JPH09107155A - Semiconductor light emitting element - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element that is comprised of II-VI group compound semiconductor that has low operating voltage, high reliability and a long life and that can be manufactured easily. SOLUTION: In a semiconductor light emitting element that is deposited on a semiconductor substrate, such as a GaAs substrate 1, with the II-VI group compound semiconductor layers 3 to 11 that include an n type clad layer, an active layer and a p type clad layer, the uppermost or the lowermost II-VI group compound semiconductor layer that is a terminal layer, such as a p type ZnSe contact layer 11, is grown by a organic metal chemical vapor growth method or an organic metal molecular beam epitaxy method. In another case, a terminal layer comprises a ZnCdSe layer or a ZnCdSeTe layer.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor light emitting device, and more particularly to a semiconductor light emitting device using a II-VI compound semiconductor.

[0002]

2. Description of the Related Art In recent years, there has been an increasing demand for semiconductor light emitting devices such as semiconductor lasers and light emitting diodes capable of emitting green or blue light in order to increase the recording / reproducing density or increase the resolution of optical disks and magneto-optical disks. Research is being actively conducted with the aim of realizing this.

Materials used for manufacturing such a semiconductor light emitting device capable of emitting green or blue light are Zn and C.
Group II elements such as d, Mg, Hg, Be and S, Se, T
Group II-VI compound semiconductors comprising Group VI elements such as e are most promising. In particular, quaternary mixed ZnMgS
Se has excellent crystallinity and can be easily grown on a GaAs substrate which is easily available. For example, when a semiconductor laser capable of emitting blue light is manufactured using this GaAs substrate, a clad layer, an optical waveguide layer, etc. It is known to be suitable for (for example, Electronics Letters 28 (1992) p.1798).

In order to obtain a semiconductor light emitting device having a high luminous efficiency, a semiconductor light emitting device using the II-VI group compound semiconductor, particularly a semiconductor light emitting device using a ZnMgSSe layer as a cladding layer is manufactured using a GaAs substrate. It is necessary that the clad layer or the like grown on the GaAs substrate directly or via the buffer layer has excellent crystallinity.

Conventionally, a semiconductor light emitting device using this II-VI group compound semiconductor, particularly ZnMg in the cladding layer, has been used.
The semiconductor light emitting device using the SSe layer is formed by n-type Zn on a n-type GaAs substrate by the molecular beam epitaxy (MBE) method.
It is generally manufactured by sequentially growing an MgSSe clad layer, an active layer, a p-type ZnMgSSe clad layer, a p-type ZnSe contact layer, and the like, and then forming a p-side electrode on the p-type ZnSe contact layer. It was However, it is difficult to increase the acceptor concentration of the p-type ZnSe contact layer.
It was difficult to make the p-side electrode in ohmic contact with the Se contact layer. For this reason, there is a problem that a large amount of heat is generated at the contact portion of the p-side electrode during operation of the semiconductor light emitting element, resulting in deterioration of light emitting efficiency.

In order to solve this problem, therefore, a p-type ZnSe / ZnTe multiple quantum well (MQW) layer is grown on the p-type ZnSe contact layer, and a p-type ZnSe / ZnTe multiple quantum well layer is easily formed on the p-type ZnSe contact layer. Type ZnTe
A technique has been proposed in which a contact layer is grown and a p-side electrode is formed on the contact layer, and a semiconductor laser having this structure has already succeeded in continuous oscillation at room temperature (for example, Jpn.
J. Appl. Phys. 33 (1994) p.L938).

[0007]

However, when the p-type ZnSe / ZnTe MQW layer as described above is used, this p-type ZnSe layer is used from the viewpoint of preventing the occurrence of crystal defects.
Since the thickness of the Se / ZnTe MQW layer needs to be set strictly within the critical film thickness, strict control of the thickness is required, which causes a disadvantage in manufacturing the semiconductor light emitting device.

Further, during operation of the semiconductor light emitting device using the p-type ZnSe / ZnTe MQW layer, there is a problem that a large voltage drop occurs in this p-type ZnSe / ZnTe MQW layer and heat is generated in this portion. This has been a cause of deterioration in the reliability of the side electrode contact portion, and by extension, the semiconductor light emitting device. In addition, this p-type Zn
The occurrence of a large voltage drop in the Se / ZnTe MQW layer was also a major cause of increasing the operating voltage of the semiconductor light emitting device.

Therefore, an object of the present invention is to eliminate the use of a multiple quantum well layer in the electrode contact portion, which results in a low operating voltage, high reliability, long life and easy manufacture.
It is to provide a semiconductor light emitting device using a group I-VI compound semiconductor.

[0010]

To achieve the above object, the present invention comprises a plurality of at least a first conductivity type first cladding layer, an active layer and a second conductivity type second cladding layer. The II-VI group compound semiconductor layer is stacked on the semiconductor substrate, and the plurality of II-VI group compound semiconductor layers are Zn,
At least one group II element selected from the group consisting of Cd, Mg, Hg and Be, and S, Se and Te
A semiconductor light emitting device comprising at least one or more VI group elements selected from the group consisting of
The terminal layer of the Group VI compound semiconductor layers is grown by a vapor phase growth method using an organometallic compound as a raw material or a vapor phase growth method using an organometallic compound as a raw material and using a hydrogen atmosphere. It is characterized by.

Here, the "terminal layer" means the uppermost layer or the lowermost layer.

In the present invention, the terminal layer is, for example, a ZnSe layer, a Zn _p Cd _1-p Se layer (where 0 ≦
p ≦ 1), Zn _p Cd _1-p Se _q Te _1-q layer (however,
0 ≦ p ≦ 1 and 0 ≦ q ≦ 1).

In the present invention, the vapor phase growth method using an organometallic compound as a raw material includes metalorganic chemical vapor deposition (MO
CVD) and metalorganic molecular beam epitaxy (MOMB)
E) method is included.

In the present invention, the terminal layer is Zn
In the case of the Se layer, for example, at least the first clad layer, the active layer, and the second clad layer are grown by a vapor phase growth method that does not use an organometallic compound as a raw material, and ZnSe forming the terminal layer is used. The layer is grown by a vapor phase growth method using an organic metal compound containing Zn and an organic metal compound containing Se or an inorganic metal compound as a raw material.

In one embodiment of the invention where the terminal layer is a ZnSe layer, at least the first
The clad layer, the active layer and the second clad layer are grown by a molecular beam epitaxy method, and the ZnSe layer forming the terminal layer is an organometallic compound containing Zn and an organometallic compound or inorganic metal compound containing Se. It was grown by a metal organic chemical vapor deposition method using as a raw material.

In another embodiment of the present invention in which the terminal layer is a ZnSe layer, at least the first cladding layer, the active layer and the second cladding layer are grown by molecular beam epitaxy. The ZnSe layer forming the terminal layer is grown by the organometallic molecular beam epitaxy method using an organometallic compound containing Zn and an organometallic compound containing Se or an inorganic metal compound as a raw material.

In still another embodiment of the present invention in which the terminal layer is a ZnSe layer, for example, at least the first cladding layer, the active layer and the second cladding layer are grown by metalorganic molecular beam epitaxy. The ZnSe layer constituting the terminal layer is grown by the metal organic chemical vapor deposition method using the organometallic compound containing Zn and the organometallic compound containing Se or the inorganic metal compound as a raw material. .

In an exemplary embodiment of the invention where the terminal layer is a ZnSe layer, the semiconductor substrate is n-type and the terminal layer comprises p, which constitutes the top layer.
Type ZnSe layer, and at least the n-type first clad layer, the active layer and the p-type second clad layer are grown by the molecular beam epitaxy method.
The layer is grown by metalorganic chemical vapor deposition or metalorganic molecular beam epitaxy.

In the present invention, the terminal layer is Zn
_{In the case of the p} Cd _1-p Se layer, for example, at least the first
The clad layer, the active layer and the second clad layer were grown by a vapor phase growth method using no organometallic compound as a raw material, and Zn _p Cd _1-p S constituting the terminal layer was formed.
The e layer is grown by a vapor phase growth method using an organometallic compound containing Zn, an organometallic compound containing Cd and an organometallic compound containing Se or an inorganic metal compound as a raw material.

In one embodiment of the invention where the terminal layer is a Zn _p Cd _1-p Se layer, at least the first cladding layer, the active layer and the second cladding layer are grown by molecular beam epitaxy. The Zn _p Cd _1-p Se layer forming the terminal layer is Z
It was grown by an organometallic chemical vapor deposition method using an organometallic compound containing n, an organometallic compound containing Cd and an organometallic compound containing Se or an inorganic metal compound as a raw material.

In another embodiment of the invention where the terminal layer is a Zn _p Cd _1-p Se layer,
At least the first cladding layer, the active layer, and the second cladding layer are grown by the molecular beam epitaxy method, and the Zn _p Cd _1-p Se layer forming the terminal layer is an organometallic compound containing Zn, Cd. It is grown by an organometallic molecular beam epitaxy method using as a raw material an organometallic compound containing Si and an organometallic compound containing Se or an inorganic metal compound.

In still another embodiment of the present invention in which the terminal layer is a Zn _p Cd _1-p Se layer, at least the first cladding layer, the active layer and the second layer.
The clad layer of was grown by the metalorganic molecular beam epitaxy method, and the Zn _p C forming the terminal layer was formed.
The d _{1 -p} Se layer is grown by a metal organic chemical vapor deposition method using an organometallic compound containing Zn, an organometallic compound containing Cd, and an organometallic compound containing Se or an inorganic metal compound as a raw material. .

In an exemplary embodiment of the invention where the terminal layer is a Zn _p Cd _1-p Se layer, the semiconductor substrate is n-type and the terminal layer is p-type Zn _p, which constitutes the top layer. Cd _1-p Se layer, at least the n-type first clad layer, the active layer, and the p-type second clad layer are grown by the molecular beam epitaxy method, and p-type Zn _p Cd _{1- The p} Se layer is grown by a metal organic chemical vapor deposition method or a metal organic molecular beam epitaxy method.

In the present invention, the terminal layer is Zn
_{In the case of p} Cd _1-p Se _q Te _1-q layer, for example, at least the first clad layer, the active layer and the second clad layer were grown by a vapor phase growth method using no organometallic compound as a raw material. Zn _p that constitutes the terminal layer
The Cd _1-p Se _q Te _1-q layer is made of an organometallic compound containing Zn, an organometallic compound containing Cd, an organometallic compound containing Se, or an inorganic metallic compound, and an organometallic compound containing Te or an inorganic metallic compound. It was grown by the vapor phase growth method used.

The terminal layer is Zn _p Cd _1-p Se _q Te
_In one embodiment of the present invention in the case of a _1-q layer, at least the first cladding layer, the active layer and the second
Was grown by the molecular beam epitaxy method, and the Zn _p Cd _1-p S constituting the terminal layer was formed.
The e _q Te _1-q layer is an organometallic compound containing Zn, an organometallic compound containing Cd, an organometallic compound containing Se, or an inorganic metal compound, and an organometallic compound containing Te or an inorganic metal compound as a raw material. It was grown by the chemical vapor deposition method.

The terminal layer is Zn _p Cd _1-p Se _q Te
_In another embodiment of the present invention in the case of a _1-q layer, at least the first cladding layer, the active layer and the second cladding layer are grown by molecular beam epitaxy, and the terminal layer is Constituting Zn _p Cd
_1-p Se _q Te _1-q layer is an organometallic compound containing Zn, C
It was grown by an organometallic molecular beam epitaxy method using an organometallic compound containing d, an organometallic compound containing Se or an inorganic metallic compound and an organometallic compound containing Te or an inorganic metallic compound as a raw material.

The terminal layer is Zn _p Cd _1-p Se _q Te
_In still another embodiment of the present invention in the case of a _1-q layer, at least the first cladding layer, the active layer and the second cladding layer are grown by metalorganic molecular beam epitaxy, The Zn _p Cd _1-p Se _q Te _1-q layer constituting the terminal layer is an organometallic compound containing Zn, an organometallic compound containing Cd, an organometallic compound containing Se or an inorganic metal compound and an organometallic compound containing Te. Alternatively, it is grown by an organometallic chemical vapor deposition method using an inorganic metal compound as a raw material.

The terminal layer is Zn _p Cd _1-p Se _q Te
_In an exemplary embodiment of the invention in the case of a _1-q layer, the semiconductor substrate is n-type and the terminal layer is the p-type Zn _p Cd _1-p Se _q Te _1-q constituting the top layer.
At least the n-type first clad layer, the active layer, and the p-type second clad layer are grown by the molecular beam epitaxy method, and p-type Zn _p Cd _1-p Se
_The qTe1 _-q layer is grown by metalorganic chemical vapor deposition or metalorganic molecular beam epitaxy.

In the present invention, the first cladding layer and the second cladding layer are ZnMgSSe layer and ZnCdM.
Examples thereof include a gSe layer and a ZnCdMgSeTe layer. Here, the first cladding layer and the second cladding layer are ZnM.
In the case of a gSSe layer, for example, G is used as a semiconductor substrate.
An aAs substrate or a ZnSe substrate is used, where the terminal layer is typically a ZnSe layer. Also, the first
Of the clad layer and the second clad layer of ZnCdMgS
In the case of the e layer, an InP substrate or an InGaAs substrate is used as the semiconductor substrate, and the terminal layer is typically a Zn _p Cd _1-p Se layer. Further, the first clad layer and the second clad layer are made of ZnC.
In the case of a dMgSeTe layer, for example, an InAs substrate, a CdSe substrate, a GaSb substrate or a ZnTe substrate is used as the semiconductor substrate, and the terminal layer is typically a Zn _p Cd _1-p Se _q Te _1-q layer. is there.

Here, for reference, a representative binary I
FIG. 1 shows the relationship between the energy gap and the lattice constant of a typical binary III-V compound semiconductor used for the I-VI group compound semiconductor and the substrate material. As can be seen from FIG. 1, the first cladding layer and the second cladding layer are ZnMgSSe layers, and the semiconductor substrate is, for example, GaAs.
ZnMgSSe if the substrate or ZnSe substrate
The layer can be lattice matched to a GaAs or ZnSe substrate, the first and second cladding layers are ZnCdMgSe layers and the semiconductor substrate is In.
ZnCd in case of P substrate or InGaAs substrate
The MgSe layer can be lattice-matched with an InP substrate or an InGaAs substrate, the first cladding layer and the second cladding layer are ZnCdMgSeTe layers, and the semiconductor substrate is an InAs substrate, a CdSe substrate, a GaSb substrate, or a ZnTe substrate. In some cases ZnCdMgSeTe
The layers can be lattice matched to InAs, CdSe, GaSb or ZnTe substrates.

In the present invention constructed as described above, a terminal grown by a vapor phase growth method using an organic metal compound as a raw material or a vapor phase growth method using an organic metal compound as a raw material and using a hydrogen atmosphere. II-VI which is a layer
The height of the Schottky barrier formed at the interface of the group-II compound semiconductor layer when an electrode is brought into contact with the group II-VI compound semiconductor layer is II-VI compound semiconductor grown by the molecular beam epitaxy method. Compared with the case where an electrode is brought into contact with the layer, the number is reduced, and good contact characteristics closer to ohmic contact can be obtained. Therefore, the current-voltage characteristic of the semiconductor light emitting device becomes good. Further, since the voltage drop in the electrode contact portion is reduced, the operating voltage of the semiconductor light emitting element can be reduced, and thus heat generation in the electrode contact portion can be suppressed, so that the deterioration of the light emitting efficiency and the deterioration of the element itself can be prevented. Can be prevented. Further, in this case, since the multiple quantum well layer is not used for the electrode contact portion, the semiconductor light emitting device can be easily manufactured, and there is no voltage drop in the multiple quantum well layer.

[0032]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 2 shows a semiconductor laser according to the first embodiment of the present invention. This semiconductor laser has a so-called SCH (Separate Confinement Heterostructure) structure.

In the method of manufacturing the semiconductor laser according to the first embodiment, as shown in FIG. 2, first, for example, an n-type GaAs substrate having a (100) plane orientation and doped with, for example, silicon (Si) as a donor impurity. An n-type GaAs buffer layer 2 doped with, for example, Si as a donor impurity is grown on the substrate 1 by a molecular beam epitaxy (MBE) method. The n-type GaAs buffer layer 2 has a thickness of 250 nm, for example. This n-type GaAs buffer layer 2 is grown by using M for growing a III-V group compound semiconductor.
A BE device is used.

Next, the n-type GaAs substrate 1 on which the n-type GaAs buffer layer 2 is grown is transferred from the above-mentioned MBE apparatus for growing a III-V compound semiconductor to a II-VI group compound semiconductor via a vacuum transfer path. Transport to MBE equipment for growth. Then, the M for growing the II-VI group compound semiconductor
In the BE device, n-type GaAs buffer layer 2 is doped with, for example, chlorine (Cl) as a donor impurity.
Type ZnSe buffer layer 3, for example, C as a donor impurity
n-type Zn _1-p Mg _p S _q Se _1-q / Z doped with l
nSe superlattice cladding layer 4, n-type ZnS _y Se _1-y optical waveguide layer 5 doped with Cl as a donor impurity,
For example, an active layer 6 having a single quantum well structure or a multiple quantum well structure having a Zn _1-x Cd _x Se layer as a quantum well, and p-type Z doped with, for example, nitrogen (N) as an acceptor impurity.
nS _y Se _1-y optical waveguide layer 7, p-type Zn _1-p Mg _p S _q Se _1-q doped with, for example, N as an acceptor impurity
/ ZnSe superlattice clad layer 8 and p-type ZnS _v Se _1-v layer 9 doped with N as an acceptor impurity, for example, are sequentially grown.

In the growth of the II-VI group compound semiconductor layer by the MBE method, for example, Zn having a purity of 99.9999% is used as the Zn raw material, and the purity of 9 is used as the Mg raw material.
9.9% Mg was used, and the purity was 99.99 as the Cd raw material.
99% Cd is used and the purity of the raw material is 99.9999 as S raw material.
% ZnS is used, and the purity of the raw material for Se is 99.9999.
% Se is used. In addition, the n-type ZnSe buffer layer 3,
Doping with Cl as a donor impurity of the n-type Zn _1-p Mg _{p Sq} Se _1-q / ZnSe superlattice cladding layer 4 and the n-type ZnS _y Se _1-y optical waveguide layer 5 has, for example, a purity of 9 or less.
Performed using 9.9999% ZnCl ₂ as a dopant. On the other hand, p-type ZnS _y Se _1-y optical waveguide layer 7, p-type Z
Doping of N _1-p Mg _p S _q Se _1-q / ZnSe superlattice cladding layer 8 and p-type ZnS _v Se _1-v layer 9 as an acceptor impurity is performed by electron cyclotron resonance (ECR) or high frequency plasma. It is performed by irradiating with N ₂ plasma generated by the cell.

Here, the thickness of each II-VI group compound semiconductor layer is, for example, 33 n for the n-type ZnSe buffer layer 3.
m, n-type Zn _1-p Mg _{p Sq} Se _1-q / ZnSe superlattice cladding layer 4 has a thickness of 700 nm, n-type ZnS _y Se _1-y optical waveguide layer 5 has a thickness of 100 nm, and active layer 6 has Zn _{1- x} Cd
_{The x} Se layer has a thickness of 6 to 12 nm, for example 7 nm, and p-type ZnS _y
Se _1-y optical waveguide layer 7 is 100 nm, p-type Zn _1-p Mg _p
The S _q Se _1-q / ZnSe superlattice cladding layer 8 is 500 n
The m, p-type ZnS _v Se _1-v layer 9 has a thickness of 500 nm.

The S composition ratio y in the n-type ZnS _y Se _1-y optical waveguide layer 5 and the p-type ZnS _y Se _1-y optical waveguide layer 7 is, for example, 0.06, and Zn _1- constituting the active layer 6 is formed. _x Cd
The Cd composition ratio x in the _x Se layer is, for example, 0.15.

Next, on the p-type ZnS _v Se _1-v layer 9, a p-type ZnSe layer 10 and a p-type ZnSe contact doped with, for example, N as an acceptor impurity by a metal organic chemical vapor deposition (MOCVD) method. Layer 11 is grown in sequence. In the growth of the p-type ZnSe layer 10 and the p-type ZnSe contact layer 11 by this MOCVD method, Z
n raw material such as dimethyl zinc (DMZn) or diethyl zinc (DEZn), and Se raw material such as dimethyl selenium (DMSe) or diethyl selenium (DES)
e), for example, diisopropylamine (Di-PNH) is used as a dopant of N as an acceptor impurity. The thickness of the p-type ZnSe layer 10 is 100 n, for example.
The thickness of the m, p-type ZnSe contact layer 11 is, for example, 70
nm.

Next, after forming a stripe-shaped resist pattern (not shown) having a predetermined width on the p-type ZnSe contact layer 11, the resist pattern is used as a mask to form the p-type ZnS _v Se _1-v layer 9. Etching is performed by a wet etching method in the middle of the thickness direction. As a result, the upper layer portion of the p _- type ZnS _v Se _1-v layer 9 and the p-type ZnSe
The layer 10 and the p-type ZnSe contact layer 11 are patterned in a stripe shape.

Next, while leaving the resist pattern used for the above-mentioned etching, A is formed on the entire surface by, for example, a vacuum evaporation method.
After forming the l ₂ O ₃ film, this resist pattern is removed together with the Al ₂ O ₃ film formed thereon (lift-off). As a result, the insulating layer 12 made of the Al ₂ O ₃ film is formed only on the p-type ZnS _v Se _1-v layer 9 other than the stripe portion. The insulating layer 12 may be made of polyimide, for example.

Next, for example, a Pd film is formed on the entire surfaces of the stripe-shaped p-type ZnSe contact layer 11 and the insulating layer 12.
A Pt film and an Au film are sequentially formed by, for example, a vacuum vapor deposition method or a sputtering method to form a p-side electrode 13 made of a Pd / Pt / Au electrode. Thereafter, if necessary, heat treatment for making ohmic contact with the p-side electrode 13 is performed. On the other hand, an n-side electrode 14 such as an In electrode is brought into ohmic contact with the back surface of the n-type GaAs substrate 1.

Next, the n-type GaAs substrate 1 on which the laser structure is formed as described above is cleaved into a bar shape to form both resonator end faces, and further, end face coating is applied, if necessary. Cleave the bar to make chips. Then, the laser chip thus obtained is mounted on a heat sink so that the p-side electrode 13 is on the lower side (p-side down), and packaging is performed.

As a result, the desired semiconductor laser is manufactured.

Here, in this semiconductor laser,
(Energy gap of Zn _1-x Cd _x Se layer constituting active layer 6) <(Energy gap of n-type ZnS _y Se _1-y optical waveguide layer 5 and p-type ZnS _y Se _1-y optical waveguide layer 7) <(N-type Zn _1-p Mg _p S _q Se _1-q / ZnSe superlattice cladding layer 4 and p-type Zn _1-p Mg _p S _q Se
_1-q / ZnSe superlattice cladding layer 8 energy gap) and (p-type ZnS _v Se _1-v layer 9 energy gap) <(n-type Zn _1-p Mg _p S _q Se _1-q
/ ZnSe superlattice cladding layer 4 and p-type Zn _1-p Mg
The composition of each layer is selected so that the relationship of _p S _q Se _1-q / ZnSe superlattice cladding layer 8) is satisfied.

As described above, according to the first embodiment, the terminal layer (in this case, the uppermost layer) of the II-VI group compound semiconductor layers laminated on the n-type GaAs substrate 1 is p. Type ZnSe contact layer 11 by MOCVD
Since it is grown by the method, the height of the Schottky barrier formed at the interface between the p-type ZnSe contact layer 11 and the p-side electrode 13 formed thereon is higher than the p-type ZnSe contact layer 11.
It is reduced as compared with the case where the Se contact layer 11 is conventionally grown by the MBE method. Therefore, the current-voltage characteristic of the semiconductor laser according to the first embodiment becomes better than that of the conventional one.

FIG. 3 shows the p-type ZnSe layer 10 and the p-type Z
The semiconductor laser according to the first embodiment in which the nSe contact layer 11 is grown by the MOCVD method (however,
growing the p-type ZnSe layer 10 and then interrupting the growth,
After that, the p-type ZnSe contact layer 11 was grown), and the current-voltage characteristics (curve indicated by ⋄ in FIG. 3), p-type ZnS
A semiconductor laser similar to that of the first embodiment except that the e layer 10 is grown by the MBE method and the p-type ZnSe contact layer 11 is grown by the MOCVD method (however, the p-type ZnSe layer 10 is grown by Growth of the p-type ZnSe contact layer 11 was performed, and the current-voltage characteristics (curve indicated by □ in FIG. 3) of the p-type ZnSe contact layer 11 and the p-type ZnSe contact layer 11 were grown. Current-voltage characteristics of a semiconductor laser similar to that of the first embodiment except that the growth was sequentially performed by the MBE method without interruption (curve indicated by ◯ in FIG. 3).
The measurement result of is shown. As is apparent from FIG. 3, the current-voltage characteristics are obtained by MOCVD of the p-type ZnSe layer 10 and the p-type ZnSe contact layer 11.
The semiconductor laser according to the embodiment of
Of the p-type ZnSe layer 10 is grown by the MBE method.
The semiconductor laser obtained by growing the Se contact layer 11 by the MOCVD method is the next best, and the p-type ZnSe layer 10 is obtained.
And the semiconductor laser in which the p-type ZnSe contact layer 11 is grown by the MBE method is the worst. In the semiconductor laser according to the first embodiment, the applied voltage required to flow the same current is greatly reduced as compared with the other two semiconductor lasers. That is, according to the first embodiment, it is possible to significantly reduce the operating voltage of the semiconductor laser.

Since the voltage drop at the contact portion between the p-side electrode 13 and the p-type ZnSe contact layer 11 is small, heat generation at this electrode contact portion during operation of the semiconductor laser can be reduced. This makes it possible to prevent the deterioration of the luminous efficiency of the semiconductor laser and the deterioration of the device itself.

Since the laser chip is mounted on the heat sink with the p-side electrode 13 side, which is apt to generate heat, facing downward, heat generated during the operation of the semiconductor laser can be effectively diffused to the heat sink. Therefore, the temperature rise of the semiconductor laser can be effectively suppressed.

Furthermore, the effective acceptor concentration of the p-type ZnSe contact layer 11 is set to about 10 ¹⁸ cm ^-3 by high-concentration N, so that the p-type ZnSe contact near the interface with the p-side electrode 13 is formed. Since the width of the depletion layer formed in the layer 11 can be reduced, this can also improve the current-voltage characteristics of the semiconductor laser.

Further, in the semiconductor laser according to the first embodiment, since the p-type ZnSe / ZnTe MQW layer is not used for the contact portion of the p-side electrode 13 as in the conventional case, it is easy to manufacture.

As described above, it is possible to realize a semiconductor laser having good current-voltage characteristics, low operating voltage, high reliability, long life, and easy to manufacture, which can emit green or blue light.

Such a semiconductor laser capable of emitting green or blue light can be used alone or in combination with a semiconductor laser capable of emitting red light to form RGB three primary colors.
It is possible to realize a color display using a semiconductor laser as a light source.

FIG. 4 shows a semiconductor laser according to the second embodiment of the present invention. This semiconductor laser also has an SCH structure.

In the method of manufacturing a semiconductor laser according to the second embodiment, as shown in FIG. 4, first, an n-type InP substrate 21 having, for example, a (100) plane orientation doped with Si or Se as a donor impurity is first prepared. The n-type InP buffer layer 22 doped with Si or Se as a donor impurity and the n-type In doped with Si or Se as a donor impurity by the MBE method.
The GaAs buffer layer 23 is sequentially grown. These n
An MBE apparatus for growing a III-V group compound semiconductor is used to grow the n-type InP buffer layer 22 and the n-type InGaAs buffer layer 23.

Next, these n-type InP buffer layers 22 are formed.
And n on which the n-type InGaAs buffer layer 23 is grown
The type InP substrate 21 is moved from the above MBE apparatus for growing a III-V compound semiconductor to a II-VI via a vacuum transfer path.
It is transported to an MBE device for growing a group compound semiconductor. Then, in this MBE device for growing II-VI group compound semiconductor, n-type Zn _x1 C doped with, for example, Cl as a donor impurity on the n-type InGaAs buffer layer 23.
d _y1 Mg _1-x1-y1 Se cladding layer 24, n-type Zn _x2 Cd _y2 Mg doped with, for example, Cl as a donor impurity
_1-x2-y2 Se optical waveguide layer 25, for example Zn _x3 Cd _y3 Mg
An active layer 26 having a single quantum well structure or a multiple quantum well structure having a _1-x3-y3 Se layer as a quantum well, and p-type Zn _x2 Cd _y2 Mg doped with N as an acceptor impurity, for example.
_1-x2-y2 Se optical waveguide layer 27, p-type Zn _x1 Cd _y1 Mg _1-x1-y1 S doped with N as an acceptor impurity, for example
An e-clad layer 28 and a p-type Zn _x4 Cd _y4 Mg _1-x4-y4 Se layer 29 doped with N as an acceptor impurity are sequentially grown.

In the growth of the II-VI group compound semiconductor layer by the MBE method, the same Zn raw material, Mg raw material, Cd raw material, and Se raw material are used as in the first embodiment. In addition, the n-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se cladding layer 24 and the n-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se
Doping of Cl as a donor impurity of the optical waveguide layer 25, the p-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se optical waveguide layer 27, the p-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se cladding layer 28, and Doping with N as an acceptor impurity in the p-type Zn _x4 Cd _y4 Mg _1-x4-y4 Se layer 29 is also performed in the same manner as in the first embodiment.

Next, p-type Zn _x4 Cd _y4 Mg _1-x4-y4 Se
On layer 29 by MOCVD, the p-type _{Zn p 'Cd 1-p'} Se layer 30, for example N doped as an acceptor impurity (where, 0 ≦ p'≦ 1) and a p-type Zn _p Cd
_{The 1-p} Se contact layer 31 (where 0 ≦ p ≦ 1) is sequentially grown. P-type Zn _p 'Cd by the MOCVD method
_In the growth of the _{1-p ′} Se layer 30 and the p-type Zn _p Cd _1-p Se contact layer 31, the Zn source, the Se source, and the N dopant as an acceptor impurity are the first dopants.
The same material as in the above embodiment is used, and dimethyl cadmium (DMCd) or diethyl cadmium (DECd) is used as the Cd raw material.

Then, similarly to the first embodiment, the upper layer portion of the p _- type Zn _x4 Cd _y4 Mg _1-x4-y4 Se layer 29, the p-type Z.
_{n p 'Cd 1-p'} Se layer 30 and the p-type Zn _p Cd _1-p Se
The contact layer 31 is patterned into a stripe shape.

Then, similarly to the first embodiment, p-type Zn _x4 Cd _y4 Mg _1-x4-y4 S in the portion other than the stripe portion is formed.
The insulating layer 32 is formed only on the e layer 29.

Then, similarly to the first embodiment, the p-type Zn _p Cd _1-p Se contact layer 31 and the insulating layer 32 are formed.
The p-side electrode 33 is formed on the entire surface of the n-type InP
The n-side electrode 34 is formed on the back surface of the substrate 21.

Next, after the n-type InP substrate 21 having the laser structure formed thereon is made into chips as described above, the laser chip thus obtained is arranged so that the p-side electrode 33 is on the lower side. Mount on heat sink and package.

Through the above steps, the desired semiconductor laser is manufactured.

Here, in this semiconductor laser,
(Zn _x3 Cd _y3 Mg _1-x3-y3 Se forming the active layer 26
Layer energy gap) <(n-type Zn _x2 Cd _y2 Mg
_1-x2-y2 Se optical waveguide layer 25 and p-type Zn _x2 Cd _y2 Mg
Energy gap of _1-x2-y2 Se optical waveguide layer 27) <
(N-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se clad layer 24 and p-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se clad layer 28
Energy gap) and (p-type Zn _x4 C
d _y4 Mg _1-x4-y4 Se layer 29 energy gap) <
(N-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se clad layer 24 and p-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se clad layer 28
The composition of each layer is selected so as to satisfy the relationship of (energy gap).

As described above, according to this second embodiment, the terminal layer (in this case, the uppermost layer) of the II-VI group compound semiconductor layers laminated on the n-type InP substrate 21 is p. Since the _p- type Zn _p Cd _1-p Se contact layer 31 is grown by the MOCVD method, the p-type Zn p
The height of the Schottky barrier formed at the interface between the _p Cd _1-p Se contact layer 31 and the p-side electrode 33 formed thereon is determined by the p-type Zn _p Cd _1-p Se contact layer 31.
Is decreased as compared with the case of growing by the MBE method. Therefore, the semiconductor laser according to the second embodiment has good current-voltage characteristics. Further, it is possible to reduce the operating voltage of the semiconductor laser.

In addition, the p-side electrode 33 and the p-type Zn _p Cd _1-p
Since the voltage drop at the contact portion with the Se contact layer 31 is small, it is possible to reduce heat generation at this electrode contact portion during operation of the semiconductor laser. This makes it possible to prevent the deterioration of the luminous efficiency of the semiconductor laser and the deterioration of the device itself.

Since the laser chip is mounted on the heat sink with the p-side electrode 33 side, which is apt to generate heat, facing downward, the heat generated during the operation of the semiconductor laser can be effectively diffused to the heat sink. Therefore, the temperature rise of the semiconductor laser can be effectively suppressed.

Furthermore, the effective acceptor concentration of the p-type Zn _p Cd _1-p Se contact layer 31 is set to about 10 ¹⁸ cm ^-3 by high-concentration N, so that the interface with the p-side electrode 33 is reduced. P-type Zn _p C in the vicinity
Since the width of the depletion layer formed in the d _{1 -p} Se contact layer 31 can be reduced, this can also improve the current-voltage characteristics of the semiconductor laser.

Further, in the semiconductor laser according to the second embodiment, MQ is formed in the contact portion of the p-side electrode 33.
Since the W layer is not used, the manufacturing is easy.

As described above, it is possible to realize a semiconductor laser having good current-voltage characteristics, low operating voltage, high reliability, long life, and easy to manufacture and capable of emitting light in the yellow-green or vacuum ultraviolet region.

FIG. 5 shows a semiconductor laser according to the third embodiment of the present invention. This semiconductor laser also has an SCH structure.

In the method of manufacturing a semiconductor laser according to the third embodiment, as shown in FIG. 5, first, an n-type InAs substrate 41 having a (100) plane orientation, for example, doped with Si or Se as a donor impurity. On the MBE
Method, the n-type InAs buffer layer 42 doped with Si or Se as a donor impurity is grown. To grow the n-type InAs buffer layer 42, II
An MBE apparatus for growing a IV compound semiconductor is used.

Next, the n-type InAs substrate 41 having the n-type InAs buffer layer 42 grown thereon is treated with the above-mentioned III-V.
The MBE apparatus for growing a group compound semiconductor is transferred to the MBE apparatus for growing a II-VI group compound semiconductor through a vacuum transfer path. Then, in this MBE device for growing a II-VI group compound semiconductor, an n-type CdSe buffer layer 43 doped with Cl as a donor impurity, for example, C as a donor impurity, is provided on the n-type InAs buffer layer 42.
n-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se _z1 doped with l
Te _{1-z 1} clad layer 44, for example, C as a donor impurity
n-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se _z2 doped with l
Te _1-z2 optical waveguide layer 45, for example Zn _x3 Cd _y3 Mg
_1-x3-y3 Se _z3 Te _1-z3 active layer 46 having a single quantum well structure or a multiple quantum well structure using quantum wells, and p-type Zn _x2 Cd doped with N as an acceptor impurity
_y2 Mg _1-x2-y2 Se _z2 Te _1-z2 optical waveguide layer 47, p-type Zn _x1 Cd doped with N as an acceptor impurity, for example
_y1 Mg _1-x1-y1 Se _z1 Te _1-z1 p-type Zn doped with clad layer 48 and N as an acceptor impurity, for example
_{The x4} Cd _y4 Mg _1-x4-y4 Se _z4 Te _1-z4 layer 49 is sequentially grown.

In the growth of the II-VI group compound semiconductor layer by the MBE method, the same Zn raw material, Mg raw material, Cd raw material, and Se raw material as in the first embodiment are used, and the Te raw material has, for example, a purity of 99. Use 0.0099% Te. In addition, n-type Zn _x1 Cd _y1 Mg _1-x1-y1 S
e _z1 Te _1-z1 clad layer 44 and n-type Zn _x2 Cd _y2 M
g _1-x2-y2 Se _z2 Te _1-z2 Doping with Cl as a donor impurity of the optical waveguide layer 45 and p-type Zn _x2 Cd _y2 Mg
_1-x2-y2 Se _z2 Te _1-z2 optical waveguide layer 47, p-type Zn _x1 Cd
_y1 Mg _1-x1-y1 Se _z1 Te _1-z1 clad layer 48 and p
Doping with N as an acceptor impurity in the type Zn _x4 Cd _y4 Mg _1-x4-y4 Se _z4 Te _1-z4 layer 49 is also performed in the same manner as in the first embodiment.

Next, p-type Zn _x4 Cd _y4 Mg _1-x4-y4 Se
On _z4 Te _1-z4 layer 49 by MOCVD, p-type for example N doped as an acceptor impurity Zn _p 'Cd
_{1-p 'Se q' Te} 1-q ' layer 50 (where, 0 ≦ p'≦ 1 and 0 ≦ q'≦ 1) and a p-type _{Zn p Cd 1-p Se q} Te
_1-q contact layer 51 (where 0 ≦ p ≦ 1 and 0 ≦ q
≦ 1) is grown sequentially. P-type _{Zn p 'Cd 1-p'} Se q 'Te 1-q' layer 50 and the p-type Zn _p by the MOCVD method
In the growth of the Cd _1-p Se _q Te _1-q contact layer 51, the same Zn raw material, Cd raw material, Se raw material and N dopant as an acceptor impurity are used as in the first embodiment. For example, dimethyl tellurium (DMTe) or diethyl tellurium (DETe) is used.

Next, as in the first embodiment, the upper portion of the p-type _{Zn x4 Cd y4 Mg 1-x4} -y4 Se z4 Te 1-z4 layer 49, p-type Zn _p 'Cd _1-p' Se _{q 'Te 1-q'} layer 50 and p
The type Zn _p Cd _1-p Se _q Te _1-q contact layer 51 is patterned into a stripe shape.

Then, similarly to the first embodiment, p-type Zn _x4 Cd _y4 Mg _1-x4-y4 S in the portion other than the stripe portion is formed.
The insulating layer 52 is formed only on the e _z4 Te _{1 -z 4} layer 49.

Then, similarly to the first embodiment, the p-side electrode 53 is formed on the entire surface of the p _- type Zn _p Cd _1-p Se _q Te _1-q contact layer 51 and the insulating layer 52, and
An n-side electrode 54 is formed on the back surface of the n-type InAs substrate 41.

Next, after the n-type InAs substrate 41 having the laser structure formed thereon as described above is made into a chip, the laser chip thus obtained is arranged so that the p-side electrode 53 is on the lower side. Mount on heat sink and package.

As described above, the desired semiconductor laser is manufactured.

Here, in this semiconductor laser,
(Zn _x3 Cd _y3 Mg _1-x3-y3 Se forming the active layer 46
_z3 Te _1-z3 layer energy gap) <(n-type Zn _x2 C
d _y2 Mg _1-x2-y2 Se _z2 Te _1-z2 optical waveguide layer 45 and p
Type Zn _x2 Cd _y2 Mg _1-x2-y2 Se _z2 Te _1-z2 optical waveguide layer 4
7 energy gap) <(n-type Zn _x1 Cd _y1 Mg
_1-x1-y1 Se _z1 Te _1-z1 clad layer 44 and p-type Zn
_x1 Cd _y1 Mg _1-x1-y1 Se _z1 Te _1-z1 energy gap of the cladding layer 48 and (p-type Zn _x4 Cd
energy gap of _y4 Mg _1-x4-y4 Se _z4 Te _1-z4 layer 49) <(n-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se _z1 Te
_1-z1 clad layer 44 and p-type Zn _x1 Cd _y1 Mg
The composition of each layer is selected so that the relationship of _1-x1-y1 Se _z1 Te _1-z1 clad layer 48) is satisfied.

As described above, according to the third embodiment, p which is the terminal layer (in this case, the uppermost layer) of the II-VI group compound semiconductor layers stacked on the n-type InAs substrate 41 is used. Since the _p- type Zn _p Cd _1-p Se _q Te _1-q contact layer 51 is grown by the MOCVD method, this p-type Zn _p Cd _1-p Se _q Te _1-q contact layer 51 is formed.
The height of the Schottky barrier formed at the interface between the p-type electrode and the p-side electrode 53 formed thereon is such that the p-type Zn _p Cd _1-p
The amount is smaller than that in the case where the Se _q Te _1-q contact layer 51 is grown by the MBE method. Therefore, the semiconductor laser according to the third embodiment has good current-voltage characteristics. And according to this third embodiment,
It is possible to reduce the operating voltage of the semiconductor laser.

In addition, the p-side electrode 53 and the p-type Zn _p Cd _1-p
Since the voltage drop at the contact portion with the Se _q Te _1-q contact layer 51 is small, it is possible to reduce heat generation at this electrode contact portion during operation of the semiconductor laser. This makes it possible to prevent the deterioration of the luminous efficiency of the semiconductor laser and the deterioration of the device itself.

Further, since the laser chip is mounted on the heat sink with the p-side electrode 53 side, which is apt to generate heat, facing downward, the heat generated during the operation of the semiconductor laser can be effectively diffused to the heat sink. Therefore, the temperature rise of the semiconductor laser can be effectively suppressed.

Furthermore, the p-side electrode is formed by setting the effective acceptor concentration of the p-type Zn _p Cd _1-p Se _q Te _1-q contact layer 51 to about 10 ¹⁸ cm ^-3 by highly doping N. Since the width of the depletion layer formed in the p-type Zn _p Cd _1-p Se _q Te _1-q contact layer 51 in the vicinity of the interface with 53 can be reduced, this also allows the current-voltage of the semiconductor laser to be increased. It is possible to improve the characteristics.

Further, in the semiconductor laser according to the third embodiment, the MQ portion is formed on the contact portion of the p-side electrode 53.
Since the W layer is not used, the manufacturing is easy.

As described above, it is possible to realize a semiconductor laser which has good current-voltage characteristics, low operating voltage, high reliability, long life and is easy to manufacture and which can emit light in the red or vacuum ultraviolet region.

The embodiments of the present invention have been specifically described above, but the present invention is not limited to the above-described embodiments, and various modifications can be made based on the technical idea of the present invention.

For example, n in the first embodiment described above.
Zn _1-p Mg _p S _q Se _1-q / ZnSe superlattice cladding layer 4 and p-type Zn _1-p Mg _p S _q Se _1-q / ZnS
e n-type Zn _1-p instead of the superlattice cladding layer 8
Mg _p S _q Se _1-q cladding layer and p-type Zn _1-p Mg
The _p S _q Se _1-q cladding layer may be used. Similarly, n
_-Type ZnS _y Se _1-y optical waveguide layer 5 and p-type ZnS _y Se
Instead of the _1-y optical waveguide layer 7, an n-type ZnSe optical waveguide layer and a p-type ZnSe optical waveguide layer may be used, respectively.

Further, in the above-mentioned first embodiment,
A Pd / Pt / Au electrode was used as the p-side electrode 13,
As the p-side electrode 13, for example, an Au electrode may be used.

Further, in the above-mentioned first embodiment,
The uppermost layer of the II-VI group compound semiconductor layers stacked on the n-type GaAs substrate 1 is the p-type ZnSe contact layer 1.
However, the present invention can be applied to the case where the lowermost layer of the II-VI group compound semiconductor layers stacked on the p-type GaAs substrate is the p-type ZnSe layer. Is.

Furthermore, in the third embodiment described above, instead of the n-type InAs substrate 41, for example, n-type GaS is used.
In the case of using the b substrate, the n-type InAs buffer layer 42
N-type GaSb buffer layer is used instead of n-type CdSe buffer layer 43, and n-type ZnTe
A buffer layer may be used.

Further, in the above-mentioned first, second and third embodiments, the n-type II-VI is used.
Although Cl is used as the donor impurity of the group compound semiconductor layer, iodine (I) may be used as the donor impurity.

Furthermore, in the above-described first, second and third embodiments, the case where the present invention is applied to the semiconductor laser having the SCH structure has been described. Structure (Double Heteros
In addition to being applicable to a semiconductor laser having a tructure), it can also be applied to a light emitting diode.

[0095]

As described above, according to the present invention, the terminal layer of the plurality of II-VI compound semiconductor layers is formed by a vapor phase growth method using an organometallic compound as a raw material or an organometallic compound. By being used as a raw material and grown by a vapor phase growth method using a hydrogen atmosphere,
Low operating voltage, high reliability, long life and easy to manufacture II-
A semiconductor light emitting device using a Group VI compound semiconductor can be realized.

[Brief description of the drawings]

FIG. 1 is a schematic diagram showing a relationship between an energy gap and a lattice constant of a typical binary II-VI compound semiconductor and a typical binary III-V compound semiconductor used as a substrate material. .

FIG. 2 is a sectional view showing a semiconductor laser according to the first embodiment of the present invention.

FIG. 3 is a graph showing measurement results of current-voltage characteristics of the semiconductor laser according to the first embodiment of the present invention.

FIG. 4 is a sectional view showing a semiconductor laser according to a second embodiment of the present invention.

FIG. 5 is a sectional view showing a semiconductor laser according to a third embodiment of the present invention.

[Explanation of symbols]

1 n-type GaAs substrate 2 n-type GaAs buffer layer 3 n-type ZnSe buffer layer 4 n-type Zn _1-p Mg _{p Sq} Se _1-q / ZnSe superlattice cladding layer 5 n-type ZnS _y Se _1-y optical waveguide layer 6, 26, 46 Active layer 7 p-type ZnS _y Se _1-y optical waveguide layer 8 p-type Zn _1-p Mg _p S _q Se _1-q / ZnSe superlattice cladding layer 9 p-type ZnS _v Se _1-v layer 10 p-type ZnSe layer 11 p-type ZnSe contact layer 12, 32, 52 insulating layer 13, 33, 53 p-side electrode 14, 34, 54 n-side electrode 21 n-type InP substrate 22 n-type InP buffer layer 23 n-type InGaAs buffer Layer 24 n-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se clad layer 25 n-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se optical waveguide layer 27 p-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se optical waveguide layer 28 p-type _{Zn x1 Cd y1 Mg 1-x1} -y1 Se Kura De layer 29 p-type _{Zn x4 Cd y4 Mg 1-x4} -y4 Se layer 30 p-type _{Zn p 'Cd 1-p'} Se layer 31 p-type Zn _p Cd _1-p Se contact layer 41 n-type InAs substrate 42 n-type InAs buffer layer 43 n-type CdSe buffer layer 44 n-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se _z1 Te _1-z1 clad layer 45 n-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se _z2 Te _1-z2 optical Wave layer 47 p-type Zn _x2 Cd _y2 Mg _1-x2-y2 Se _z2 Te _1-z2 optical waveguide layer 48 p-type Zn _x1 Cd _y1 Mg _1-x1-y1 Se _z1 Te _1-z1 clad layer 49 p-type Zn _{x4 cd y4 Mg 1-x4-y4} Se z4 Te 1-z4 layer 50 p-type _{Zn p 'cd 1-p'} Se q 'Te 1-q' layer 51 p-type _{Zn p cd 1-p Se q} Te 1-q Contact layer

Claims (19)

[Claims] 1. A plurality of II-VI compound semiconductor layers including at least a first clad layer of a first conductivity type, an active layer, and a second clad layer of a second conductivity type are laminated on a semiconductor substrate. The plurality of II-VI group compound semiconductor layers include Zn, Cd,
A semiconductor light-emitting device comprising at least one group II element selected from the group consisting of Mg, Hg and Be and at least one group VI element selected from the group consisting of S, Se and Te, wherein: The terminal layer of the plurality of II-VI compound semiconductor layers was grown by a vapor phase growth method using an organometallic compound as a raw material or a vapor phase growth method using an organometallic compound as a raw material and using a hydrogen atmosphere. A semiconductor light emitting device characterized by being a thing. 2. The semiconductor light emitting device according to claim 1, wherein the terminal layer is a ZnSe layer. 3. The terminal layer is Zn _p Cd _1-p Se.
2. The semiconductor light emitting device according to claim 1, wherein the layer is a layer (where 0 ≦ p ≦ 1). 4. The terminal layer is Zn _p Cd _1-p Se.
_q Te _1-q layer (where, 0 ≦ p ≦ 1 and 0 ≦ q ≦ 1) semiconductor light emitting device according to claim 1, wherein the a. 5. The at least first clad layer, the active layer and the second clad layer are grown by a vapor phase growth method using no organometallic compound as a raw material and constitute the terminal layer. The ZnSe layer is Zn
3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is grown by a vapor phase growth method using an organic metal compound containing Si and an organic metal compound containing Se or an inorganic metal compound as a raw material. 6. At least the first cladding layer, the active layer and the second cladding layer are grown by a molecular beam epitaxy method, and the ZnSe layer constituting the terminal layer is an organic layer containing Zn. The semiconductor light emitting device according to claim 2, which is grown by an organic metal chemical vapor deposition method using an organic metal compound or an inorganic metal compound containing a metal compound and Se as a raw material. 7. At least the first cladding layer, the active layer and the second cladding layer are grown by a molecular beam epitaxy method, and the ZnSe layer constituting the terminal layer is an organic layer containing Zn. 3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is grown by an organometallic molecular beam epitaxy method using a metal compound and an organometallic compound containing Se or an inorganic metal compound as a raw material. 8. At least the first cladding layer, the active layer, and the second cladding layer are grown by a metal organic molecular beam epitaxy method, and the ZnSe layer forming the terminal layer is made of Zn. 3. The semiconductor light emitting device according to claim 2, wherein the semiconductor light emitting device is grown by an organic metal chemical vapor deposition method using an organic metal compound containing and an organic metal compound containing Se or an inorganic metal compound as a raw material. 9. The semiconductor substrate is n-type, the terminal layer is a p-type ZnSe layer constituting the uppermost layer, and at least the n-type first cladding layer, the active layer and the p-type first layer. 2. The cladding layer 2 is grown by molecular beam epitaxy, and the p-type ZnSe layer is grown by metalorganic chemical vapor deposition or metalorganic molecular beam epitaxy. Item 2. The semiconductor light emitting device according to item 1. 10. At least the first clad layer, the active layer, and the second clad layer are grown by a vapor phase growth method using no organometallic compound as a raw material, and constitute the terminal layer. The above Zn _p Cd _1-p S
The e layer is grown by a vapor phase growth method using an organometallic compound containing Zn, an organometallic compound containing Cd and an organometallic compound containing Se or an inorganic metal compound as a raw material. 3. The semiconductor light emitting device according to item 3. 11. At least the first cladding layer, the active layer, and the second cladding layer are grown by a molecular beam epitaxy method, and the Zn _p Cd _1-p Se constituting the terminal layer is formed. The layer is characterized by being grown by a metal organic chemical vapor deposition method using an organometallic compound containing Zn, an organometallic compound containing Cd and an organometallic compound containing Se or an inorganic metal compound as a raw material. The semiconductor light emitting device according to claim 3. 12. At least the first cladding layer, the active layer, and the second cladding layer are grown by a molecular beam epitaxy method, and the Zn _p Cd _1-p Se constituting the terminal layer is formed. The layer is grown by an organometallic molecular beam epitaxy method using an organometallic compound containing Zn, an organometallic compound containing Cd and an organometallic compound containing Se or an inorganic metal compound as a raw material. Item 3. The semiconductor light emitting device according to item 3. 13. At least the first clad layer, the active layer and the second clad layer are grown by a metalorganic molecular beam epitaxy method, and the Zn _p Cd ₁₋ forming the terminal layer is formed. _{The p} Se layer is characterized by being grown by a metalorganic chemical vapor deposition method using an organometallic compound containing Zn, an organometallic compound containing Cd and an organometallic compound containing Se or an inorganic metal compound as a raw material. The semiconductor light emitting device according to claim 3. 14. The semiconductor substrate is n-type, and the terminal layer constitutes the uppermost layer of p-type Zn _p Cd _1-p Se.
Layers, and at least the n-type first clad layer, the active layer, and the p-type second clad layer are grown by a molecular beam epitaxy method.
The semiconductor light emitting device according to claim 1, wherein the n _p Cd _{1 -p} Se layer is grown by a metal organic chemical vapor deposition method or a metal organic molecular beam epitaxy method. 15. At least the first clad layer, the active layer, and the second clad layer are grown by a vapor phase growth method using no organometallic compound as a raw material, and constitute the terminal layer. The above Zn _p Cd _1-p S
The e _q Te _1-q layer is a vapor phase using an organometallic compound containing Zn, an organometallic compound containing Cd, an organometallic compound containing Se, or an inorganic metal compound and an organometallic compound containing Te or an inorganic metal compound as raw materials. The semiconductor light emitting device according to claim 4, wherein the semiconductor light emitting device is grown by a growth method. 16. At least the first cladding layer, the active layer, and the second cladding layer are grown by a molecular beam epitaxy method, and the Zn _p Cd _1-p Se constituting the terminal layer is formed. _q Te _1-q layer is Zn
An organometallic compound containing C, an organometallic compound containing Cd, S
an organic metal compound or an inorganic metal compound containing e and T
The semiconductor light emitting device according to claim 4, which is grown by an organometallic chemical vapor deposition method using an organic metal compound or an inorganic metal compound containing e as a raw material. 17. At least the first cladding layer, the active layer and the second cladding layer are grown by a molecular beam epitaxy method, and the Zn _p Cd _1-p Se constituting the terminal layer is formed. _q Te _1-q layer is Zn
An organometallic compound containing C, an organometallic compound containing Cd, S
an organic metal compound or an inorganic metal compound containing e and T
5. The semiconductor light emitting device according to claim 4, which is grown by an organometallic molecular beam epitaxy method using an organic metal compound containing e or an inorganic metal compound as a raw material. 18. At least the first clad layer, the active layer, and the second clad layer are grown by a metalorganic molecular beam epitaxy method, and the Zn _p Cd _1- constituting the terminal layer is formed. _p Se _q Te _1-q
The layer is formed by metalorganic chemical vapor deposition using an organometallic compound containing Zn, an organometallic compound containing Cd, an organometallic compound containing Se, or an inorganic metal compound and an organometallic compound containing Te or an inorganic metal compound as a raw material. The semiconductor light emitting device according to claim 4, wherein the semiconductor light emitting device is grown. 19. The semiconductor substrate is n-type, and the terminal layer constitutes the uppermost layer of p-type Zn _p Cd _1-p Se.
_q Te _1-q layer, wherein at least the n-type first clad layer, the active layer, and the p-type second clad layer are grown by a molecular beam epitaxy method,
The semiconductor light emission according to claim 1, wherein the p-type Zn _p Cd _1-p Se _q Te _1-q layer is grown by a metal organic chemical vapor deposition method or a metal organic molecular beam epitaxy method. element.