JPH0936080A - Method for washing machined silicon ingot - Google Patents
Method for washing machined silicon ingotInfo
- Publication number
- JPH0936080A JPH0936080A JP7201745A JP20174595A JPH0936080A JP H0936080 A JPH0936080 A JP H0936080A JP 7201745 A JP7201745 A JP 7201745A JP 20174595 A JP20174595 A JP 20174595A JP H0936080 A JPH0936080 A JP H0936080A
- Authority
- JP
- Japan
- Prior art keywords
- silicon ingot
- cleaning
- cutting
- washing
- hot water
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67051—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/0058—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material
- B28D5/0076—Accessories specially adapted for use with machines for fine working of gems, jewels, crystals, e.g. of semiconductor material for removing dust, e.g. by spraying liquids; for lubricating, cooling or cleaning tool or work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Processing Of Stones Or Stones Resemblance Materials (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、加工済シリコンインゴ
ットの洗浄方法、更に詳しくは、複数のウエハを形成す
る為の切断工程を終えたシリコンインゴットの洗浄方法
に関するものである。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for cleaning a processed silicon ingot, and more particularly to a method for cleaning a silicon ingot which has been subjected to a cutting process for forming a plurality of wafers.
【0002】[0002]
【従来の技術】周知の如く、ウエハは、一定長の円形棒
状体であるシリコンインゴットを、例えば、880μm
といった一定の厚さに切断して形成されるが、その際、
シリコンインゴットは、切断用取付治具及びカーボンブ
ロックを介して保持された姿(図1参照)で切断加工部
にセットされて一般にワイヤーソーで切断され、そし
て、この切断工程を終えた加工済シリコンインゴット
は、そのままの姿で後工程の薬液洗浄工程へ送られて洗
浄されている。2. Description of the Related Art As is well known, a wafer is, for example, a silicon ingot which is a circular rod-shaped body having a certain length and is, for example, 880 μm.
It is formed by cutting it to a certain thickness such as
The silicon ingot is set in the cutting processing part in a state in which it is held through the cutting attachment jig and the carbon block (see FIG. 1), and is generally cut with a wire saw, and the processed silicon that has finished this cutting step is processed. The ingot is sent as it is to the chemical solution cleaning step of the subsequent step for cleaning.
【0003】[0003]
【発明が解決しようとする課題】ところが、かかる切断
工程において使用される切断研磨粉やオイル等が、例え
ば、250μmといった狭小の切断スリットに付着し、
それが薬液洗浄工程へ運ばれて、ここの負荷を高めて高
価な洗浄液を短期間(又は短時間)で劣化させる為、洗
浄液の使用量が多くなってコストダウン化が妨げられて
いたと共に液管理が煩しかった。However, the cutting abrasive powder, oil, etc. used in the cutting process adheres to a narrow cutting slit of 250 μm, for example.
This is transferred to the chemical cleaning process, which increases the load here and deteriorates the expensive cleaning liquid in a short period (or a short time), so the amount of cleaning liquid used increases and the cost reduction is hindered. Management was troublesome.
【0004】本発明は、このような欠点に鑑み、それを
解決すべく鋭意検討の結果、ウエハを形成する為の切断
工程を終えたシリコンインゴットを直接、薬液洗浄工程
へ送って洗浄しないで、温水吹き付け洗浄を行った上で
薬液洗浄工程へ送って洗浄するようにすることにより、
高価な洗浄液の短期間劣化を防止し得てコストダウン化
を図ることができると共に液管理の容易化も図ることが
できることを見い出したものである。In view of these drawbacks, the present invention has conducted extensive studies to solve them, and as a result, the silicon ingot, which has undergone the cutting process for forming a wafer, is not directly sent to the chemical cleaning process for cleaning. By spraying with warm water and then sending it to the chemical cleaning step for cleaning,
It has been found that deterioration of an expensive cleaning liquid can be prevented for a short period of time, cost can be reduced, and liquid management can be facilitated.
【0005】[0005]
【課題を解決するための手段】すなわち、本発明に係る
加工済シリコンインゴットの洗浄方法は、複数のウエハ
を形成する為の切断工程を終えたシリコンインゴット
を、切断用取付治具に保持したままの姿で温水吹き付け
洗浄した後、薬液洗浄を行うことを特徴とするものであ
る。なお、切断工程においては、ワイヤーソーを用いる
のが好ましい。That is, in the method for cleaning a processed silicon ingot according to the present invention, the silicon ingot, which has undergone the cutting process for forming a plurality of wafers, is held on the cutting attachment jig. It is characterized in that the chemical solution is washed after being sprayed with hot water in the form of. A wire saw is preferably used in the cutting step.
【0006】[0006]
【実施例】図1において、ウエハを形成する為の切断工
程を終えたシリコンインゴット、すなわち、一定長の円
形棒状体であるシリコンインゴットを、ワイヤーソーを
用いて一定の厚さ(例えば、880μm)に切断して複
数のウエハ1を形成した加工済シリコンインゴット2が
示されているが、このインゴット2は、切断用取付治具
3に接着されているカーボンブロック4に接着されて保
持されている。EXAMPLE In FIG. 1, a silicon ingot which has been subjected to a cutting process for forming a wafer, that is, a silicon ingot which is a circular rod-shaped body having a certain length is fixed with a wire saw to a certain thickness (for example, 880 μm). A processed silicon ingot 2 which is cut into a plurality of wafers 1 is shown. The ingot 2 is adhered and held to a carbon block 4 adhered to a cutting attachment jig 3. .
【0007】なお、切断用取付治具3は、切断加工しよ
うとするシリコンインゴットを、その加工部にセットす
る為のものであると共にカーボンブロック4は、ワイヤ
ーソーでシリコンインゴットを切断するに際に切断用取
付治具3の損傷を防止する為のものである。The cutting attachment jig 3 is used to set the silicon ingot to be cut at the processing portion, and the carbon block 4 is used for cutting the silicon ingot with a wire saw. This is for preventing the cutting attachment jig 3 from being damaged.
【0008】また、加工済シリコンインゴット2及びカ
ーボンブロック4に、狭小(例えば、250μm)の切
断スリット5が形成されているが、ここに、切断に際し
て使用された切断研磨粉やオイル等(以下、スラリーと
いう。)が付着されている。なお、このスラリーは、高
粘度性のものであって、これが狭小の切断スリット5の
奥深くまで付着している。A narrow (for example, 250 μm) cutting slit 5 is formed in the processed silicon ingot 2 and the carbon block 4. Here, cutting abrasive powder, oil, etc. used for cutting (hereinafter, Slurry) is attached. The slurry is highly viscous and adheres deep inside the narrow cutting slit 5.
【0009】その為、この付着スラリーが、後工程の薬
液洗浄工程に運ばれると、洗浄液が劣化され易い。そこ
で、本発明においては、これを前洗浄、すなわち、温水
吹き付け洗浄を行って薬液洗浄工程に送るようにしてい
る。Therefore, if this adhered slurry is carried to a chemical solution cleaning step as a subsequent step, the cleaning solution is easily deteriorated. Therefore, in the present invention, this is pre-washed, that is, washed with hot water and sent to the chemical cleaning step.
【0010】図2,3において、かかる温水吹き付け洗
浄態様が示されているが、図2は正面図、図3は図2の
左側面図である。両図において、ウエハ1を形成する為
の切断断工程を終えた加工済シリコンインゴット2は、
そのままの姿で温水吹き付け洗浄装置の所に、作業員に
より運ばれて来る。そして、作業員が、加工済シリコン
インゴット2を、温水吹き付け洗浄装置に備えられてい
る移送テーブル7上に載置し、このテーブル7を押して
温水吹き付け洗浄部Aに移動させる。2 and 3 show such a hot water spray cleaning mode, FIG. 2 is a front view and FIG. 3 is a left side view of FIG. In both figures, the processed silicon ingot 2 that has undergone the cutting step for forming the wafer 1 is
Workers carry it to the hot water spray cleaning device as it is. Then, the worker places the processed silicon ingot 2 on the transfer table 7 provided in the hot water spray cleaning device, and pushes the table 7 to move it to the hot water spray cleaning unit A.
【0011】次いで、加工済シリコンインゴット2を持
ち上げて、上方の左右のクランプ8に係止させる。な
お、加工済シリコンインゴット2は、切断用取付治具3
を介してクランプ8に係止されるが、クランプ8は、エ
アーシリンダー9により揺動し得るように装置フレーム
10に装着されている。Then, the processed silicon ingot 2 is lifted up and locked to the upper left and right clamps 8. The processed silicon ingot 2 is attached to the cutting attachment jig 3
The clamp 8 is attached to the apparatus frame 10 so that the clamp 8 can be swung by the air cylinder 9.
【0012】その為、図4において示されているよう
に、両クランプ8を水平に位置せしめた状態において、
それに加工済シリコンインゴット2を係止させ、次い
で、図5において示されているように、両クランプ8を
上方に突出させた状態に揺動せしめることにより、加工
済シリコンインゴット2を、その下端が移送テーブル7
の上方に位置されるようにセットすることができる。Therefore, as shown in FIG. 4, when both clamps 8 are horizontally positioned,
The processed silicon ingot 2 is locked to it, and then, as shown in FIG. 5, both clamps 8 are swung so that the clamps 8 project upward, so that the processed silicon ingot 2 has its lower end Transfer table 7
Can be set to be located above.
【0013】以下、このようにして、加工済シリコンイ
ンゴット2を温水吹き付け洗浄部Aにセットし得ると、
移送テーブル7をここから元の位置にリターンさせた
後、続いて、切換弁11を所定に制御して、ノズル12
群から温水を加工済シリコンインゴット2に吹き付け
る。In the following, if the processed silicon ingot 2 can be set in the washing section A by spraying hot water,
After the transfer table 7 is returned to the original position from here, the switching valve 11 is controlled to a predetermined value, and the nozzle 12
Hot water is sprayed onto the processed silicon ingot 2 from the group.
【0014】その際、温水は、高圧ポンプ13を介して
温水タンク14から供給されるが、このタンク14は、
ヒーター、液温計、液面計等を備え、60℃前後の温水
の一定量を貯えている。また、ノズル12群が装着され
ているアーム15が、図2において右側へ移動され、二
点鎖線で示されている位置15aまで移動されると、左
側へ移動され、このように洗浄中、左右に所定回数往復
動される。この移動制御は、移動装置16により行われ
る。At this time, hot water is supplied from a hot water tank 14 via a high-pressure pump 13, and this tank 14 is
It is equipped with a heater, liquid thermometer, liquid level gauge, etc., and stores a certain amount of hot water at around 60 ° C. Further, when the arm 15 to which the group of nozzles 12 is attached is moved to the right side in FIG. 2 and moved to the position 15a shown by the chain double-dashed line, it is moved to the left side. It is reciprocated a predetermined number of times. This movement control is performed by the movement device 16.
【0015】移動装置16は、図6において拡大されて
示されているように、装置フレーム10に装着されてい
る一対のレール20に係合されたスライドベース21を
備え、このベース21をモータ22で移動制御すること
により、それに懸装されているアーム15を所定位置に
移動させることができる。The moving device 16 includes a slide base 21 engaged with a pair of rails 20 mounted on the device frame 10, as shown in an enlarged view in FIG. By controlling the movement with, the arm 15 suspended therein can be moved to a predetermined position.
【0016】なお、スライドベース21は、モータ22
が装着されている方の駆動側の鎖車23aと、それと反
対側の従動側の鎖車23bとに掛け渡されているエンド
レスチェーン24に係合されており、従って、モータ2
2の正逆回転制御により、図2において左右方向に往復
動され、かつ、その際、モータ22の正逆回転制御がセ
ンサー25a,25b等により所定の制御信号を得て行
われる。また、インゴットの長さに対応した洗浄ストロ
ークを選定することにより、使用水量の節約を図ること
ができる。The slide base 21 is a motor 22.
Is engaged with the endless chain 24 that is stretched over the drive-side chain wheel 23a on which is mounted and the driven-side chain wheel 23b on the opposite side thereof.
2 is reciprocated in the left-right direction by the forward / reverse rotation control, and at that time, the forward / reverse rotation control of the motor 22 is performed by obtaining a predetermined control signal from the sensors 25a and 25b. In addition, by selecting the cleaning stroke corresponding to the length of the ingot, it is possible to save the amount of water used.
【0017】一方、このようにして往復動されるアーム
15に装着されているノズル12群から温水が噴射され
る。この態様が図7,8において示されている。両図に
おいて、7個のノズル12a〜12gが示されている
が、最初に上方のノズル12a,12bから噴射され、
次いで、アーム15の所定回数の左右往復動の後、その
下方の12cから噴射される。On the other hand, hot water is jetted from the group of nozzles 12 mounted on the arm 15 which is reciprocated in this way. This aspect is shown in FIGS. In both figures, seven nozzles 12a to 12g are shown, but first, the upper nozzles 12a and 12b are sprayed,
Then, after the arm 15 reciprocates left and right a predetermined number of times, it is jetted from 12c below it.
【0018】以下、同様に、続いて、ノズル12d,1
2eから噴射された後、最後に、ノズル12f,12g
から噴射される。このような噴射により、上方の付着ス
ラリーから順次、除去して、それを流下させることがで
きるので、効果的に洗浄することができる。Similarly, subsequently, the nozzles 12d, 1
After being ejected from 2e, finally, the nozzles 12f, 12g
Injected from. By such injection, it is possible to sequentially remove the attached slurry from the upper side and allow it to flow down, so that the cleaning can be effectively performed.
【0019】なお、切換弁11を経て送られて来る温水
は加圧されているが、この高加圧温水は、耐圧ホース3
0a,30b,30cから各ノズル12a〜gに送られ
る。また、各ノズル12a〜gが装着されている管路2
6a,26b,27a,27b及び28は、取付具3
1,32a,32b,33,34を介してアーム15に
装着されている。The hot water sent through the switching valve 11 is pressurized.
0a, 30b, 30c are sent to each nozzle 12a-g. In addition, the pipeline 2 in which the nozzles 12a to 12g are mounted
6a, 26b, 27a, 27b and 28 are fixtures 3
It is attached to the arm 15 via 1, 32a, 32b, 33, 34.
【0020】また、加工済シリコンインゴット2から流
下する汚水は、トレー35(図3参照)を介して廃水タ
ンク36に貯えられるが、上述の前洗浄を終えると、空
荷の移送テーブル7を温水吹き付け洗浄部Aに移動さ
せ、かつ、両クランプ8を水平に位置せしめた状態にお
いて加工済シリコンインゴット2を取り外して移送テー
ブル7上に載置し、それを、ここから元の位置へリター
ンさせる。これは作業員により行われる。Further, the sewage flowing down from the processed silicon ingot 2 is stored in the waste water tank 36 via the tray 35 (see FIG. 3). When the above-mentioned pre-cleaning is completed, the empty transfer table 7 is warmed. The machined silicon ingot 2 is removed and placed on the transfer table 7 with the clamps 8 moved horizontally to the spray cleaning section A, and both clamps 8 are positioned horizontally, and it is returned from here to the original position. This is done by the worker.
【0021】次いで、前洗浄された加工済シリコンイン
ゴット2は、切断用取付治具3に保持されたままの姿で
後工程の薬液洗浄工程に送られて洗浄される。その際、
かかる前洗浄により、切断工程で付着したスラリーが十
分に除去されているので、薬液洗浄工程の負荷を小さく
することができ、従って、界面活性剤や特殊なオイル等
を含有の高価な洗浄液が短期間(又は短時間)で劣化さ
れてしまうのを防止し得てコストダウン化を図ることが
できると共に液管理の容易化も図ることができる。Next, the pre-cleaned processed silicon ingot 2 is sent to the subsequent chemical liquid cleaning step for cleaning while being held by the cutting attachment jig 3. that time,
By such pre-cleaning, the slurry adhering to the cutting process is sufficiently removed, so that the load of the chemical cleaning process can be reduced, and therefore the expensive cleaning liquid containing a surfactant, special oil, etc. can be used for a short period of time. It is possible to prevent deterioration in a short time (or a short time), and it is possible to reduce cost and facilitate liquid management.
【0022】なお、前提となる切断工程としては、油分
汚れが激しく、かつ、狭い切断間隙が形成されるワイヤ
ーソーを用いる場合等が挙げられ、このような切断工程
を終えた加工済シリコンインゴット2を前洗浄、すなわ
ち、温水吹き付け洗浄するこの効果が顕著である。The cutting process as a premise is, for example, the case of using a wire saw which is heavily contaminated with oil and forms a narrow cutting gap. The processed silicon ingot 2 which has undergone such cutting process is used. This effect of pre-washing, that is, washing with hot water is remarkable.
【0023】また、温水吹き付け洗浄に用いられるノズ
ル12a〜12gは、狭小の切断スリット5内に温水を
噴射せしめる関係上、コーン型のものよりも、扇型のも
のの方が好ましく、噴射角度は一般的には90°にすれ
ばよいが、これに限定されず、ノズルの装着個数等を考
慮して60°〜120°の範囲から適宜に選択される。
また、温水吹き付け面との距離については可能な限り接
近させるのが好ましく、この距離が長いと、噴射流が広
がると共に水勢が劣化して十分な洗浄効果を得るのが困
難になる。The nozzles 12a to 12g used for hot water spray cleaning are preferably fan-shaped rather than cone-shaped because the hot water is sprayed into the narrow cutting slit 5, and the spray angle is generally Specifically, it may be set to 90 °, but the present invention is not limited to this, and is appropriately selected from the range of 60 ° to 120 ° in consideration of the number of nozzles mounted and the like.
Further, it is preferable that the distance from the hot water spray surface is as close as possible. If this distance is long, the jet flow spreads and the water force deteriorates, making it difficult to obtain a sufficient cleaning effect.
【0024】また、ノズル12a〜12gの装着角度
は、スラリーの流れを考慮して下向きに30°〜60°
の範囲において所定角度に調整し得るように装着するの
が好ましく、更に、加工済シリコンインゴット2等に対
して吹き付ける加圧温水は、10〜30kg/cm2 、
40〜60℃前後に制御するのが好ましく、その吹き付
け量は、ノズル1個当り5〜10L/minが好まし
い。The mounting angle of the nozzles 12a to 12g is 30 ° to 60 ° downward considering the flow of the slurry.
It is preferable to mount it so that it can be adjusted to a predetermined angle within the range of 10 to 30 kg / cm 2 , and the pressurized hot water sprayed onto the processed silicon ingot 2 or the like is
It is preferable to control the temperature to about 40 to 60 ° C., and the spraying amount is preferably 5 to 10 L / min per nozzle.
【0025】また、薬液洗浄工程を終えた加工済シリコ
ンインゴット2は、カーボンブロック4から離別される
が、これは、60℃の3〜5%酢酸水溶液に浸漬して接
着剤を溶解することにより行われる。また、その後、別
工程において、切断用取付治具3からカーボンブロック
4から離別され、このブロック4は廃棄処分されると共
に切断用取付治具3は再使用される。The processed silicon ingot 2 which has been subjected to the chemical cleaning step is separated from the carbon block 4, which is immersed in a 3 to 5% acetic acid aqueous solution at 60 ° C. to dissolve the adhesive. Done. After that, in a separate process, the cutting attachment jig 3 is separated from the carbon block 4, and the block 4 is discarded and the cutting attachment jig 3 is reused.
【0026】[0026]
【発明の効果】上述の如く、請求項1,2に記載の発明
によると、ウエハを形成する為の切断工程においてシリ
コンインゴットに付着するスラリーを有効に除去し得
て、それが後工程の薬液洗浄工程に運ばれるのを防止す
ることができ、従って、薬液洗浄工程の負荷を小さくす
ることができて、界面活性剤や特殊なオイル等を含有の
高価な洗浄液が短期間(又は短時間)で劣化されてしま
うのを防止し得てコストダウン化を図ることができると
共に液管理の容易化も図ることができる。As described above, according to the first and second aspects of the present invention, the slurry adhering to the silicon ingot can be effectively removed in the cutting step for forming the wafer, which is the chemical solution in the subsequent step. It is possible to prevent it from being carried to the cleaning process, and thus the load of the chemical cleaning process can be reduced, and an expensive cleaning liquid containing a surfactant or special oil can be used for a short period (or short time). It is possible to prevent deterioration due to the above, and it is possible to reduce the cost and also to facilitate the liquid management.
【図1】加工済シリコンインゴットの保持態様を示す図
である。FIG. 1 is a diagram showing a manner of holding a processed silicon ingot.
【図2】前洗浄装置の正面図である。FIG. 2 is a front view of a pre-cleaning device.
【図3】図2の左側面図である。FIG. 3 is a left side view of FIG. 2;
【図4】加工済シリコンインゴットの支持態様を示す図
である。FIG. 4 is a view showing a support mode of a processed silicon ingot.
【図5】加工済シリコンインゴットの洗浄中における支
持態様を示す図である。FIG. 5 is a view showing a support mode during cleaning of a processed silicon ingot.
【図6】ノズル群が装着されているアームを往復動させ
る移動装置の正面図である。FIG. 6 is a front view of a moving device that reciprocates an arm on which a nozzle group is mounted.
【図7】アームに対するノズル群の装着態様を示す正面
図であるFIG. 7 is a front view showing how the nozzle group is attached to the arm.
【図8】図7の右側面図である。FIG. 8 is a right side view of FIG. 7;
1 ウエハ 2 加工済シリコンインゴット 3 切断用取付治具 4 カーボンブロック 5 切断スリット 12a〜12g ノズル 13 高圧ポンプ 14 温水タンク DESCRIPTION OF SYMBOLS 1 Wafer 2 Processed silicon ingot 3 Mounting jig for cutting 4 Carbon block 5 Cutting slit 12a-12g Nozzle 13 High pressure pump 14 Hot water tank
───────────────────────────────────────────────────── フロントページの続き (72)発明者 高見 敬一 栃木県宇都宮市駅前通り二丁目2番20号駅 前通りハイツ507号 (72)発明者 河村 良一 静岡県三島市4845番地東レエンジニアリン グ株式会社内 (72)発明者 渡辺 丈洋 静岡県三島市4845番地東レエンジニアリン グ株式会社内 (72)発明者 小迫 雅博 静岡県三島市4845番地東レエンジニアリン グ株式会社内 ─────────────────────────────────────────────────── ─── Continuation of front page (72) Inventor Keiichi Takami 2-20, Ekimae-dori, Utsunomiya-shi, Tochigi No. 507 Heights, Ekimae-dori (72) Inventor Ryoichi Kawamura 4845 Mishima City, Shizuoka Toray Engineering Co., Ltd. Company (72) Inventor Takehiro Watanabe Toray Engineering Co., Ltd., 4845 Mishima City, Shizuoka Prefecture (72) Masahiro Kosako 4845 Toray Engineering Co., Ltd., Mishima City, Shizuoka Prefecture
Claims (2)
終えたシリコンインゴットを、切断用取付治具に保持し
たままの姿で温水吹き付け洗浄した後、薬液洗浄を行う
ことを特徴とする加工済シリコンインゴットの洗浄方
法。1. A process characterized in that a silicon ingot that has undergone a cutting process for forming a plurality of wafers is washed by being sprayed with hot water while being held on a cutting attachment jig, and then cleaned with a chemical solution. Cleaning method for used silicon ingot.
ことを特徴とする請求項1に記載の加工済シリコンイン
ゴットの洗浄方法。2. The method for cleaning a processed silicon ingot according to claim 1, wherein a wire saw is used in the cutting step.
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7201745A JPH0936080A (en) | 1995-07-13 | 1995-07-13 | Method for washing machined silicon ingot |
KR1019970709933A KR19990028611A (en) | 1995-07-13 | 1996-07-12 | Method and apparatus for cleaning silicon ingots with water to remove particulates |
DE19681497T DE19681497T1 (en) | 1995-07-13 | 1996-07-12 | Method and device for washing silicon blocks with water to remove particulate material |
US09/000,061 US6006736A (en) | 1995-07-12 | 1996-07-12 | Method and apparatus for washing silicon ingot with water to remove particulate matter |
GB9800212A GB2318075B (en) | 1995-07-13 | 1996-07-12 | Method and apparatus for washing silicon ingot with water to remove particulate matter |
PCT/US1996/011627 WO1997002905A1 (en) | 1995-07-13 | 1996-07-12 | Method and apparatus for washing silicon ingot with water to remove particulate matter |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP7201745A JPH0936080A (en) | 1995-07-13 | 1995-07-13 | Method for washing machined silicon ingot |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0936080A true JPH0936080A (en) | 1997-02-07 |
Family
ID=16446246
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7201745A Pending JPH0936080A (en) | 1995-07-12 | 1995-07-13 | Method for washing machined silicon ingot |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPH0936080A (en) |
KR (1) | KR19990028611A (en) |
DE (1) | DE19681497T1 (en) |
GB (1) | GB2318075B (en) |
WO (1) | WO1997002905A1 (en) |
Cited By (5)
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JPH06314070A (en) * | 1992-09-24 | 1994-11-08 | Shiina:Kk | Bollard and guide using it |
JP2004510348A (en) * | 2000-09-27 | 2004-04-02 | ラム リサーチ コーポレーション | Fluid delivery ring and method of making and providing the same |
US6776841B2 (en) | 2001-10-30 | 2004-08-17 | Hynix Semiconductor Inc. | Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer |
CN112846920A (en) * | 2021-02-08 | 2021-05-28 | 南京铁道职业技术学院 | Mechanical equipment processing work piece belt cleaning device |
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DE69900914T2 (en) * | 1998-06-08 | 2002-11-28 | Memc Electronic Materials, Inc. | METHOD FOR MONITORING THE CONCENTRATION OF METAL IMPURITIES IN A WAFER CLEANING SOLUTION |
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CN100587937C (en) * | 2005-11-07 | 2010-02-03 | 袁建中 | Silicon slice processing method for solar battery |
DE102008004548A1 (en) | 2008-01-15 | 2009-07-16 | Rec Scan Wafer As | Wafer batch cleaning |
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DE102009035343A1 (en) | 2009-07-23 | 2011-01-27 | Gebr. Schmid Gmbh & Co. | Method and device for cleaning substrates on a support |
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DE3640645A1 (en) * | 1986-11-28 | 1988-06-09 | Wacker Chemitronic | METHOD FOR SAWING CRYSTAL RODS OR BLOCKS BY MEANS OF INTERNAL HOLE SAWS IN THIN WINDOWS |
DE3815018A1 (en) * | 1987-05-06 | 1988-12-01 | Dan Science Co | CARRIER CLEANING AND DRYING DEVICE |
US4949700A (en) * | 1987-12-17 | 1990-08-21 | Tokyou Seimitsu Co., Ltd. | Ingot support device in slicing apparatus |
US4997490A (en) * | 1990-08-02 | 1991-03-05 | Bold Plastics, Inc. | Method of cleaning and rinsing wafers |
US5186192A (en) * | 1990-12-14 | 1993-02-16 | Shin-Etsu Handotai Co., Ltd. | Apparatus for cleaning silicon wafer |
JP2901098B2 (en) * | 1991-04-02 | 1999-06-02 | 東京エレクトロン株式会社 | Cleaning device and cleaning method |
JP2903916B2 (en) * | 1992-11-30 | 1999-06-14 | 信越半導体株式会社 | Semiconductor ingot processing method |
US5427644A (en) * | 1993-01-11 | 1995-06-27 | Tokyo Seimitsu Co., Ltd. | Method of manufacturing semiconductor wafer and system therefor |
JP2853506B2 (en) * | 1993-03-24 | 1999-02-03 | 信越半導体株式会社 | Wafer manufacturing method |
US5950643A (en) * | 1995-09-06 | 1999-09-14 | Miyazaki; Takeshiro | Wafer processing system |
-
1995
- 1995-07-13 JP JP7201745A patent/JPH0936080A/en active Pending
-
1996
- 1996-07-12 KR KR1019970709933A patent/KR19990028611A/en active IP Right Grant
- 1996-07-12 DE DE19681497T patent/DE19681497T1/en not_active Withdrawn
- 1996-07-12 WO PCT/US1996/011627 patent/WO1997002905A1/en active IP Right Grant
- 1996-07-12 GB GB9800212A patent/GB2318075B/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06314070A (en) * | 1992-09-24 | 1994-11-08 | Shiina:Kk | Bollard and guide using it |
JP2004510348A (en) * | 2000-09-27 | 2004-04-02 | ラム リサーチ コーポレーション | Fluid delivery ring and method of making and providing the same |
US6776841B2 (en) | 2001-10-30 | 2004-08-17 | Hynix Semiconductor Inc. | Method for fabricating a semiconductor epitaxial wafer having doped carbon and a semiconductor epitaxial wafer |
CN112846920A (en) * | 2021-02-08 | 2021-05-28 | 南京铁道职业技术学院 | Mechanical equipment processing work piece belt cleaning device |
KR20240068357A (en) * | 2022-11-10 | 2024-05-17 | 에스케이실트론 주식회사 | Spray cleaning device and as sliced cleaning appratus having the same |
Also Published As
Publication number | Publication date |
---|---|
GB2318075B (en) | 1999-03-03 |
GB9800212D0 (en) | 1998-03-04 |
KR19990028611A (en) | 1999-04-15 |
DE19681497T1 (en) | 1998-12-17 |
WO1997002905A1 (en) | 1997-01-30 |
GB2318075A (en) | 1998-04-15 |
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