JPH11176727A - 投影露光装置 - Google Patents
投影露光装置Info
- Publication number
- JPH11176727A JPH11176727A JP9341445A JP34144597A JPH11176727A JP H11176727 A JPH11176727 A JP H11176727A JP 9341445 A JP9341445 A JP 9341445A JP 34144597 A JP34144597 A JP 34144597A JP H11176727 A JPH11176727 A JP H11176727A
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- liquid
- optical system
- projection
- ultrasonic
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Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70216—Mask projection systems
- G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Length Measuring Devices Characterised By Use Of Acoustic Means (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
(57)【要約】
【課題】 露光光を実質的に短波長化し、また、露光が
液体中で行われる場合であっても、基板表面の投影光学
系の光軸方向の位置を高精度に検出する。 【解決手段】 ウエハＷに最も近い投影光学系のレンズ
４とウエハＷとの間を満たすように側壁８内に液体７を
供給する。超音波射出系５から超音波を射出し、超音波
集束位置ＳＳにおいて反射した超音波を超音波受信系６
により受信する。超音波受信系６からの検出信号に基づ
いて、超音波の集束位置ＳＳにおけるベストフォーカス
位置からのデフォーカス量を求める。求められたデフォ
ーカス量に基づいて試料台９をＺ方向に駆動し、フォー
カス位置の制御を行う。
液体中で行われる場合であっても、基板表面の投影光学
系の光軸方向の位置を高精度に検出する。 【解決手段】 ウエハＷに最も近い投影光学系のレンズ
４とウエハＷとの間を満たすように側壁８内に液体７を
供給する。超音波射出系５から超音波を射出し、超音波
集束位置ＳＳにおいて反射した超音波を超音波受信系６
により受信する。超音波受信系６からの検出信号に基づ
いて、超音波の集束位置ＳＳにおけるベストフォーカス
位置からのデフォーカス量を求める。求められたデフォ
ーカス量に基づいて試料台９をＺ方向に駆動し、フォー
カス位置の制御を行う。
Description
【０００１】
【発明の属する技術分野】本発明は、例えば、半導体素
子、液晶表示素子、又は薄膜磁気ヘッド等を製造するた
めのリソグラフィ工程に用いられる投影露光装置に関す
る。
子、液晶表示素子、又は薄膜磁気ヘッド等を製造するた
めのリソグラフィ工程に用いられる投影露光装置に関す
る。
【０００２】
【従来の技術】半導体素子等を製造する際に、フォトマ
スクとしてのレチクルのパターンの像を投影光学系を介
して、基板としてのレジストが塗布されたウエハ（又は
ガラスプレート等）上の各ショット領域に転写するステ
ッパー型、又はステップ・アンド・スキャン方式等の投
影露光装置が使用されている。
スクとしてのレチクルのパターンの像を投影光学系を介
して、基板としてのレジストが塗布されたウエハ（又は
ガラスプレート等）上の各ショット領域に転写するステ
ッパー型、又はステップ・アンド・スキャン方式等の投
影露光装置が使用されている。
【０００３】投影露光装置に備えられている投影光学系
の解像度は、使用する露光波長が短く、投影光学系の開
口数が大きいほど高くなる。そのため、集積回路の微細
化に伴い投影露光装置で使用される露光波長は年々短波
長化しており、投影光学系の開口数も増大してきてい
る。そして、現在主流の露光波長は、ＫｒＦエキシマレ
ーザの２４８ｎｍであるが、更に短波長のＡｒＦエキシ
マレーザの１９３ｎｍの使用も検討されている。
の解像度は、使用する露光波長が短く、投影光学系の開
口数が大きいほど高くなる。そのため、集積回路の微細
化に伴い投影露光装置で使用される露光波長は年々短波
長化しており、投影光学系の開口数も増大してきてい
る。そして、現在主流の露光波長は、ＫｒＦエキシマレ
ーザの２４８ｎｍであるが、更に短波長のＡｒＦエキシ
マレーザの１９３ｎｍの使用も検討されている。
【０００４】また、露光を行う際には、解像度と同様に
焦点深度も重要となる。解像度Ｒ、及び焦点深度δはそ
れぞれ以下の式で表される。 Ｒ＝ｋ1 ・λ／ＮＡ （１） δ＝ｋ2 ・λ／ＮＡ2 （２） ここで、λは露光波長、ＮＡは投影光学系の開口数、ｋ
1 ，ｋ2 はプロセス係数である。同じ解像度を得る場合
には短い波長の露光光を用いた方が大きな焦点深度を得
ることができる。しかしながら、投影光学系に使用され
る透過性の光学部材（硝材）の分光透過特性を考慮する
と、現時点ではＡｒＦエキシマレーザの１９３ｎｍより
短い波長の露光光を透過できると共に、比較的大きなレ
ンズを形成できる均一な硝材はほとんどない。
焦点深度も重要となる。解像度Ｒ、及び焦点深度δはそ
れぞれ以下の式で表される。 Ｒ＝ｋ1 ・λ／ＮＡ （１） δ＝ｋ2 ・λ／ＮＡ2 （２） ここで、λは露光波長、ＮＡは投影光学系の開口数、ｋ
1 ，ｋ2 はプロセス係数である。同じ解像度を得る場合
には短い波長の露光光を用いた方が大きな焦点深度を得
ることができる。しかしながら、投影光学系に使用され
る透過性の光学部材（硝材）の分光透過特性を考慮する
と、現時点ではＡｒＦエキシマレーザの１９３ｎｍより
短い波長の露光光を透過できると共に、比較的大きなレ
ンズを形成できる均一な硝材はほとんどない。
【０００５】
【発明が解決しようとする課題】上記の如く従来の投影
露光装置（投影光学系）では、ＡｒＦエキシマレーザの
１９３ｎｍより短い波長の露光光を使用することは困難
である。そこで、実質的に露光波長を短くする方法とし
て、液浸法が提案されている。これは、ウエハを所定の
液体中に浸し、液体中での露光光の波長が、空気中の１
／ｎ倍（ｎは液体の屈折率で通常１．２〜１．６程度）
になることを利用して解像度を向上し、焦点深度を増大
するというものである。
露光装置（投影光学系）では、ＡｒＦエキシマレーザの
１９３ｎｍより短い波長の露光光を使用することは困難
である。そこで、実質的に露光波長を短くする方法とし
て、液浸法が提案されている。これは、ウエハを所定の
液体中に浸し、液体中での露光光の波長が、空気中の１
／ｎ倍（ｎは液体の屈折率で通常１．２〜１．６程度）
になることを利用して解像度を向上し、焦点深度を増大
するというものである。
【０００６】ところで、露光時には、露光範囲全体が投
影光学系の焦点深度の範囲内に入る必要があるため、投
影露光装置には、合焦機構（オートフォーカス機構）が
設けられている。これは、一般に露光すべきウエハの表
面に斜入射で光ビームを入射し、その反射光を対面の光
学系で受光してウエハ表面の合焦状態を検出し、ウエハ
を上下に移動して合焦位置へ追い込むというものであ
る。
影光学系の焦点深度の範囲内に入る必要があるため、投
影露光装置には、合焦機構（オートフォーカス機構）が
設けられている。これは、一般に露光すべきウエハの表
面に斜入射で光ビームを入射し、その反射光を対面の光
学系で受光してウエハ表面の合焦状態を検出し、ウエハ
を上下に移動して合焦位置へ追い込むというものであ
る。
【０００７】露光されるウエハ表面には感光膜（フォト
レジスト）が塗布されており、このフォトレジストにパ
ターンが転写される。そこで、このフォトレジスト表面
を投影光学系の焦点位置に一致させることが望ましく、
フォトレジスト表面の位置をを検出する必要がある。従
来の投影露光装置では、ウエハが配置される空間は空
気、又は窒素等の気体で満たされている。そして、例え
ば空気の屈折率は１であり、ウエハ表面に塗布されたフ
ォトレジストの屈折率は、約１．７である。従って、空
気−フォトレジスト界面における光の反射率は、フレネ
ルの式より以下のように計算される。 反射率＝｛（１−１．７）／（１＋１．７）｝2 ×１００ ＝６．７（％） （３） 空気−フォトレジスト界面では、合焦検出用の光束の比
較的多くが反射し、フォトレジスト表面の位置を検出す
ることができる。
レジスト）が塗布されており、このフォトレジストにパ
ターンが転写される。そこで、このフォトレジスト表面
を投影光学系の焦点位置に一致させることが望ましく、
フォトレジスト表面の位置をを検出する必要がある。従
来の投影露光装置では、ウエハが配置される空間は空
気、又は窒素等の気体で満たされている。そして、例え
ば空気の屈折率は１であり、ウエハ表面に塗布されたフ
ォトレジストの屈折率は、約１．７である。従って、空
気−フォトレジスト界面における光の反射率は、フレネ
ルの式より以下のように計算される。 反射率＝｛（１−１．７）／（１＋１．７）｝2 ×１００ ＝６．７（％） （３） 空気−フォトレジスト界面では、合焦検出用の光束の比
較的多くが反射し、フォトレジスト表面の位置を検出す
ることができる。
【０００８】しかし、液浸法を採用した投影露光装置の
場合には、ウエハが配置される空間は液体で満たされる
ことになる。例えば液体が水である場合、その屈折率は
１．３であり、水−フォトレジスト界面における光の反
射率は、フレネルの式より以下のように計算される。 反射率＝｛（１．３−１．７）／（１．３＋１．７）｝2 ×１００ ＝１．８（％） （４） 水−フォトレジスト界面では、空気−フォトレジスト界
面に比べ空間とフォトレジストとの屈折率の差が著しく
小さくなるため、合焦検出用の光束の反射率が低下し、
フォトレジスト表面の位置を正確に検出することが困難
となる。
場合には、ウエハが配置される空間は液体で満たされる
ことになる。例えば液体が水である場合、その屈折率は
１．３であり、水−フォトレジスト界面における光の反
射率は、フレネルの式より以下のように計算される。 反射率＝｛（１．３−１．７）／（１．３＋１．７）｝2 ×１００ ＝１．８（％） （４） 水−フォトレジスト界面では、空気−フォトレジスト界
面に比べ空間とフォトレジストとの屈折率の差が著しく
小さくなるため、合焦検出用の光束の反射率が低下し、
フォトレジスト表面の位置を正確に検出することが困難
となる。
【０００９】本発明は斯かる点に鑑み、露光光の波長を
短波長化し、より微細なパターンを転写できる投影露光
装置を提供することを目的とする。さらに、液体中で感
光材料が塗布された基板上に露光が行われる場合であっ
ても、その感光材料の表面の投影光学系の光軸方向の位
置を高精度に検出することができる投影露光装置を提供
することをも目的とする。
短波長化し、より微細なパターンを転写できる投影露光
装置を提供することを目的とする。さらに、液体中で感
光材料が塗布された基板上に露光が行われる場合であっ
ても、その感光材料の表面の投影光学系の光軸方向の位
置を高精度に検出することができる投影露光装置を提供
することをも目的とする。
【００１０】
【課題を解決するための手段】本発明の投影露光装置
は、マスク（Ｒ）のパターン像を投影光学系（ＰＬ）を
介して基板（Ｗ）上に転写する投影露光装置において、
その基板（Ｗ）の表面に所定の液体（７）を供給する液
浸装置（２，８）と、その基板（Ｗ）の表面に液体
（７）を介して超音波を送出し、その表面で反射される
超音波を検出することによってその表面のその投影光学
系（ＰＬ）の光軸方向の位置を検出する超音波方式の面
位置検出装置（５，６）とを備えたものである。
は、マスク（Ｒ）のパターン像を投影光学系（ＰＬ）を
介して基板（Ｗ）上に転写する投影露光装置において、
その基板（Ｗ）の表面に所定の液体（７）を供給する液
浸装置（２，８）と、その基板（Ｗ）の表面に液体
（７）を介して超音波を送出し、その表面で反射される
超音波を検出することによってその表面のその投影光学
系（ＰＬ）の光軸方向の位置を検出する超音波方式の面
位置検出装置（５，６）とを備えたものである。
【００１１】斯かる本発明の投影露光装置によれば、マ
スク（Ｒ）のパターン像を液体（７）を介して基板
（Ｗ）の表面に露光するため、基板表面における露光光
の波長を空気中における波長の１／ｎ倍（ｎは液体
（７）の屈折率）に短波長化できる。また、超音波方式
の面位置検出装置（５，６）により基板（Ｗ）の表面の
光軸方向の位置を高精度に検出するため、光学式の面位
置検出装置では面位置の検出が困難な液体（７）中にお
いても、その位置を高精度に検出することができる。
スク（Ｒ）のパターン像を液体（７）を介して基板
（Ｗ）の表面に露光するため、基板表面における露光光
の波長を空気中における波長の１／ｎ倍（ｎは液体
（７）の屈折率）に短波長化できる。また、超音波方式
の面位置検出装置（５，６）により基板（Ｗ）の表面の
光軸方向の位置を高精度に検出するため、光学式の面位
置検出装置では面位置の検出が困難な液体（７）中にお
いても、その位置を高精度に検出することができる。
【００１２】また、基板（Ｗ）の表面に感光材料（Ｐ
Ｒ）が塗布されている際に、面位置検出装置（５，６）
は、その感光材料（ＰＲ）の表面の投影光学系（３，
４）の光軸方向の位置を検出することが望ましい。この
場合、投影光学系（３，４）の像面をその感光材料（Ｐ
Ｒ）の表面に合わせ込むことができる。また、投影光学
系（ＰＬ）の基板（Ｗ）側の光学素子（４）の先端部と
その基板（Ｗ）の表面との間を満たすように液体（７）
が供給されることが望ましい。この場合、基板（Ｗ）表
面における露光光の波長を、空気中における露光光の波
長の１／ｎ倍（ｎは液体（７）の屈折率）に短波長化で
きる。さらに、投影光学系（ＰＬ）の鏡筒（３）が液体
（７）に接触しないため、鏡筒（３）が腐食しにくくな
るという利点がある。
Ｒ）が塗布されている際に、面位置検出装置（５，６）
は、その感光材料（ＰＲ）の表面の投影光学系（３，
４）の光軸方向の位置を検出することが望ましい。この
場合、投影光学系（３，４）の像面をその感光材料（Ｐ
Ｒ）の表面に合わせ込むことができる。また、投影光学
系（ＰＬ）の基板（Ｗ）側の光学素子（４）の先端部と
その基板（Ｗ）の表面との間を満たすように液体（７）
が供給されることが望ましい。この場合、基板（Ｗ）表
面における露光光の波長を、空気中における露光光の波
長の１／ｎ倍（ｎは液体（７）の屈折率）に短波長化で
きる。さらに、投影光学系（ＰＬ）の鏡筒（３）が液体
（７）に接触しないため、鏡筒（３）が腐食しにくくな
るという利点がある。
【００１３】また、その液体（７）は、水（屈折率１．
３）、又は有機溶媒（例えばアルコール（エタノール
（屈折率１．３６）等）、セダー油（屈折率１．５２）
等）である。この場合に液体（７）として水を用いる場
合には、その入手が容易であるという利点がある。ま
た、液体（７）として有機溶媒を用いる場合には、投影
光学系（ＰＬ）の鏡筒（３）が腐食しにくくなるという
利点がある。さらに、液体（７）としてセダー油を用い
る場合には、その屈折率が約１．５と大きく、露光光を
より短波長化することができる。
３）、又は有機溶媒（例えばアルコール（エタノール
（屈折率１．３６）等）、セダー油（屈折率１．５２）
等）である。この場合に液体（７）として水を用いる場
合には、その入手が容易であるという利点がある。ま
た、液体（７）として有機溶媒を用いる場合には、投影
光学系（ＰＬ）の鏡筒（３）が腐食しにくくなるという
利点がある。さらに、液体（７）としてセダー油を用い
る場合には、その屈折率が約１．５と大きく、露光光を
より短波長化することができる。
【００１４】また、基板（Ｗ）を保持してこの基板
（Ｗ）を投影光学系（ＰＬ）の光軸に垂直な平面上で位
置決めする基板ステージ（１０）と、面位置検出装置
（５，６）の検出結果に基づいてその基板（Ｗ）の投影
光学系の光軸方向（３，４）の位置を制御する高さ制御
ステージ（９）とを備えることが望ましい。この場合、
投影光学系（３，４）の像面に対して基板（Ｗ）の表面
を高精度に合わせ込むことができる。
（Ｗ）を投影光学系（ＰＬ）の光軸に垂直な平面上で位
置決めする基板ステージ（１０）と、面位置検出装置
（５，６）の検出結果に基づいてその基板（Ｗ）の投影
光学系の光軸方向（３，４）の位置を制御する高さ制御
ステージ（９）とを備えることが望ましい。この場合、
投影光学系（３，４）の像面に対して基板（Ｗ）の表面
を高精度に合わせ込むことができる。
【００１５】
【発明の実施の形態】以下、本発明の実施の形態の一例
につき図１〜図３を参照して説明する。図１（ａ）は本
例の投影露光装置の概略構成を示し、この図１（ａ）に
おいて、露光光源としてのＡｒＦエキシマレーザ光源、
オプティカル・インテグレータ、視野絞り、コンデンサ
レンズ等を含む照明光学系１から射出された波長１９３
ｎｍの紫外パルス光よりなる露光光ＩＬは、レチクルＲ
に設けられたパターンを照明する。レチクルＲのパター
ンは、両側（又はウエハ側に片側）テレセントリックな
投影光学系ＰＬを介して所定の投影倍率β（βは例えば
１／４，１／５等）でフォトレジストＰＲが塗布された
ウエハＷ上の露光領域に縮小投影される。なお、露光光
ＩＬとしては、ＫｒＦエキシマレーザ光（波長２４８ｎ
ｍ）、Ｆ2エキシマレーザ光（波長１５７ｎｍ）や水銀
ランプのｉ線（波長３６５ｎｍ）等を使用してもよい。
以下、投影光学系ＰＬの光軸ＡＸに平行にＺ軸を取り、
Ｚ軸に垂直な平面内で図１（ａ）の紙面に垂直な方向に
沿ってＹ軸を取り、紙面に平行な方向に沿ってＸ軸を取
って説明する。
につき図１〜図３を参照して説明する。図１（ａ）は本
例の投影露光装置の概略構成を示し、この図１（ａ）に
おいて、露光光源としてのＡｒＦエキシマレーザ光源、
オプティカル・インテグレータ、視野絞り、コンデンサ
レンズ等を含む照明光学系１から射出された波長１９３
ｎｍの紫外パルス光よりなる露光光ＩＬは、レチクルＲ
に設けられたパターンを照明する。レチクルＲのパター
ンは、両側（又はウエハ側に片側）テレセントリックな
投影光学系ＰＬを介して所定の投影倍率β（βは例えば
１／４，１／５等）でフォトレジストＰＲが塗布された
ウエハＷ上の露光領域に縮小投影される。なお、露光光
ＩＬとしては、ＫｒＦエキシマレーザ光（波長２４８ｎ
ｍ）、Ｆ2エキシマレーザ光（波長１５７ｎｍ）や水銀
ランプのｉ線（波長３６５ｎｍ）等を使用してもよい。
以下、投影光学系ＰＬの光軸ＡＸに平行にＺ軸を取り、
Ｚ軸に垂直な平面内で図１（ａ）の紙面に垂直な方向に
沿ってＹ軸を取り、紙面に平行な方向に沿ってＸ軸を取
って説明する。
【００１６】レチクルＲはレチクルステージＲＳＴ上に
保持され、レチクルステージＲＳＴにはＸ方向、Ｙ方
向、回転方向に微動できる機構が組み込まれている。レ
チクルステージＲＳＴの２次元的な位置、及び回転角は
レーザ干渉計（不図示）によってリアルタイムに計測さ
れている。一方、ウエハＷはウエハホルダ（不図示）を
介して試料台９上に保持され、試料台９はウエハＷのフ
ォーカス位置（Ｚ方向の位置）及び傾斜角を制御するＺ
ステージ１０上に固定されている。試料台９上には円筒
状の側壁８が設けられおり、その内部は液体７で満たさ
れている。液体７は、ポンプ等からなる液体供給回収系
２により、ノズル２ａを介して露光前に側壁８内に供給
され、露光後に回収される。なお、本例の投影露光装置
では液体７として水（屈折率１．３）を使用しており、
光の波長は水中において空気中の１／１．３倍になるた
め、ＡｒＦエキシマレーザ（波長１９３ｎｍ）よりなる
露光光の波長は実質的に約１４８ｎｍに短波長化され
る。
保持され、レチクルステージＲＳＴにはＸ方向、Ｙ方
向、回転方向に微動できる機構が組み込まれている。レ
チクルステージＲＳＴの２次元的な位置、及び回転角は
レーザ干渉計（不図示）によってリアルタイムに計測さ
れている。一方、ウエハＷはウエハホルダ（不図示）を
介して試料台９上に保持され、試料台９はウエハＷのフ
ォーカス位置（Ｚ方向の位置）及び傾斜角を制御するＺ
ステージ１０上に固定されている。試料台９上には円筒
状の側壁８が設けられおり、その内部は液体７で満たさ
れている。液体７は、ポンプ等からなる液体供給回収系
２により、ノズル２ａを介して露光前に側壁８内に供給
され、露光後に回収される。なお、本例の投影露光装置
では液体７として水（屈折率１．３）を使用しており、
光の波長は水中において空気中の１／１．３倍になるた
め、ＡｒＦエキシマレーザ（波長１９３ｎｍ）よりなる
露光光の波長は実質的に約１４８ｎｍに短波長化され
る。
【００１７】また、投影光学系ＰＬの鏡筒３は金属製で
あり、液体７による腐食を防止するため、本例では、投
影光学系ＰＬと液体７との接触部分は、ウエハＷに最も
近いレンズ４のみとしている。また、投影光学系ＰＬの
鏡筒３の側面には、超音波射出系５と超音波受信系６と
よりなる焦点位置検出系（以下「ＡＦセンサ５，６」と
呼ぶ）が取り付けられている。
あり、液体７による腐食を防止するため、本例では、投
影光学系ＰＬと液体７との接触部分は、ウエハＷに最も
近いレンズ４のみとしている。また、投影光学系ＰＬの
鏡筒３の側面には、超音波射出系５と超音波受信系６と
よりなる焦点位置検出系（以下「ＡＦセンサ５，６」と
呼ぶ）が取り付けられている。
【００１８】図１（ｂ）は図１（ａ）の側壁８近傍の拡
大図であり、この図１（ｂ）において、側壁８にはウエ
ハＷの試料台９上への搬送、又は試料台９からの搬出の
際に使用する開閉自在の扉８ａが設けられている。ま
た、液体供給回収系２のノズル２ａは、液体の供給、及
び回収の際に上下に駆動することができる構成となって
いる。
大図であり、この図１（ｂ）において、側壁８にはウエ
ハＷの試料台９上への搬送、又は試料台９からの搬出の
際に使用する開閉自在の扉８ａが設けられている。ま
た、液体供給回収系２のノズル２ａは、液体の供給、及
び回収の際に上下に駆動することができる構成となって
いる。
【００１９】図１（ａ）に戻り、Ｚステージ１０は投影
光学系ＰＬの像面と平行なＸＹ平面に沿って移動するＸ
Ｙステージ１１上に固定され、ＸＹステージ１１は不図
示のベース上に載置されている。Ｚステージ１０は、ウ
エハＷのフォーカス位置（Ｚ方向の位置）、及び傾斜角
を制御してウエハＷ上のフォトレジストＰＲ表面をオー
トフォーカス方式、及びオートレベリング方式で投影光
学系ＰＬの像面に合わせ込み、ＸＹステージ１１はウエ
ハＷのＸ方向、及びＹ方向の位置合わせを行う。試料台
９（ウエハＷ）の２次元的な位置、及び回転角は、移動
鏡１２の位置としてレーザ干渉計１３によってリアルタ
イムに計測されている。この計測結果に基づいて主制御
系１４からウエハステージ駆動系１５に制御情報が送ら
れ、Ｚステージ１０、ＸＹステージ１１の動作が制御さ
れ、露光時にはウエハＷ上の各ショット領域が順次露光
位置に移動し、レチクルＲのパターンが各ショット領域
へ露光転写される。
光学系ＰＬの像面と平行なＸＹ平面に沿って移動するＸ
Ｙステージ１１上に固定され、ＸＹステージ１１は不図
示のベース上に載置されている。Ｚステージ１０は、ウ
エハＷのフォーカス位置（Ｚ方向の位置）、及び傾斜角
を制御してウエハＷ上のフォトレジストＰＲ表面をオー
トフォーカス方式、及びオートレベリング方式で投影光
学系ＰＬの像面に合わせ込み、ＸＹステージ１１はウエ
ハＷのＸ方向、及びＹ方向の位置合わせを行う。試料台
９（ウエハＷ）の２次元的な位置、及び回転角は、移動
鏡１２の位置としてレーザ干渉計１３によってリアルタ
イムに計測されている。この計測結果に基づいて主制御
系１４からウエハステージ駆動系１５に制御情報が送ら
れ、Ｚステージ１０、ＸＹステージ１１の動作が制御さ
れ、露光時にはウエハＷ上の各ショット領域が順次露光
位置に移動し、レチクルＲのパターンが各ショット領域
へ露光転写される。
【００２０】次に、本例の投影露光装置のＡＦセンサ
５，６について説明する。図２（ａ）は、本例の投影光
学系の下部近傍を拡大して示し、この図２（ａ）におい
て、超音波射出系５には超音波発生素子５ａ、及び超音
波集束素子５ｂが設けられている。圧電素子等からなる
超音波発生素子５ａから射出された周波数５０ＭＨｚ〜
２００ＭＨｚ程度の超音波は、超音波集束素子５ｂによ
りウエハＷに塗布されたフォトレジストＰＲ表面上の集
束位置ＳＳに集束され、集束位置ＳＳで反射して超音波
受信系６に入射する。超音波受信系６には超音波受信素
子６ａ、超音波集束素子６ｂ、及び振動できる遮音板６
ｃが設けられており、超音波受信系６に入射した超音波
は超音波集束素子６ｂにより集束され、遮音板６ｃの開
口を介して超音波受信素子６ａに入射する。超音波受信
素子６ａの検出信号は主制御系１４に供給される。な
お、遮音板６ｃの中央部には超音波を通過させる開口が
設けられて、主制御系１４が遮音板駆動機構６ｄにより
遮音板６ｃを横シフト（又は振動）させて超音波受信素
子６ａの検出信号が最大になる位置を検出する。又は、
遮音板６ｃを振動させるのに同期した信号で超音波受信
素子６ａの検出信号を同期検波してもよい。
５，６について説明する。図２（ａ）は、本例の投影光
学系の下部近傍を拡大して示し、この図２（ａ）におい
て、超音波射出系５には超音波発生素子５ａ、及び超音
波集束素子５ｂが設けられている。圧電素子等からなる
超音波発生素子５ａから射出された周波数５０ＭＨｚ〜
２００ＭＨｚ程度の超音波は、超音波集束素子５ｂによ
りウエハＷに塗布されたフォトレジストＰＲ表面上の集
束位置ＳＳに集束され、集束位置ＳＳで反射して超音波
受信系６に入射する。超音波受信系６には超音波受信素
子６ａ、超音波集束素子６ｂ、及び振動できる遮音板６
ｃが設けられており、超音波受信系６に入射した超音波
は超音波集束素子６ｂにより集束され、遮音板６ｃの開
口を介して超音波受信素子６ａに入射する。超音波受信
素子６ａの検出信号は主制御系１４に供給される。な
お、遮音板６ｃの中央部には超音波を通過させる開口が
設けられて、主制御系１４が遮音板駆動機構６ｄにより
遮音板６ｃを横シフト（又は振動）させて超音波受信素
子６ａの検出信号が最大になる位置を検出する。又は、
遮音板６ｃを振動させるのに同期した信号で超音波受信
素子６ａの検出信号を同期検波してもよい。
【００２１】図２（ｂ）は、フォトレジストＰＲ表面上
の超音波の集束位置ＳＳ付近を拡大して示し、この図２
（ｂ）において、ウエハＷ上には感光用のフォトレジス
トＰＲが塗布されている。従来の光学式で斜入射方式の
ＡＦセンサによりフォトレジストＰＲ表面上の位置ＳＳ
を検出しようとしても、液体７とフォトレジストＰＲの
屈折率が同程度で反射率が極めて低くなり、光は経路１
７に沿ってウエハＷの表面まで進むため、検出される位
置ＳＳ’はフォトレジストＰＲの表面上に位置せず、投
影光学系ＰＬの像面にはウエハＷの基板自体の表面が合
わせ込まれる。本例のＡＦセンサ５，６の超音波は経路
１６に沿って進みフォトレジストＰＲの表面で反射され
るため、フォトレジストＰＲ表面上の位置ＳＳが正確に
検出され、高精度にフォトレジストＰＲ表面を像面に合
焦させることができる。
の超音波の集束位置ＳＳ付近を拡大して示し、この図２
（ｂ）において、ウエハＷ上には感光用のフォトレジス
トＰＲが塗布されている。従来の光学式で斜入射方式の
ＡＦセンサによりフォトレジストＰＲ表面上の位置ＳＳ
を検出しようとしても、液体７とフォトレジストＰＲの
屈折率が同程度で反射率が極めて低くなり、光は経路１
７に沿ってウエハＷの表面まで進むため、検出される位
置ＳＳ’はフォトレジストＰＲの表面上に位置せず、投
影光学系ＰＬの像面にはウエハＷの基板自体の表面が合
わせ込まれる。本例のＡＦセンサ５，６の超音波は経路
１６に沿って進みフォトレジストＰＲの表面で反射され
るため、フォトレジストＰＲ表面上の位置ＳＳが正確に
検出され、高精度にフォトレジストＰＲ表面を像面に合
焦させることができる。
【００２２】また、フォトレジストＰＲ表面のＺ方向の
位置は、従来の光学式で斜入射方式のＡＦセンサと同様
の原理によって超音波受信素子６ａ上での超音波の集束
位置の横シフト量から検出される。即ち、ウエハＷが図
２（ｂ）中の下方（−Ｚ方向）にずれれば図２（ａ）の
超音波受信素子６ａ上での集束位置が上方にずれ、ウエ
ハＷが図２（ｂ）中の上方にずれれば超音波受信素子６
ａ上での集束位置は下方にずれるため、この横シフト量
よりフォトレジストＰＲの表面のフォーカス位置の変化
量を求めることができる。そのため、予めベストフォー
カス位置はテストプリント等によって定めておき、その
ときに遮音板６ｃの開口の中心（又は振動中心）と超音
波の集束位置の中心とを合わせておけばよい。
位置は、従来の光学式で斜入射方式のＡＦセンサと同様
の原理によって超音波受信素子６ａ上での超音波の集束
位置の横シフト量から検出される。即ち、ウエハＷが図
２（ｂ）中の下方（−Ｚ方向）にずれれば図２（ａ）の
超音波受信素子６ａ上での集束位置が上方にずれ、ウエ
ハＷが図２（ｂ）中の上方にずれれば超音波受信素子６
ａ上での集束位置は下方にずれるため、この横シフト量
よりフォトレジストＰＲの表面のフォーカス位置の変化
量を求めることができる。そのため、予めベストフォー
カス位置はテストプリント等によって定めておき、その
ときに遮音板６ｃの開口の中心（又は振動中心）と超音
波の集束位置の中心とを合わせておけばよい。
【００２３】図３は、一例として超音波受信系６からの
検出信号を同期検波して得られるフォーカス信号Ｄとフ
ォトレジストＰＲ表面のフォーカス位置Ｚとの関係を示
す。主制御系１４内で、超音波受信装置６ａからの検出
信号を、遮音板６ｃの駆動信号で同期整流することによ
って、フォトレジストＰＲ表面での超音波の集束位置Ｓ
Ｓに対応して、フォーカス位置Ｚに所定範囲でほぼ比例
して変化するフォーカス信号Ｄが生成される。本例で
は、超音波の集束位置ＳＳに対応するフォーカス信号Ｄ
は、集束位置ＳＳが投影光学系ＰＬの像面（ベストフォ
ーカス位置）に合致しているときに０になるようにキャ
リブレーションが行われており、主制御系１４は、フォ
ーカス信号Ｄよりデフォーカス量（ずれ量）を求めるこ
とができる。ウエハＷのフォーカス位置が上方にある場
合には、Ｚステージ１０（ウエハＷ）を下方に移動し、
逆にフォーカス位置が下方にある場合には、Ｚステージ
１０（ウエハＷ）を上方に移動して露光を行うことにな
る。
検出信号を同期検波して得られるフォーカス信号Ｄとフ
ォトレジストＰＲ表面のフォーカス位置Ｚとの関係を示
す。主制御系１４内で、超音波受信装置６ａからの検出
信号を、遮音板６ｃの駆動信号で同期整流することによ
って、フォトレジストＰＲ表面での超音波の集束位置Ｓ
Ｓに対応して、フォーカス位置Ｚに所定範囲でほぼ比例
して変化するフォーカス信号Ｄが生成される。本例で
は、超音波の集束位置ＳＳに対応するフォーカス信号Ｄ
は、集束位置ＳＳが投影光学系ＰＬの像面（ベストフォ
ーカス位置）に合致しているときに０になるようにキャ
リブレーションが行われており、主制御系１４は、フォ
ーカス信号Ｄよりデフォーカス量（ずれ量）を求めるこ
とができる。ウエハＷのフォーカス位置が上方にある場
合には、Ｚステージ１０（ウエハＷ）を下方に移動し、
逆にフォーカス位置が下方にある場合には、Ｚステージ
１０（ウエハＷ）を上方に移動して露光を行うことにな
る。
【００２４】なお、本例では液体７として水（屈折率
１．３）を使用したが、液体７として有機溶媒（例えば
アルコール、セダー油等）を用いることもできる。この
場合には、投影光学系ＰＬの鏡筒３が腐食しにくくなる
という利点がある。また、セダー油（屈折率１．５）を
用いる場合には、その屈折率が１．５と大きく、露光光
を実質的により短波長化することができる。
１．３）を使用したが、液体７として有機溶媒（例えば
アルコール、セダー油等）を用いることもできる。この
場合には、投影光学系ＰＬの鏡筒３が腐食しにくくなる
という利点がある。また、セダー油（屈折率１．５）を
用いる場合には、その屈折率が１．５と大きく、露光光
を実質的により短波長化することができる。
【００２５】なお、フォーカス位置の検出については、
超音波射出系５に複数の開口を有する遮音板を配置し、
フォトレジスト表面の複数点での各フォーカス位置を検
出するようにしてもよく、あるいは、大きな開口を有す
る遮音板を超音波射出系５内に配置し、且つ複数の開口
を有する遮音板を超音波受信系６内に配置して、同様に
複数点での各フォーカス位置を検出するようにしてもよ
い。
超音波射出系５に複数の開口を有する遮音板を配置し、
フォトレジスト表面の複数点での各フォーカス位置を検
出するようにしてもよく、あるいは、大きな開口を有す
る遮音板を超音波射出系５内に配置し、且つ複数の開口
を有する遮音板を超音波受信系６内に配置して、同様に
複数点での各フォーカス位置を検出するようにしてもよ
い。
【００２６】なお、上記の実施の形態では、超音波を用
いてウエハのフォトレジスト表面のフォーカス位置を検
出したが、超音波を用いてフォトレジスト表面の傾斜角
を検出するレベリングセンサを用いてもよい。このレベ
リングセンサでは、ウエハの表面にほぼ平行に進む超音
波を照射して、反射される超音波の集音位置を検出すれ
ばよい。
いてウエハのフォトレジスト表面のフォーカス位置を検
出したが、超音波を用いてフォトレジスト表面の傾斜角
を検出するレベリングセンサを用いてもよい。このレベ
リングセンサでは、ウエハの表面にほぼ平行に進む超音
波を照射して、反射される超音波の集音位置を検出すれ
ばよい。
【００２７】なお、本発明は上述の実施の形態に限定さ
れず、本発明の要旨を逸脱しない範囲で種々の構成を取
り得ることは勿論である。
れず、本発明の要旨を逸脱しない範囲で種々の構成を取
り得ることは勿論である。
【００２８】
【発明の効果】本発明の投影露光装置によれば、マスク
のパターン像を液体を介して基板の表面に露光するた
め、基板表面における露光光の波長を実質的に空気中に
おける波長の液体の屈折率の逆数倍に短波長化できる。
また、超音波方式の面位置検出装置により基板表面の光
軸方向の位置を検出するため、光学式の面位置検出装置
では面位置の検出が困難な液体中においても、その位置
を高精度に検出することができる。
のパターン像を液体を介して基板の表面に露光するた
め、基板表面における露光光の波長を実質的に空気中に
おける波長の液体の屈折率の逆数倍に短波長化できる。
また、超音波方式の面位置検出装置により基板表面の光
軸方向の位置を検出するため、光学式の面位置検出装置
では面位置の検出が困難な液体中においても、その位置
を高精度に検出することができる。
【００２９】また、面位置検出装置が、感光材料の表面
の投影光学系の光軸方向の位置を検出する場合には、そ
の検出情報に基づいて投影光学系の像面に対してその感
光材料の表面を高精度に合わせ込むことができる。ま
た、投影光学系の基板側の光学素子の先端部とその基板
の表面との間を満たすように液体が供給される場合に
は、露光光を空気中の１／ｎ倍（ｎは液体の屈折率）に
短波長化できる、また、投影光学系の鏡筒が液体に接触
しないため、投影光学系の鏡筒が腐食しにくくなるとい
う利点がある。
の投影光学系の光軸方向の位置を検出する場合には、そ
の検出情報に基づいて投影光学系の像面に対してその感
光材料の表面を高精度に合わせ込むことができる。ま
た、投影光学系の基板側の光学素子の先端部とその基板
の表面との間を満たすように液体が供給される場合に
は、露光光を空気中の１／ｎ倍（ｎは液体の屈折率）に
短波長化できる、また、投影光学系の鏡筒が液体に接触
しないため、投影光学系の鏡筒が腐食しにくくなるとい
う利点がある。
【００３０】また、液体が、水である場合には、その入
手が容易であるという利点がある。液体が、有機溶媒
（例えばアルコール、セダー油等）である場合には、投
影光学系の鏡筒が腐食しにくいという利点がある。さら
に、液体としてセダー油を用いる場合には、その屈折率
が１．５と水（屈折率１．３）等に比べて大きく、露光
光をより短波長化することができる。
手が容易であるという利点がある。液体が、有機溶媒
（例えばアルコール、セダー油等）である場合には、投
影光学系の鏡筒が腐食しにくいという利点がある。さら
に、液体としてセダー油を用いる場合には、その屈折率
が１．５と水（屈折率１．３）等に比べて大きく、露光
光をより短波長化することができる。
【００３１】また、基板を保持してこの基板を投影光学
系の光軸に垂直な平面上で位置決めする基板ステージ
と、面位置検出装置の検出結果に基づいてその基板の投
影光学系の光軸方向の位置を制御する高さ制御ステージ
とを備える場合には、投影光学系の像面を基板表面上の
露光位置に合わせ込むことができる。
系の光軸に垂直な平面上で位置決めする基板ステージ
と、面位置検出装置の検出結果に基づいてその基板の投
影光学系の光軸方向の位置を制御する高さ制御ステージ
とを備える場合には、投影光学系の像面を基板表面上の
露光位置に合わせ込むことができる。
【図１】（ａ）は本発明の実施の形態の一例の投影露光
装置を示す概略構成図、（ｂ）は図１（ａ）の側壁８近
傍を示す拡大図である。
装置を示す概略構成図、（ｂ）は図１（ａ）の側壁８近
傍を示す拡大図である。
【図２】（ａ）は図１（ａ）の投影露光装置下部の構成
を示す部分拡大図、（ｂ）は図２（ａ）のＢ部の拡大図
である。
を示す部分拡大図、（ｂ）は図２（ａ）のＢ部の拡大図
である。
【図３】ウエハＷ上のフォトレジスト表面のフォーカス
位置Ｚとフォーカス信号Ｄとの関係を示す図である。
位置Ｚとフォーカス信号Ｄとの関係を示す図である。
Ｗ ウエハ Ｒ レチクル ＰＬ 投影光学系 １ 照明光学系 ２ 液体供給回収系 ３ 鏡筒 ４ レンズ ５ 超音波射出系 ６ 超音波受信系 ７ 液体 ８ 側壁 ９ 試料台 １０ Ｚステージ １４ 主制御系 １５ ウエハステージ駆動系
Claims (5)
- 【請求項１】 マスクパターンを投影光学系を介して基
板上に転写する投影露光装置において、 前記基板の表面に所定の液体を供給する液浸装置と、 前記基板の表面に前記液体を介して超音波を送出し、前
記表面で反射される超音波を検出することによって前記
表面の前記投影光学系の光軸方向の位置を検出する超音
波方式の面位置検出装置と、 を備えたことを特徴とする投影露光装置。 - 【請求項２】 前記基板の表面に感光材料が塗布されて
いる際に、 前記面位置検出装置は、前記感光材料の表面の前記投影
光学系の光軸方向の位置を検出することを特徴とする請
求項１記載の投影露光装置。 - 【請求項３】 前記投影光学系の前記基板側の光学素子
の先端部と前記基板の表面との間を満たすように前記液
体が供給されることを特徴とする請求項１、又は２記載
の投影露光装置。 - 【請求項４】 前記液体は、水、又は有機溶媒であるこ
とを特徴とする請求項１、２、又は３記載の投影露光装
置。 - 【請求項５】 前記基板を保持して該基板を前記投影光
学系の光軸に垂直な平面上で位置決めする基板ステージ
と、 前記面位置検出装置の検出結果に基づいて前記基板の前
記投影光学系の光軸方向の位置を制御する高さ制御ステ
ージと、を備えたことを特徴とする請求項１〜４の何れ
か一項記載の投影露光装置。
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|---|---|---|---|
| JP9341445A JPH11176727A (ja) | 1997-12-11 | 1997-12-11 | 投影露光装置 |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9341445A JPH11176727A (ja) | 1997-12-11 | 1997-12-11 | 投影露光装置 |
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| Publication Number | Publication Date |
|---|---|
| JPH11176727A true JPH11176727A (ja) | 1999-07-02 |
Family
ID=18346144
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|---|---|---|---|
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