the joining part of the thin metal wires.

【００１６】金属細線を金属膜または金属板上に押し付
け、前記金属細線に超音波振動を加えて前記金属膜また
は金属板と前記金属細線とを接合し、この接合後に前記
金属細線を接合部から分離することにより金属バンプを
形成するバンプ形成方法において、前記金属細線を接合
部から分離するに先だって前記金属細線にくびれを形成
し分離を容易にすることを特徴とする。The thin metal wire is pressed onto a metal film or a metal plate, and ultrasonic vibration is applied to the thin metal wire to join the thin metal wire to the metal film or the metal plate. In a bump forming method for forming a metal bump by separating, a narrowing is formed in the thin metal wire to facilitate separation before the thin metal wire is separated from a bonding portion.

【００１７】[0017]

【発明の実施の形態】以下、本発明にかかる金属バンプ
形成装置と金属バンプ形成方法を添付図面を参照にして
詳細に説明する。本発明の第１の実施の形態として従来
のワイヤボンディング用のＡｌ配線用のウェッジボンダ
を用いて、はんだバンプを形成する方法を述べる。ウェ
ッジボンダで第１ボンド地点と第２ボンド地点とを同一
の位置に設定し、Ｓｉチップ上の電極パッドに５０μｍ
径のはんだワイヤを接合する。Ｓｉチップ上の電極パッ
ドは下から１μｍ程度の厚みのＡｌ、０．５μｍ程度の
厚みのＮｉおよびＡｕのフラッシュを重ねたものであ
る。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a metal bump forming apparatus and a metal bump forming method according to the present invention will be described in detail with reference to the accompanying drawings. As a first embodiment of the present invention, a method of forming a solder bump using a conventional wedge bonder for Al wiring for wire bonding will be described. The first bond point and the second bond point are set at the same position with a wedge bonder, and 50 μm is set on the electrode pad on the Si chip.
Join solder wire of diameter. The electrode pads on the Si chip are formed by stacking flashes of Al having a thickness of about 1 μm, Ni and Au having a thickness of about 0.5 μm from below.

【００１８】接合の条件は、第１ボンドで、超音波の周
波数が６０ｋＨｚ〜２００ｋＨｚ、超音波出力が１ｍＷ
〜５０ｍＷ、超音波発振持続時間が１０ｍｓｅｃ〜５０
ｍｓｅｃ、荷重が２０ｇｆ〜５０ｇｆである。また第２
ボンドの際は荷重３０ｇｆを掛けるのみで超音波は印加
しない。最後にリフローを行ってはんだボールを形成す
る。The bonding conditions are as follows: a first bond, an ultrasonic frequency of 60 kHz to 200 kHz, and an ultrasonic output of 1 mW.
~ 50mW, ultrasonic oscillation duration 10msec ~ 50
msec, and the load is 20 gf to 50 gf. Also the second
At the time of bonding, only a load of 30 gf is applied, and no ultrasonic wave is applied. Finally, reflow is performed to form solder balls.

【００１９】この方法では最終的に５０μｍ径のはんだ
ワイヤで約６０μｍ径程度の小はんだボールを形成する
ことができる。また、現在使用可能なはんだワイヤの最
も細い物は３０μｍ径のはんだワイヤであり、これによ
り３５μｍ径程度の小はんだボールを形成することがで
きる。このように比較的太いはんだワイヤを用いて小さ
な径のはんだバンプが形成できるので、それだけ限られ
た面積に電極数を多く設けることができる。この方法で
は、また、接合時に還元ガス等を用いないため、安全性
が高まり、またコストを押さえることができる。According to this method, a small solder ball having a diameter of about 60 μm can be finally formed with a solder wire having a diameter of 50 μm. The thinnest solder wire that can be used at present is a solder wire having a diameter of 30 μm, and thus a small solder ball having a diameter of about 35 μm can be formed. Since a relatively small solder bump can be formed using a relatively thick solder wire in this manner, a large number of electrodes can be provided in a limited area. In this method, since a reducing gas or the like is not used at the time of joining, safety can be improved and cost can be reduced.

【００２０】次に、本発明の第２の実施の形態として金
属バンプ形成装置について説明する。図１に本発明の第
２の実施の形態のウェッジツールの先端部を示した。図
１で１１はウェッジツールの先端部、１２はウェッジツ
ールの圧着面、１３はワイヤ、１４はワイヤ挿入穴、１
５は突起部、１６は電極パッドである。図１に示すよう
にウェッジボンダのウェッジツールの先端１１の圧着面
１２の後方のワイヤ１３の繰出し部の近くに突起部１５
を作り、第１の実施の形態の場合と同様に第１ボンドを
行い、必要あれば同位置に第２ボンドも行ってはんだバ
ンプを形成する。Next, a description will be given of a metal bump forming apparatus according to a second embodiment of the present invention. FIG. 1 shows a tip portion of a wedge tool according to a second embodiment of the present invention. In FIG. 1, 11 is the tip of the wedge tool, 12 is the crimp surface of the wedge tool, 13 is a wire, 14 is a wire insertion hole,
Reference numeral 5 denotes a projection, and 16 denotes an electrode pad. As shown in FIG. 1, a projection 15 is provided near the feeding portion of the wire 13 behind the crimping surface 12 of the tip 11 of the wedge tool of the wedge bonder.
Then, the first bonding is performed in the same manner as in the first embodiment, and the second bonding is also performed at the same position as necessary to form a solder bump.

【００２１】この方法によると、ワイヤの後部が突起部
１５で押し潰されて切断されやすくなるので、クランプ
の後方への移動でワイヤ１３を容易に引きちぎることが
できる。また、クランプを移動させなくても、ウェッジ
ツール自身を圧着状態のまま図の右側に移動させること
でもワイヤの切断が可能になる。According to this method, the rear portion of the wire is easily crushed by the protrusion 15 and is easily cut, so that the wire 13 can be easily torn by moving the clamp backward. In addition, even if the clamp is not moved, the wire can be cut by moving the wedge tool itself to the right side in the figure in a crimped state.

【００２２】この時のウェッジツールとクランプの動作
を図２に示す。まず図２（ａ）から図２（ｂ）のよう
に、ウェッジツール１１は斜め後方に下がりながら、ワ
イヤ１３を電極パッド１６に押し付ける。その後、図２
（ｂ）の状態で超音波が発振されワイヤ１３は接合され
る。クランプ２１は、この時、開いた状態で後方に動
く。The operation of the wedge tool and the clamp at this time is shown in FIG. First, as shown in FIGS. 2A and 2B, the wedge tool 11 presses the wire 13 against the electrode pad 16 while lowering diagonally backward. Then, FIG.
Ultrasonic waves are oscillated in the state of (b), and the wire 13 is joined. At this time, the clamp 21 moves rearward in the open state.

【００２３】超音波発振が終了時には、図２（ｃ）のよ
うに、クランプ２１が閉まり、ウェッジツール１１とク
ランプ２１は同時にワイヤ１３の長さ方向後方に動いて
ワイヤ１３を切断する。もちろん、クランプ２１をさら
に後方に動かしてもいい。ウェッジツール１１とワイヤ
１３との分離が悪い時はさらに超音波を加えると分離し
やすくなることがある。続いて、図２（ｄ）のように、
ウェッジツール１１を上方に動かし、次の接合点に移動
する。クランプ２１は閉じたまま前方に動き、ワイヤ１
３が繰り出され、次のパッド形成に移る。At the end of the ultrasonic oscillation, as shown in FIG. 2C, the clamp 21 is closed, and the wedge tool 11 and the clamp 21 simultaneously move backward in the longitudinal direction of the wire 13 to cut the wire 13. Of course, the clamp 21 may be moved further backward. When the separation between the wedge tool 11 and the wire 13 is poor, the separation may be facilitated by further applying ultrasonic waves. Then, as shown in FIG.
Move the wedge tool 11 upward to move to the next junction. The clamp 21 moves forward while being closed, and the wire 1
3 is paid out, and the process proceeds to the next pad formation.

【００２４】このようにすると、クランプ２１を複雑に
前後へ移動させなくてもワイヤ１３を切断することが可
能で、またワイヤ先端の位置決めも容易になる。したが
って、クランプ２１の前後の動きは、ワイヤ１３を前方
に押し出すためだけの動きとなって、通常のウェッジボ
ンダでの操作よりもシンプルな動きになる。したがっ
て、クランプ２１の開閉と動きが単純なため、タクト時
間の短縮が望める。クランプ２１の開閉には比較的簡単
なソレノイドコイルを用いることも可能である。In this way, the wire 13 can be cut without moving the clamp 21 back and forth complicatedly, and the positioning of the tip of the wire becomes easy. Therefore, the forward and backward movements of the clamp 21 are merely movements for pushing the wire 13 forward, and are simpler movements than the operation with a normal wedge bonder. Therefore, the opening and closing and movement of the clamp 21 are simple, so that the tact time can be reduced. It is also possible to use a relatively simple solenoid coil to open and close the clamp 21.

【００２５】次に、本発明の第３の実施の形態である金
属バンプ形成装置について説明する。図３に、本発明の
第３の実施の形態のウェッジツールの先端部を示す。図
３で１１はウェッジツール、１２はウェッジツールの圧
着面、１３はワイヤ、１４はワイヤ挿入穴、１５は突起
部、１６は電極パッドである。Next, a description will be given of a metal bump forming apparatus according to a third embodiment of the present invention. FIG. 3 shows a tip of a wedge tool according to a third embodiment of the present invention. In FIG. 3, 11 is a wedge tool, 12 is a crimping surface of the wedge tool, 13 is a wire, 14 is a wire insertion hole, 15 is a protrusion, and 16 is an electrode pad.

【００２６】図３、図４はこのウェッジツールの先端部
１１の動作を示す。図３に示すように、ウェッジツール
１１の圧着面１２の先端部分に突起部１５を作り、この
突起部１５の後方の圧着面１２で、はんだワイヤ１３を
接合した後、図４のようにウェッジツール１１を動かし
て接合部とワイヤ１３の間に突起部１５を押し込み、ク
ランプ２１を閉じてからクランプ２１を後方に動かす
と、突起部１５で押さえられたところからワイヤ１３が
切断されて金属バンプが形成される。3 and 4 show the operation of the tip 11 of the wedge tool. As shown in FIG. 3, a projection 15 is formed at the tip of the crimping surface 12 of the wedge tool 11, and the solder wire 13 is joined on the crimping surface 12 behind the projection 15, and as shown in FIG. When the tool 11 is moved to push the protrusion 15 between the joint and the wire 13, the clamp 21 is closed, and then the clamp 21 is moved backward, the wire 13 is cut from the position pressed by the protrusion 15 and the metal bump is cut. Is formed.

【００２７】この時のウェッジツール１１とクランプ２
１の動作を図５に示す。まず図５（ａ）から図５（ｂ）
のように、ウェッジツール１１は斜め後方に下がりなが
ら、ワイヤ１３をパッド１６に押し付ける。その後、図
５（ｂ）の状態で超音波が発振されワイヤ１３はパッド
１６に接合される。クランプ２１は、この時、開いた状
態で後方に動く。At this time, the wedge tool 11 and the clamp 2
1 is shown in FIG. First, from FIG. 5A to FIG.
As described above, the wedge tool 11 presses the wire 13 against the pad 16 while lowering diagonally backward. Thereafter, ultrasonic waves are oscillated in the state of FIG. 5B, and the wire 13 is bonded to the pad 16. At this time, the clamp 21 moves rearward in the open state.

【００２８】超音波発振が終了後、図５（ｃ）のよう
に、クランプ２１を開いたままで、ウェッジツール１１
をその突起部１５が接合部とワイヤ１３の境界にくるよ
うに移動させ、突起部１５でワイヤ１３を押さえた後、
図５（ｄ）のように、クランプ２１を閉じてワイヤ１３
の長さ方向後方に動いてワイヤ１３を切断する。After the end of the ultrasonic oscillation, as shown in FIG.
Is moved so that the projection 15 comes to the boundary between the joining portion and the wire 13, and after the projection 13 presses the wire 13,
As shown in FIG. 5D, the clamp 21 is closed and the wire 13 is closed.
The wire 13 is moved backward in the length direction to cut the wire 13.

【００２９】この方法では、ワイヤ１３を圧着面１２で
押さえながらクランプ２１を動かす必要はなく、クラン
プ２１をウェッジツール１１に対して動かして相対位置
を変えなくてもワイヤ１３の切断ができるため、クラン
プ２１をホーンと一緒に移動させて良く、したがって別
々の駆動装置を設ける必要がなくなって、装置の単純化
が可能であり、処理の高速操作が可能になる。In this method, it is not necessary to move the clamp 21 while holding the wire 13 on the crimping surface 12, and the wire 13 can be cut without moving the clamp 21 with respect to the wedge tool 11 to change the relative position. The clamp 21 can be moved together with the horn, so that there is no need to provide a separate driving device, so that the device can be simplified and the processing can be performed at high speed.

【００３０】以上に述べた金属バンプ形成の方法や金属
バンプ形成装置を用いて、半導体装置チップを基板に接
続する方法を述べる。まず、本発明の第１の実施の形態
にしたがってチップ上のＡｌ−Ｎｉ−Ａｕの電極パッド
にはんだバンプを形成する。つぎにこのはんだバンプに
フラックスをディスペンサ等で供給した後、チップをリ
フロー炉にいれてはんだバンプをとかし半球状のはんだ
バンプを形成する。図６はこのようにして形成された半
球状のはんだバンプの断面構造を示す断面図である。一
方同様に基板上の電極パッドにも、はんだバンプを形成
し、リフロー炉にいれて半球状のはんだバンプにする。
このように、リフロー炉にいれて半球状のはんだバンプ
を形成すると、 １）バンプの表面が活性化し接合しやすくなる。 ２）電極と金属バンプとがより十分に接合する。 ３）半球状化によりバンプの形状をより幅狭く、より高
さを高くすることができ、チップと基板間にブリッジが
生じにくくなり、チップと基板間の間隔をより広く取
れ、作業性が向上するなどのメリットがある。A method for connecting a semiconductor device chip to a substrate using the above-described metal bump forming method and metal bump forming apparatus will be described. First, solder bumps are formed on Al-Ni-Au electrode pads on a chip according to the first embodiment of the present invention. Next, after a flux is supplied to the solder bumps with a dispenser or the like, the chip is placed in a reflow furnace and the solder bumps are melted to form hemispherical solder bumps. FIG. 6 is a sectional view showing the sectional structure of the hemispherical solder bump formed in this manner. On the other hand, solder bumps are similarly formed on the electrode pads on the substrate, and are placed in a reflow furnace to form hemispherical solder bumps.
As described above, when hemispherical solder bumps are formed in a reflow furnace, 1) the surface of the bumps is activated and bonding is facilitated. 2) The electrodes and metal bumps are more fully bonded. 3) Due to the hemispherical shape, the shape of the bump can be made narrower and higher, the bridge between the chip and the substrate is less likely to occur, the space between the chip and the substrate can be made wider, and the workability is improved. There are advantages such as doing.

【００３１】次に、チップ上のはんだバンプと基板上の
はんだバンプにフラックスを供給した後、位置合わせを
行って突き合わせ、リフロー炉にいれてはんだバンプを
溶かして一度に接続する。チップ、基板を単体でリフロ
ー炉にいれることをやめて、突き合わせてリフロー炉に
いれるだけでもいい。これにより比較的狭い範囲に多数
の接点を設けることができ、チップから基板上に多数の
Ｉ／Ｏを入出力することが可能になる。Next, after supplying flux to the solder bumps on the chip and the solder bumps on the substrate, they are aligned and abutted, and then put into a reflow furnace to melt the solder bumps and connect them all at once. Instead of putting chips and substrates alone into a reflow oven, you can just put them into a reflow oven. Thus, a large number of contacts can be provided in a relatively narrow range, and a large number of I / Os can be input / output from the chip onto the substrate.

【００３２】図７、図８および図９は、本発明の第２ま
たは第３の実施の形態が用いられる金属バンプ形成装置
の一実施例の構成要素の各部を示す略図である。図７
は、クランプ支持部で、２１はクランプ、２２はクラン
プ支点、２３はクランプの開閉を行うソレノイドコイ
ル、２４はクランプを前後に動かすための第１のサーボ
モータ、２５は第１のアームである。FIGS. 7, 8 and 9 are schematic diagrams showing components of an embodiment of a metal bump forming apparatus using the second or third embodiment of the present invention. FIG.
Is a clamp support, 21 is a clamp, 22 is a clamp fulcrum, 23 is a solenoid coil for opening and closing the clamp, 24 is a first servomotor for moving the clamp back and forth, and 25 is a first arm.

【００３３】図８は、ウェッジツール支持部で、１１は
ウェッジツール、１７は超音波をウェッジツール１１に
伝える円筒形のホーン、１８は超音波発振器との連結コ
イルである。FIG. 8 shows a wedge tool support, 11 denotes a wedge tool, 17 denotes a cylindrical horn for transmitting ultrasonic waves to the wedge tool 11, and 18 denotes a connection coil to an ultrasonic oscillator.

【００３４】図９は、ウェッジツール駆動部であり、図
９（ａ）はその側面図、図９（ｂ）はそのクランプ支点
側からみた正面図である。３１はクランプ支点、３２は
第２のアーム、３３はホーン支持部、３４はホーン１７
とそれにともなってウェッジツール１１を上下させるた
めの第２のサーボモータ、３５をホーン１７を嵌入する
ための嵌入穴である。9A and 9B show a wedge tool driving unit, and FIG. 9A is a side view thereof, and FIG. 9B is a front view thereof as viewed from a clamp fulcrum side. 31 is a clamp fulcrum, 32 is a second arm, 33 is a horn support, 34 is a horn 17
And a second servomotor 35 for moving the wedge tool 11 up and down, and a fitting hole for fitting the horn 17 into the second servomotor 35.

【００３５】これら各部を組上げて、図１０に示すよう
に金属バンプ形成装置は合成される。本発明の金属バン
プ形成装置ではクランプの前後の動きが比較的小さいの
で、図１０に示すように装置は従来のものに比べて構成
が単純であり、それだけ廉価に構成することができる。By assembling these components, a metal bump forming apparatus is synthesized as shown in FIG. In the metal bump forming apparatus of the present invention, since the movement before and after the clamp is relatively small, as shown in FIG. 10, the apparatus has a simpler configuration than the conventional apparatus and can be configured at a lower cost.

【００３６】図１１に、クランプ２１とソレノイドコイ
ル２３との一構成例を示す。図１１ではクランプ２１は
通常、スプリング２７によって押し広げられている。ソ
レノイドコイル２３に通電されると、クランプ２１はス
プリング２７に抗して閉じてワイヤを保持する構成であ
る。従来の方法に比してクランプの開閉を繰り返す頻度
が比較的少ないため、クランプの開閉構造はこのような
簡単な構成でも十分である。FIG. 11 shows a configuration example of the clamp 21 and the solenoid coil 23. In FIG. 11, the clamp 21 is normally expanded by a spring 27. When the solenoid coil 23 is energized, the clamp 21 closes against the spring 27 to hold the wire. Since the frequency of repeating opening and closing of the clamp is relatively low as compared with the conventional method, such a simple structure for opening and closing the clamp is sufficient.

【００３７】以上の説明では、使用するワイヤをはんだ
ワイヤとして説明したが、５００°Ｃ以下の温度で溶融
するようなＰｂ−Ｓｎ合金、Ａｇ−Ｓｎ合金、Ａｇ、Ｓ
ｎ、Ｚｎ、Ｉｎの合金、Ｐｂ−Ｓｎ＋αの合金を同様に
用いることができる。これらの金属素材のワイヤを用い
た場合、リフロー炉にいれて半球状のバンプを形成する
ことが可能である。また、リフロー炉にいれて半球状の
バンプに形成することはできないが、Ａｇ、Ａｌ、Ａ
ｕ、Ｃｕ、Ｐｂ、Ｐｄ、Ｓｎおよびこれらの合金からな
る金属ワイヤをも同様に用いることができる。また以上
の説明でワイヤを使用するように説明したが連続した金
属板、金属箔を同様に用いることも可能である。これに
より、半導体素子の電極とインナーリードの接続の場合
など、種々の目的、用途に本発明のバンプ形成の方法を
用いることができる。In the above description, the wire to be used has been described as a solder wire, but a Pb-Sn alloy, an Ag-Sn alloy, an Ag, S
An alloy of n, Zn, and In and an alloy of Pb-Sn + α can be used in the same manner. When these metal wires are used, it is possible to form a hemispherical bump in a reflow furnace. Also, although it cannot be formed into a hemispherical bump in a reflow furnace, Ag, Al, A
Metal wires made of u, Cu, Pb, Pd, Sn and their alloys can be used in the same manner. In the above description, wires are used. However, continuous metal plates and metal foils can be used in the same manner. Thus, the method of forming a bump according to the present invention can be used for various purposes and applications, such as when connecting an electrode of a semiconductor element to an inner lead.

【００３８】[0038]

【発明の効果】以上説明したように本発明の請求項１の
発明は、超音波ウェッジボンディング法を用いたバンプ
形成装置で、ウェッジツールの一部にワイヤまたは第１
の金属板の接合部のワイヤまたは金属板供給側にくびれ
を作る突起を設けるようにした。これを用いて、ワイヤ
または第１の金属板にくびれを作ると切断位置が安定
し、比較的簡単な方法で容易に比較的小さな体積のバン
プを形成することができ、かつバンプ形成のタクト時間
を短くして生産性を向上することができる。As described above, according to the first aspect of the present invention, there is provided a bump forming apparatus using an ultrasonic wedge bonding method, wherein a wire or a first wire is partially provided on a wedge tool.
A projection for forming a constriction is provided on the wire or metal plate supply side of the joint portion of the metal plate. When a constriction is formed in the wire or the first metal plate using this, the cutting position is stable, a relatively small volume bump can be easily formed by a relatively simple method, and the tact time of the bump formation is reduced. Can be shortened and productivity can be improved.

【００３９】本発明の請求項２および請求項３の発明
は、この突起をウェッジツールの押圧面の前後に設ける
ようにした。これにより、比較的単純で小さな動きによ
ってワイヤまたは第１の金属板にくびれを作ることがで
き、バンプ形成のタクト時間を短くして生産性を向上す
ることができる。According to the second and third aspects of the present invention, the projections are provided before and after the pressing surface of the wedge tool. Thereby, a constriction can be formed in the wire or the first metal plate by a relatively simple and small movement, and the tact time for bump formation can be shortened to improve productivity.

【００４０】本発明の請求項４および請求項６の発明
は、超音波ウェッジボンディング法を用いたバンプ形成
装置で、５００°以下で溶融する金属または合金を素材
としたワイヤまたは第１の金属板を用いるようにし、請
求項７の発明ではこのような金属バンプを形成後に高温
炉内で加熱溶融してバンプ形状を半球状もしくは球状に
するようにした。これにより、このバンプ形成の方法を
半導体素子のワイヤまたは金属板レスボンディングに利
用することができる。さらに、加工が容易で、リフロー
炉で暖めることによりバンプ形状を半球または球状に形
成することができ、バンプ幅をより狭く、バンプ高さを
より高くすることができ、作業性を向上することができ
る。According to a fourth aspect of the present invention, there is provided a bump forming apparatus using an ultrasonic wedge bonding method, wherein a wire or a first metal plate made of a metal or an alloy which melts at a temperature of 500 ° or less is used. In the invention of claim 7, after forming such a metal bump, it is heated and melted in a high-temperature furnace so that the bump shape becomes hemispherical or spherical. Thereby, this bump forming method can be used for bonding of wires or metal plates of a semiconductor element. Furthermore, the processing is easy, the bump shape can be formed into a hemisphere or a sphere by heating in a reflow furnace, the bump width can be narrower, the bump height can be higher, and the workability can be improved. it can.

【００４１】また、本発明の請求項５の発明は、超音波
ウェッジボンディング法を用いたバンプ形成装置で、ワ
イヤまたは第１の金属板にくびれを形成し分離を容易に
するようにした。したがって、比較的簡単な方法で容易
に比較的小さな体積のバンプを形成することができ、か
つバンプ形成のタクト時間を短くして生産性を向上する
ことができる。According to a fifth aspect of the present invention, in a bump forming apparatus using an ultrasonic wedge bonding method, constriction is formed on a wire or a first metal plate to facilitate separation. Therefore, a relatively small volume bump can be easily formed by a relatively simple method, and the tact time for bump formation can be shortened to improve productivity.

【００４２】本発明の請求項６の発明は、ワイヤまたは
金属板の素材をＡｇ、Ａｌ、Ａｕ、Ｃｕ、Ｐｂ、Ｐｄ、
Ｓｎおよびこれらの合金とした。これにより、種々の目
的用途にこのバンプ形成の方法を用いることができる。According to the invention of claim 6 of the present invention, the material of the wire or the metal plate is made of Ag, Al, Au, Cu, Pb, Pd,
Sn and their alloys were used. Thus, the bump forming method can be used for various purposes.

【図面の簡単な説明】[Brief description of the drawings]

【図１】本発明の一実施の形態のウェッジツールの先端
部を示す側面図。FIG. 1 is a side view showing a tip portion of a wedge tool according to an embodiment of the present invention.

【図２】図１の実施の形態のウェッジツールとクランプ
の動作を示す説明図。FIG. 2 is an explanatory view showing the operation of a wedge tool and a clamp according to the embodiment of FIG. 1;

【図３】本発明の他の実施の形態のウェッジツールの先
端部を示す側面図。FIG. 3 is a side view showing a distal end portion of a wedge tool according to another embodiment of the present invention.

【図４】図３に示す実施の形態のウェッジツールの先端
部の動きを示す説明図。FIG. 4 is an explanatory view showing the movement of the tip of the wedge tool according to the embodiment shown in FIG. 3;

【図５】図３に示す実施の形態のウェッジツールとクラ
ンプの動作を示す説明図。FIG. 5 is an explanatory view showing the operation of the wedge tool and the clamp according to the embodiment shown in FIG. 3;

【図６】本発明の実施の形態によって作られる半球状の
はんだバンプの断面構造を示す断面図。FIG. 6 is a sectional view showing a sectional structure of a hemispherical solder bump formed according to the embodiment of the present invention.

【図７】本発明の実施の形態が用いられる金属バンプ形
成装置のクランプ支持部を示す略図。FIG. 7 is a schematic view showing a clamp support portion of a metal bump forming apparatus according to an embodiment of the present invention.

【図８】本発明の実施の形態が用いられる金属バンプ形
成装置のウェッジツール支持部を示す略図。FIG. 8 is a schematic view showing a wedge tool support of a metal bump forming apparatus according to an embodiment of the present invention.

【図９】本発明の実施の形態が用いられる金属バンプ形
成装置のウェッジツール駆動部を示す略図。FIG. 9 is a schematic diagram showing a wedge tool driving unit of the metal bump forming apparatus in which the embodiment of the present invention is used.

【図１０】本発明の実施の形態が用いられる金属バンプ
形成装置の構成図。FIG. 10 is a configuration diagram of a metal bump forming apparatus to which the embodiment of the present invention is applied.

【図１１】本発明の実施の形態が用いられる金属バンプ
形成装置のクランプとソレノイドコイルとの構成図。FIG. 11 is a configuration diagram of a clamp and a solenoid coil of a metal bump forming apparatus according to an embodiment of the present invention.

【図１２】ウェッジボンディング法によりバンプ形成を
行う従来の方法を示す説明図。FIG. 12 is an explanatory view showing a conventional method for forming a bump by a wedge bonding method.

【図１３】従来のウェッジツールの先端部とワイヤの変
形の様子を示す説明図。FIG. 13 is an explanatory view showing a state of deformation of a distal end portion of a conventional wedge tool and a wire.

【図１４】従来の方法でクランプがワイヤをウェッジツ
ールに送り出す場合の動作を示す説明図。FIG. 14 is an explanatory view showing an operation when a clamp sends out a wire to a wedge tool by a conventional method.

【符号の説明】[Explanation of symbols]

１１…ウェッジツール、１２…ウェッジツールの圧着
面、１３…ワイヤ、１４…ワイヤ挿入穴、１５…突起
部、１６…電極パッド、１７…ホーン、１８…連結コイ
ル、２１…クランプ、２２…クランプ支点、２３…ソレ
ノイドコイル、２４…第１のサーボモータ、２５…第１
のアーム、３１…クランプ支点、３２…第２のアーム、
３３…ホーン支持部、３４…第２のサーボモータ、３５
…嵌入穴。11: wedge tool, 12: crimp surface of wedge tool, 13: wire, 14: wire insertion hole, 15: projection, 16: electrode pad, 17: horn, 18: connection coil, 21: clamp, 22: clamp fulcrum , 23 ... solenoid coil, 24 ... first servomotor, 25 ... first
Arm, 31 ... clamp fulcrum, 32 ... second arm,
33: Horn support part, 34: Second servo motor, 35
… A fitting hole.

フロントページの続き (51)Int.Cl.6 識別記号 ＦＩ Ｈ０１Ｌ 21/92 ６０４Ｚ Continued on the front page (51) Int.Cl. 6 Identification code FI H01L 21/92 604Z

Claims (8)

【特許請求の範囲】[Claims] 【請求項１】 金属細線または第１の金属板を金属膜ま
たは第２の金属板上に押し付ける押圧面と、この押圧面
に超音波振動を励起する超音波振動励起手段を有し、前
記押圧面から前記金属細線または第１の金属板に超音波
振動を加えることによって前記金属膜または第２の金属
板と前記金属細線または第１の金属板とを接合する接合
手段と、この接合手段に前記金属細線または第１の金属
板を供給する供給手段とを具備し、 前記接合手段による前記金属膜または第２の金属板と前
記金属細線または第１の金属板との接合後に前記金属細
線または第１の金属板を接合部から分離することにより
金属バンプを形成するバンプ形成装置において、 前記接合手段の一部に前記金属細線または第１の金属板
の接合部の前記供給手段側にくびれを作る突起部を設け
たことを特徴とするバンプ形成装置。1. A pressing surface for pressing a thin metal wire or a first metal plate onto a metal film or a second metal plate, and an ultrasonic vibration excitation means for exciting ultrasonic vibration on the pressing surface, Bonding means for bonding the metal film or the second metal plate to the metal thin wire or the first metal plate by applying ultrasonic vibration to the metal thin wire or the first metal plate from a surface; Supply means for supplying the thin metal wire or the first metal plate, and after joining the metal film or the second metal plate and the thin metal wire or the first metal plate by the joining means, In a bump forming apparatus for forming a metal bump by separating a first metal plate from a joining portion, a part of the joining device may be formed by constricting the thin metal wire or the joining portion of the first metal plate on the supply unit side. Pier Part bump forming apparatus, wherein a is provided. 【請求項２】 前記突起部は前記押圧面の前記供給手段
側に設けられていることを特徴とする請求項１に記載の
バンプ形成装置。2. The bump forming apparatus according to claim 1, wherein the protrusion is provided on the pressing surface on the side of the supply unit. 【請求項３】 前記突起部は前記押圧面の前記供給手段
の反対側の先端に設けられていることを特徴とする請求
項１に記載のバンプ形成装置。3. The bump forming apparatus according to claim 1, wherein the protrusion is provided at an end of the pressing surface opposite to the supply unit. 【請求項４】 金属細線または第１の金属板を金属膜ま
たは第２の金属板上に押し付け、前記金属細線または第
１の金属板に超音波振動を加えて前記金属膜または第２
の金属板と前記金属細線または第１の金属板とを接合
し、この接合後に前記金属細線または第１の金属板を接
合部から分離することにより金属バンプを形成するバン
プ形成方法において、 前記金属細線または第１の金属板が５００°以下で溶融
する金属または合金を素材として形成されたものである
ことを特徴とするバンプ形成方法。4. A thin metal wire or a first metal plate is pressed onto a metal film or a second metal plate, and ultrasonic vibration is applied to the thin metal wire or the first metal plate to apply the metal film or the second metal plate.
A metal plate and the metal thin wire or the first metal plate are joined together, and after this joining, the metal thin wire or the first metal plate is separated from a joining portion to form a metal bump. A method of forming a bump, wherein the thin wire or the first metal plate is formed using a metal or an alloy that melts at 500 ° or less as a raw material. 【請求項５】 金属細線または第１の金属板を金属膜ま
たは第２の金属板上に押し付け、前記金属細線または第
１の金属板に超音波振動を加えて前記金属膜または第２
の金属板と前記金属細線または第１の金属板とを接合
し、この接合後に前記金属細線または第１の金属板を接
合部から分離することにより金属バンプを形成するバン
プ形成方法において、 前記金属細線または第１の金属板を接合部から分離する
に先だって前記金属細線または第１の金属板にくびれを
形成し分離を容易にすることを特徴とするバンプ形成方
法。5. A thin metal wire or a first metal plate is pressed onto a metal film or a second metal plate, and ultrasonic vibration is applied to the thin metal wire or the first metal plate to form the metal film or the second metal plate.
A metal plate and the metal thin wire or the first metal plate are joined together, and after this joining, the metal thin wire or the first metal plate is separated from a joining portion to form a metal bump. A method for forming a bump, comprising: forming a constriction on a thin metal wire or a first metal plate to separate the thin metal wire or the first metal plate before separating the thin metal wire or the first metal plate from a joint portion. 【請求項６】 前記金属細線または第１の金属板の素材
が５００°以下で溶融する金属または合金であることを
特徴とする請求項５に記載のバンプ形成方法。6. The bump forming method according to claim 5, wherein the material of the thin metal wire or the first metal plate is a metal or an alloy that melts at 500 ° or less. 【請求項７】 金属バンプを形成後に高温炉内で加熱溶
融してバンプ形状を半球状もしくは球状にすることを特
徴とする請求項４または請求項６に記載のバンプ形成方
法。7. The bump forming method according to claim 4, wherein after the metal bump is formed, the bump is made into a hemispherical or spherical shape by heating and melting in a high-temperature furnace. 【請求項８】 前記金属細線の素材がＡｇ、Ａｌ、Ａ
ｕ、Ｃｕ、Ｐｂ、Ｐｄ、Ｓｎおよびこれらの合金である
ことを特徴とする請求項５に記載のバンプ形成方法。8. The material of said thin metal wire is Ag, Al, A
The bump forming method according to claim 5, wherein the bump is made of u, Cu, Pb, Pd, Sn, or an alloy thereof.
JP9232010A 1997-08-28 1997-08-28 Bump-forming device and method Pending JPH1174299A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9232010A JPH1174299A (en) 1997-08-28 1997-08-28 Bump-forming device and method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9232010A JPH1174299A (en) 1997-08-28 1997-08-28 Bump-forming device and method

Publications (1)

Publication Number Publication Date
JPH1174299A true JPH1174299A (en) 1999-03-16

Family

ID=16932544

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9232010A Pending JPH1174299A (en) 1997-08-28 1997-08-28 Bump-forming device and method

Country Status (1)

Country Link
JP (1) JPH1174299A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053130A (en) * 2005-08-15 2007-03-01 Matsushita Electric Ind Co Ltd Connection structure and connection method
WO2011090049A1 (en) * 2010-01-25 2011-07-28 日本航空電子工業株式会社 Flip-chip mounting structure and flip-chip mounting method
WO2013067270A1 (en) * 2011-11-04 2013-05-10 Invensas Corporation Bonding wedge

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007053130A (en) * 2005-08-15 2007-03-01 Matsushita Electric Ind Co Ltd Connection structure and connection method
US8012869B2 (en) 2005-08-15 2011-09-06 Panasonic Corporation Bonded structure and bonding method
WO2011090049A1 (en) * 2010-01-25 2011-07-28 日本航空電子工業株式会社 Flip-chip mounting structure and flip-chip mounting method
JP2011151322A (en) * 2010-01-25 2011-08-04 Japan Aviation Electronics Industry Ltd Flip-chip mounting structure and flip-chip mounting method
WO2013067270A1 (en) * 2011-11-04 2013-05-10 Invensas Corporation Bonding wedge

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