JPH11130858A - Polyimide, its precursor, their production and photosensitive resin composition - Google Patents
Polyimide, its precursor, their production and photosensitive resin compositionInfo
- Publication number
- JPH11130858A JPH11130858A JP9300601A JP30060197A JPH11130858A JP H11130858 A JPH11130858 A JP H11130858A JP 9300601 A JP9300601 A JP 9300601A JP 30060197 A JP30060197 A JP 30060197A JP H11130858 A JPH11130858 A JP H11130858A
- Authority
- JP
- Japan
- Prior art keywords
- polyimide precursor
- group
- organic group
- polyimide
- aromatic ring
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001721 polyimide Polymers 0.000 title claims abstract description 105
- 239000004642 Polyimide Substances 0.000 title claims abstract description 100
- 239000002243 precursor Substances 0.000 title claims abstract description 81
- 239000011342 resin composition Substances 0.000 title claims description 27
- 238000004519 manufacturing process Methods 0.000 title claims description 23
- 125000003118 aryl group Chemical group 0.000 claims abstract description 35
- 125000000962 organic group Chemical group 0.000 claims abstract description 34
- 150000004985 diamines Chemical class 0.000 claims abstract description 22
- 150000001875 compounds Chemical class 0.000 claims abstract description 8
- 238000006798 ring closing metathesis reaction Methods 0.000 claims abstract description 6
- 229910052736 halogen Inorganic materials 0.000 claims abstract description 5
- 150000002367 halogens Chemical class 0.000 claims abstract description 5
- 238000000034 method Methods 0.000 claims description 24
- YEJRWHAVMIAJKC-UHFFFAOYSA-N 4-Butyrolactone Chemical group O=C1CCCO1 YEJRWHAVMIAJKC-UHFFFAOYSA-N 0.000 claims description 22
- 125000004432 carbon atom Chemical group C* 0.000 claims description 18
- JWYUFVNJZUSCSM-UHFFFAOYSA-N 2-aminobenzimidazole Chemical compound C1=CC=C2NC(N)=NC2=C1 JWYUFVNJZUSCSM-UHFFFAOYSA-N 0.000 claims description 12
- 125000000217 alkyl group Chemical group 0.000 claims description 11
- 150000001412 amines Chemical class 0.000 claims description 11
- 238000006243 chemical reaction Methods 0.000 claims description 9
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 7
- 239000002798 polar solvent Substances 0.000 claims description 7
- 239000003795 chemical substances by application Substances 0.000 claims description 6
- 125000000449 nitro group Chemical group [O-][N+](*)=O 0.000 claims description 4
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 claims description 3
- 125000006158 tetracarboxylic acid group Chemical group 0.000 claims description 3
- 125000005462 imide group Chemical group 0.000 claims 1
- -1 tetracarboxylic acid dianhydride Chemical class 0.000 abstract description 27
- 230000001588 bifunctional effect Effects 0.000 abstract 2
- 239000000758 substrate Substances 0.000 description 21
- 238000010438 heat treatment Methods 0.000 description 17
- 239000000243 solution Substances 0.000 description 16
- ATUOYWHBWRKTHZ-UHFFFAOYSA-N Propane Chemical compound CCC ATUOYWHBWRKTHZ-UHFFFAOYSA-N 0.000 description 14
- 238000010521 absorption reaction Methods 0.000 description 12
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 description 9
- 229910000679 solder Inorganic materials 0.000 description 9
- 238000000576 coating method Methods 0.000 description 8
- 150000002430 hydrocarbons Chemical group 0.000 description 8
- 238000003860 storage Methods 0.000 description 8
- 206010034972 Photosensitivity reaction Diseases 0.000 description 7
- 238000000862 absorption spectrum Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 230000036211 photosensitivity Effects 0.000 description 7
- 239000001294 propane Substances 0.000 description 7
- 239000002904 solvent Substances 0.000 description 7
- 239000007864 aqueous solution Substances 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000011156 evaluation Methods 0.000 description 6
- 239000003112 inhibitor Substances 0.000 description 6
- 238000010526 radical polymerization reaction Methods 0.000 description 6
- 150000000000 tetracarboxylic acids Chemical class 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 125000003368 amide group Chemical group 0.000 description 5
- 239000002585 base Substances 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 5
- 238000003786 synthesis reaction Methods 0.000 description 5
- KHYXYOGWAIYVBD-UHFFFAOYSA-N 4-(4-propylphenoxy)aniline Chemical compound C1=CC(CCC)=CC=C1OC1=CC=C(N)C=C1 KHYXYOGWAIYVBD-UHFFFAOYSA-N 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- KEQFTVQCIQJIQW-UHFFFAOYSA-N N-Phenyl-2-naphthylamine Chemical compound C=1C=C2C=CC=CC2=CC=1NC1=CC=CC=C1 KEQFTVQCIQJIQW-UHFFFAOYSA-N 0.000 description 4
- 101100084040 Neurospora crassa (strain ATCC 24698 / 74-OR23-1A / CBS 708.71 / DSM 1257 / FGSC 987) ppi-1 gene Proteins 0.000 description 4
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- MNWFXJYAOYHMED-UHFFFAOYSA-N heptanoic acid Chemical compound CCCCCCC(O)=O MNWFXJYAOYHMED-UHFFFAOYSA-N 0.000 description 4
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 4
- 150000003949 imides Chemical group 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000000178 monomer Substances 0.000 description 4
- 239000003960 organic solvent Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 3
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 229910052799 carbon Inorganic materials 0.000 description 3
- 238000001035 drying Methods 0.000 description 3
- 238000005227 gel permeation chromatography Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000003504 photosensitizing agent Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- MYRTYDVEIRVNKP-UHFFFAOYSA-N 1,2-Divinylbenzene Chemical compound C=CC1=CC=CC=C1C=C MYRTYDVEIRVNKP-UHFFFAOYSA-N 0.000 description 2
- VZXPHDGHQXLXJC-UHFFFAOYSA-N 1,6-diisocyanato-5,6-dimethylheptane Chemical compound O=C=NC(C)(C)C(C)CCCCN=C=O VZXPHDGHQXLXJC-UHFFFAOYSA-N 0.000 description 2
- WJFKNYWRSNBZNX-UHFFFAOYSA-N 10H-phenothiazine Chemical compound C1=CC=C2NC3=CC=CC=C3SC2=C1 WJFKNYWRSNBZNX-UHFFFAOYSA-N 0.000 description 2
- LEJBBGNFPAFPKQ-UHFFFAOYSA-N 2-(2-prop-2-enoyloxyethoxy)ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOC(=O)C=C LEJBBGNFPAFPKQ-UHFFFAOYSA-N 0.000 description 2
- XFCMNSHQOZQILR-UHFFFAOYSA-N 2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOC(=O)C(C)=C XFCMNSHQOZQILR-UHFFFAOYSA-N 0.000 description 2
- INQDDHNZXOAFFD-UHFFFAOYSA-N 2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOC(=O)C=C INQDDHNZXOAFFD-UHFFFAOYSA-N 0.000 description 2
- HCLJOFJIQIJXHS-UHFFFAOYSA-N 2-[2-[2-(2-prop-2-enoyloxyethoxy)ethoxy]ethoxy]ethyl prop-2-enoate Chemical compound C=CC(=O)OCCOCCOCCOCCOC(=O)C=C HCLJOFJIQIJXHS-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- VVBLNCFGVYUYGU-UHFFFAOYSA-N 4,4'-Bis(dimethylamino)benzophenone Chemical compound C1=CC(N(C)C)=CC=C1C(=O)C1=CC=C(N(C)C)C=C1 VVBLNCFGVYUYGU-UHFFFAOYSA-N 0.000 description 2
- VQVIHDPBMFABCQ-UHFFFAOYSA-N 5-(1,3-dioxo-2-benzofuran-5-carbonyl)-2-benzofuran-1,3-dione Chemical compound C1=C2C(=O)OC(=O)C2=CC(C(C=2C=C3C(=O)OC(=O)C3=CC=2)=O)=C1 VQVIHDPBMFABCQ-UHFFFAOYSA-N 0.000 description 2
- YYVYAPXYZVYDHN-UHFFFAOYSA-N 9,10-phenanthroquinone Chemical compound C1=CC=C2C(=O)C(=O)C3=CC=CC=C3C2=C1 YYVYAPXYZVYDHN-UHFFFAOYSA-N 0.000 description 2
- KWOLFJPFCHCOCG-UHFFFAOYSA-N Acetophenone Chemical compound CC(=O)C1=CC=CC=C1 KWOLFJPFCHCOCG-UHFFFAOYSA-N 0.000 description 2
- SOGAXMICEFXMKE-UHFFFAOYSA-N Butylmethacrylate Chemical compound CCCCOC(=O)C(C)=C SOGAXMICEFXMKE-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229920000298 Cellophane Polymers 0.000 description 2
- 239000009261 D 400 Substances 0.000 description 2
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 2
- GUUVPOWQJOLRAS-UHFFFAOYSA-N Diphenyl disulfide Chemical compound C=1C=CC=CC=1SSC1=CC=CC=C1 GUUVPOWQJOLRAS-UHFFFAOYSA-N 0.000 description 2
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- QIGBRXMKCJKVMJ-UHFFFAOYSA-N Hydroquinone Chemical compound OC1=CC=C(O)C=C1 QIGBRXMKCJKVMJ-UHFFFAOYSA-N 0.000 description 2
- WOBHKFSMXKNTIM-UHFFFAOYSA-N Hydroxyethyl methacrylate Chemical compound CC(=C)C(=O)OCCO WOBHKFSMXKNTIM-UHFFFAOYSA-N 0.000 description 2
- BAPJBEWLBFYGME-UHFFFAOYSA-N Methyl acrylate Chemical compound COC(=O)C=C BAPJBEWLBFYGME-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- 206010034960 Photophobia Diseases 0.000 description 2
- 239000004793 Polystyrene Substances 0.000 description 2
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical group C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 150000001408 amides Chemical class 0.000 description 2
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 2
- 239000007795 chemical reaction product Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011889 copper foil Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 150000002148 esters Chemical class 0.000 description 2
- 230000004907 flux Effects 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 230000001678 irradiating effect Effects 0.000 description 2
- 208000013469 light sensitivity Diseases 0.000 description 2
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 2
- 229910052753 mercury Inorganic materials 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- WDQKICIMIPUDBL-UHFFFAOYSA-N n-[2-(dimethylamino)ethyl]prop-2-enamide Chemical compound CN(C)CCNC(=O)C=C WDQKICIMIPUDBL-UHFFFAOYSA-N 0.000 description 2
- 125000001624 naphthyl group Chemical group 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 229950000688 phenothiazine Drugs 0.000 description 2
- 229920002223 polystyrene Polymers 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- WQGWDDDVZFFDIG-UHFFFAOYSA-N pyrogallol Chemical compound OC1=CC=CC(O)=C1O WQGWDDDVZFFDIG-UHFFFAOYSA-N 0.000 description 2
- CYIDZMCFTVVTJO-UHFFFAOYSA-N pyromellitic acid Chemical compound OC(=O)C1=CC(C(O)=O)=C(C(O)=O)C=C1C(O)=O CYIDZMCFTVVTJO-UHFFFAOYSA-N 0.000 description 2
- GHMLBKRAJCXXBS-UHFFFAOYSA-N resorcinol Chemical compound OC1=CC=CC(O)=C1 GHMLBKRAJCXXBS-UHFFFAOYSA-N 0.000 description 2
- 238000007363 ring formation reaction Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 229910000029 sodium carbonate Inorganic materials 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- FYSNRJHAOHDILO-UHFFFAOYSA-N thionyl chloride Chemical compound ClS(Cl)=O FYSNRJHAOHDILO-UHFFFAOYSA-N 0.000 description 2
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 2
- GGAUUQHSCNMCAU-ZXZARUISSA-N (2s,3r)-butane-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C[C@H](C(O)=O)[C@H](C(O)=O)CC(O)=O GGAUUQHSCNMCAU-ZXZARUISSA-N 0.000 description 1
- MYWOJODOMFBVCB-UHFFFAOYSA-N 1,2,6-trimethylphenanthrene Chemical compound CC1=CC=C2C3=CC(C)=CC=C3C=CC2=C1C MYWOJODOMFBVCB-UHFFFAOYSA-N 0.000 description 1
- IZUKQUVSCNEFMJ-UHFFFAOYSA-N 1,2-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC=C1[N+]([O-])=O IZUKQUVSCNEFMJ-UHFFFAOYSA-N 0.000 description 1
- MSAHTMIQULFMRG-UHFFFAOYSA-N 1,2-diphenyl-2-propan-2-yloxyethanone Chemical compound C=1C=CC=CC=1C(OC(C)C)C(=O)C1=CC=CC=C1 MSAHTMIQULFMRG-UHFFFAOYSA-N 0.000 description 1
- BPXVHIRIPLPOPT-UHFFFAOYSA-N 1,3,5-tris(2-hydroxyethyl)-1,3,5-triazinane-2,4,6-trione Chemical compound OCCN1C(=O)N(CCO)C(=O)N(CCO)C1=O BPXVHIRIPLPOPT-UHFFFAOYSA-N 0.000 description 1
- WDCYWAQPCXBPJA-UHFFFAOYSA-N 1,3-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=CC([N+]([O-])=O)=C1 WDCYWAQPCXBPJA-UHFFFAOYSA-N 0.000 description 1
- WZCQRUWWHSTZEM-UHFFFAOYSA-N 1,3-phenylenediamine Chemical compound NC1=CC=CC(N)=C1 WZCQRUWWHSTZEM-UHFFFAOYSA-N 0.000 description 1
- AZQWKYJCGOJGHM-UHFFFAOYSA-N 1,4-benzoquinone Chemical compound O=C1C=CC(=O)C=C1 AZQWKYJCGOJGHM-UHFFFAOYSA-N 0.000 description 1
- FYFDQJRXFWGIBS-UHFFFAOYSA-N 1,4-dinitrobenzene Chemical compound [O-][N+](=O)C1=CC=C([N+]([O-])=O)C=C1 FYFDQJRXFWGIBS-UHFFFAOYSA-N 0.000 description 1
- CBCKQZAAMUWICA-UHFFFAOYSA-N 1,4-phenylenediamine Chemical compound NC1=CC=C(N)C=C1 CBCKQZAAMUWICA-UHFFFAOYSA-N 0.000 description 1
- TUSDEZXZIZRFGC-UHFFFAOYSA-N 1-O-galloyl-3,6-(R)-HHDP-beta-D-glucose Natural products OC1C(O2)COC(=O)C3=CC(O)=C(O)C(O)=C3C3=C(O)C(O)=C(O)C=C3C(=O)OC1C(O)C2OC(=O)C1=CC(O)=C(O)C(O)=C1 TUSDEZXZIZRFGC-UHFFFAOYSA-N 0.000 description 1
- GWQSENYKCGJTRI-UHFFFAOYSA-N 1-chloro-4-iodobenzene Chemical compound ClC1=CC=C(I)C=C1 GWQSENYKCGJTRI-UHFFFAOYSA-N 0.000 description 1
- 239000012956 1-hydroxycyclohexylphenyl-ketone Substances 0.000 description 1
- KWVGIHKZDCUPEU-UHFFFAOYSA-N 2,2-dimethoxy-2-phenylacetophenone Chemical compound C=1C=CC=CC=1C(OC)(OC)C(=O)C1=CC=CC=C1 KWVGIHKZDCUPEU-UHFFFAOYSA-N 0.000 description 1
- ZVDSMYGTJDFNHN-UHFFFAOYSA-N 2,4,6-trimethylbenzene-1,3-diamine Chemical group CC1=CC(C)=C(N)C(C)=C1N ZVDSMYGTJDFNHN-UHFFFAOYSA-N 0.000 description 1
- BTJPUDCSZVCXFQ-UHFFFAOYSA-N 2,4-diethylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC(CC)=C3SC2=C1 BTJPUDCSZVCXFQ-UHFFFAOYSA-N 0.000 description 1
- QYXHDJJYVDLECA-UHFFFAOYSA-N 2,5-diphenylcyclohexa-2,5-diene-1,4-dione Chemical compound O=C1C=C(C=2C=CC=CC=2)C(=O)C=C1C1=CC=CC=C1 QYXHDJJYVDLECA-UHFFFAOYSA-N 0.000 description 1
- OJSPYCPPVCMEBS-UHFFFAOYSA-N 2,8-dimethyl-5,5-dioxodibenzothiophene-3,7-diamine Chemical compound C12=CC(C)=C(N)C=C2S(=O)(=O)C2=C1C=C(C)C(N)=C2 OJSPYCPPVCMEBS-UHFFFAOYSA-N 0.000 description 1
- KJRQMXRCZULRHF-UHFFFAOYSA-N 2-(4-cyanoanilino)acetic acid Chemical compound OC(=O)CNC1=CC=C(C#N)C=C1 KJRQMXRCZULRHF-UHFFFAOYSA-N 0.000 description 1
- SJIXRGNQPBQWMK-UHFFFAOYSA-N 2-(diethylamino)ethyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCOC(=O)C(C)=C SJIXRGNQPBQWMK-UHFFFAOYSA-N 0.000 description 1
- JKNCOURZONDCGV-UHFFFAOYSA-N 2-(dimethylamino)ethyl 2-methylprop-2-enoate Chemical compound CN(C)CCOC(=O)C(C)=C JKNCOURZONDCGV-UHFFFAOYSA-N 0.000 description 1
- DPBJAVGHACCNRL-UHFFFAOYSA-N 2-(dimethylamino)ethyl prop-2-enoate Chemical compound CN(C)CCOC(=O)C=C DPBJAVGHACCNRL-UHFFFAOYSA-N 0.000 description 1
- GOXQRTZXKQZDDN-UHFFFAOYSA-N 2-Ethylhexyl acrylate Chemical compound CCCCC(CC)COC(=O)C=C GOXQRTZXKQZDDN-UHFFFAOYSA-N 0.000 description 1
- NGNBDVOYPDDBFK-UHFFFAOYSA-N 2-[2,4-di(pentan-2-yl)phenoxy]acetyl chloride Chemical compound CCCC(C)C1=CC=C(OCC(Cl)=O)C(C(C)CCC)=C1 NGNBDVOYPDDBFK-UHFFFAOYSA-N 0.000 description 1
- HWSSEYVMGDIFMH-UHFFFAOYSA-N 2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOC(=O)C(C)=C HWSSEYVMGDIFMH-UHFFFAOYSA-N 0.000 description 1
- LTHJXDSHSVNJKG-UHFFFAOYSA-N 2-[2-[2-[2-(2-methylprop-2-enoyloxy)ethoxy]ethoxy]ethoxy]ethyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCOCCOCCOCCOC(=O)C(C)=C LTHJXDSHSVNJKG-UHFFFAOYSA-N 0.000 description 1
- OJPDDQSCZGTACX-UHFFFAOYSA-N 2-[n-(2-hydroxyethyl)anilino]ethanol Chemical compound OCCN(CCO)C1=CC=CC=C1 OJPDDQSCZGTACX-UHFFFAOYSA-N 0.000 description 1
- UHFFVFAKEGKNAQ-UHFFFAOYSA-N 2-benzyl-2-(dimethylamino)-1-(4-morpholin-4-ylphenyl)butan-1-one Chemical compound C=1C=C(N2CCOCC2)C=CC=1C(=O)C(CC)(N(C)C)CC1=CC=CC=C1 UHFFVFAKEGKNAQ-UHFFFAOYSA-N 0.000 description 1
- KMNCBSZOIQAUFX-UHFFFAOYSA-N 2-ethoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OCC)C(=O)C1=CC=CC=C1 KMNCBSZOIQAUFX-UHFFFAOYSA-N 0.000 description 1
- SJEBAWHUJDUKQK-UHFFFAOYSA-N 2-ethylanthraquinone Chemical compound C1=CC=C2C(=O)C3=CC(CC)=CC=C3C(=O)C2=C1 SJEBAWHUJDUKQK-UHFFFAOYSA-N 0.000 description 1
- WDQMWEYDKDCEHT-UHFFFAOYSA-N 2-ethylhexyl 2-methylprop-2-enoate Chemical compound CCCCC(CC)COC(=O)C(C)=C WDQMWEYDKDCEHT-UHFFFAOYSA-N 0.000 description 1
- UILFRLHKHWDXTQ-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C.OCCOC(=O)C=C.OCCOC(=O)C=C UILFRLHKHWDXTQ-UHFFFAOYSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- BQZJOQXSCSZQPS-UHFFFAOYSA-N 2-methoxy-1,2-diphenylethanone Chemical compound C=1C=CC=CC=1C(OC)C(=O)C1=CC=CC=C1 BQZJOQXSCSZQPS-UHFFFAOYSA-N 0.000 description 1
- LWRBVKNFOYUCNP-UHFFFAOYSA-N 2-methyl-1-(4-methylsulfanylphenyl)-2-morpholin-4-ylpropan-1-one Chemical compound C1=CC(SC)=CC=C1C(=O)C(C)(C)N1CCOCC1 LWRBVKNFOYUCNP-UHFFFAOYSA-N 0.000 description 1
- VTWDKFNVVLAELH-UHFFFAOYSA-N 2-methylcyclohexa-2,5-diene-1,4-dione Chemical compound CC1=CC(=O)C=CC1=O VTWDKFNVVLAELH-UHFFFAOYSA-N 0.000 description 1
- IXPWKHNDQICVPZ-UHFFFAOYSA-N 2-methylhex-1-en-3-yne Chemical compound CCC#CC(C)=C IXPWKHNDQICVPZ-UHFFFAOYSA-N 0.000 description 1
- KTALPKYXQZGAEG-UHFFFAOYSA-N 2-propan-2-ylthioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC(C(C)C)=CC=C3SC2=C1 KTALPKYXQZGAEG-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- YTPSFXZMJKMUJE-UHFFFAOYSA-N 2-tert-butylanthracene-9,10-dione Chemical compound C1=CC=C2C(=O)C3=CC(C(C)(C)C)=CC=C3C(=O)C2=C1 YTPSFXZMJKMUJE-UHFFFAOYSA-N 0.000 description 1
- NUIURNJTPRWVAP-UHFFFAOYSA-N 3,3'-Dimethylbenzidine Chemical compound C1=C(N)C(C)=CC(C=2C=C(C)C(N)=CC=2)=C1 NUIURNJTPRWVAP-UHFFFAOYSA-N 0.000 description 1
- CSZGWTIIEDCAOM-UHFFFAOYSA-N 3,5-bis[[4-(diethylamino)phenyl]methylidene]-1-methylpiperidin-4-one Chemical compound C1=CC(N(CC)CC)=CC=C1C=C(CN(C)C1)C(=O)C1=CC1=CC=C(N(CC)CC)C=C1 CSZGWTIIEDCAOM-UHFFFAOYSA-N 0.000 description 1
- SMDGQEQWSSYZKX-UHFFFAOYSA-N 3-(2,3-dicarboxyphenoxy)phthalic acid Chemical compound OC(=O)C1=CC=CC(OC=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O SMDGQEQWSSYZKX-UHFFFAOYSA-N 0.000 description 1
- FMXFZZAJHRLHGP-UHFFFAOYSA-N 3-(2,3-dicarboxyphenyl)sulfonylphthalic acid Chemical compound OC(=O)C1=CC=CC(S(=O)(=O)C=2C(=C(C(O)=O)C=CC=2)C(O)=O)=C1C(O)=O FMXFZZAJHRLHGP-UHFFFAOYSA-N 0.000 description 1
- PCUPXNDEQDWEMM-UHFFFAOYSA-N 3-(diethylamino)propyl 2-methylprop-2-enoate Chemical compound CCN(CC)CCCOC(=O)C(C)=C PCUPXNDEQDWEMM-UHFFFAOYSA-N 0.000 description 1
- XUYDVDHTTIQNMB-UHFFFAOYSA-N 3-(diethylamino)propyl prop-2-enoate Chemical compound CCN(CC)CCCOC(=O)C=C XUYDVDHTTIQNMB-UHFFFAOYSA-N 0.000 description 1
- WWJCRUKUIQRCGP-UHFFFAOYSA-N 3-(dimethylamino)propyl 2-methylprop-2-enoate Chemical compound CN(C)CCCOC(=O)C(C)=C WWJCRUKUIQRCGP-UHFFFAOYSA-N 0.000 description 1
- UFQHFMGRRVQFNA-UHFFFAOYSA-N 3-(dimethylamino)propyl prop-2-enoate Chemical compound CN(C)CCCOC(=O)C=C UFQHFMGRRVQFNA-UHFFFAOYSA-N 0.000 description 1
- WECDUOXQLAIPQW-UHFFFAOYSA-N 4,4'-Methylene bis(2-methylaniline) Chemical compound C1=C(N)C(C)=CC(CC=2C=C(C)C(N)=CC=2)=C1 WECDUOXQLAIPQW-UHFFFAOYSA-N 0.000 description 1
- XOJWAAUYNWGQAU-UHFFFAOYSA-N 4-(2-methylprop-2-enoyloxy)butyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCOC(=O)C(C)=C XOJWAAUYNWGQAU-UHFFFAOYSA-N 0.000 description 1
- YARZEPAVWOMMHZ-UHFFFAOYSA-N 4-(3,4-dicarboxy-4-phenylcyclohexa-1,5-dien-1-yl)phthalic acid Chemical compound OC(=O)C1C=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)C=CC1(C(O)=O)C1=CC=CC=C1 YARZEPAVWOMMHZ-UHFFFAOYSA-N 0.000 description 1
- UITKHKNFVCYWNG-UHFFFAOYSA-N 4-(3,4-dicarboxybenzoyl)phthalic acid Chemical compound C1=C(C(O)=O)C(C(=O)O)=CC=C1C(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1 UITKHKNFVCYWNG-UHFFFAOYSA-N 0.000 description 1
- QNLCDRXVEPWSBQ-UHFFFAOYSA-N 4-(4,5-dicarboxy-5-phenylcyclohexa-1,3-dien-1-yl)phthalic acid Chemical compound OC(=O)C1=CC=C(C=2C=C(C(C(O)=O)=CC=2)C(O)=O)CC1(C(O)=O)C1=CC=CC=C1 QNLCDRXVEPWSBQ-UHFFFAOYSA-N 0.000 description 1
- HLBLWEWZXPIGSM-UHFFFAOYSA-N 4-Aminophenyl ether Chemical compound C1=CC(N)=CC=C1OC1=CC=C(N)C=C1 HLBLWEWZXPIGSM-UHFFFAOYSA-N 0.000 description 1
- JLBJTVDPSNHSKJ-UHFFFAOYSA-N 4-Methylstyrene Chemical compound CC1=CC=C(C=C)C=C1 JLBJTVDPSNHSKJ-UHFFFAOYSA-N 0.000 description 1
- NWIVYGKSHSJHEF-UHFFFAOYSA-N 4-[(4-amino-3,5-diethylphenyl)methyl]-2,6-diethylaniline Chemical compound CCC1=C(N)C(CC)=CC(CC=2C=C(CC)C(N)=C(CC)C=2)=C1 NWIVYGKSHSJHEF-UHFFFAOYSA-N 0.000 description 1
- OMHOXRVODFQGCA-UHFFFAOYSA-N 4-[(4-amino-3,5-dimethylphenyl)methyl]-2,6-dimethylaniline Chemical compound CC1=C(N)C(C)=CC(CC=2C=C(C)C(N)=C(C)C=2)=C1 OMHOXRVODFQGCA-UHFFFAOYSA-N 0.000 description 1
- BEKFRNOZJSYWKZ-UHFFFAOYSA-N 4-[2-(4-aminophenyl)-1,1,1,3,3,3-hexafluoropropan-2-yl]aniline Chemical compound C1=CC(N)=CC=C1C(C(F)(F)F)(C(F)(F)F)C1=CC=C(N)C=C1 BEKFRNOZJSYWKZ-UHFFFAOYSA-N 0.000 description 1
- ZYEDGEXYGKWJPB-UHFFFAOYSA-N 4-[2-(4-aminophenyl)propan-2-yl]aniline Chemical compound C=1C=C(N)C=CC=1C(C)(C)C1=CC=C(N)C=C1 ZYEDGEXYGKWJPB-UHFFFAOYSA-N 0.000 description 1
- KZTROCYBPMKGAW-UHFFFAOYSA-N 4-[[4-amino-3,5-di(propan-2-yl)phenyl]methyl]-2,6-di(propan-2-yl)aniline Chemical compound CC(C)C1=C(N)C(C(C)C)=CC(CC=2C=C(C(N)=C(C(C)C)C=2)C(C)C)=C1 KZTROCYBPMKGAW-UHFFFAOYSA-N 0.000 description 1
- KFDVPJUYSDEJTH-UHFFFAOYSA-N 4-ethenylpyridine Chemical compound C=CC1=CC=NC=C1 KFDVPJUYSDEJTH-UHFFFAOYSA-N 0.000 description 1
- CQMIJLIXKMKFQW-UHFFFAOYSA-N 4-phenylbenzene-1,2,3,5-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C(C(=O)O)=CC(C(O)=O)=C1C1=CC=CC=C1 CQMIJLIXKMKFQW-UHFFFAOYSA-N 0.000 description 1
- JHWGFJBTMHEZME-UHFFFAOYSA-N 4-prop-2-enoyloxybutyl prop-2-enoate Chemical compound C=CC(=O)OCCCCOC(=O)C=C JHWGFJBTMHEZME-UHFFFAOYSA-N 0.000 description 1
- SAPGBCWOQLHKKZ-UHFFFAOYSA-N 6-(2-methylprop-2-enoyloxy)hexyl 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCCCCCCOC(=O)C(C)=C SAPGBCWOQLHKKZ-UHFFFAOYSA-N 0.000 description 1
- DDILIJVAQMXPMR-UHFFFAOYSA-N 6-butyl-1h-benzimidazol-2-amine Chemical compound CCCCC1=CC=C2N=C(N)NC2=C1 DDILIJVAQMXPMR-UHFFFAOYSA-N 0.000 description 1
- GFHYRJKZFJOIJB-UHFFFAOYSA-N 6-ethyl-1h-benzimidazol-2-amine Chemical compound CCC1=CC=C2N=C(N)NC2=C1 GFHYRJKZFJOIJB-UHFFFAOYSA-N 0.000 description 1
- MZZZAWDOYQWKMR-UHFFFAOYSA-N 6-methyl-1h-benzimidazol-2-amine Chemical compound CC1=CC=C2N=C(N)NC2=C1 MZZZAWDOYQWKMR-UHFFFAOYSA-N 0.000 description 1
- HSEDDANFWUMVCY-UHFFFAOYSA-N 6-nitro-1h-benzimidazol-2-amine Chemical compound C1=C([N+]([O-])=O)C=C2NC(N)=NC2=C1 HSEDDANFWUMVCY-UHFFFAOYSA-N 0.000 description 1
- FIHBHSQYSYVZQE-UHFFFAOYSA-N 6-prop-2-enoyloxyhexyl prop-2-enoate Chemical compound C=CC(=O)OCCCCCCOC(=O)C=C FIHBHSQYSYVZQE-UHFFFAOYSA-N 0.000 description 1
- QZXAEJGHNXJTSE-UHFFFAOYSA-N 7-(ethylamino)-4,6-dimethylchromen-2-one Chemical compound O1C(=O)C=C(C)C2=C1C=C(NCC)C(C)=C2 QZXAEJGHNXJTSE-UHFFFAOYSA-N 0.000 description 1
- YDTZWEXADJYOBJ-UHFFFAOYSA-N 9-(7-acridin-9-ylheptyl)acridine Chemical compound C1=CC=C2C(CCCCCCCC=3C4=CC=CC=C4N=C4C=CC=CC4=3)=C(C=CC=C3)C3=NC2=C1 YDTZWEXADJYOBJ-UHFFFAOYSA-N 0.000 description 1
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 1
- ZZUZFWQZGCBKSY-UHFFFAOYSA-N C1=CC=C2C=CC=C3C(=O)C4=CC=CC=C4C1=C23.[Ti] Chemical compound C1=CC=C2C=CC=C3C(=O)C4=CC=CC=C4C1=C23.[Ti] ZZUZFWQZGCBKSY-UHFFFAOYSA-N 0.000 description 1
- MQJKPEGWNLWLTK-UHFFFAOYSA-N Dapsone Chemical compound C1=CC(N)=CC=C1S(=O)(=O)C1=CC=C(N)C=C1 MQJKPEGWNLWLTK-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- JOYRKODLDBILNP-UHFFFAOYSA-N Ethyl urethane Chemical compound CCOC(N)=O JOYRKODLDBILNP-UHFFFAOYSA-N 0.000 description 1
- 239000001263 FEMA 3042 Substances 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- OWYWGLHRNBIFJP-UHFFFAOYSA-N Ipazine Chemical compound CCN(CC)C1=NC(Cl)=NC(NC(C)C)=N1 OWYWGLHRNBIFJP-UHFFFAOYSA-N 0.000 description 1
- VVQNEPGJFQJSBK-UHFFFAOYSA-N Methyl methacrylate Chemical compound COC(=O)C(C)=C VVQNEPGJFQJSBK-UHFFFAOYSA-N 0.000 description 1
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 1
- CNCOEDDPFOAUMB-UHFFFAOYSA-N N-Methylolacrylamide Chemical compound OCNC(=O)C=C CNCOEDDPFOAUMB-UHFFFAOYSA-N 0.000 description 1
- XQVWYOYUZDUNRW-UHFFFAOYSA-N N-Phenyl-1-naphthylamine Chemical compound C=1C=CC2=CC=CC=C2C=1NC1=CC=CC=C1 XQVWYOYUZDUNRW-UHFFFAOYSA-N 0.000 description 1
- WHNWPMSKXPGLAX-UHFFFAOYSA-N N-Vinyl-2-pyrrolidone Chemical compound C=CN1CCCC1=O WHNWPMSKXPGLAX-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-PPKXGCFTSA-N Penta-digallate-beta-D-glucose Natural products OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-PPKXGCFTSA-N 0.000 description 1
- AUNGANRZJHBGPY-SCRDCRAPSA-N Riboflavin Chemical compound OC[C@@H](O)[C@@H](O)[C@@H](O)CN1C=2C=C(C)C(C)=CC=2N=C2C1=NC(=O)NC2=O AUNGANRZJHBGPY-SCRDCRAPSA-N 0.000 description 1
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 description 1
- LCXXNKZQVOXMEH-UHFFFAOYSA-N Tetrahydrofurfuryl methacrylate Chemical compound CC(=C)C(=O)OCC1CCCO1 LCXXNKZQVOXMEH-UHFFFAOYSA-N 0.000 description 1
- GSEJCLTVZPLZKY-UHFFFAOYSA-N Triethanolamine Chemical compound OCCN(CCO)CCO GSEJCLTVZPLZKY-UHFFFAOYSA-N 0.000 description 1
- DAKWPKUUDNSNPN-UHFFFAOYSA-N Trimethylolpropane triacrylate Chemical compound C=CC(=O)OCC(CC)(COC(=O)C=C)COC(=O)C=C DAKWPKUUDNSNPN-UHFFFAOYSA-N 0.000 description 1
- OKKRPWIIYQTPQF-UHFFFAOYSA-N Trimethylolpropane trimethacrylate Chemical compound CC(=C)C(=O)OCC(CC)(COC(=O)C(C)=C)COC(=O)C(C)=C OKKRPWIIYQTPQF-UHFFFAOYSA-N 0.000 description 1
- 229920001646 UPILEX Polymers 0.000 description 1
- QYKIQEUNHZKYBP-UHFFFAOYSA-N Vinyl ether Chemical group C=COC=C QYKIQEUNHZKYBP-UHFFFAOYSA-N 0.000 description 1
- TUOBEAZXHLTYLF-UHFFFAOYSA-N [2-(hydroxymethyl)-2-(prop-2-enoyloxymethyl)butyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(CC)COC(=O)C=C TUOBEAZXHLTYLF-UHFFFAOYSA-N 0.000 description 1
- JUDXBRVLWDGRBC-UHFFFAOYSA-N [2-(hydroxymethyl)-3-(2-methylprop-2-enoyloxy)-2-(2-methylprop-2-enoyloxymethyl)propyl] 2-methylprop-2-enoate Chemical compound CC(=C)C(=O)OCC(CO)(COC(=O)C(C)=C)COC(=O)C(C)=C JUDXBRVLWDGRBC-UHFFFAOYSA-N 0.000 description 1
- HVVWZTWDBSEWIH-UHFFFAOYSA-N [2-(hydroxymethyl)-3-prop-2-enoyloxy-2-(prop-2-enoyloxymethyl)propyl] prop-2-enoate Chemical compound C=CC(=O)OCC(CO)(COC(=O)C=C)COC(=O)C=C HVVWZTWDBSEWIH-UHFFFAOYSA-N 0.000 description 1
- FDLQZKYLHJJBHD-UHFFFAOYSA-N [3-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=CC(CN)=C1 FDLQZKYLHJJBHD-UHFFFAOYSA-N 0.000 description 1
- ISKQADXMHQSTHK-UHFFFAOYSA-N [4-(aminomethyl)phenyl]methanamine Chemical compound NCC1=CC=C(CN)C=C1 ISKQADXMHQSTHK-UHFFFAOYSA-N 0.000 description 1
- WLNIECNLFRHWOI-UHFFFAOYSA-N [[4-(4-diazonioimino-3-methoxycyclohexa-2,5-dien-1-ylidene)-2-methoxycyclohexa-2,5-dien-1-ylidene]hydrazinylidene]azanide Chemical group C1=C(N=[N+]=[N-])C(OC)=CC(C=2C=C(OC)C(N=[N+]=[N-])=CC=2)=C1 WLNIECNLFRHWOI-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 125000001931 aliphatic group Chemical group 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 125000002947 alkylene group Chemical group 0.000 description 1
- 125000005263 alkylenediamine group Chemical group 0.000 description 1
- 150000008064 anhydrides Chemical class 0.000 description 1
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 1
- 125000003710 aryl alkyl group Chemical group 0.000 description 1
- 239000003637 basic solution Substances 0.000 description 1
- RWCCWEUUXYIKHB-UHFFFAOYSA-N benzophenone Chemical compound C=1C=CC=CC=1C(=O)C1=CC=CC=C1 RWCCWEUUXYIKHB-UHFFFAOYSA-N 0.000 description 1
- 239000012965 benzophenone Substances 0.000 description 1
- MQDJYUACMFCOFT-UHFFFAOYSA-N bis[2-(1-hydroxycyclohexyl)phenyl]methanone Chemical compound C=1C=CC=C(C(=O)C=2C(=CC=CC=2)C2(O)CCCCC2)C=1C1(O)CCCCC1 MQDJYUACMFCOFT-UHFFFAOYSA-N 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- CQEYYJKEWSMYFG-UHFFFAOYSA-N butyl acrylate Chemical compound CCCCOC(=O)C=C CQEYYJKEWSMYFG-UHFFFAOYSA-N 0.000 description 1
- 229930188620 butyrolactone Natural products 0.000 description 1
- 238000011088 calibration curve Methods 0.000 description 1
- 150000001718 carbodiimides Chemical class 0.000 description 1
- 150000001721 carbon Chemical group 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 125000000490 cinnamyl group Chemical group C(C=CC1=CC=CC=C1)* 0.000 description 1
- AFYCEAFSNDLKSX-UHFFFAOYSA-N coumarin 460 Chemical compound CC1=CC(=O)OC2=CC(N(CC)CC)=CC=C21 AFYCEAFSNDLKSX-UHFFFAOYSA-N 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- DIHZWJQLZIPGLR-UHFFFAOYSA-N cyclobut-3-ene-1,1,2,2-tetracarboxylic acid Chemical class OC(=O)C1(C(O)=O)C=CC1(C(O)=O)C(O)=O DIHZWJQLZIPGLR-UHFFFAOYSA-N 0.000 description 1
- SSJXIUAHEKJCMH-UHFFFAOYSA-N cyclohexane-1,2-diamine Chemical compound NC1CCCCC1N SSJXIUAHEKJCMH-UHFFFAOYSA-N 0.000 description 1
- GEQHKFFSPGPGLN-UHFFFAOYSA-N cyclohexane-1,3-diamine Chemical compound NC1CCCC(N)C1 GEQHKFFSPGPGLN-UHFFFAOYSA-N 0.000 description 1
- VKIRRGRTJUUZHS-UHFFFAOYSA-N cyclohexane-1,4-diamine Chemical compound NC1CCC(N)CC1 VKIRRGRTJUUZHS-UHFFFAOYSA-N 0.000 description 1
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 1
- 125000006159 dianhydride group Chemical group 0.000 description 1
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 1
- 230000000447 dimerizing effect Effects 0.000 description 1
- ZZTCPWRAHWXWCH-UHFFFAOYSA-N diphenylmethanediamine Chemical compound C=1C=CC=CC=1C(N)(N)C1=CC=CC=C1 ZZTCPWRAHWXWCH-UHFFFAOYSA-N 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- KGGOIDKBHYYNIC-UHFFFAOYSA-N ditert-butyl 4-[3,4-bis(tert-butylperoxycarbonyl)benzoyl]benzene-1,2-dicarboperoxoate Chemical compound C1=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=CC=C1C(=O)C1=CC=C(C(=O)OOC(C)(C)C)C(C(=O)OOC(C)(C)C)=C1 KGGOIDKBHYYNIC-UHFFFAOYSA-N 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- ZSWFCLXCOIISFI-UHFFFAOYSA-N endo-cyclopentadiene Natural products C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 1
- SUPCQIBBMFXVTL-UHFFFAOYSA-N ethyl 2-methylprop-2-enoate Chemical compound CCOC(=O)C(C)=C SUPCQIBBMFXVTL-UHFFFAOYSA-N 0.000 description 1
- XPKFLEVLLPKCIW-UHFFFAOYSA-N ethyl 4-(diethylamino)benzoate Chemical compound CCOC(=O)C1=CC=C(N(CC)CC)C=C1 XPKFLEVLLPKCIW-UHFFFAOYSA-N 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000003916 ethylene diamine group Chemical group 0.000 description 1
- 125000000816 ethylene group Chemical group [H]C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 230000033444 hydroxylation Effects 0.000 description 1
- 238000005805 hydroxylation reaction Methods 0.000 description 1
- 125000004464 hydroxyphenyl group Chemical group 0.000 description 1
- 238000007654 immersion Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- ZFSLODLOARCGLH-UHFFFAOYSA-N isocyanuric acid Chemical compound OC1=NC(O)=NC(O)=N1 ZFSLODLOARCGLH-UHFFFAOYSA-N 0.000 description 1
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 description 1
- CDOSHBSSFJOMGT-UHFFFAOYSA-N linalool Chemical compound CC(C)=CCCC(C)(O)C=C CDOSHBSSFJOMGT-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 125000001570 methylene group Chemical group [H]C([H])([*:1])[*:2] 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- ZIUHHBKFKCYYJD-UHFFFAOYSA-N n,n'-methylenebisacrylamide Chemical compound C=CC(=O)NCNC(=O)C=C ZIUHHBKFKCYYJD-UHFFFAOYSA-N 0.000 description 1
- 229940088644 n,n-dimethylacrylamide Drugs 0.000 description 1
- YLGYACDQVQQZSW-UHFFFAOYSA-N n,n-dimethylprop-2-enamide Chemical compound CN(C)C(=O)C=C YLGYACDQVQQZSW-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- OBKARQMATMRWQZ-UHFFFAOYSA-N naphthalene-1,2,5,6-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=CC2=C(C(O)=O)C(C(=O)O)=CC=C21 OBKARQMATMRWQZ-UHFFFAOYSA-N 0.000 description 1
- OLAPPGSPBNVTRF-UHFFFAOYSA-N naphthalene-1,4,5,8-tetracarboxylic acid Chemical compound C1=CC(C(O)=O)=C2C(C(=O)O)=CC=C(C(O)=O)C2=C1C(O)=O OLAPPGSPBNVTRF-UHFFFAOYSA-N 0.000 description 1
- KQSABULTKYLFEV-UHFFFAOYSA-N naphthalene-1,5-diamine Chemical compound C1=CC=C2C(N)=CC=CC2=C1N KQSABULTKYLFEV-UHFFFAOYSA-N 0.000 description 1
- DOBFTMLCEYUAQC-UHFFFAOYSA-N naphthalene-2,3,6,7-tetracarboxylic acid Chemical compound OC(=O)C1=C(C(O)=O)C=C2C=C(C(O)=O)C(C(=O)O)=CC2=C1 DOBFTMLCEYUAQC-UHFFFAOYSA-N 0.000 description 1
- 150000004005 nitrosamines Chemical class 0.000 description 1
- 150000002923 oximes Chemical class 0.000 description 1
- 125000003854 p-chlorophenyl group Chemical group [H]C1=C([H])C(*)=C([H])C([H])=C1Cl 0.000 description 1
- NWVVVBRKAWDGAB-UHFFFAOYSA-N p-methoxyphenol Chemical compound COC1=CC=C(O)C=C1 NWVVVBRKAWDGAB-UHFFFAOYSA-N 0.000 description 1
- BQIVQQFTLJPGGJ-UHFFFAOYSA-N pent-1-enyl 2-methylprop-2-enoate Chemical compound CCCC=COC(=O)C(C)=C BQIVQQFTLJPGGJ-UHFFFAOYSA-N 0.000 description 1
- CDHUYRBKZIBYPP-UHFFFAOYSA-N pent-1-enyl prop-2-enoate Chemical compound CCCC=COC(=O)C=C CDHUYRBKZIBYPP-UHFFFAOYSA-N 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
- 229920005575 poly(amic acid) Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 125000004368 propenyl group Chemical group C(=CC)* 0.000 description 1
- 125000004805 propylene group Chemical group [H]C([H])([H])C([H])([*:1])C([H])([H])[*:2] 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 229940079877 pyrogallol Drugs 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 229960001755 resorcinol Drugs 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- HXJUTPCZVOIRIF-UHFFFAOYSA-N sulfolane Chemical compound O=S1(=O)CCCC1 HXJUTPCZVOIRIF-UHFFFAOYSA-N 0.000 description 1
- 150000003457 sulfones Chemical class 0.000 description 1
- MUTNCGKQJGXKEM-UHFFFAOYSA-N tamibarotene Chemical compound C=1C=C2C(C)(C)CCC(C)(C)C2=CC=1NC(=O)C1=CC=C(C(O)=O)C=C1 MUTNCGKQJGXKEM-UHFFFAOYSA-N 0.000 description 1
- LRBQNJMCXXYXIU-NRMVVENXSA-N tannic acid Chemical compound OC1=C(O)C(O)=CC(C(=O)OC=2C(=C(O)C=C(C=2)C(=O)OC[C@@H]2[C@H]([C@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)[C@@H](OC(=O)C=3C=C(OC(=O)C=4C=C(O)C(O)=C(O)C=4)C(O)=C(O)C=3)O2)OC(=O)C=2C=C(OC(=O)C=3C=C(O)C(O)=C(O)C=3)C(O)=C(O)C=2)O)=C1 LRBQNJMCXXYXIU-NRMVVENXSA-N 0.000 description 1
- 229940033123 tannic acid Drugs 0.000 description 1
- 235000015523 tannic acid Nutrition 0.000 description 1
- 229920002258 tannic acid Polymers 0.000 description 1
- QEMXHQIAXOOASZ-UHFFFAOYSA-N tetramethylammonium Chemical compound C[N+](C)(C)C QEMXHQIAXOOASZ-UHFFFAOYSA-N 0.000 description 1
- YRHRIQCWCFGUEQ-UHFFFAOYSA-N thioxanthen-9-one Chemical compound C1=CC=C2C(=O)C3=CC=CC=C3SC2=C1 YRHRIQCWCFGUEQ-UHFFFAOYSA-N 0.000 description 1
- DVKJHBMWWAPEIU-UHFFFAOYSA-N toluene 2,4-diisocyanate Chemical compound CC1=CC=C(N=C=O)C=C1N=C=O DVKJHBMWWAPEIU-UHFFFAOYSA-N 0.000 description 1
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 description 1
- YFNKIDBQEZZDLK-UHFFFAOYSA-N triglyme Chemical compound COCCOCCOCCOC YFNKIDBQEZZDLK-UHFFFAOYSA-N 0.000 description 1
- 229940096522 trimethylolpropane triacrylate Drugs 0.000 description 1
- ROVRRJSRRSGUOL-UHFFFAOYSA-N victoria blue bo Chemical compound [Cl-].C12=CC=CC=C2C(NCC)=CC=C1C(C=1C=CC(=CC=1)N(CC)CC)=C1C=CC(=[N+](CC)CC)C=C1 ROVRRJSRRSGUOL-UHFFFAOYSA-N 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 239000013585 weight reducing agent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/032—Organic insulating material consisting of one material
- H05K1/0346—Organic insulating material consisting of one material containing N
Landscapes
- Macromolecular Compounds Obtained By Forming Nitrogen-Containing Linkages In General (AREA)
- Macromonomer-Based Addition Polymer (AREA)
Abstract
Description
【0001】[0001]
【発明の属する技術分野】本発明は、ポリイミド、その
前駆体、それらの製造法及び感光性樹脂組成物に関す
る。[0001] The present invention relates to a polyimide, a precursor thereof, a method for producing them, and a photosensitive resin composition.
【0002】[0002]
【従来の技術】近年、電子機器の小型化、軽量化、多機
能化、高信頼化、低価格化に対応して、プリント配線板
では、表面実装方式と呼ばれる部品穴を使わないで導体
パターンの表面で部品と基板との電気的接続を行う部品
搭載方法が急激に伸展している。プリント配線板の製造
には、従来よりはんだ付け位置の限定及び配線の保護の
目的で感光性ソルダーレジストが用いられているが、表
面実装方式を用いるプリント配線板に使用される感光性
ソルダーレジストには、より優れた耐熱性、耐湿性及び
密着性等が要求され、従来のエポキシ樹脂を主成分とす
る感光性ソルダーレジストでは、プレッシャー・クッカ
ー・テスト(以下PCTと略す)を行うと、レジストに
ふくれや剥がれが生じてしまい、耐熱性、耐湿性及び密
着性が不十分であるという問題がある。2. Description of the Related Art In recent years, in response to the miniaturization, weight reduction, multifunctionality, high reliability, and low price of electronic devices, printed circuit boards have been required to use conductive patterns without using component holes called surface mounting methods. A component mounting method for electrically connecting a component to a substrate on the surface of a semiconductor device is rapidly expanding. In the manufacture of printed wiring boards, photosensitive solder resist has been used for the purpose of limiting the soldering position and protecting the wiring, but the photosensitive solder resist used for printed wiring boards using the surface mounting method has been used. Is required to have better heat resistance, moisture resistance and adhesiveness. In the case of a conventional photosensitive solder resist containing an epoxy resin as a main component, when a pressure cooker test (hereinafter abbreviated as PCT) is performed, the resist becomes There is a problem that blistering or peeling occurs and heat resistance, moisture resistance and adhesion are insufficient.
【0003】一方、半導体分野では、耐熱性、耐湿性及
び密着性に優れる感光性ポリイミド樹脂が配線保護のた
め使用されている。しかし、感光性ポリイミドは、像形
成時にはポリイミドの前駆体のポリアミド酸の形態で用
いること、また、溶媒として高沸点の含窒素系極性溶媒
を用いることから、上記の優れた特性の硬化膜を得るに
は、通常300℃以上の高温硬化を必要とする。そのた
め、基板等の耐熱性の点から、プリント配線板には使用
できないという問題がある。On the other hand, in the field of semiconductors, photosensitive polyimide resins having excellent heat resistance, moisture resistance and adhesion are used for protecting wiring. However, photosensitive polyimide is used in the form of a polyamic acid as a polyimide precursor at the time of image formation, and since a high-boiling nitrogen-containing polar solvent is used as a solvent, a cured film having the above excellent characteristics is obtained. Requires high-temperature curing, usually at 300 ° C. or higher. Therefore, there is a problem that it cannot be used for a printed wiring board from the viewpoint of heat resistance of a substrate or the like.
【0004】[0004]
【発明が解決しようとする課題】請求項1及び2記載の
発明は、低温硬化性であり、優れた耐熱性、耐湿性、密
着性等を有するポリイミドを与えるポリイミド前駆体を
提供するものである。また請求項3〜7記載の発明は、
低温硬化性であり、優れた耐熱性、耐湿性、密着性等を
有するポリイミドを与えるポリイミド前駆体を容易に製
造し得るポリイミド前駆体の製造法を提供するものであ
る。SUMMARY OF THE INVENTION The first and second aspects of the present invention provide a polyimide precursor which is curable at a low temperature and gives a polyimide having excellent heat resistance, moisture resistance, adhesion and the like. . The invention according to claims 3 to 7 is
An object of the present invention is to provide a method for producing a polyimide precursor which can be easily produced to give a polyimide which is low-temperature curable and has excellent heat resistance, moisture resistance, adhesion and the like.
【0005】また請求項8記載の発明は、優れた耐熱
性、耐湿性、密着性等を有するポリイミドを提供するも
のである。また請求項9記載の発明は、優れた耐熱性、
耐湿性、密着性を有するポリイミドを容易に製造できる
製造法を提供するものである。さらに請求項10記載の
発明は、低温硬化性であり、優れた耐熱性、耐湿性、密
着性等を有するポリイミド膜を与え、現像性、保存安定
性に優れた感光性樹脂組成物を提供するものである。The invention according to claim 8 provides a polyimide having excellent heat resistance, moisture resistance, adhesion and the like. The invention according to claim 9 has excellent heat resistance,
An object of the present invention is to provide a production method capable of easily producing a polyimide having moisture resistance and adhesion. Further, the invention according to claim 10 provides a photosensitive resin composition which is curable at a low temperature, provides a polyimide film having excellent heat resistance, moisture resistance, adhesion and the like, and is excellent in developability and storage stability. Things.
【0006】[0006]
【課題を解決するための手段】本発明は、一般式(I)The present invention provides a compound represented by the general formula (I):
【化6】 (式中、R1は4価の有機基を示し、R2は少なくとも1
個の芳香環を含む2価の有機基を示し、Xはそれぞれ独
立にOH又は1価の有機基を示す)で表される繰り返し
単位、一般式(II)Embedded image (Wherein, R 1 represents a tetravalent organic group, and R 2 has at least 1
X represents a divalent organic group containing two aromatic rings, and each X independently represents OH or a monovalent organic group), a repeating unit represented by the general formula (II):
【化7】 (式中、R1は4価の有機基を示し、R3は芳香環を含ま
ない2価の有機基を示し、Xはそれぞれ独立にOH又は
1価の有機基を示す)で表される繰り返し単位を有し、
さらに一部又は全部の分子が一般式(III)Embedded image (Wherein, R 1 represents a tetravalent organic group, R 3 represents a divalent organic group not containing an aromatic ring, and X each independently represents OH or a monovalent organic group). Having a repeating unit,
Further, some or all of the molecules have the general formula (III)
【化8】 (式中、R4はハロゲン、ニトロ基又は炭素数1〜9の
アルキル基を示し、nは0〜4の整数である)で表され
る末端を片方又は両方に有してなるポリイミド前駆体に
関する。Embedded image (Wherein, R4 represents a halogen, a nitro group or an alkyl group having 1 to 9 carbon atoms, and n is an integer of 0 to 4). .
【0007】また本発明は、一般式(II)で示される繰
り返し単位におけるR3で表される2価の有機基が、Further, the present invention provides a divalent organic group represented by R 3 in the repeating unit represented by the general formula (II):
【化9】 (式中、R5は−CHR8−CH2−、−CH2−CH2−
又は−CH2−CHR8−を示し、a、b及びcは式中に
おける繰り返し単位の数を意味し、a及びbは0又は正
の整数、cは正の整数であり、R6、R7及びR8は炭素
数1〜3のアルキル基である)である前記ポリイミド前
駆体に関する。Embedded image (Wherein, R 5 is -CHR 8 -CH 2 -, - CH 2 -CH 2 -
Or -CH 2 -CHR 8 - shows a, a, b and c denotes the number of repeating units in the formula, a and b are 0 or a positive integer, c is a positive integer, R 6, R 7 and R 8 are an alkyl group having 1 to 3 carbon atoms).
【0008】また本発明は、(A)テトラカルボン酸二
無水物又はその誘導体、(B)少なくとも1個の芳香環
を含むジアミン、(C)芳香環を含まないジアミン及び
(D)一般式(IV)The present invention also relates to (A) tetracarboxylic dianhydride or a derivative thereof, (B) a diamine containing at least one aromatic ring, (C) a diamine containing no aromatic ring, and (D) a diamine containing an aromatic ring. IV)
【化10】 (式中、nは0〜4の整数であり、R4はハロゲン、ニ
トロ基又は炭素数1〜9のアルキル基を示す)で表され
るアミノベンズイミダゾールを反応させることを特徴と
するポリイミド前駆体の製造法に関する。Embedded image Wherein n is an integer of 0 to 4 and R 4 represents a halogen, a nitro group or an alkyl group having 1 to 9 carbon atoms, wherein the aminobenzimidazole represented by the following formula is reacted: It relates to the method of manufacturing the body.
【0009】また本発明は、非含窒素系極性溶媒中で反
応させる前記ポリイミド前駆体の製造法に関する。また
本発明は、前記(C)芳香環を含まないジアミンの使用
量が、全アミン使用量の1〜90モル%である前記ポリ
イミド前駆体の製造法に関する。また本発明は、前記
(D)一般式(IV)で表されるアミノベンズイミダゾー
ルの使用量が、全アミン使用量の0.1〜10モル%で
ある前記ポリイミド前駆体の製造法に関する。また本発
明は、非含窒素系極性溶媒がγ−ブチロラクトンである
前記ポリイミド前駆体の製造法に関する。The present invention also relates to a method for producing the polyimide precursor, which is reacted in a non-nitrogen-containing polar solvent. The present invention also relates to the method for producing the polyimide precursor, wherein (C) the diamine containing no aromatic ring is used in an amount of 1 to 90 mol% of the total amine used. Further, the present invention relates to the method for producing the polyimide precursor, wherein (D) the aminobenzimidazole represented by the general formula (IV) is used in an amount of 0.1 to 10 mol% of the total amine used. The present invention also relates to the method for producing the polyimide precursor, wherein the non-nitrogen-containing polar solvent is γ-butyrolactone.
【0010】また本発明は、前記ポリイミド前駆体をイ
ミド閉環させてなるポリイミドに関する。また本発明
は、前記ポリイミド前駆体をイミド閉環させることを特
徴とするポリイミドの製造法に関する。さらに本発明
は、前記ポリイミド前駆体及び感光剤を含有してなる感
光性樹脂組成物に関する。[0010] The present invention also relates to a polyimide obtained by subjecting the polyimide precursor to imide ring closure. The present invention also relates to a method for producing a polyimide, wherein the polyimide precursor is subjected to imide ring closure. Furthermore, the present invention relates to a photosensitive resin composition containing the polyimide precursor and a photosensitive agent.
【0011】[0011]
【発明の実施の形態】本発明のポリイミド前駆体は、前
記一般式(I)及び(II)で表される繰り返し単位を有
し、かつ、一部又は全部の分子が前記一般式(III)で
表される末端構造を片方又は両方に有するものである。
各一般式におけるR1は、4価の有機基であり、一般に
ジアミンと反応してポリイミド前駆体を形成し得るテト
ラカルボン酸又はその誘導体(酸無水物など)の残基で
ある。4価の有機基の総炭素数としては4〜40である
ことが好ましい。4価の有機基としては、芳香環を含む
基、芳香環を含まずに脂肪族環を含む基等が好ましく、
芳香環を含む基がより好ましい。芳香環(ベンゼン環、
ナフタレン環、ピリジン環等)を含む基としては、R1
に存在する4個の結合部位はいずれも芳香環上に直接存
在することが好ましい。これらの結合部位は、2個ずつ
の2組に分けられ、各組の2個の結合部位が芳香環のオ
ルト位又はペリ位に位置することが好ましい。前記の2
組は同一の芳香環上に存在してもよいし、各種結合を介
して結合している別々の芳香環上に存在してもよい。本
発明のポリイミド前駆体に存在する複数の繰り返し単位
において、R1は同一でも異なっていてもよい。BEST MODE FOR CARRYING OUT THE INVENTION The polyimide precursor of the present invention has the repeating units represented by the general formulas (I) and (II), and some or all of the molecules have the general formula (III) Has one or both of the terminal structures represented by
R 1 in each general formula is a tetravalent organic group, and is generally a residue of a tetracarboxylic acid or a derivative thereof (an acid anhydride or the like) that can react with a diamine to form a polyimide precursor. The total carbon number of the tetravalent organic group is preferably 4 to 40. As the tetravalent organic group, a group containing an aromatic ring, a group containing an aliphatic ring without containing an aromatic ring, and the like are preferable.
Groups containing an aromatic ring are more preferred. Aromatic ring (benzene ring,
The group containing a naphthalene ring, a pyridine ring, etc.), R 1
Are preferably present directly on the aromatic ring. These binding sites are divided into two sets of two, and two binding sites in each set are preferably located at the ortho or peri position of the aromatic ring. Said 2
The sets may be on the same aromatic ring or on separate aromatic rings linked through various bonds. In a plurality of repeating units present in the polyimide precursor of the present invention, R 1 may be the same or different.
【0012】上記R1で示される残基を与えるテトラカ
ルボン酸又はその誘導体としては、例えば、オキシジフ
タル酸、ピロメリット酸、3,3′,4,4′−ベンゾ
フェノンテトラカルボン酸、3,3′,4,4′−ビフ
ェニルテトラカルボン酸、1,2,5,6−ナフタレン
テトラカルボン酸、2,3,6,7−ナフタレンテトラ
カルボン酸、1,4,5,8−ナフタレンテトラカルボ
ン酸、スルホニルジフタル酸、m−ターフェニル−3,
3′,4,4′−テトラカルボン酸、p−ターフェニル
−3,3′,4,4′−テトラカルボン酸、1,1,
1,3,3,3−ヘキサフルオロ−2,2−ビス(2,
3−又は3,4−ジカルボキシフェニル)プロパン、
2,2−ビス(2,3−又は3,4−ジカルボキシフェ
ニル)プロパン、2,2−ビス〔4′−(2,3−又は
3,4−ジカルボキシフェノキシ)フェニル〕プロパ
ン、1,1,1,3,3,3−ヘキサフルオロ−2,2
−ビス〔4′−(2,3−又は3,4−ジカルボキシフ
ェノキシ)フェニル〕プロパン等の芳香族テトラカルボ
ン酸、これらの二無水物、下記一般式(V)Examples of the tetracarboxylic acid or a derivative thereof that provides the residue represented by R 1 include oxydiphthalic acid, pyromellitic acid, 3,3 ′, 4,4′-benzophenonetetracarboxylic acid, and 3,3 ′ 2,4,4'-biphenyltetracarboxylic acid, 1,2,5,6-naphthalenetetracarboxylic acid, 2,3,6,7-naphthalenetetracarboxylic acid, 1,4,5,8-naphthalenetetracarboxylic acid, Sulfonyl diphthalic acid, m-terphenyl-3,
3 ′, 4,4′-tetracarboxylic acid, p-terphenyl-3,3 ′, 4,4′-tetracarboxylic acid, 1,1,
1,3,3,3-hexafluoro-2,2-bis (2
3- or 3,4-dicarboxyphenyl) propane,
2,2-bis (2,3- or 3,4-dicarboxyphenyl) propane, 2,2-bis [4 '-(2,3- or 3,4-dicarboxyphenoxy) phenyl] propane, 1, 1,1,3,3,3-hexafluoro-2,2
Aromatic tetracarboxylic acids such as -bis [4 '-(2,3- or 3,4-dicarboxyphenoxy) phenyl] propane, dianhydrides thereof, and the following general formula (V)
【化11】 (式中、R9及びR10はそれぞれ独立に一価の炭化水素
基、好ましくは炭素数1〜10の炭化水素基を示し、複
数存在する場合はそれぞれ同一でも異なっていてもよ
く、lは1以上、好ましくは1〜10の整数である)で
表される芳香族テトラカルボン酸二無水物、シクロブテ
ンテトラカルボン酸、ブタンテトラカルボン酸等の脂肪
族テトラカルボン酸、これらの二無水物などが挙げら
れ、これらは単独で又は2種類以上を組み合わせて使用
される。Embedded image (In the formula, R 9 and R 10 each independently represent a monovalent hydrocarbon group, preferably a hydrocarbon group having 1 to 10 carbon atoms. When a plurality of carbon atoms are present, they may be the same or different. 1 or more, preferably an integer of 1 to 10), such as aromatic tetracarboxylic dianhydrides, cyclobutenetetracarboxylic acids and aliphatic tetracarboxylic acids such as butanetetracarboxylic acid; And these may be used alone or in combination of two or more.
【0013】一般式(I)において、R2で示される芳
香環を含む2価の有機基とは、一般に、テトラカルボン
酸又はその誘導体と反応してポリイミド前駆体を形成し
得る芳香族ジアミン化合物の残基である。前記2価の有
機基としては総炭素数が4〜40のものが好ましい。こ
こで、芳香環としては、ベンゼン環、ナフタレン環、ピ
リジン環等がある。芳香環の数としては、1〜4である
ことが好ましい。R2に存在する2個の結合部位は芳香
環上に直接存在するものが好ましく、この場合その2個
の結合部位は同一の芳香環上に存在しても異なった芳香
環上に存在してもよい。In the general formula (I), the divalent organic group containing an aromatic ring represented by R 2 is generally an aromatic diamine compound capable of forming a polyimide precursor by reacting with tetracarboxylic acid or a derivative thereof. Residue. The divalent organic group preferably has 4 to 40 carbon atoms. Here, examples of the aromatic ring include a benzene ring, a naphthalene ring, and a pyridine ring. The number of aromatic rings is preferably from 1 to 4. Preferably, the two binding sites present on R 2 are present directly on the aromatic ring, in which case the two binding sites may be present on the same aromatic ring but on different aromatic rings. Is also good.
【0014】上記R2で示されるを残基として与えるジ
アミンとしては、例えば、4,4′−(又は3,4′
−、−3,3′−、2,4′−、2,2′−)ジアミノ
ジフェニルエーテル)、4,4′−(又は3,4′−、
−3,3′−、2,4′−、2,2′−)ジアミノジフ
ェニルメタン、4,4′−(又は3,4′−、−3,
3′−、2,4′−、2,2′−)ジアミノジフェニル
スルホン、4,4′−(又は3,4′−、−3,3′
−、2,4′−、2,2′−)ジアミノジフェニルスル
フィド、パラフェニレンジアミン、メタフェニレンジア
ミン、p−キシリレンジアミン、m−キシリレンジアミ
ン、o−トリジン、o−トリジンスルホン、4,4′−
メチレン−ビス(2,6−ジエチルアニリン)、4,
4′−メチレン−ビス−(2,6−ジイソプロピルアニ
リン)、2,4−ジアミノメシチレン、1,5−ジアミ
ノナフタレン、4,4′−ベンゾフェノンジアミン、ビ
ス〔4−(4′−アミノフェノキシ)フェニル〕スルホ
ン、1,1,1,3,3,3−ヘキサフルオロ−2,2
−ビス(4−アミノフェニル)プロパン、2,2−ビス
〔4−(4′−アミノフェノキシ)フェニル〕プロパ
ン、3,3′−ジメチル−4,4′−ジアミノジフェニ
ルメタン、3,3′,5,5′−テトラメチル−4,
4′−ジアミノジフェニルメタン、ビス〔4−(3′−
アミノフェノキシ)フェニル〕スルホン、2,2−ビス
(4−アミノフェニル)プロパン等が挙げられ、これら
は単独で又は2種類以上を組み合わせて使用することも
できる。Examples of the diamine providing the residue represented by R 2 as a residue include, for example, 4,4 ′-(or 3,4 ′)
-, -3,3'-, 2,4'-, 2,2'-) diaminodiphenyl ether), 4,4'- (or 3,4'-,
-3,3 '-, 2,4'-, 2,2 '-) diaminodiphenylmethane, 4,4'- (or 3,4'-, -3,
3'-, 2,4'-, 2,2'-) diaminodiphenyl sulfone, 4,4'- (or 3,4'-, -3,3 '
-, 2,4 '-, 2,2'-) diaminodiphenyl sulfide, paraphenylenediamine, metaphenylenediamine, p-xylylenediamine, m-xylylenediamine, o-tolidine, o-tolidinesulfone, 4,4 '-
Methylene-bis (2,6-diethylaniline), 4,
4'-methylene-bis- (2,6-diisopropylaniline), 2,4-diaminomesitylene, 1,5-diaminonaphthalene, 4,4'-benzophenonediamine, bis [4- (4'-aminophenoxy) phenyl Sulfone, 1,1,1,3,3,3-hexafluoro-2,2
-Bis (4-aminophenyl) propane, 2,2-bis [4- (4'-aminophenoxy) phenyl] propane, 3,3'-dimethyl-4,4'-diaminodiphenylmethane, 3,3 ', 5 , 5'-Tetramethyl-4,
4'-diaminodiphenylmethane, bis [4- (3'-
[Aminophenoxy) phenyl] sulfone, 2,2-bis (4-aminophenyl) propane and the like, and these can be used alone or in combination of two or more.
【0015】一般式(II)において、R3で示される芳
香環を含まない2価の有機基とは、一般に、テトラカル
ボン酸又はその誘導体と反応してポリイミド前駆体を形
成し得る芳香族以外のジアミン化合物の残基である。こ
こで、芳香環を含まない2価の有機基としては、炭素原
子数が2〜750の直鎖状又は分岐状の炭化水素基、脂
環式炭化水素基を含む炭素原子数が6〜14の炭化水素
基、1つ以上のエーテル結合を介して前記炭化水素基が
連なった基、(ポリ)シロキサン結合を介して前記炭化
水素基が結合した基等が好ましいものとして挙げられ
る。In the general formula (II), the divalent organic group not containing an aromatic ring represented by R 3 is generally other than an aromatic group which can react with tetracarboxylic acid or a derivative thereof to form a polyimide precursor. Is the residue of the diamine compound. Here, as the divalent organic group containing no aromatic ring, a linear or branched hydrocarbon group having 2 to 750 carbon atoms, or a carbon atom having 6 to 14 carbon atoms including an alicyclic hydrocarbon group is used. A group in which the hydrocarbon group is linked via one or more ether bonds, a group in which the hydrocarbon group is linked via a (poly) siloxane bond, and the like.
【0016】R3で示される基を与えるジアミンとして
は、例えば、エチレンジアミン、プロピレンジアミン、
テトラメチレンジアミン、ヘキサメチレンジアミン、
1,2−ジアミノシクロヘキサン、1,3ージアミノシ
クロヘキサン、1,4ージアミノシクロヘキサン、下記
一般式(VI)Examples of the diamine providing the group represented by R 3 include ethylene diamine, propylene diamine,
Tetramethylene diamine, hexamethylene diamine,
1,2-diaminocyclohexane, 1,3-diaminocyclohexane, 1,4-diaminocyclohexane, the following general formula (VI)
【化12】 (式中、R11及びR12は二価の炭化水素基(好ましくは
炭素数1〜10)を示し、それぞれ同一でも異なってい
てもよく、R13及びR14は一価の炭化水素基(好ましく
は炭素数1〜10)を示し、それぞれ同一でも異なって
いてもよく、mは1以上、好ましくは1〜10の整数で
ある)で表されるジアミノポリシロキサン等の脂肪族ジ
アミン、ポリオキシアルキレンジアミン、例えば、下記
一般式(VII)Embedded image (Wherein, R 11 and R 12 each represent a divalent hydrocarbon group (preferably having 1 to 10 carbon atoms), which may be the same or different, and R 13 and R 14 represent a monovalent hydrocarbon group ( Preferably represents 1 to 10 carbon atoms, and may be the same or different, and m is 1 or more, preferably an integer of 1 to 10), such as an aliphatic diamine such as diaminopolysiloxane, Alkylenediamine, for example, the following general formula (VII)
【化13】 (式中、R5は−CHR8−CH2−、−CH2−CH2−
又は−CH2−CHR8−を示し、a、b及びcは式中に
おける繰り返し単位の数を意味し、a及びbは0又は正
の整数、cは正の整数であり、R6、R7及びR8は炭素
数1〜3のアルキル基である)で示されるものが好まし
いものとして挙げられる。Embedded image (Wherein, R 5 is -CHR 8 -CH 2 -, - CH 2 -CH 2 -
Or -CH 2 -CHR 8 - shows a, a, b and c denotes the number of repeating units in the formula, a and b are 0 or a positive integer, c is a positive integer, R 6, R 7 and R 8 are an alkyl group having 1 to 3 carbon atoms).
【0017】なお、明らかなことではあるが、一般式
(VII)において、a、b及びcの繰り返し数は各繰り
返し単位の数を意味するのみであり、この順でブロック
状にそれぞれの繰り返し単位が存在することを意味する
ものではなく、化合物中にそれぞれの繰り返し単位がラ
ンダムな順序に結合しているものも含まれる。aは0〜
20、bは0〜70、cは1〜90の整数であることが
好ましい。It should be noted that, in the general formula (VII), the number of repetitions of a, b and c only means the number of each repetition unit, and the repetition units in a block-like order in this order. Is not meant to be present, but also includes compounds in which each repeating unit is bonded in a random order. a is 0
20, b is preferably an integer of 0 to 70, and c is preferably an integer of 1 to 90.
【0018】前記一般式(VII)で示されるジアミンと
しては、サン テクノケミカル(株)製のジェファーミン
D−230、D−400、D−2000、D−400
0、ED−600、ED−900、ED2001、ED
R−148等の市販品を使用することができる。これら
は単独で又は2種類以上を組み合わせて使用される。こ
れらのうち、前記一般式(VII)で示されるジアミン
は、低温硬化性に優れるので好ましい。Examples of the diamine represented by the general formula (VII) include Jeffamine D-230, D-400, D-2000, and D-400 manufactured by San Techno Chemical Co., Ltd.
0, ED-600, ED-900, ED2001, ED
A commercially available product such as R-148 can be used. These are used alone or in combination of two or more. Among them, the diamine represented by the general formula (VII) is preferable because it has excellent low-temperature curability.
【0019】本発明のポリイミド前駆体において、一般
式(III)で示される末端は、アミンとして、前記一般
式(IV)で表されるアミノベンズイミダゾールを用いる
ことにより形成されるものであり、本発明のポリイミド
前駆体の一部又は全部の分子において存在すればよい。
ポリイミド前駆体において、一般式(III)で示される
末端は、片方に存在しても両方に存在してもよい。一般
式(IV)で表されるアミノベンズイミダゾールとして
は、例えば、2−アミノベンズイミダゾール,2−アミ
ノ−6−メチルベンズイミダゾール,2−アミノ−6−
エチルベンズイミダゾール,2−アミノ−6−ブチルベ
ンズイミダゾール,2−アミノ−6−ニトロベンズイミ
ダゾール等が挙げられる。これらは単独で又は2種類以
上を組み合わせて使用される。In the polyimide precursor of the present invention, the terminal represented by the general formula (III) is formed by using the aminobenzimidazole represented by the general formula (IV) as an amine. It may be present in some or all of the molecules of the polyimide precursor of the invention.
In the polyimide precursor, the terminal represented by the general formula (III) may be present on one side or both sides. As the aminobenzimidazole represented by the general formula (IV), for example, 2-aminobenzimidazole, 2-amino-6-methylbenzimidazole, 2-amino-6-
Ethyl benzimidazole, 2-amino-6-butylbenzimidazole, 2-amino-6-nitrobenzimidazole and the like can be mentioned. These are used alone or in combination of two or more.
【0020】本発明のポリイミド前駆体の製造法におい
て、一般式(I)及び(II)の繰り返し単位の割合並び
に一般式(III)で示される末端の、ポリイミド前駆体
全体中における頻度は、それぞれの一般式を与えるアミ
ンの配合割合により調製できる。本発明の製造法によれ
ば、得られるポリイミド前駆体中には、両末端とも一般
式(III)で示される末端を有しない構造のものも生成
することがあるが、得られるポリイミド前駆体全体中
に、一般式(I)及び(II)の繰り返し単位並びに一般
式(III)で示される末端を有する分子が存在すれば、
それは本発明の範囲に含まれるものである。In the method for producing a polyimide precursor of the present invention, the proportion of the repeating units of the general formulas (I) and (II) and the frequency of the terminal represented by the general formula (III) in the entire polyimide precursor are as follows: Can be prepared by the mixing ratio of the amine giving the general formula of According to the production method of the present invention, in the obtained polyimide precursor, one having a structure having no terminal represented by the general formula (III) at both ends may be formed, In the case where there is a repeating unit of the general formulas (I) and (II) and a molecule having a terminal represented by the general formula (III),
It is within the scope of the present invention.
【0021】一般式(II)で表される繰り返し単位を与
えるジアミンの使用量は、全アミン使用量の1〜90モ
ル%の範囲とすることが好ましく、2〜85モル%の範
囲とすることがより好ましい。この使用量が1モル%未
満では、低温硬化性、密着性が低下する傾向があり、9
0モル%を超えると、耐熱性が低下する傾向がある。一
般式(III)で表される末端を与えるアミノベンズイミ
ダゾールの使用量は、全アミン使用量の0.1〜10モ
ル%の範囲とすることが好ましく、0.2〜8モル%の
範囲とすることがより好ましく、0.5〜5モル%の範
囲とすることがさらに好ましい。この使用量が0.1モ
ル%未満では、密着性、耐湿熱性が低下する傾向があ
り、10モル%を超えると、耐熱性が低下する傾向があ
る。一般式(I)で表される繰り返し単位を与えるジア
ミンの使用量は上記各ジアミンの残部とすればよい。本
発明のポリイミド前駆体においては、全体として上記各
アミンの使用量と同様の割合の各繰り返し単位又は末端
を有することが好ましい。The amount of the diamine used to give the repeating unit represented by the general formula (II) is preferably in the range of 1 to 90 mol%, more preferably in the range of 2 to 85 mol% of the total amount of the amine used. Is more preferred. If the amount is less than 1 mol%, the curability at low temperatures and the adhesiveness tend to decrease.
If it exceeds 0 mol%, the heat resistance tends to decrease. The amount of the aminobenzimidazole that gives a terminal represented by the general formula (III) is preferably in the range of 0.1 to 10 mol%, more preferably in the range of 0.2 to 8 mol% of the total amount of the amine used. More preferably, it is more preferably in the range of 0.5 to 5 mol%. When the amount is less than 0.1 mol%, the adhesiveness and wet heat resistance tend to decrease, and when it exceeds 10 mol%, the heat resistance tends to decrease. The amount of the diamine used to give the repeating unit represented by the general formula (I) may be the balance of each diamine. It is preferable that the polyimide precursor of the present invention has each repeating unit or terminal at the same ratio as the amount of each amine as a whole as a whole.
【0022】本発明のポリイミド前駆体は、場合によ
り、一般式(I)及び(II)の繰り返し単位以外の単位
を有していてもよい。このような繰り返し単位として
は、一般式(I)及び(II)の各繰り返し単位が一部イ
ミド化したもの等が挙げられる。この場合、一般式
(I)及び(II)の繰り返し単位総量は、ポリイミド前
駆体を構成する全繰り返し単位(イミド化した単位等を
含む)に対して、50モル%以上であることが好まし
い。The polyimide precursor of the present invention may optionally have units other than the repeating units of the general formulas (I) and (II). Examples of such a repeating unit include those in which each of the repeating units of the general formulas (I) and (II) is partially imidized. In this case, the total amount of the repeating units of the general formulas (I) and (II) is preferably at least 50 mol% based on all the repeating units (including imidized units and the like) constituting the polyimide precursor.
【0023】一般式(I)及び(II)の繰り返し単位に
おけるXは各々独立にOH又は一価の有機基である。前
記一価の有機基としては、メチル基、エチル基、n−プ
ロピル基、イソプロピル基、n−ブチル基等のアルキル
基、フェニル基等のアリール基、ベンジル基等のアラル
キル基、ビニル基、アリル基等のアルケニル基などの炭
化水素基、アクリロイル基、メタクリロイル基、メタク
リロイルオキシアルキル基、アクリロイルオキシアルキ
ル基、ビニルエーテル基、シンナミル基等の重合性不飽
和二重結合を有する基、グリシジル基、ヒドロキシフェ
ニル基などが、−O−、−NH−等を介して、結合して
いるものが挙げられ、総炭素数が1〜20の一価の有機
基が好ましく、炭素原子数1〜10のものがより好まし
い。X in the repeating units of the general formulas (I) and (II) is each independently OH or a monovalent organic group. Examples of the monovalent organic group include an alkyl group such as a methyl group, an ethyl group, an n-propyl group, an isopropyl group and an n-butyl group, an aryl group such as a phenyl group, an aralkyl group such as a benzyl group, a vinyl group, and an allyl group. Hydrocarbon group such as alkenyl group such as acryloyl group, methacryloyl group, methacryloyloxyalkyl group, acryloyloxyalkyl group, vinyl ether group, group having a polymerizable unsaturated double bond such as cinnamyl group, glycidyl group, hydroxyphenyl Groups and the like are bonded via -O-, -NH- or the like, and a monovalent organic group having a total carbon number of 1 to 20 is preferable, and those having 1 to 10 carbon atoms are preferable. More preferred.
【0024】Xの一部又は全部が、重合性不飽和二重結
合を有する基等の感光基(例えば、光の照射により脱離
する基、光の照射により二量化や共重合しうる基等)で
あると、ポリイミド前駆体自体に感光性を付与すること
ができるため感光性材料に用いる上では好ましく、中で
も前記重合性不飽和二重結合を有する基であると容易に
良好な感光性を付与できるので好ましい。Xの一部を感
光基とする場合、Xの総計に対して10モル%以上が感
光基であることが好ましい。A part or all of X is a photosensitive group such as a group having a polymerizable unsaturated double bond (for example, a group capable of leaving upon irradiation with light, a group capable of dimerizing or copolymerizing upon irradiation with light, etc.) ) Is preferable for use as a photosensitive material because it can impart photosensitivity to the polyimide precursor itself, and among these, a group having a polymerizable unsaturated double bond easily provides good photosensitivity. It is preferable because it can be provided. When a part of X is a photosensitive group, it is preferable that 10 mol% or more of the total X is a photosensitive group.
【0025】重合性不飽和二重結合を有する基として
は、例えば、下記一般式As the group having a polymerizable unsaturated double bond, for example, the following general formula:
【化14】 (但し、R15、R16及びR17は、水素、アルキル基、フ
ェニル基、ビニル基及びプロペニル基からそれぞれ独立
に選択された基であり、R18は2価の有機基を示す)で
表される有機基が高感度の感光性を付与できるため好ま
しい。前記アルキル基としては炭素原子数1〜4のもの
が好ましい。また、R18で示される2価の有機基として
は、メチレン基、エチレン基、プロピレン基等の炭素原
子数1〜4のアルキレン基が好ましい。特に、メタクリ
ロイルオキシアルキル基及びアクリロイルオキシアルキ
ル基(アルキルの炭素数が1〜4のもの)は、高い感度
を実現するのみならず、合成も容易であり本発明の感光
性樹脂組成物に好適である。Embedded image (However, R 15 , R 16 and R 17 are each independently selected from hydrogen, an alkyl group, a phenyl group, a vinyl group and a propenyl group, and R 18 represents a divalent organic group.) The organic group to be used is preferable because it can impart high-sensitivity photosensitivity. The alkyl group preferably has 1 to 4 carbon atoms. The divalent organic group represented by R 18 is preferably an alkylene group having 1 to 4 carbon atoms such as a methylene group, an ethylene group, and a propylene group. In particular, a methacryloyloxyalkyl group and an acryloyloxyalkyl group (having an alkyl having 1 to 4 carbon atoms) not only realize high sensitivity but also are easy to synthesize and are suitable for the photosensitive resin composition of the present invention. is there.
【0026】本発明のポリイミド前駆体は、既に知られ
た各種製造法により得られる。材料としては、前記テト
ラカルボン酸若しくはその無水物等の誘導体、前記各種
ジアミン、必要に応じて、側鎖を構成する原料となるア
ルコール、アミン等が用いられる。一般式(I)及び
(II)においてXがOHである場合は、テトラカルボン
酸無水物とジアミンを必要に応じて用いる有機溶媒中で
反応させることにより得ることができる。またXが一価
の有機基を含む場合で、−O−を介するものの場合は、
テトラカルボン酸二無水物とヒドロキシ基含有化合物を
混合して反応させ、テトラカルボン酸のハーフエステル
を製造した後、塩化チオニルにより酸クロリド化し、次
いで、ジアミンと反応させる方法や、前記テトラカルボ
ン酸ハーフエステルをカルボジイミド類を縮合剤として
ジアミンと反応させる方法等により合成することができ
る。Xが一価の有機基である場合で、−NH−を介する
ものの場合は、テトラカルボン酸無水物とジアミンを必
要に応じて用いる有機溶媒中で反応させ、次いでイソシ
アネート化合物を反応させること等により製造すること
ができる。The polyimide precursor of the present invention can be obtained by various known production methods. As the material, derivatives such as the above-mentioned tetracarboxylic acid or its anhydride, the above-mentioned various diamines, and, if necessary, alcohols and amines as raw materials constituting side chains are used. When X is OH in the general formulas (I) and (II), it can be obtained by reacting a tetracarboxylic anhydride and a diamine in an organic solvent used as required. Further, when X contains a monovalent organic group and is via -O-,
A method in which tetracarboxylic dianhydride and a hydroxy group-containing compound are mixed and reacted to produce a half ester of tetracarboxylic acid, and then acid chloride with thionyl chloride, followed by reaction with a diamine, It can be synthesized by a method of reacting an ester with a diamine using a carbodiimide as a condensing agent. In the case where X is a monovalent organic group, and in the case of via -NH-, by reacting tetracarboxylic anhydride and a diamine in an organic solvent used as required, and then reacting with an isocyanate compound, Can be manufactured.
【0027】本発明のポリイミド前駆体の製造に用いら
れる有機溶媒としては、低温硬化性の点で非含窒素系極
性溶媒が好ましい。非含窒素系極性溶媒としては、例え
ば、シクロヘキサノン、ジメチルスルホキシド、ジエチ
レングリコールジメチルエーテル、トリエチレングリコ
ールジメチルエーテル、γ−ブチロラクトン、スルホラ
ン等が好ましく用いられるが、高揮発性であって低温硬
化性を付与できるγ−ブチロラクトンが最も好ましい。
有機溶媒の使用量は、生成するポリイミド前駆体の1〜
10倍(重量比)とすることが好ましい。1倍未満で
は、合成時の粘度が高すぎて、撹拌不能により合成が困
難となる傾向があり、10倍を超えると、反応速度が低
下する傾向がある。The organic solvent used for producing the polyimide precursor of the present invention is preferably a non-nitrogen-containing polar solvent from the viewpoint of low-temperature curability. As the non-nitrogen-containing polar solvent, for example, cyclohexanone, dimethyl sulfoxide, diethylene glycol dimethyl ether, triethylene glycol dimethyl ether, γ-butyrolactone, sulfolane, and the like are preferably used. Butyrolactone is most preferred.
The amount of the organic solvent used is 1 to 1 of the generated polyimide precursor.
Preferably, it is 10 times (weight ratio). If it is less than 1 time, the viscosity at the time of synthesis tends to be too high and the synthesis tends to be difficult due to inability to stir. If it exceeds 10 times, the reaction rate tends to decrease.
【0028】本発明のポリイミド前駆体としては、重量
平均分子量が、5,000〜200,000であること
が低温硬化性に優れ、耐熱性、機械特性、作業性等にも
優れるので好ましい。分子量は、ゲルパーミエーション
クロマトグラフィ法により測定し、標準ポリスチレン検
量線を用いて換算することにより得られる。The polyimide precursor of the present invention preferably has a weight-average molecular weight of 5,000 to 200,000 because of excellent low-temperature curability and excellent heat resistance, mechanical properties, workability and the like. The molecular weight is measured by a gel permeation chromatography method and is obtained by conversion using a standard polystyrene calibration curve.
【0029】本発明のポリイミドは、前記ポリイミド前
駆体をイミド閉環することにより製造できる。イミド閉
環は、通常、加熱により行うことができる。加熱条件と
しては、特に制限はなく、加熱温度は80〜450℃と
することができるが、本発明の特長の一つである低温硬
化性を活かすため、80〜250℃とすることが好まし
い。この加熱温度が、80℃未満では、閉環反応が遅く
なる傾向があり、450℃を超えると、生成するポリイ
ミドが劣化する傾向がある。また、加熱時間は、10〜
100分とすることが好ましい。この加熱時間が、10
分未満では、閉環反応が充分に進まない傾向があり、1
00分を超えると、生成するポリイミドが劣化する傾向
があり、作業性が低下する傾向がある。The polyimide of the present invention can be produced by imide ring-closure of the polyimide precursor. The imide ring closure can be usually performed by heating. The heating condition is not particularly limited, and the heating temperature can be 80 to 450 ° C. However, the heating temperature is preferably 80 to 250 ° C in order to make use of the low-temperature curability which is one of the features of the present invention. If the heating temperature is lower than 80 ° C., the ring closure reaction tends to be slow, and if it exceeds 450 ° C., the generated polyimide tends to deteriorate. The heating time is 10 to
Preferably, it is 100 minutes. The heating time is 10
If the time is less than 1 minute, the ring-closure reaction does not tend to proceed sufficiently.
If the time exceeds 00 minutes, the produced polyimide tends to deteriorate, and the workability tends to decrease.
【0030】本発明の感光性樹脂組成物は、前記ポリイ
ミド前駆体と感光剤を含有してなる。ポリイミド前駆体
が感光性基を有しないものの場合は、必要に応じて感光
性を付与することができる。前記の感光性を付与する方
法としては、ポリイミド前駆体のカルボキシル基にアミ
ノ基を有するアクリル化合物をイオン結合で導入する方
法、ポリイミド前駆体と反応性モノマー、光酸発生剤及
び光塩基発生剤等の感光性付与剤を混合するなどの既知
の方法が挙げられる。The photosensitive resin composition of the present invention contains the above-mentioned polyimide precursor and a photosensitive agent. When the polyimide precursor does not have a photosensitive group, photosensitivity can be imparted as needed. Examples of the method of imparting the photosensitivity include a method of introducing an acrylic compound having an amino group to a carboxyl group of a polyimide precursor by an ionic bond, a polyimide precursor and a reactive monomer, a photoacid generator and a photobase generator. And a known method such as mixing a photosensitizer.
【0031】前記アミノ基を有するアクリル化合物とし
ては、例えば、N,N−ジメチルアミノエチルメタクリ
レート、N,N−ジエチルアミノエチルメタクリレー
ト、N,N−ジメチルアミノプロピルメタクリレート、
N,N−ジエチルアミノプロピルメタクリレート、N,
N−ジメチルアミノエチルアクリレート、N,N−ジエ
チルアミノエチルアクリレート、N,N−ジメチルアミ
ノプロピルアクリレート、N,N−ジエチルアミノプロ
ピルアクリレート、N,N−ジメチルアミノエチルアク
リルアミド、N,N−ジメチルアミノエチルアクリルア
ミド等が挙げられる。これらは単独で又は2種類以上を
組み合わせて使用することもできる。アミノ基を有する
アクリル化合物の使用量は、ポリイミド前駆体の樹脂分
に対して、1〜200重量%とすることが好ましく、5
〜150重量%とすることがより好ましい。この使用量
が、1重量%未満であると、光感度が劣る傾向があり、
200重量%を超えると、耐熱性、フィルムの機械特性
等が劣る傾向がある。Examples of the acrylic compound having an amino group include N, N-dimethylaminoethyl methacrylate, N, N-diethylaminoethyl methacrylate, N, N-dimethylaminopropyl methacrylate,
N, N-diethylaminopropyl methacrylate, N,
N-dimethylaminoethyl acrylate, N, N-diethylaminoethyl acrylate, N, N-dimethylaminopropyl acrylate, N, N-diethylaminopropyl acrylate, N, N-dimethylaminoethyl acrylamide, N, N-dimethylaminoethyl acrylamide, etc. Is mentioned. These can be used alone or in combination of two or more. The amount of the acrylic compound having an amino group to be used is preferably 1 to 200% by weight based on the resin content of the polyimide precursor, and is preferably 5% by weight.
More preferably, the content is set to 150% by weight. If the amount is less than 1% by weight, the light sensitivity tends to be poor,
If it exceeds 200% by weight, heat resistance and mechanical properties of the film tend to be inferior.
【0032】本発明の感光性樹脂組成物は、必要に応じ
て、付加重合性化合物を用いることができる。付加重合
性化合物としては、例えば、アクリル酸メチル、メタク
リル酸メチル、アクリル酸エチル、メタクリル酸エチ
ル、アクリル酸ブチル、メタクリル酸ブチル、アクリル
酸2−エチルヘキシル、メタクリル酸2−エチルヘキシ
ル、ペンテニルアクリレート、ペンテニルメタクリレー
ト、テトラヒドロフルフリルアクリレート、テトラヒド
ロフルフリルメタクリレート、ジエチレングリコールジ
アクリレート、トリエチレングリコールジアクリレー
ト、テトラエチレングリコールジアクリレート、ジエチ
レングリコールジメタクリレート、トリエチレングリコ
ールジメタクリレート、テトラエチレングリコールジメ
タクリレート、トリメチロールプロパンジアクリレー
ト、トリメチロールプロパントリアクリレート、トリメ
チロールプロパンジメタクリレート、トリメチロールプ
ロパントリメタクリレート、1,4−ブタンジオールジ
アクリレート、1,6−ヘキサンジオールジアクリレー
ト、1,4−ブタンジオールジメタクリレート、1,6
−ヘキサンジオールジメタクリレート、ペンタエリスリ
トールトリアクリレート、ペンタエリスリトールテトラ
アクリレート、ペンタエリスリトールトリメタクリレー
ト、ペンタエリスリトールテトラメタクリレート、スチ
レン、ジビニルベンゼン、4−ビニルトルエン、4−ビ
ニルピリジン、N−ビニルピロリドン、2−ヒドロキシ
エチルアクリレート、2−ヒドロキシエチルメタクリレ
ート、1,3−アクリロイルオキシ−2−ヒドロキシプ
ロパン、1,3−メタクリロイルオキシ−2−ヒドロキ
シプロパン、メチレンビスアクリルアミド、N,N−ジ
メチルアクリルアミド,N−メチロールアクリルアミ
ド、トリス(β−ヒドロキシエチル)イソシアヌレート
のトリアクリレート、トリス(β−ヒドロキシエチル)
イソシアヌレートのトリアクリレート、下記一般式
(X)In the photosensitive resin composition of the present invention, an addition polymerizable compound can be used if necessary. Examples of the addition polymerizable compound include methyl acrylate, methyl methacrylate, ethyl acrylate, ethyl methacrylate, butyl acrylate, butyl methacrylate, 2-ethylhexyl acrylate, 2-ethylhexyl methacrylate, pentenyl acrylate, and pentenyl methacrylate. , Tetrahydrofurfuryl acrylate, tetrahydrofurfuryl methacrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, tetraethylene glycol diacrylate, diethylene glycol dimethacrylate, triethylene glycol dimethacrylate, tetraethylene glycol dimethacrylate, trimethylolpropane diacrylate, tri Methylolpropane triacrylate, trimethylolpropa Dimethacrylate, trimethylolpropane trimethacrylate, 1,4-butanediol diacrylate, 1,6-hexanediol diacrylate, 1,4-butanediol dimethacrylate, 1,6
-Hexanediol dimethacrylate, pentaerythritol triacrylate, pentaerythritol tetraacrylate, pentaerythritol trimethacrylate, pentaerythritol tetramethacrylate, styrene, divinylbenzene, 4-vinyltoluene, 4-vinylpyridine, N-vinylpyrrolidone, 2-hydroxyethyl Acrylate, 2-hydroxyethyl methacrylate, 1,3-acryloyloxy-2-hydroxypropane, 1,3-methacryloyloxy-2-hydroxypropane, methylenebisacrylamide, N, N-dimethylacrylamide, N-methylolacrylamide, tris ( β-hydroxyethyl) isocyanurate triacrylate, tris (β-hydroxyethyl)
Triacrylate of isocyanurate, the following general formula (X)
【化15】 (式中、R19は水素又はメチル基を示し、q及びrは1
以上の整数である)で表される化合物、トリレンジイソ
シアネートと2−ヒドロキシエチル(メタ)アクリル酸
エステルとの反応物やトリメチルヘキサメチレンジイソ
シアネートとシクロヘキサンジメタノールと2−ヒドロ
キシエチル(メタ)アクリル酸エステルとの反応物等の
ウレタン(メタ)アクリレート等が挙げられる。これら
は単独で又は2種類以上を組み合わせて使用することが
できる。Embedded image (Wherein R 19 represents hydrogen or a methyl group, and q and r are 1
Or a reaction product of tolylene diisocyanate with 2-hydroxyethyl (meth) acrylate or trimethylhexamethylene diisocyanate, cyclohexanedimethanol and 2-hydroxyethyl (meth) acrylate. Urethane (meth) acrylate such as a reaction product with These can be used alone or in combination of two or more.
【0033】付加重合性化合物の使用量は、ポリイミド
前駆体の樹脂分に対して、1〜200重量%とすること
が好ましい。この使用量が、1重量%未満では、現像液
への溶解性も含んだ感光特性が劣る傾向があり、200
重量%を超えると、フィルムの機械特性等が劣る傾向が
ある。The amount of the addition polymerizable compound used is preferably 1 to 200% by weight based on the resin content of the polyimide precursor. When the amount is less than 1% by weight, the photosensitive characteristics including solubility in a developing solution tend to be inferior.
If the amount exceeds the weight percentage, the mechanical properties of the film tend to be inferior.
【0034】本発明の感光性樹脂組成物は、感光剤を含
む。ここで、感光剤とは、光開始剤、光酸発生剤、光塩
基発生剤、増感剤等、光の照射による本発明の感光性樹
脂組成物の変化(架橋等による溶解性の低下(ネガ
型)、酸や塩基の発生による溶解性の向上(ポジ型))
を開始したり、助ける働きを示す材料を意味する。感光
剤の使用量は、その種類により様々であるが、一般にポ
リイミド前駆体の樹脂分に対して、0.001〜30重
量%用いられる。The photosensitive resin composition of the present invention contains a photosensitive agent. Here, the term "photosensitizer" refers to a change in the photosensitive resin composition of the present invention due to light irradiation such as a photoinitiator, a photoacid generator, a photobase generator, a sensitizer, etc. Negative type), improvement of solubility by generation of acid or base (positive type))
A material that shows or helps to initiate or help. The amount of the photosensitizer varies depending on the type thereof, but is generally 0.001 to 30% by weight based on the resin content of the polyimide precursor.
【0035】光開始剤としては、例えば、ミヒラーズケ
トン、ベンゾインメチルエーテル、ベンゾインエチルエ
ーテル、ベンゾインイソプロピルエーテル、2−t−ブ
チルアントラキノン、2−エチルアントラキノン、4,
4′−ビス(ジエチルアミノ)ベンゾフェノン、アセト
フェノン、ベンゾフェノン、チオキサントン、2,4−
ジエチルチオキサントン、2,2−ジメトキシ−2−フ
ェニルアセトフェノン、1−ヒドロキシシクロヘキシル
フェニルケトン、2−メチル−〔4−(メチルチオ)フ
ェニル〕−2−モルフォリノ−1−プロパノン、ベンジ
ル、ジフェニルジスルフィド、フェナンスレンキノン、
2−イソプロピルチオキサントン、リボフラビンテトラ
ブチレート、2,6−ビス(p−ジエチルアミノベンザ
ル)−4−メチル−4−アザシクロヘキサノン,N−エ
チル−N−(p−クロロフェニル)グリシン、N−フェ
ニルジエタノールアミン、2−(o−エトキシカルボニ
ル)オキシイミノ−1,3−ジフェニルプロパンジオ
ン、1−フェニル−2−(o−エトキシカルボニル)オ
キシイミノプロパン−1−オン、3,3′,4,4′−
テトラ(t−ブチルパーオキシカルボニル)ベンゾフェ
ノン、3,3−カルボニルビス(7−ジエチルアミノク
マリン)、ビス(シクロペンタジエニル)−ビス−
〔2,6−ジフルオロ−3−(ピリ−1−イル)フェニ
ル〕チタンベンズアントロン、3,3′−ジメトキシ−
4,4′−ジアジドビフェニル、3,5−ビス(4−ジ
エチルアミノベンジリデン)−1−メチル−4−アザシ
クロヘキサノン、4−メチル−7−ジエチルアミノクマ
リン、4,6−ジメチル−7−エチルアミノクマリン、
7−ジエチルアミノ−3−テノニルクマリン、ベンジル
ジメチルケタール、2−ベンジル−2−ジメチルアミノ
−1−(4−モリフォリノフェニル)−ブタン−1−オ
ン、4−ジエチルアミノ安息香酸エチル、1,3−ジフ
ェニルプロパントリオン−2−(o−エトキシカルボニ
ル)オキシム、N−(4−シアノフェニル)グリシン、
1,7−ビス(9−アクリジニル)ヘプタン等が挙げら
れる。これらは単独で又は2種類以上を組み合わせて使
用することもできる。Examples of the photoinitiator include Michler's ketone, benzoin methyl ether, benzoin ethyl ether, benzoin isopropyl ether, 2-t-butylanthraquinone, 2-ethylanthraquinone,
4'-bis (diethylamino) benzophenone, acetophenone, benzophenone, thioxanthone, 2,4-
Diethylthioxanthone, 2,2-dimethoxy-2-phenylacetophenone, 1-hydroxycyclohexyl phenyl ketone, 2-methyl- [4- (methylthio) phenyl] -2-morpholino-1-propanone, benzyl, diphenyl disulfide, phenanthrene Quinone,
2-isopropylthioxanthone, riboflavin tetrabutyrate, 2,6-bis (p-diethylaminobenzal) -4-methyl-4-azacyclohexanone, N-ethyl-N- (p-chlorophenyl) glycine, N-phenyldiethanolamine, 2- (o-ethoxycarbonyl) oxyimino-1,3-diphenylpropanedione, 1-phenyl-2- (o-ethoxycarbonyl) oxyiminopropan-1-one, 3,3 ', 4,4'-
Tetra (t-butylperoxycarbonyl) benzophenone, 3,3-carbonylbis (7-diethylaminocoumarin), bis (cyclopentadienyl) -bis-
[2,6-difluoro-3- (pyr-1-yl) phenyl] titanium benzanthrone, 3,3'-dimethoxy-
4,4'-diazidobiphenyl, 3,5-bis (4-diethylaminobenzylidene) -1-methyl-4-azacyclohexanone, 4-methyl-7-diethylaminocoumarin, 4,6-dimethyl-7-ethylaminocoumarin ,
7-diethylamino-3-thenonylcoumarin, benzyldimethylketal, 2-benzyl-2-dimethylamino-1- (4-morpholinophenyl) -butan-1-one, ethyl 4-diethylaminobenzoate, 1,3 -Diphenylpropanetrione-2- (o-ethoxycarbonyl) oxime, N- (4-cyanophenyl) glycine,
1,7-bis (9-acridinyl) heptane and the like can be mentioned. These can be used alone or in combination of two or more.
【0036】光開始剤の使用量は、ポリイミド前駆体の
樹脂分に対して、0.01〜30重量%とすることが好
ましく、0.05〜10重量%とすることがより好まし
い。この使用量が、0.01重量%未満では、光感度が
劣る傾向があり、30重量%を超えると、フィルムの機
械特性等が劣る傾向がある。The amount of the photoinitiator used is preferably 0.01 to 30% by weight, more preferably 0.05 to 10% by weight, based on the resin content of the polyimide precursor. If the amount is less than 0.01% by weight, the light sensitivity tends to be poor, and if it exceeds 30% by weight, the mechanical properties of the film tend to be inferior.
【0037】また、本発明の感光性樹脂組成物には、感
光剤として、必要に応じて、アジド化合物を含有するこ
とができる。The photosensitive resin composition of the present invention may contain an azide compound as a photosensitive agent, if necessary.
【0038】アジド化合物として、例えば、As the azide compound, for example,
【化16】 Embedded image
【化17】 等が挙げられる。これらは単独で又は2種類以上を組み
合わせて使用することもできる。Embedded image And the like. These can be used alone or in combination of two or more.
【0039】アジド化合物の使用量は、ポリイミド前駆
体の樹脂分に対して、0.01〜30重量%とすること
が好ましい。この使用量が、0.01重量%未満では、
光感度が劣る傾向があり、30重量%を超えると、フィ
ルムの機械特性等が劣る傾向がある。The amount of the azide compound used is preferably 0.01 to 30% by weight based on the resin content of the polyimide precursor. If this amount is less than 0.01% by weight,
Photosensitivity tends to be inferior, and when it exceeds 30% by weight, mechanical properties of the film tend to be inferior.
【0040】また、本発明の感光性樹脂組成物には、保
存時の安定性を高めるために、ラジカル重合禁止剤又は
ラジカル重合抑制剤を含有することができる。ラジカル
重合禁止剤又はラジカル重合抑制剤としては、例えば、
ヒドロキノン、ヒドロキノンモノメチルエーテル、ベン
ゾキノン、ジフェニル−p−ベンゾキノン、ピロガロー
ル、フェノチアジン、レゾルシノール、オルトジニトロ
ベンゼン、パラジニトロベンゼン、メタジニトロベンゼ
ン、フェナントラキノン、N−フェニル−1−ナフチル
アミン、N−フェニル−2−ナフチルアミン、N−フェ
ニル−2−ナフチルアミン、クペロン、フェノチアジ
ン、2,5−トルキノン、タンニン酸、パラベンジルア
ミノフェノール、ニトロソアミン類等が挙げられる。こ
れらは単独で又は2種類以上を組み合わせて使用するこ
とができる。ラジカル重合禁止剤又はラジカル重合抑制
剤の使用量は、ポリイミド前駆体の樹脂分に対して、
0.01〜30重量%とすることが好ましい。この使用
量が、0.01重量%未満では、保存安定性が劣る傾向
があり、30重量%を超えると、光感度及びフィルムの
機械特性等が劣る傾向がある。Further, the photosensitive resin composition of the present invention may contain a radical polymerization inhibitor or a radical polymerization inhibitor in order to enhance the stability during storage. As the radical polymerization inhibitor or the radical polymerization inhibitor, for example,
Hydroquinone, hydroquinone monomethyl ether, benzoquinone, diphenyl-p-benzoquinone, pyrogallol, phenothiazine, resorcinol, orthodinitrobenzene, paradinitrobenzene, metadinitrobenzene, phenanthraquinone, N-phenyl-1-naphthylamine, N-phenyl-2-naphthylamine , N-phenyl-2-naphthylamine, cuperon, phenothiazine, 2,5-toluquinone, tannic acid, parabenzylaminophenol, nitrosamines and the like. These can be used alone or in combination of two or more. The amount of the radical polymerization inhibitor or the radical polymerization inhibitor used is based on the resin component of the polyimide precursor.
The content is preferably 0.01 to 30% by weight. If the amount is less than 0.01% by weight, the storage stability tends to be inferior, and if it exceeds 30% by weight, the photosensitivity and the mechanical properties of the film tend to be inferior.
【0041】本発明の感光性樹脂組成物は、塗布法、浸
漬法、スプレー法、スクリーン印刷法、回転塗布法によ
ってシリコンウェハー、金属基板、セラミック基板、銅
張積層板等の基材上に塗布され、溶剤の大部分を加熱乾
燥することによって粘着性のない塗膜とすることができ
る。この塗膜上に、所望のパターンが描かれたマスクを
通して活性光線又は化学線を照射後、未照射部又は照射
部を適当な現像液で溶解除去することによって、所望の
レリーフパターンを得ることができる。The photosensitive resin composition of the present invention is applied to a substrate such as a silicon wafer, a metal substrate, a ceramic substrate, a copper-clad laminate, by a coating method, a dipping method, a spray method, a screen printing method, and a spin coating method. By heating and drying most of the solvent, a coating film having no tackiness can be obtained. After irradiating an actinic ray or actinic ray on the coating film through a mask on which a desired pattern is drawn, a desired relief pattern can be obtained by dissolving and removing an unirradiated portion or an irradiated portion with an appropriate developer. it can.
【0042】本発明の感光性樹脂組成物に照射する活性
光線又は化学線としては、例えば、超高圧水銀灯を用い
るコンタクト/プロキシミテイ露光機、ミラープロジェ
クション露光機、i−線ステッパ、g−線ステッパ、そ
の他の紫外線、可視光線、X線、電子線等を使用するこ
とができる。現像液としては、例えば、良溶媒(N,N
−ジメチルホルムアミド、N,N−ジメチルアセトアミ
ド、N−メチル−2−ピロリドン等)、前期良溶媒と貧
溶媒(低級アルコール、水、芳香族炭化水素等)との混
合溶媒、塩基性溶液(水酸化テトラメチルアンモニウム
水溶液、トリエタノールアミン水溶液等)、無機アルカ
リ水溶液、溶媒を含む無機アルカリ水溶液等が挙げられ
る。現像後は、必要に応じて、水又は貧溶媒でリンスを
行ない、室温〜100℃前後で乾燥し、パターンを安定
なものとすることが好ましい。さらに、現像後、耐湿熱
性、はんだ耐熱性、耐薬品性等を向上させる目的で、高
圧水銀灯による紫外線照射や、加熱を行うこともでき
る。As the actinic ray or actinic ray for irradiating the photosensitive resin composition of the present invention, for example, a contact / proximity exposure machine using an ultra-high pressure mercury lamp, a mirror projection exposure machine, an i-line stepper, a g-line stepper And other ultraviolet rays, visible rays, X-rays, and electron beams. As the developer, for example, a good solvent (N, N
-Dimethylformamide, N, N-dimethylacetamide, N-methyl-2-pyrrolidone, etc.), a mixed solvent of a good solvent and a poor solvent (lower alcohol, water, aromatic hydrocarbon, etc.), a basic solution (hydroxylation) Aqueous solution of tetramethylammonium, aqueous solution of triethanolamine), aqueous solution of inorganic alkali, aqueous solution of inorganic alkali containing a solvent, and the like. After the development, if necessary, it is preferable to rinse with water or a poor solvent and dry at room temperature to about 100 ° C. to make the pattern stable. Further, after the development, irradiation with ultraviolet light from a high-pressure mercury lamp or heating can be performed for the purpose of improving wet heat resistance, solder heat resistance, chemical resistance, and the like.
【0043】このレリーフパターンを、加熱することに
よってパターン化された高耐熱性ポリイミドの膜を形成
することができる。この時の加熱温度は、80〜450
℃とすることが好ましく、80℃〜250℃とすること
がより好ましい。この加熱温度が、80℃未満又は45
0℃を超えると、ポリイミド膜の機械特性及び熱特性が
低下する傾向がある。また、この時の加熱時間は、0.
05〜10時間とすることが好ましい。この加熱時間
が、0.05時間未満及び10時間を超えると、ポリイ
ミド膜の機械特性及び熱特性が低下する傾向がある。こ
のようにして本発明の感光性樹脂組成物は、各種保護
膜、絶縁膜等に使用することができる。By heating this relief pattern, a patterned high heat-resistant polyimide film can be formed. The heating temperature at this time is 80 to 450
C., and more preferably 80C to 250C. The heating temperature is less than 80 ° C. or 45
If the temperature exceeds 0 ° C., the mechanical properties and thermal properties of the polyimide film tend to decrease. The heating time at this time is 0.1 mm.
It is preferable to set it for 05 to 10 hours. If the heating time is less than 0.05 hours or more than 10 hours, the mechanical properties and thermal properties of the polyimide film tend to decrease. Thus, the photosensitive resin composition of the present invention can be used for various protective films, insulating films, and the like.
【0044】[0044]
【実施例】以下、本発明を実施例により詳細に説明す
る。 実施例1 撹拌機、温度計、窒素導入管及び冷却管を備えた100
mlフラスコに、(B)成分として2,2′−ビス(4−
(4−アミノフェノキシ)フェニル)プロパン3.65
4g(0.0089モル)、(C)成分としてジェファ
ーミン D−2000(サン テクノケミカル(株)製商
品名、ポリオキシアルキレンジアミン、 アミン価1.
0(meq/g)、構造;H2N−CH(CH3)CH2−(OCH
2CH(CH3))n−NH2(nは平均33)2.000g
(0.001モル)、(D)成分として2−アミノベン
ズイミダゾール 0.027g(0.0002モル)及
びγ−ブチロラクトン 50.44gを仕込んだ後、4
5℃に昇温し、43〜50℃に保ちながら、(A)成分
として3,3′,4,4′−ベンゾフェノンテトラカル
ボン酸二無水物 3.222g(0.01モル)を少量
ずつ添加した。添加後、45℃で約5時間反応を続けた
後、室温に冷却して、不揮発分15重量%のポリイミド
前駆体溶液(PI−1)を得た。DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in detail with reference to embodiments. Example 1 100 equipped with a stirrer, thermometer, nitrogen inlet tube and cooling tube
In a ml flask, 2,2'-bis (4-
(4-aminophenoxy) phenyl) propane 3.65
4 g (0.0089 mol), Jeffamine D-2000 (trade name, manufactured by San Techno Chemical Co., Ltd., polyoxyalkylenediamine, amine value 1.
0 (meq / g), the structure; H 2 N-CH (CH 3) CH 2 - (OCH
2 CH (CH 3)) n -NH 2 (n is an average 33) 2.000 g
(0.001 mol), 0.027 g (0.0002 mol) of 2-aminobenzimidazole as the component (D) and 50.44 g of γ-butyrolactone were charged.
The temperature was raised to 5 ° C., and while maintaining the temperature at 43 to 50 ° C., 3.222 g (0.01 mol) of 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride was added little by little as the component (A). did. After the addition, the reaction was continued at 45 ° C. for about 5 hours, and then cooled to room temperature to obtain a polyimide precursor solution (PI-1) having a nonvolatile content of 15% by weight.
【0045】得られたポリイミド前駆体の重量平均分子
量は70,000であった。なお、重量平均分子量は、
ゲル浸透クロマトグラフィー法(GPC、装置は(株)日
立製作所製)を用いて、標準ポリスチレン換算により求
めた。また、得られたポリイミド前駆体を乾燥させたも
のを、KBr法により、赤外吸収スペクトル(日本電子
(株)製、JIR−100型)を測定したところ、いずれ
も、1600cm-1付近にアミド基のC=Oの吸収と、3
300cm-1付近にN−Hの吸収が確認された。The weight average molecular weight of the obtained polyimide precursor was 70,000. The weight average molecular weight is
It was determined by gel permeation chromatography (GPC, apparatus manufactured by Hitachi, Ltd.) in terms of standard polystyrene. The dried polyimide precursor was subjected to an infrared absorption spectrum (JEOL) by the KBr method.
(Manufactured by JIR-100 Co., Ltd.), the absorption of C = O of the amide group near 1600 cm -1 and 3
The absorption of NH was confirmed at around 300 cm -1 .
【0046】実施例2 実施例1と同様のフラスコに、(B)成分として2,
2′−ビス(4−(4−アミノフェノキシ)フェニル)
プロパン 3.736g(0.0091モル)、(C)
成分としてジェファーミン D−2000(サン テク
ノケミカル(株)製商品名、ポリオキシアルキレンジアミ
ン)1.600g(0.0008モル)、(D)成分と
して2−アミノベンズイミダゾール 0.027g
(0.0002モル)及びγ−ブチロラクトン 48.
65gを仕込んだ後、実施例1と全く同様の操作を行
い、不揮発分15重量%のポリイミド前駆体溶液(PI
−2)を得た。得られたポリイミド前駆体の重量平均分
子量は76,000であった。また、得られたポリイミ
ド前駆体を乾燥させたものを、KBr法により、赤外吸
収スペクトル(日本電子(株)製、JIR−100型)を
測定したところ、いずれも、1600cm-1付近にアミド
基のC=Oの吸収と、3300cm-1付近にN−Hの吸収
が確認された。Example 2 In the same flask as in Example 1, 2 was added as the component (B).
2'-bis (4- (4-aminophenoxy) phenyl)
3.736 g (0.0091 mol) of propane, (C)
1.600 g (0.0008 mol) of Jeffamine D-2000 (trade name, manufactured by San Techno Chemical Co., Ltd., polyoxyalkylenediamine) as a component, and 0.027 g of 2-aminobenzimidazole as a component (D)
(0.0002 mol) and γ-butyrolactone
After charging 65 g, the same operation as in Example 1 was performed to obtain a polyimide precursor solution (PI
-2) was obtained. The weight average molecular weight of the obtained polyimide precursor was 76,000. Further, those obtained by drying the obtained polyimide precursor, by KBr method, infrared absorption spectrum (JEOL Co., JIR-100 type) was measured, both, amide around 1600 cm -1 The absorption of C 吸収 O of the group and the absorption of NH at around 3300 cm −1 were confirmed.
【0047】実施例3 実施例1と同様のフラスコに、(B)成分として2,
2′−ビス(4−(4−アミノフェノキシ)フェニル)
プロパン 3.243g(0.0079モル)、(C)
成分としてエチレンジアミン 0.120g(0.00
2モル)、(D)成分として2−アミノベンズイミダゾ
ール 0.027g(0.0002モル)及びγ−ブチ
ロラクトン 38.65gを仕込んだ後、実施例1と全
く同様の操作を行い、不揮発分15重量%のポリイミド
前駆体溶液(PI−3)を得た。得られたポリイミド前
駆体の重量平均分子量は45,000であった。また、
得られたポリイミド前駆体を乾燥させたものを、KBr
法により、赤外吸収スペクトル(日本電子(株)製、JI
R−100型)を測定したところ、いずれも、1600
cm-1付近にアミド基のC=Oの吸収と、3300cm-1付
近にN−Hの吸収が確認された。Example 3 In the same flask as in Example 1, 2 was added as the component (B).
2'-bis (4- (4-aminophenoxy) phenyl)
3.243 g (0.0079 mol) of propane, (C)
0.120 g of ethylenediamine (0.00%
2 mol), 0.027 g (0.0002 mol) of 2-aminobenzimidazole and 38.65 g of γ-butyrolactone as the component (D), and the same operation as in Example 1 was carried out to obtain a nonvolatile matter of 15 wt. % Polyimide precursor solution (PI-3). The weight average molecular weight of the obtained polyimide precursor was 45,000. Also,
The obtained polyimide precursor was dried to obtain KBr.
Infrared absorption spectrum (JEOL Ltd., JI
R-100) were measured.
absorption of C = O of amide group near cm -1, the absorption of N-H were observed at around 3300 cm -1.
【0048】実施例4 実施例3において、エチレンジアミン0.120gをヘ
キサメチレンジアミン0.232g(0.02モル)
に、γ−ブチロラクトン38.85gを38.10gに
した以外は実施例3と全く同様の操作を行い、不揮発分
15%のポリイミド前駆体溶液(PI−4)を得た。得
られたポリイミド前駆体の重量平均分子量は62,00
0であった。また、得られたポリイミド前駆体を乾燥さ
せたものを、KBr法により、赤外吸収スペクトル(日
本電子(株)製、JIR−100型)を測定したところ、
いずれも、1600cm-1付近にアミド基のC=Oの吸収
と、3300cm-1付近にN−Hの吸収が確認された。Example 4 In Example 3, 0.120 g of ethylenediamine was replaced with 0.232 g (0.02 mol) of hexamethylenediamine.
In the same manner as in Example 3 except that 38.85 g of γ-butyrolactone was changed to 38.10 g, a polyimide precursor solution (PI-4) having a nonvolatile content of 15% was obtained. The weight average molecular weight of the obtained polyimide precursor was 62,000.
It was 0. When the obtained polyimide precursor was dried, an infrared absorption spectrum (JIR-100, manufactured by JEOL Ltd.) was measured by the KBr method.
Both the absorption of C = O of amide group near 1600 cm -1, absorption of N-H were observed at around 3300 cm -1.
【0049】比較例1 実施例1と同様のフラスコに、2,2′−ビス(4−
(4−アミノフェノキシ)フェニル)プロパン 4.1
06g(0.01モル)及びγ−ブチロラクトン42.
25gを仕込んだ後、45℃に昇温し、43〜50℃に
保ちながら、3,3′,4,4′−ベンゾフェノンテト
ラカルボン酸二無水物 3.351g(0.0104モ
ル)を少量ずつ添加した。添加後、45℃で約5時間反
応を続けた後、室温に冷却して、不揮発分15重量%の
ポリイミド前駆体溶液(PI−5)を得た。得られたポ
リイミド前駆体の重量平均分子量は84,000であっ
た。また、得られたポリイミド前駆体を乾燥させたもの
を、KBr法により、赤外吸収スペクトル(日本電子
(株)製、JIR−100型)を測定したところ、いずれ
も、1600cm-1付近にアミド基のC=Oの吸収と、3
300cm-1付近にN−Hの吸収が確認された。Comparative Example 1 In the same flask as in Example 1, 2,2'-bis (4-
(4-aminophenoxy) phenyl) propane 4.1
06 g (0.01 mol) and γ-butyrolactone
After charging 25 g, the temperature was raised to 45 ° C., and while maintaining the temperature at 43 to 50 ° C., 3.351 g (0.0104 mol) of 3,3 ′, 4,4′-benzophenonetetracarboxylic dianhydride was added little by little. Was added. After the addition, the reaction was continued at 45 ° C. for about 5 hours, and then cooled to room temperature to obtain a polyimide precursor solution (PI-5) having a nonvolatile content of 15% by weight. The weight average molecular weight of the obtained polyimide precursor was 84,000. The dried polyimide precursor was subjected to an infrared absorption spectrum (JEOL) by the KBr method.
(Manufactured by JIR-100 Co., Ltd.), the absorption of C = O of the amide group near 1600 cm -1 and 3
The absorption of NH was confirmed at around 300 cm -1 .
【0050】比較例2 実施例1と同様のフラスコに、2,2′−ビス(4−
(4−アミノフェノキシ)フェニル)プロパン 3.6
95g(0.009モル)、ジェファーミン D−20
00(サン テクノケミカル(株)製商品名、ポリオキシ
アルキレンジアミン)2.000g(0.001モル)
及びγ−ブチロラクトン 50.53gを仕込んだ後、
45℃に昇温し、43〜50℃に保ちながら、3,
3′,4,4′−ベンゾフェノンテトラカルボン酸二無
水物 3.222g(0.01モル)を少量ずつ添加し
た。添加後、45℃で約5時間反応を続けた後、室温に
冷却して、不揮発分15重量%のポリイミド前駆体溶液
(PI−6)を得た。得られたポリイミド前駆体の重量
平均分子量は78,000であった。また、得られたポ
リイミド前駆体を乾燥させたものを、KBr法により、
赤外吸収スペクトル(日本電子(株)製、JIR−100
型)を測定したところ、いずれも、1600cm-1付近に
アミド基のC=Oの吸収と、3300cm-1付近にN−H
の吸収が確認された。Comparative Example 2 In the same flask as in Example 1, 2,2'-bis (4-
(4-aminophenoxy) phenyl) propane 3.6
95 g (0.009 mol), Jeffamine D-20
2.00 g (0.001 mol) (polyoxyalkylenediamine, trade name, manufactured by San Techno Chemical Co., Ltd.)
And 50.53 g of γ-butyrolactone,
Raise the temperature to 45 ° C and keep it at 43-50 ° C,
3.222 g (0.01 mol) of 3 ', 4,4'-benzophenonetetracarboxylic dianhydride was added little by little. After the addition, the reaction was continued at 45 ° C. for about 5 hours, and then cooled to room temperature to obtain a polyimide precursor solution (PI-6) having a nonvolatile content of 15% by weight. The weight average molecular weight of the obtained polyimide precursor was 78,000. The dried polyimide precursor was obtained by the KBr method.
Infrared absorption spectrum (JIR-100, manufactured by JEOL Ltd.)
Of the amide group at around 1600 cm -1 and N-H at around 3300 cm -1.
Was observed.
【0051】比較例3 実施例1と同様のフラスコに、2,2′−ビス(4−
(4−アミノフェノキシ)フェニル)プロパン 4.0
64g(0.0099モル)、2−アミノベンズイミダ
ゾール 0.027g(0.0002モル)及びγ−ブ
チロラクトン 41.44gを仕込んだ後、45℃に昇
温し、43〜50℃に保ちながら、3,3′,4,4′
−ベンゾフェノンテトラカルボン酸二無水物 3.22
2g(0.01モル)を少量ずつ添加した。添加後、4
5℃で約5時間反応を続けた後、室温に冷却して、不揮
発分15重量%のポリイミド前駆体溶液(PI−7)を
得た。得られたポリイミド前駆体の重量平均分子量は8
0,000であった。また、得られたポリイミド前駆体
を乾燥させたものを、KBr法により、赤外吸収スペク
トル(日本電子(株)製、JIR−100型)を測定した
ところ、いずれも、1600cm-1付近にアミド基のC=
Oの吸収と、3300cm-1付近にN−Hの吸収が確認さ
れた。Comparative Example 3 In the same flask as in Example 1, 2,2'-bis (4-
(4-aminophenoxy) phenyl) propane 4.0
After charging 64 g (0.0099 mol), 0.027 g (0.0002 mol) of 2-aminobenzimidazole and 41.44 g of γ-butyrolactone, the temperature was raised to 45 ° C, and the temperature was kept at 43 to 50 ° C. , 3 ', 4,4'
-Benzophenonetetracarboxylic dianhydride 3.22
2 g (0.01 mol) were added in small portions. After addition, 4
After continuing the reaction at 5 ° C. for about 5 hours, the mixture was cooled to room temperature to obtain a polyimide precursor solution (PI-7) having a nonvolatile content of 15% by weight. The weight average molecular weight of the obtained polyimide precursor is 8
It was 0000. Further, those obtained by drying the obtained polyimide precursor, by KBr method, infrared absorption spectrum (JEOL Co., JIR-100 type) was measured, both, amide around 1600 cm -1 C =
O absorption and N-H absorption were confirmed at around 3300 cm -1 .
【0052】評価 銅箔18μmの銅張積層板(日立化成工業(株)製、MC
L E−679)を、住友スリーエム社製スコッチブラ
イトで研磨した後水洗し、80℃で15分間乾燥した。
この試験基板に、アプリケーターを用いて上記ポリイミ
ド前駆体溶液(PI−1〜PI−7)を均一に塗布し
た。次いで、ホットプレートを用いて、90℃で480
秒間加熱し、約20μmの塗膜を形成した後、乾燥機を
使用して、所定温度で60分間硬化した(空気雰囲気
中)。このようにして得られた試験基板を、平山製作所
製PCT試験装置を用いて、121℃、2.013×1
05Paの条件で300時間までPCT処理を行い、以下
に示す方法で耐PCT性を評価した。耐PCT性は、所
定時間PCT処理した後の密着性を基盤目試験すること
によって、評価した。なお、基盤目試験は、カッタナイ
フで1mmで100個のます目ができるように基盤目状に
傷をつけ、これをJIS規格(JIS K5400)に
準じてセロテープで剥離し、100個のます目に対し
て、残存したます目の個数で表す方法である。評価結果
を表1及び表2に示す。Evaluation Copper-clad laminate of copper foil 18 μm (manufactured by Hitachi Chemical Co., Ltd., MC
LE-679) was polished with Scotch Bright manufactured by Sumitomo 3M Limited, washed with water, and dried at 80 ° C. for 15 minutes.
The polyimide precursor solution (PI-1 to PI-7) was uniformly applied to the test substrate using an applicator. Then, 480 at 90 ° C. using a hot plate.
After heating for 2 seconds to form a coating film of about 20 μm, the coating was cured at a predetermined temperature for 60 minutes using a dryer (in an air atmosphere). The test substrate thus obtained was subjected to a test at 121 ° C. and 2.013 × 1 using a PCT tester manufactured by Hirayama Seisakusho.
0 5 Pa conditions performs PCT treatment up to 300 hours to evaluate PCT resistance by the following methods. The PCT resistance was evaluated by performing a substrate test on the adhesion after the PCT treatment for a predetermined time. In addition, the base grid test was performed by scratching the base grid with a cutter knife so that 100 squares could be formed at 1 mm, peeling it off with cellophane tape in accordance with JIS standard (JIS K5400), and cutting the 100 squares. Is a method of expressing the number of remaining squares. The evaluation results are shown in Tables 1 and 2.
【0053】[0053]
【表1】 [Table 1]
【0054】[0054]
【表2】 [Table 2]
【0055】合成例(光重合性モノマーの合成) 撹拌機、温度計、窒素導入管,滴下ロート及び冷却管を
備えた1リットルフラスコに、トリメチルヘキサメチレ
ンジイソシアネート 210g(1.00モル)及びト
ルエン 137.3gを仕込んだ後、70℃に昇温し、
70〜75℃に保ちながら、シクロヘキサンジメタノー
ル 72g(0.50モル)及び2−ヒドロキシエチル
メタクリレート 130g(1.00モル)を少量ずつ
滴下した。滴下後、70℃で約5時間反応を続けた後、
室温に冷却して光重合性モノマー溶液(M−1)を得
た。Synthesis Example (Synthesis of Photopolymerizable Monomer) In a 1-liter flask equipped with a stirrer, a thermometer, a nitrogen inlet tube, a dropping funnel and a cooling tube, 210 g (1.00 mol) of trimethylhexamethylene diisocyanate and 137 toluene After charging 3 g, the temperature was raised to 70 ° C.
While maintaining the temperature at 70 to 75 ° C, 72 g (0.50 mol) of cyclohexanedimethanol and 130 g (1.00 mol) of 2-hydroxyethyl methacrylate were added dropwise little by little. After dropping, the reaction was continued at 70 ° C for about 5 hours,
After cooling to room temperature, a photopolymerizable monomer solution (M-1) was obtained.
【0056】実施例5〜8、比較例4〜6 撹拌機、冷却管及び温度計を備えたフラスコに、実施例
1〜4及び比較例1〜3で得られたポリイミド前駆体溶
液(PI−1〜PI−7)、合成例1で得られた光重合
性モノマー溶液(M−1)、光開始剤であるベンジルジ
メチルケタール(チバガイギー社製 I−651)及び
ビクトリアピュアブルー(染料)を表3に示す重量比で
配合し、撹拌混合した後、フィルター濾過し、均一な感
光性樹脂組成物溶液(PPI−1〜PPI−7)を得
た。Examples 5 to 8 and Comparative Examples 4 and 6 The polyimide precursor solutions (PI-I) obtained in Examples 1 to 4 and Comparative Examples 1 to 3 were placed in a flask equipped with a stirrer, cooling tube and thermometer. 1 to PI-7), the photopolymerizable monomer solution (M-1) obtained in Synthesis Example 1, benzyl dimethyl ketal (I-651 manufactured by Ciba Geigy) as a photoinitiator, and Victoria Pure Blue (dye). After mixing with stirring at a weight ratio shown in No. 3 and stirring and mixing, the mixture was filtered with a filter to obtain uniform photosensitive resin composition solutions (PPI-1 to PPI-7).
【0057】[0057]
【表3】 [Table 3]
【0058】銅箔18μmの銅張積層板(日立化成工業
(株)製、MCL E−679)を、住友スリーエム社製
スコッチブライトで研磨した後水洗し、80℃で15分
間乾燥した。この試験基板に、アプリケーターを用いて
上記感光性樹脂組成物溶液(PPI−1〜PPI−7)
を均一に塗布した。次いで、ホットプレートを用いて、
90℃で480秒間加熱し、約20μmの塗膜を形成し
た。このようにして得られた感光性樹脂組成物の層を形
成した試験基板について、現像性、保存安定性、はんだ
耐熱性及び耐PCT性を以下の方法で評価した。評価結
果を表4及び表5に示す。A copper-clad laminate of 18 μm copper foil (Hitachi Chemical Industries, Ltd.)
MCL E-679) manufactured by Sumitomo 3M Limited was polished with Scotch Bright, washed with water, and dried at 80 ° C. for 15 minutes. The photosensitive resin composition solution (PPI-1 to PPI-7) was applied to the test substrate using an applicator.
Was applied uniformly. Then, using a hot plate,
Heating was performed at 90 ° C. for 480 seconds to form a coating film of about 20 μm. The test substrate on which the layer of the photosensitive resin composition thus obtained was formed was evaluated for developability, storage stability, solder heat resistance and PCT resistance by the following methods. The evaluation results are shown in Tables 4 and 5.
【0059】(1)現像性 上記で得られた感光性樹脂組成物の層を形成した試験基
板を、ヘプタン酸ジエタノールアミド 5重量%、炭酸
ナトリウム 0.5重量%を含有するアルカリ性水溶液
を用いて、45℃で60秒間スプレー現像した。現像性
は、30倍に拡大して残存する樹脂を目視で評価した。
評価の基準は以下の通りである。 ○:現像性の良好なもの(基板表面上に樹脂が全く残ら
ないもの) ×:現像性の不良なもの(基板表面上に樹脂が少し残る
もの)(1) Developability The test substrate on which the layer of the photosensitive resin composition obtained above was formed was prepared by using an alkaline aqueous solution containing 5% by weight of heptanoic acid diethanolamide and 0.5% by weight of sodium carbonate. At 45 ° C. for 60 seconds. The developability was evaluated by visual observation of the resin remaining after being magnified 30 times.
The evaluation criteria are as follows. :: Good developability (no resin left on substrate surface) ×: Poor developability (residual resin left on substrate surface)
【0060】(2)保存安定性 上記で得られた感光性樹脂組成物を室温(23℃)で1
週間保存した後、(1)と同じ方法で試験基板を作製
し、現像性を評価した。評価の基準は以下の通りであ
る。 ○:保存安定性の良好なもの(基板表面上に樹脂が全く
残らず、現像性の良好なもの) ×:保存安定性の不良なもの(基板表面上に樹脂が少し
でも残り、現像性の不良なもの)(2) Storage stability The photosensitive resin composition obtained above was heated at room temperature (23 ° C.) for 1 hour.
After storing for a week, a test substrate was prepared in the same manner as in (1), and the developability was evaluated. The evaluation criteria are as follows. :: Good storage stability (no resin remains on the substrate surface and good developability) ×: Poor storage stability (a little resin remains on the substrate surface and developability) Bad one)
【0061】(3)はんだ耐熱性 前述の銅厚18μmの銅張積層板(日立化成工業(株)
製、MCL−E−679)を、住友スリーエム社製スコ
ッチブライトで研磨した後水洗し、80℃で15分間乾
燥した。この試験基板に、アプリケーターを用いて上記
感光性樹脂組成物溶液(PPI−1〜PPI−7)を均
一に塗布した。次いで、ホットプレートを用いて、90
℃で480秒間加熱し、約20μmの塗膜を形成した。
次に、ネガマスクを感光性樹脂組成物の層の上から密着
させ、オーク製作所製、HMW−680型露光機を使用
し、500mJ/cm2の露光量で露光した。次いで、ネガマ
スクを剥離した後、現像液にヘプタン酸ジエタノールア
ミド 5重量%、炭酸ナトリウム 0.5重量%を含有
するアルカリ性水溶液を用いて、45℃で60秒間スプ
レー現像した。現像後、80℃で10分間加熱乾燥し、
東芝電材(株)製紫外線照射装置を用いて3J/cm2の量で
紫外線を再照射し、その後、さらに乾燥機中200℃で
60分間加熱した(空気雰囲気中)。このようにして得
られた試験基板表面に、ロジン系フラックスA−226
(タムラ化研(株)製)を塗布し、260℃のはんだ浴に
180秒間浸漬し、その後、25℃のトリクレンに20
秒間浸漬してフラックスを除去した。このような操作を
行った後、感光性樹脂組成物層の外観を評価した。評価
基準は次の通りである。 ○:はんだ耐熱性が良好なもの(感光性樹脂組成物層に
クラックや浮き、ハガレの発生が全くないもの) ×:はんだ耐熱性が不良なもの(感光性樹脂組成物層に
クラックや浮き、ハガレの発生するもの)(3) Solder heat resistance The above-mentioned copper-clad laminate having a copper thickness of 18 μm (Hitachi Chemical Industry Co., Ltd.)
MCL-E-679) was polished with Scotch Bright manufactured by Sumitomo 3M Limited, washed with water, and dried at 80 ° C. for 15 minutes. The photosensitive resin composition solution (PPI-1 to PPI-7) was uniformly applied to the test substrate using an applicator. Then, using a hot plate, 90
Heating was performed at 480 ° C. for 480 seconds to form a coating film of about 20 μm.
Next, a negative mask was brought into close contact with the photosensitive resin composition layer, and exposed with an exposure amount of 500 mJ / cm 2 using an HMW-680 type exposure machine manufactured by Oak Manufacturing Co., Ltd. Next, after the negative mask was removed, spray development was performed at 45 ° C. for 60 seconds using an alkaline aqueous solution containing 5% by weight of heptanoic acid diethanolamide and 0.5% by weight of sodium carbonate as a developer. After development, heat and dry at 80 ° C. for 10 minutes,
Ultraviolet irradiation was performed again at an amount of 3 J / cm 2 using an ultraviolet irradiation apparatus manufactured by Toshiba Electric Materials Co., Ltd., and then further heated at 200 ° C. for 60 minutes in a dryer (in an air atmosphere). The rosin-based flux A-226 was applied to the surface of the test substrate thus obtained.
(Manufactured by Tamura Kaken Co., Ltd.), immersed in a solder bath at 260 ° C. for 180 seconds,
The flux was removed by immersion for 2 seconds. After performing such an operation, the appearance of the photosensitive resin composition layer was evaluated. The evaluation criteria are as follows. :: Good solder heat resistance (no cracks or floating in the photosensitive resin composition layer, no peeling) ×: Poor solder heat resistance (cracks or floating in the photosensitive resin composition layer, What causes peeling)
【0062】(4)耐PCT性 前述の銅厚18μmの銅張積層板(日立化成工業(株)
製、MCL−E−679)を住友スリーエム社製スコッ
チブライトで研磨した後水洗し、80℃で15分間乾燥
した。この試験基板に、アプリケーターを用いて上記感
光性樹脂組成物溶液(PPI−1〜PPI−7)を均一
に塗布した。次いで、ホットプレートを用いて、90℃
で480秒間加熱し、約20μmの塗膜を形成した。次
に、オーク製作所製、HMW−680型露光機を使用
し、500mJ/cm2の露光量で露光した後、東芝電材社製
紫外線照射装置を用いて3J/cm2の量で再照射した。そ
の後、さらに乾燥機中所定温度で60分間加熱した(空
気雰囲気中)。このようにして得られた試験基板を、平
山製作所製PCT試験装置を用いて、121℃、2.0
13×105Paの条件で300時間までPCT処理を行
い、以下に示す方法で耐PCT性を評価した。耐PCT
性は、所定時間PCT処理した後の密着性を基盤目試験
することによって、評価した。なお、基盤目試験は、カ
ッタナイフで1mmで100個のます目ができるように基
盤目状に傷をつけ、これをJIS規格(JIS K54
00)に準じてセロテープで剥離し、100個のます目
に対して、残存したます目の個数で表す方法である。(4) PCT resistance The above-mentioned copper-clad laminate having a copper thickness of 18 μm (Hitachi Chemical Industry Co., Ltd.)
MCL-E-679) was polished with Scotch Bright manufactured by Sumitomo 3M Limited, washed with water, and dried at 80 ° C. for 15 minutes. The photosensitive resin composition solution (PPI-1 to PPI-7) was uniformly applied to the test substrate using an applicator. Then, using a hot plate, 90 ° C
For 480 seconds to form a coating film of about 20 μm. Next, exposure was performed at an exposure of 500 mJ / cm 2 using an HMW-680 type exposure machine manufactured by Oak Manufacturing Co., Ltd., and then re-irradiated at an amount of 3 J / cm 2 using an ultraviolet irradiation apparatus manufactured by Toshiba Electric Materials Co., Ltd. Then, it was further heated in a dryer at a predetermined temperature for 60 minutes (in an air atmosphere). The test substrate thus obtained was subjected to a test at 121 ° C. and 2.0 ° C. using a PCT tester manufactured by Hirayama Seisakusho.
PCT treatment was performed for up to 300 hours under the condition of 13 × 10 5 Pa, and the PCT resistance was evaluated by the following method. PCT resistance
The property was evaluated by performing a substrate test on the adhesion after the PCT treatment for a predetermined time. In addition, in the base grid test, the base grid was scratched with a cutter knife so that 100 squares could be formed at 1 mm, and this was cut in accordance with the JIS standard (JIS K54).
This is a method of peeling off with cellophane tape in accordance with (00) and expressing the number of remaining squares for 100 squares.
【0063】[0063]
【表4】 [Table 4]
【0064】[0064]
【表5】 [Table 5]
【0065】[0065]
【発明の効果】請求項1及び2記載のポリイミド前駆体
は、低温硬化性に優れ、耐熱性、耐湿性、密着性等に優
れるポリイミドを与える。請求項3〜7記載のポリイミ
ド前駆体の製造法によれば、低温硬化性に優れ、耐熱
性、耐湿性、密着性等に優れるポリイミドを与えるポリ
イミド前駆体を容易に製造し得る。請求項8記載のポリ
イミドは、優れた耐熱性、耐湿性、密着性等を有する。
請求項9記載のポリイミドの製造法によれば、優れた耐
熱性、耐湿性、密着性等を有するポリイミドを容易に製
造できる。請求項10記載の感光性樹脂組成物は、低温
硬化性に優れ、耐熱性、耐湿性、密着性等に優れるポリ
イミド膜を与え、現像性、保存安定性にも優れる。The polyimide precursor according to claims 1 and 2 gives a polyimide which is excellent in low-temperature curability, heat resistance, moisture resistance and adhesion. According to the method for producing a polyimide precursor according to claims 3 to 7, a polyimide precursor which gives a polyimide excellent in low-temperature curability and excellent in heat resistance, moisture resistance, adhesion and the like can be easily produced. The polyimide according to claim 8 has excellent heat resistance, moisture resistance, adhesion, and the like.
According to the method for producing a polyimide according to the ninth aspect, a polyimide having excellent heat resistance, moisture resistance, adhesion, and the like can be easily produced. The photosensitive resin composition according to the tenth aspect provides a polyimide film having excellent low-temperature curability, excellent heat resistance, excellent moisture resistance, good adhesion, and the like, and excellent excellent developability and storage stability.
Claims (10)
個の芳香環を含む2価の有機基を示し、Xはそれぞれ独
立にOH又は1価の有機基を示す)で表される繰り返し
単位、一般式(II) 【化2】 (式中、R1は4価の有機基を示し、R3は芳香環を含ま
ない2価の有機基を示し、Xはそれぞれ独立にOH又は
1価の有機基を示す)で表される繰り返し単位を有し、
さらに一部又は全部の分子が一般式(III) 【化3】 (式中、R4はハロゲン、ニトロ基又は炭素数1〜9の
アルキル基を示し、nは0〜4の整数である)で表され
る末端を片方又は両方に有してなるポリイミド前駆体。1. A compound of the general formula (I) (Wherein, R 1 represents a tetravalent organic group, and R 2 has at least 1
X represents a divalent organic group containing two aromatic rings, and X independently represents OH or a monovalent organic group), and a repeating unit represented by the general formula (II): (Wherein, R 1 represents a tetravalent organic group, R 3 represents a divalent organic group not containing an aromatic ring, and X each independently represents OH or a monovalent organic group). Having a repeating unit,
Further, some or all of the molecules are represented by the general formula (III): (Wherein, R 4 represents a halogen, a nitro group or an alkyl group having 1 to 9 carbon atoms, and n is an integer of 0 to 4). .
おけるR3で表される2価の有機基が、 【化4】 (式中、R5は−CHR8−CH2−、−CH2−CH2−
又は−CH2−CHR8−を示し、a、b及びcは式中に
おける繰り返し単位の数を意味し、a及びbは0又は正
の整数、cは正の整数であり、R6、R7及びR8は炭素
数1〜3のアルキル基である)である請求項1記載のポ
リイミド前駆体。2. The divalent organic group represented by R 3 in the repeating unit represented by the general formula (II) is represented by the following formula: (Wherein, R 5 is -CHR 8 -CH 2 -, - CH 2 -CH 2 -
Or -CH 2 -CHR 8 - shows a, a, b and c denotes the number of repeating units in the formula, a and b are 0 or a positive integer, c is a positive integer, R 6, R 7 and R 8 are an alkyl group having 1 to 3 carbon atoms).
の誘導体、(B)少なくとも1個の芳香環を含むジアミ
ン、(C)芳香環を含まないジアミン及び(D)一般式
(IV) 【化5】 (式中、nは0〜4の整数であり、R4はハロゲン、ニ
トロ基又は炭素数1〜9のアルキル基を示す)で表され
るアミノベンズイミダゾールを反応させることを特徴と
するポリイミド前駆体の製造法。3. A tetracarboxylic dianhydride or a derivative thereof, (B) a diamine containing at least one aromatic ring, (C) a diamine containing no aromatic ring, and (D) a general formula (IV) Formula 5 Wherein n is an integer of 0 to 4 and R 4 represents a halogen, a nitro group or an alkyl group having 1 to 9 carbon atoms, wherein the aminobenzimidazole represented by the following formula is reacted: How to make the body.
項3記載のポリイミド前駆体の製造法。4. The method for producing a polyimide precursor according to claim 3, wherein the reaction is carried out in a non-nitrogen-containing polar solvent.
量が、全アミン使用量の1〜90モル%である請求項3
又は4記載のポリイミド前駆体の製造法。5. The use amount of the diamine containing no aromatic ring (C) is 1 to 90 mol% of the total amine use amount.
Or the method for producing a polyimide precursor according to 4.
ンズイミダゾールの使用量が、全アミン使用量の0.1
〜10モル%である請求項1又は3記載のポリイミド前
駆体の製造法。(D) The amount of aminobenzimidazole represented by the general formula (IV) is 0.1% of the total amount of amine used.
The method for producing a polyimide precursor according to claim 1 or 3, wherein the amount is 10 to 10 mol%.
ンである請求項4記載のポリイミド前駆体の製造法。7. The method for producing a polyimide precursor according to claim 4, wherein the non-nitrogen-containing polar solvent is γ-butyrolactone.
駆体又は請求項3、4、5、6若しくは7記載の製造法
により得られるポリイミド前駆体をイミド閉環させてな
るポリイミド。8. A polyimide obtained by imide-closing the polyimide precursor according to claim 1 or 2, or the polyimide precursor obtained by the production method according to claim 3, 4, 5, 6, or 7.
駆体又は請求項3、4、5、6若しくは7記載の製造法
により得られるポリイミド前駆体をイミド閉環させるこ
とを特徴とするポリイミドの製造法。9. A method for producing a polyimide, comprising subjecting the polyimide precursor according to claim 1 or 2 or the polyimide precursor obtained by the method according to claim 3, 4, 5, 6, or 7 to imide ring closure. .
前駆体又は請求項3、4、5、6若しくは7記載の製造
法により得られるポリイミド前駆体及び感光剤を含有し
てなる感光性樹脂組成物。10. A photosensitive resin composition comprising the polyimide precursor according to claim 1 or 2, or the polyimide precursor obtained by the production method according to claim 3, 4, 5, 6, or 7, and a photosensitive agent. .
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9300601A JPH11130858A (en) | 1997-10-31 | 1997-10-31 | Polyimide, its precursor, their production and photosensitive resin composition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP9300601A JPH11130858A (en) | 1997-10-31 | 1997-10-31 | Polyimide, its precursor, their production and photosensitive resin composition |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH11130858A true JPH11130858A (en) | 1999-05-18 |
Family
ID=17886817
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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JP9300601A Pending JPH11130858A (en) | 1997-10-31 | 1997-10-31 | Polyimide, its precursor, their production and photosensitive resin composition |
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Country | Link |
---|---|
JP (1) | JPH11130858A (en) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2005326579A (en) * | 2004-05-13 | 2005-11-24 | Toyobo Co Ltd | Negative photosensitive polyimide precursor composition |
JP2006323193A (en) * | 2005-05-19 | 2006-11-30 | Kaneka Corp | Photosensitive resin composition and its use |
WO2008013210A1 (en) * | 2006-07-25 | 2008-01-31 | Ube Industries, Ltd. | Terminally modified hyperbranched polyimide, metal-plated terminally modified hyperbranched polyimide, and method for producing the same |
US7851124B2 (en) * | 2003-06-03 | 2010-12-14 | Mitsui Chemicals, Inc. | Composition for forming wiring protective film and uses thereof |
JP2011153325A (en) * | 2004-10-19 | 2011-08-11 | Nitto Denko Corp | Heat resistant resin preferable as substrate for dust removal |
JPWO2020189358A1 (en) * | 2019-03-15 | 2020-09-24 |
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1997
- 1997-10-31 JP JP9300601A patent/JPH11130858A/en active Pending
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Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7851124B2 (en) * | 2003-06-03 | 2010-12-14 | Mitsui Chemicals, Inc. | Composition for forming wiring protective film and uses thereof |
JP2005326579A (en) * | 2004-05-13 | 2005-11-24 | Toyobo Co Ltd | Negative photosensitive polyimide precursor composition |
JP2011153325A (en) * | 2004-10-19 | 2011-08-11 | Nitto Denko Corp | Heat resistant resin preferable as substrate for dust removal |
JP2006323193A (en) * | 2005-05-19 | 2006-11-30 | Kaneka Corp | Photosensitive resin composition and its use |
WO2008013210A1 (en) * | 2006-07-25 | 2008-01-31 | Ube Industries, Ltd. | Terminally modified hyperbranched polyimide, metal-plated terminally modified hyperbranched polyimide, and method for producing the same |
US8093349B2 (en) | 2006-07-25 | 2012-01-10 | Ube Industries, Ltd. | Terminally modified polybranched polyimide, metal-plated terminally modified polybranched polyimide, and method for producing the same |
JP5359273B2 (en) * | 2006-07-25 | 2013-12-04 | 宇部興産株式会社 | Terminal-modified multi-branched polyimide, metal plating-coated terminal-modified multi-branched polyimide, and production methods thereof |
JPWO2020189358A1 (en) * | 2019-03-15 | 2020-09-24 | ||
WO2020189358A1 (en) * | 2019-03-15 | 2020-09-24 | 富士フイルム株式会社 | Curable resin composition, cured film, layered body, cured film production method, semiconductor device, and polymer precursor |
CN113574091A (en) * | 2019-03-15 | 2021-10-29 | 富士胶片株式会社 | Curable resin composition, cured film, laminate, method for producing cured film, semiconductor device, and polymer precursor |
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