JPH09211840A - Inspection method and inspection device for reticle as well as inspection method and inspection device for pattern - Google Patents

Abstract

PROBLEM TO BE SOLVED: To make it possible to easily and surely inspect whether a reticule is manufactured in compliance with standards or not. SOLUTION: The resist film on a substrate is exposed while exposure conditions are successively changed by using the reticle for inspection to transfer the patterns of the reticule for inspection and, thereafter, the resist films transferred with the patterns of the reticle for inspection are developed, thereby plural patterns consisting of the resist films are formed. Next, the pattern defects in the plural patterns consisting of the resist film are detected. The positions of the reticle for inspection corresponding to the positions of the pattern defects in the patterns consisting of the resist film where the pattern defects are detected and the number of the detected pattern defects is within the prescribed number, are specified to be the sections where the pattern defects are liable to be defected. Next, the sections where the pattern defects of the reticle for inspection are liable to arise are subjected to the inspection of normal/defective condition.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a reticle inspecting method and an inspecting apparatus used in a semiconductor device manufacturing process, and an inspecting method and an inspecting pattern of a resist film or an underlying film formed in the semiconductor device manufacturing process. Regarding the device.

[0002]

2. Description of the Related Art In recent years, a resist pattern in a semiconductor device manufacturing process is formed by irradiating a resist film formed on a semiconductor substrate with light, an X-ray, an electron beam or the like by using a light shielding plate called a reticle. It is formed by exposing a predetermined region of the resist film and then developing the exposed resist film.

Therefore, since the quality of the reticle directly affects the quality of the resist pattern, it is important to evaluate the quality of the reticle. Further, since the quality of the resist pattern directly affects the quality of the pattern of the electrodes and wirings formed on the conductive layer etched using the resist pattern, it is important to inspect the quality of the resist pattern.

Conventionally, the quality of the reticle is inspected by appropriately selecting a designated area on the reticle, for example, an area having a small line and space, and measuring the dimension of the reticle pattern in the selected area. It was done by judging whether the size of the pattern is within the standard.

In addition, inspection of a pattern defect in a resist pattern is performed by designating a designated area on the resist pattern,
For example, an area with a small line and space is appropriately selected, and the presence or absence of a pattern defect is inspected in the selected area.

[0006]

However, in the conventional reticle inspection method described above, there is a problem in that even if a nonstandard specification occurs in a portion other than a designated area on the reticle, the nonstandard specification cannot be detected. is there. On the other hand, measuring the size of the reticle pattern in all the areas on the reticle is technically possible, but it is very unrealistic because it takes a long time for inspection.

By the way, the pattern exposure on the resist film on the wafer is performed by transferring the pattern of the reticle by enlarging or reducing it at the same size. However, when the design rule is larger than 0.5 μm, the reticle pattern is exposed. Even if the pattern has some dimensional variations, the performance of the semiconductor device is not affected. However, when the minimum dimension of the design rule is 0.5 μm or less, the characteristics of the semiconductor element may be affected. That is, if a non-standard reticle is used, a bridging defect (short circuit defect) may occur between wirings or an open defect (breaking wire defect) may occur between wirings due to variations in exposure conditions and performance of the exposure apparatus. It is difficult to predict in advance dimensional variations of the reticle and dimensional deviations that occur suddenly because they do not always occur in a specific area of the reticle.

Even if the reticle is formed according to the standard, the height of the surface of the resist film on the actual LSI is different. Therefore, the pattern size of the resist film is different from that of the reticle depending on the focus position during exposure. There is also a problem that it does not always match the pattern size.

Further, even if the size of the space between the wirings is the same, the position where a pattern defect such as a bridge defect or an open defect occurs in the resist pattern differs depending on the step of the underlying film and the deviation of the exposure condition, and therefore, in designing. A pattern defect does not always occur in the minimum-sized wiring portion or the minimum space portion. Therefore, in the case of inspecting a pattern defect of a resist pattern formed on a wafer in a semiconductor device manufacturing process, there is a problem in that it is not sufficient to inspect a wiring portion having a minimum design dimension or a portion having a minimum space.

Further, in the process of manufacturing a semiconductor device, when inspecting the presence or absence of a pattern defect in a resist pattern, there are the same problems as in the reticle inspection method.

In view of the above, the first object of the present invention is to make it possible to easily and surely inspect whether or not a reticle is manufactured according to a standard, and to make a resist exposed using the reticle. A second object is to make it possible to easily and surely detect a pattern defect in the pattern or the pattern of the underlayer film etched using the resist pattern.

[0012]

In order to achieve the above first and second objects, the present invention provides a resist film pattern or a pattern formed by exposing through a reticle while sequentially changing exposure conditions. A portion where a pattern defect is detected in a pattern of a base film etched using a pattern of a resist film, and the position of the reticle corresponding to the position of the pattern defect in the pattern in which the number of pattern defects is within a predetermined range easily causes the pattern defect. Is to be specified.

Specifically, the means for solving the problems according to the first aspect of the present invention is to provide a method for inspecting a reticle by exposing a resist film on a substrate using a reticle to be inspected while sequentially changing exposure conditions. After transferring the pattern of the inspection reticle,
A pattern forming step of forming a plurality of patterns of the resist film by developing the resist film to which the pattern of the reticle to be inspected is transferred, and detecting a pattern defect in the plurality of patterns of the resist film. Defect detection step, and the pattern defect is detected and the position of the inspected reticle corresponding to the position of the pattern defect in the pattern made of the resist film in which the number of detected pattern defects is within a predetermined number is generated. The configuration includes a part specifying step of specifying that the part is an easy part to be made, and an inspection step of performing a quality inspection on a part of the reticle to be inspected where the pattern defect is likely to occur.

According to the structure of claim 1, when the resist film on which the pattern of the reticle to be inspected is transferred is developed to form a pattern by exposing while sequentially changing the exposure condition, the resist is changed in accordance with the change of the exposure condition. The number of pattern defects detected in the film pattern changes gradually. Therefore, the position of the reticle to be inspected, which corresponds to the position of the pattern defect in the pattern of the resist film in which the number of pattern defects is within a predetermined number, is a site where the pattern defect is likely to occur.

Specifically, the means for solving the problems of the second aspect of the present invention is to provide a method for inspecting a reticle, which comprises exposing a resist film on a substrate using a reticle to be inspected while sequentially changing the exposure conditions. After transferring the pattern of the inspection reticle,
A pattern forming step of forming a plurality of patterns of the resist film by developing the resist film to which the pattern of the reticle to be inspected is transferred, and a step of forming the resist film using the plurality of patterns of the resist film. An etching step of forming a plurality of patterns of the underlayer film by etching the underlying film formed on the lower side, and a defect detection step of detecting pattern defects in the plurality of patterns of the underlayer film A pattern defect is detected, and the position of the reticle to be inspected corresponding to the position of the pattern defect in the pattern made of the underlying film in which the number of detected pattern defects is within a predetermined number is a portion that easily causes the pattern defect. And the pattern defect in the reticle to be inspected. It is an arrangement and a test step for inspecting the quality with respect to likely sites to generate.

According to the structure of claim 2, the resist film on which the pattern of the reticle to be inspected is transferred is developed to form a pattern by exposing while sequentially changing the exposure conditions, and the pattern of the resist film is used. When the underlayer film is etched, the number of pattern defects detected in the pattern of the underlayer film gradually changes as the exposure conditions change. Therefore, the position of the reticle to be inspected, which corresponds to the position of the pattern defect in the pattern of the base film in which the number of pattern defects is within a predetermined number, is a site where the pattern defect is likely to occur.

According to a third aspect of the present invention, in the structure of the first or second aspect, the exposure condition in the pattern forming step is any one of an exposure time, an exposure energy and a focus.
One of the configurations is added.

According to a fourth aspect of the present invention, in the structure according to the first or second aspect, the defect detecting step includes a pattern formed on the first chip exposed while sequentially changing the exposure condition, and a pattern defect. A configuration including a step of detecting a pattern defect by comparing with a pattern formed on the second chip exposed under the exposure condition that does not occur is added.

According to a fifth aspect of the invention, in addition to the configuration of the fourth aspect, a configuration in which the second chip is formed on both sides of the first chip is added.

According to a sixth aspect of the present invention, in the structure according to the first or second aspect, at least one of an element isolation region, a transistor element and an electrode for a transistor element is already formed on the substrate in the pattern forming step. The configuration is added.

[0021] Specifically, the means for solving the problems according to the invention of claim 7 is that the reticle inspection device exposes the resist film on the substrate by sequentially changing the exposure conditions by using the reticle to be inspected. Defect detection means for transferring a pattern of an inspection reticle, and detecting a pattern defect in a plurality of patterns of the resist film formed by developing the resist film to which the pattern of the inspected reticle is transferred, A pattern defect is detected, and the position of the reticle to be inspected corresponding to the position of the pattern defect in the pattern made of the resist film in which the number of detected pattern defects is within a predetermined number is a portion where the pattern defect is easily generated. And a part identification unit that identifies the pattern defect in the reticle to be inspected. It is an arrangement and a test means for 査.

According to the structure of claim 7, when a pattern defect is detected in the pattern obtained by developing the resist film to which the pattern of the reticle to be inspected is transferred by exposing while sequentially changing the exposure condition, the exposure condition is detected. The number of pattern defects detected in the pattern of the resist film gradually changes with the change of. Therefore, the position of the reticle to be inspected, which corresponds to the position of the pattern defect in the pattern of the resist film in which the number of pattern defects is within a predetermined number, is a site where the pattern defect is likely to occur.

[0023] Specifically, the solution means taken by the invention of claim 8 is to expose the resist film on the substrate to the resist film on the substrate by exposing the resist film on the substrate while sequentially changing the exposure conditions. The pattern of the reticle for inspection is transferred, and the resist film on the lower side of the resist film formed by etching using a plurality of resist patterns obtained by developing the resist film on which the pattern of the reticle for inspection is transferred. Defect detecting means for detecting a pattern defect in a plurality of patterns formed of an underlayer film, and a pattern defect detected and a position of the pattern defect in the pattern formed of the underlayer film in which the number of detected pattern defects is within a predetermined number And a reticle to be inspected for identifying a position of the reticle to be inspected that is a site where pattern defects are likely to occur, It is an arrangement and a test means for testing the quality with respect to likely sites to generate the pattern defects in.

According to the structure of claim 8, the resist film on which the pattern of the reticle to be inspected is transferred is developed to form a pattern by exposing while sequentially changing the exposure conditions, and the pattern of the resist film is used. When pattern defects are detected in the etched underlayer film, the number of pattern defects detected in the pattern of the underlayer film gradually changes as the exposure conditions change. Therefore, the position of the reticle to be inspected, which corresponds to the position of the pattern defect in the pattern of the base film in which the number of pattern defects is within a predetermined number, is a site where the pattern defect is likely to occur.

Specifically, a solution means taken by the invention of claim 9 is that the pattern inspection method comprises exposing the first resist film on a substrate using a reticle while sequentially changing the exposure conditions to expose the reticle. First pattern forming step of forming a plurality of patterns of the first resist film by developing the first resist film to which the reticle pattern has been transferred, Defect detecting step of detecting pattern defects in a plurality of patterns of the resist film, and pattern defects are detected and detected in the pattern of the first resist film in which the number of detected pattern defects is within a predetermined number. A part specifying step of specifying the position of the reticle corresponding to the position of the pattern defect as a part where the pattern defect is likely to occur; The second resist film is exposed by using the reticle in which a portion where a pattern defect is easily generated is specified, and then the exposed second resist film is developed to form a pattern made of the second resist film. A second pattern forming step and an inspecting step for inspecting the quality of the portion corresponding to the portion of the reticle where the pattern defect of the reticle is likely to occur in the pattern made of the second resist film are provided. It is a thing.

According to the structure of claim 9, the number of pattern defects is within a predetermined number as in the structure of claim 1.
Since the position of the reticle corresponding to the position of the pattern defect detected in the pattern of the resist film becomes the part where the pattern defect is easily generated in the pattern of the resist film, the reticle in which the part where the pattern defect is easily specified is specified is used. When a pass / fail inspection is performed on a portion corresponding to a portion of the reticle in which the pattern defect of the second resist film is formed that is likely to occur, a portion where the pattern defect of the second resist film pattern is likely to occur Will be inspected.

According to a tenth aspect of the present invention, a pattern inspecting method exposes a first resist film on a substrate using a reticle while sequentially changing the exposure conditions to expose the reticle pattern. After the transfer, a first pattern forming step of forming a plurality of patterns of the first resist film by developing the first resist film to which the pattern of the reticle has been transferred, and the first resist film. A defect detecting step of detecting a pattern defect in a plurality of patterns, and a position of the pattern defect in the pattern made of the first resist film in which the pattern defect is detected and the number of detected pattern defects is within a predetermined number. A site specifying step of specifying the corresponding position of the reticle as a site where pattern defects are likely to occur, and a second resist film on the substrate. On the other hand, the second reticle is exposed by using the reticle in which a portion where a pattern defect is easily generated is specified, and then the exposed second resist film is developed to form a pattern of the second resist film. Etching for forming a pattern made of the base film by performing etching on the base film formed under the second resist film using the steps and the pattern made of the second resist film. It is configured to include a step and an inspection step of inspecting the quality of a portion corresponding to a portion of the reticle in which the pattern of the base film is likely to cause a pattern defect.

According to the structure of claim 10, as in the structure of claim 1, the reticle corresponding to the position of the pattern defect detected in the pattern made of the first resist film in which the number of pattern defects is within a predetermined number. Since the position of is a portion where pattern defects are likely to occur in the resist film pattern, etching should be performed using the second resist film pattern formed using the reticle in which the portion where pattern defects are likely to occur is specified. When the pass / fail inspection is performed on the portion of the pattern of the underlayer film corresponding to the portion where the pattern defects of the reticle are easily generated, the inspection is performed on the portion of the pattern of the underlying film where the pattern defects are likely to occur. It will be.

According to the eleventh aspect of the present invention, a pattern inspecting method is used, in which a pattern of the reticle is exposed by exposing a first resist film on a substrate using a reticle while sequentially changing the exposure conditions. After the transfer, a first pattern forming step of forming a plurality of patterns of the first resist film by developing the first resist film to which the pattern of the reticle has been transferred, and the first resist film. An etching step of forming a plurality of patterns of the underlying film by performing etching on the underlying film formed under the first resist film using the plurality of patterns of the underlying film; A defect detecting step of detecting pattern defects in a plurality of patterns formed of a ground film, and a pattern defect is detected and the number of detected pattern defects is equal to or more than a predetermined number. A part specifying step of specifying the position of the reticle corresponding to the position of the detected pattern defect in the pattern made of the underlying film as a part where pattern defects are likely to occur, and a second resist film on the substrate. On the other hand, the second reticle is exposed by using the reticle in which a portion where a pattern defect is easily generated is specified, and then the exposed second resist film is developed to form a pattern of the second resist film. It is configured to include a step and an inspection step of inspecting the quality of the portion corresponding to the portion of the reticle where the pattern defect of the reticle is likely to occur in the pattern made of the second resist film.

According to the structure of claim 11, similarly to the structure of claim 2, the position of the reticle corresponding to the position of the pattern defect detected in the pattern of the underlying film in which the number of pattern defects is within a predetermined number is lower. A portion of the ground film pattern that easily causes pattern defects. Therefore, a portion of the second resist film pattern formed by using the reticle in which pattern defects are easily generated is likely to cause pattern defects of the reticle. When the pass / fail inspection is performed on the portion corresponding to, the inspection is performed on the portion in the pattern of the second resist film where the pattern of the base film is likely to cause a pattern defect.

Specifically, the reticle according to the invention as set forth in claim 12 is a method for inspecting a pattern, in which the first resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle. First pattern forming step of forming a plurality of patterns of the first resist film by developing the first resist film to which the reticle pattern has been transferred, A plurality of patterns of the first underlayer film by etching the first underlayer film formed under the first resist film using the plurality of patterns of the first underlayer film. A first etching step of forming a pattern defect, a defect detection step of detecting a pattern defect in a plurality of patterns formed of the first base film, and a pattern defect being detected and detected. A portion that specifies the position of the reticle corresponding to the position of the detected pattern defect in the pattern made of the first underlayer film, in which the number of the generated pattern defects is within a predetermined number, as the portion that is likely to generate the pattern defect. After the exposure is performed by using the reticle in which the step of specifying the pattern defect and the portion of the second resist film on the substrate which is likely to occur are specified, the exposed second resist film is developed and the second resist film is developed. A second pattern forming step of forming a pattern made of a resist film, and a second base film formed below the second resist film using the pattern made of the second resist film. A second etching step of forming a pattern made of the second underlayer film by performing etching, and a reticle of the reticle in the pattern made of the second underlayer film. It is an arrangement and a test step for inspecting the quality with respect to portions corresponding to the likely site to generate turn defects.

According to the structure of claim 12, similar to the structure of claim 2, the reticle corresponding to the position of the pattern defect detected in the pattern of the first underlayer film in which the number of pattern defects is within a predetermined number. Since the position is a portion where pattern defects are likely to occur in the underlying film pattern, etching is performed using the pattern of the second resist film formed using the reticle in which the portion where pattern defects are likely to occur is specified. When a pass / fail inspection is performed on a portion of the obtained pattern of the second underlayer film that corresponds to the pattern defect of the reticle, a defect inspection is performed on the portion of the second underlayer film pattern where the pattern defect easily occurs. Will be inspected.

According to a thirteenth aspect of the present invention, in addition to the configurations of the ninth to twelfth aspects, the exposure condition in the first pattern forming step is any one of exposure time, exposure energy and focus. To do.

According to a fourteenth aspect of the present invention, in the structure of the ninth to twelfth aspects, the defect detection step includes a pattern formed on the first chip exposed while sequentially changing the exposure conditions,
The second exposed under the exposure condition that does not cause pattern defects
The structure including a step of detecting a pattern defect by comparing the pattern formed on the chip of FIG.

According to a fifteenth aspect of the present invention, a configuration in which the second chip is formed on both sides of the first chip is added to the configuration of the fourteenth aspect.

According to a sixteenth aspect of the present invention, in the structure of the ninth to twelfth aspects, at least one of an element isolation region, a transistor element and an electrode for a transistor element is provided on the substrate in the first pattern forming step. The structure already formed is added.

Specifically, the solution means taken by the seventeenth aspect of the invention is to form a pattern inspection method in the steps of producing an inspection wafer having a resist pattern having no pattern defect, and in forming a semiconductor device. And a step of inspecting the resist pattern on the wafer for pattern defects by comparing the image information of the resist pattern on the wafer with the image information of the resist pattern on the inspection wafer. The configuration is as follows.

[0038] Specifically, a solution means taken by the invention of claim 18 is that a pattern inspection device is provided on a resist film on a substrate.
A reticle is used to perform exposure while sequentially changing the exposure conditions to transfer the pattern of the reticle, and the resist film on which the pattern of the reticle is transferred is developed to form a plurality of patterns of the resist film. On the other hand, the defect detection means for detecting a pattern defect, and the reticle corresponding to the position of the detected pattern defect in the pattern made of the resist film in which the pattern defect is detected and the number of detected pattern defects is within a predetermined number And a resist film formed by using the reticle in which the position where the pattern defect is easily generated is specified, and the reticle in which the position where the pattern defect is easily generated is specified is formed. In the part corresponding to the part where pattern defects of the reticle are likely to occur in the pattern of the ground film It is an arrangement and a test means for testing the quality and.

According to the structure of the eighteenth aspect, since the position of the reticle corresponding to the position of the pattern defect in the pattern made of the resist film in which the number of pattern defects is within a predetermined number is a site where the pattern defect is likely to occur, this reticle. When a pass / fail test is performed on a portion corresponding to a portion of the reticle where a pattern defect of the reticle is likely to occur in the pattern formed of the resist film formed using The inspection is performed on a portion of the pattern formed by the pattern that is likely to cause a pattern defect.

Specifically, a solution means taken by the invention of claim 19 is that a pattern inspection device is provided on a resist film on a substrate.
By exposing while sequentially changing the exposure conditions using a reticle to transfer the pattern of the reticle, and by etching using a plurality of resist patterns obtained by developing the resist film to which the pattern of the reticle is transferred Defect detection means for detecting pattern defects in a plurality of patterns of the underlying film formed under the resist film, and the underlying film in which pattern defects are detected and the number of detected pattern defects is within a predetermined number. A part specifying means for specifying the position of the reticle corresponding to the position of the detected pattern defect in the pattern consisting of the position as a part where the pattern defect is likely to occur, and the reticle where the part where the pattern defect is likely to occur is specified. In the pattern consisting of the resist film formed by using or the underlying film below the resist film It is an arrangement and a test means for testing the quality with respect to portions corresponding to those likely site generates a pattern defect of a reticle.

According to the nineteenth aspect of the invention, the position of the reticle corresponding to the position of the pattern defect in the pattern made of the underlying film having the number of pattern defects within a predetermined number is a site where the pattern defect is likely to occur. When a pass / fail test is performed on a portion corresponding to a portion of the reticle where a pattern defect of the reticle is likely to occur in the pattern formed of the resist film formed using The inspection is performed on the portion where the pattern defect is likely to occur.

[0042]

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, a reticle inspection method and an inspection apparatus, a pattern inspection method and an inspection apparatus according to each embodiment of the present invention will be described with reference to the drawings.

(First Embodiment) FIG. 1 shows a first embodiment of the present invention.
7 shows a distribution of changes in exposure time used in the reticle inspection method and the inspection apparatus according to the embodiment. That is, the first device on the semiconductor wafer 1 which is in the middle of the manufacturing process of the semiconductor device.
33 for the resist film of the first chip in region 2 of
The exposure is performed by decreasing the exposure time from 0 msec to 240 msec by 10 msec, and the bridge is formed on the resist film of the second chip in the second region 3 located on both sides of the first region 2 on the semiconductor wafer 1. Each exposure is performed for 330 msec, which is a sufficient exposure time that does not cause a defect.

Next, the exposed resist film is developed by changing the exposure time as described above to form a resist pattern, and then the resist pattern is used as a mask for the conductive film as the base film. A wiring pattern is formed by etching, and a defect inspection using image recognition is performed on the formed wiring pattern. This defect inspection is performed by comparing the image information of the wiring pattern of each chip located in the first area 2 with the image information of the wiring pattern of each chip located in the second areas 3 on both sides.

FIG. 2 shows the location of a bridging defect that has occurred in the wiring pattern of the first chip located in the first region 2. In FIG. 2, 10 is a diffusion layer, 11A and 11
It can be seen that B and 11C are gate electrodes and 12A, 12B and 12C are wiring patterns, and the wiring patterns 12A and 12C are short-circuited. FIG. 3 (a),
As shown in FIG. 3B, when the bridge portion 13a is formed in the resist pattern 13, a short circuit portion 12a is generated in the wiring pattern 12 etched by using the resist pattern 13 as shown in FIG. 3C. is there.

FIG. 4 shows the relationship between the exposure time for the resist film of the first chip in the first region 2 and the bridge failure. In the first chip 20, the bridge portion A,
B, C, D and E are generated, and bridge portions A, B, C and E are generated in the first chip 21, and the first chip 22 is generated.
, The bridge portions A and B are generated, and the first chip 2
3, the bridge portion B is generated, and the first chip 24
It can be seen that no bridge portion is generated in.
That is, the number of bridge portions decreases as the exposure time increases.

An example of the method of detecting the bridge portion will be described. For example, after image recognition is performed by an optical microscope provided in the defect inspection apparatus to detect all the bridge portions for the first chip having a short exposure time, The presence or absence of the bridge portion is detected again with respect to the detected bridge portion by an electron microscope such as SEM. This is because it is difficult to find the bridge portion by the electron microscope from the beginning, but the bridge portion of 1.0 μm or less cannot be surely detected by the optical microscope. The presence / absence of the bridge portion is also inspected at the position of the second chip corresponding to the position of the bridge portion detected in the first chip. The above work is sequentially performed from the first chip having a relatively short exposure time to the first chip having a relatively long exposure time until the number of bridge portions is reduced to within a predetermined number, for example, about 1 to 3. .

The position of the bridge portion B which has been found to the end by the above work can be specified as the position where the bridge portion is most likely to occur in the wiring pattern. next,
The quality of the reticle is inspected by measuring the pattern dimension of a portion of the reticle corresponding to the position of the bridge portion B and determining whether the pattern dimension of this portion is within the regulation.

In the first embodiment, the bridge portion is confirmed by the electron microscope after the bridge portion is detected by the optical microscope. However, when the bridge portion can be surely detected by the electron microscope, Alternatively, the bridge portion may be detected from the beginning with an electron microscope.

Further, in the first embodiment, the exposure time is reduced by 10 msec from 330 msec, but the exposure time and the step of reducing the exposure time are appropriately set according to the design rules of the exposure apparatus and the reticle. It can be changed.

Further, in the first embodiment, the pattern defect is detected in the bridge portion, but it may be detected in the open portion (broken portion).

Further, in the first embodiment, the bridge portion is detected by gradually reducing the exposure time. However, instead of the change in the exposure time, the change in the exposure energy and the change in the focus (focus position). Change to the plus side or minus side), a change in alignment, a change in wavelength of the light source, or the like, may be performed to change parameters that affect the exposure conditions. In the manufacturing process of a semiconductor device, a resist pattern can be formed by sequentially changing parameters that greatly affect the occurrence of pattern defects, and the pattern defects can be detected in the wiring pattern etched using the resist pattern.

Further, in the first embodiment, the conductive layer is etched using the resist pattern as a mask to form a wiring pattern, and the bridge portion is detected in the formed wiring pattern. When the detection sensitivity is obtained in the resist pattern and the pattern defect of the resist pattern can be surely detected, the pattern defect may be detected in the resist pattern.

Further, in the first embodiment, the second areas 3 for making the exposure time constant are provided on both sides of the first area 2 for gradually changing the exposure time. The first area 2 by comparison with
If it is possible to detect the pattern defect in the chip, the pattern defect may be detected by comparing the chip in the first region 2 with the reticle creation data without providing the second region 3.

(Second Embodiment) A pattern inspection method according to a second embodiment of the present invention will be described below with reference to FIG.

FIG. 5 is a flow chart in the case where the reticle inspection method described in the first embodiment is applied to the pattern inspection in the semiconductor device manufacturing process.

First, an element isolation region is formed on a semiconductor substrate in step S1, a gate oxide film of a transistor element is formed in step S2, and then a gate electrode film of the transistor element is deposited in step S3, and then step S4. At, a resist pattern for a gate electrode is formed.

Next, in step S5, pattern defects in the resist pattern for the gate electrode are detected by visual inspection using a microscope. In this case, a pattern defect in the reticle identified by the reticle inspection method shown in the first embodiment, for example, a portion of the resist pattern corresponding to a portion where a bridge portion is likely to be generated is inspected for the presence or absence of the bridge portion. . In this inspection, when the bridge portion is detected, the resist pattern is removed, the process returns to the resist electrode forming step for the gate electrode, and the resist pattern is formed again.

If no bridge portion is detected in step S5, a gate electrode is formed in step S6 by dry etching, for example.

According to the second embodiment, the presence or absence of the bridge portion is inspected at the portion of the reticle where the bridge portion is most likely to be formed in the resist pattern. It can be determined that the bridge portion does not occur in all other regions in the resist pattern.

In the second embodiment, the presence / absence of the bridge portion as the pattern defect has been described, but it goes without saying that an inspection for an open defect or the like may be performed instead.

In the second embodiment, the process of forming the resist pattern for the gate electrode has been described as an example, but the present invention is applicable to the process of forming the resist pattern for forming electrodes and wirings other than the gate electrode. Can also be applied. Further, instead of detecting the pattern defect in the resist pattern, the pattern defect may be detected in the base film of the resist pattern.

Further, as in the first embodiment, when the position where pattern defects are likely to occur on the reticle is specified by changing other parameters such as focus instead of changing the exposure time, It goes without saying that the pattern defect is detected for the portion where the pattern defect corresponding to the parameter is likely to occur.

(Third Embodiment) A pattern inspection apparatus according to a third embodiment of the present invention will be described below with reference to FIG.

In FIG. 6, 31 is a wafer on which a resist pattern is formed, 32 is a chip formed on the wafer 31, 33 is an optical lens, 34 is a CCD image pickup device, 3
5 is image data obtained by the CCD imaging device 34, 3
Reference numeral 6 is design data at a position where the bridge portion is most likely to occur on the reticle.

First, by using the reticle inspection method shown in the first embodiment, a portion of the reticle for forming aluminum wiring where a bridge portion is likely to occur is specified, and design data 36 at the time of manufacturing the reticle at this portion is specified. It is stored in the inspection device in advance.

Next, after forming a resist pattern for aluminum wiring in the aluminum wiring forming process of the semiconductor device,
Area 32a in which a bridge portion of the chip 32 is likely to occur
Image is enlarged by the optical lens 33, captured by the CCD image capturing device 34, and captured as image data 35. After that, the image data 35 and the design data 36 are compared by a computer or the like to detect the presence or absence of a bridge portion in the chip 32.

The inspection apparatus according to the third embodiment does not inspect the entire surface of the chip 32, but inspects only the region 32a where the bridge portion is likely to occur, so that the inspection time can be remarkably shortened. . Therefore, it is possible to spend time on the image data processing and the calculation processing for comparison with the design data, which is also effective when detecting a minute bridge portion.

In the third embodiment, the resist pattern forming process for aluminum wiring has been described.
It goes without saying that the present invention is also effective for resist pattern forming steps other than those for aluminum wiring.

Although the resist pattern has been described in the third embodiment, the present invention removes the resist pattern after performing dry etching on the base film, for example, the conductive film using the resist pattern. It is also effective for an electrode or wiring pattern made of the obtained conductive film.

Further, in the third embodiment, the image data 35 is taken in based on the optical image of the chip 32, but instead of this, the image data 35 is taken in based on another image such as a secondary electron image. 35 may be incorporated.

(Fourth Embodiment) A pattern inspection method and a pattern inspection apparatus according to a fourth embodiment of the present invention will be described below with reference to FIG.

In FIG. 7, reference numeral 41 is a wafer to be inspected in which a resist pattern for a gate electrode is formed in the manufacturing process of a semiconductor device, and 42 is a resist pattern for a gate electrode in which no bridge portion is formed. The reference wafer 42, which is a wafer for use, is used as a reference when inspecting the wafer 41 to be inspected. 43 is a chip formed on the wafer 41 to be inspected,
44 is a chip formed on the reference wafer 42, 45,
46 is an optical lens, 47 and 48 are CCD image pickup devices, 49
Is image data obtained by the CCD image pickup device 47,
Is image data 50 obtained by the CCD image pickup device 48.

First, the reference wafer 4 on which a resist pattern for a gate electrode in which no bridge portion is formed is formed.
2 is prepared, and the wafer 41 to be inspected on which the resist pattern for the gate electrode is formed in the gate electrode forming step of the semiconductor device is mounted on the inspection device.

Next, the same area of the wafer 41 to be inspected and the wafer 42 for reference are respectively covered by the optical lenses 45,
The image is enlarged at 46, and captured as image data 49, 50 by the CCD imaging devices 27, 28. By comparing the image data 49 and the image data 50 with a computer or the like, the bridge portion of the chip 43 of the wafer 41 to be inspected is detected. In this case, as the image data 49 and 50, the wafer 41 to be inspected and the reference wafer 42, or the wafer 4 to be inspected by scanning the optical lenses 45 and 46 and the CCD imaging devices 47 and 48 in synchronization
Any position on 1 can be obtained.

According to the fourth embodiment, the wafer to be inspected 41 is inspected by comparison with the reference wafer 42 in which no bridge portion is generated. Therefore, the wafer to be inspected 41 can be inspected without using a reticle. Since it can be performed, it is possible to deal with the case where dust or the like adheres to the reticle and the pattern defect cannot be reliably detected.

In the fourth embodiment, the resist pattern forming process for the gate electrode has been described.
It goes without saying that the present invention can be applied to other resist pattern forming steps for electrodes or wirings.

Further, in the fourth embodiment, the chip 4
Although the image data 49, 50 are obtained based on the optical images of 3, 44, the image data 49, 50 may be obtained based on, for example, a secondary electron image instead of the optical image.

[0079]

According to the reticle inspection method of the first aspect of the present invention, the position of the reticle to be inspected corresponding to the position of the pattern defect in the pattern of the resist film in which the number of pattern defects is within a predetermined number is the pattern defect. Since it is a portion where the reticle to be inspected is easily generated, if the portion of the reticle to be inspected that is likely to cause the pattern defect is inspected, the quality inspection of the reticle to be inspected can be accurately performed in a short time.

According to the reticle inspection method of the second aspect of the invention, the position of the reticle to be inspected corresponding to the position of the pattern defect in the pattern of the base film in which the number of pattern defects is within a predetermined number causes the pattern defect. Since it is a portion that is easy to perform, if the quality of the portion of the reticle to be inspected where pattern defects are likely to occur is inspected, the quality of the reticle to be inspected can be accurately inspected in a short time. In addition, the pattern defect is often detected more easily in the case of the pattern made of the base film than in the case of the pattern made of the resist film, so that the pattern defect is easily detected.

According to the reticle inspection method of the third aspect of the present invention, since the exposure condition in the pattern forming step is any one of the exposure time, the exposure energy and the focus, the exposure time or the exposure energy is small. If it is changed to one, the part where bridging defects are likely to occur can be detected, if the exposure time or exposure energy is changed to one that is more likely to cause open defects, the focus can be changed to plus. When the focus is defocused to the side, the portion where the pattern defect is likely to be generated can be detected, and when the focus is changed to the minus side, the portion where the pattern defect is easily generated can be detected when the focus is defocused to the minus side.

According to the reticle inspection method of the fourth aspect of the present invention, the pattern formed on the first chip exposed by sequentially changing the exposure condition and the exposure condition that does not cause a pattern defect are exposed. Since the pattern defect is detected by comparing with the pattern formed on the second chip, the pattern defect in the pattern made of the resist film or the base film formed on the first chip can be easily and surely detected. be able to.

According to the reticle inspection method of the fifth aspect of the present invention, since the second chip is formed on both sides of the first chip, a pattern made of a resist film or a base film on the first chip. By comparing with a pattern formed of a resist film or a base film on the second chip provided on both sides of the first chip, it is possible to reliably detect a pattern defect in the pattern on the first chip. .

According to the reticle inspection method of the sixth aspect of the present invention, a resist film formed on a substrate on which at least one of the element isolation region, the transistor element and the electrode for the transistor element is already formed, or Since the pattern defect is detected in the pattern made of the base film, it is possible to detect the pattern defect in the pattern made of the resist film or the base film having the uneven surface formed by the manufacturing process of the semiconductor device. It is possible to specify a portion in which a pattern defect is likely to occur in a pattern formed of a resist film or a base film formed by a semiconductor device manufacturing process.

According to the reticle inspection apparatus of the seventh aspect of the present invention, the defect detection means for detecting a pattern defect in the resist film pattern and the position of the inspected reticle corresponding to the position of the pattern defect in the resist film pattern. And a means for inspecting a portion of the reticle to be inspected, which is likely to cause a pattern defect, for inspecting whether or not the pattern defect is likely to occur. The method of inspecting a reticle according to the invention can be surely realized.

According to the reticle inspection apparatus of the eighth aspect of the present invention, the defect detection means for detecting a pattern defect in the underlying film pattern and the position of the inspected reticle corresponding to the position of the pattern defect in the underlying film pattern. 3. The apparatus according to claim 2, further comprising: a portion specifying unit that specifies a portion where the pattern defect is likely to occur, and an inspection unit that inspects the portion of the reticle to be inspected where the pattern defect is likely to occur. The method of inspecting a reticle according to the invention can be surely realized.

According to the pattern inspection method of the ninth aspect, the pattern defect of the reticle is generated in the pattern of the second resist film formed by using the reticle in which the portion where the pattern defect is easily generated is specified. Since the pass / fail inspection is performed on the portion corresponding to the easy portion, the inspection is performed on the portion where the pattern defect in the pattern of the second resist film is likely to occur.
The quality inspection of the second resist film can be accurately performed in a short time.

According to the pattern inspection method of the tenth aspect of the present invention, it is obtained by etching using the pattern of the second resist film formed by using the reticle in which the portion where the pattern defect is likely to occur is specified. In order to inspect whether or not a portion of the underlying film pattern in which the reticle pattern defect is likely to occur is defective or not, it is necessary to inspect the portion of the underlying film pattern where the pattern defect is likely to occur. Therefore, the quality inspection of the base film can be accurately performed in a short time.

According to the pattern inspection method of the eleventh aspect of the present invention, the pattern defect of the reticle is generated in the pattern of the second resist film formed by using the reticle in which the portion where the pattern defect is easily generated is specified. In order to check the quality of the easy part and the corresponding part,
Since the portion of the pattern of the second resist film, which is likely to cause a pattern defect in the pattern of the base film, is inspected, the quality inspection of the second resist film can be accurately performed in a short time. .

According to the pattern inspection method of the twelfth aspect of the present invention, it is obtained by etching using the pattern of the second resist film formed by using the reticle in which the site where the pattern defect is likely to occur is specified. The second
In order to perform a pass / fail inspection on a portion of the underlying film pattern corresponding to the reticle pattern defect that is likely to occur, an inspection is performed on the portion of the second underlying film pattern where the pattern defect is likely to occur. Therefore, the quality inspection of the second underlayer film can be accurately performed in a short time.

According to the pattern inspection method of the thirteenth aspect, since the exposure condition in the pattern forming step is any one of the exposure time, the exposure energy and the focus, the exposure time or the exposure energy is small. If it is changed to the positive direction, the bridge defect can be reliably detected, if the exposure time or exposure energy is changed to the larger one, the open defect can be reliably detected, and if the focus is changed to the positive side, the focus is defocused to the positive side. The pattern defect can be reliably detected, and if the focus is changed to the minus side, the pattern defect when the focus is defocused to the minus side can be reliably detected.

According to the pattern inspection method of the fourteenth aspect of the present invention, the pattern formed on the first chip is exposed while sequentially changing the exposure condition, and the pattern is exposed under the exposure condition that does not cause a pattern defect. Since the pattern defect is detected by comparing with the pattern formed on the second chip, the pattern defect in the pattern made of the resist film or the base film formed on the first chip can be easily and surely detected. can do.

According to the pattern inspection method of the fifteenth aspect of the present invention, since the second chips are formed on both sides of the first chip respectively, the pattern formed of the resist film or the base film on the first chips is formed. By comparing with the pattern of the second chip provided on both sides of the first chip, it is possible to reliably detect the pattern defect in the pattern of the resist film or the base film on the first chip.

According to the pattern inspection method of the sixteenth aspect of the present invention, the resist film or the resist film formed on the substrate on which at least one of the element isolation region, the transistor element and the electrode for the transistor element is already formed. Since the pattern defect is detected in the pattern made of the base film, it is possible to reliably detect the pattern defect in the pattern made of the resist film or the base film having the uneven surface formed by the manufacturing process of the semiconductor device. it can.

According to the pattern inspection method of the seventeenth aspect, the image information of the resist pattern on the inspection wafer and the image information of the resist pattern on the wafer formed in the semiconductor device manufacturing process are compared. hand,
Since the presence or absence of a pattern defect is inspected for the resist pattern on the wafer, it is possible to reliably detect the pattern defect caused by the reticle such as dust adhering to the reticle.

According to the pattern inspection apparatus of the eighteenth aspect of the present invention, the defect detecting means for detecting a pattern defect in the resist film pattern and the reticle position corresponding to the pattern defect position in the resist film pattern are arranged. The part specifying means for specifying a part that is likely to cause a pattern defect, and the part corresponding to the part corresponding to the part that is likely to cause a pattern defect of the reticle in the pattern of the resist film or the underlying film below the resist film are good or bad. The inspection means for performing inspection according to claim 9,
The pattern inspection method according to the invention can be surely realized.

According to the pattern inspection apparatus of the nineteenth aspect of the present invention, the defect detecting means for detecting a pattern defect in the pattern of the underlying film and the position of the reticle corresponding to the position of the pattern defect in the pattern of the underlying film are used as the pattern defects. And a pass / fail inspection for a portion corresponding to a portion that easily causes a pattern defect of the reticle in the pattern formed by the resist film or the underlying film below the resist film. Since the inspection means for performing the above is provided, the pattern inspection method according to the invention of claim 11 or 12 can be surely realized.

[Brief description of drawings]

FIG. 1 is a diagram showing a distribution of changes in exposure time used in a reticle inspection method and an inspection apparatus according to a first embodiment of the present invention.

FIG. 2 is a diagram showing a location of a bridge defect that has occurred in a wiring pattern of a first chip located in a first region of a wafer.

3A and 3B are diagrams showing a bridge portion generated in a resist pattern, and FIG. 3C is a diagram showing a short circuit portion generated in a wiring pattern.

FIG. 4 is a diagram showing a relationship between an exposure time for a resist film of a first chip in a first region of a wafer and a bridge defect.

FIG. 5 is a flowchart showing a pattern inspection method according to a second embodiment of the present invention.

FIG. 6 is a diagram showing a configuration of a pattern inspection apparatus according to a third embodiment of the present invention.

FIG. 7 is a diagram showing a pattern inspection method and inspection apparatus according to a fourth embodiment of the present invention.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 Semiconductor wafer 2 1st area | region 3 2nd area | region 10 Diffusion layer 11A, 11B, 11C Gate electrode 12, 12A, 12B, 12C Wiring pattern 12a Short circuit part 13 Resist pattern 13a Bridge part 20, 21, 22, 23, 24 First chip 31 Wafer 32 Chip 33 Optical lens 34 CCD imager 35 Image data 36 Design data 41 Inspected wafer 42 Reference wafer 43 Chip formed on the inspected wafer 44 Formed on the reference wafer Chip 45,46 Optical lens 47,48 CCD imager 49,50 Image data

Claims (19)

[Claims] 1. A resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle to be inspected to transfer the pattern of the reticle to be inspected, and then the pattern of the reticle to be inspected is transferred. A pattern forming step of forming a plurality of patterns of the resist film by developing the resist film thus formed, a defect detecting step of detecting a pattern defect in the plurality of patterns of the resist film, and a pattern defect being detected A portion that identifies the position of the reticle to be inspected that corresponds to the position of the pattern defect in the pattern made of the resist film in which the number of detected pattern defects is within a predetermined number as the part that easily causes the pattern defect. The specific process and the quality of the portion of the reticle to be inspected that is likely to cause the pattern defect A method for inspecting a reticle, comprising: an inspection step for inspecting. 2. A resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle to be inspected to transfer the pattern of the reticle to be inspected, and then the pattern of the reticle to be inspected is transferred. Patterning step of forming a plurality of patterns of the resist film by developing the formed resist film, and a base film formed under the resist film using the plurality of patterns of the resist film Etching step for forming a plurality of patterns of the underlayer film, a defect detection step of detecting pattern defects in the plurality of patterns of the underlayer film, and a pattern defect being detected and detected. The number of pattern defects formed is within a predetermined number A part specifying step of specifying the corresponding position of the reticle to be inspected as a part where pattern defects are likely to occur, and an inspection to perform pass / fail inspection on a part of the reticle to be inspected where the pattern defects are likely to occur A method for inspecting a reticle, which comprises: 3. The reticle inspection method according to claim 1, wherein the exposure condition in the pattern forming step is any one of exposure time, exposure energy, and focus. 4. The defect detecting step comprises forming a pattern formed on a first chip exposed while sequentially changing an exposure condition and a second chip exposed under an exposure condition that does not cause a pattern defect. The reticle inspection method according to claim 1, further comprising a step of detecting a pattern defect by comparing the formed pattern with the formed pattern. 5. The reticle inspection method according to claim 4, wherein the second chips are formed on both sides of the first chip, respectively. 6. The substrate according to claim 1, wherein at least one of an element isolation region, a transistor element, and an electrode for a transistor element is already formed on the substrate in the pattern forming step. Reticle inspection method. 7. A resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle to be inspected to transfer the pattern of the reticle to be inspected, and the pattern of the reticle to be inspected is transferred. Defect detecting means for detecting pattern defects in a plurality of patterns of the resist film formed by developing the resist film, and the pattern defects are detected and the number of detected pattern defects is within a predetermined number. Site specifying means for specifying the position of the reticle to be inspected corresponding to the position of the pattern defect in the pattern made of the resist film as a site where a pattern defect is likely to occur, and the pattern defect in the reticle to be inspected A reticle inspection device that is provided with inspection means for inspecting a part that is easy to perform. Apparatus. 8. A resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle to be inspected to transfer the pattern of the reticle to be inspected, and the pattern of the reticle to be inspected is transferred. Defect detection means for detecting pattern defects in a plurality of patterns of the underlying film below the resist film formed by etching using a plurality of resist patterns obtained by developing the resist film, and a pattern A defect is detected, and the position of the reticle to be inspected corresponding to the position of the pattern defect in the pattern made of the underlying film in which the number of the detected pattern defects is within a predetermined number is a portion where a pattern defect is easily generated. Part identification means for specifying, and inspection of the quality of the part of the reticle to be inspected that is likely to cause the pattern defect Inspection device of the reticle, characterized in that it comprises a checking means for performing. 9. A first resist having a reticle pattern transferred onto a first resist film on a substrate by exposing the reticle while sequentially changing the exposure conditions to transfer the reticle pattern. By developing the film,
A first pattern forming step of forming a plurality of patterns of a first resist film; a defect detecting step of detecting pattern defects in the plurality of patterns of the first resist film; and a pattern defect being detected and detected. A portion that specifies the position of the reticle corresponding to the position of the pattern defect detected in the pattern made of the first resist film, in which the number of the generated pattern defects is within a predetermined number, as the portion that easily causes the pattern defect. After the exposure is performed using the reticle in which the specifying step and the portion where the pattern defects are likely to occur are specified with respect to the second resist film on the substrate, the exposed second resist film is developed and the second resist film is developed. A second pattern forming step of forming a pattern made of a resist film, and a step of forming the pattern of the reticle in the pattern made of the second resist film. A pattern inspecting method, comprising: an inspection step of inspecting a portion that is likely to generate a pattern defect and a portion corresponding to the defect. 10. A first resist having a reticle pattern transferred onto a first resist film on a substrate by exposing the reticle pattern while sequentially changing exposure conditions, and then transferring the reticle pattern. A first pattern forming step of forming a plurality of patterns of a first resist film by developing the film; a defect detecting step of detecting pattern defects in the plurality of patterns of the first resist film; A pattern defect is detected, and the position of the reticle corresponding to the position of the pattern defect in the pattern made of the first resist film in which the number of detected pattern defects is within a predetermined number is a portion where the pattern defect is easily generated. And a portion specifying step where a pattern defect is likely to occur in the second resist film on the substrate is specified. A second pattern forming step of forming a pattern of the second resist film by developing the exposed second resist film after exposing using the reticle; and using the pattern of the second resist film. An etching step of forming a pattern made of the underlayer film by performing etching on the underlayer film formed under the second resist film, and a pattern of the reticle in the pattern made of the underlayer film. A method for inspecting a pattern, comprising: an inspection step of inspecting whether a defect-prone portion and a corresponding portion are inspected. 11. A first resist having a reticle pattern transferred onto a first resist film on a substrate by exposing the reticle while sequentially changing exposure conditions, and then transferring the reticle pattern. A first pattern forming step of forming a plurality of patterns of a first resist film by developing the film; and a step of forming a plurality of patterns of the first resist film under the first resist film. An etching step of forming a plurality of patterns of the underlying film by performing etching on the underlying film formed on the side, and a defect detection step of detecting pattern defects in the plurality of patterns of the underlying film. A pattern defect is detected and the number of detected pattern defects is within a predetermined number. A part specifying step for specifying the position of the reticle corresponding to the position of the turn defect as a part where pattern defects are likely to occur, and a part where pattern defects are likely to occur for the second resist film on the substrate are specified. And a second pattern forming step of developing the exposed second resist film to form a pattern of the second resist film after the exposure using the reticle, and a pattern of the second resist film. 2. A pattern inspection method, comprising: an inspection step of inspecting whether or not a portion of the reticle where pattern defects are likely to occur and a portion corresponding to the portion. 12. A first resist on which a reticle pattern is transferred after exposing the first resist film on a substrate by sequentially changing the exposure conditions using a reticle to transfer the pattern of the reticle. A first pattern forming step of forming a plurality of patterns of a first resist film by developing the film; and a step of forming a plurality of patterns of the first resist film under the first resist film. By etching the first base film formed on the side,
A first etching step of forming a plurality of patterns of the underlying film, a defect detecting step of detecting pattern defects in the plurality of patterns of the first underlying film, and a pattern in which the pattern defects are detected and detected A part specifying step of specifying the position of the reticle corresponding to the position of the detected pattern defect in the pattern made of the first underlayer film in which the number of defects is within a predetermined number as a part where pattern defects are likely to occur; After exposing the second resist film on the substrate by using the reticle in which a portion where a pattern defect is likely to occur is specified, the exposed second resist film is developed to remove the second resist film from the second resist film. A second pattern forming step of forming a pattern consisting of the second resist film and a pattern consisting of the second resist film formed below the second resist film. A second etching step for forming a pattern made of the second underlayer film by etching the second underlayer film being formed, and the reticle pattern in the pattern made of the second underlayer film. A method for inspecting a pattern, comprising: an inspection step of inspecting whether a defect-prone portion and a corresponding portion are inspected. 13. The exposure condition in the first pattern forming step is any one of an exposure time, an exposure energy and a focus.
Item 12. The pattern inspection method according to any one of items 1 to 12. 14. The defect detection step comprises: forming a pattern formed on a first chip that is exposed while sequentially changing an exposure condition, and a second chip exposed under an exposure condition that does not cause a pattern defect. The pattern inspection method according to claim 9, further comprising a step of detecting a pattern defect by comparing the formed pattern with the formed pattern. 15. The reticle inspection method according to claim 14, wherein the second chips are formed on both sides of the first chip, respectively. 16. The device according to claim 9, wherein at least one of an element isolation region, a transistor element, and an electrode for a transistor element is already formed on the substrate in the first pattern forming step. 13. The pattern inspection method according to any one of 12. 17. A process of producing an inspection wafer having a resist pattern having no pattern defects, image information of a resist pattern formed on a wafer in a semiconductor device manufacturing process, and a resist pattern formed on the inspection wafer. And a step of inspecting the resist pattern on the wafer for the presence or absence of a pattern defect. 18. A resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle to transfer the pattern of the reticle, and the resist film to which the pattern of the reticle is transferred is developed. Defect detection means for detecting pattern defects in a plurality of patterns formed of the resist film, and a pattern formed of the resist film in which pattern defects are detected and the number of detected pattern defects is within a predetermined number The reticle is formed by using a part specifying unit that specifies the position of the reticle corresponding to the position of the detected pattern defect as a part where the pattern defect is likely to occur, and the reticle where the part where the pattern defect is likely to occur is specified. Pattern of the reticle in a pattern composed of a resist film or a base film below the resist film Inspection device pattern characterized by comprising an inspection means for inspecting the quality with respect to the corresponding site and easily site to generate Recessed. 19. A resist film on a substrate is exposed by sequentially changing exposure conditions using a reticle to transfer the pattern of the reticle, and the resist film to which the pattern of the reticle is transferred is developed and obtained. Defect detecting means for detecting pattern defects in a plurality of patterns of the underlying film below the resist film formed by etching using a plurality of resist patterns, and a pattern in which the pattern defects are detected and detected A part specifying means for specifying the position of the reticle corresponding to the position of the detected pattern defect in the pattern made of the underlying film having the number of defects within a predetermined number as a part where a pattern defect is likely to occur, and a pattern defect Of a resist film formed by using the reticle in which a portion that easily causes Inspection device pattern characterized by comprising an inspection means for inspecting the quality with respect to portions corresponding to those likely site generates a pattern defect of the reticle in the pattern consisting of the side of the base film.