JPH0951108A - Light reception light emitting element module and its manufacturing method - Google Patents
Light reception light emitting element module and its manufacturing methodInfo
- Publication number
- JPH0951108A JPH0951108A JP21967595A JP21967595A JPH0951108A JP H0951108 A JPH0951108 A JP H0951108A JP 21967595 A JP21967595 A JP 21967595A JP 21967595 A JP21967595 A JP 21967595A JP H0951108 A JPH0951108 A JP H0951108A
- Authority
- JP
- Japan
- Prior art keywords
- light receiving
- emitting element
- alignment
- groove
- mounting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Led Devices (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、光受発光素子モジ
ュールに関し、更に詳細には、光受発光素子を実装基板
上に実装した際に、光受発光素子が実装基板に対して高
精度に位置決めされている光受発光素子モジュールに関
するものであり、また光受発光素子を実装基板に対して
高精度に位置決めできる光受発光素子モジュールの製作
方法に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a light receiving and emitting element module, and more particularly, when the light receiving and emitting element is mounted on a mounting substrate, the light receiving and emitting element is highly accurately mounted on the mounting substrate. The present invention relates to a positioned light receiving / emitting element module, and also relates to a method of manufacturing a light receiving / emitting element module capable of positioning a light receiving / emitting element with respect to a mounting substrate with high accuracy.
【０００２】[0002]
【従来の技術】フォトダイオード（以下、ＰＤと言
う）、レーザダイオード等の光受発光素子及び光受発光
素子を複数集合したアレイを実装基板上に実装する方法
として、従来から、光受発光素子の素子基板を内方に、
即ち実装基板の実装面に向けて光受発光素子を実装基板
上に実装する、いわゆるジャンクション・アップ形態で
光受発光素子を実装基板上に実装する方式（以下、ジャ
ンクション・アップ方式と言う）と、光受発光素子基板
を外方に向けて光受発光素子を実装基板上に実装する、
いわゆるジャンクション・ダウン形態で光受発光素子を
実装基板上に実装する方法（以下、ジャンクション・ダ
ウン方式と言う）とが採用されている。2. Description of the Related Art As a method of mounting a light receiving / emitting element such as a photodiode (hereinafter referred to as PD), a laser diode, etc. and an array of a plurality of light receiving / emitting elements mounted on a mounting substrate, a light receiving / emitting element has been conventionally used. Inward of the element substrate of
That is, a method of mounting the light receiving / emitting element on the mounting board toward the mounting surface of the mounting board, that is, a method of mounting the light receiving / emitting element on the mounting board in a so-called junction up mode (hereinafter referred to as a junction up method). , Mounting the light receiving and emitting element on the mounting substrate with the light receiving and emitting element substrate facing outward,
A method of mounting a light receiving / emitting element on a mounting board in a so-called junction down mode (hereinafter referred to as a junction down method) is adopted.
【０００３】ジャンクション・アップ方式では、光受発
光素子は、光受発光素子の裏面電極と実装基板の電極パ
ッドとの間に半田を介在させ、両電極を加熱して半田を
融着させる、いわゆるダイ・ボンデイング法により実装
基板上に実装される。ボンデイングに使用される半田
は、通常、金・錫（Ａｕ−Ｓｎ）、金・シリコン（Ａｕ
−Ｓｉ）、金・ゲルマニウム（Ａｕ−Ｇｅ）等の硬質共
晶半田、又は低融点の鉛、インジウム、錫等の混合半田
である。通常は、市販の厚さ２０μｍ程度の半田テープ
を切断して、半田シートを作り、それを光受発光素子の
裏面電極と実装基板の電極パッドとの間に介在させ、加
熱、融着して、両者を電気的且つ機械的に接続してい
る。別法として、実装基板の電極パッド上に球状半田バ
ンプを予め形成しておき、光受発光素子の裏面電極と接
触させ、半田バンプを加熱、溶融させ、溶融の際の表面
張力によるセルフアライメント効果を利用して、ボンデ
イングする方法も行われている。In the junction-up system, the light-receiving / emitting element has a so-called solder interposed between the back electrode of the light-receiving / emitting element and the electrode pad of the mounting substrate to heat both electrodes to fuse the solder. It is mounted on a mounting board by the die bonding method. Solder used for bonding is usually gold / tin (Au-Sn) or gold / silicon (Au).
-Si), a hard eutectic solder such as gold / germanium (Au-Ge), or a mixed solder of low melting point lead, indium, tin or the like. Usually, a commercially available solder tape having a thickness of about 20 μm is cut to form a solder sheet, which is interposed between the back surface electrode of the light receiving / emitting element and the electrode pad of the mounting substrate, heated and fused. , Both are electrically and mechanically connected. Alternatively, a spherical solder bump is formed in advance on the electrode pad of the mounting board, and the solder bump is heated and melted by contacting it with the back electrode of the light receiving and emitting element, and the self-alignment effect due to the surface tension during melting. There is also a method of bonding using.
【０００４】ジャンクション・ダウン方式では、光受発
光素子を実装する場合、そのｐｎ接合面は、ボンデイン
グする面から高々２〜４μｍ程度の距離しか離れていな
い。従って、半田の融着によるボンデイングを行うと、
半田の盛り上がりが数μｍオーダーにも及ぶため、ＰＮ
接合界面に短絡故障が生ずる。そこで、通常、光受発光
素子のボンデイング電極面に数μｍ程度の金の厚いメッ
キ層を積層することにより、ｐｎ接合面をボンデイング
面から離して半田の盛上がりによる短絡を防止してい
る。In the junction down method, when a light emitting / receiving element is mounted, its pn junction surface is separated from the bonding surface by a distance of at most 2 to 4 μm. Therefore, if the bonding by solder fusion is performed,
Since the solder rises up to the order of several μm, PN
Short-circuit failure occurs at the joint interface. Therefore, in general, a thick plating layer of gold of about several μm is laminated on the bonding electrode surface of the light receiving / emitting element to separate the pn junction surface from the bonding surface to prevent a short circuit due to rising solder.
【０００５】[0005]
【発明が解決しようとする課題】ところで、最近、情報
関連或いは通信関連の技術分野では、情報伝達及び作動
の高速化が益々要求されている。例えば、計算機の分野
においては、計算機用回路の高速化に伴い配線接続の光
化が進み、そのため高精度の光接続部品が要求されてい
る。また、光通信の分野では、光加入者網システムでの
光化が進展するにつれ双方向光送受信モジュール等の部
品で高精度の光素子モジュールが要求されるようになっ
て来た。そこで、光素子同士を、光部品同士を、或いは
光素子と光部品とを相互に光接続するに際して、光伝送
空間を極力短くするため、レンズ系等のｎ長光路型結合
方式に代わって、それら光素子、光部品等を直接突き合
わせ接続するバット・ジョイント（Ｂｕｔｔ−Ｊｏｉｎ
ｔ）方式が採用され始めている。しかも、バット・ジョ
イント方式により光素子、光部品等を相互に光接続する
場合でも、接続による損失が、レンズ系の結合と変らな
い程度の極めて低い損失であることが要求されている。By the way, recently, in the technical field related to information or communication, there is an increasing demand for higher speed of information transmission and operation. For example, in the field of computers, with the increase in speed of computer circuits, the optical connection of wiring has been advanced, and therefore high-precision optical connection parts are required. Further, in the field of optical communication, with the progress of opticalization in optical subscriber network systems, high-precision optical element modules have been required for parts such as bidirectional optical transceiver modules. Therefore, in order to make the optical transmission space as short as possible when optically connecting optical elements to each other, or optical components to each other, or optical elements and optical components to each other, an n-long optical path type coupling system such as a lens system is replaced, Butt-Join that directly butts and connects these optical elements, optical components, etc.
The t) method is beginning to be adopted. Moreover, even when the optical elements, optical components, etc. are optically connected to each other by the butt joint method, it is required that the loss due to the connection is extremely low so as not to change from the coupling of the lens system.
【０００６】また、バット・ジョイント方式の光接続を
経済的に行うために、バット・ジョイント方式のモジュ
ールは、調芯型光軸位置合わせ方式から、無調芯型ピン
嵌合接続方式へ移行しつつある。無調芯接続を行うに
は、ピン嵌合型実装基板上に形成された電極パッド上の
所定位置に光受発光素子を超高精度で直接ダイ・ボンデ
イング出来ることが不可欠である。しかし、レンズ系の
結合とは異なり、バット・ジョイント方式の結合におい
ては、フォトダイオード、マウントコネクタ、光ファイ
バ、受動光導波路部品等の受光素子の光軸が、ＬＤ等の
発光素子の発光面位置（光軸）から僅かにずれても、大
きな結合損失が発生する。従って、結合損失を低減する
ために、バット・ジョイント方式による実装で許容され
る平面位置的誤差は、実装基板の縦方向及び横方向とも
１μｍ以下である。また、高さ方向も、同じ程度の誤差
しか許されない。In order to economically perform the butt-joint type optical connection, the butt-joint type module is changed from the centering type optical axis alignment system to the non-centering type pin fitting connection system. It's starting. In order to perform non-centering connection, it is indispensable that the light emitting / receiving element can be directly die-bonded at a predetermined position on the electrode pad formed on the pin-fitting type mounting substrate with ultra-high accuracy. However, unlike the coupling of the lens system, in the coupling of the butt joint method, the optical axis of the light receiving element such as the photodiode, mount connector, optical fiber, or passive optical waveguide component is the light emitting surface position of the light emitting element such as LD. Even with a slight deviation from the (optical axis), a large coupling loss occurs. Therefore, in order to reduce the coupling loss, the planar positional error allowed in mounting by the butt joint method is 1 μm or less in both the vertical and horizontal directions of the mounting board. Also, in the height direction, the same degree of error is allowed.
【０００７】しかし、従来の半田付けによるダイ・ボン
デイング法を適用してバット・ジョイント方式により実
装しようとしても、金メッキ層の厚さ、半田厚さ、半田
溶融時に発生する表面張力、半田の沈み量等がバラツキ
つくため、その位置決め精度が高々数μｍである。従っ
て、バット・ジョイント方式の実装に対して要求される
１μm 以下の位置決め精度を満たすことはできない。ま
た、セルフアラインメントを可能とする球状半田バンプ
によるダイ・ボンデイングは、バンプの高さ、幅、直径
等が不均一でバラつくために実装精度を制御することが
極めて困難であって、同じくバット・ジョイント方式の
実装に対して要求される１μm 以下の位置決め精度を満
たすことはできない。更には、工程が複雑であるため、
製作コストが高く、コスト面でも要求を満たすこと難し
い。以上の問題は、ジャンクション・アップ方式、或い
はジャンクション・ダウン方式にかかわらず、同じであ
る。However, even if the conventional die bonding method by soldering is applied and the butt joint method is used for mounting, the thickness of the gold plating layer, the solder thickness, the surface tension generated when the solder is melted, and the amount of sinking of the solder. The positioning accuracy is several μm at the most. Therefore, it is not possible to satisfy the positioning accuracy of 1 μm or less required for mounting the butt joint method. Also, in die bonding with spherical solder bumps that enable self-alignment, it is extremely difficult to control the mounting accuracy because the height, width, diameter, etc. of the bumps are uneven and it is very difficult It is not possible to meet the positioning accuracy of 1 μm or less, which is required for joint type mounting. Furthermore, since the process is complicated,
The manufacturing cost is high, and it is difficult to meet the requirements in terms of cost. The above problems are the same regardless of the junction up method or the junction down method.
【０００８】以上の状況に照らして、本発明は、光受発
光素子が高い位置決め精度で実装基板上に実装されてい
る光受発光素子モジュールを提供することであり、また
その光受発光素子モジュールの製作方法を提供すること
である。In view of the above situation, the present invention is to provide a light receiving and emitting element module in which the light receiving and emitting element is mounted on a mounting substrate with high positioning accuracy, and the light receiving and emitting element module is provided. Is to provide a manufacturing method of.
【０００９】[0009]
【課題を解決するための手段】上記目的を達成するため
に、本発明に係る光受発光素子モジュールは、活性層を
含むストライプ部を有する少なくとも１個の光受発光素
子と実装基板とを有し、素子基板を外方にストライプ部
を内方に向けて光受発光素子を実装基板上に実装した光
受発光素子モジュールであって、光受発光素子は、スト
ライプ部の両側に延びる第１及び第２溝と、第１及び第
２溝のストライプ部と反対側に延在する第１及び第２領
域部の上面と第１及び第２溝の溝壁とによりそれぞれ形
成された直線状の第１及び第２位置合わせエッジと、ス
トライプ部に交差する方向に延在する第１及び第２領域
部の端面と第１及び第２位置合わせエッジとの交点によ
りそれぞれ定まる第１及び第２位置合わせ点とを備え、
実装基板は、実装面と、各光受発光素子毎に実装面に光
受発光素子のストライプ部より長く形成された長溝とを
備え、長溝の両側に延在する第１及び第２基板領域部の
上面と長溝の溝壁とによりそれぞれ形成された第１及び
第２溝エッジは、それぞれ第１及び第２位置合わせエッ
ジに一致して延びる共に第１及び第２位置合わせ点に一
致する第１及び第２基準点を備え、光受発光素子の各々
が、第１位置合わせエッジ及び第１位置合わせ点をそれ
ぞれ第１溝エッジ及び第１基準点に一致させ、第２位置
合わせエッジ及び第２位置合わせ点をそれぞれ第２溝エ
ッジ及び第２基準点に一致させて位置決めされているこ
とを特徴としている。In order to achieve the above object, a light receiving and emitting element module according to the present invention has at least one light receiving and emitting element having a stripe portion including an active layer and a mounting substrate. A light receiving / emitting element module in which a light receiving / emitting element is mounted on a mounting substrate with the element substrate facing outward and the stripe portion facing inward, wherein the light receiving / emitting element extends to both sides of the stripe portion. A straight line formed by the upper surface of the first and second regions and the groove walls of the first and second grooves, which extend on the opposite side of the stripe portions of the first and second grooves. First and second positions determined by the first and second alignment edges and the intersections of the first and second alignment edges with the end faces of the first and second region portions extending in the direction intersecting the stripe portion, respectively. With a matching point,
The mounting substrate includes a mounting surface and long grooves that are formed on the mounting surface for each light receiving and emitting element and are longer than the stripe portion of the light receiving and emitting element, and first and second substrate region portions that extend on both sides of the long groove. First and second groove edges respectively formed by the upper surface of the groove and the groove wall of the long groove extend corresponding to the first and second alignment edges, respectively, and also correspond to the first and second alignment points. And a second reference point, each of the light receiving and emitting elements aligns the first alignment edge and the first alignment point with the first groove edge and the first reference point, respectively, and the second alignment edge and the second alignment point. It is characterized in that the alignment points are aligned with the second groove edge and the second reference point, respectively.
【００１０】本発明で言う光受発光素子とは、レーザダ
イオード等の活性層を含むストライプ領域を有する光発
光素子、ｐｉｎホトダイオード等の活性層を含むストラ
イプ領域を有する光受光素子を言う。光受発光素子のス
トライプ部の上面が、第１及び第２領域部の上面の双方
より高い位置にある必要はなく、同じ高さ或いは低い位
置にあっても良い。但し、ストライプ部の上面が、第１
及び第２領域部の上面の双方より高い場合には、実装基
板の長溝は、ストライプ部の上面が長溝の底面に接触し
ないような深さに形成されていることが必要である。The light receiving and emitting element referred to in the present invention means a light emitting element having a stripe region including an active layer such as a laser diode, and a light receiving element having a stripe region including an active layer such as a pin photodiode. The upper surface of the stripe portion of the light receiving / emitting element does not have to be higher than both the upper surfaces of the first and second region portions, and may be at the same height or lower position. However, the upper surface of the stripe portion is the first
If both are higher than the upper surface of the second region portion, the long groove of the mounting substrate needs to be formed to a depth such that the upper surface of the stripe portion does not contact the bottom surface of the long groove.
【００１１】本発明で使用する実装基板は、シリコン、
セミック、金属製ステム等で形成された絶縁性又は導電
性材料で形成された基板であって、上面には電極及び配
線パターンが形成されている。望ましくは、実装基板と
してヒートシンク機能を有する基板を使用する。導電性
材料の場合には、絶縁膜が表面に成膜されている。第１
及び第２溝は、実装基板の横方向、縦方向の位置決め用
のエッジを形成すると共にストライプ部を電気的に絶縁
するために、かつ静電容量低減のために設けられてい
る。また、第１及び第２位置合わせエッジは、少なくと
も直線である必要があり、相互に平行であることが望ま
しい。The mounting substrate used in the present invention is silicon,
The substrate is formed of an insulating or conductive material such as a ceramic or a stem made of metal, and has electrodes and wiring patterns formed on the upper surface. Desirably, a board having a heat sink function is used as a mounting board. In the case of a conductive material, an insulating film is formed on the surface. First
The second groove and the second groove are provided to form edges for lateral and vertical positioning of the mounting board, electrically insulate the stripe portion, and to reduce electrostatic capacitance. Also, the first and second alignment edges must be at least straight lines, preferably parallel to each other.
【００１２】光受発光素子が、第１位置合わせエッジ、
第２位置合わせエッジ、第１位置合わせ点、及び第２位
置合わせ点を備え、実装基板がそれらに対応する第１溝
エッジ、第２溝エッジ、第１基準点及び第１基準点を備
え、実装に際し、第１位置合わせエッジ及び第１位置合
わせ点をそれぞれ第１溝エッジ及び第１基準点に一致さ
せ、第２位置合わせエッジ及び第２位置合わせ点をそれ
ぞれ第２溝エッジ及び第２基準点に一致させて位置決め
することにより、光受発光素子は実装基板の横方向、縦
方向に関し高い位置決め精度で以て実装基板上に位置合
わせされることができる。The light emitting / receiving element has a first alignment edge,
A second alignment edge, a first alignment point, and a second alignment point, and the mounting board includes a first groove edge, a second groove edge, a first reference point, and a first reference point corresponding to them. At the time of mounting, the first alignment edge and the first alignment point are respectively matched with the first groove edge and the first reference point, and the second alignment edge and the second alignment point are respectively formed with the second groove edge and the second reference point. By positioning the light receiving and emitting elements so as to coincide with the points, the light receiving and emitting element can be aligned on the mounting board with high positioning accuracy in the horizontal and vertical directions of the mounting board.
【００１３】本発明の好適な実施態様は、光受発光素子
の第１及び第２領域部が、その上面に平坦な表面電極を
有する第１及び第２電極部を構成し、実装基板の第１及
び第２基板領域部が、それぞれ、その上面に第１及び第
２基準点から第１及び第２溝エッジに沿って平坦に延在
し、かつ表面電極を有する第１及び第２電極パッドを備
え、光受発光素子と実装基板とは、第１電極部と第１電
極パッドとの接着及び第２電極部と第２電極パッドとの
接着の少なくとも一方の接着により電気的に接続され、
かつ双方の接着により機械的に接合されていることを特
徴としている。In a preferred embodiment of the present invention, the first and second area portions of the light receiving and emitting element constitute first and second electrode portions having a flat surface electrode on the upper surface thereof, and the first and second electrode portions of the mounting substrate are provided. First and second electrode pads having first and second substrate region portions, which extend flat from the first and second reference points along the first and second groove edges on the upper surface thereof and have surface electrodes, respectively. The light receiving and emitting element and the mounting substrate are electrically connected by adhesion of at least one of adhesion between the first electrode portion and the first electrode pad and adhesion between the second electrode portion and the second electrode pad,
Moreover, it is characterized in that they are mechanically joined by adhesion of both.
【００１４】本実施態様で、電気的に接続するには、通
常、従来からの半田接合により行うことができる。ま
た、これにより機械的にも接合できる。光受発光素子の
第１及び第２電極部、並びに実装基板の第１及び第２電
極パッド上にＳｎ、Ｐｂ等を蒸着させて半田材層を設け
ることにより、従来の厚い、例えば２０μｍ程度の厚い
テープ半田を使わずに光受発光素子を実装基板上に高い
位置決め精度で固着、実装することができる。また、第
１及び第２電極部を厚み数百ｎｍオーダの高精度で形成
された金属薄膜で構成することにより、光受発光素子の
活性層と第１及び第２電極部の表面との位置関係を正確
に把握でき、実装後、活性層が、実装基板の基準面、例
えば実装面に対する位置関係を確認できる。In the present embodiment, the electrical connection can usually be made by conventional solder joining. Also, this allows mechanical joining. By depositing Sn, Pb, etc. on the first and second electrode portions of the light receiving and emitting element and the first and second electrode pads of the mounting substrate to provide the solder material layer, the thickness of the conventional thick, for example, about 20 μm The light receiving and emitting element can be fixed and mounted on the mounting substrate with high positioning accuracy without using thick tape solder. In addition, by forming the first and second electrode portions with a metal thin film formed with high accuracy on the order of several hundreds nm, the positions of the active layer of the light receiving and emitting element and the surfaces of the first and second electrode portions The relationship can be accurately grasped, and after mounting, the active layer can confirm the positional relationship with respect to the reference surface of the mounting board, for example, the mounting surface.
【００１５】また、本発明に係る更に好適な実施態様で
は、実装基板は、長溝の一端が開口する開口端面を備
え、かつ第１及び第２基準点は、開口端面と第１及び第
２溝エッジとの交点で定まり、光受発光素子の光出射端
面又は光入射端面を構成するストライプ部の端面が、実
装基板の開口端面と同じ平面内にあることを特徴として
いる。In a further preferred embodiment of the present invention, the mounting board has an opening end face at which one end of the long groove opens, and the first and second reference points are the opening end face and the first and second grooves. It is characterized in that the end face of the stripe portion, which is determined by the intersection with the edge and constitutes the light emitting end face or the light incident end face of the light receiving and emitting element, is in the same plane as the opening end face of the mounting substrate.
【００１６】以上の構成により、ストライプ部の端面、
第１及び第２電極部の端面が実装基板の開口端面と同じ
平面内にあるように光受発光素子を実装基板に実装でき
るので、更に高い位置決め精度で実装できる。また、実
装基板の端面に光受発光素子が実装されているので、他
の光受動部品、例えば光ファイバアレイ、光導波路、光
コネクタ等との光接続、光入出力を容易に行うことがで
きる。また、実装基板を多角形基板で形成し、かつ多角
形基板の各端面毎に長溝及び複数組の電極パターン及び
配線パターンをそれぞれ形成することにより、一枚の実
装基板上に複数の光受発光素子を実装することができ
る。しかも、実装基板が多角形となっているので、最適
な位置の端面に光受発光素子を実装できるので、実装回
路の密度、光の入出力ポート数等に対する自由度が大き
くなる。With the above structure, the end surface of the stripe portion,
Since the light receiving / emitting element can be mounted on the mounting board so that the end surfaces of the first and second electrode portions are in the same plane as the opening end surface of the mounting board, mounting can be performed with higher positioning accuracy. In addition, since the light receiving and emitting element is mounted on the end surface of the mounting substrate, it is possible to easily perform optical connection with other optical passive components such as an optical fiber array, an optical waveguide, an optical connector, and optical input / output. . Further, by forming the mounting substrate with a polygonal substrate and forming a long groove and a plurality of sets of electrode patterns and wiring patterns on each end face of the polygonal substrate, a plurality of light receiving and emitting lights can be formed on one mounting substrate. The device can be mounted. Moreover, since the mounting substrate has a polygonal shape, the light receiving and emitting elements can be mounted on the end face at the optimum position, so that the flexibility of the mounting circuit density, the number of light input / output ports, and the like increases.
【００１７】本発明の更に好適な実施態様は、実装基板
が、光受発光素子以外の光受動部品との無調芯光接続を
行う位置決め基準を備えていることを特徴としている。
位置決め基準とは、光受動部品を位置決めする際の基準
になる印、或いはマークであって、例えばＶ溝、十字溝
等である。位置決め基準を設けることにより、光受動部
品を高い位置決め精度で実装基板上に実装できるので、
実装された光受発光素子から光受動部品への光出力若し
くは光入力の光接続を低い結合損失で行うことができ
る。A further preferred embodiment of the present invention is characterized in that the mounting board is provided with a positioning reference for making an unaligned optical connection with an optical passive component other than the light receiving and emitting element.
The positioning reference is a mark or mark that serves as a reference when positioning the optical passive component, and is, for example, a V groove, a cross groove, or the like. By providing the positioning reference, the optical passive component can be mounted on the mounting board with high positioning accuracy.
Optical connection from the mounted light receiving and emitting element to the optical passive component for optical output or optical input can be performed with low coupling loss.
【００１８】また、本発明に係る光受発光素子モジュー
ルの製作方法は、第１位置合わせエッジ及び第１位置合
わせ点をそれぞれ第１溝エッジ及び第１基準点に一致さ
せ、第２位置合わせエッジ及び第２位置合わせ点をそれ
ぞれ第２溝エッジ及び第２基準点に一致させるように光
受発光素子の各々を実装基板上に位置決めすることを特
徴としている。これにより、実装に際し、光受発光素子
を高精度で実装基板上に容易に位置決めできる。Also, in the method of manufacturing the light emitting and receiving element module according to the present invention, the first alignment edge and the first alignment point are respectively aligned with the first groove edge and the first reference point, and the second alignment edge is formed. Each of the light receiving and emitting elements is positioned on the mounting substrate so that the second alignment point and the second alignment point coincide with the second groove edge and the second reference point, respectively. This allows the light receiving and emitting element to be easily positioned on the mounting substrate with high accuracy during mounting.
【００１９】[0019]
【実施例】以下、添付図面を参照し、実施例に基づいて
本発明をより詳細に説明する。実施例１ 本実施例は、光受発光素子としてレーザダイオード（以
下、レーザチップと言う）が使用され、そのレーザチッ
プが実装基板上にジャンクション・ダウン方式で実装さ
れている、本発明に係る光受発光素子モジュールの実施
例である。図１は本発明に係る光受発光素子モジュール
の実施例の概略構造を示すために光受発光素子としての
実装されるレーザチップと実装基板とを分離して示した
斜視図、図２はレーザチップの概略構成を示す斜視図、
図３と図４はレーザチップと実装基板との位置決めを説
明する模式的断面図及び斜視図、更に図５は光受発光素
子モジュールの平面図である。DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below in more detail with reference to the accompanying drawings. Example 1 In this example, a laser diode (hereinafter referred to as a laser chip) is used as a light receiving and emitting element, and the laser chip is mounted on a mounting substrate by a junction down method. It is an example of a light emitting and receiving element module. FIG. 1 is a perspective view showing a laser chip mounted as a light receiving and emitting element and a mounting substrate separately to show a schematic structure of an embodiment of the light receiving and emitting element module according to the present invention. FIG. A perspective view showing a schematic configuration of a chip,
3 and 4 are schematic sectional views and perspective views for explaining the positioning of the laser chip and the mounting substrate, and FIG. 5 is a plan view of the light receiving and emitting element module.
【００２０】本実施例の光受発光素子モジュール１０
（以下、光モジュール１０と略称する）は、図１に示す
ように、レーザチップ１２と、実装面１４を備え、その
上にレーザチップを実装した長方形の実装基板１６とか
ら構成されている。レーザチップ１２は、図２に示すよ
うに、半導体基板１８上にＭＱＷ活性層２０を有する埋
込型レーザチップである。レーザチップ１２は、ｎ+型
半導体基板１８上に形成されたｎ型クラッド層２２上の
中央で長手方向に延びる長さ３００μm のリッジ部２４
と、その両側にリッジ部２４に平行に設けられた第１電
極部２６と、第２電極部２８と、リッジ部２４と第１電
極部２６との間に設けられた第１溝３０と、リッジ部２
４と第２電極部２８との間に設けられた第２溝３２とを
備えている。Light receiving and emitting element module 10 of this embodiment
As shown in FIG. 1, the optical module 10 (hereinafter abbreviated as an optical module) includes a laser chip 12, a mounting surface 14, and a rectangular mounting substrate 16 on which the laser chip is mounted. The laser chip 12 is an embedded laser chip having an MQW active layer 20 on a semiconductor substrate 18, as shown in FIG. The laser chip 12 has a ridge portion 24 having a length of 300 μm and extending in the longitudinal direction at the center on the n-type cladding layer 22 formed on the n + -type semiconductor substrate 18.
A first electrode portion 26 provided on both sides of the first electrode portion 26 in parallel with the ridge portion 24, a second electrode portion 28, and a first groove 30 provided between the ridge portion 24 and the first electrode portion 26. Ridge part 2
4 and the second groove 32 provided between the second electrode portion 28.
【００２１】リッジ部２４は、ｎ型クラッド層２２上に
形成されたＭＱＷ活性層２０とその両側及び上面に形成
されたｐ型クラッド層３３と、ｐ型クラッド層３３の両
側を埋め込むｎ型ブロッキング層３４と、ｐ型クラッド
層３３及びｎ型ブロッキング層３４上の上部ｐ型クラッ
ド層３６と、ｐ型電極層３８とを備えている。リッジ部
２４の少なくとも一方の端面４０（図１で前端面）は、
リッジ部２４に直交する面として形成された光出射面を
構成し、第１電極部２６及び第２電極部２８のそれぞれ
の前端面４２、４４は光出射面と同じ面内にある。The ridge portion 24 has an MQW active layer 20 formed on the n-type cladding layer 22, a p-type cladding layer 33 formed on both sides and an upper surface of the MQW active layer 20, and n-type blocking filling both sides of the p-type cladding layer 33. A layer 34, an upper p-type cladding layer 36 on the p-type cladding layer 33 and the n-type blocking layer 34, and a p-type electrode layer 38 are provided. At least one end surface 40 (front end surface in FIG. 1) of the ridge portion 24 is
The light emitting surface is formed as a surface orthogonal to the ridge portion 24, and the front end surfaces 42 and 44 of the first electrode portion 26 and the second electrode portion 28 are in the same plane as the light emitting surface.
【００２２】第１電極部２６及び第２電極部２８は、そ
れぞれｎ型クラッド層２２上に順次形成されているｐ型
クラッド層、ｎ型ブロッキング層３４、電極層４６、及
び半田層４８とを備えている。第１電極部２６の最上
面、即ち電極層４６と第１溝３０の溝壁とにより形成さ
れるエッジは、及び第２電極部の最上面、即ち電極層４
６と第２溝３２の溝壁とにより形成されるエッジは、そ
れぞれ第１位置合わせエッジ５０及び第２位置合わせエ
ッジ５２を構成している。第１位置合わせエッジ５０及
び第２位置合わせエッジ５２は、１００μm の幅で相互
に平行に延在し、かつそれぞれ第１電極部２６及び第２
電極部２８の前端面４２及び４４に直交している。第１
位置合わせエッジ５０と第１電極部２６の前端面４２と
の交点及び第２位置合わせエッジ５２と第２電極部２８
の前端面４４との交点は、それぞれ第１位置合わせ点５
４及び第２位置合わせ点５６を構成している。The first electrode portion 26 and the second electrode portion 28 respectively include a p-type cladding layer, an n-type blocking layer 34, an electrode layer 46, and a solder layer 48 which are sequentially formed on the n-type cladding layer 22. I have it. The uppermost surface of the first electrode portion 26, that is, the edge formed by the electrode layer 46 and the groove wall of the first groove 30, and the uppermost surface of the second electrode portion, that is, the electrode layer 4
The edges formed by 6 and the groove wall of the second groove 32 form a first alignment edge 50 and a second alignment edge 52, respectively. The first alignment edge 50 and the second alignment edge 52 extend parallel to each other with a width of 100 μm, and are respectively the first electrode portion 26 and the second alignment edge 52.
It is orthogonal to the front end faces 42 and 44 of the electrode portion 28. First
The intersection of the alignment edge 50 and the front end face 42 of the first electrode portion 26, and the second alignment edge 52 and the second electrode portion 28.
The intersections with the front end face 44 of the
4 and the second alignment point 56.
【００２３】第１電極部２６及び第２電極部２８の電極
層４６は、Ｔｉ層、Ｐｔ層及びＡｕ層の積層構造で形成
されたｐ側オーミック電極を構成し、更に、最上層のＡ
ｕ層の表面上のパターニングされた所定領域内に順次厚
み０．５μｍのＳｎ半田薄膜及び厚み数百ｎｍのＡｕ半
田薄膜からなる半田層４８が積層されている。尚、半田
層４８では、電極層４６のＡｕ層、Ｓｎ半田薄膜及びそ
の外側のＡｕ半田薄膜が、Ｓｎが溶融した時、共晶を生
ずるように重量比が設定されている。尚、第１電極部２
６及び第２電極部２８の電極層４６は、適当な手段（図
示せず）によりリッジ部２４の電極層２８と電気的に接
続されている。半田層４８のの厚みが１μｍ以下に設定
されているので、半田の厚みにバラツキがあっても、高
さ方向の位置決め誤差は、１μｍ以下になる。一方、ｎ
+半導体基板１８の裏面には、Ａｕ／Ｇｅ／Ｎｉ層とそ
の上のＡｕ層とからなるｎ側電極層５８が形成されてい
る。The electrode layer 46 of the first electrode portion 26 and the second electrode portion 28 constitutes a p-side ohmic electrode formed of a laminated structure of a Ti layer, a Pt layer and an Au layer, and further the uppermost layer A
A solder layer 48 composed of a Sn solder thin film having a thickness of 0.5 μm and an Au solder thin film having a thickness of several hundreds nm is sequentially stacked in a patterned predetermined region on the surface of the u layer. In the solder layer 48, the weight ratio of the Au layer of the electrode layer 46, the Sn solder thin film, and the Au solder thin film on the outside thereof is set so as to generate a eutectic when Sn is melted. The first electrode portion 2
6 and the electrode layer 46 of the second electrode portion 28 are electrically connected to the electrode layer 28 of the ridge portion 24 by an appropriate means (not shown). Since the thickness of the solder layer 48 is set to 1 μm or less, even if the thickness of the solder varies, the positioning error in the height direction is 1 μm or less. On the other hand, n
+ On the back surface of the semiconductor substrate 18, an n-side electrode layer 58 composed of an Au / Ge / Ni layer and an Au layer thereabove is formed.
【００２４】一方、実装基板１６は、高絶縁性のＳｉ基
板で形成されていて、上面に高平坦度の実装面１４を有
し、一方の端面に実装面１４に直交する端面６０（図１
では、前端面）を備えている。尚、導電性Ｓｉ基板を実
装基板として用いる場合には、約０．１μｍの厚みのＳ
ｉＯ2 膜のような絶縁膜を予めＳｉ基板主面全面に、例
えばスパッタリング等で成膜する。１００μｍ幅で長さ
５００μm 〜１０００μm の長溝６２が実装面１２上に
端面６０に直交し、かつ端面６０に開口端を有するよう
に形成されている。長溝６２は、レーザチップ１２の中
央リッジ部２４を収容するために、リッジ部２４の長さ
より長く、かつ約１０μｍの深さを有する。長溝６２
は、高い寸法精度を備えるように、例えばＫＯＨによる
方向性エッチング法により実装基板１２をエッチングし
て形成されている。On the other hand, the mounting board 16 is formed of a highly insulating Si substrate, has a mounting surface 14 with high flatness on the upper surface, and has an end surface 60 (FIG. 1) which is orthogonal to the mounting surface 14 on one end surface.
Then, the front end face) is provided. When a conductive Si substrate is used as a mounting substrate, S having a thickness of about 0.1 μm is used.
An insulating film such as an iO 2 film is previously formed on the entire main surface of the Si substrate by, for example, sputtering. A long groove 62 having a width of 100 μm and a length of 500 μm to 1000 μm is formed on the mounting surface 12 so as to be orthogonal to the end face 60 and have an open end at the end face 60. The long groove 62 is longer than the length of the ridge portion 24 and has a depth of about 10 μm to accommodate the central ridge portion 24 of the laser chip 12. Long groove 62
Are formed by etching the mounting substrate 12 by, for example, a directional etching method using KOH so as to have high dimensional accuracy.
【００２５】長溝６２の両側には、端面６０から奥に向
かって第１電極部２４及び第２電極部２６の電極層４６
とそれぞれほぼ同じ形状、大きさの第１電極パッド６４
及び第２電極パッド６６が設けられている。以上の構成
により、第１電極パッド６４の上面及び第２電極パッド
６６の上面と長溝６２の溝壁とによりそれぞれ形成され
た第１及び第２溝エッジ６８、７０は、レーザチップ１
２を実装した際に、それぞれ第１及び第２位置合わせエ
ッジ５０、５２に一致する。また、第１及び第２溝エッ
ジ６８、７０と端面６０との交点７２、７４は、実装の
際の第１及び第２基準点となり、それぞれ第１及び第２
位置合わせ点５４、５６に一致する。On both sides of the long groove 62, the electrode layers 46 of the first electrode portion 24 and the second electrode portion 26 extend inward from the end face 60.
And the first electrode pad 64 having substantially the same shape and size as
And a second electrode pad 66 are provided. With the above configuration, the first and second groove edges 68 and 70 formed by the upper surface of the first electrode pad 64 and the upper surface of the second electrode pad 66 and the groove wall of the long groove 62 respectively form the laser chip 1.
When the 2 is mounted, it coincides with the first and second alignment edges 50 and 52, respectively. Also, the intersections 72, 74 of the first and second groove edges 68, 70 and the end face 60 become the first and second reference points at the time of mounting, and the first and second reference points, respectively.
It coincides with the alignment points 54 and 56.
【００２６】第１電極パッド６４及び第２電極パッド６
６は、それぞれ約５０ｎｍ、５０ｎｍ、５０ｎｍ及び３
５０ｎｍの膜厚のＣｒ、Ｔｉ、ｐｔ及びＡｕの薄膜を順
次蒸着した積層構造で形成されている。更に、長溝６
２、第１電極パッド６４及び第２電極パッド６６の形成
領域外に、レーザチップ１２のｎ型電極層５８のための
ボンデイングパッド７６、電極配線パターン７８、リー
ド足用パッド８０等が形成されている。尚、第１及び第
２電極パッド６４、６６を含め、上述のパターン、パッ
ドは、例えばリフトオフ法により形成できる。The first electrode pad 64 and the second electrode pad 6
6 is about 50 nm, 50 nm, 50 nm and 3 respectively.
It is formed in a laminated structure in which thin films of Cr, Ti, pt and Au having a film thickness of 50 nm are sequentially deposited. Furthermore, the long groove 6
2. Bonding pads 76 for the n-type electrode layer 58 of the laser chip 12, electrode wiring patterns 78, lead foot pads 80, etc. are formed outside the formation regions of the first electrode pad 64 and the second electrode pad 66. There is. The above-described patterns and pads including the first and second electrode pads 64 and 66 can be formed by, for example, a lift-off method.
【００２７】実装に際しては、先ず、図３及び図４に示
すように、レーザチップ１２を実装基板１６上に位置決
めし、次いで半田層４８の加熱、融着により、レーザチ
ップ１２と実装基板１６とを電気的及び機械的に接合す
る。位置決めは、図３及び図４に示すように、画像処理
装置を使用して高精度位置調整及びアライメントを行
い、レーザチップ１２の第１位置合わせ点５４及び第１
位置合わせエッジ５０が、それぞれ実装基板１６の第１
基準点７２及び第１溝エッジ６８に一致し、レーザチッ
プ１２の第２位置合わせ点５６及び第２位置合わせエッ
ジ５２及びが、それぞれ、実装基板１６の第２基準点５
６及び第２溝エッジ７０に一致するように調整する。In mounting, first, as shown in FIGS. 3 and 4, the laser chip 12 is positioned on the mounting substrate 16, and then the solder layer 48 is heated and fused to bond the laser chip 12 to the mounting substrate 16. Are electrically and mechanically joined. As for the positioning, as shown in FIGS. 3 and 4, the image processing apparatus is used to perform high-precision position adjustment and alignment, and the first alignment point 54 and the first alignment point 54 of the laser chip 12 are aligned.
The alignment edges 50 are the first of the mounting board 16 respectively.
The second alignment point 56 and the second alignment edge 52 of the laser chip 12 that coincide with the reference point 72 and the first groove edge 68 are respectively the second reference point 5 of the mounting substrate 16.
6 and the second groove edge 70.
【００２８】次いで、ボンディングツール（図示せず）
により吸着されているレーザチップ１２の第１電極部２
４を実装基板１６の第１電極パッド６４上に、また第２
電極部２８を実装基板１６の第２電極パッド６６上にそ
れぞれ均一に着地させ、レーザチップ１２と実装基板１
６の電極パッド６４、６６に均一な圧力を加えるように
平面型の吸着ツールを用い、両者を密着させる。更に、
レーザチップ１２及び実装基板１６の端面映像をＴＶモ
ニタより観察し、図３及び図４に記載するように、レー
ザチップ位置の微調整を行う。以上により、チップと実
装基板との位置合わせが完璧になる。Next, a bonding tool (not shown)
The first electrode portion 2 of the laser chip 12 adsorbed by the
4 on the first electrode pad 64 of the mounting board 16 and the second
The electrode portions 28 are evenly landed on the second electrode pads 66 of the mounting board 16, respectively.
A flat type suction tool is used so as to apply a uniform pressure to the electrode pads 64 and 66 of No. 6, and they are brought into close contact with each other. Furthermore,
The end surface images of the laser chip 12 and the mounting substrate 16 are observed from the TV monitor, and the laser chip position is finely adjusted as shown in FIGS. 3 and 4. With the above, the alignment between the chip and the mounting board becomes perfect.
【００２９】次いで、レーザチップ１２側と実装基板１
６側の両方から加熱する。尚、実装基板１６側だけから
の加熱でもダイ・ボンデイングは可能である。予め蒸着
されたＳｎ半田が加熱により融解し、上下のＡｕ層と共
晶反応を引き起こし、結局レーザチップ１２の半田層４
８と実装基板１６の第１及び第２電極パッド６４、６６
の最上層であるＡｕ層が混ざり合い、一体化して接合す
る。ボンデイングの条件は、例えば、次のようなもので
ある。 加熱温度 ：２８０〜３２０℃ 荷重 ：２０〜５０ ｇｍｆ 接触接合時間：約３０秒程度 以上により、図５に示すような、光モジュール１０を得
ることができる。Next, the laser chip 12 side and the mounting substrate 1
Heat from both sides. Note that die bonding can be performed by heating only from the mounting substrate 16 side. The pre-deposited Sn solder is melted by heating and causes a eutectic reaction with the upper and lower Au layers, which eventually leads to the solder layer 4 of the laser chip 12.
8 and the first and second electrode pads 64, 66 of the mounting substrate 16.
The Au layer, which is the uppermost layer, is mixed and integrally joined. Bonding conditions are as follows, for example. Heating temperature: 280 to 320 ° C. Load: 20 to 50 gmf Contact bonding time: About 30 seconds By the above, the optical module 10 as shown in FIG. 5 can be obtained.
【００３０】本実施例の光モジュール１０を上述のよう
にして製作し、本実施例の試料光モジュールとし、次い
で、位置決め精度を検査し、本発明に係る光モジュール
の評価を行った。本実施例では、他の光受発光素子を実
装基板１６に実装する際に無調芯光接続を行うための位
置決め基準として、Ｖ溝又はリファレンス・パターン
（共に図示せず）が実装基板１６の実装面１４の両側縁
近傍に設けられている。そのＶ溝又はリファレンス・パ
ターンを位置決め精度検査の基準にして、実装後のレー
ザチップ１２の実装基板１６の縦方向及び横方向に対す
る位置ずれを測定した。結果は、横方向で０．５μｍ、
縦方向で０．３μｍであった。尚、Ｖ溝は、その底がレ
ーザチップ１２を実装基板１６上に実装して本発明に係
る光モジュール１０を構成した時に、レーザチップ１２
のＭＱＷ活性層２０の中心の延長線と実装基板表面とが
一致するようにＶ溝の深さを制御して形成されている。The optical module 10 of this example was manufactured as described above to obtain a sample optical module of this example, and then the positioning accuracy was inspected to evaluate the optical module according to the present invention. In this embodiment, a V-groove or a reference pattern (both not shown) of the mounting substrate 16 is used as a positioning reference for making an unaligned optical connection when mounting another light receiving / emitting element on the mounting substrate 16. It is provided near both side edges of the mounting surface 14. Using the V groove or the reference pattern as a reference for the positioning accuracy inspection, the positional deviation of the mounted laser chip 12 in the vertical direction and the horizontal direction of the mounting substrate 16 was measured. The result is 0.5 μm in the lateral direction,
It was 0.3 μm in the vertical direction. The bottom of the V-groove is the laser chip 12 when the laser chip 12 is mounted on the mounting substrate 16 to form the optical module 10 according to the present invention.
The V-groove depth is controlled so that the extension line at the center of the MQW active layer 20 and the surface of the mounting substrate coincide with each other.
【００３１】横方向の位置ずれの別の評価方法は、赤外
線に透明なＳｉ実装基板１６の裏面から赤外反射顕微鏡
で光モジュール１０を観察し、第１位置合わせエッジ５
０と第１溝エッジ６８とのずれ、及び第２位置合わせエ
ッジ５２と第２溝エッジ７０との位置ズレ、又は実装基
板１６上に形成されたＶ溝又はリファレンス・パターン
と第１位置合わせエッジ５０又は第２位置合わせエッジ
５２との距離を測定することによっても求めることがで
きる。一方、縦方向の位置ズレ量は、Ｖ溝を基準に、レ
ーザチップの発光中心とマスター光ファイバ付きマウン
トコネクタとを接続して赤外線カメラによりレーザ光と
マウントコネクタのその他のファイバ光出力ポートとの
スポット間の距離を画像処理系により精密測定する。こ
れにより、正確な評価ができる。Another method for evaluating the lateral displacement is to observe the optical module 10 with an infrared reflection microscope from the back surface of the Si mounting substrate 16 that is transparent to infrared rays, and then adjust the first alignment edge 5
0 and the first groove edge 68, the second alignment edge 52 and the second groove edge 70 are misaligned, or the V groove or the reference pattern and the first alignment edge formed on the mounting substrate 16. It can also be determined by measuring the distance from 50 or the second alignment edge 52. On the other hand, the amount of positional deviation in the vertical direction is based on the V groove, and the emission center of the laser chip and the mount connector with the master optical fiber are connected to each other, and the laser beam and the other fiber optical output ports of the mount connector are connected by the infrared camera. The distance between spots is precisely measured by an image processing system. This allows accurate evaluation.
【００３２】実施例２ 実施例１のようにボンデイング用半田層４８をレーザチ
ップ１２の第１及び第２電極部２６、２８の電極層４６
上に蒸着しておく代わりに、本実施例においては、実装
基板１６上の第１及び電極パッド６４、６６上に、実施
例１の半田層４８と同じ組成のＳｎ半田薄膜とＡｕ薄膜
を順次蒸着させて半田層とした。これ以外は、実施例１
と全て同じようにして製作して本発明に係る光受発光素
子モジュールの実施例２とした。試料を製作して、実施
例１と同じように位置決め精度を評価したところ、実施
例１と同じ高い位置決め精度であることが確認できた。 Second Embodiment As in the first embodiment, the bonding solder layer 48 is used as the electrode layer 46 of the first and second electrode portions 26 and 28 of the laser chip 12.
Instead of vapor deposition on top, in this embodiment, a Sn solder thin film and an Au thin film having the same composition as the solder layer 48 of the first embodiment are sequentially deposited on the first and electrode pads 64, 66 on the mounting substrate 16. It was vapor-deposited to form a solder layer. Other than this, Example 1
Example 2 of the light receiving and emitting element module according to the present invention was manufactured in the same manner as above. When a sample was manufactured and the positioning accuracy was evaluated in the same manner as in Example 1, it was confirmed that the positioning accuracy was the same as in Example 1.
【００３３】[0033]
【発明の効果】請求項１に記載の発明の構成によれば、
光受発光素子に位置合わせ点と線を、また実装基板に位
置合わせ点と線と一致する位置決め基準点と位置決め基
準線とを設け、実装の際の位置決めで、それらを一致さ
せるように調整することにより、実装基板の実装面の縦
方向及び横方法に関し高い位置決め精度を得ることがで
きる。また、請求項２に記載の発明の構成によれば、光
受発光素子の電極層と実装基板の電極パッドとの接着に
より光受発光素子と実装基板とを電気的に接続かつ高さ
方向に高い精度で機械的に接合することができる。本発
明に係る光受発光素子モジュールを使用すれば、低い結
合損失でバット・ジョイント方式の光接続を行うことが
できる。According to the configuration of the invention described in claim 1,
The light receiving / emitting element is provided with alignment points and lines, and the mounting substrate is provided with positioning reference points and positioning reference lines that match the alignment points and lines, and they are adjusted so that they match during positioning during mounting. As a result, high positioning accuracy can be obtained in the vertical and horizontal directions of the mounting surface of the mounting board. According to the configuration of the invention described in claim 2, the light receiving / emitting element and the mounting board are electrically connected to each other in the height direction by bonding the electrode layer of the light receiving / emitting element and the electrode pad of the mounting board. It can be joined mechanically with high accuracy. By using the light emitting and receiving element module according to the present invention, it is possible to perform butt joint type optical connection with low coupling loss.
【００３４】また、本発明に係る光受発光素子モジュー
ルの製作方法によれば、従来方法よりは遙かに高い位置
決め精度で実装できるので、サブミクロンオーダの超高
精度で光受発光素子を実装した光受発光素子モジュール
を実現することができる。しかも、光受発光素子又は実
装基板にコストの高い半田バンプを形成する必要もない
ので、経済的に実装することができる。Further, according to the method of manufacturing the light receiving and emitting element module of the present invention, the light receiving and emitting element can be mounted with extremely high positioning accuracy as compared with the conventional method. The light receiving and emitting device module can be realized. Moreover, since it is not necessary to form costly solder bumps on the light receiving / emitting element or the mounting substrate, the mounting can be economically performed.
【図１】本発明に係る光受発光素子モジュールの実施例
の概略構造を示すために光受発光素子としての実装され
るレーザチップと実装基板とを分離して示した斜視図で
ある。FIG. 1 is a perspective view in which a laser chip mounted as a light receiving and emitting element and a mounting substrate are shown separately to show a schematic structure of an embodiment of a light receiving and emitting element module according to the present invention.
【図２】レーザチップの概略構成を示す斜視図である。FIG. 2 is a perspective view showing a schematic configuration of a laser chip.
【図３】光受発光素子と実装基板との位置決めを説明す
る模式的側面図である。FIG. 3 is a schematic side view for explaining positioning of the light receiving / emitting element and the mounting substrate.
【図４】光受発光素子と実装基板との位置決めを説明す
る模式的斜視図である。FIG. 4 is a schematic perspective view illustrating positioning of a light receiving / emitting element and a mounting substrate.
【図５】光受発光素子モジュールの平面図である。FIG. 5 is a plan view of a light receiving and emitting element module.
【符号の説明】 １０ 本発明に係る光受発光素子モジュールの実施例 １２ レーザチップ １４ 実装面 １６ 実装基板 １８ ｎ+型半導体基板 ２０ ＭＱＷ活性層 ２２ ｎ型クラッド層 ２４ リッジ部 ２６ 第１電極部 ２８ 第２電極部 ３０ 第１溝 ３２ 第２溝 ３３ ｐ型クラッド層 ３４ ｎ型ブロッキング層 ３６ 上部ｐ型クラッド層 ３８ ｐ型電極層 ４０、４２、４４ 前端面 ４６ 電極層 ４８ 半田層 ５０ 第１位置合わせエッジ ５２ 第２位置合わせエッジ ５４ 第１位置合わせ点 ５６ 第２位置合わせ点 ５８ ｎ側電極層 ６０ 端面 ６２ 長溝 ６４ 第１電極パッド ６６ 第２電極パッド ６８ 第１溝エッジ ７０ 第２溝エッジ ７２ 第１基準点 ７４ 第２基準点 ７６ ボンデイングパッド ７８ 電極配線パターン ８０ リード足用パッド[Description of Reference Signs] 10 Example of light receiving and emitting element module according to the present invention 12 Laser chip 14 Mounting surface 16 Mounting substrate 18 n + type semiconductor substrate 20 MQW active layer 22 n type cladding layer 24 Ridge portion 26 First electrode portion 28 2nd electrode part 30 1st groove 32 2nd groove 33 p-type clad layer 34 n-type blocking layer 36 upper p-type clad layer 38 p-type electrode layer 40, 42, 44 front end surface 46 electrode layer 48 solder layer 50 1st Alignment edge 52 Second alignment edge 54 First alignment point 56 Second alignment point 58 n-side electrode layer 60 End face 62 Long groove 64 First electrode pad 66 Second electrode pad 68 First groove edge 70 Second groove edge 72 First Reference Point 74 Second Reference Point 76 Bonding Pad 78 Electrode Wiring Pattern 80 Lead Foot Pad
フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｓ 3/18 (72)発明者 岩瀬 正幸 東京都千代田区丸の内２丁目６番１号 古 河電気工業株式会社内Continuation of front page (51) Int.Cl. 6 Identification number Internal reference number FI Technical indication location H01S 3/18 (72) Inventor Masayuki Iwase 2-6-1, Marunouchi, Chiyoda-ku, Tokyo Furukawa Electric Co., Ltd. Within
Claims (6)
くとも１個の光受発光素子と実装基板とを有し、素子基
板を外方にストライプ部を内方に向けて光受発光素子を
実装基板上に実装した光受発光素子モジュールであっ
て、 光受発光素子は、ストライプ部の両側に延びる第１及び
第２溝と、第１及び第２溝のストライプ部と反対側に延
在する第１及び第２領域部の上面と第１及び第２溝の溝
壁とによりそれぞれ形成された直線状の第１及び第２位
置合わせエッジと、ストライプ部に交差する方向に延在
する第１及び第２領域部の端面と第１及び第２位置合わ
せエッジとの交点によりそれぞれ定まる第１及び第２位
置合わせ点とを備え、 実装基板は、実装面と、各光受発光素子毎に実装面に光
受発光素子のストライプ部より長く形成された長溝とを
備え、 長溝の両側に延在する第１及び第２基板領域部の上面と
長溝の溝壁とによりそれぞれ形成された第１及び第２溝
エッジは、それぞれ第１及び第２位置合わせエッジに一
致して延びる共に第１及び第２位置合わせ点に一致する
第１及び第２基準点を備え、 光受発光素子の各々が、第１位置合わせエッジ及び第１
位置合わせ点をそれぞれ第１溝エッジ及び第１基準点に
一致させ、第２位置合わせエッジ及び第２位置合わせ点
をそれぞれ第２溝エッジ及び第２基準点に一致させて位
置決めされていることを特徴とする光受発光素子モジュ
ール。1. A mounting substrate having at least one light receiving / emitting element having a stripe portion including an active layer and a mounting substrate, wherein the light receiving / emitting element is mounted with the element substrate facing outward and the stripe portion facing inward. In the light receiving and emitting element module mounted on the above, the light receiving and emitting element includes first and second grooves extending on both sides of the stripe portion and first and second grooves extending on opposite sides of the stripe portion of the first and second grooves. First and second linear alignment edges formed by the upper surfaces of the first and second region portions and the groove walls of the first and second grooves, respectively, and first and second extending in a direction intersecting the stripe portion. The mounting board includes a mounting surface and a mounting surface for each light receiving / emitting element. The mounting board includes a mounting surface and a mounting surface for each light receiving / emitting element. Longer than the stripe part of the light emitting and receiving element And the first and second groove edges formed by the upper surfaces of the first and second substrate region portions extending on both sides of the long groove and the groove walls of the long groove, respectively, are first and second alignment edges, respectively. Each of the light receiving and emitting elements includes a first alignment edge and a first alignment edge and a first reference point that extends in alignment with the first alignment point and a second reference point that match the first alignment point.
Positioning is performed by aligning the alignment points with the first groove edge and the first reference point, respectively, and aligning the second alignment edge and the second alignment point with the second groove edge and the second reference point, respectively. A characteristic light receiving and emitting element module.
その上面に平坦な表面電極を有する第１及び第２電極部
を構成し、 実装基板の第１及び第２基板領域部が、それぞれ、その
上面に第１及び第２基準点から第１及び第２溝エッジに
沿って平坦に延在し、かつ表面電極を有する第１及び第
２電極パッドを備え、 光受発光素子と実装基板とは、第１電極部と第１電極パ
ッドとの接着及び第２電極部と第２電極パッドとの接着
の少なくとも一方の接着により電気的に接続され、かつ
双方の接着により機械的に接合されていることを特徴と
する請求項１に記載の光受発光素子モジュール。2. The first and second region parts of the light receiving and emitting element,
The first and second electrode portions having a flat surface electrode on the upper surface thereof are configured, and the first and second substrate area portions of the mounting substrate are respectively on the upper surface from the first and second reference points to the first and second reference points. The first light receiving and emitting device and the mounting substrate are provided with first and second electrode pads that extend flat along the two groove edges and have surface electrodes, and the first electrode portion and the first electrode pad are bonded and The light receiving and emitting according to claim 1, wherein the second electrode portion and the second electrode pad are electrically connected by at least one of the adhesives and mechanically joined by the adhesives of both. Element module.
端面を備え、かつ第１及び第２基準点は、開口端面と第
１及び第２溝エッジとの交点で定まり、 光受発光素子の光出射端面又は光入射端面を構成するス
トライプ部の端面が、実装基板の開口端面と同じ平面内
にあることを特徴とする請求項１又は２に記載の光受発
光素子モジュール。3. The mounting substrate has an opening end face in which one end of the long groove is opened, and the first and second reference points are determined at the intersections of the opening end face and the first and second groove edges. 3. The light receiving and emitting element module according to claim 1, wherein the end surface of the stripe portion that constitutes the light emitting end surface or the light incident end surface of is in the same plane as the opening end surface of the mounting substrate.
部品との無調芯光接続を行う位置決め基準を備えている
ことを特徴とする請求項１から３のうちのいずれか１項
に記載の光受発光素子モジュール。4. The mounting substrate is provided with a positioning reference for making an unaligned optical connection with an optical passive component other than the light receiving and emitting element, and the mounting substrate is provided with a positioning reference. The light receiving and emitting element module according to.
発光素子を実装基板上に素子基板を外方にストライプ部
を内方に向けて実装する方法であって、 ストライプ部の両側に延びる第１及び第２溝と、第１及
び第２溝のストライプ部と反対側に延在する第１及び第
２領域部の上面と第１及び第２溝の溝壁とによりそれぞ
れ形成される第１及び第２位置合わせエッジと、光受発
光素子のストライプ部に交差する方向に延在する第１及
び第２領域部の端面と第１及び第２位置合わせエッジと
の交点によりそれぞれ定まる第１及び第２位置合わせ点
とを光受発光素子に設け、 光受発光素子のストライプ部より長く延びる長溝を各光
受発光素子毎に実装基板の上面に形成し、 長溝の形成に当たっては、長溝の両側に延在する第１及
び第２基板領域部の上面と長溝の溝壁とによりそれぞれ
形成される第１及び第２溝エッジを、実装した際に、そ
れぞれ第１及び第２位置合わせエッジに一致するように
形成し、かつ実装した際に第１及び第２位置合わせ点に
一致する第１及び第２基準点を第１及び第２溝エッジに
設け、 第１位置合わせエッジ及び第１位置合わせ点をそれぞれ
第１溝エッジ及び第１基準点に一致させ、第２位置合わ
せエッジ及び第２位置合わせ点をそれぞれ第２溝エッジ
及び第２基準点に一致させるように光受発光素子の各々
を実装基板上に位置決めすることを特徴とする光受発光
素子モジュールの製作方法。5. A method for mounting a light receiving / emitting element having a stripe portion including an active layer on a mounting substrate, with the element substrate facing outward and the stripe portion facing inward. A first groove formed by the first and second grooves, the upper surfaces of the first and second region portions extending on the opposite side of the stripe portions of the first and second grooves, and the groove walls of the first and second grooves, respectively. And the second alignment edge, and the first and second alignment edges respectively defined by the intersections of the end faces of the first and second region portions extending in the direction intersecting the stripe portion of the light receiving and emitting element and the first and second alignment edges. A second alignment point is provided in the light receiving / emitting element, and long grooves extending longer than the stripe portion of the light receiving / emitting element are formed on the upper surface of the mounting substrate for each light receiving / emitting element. When forming the long groove, both sides of the long groove are formed. Of the first and second substrate region portions extending to First and second groove edges respectively formed by the upper surface and the groove wall of the long groove are formed so as to correspond to the first and second alignment edges when mounted, and the first when formed. And first and second reference points corresponding to the second and third alignment points are provided on the first and second groove edges, and the first alignment edge and the first alignment point are respectively defined as the first groove edge and the first reference point. Each of the light receiving and emitting elements is positioned on the mounting substrate so that the second alignment edge and the second alignment point are aligned with the second groove edge and the second reference point, respectively. Manufacturing method of light emitting device module.
面に平坦な表面電極を有する第１及び第２電極部をそれ
ぞれ形成し、 実装基板の第１及び第２基板領域部の上面に第１及び第
２基準点からそれぞれ第１及び第２エッジに沿って平坦
に延在する第１及び第２電極パッドを形成し、 第１電極部と第１電極パッドとを、及び第２電極部と第
２電極パッドとを半田で電気的に接合することを特徴と
する請求項５に記載の光受発光素子モジュールの製作方
法。6. The first and second electrode portions having flat surface electrodes are formed on the upper surfaces of the first and second area portions of the light receiving and emitting element, respectively, and the first and second substrate area portions of the mounting substrate are formed. First and second electrode pads extending flat from the first and second reference points along the first and second edges, respectively, are formed on the upper surface, and the first electrode portion and the first electrode pad are formed. The method of manufacturing a light receiving and emitting element module according to claim 5, wherein the two electrode portions and the second electrode pads are electrically joined with solder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21967595A JP2994235B2 (en) | 1995-08-04 | 1995-08-04 | Light receiving / emitting element module and method of manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21967595A JP2994235B2 (en) | 1995-08-04 | 1995-08-04 | Light receiving / emitting element module and method of manufacturing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH0951108A true JPH0951108A (en) | 1997-02-18 |
| JP2994235B2 JP2994235B2 (en) | 1999-12-27 |
Family
ID=16739221
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21967595A Expired - Lifetime JP2994235B2 (en) | 1995-08-04 | 1995-08-04 | Light receiving / emitting element module and method of manufacturing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2994235B2 (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999044086A1 (en) * | 1998-02-27 | 1999-09-02 | The Whitaker Corporation | On-chip alignment fiducials for surface emitting devices |
| JP2003101144A (en) * | 2001-09-27 | 2003-04-04 | Nec Compound Semiconductor Devices Ltd | Semiconductor laser device |
| JP2005150386A (en) * | 2003-11-14 | 2005-06-09 | Stanley Electric Co Ltd | Semiconductor device and its manufacturing method |
| US6967980B2 (en) | 2001-04-11 | 2005-11-22 | Nec Corporation | Optical semiconductor module |
| JP2006156603A (en) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | Package for housing light emitting element, light emitting device, and illuminating device |
| JP2008244309A (en) * | 2007-03-28 | 2008-10-09 | Fujitsu Ltd | Semiconductor light-emitting element and manufacturing method therefor |
| JP2008311292A (en) * | 2007-06-12 | 2008-12-25 | Sharp Corp | Semiconductor laser device and method of manufacturing the same |
| WO2009028627A1 (en) * | 2007-08-28 | 2009-03-05 | Panasonic Electric Works Co., Ltd. | Led chip mounting method |
| JP2015170701A (en) * | 2014-03-06 | 2015-09-28 | 技術研究組合光電子融合基盤技術研究所 | optical integrated circuit device |
-
1995
- 1995-08-04 JP JP21967595A patent/JP2994235B2/en not_active Expired - Lifetime
Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1999044086A1 (en) * | 1998-02-27 | 1999-09-02 | The Whitaker Corporation | On-chip alignment fiducials for surface emitting devices |
| US6967980B2 (en) | 2001-04-11 | 2005-11-22 | Nec Corporation | Optical semiconductor module |
| JP2003101144A (en) * | 2001-09-27 | 2003-04-04 | Nec Compound Semiconductor Devices Ltd | Semiconductor laser device |
| JP4580633B2 (en) * | 2003-11-14 | 2010-11-17 | スタンレー電気株式会社 | Semiconductor device and manufacturing method thereof |
| JP2005150386A (en) * | 2003-11-14 | 2005-06-09 | Stanley Electric Co Ltd | Semiconductor device and its manufacturing method |
| JP2006156603A (en) * | 2004-11-26 | 2006-06-15 | Kyocera Corp | Package for housing light emitting element, light emitting device, and illuminating device |
| JP4601404B2 (en) * | 2004-11-26 | 2010-12-22 | 京セラ株式会社 | Light emitting device and lighting device |
| JP2008244309A (en) * | 2007-03-28 | 2008-10-09 | Fujitsu Ltd | Semiconductor light-emitting element and manufacturing method therefor |
| JP2008311292A (en) * | 2007-06-12 | 2008-12-25 | Sharp Corp | Semiconductor laser device and method of manufacturing the same |
| EP2197046A1 (en) * | 2007-08-28 | 2010-06-16 | Panasonic Electric Works Co., Ltd. | Led chip mounting method |
| JP2009054892A (en) * | 2007-08-28 | 2009-03-12 | Panasonic Electric Works Co Ltd | Packaging method of led chip |
| WO2009028627A1 (en) * | 2007-08-28 | 2009-03-05 | Panasonic Electric Works Co., Ltd. | Led chip mounting method |
| EP2197046A4 (en) * | 2007-08-28 | 2013-03-06 | Panasonic Corp | Led chip mounting method |
| US8802460B2 (en) | 2007-08-28 | 2014-08-12 | Panasonic Corporation | Method of mounting LED chip |
| JP2015170701A (en) * | 2014-03-06 | 2015-09-28 | 技術研究組合光電子融合基盤技術研究所 | optical integrated circuit device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2994235B2 (en) | 1999-12-27 |
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