JPH10286468A - High-frequency heating catalyst and high-frequency absorber - Google Patents
High-frequency heating catalyst and high-frequency absorberInfo
- Publication number
- JPH10286468A JPH10286468A JP9097595A JP9759597A JPH10286468A JP H10286468 A JPH10286468 A JP H10286468A JP 9097595 A JP9097595 A JP 9097595A JP 9759597 A JP9759597 A JP 9759597A JP H10286468 A JPH10286468 A JP H10286468A
- Authority
- JP
- Japan
- Prior art keywords
- frequency
- metal oxide
- substrate
- layer
- frequency absorbing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000003054 catalyst Substances 0.000 title claims abstract description 64
- 238000010438 heat treatment Methods 0.000 title claims abstract description 57
- 239000006096 absorbing agent Substances 0.000 title claims description 23
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 57
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 57
- 238000010521 absorption reaction Methods 0.000 claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 239000000463 material Substances 0.000 claims abstract description 35
- 239000011358 absorbing material Substances 0.000 claims abstract description 28
- 239000000203 mixture Substances 0.000 claims abstract description 15
- 238000006243 chemical reaction Methods 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 7
- 239000002131 composite material Substances 0.000 claims description 12
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 8
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052878 cordierite Inorganic materials 0.000 abstract description 8
- JSKIRARMQDRGJZ-UHFFFAOYSA-N dimagnesium dioxido-bis[(1-oxido-3-oxo-2,4,6,8,9-pentaoxa-1,3-disila-5,7-dialuminabicyclo[3.3.1]nonan-7-yl)oxy]silane Chemical compound [Mg++].[Mg++].[O-][Si]([O-])(O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2)O[Al]1O[Al]2O[Si](=O)O[Si]([O-])(O1)O2 JSKIRARMQDRGJZ-UHFFFAOYSA-N 0.000 abstract description 8
- 238000005192 partition Methods 0.000 abstract description 8
- 229910002138 La0.6Sr0.4CoO3 Inorganic materials 0.000 abstract description 6
- 230000035939 shock Effects 0.000 abstract description 5
- 239000011810 insulating material Substances 0.000 abstract description 4
- 230000003197 catalytic effect Effects 0.000 abstract description 3
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 abstract 2
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 abstract 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000000470 constituent Substances 0.000 abstract 1
- 230000006866 deterioration Effects 0.000 abstract 1
- 229910018921 CoO 3 Inorganic materials 0.000 description 6
- 229910002148 La0.6Sr0.4MnO3 Inorganic materials 0.000 description 5
- 238000002485 combustion reaction Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 230000000630 rising effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 230000002618 waking effect Effects 0.000 description 1
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F01—MACHINES OR ENGINES IN GENERAL; ENGINE PLANTS IN GENERAL; STEAM ENGINES
- F01N—GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR MACHINES OR ENGINES IN GENERAL; GAS-FLOW SILENCERS OR EXHAUST APPARATUS FOR INTERNAL COMBUSTION ENGINES
- F01N3/00—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust
- F01N3/08—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous
- F01N3/10—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust
- F01N3/18—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust characterised by methods of operation; Control
- F01N3/20—Exhaust or silencing apparatus having means for purifying, rendering innocuous, or otherwise treating exhaust for rendering innocuous by thermal or catalytic conversion of noxious components of exhaust characterised by methods of operation; Control specially adapted for catalytic conversion ; Methods of operation or control of catalytic converters
- F01N3/2006—Periodically heating or cooling catalytic reactors, e.g. at cold starting or overheating
- F01N3/2013—Periodically heating or cooling catalytic reactors, e.g. at cold starting or overheating using electric or magnetic heating means
- F01N3/202—Periodically heating or cooling catalytic reactors, e.g. at cold starting or overheating using electric or magnetic heating means using microwaves
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02T—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO TRANSPORTATION
- Y02T10/00—Road transport of goods or passengers
- Y02T10/10—Internal combustion engine [ICE] based vehicles
- Y02T10/12—Improving ICE efficiencies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Combustion & Propulsion (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Processes For Solid Components From Exhaust (AREA)
- Exhaust Gas Treatment By Means Of Catalyst (AREA)
- Catalysts (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、内燃機関の排気ガ
ス装置等に使用される高周波加熱触媒及び高温において
もマイクロ波を効果的に吸収し熱エネルギーに変換する
高周波吸収体に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency heating catalyst used for an exhaust gas device of an internal combustion engine and the like, and to a high-frequency absorber that effectively absorbs microwaves and converts it into heat energy even at a high temperature.
【０００２】[0002]
【従来の技術】従来の内燃機関の排気ガス浄化装置とし
ては、例えば、図５に示すような、マイクロ波を用いて
高周波加熱触媒を加熱し、自動車の排気ガスを浄化する
内燃機関の排気ガス浄化装置が開示されている（特開平
４−３５３２０８）。これは、排気管１ａから加熱室２
に送られて来た排気ガスを、加熱室２に設置された高周
波加熱触媒３を通過させて浄化し、排気管１ｂより排出
するものである。上記高周波加熱触媒３は、支持部材４
により、加熱室２の所定の箇所に配設される。高周波発
振装置５で発生したマイクロ波は導波経路６を通り、結
合スロット７において上記導波経路６と加熱室２のイン
ピーダンス整合が達成され、加熱室２に効率的に伝送さ
れて高周波加熱触媒３に照射される。2. Description of the Related Art As a conventional exhaust gas purifying apparatus for an internal combustion engine, for example, as shown in FIG. 5, an exhaust gas of an internal combustion engine is used to purify an exhaust gas of an automobile by heating a high-frequency heating catalyst using a microwave. A purifying device is disclosed (JP-A-4-353208). This is because the exhaust pipe 1a is connected to the heating chamber 2
The exhaust gas sent to the heating chamber 2 is purified by passing through a high-frequency heating catalyst 3 provided in the heating chamber 2 and discharged from the exhaust pipe 1b. The high-frequency heating catalyst 3 includes a support member 4
Accordingly, the heating chamber 2 is disposed at a predetermined location in the heating chamber 2. The microwave generated by the high-frequency oscillator 5 passes through the waveguide 6, the impedance matching between the waveguide 6 and the heating chamber 2 is achieved in the coupling slot 7, and the microwave is efficiently transmitted to the heating chamber 2 and the high-frequency heating catalyst is 3 is irradiated.
【０００３】高周波加熱触媒３は、図６に示すように、
高周波をほとんど吸収しないハニカム構造を有し絶縁性
の耐熱衝撃性の高いコーディライト焼結体から成る基板
９と、上記基板９の隔壁９Ｋにマイクロ波を吸収するＬ
ａ(1-x)ＳｒxＣｏＯ3（０〈ｘ〈１）等の電気伝導性金
属酸化物から成る高周波吸収層１０と、上記高周波吸収
層１０上に形成された三元触媒を保持させた金属酸化物
層１１から成り、上記高周波吸収層１０は照射されたマ
イクロ波のエネルギーを熱エネルギーに変換し上記金属
酸化物層１１に保持された触媒の温度を動作温度まで上
昇させ、上記基板９の貫通孔９Ｓを通過する排ガス中の
有害物質を取り除くものである。このとき、上記高周波
加熱触媒の温度は、マイクロ波の照射により、５００℃
〜８００℃にまで上昇する。[0003] The high-frequency heating catalyst 3, as shown in FIG.
A substrate 9 made of a cordierite sintered body having an insulating property and high thermal shock resistance having a honeycomb structure that hardly absorbs a high frequency, and an L that absorbs microwaves into a partition 9K of the substrate 9
a A high-frequency absorption layer 10 made of an electrically conductive metal oxide such as (1-x) Sr x CoO 3 (0 <x <1) and a three-way catalyst formed on the high-frequency absorption layer 10 are held. The high-frequency absorption layer 10 converts the irradiated microwave energy into heat energy, raises the temperature of the catalyst held in the metal oxide layer 11 to the operating temperature, and The harmful substances in the exhaust gas passing through the through hole 9S are removed. At this time, the temperature of the high-frequency heating catalyst was set to 500 ° C. by microwave irradiation.
Rise to ８００800 ° C.
【０００４】[0004]
【発明が解決しようとする課題】しかしながら、上記コ
ーディライト焼結体は、ＭｇＯ，Ａｌ2Ｏ3を主成分とし
た複合金属酸化物であるため、電気伝導性金属酸化物と
してＬａＳｒＣｏＯ3を用いた場合、高周波加熱触媒の
温度が上昇した場合、基板９中のＡｌと高周波吸収層１
０中のＣｏが反応してしまい、上記Ｌａ(1-x)ＳｒxＣｏ
Ｏ3の組成比がずれたりするなどしてマイクロ波の熱変
換効率が劣化して触媒の温度上昇率が低下し、高周波加
熱触媒の触媒機能の効率が低下してしまうという問題点
があった。なお、高温において、基板９と高周波吸収材
料１１との反応が起こるのは、上記材料がコーディライ
トとＬａ(1-x)ＳｒxＣｏＯ3との組合せに限ったことで
はなく、高周波吸収層１０を構成する材料がＣｏを含有
しており、基板９を構成する材料がＡｌを含有している
場合に起こるものである。また、高周波吸収層１０を構
成する材料が、例えばＬａ(1-x)ＳｒxＭｎＯ3のように
Ｍｎを含有しており、基板９を構成する材料が、例えば
ＳｉＯ2とＭｇＯの複合酸化物ようにＳｉを含有してい
る場合にも、同様の反応が起こり、高周波加熱触媒の触
媒機能の効率が低下してしまうという問題点があった。However, since the cordierite sintered body is a composite metal oxide containing MgO and Al 2 O 3 as main components, LaSrCoO 3 is used as an electrically conductive metal oxide. In this case, when the temperature of the high-frequency heating catalyst rises, Al in the substrate 9 and the high-frequency absorption layer 1
0 reacts, and the above La (1-x) Sr x Co
There is a problem that the heat conversion efficiency of the microwave is deteriorated due to a shift in the composition ratio of O 3, the rate of temperature rise of the catalyst is reduced, and the efficiency of the catalyst function of the high-frequency heating catalyst is reduced. . Note that in the high temperature, the reaction between the substrate 9 and the high-frequency absorbing material 11 occurs, not that the material is limited to the combination of cordierite and La (1-x) Sr x CoO 3, the high frequency absorbing layer 10 This occurs when the material composing Co contains Co and the material composing the substrate 9 contains Al. The material forming the high-frequency absorption layer 10 contains Mn such as La (1-x) Sr x MnO 3 , and the material forming the substrate 9 is, for example, a composite oxide of SiO 2 and MgO. As described above, even when Si is contained, a similar reaction occurs and there is a problem that the efficiency of the catalytic function of the high-frequency heating catalyst is reduced.
【０００５】また、高周波をほとんど吸収しないハニカ
ム構造を有し絶縁性の耐熱衝撃性の高いコーディライト
焼結体から成る基板の隔壁に、マイクロ波を吸収するＬ
ａ(1 -x)ＳｒxＣｏＯ3等の電気伝導性金属酸化物から成
る高周波吸収層を形成し、照射されたマイクロ波のエネ
ルギーを熱エネルギーに変換する高周波吸収体において
も、上記電波吸収体を高温で使用する場合には、上記高
周波加熱触媒と同様に、高周波吸収層の劣化が起こり、
高周波吸収体の熱変換効率が低下してしまうという問題
があった。[0005] In addition, a microwave absorbing L is applied to a partition wall of a substrate made of a cordierite sintered body having an insulating and high thermal shock resistance having a honeycomb structure that hardly absorbs high frequency.
a (1 -x) Sr x CoO 3 and other high-frequency absorbers that form a high-frequency absorption layer made of an electrically conductive metal oxide and convert the energy of irradiated microwaves into heat energy. When used at a high temperature, the high-frequency absorption layer is deteriorated similarly to the high-frequency heating catalyst,
There has been a problem that the heat conversion efficiency of the high-frequency absorber decreases.
【０００６】本発明は、従来の問題点に鑑みてなされた
もので、マイクロ波の吸収によって高周波吸収材料が高
温になっても、高周波吸収層を構成する材料と基板を構
成する材料との間で反応が起こらず、高周吸収層の熱変
換効率が劣化しないような高周波加熱触媒及び電波吸収
体を提供することを目的とする。[0006] The present invention has been made in view of the conventional problems, and even if the high frequency absorbing material is heated to a high temperature due to the absorption of microwaves, the material forming the high frequency absorbing layer and the material forming the substrate are not interposed. It is an object of the present invention to provide a high-frequency heating catalyst and a radio wave absorber in which no reaction occurs and the heat conversion efficiency of the high-period absorption layer does not deteriorate.
【０００７】[0007]
【課題を解決するための手段】本発明の請求項１に記載
の高周波加熱触媒は、高周波をほとんど吸収しない材料
から成る基板と、上記基板の表面に形成され触媒を保持
した高周波吸収材料からなる高周波吸収層より成るか，
または上記基板の表面に形成された高周波吸収材料から
なる高周波吸収層と上記高周波吸収層の上に形成された
触媒層とから成る高周波加熱触媒において、上記高周波
吸収層と基板間に、高温において上記高周波吸収材料に
含有される金属元素成分とで反応を起こす成分を含有し
ない組成の金属酸化物から成る中間層を設けたことを特
徴とする。なお、上記高温とは、高周波加熱触媒がマイ
クロ波の照射により上昇するときの温度で、約５００℃
〜８００℃の温度をいう。A high-frequency heating catalyst according to a first aspect of the present invention comprises a substrate made of a material that hardly absorbs high frequency, and a high-frequency absorbing material formed on the surface of the substrate and holding the catalyst. Consists of a high frequency absorption layer,
Or in a high-frequency heating catalyst comprising a high-frequency absorbing layer formed of a high-frequency absorbing material formed on the surface of the substrate and a catalyst layer formed on the high-frequency absorbing layer, the high-frequency absorbing layer and the substrate, at a high temperature, The present invention is characterized in that an intermediate layer made of a metal oxide having a composition not containing a component which reacts with a metal element component contained in the high frequency absorbing material is provided. The high temperature is a temperature at which the high-frequency heating catalyst rises by irradiation of microwaves, and is about 500 ° C.
It refers to a temperature of ８００800 ° C.
【０００８】本発明の請求項２に記載の高周波加熱触媒
は、高周波吸収材料がＣｏを含有する電気伝導性金属酸
化物で構成されている場合、上記中間層は、ＳｉＯ2，
ＺｒＯ2，ＣｅＯ2等の一種または２種以上のＡｌを含有
しない金属酸化物または複合金属酸化物であることを特
徴とする。In the high-frequency heating catalyst according to the second aspect of the present invention, when the high-frequency absorbing material is made of an electrically conductive metal oxide containing Co, the intermediate layer is made of SiO 2 ,
It is a metal oxide or a composite metal oxide that does not contain one or two or more kinds of Al such as ZrO 2 and CeO 2 .
【０００９】本発明の請求項３に記載の高周波加熱触媒
は、高周波吸収材料がＭｎを含有する電気伝導性金属酸
化物で構成されている場合、上記中間層は、ＣａＯ，Ａ
ｌ2Ｏ3，ＣｅＯ2等の一種または２種以上のＳｉを含有
しない金属酸化物または複合金属酸化物であることを特
徴とする。In the high-frequency heating catalyst according to the third aspect of the present invention, when the high-frequency absorbing material is made of an electrically conductive metal oxide containing Mn, the intermediate layer is made of CaO, A.
It is a metal oxide or a composite metal oxide that does not contain one or more kinds of Si such as l 2 O 3 and CeO 2 .
【００１０】本発明の請求項４に記載の高周波加熱触媒
は、高周波をほとんど吸収しない材料から成る基板と、
上記基板の表面に形成された高周波吸収材料とからなる
高周波吸収層からなる高周波吸収体において、上記高周
波吸収層と基板間に、高温において上記高周波吸収材料
に含有される金属元素成分とで反応を起こす成分を含有
しない組成の金属酸化物から成る中間層を設けたことを
特徴とする。A high-frequency heating catalyst according to a fourth aspect of the present invention comprises a substrate made of a material that hardly absorbs high frequency;
In a high-frequency absorber composed of a high-frequency absorbing layer formed of a high-frequency absorbing material formed on the surface of the substrate, a reaction between the high-frequency absorbing layer and the substrate at a high temperature with a metal element component contained in the high-frequency absorbing material. It is characterized in that an intermediate layer made of a metal oxide having a composition that does not contain a component that causes a waking is provided.
【００１１】本発明の請求項５に記載の高周波吸収体
は、高周波吸収材料がＭｎを含有する電気伝導性金属酸
化物で構成されている場合、上記中間層は、ＣａＯ，Ａ
ｌ2Ｏ3，ＣｅＯ2等の一種または２種以上のＳｉを含有
しない金属酸化物または複合金属酸化物であることを特
徴とする。In the high frequency absorber according to a fifth aspect of the present invention, when the high frequency absorbing material is made of an electrically conductive metal oxide containing Mn, the intermediate layer is made of CaO, A.
It is a metal oxide or a composite metal oxide that does not contain one or more kinds of Si such as l 2 O 3 and CeO 2 .
【００１２】本発明の請求項６に記載の高周波吸収体
は、高周波吸収材料がＭｎを含有する電気伝導性金属酸
化物で構成されている場合、上記中間層は、ＣａＯ，Ａ
ｌ2Ｏ3，ＣｅＯ2等の一種または２種以上のＳｉを含有
しない金属酸化物または複合金属酸化物であることを特
徴とする。In the high frequency absorber according to a sixth aspect of the present invention, when the high frequency absorbing material is made of an electrically conductive metal oxide containing Mn, the intermediate layer is made of CaO, A.
It is a metal oxide or a composite metal oxide that does not contain one or more kinds of Si such as l 2 O 3 and CeO 2 .
【００１３】[0013]
【発明の実施の形態】以下、本発明の実施の形態につい
て、図面に基づき説明する。なお、以下の説明中、従来
例と共通する部分については同一符号を用いて説明す
る。Embodiments of the present invention will be described below with reference to the drawings. In the following description, portions common to the conventional example will be described using the same reference numerals.
【００１４】実施の形態１．図１は、本発明の実施の形
態１に係わる高周波加熱触媒３Ａの構造を示す図で、高
周波加熱触媒３は、ハニカム構造を有し絶縁性の耐熱衝
撃性の高いコーディライト焼結体から成る基板９の隔壁
９Ｋの表面にコーティングされたＺｒＯ2から成る中間
層１２Ａと、上記中間層１２Ａ上に形成された電気伝導
性金属酸化物であるＬａ0.6Ｓｒ0.4ＣｏＯ3と絶縁材料
であるＣｅＯ2との混合物から成るから成る高周波吸収
層１０Ａと、上記高周波吸収層１０Ａ上に形成されたＰ
ｔ／Ｒｈを保持させたＭｇＯから成る触媒層１１とによ
り構成されている。排気ガスＧは、図１（ｂ）に示すよ
うに、基板９Ａの隔壁９Ｋ間の貫通孔９Ｓを通過すると
き、上記高周波吸収層１０は照射されたマイクロ波のエ
ネルギーを熱エネルギーに変換し上記触媒層１１に保持
された触媒の温度を動作温度まで上昇させるので、上記
触媒の作用により上記貫通孔９Ｓを通過する排ガス中の
有害物質を取り除くことができる。また、図２は、本発
明の実施の形態１に係わる高周波加熱触媒３Ｂの構造を
示す図で、コーディライト焼結体から成る基板９の隔壁
９Ｋの形成されたＡｌ2Ｏ3から成る中間層１２Ｂと、上
記中間層１２Ｂ上に形成された電気伝導性金属酸化物で
あるＬａ0.6Ｓｒ0.4ＭｎＯ3と絶縁材料であるＣｅＯ2と
の混合物から成るから成る高周波吸収層１０Ｂと、上記
高周波吸収層１０Ｂ上に形成されたＰｔ／Ｒｈを保持さ
せたＭｇＯから成る触媒層１１とにより構成されてい
る。Embodiment 1 FIG. 1 is a view showing a structure of a high-frequency heating catalyst 3A according to Embodiment 1 of the present invention. The high-frequency heating catalyst 3 is made of a cordierite sintered body having a honeycomb structure and having high insulation and high thermal shock resistance. An intermediate layer 12A made of ZrO 2 coated on the surface of the partition wall 9K of the substrate 9, La 0.6 Sr 0.4 CoO 3 which is an electrically conductive metal oxide formed on the intermediate layer 12A, and CeO 2 which is an insulating material High-frequency absorption layer 10A made of a mixture of
and a catalyst layer 11 of MgO holding t / Rh. As shown in FIG. 1B, when the exhaust gas G passes through the through hole 9S between the partition walls 9K of the substrate 9A, the high-frequency absorption layer 10 converts the energy of the irradiated microwave into thermal energy, Since the temperature of the catalyst held in the catalyst layer 11 is raised to the operating temperature, harmful substances in the exhaust gas passing through the through holes 9S can be removed by the action of the catalyst. FIG. 2 is a view showing the structure of the high-frequency heating catalyst 3B according to the first embodiment of the present invention, in which an intermediate layer made of Al 2 O 3 having a partition 9K formed on a substrate 9 made of cordierite sintered body. 12B, a high-frequency absorption layer 10B made of a mixture of La 0.6 Sr 0.4 MnO 3 as an electrically conductive metal oxide and CeO 2 as an insulating material formed on the intermediate layer 12B, and the high-frequency absorption layer And a catalyst layer 11 of MgO holding Pt / Rh formed on 10B.
【００１５】図５の排気ガス浄化装置の高周波加熱触媒
３に代えて、上記構成の高周波加熱触媒３Ａを、排気ガ
ス浄化装置の加熱室２に配設し、高周波発振器５で発生
した出力電力６００Ｗａｔｔ，周波数２．４５ＧＨｚの
マイクロ波を上記高周波加熱触媒３Ａに照射したとこ
ろ、高周波加熱触媒３Ａの表面温度は、マイクロ波のエ
ネルギーと触媒反応による発熱のため、３０秒後に約８
００℃に達した。しかしながら、高周波加熱媒体３Ａの
高周波吸収層１０Ａは変質しておらず、上記条件で繰り
返し約８００℃まで昇温させても、高周波加熱媒体３Ａ
の昇温特性はほとんど変わらず、また、上記繰り返し昇
温試験後の高周波吸収層１０Ａの電気抵抗も変化しなか
った。また、上記構成の高周波加熱触媒３Ｂを用いて同
様の試験を行ったが、高周波加熱触媒３Ｂの高周波吸収
層１０Ｂは変質しておらず、試験後の高周波吸収層１０
Ｂの電気抵抗も変化しなかった。Instead of the high-frequency heating catalyst 3 of the exhaust gas purifying apparatus shown in FIG. 5, a high-frequency heating catalyst 3A having the above configuration is disposed in the heating chamber 2 of the exhaust gas purifying apparatus. When microwaves having a frequency of 2.45 GHz were applied to the high-frequency heating catalyst 3A, the surface temperature of the high-frequency heating catalyst 3A was reduced to about 8 after 30 seconds due to heat generated by the microwave energy and catalytic reaction.
00 ° C was reached. However, the high-frequency absorption layer 10A of the high-frequency heating medium 3A is not deteriorated, and even if the temperature is repeatedly increased to about 800 ° C. under the above conditions, the high-frequency heating medium 3A
Of the high-frequency absorption layer 10A after the above-mentioned repeated temperature rise test did not change. A similar test was performed using the high-frequency heating catalyst 3B having the above configuration. However, the high-frequency absorbing layer 10B of the high-frequency heating catalyst 3B was not altered, and the high-frequency absorbing layer 10B after the test was not modified.
The electrical resistance of B did not change.
【００１６】このように、本実施の形態１によれば、高
周波吸収層と基板９間に中間層を設け、高周波吸収層１
０Ａを構成する材料がＣｏを含有したＬａ0.6Ｓｒ0.4Ｃ
ｏＯ3である場合には、中間層１２ＡをＡｌを含有しな
い金属酸化物であるＺｒＯ2で構成し、高周波吸収層１
０Ｂを構成する材料がＭｎを含有したＬａ0.6Ｓｒ0.4Ｍ
ｎＯ3である場合には、中間層１２ＢをＳｉを含有しな
い金属酸化物であるＡｌ2Ｏ3で構成したので、高周波加
熱触媒がマイクロ波の照射により約８００℃まで上昇し
ても、高周波吸収層Ｌａ0.6Ｓｒ0.4ＣｏＯ3またはＬａ
0.6Ｓｒ0.4ＭｎＯ3が変質することがなく、したがっ
て、高周波加熱触媒の触媒機能も劣化することがなかっ
た。As described above, according to the first embodiment, the intermediate layer is provided between the high-frequency absorption layer and the substrate 9, and the high-frequency absorption layer 1
The material constituting 0A is La 0.6 Sr 0.4 C containing Co.
In the case of oO 3 , the intermediate layer 12A is made of ZrO 2 which is a metal oxide containing no Al,
The material constituting OB is La 0.6 Sr 0.4 M containing Mn.
In the case of nO 3 , since the intermediate layer 12B is made of Al 2 O 3 which is a metal oxide containing no Si, even if the high-frequency heating catalyst rises to about 800 ° C. by microwave irradiation, high-frequency absorption Layer La 0.6 Sr 0.4 CoO 3 or La
0.6 Sr 0.4 MnO 3 was not deteriorated, and therefore, the catalytic function of the high-frequency heating catalyst was not deteriorated.
【００１７】なお、本実施の形態１においては、高周波
吸収層１０Ａ上に触媒層１１を形成するとともに、基板
９と高周波吸収材から成る高周波吸収層１０Ａとの間に
中間層を設けたが、図３に示すように、Ｐｔ／Ｒｈ等の
触媒を保持した高周波吸収材料からなる高周波吸収層１
３を有する高周波加熱触媒においても、基板９の隔壁９
Ｋと上記高周波吸収層１３との間に設ける中間層１２Ｃ
の組成は、高周波吸収層１３を構成する材料がＣｏを含
有した例えばＬａ0.6Ｓｒ0.4ＣｏＯ3である場合には、
中間層１３をＡｌを含有しない金属酸化物であるＺｒＯ
2等で構成し、高周波吸収層１３を構成する材料がＭｎ
を含有した例えばＬａ0.6Ｓｒ0.4ＭｎＯ3である場合に
は、中間層１３をＳｉを含有しない金属酸化物であるＡ
ｌ2Ｏ3等で構成する。In the first embodiment, the catalyst layer 11 is formed on the high-frequency absorbing layer 10A, and the intermediate layer is provided between the substrate 9 and the high-frequency absorbing layer 10A made of the high-frequency absorbing material. As shown in FIG. 3, a high frequency absorbing layer 1 made of a high frequency absorbing material holding a catalyst such as Pt / Rh.
In the high-frequency heating catalyst having 3
An intermediate layer 12C provided between K and the high-frequency absorption layer 13
When the material constituting the high-frequency absorption layer 13 is, for example, La 0.6 Sr 0.4 CoO 3 containing Co,
The intermediate layer 13 is made of ZrO which is a metal oxide containing no Al.
2 and the material constituting the high frequency absorption layer 13 is Mn.
For example, in the case of La 0.6 Sr 0.4 MnO 3 containing Al, the intermediate layer 13 is made of A which is a metal oxide containing no Si.
It is composed of l 2 O 3 or the like.
【００１８】また、上記実施の形態１では、高周波吸収
層を構成する材料として、Ｃｏを含有したＬａ0.6Ｓｒ
0.4ＣｏＯ3やＭｎを含有したＬａ0.6Ｓｒ0.4ＭｎＯ3を
用いたが、Ｌａ(1-x)ＳｒxＣｏＯ3，Ｌａ(1-x)ＳｒxＣ
ｒＯ3，Ｌａ(1-x)ＳｒxＭｎＯ3，Ｌａ(1-x)ＳｒxＣｏ
(1-y)ＰｄyＯ3，Ｌａ(1-x)ＳｒxＭｎ(1-y)ＰｄyＯ3（０
〈ｘ〈１，０〈ｙ〈１）等を用いても良い。中間層とし
ては、Ａｌを含有しない金属酸化物として、上記ＺｒＯ
2の他に、例えばＭｇＯ，ＳｉＯ2，ＣａＯ，ＣｅＯ2や
上記金属酸化物の２種以上の複合酸化物を用いてもよ
い。また、Ｓｉを含有しない金属酸化物として、上記Ａ
ｌ2Ｏ3の他に、例えばＭｇＯ，ＺｒＯ2，ＣａＯ，Ｃｅ
Ｏ2や上記金属酸化物の２種以上の複合酸化物を用いて
もよい。In the first embodiment, the material constituting the high-frequency absorption layer is La 0.6 Sr containing Co.
La 0.6 Sr 0.4 MnO 3 containing 0.4 CoO 3 or Mn was used, but La (1-x) Sr x CoO 3 and La (1-x) Sr x C
rO 3 , La (1-x) Sr x MnO 3 , La (1-x) Sr x Co
(1-y) Pd y O 3 , La (1-x) Sr x Mn (1-y) Pd y O 3 (0
<X <1, 0 <y <1) or the like may be used. As the intermediate layer, the above-mentioned ZrO
Besides 2 , for example, a composite oxide of two or more of MgO, SiO 2 , CaO, CeO 2 and the above-mentioned metal oxides may be used. Further, as the metal oxide containing no Si, the above A
In addition to l 2 O 3 , for example, MgO, ZrO 2 , CaO, Ce
O 2 or a composite oxide of two or more of the above metal oxides may be used.
【００１９】実施の形態２．図４は、本発明の実施の形
態に係わる高周波吸収体１４の構造を示す図で、高周波
吸収体１４は、ハニカム構造を有し絶縁性の耐熱衝撃性
の高いコーディライト焼結体から成る基板９の隔壁９Ｋ
の表面にコーティングされたＺｒＯ2から成る中間層１
２Ｄと、上記中間層１２Ｄ上に形成された電気伝導性金
属酸化物であるＬａ0.6Ｓｒ0.4ＣｏＯ3と絶縁材料であ
るＣｅＯ2との混合物から成るから高周波吸収層１０Ｄ
とにより構成されている。この高周波吸収体１４に出力
電力６００Ｗａｔｔ，周波数２．４５ＧＨｚのマイクロ
波を照射したところ、表面温度は１５秒後に約８００℃
に達した。また、上記条件で繰り返し約８００℃まで昇
温させても、高周波吸収体１４の昇温特性はほとんど変
わらず、また、上記繰り返し昇温試験後の高周波吸収層
１０Ｄの電気抵抗も変化しなかった。また、高周波吸収
層１０Ｄを構成する材料がＭｎを含有した例えばＬａ
0.6Ｓｒ0.4ＭｎＯ3とし、中間層１２ＤをＳｉを含有し
ない金属酸化物であるＡｌ2Ｏ3等で構成した場合でも、
同様の効果が得られた。Embodiment 2 FIG. 4 is a view showing the structure of the high-frequency absorber 14 according to the embodiment of the present invention. The high-frequency absorber 14 has a honeycomb structure and is made of a cordierite sintered body having insulation and high thermal shock resistance. 9 partition wall 9K
Intermediate layer 1 made of ZrO 2 coated on the surface of
2D and a mixture of La 0.6 Sr 0.4 CoO 3 as an electrically conductive metal oxide and CeO 2 as an insulating material formed on the intermediate layer 12D.
It is composed of When this microwave absorber 14 was irradiated with microwaves having an output power of 600 Watt and a frequency of 2.45 GHz, the surface temperature became about 800 ° C. after 15 seconds.
Reached. Further, even if the temperature was repeatedly raised to about 800 ° C. under the above conditions, the temperature rising characteristics of the high-frequency absorber 14 hardly changed, and the electrical resistance of the high-frequency absorbing layer 10D after the above-mentioned repeated temperature rising test did not change. . The material forming the high-frequency absorption layer 10D contains Mn, for example, La.
Even when 0.6 Sr 0.4 MnO 3 is used and the intermediate layer 12D is made of Al 2 O 3 which is a metal oxide containing no Si,
Similar effects were obtained.
【００２０】このように、本実施の形態２によれば、高
周波吸収層と基板９間に中間層を設け、高周波吸収層１
０Ａを構成する材料がＣｏを含有したＬａ0.6Ｓｒ0.4Ｃ
ｏＯ3である場合には、中間層１２ＡをＡｌを含有しな
い金属酸化物であるＺｒＯ2で構成し、高周波吸収層１
０Ｂを構成する材料がＭｎを含有したＬａ0.6Ｓｒ0.4Ｃ
ｏＯ3である場合には、中間層１２ＢをＳｉを含有しな
い金属酸化物であるＡｌ2Ｏ3で構成したので、高周波吸
収体がマイクロ波の照射により約９５０℃まで上昇して
も、高周波吸収材料Ｌａ0.6Ｓｒ0.4ＣｏＯ3またはＬａ
0.6Ｓｒ0.4ＭｎＯ3が変質することがなく、したがっ
て、高周波吸収体の熱変換効率も劣化することがなかっ
た。なお、実施の形態２においても、高周波吸収材料に
Ｌａ(1-x)ＳｒxＣｏＯ3，Ｌａ(1-x)ＳｒxＣｏ(1-y)Ｐｄ
yＯ3，Ｌａ(1-x)ＳｒxＭｎ(1-y)ＰｄyＯ3（０〈ｘ
〈１，０〈ｙ〈１）等を用いても良い。中間層として
は、Ａｌを含有しない金属酸化物として、ＺｒＯ2，Ｍ
ｇＯ，ＳｉＯ2，ＣａＯ，ＣｅＯ2や上記金属酸化物の２
種以上の複合酸化物を用いてもよい。また、Ｓｉを含有
しない金属酸化物として、Ａｌ2Ｏ3，ＭｇＯ，Ｚｒ
Ｏ2，ＣａＯ，ＣｅＯ2や上記金属酸化物の２種以上の複
合酸化物を用いてもよい。As described above, according to the second embodiment, the intermediate layer is provided between the high-frequency absorption layer and the substrate 9, and the high-frequency absorption layer 1
The material constituting 0A is La 0.6 Sr 0.4 C containing Co.
In the case of oO 3 , the intermediate layer 12A is made of ZrO 2 which is a metal oxide containing no Al,
The material constituting OB is La 0.6 Sr 0.4 C containing Mn.
In the case of oO 3 , since the intermediate layer 12B is made of Al 2 O 3 which is a metal oxide containing no Si, even if the high-frequency absorber rises to about 950 ° C. by microwave irradiation, Material La 0.6 Sr 0.4 CoO 3 or La
0.6 Sr 0.4 MnO 3 was not deteriorated, and therefore, the heat conversion efficiency of the high frequency absorber was not deteriorated. Note that, also in the second embodiment, La (1-x) Sr x CoO 3 and La (1-x) Sr x Co (1-y) Pd
y O 3 , La (1-x) Sr x Mn (1-y) Pd y O 3 (0 <x
<1,0 <y <1) or the like may be used. As the intermediate layer, ZrO 2 , M
gO, SiO 2 , CaO, CeO 2 and the above-mentioned metal oxides 2
More than one kind of composite oxide may be used. Al 2 O 3 , MgO, Zr are used as metal oxides containing no Si.
O 2 , CaO, CeO 2, or two or more composite oxides of the above metal oxides may be used.
【００２１】[0021]
【発明の効果】以上説明したように、請求項１記載の高
周波加熱触媒は、高周波吸収層と基板間に、高温におい
て上記高周波吸収材料に含有される金属元素成分と反応
を起こす成分を含有しない組成の金属酸化物から成る中
間層を設けたので、マイクロ波の吸収によって高周波吸
収材料が高温になっても、高周波吸収層を構成する材料
と基板を構成する材料との間で反応が起こらず、触媒機
能も劣化することがない。また、長時間の使用にも特性
変化のほとんどないので、高周波加熱触媒の信頼性も大
幅に向上させることができる。As described above, the high-frequency heating catalyst according to the first aspect does not contain, between the high-frequency absorbing layer and the substrate, a component that reacts with the metal element component contained in the high-frequency absorbing material at a high temperature. Since the intermediate layer made of the metal oxide having the composition is provided, even if the high frequency absorbing material becomes high temperature due to microwave absorption, no reaction occurs between the material forming the high frequency absorbing layer and the material forming the substrate. Also, the catalyst function does not deteriorate. Further, since there is almost no characteristic change even when used for a long time, the reliability of the high-frequency heating catalyst can be greatly improved.
【００２２】また、請求項２記載の高周波加熱触媒は、
高周波吸収層を構成する材料にＣｏを含有した材料を使
用する場合には、中間層をＡｌを含有しない金属酸化物
で構成するようにしたので、中間層の組成を予め限定す
ることができる。The high-frequency heating catalyst according to claim 2 is
When a material containing Co is used as the material forming the high frequency absorption layer, the composition of the intermediate layer can be limited in advance because the intermediate layer is made of a metal oxide containing no Al.
【００２３】また、請求項３記載の高周波加熱触媒は、
高周波吸収層を構成する材料にＭｎを含有した材料を使
用する場合には、中間層をＳｉを含有しない金属酸化物
で構成するようにしたので、中間層の組成を予め限定す
ることができる。The high-frequency heating catalyst according to claim 3 is
When a material containing Mn is used as the material forming the high-frequency absorption layer, the composition of the intermediate layer can be limited in advance because the intermediate layer is made of a metal oxide containing no Si.
【００２４】また、請求項４記載の高周波吸収体は、高
周波吸収層と基板間に、高温において上記高周波吸収材
料に含有される金属元素成分と反応を起こす成分を含有
しない組成の金属酸化物から成る中間層を設けたので、
マイクロ波の吸収によって高周波吸収材料が高温になっ
ても高周波吸収層を構成する材料と基板を構成する材料
との間で反応が起こらず、したがって高温においてもマ
イクロ波の熱変換効率が劣化しないようにすることがで
きる。According to a fourth aspect of the present invention, there is provided a high-frequency absorber comprising, between the high-frequency absorbing layer and the substrate, a metal oxide having a composition not containing a component which reacts with a metal element component contained in the high-frequency absorbing material at a high temperature. With an intermediate layer consisting of
Even if the high-frequency absorbing material is heated to a high temperature by microwave absorption, no reaction occurs between the material forming the high-frequency absorbing layer and the material forming the substrate, so that the microwave heat conversion efficiency does not deteriorate even at a high temperature. Can be
【００２５】また、請求項５記載の高周波吸収体は、高
周波吸収層を構成する材料にＣｏを含有した材料を使用
する場合には、中間層をＡｌを含有しない金属酸化物で
構成するようにしたので、中間層の組成を予め限定する
ことができる。Further, in the high frequency absorber according to the fifth aspect, when a material containing Co is used as a material constituting the high frequency absorbing layer, the intermediate layer is made of a metal oxide containing no Al. Therefore, the composition of the intermediate layer can be limited in advance.
【００２６】また、請求項６記載の高周波吸収体は、高
周波吸収層を構成する材料にＭｎを含有した材料を使用
する場合には、中間層をＳｉを含有しない金属酸化物で
構成するようにしたので、中間層の組成を予め限定する
ことができる。In the high frequency absorber according to the sixth aspect, when a material containing Mn is used as a material for forming the high frequency absorption layer, the intermediate layer may be made of a metal oxide containing no Si. Therefore, the composition of the intermediate layer can be limited in advance.
【図１】本発明の実施形態１に係わる高周波加熱触媒の
構造を示す図である。FIG. 1 is a diagram showing a structure of a high-frequency heating catalyst according to Embodiment 1 of the present invention.
【図２】本発明の実施形態１に係わる他の高周波加熱触
媒の構造を示す図である。FIG. 2 is a view showing the structure of another high-frequency heating catalyst according to Embodiment 1 of the present invention.
【図３】本発明の実施形態１に係わる他の高周波加熱触
媒の構造を示す図である。FIG. 3 is a view showing the structure of another high-frequency heating catalyst according to Embodiment 1 of the present invention.
【図４】本発明の実施形態２に係わる高周波吸収体の構
造を示す図である。FIG. 4 is a diagram illustrating a structure of a high-frequency absorber according to a second embodiment of the present invention.
【図５】従来の排気ガス浄化装置の構成を示す図であ
る。FIG. 5 is a diagram showing a configuration of a conventional exhaust gas purification device.
【図６】従来の高周波加熱触媒の構造を示す図である。FIG. 6 is a view showing the structure of a conventional high-frequency heating catalyst.
１ａ，１ｂ 排気管 ２ 加熱室 ３，３Ａ，３Ｂ 高周波加熱触媒 ４ 支持部材 ５ 高周波発振器 ６ 導波経路 ７ 結合スロット ８ａ，８ｂ 反射板 ９ 基板 ９Ｋ 隔壁 １０，１０Ａ，１０Ｂ，１０Ｃ，１０Ｄ高周波吸収層 １１ 触媒層 １２Ａ，１２Ｂ，１２Ｃ，１２Ｄ中間層 １３ （触媒を保持した）高周波吸収層 １４ 高周波吸収体 1a, 1b Exhaust pipe 2 Heating chamber 3, 3A, 3B High frequency heating catalyst 4 Support member 5 High frequency oscillator 6 Guide path 7 Coupling slot 8a, 8b Reflector 9 Substrate 9K Partition wall 10, 10A, 10B, 10C, 10D High frequency absorption layer Reference Signs List 11 catalyst layer 12A, 12B, 12C, 12D intermediate layer 13 (high-frequency absorption layer holding catalyst) 14 high-frequency absorber
Claims (6)
る基板と、上記基板の表面に形成され触媒を保持した高
周波吸収材料からなる高周波吸収層より成るか，または
上記基板の表面に形成された高周波吸収材料からなる高
周波吸収層と上記高周波吸収層の上に形成された触媒層
とから成る高周波加熱触媒において、上記高周波吸収層
と基板間に、高温において上記高周波吸収材料に含有さ
れる金属元素成分とで反応を起こす成分を含有しない組
成の金属酸化物から成る中間層を設けたことを特徴とす
る高周波加熱触媒。1. A substrate made of a material that hardly absorbs high frequency and a high frequency absorbing layer formed on the surface of the substrate and made of a high frequency absorbing material holding a catalyst, or a high frequency absorbing layer formed on the surface of the substrate In a high-frequency heating catalyst comprising a high-frequency absorption layer made of a material and a catalyst layer formed on the high-frequency absorption layer, a metal element component contained in the high-frequency absorption material at a high temperature between the high-frequency absorption layer and the substrate. A high-frequency heating catalyst comprising an intermediate layer made of a metal oxide having a composition that does not contain a component that causes a reaction.
導性金属酸化物で構成されている場合、上記中間層は、
ＳｉＯ2，ＺｒＯ2，ＣｅＯ2等の一種または２種以上の
Ａｌを含有しない金属酸化物または複合金属酸化物であ
ることを特徴とする請求項１記載の高周波加熱触媒。2. When the high-frequency absorbing material is composed of an electrically conductive metal oxide containing Co, the intermediate layer comprises:
SiO 2, ZrO 2, CeO 2 or the like of one or two metal oxides containing no more than Al or high-frequency heating catalyst according to claim 1, characterized in that a composite metal oxide.
導性金属酸化物で構成されている場合、上記中間層は、
ＣａＯ，Ａｌ2Ｏ3，ＣｅＯ2等の一種または２種以上の
Ｓｉを含有しない金属酸化物または複合金属酸化物であ
ることを特徴とする請求項１記載の高周波加熱触媒。3. When the high-frequency absorbing material is composed of an electrically conductive metal oxide containing Mn, the intermediate layer comprises:
CaO, Al 2 O 3, not containing one or more Si such as CeO 2 metal oxide or high-frequency heating catalyst according to claim 1, characterized in that a composite metal oxide.
る基板と、上記基板の表面に形成された高周波吸収材料
からなる高周波吸収層とからなる高周波吸収体におい
て、上記高周波吸収層と基板間に、高温において上記高
周波吸収材料に含有される金属元素成分とで反応を起こ
す成分を含有しない組成の金属酸化物から成る中間層を
設けたことを特徴とする高周波吸収体。4. A high-frequency absorber comprising a substrate made of a material that hardly absorbs high frequency and a high-frequency absorbing layer made of a high-frequency absorbing material formed on the surface of the substrate, wherein a high-temperature absorbing material is provided between the high-frequency absorbing layer and the substrate. 3. The high-frequency absorber according to claim 1, further comprising an intermediate layer made of a metal oxide having a composition not containing a component which reacts with a metal element contained in the high-frequency absorbing material.
導性金属酸化物で構成されている場合、上記中間層は、
ＳｉＯ2，ＺｒＯ2，ＣｅＯ2等の一種または２種以上の
Ａｌを含有しない金属酸化物または複合金属酸化物であ
ることを特徴とする請求項４記載の高周波吸収体。5. When the high-frequency absorbing material is composed of an electrically conductive metal oxide containing Co, the intermediate layer comprises:
SiO 2, ZrO 2, one or a metal oxide not containing two or more Al such as CeO 2 or a high-frequency absorber of claim 4, characterized in that the complex metal oxide.
導性金属酸化物で構成されている場合、上記中間層は、
ＣａＯ，Ａｌ2Ｏ3，ＣｅＯ2等の一種または２種以上の
Ｓｉを含有しない金属酸化物または複合金属酸化物であ
ることを特徴とする請求項４記載の高周波吸収体。6. When the high-frequency absorbing material is composed of an electrically conductive metal oxide containing Mn, the intermediate layer comprises:
CaO, Al 2 O 3, one or a metal oxide not containing two or more Si such as CeO 2 or a high-frequency absorber of claim 4, characterized in that the complex metal oxide.
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9097595A JPH10286468A (en) | 1997-04-15 | 1997-04-15 | High-frequency heating catalyst and high-frequency absorber |
| US09/055,918 US5940022A (en) | 1997-04-10 | 1998-04-07 | Electromagnetic wave absorber |
| EP98106494A EP0871240A3 (en) | 1997-04-10 | 1998-04-08 | Electromagnetic wave absorber |
| EP98106509A EP0872911A3 (en) | 1997-04-15 | 1998-04-08 | Absorbing layer for a high-frequency heating catalyst |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP9097595A JPH10286468A (en) | 1997-04-15 | 1997-04-15 | High-frequency heating catalyst and high-frequency absorber |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10286468A true JPH10286468A (en) | 1998-10-27 |
Family
ID=14196598
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP9097595A Withdrawn JPH10286468A (en) | 1997-04-10 | 1997-04-15 | High-frequency heating catalyst and high-frequency absorber |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH10286468A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002080271A (en) * | 2000-05-31 | 2002-03-19 | Corning Inc | Diesel engine exhaust gas filter |
| JPWO2013039123A1 (en) * | 2011-09-15 | 2015-03-26 | イマジニアリング株式会社 | Heating device |
| CN108940244A (en) * | 2018-08-20 | 2018-12-07 | 南通斐腾新材料科技有限公司 | A kind of honeycomb zeolite adsorbents of microwave heating and preparation method thereof |
-
1997
- 1997-04-15 JP JP9097595A patent/JPH10286468A/en not_active Withdrawn
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002080271A (en) * | 2000-05-31 | 2002-03-19 | Corning Inc | Diesel engine exhaust gas filter |
| JPWO2013039123A1 (en) * | 2011-09-15 | 2015-03-26 | イマジニアリング株式会社 | Heating device |
| EP2767691A4 (en) * | 2011-09-15 | 2015-10-21 | Imagineering Inc | Heating device |
| CN108940244A (en) * | 2018-08-20 | 2018-12-07 | 南通斐腾新材料科技有限公司 | A kind of honeycomb zeolite adsorbents of microwave heating and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6131386A (en) | Single mode resonant cavity | |
| US7261865B2 (en) | Heatable honeycomb body with two different coatings | |
| US5234668A (en) | Catalytic converter for use in automotive exhaust emissions control | |
| JP2004533312A (en) | Reactor for plasma-based treatment of gaseous media | |
| JPH08141408A (en) | Catalyst carrier with resistance regulation type heater for purification of exhaust gas and production | |
| JPH10286468A (en) | High-frequency heating catalyst and high-frequency absorber | |
| JPH10288027A (en) | High frequency heating catalyst | |
| US6887440B2 (en) | Edge-connected non-thermal plasma exhaust after-treatment device | |
| EP0872911A2 (en) | Absorbing layer for a high-frequency heating catalyst | |
| AU651352B2 (en) | Resistance adjusting type heater, catalytic converter and method of operating catalytic converter | |
| US6800256B2 (en) | Scaleable inter-digitized tine non-thermal plasma reactor | |
| US6838058B2 (en) | Structural carrier non-thermal plasma reactor | |
| JP2000104538A (en) | Exhaust emission control system | |
| JPH05168950A (en) | Combustion exhaust gas purification catalyst | |
| JPH07111344A (en) | Thermoelectric power generating device | |
| JPH06248935A (en) | High-frequency heating element having catalytic function | |
| JP2643467B2 (en) | Catalytic reactor | |
| JPH0471620A (en) | High-frequency heating exhaust gas purifier | |
| JP2870376B2 (en) | High frequency heating element with catalytic function | |
| JP3036283B2 (en) | Oxygen concentration sensor with heater | |
| JP2830562B2 (en) | High frequency heating element | |
| JPH06254404A (en) | Self-heating catalyst converter | |
| JP2000104539A (en) | Exhaust emission control system | |
| JPH062535A (en) | Exhaust emission control device for internal combustion engine | |
| JP2900758B2 (en) | High frequency heating element with catalytic function |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A761 | Written withdrawal of application |
Free format text: JAPANESE INTERMEDIATE CODE: A761 Effective date: 20041215 |