JPH10303333A - Package for high frequency - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package capable of connecting the signals of a high frequency with less characteristic degradation with an element for the high frequency composed of a coplanar line structure with low loss and transmitting them. SOLUTION: A package is provided with a dielectric substrate 2 composed of a dielectric material, a cavity 4 formed by the dielectric substrate 2 and a lid body 3 for housing an element 5 for the high frequency, at least ground layers 14 and 10 provided inside the dielectric substrate 2, a coplanar line 9 with the ground formed on the surface of the dielectric substrate 2 inside the cavity 4 and connected with the element 5 for the high frequency and a microstrip line 18 formed on the surface other than the area of the cavity 4 of the dielectric substrate 2. In this case, the coplanar line 9 with the ground is connected with a strip line 13 formed inside the dielectric substrate 2 through a conversion part 12, and the strip line 13 is electromagnetically coupled with the microstrip line 18 through a slot hole 19 formed at the ground layer 10.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high frequency device (M
More specifically, the present invention relates to a high-frequency package for accommodating an IC, an MMIC, etc., and more particularly, to an improvement of a high-frequency package capable of reducing a characteristic deterioration of a high-frequency signal and transmitting a signal between the high-frequency element and an external electric circuit board. It is about.

[0002]

2. Description of the Related Art Conventionally, in a semiconductor device handling microwaves or millimeter waves, as shown in FIGS. 8 (a) and 8 (b), a cavity 42 formed by a dielectric substrate 40 made of a dielectric material and a lid 41 is provided. The high-frequency element 43 is mounted and hermetically sealed. The input and output of the high-frequency signal and the mounting on the external electric circuit board are performed as shown in FIG.
A signal transmission line 44, such as a strip line, connected to the high-frequency semiconductor element 43 by a wire bonding ribbon or the like passes through the wall 45 and is drawn out of the cavity 42, and is further disposed on the bottom surface via the side surface of the substrate. The installed package is proposed in Japanese Patent Application Laid-Open No. 61-168939, and a signal transmission line 46 is formed on the bottom surface of the insulating substrate 40 as shown in FIG. Are also proposed through a through hole 47. In these semiconductor devices, the transmission line 46 is usually connected to a wiring layer of an external electric circuit board by soldering or the like.

[0003] The input / output terminal structure of a high-frequency element housed in a package is generally a high-frequency element having a coplanar line structure having ground terminals on both sides of a signal terminal in order to handle high-frequency signals. .

[0004]

However, FIG.
In the case of the package (a), when the transmission line 44 passes through the wall 45, the signal line is converted from the microstrip line to the strip line at the wall passing portion, so that the signal line width needs to be reduced. . As a result, there is a problem that reflection loss and radiation loss are apt to occur in the passing portion, so that the characteristics of the high-frequency signal tend to deteriorate. Further, when the semiconductor device having the above configuration is mounted on an external electric circuit board, the transmission line 44 of the semiconductor device and the wiring layer of the external electric circuit board are connected by metal wires or ribbons. However, there has been a problem in cost reduction. In addition, since the transmission line 44 is bent on the side surface of the substrate, when the transmission line 44 is used in the millimeter wave band, the transmission line is bent to increase the reflection, making it difficult to transmit and receive signals. Further, since the transmission line is formed on the side surface of the element mounting surface, the semiconductor device itself is inevitably large, and thus it is difficult to reduce the size of the circuit board.

On the other hand, in FIG. 8 (b), since the line itself is not bent without passing through the wall by the through hole 47, the characteristic deterioration of the signal is small, but the operating frequency of the signal to be transmitted is low. When the frequency is 10 GHz or more, the transmission loss in the through-hole 47 rapidly increases, so that it is difficult to transmit a signal in a microwave band to a millimeter wave band without deterioration in characteristics.

Further, the present inventors have first formed a microstrip line connected to a high-frequency element in a cavity, formed a microstrip line outside the cavity, and electromagnetically coupled them. Has proposed a high-frequency package that reduces the loss when passing through a dielectric substrate and can be surface-mounted on an external electric circuit board, but electromagnetic waves leaking from microstrip lines and line terminations are provided in the cavity. There is a possibility of giving noise to the power supply signal line and the low-frequency transmission line and causing a resonance phenomenon, and it is necessary to consider a structure that does not have these disturbances. In addition, the above proposal has a problem that it is difficult to apply when the input / output terminal structure of the high-frequency element has a coplanar line structure.

[0007]

Means for Solving the Problems The present inventors have developed a high-frequency package having a wiring structure that does not deteriorate signal characteristics and does not interfere with a power supply signal line or a low-frequency signal line. As a result of repeated studies on the structure of a high-frequency package that can be connected to a high-frequency semiconductor element formed with a coplanar line structure, the input / output terminals of the high-frequency element were connected to a grounded coplanar line, The line for connecting to the electric circuit board is configured by a microstrip line, and after converting this coplanar line with ground to a strip line,
The inventors have found that the above object can be achieved by connecting the stripline and the microstrip line by electromagnetic coupling, and have reached the present invention.

That is, a high-frequency package according to the present invention comprises: a dielectric substrate made of a dielectric material; a cavity formed by the dielectric substrate and the lid for accommodating a high-frequency element; At least one ground layer provided, a coplanar line with ground formed on the surface of the dielectric substrate in the cavity and connected to the high-frequency element, and a dielectric other than the cavity region of the dielectric substrate A microstrip line formed on the substrate surface, the grounded coplanar line is connected to a strip line formed in the dielectric substrate via a conversion unit, and the strip line is connected to the It is characterized by being electromagnetically coupled to a microstrip line.

At least one via hole is formed near the open end of the end of the strip line, and the end is provided in the dielectric substrate and the end of the microstrip line. The antenna is characterized by being electromagnetically coupled by being arranged at a position facing each other via a slot hole formed in the ground layer.

[0010] Further, the coplanar line with ground is connected to the high-frequency element in a coplanar line structure, and the conversion section includes a coplanar line including a signal line and a pair of ground layers formed on both sides thereof. A coplanar line with upper and lower grounds having ground layers formed on the upper and lower surfaces of the coplanar line, the length of which is less than 未 満 of the wavelength λ of the transmission signal;
Further, in the converter, the ground layers on both sides of the signal line are electrically connected to ground layers formed on the upper and lower surfaces by via holes and / or castellations. .

According to the high-frequency package of the present invention, the coplanar line with the ground electrically connected to the high-frequency element in the cavity and the microstrip line formed outside the cavity are electromagnetically connected in the dielectric substrate. Transmission, as in the conventional case, transmission due to reflection loss, radiation loss, transmission loss, etc., when the transmission line is penetrated through the side wall or led out of the cavity out of the cavity by means such as through holes and via holes. Loss can be reduced.

Further, as an electromagnetic coupling structure, a slot hole is formed in a ground layer provided in a dielectric substrate, and a strip line and a termination layer of a microstrip line are formed in a ground layer interposed between the lines. By forming them at positions facing each other via the slotted holes and performing electromagnetic coupling, signal loss between the transmission lines is small and signals can be transmitted.

Further, by using a coplanar line with a ground as a transmission line in the cavity, the reflection loss of a high frequency semiconductor element having a coplanar line structure is lower than that of a high frequency package including a microstrip line. It is possible to reduce the number of connections, and because the ground layer is formed on both sides of the signal line, there is no leakage of electromagnetic waves, and as a result, there is the danger of interfering with the power supply signal line and low-frequency signal line Can be avoided.

Further, by converting the coplanar line with ground in the cavity into a strip line in the dielectric substrate, the radiation from these high-frequency transmission lines is reduced, and the power line and the low-frequency signal line are reduced. The risk of interference is also avoided.

[0015]

FIG. 1 shows an embodiment of a high-frequency package according to the present invention. The high-frequency package shown in FIG. 1 is provided with a transmission line directly connectable to an external electric circuit board on a back surface thereof, and relates to a package which can be surface-mounted on the external electric circuit board. According to FIG. 1, a high-frequency package 1 includes a dielectric substrate 2 made of a dielectric material.
The cover 3 forms a cavity 4, in which a high-frequency element 5 such as MMIC or MIC is mounted and housed, and hermetically sealed.

The dielectric material constituting the dielectric substrate 2 is desirably made of a material having a low dielectric loss in order to enhance the transmission efficiency of a high-frequency signal. In particular, the dielectric material has a dielectric constant of 20 or less and a dielectric loss of 30 or less. × 10 ^-4 or less (measurement frequency 6
(0 GHz) ceramics, glass ceramics, ceramic metal composite materials, glass organic resin composite materials, and the like.

The cover 3 is made of a material capable of preventing the electromagnetic wave from the cavity 4 from leaking to the outside. Ceramics, ceramic-metal composite materials, glass ceramics, metals and the like can be used. It is also possible to disperse an electromagnetic wave absorbing substance such as carbon capable of absorbing the electromagnetic wave, or to apply these electromagnetic wave absorbing substances to the surface of the lid.

The high-frequency package shown in FIG. 1 is basically composed of four layers A, B, C and D as wiring layers. FIG. 2A is a wiring diagram of the wiring layer A, and FIG.
FIG. 2C is a wiring diagram of the wiring layer C, and FIG.
FIG. 2D is a wiring diagram of the wiring layer D.

According to the present invention, as shown in FIG. 2B, the dielectric substrate 1 in the cavity 4 serves as a line for transmitting a signal to the high frequency element 5 in the cavity 4 of the package. A coplanar line 9 is formed on the surface as a wiring layer B by a transmission line 7 and ground layers 8 formed on both sides thereof. A ground layer 10 is formed on substantially the entire surface of the wiring layer C under the coplanar line 9, and the coplanar line 9 forms a coplanar line with ground by the ground layer 10.

The wiring layer B includes a high-frequency element 5
A power signal line 11 for supplying power to the power supply is formed. The coplanar line 9 and the power supply signal line 1
1 has one end for a high-frequency element 5, a ribbon, a wire, and a TA.
They are electrically connected by B (Tape Automated Bonding) or the like.

In FIG. 2B, a region surrounded by a dotted line is a region exposed in the cavity 4, and other regions are disposed inside the dielectric substrate 2 as shown in FIG. Is what is done. The coplanar line 9 formed on the surface of the dielectric substrate 2 in the cavity 4 is connected to the strip line 13 via the converter 12 provided inside the dielectric substrate 2. This strip line 13 has a signal line
It has a structure sandwiched from above and below by a ground layer 14 formed on an upper wiring layer A and a ground layer 10 formed on a lower wiring layer C therebelow.

As shown in FIG. 2B, the conversion unit 12
The grounded coplanar line is disposed up to the inside of the dielectric substrate 2, and above and below the ground layer 1 of the wiring layer A.
4 and the ground layer 10 of the wiring layer C, thereby forming a coplanar line with upper and lower grounds. The ground layers 8 on both sides of the signal line 7 in the coplanar line are formed so as to be terminated with a predetermined length L. As a result, the signal line 7 is converted into a strip line. In the converter 12, the ground layers on both sides of the signal line 7 are electrically connected to, for example, upper and lower ground layers 14, 10 and via holes 15, and are kept at the same potential. This conversion unit 12
Is required to be less than １ ／ of the wavelength λ of the transmission signal, and if the length is の or more of the wavelength λ, resonance occurs in the conversion unit. I will.

In the wiring layer B, a ground layer 16 for preventing leakage of electromagnetic waves is formed around the coplanar line 9, the converter 12, the strip line 13, the power signal line 11, and the high-frequency element 5. A large number of through holes 17 are provided in the ground layer 16 for suppressing variations in potential and for preventing leakage of electromagnetic waves, and are electrically connected to the ground layers 14 and 10.

Further, below the wiring layer C on which the ground layer 10 is formed, as a wiring layer D on the bottom surface of the dielectric substrate 2, as shown in FIG. (Not shown), a signal line 18 having a function as a connection part in the case of surface mounting is formed. This line forms a microstrip line together with the ground layer 10 of the wiring layer C.

The strip line 13 formed on the wiring layer B and the microstrip line 18 formed on the bottom surface of the dielectric substrate 2 pass through a slot hole 19 formed on the ground layer 10 of the wiring layer C. By arranging the terminal portions so as to face each other at positions protruding by a length M from the center of the slot hole 19 in a plan view, electromagnetically coupled signals can be transmitted without loss. Will be

The other end of the power supply signal line 11 is led out through the through hole 20 to the bottom of the package.
It is connected to the connection terminal 21.

Further, as shown in FIG. 3, in order to prevent radiation of electromagnetic waves from the end of the strip line 13 provided on the wiring layer B, as shown in FIG. At least one or more via holes 22 for electrically connecting the ground layer 14 of A and the ground layer 10 of the wiring layer C are desirably formed around the terminal end.

In the package of this embodiment, the ground layer 10 and the thermal vias 23 connected to the ground layer 10 are formed on the lower surface of the high-frequency element 5, and are connected to the conductor layer 24 formed on the bottom surface. In addition, heat generated from the high-frequency element 5 is radiated to the lower surface of the semiconductor device.

As another structure of the conversion part 12 in the wiring layer B, as shown in FIG. 4A, in the conversion part 12, the ground layers on both sides of the signal line in the coplanar line are not only the via holes but also The castellation 25 may be formed on the wall surface of the dielectric substrate 2 so as to conduct to the same potential. Further, the via holes 15 and the castellations 25 may be used in combination.

As shown in FIG. 4B, when the castellation 25 is formed on the wall surface of the dielectric substrate 2, a notch 26 is formed on the ground layer on both sides of the transmission line. It is possible to prevent bleeding of the conductive ink at the time of forming the castellation.

Next, FIG. 5 is a cross-sectional view for explaining another embodiment of the present invention, in which a heat sink is formed on the upper surface of the dielectric substrate 2. In the description, portions having the same functions as those in the embodiment of FIG. 1 are denoted by the same reference numerals.

In the package shown in FIG. 5, a cavity 4 is formed by the dielectric substrate 2, the lid 3, and the heat sink 27. In the cavity 4, the high-frequency element 5 is mounted on the surface of the heat sink 27. The heat generated from the element 5 is directly transmitted to the heat sink and radiated.

In the package shown in FIG. 5, the dielectric substrate 2 basically has four wiring layers of E, F, G and H. In the embodiment of FIG. 5, the wiring layer E corresponds to the wiring layer A, the wiring layer F corresponds to the wiring layer B, the wiring layer G corresponds to the wiring layer C, and the wiring layer H corresponds to the wiring layer D in FIG. Things.

A ground layer 14 made of a conductor layer is formed on the entire surface of the wiring layer E. The wiring layer F includes a grounded coplanar line including a ground layer 14 and a coplanar line 6, a converter 12 formed inside the dielectric substrate 2, and a ground layer 10 formed as a wiring layer G. A strip line having a structure in which the signal line 13 is sandwiched between the ground layers 14 in the wiring layer E is formed.

In the wiring layer H, similarly to the wiring layer D of FIG. 1, a signal line 18 is formed to also function as a connection terminal with an external electric circuit board. A microstrip line is formed. The microstrip line 18 in the wiring layer H and the strip line in the wiring layer F are connected to the slot holes 19 formed in the ground layer 10 in the wiring layer G.
Are electromagnetically coupled to each other.

As a result, the high frequency element 5 is connected to the coplanar line with the ground, the converter, and the strip line, and the strip line and the microstrip line are connected by electromagnetic coupling.

Incidentally, between the wiring layers, the ground layers between the E, F, G, and H wiring layers are electrically connected by via holes and / or castellations in the same manner as described with reference to FIGS. By connecting, it is possible to reduce the leakage of electromagnetic waves from the line and the influence on the power supply line and the like as equipotential. According to the embodiment shown in FIG. 5, the heat sink is brazed to the dielectric substrate 2, and the heat sink is optimally made of a material such as a copper-molybdenum alloy or Kovar.

In the high-frequency package shown in FIG. 1, a dielectric substrate is manufactured using a dielectric material having a dielectric constant of 8.8 and a dielectric loss of 25.0 × 10 ⁻⁴ (measuring frequency 60 GHz). The line, the ground layer, and the via hole were formed using copper. The electromagnetic coupling structure of the strip line and the microstrip line via the slot hole is as follows.
Using a 60 GHz signal, the open end length of the strip line (the distance from the center of the slot hole to the terminal end) is 0.42.
mm, the open end length of the microstrip line (the distance from the center of the slot hole to the terminal end) was 0.48 mm, the slot hole length was 0.85 mm, and the slot hole width was 0.20 mm. In addition, around the end of the strip line, 0.5
Nine via holes were formed at an interval of mm so as to connect the ground layer 14 and the ground layer 10. At this time, the wiring board was placed on the metal block 28 shown in FIG. 6 and electrically connected to the conversion board 29 for evaluation by the ribbon 30, and then the transmission characteristics were measured by a network analyzer. The result is shown in FIG.

FIG. 7B shows a case where no through-hole is formed around the end of the strip line, and the length L of the conversion part is 3/10 of the wavelength λ (60 GHz). FIG. 7 (c) shows the one designed to be 0.49 mm).

From this result, it can be seen that in order to transmit a high frequency signal with low loss, it is better to form a through hole around the end of the strip line.

Next, as a comparative example, in the conventional high frequency package shown in FIG. 8B, a dielectric material having a dielectric constant of 9.6 and a dielectric loss of 18.0 × 10 ^-4 (measuring frequency 60 GHz) was used. 200 μm diameter between transmission lines formed on the bottom
The semiconductor device connected by the via hole made of the copper conductor was similarly measured by a network analyzer, and the result is shown in FIG. From the result of FIG. 9, when the transmission line is connected by the via hole, when the frequency is 20 GHz or more, S11: -1
Since it is 0 dB or more and S21: -30 dB or less, it was found that it was impossible to transmit a high-frequency signal to the semiconductor element.

[0042]

As described in detail above, the high-frequency package of the present invention has little deterioration in signal characteristics and interferes with the power supply signal line and the low-frequency signal line due to leakage of electromagnetic waves from the high-frequency signal line. Without providing, the input / output terminal can be connected to the high frequency semiconductor element formed with the coplanar line structure with low loss.

[Brief description of the drawings]

FIG. 1 is a schematic sectional view illustrating an embodiment of a high-frequency package according to the present invention.

FIG. 2 is a wiring diagram of each wiring layer of the high-frequency package of FIG. 1, wherein (a) is a wiring layer A, (b) is a wiring layer B, and (c).
Indicates a wiring layer C, and (d) indicates a wiring layer D.

FIG. 3 is a plan view for explaining a preferred structure of a terminal portion of a strip line in the high-frequency package of FIG. 1;

FIG. 4 is a perspective view of an essential part for describing a structure in the case where castellations are formed in a conversion unit;
(A) is one embodiment, and (b) is another embodiment.

FIG. 5 is a schematic cross-sectional view for explaining another embodiment of the high frequency package of the present invention.

FIG. 6 is a diagram for explaining a method of measuring transmission characteristics according to the embodiment of the present invention.

FIG. 7 is a diagram illustrating transmission characteristics of a high-frequency package according to the present invention.

8A and 8B are views for explaining a conventional high-frequency package, in which FIG. 8A is one embodiment and FIG. 8B is another embodiment.

FIG. 9 is a diagram illustrating transmission characteristics of a conventional high-frequency package.

[Explanation of symbols]

 REFERENCE SIGNS LIST 1 high-frequency package 2 dielectric substrate 3 lid 4 cavity 5 high-frequency element 10, 14, 16, 8 ground layer 9 grounded coplanar line 12 conversion unit 13 strip line 15 via hole 18 microstrip line 19 slot hole 22 via hole 25 caster Ration 26 notch

Claims (6)

[Claims] 1. A dielectric substrate made of a dielectric material, a cavity formed by the dielectric substrate and a lid for accommodating a high-frequency element, and at least one layer of ground provided in the dielectric substrate. A layer, a coplanar line with a ground formed on the surface of the dielectric substrate in the cavity and connected to the high-frequency element, and a microstrip formed on the surface of the dielectric substrate other than the cavity region of the dielectric substrate A strip line formed in the dielectric substrate via a conversion unit, and the strip line,
A high-frequency package characterized by being electromagnetically coupled to the microstrip line. 2. A method according to claim 1, wherein at least one via hole is formed near an open end of the end of the strip line, and the end is provided in the dielectric substrate and the end of the microstrip line. 2. The high-frequency package according to claim 1, wherein the strip line and the microstrip line are electromagnetically coupled to each other by disposing them at positions facing each other via a slot hole formed in the ground layer. 3. The high-frequency package according to claim 1, wherein the grounded coplanar line is connected to the high-frequency element in a coplanar line structure. 4. A coplanar line comprising a signal line and a pair of ground layers formed on both sides thereof, and a coplanar line with upper and lower grounds formed on upper and lower surfaces of the coplanar line. 2. The high-frequency package according to claim 1, wherein the package comprises: 5. The high-frequency package according to claim 1, wherein the length of the conversion section is less than １ ／ of the wavelength λ of the transmission signal. 6. The conversion section, wherein ground layers on both sides of the signal line are connected to ground layers formed on the upper and lower surfaces,
5. The high-frequency package according to claim 4, wherein the package is electrically connected by via holes and / or castellations.