JPH1020319A - Wiring board, production of wiring board, liquid crystal element formed by using the wiring board and production of the liquid crystal element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a wiring board with which the peeling of metallic electrodes at the time of a parting stage is eliminated by disposing wiring materials into plural recessed parts formed in an insulating layer, thereby forming auxiliary electrodes. SOLUTION: A prescribed amt. of a UV curing resin 11a is dropped onto a glass substrate 6 formed with a ground surface layer 6a and thereafter, a smooth plate 12 having the projecting parts 12a in the form of metallic wiring patterns is brought into contact with the substrate and is tightly adhered thereto so as to hold the UV curing resin 11a. The UV curing resin 11a is cured by irradiating the resin with UV light from the smooth plate 12 side. After the smooth plate 12 is peeled by a parting device, the metallic electrodes 10 which are the auxiliary electrodes consisting of three metallic layers of Ni, Cu and Ni are formed by a plating method into the recessed parts S formed like patterns between the resin films 11, by which the metallic electrode substrate 14 is obtd. The films of transparent electrodes 7 consisting of ITO, etc., which are the main electrodes are formed on the metallic electrode substrate 14 so as to be conducted to the metallic electrodes 10 and are patterned, by which the wiring board 2 is obtd.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wiring board used for a liquid crystal element, a method of manufacturing the wiring board, a liquid crystal element using the wiring board, and a method of manufacturing the liquid crystal element, and more particularly to the formation of an auxiliary electrode.

[0002]

2. Description of the Related Art Hitherto, liquid crystal elements for displaying information using liquid crystals have been used in various fields. First,
The structure of this liquid crystal element will be briefly described with reference to FIGS.

As shown in FIG. 38, this liquid crystal element has a pair of glass substrates 71, 71 arranged so as to face each other.
These glass substrates 71, 71 are bonded together by a sealing member 65, and a ferroelectric liquid crystal 66 is held in an internal gap. On the other hand, on the surfaces of the pair of substrates 71, 71, an ITO transparent electrode 76 for driving liquid crystal is provided.
Are formed in a stripe shape.
6 forms a simple matrix when the liquid crystal element is assembled.

Here, these transparent electrodes 76 are 500 to
It has a thickness of about 5000 ° and is formed in a stripe shape by a patterning process as shown in FIG.
On the surface of these transparent electrodes 76, a dielectric film 67 for preventing short circuit is formed by silicon oxide, titanium oxide or the like to a thickness of about 500 to 3000 °, and furthermore, a polyimide resin or the like is formed on the surface. Thus, an alignment film 68 is formed.

Since the ferroelectric liquid crystal 66 is generally a chiral smectic liquid crystal (SmC *, SmH *), the liquid crystal molecule has a twisted long axis in the bulk state. In this case, the long axis of the liquid crystal molecules can be prevented from being twisted.

On the other hand, such a liquid crystal element is driven by applying a voltage to the transparent electrodes 76 opposed to each other, but the liquid crystal 66 interposed between the transparent electrodes 76 has a capacitive electric circuit. , The propagation delay of the voltage waveform is likely to occur. In particular, in the case of a liquid crystal display device using a ferroelectric liquid crystal 66, the cell thickness is 1 to 2 μm, which is 1/3 to 1/5 that of a TN type liquid crystal device or the like. Even when the formed substrate was used, the propagation delay of the voltage waveform was remarkable as compared with the TN type liquid crystal element.

In recent years, it has been desired to increase the definition of liquid crystal elements (panels), so that it is necessary to avoid propagation delay. To achieve this, for example, a sheet resistance of 20 to 400Ω and a volume resistance of 200 × 10 ^{-8 to} 400
It is conceivable that the resistance value of the transparent electrode 76, which is higher than 0 × 10 ⁻⁸ Ωm, which is higher than that of a metal material (for example, 3 × 10 ⁻⁸ Ωm for aluminum), can be reduced by making the transparent electrode 76 thicker.

However, when the thickness of the transparent electrode 76 is increased, the transmittance is reduced and the transparent electrode 76 is recognized, and the display quality is deteriorated. It is difficult to avoid.

Further, as another method, chromium (volume resistance = 15 × 10 ⁻⁸ Ωm) or molybdenum (volume resistance = 6 × 1
^0-8 Ωm) and a transparent electrode 7
6 may be provided alongside the surface (the surface on which the liquid crystal 66 is injected).

However, even if the metal electrodes are provided in this manner, the thickness of the metal electrodes cannot be made more than half of the gap between the transparent electrodes in order to avoid contact between the metal electrodes. For example, in the case where the gap between the transparent electrodes is as thin as about 1.1 μm, the metal electrode cannot be made 550 nm or more at the maximum. Therefore, the effect of reducing the resistance value by this metal electrode is not great, and the delay of the voltage waveform is avoided. Had limitations.

Further, when the metal electrode is formed in this manner, as described with reference to FIG. 38, it is necessary to cover the metal electrode with the alignment film 68 and arrange the liquid crystal molecules in an order in a certain direction by the alignment film 68. There is. However, when the metal electrode is coated in this way, unevenness due to the metal electrode is generated in the alignment film 68, and an optical difference is generated between the concave portion and the convex portion, thereby deteriorating display quality. In addition, there is also a problem that the electric field response changes and crosstalk easily occurs.

Further, there is a problem that the rubbing treatment of the alignment film 68 is not uniform due to the unevenness due to the metal electrode, and optical differences and crosstalk also occur. Such a problem is remarkable in a liquid crystal element in which the pixel size is reduced for higher definition. In order to avoid such a problem, the thickness of the metal electrode must be equal to or less than a predetermined value (actually, 250 nm). Therefore, even if the metal electrode is used, the delay of the voltage waveform cannot be avoided.

On the other hand, it is necessary to increase the driving frequency in order to increase the definition of the liquid crystal element. However, in order to increase the driving frequency, it is essential to set the thickness of the metal electrode to a predetermined value or more. It has been confirmed by the inventors' experiments.

The table shown in FIG. 40 shows the relationship of "thickness of metal electrode-waveform delay amount-drive frequency". In addition, this table shows a 21-inch diagonal panel as a panel,
LQ-1802 (manufactured by Hitachi Chemical Co., Ltd.) as the alignment film 68
This is a case in which an A1-Si-Cu alloy is used as the metal electrode, and the rubbing direction is the same in the assembled liquid crystal element.

When a liquid crystal material having a spontaneous polarization of 7 nc / cm ² and a cell thickness of about 1 μm are used, as is apparent from FIG. %, The delay amount was 0.56 at a film thickness of 348 nm. When this relationship is expressed by a drive frequency of 2048 scanning lines (one frame scanning frequency), when a power source is connected to both ends of one scanning line (expressed as both-side mounting), a power source is connected to one side. It can be seen that although the connection is different (denoted as one-sided mounting), the driving frequency can be increased as the delay amount is smaller in each case.

Further, the spontaneous polarization is set to 1 for high-speed driving.
00 nc / cm ² , the cell thickness is about 2 μm, and the rounding of the waveform is reduced. In order to reduce the driving frequency to 15 Hz or less, when A1-Si-Cu is used for both-side mounting, 629 nm is used. A film thickness is required, and a one-sided mounting requires a film thickness of 2276 nm. This can be reduced by changing the type of metal. However, even when Cu is used, a film thickness of 387 nm is required for both-side mounting and 1310 nm for single-side mounting.
It is necessary to exceed 0 nm.

However, if the thickness of the metal electrode exceeds 250 nm so as to increase the drive frequency, optical differences and crosstalk occur as described above. In addition, since the cost of the power supply IC is almost twice as large between the case of mounting on both sides and the case of mounting on one side, a large difference is caused. Therefore, the structure of the liquid crystal element is preferably single-sided.

The thickness of the metal electrode is 250 n.
The restriction that the distance must be equal to or less than m is caused when the metal electrode is arranged on the surface of the transparent electrode (the surface on the side where the liquid crystal 66 is injected). Instead, a method was considered in which the metal electrode was arranged on the back surface of the transparent electrode (the surface on the side of the glass substrate) so that the thickness of the metal electrode could be freely set. The techniques are disclosed in Japanese Patent Application Laid-Open No. 2-63019 and Japanese Patent Application No. 5-158182.

Next, three manufacturing methods for manufacturing such a wiring board will be described.

First, in the first manufacturing method, as shown in FIG. 41A, a thick metal layer is formed on the surface of a glass substrate 71 by a sputtering method or the like, and the metal layer is patterned by a photolithography method or the like. A metal electrode substrate 73 having the formed metal electrode 72 is formed. Next, as shown in FIG. 41B, for example, a predetermined amount of a monomer liquid of the ultraviolet curing resin 74 is dropped on the surface of the metal electrode substrate 73 using a fixed amount dropping jig or the like.

Next, as shown in FIG.
Is pressed so as to sandwich the ultraviolet curable resin 74, and then the smoothing plate 75 and the metal electrode substrate 73 are brought into close contact with each other by pressing pressure as shown in FIG. After this, FIG.
After irradiating UV light from the smoothing plate 75 side to cure the ultraviolet curing resin 74 as shown by the arrow in (e), FIG.
As shown in (f), the smoothing plate 75 is peeled off from the metal electrode substrate 73 integrated with the ultraviolet curable resin 74 by a release device not specifically shown in the figure.

Next, as shown in FIG.
Electrode substrate 73 in which the gap between the electrodes is filled with an ultraviolet curing resin 74
Next, as shown in FIG. 41H, a transparent electrode 76 made of ITO or the like is formed and patterned so as to be electrically connected to the metal electrode 72, so that a wiring substrate 77 is obtained.

In the second manufacturing method, first, FIG.
As shown in (a), for example, a predetermined amount of a resin monomer of the UV-curable resin 74 is dropped on the surface of the smoothing plate 75 using a quantitative liquefaction jig such as a dispenser 100.

On the other hand, as shown in FIG. 42B, a color filter 78 and several μm formed thereon are separately provided.
A metal electrode substrate 73 'having a metal electrode 72 having a thickness of about m is pressed down in the direction of the arrow with the surface on which the metal electrode 72 is provided facing the smooth plate 75 as shown in FIG. As shown in FIG. 42 (d), the resin 74 is brought into contact with the smooth plate 75 so as to sandwich the resin 74 therebetween. At this time, if the adhesion between the metal electrode material forming the metal electrode 72 and the color filter material is poor, as shown in FIG.
-The underlayer 79 is often formed of a metal such as Ti.

Next, as shown in FIG. 42 (e), an integrated body 80 having a resin 74 sandwiched between a smooth plate 75 and a metal electrode substrate 73 'is placed in upper and lower press plates 81a and 81b of a press 81. Subsequently, a predetermined pressing pressure is applied to the upper holding plate 81a as shown by an arrow as shown in FIG.
And the metal electrode substrate 73 'are brought into close contact with each other. In a later step, a transparent electrode such as an ITO film is formed. However, in order to secure conductivity between the transparent electrode and the metal, the resin 74 is removed from the surface of the metal, or the resin 74 remains extremely thin. The metal electrode substrate 73 ′ is strong against the smooth plate 75,
It is necessary to uniformly adhere to the entire surface of the device.

Next, the press pressure is released, and the one piece 80
After being taken out of the press 81, the integrated object 80 is moved from the glass substrate 71 side as shown by the arrow in FIG.
The resin 74 is cured by irradiation with V light. After this, FIG.
(H) As shown in FIG.
The metal electrode substrate 73 ′ integrated with the resin 74 from FIG. 5 is peeled in the direction of the arrow to fill the gap between the metal electrodes 72 with the ultraviolet curing resin 74 as shown in FIG. To get

Finally, a transparent electrode made of ITO or the like is formed and patterned so as to be electrically connected to the metal electrode 72 to obtain a wiring substrate.

As a third manufacturing method, first, FIG.
As shown in FIG. 1A, a base film 79 having a thickness of about 1000.degree. Is formed on a transparent glass substrate 71 using a material such as Cr having a strong adhesion to the substrate 71 by a method such as a vacuum evaporation method. This is because Cu has a drawback that adhesion to the substrate 71 is small. Thereafter, a Cu wiring film 82 serving as a metal substrate is formed on the underlying film 79 to a thickness of about 1 μm. Thereafter, a photoresist 83 is applied on the Cu wiring film 82 as shown in FIG. 43B, and is exposed and developed to pattern the wiring pattern.

Next, the substrate 71 is immersed in an etching solution such as an aqueous solution of ferric chloride or an aqueous solution of cupric chloride, and the substrate 71 shown in FIG.
After etching the Cu wiring film 82 as shown in FIG. 3C, the base film 79 is etched by dipping in an etching solution such as hydrochloric acid or cerium ammonium nitrate aqueous solution.

Finally, after the gap between the Cu wiring films 82 is filled with the ultraviolet curing resin 74, a transparent electrode made of ITO or the like is formed so as to be electrically connected to the Cu wiring films 82 and patterned to obtain a wiring substrate. To

After forming the wiring board as described above,
On this wiring board, for example, a dielectric film 67 shown in FIG.
After rubbing the alignment film 68, the wiring substrate is made to face another wiring substrate formed in the same manner as the above-described manufacturing method, and finally the sealing member 65 is formed. Are bonded so as to form a gap between both substrates for enclosing the liquid crystal 66. Finally, the liquid crystal 66 is sealed in the gap to manufacture a liquid crystal element.

[0032]

However, in such a conventional wiring board and a method of manufacturing the same, a metal electrode is formed by forming a thick metal layer by vacuum film formation such as a sputtering method, and resisting the metal layer. After patterning by using, for example, a patterned metal electrode 72 as shown in FIG. 41A was formed by dry etching, but an expensive sputtering apparatus, photolithography In addition to requiring an apparatus, a dry etching apparatus, and the like, the process of forming the metal electrode substrate 73 is complicated. As a result, there is a problem that the cost of the wiring board using the metal electrode substrate 73 increases.

As a method of reducing the cost, a method of forming the metal layer by a plating method and performing the etching by a wet method can be considered. However, when the metal layer is formed by the plating method, the cost is reduced, but the adhesion between the metal electrode 72 and the glass substrate 71 is poor in the subsequent step of the release step in the flattening step using the ultraviolet curable resin. Therefore, when the smoothing plate 75 is peeled off (see FIG. 42h), there is a problem that the metal electrode 72 is peeled off from the glass substrate 71.

When the ultraviolet-curing resin is cured, U
Irradiation with V light has a problem that the color filter is damaged.

On the other hand, when the metal layer is etched by a wet etching method, the metal electrode 72 is a thick film, and as shown in FIG. 44 which is an enlarged view of FIG.
The wiring width of the Cu wiring 82 which should be originally processed to the width of the photoresist 83 is reduced by 2δ due to the side etching. Here, in the case of isotropic etching, the side etching amount δ generally satisfies δ ≧ t with respect to the Cu film thickness t.
That is, when the Cu wiring 82 is processed by the wet etching method, it becomes difficult to control the line width in the surface of the glass substrate 71, and in the worst case, the metal electrode 72 is disconnected to cause a line defect, so that the display quality is deteriorated. There was a problem of doing.

The present invention has been made to solve such a conventional problem, and it is possible to eliminate the peeling of the metal wiring at the time of the release process, and to reduce the cost of the wiring board and the wiring board. A first object is to provide a manufacturing method, a liquid crystal element using the wiring substrate, and a method for manufacturing the liquid crystal element. A wiring board capable of avoiding damage to a color filter due to UV light irradiation, a method for manufacturing a wiring board,
A second object is to provide a liquid crystal element using the wiring substrate and a method for manufacturing the liquid crystal element. Further, it is a third object of the present invention to provide a wiring board having good display quality, a method of manufacturing the wiring board, a liquid crystal element using the wiring board, and a method of manufacturing the liquid crystal element. Still another object of the present invention is to provide a wiring board having no voltage waveform delay, a method of manufacturing the wiring board, a liquid crystal element using the wiring board, and a method of manufacturing the liquid crystal element.

[0037]

According to the present invention, there are provided a plurality of auxiliary electrodes formed on the surface of a light-transmitting substrate, an insulating layer for insulating between the auxiliary electrodes, and a surface of the auxiliary electrode and the insulating layer. In the wiring board having the formed main electrode, the auxiliary electrode is formed by arranging a wiring material in a plurality of recesses formed in the insulating layer.

Further, according to the present invention, the wiring material may be Cu, Cr,
The auxiliary electrode is formed of any one of Mo, Ni, Au, Ag, and Pt or an alloy thereof, and is disposed in the recess by a plating method to form the auxiliary electrode.

Further, according to the present invention, an underlayer made of any of Pd, Ag, Au, Pt, and Mo and forming a bottom surface of the concave portion is provided between the translucent substrate and the insulating layer. An auxiliary electrode is formed on the surface of the underlayer.

Further, the present invention is characterized in that a color filter layer is provided between the light-transmitting base material and the insulating layer and at a portion outside the concave portion.

Further, the present invention is characterized in that the color filter layer is protected between the translucent substrate and the insulating layer, and a protective layer on which the underlayer is formed is provided on the surface. Things.

Further, the present invention is characterized in that the insulating layer is formed of a polymer material.

The present invention is also characterized in that the polymer material is a resin which is cured by irradiating ultraviolet rays.

According to the present invention, a plurality of auxiliary electrodes formed on the surface of the light-transmitting substrate, an insulating layer for insulating between the auxiliary electrodes, and a main electrode formed on the surface of the auxiliary electrode and the insulating layer are provided. Forming a base layer made of any of Pd, Ag, Au, Pt, and Mo on the light-transmitting substrate; and forming the light-transmitting substrate and the auxiliary electrode on the light-transmitting substrate. A step of sandwiching a polymer material between a smooth plate and a smooth plate having a convex portion corresponding to the pattern shape, and pressing the light-transmissive substrate and the smooth plate into pressure contact with each other, and between the substrate and the smooth plate. Filling a polymer material, and irradiating the polymer material with curing light so as to form an insulating layer having a plurality of concave portions corresponding to the pattern shape of the auxiliary electrode on the translucent substrate; Curing, a step of releasing the smooth plate, and a plating method. Cu in each recess of more the insulating layer, C
a step of arranging a wiring material made of any one of r, Mo, Ni, Au, Ag, and Pt or an alloy thereof to form the auxiliary electrode, and a step of forming a main electrode on the surface of the auxiliary electrode and the insulating layer And characterized in that:

Further, according to the present invention, a plurality of auxiliary electrodes formed on the surface of the light-transmitting substrate, an insulating layer for insulating between the auxiliary electrodes, and a main electrode formed on the surface of the auxiliary electrode and the insulating layer In a liquid crystal element sandwiching liquid crystal between a pair of wiring boards having the following, the wiring board forms an insulating layer having a plurality of recesses on the translucent substrate, and then forms Cu, Cr in the recesses by plating. , Mo, Ni, Au, Ag, Pt
Wherein the auxiliary electrode is formed by arranging a wiring member made of any one of the above or an alloy thereof.

The present invention also provides a plurality of auxiliary electrodes formed on a surface of a light-transmitting substrate, an insulating layer insulating between the auxiliary electrodes, and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In a method for manufacturing a liquid crystal element in which a liquid crystal is sandwiched between a pair of wiring substrates having:
g, Au, Pt, or Mo. A step of forming an underlayer made of any one of Mo and a polymer material between the translucent substrate and the smooth plate having a convex portion corresponding to the pattern shape of the auxiliary electrode. Sandwiching step, press-contacting the light-transmissive substrate and the smooth plate,
Filling the polymer material between the substrate and the smoothing plate, and forming a polymer material on the translucent substrate to form an insulating layer having a plurality of recesses corresponding to the pattern shape of the auxiliary electrode. A step of irradiating curing light to cure the polymer material, a step of releasing the smooth plate, and plating, Cu, Cr, Mo, Ni, Au,
A step of arranging a wiring member made of Ag or Pt or an alloy thereof to form the auxiliary electrode, a step of forming a main electrode on the surface of the auxiliary electrode and the insulating layer, and forming the main electrode. And filling the liquid crystal between the opposing substrates so as to sandwich the liquid crystal.

According to the present invention, a plurality of auxiliary electrodes formed on the surface of the light-transmitting substrate, an insulating layer for insulating between the auxiliary electrodes, and a main electrode formed on the surface of the auxiliary electrode and the insulating layer are provided. Wherein the insulating layer is formed to have a plurality of recesses by using a lift-off method, and the auxiliary electrode is formed by disposing a wiring material in the plurality of recesses. Things.

Further, the present invention is characterized in that the insulating layer contains SiO ₂ as a main component, while using organic silane as a raw material of the insulating layer.

The present invention also provides a plurality of auxiliary electrodes formed on a surface of a light-transmitting substrate, an insulating layer insulating between the auxiliary electrodes, and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In the wiring board having, an underlayer formed by a sputtering method on the surface of the translucent substrate, and an auxiliary electrode formed by a wiring material disposed on the underlayer by an electric pattern plating method, Wherein the underlayer is patterned by wet etching using the wiring material as an etching resist.

The present invention is also characterized in that the surface of the auxiliary electrode is covered with an antioxidant metal film by an electroplating method.

After forming an insulating layer having a plurality of recesses on the surface of the light-transmitting substrate as in the present invention, the C
By disposing a wiring material made of any one of u, Cr, Mo, Ni, Au, Ag, and Pt or an alloy thereof by a plating method to form an auxiliary electrode, the peeling of the metal electrode during the release step can be prevented. In addition to eliminating it, the etching is not required.

Further, by forming an insulating layer having a plurality of concave portions by using a lift-off method and forming a wiring material in the concave portions by using an electrolytic plating method, it is possible to obtain a wiring substrate without using a UV curing resin. To avoid damage to the color filter due to UV light irradiation,
Eliminate the step of peeling off the cured resin.

A wiring material is disposed on a base layer formed by a sputtering method on the surface of a light-transmitting substrate to form an auxiliary electrode by an electric pattern plating method.
By performing patterning by wet etching using a wiring material as an etching resist, a decrease in pattern accuracy due to side etching is prevented.

[0054]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1 is a sectional view showing a structure of a liquid crystal element using a wiring board according to the first embodiment of the present invention.
In the figure, 1 is a liquid crystal element, 2 is a wiring board, 3 is a liquid crystal, 4 is a sealing material, and 5 is a spacer. Here, the wiring substrate 2 includes a glass substrate 6 as a translucent substrate, a transparent electrode 7 as a main electrode, and a metal electrode 10 as an auxiliary electrode.
And an ultraviolet curable resin film 11 forming an insulating layer for insulating between the metal electrodes 10. Note that an insulating film 8 and an alignment film 9 are formed on the wiring board 2.

Next, a method of manufacturing a wiring board according to a second embodiment of the present invention for manufacturing the wiring board 2 having such a configuration will be described.

In this embodiment, first, as shown in FIG. 2, after the surface of the glass substrate 6 is degreased, an underlayer 6a is formed to impart conductivity. Here, the method of degreasing treatment includes solvent treatment, emulsification degreasing (emulsion degreasing), alkali degreasing, electrolytic degreasing, mechanical degreasing, and the like, and any of these methods removes dirt adhering to the surface of the glass substrate 6.

The glass substrate 6 used in the present invention has a thickness of about 1 mm, which is widely used for liquid crystal substrates, and may be made of a general material such as soda glass (blue plate glass), and both surfaces are polished. A good parallelism is preferred.

As the underlayer 6a, a layer for imparting conductivity to the surface of the insulating glass substrate 6 can be used as appropriate.
Examples of the metal layer include Pd, Ag, Au, Pt, and Mo.
Can be formed by a plating method, a vapor deposition method, or the like. The underlayer 6a only needs to have a thickness capable of forming a metal electrode on the underlayer 6a by plating.
To 1000 °, preferably 1 to 500 °. When the thickness is such a value, the resistance value of the underlayer 6a is sufficiently larger than that of the metal electrode 10 and there is no possibility of a short circuit. However, the underlayer 6a can be separated by using a laser or the like. .

Next, as shown in FIG. 3, a predetermined amount of the ultraviolet curable resin 11a is dropped on the glass substrate 6 on which the underlayer 6a is formed using a fixed amount dropping jig such as a dispenser (see FIG. 42a). As shown in FIG. 4, a smooth plate 12 having a convex portion 12a in the form of a metal wiring pattern is brought into contact with an ultraviolet curable resin 11a.

Next, an integrated body sandwiching the ultraviolet curable resin 11a between the smoothing plate 12 and the glass substrate 6 on which the underlayer 6a is formed is brought into close contact with a press-contact means such as a press machine (see FIG. 42e). Thereafter, as shown in FIG. 6, the integrated body 13 as shown in FIG. 5 is irradiated with UV light from the smoothing plate 12 side to cure the ultraviolet curing resin 11a.

Next, as shown in FIG. 7, after the smoothing plate 12 is peeled off from the integrated body 13 by a release device not specifically shown in the figure, the ultraviolet curing resin 11a is cured to form the ultraviolet rays. As shown in FIG. 8, three metal layers of Ni, Cu, and Ni are formed by plating on the concave portions S formed in a pattern between the cured resin films 11, that is, on the base layer 6 a that forms the bottom surface of the concave portions S. The metal electrode 10 is formed, and a metal electrode substrate 14 is obtained. Then, as shown in FIG. 9, a transparent electrode 7 made of ITO or the like is formed on the metal electrode substrate 14 (the surfaces of the metal electrode 10 and the ultraviolet curable resin film 11) and patterned so as to be electrically connected to the metal electrode 10. As a result, a low-resistance wiring board 2 is obtained.

After forming the wiring substrate 2 in this manner, an insulating film 8 and an alignment film 9 are formed on the transparent electrode 7 of the wiring substrate 2, and after rubbing the alignment film 9, This wiring board 2 and another wiring board 2 formed in the same manner as the manufacturing method described above are opposed to each other with a spacer 5 interposed therebetween. Finally, a liquid crystal 3 is sealed between the two substrates 2 by a sealing material 4. Glue to form a gap. Finally, the liquid crystal 3 is sealed in this gap, and the manufacture of the liquid crystal element 1 is completed.

Here, the material of the smoothing plate 12 used in the present invention may be any material as long as it is a plate made of metal, glass, ceramics, plastic or the like. Further, as a method of forming the convex portion 12a having a pattern shape corresponding to the metal electrode 10 on the surface of the smoothing plate 12, a method of precision cutting a metal made of copper, phosphor bronze, brass, aluminum, nickel, or the like, or glass After forming a metal on ceramics, plastics, or the like by vapor deposition or plating, a method of patterning the metal into a predetermined shape can be used.

On the other hand, the ultraviolet curable resin 11 used in the present invention
a is a mixture of a UV-curable resin monomer, an oligomer and a photoinitiator, and may be a polymer material of any polymerization system such as an acrylic type, an epoxy type, and an ene / thiol type,
It is necessary to have heat resistance, chemical resistance, washing resistance, and the like that can withstand the ITO sputter film forming step and the alignment film baking step, which are liquid crystal substrate forming steps. For example, those obtained by introducing a heat-resistant molecular structure into the reactive oligomer which is the main component, and those obtained by increasing the crosslink density by a polyfunctional monomer are preferable.

Although the light for curing the ultraviolet curable resin 11a is limited to the UV light, the wavelength of the light to be used is not limited to this. Anything is fine. Therefore, the resin used should match the wavelength of the light used.

Further, the metal electrode 10 used in the present invention can be appropriately selected from metals that can be plated and can be used as the metal electrode 10.
Examples thereof include r, Mo, Ni, Au, Ag, Pt and alloys of these metals. The plating method of these metals and alloys can be appropriately selected from electroless plating (chemical plating) and electrolytic plating, but electroless plating which is excellent in uniformity of the thickness of the plated metal electrode is preferable.

The pressing means used in the present invention is not limited as long as it can uniformly spread the ultraviolet-curable resin 11a over the area of the glass substrate 6. For example, a pressing machine using a hydraulic cylinder or an air cylinder, a liquid pressing machine, A roll press machine or the like can be used as appropriate. By pressing and heating the object to be pressed as shown in FIG. 5 by heating through an electric heater or a heating fluid during pressing, the viscosity of the resin is reduced and the resin is easily spread, which is preferable.

Further, an ultraviolet lamp (not shown) which is a light source of UV light used in the present invention is, for example, a high pressure mercury lamp,
Any material such as a low-pressure mercury lamp or a xenon lamp may be used as long as it cures the ultraviolet-curable resin 11a to be irradiated, and its output is preferably an illuminance sufficient for curing.

Next, one example of the method of manufacturing a wiring board according to the present embodiment will be described.

In this embodiment, the size is 300 × 31
The surface of the 0 mm double-side polished soda lime glass 6 was washed with a neutral detergent, and then subjected to an alkali degreasing treatment. Next, Pd
Chemical plating was performed for 1 minute at room temperature using the solution, and Pd was formed as a base layer 6a on the glass substrate 6 to a thickness of 20 ° (see FIG. 2).

After the underlayer forming step is completed, an ultraviolet curable resin (composition) comprising 50 parts by weight of pentaerythritol triacrylate, 50 parts by weight of neopentyl glycol diacrylate, and 2 parts by weight of 1-hydroxycyclohexyl phenyl ketone 11a was dropped on a base layer 6a formed on the glass substrate 6 by a dispenser (see FIG. 3).

Next, a 2 μm-thick Cr film is formed as a projection 12 a on a double-side polished glass substrate having a size of 300 × 310 mm by a sputtering method, and a photolithographic etching method is used to form a stripe having a pitch of 320 μm and a Cr width of 20 μm. The smooth plate 12 having the pattern of
Is deposited on the underlayer 6a formed on the glass substrate 6,
It was slowly in contact with air bubbles so as not to be caught, and left (see FIG. 4).

Then, after the step of sandwiching the resin 11a, which is a polymer material, between the smoothing plate 12 and the glass substrate 6 is completed, a separately prepared 1-ton roll press machine is used.
An integrated body 13 of the smooth plate 12 and the glass substrate 6 on which the base layer 6a is formed is installed, and the resin 11a is filled between the smooth plate 12 and the glass substrate 6 by pressing at a feed rate of 30 cm / min and a pressing pressure of 700 kg. (See FIG. 5).

Next, after the step of filling the resin 11a between the smooth plate 12 and the glass substrate 6 is completed,
UV light irradiation was performed for 2 minutes by an ultraviolet lamp composed of four separately prepared 100 W high-pressure mercury lamps (see FIG. 6), and the smoothing plate 12 was peeled off from the integrated member 13 by a release jig (see FIG. 7). ).

After the smoothing plate 12 has been released from the mold, a chemical plating treatment is performed at 80 ° C. for 2 minutes using a Ni solution, and the bottom surface of the concave portion S formed in a pattern between the ultraviolet curing resin films 11 is formed. Ni was formed as a first metal layer to a thickness of 2000 ° on a 20 μm-wide stripe-shaped base layer 6a. Then, after washing with water and drying, 200 ° C 30
Annealing for a minute. Further, after a treatment with diluted hydrochloric acid at room temperature for 1 minute, a chemical plating treatment was carried out at 80 ° C. for 30 minutes using a Cu solution to form Cu as a second layer metal on Ni at a thickness of 16000 °. Then, it was washed with water. Further, a chemical plating treatment was performed at 80 ° C. for 2 minutes using a Ni solution, and Ni was deposited on Cu as a third layer metal by 200 μm.
The metal electrode substrate 14 was formed with a thickness of 0 ° (see FIG. 8). Here, when the surface of the metal electrode substrate 14 was observed with a microscope, disconnection and peeling of the metal electrode 10 were not observed at all.

After the step of forming the metal electrode 10 is completed, the pitch is set to 320 μm and the ITO film width is set to 300 μm according to the metal electrode pattern of the metal electrode substrate 14.
The transparent electrode 7 was formed on the surface of the substrate 14 by a photolithographic etching method to form the wiring substrate 2 (see FIG. 9).
Here, the cost of the wiring board 2 was reduced to 1/5 as compared with the conventional method. When the resistance value of the pattern length of the wiring board 2 was measured, the resistance value showed a low resistance value of 300Ω or less.

Further, after the step of forming the transparent electrode 7 is completed, an insulating film 8 and an alignment film 9 are formed on the wiring substrate 2, and the two wiring substrates 2 are opposed to each other and the liquid crystal 3 is formed. The liquid crystal element 1 is formed by a process of filling the liquid crystal 3 between the substrates 2 so as to sandwich the liquid crystal 3. Here, in the liquid crystal element 1 manufactured as described above, the inversion of the liquid crystal molecules can be uniformly performed at the time of driving the liquid crystal, and the display quality is improved.

Furthermore, since the wiring substrate 2 uses not only the transparent electrode 7 but also the metal electrode 10, the resistance value of the electrode is reduced. As a result, the liquid crystal element 1 using the wiring substrate 2 has a ferroelectric property. Despite being a liquid crystal element, the delay of the voltage waveform was reduced. Further, since it is not necessary to increase the thickness of the transparent electrode 7, the transmittance of the transparent electrode 7 does not decrease and the electrode 7 is not recognized. Further, since the metal electrode 10 is formed on the back side of the transparent electrode 7, there is no unevenness in the alignment film 9 and there is no concern about optical difference and crosstalk.

Next, a method of manufacturing a wiring board according to the third embodiment of the present invention will be described.

In this embodiment, as in the second embodiment described above, the ultraviolet curable resin 11a is
Instead of dropping on the glass substrate 6 on which is formed, an ultraviolet curable resin 11a is first dropped on a smooth plate 12 having a convex portion 12a formed in a pattern as shown in FIG. 11, the glass substrate 6 on which the underlayer 6a is formed is brought into contact with liquid from above.

Next, an example of this embodiment will be described.

In this embodiment, an ultraviolet curable resin 11a is first dropped on a smooth plate 12 having a convex portion 12a formed in a pattern (see FIG. 10), and then a glass on which a base layer 6a is formed is formed. The substrate 6 was brought into contact with the liquid from above (FIG. 11).
reference).

Except for the step of dropping the ultraviolet curable resin 11a on the smoothing plate 12 and then contacting the glass substrate 6 on which the underlayer 6a is formed, the process is exactly the same as that of the first embodiment. Metal electrode substrate 1 as shown in FIG.
4 was created. Here, when the surface of the metal electrode substrate 14 was observed with a microscope, disconnection and peeling of the metal electrode 10 were not observed at all.

The pitch is 320 μm and the ITO film width is 300 μm in accordance with the metal electrode pattern of the metal electrode substrate 14.
A transparent electrode 7 having a thickness of μm was formed on the surface of the substrate 14 by a photolithographic etching method to form a wiring substrate 2 as shown in FIG. Here, the cost of the wiring board 2 was reduced to 1/5 as compared with the conventional method. Also,
When the resistance value of the pattern length of the wiring board 2 was measured, the resistance value showed a low resistance value of 300Ω or less.

Further, when the insulating film 8 and the alignment film 9 are formed on the wiring substrate 2 and the liquid crystal element 1 is formed using the two wiring substrates 2, the inversion of the liquid crystal molecules is uniform when the liquid crystal is driven. And the display quality of the liquid crystal element 1 is improved.

Further, since the wiring board 2 uses not only the transparent electrode 7 but also the metal electrode 10, the resistance value of the electrode is reduced. As a result, the liquid crystal element 1 using the wiring board 2 is ferroelectric. The delay of the voltage waveform was reduced despite the fact that the liquid crystal element was a liquid crystal element. Further, since it is not necessary to increase the thickness of the transparent electrode 7, the transmittance of the transparent electrode 7 does not decrease and the electrode 7 is not recognized. Further, since the metal electrode 10 is formed on the back side of the transparent electrode 7, there is no unevenness in the alignment film 9 and there is no concern about optical difference and crosstalk.

Next, a method for manufacturing a wiring board according to the fourth embodiment of the present invention will be described.

In this embodiment, as shown in FIG. 12, after forming an underlayer 6a on a glass substrate 6,
A color filter 16 is previously formed on a in a pattern by a method such as a photolithography method, a printing method, a sublimation transfer method, and an ink jet method. Next, an ultraviolet curable resin film 11 is formed on the color filter 16 in the same manner as in the example of the second embodiment. Next, as shown in FIG. 13, the glass substrate 6 on which the color filter 16 is formed
As described above, the metal electrode 10 is formed by the plating method,
A metal electrode substrate 14 'is obtained. Further, as shown in FIG. 14, a transparent electrode 7 is formed on the metal electrode substrate 14 'and patterned to form a wiring substrate 2' incorporating a color filter function.
To get

Next, an example of this embodiment will be described.

In this embodiment, a pigment-based color filter (made by Ube Industries) 16 is provided on the pattern portion where the metal electrode 10 is not formed on the underlayer 6 a formed on the glass substrate 6, that is, on the portion deviated from the concave portion S. It is formed with a thickness of about 1 μm by a photolithographic etching method that is often used (see FIG. 12). Except for the step of forming the color filter 16 as described above, the metal electrode substrate 14 'was formed by the same steps as in the example of the first embodiment. Here, when the entire surface of the metal electrode substrate 14 'was observed with a microscope, no disconnection or peeling of the metal electrode 10 was observed at all.

A transparent electrode 7 having a pitch of 320 μm and an ITO film width of 300 μm is formed on the surface of the substrate 14 ′ by photolithographic etching in accordance with the pattern of the metal electrode 10 on the metal electrode substrate 14 ′. (See FIG. 14).

Here, as compared with the conventional method, the cost of the wiring board 2 'was reduced to 1/5. When the resistance value of the pattern length of the wiring board 2 ′ was measured, the resistance value showed a low resistance value of 300Ω or less.

In addition, an insulating film 8 and an alignment film 9 are formed on the wiring substrate 2 ′ and a color liquid crystal element is formed using the two wiring substrates 2. And the display quality of the color liquid crystal element is improved.

Further, since the wiring board 2 'uses not only the transparent electrode 7 but also the metal electrode 10, the resistance value of the electrode is reduced. As a result, the liquid crystal element 1 using the wiring board 2' is strong. Despite being a dielectric liquid crystal element, the delay of the voltage waveform is reduced. Further, since it is not necessary to increase the thickness of the transparent electrode 7, the transmittance of the transparent electrode 7 does not decrease and the electrode 7 is not recognized. Furthermore, this metal electrode 10
Since it is formed on the back side of the transparent electrode 7, there is no unevenness in the alignment film 9, and there is no concern about optical difference and crosstalk.

Next, a method for manufacturing a wiring board according to the fifth embodiment of the present invention will be described.

In the present embodiment, as shown in FIG. 15, after the color filter layers 16 and 17 are provided on the glass substrate 6 in advance, the underlayer 6a is formed, and the surface of the underlayer 6a is formed on the underlayer 6a. As described above, the ultraviolet curable resin film 11
Is formed, a metal electrode 10 is formed by a plating method,
A metal electrode substrate 14 "as shown in FIG. 16 is obtained.
Further, as shown in FIG. 17, the transparent electrode 7 is formed and patterned to obtain the wiring substrate 2 ″ incorporating the color filter function.

Here, when the color filter 16 of the ink jet method is used, the receiving layer 17 is coated on the entire surface of the glass substrate 6 in advance by spin coating or the like, and the dye ink is blown over the receiving layer 17 with high precision. This is effective in the case of a method of infiltrating into the 17.

Next, an example of this embodiment will be described.

In this embodiment, for example, a hydrophilic acrylic ink receiving layer 17 is formed to a thickness of 0.8 μm on the surface of the glass substrate 6 used in the embodiment of the first embodiment by spin coating. A water-based color filter dye ink (Canon) 16 having a pitch of 320 μm by an ink jet printer for color filters (Canon).
m, and a line width of 300 μm, soaked into the receiving layer 17, and further cured by heating at 200 ° C. for 30 minutes (see FIG. 15).

After the color filter forming step is completed, Pd is formed on the surface by chemical plating, and the metal electrode substrate 14 is formed by the same steps as those of the first embodiment. (See FIG. 16). Here, when the entire surface of the metal electrode substrate 14 "was observed with a microscope, no disconnection or peeling of the metal electrode 10 was observed.

A transparent electrode 7 having a pitch of 320 μm and an ITO film width of 300 μm is formed on the surface of the substrate 14 ″ by photolithography / etching in accordance with the pattern of the metal electrode 10 of the metal electrode substrate 14 ″. (See FIG. 17).

Here, the cost of the wiring board 2 ″ was reduced to 1/5 as compared with the conventional method. The resistance value of the pattern length of the wiring board 2 ″ was measured. The value showed a low resistance value of 300Ω or less.

In addition, an insulating film 8 and an alignment film 9 are formed on the wiring substrate 2 ″, and a color liquid crystal element is formed using the two wiring substrates 2. And the display quality of the color liquid crystal element is improved.

Further, since the wiring substrate 2 "uses not only the transparent electrode 7 but also the metal electrode 10, the resistance value of the electrode is reduced. As a result, the liquid crystal element 1 using the wiring substrate 2" In addition, the delay of the voltage waveform is reduced in spite of the ferroelectric liquid crystal element. Further, since it is not necessary to increase the thickness of the transparent electrode 7, the transmittance of the transparent electrode 7 does not decrease and the electrode 7 is not recognized. Furthermore, the metal electrode 10
Is formed on the back side of the transparent electrode 7, there is no unevenness in the alignment film 9, and there is no fear of optical difference or crosstalk.

Next, a method for manufacturing a wiring board according to the sixth embodiment of the present invention will be described.

In the present embodiment, as shown in FIG. 18, the color filter layers 16 and 1 are formed on the surface of the glass substrate 6.
7 is provided in advance, a protective layer 18 is further provided thereon, a base layer 6a is formed, and after forming an ultraviolet curable resin film 11, a metal electrode 10 is formed by plating. Such a metal electrode substrate 14A is prepared. Further, as shown in FIG. 20, the transparent electrode 7 is formed and patterned to obtain a wiring substrate 2A incorporating a color filter function. In this case, when the metal electrode 10 is formed by a photolithography method that is commonly used,
This has the effect of preventing the color filter from being decolorized by an etching solution such as an acid.

Next, an example of this embodiment will be described.

In this embodiment, for example, an ink jet color filter 16 is formed on the surface of the glass substrate 6 used in the embodiment of the first embodiment by the same method as in the embodiment of the fourth embodiment. And a protective layer 1 on the surface.
As No. 8, a polyamide transparent coating agent (manufactured by Ube Industries, Ltd.) was prepared by spin coating and baking to a thickness of about 0.5 μm (see FIG. 18).

After the step of forming the protective layer 18 is completed, the underlayer 6a is formed, and thereafter, the metal electrode substrate 14A is formed by the same steps as in the example of the first embodiment. (See FIG. 19). When the entire surface of the metal electrode substrate 14A was observed with a microscope, no disconnection or peeling of the metal electrode 10 was observed.

Further, a transparent electrode 7 having a pitch of 320 μm and an ITO film width of 300 μm is formed on the surface of the substrate 14A by a photolithographic etching method in accordance with the pattern of the metal electrode 10 of the metal electrode substrate 14A to form the wiring substrate 2A. It was produced (see FIG. 20).

Here, as compared with the conventional method, the cost of the wiring board 2A was reduced to 1/5. When the resistance value of the pattern length of the wiring board 2A was measured, the resistance value showed a low resistance value of 300Ω or less.

In addition, an insulating film 8 and an alignment film 9 were formed on the wiring substrate 2A and a color liquid crystal element was formed using the two wiring substrates 2. When the liquid crystal was driven, the inversion of liquid crystal molecules was uniform. And the display quality of the color liquid crystal element was improved.

Further, since the wiring board 2A uses not only the transparent electrode 7 but also the metal electrode 10, the resistance value of the electrode is reduced. As a result, the liquid crystal element 1 using the wiring board 2A is ferroelectric. The delay of the voltage waveform was reduced despite the fact that the liquid crystal element was a liquid crystal element. Further, since it is not necessary to increase the thickness of the transparent electrode 7, the transmittance of the transparent electrode 7 does not decrease and the electrode 7 is not recognized. Furthermore, the metal electrode 10
Is formed on the back side of the transparent electrode 7, there is no unevenness in the alignment film 9, and there is no fear of optical difference or crosstalk.

That is, as in the method of manufacturing the wiring board according to the second to sixth embodiments described above, the ultraviolet curing resin film 11 is formed on the glass substrate 6 in advance, and then the metal electrode 10 is formed by plating. Is formed, the peeling of the metal electrode 10 at the time of the releasing step is eliminated, and the metal electrode 10 can be formed by a low-cost plating method.

Further, since the etching is not required, the disconnection of the metal electrode 10 does not occur, so that the line defect due to the disconnection is eliminated, and the display quality can be kept good. Further, by forming the metal electrode 10 between the transparent electrode 7 and the glass substrate 6, the metal electrode 10 can be formed to have a thickness of 250 nm or more, and the problem of the voltage waveform delay can be solved. In addition, by forming a color filter in advance, a low-resistance wiring board 2 ″, 2A having a color filter function can be manufactured. If these wiring boards 2 ″, 2A are used, the liquid crystal element has the above-described effect. In addition, colorization can be achieved at the same time.

Next, a seventh embodiment of the present invention will be described.

FIG. 21 is a sectional view of a main part of a wiring board according to the present embodiment. In FIG. 21, reference numeral 22 denotes a color filter, reference numeral 23 denotes a glass substrate which is a light-transmitting base material, and reference numeral 24 denotes, for example, Mo. 25, a metal electrode formed of a good conductive metal, for example, Cu; 26, a flattening layer formed of an insulator formed between wiring patterns to be described later; and 27, a transparent electrode. .

The flattening layer 26 is formed on the glass substrate 2
As shown in FIG.
8 and apply resist 28 only to the portion where the film is to be finally formed.
After the baking and developing treatments are performed to remove the film, a film is formed on the entire surface of the substrate, and then the resist is peeled off, thereby removing the unnecessary portion of the film together with the resist 28 from the substrate to form a film on the necessary portion. Only the formed film is left on the glass substrate 23, and is manufactured by a lift-off method that enables selective film formation.

Next, a description will be given of a method of manufacturing a wiring board according to an eighth embodiment of the present invention for manufacturing a wiring board having such a configuration.

First, as shown in FIG. 22, on a glass substrate 23 on which a color filter 22 is mounted, an Mo underlayer 24 serving as an underlayer of a wiring material is formed by sputtering to a thickness of 200 nm. A resist 28 is formed in a wiring pattern on the ground layer 24 by a photolithography method. Thereby, the resist 28 other than the wiring forming portion is removed.
At this time, the film thickness of the resist 28 is 2 μm, which is the thickness of a wiring material described later. In the present embodiment, C
The u thin film is used as the wiring material, but since the Cu thin film has low adhesion to the color filter material, Mo is used as the underlayer 24 so as to ensure the adhesion to the color filter material.

Here, when a material having excellent adhesion to the color filter material is used as the wiring material, needless to say, it is not necessary to use a dissimilar metal for the underlayer 24. In that case, the wiring material can be formed thin. I just need. Further, in the present embodiment, the Mo thin film is formed by a sputtering film forming method, but another film forming method, for example, a vapor deposition method, a plating method, a CVD method, or the like may be used. Further, since the thickness of the underlayer 24 is for enhancing the adhesion between the wiring material and the color filter material, it is necessary to appropriately select the material when the material changes.

In the present embodiment, the resist 28
Negative resist (OMR-85, 45cp manufactured by Tokyo Ohka)
The purpose of this is to prevent the resist 28 from being deteriorated by a plating solution in a later plating step. Note that no problem occurs even if a positive resist is used as the resist 28.

On the other hand, after forming the resist 28, the glass substrate 23 is heated in order to dry the resist 28. In this heating step, the maximum temperature is set at 140 ° C. It does not cause high temperature damage to the material.

Next, after the step of forming such a wiring pattern is completed, the Mo underlayer 24 is etched by wet etching as shown in FIG. 23, and the etching solution is washed away with pure water. Thereby, M other than the wiring forming portion
o The underlayer 24 is removed. The etching conditions at this time are as follows.

Etching solution: K ₃ [Fe (CN) ₆ ] 300 g: NaOH 48 g: H ₂ O 1000 g Etching temperature: 25 ° C. Etching time: 10 sec And Mo under the above etching conditions When the underlayer 24 was etched, the etching was completed in a short time because the film thickness was small. Further, during this etching, almost no undercut due to over-etching occurred.

As described above, by etching only the thin Mo underlayer 24 in the etching step, the occurrence of undercut can be suppressed, and the electrical characteristics of the wiring can be secured. Although a wet etching method is employed in this embodiment, a dry etching method using a plasma reaction may be employed.

Next, the glass substrate 2 from which the resist 28 and the Mo underlayer 24 other than the wiring forming portions have been removed as described above.
3 is placed in a plasma CVD apparatus 30 shown in FIG. 24 to form a flattening film. Here, the plasma CVD apparatus 30 includes a reaction vessel 31 containing a glass substrate 23, a vacuum pump (not shown) for evacuating the air in the reaction vessel 31, and a mass flow controller 32 (hereinafter, referred to as Ar + O ₂ gas). An oven 35 equipped with a heater 33 for heating and gasifying TEOS, which is a kind of organosilane, and an MFC 34 for TEOS for introducing the gasified TEOS into the reaction vessel 31;
A power supply 36 is provided.

When a flattening film is formed, the glass substrate 23 is first placed on the anode electrode 36a provided in the reaction vessel 31, as shown in FIG. Is evacuated as indicated by an arrow, and the pressure inside the reaction vessel 31 is set to 10E-3 Pa. Thereafter, the Ar + O ₂ gas is introduced into the reaction vessel 31 from the Ar + O ₂ gas line Lg while controlling the flow rate by the MFC 32.

Next, the TEOS is heated and gasified in the oven 35 by the heater 33 in the oven 35, and the gasified TEOS is introduced into the reaction vessel 31 while controlling the flow rate by the MFC 34 for TEOS.

When the pressure in the reaction vessel 31 has settled to a predetermined vacuum value, an RF electric field is applied to the cathode electrode 36b from the RF power source 36, and plasma discharge is performed in the space between the cathode electrode 36b and the anode electrode 36a. And reacts and decomposes the TEOS gas to form an anode substrate 36a
SiO ₂ is deposited on the glass substrate 23 provided above. The deposition conditions at this time are as shown below.

Film forming pressure: 10E-1 Pa Ar + O ₂ flow rate: 50 sccm (Ar: 25 sccm + O)
₂ : 25 sccm) TEOS flow rate: 0.5 sccm Substrate temperature: not measured but not measured RF power: 1 W / cm ² Film formation time: .. 5 min Here, in order to perform long-distance migration on the surface of the glass substrate 23 in the step of generating SiO ₂ , the TEOS resist 28 of the glass substrate 23 shown in FIG.
Then, the color filter 22 having no Mo underlayer 24 flows into the exposed concave portion S and fills the concave portion S. Thereby, a barrier made of an insulator is formed between the wiring patterns.

By forming the SiO ₂ in the recesses S by the plasma discharge, the thickness of the SiO ₂ depends on the thickness of the resist. Becomes possible. By thus increasing the thickness control of the SiO _2, film thickness of the SiO ₂ selectively wiring material by electrolytic plating Mo underlayer 24 exposed by removing the resist 28, as will be described later fraction By forming only this, a metal wiring board with good flatness and film thickness controllability can be obtained. To deposit SiO ₂ on the glass substrate 23, TEOS gas and ozone may be mixed.

Next, as described above, SiO ₂ as an insulator is deposited only on the color filter 22 of the glass substrate 23, and as shown in FIG. 25, a flattening layer 26 serving as a barrier formed of SiO ₂ and a resist are formed. 28 are flush with the top. When the SiO ₂ reaches the same level as the top of the resist 28, the supply of TEOS is stopped, and the generation of SiO ₂ is terminated.

Then, after the step of forming the flattening layer 26 having the plurality of concave portions S is completed, the glass substrate 23 is taken out of the plasma CVD device 30 and thereafter,
The glass substrate 23 is immersed in a resist stripper to remove the resist 28 as shown in FIG. Here, when the resist 28 is removed in this manner, the Mo underlayer 24 is exposed as shown in FIG. The resist 28
Are as follows.

Resist stripping solution: stripping solution 502A (manufactured by Tokyo Ohka) Liquid temperature: 100 ° C. Immersion time: 3 minutes Cleaning: IPA ultrasonic wave Then, the glass substrate 23 with the Mo underlayer 24 exposed is placed in a plating tank 40 as shown in FIG. 27, and only the Mo underlayer 24 on the substrate 23 is electroplated. To C
u film is selectively grown. Specifically, the glass substrate 2
After the emulsion 3 is washed with an emulsion, the surface of the glass substrate 23 on which the Mo underlayer 24 is formed is fixed with a jig 43 for a cathode substrate via a heart ring cell 41 so as to face the anode electrode 42 and immersed in a plating solution 44. .

After that, the Mo underlayer 2 on the glass substrate 23
A DC current is supplied from the DC power supply 45 between the anode electrode 4 and the anode electrode 22 to form the Cu film 25 only on the Mo underlayer 24.
Here, when a DC current is supplied as described above, the Cu film 2
5 does not grow on the planarization layer 26, so that the Cu film 25
o It can be grown only in the thickness direction of the underlayer 24. As a result, as shown in FIG. 28, Cu serving as a metal electrode is formed only on the wiring pattern partitioned by the planarization layer 26.
The film 25 is provided, whereby the metal electrode substrate 29 is formed.

The plating conditions at this time are as follows.

[0139] plating solution _{···· CuSO 4 · 5H 2 O 50g} ···· H 2 O 1000g ···· NaCl 50ppm liquid temperature · · · · · · 25 ° C. Current density ···· 5A / ft ² Forming time... 5 min Here, NaCl in the plating solution 24 is an additive for stabilizing Cu deposition by Cl ions and preventing generation of minute projections and the like.

Next, when the Cu film 25 reaches the same plane as the top of the flattening layer 26, the step of forming the metal electrode 25 by plating is completed, and finally, the Cu film An ITO film 27 is formed on the surface of a metal electrode substrate 29 obtained by forming the Mo film 25 only on the Mo underlayer 24, and FIG.
1 is manufactured.

After the formation of the ITO film 27 in this manner, a liquid crystal element is manufactured through a process of facing the wiring substrate 2 and filling the space between the substrates 2 so as to sandwich the liquid crystal.

By the way, a step between the flattening layer 26 and the Cu film 25 in the wiring board 2 having the above-described configuration is randomly selected at 100 points in a 100 mm square substrate, and the step is measured with a step measuring device (a needle pressure of 3 mg, manufactured by Alpha Step Tencor). When measured, the maximum variation was 15 nm.

Here, after the flattening layer 26 is formed by the lift-off method described above, the resist 28 is removed, and the Cu film 25 is formed by the electrolytic plating method, so that the ultraviolet curable resin is not used. The wiring board 2 can be formed by the above-described method, and therefore, the color filter 22 can be prevented from being damaged by UV light irradiation. Further, since no ultraviolet curable resin is used, the cured resin is peeled off (FIG. 42).
h) to avoid mechanical damage,
A complicated process from the film formation of the metal wiring to the planarization process using an ultraviolet curable resin can be easily performed.

[0144] Further, if a vacuum process is applied to the substrate processing, the sputtering method is normally used for the metal electrode forming substrate size has a great influence on the production equipment, but a vacuum process according to the present invention is the SiO ₂ formed In addition to the accompanying CVD method, the CVD method involving the formation of SiO ₂ only requires adjusting the vacuum chamber to the size of the substrate, and requires little adjustment of electrodes and the like. For the above reasons, the development on a large-diameter substrate can be easily performed by using the wet etching / plating method.

In this embodiment, TEOS is vaporized and used as a raw material for forming SiO _2. However, other organic silane materials, such as TMS and polysilazane, as well as organic silazane and inorganic silazane materials may be used during decomposition. Due to the migration property, it is possible to obtain a buried substrate with good flatness by forming a flattening layer by vaporizing them and using them in the other steps according to the embodiment of the present invention. Of course.

Next, a ninth embodiment of the present invention will be described.

FIG. 29 is a diagram showing a cross section of the wiring board according to the present embodiment in a state before a transparent electrode is formed.
In the figure, reference numeral 51 denotes a glass substrate which is an example of a translucent material; 52, an underlayer mainly composed of Mo formed on the glass substrate 51 by sputtering; and 54, a metal electrode formed by electroplating. Is a planarizing layer which is an insulating layer formed of an ultraviolet curable resin.

Here, the underlayer 52 acts to strengthen the adhesion between the glass substrate 51 and the Cu layer 54 and is used as an electrode when the Cu layer 54 is subjected to electric pattern plating. As for the electrode for plating, it is more efficient to reduce the electric resistance by increasing the thickness of the underlayer 52 as much as possible, but if it is too thick, the amount of side etching increases when Mo is subjected to pattern etching, and the pattern accuracy deteriorates. This can cause

The amount of side etching of the underlayer 52 was examined by changing the thickness of the underlayer 52 in the range of 1000 ° to 1 μm. As a result, the electroplating of the Cu layer 54 was efficiently performed, and the line by the side etching was used. Change width by 1
In the present embodiment, the thickness of the underlayer 52 is set in the range of 1000 ° to 5000 ° so as to keep the thickness below μm.

Next, a method of manufacturing a wiring board according to the tenth embodiment of the present invention for manufacturing a wiring board having such a configuration will be described.

First, as shown in FIG.
An underlayer 52 mainly composed of Mo is formed to a thickness of 1000.degree. The main sputtering conditions at this time were a sputtering Ar pressure of 0.6.
(Pa) and input power DC 3.5 w / cm ³ .

Next, after this underlayer forming step, as shown in FIG. 31, a plating-resistant resist 53 is applied on the underlayer 52 so that plating does not adhere in a later-described plating step. Development is performed to pattern the plating prevention resist pattern. At this time, the thickness of the resist 53 is 1.5 μm. In the present embodiment, an alkali-soluble negative resist OFPR-800 manufactured by Tokyo Ohka Kogyo Co., Ltd. is used as the resist 53, whereby the resist 53 is used for etching the underlayer 52 described later. It is designed to be removed by liquid.

Next, as shown in FIG. 32, the substrate 51 is held by a plating jig 43 so that a current flows through the base layer 52.
After being immersed in a Cu sulfuric acid plating solution (Copper glyme CLX) 41 manufactured by Nippon Leelonal stored in the plating tank 40, electric pattern plating was performed, and as shown in FIG.
A 1 μm thick u film 54 is formed. In this case, the plating condition is such that the plating process is performed for 1 minute at an output of 0.03 A / cm ² .
Here, the pattern accuracy of the Cu film 54 thus formed is faithfully formed in accordance with the pattern of the plating deposition resist 53, and a highly accurate wiring pattern is obtained.

That is, since the Cu layer 54 is formed by the electric pattern plating method as described above, a pattern accuracy error due to side etching unlike when a pattern is formed by wet etching does not occur, and a high-precision wiring pattern is formed. Can be obtained. Further, in the electric pattern plating method used for forming the Cu film 54, the plating apparatus is inexpensive and the processing speed is high, so that the manufacturing cost can be reduced.

Next, as shown in FIG. 34, after removing the plating adhesion resist 53 with a resist stripper, 300 g of potassium ferricyanide (K ₃ [Fe (CN) ₆ ]) was added.
A solution prepared by dissolving 5 g of NaOH in 1 l of H ₂ O,
4 is used as an etching resist to etch the underlayer 52.

Here, when the wiring width of the Cu film 54 due to this processing was measured, no change was observed in the steps shown in FIGS. 33 and 34, and the amount of side etching of the underlayer 52 was It was found that by forming the film thickness of 52 as thin as 1000 °, the pattern accuracy of about 0.1 μm was not affected.

Next, by curing the UV curable resin by a predetermined method, a flattening layer 56 is formed between the Cu films 54 as shown in FIG. 29, and thereafter, a transparent electrode is formed and a wiring is formed. Form a substrate.

After that, the wiring board, the alignment film and the like are formed, and the two wiring boards are opposed to each other.
A liquid crystal element is manufactured through a step of filling a liquid crystal between opposing substrates so as to sandwich the liquid crystal.

Since the resist 53 is alkali-soluble as described above, if the etching solution for the base layer 52 is used as a resist stripping solution, the plating-prevention resist 53 is removed and the base layer 52 is etched (see FIG. 33,
34) can be performed simultaneously in one step, so that the steps can be simplified and the manufacturing cost can be further reduced.

Further, the wiring pattern of the Cu film 54 is wet-etched as an etching resist to form the underlying layer 52 by patterning, so that Mo is patterned and then electric pattern plating of Cu is performed. There is no protruding defect due to abnormal growth of the pattern edge portion, and a highly accurate wiring pattern can be obtained.

Next, a description is given of a wiring board according to an eleventh embodiment of the present invention.

In the manufacturing method of the tenth embodiment described above, Cu is a metal which is easily oxidized in the metal wiring board 55 obtained by etching the underlayer 52 as shown in FIG. Therefore, it is necessary to prevent oxidation of the Cu film 54.

For this reason, the metal wiring board 55 is held on the plating jig 43 so that a current flows through each of the Cu film 54 and the underlayer 52, and the metal wiring board 55 is transferred to a Ni sulfate PC plating solution (Nical PC-3) 41 manufactured by Nippon Leelonal. After soaking (see FIG. 32),
A Ni film was plated with a current of 0.01 A / cm ^{2 to} a thickness of 1000 ° to form an antioxidant metal layer 56 as shown in FIG. Then, by plating with an antioxidant metal such as Ni, the oxidation of the Cu film 54 can be prevented.

Further, a metal wiring board in which Au (not shown) was formed on the surface of the antioxidant metal layer 56 by electroplating so as to have a thickness of 500 ° was also manufactured. The wiring substrate 1 whose wiring surface was protected with a Ni or Au plating film was placed in a high-temperature, high-humidity durable bath at 60 ° C. and 90% and subjected to a durability test for 1000 hours. As a result, no change in the wiring resistance was observed. .

As described above, by oxidizing a metal such as Cu, which is easily oxidized, by plating with an antioxidant metal such as Ni or Au, the oxidation of the Cu film 54 is prevented, and the wiring having a smaller variation in resistance value is formed. A substrate can be obtained.

Next, a description will be given of a wiring board according to a twelfth embodiment of the present invention.

According to the manufacturing method of the eleventh embodiment, as shown in FIG. 36, in the metal wiring board 55 'on which the oxidation preventing metal layer 56 is formed, as shown in FIG. The ultraviolet curable resin 57 is embedded in the gap between the substrates, and the substrate 55 'is press-molded with a mold having a flat surface,
The resin 57 was cured with UV light to obtain a flat wiring board.

By having such a flattening step, the problem of a step due to the wiring film thickness is solved, and Cu
The thickness of the film 54 can be increased to about 2 μm, and as a result, the wiring resistance can be greatly reduced.

[0169]

As described above, according to the present invention, by forming a metal wiring by a plating method between ultraviolet curing resin layers formed in advance on a substrate, a metal wiring in a releasing step is formed. Can be eliminated, and a plating method that is inexpensive and excellent in mass productivity can be used. Further, since no etching is required, disconnection of the metal wiring does not occur, and furthermore, since the metal wiring can be formed to a thickness of 250 nm or more, a low-resistance wiring substrate with no delay in voltage waveform can be obtained. .

Further, by using such a low-resistance wiring board, a line defect due to disconnection is eliminated in the liquid crystal element, and the display quality is kept good. On the other hand, the process is extremely simplified and an expensive manufacturing apparatus is required. Since it becomes unnecessary, a significant cost reduction becomes possible. Furthermore, by using the lift-off method, the wiring substrate can be manufactured without using an ultraviolet curable resin, so that damage to the color filter due to UV light can be prevented.

[Brief description of the drawings]

FIG. 1 is a view showing a structure of a liquid crystal element using a wiring board according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a state in which an underlayer is formed on a glass substrate in a method of manufacturing a wiring board according to a second embodiment of the present invention for manufacturing the wiring board.

FIG. 3 is a diagram illustrating a state in which an ultraviolet curable resin is dropped on a glass substrate on which an underlayer is formed in the method of manufacturing a wiring substrate.

FIG. 4 is a view showing a state in which a smooth plate is brought into contact with a glass substrate so as to sandwich an ultraviolet curable resin in the method for manufacturing a wiring substrate.

FIG. 5 is a diagram showing a state in which a glass substrate and a smooth plate are integrated in the method for manufacturing a wiring substrate.

FIG. 6 is a diagram showing a state in which an integrated object is irradiated with UV light in the method of manufacturing a wiring board.

FIG. 7 is a diagram showing a state in which a smooth plate is peeled off from an integrated body in the method of manufacturing a wiring board.

FIG. 8 is a view showing a state in which metal electrodes are formed between cured ultraviolet curable resins in the method of manufacturing a wiring board.

FIG. 9 is a diagram showing a state in which a wiring substrate is formed by forming a transparent electrode on a metal electrode in the method for manufacturing a wiring substrate.

FIG. 10 is a diagram showing a state in which an ultraviolet curable resin is dropped on a smooth plate in a method of manufacturing a wiring board according to a third embodiment of the present invention.

FIG. 11 is a diagram showing a state in which a glass substrate is brought into contact with a smooth plate so as to sandwich an ultraviolet curable resin in the method for manufacturing a wiring substrate.

FIG. 12 is a view showing a glass substrate on which an underlayer, a color filter, and an ultraviolet curable resin layer are sequentially formed in a method of manufacturing a wiring board according to a fourth embodiment of the present invention.

FIG. 13 is a diagram showing a state in which metal electrodes are formed between cured ultraviolet curable resins in the method of manufacturing a wiring board.

FIG. 14 is a view showing a state in which a transparent substrate is formed on a metal electrode to form a wiring substrate in the method for manufacturing a wiring substrate.

FIG. 15 is a view showing a glass substrate on which a color filter, a base layer, and an ultraviolet curable resin layer are sequentially formed in a method of manufacturing a wiring board according to a fifth embodiment of the present invention.

FIG. 16 is a view showing a state in which metal electrodes are formed between cured ultraviolet curable resins in the method of manufacturing a wiring board.

FIG. 17 is a diagram illustrating a state in which a transparent electrode is formed on a metal electrode to form a wiring board in the method for manufacturing a wiring board.

FIG. 18 is a diagram illustrating a glass substrate on which a color filter, a protective layer, a base layer, and an ultraviolet curable resin layer are sequentially formed in a method of manufacturing a wiring substrate according to a sixth embodiment of the present invention.

FIG. 19 is a diagram illustrating a state in which metal electrodes are formed between the cured ultraviolet-curable resins in the method of manufacturing a wiring board.

FIG. 20 is a view showing a state in which a wiring substrate is formed by forming a transparent electrode on a metal electrode in the method for manufacturing a wiring substrate.

FIG. 21 is an essential part cross-sectional view of a wiring board according to a seventh embodiment of the present invention;

FIG. 22 is a view showing a state in which a Mo underlayer and a resist are formed on a glass substrate in the method of manufacturing the wiring board according to the eighth embodiment of the present invention for manufacturing the wiring board.

FIG. 23 is a diagram illustrating a state where the Mo underlayer is etched and washed away in the method of manufacturing a wiring board.

FIG. 24 is a diagram illustrating a structure of a plasma CVD apparatus for forming a flattening film in the method for manufacturing a wiring substrate.

FIG. 25 is a diagram showing a state in which SiO ₂ is deposited only on the color filter to obtain the same plane as the top of the resist in the method of manufacturing a wiring board.

FIG. 26 is a diagram showing a state when the resist is removed from the substrate in the method for manufacturing a wiring substrate.

FIG. 27 is a diagram showing a state where the substrate is placed in a plating tank in the method for manufacturing a wiring substrate.

FIG. 28 is a diagram showing a state when a Cu film is formed only on a wiring pattern in the method for manufacturing a wiring substrate.

FIG. 29 is a diagram showing a state before a transparent electrode is formed on a wiring board according to a ninth embodiment of the present invention.

FIG. 30 is a diagram showing a state in which a Mo film is formed on a transparent substrate in a method of manufacturing a wiring board according to a tenth embodiment of the present invention for manufacturing the wiring board.

FIG. 31 is a cross-sectional view illustrating a method of manufacturing a wiring board according to the present invention;
The figure which shows the mode that the plating prevention resist was patterned on 2.

FIG. 32 is a diagram showing a state when a transparent substrate is placed in a plating tank in the method for manufacturing a wiring substrate.

FIG. 33 is a diagram showing a state in which a Cu film is formed on a transparent substrate in the method for manufacturing a wiring substrate.

FIG. 34 is a view showing a state in which the resist is removed in the method of manufacturing a wiring board.

FIG. 35 is a diagram showing a state in which the Mo film is etched in the method for manufacturing a wiring substrate.

FIG. 36 is a diagram showing a state before a metal electrode is formed on a wiring board according to an eleventh embodiment of the present invention.

FIG. 37 is a view showing a state before a transparent electrode is formed on a wiring board according to a twelfth embodiment of the present invention.

FIG. 38 illustrates a structure of a conventional liquid crystal element.

FIG. 39 is a view showing a transparent electrode formed on a glass substrate of the liquid crystal element.

FIG. 40 is a table showing a relationship between a thickness of a metal electrode, a waveform delay amount, and a driving frequency.

FIG. 41 is a diagram illustrating a first method of manufacturing a conventional wiring board.

FIG. 42 is a diagram illustrating a second method of manufacturing a conventional wiring board.

FIG. 43 is a diagram illustrating a third method of manufacturing the conventional wiring board.

FIG. 44 is a view showing side etching of a Cu wiring in a conventional method of manufacturing a wiring substrate.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 1 Liquid crystal element 2, 2 ', 2 ", 2A, 77 Wiring board 3, 66 Liquid crystal 6, 23, 51 Glass substrate 6a, 24, 52, 79 Underlayer 7, 27 Transparent electrode 10, 25, 72 Metal electrode 11 Ultraviolet Cured resin film 11a UV curable resin 12,75 Smooth plate 14,14 ', 14 ", 14A, 29,55,55',
73, 73 ′ Metal wiring board 16, 22, 78 Color filter 26 Protective layer 27, 56 Flattening layer 54 Cu layer

 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Makoto Kameyama 3-30-2 Shimomaruko, Ota-ku, Tokyo Inside Canon Inc. (72) Inventor Atsuri Ishikura 3-30-2 Shimomaruko 3-chome, Ota-ku, Tokyo Non Corporation

Claims (30)

[Claims] An auxiliary layer formed on a surface of the light-transmitting substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surface of the auxiliary electrode and the insulating layer. In the wiring board, the auxiliary electrode is formed by arranging a wiring material in a plurality of recesses formed in the insulating layer. 2. The wiring material is Cu, Cr, Mo, Ni,
2. The wiring board according to claim 1, wherein the auxiliary electrode is formed of one of Au, Ag, and Pt or an alloy thereof, and is disposed in the recess by plating. 3. The method according to claim 1, wherein Pd,
3. The method according to claim 1, wherein an underlayer made of Ag, Au, Pt, or Mo and forming a bottom surface of the recess is provided, and the auxiliary electrode is formed on a surface of the underlayer. Wiring board. 4. The wiring board according to claim 1, wherein a color filter layer is provided between the light-transmissive base material and the insulating layer and at a portion outside the concave portion. 5. The color filter layer is protected between the light-transmitting substrate and the insulating layer, and a protective layer on which the underlayer is formed is provided on a surface of the color filter layer. The wiring board as described. 6. The wiring board according to claim 1, wherein the insulating layer is formed of a polymer material. 7. The wiring board according to claim 6, wherein the polymer material is a resin that is cured by irradiating ultraviolet rays. 8. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In the method for manufacturing a wiring board, a step of forming an underlayer made of any of Pd, Ag, Au, Pt, and Mo on the translucent substrate; and a pattern shape of the translucent substrate and the auxiliary electrode. A step of sandwiching a polymer material between a smooth plate and a smooth plate having a convex portion corresponding to, and pressing the light-transmissive base material and the smooth plate together, and pressing the polymer material between the substrate and the smooth plate. And curing the polymer material by irradiating polymer material curing light on the translucent substrate to form an insulating layer having a plurality of recesses corresponding to the pattern shape of the auxiliary electrode. A step of releasing the smooth plate from the mold; Cu, Cr, M
o, a step of forming the auxiliary electrode by arranging a wiring member made of any of Ni, Au, Ag, and Pt or an alloy thereof; and forming a main electrode on the surface of the auxiliary electrode and the insulating layer; A method for manufacturing a wiring board, comprising: 9. Between the light-transmissive substrate and the insulating layer,
9. The method for manufacturing a wiring board according to claim 8, further comprising a step of forming a color filter in a portion deviating from the concave portion. 10. The method according to claim 9, further comprising the step of protecting the color filter on the surface of the color filter and forming a protective layer on which the underlayer is formed. . 11. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In a liquid crystal element in which liquid crystal is sandwiched between a pair of wiring substrates, the wiring substrate is formed by forming an insulating layer having a plurality of concave portions on the translucent base material, and plating the concave portions with a plating method.
A liquid crystal element, wherein the auxiliary electrode is formed by disposing a wiring member made of any one of u, Cr, Mo, Ni, Au, Ag, and Pt or an alloy thereof. 12. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In a method for manufacturing a liquid crystal element in which a liquid crystal is sandwiched between a pair of wiring boards, a step of forming an underlayer made of any of Pd, Ag, Au, Pt, and Mo on the translucent substrate; A step of sandwiching a polymer material between a base material and a smooth plate having a convex portion corresponding to the pattern shape of the auxiliary electrode, and pressing the light-transmissive base material and the smooth plate together, the substrate and the smooth plate Filling the polymer material between, and irradiating the polymer material curing light to form an insulating layer having a plurality of recesses corresponding to the pattern shape of the auxiliary electrode on the light-transmitting base material Curing the polymer material, and releasing the smooth plate That a step, Cu in each recess of the insulating layer by plating, Cr, M
o, a step of forming the auxiliary electrode by arranging a wiring member made of any of Ni, Au, Ag, and Pt or an alloy thereof; and forming a main electrode on the surface of the auxiliary electrode and the insulating layer; Facing the wiring substrate on which the main electrode is formed, and filling a liquid crystal between the opposed substrates so as to sandwich the liquid crystal. 13. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In the wiring board, the insulating layer is formed to have a plurality of recesses by using a lift-off method, and the auxiliary electrode is formed by arranging a wiring material in the plurality of recesses. 14. The wiring board according to claim 13, wherein the insulating layer has SiO ₂ as a main component, and organic silane is used as a raw material of the insulating layer. 15. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In the method for manufacturing a wiring board, a step of forming an insulating layer having a plurality of recesses using a lift-off method; and forming Cu, Cr, M in the plurality of recesses using an electrolytic plating method.
a step of arranging a wiring member made of any of o, Ni, Au, Ag, and Pt or an alloy thereof to form the auxiliary electrode; and forming the main electrode on the surface of the auxiliary electrode and an insulating layer. A method for manufacturing a wiring board, comprising: 16. The method according to claim 15, wherein the insulating layer has SiO ₂ as a main component, and organic silane is used as a raw material of the insulating layer. 17. The method according to claim 15, wherein the wiring member is arranged until the auxiliary electrode is flush with the surface of the insulating layer. 18. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In a liquid crystal element sandwiching liquid crystal between a pair of wiring boards, the wiring board is formed by forming the insulating layer to have a plurality of recesses using a lift-off method, and then arranging a wiring material in the plurality of recesses. A liquid crystal element comprising an auxiliary electrode. 19. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In a method for manufacturing a liquid crystal element in which a liquid crystal is sandwiched between a pair of wiring substrates, a step of forming an insulating layer having a plurality of recesses by using a lift-off method;
a step of arranging a wiring member made of any of o, Ni, Au, Ag, and Pt or an alloy thereof to form the auxiliary electrode; and forming the main electrode on the surface of the auxiliary electrode and an insulating layer. A step of facing the wiring substrate on which the main electrode is formed, and filling a liquid crystal between the facing substrates so as to sandwich the liquid crystal. 20. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. A wiring board, comprising: a base layer formed by a sputtering method on the surface of the light-transmitting base material; and an auxiliary electrode formed by a wiring material disposed on the base layer by an electric pattern plating method. A wiring substrate, wherein the underlayer is patterned by wet etching using the wiring material as an etching resist. 21. The underlayer having a thickness of 1,000 to 50.
21. The wiring board according to claim 20, wherein the angle is 00 °. 22. The wiring substrate according to claim 20, wherein said underlayer is mainly made of Mo. 23. The wiring board according to claim 20, wherein the wiring material is mainly made of Cu. 24. The wiring board according to claim 20, wherein a surface of said auxiliary electrode is covered with an antioxidant metal film by an electroplating method. 25. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In the method for manufacturing a wiring board, a step of forming a base layer mainly composed of Mo on a light-transmitting base material by a sputtering method; Forming an auxiliary electrode by patterning a wiring material to be formed by an electroplating method, and removing the plating-prevention resist, and then using the selective etching solution of Mo and Cu to make the wiring material an etching resist for the base layer. And a step of performing an etching process. 26. The wiring substrate according to claim 25, wherein the selective etching solution for the base layer and the wiring material is a solution containing potassium ferricyanide, and the plating prevention resist is an alkali-soluble positive resist. Manufacturing method. 27. The method according to claim 25, further comprising a step of covering the surface of the auxiliary electrode with an antioxidant metal film by an electroplating method. 28. The method of manufacturing a wiring board according to claim 25, further comprising a step of forming the insulating layer from a polymer material and flattening the surface of the wiring board with the insulating layer. Method. 29. A semiconductor device comprising: a plurality of auxiliary electrodes formed on a surface of a translucent substrate; an insulating layer insulating between the auxiliary electrodes; and a main electrode formed on the surfaces of the auxiliary electrode and the insulating layer. In a liquid crystal element in which liquid crystal is sandwiched between a pair of wiring substrates, the wiring substrate is disposed on the surface of the translucent substrate by a sputtering method and an electric pattern plating method on the underlayer. A liquid crystal device, comprising: an auxiliary electrode formed of a wiring material; and the underlayer is patterned by wet etching using the wiring material as an etching resist. 30. A light-transmitting base material, a plurality of auxiliary electrodes formed on the light-transmitting base material, an insulating layer provided between the auxiliary electrodes, and the insulating layer provided along the auxiliary electrodes. In a method for manufacturing a liquid crystal element in which liquid crystal is sandwiched between a pair of wiring substrates having a main electrode formed on a layer surface, a step of forming an underlayer mainly composed of Mo on a translucent substrate by a sputtering method, After forming a plating-prevention resist pattern on the underlayer, a step of patterning a wiring material mainly composed of Cu by an electroplating method to form an auxiliary electrode, and after removing the plating-prevention resist, Etching the underlayer with a selective etching solution of Mo and Cu using the wiring material as an etching resist; and opposing the wiring substrate on which the main electrode is formed, Method of manufacturing a liquid crystal device characterized by comprising and a step of filling a liquid crystal between the opposed substrates to sandwich the.