JPH10190190A - Board and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a board which can realize the high-density mounting of semiconductors, such as the both-side mounting, multilayered mounting, multi- surface mounting, etc., by cutting a block body into two or more pieces so that linear conductors and/or heat conductors may conduct the front sides to the rear sides of the pieces. SOLUTION: A block composed of such an insulating material as glass, etc., in which linear conductors are buried is cut into pieces so that the cut faces of the conductors may appear on the cut face of the insulating material. In such a way, a substrate can be manufactured. Since the board is obtained by cutting the insulating material containing buried linear conductors, complicated processes for driving the insulating material and making plating, etc., for providing the conductors becomes unnecessary. In addition, the cutting of the insulating material containing the buried conductors can be performed easily by utilizing the cutting method of glass, etc., as it is. The insulating material can be cut in a direction which is substantially perpendicular to the conductors and, when required, in another direction which is not perpendicular to the conductors.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate useful for a wiring board or the like mounted on a semiconductor and a method for manufacturing the same.

[0002]

2. Description of the Related Art ICs
Various types of wiring boards on which semiconductor chips such as LSIs and LSIs are mounted have been proposed and put into practical use. For example, a substrate is generally used in which a through-hole is formed in a resin substrate such as polyimide or glass epoxy, and the wall surface of the through-hole is metallized by a plating method so that the upper and lower surfaces of the substrate have conductivity. Further, there is a ceramic substrate in which a through hole is formed in a ceramic green sheet, the through hole is filled with a metal paste, and then sintered (Japanese Patent Publication No. Hei 3-37758).

[0005] However, semiconductor devices are required to have higher performance and higher density, and therefore, substrates are required to have extremely high flatness and smoothness. However,
In the case of a conventional resin substrate, there is a limit in the smoothness, so that the mounting density is limited. Further, the method of metallizing the through holes has a disadvantage that the process is long and the cost is high.
Further, since the conductor is mainly formed by a plating method, there is a disadvantage that the type of the conductor is largely restricted. In addition, the ceramic green sheet shrinks unevenly in the process of removing and sintering the resin serving as a binder, causing distortion and cracks, and it is difficult to ensure smoothness (the surface of the alumina sintered substrate). The maximum waviness of the filter appearing on the cross section due to the unevenness is around 20 μm).

[0004] Attempts have also been made to use glass instead of resin and ceramics. Since very high smoothness is obtained by polishing glass, it is suitable as a high-density mounting substrate. However, in the case of glass, it is difficult to make the upper and lower surfaces of the substrate conductive, and in practice, only one surface of the substrate is often used by plating on the surface. If only one side is used, the mounting density is limited, and the merit of using glass cannot be fully utilized.

[0005] Further, an attempt has been made to form a through hole in a polished glass substrate and to metallize the wall surface of the through hole by plating in the same manner as the above resin method (Japanese Unexamined Patent Publication (Kokai) No. Heisei 3-
No. 203341). However, even if a through-hole is formed, similar to the above-mentioned resin method, the method of metallizing the through-hole requires a long process and is expensive, and also requires a conductor to be formed by plating. There is a disadvantage that the type is greatly restricted. Further, 100 μm
When the following three-dimensional wiring is formed at a fine pitch, it is extremely difficult to form a through hole while preventing breakage of glass. Thus, by a method according to the conventional method, a conductor oriented in the thickness direction is formed in a glass substrate,
It has been difficult to electrically connect the front and back surfaces, the side and side surfaces, and the side and back surfaces.

In recent years, as the integration density of IC chips has increased and the processing speed has increased, it has become an important issue how to release heat from the chips. In particular, in the case of a substrate made of resin, the heat dissipation is poor, and it is not suitable for high-density mounting with heat dissipation. For example, the thermal conductivity of the resin is about 0.0005 cal / cm · sec · ° C. On the other hand, the thermal conductivity of glass is about 10 times that of resin, and if a conductor can be formed on a glass substrate at a fine pitch, the problem of heat radiation can be solved to some extent. However, it is more preferable that there is a means capable of improving the heat dissipation of the substrate regardless of the type of the substrate.

Accordingly, a first object of the present invention is to realize a high-density mounting such as double-sided mounting, multi-layer mounting, or multi-sided mounting of semiconductors, and to orient a conductor in a thickness direction in which a conductor can be present even at a fine pitch. To provide a glass substrate containing a conductive material and a method for manufacturing the same. A second object of the present invention is to provide a substrate for mounting an electronic component such as a semiconductor, the substrate having improved heat dissipation. A third object of the present invention is to provide a method for easily manufacturing a resin substrate without using a plating method.

[0008]

The main contents of the present invention for achieving the above object are as follows. A step of forming a block by embedding one or more linear conductors and / or heat conductors in an insulating material, and forming the block body into a linear conductor and / or a heat conductor. A method for manufacturing a front and back conductive substrate, comprising a step of cutting into two or more pieces so as to be conductive (claim 1). A substrate having one or two or more conductors and / or heat conductors penetrating the insulating material, wherein at least the main surface of the insulating material has a maximum waviness of 10 μm or less. Front and back through substrate [Claim 8]. A substrate in which one or more conductors and / or thermal conductors penetrate the insulating material from the front and back, wherein the amount of warpage of at least the main surface of the insulating material is 10 μm / cm or less. Front and back through substrate [Claim 9]. A mounting substrate according to the present invention, wherein at least one electrode and / or wiring connected to at least one conductor of the substrate is formed [Claim 11], and at least an electronic component is mounted. An electronic component mounting board characterized by the following [Claim 12].

[0009]

BEST MODE FOR CARRYING OUT THE INVENTION The substrate of the present invention has one or more conductors and / or heat conductors penetrating through an insulating material. Further, at least the maximum waviness of the filtering on the main surface of the insulating material is 10 μm or less, or at least the warpage of the main surface of the insulating material is 10 μm / cm or less. More preferably, the substrate of the present invention has at least a maximum waviness of the filter on the main surface of the insulating material of 10 μm or less and a warpage of 10 μm / cm or less.

The insulating material is an insulating material, and is preferably a material that can ensure smoothness and flatness as a substrate material. The smoothness may be obtained primarily by molding or may be obtained secondarily by cutting, polishing, or the like. The smoothness of the substrate can be evaluated, for example, based on the magnitude of the “maximum filtering undulation”, which is the maximum value of the filtering undulation that appears on the cross section of the substrate due to the surface unevenness. "Maximum swell of filter wave" is JIS-B
0610. In the substrate of the present invention,
It is preferable to have a smoothness in which the maximum swell of the filter appears on the cross section of the substrate is 10 μm or less. Further, from the viewpoint that a substrate having such smoothness can be provided, examples of the insulating material include glass and organic polymers. Note that ceramics, which cannot provide smoothness and are also extremely difficult to perform secondary processing such as polishing, are not preferable as insulating materials.

The flatness can be defined as the amount of warpage of the main surface of the insulating material constituting the substrate. The amount of surface warpage in the present invention is obtained from a virtual plane of the sample.
More specifically, the amount of warpage is determined by the position coordinates (x
i, yi, zi) are measured at a plurality of points using a laser displacement meter, a virtual plane that the sample surface should originally have is obtained from their position coordinates, and a distance between this virtual plane and the actual sample surface is obtained. It is required based on this. The equation of the virtual plane is obtained by the least square method, and the difference between the maximum value and the minimum value of the displacement between the virtual plane and the actual sample surface is defined as the amount of warpage. In the substrate of the present invention, the warpage is 10 μm / cm or less. The amount of warpage is preferably 3 μm / cm or less. The insulating material is preferably glass, for example, from the viewpoint that a substrate having such flatness can be provided.

The above-mentioned glass can be appropriately selected from known glasses in consideration of conditions in the production method, physical properties required for the substrate, and the like. From the viewpoint of the production method, glass having a low melting point or softening point is preferable.In terms of the physical properties of the substrate, the electric resistance is large, the dielectric constant is low, the dielectric loss is small, the chemical durability and the devitrification resistance are excellent, and the conductive property is high. It is preferable that the glass be compatible with the body. However, if the heat resistance of the conductor is high,
The melting point of the glass is not necessarily limited to the low melting point glass, and the melting point of the glass can be appropriately determined in consideration of the heat resistance of the conductor. The glass used for the substrate of the present invention includes, for example, a silicate glass, a borate glass, and a network-forming component having a glass structure of at least one of SiO ₂ , B ₂ O ₃ , and P ₂ O ₅ . It can be chosen from phosphate glasses and borosilicate glasses. However, it is not limited to these. The organic polymer can be, for example, a thermosetting resin or a photocurable resin such as ultraviolet rays. These polymers can also be appropriately selected from known materials in consideration of the production conditions and the physical properties required for the substrate.

The conductor used for the substrate of the present invention is not particularly limited as long as it has a desired conductivity, and may be, for example, a metal, an alloy or a carbon-based material.
However, when the insulating material is glass and heat resistance, chemical durability, and the like are required for the manufacturing method, it is appropriate to appropriately consider these characteristics when selecting a conductor. Materials having relatively low electric resistance, high melting point, and not corroded by the glass melt include, for example, gold (melting point 1064 ° C., electric resistance 2.35 × 10 ⁻⁶ Ω · cm), platinum (melting point 177).
4 ° C., electric resistance 10.6 × 10 ⁻⁶ Ω · cm), tungsten (melting point 3410 ° C., electric resistance 5.5 × 10 ⁻⁶ Ω · c)
m), and alloys such as stainless steel (melting point 1400 ° C.) and Kovar (melting point 1450 ° C.). In addition, examples of the carbon-based material include graphite, carbon fiber, and the like.

When the insulating material is a polymer, since the production is performed at room temperature or at a relatively low temperature even when heated, a conductor having low heat resistance can be used.
3 ° C., electric resistance 1.67 × 10 ⁻⁶ Ω · cm), graphite (melting point 3700 ° C., electric resistance 1.35 × 10 ⁻⁶ Ω · cm)
cm) and the like. In the substrate of the present invention, two or more conductors may be made of the same material, or may be made of two or more different materials as desired.
In a method that also uses a conventional plating method, providing a conductor made of two or more types of materials is complicated in terms of the manufacturing method and was virtually impossible, but can be easily performed by the manufacturing method of the present invention described below.

The cross-sectional shape of the conductor can be, for example, circular, elliptical, square, rectangular, polygonal or star-shaped. There is no particular limitation on the cross-sectional dimensions of the conductor,
It can be determined appropriately depending on the use of the substrate. However, the viewpoint that the density (number of conductors) per unit cross-sectional area of the conductor that can be buried in the substrate can be increased, and that if the cross-sectional dimension becomes too large, cracks easily occur between the conductor and the insulating material. The conductor preferably has a cross-sectional diameter of 3 mm or less. Further, in the substrate of the present invention, it is possible to make the cross-sectional dimension of the conductor smaller than that of the conventional substrate, for example, because of the manufacturing method (not using the plating method). The diameter of the circle may be 100 μm or less, or even 50 μm or less. Further, in the substrate of the present invention, the pitch between adjacent conductors can be appropriately determined depending on the use of the substrate. Especially,
In the substrate of the present invention, it is possible to make the pitch smaller than in the conventional substrate, for example, for the reason of the manufacturing method (there is no need to perforate the substrate material). it can.

Further, the substrate of the present invention further comprises, in addition to the conductor,
One or two or more heat conductors may be penetrated in the thickness direction of the flat plate. Alternatively, the substrate of the present invention may be formed by penetrating only the heat conductor independently of the conductor. This heat conductor, like the conductor, is sealed in the insulation material with substantially no gap between the heat conductor and the insulation material. The fact that there is substantially no gap between the insulating material makes the heat dissipation of the insulating material easier. It is also appropriate that both end surfaces of each heat conductor are substantially in the same plane as both surfaces of the flat plate, similarly to the case of the conductor. The heat conductor is preferably selected from materials having high heat conductivity, but heat resistance is further considered depending on the type of insulating material. The heat conductor can be appropriately selected from the materials for the conductor. The cross-sectional dimensions and shape of the heat conductor can be the same as those of the conductor, and for the same reason as the conductor, the cross-sectional diameter is preferably 3 mm or less. The shape of the heat conductor can be, for example, circular, oval, square, rectangular, polygonal or star-shaped. From the viewpoint of heat absorption from the insulating material, it is generally preferable to have a shape having a large surface area, but for manufacturing reasons, a cross section having a small surface area may be circular. In addition, the shape and number of the heat conductor can be appropriately determined so that desired heat radiation can be achieved.

The substrate of the present invention is suitable, for example, as a substrate for mounting electronic components. As electronic components, for example, I
Examples include C and LSI, but are not limited thereto. There is no limitation on the type of IC or LSI, and for example, a CCD, a photoelectric IC, a bare chip, or the like can be used. Further, as the electronic component mounting substrate of the present invention, for example, a substrate used when packaging one of an IC or an LSI, a substrate on which a plurality of ICs and / or LSIs are mounted, an IC and / or an LS
In addition to I, a substrate of a hybrid IC on which a capacitor, a resistor, a coil, and the like are mounted can be given.

When used in such an application, since smoothness is required as well as flatness, it is preferable to select a material capable of ensuring smoothness as an insulating material in the substrate of the present invention. In the present invention, as described above, the cross-section of the substrate preferably has a maximum swelling of 10 μm or less, and the maximum swelling due to the surface unevenness has a smoothness of 5 μm or less. More preferred. In addition, the "maximum swelling of the filtering" means that an evaluation length of 1 m is extracted from the swelling curve in the direction of the average line, and two straight lines parallel to the average line sandwich the filtering swelling curve. Is a value measured in the direction of the vertical magnification. Further, the “filtered undulation curve” refers to a curve obtained by removing a surface roughness component having a short wavelength from a cross-sectional curve by a low-pass filter.

The substrate of the present invention may be a substrate having, on the surface of the substrate, electrodes and / or wirings connected to conductors in the substrate. The electrodes and wiring are made of conventional materials, structures,
It can be appropriately selected from the production method. Further, since the substrate of the present invention has good heat dissipation, it is also suitable for mounting a power IC or the like that generates a large amount of heat. Further, the electronic component mounting board of the present invention is a board in which an IC, an LSI, a capacitor, a resistor, a coil, and the like are appropriately mounted on a board on which electrodes and / or wirings are formed. FIG. 4 shows an example of the mounting board of the present invention. In the figure, (A) shows the substrate 1 of the present invention.
Shows a state in which wiring 3 connected to the conductor 2 of FIG.
(B) shows a state where the semiconductor chip 4 as an electronic component is mounted on the substrate 1 shown in (A).

A method of manufacturing a substrate The front and back conductive substrate of the present invention includes a step of forming a block by embedding one or more linear conductors and / or thermal conductors in an insulating material; The body so that the linear conductor and / or the thermal conductor
It can be manufactured by a method including a step of cutting into one or more pieces. In this method, the block body embeds one or more linear conductors and / or heat conductors in a softened or fluidized insulating material, and then solidifies the softened or fluidized insulating material. Can be prepared.

More specifically, the block body is formed by burying the conductor and / or the heat conductor in a molding frame on which one or more linear conductors and / or heat conductors are stretched. Or a solid or semi-solid insulating material is fluidized in the forming frame to bury the conductors and / or thermal conductors, and then solidifies the fluidized insulating material. Can be prepared. Alternatively, the block body is formed by pressing a solid or semi-solid insulating material so as to include one or more linear conductors and / or heat conductors. It can also be prepared by burying the body and then solidifying the softened insulating material. In the method of softening and pressing this insulating material,
Sandwiching a conductor and / or a heat conductor between at least two plate-like insulating materials, and then softening and pressing the insulating material to bury the conductor and / or the heat conductor in the insulating material; it can. In the method of the present invention, the insulating material needs to be a material that can be subjected to secondary processing such as cutting. From this viewpoint, it is preferable to use glass or a polymer as the insulating material in this case. still,
Ceramics are not suitable. Hereinafter, a case where glass is used as an insulating material and the glass is fluidized will be described with reference to FIG.

The greatest feature of the production method of the present invention is that
In step (4). That is, this is a process in which a substrate can be manufactured by cutting an insulating material (glass) block in which a linear conductor is embedded so that the cut surface of the conductor appears on the cut surface of the insulating material. By cutting the insulating material embedded with the linear conductor to obtain the substrate, it was necessary in the conventional method,
A complicated process such as perforation of an insulating material and plating for providing a conductor is not required. Further, the cutting of the insulating material in which the conductor is buried can be easily performed by directly using a conventional cutting method of glass or the like. still,
The cutting of the insulating material can be performed, for example, so as to be substantially perpendicular to the buried conductor, or at an angle that is not perpendicular to the conductor, if desired.

There is no particular limitation on the method of preparing the insulating material in which the conductor is embedded. In the case of the method of fluidizing the insulating material, for example, a molding frame in which one or more linear conductors are stretched Prepared, or poured the fluidized insulating material into the molding frame so that the conductor is buried, or fluidized solid or semi-solid insulating material in the molding frame to bury the conductor, This can be performed by solidifying the fluidized insulating material. For example, as shown in FIG.
The glass is melted and fluidized [step (1)], the molten glass is poured into a molding frame covered with a linear conductor [step (2)], and the fluidized glass is gradually cooled and solidified [step (1)]. (3)] Thus, an insulating material in which the conductor is embedded can be prepared.

In the case where the insulating material is glass, in addition to pouring the glass melted by heating into the molding frame, solid glass such as lump, plate, rod, granule, powder, etc. is formed around the conductor in the molding frame. By filling, and then heating and melting the glass, and solidifying it by cooling, an insulating material having a conductor embedded therein can be prepared. The conductors in substantially sealed in the glass no gap between the glass, when pouring the molten glass is a glass of the following viscosity of 10 ⁵ poises, when heating and melting the filled glass Has a glass viscosity of 10 ⁷
It is appropriate to heat so as to be less than poise. Next, the glass in which the conductor is sealed is transferred to an annealing furnace heated near the annealing point of the glass, and gradually cooled to room temperature, whereby a glass block in which the conductor is embedded is obtained.

When the insulating material is a polymer, for example, a monomer composition is poured into a molding frame, and then, in the case of a thermosetting resin, heating is performed. By irradiating and polymerizing and curing the monomer composition, a polymer block in which a conductor is embedded can be prepared.

In the insulating material in which the conductor is buried, if there are two or more linear conductors, and if there are two or more, it is preferable that the conductor is buried substantially parallel to each other. When preparing an insulating material in which a conductor is embedded, by always applying tension to the conductor, the conductor does not loosen due to heating, and the conductor can be arranged at an accurate position. Further, by burying them in parallel, the danger of a short circuit can be avoided. In addition, a substrate having a heat conductor can be manufactured by embedding one or more linear heat conductors together with the conductor in the insulating material. In this case, it is preferable that the linear conductor and the heat conductor are buried without slack and substantially parallel to each other. Note that the linear conductor and the heat conductor can be, for example, in a wire shape, a band shape, or the like.

The linear conductor and the thermal conductor may be subjected to a surface treatment for increasing the affinity of the surface with the insulating material. For this surface treatment, for example, U
A process of removing surface abnormalities, such as a process of removing dirt by V irradiation, is also included. Such a surface treatment is effective in increasing the affinity with the insulating material whether the insulating material is glass or polymer. Further, when the insulating material is glass, the affinity with glass can be increased by coating the surfaces of the conductor and the heat conductor with glass or ceramics such as zirconia. In addition, by preheating or calcining the conductor and the heat conductor, the affinity with the insulating material can be increased.

The cut surface of the insulating material cut in the step (4) into a plate shape can be further polished if necessary. This polishing can be performed in the same manner as the usual polishing of glass or polymer. By polishing, smoothness can be further improved and excellent smoothness can be imparted. The smoothness of the substrate is
As described above, it can be represented by the maximum swell of the filtered wave. Due to the cutting in step (4), the maximum swell of the filtered
A substrate having a smoothness of not more than m can be obtained. Further, by polishing this, the maximum waviness of the filtering can be further reduced, and for example, a substrate of 5 μm or less can be obtained. In addition, the above-mentioned cutting and / or polishing allows not only the smoothness of the surface of the insulating material but also the both end surfaces of each conductor to be substantially in the same plane as the plane of the flat plate (that is, the insulating material) on which each end surface appears. There can be. Further, in the case of a substrate in which the heat conductor is also sealed, the cutting and / or polishing is performed so that both end faces of the heat conductor are substantially in the same plane as the plane of the flat plate on which each end face appears. You can also The thickness of the glass substrate obtained by slicing or cutting and polishing the glass or polymer block can be freely changed according to the purpose. Even if metal or other conductors and thermal conductors are sealed in glass or polymer, they do not affect the workability of glass or polymer, and can be cut or polished in the same manner as ordinary glass or polymer. it can.

Next, a method for softening and pressing the insulating material is shown in FIG.
It will be described based on. In this method, the conductor and / or the heat conductor are buried by applying pressure so as to include one or more linear conductors and / or heat conductors. To pressurize to include the electrical conductor and / or the thermal conductor, for example, the electrical conductor and / or the thermal conductor is sandwiched between at least two plate-like insulating materials, and then the insulating material is softened and heated. You only have to press. In the step (10), the conductor and / or the heat conductor are sandwiched between at least two plate-like insulating materials. Although a conductor and / or a heat conductor stretched over a molding frame similar to that of FIG. 1 may be used, the insulating material does not flow but is merely softened, so there is no problem even if the molding frame is not used. . A plurality of conductors and / or
Alternatively, the heat conductor may be maintained at a predetermined interval. still,
As the molding frame on which the electric conductor and / or the heat conductor is stretched, the same one as described with reference to FIG. 1 can be used. Next, the insulating material is softened, and a conductor and / or a heat conductor are buried in the insulating material by applying pressure from above and below. If the insulating material is glass, it can be softened by heating the glass, and the degree of softening is such that the softened glass can be deformed by pressure to bury the conductor and / or heat conductor. It can be selected as appropriate. In the step (11), the insulating material in which the conductor and / or the heat conductor is buried under pressure is gradually cooled to obtain a block body. Conditions for slow cooling (such as slow cooling start temperature and slow cooling rate) can be appropriately determined in consideration of properties of glass used as an insulating material. In step (12), the block body obtained by slow cooling is cut, and in step (13), at least the cut surface of the sliced block body is polished. The method of cutting and polishing the block body is the same as the case described with reference to FIG.

Electrodes and wirings can be easily formed on the surface of the substrate of the present invention by a method used in ordinary surface mounting, for example, a plating method. In addition, semiconductors can be mounted on the substrate on which electrodes and wiring are formed, double-sided mounting in which semiconductors are mounted on both sides with electrical conductivity, multilayer mounting in which thin glass substrates with wiring are stacked, and multilayer mounting. Multi-surface mounting that mounts semiconductors on a typical glass block is possible.

In the prior art, in order to check the continuity on both sides of the substrate, it is necessary to check the continuity one by one.
Quality control was very difficult. However, according to the substrate of the present invention, conduction or short-circuit can be checked in the state of the block before cutting, so that quality control becomes easy, and a low-cost and reliable substrate can be provided. Furthermore, in the substrate of the present invention, since a heat conductor having good heat conductivity can be sealed in addition to the conductor, heat generated in the chip can be easily released to the back surface. That is, a substrate having excellent heat dissipation properties can be provided.

Among the substrates of the present invention, the glass substrate is sealed in the glass by focusing on the smoothness of the glass, the moldability during heating, the workability such as polishing, and the wettability with various metals. By placing the conductor on the glass,
According to the glass substrate of the present invention, high-density mounting can be realized with extremely high smoothness, metals having various electric resistances can be used as conductors, and optical window glasses such as photoelectric elements for using transparent glass and Advantages are obtained such that a semiconductor can be mounted on the ultraviolet transmitting glass. In addition, large area and large block can be easily made,
Since slicing and cutting are also possible, mass production cost reduction is easy. Since the conductor is formed at the material stage, shorts and disconnections can be easily found. Further, there is an advantage that a three-dimensional wiring with a minute pitch of 100 μm or less can be formed.

[0033]

The present invention will be further described with reference to the following examples. Examples 1 to 6 Batch materials obtained by weighing and mixing raw materials such as oxides, hydroxides, carbonates, nitrates, and sulfides so as to have the composition shown in Table 1 were placed in a heat-resistant container such as a platinum crucible, and subjected to 800 to 1400
After heating, melting, stirring, homogenizing, and refining to ° C., the temperature of the glass was adjusted so that the viscosity became 10 ⁵ poise or less. The molten glass was poured into a mold in which metal wires shown in Table 2 were arranged using a jig. Next, the obtained glass block was transferred to an electric furnace that had been heated near the annealing point, and was gradually cooled to room temperature. The obtained glass block was sliced in a direction perpendicular to the wire. The maximum waviness of the filtering of each substrate obtained by slicing was 10 μm or less. After slicing, both sides were polished to obtain a substrate of the present invention. The maximum filter waviness of each substrate after polishing is 5μ.
m or less. Furthermore, on both sides of the polished glass substrate,
Cu wiring was formed by plating and photolithographic etching. Chips were mounted on both sides of this substrate. Table 1 shows the glass composition and various measurement data.

[0034]

[Table 1]

[0035]

[Table 2]

Examples 7 to 10 Plate-shaped glass having a composition shown in Table 3 (thickness: 10 mm)
Two sheets were laminated, and a conductor or a heat conductor wire having a material and a diameter shown in Table 3 was arranged between them. The glass was heated to a temperature above the yield point of the glass while pressing. The pressure was set to a pressure (10 to 100 kgf / m ² ) at which the softened glass could easily go around the wire. When the shape of the softened glass is easily deformed, the softening and pressurizing can be performed using a molding die. After the pressurization, the glass was gradually cooled, and a glass block containing a conductor or a heat conductor wire was sliced in a direction perpendicular to the direction of the wire. The maximum waviness of the filtering of the substrate (10 (width) × 60 (length) × thickness 1.5 mm) obtained by slicing was 10 μm or less for each substrate. The amount of warpage of the substrate was measured. That is, as shown in FIG. 3, two warpages at the warpage measurement position were measured per sample, a virtual plane was calculated from the data, and the maximum displacement from this virtual plane was defined as the amount of warpage. The amount of warpage is
The value was 4 μm / cm or less for all substrates. still,
The warpage of the alumina substrate measured under the same conditions was 17 μm.
/ Cm.

Next, both surfaces of the sliced substrate were polished. The maximum waviness of the filtered substrate after polishing was 5 μm or less for each substrate. Further, wiring was formed on both surfaces of the polished glass substrate by plating and screening printing of a conductive paste, and chips were mounted on both surfaces of the substrate. Table 3 shows the glass composition and various measurement data.
The conduction and the heat conduction were confirmed as follows. Check the continuity The obtained glass block is 1 mm thick perpendicular to the wire.
And polished on both sides. A tester was applied to both sides of the glass wire to check for conduction. Those with continuity were indicated as "present". The heat conduction confirmed glass block was cut perpendicular to the wire and polished on both sides. The thickness of the glass was 1 mm. One side of this glass was heated to 70 ° C., and the temperature of the wire on the opposite side was measured. Those having a temperature rise of 50 ° C. or more were indicated as having “heat conduction”.

[0038]

[Table 3]

[Brief description of the drawings]

FIG. 1 is a scheme for manufacturing a substrate of the present invention.

FIG. 2 is a scheme for manufacturing a substrate of the present invention.

FIG. 3 is an explanatory diagram of a method for measuring the amount of warpage of a substrate.

FIG. 4 is a perspective view of an example of a mounting board according to the present invention;
(A) shows a state where wiring is attached to the conductor of the substrate of the present invention, and (B) shows a state where a semiconductor chip as an electronic component is mounted on the substrate shown in (A).

Claims (12)

[Claims] 1. A step of forming a block by embedding one or more linear conductors and / or heat conductors in an insulating material, and forming the block body by a linear conductor and / or A method for manufacturing a front / back conduction substrate, comprising a step of cutting the heat conductor into two or more pieces so that the front / back conduction occurs. 2. The block body is buried in an insulating material obtained by softening or fluidizing one or more linear conductors and / or thermal conductors, and then solidifying the softened or fluidized insulating material. The production method according to claim 1, which is prepared by causing 3. An electric conductor and / or a heat conductor are sandwiched between at least two plate-like insulating materials, and then the insulating material is softened and pressed to apply the electric conductor and / or heat to the insulating material.
The method according to claim 2, wherein the heat conductor is buried. 4. The method according to claim 1, wherein the insulating material is glass.
4. The production method according to any one of 3. 5. The electric conductor and / or the heat conductor,
The method according to any one of claims 1 to 4, wherein the diameter of the cross section is 3 mm or less. 6. The method according to claim 1, further comprising a step of polishing at least a cut surface of the insulating material after the step of cutting the block body. 7. A method of forming at least one electrode and / or wiring connected to at least one conductor of the front / back conductive substrate obtained by the manufacturing method according to claim 1. Description: Method for manufacturing a wiring board. 8. A substrate having one or two or more conductors and / or heat conductors penetrating through an insulating material, wherein at least the main surface of the insulating material has a maximum waviness of one or more filtered waves.
A front / back through substrate having a thickness of 0 μm or less. 9. A substrate having one or more conductors and / or heat conductors penetrating the insulating material from the front and back, wherein at least the main surface of the insulating material has a warpage of 10 μm /
cm. 10. The substrate according to claim 8, wherein the insulating material is glass. 11. A mounting, wherein at least one electrode and / or wiring connected to at least one conductor of the substrate is formed on the substrate according to any one of claims 8 to 10. substrate. 12. An electronic component mounting board, wherein at least an electronic component is mounted on the board according to claim 11.