JPH0850146A - Connecting device and its manufacture - Google Patents

Abstract

PURPOSE:To provide a connecting device having a contact terminal which making contact with a subject to be inspected in multipoint with high density, and a method for manufacturing this device. CONSTITUTION:A silicon wafer is anisotropically etched with a silicon dioxide film as a mask to form a projection for forming a contact terminal 42, and the silicon dioxide film around this projection is anisotropically etched in U- shape, whereby a cantilever beam having the projection is formed, and the contact terminal 42 and a lead-out wiring 40 are formed by use of conductive coating. Further, a buffer layer 46 is nipped between a silicon wafer 28 having the contact terminal 42 formed thereon and a wiring base 70, and integrated thereto. Thereafter, a drawing wiring 72 is connected to the electrode 73 of the wiring base 70.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a connecting device having a contact terminal for transmitting an electric signal in contact with a contacting electrode, a method for manufacturing the connecting device, and a test device using the same.
In particular, the present invention relates to a connecting device suitable for contacting a large number of high-density electrodes for inspecting semiconductor elements.

[0002]

2. Description of the Related Art A large number of semiconductor elements for LSI are provided on a semiconductor wafer, and each is divided into chips. For example, the wafer 1 shown in FIG. 28A is provided with a large number of semiconductor elements (chips) 2 for LSI on the surface thereof, which are separated to be used as LSI. FIG. 28B is an enlarged perspective view of one of the semiconductor elements 2. A large number of electrodes 3 are arranged on the surface of the semiconductor element 2 along the periphery thereof.

In order to industrially produce a large number of such semiconductor elements 2 and inspect their electrical performances, FIG. 29 and FIG.
A connecting device having a structure as shown in 0 is used. This connecting device is composed of a probe card 4 and a probe 5 formed of a tungsten needle obliquely projected from the probe card 4. In the inspection by this connecting device, a method of inspecting the electric characteristics of the electrode 3 by rubbing the electrode 3 with the contact pressure utilizing the deflection of the probe 5 to make contact is used.

Further, as the density of semiconductor elements has increased, FIG.
As shown in 1, solder bumps 6 used for solder connection
A chip-shaped semiconductor element 2 having an electrode on its electrode has been developed. As a method of connecting such a semiconductor element 2,
As shown in FIG. 32, there is a method in which the semiconductor element 2 is opposed to the electrode 8 on the surface of the wiring board 7 and is connected via the solder bumps 6. Since this method is suitable for high-density mounting and batch connection with high yield, its application is expanding.

As an inspection method and an inspection apparatus capable of inspecting the characteristics of a semiconductor element when the high density and narrow pitch of the semiconductor element are further advanced and an operation test by a high speed signal is required, There is a technique described in Japanese Patent Laid-Open No. 64-71141. This technique uses a spring probe having a shape in which two movable pins, which are biased by springs so as to project in mutually opposite directions, are fitted into a tube so as to be retractable. In other words, the movable pin on one end side of this spring probe is brought into contact with the electrode of the inspection object, and the movable pin on the other end side is brought into contact with the terminal provided on the substrate on the measurement circuit side to perform the inspection. .

As an example of an ultrafine probe other than the spring probe, there is a technique described on pages 601 to 607 of a collection of lecture papers of ITC (International Test Conference) in 1988. FIG. 33 is a schematic view of the structure, and FIG. 34 is an enlarged perspective view of the main part of the same. The conductor inspection probe used here has wiring 11 formed on the upper surface of a flexible dielectric film 10 by a lithographic technique, and a via 12 of the dielectric film 10 provided at a position corresponding to an electrode of a semiconductor to be inspected. In addition, the semi-circular bumps 13 formed by plating are used as the contact terminals. This technique uses an inspection circuit (not shown) through the wiring 11 and the wiring board 14 formed on the surface of the dielectric film 10.
The bump 13 connected to the
This is a method in which a semiconductor element to be inspected is pressed against an electrode and signals are transmitted / received to inspect.

Further, there is one described in Japanese Patent Application Laid-Open No. 5-212118 (corresponding US application 1991 750842). This is a metal plate, for example, a stainless plate,
Corresponding to the shape of the protrusion by partially covering it with a non-conductive film such as Teflon, and pressing it with a concave tool that has a protrusion with a sharp tip on a metal part that is not covered Form a concave shape, and then deposit a metal on this to form a metal layer, and further,
Dielectric substrates are stacked. Then, the dielectric substrate including the metal layer is peeled off from the metal plate to be configured. That is, this is one in which a plurality of connector pads having sharp contact portions are arranged on the base body. Then, the pointed contact portion is pressed against the integrated circuit pad to perform inspection.

[0008]

By the way, in recent years, as the density of semiconductor elements has increased, the number of high density pins for inspection probes has increased, and electric signals are transmitted between the electrodes of the semiconductor element and the inspection circuit. It is desired to develop a simple connecting device for this purpose. Therefore, from such a viewpoint, the above-mentioned conventional technique will be examined.

In the conventional probe card inspection method shown in FIGS. 29 and 30, due to the shape of the probe 5, there is a large concentrated inductance, and there is a limit to the inspection with high-speed signals. That is, when the characteristic impedance of the signal line on the probe card is R and the concentrated inductance of the probe is L, the time constant is L / R. Therefore, R = 50
When ohm and L = 50 nH, the time constant is 1 ns. When a high-speed signal of this level is handled, the waveform becomes blunt, and accurate inspection cannot be performed. Therefore, it is usually limited to DC characteristic inspection. In the above probing method,
There is a limit to the spatial arrangement of the probes, and it is not possible to cope with the high density of electrodes of the semiconductor element and the increase in the total number.

On the other hand, in the method using the spring probe composed of two movable pins, since the probe length is relatively short, it is possible to inspect high-speed electrical characteristics. However,
Self-inductance is approximately proportional to bare probe length. Therefore, in the case of a probe having a diameter of 0.2 mm and a length of 10 mm, its inductance is about 9 nH. Crosstalk noise that disturbs high-speed electrical signals and ground level fluctuations (ground return current) are a function of the self-inductance and are approximately proportional to bare probe length. Therefore, when using a high-speed signal of several hundred MHz or more, a short probe of 10 mm or less is required. However, manufacturing such a spring probe is difficult and impractical.

Further, in the method shown in FIGS. 31 and 32, in which the bump formed by plating on a part of the copper wiring is used as a probe, the tip of the bump is flat or semicircular.
For a contacted material such as an aluminum electrode or a solder electrode, which forms an oxide on the surface of the material, the contact resistance becomes unstable, and the load at the time of contact needs to be several hundred mN or more.
However, there is a problem in making the load at the time of contact too large. That is, as the degree of integration of semiconductor elements increases, high density multi-pin and narrow pitch electrodes are formed on the semiconductor element surface. Therefore, since a large number of active elements are formed immediately below the electrodes, if the contact pressure of the probe to the electrodes during the semiconductor element inspection is too large, the electrodes and the active elements directly below the electrodes may be damaged.

Further, the method disclosed in Japanese Patent Laid-Open No. 511218/1993 has a problem that the precision of punching is poor because a hole is mechanically punched by pressing a depression tool against a metal plate to be a forming die. . That is, since the mechanical operation is performed, the positioning accuracy is limited. Also,
There are variations in how to make holes. As a result, there is a problem in that the positions, shapes, and sizes of the protrusions vary.

Further, the method disclosed in Japanese Patent Laid-Open No. 511218/1993 does not consider the contact pressure of each protrusion to be an appropriate value. In particular, JP-A-5-212118
The method disclosed in Japanese Patent Publication is expected to cause variations in the shape of the protrusions, etc. Therefore, a large contact pressure is required as a whole to completely contact the protrusions that are insufficiently contacted. Has a problem that the contact pressure becomes excessive.

A first object of the present invention is to provide a connecting device having contact terminals capable of contacting an object to be inspected at multiple points and at high density, and a method for manufacturing the connecting device.

A second object of the present invention is to provide a connecting device having a short probe length and electrical characteristics capable of handling high frequencies, and a method of manufacturing the same.

A third object of the present invention is high machining accuracy,
Moreover, it is an object of the present invention to provide a connection device that can be manufactured without requiring a fine assembly work and a manufacturing method thereof.

A fourth object of the present invention is to provide a small contact pressure,
It is an object of the present invention to provide a connection device that realizes a contact terminal having stable contact characteristics and a method for manufacturing the connection device.

A fifth object of the present invention is to provide an inspection device having a connection device with high density, multiple pins, and excellent electrical characteristics.

[0019]

In order to achieve the above first to third objects, according to the first aspect of the present invention, an object for making electrical contact with an object to be inspected and transmitting and receiving an electrical signal is provided. The connection device includes a plurality of contact terminals for making electrical contact with an object to be inspected, a lead wire drawn out from each contact terminal, and a first base material supporting the contact terminal and the lead wire. The contact terminal comprises a protrusion having a ridge, and an insulating layer supporting the protrusion, the protrusion has a conductive portion at least on the tip side thereof, and the conductive portion is A connection device is provided, which is connected to the corresponding lead-out wiring.

The protrusion has, for example, a protrusion obtained by anisotropically etching the crystalline second base material. And
The projection is formed in a shape having a pyramid or a truncated cone shape at least at the tip so that the tip has a pointed shape. For example, pyramids, truncated pyramids, and more specifically,
Examples include octagonal pyramid, octagonal pyramid, quadrangular pyramid, and quadrangular pyramid.

According to a second aspect of the present invention, there is provided a method of manufacturing a connecting device for electrically contacting an object to be inspected and transmitting and receiving an electric signal, the method comprising: Then, a step of anisotropically etching the base material to form protrusions each having a pointed tip, and forming a conductive film and a lead-out wiring on the tip side of each protrusion for each contact terminal The method for manufacturing a connection device is provided.

In order to achieve the above-mentioned fourth object of the present invention,
According to a third aspect of the present invention, in addition to the first aspect, there is provided a connecting device having a configuration in which the contact terminal is formed in a contact terminal portion formed of a cantilever. Insulating film formed in a cantilever shape, one end of which is supported by the edge of the hole, insulating film formed in a bridge shape of which both ends are supported by the edge of the hole, and insulating film supported by the entire circumference of the hole edge. , And can be appropriately provided in accordance with the size of flexibility, the size of rigidity, and the like.

According to a fourth aspect of the present invention, in addition to the first aspect, there is provided a connection device in which the contact terminal is formed on the surface of an insulating thin film.

Further, according to the fifth aspect of the present invention,
In addition to the first aspect, there is provided a connection device further including a buffer layer and a substrate, wherein the base material forming the contact terminal is fixed to the substrate with the buffer layer interposed therebetween.

According to a sixth aspect of the present invention, in addition to the second aspect, the step of forming the contact terminal further comprises:
There is provided a method of manufacturing a connection device, which further comprises a step of fixing to a substrate via a buffer layer.

In order to achieve the fifth object of the present invention, according to the seventh aspect of the present invention, an electric signal is transmitted and received by contacting each electrode of the inspection object in which a large number of electrodes are arranged. In an inspection apparatus that performs inspection by means of a sample support system that displaceably supports an inspection object, and a connection device according to the third to fifth aspects, the surface of the connection device on which the contact terminals are located is the sample. It has a probe system arranged to face the inspection object of the support system, a drive control system for controlling the displacement drive of the inspection object of the sample support system, and a tester connected to the probe system to perform the inspection. An inspection apparatus is provided which is characterized by the above.

Further, according to the eighth aspect of the present invention, in the inspection device for contacting each electrode of the inspection object on which a large number of electrodes are arranged and transmitting and receiving an electric signal to perform the inspection, It has a sample support part to support, and the connection device of the third aspect to the fifth aspect, and the connection device is arranged such that the surface with the contact terminal faces the inspection object of the sample support part. And at least one individual probe system, and a tester connected to the individual probe system to perform an inspection, the individual probe system being mounted on a motherboard,
There is provided an inspection device characterized by being connected to a tester via the motherboard.

Further, according to the ninth aspect of the present invention, in the inspection device for contacting each electrode of the inspection object on which a large number of electrodes are arranged and transmitting and receiving an electric signal to perform the inspection, It has a sample support part to support, and the connection device of the third aspect to the fifth aspect, and the connection device is arranged such that the surface with the contact terminal faces the inspection object of the sample support part. And a tester connected to the individual probe system to perform an inspection.

[0029]

According to the above construction, the contact terminal can be constructed by forming the projection formed by anisotropic etching of the base material and coating the projection with a conductive material. By anisotropic etching, for example, a pyramid shape or a truncated pyramid shape with a sharp tip is obtained. Moreover, by controlling the etching conditions, a large number of fine and high-density contact terminals can be arranged with high accuracy. Therefore, it is possible to cope with high density of the measurement object.

Further, by utilizing the protrusions formed by anisotropic etching, the length of the contact terminal is shortened to the extent that the contact terminal can be formed by the etching process (0.001 to 0.5).
mm) can be formed. As a result, the disturbance of the high speed signal can be reduced.

Further, by contacting all the surface electrodes of the semiconductor element of high density multi-pin, narrow pitch with all pins, it is possible to realize an inspection in a stable operating state with little voltage fluctuation capable of supplying power over the entire surface of the semiconductor element. As a result, high-speed AC inspection is possible, high-speed operation of the semiconductor element can be confirmed, output waveforms can be observed in detail, and the characteristic margin of the semiconductor element can be grasped, which improves efficiency in designing the semiconductor element. Feedback is possible.

Further, in the insulating film, a hole is provided in a rear portion of the protrusion that supports the protrusion. Therefore, since the rear portion of the protrusion is located at the opening of the hole and is not supported by the second base material, the insulating film is easily bent. Therefore, when the connecting device is provided with a plurality of protrusions, the insulating film bends in each protrusion, and variations in the distance between the electrode and the protrusion can be absorbed. Insulating film formed in a cantilever shape, one end of which is supported by the edge of the hole, insulating film formed in a bridge shape of which both ends are supported by the edge of the hole, and insulating film supported by the entire circumference of the hole edge. By forming it on the surface of the cantilever or the insulating film and providing a buffer layer if necessary, it is possible to absorb the variation in the distance between the electrode and the contact terminal. That is, by appropriately setting the material of the cantilever or the insulating film, the film thickness, the size, and the elastic modulus of the buffer layer, the contact terminal may damage the electrode and the active element immediately below it during probing. It is possible to easily set a moderate value that does not exist. In addition, even if the electrode to be contacted has some steps, due to the bending of the cantilever or the insulating film and the elasticity of the buffer layer,
The electrodes can be contacted with a predetermined force.

With respect to the change of the electrode pattern, it is possible to easily deal with the change of the electrode pattern only by replacing the etching pattern.

When a silicon wafer is used as the base material, a general semiconductor element manufacturing process is applied as necessary to form a capacitor, a resistor, or an integrated circuit on the surface of the silicon on which the contact terminals are formed. It is possible to improve electrical characteristics and form an inspection circuit by forming the circuit, thereby enabling high-speed AC inspection with less signal disturbance.

By using a silicon wafer as the base material, when the inspection target is a silicon-based semiconductor element,
It is possible to realize a connecting device with less displacement due to the difference in linear expansion coefficient.
For example, even a wafer state can be easily inspected at high temperature.

Therefore, it is possible to perform an operation test by a high-density signal with a high-density, super-multi-pin targeting the electrode of the semiconductor element as a contact target, and the tip position accuracy of the contact terminal is good even at high temperature, and the electrode pattern can be easily changed. It is possible to manufacture a corresponding contact device.

The connection device of the present invention is not limited to a semiconductor element as a contact target, and can be used as a contact device for facing electrodes, and can be manufactured with a narrow pitch and a large number of pins.

[0038]

EXAMPLES Hereinafter, a connecting device, contact terminals, and
The inspection apparatus will be described based on examples.

In this embodiment, first, an example in which a pyramid or a truncated pyramid is formed as a typical example of the shape of the protrusion is a pyramid or a truncated pyramid. Of course, the shape of the protrusion is not limited to this. As will be described later, the shape of the protrusion changes by appropriately setting the component ratio of the etching liquid, the liquid temperature, the etching time, etc. in anisotropic etching. For example, other shapes such as an octagonal pyramid or a truncated octagonal pyramid can be used.

FIG. 1 shows the essential parts of a first embodiment of a connecting device according to the present invention. The connection device of this embodiment includes a terminal array body 20 in which a plurality of contact terminals 42 are arranged, and the terminal array body 2
0, a support member 45 supporting 0, a buffer layer 46 loaded between the support member 45 and the terminal array 20, and a support member 45.
And a wiring board 70 for mounting each of the contact terminals 42 and an extension wiring sheet 71 for connecting the contact terminals 42 to the wiring of the wiring board 70.

The terminal array 20 is provided on the silicon wafer 28 constituting the first base material, the silicon dioxide films 26 and 30 constituting the insulating film, the contact terminal 42, and the silicon dioxide film 26, and the contact The lead wire 40 is led out from the terminal 42. The contact terminal 42 includes a protrusion 35 that serves as a contact terminal and a protrusion support 43 that supports the protrusion 35. The protrusion 35 is provided on the insulating film 36, the protrusion 34 formed by anisotropically etching the silicon wafer that is the first base material, the insulating film 36 that covers the protrusion 34, and the insulating film 36, as described later. And a conductive coating 37 that is formed. The protrusion support portion 43 is formed of the silicon dioxide film 2
It is composed of 6.

A hole 28a is provided in the rear portion of the projection 35 of the silicon wafer 28. The protrusion support part 4
3 is located at the opening of the hole so as to cover a part of the hole 28a. In this embodiment, the protrusion support portion 43 has the hole 28a.
It is fixed to one place around and is shaped like a cantilever. Therefore, the protrusion 35 is supported by the protrusion support portion 43 while being positioned on the opening surface of the hole 28a.

The extended wiring sheet 71 is an insulating film 71.
a and an extension wire 72 for drawing provided thereon. The extended wiring sheet 71 is smoothly bent outside the silicon wafer 28, one end of which is fixed to the peripheral portion of the terminal array 20 and the other end of which is fixed onto the wiring board 70. The lead-out extension wiring 72 is electrically connected to the lead-out wiring 40 and the electrode 73 provided on the wiring board 70, respectively. The connection is made using, for example, solder 74.

The peripheral portion of the lead-out wiring 40 and the electrode 73 may be connected by wire bonding instead of the lead-out extended wiring 72 provided on the insulating film 71a.

The wiring board 70 is made of, for example, a resin material such as polyimide or glass epoxy, and the electrode 73 described above is used.
Besides, it has an internal wiring 70a, a connection terminal 70b, and the like. The wiring board 70 and the support member 45 are adhered to each other by using, for example, a silicone adhesive.

The insulating film 71a is made of a resin having flexibility and preferably heat resistance. In this embodiment, a polyimide resin is used. The buffer layer 46 is made of an elastic material such as elastomer. Specifically, silicon rubber or the like is used. The contact terminals 42 and the lead wires 40 are made of a conductive coating. Details of these will be described later. Further, in FIG. 1, the contact terminal 42 and the lead-out wiring 40 are shown only for one contact terminal for the sake of simplicity of explanation, but of course, actually, a plurality of them are arranged as will be described later.

FIG. 2 shows the essential parts of a second embodiment of the connection device according to the present invention. The connecting device shown in FIG.
8 is different from the connection device shown in FIG. 1 except that the etching shape of the hole 28a provided in the contact hole 8 is different and, in connection with this, the structure of the contact terminal 75 is different. That is, in the present embodiment, in the terminal array 20, the holes 28a are provided so as to penetrate the silicon wafer 28 and the silicon dioxide film 30. Also,
In this embodiment, the projection support portion 43 is fixedly supported on the entire circumference of the opening of the hole 28a. Therefore, the contact terminal 75 is
It is provided so as to cover the opening of 8a. Details of the contact terminal 75 will be described later.

FIG. 3 shows the essential parts of a third embodiment of the connection device of the present invention. The connecting device shown in FIG. 3 is configured in the same manner as the connecting device shown in FIG. 2 except that the structure of the holes 28a and the structure of the contact terminals 76 in the terminal array 20 are different. Details of the contact terminal 76 will be described later.

FIG. 4 shows the essential parts of a fourth embodiment of the connection device of the present invention. The connecting device shown in FIG.
7 is the same as the connecting device shown in FIGS. 1, 2 and 3 except that the structure of the contact terminal 79 in which the insulating material 78 is provided on the surface of 7 is different. However, the wiring for drawing 77
The extension wiring 72 for drawing provided on the insulating film 71a is connected to the peripheral edge of the extension wiring 7 for drawing through the via 80 provided on the insulating film 71a.
2 is electrically connected to the electrode 73 provided on the wiring board 70. For details of this contact terminal 79,
It will be described later.

FIG. 23 (b ') shows the essential parts of the fifth embodiment of the present invention. The connecting device shown in FIG. 23 (b ') has the same basic structure as that of the third embodiment shown in FIG. The difference is that the projection support portion 43 is supported by two opposite sides of the peripheral edge of the opening of the hole 26a, and the contact terminal 76a has a bridge structure. Details of the contact terminal 76a of this embodiment will be described later.

Next, the structure and manufacturing method of the contact terminal portion of the connection device of the first embodiment will be described.

The connection device shown in FIG. 7 has the silicon dioxide film 26 as the projection supporting portion 43 of the cantilever structure, and is provided with the contact terminal 42. The contact terminal 42 includes the protrusion 34 and the silicon dioxide 3 that covers the protrusion 34.
6 and a conductive coating made up of a conductive film 39 and a plating film 44, which is attached to the tip of the projection-shaped product. Further, in this connection device, the lead-out wiring 40 is formed integrally with the surface of the silicon dioxide film 26, with one end thereof being connected to the conductive film 39 attached to the tip portion of the contact terminal 42. . Further, on the other surface of the silicon wafer 28 having the projection support portion 43 formed on the surface thereof, silicon rubber as an elastomer forming the buffer layer 46 and a silicon wafer forming the support member 45 are arranged. In this embodiment, the conductive film 39 has a two-layer structure in which the gold film 39b is deposited on the chromium film 39a. The plated film 44 is composed of a rhodium film.
The reason why rhodium is used as the plating film 44 is that the hardness of rhodium is larger than that of gold.

FIG. 7 shows typical dimensions of each part of the connection device of this embodiment. The example of dimensions shown in FIG. 7 is for a quadrangular pyramid-shaped contact terminal with one side of the bottom surface of 30 μm. Since the contact terminals are formed by patterning a silicon wafer by a photolithographic technique, the position and size can be determined with high accuracy. Further, since it is formed by anisotropic etching, the shape can be sharpened. In particular, the tip can be sharpened.
These features are common to the other embodiments. It should be noted that the dimensions and arrangement are merely examples, and the present invention is not limited to this. Further, not limited to this embodiment,
In other embodiments, the same size and processing accuracy can be realized.

The pointed tip of the contact terminal is
The reason is as follows.

When the electrode to be measured is aluminum, an oxide film is formed on the surface and the resistance at the time of contact becomes unstable. In order to obtain a stable resistance value of 0.5Ω or less in contact with such an electrode, the tip of the contact terminal breaks through the oxide film on the surface of the electrode, so that a good resistance can be obtained. Need to ensure contact. To do this, for example,
If the tip of the contact terminal is semi-circular, 300 per pin
It is necessary to rub each contact terminal against the electrode with a contact pressure that gives a load of mN or more. On the other hand, in the case where the tip of the contact terminal has a flat portion with a diameter in the range of 10 μm to 30 μm, it is necessary to rub each contact terminal against the electrode with a contact pressure of 100 mN or more per pin. .

On the other hand, in the case of the contact terminal of the connecting device of the present embodiment having the shape indicated by the above numerical values, if there is a contact pressure of 5 mN or more per pin, it will not rub against the electrode, By simply pressing, electricity can be supplied with stable contact resistance. As a result, since it suffices to contact the electrode with a low stylus pressure, it is possible to prevent damage to the electrode or the element immediately below it. Further, the force required to apply the pin pressure to all the contact terminals can be reduced. As a result, it is possible to reduce the withstand load of the prober driving device in the test device using this connecting device and reduce the manufacturing cost.

If a load of 100 mN or more per pin can be applied, for example, if the contact terminal is a protrusion having a truncated square pyramid, one side of the flat end of the truncated pyramid is less than 30 μm. For example, it does not have to be as sharp as a dot. However, for the reasons described above, it is preferable to make the area of the tip portion as small as possible.

Next, a manufacturing process for forming the connecting device shown in FIG. 1 will be described with reference to FIGS. FIG. 5 and FIG. 6 show, in the order of steps, a manufacturing process for forming the terminal array 20 having the contact terminals made of a cantilever in the connection device according to the first embodiment of the present invention.

In this embodiment, an SOI substrate having a structure in which silicon dioxide 26 is sandwiched between single crystal silicon wafers 27 and 28 is used. That is, the protrusions 34 are formed on the silicon wafer 27 by anisotropic etching,
A hole 28a is formed in the silicon wafer 28 by etching,
At the opening of the hole 28a, the silicon dioxide film 26 is left in the shape of a cantilever, the protrusion supporting portion 43 is formed, and the contact terminal 42 is formed.

FIG. 5A shows an SOI substrate having a structure in which silicon dioxide 26 having a thickness of about 0.5 to 5 μm is sandwiched between silicon single crystals 27 and 28. The process of forming the silicon dioxide films 29 and 30 by thermal oxidation is shown in FIG. Oxidation of the silicon single crystals 27 and 28 is performed by thermal oxidation in wet oxygen at an oxidation temperature of 1000 ° C. for 100 minutes, for example.
Silicon dioxide films 29 and 30 are formed to a thickness of about 0.5 μm.

FIG. 5B shows the silicon dioxide film 29.
And photoresist masks 31 and 32 on the surfaces of
And forming a mask of the silicon dioxide film 33 by etching the silicon dioxide film 29. The photoresist masks 31 and 32 are formed as follows. First, OFPR800 (manufactured by Tokyo Ohka Kogyo Co., Ltd.) is applied as a photoresist on the surfaces of the silicon dioxide films 29 and 30. Then, at the position to form the contact terminal,
A square pattern with one side of about 10 to 40 μm is exposed and developed with a developer NMD3 (manufactured by Tokyo Ohka Kogyo). Next, the silicon dioxide film 29 exposed from the photoresist masks 31 and 32 is etched by immersing it in a 1: 7 mixed solution of hydrofluoric acid and ammonium fluoride solution.

FIG. 5C shows the photoresist mask 3 described above.
1 and 32 are removed, the (100) plane of the silicon single crystal 27 is anisotropically etched by using the silicon dioxide film 33 as a mask, and a step in the middle of forming a protrusion 34 having a pointed tip is shown. . The silicon single crystal 27 is etched by, for example, immersing it in an etching solution containing potassium hydroxide, isopropanol, and water. After etching, photoresist masks 31 and 32
Is removed with a stripping solution S502a (manufactured by Tokyo Ohka Kogyo).

In FIG. 5D, anisotropic etching is performed to form protrusions 34 having sharp tips, and then silicon dioxide film 36 is formed on the surfaces of the protrusions 34 by thermal oxidation.
The process of forming the protrusion 36 will be described. The oxidation of the protrusions 34 made of silicon is performed, for example, by thermal oxidation in wet oxygen. As a result, the silicon dioxide film 36 is formed to a thickness of about 0.5 μm. It should be noted that FIG.
It is a top view when the projection part 35 of (d) is seen from lower part.

In FIG. 5E, a conductive coating 37 is formed on the surface of the silicon dioxide film 36 on the surface of the protrusion 35, and the surface of the protrusion 35 and the conductive coating 37 are formed so as to form a wiring pattern. A process of forming a photoresist mask 38 so as to cover the surface of the coating 37 is shown. As the conductive coating 37, for example, a sputtering method or a vapor deposition method,
After depositing chromium having good adhesion to silicon dioxide to 0.02 μm, form a film to deposit gold to 0.2 to 0.5 μm, or deposit titanium to 0.02 μm by sputtering method or vapor deposition method. After wearing, 0.2 ~ 0.5μ gold
The deposited film may be formed.

In FIG. 5 (f), the conductive coating 37 is etched by the photoresist mask 38, and the projection 35 is formed.
After forming the conductive film 39 and the wiring 40 of, the projection 3 of the silicon dioxide 26 is formed by the photoresist mask 41.
5 shows a step of removing, by etching, a portion to be left as an insulating film for supporting 5 as a groove portion 26a for separating from another silicon dioxide film 26. In this step, OFPR800 (manufactured by Tokyo Ohka Kogyo) is applied as a photoresist, and OFPR800 (manufactured by Tokyo Ohka Kogyo) on the surface of the silicon dioxide 26 around the protrusion 35 is formed on two sides in the longitudinal direction of the rectangle. The short one side portion orthogonal to each other is exposed in a strip shape. That is, an exposure pattern having a shape similar to a U-shape (herein, this shape is referred to as a U-shape for convenience of description) is formed. Then, the photoresist mask 41 is formed by developing with NMD3 (manufactured by Tokyo Ohka Kogyo). Next, the silicon dioxide film 2 exposed from the photoresist mask 41
6 is immersed in a 1: 7 mixed solution of hydrofluoric acid and ammonium fluoride solution for etching.

FIGS. 6G, 6H and 6I show step by step the steps of forming the projection supporting portion 43 having a cantilever structure. That is, here, the photoresist mask 41 is removed, and the remaining silicon dioxide film 26 is used as a mask to etch the (100) plane of the silicon single crystal 28 through the groove 26a. As a result, the protrusion 3 formed of the silicon dioxide film 26 and provided with the conductive film 39.
Thus, a cantilever-shaped projection support portion 43 that supports 5 on its surface is obtained. 6 (g ′) is a plan view of (g) viewed from below, and FIG. 6 (i ′) is a plan view of (i) viewed from below,
FIG. 6 (i ″) is a perspective view of (i) viewed from below.

Here, the photoresist mask 41 is S5.
02a (manufactured by Tokyo Ohka Kogyo Co., Ltd.). The silicon single crystal 28 is etched by, for example, immersing it in an etching solution containing potassium hydroxide and water. Instead of this solution, an etching solution containing potassium hydroxide, isopropanol and water may be used. Further, in this step, gold, rhodium, or the like is 0.2 to 2 μm on the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal.
By providing the plating film 44 by plating to some extent, the electrical contact characteristics can be stabilized.

FIG. 7 shows a step of fixing the substrate composed of the silicon single crystal 28 and the silicon dioxides 26 and 30 having the contact terminals 42 to the supporting member 45. Here, a silicon substrate is used as the support member 45.
A buffer layer 46 is sandwiched between the surface of the silicon dioxide film 30 and the support member 45 to be integrated. In this embodiment, for example, the thickness is 0.2 to 3 mm and the hardness (JISA) is 1.
About 5-70 silicone rubber is used as the buffer layer 46. However, the buffer layer 46 is not limited to this.
The silicon dioxide film 30 and the silicon support member 4
The adhesive of 5 does not require an adhesive agent because the silicone rubber itself has an adhesive force. In addition, you may make it adhere | attach using an adhesive agent.

According to this embodiment, it is possible to easily form even the contact terminals having the pitch of the electrode pad portion of about 10 μm.
Further, the accuracy of the height of the contact terminal can be achieved within ± 2 μm. Further, in this embodiment, since the contact terminal is formed in a cantilever shape, its flexibility is increased. Therefore, it is easy to absorb the influence of the unevenness of the electrode of the measurement object.

Next, another manufacturing process for forming the connection device shown in FIG. 1 will be described with reference to FIGS. 8 and 9. This embodiment is an example of using an SOI substrate having a structure in which a plurality of insulating layers are sandwiched one by one. The description of the same steps as those shown in FIGS. 5 and 6 will be omitted.

In FIG. 8A, silicon dioxide 26 and 47 having a thickness of 0.5 to 5 μm are formed into silicon single crystals 27 and 28.
A process of forming silicon dioxide films 29 and 30 on the (100) planes of silicon single crystals 27 and 48 by thermal oxidation in an SOI substrate having a structure sandwiched between and is shown. The silicon single crystals 27 and 48 are oxidized by, for example, thermal oxidation in wet oxygen to form the silicon dioxide films 29 and 30 to about 0.5 μm. After this,
With respect to the silicon dioxide film 29, the silicon single crystal 27, and the silicon dioxide 26, the conductive film 39 and the wiring 40 of the protrusion 35 are formed by the same steps as the steps of FIGS. 5B to 5E.

In FIG. 8B, a portion of the silicon dioxide 26 that is to be left as an insulating film that supports the protrusion 35 is to be a groove portion 26a for separating from another silicon dioxide film 26, and a photoresist mask 41 is formed. Open by
A step of removing the silicon dioxide 26 in that portion by photoetching is shown.

FIGS. 8C, 8D and 9E show
By removing the photoresist mask 41 and etching the (100) plane of the silicon single crystal 28 until the silicon dioxide layer 47 is exposed, a projection having a cantilever structure of the silicon dioxide film 26 having a projection 35 on the surface is formed. The step of forming the support portion 43 is shown in stages. Note that FIG. 8C 'is a plan view of FIG.
9E is a plan view of FIG. 9E viewed from below, FIG.
(E '') is a perspective view of (e) as seen from below.

In this embodiment, the electric contact characteristics can be stabilized by plating the surface of the conductive film 39 having the quadrangular pyramid shape at the tip of the contact terminal with gold or rhodium.

In this manufacturing method, the silicon dioxide layer 4 is used.
By the presence of 7, it is possible to reliably stop the anisotropic etching of the silicon single crystal 28 at the silicon dioxide layer 47. As a result, compared with the manufacturing method shown in FIGS. 5 and 6, there are advantages that the processing accuracy is improved and the etching process is easily controlled.

Next, another manufacturing process for forming the connecting device shown in FIG. 1 will be described with reference to FIG. The description of the same steps as those shown in FIGS. 5 and 6 will be omitted.

In FIG. 10A, the conductive film 39 and the wiring 40 of the protrusion 35 are formed by the same steps as the steps of FIGS. 5A to 5F, and then the photoresist mask 41 is used. Silicon dioxide 2 around the protrusion 35
The step of removing 6 by etching is shown.

10 (b), 10 (c) and 10 (d), the photoresist mask 41 is removed and the silicon single crystal 2 shown in FIG.
By etching the (100) plane of No. 8
7A is a stepwise view showing the step of forming a and the step of forming the projection support portion 43 of the silicon dioxide film 26 having a cantilever structure. 10D 'is a perspective view of FIG. 10D as seen from below. The silicon single crystal 28 is etched, for example, by immersing it in an etching solution containing ethylenediamine, pyrocatechol and water as its components. Instead of this solution, an etching solution containing potassium hydroxide and water may be used. Alternatively, an etching solution containing potassium hydroxide, isopropanol and water may be used.

In this embodiment, by plating the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal with gold, rhodium or the like, the electrical contact characteristics can be stabilized.

Next, another manufacturing process for forming the connection device shown in FIG. 1 will be described with reference to FIG. The description of the same steps as those shown in FIGS. 5 and 6 will be omitted.

FIG. 11A shows an SOI substrate having a structure in which silicon dioxide 26 having a thickness of 1 to 10 μm is sandwiched between silicon single crystals 27 and 28, and the steps similar to those shown in FIG. A process of anisotropically etching the (100) plane of the silicon single crystal 27 using the silicon dioxide film 33 as a mask to form the protrusion 34 having a pointed tip is shown. That is, the present embodiment is an example of forming a quadrangular pyramid-shaped protrusion.

FIG. 11B shows the silicon dioxide film 3 described above.
A process of stopping the anisotropic etching of the silicon single crystal 27 and removing the silicon dioxide film 33 by etching in a state in which the mask of No. 3 is still attached and left on the protrusion 34 is shown. In this etching, the silicon dioxide film 26 and the silicon dioxide film 30 are also partially or entirely etched at the same time.

FIG. 11C shows that the protrusion 34 is formed by thermal oxidation.
And the silicon dioxide film 4 on the surface of the silicon single crystal 28.
9 shows a process of forming 9 and 50. The silicon is oxidized, for example, by thermal oxidation in wet oxygen to form a silicon dioxide film of about 0.5 μm.

FIG. 11D shows a step of forming the projection supporting portion 43 having a cantilever structure. That is, in this step, the hole (28a) is formed by etching the (100) plane of the silicon single crystal 28 by the same steps as the steps shown in FIGS. 5 (e) to 6 (i). As a result, the protrusion supporting portion 43 having the cantilever structure of the silicon dioxide film 49, which has the protrusion 35 having a sharp tip on the surface, is formed. Note that FIG. 11D 'is a perspective view of FIG. 11D as seen from below.

In this embodiment, the surface of the conductive film 39 at the tip of the contact terminal is plated with gold, rhodium or the like to stabilize the electrical contact characteristics.

In this manufacturing method, a flat portion having an arbitrary size can be formed at the tip of the protrusion 34, as compared with the manufacturing method shown in FIGS. This method is shown in FIG.
Not limited to the substrate structure shown in FIG. 1, it is effective in a process of forming a protrusion having a flat portion of an arbitrary size by anisotropically etching a silicon single crystal using a silicon dioxide film as a mask. Is.

Next, the manufacturing process for forming the connection device shown in FIG. 2 will be described with reference to FIGS. 12, 13 and 14.
Will be described with reference to.

FIG. 12A shows an SOI substrate having a structure in which silicon dioxide 26 having a thickness of 0.5 to 5 μm is sandwiched between single-crystal silicon wafers 27 and 51. Silicon wafer 51
On the (110) surface of the silicon dioxide film 29 by thermal oxidation.
The process of forming 30 and 30 is shown. Silicon wafer 27
The oxidation of the silicon dioxide films 29 and 30 is performed by thermal oxidation in wet oxygen to 0.5 μm.
Form about m.

FIG. 12B shows the silicon dioxide film 2 described above.
Photoresist masks 31 and 3 on the surfaces of 9 and 30
2 shows the step of forming 2 and etching the silicon dioxide film 29.

In FIG. 12C, the photoresist masks 31 and 32 are removed, and the (100) surface of the silicon wafer 27 is anisotropically etched by using the silicon dioxide film 33 as a mask to form a projection having a sharp tip. A step in the middle of forming the portion 34 is shown.

In FIG. 12D, anisotropic etching is performed.
A step of forming a protrusion portion 35 by forming a silicon dioxide film 36 on the surface of the protrusion 34 by thermal oxidation after forming the protrusion 34 having a sharp tip is shown. For the oxidation of the protrusions 34 made of silicon, for example, thermal oxidation in wet oxygen forms a silicon dioxide film 36 of about 0.5 μm.

FIG. 12E shows a step of forming photoresist masks 52 and 53 on the surfaces of the silicon dioxide film 36 and the silicon dioxide film 30 on which the protrusions 35 are formed, and etching the silicon dioxide film 30.

In FIG. 12F, the photoresist masks 52 and 53 are removed, and the silicon dioxide film 30 is used as a mask to anisotropically etch the (110) surface of the silicon wafer 51 up to the silicon dioxide layer 26. Hole 5
The process of forming 1a is shown.

As shown in FIG. 12 (f '), a film composed of the silicon dioxide layer 26 and the silicon wafer 51 with the (110) plane of the silicon wafer 51 slightly left on the surface of the silicon dioxide layer 26. Thus, the protrusion supporting portion 43 can be formed. In this case, the silicon wafer 51
The strength and flexibility of the protrusion support portion 43 may be adjusted by the thickness of the. The subsequent process is shown in FIG.
Since it is the same as the step following (f), the description thereof will be omitted.

The above-mentioned method is not limited to the substrate structure shown in FIG.
1 (110) plane or the silicon wafer 28 (1
The (00) plane is anisotropically etched in the direction of the silicon dioxide layer 26, which is effective in the step of forming a film composed of the silicon wafer and the silicon dioxide layer 26 having an arbitrary thickness.

In FIG. 13 (g), a conductive coating 37 is formed on the surface of the silicon dioxide film 36 on the surface of the protrusion 35, and the conductive coating 37 is formed so as to form a pattern for forming the surface of the protrusion 35 and wiring. A step of forming a photoresist mask 38 covering the surface of the coating 37 is shown. As the conductive coating 37, for example, a sputtering method or an evaporation method is used to deposit chromium of 0.02 μm and then gold of 0.2 to 0.5 μm.
The deposited film may be formed, or titanium may be deposited to a thickness of 0.02 μm and then gold may be deposited to a thickness of 0.2 to 0.5 μm by a sputtering method or a vapor deposition method.

In FIG. 13 (h), the conductive coating 37 is etched by the photoresist mask 38, and the projection 3 is formed.
The process of forming the conductive film 39 and the wiring 40 of No. 5 is shown.
13 (h ') and (h'') are plan views of (h) viewed from below. Here, FIG. 6 (h ') shows that the silicon wafer 51 is partially anisotropically etched to reach the silicon dioxide layer 26 on which the protrusions 35 are formed.
This is an example in which the conductive film 39 is formed. (H ″) is a conductive film 39 so as to cover the entire anisotropically etched portion.
It is an example of forming.

Further, in this example, the silicon dioxide film 2 is formed on the entire circumference of the opening of the hole 51a provided in the silicon wafer 51.
6 is supported, and the opening of the hole 51a is formed by the silicon dioxide film 2
Closed at 6. Therefore, this example is characterized in that the protrusion support portion 43 has a smaller flexibility as compared with the case of the cantilever structure, but conversely has a large rigidity.

After this step, the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal is plated with gold, rhodium or the like by about 0.2 to 2 μm to stabilize the electrical contact characteristics. Can be

14 (i) and 14 (j) show the surface of the silicon dioxide film 30 of the substrate composed of the silicon wafer 51 and the silicon dioxide 30 having the silicon dioxide film 26 having the protrusions 35 on the surface. Support member 45
The step of sandwiching the buffer layer 46 between and to integrate the two is shown. In the example of FIG. 14J, the buffer layer 46 is also filled in the holes 51 a provided in the silicon wafer 51. The buffer layer 46 has, for example, a thickness of 0.2 to 3 mm,
Silicon rubber having a hardness (JISA) of about 15 to 70 is used. However, the material for the buffer layer is not limited to this. The silicon dioxide film 30 and the support member 45
Since the silicone rubber 46 itself has adhesive strength,
No need for glue. In addition, you may make it adhere | attach using an adhesive agent. Further, in this embodiment, as in the other embodiments, a silicon substrate is used as the support member 45.

In FIG. 14 (k), an insulating film 54 is applied to the surface of a substrate made of silicon dioxide 30 and the silicon wafer 51 on which the silicon dioxide film 26 having the projections 35 is formed. Here is an example.

Further, FIG. 14L shows the insulating film 54.
This is an example of sandwiching and using the silicon dioxide film 30 and the supporting member 45. In this embodiment, for example, the insulating film 54 is made of polyimide having a thickness of 5 to 20 μm.
Used as. However, the insulating film is not limited to this. A buffer layer may be sandwiched between the insulating film 54 and the support member 45.

As described above, the structure in which the elastomer and the silicon substrate are attached or the structure in which the insulating film is attached can improve the strength of the contact terminal portion and control the elastic modulus.

Another manufacturing process for forming the connecting device shown in FIG. 2 will be described with reference to FIG. Note that the description of the same steps as the processes shown in FIGS. 12-14 will be omitted.

FIG. 15A shows the (100) plane of the silicon wafer 27 with the silicon dioxide film 33 as a mask.
Anisotropically-etched protrusion 3 having a pointed end
4 shows a step of forming 4. As a substrate, thickness 1-10μ
m of silicon dioxide 26 is sandwiched between silicon wafers 27 and 51 made of a silicon single crystal.
Using the OI substrate, anisotropic etching is performed by the same steps as the steps shown in FIGS.

FIG. 15B shows the silicon dioxide film 3 described above.
A process of stopping the anisotropic etching of the silicon wafer 27 and removing the silicon dioxide film 33 by etching in a state in which the mask of No. 3 is still attached to the protrusions 34 and remains is shown. In this etching, the silicon dioxide 26 and the silicon dioxide film 30 are also partially or entirely etched at the same time.

FIG. 15C shows that the protrusion 34 is formed by thermal oxidation.
And silicon dioxide 49 on the surface of the silicon single crystal 51.
The process of forming the protrusions 35 by forming the and 50. The silicon is oxidized, for example, by thermal oxidation in wet oxygen to form a silicon dioxide film of about 0.5 μm.

In FIG. 15D, the (110) surface of the silicon wafer 51 is etched by the same process as the process shown in FIGS. 12E to 13H.
Along with forming the hole 51a, the conductive film 39 is formed on the silicon dioxide film 49 on the surface of the protrusion 35 having a substantially pointed tip.
A process of forming the wiring 40 is shown.

After this step, the surface of the conductive film 39 at the tip of the contact terminal is plated with gold, rhodium or the like to stabilize the electrical contact characteristics.

Note that this manufacturing method can form a flat portion of an arbitrary size at the tip of the protrusion 34, as compared with the manufacturing method of FIGS. This method is not limited to the substrate structure shown in FIG. 15, and is effective in the step of forming the protrusion by anisotropically etching the silicon single crystal using the silicon dioxide film as a mask. Further, in this embodiment, the entire opening of the hole 51a is
The structure is covered with the silicon dioxide film 26. Therefore,
It has the same characteristics as the structure shown in FIG. 13 (h ′) or (h ″). In particular, in this example, since the protrusion 35 has a truncated pyramid shape, the area of the tip is larger than that of a pyramidal shape. Therefore, it can be expected that the rigidity of the protrusion support portion 43 is large, which is useful for increasing the contact pressure of the protrusion.

Next, a manufacturing process for forming the connection device shown in FIG. 3 will be described with reference to FIGS. Note that the description of the same steps as the processes shown in FIGS. 12-14 will be omitted.

FIG. 16A shows an SOI substrate having a structure in which silicon dioxide 26 having a thickness of 0.5 to 5 μm is sandwiched between silicon wafers 27 and 28.
7 and the (10) plane of the silicon wafer 28 (10
Silicon dioxide films 29 and 30 on the (0) surface by thermal oxidation
The process of forming the is shown. Silicon wafers 27 and 28
Oxidation of, for example, by thermal oxidation in wet oxygen,
Silicon dioxide films 29 and 30 are formed to a thickness of about 0.5 μm.

FIG. 16B shows a step of forming a protrusion 34 on the silicon dioxide film 26, forming a hole 28a in the silicon wafer 28, and forming a conductive coating on the protrusion 35. That is, in this step, FIG.
By the same steps as the steps up to (d), the protrusions 34 having a sharp tip are formed on the silicon dioxide film 26, and then the steps up to FIGS. 12 (e) to 13 (h) are performed. By the step, the (100) plane of the silicon wafer 28 is etched to form the hole 28a in the silicon wafer 28. The opening of the hole 28a is covered with the silicon dioxide film 26. Then, a step of forming the conductive film 39 and the lead wiring 40 on the protrusion 34 and the silicon dioxide film 26 formed on the silicon dioxide film 26 covering the opening will be described.

16 (b ') and (b'').
[Fig. 3] is a plan view of (b) viewed from below. Here, FIG.
6 (b ′) is an example in which a conductive film 39 is formed on a part of a portion where the silicon wafer 28 is anisotropically etched to the silicon dioxide layer 26 on which the protrusion 34 is formed.

(B '') is an example in which the conductive film 39 is formed so as to cover the entire anisotropically etched portion.

After this step, the surface of the conductive film 39 having the quadrangular pyramid shape at the tip of the contact terminal is plated with gold, rhodium or the like by about 0.2 to 2 μm to stabilize the electrical contact characteristics. can do.

As shown in FIGS. 17C to 17F, as in the steps shown in FIGS. 14I to 14L, as shown in FIGS.
By providing the buffer layer 46 and the support member 45 with a silicon substrate structure or an insulating film 54 structure, the strength of the contact terminal portion can be improved and the elastic modulus can be controlled.

FIG. 18 shows a manufacturing method for forming the silicon dioxide layer 26 supporting the protrusion 35 of FIG. 16B into a cantilever structure. The description of the same steps as those shown in FIGS. 16 and 17 will be omitted.

In FIG. 18A, the silicon dioxide layer 26 on which the protrusions 35 are formed is formed on the silicon dioxide 26 around the protrusions 35 by the photoresist masks 55 and 56.
As described above, the step of removing by etching in a U shape will be described. OFPR as photoresist
A photoresist mask is formed by applying 800 (Tokyo Ohka Kogyo), exposing OFPR800 (Tokyo Ohka Kogyo) on the surface of the silicon dioxide 26 around the protrusion 35 in a U-shape, and developing with NMD3 (Tokyo Ohka Kogyo). 55
To form. Next, the silicon dioxide film 26 that is not covered with the photoresist mask 55, that is, exposed, is etched by immersing it in a 1: 7 mixed solution of hydrofluoric acid and ammonium fluoride solution.

FIG. 18B shows a photoresist mask 55.
And 56 are removed, and a step of forming the projection support portion 43 having a cantilever structure of the silicon dioxide film 26 having the projection 35 on the surface is shown. Note that FIG. 1 (b ') is a plan view of (b) viewed from below. The photoresist masks 55 and 56 are removed using S502a (Tokyo Ohka Kogyo).

In this example, the surface of the conductive film 39 having a quadrangular pyramid shape at the tip of the contact terminal is plated with gold, rhodium, or the like by about 0.2 to 2 μm to stabilize the electrical contact characteristics. can do.

FIG. 18C shows the silicon dioxide film 3 on the substrate composed of the silicon wafer 28 and the silicon dioxides 26 and 30 on which the protrusion supporting portions 43 having the cantilever structure are formed.
A step of sandwiching the buffer layer 46 between the surface of the substrate 0 and the silicon substrate 45 and integrating them will be shown.

Next, a manufacturing process for forming the connection device shown in FIG. 4 will be described with reference to FIG.

FIG. 19 shows a method for forming a quadrangular pyramid hole by anisotropic etching in a silicon wafer as a base material, and using this silicon wafer as a mold to form the tip portion of the quadrangular pyramid contact terminal with a thin film. The manufacturing process is shown in the order of steps.

In FIG. 19A, silicon dioxide 26 having a thickness of about 0.5 to 5 μm is formed on silicon wafers 27 and 28.
A process of forming silicon dioxide films 29 and 30 by thermal oxidation on the (100) planes of silicon wafers 27 and 28 in an SOI substrate having a structure sandwiched between is shown. The silicon wafers 27 and 28 are oxidized, for example, by thermal oxidation in wet oxygen to form the silicon dioxide films 29 and 30 with a thickness of about 0.5 μm.

FIG. 19B shows the silicon dioxide film 2 described above.
Photoresist masks 31 and 3 on the surfaces of 9 and 30
2 shows the step of forming 2 and etching the silicon dioxide film 30.

In FIG. 19C, the photoresist masks 31 and 32 are removed, and the silicon dioxide film 30 is used as a mask to anisotropically etch the (100) plane of the silicon wafer 28 up to the silicon dioxide layer 26. Hole 2
A step of forming a silicon dioxide film 57 on the surface of the silicon wafer 28 by thermal oxidation after forming 8a will be described.
The silicon is oxidized by, for example, thermal oxidation in wet oxygen to form a silicon dioxide film 57 of about 0.5 μm.

FIG. 19D shows the silicon dioxide film 5 described above.
A step of forming a photoresist mask 58 on the surface of No. 7 and etching the silicon dioxide film 26 to form an opening 26b is shown.

In FIG. 19E, the photoresist mask 58 is removed and the silicon dioxide film 26 is used as a mask.
The (100) plane of the silicon wafer 27 is anisotropically etched through the opening 26b to form a quadrangular pyramid-shaped etching hole 59.
The process of forming the is shown.

FIG. 19F shows a step of forming the conductive coating 37. That is, in this step, first, the conductive coating 37 is formed on the surfaces of the etching hole 59 and the silicon dioxide films 26, 57 and 30. After this,
A photoresist mask 60 is formed on the surface of the conductive coating 37 so as to cover the surface of the etching hole 59 and form a wiring forming pattern, and the conductive coating 37 exposed from the photoresist mask 60. To etch. The conductive coating 37 is formed by, for example, a sputtering method or a vapor deposition method, by depositing gold with a thickness of 0.2 to 0.5 μm. The conductive coating 37 is formed by depositing nickel on the gold film to a thickness of about 1 to 2 μm by a sputtering method or a vapor deposition method, and depositing nickel, copper, or both on the surface by 2 to 2 μm.
You may make it plate about 40 micrometers.

As a conductive coating 37, a noble metal such as gold or rhodium is deposited to a thickness of about 0.1 to 0.5 μm by a sputtering method or a vapor deposition method, and nickel is deposited on the film.
A film having a thickness of about 2 μm and deposited by a sputtering method or a vapor deposition method may be used.

In FIG. 20G, a buffer layer 46 is provided between the surface of the photoresist mask 60 and the silicon dioxide film 30 deposited on the surface of the conductive coating 37 and the silicon substrate which is the supporting member 45. The process of filling and integrating is shown. As the buffer layer 46, for example, silicon rubber is used. Moreover, what was formed by apply | coating polyimide and heat-hardening can be used. Further, it is possible to use one formed by adhering a two-layer polyimide film in which the polyimide before thermosetting is applied to the lower surface of the thermosetting polyimide to the surface of the conductive coating 37 and heating and curing the same.

FIG. 20H shows a step of forming the protrusion 35 by etching and removing the silicon dioxide film 31 and the silicon wafer 27, respectively. This example
Unlike the above example in which the protrusion 35 is composed of the silicon single crystal protrusion 34, the protrusion 35 is not composed of silicon single crystal.

In this example, the surface of the conductive coating 37 having the shape of a quadrangular pyramid at the tip of the contact terminal is plated with gold, rhodium, or the like by about 0.2 to 2 μm to stabilize the electrical contact characteristics. Can be

Next, another manufacturing process for forming the connection device shown in FIG. 4 will be described with reference to FIG. The description of the same steps as those shown in FIGS. 19 and 20 will be omitted.

In FIG. 21A, the silicon dioxide 26 having a thickness of about 0.5 to 5 μm is formed on the silicon wafers 27 and 28.
In the SOI substrate having a structure sandwiched between
By the same steps as the steps up to (e), using the silicon dioxide film 26 as a mask, (10
A process of anisotropically etching the (0) plane to form a pyramidal etching hole 59 and then forming a silicon dioxide film 61 on the surface of the etching hole 59 of the silicon wafer 27 will be described.

FIG. 21B shows a step of forming the conductive coating 37. First, the silicon dioxide films 61, 26, 5
A base film 37a and a conductive coating 37 are formed on the surfaces of 7 and 30.

Thereafter, a photoresist mask 62 covering the surface of the conductive coating 37 is formed so as to cover the surface of the silicon dioxide film 61 in the etching hole 59 and form a wiring formation pattern. The conductive coating 37 and the underlying film 37a exposed from 62
Is etched. The base film 37a is formed by depositing chromium by 0.02 μm by, for example, a sputtering method or a vapor deposition method. The conductive coating 37 is formed by, for example, a sputtering method or a vapor deposition method on the base film 37a with gold.
It is formed by depositing 2 to 0.5 μm.

The base film 37a is made of chromium instead of chromium.
Titanium was deposited by sputtering or vapor deposition to 0.0
2 μm may be applied. Further, the conductive coating 37 is formed by depositing nickel on the gold film by about 1 to 2 μm by a sputtering method or an evaporation method, and plating nickel or copper or both on the surface by about 2 to 40 μm. Good.

As the conductive coating 37, noble metal such as gold or rhodium is deposited to a thickness of about 0.1 to 0.5 μm by a sputtering method or a vapor deposition method, and nickel is applied to the film.
A film having a thickness of about 2 μm and deposited by a sputtering method or a vapor deposition method may be used.

In FIG. 21C, a buffer layer 46 is provided between the surface of the photoresist mask 62 and the surface of the silicon dioxide film 30 deposited on the surface of the conductive coating 37 and the silicon substrate which is the supporting member 45. The process of filling and integrating is shown. As the buffer layer 46, for example, silicon rubber is used. Moreover, what was formed by apply | coating polyimide and heat-hardening can be used. Further, it is possible to use one formed by adhering a two-layer polyimide film in which the polyimide before thermosetting is applied to the lower surface of the thermosetting polyimide to the surface of the conductive coating 37 and heating and curing the same.

FIG. 21D shows a step of forming the protrusion 35. That is, first, the silicon dioxide film 31 and the silicon wafer 27 are removed by etching. After that, the silicon dioxide 61 covering the protrusion 35 is removed by etching, and then the base film 37a is removed by etching.

In this example, the surface of the conductive coating 37 having the shape of a quadrangular pyramid at the tip of the contact terminal is plated with gold, rhodium, or the like by about 0.2 to 2 μm to stabilize the electrical contact characteristics. Can be

FIG. 22 shows a method of manufacturing the silicon dioxide layer 26 having the protrusion 35 shown in FIG. 20 (h) into a cantilever structure. The description of the same steps as those shown in FIGS. 19 and 20 will be omitted.

FIG. 22A shows the above-mentioned FIG.
After the silicon dioxide layer 57 is formed by the same steps as the steps up to (c), a photoresist mask 63 is formed, and the silicon dioxide layer 26 is formed on the photoresist mask 6.
3, the silicon dioxide film 26 at the position 64 where the protrusion is formed, and the silicon dioxide layer 26 around the protrusion.
A process of removing the U-shape 65 by etching is shown. OFPR800 (Tokyo Ohka Kogyo Co., Ltd.) is applied as a photoresist, the silicon dioxide film 26 at the protrusion forming position 64 is squared, and OFPR800 (Tokyo Ohka Kogyo) on the surface of the silicon dioxide film 26 around the protrusion forming position is formed. , U-shaped exposure, NMD3 (Tokyo Ohka Kogyo)
Then, the photoresist mask 63 is formed by developing. Next, the silicon dioxide film 26 exposed from the photoresist mask 63 is etched by immersing it in a 1: 7 mixed solution of hydrofluoric acid and ammonium fluoride solution.

FIG. 22B shows a photoresist mask 63.
Is removed and the (100) plane of the silicon wafer 27 is anisotropically etched using the silicon dioxide film 26 as a mask to form a square pyramid etching hole 59, and at the same time, the silicon wafer 27 is etched into a U-shape 66. 3 shows a step of forming a conductive coating 37 on the etched surface of the silicon wafer 27 and the surfaces of the silicon dioxide films 26, 57 and 30. The conductive coating 37 may be formed of the same material as that shown in FIG. The etched surface of the silicon wafer 27 has a silicon dioxide film 61 formed by thermal oxidation in the same manner as in FIG.
The base film 37a and the conductive coating 37 may be formed.

In FIG. 22C, the surface of the square pyramid etching hole 59 is covered, the conductive coating 37 of the U-shaped etching surface 66 is not covered, and a wiring forming pattern is formed. The step of removing the conductive coating 37 after forming the photoresist mask 67 covering the surface of the conductive coating 37 will be described.

In FIG. 22D, a buffer layer 46 is provided between the surface of the photoresist mask 67 and the surface of the silicon dioxide film 30 deposited on the surface of the conductive coating 37 and the silicon substrate which is the supporting member 45. A process of removing the silicon dioxide film 29 and the silicon wafer 27 after sandwiching and integrating is shown. 22D 'is a plan view of FIG. 22D as seen from below.

FIG. 23 shows a part of the manufacturing process of the fifth embodiment of the connection device of the present invention. This embodiment can be basically manufactured by the same process as the embodiment shown in FIG. The difference is that in the example of FIG.
However, in the present embodiment, the protrusion support portion 43 is formed in a bridge structure, that is, a double-supported structure. Therefore, the difference in the process is that the silicon dioxide film 26 around the protrusion support 43 is formed.
Is a mask pattern that is etched into a U-shape or is etched into two parallel grooves. Therefore, the details of the manufacturing process have already been described including the example of FIG. 18, and thus the description thereof will be omitted here.

In this example, the flexibility is smaller than that of the cantilever structure, but the rigidity is larger than that of the cantilever structure. Therefore, this embodiment has an intermediate property between the cantilever structure and the structure in which the entire opening of the hole 28a (or 51a) is closed.

The embodiment shown in FIGS. 1 to 23 uses a square mask 68 of a silicon dioxide film as shown in FIGS. 24 (a) and 24 (b) to form a (100) plane of a silicon single crystal. Is anisotropically etched to form a contact terminal having a contact tip of a quadrangular pyramid. In this case, the square mask of the silicon dioxide film for forming the tip of the contact terminal is (10
In the (0) plane, as shown in FIG. 24A, the one side is arranged in an azimuth forming an angle of 45 degrees with the <110> direction, or
Alternatively, as shown in FIG.
It is desirable to arrange them in the direction parallel to the 0> direction.

In the examples described so far, a silicon wafer is used as the base material for forming the contact terminals. However, the present invention is not limited to this. Other crystals may be used as long as the crystals can form a hole having a sharp tip by anisotropic etching.

Anisotropic etching is required for the second base material forming the protrusions, for example, the silicon wafer 27. However, a first substrate, such as the silicon wafer 28 or 51, that is not directly used to form the protrusions.
Does not necessarily have to be anisotropic etching. Ordinary etching may be used. Therefore, the silicon wafers 28 and 51 that are the first base materials do not have to be single crystals. For example, it may be polycrystalline silicon or amorphous silicon.

Further, in the above description, the base material is a silicon wafer for the sake of convenience, but the present invention is not limited to the wafer manufactured. What is necessary is that the protrusion can be formed by the above-mentioned process.

Further, in each of the above-mentioned examples, all the contact terminals provided are those to which the wiring is connected and can be effectively used. However, it is possible to provide dummy contact terminals to which no wiring is connected and which function only as simple protrusions. That is, the dummy contact terminals can be appropriately arranged at the same height as the contact terminals, or at an appropriately set height, if necessary. As a result, it becomes easy to adjust the height variation of the contact terminals or the pressure applied to the contact target, and it is possible to improve the contact characteristics and reliability.

In the above-mentioned embodiments, the cantilever-shaped projection support portion 43 has a rectangular shape, but the invention is not limited to this. For example, a trapezoidal shape or a parallelogram shape can be used.

Further, in each of the above-described embodiments, the example in which the hole 28a or the hole 51a is provided for each protrusion 35 is shown.
The present invention is not limited to this. That is, one hole 28a or one hole 51a may be provided for each of the plurality of protrusions 35. That is, it is possible to adopt a structure in which one protrusion supporting portion supports a plurality of protrusions 35. In this case, the lead wiring 40 can be provided independently for each protrusion, and the contact terminal 42 can be formed for each protrusion 35. Next, those examples will be described. In addition,
One or two or more common electrodes may be provided for a plurality of protrusions supported by one protrusion supporting portion.

In the examples shown in FIGS. 35 (a)-(d), the silicon wafer 51 is used as the first base material and the second base material is used.
This is an example in which a silicon wafer 27 is used as the base material.

Each of these examples is shown in FIG.
The protrusion 35 is formed in the same manner as the step shown in FIG. Then, similarly to the steps shown in FIGS. 12E and 12F, the hole 51a is opened by anisotropic etching. However, in this example, the holes 51a are provided in a size such that the plurality of protrusions 35 are located on the opening surface thereof. Therefore, the mask is opened in that size.

The holes 51a are formed until the silicon dioxide film 26 is reached. Note that a part of the silicon wafer 51 may be left as shown in FIG.

Then, as shown in FIGS. 13 (g) and 13 (h), a conductive film 39 for covering the projection 35 and a lead-out wiring 40 are provided. Further, similarly to the example shown in FIGS. 14I to 14L, the support member 45 is fixed to the silicon substrate. This is the same as FIG. 14 (i)-(l) except for the size of the hole 51a, and therefore the description is omitted.

In the examples shown in FIGS. 36 (a)-(d), the silicon wafer 28 is used as the first substrate and the second substrate is used.
This is an example in which a silicon wafer 27 is used as the base material.

In all of these examples, the protrusion 35 is formed in the same manner as the steps shown in FIGS. 16 (a) and 16 (b). Then, as in the steps shown in FIGS. 12E and 12F, the hole 28a is opened by anisotropic etching. However, in this example, the holes 28a are provided in a size such that the plurality of protrusions 35 are located on the opening surface thereof. Therefore, the mask is opened in that size. Also, this hole 28a is
The process is performed until the silicon dioxide film 26 is reached. Note that a part of the silicon wafer 28 may be left as shown in FIG.

Then, as shown in FIGS. 13 (g) and 13 (h), a conductive film 39 for covering the projection 35 and a lead-out wiring 40 are provided. Further, similarly to the example shown in FIGS. 17C to 17F, the support member 45 is fixed to the silicon substrate. This is the same as FIG. 17 (c)-(f) except for the size of the hole 28a, so the description thereof will be omitted.

Next, some examples of how the protrusions 35 are arranged along the surface of the first substrate will be shown. In the example shown in FIG. 37A, the arrangement of the protrusions 35 of the contact terminals is made to correspond to each chip to be measured. That is, a plurality of protrusions 35 are arranged for each block 201 assumed on the silicon wafer 28 corresponding to the chip to be measured. In the example shown in FIG. 37B, a plurality of protrusions are provided for each of a plurality of chips to be measured (two examples are shown in the present embodiment) and for each block 201 assumed on the silicon wafer 28. The parts 35 are arranged. Further, in the example shown in FIG. 37 (c), a row-shaped block is assumed on the silicon wafer 28, and a plurality of protrusions are arranged in each block.

In each of the above-described embodiments, the case where the tip portion of the contact terminal 42 is a quadrangular pyramid or a truncated quadrangular pyramid has been described, but it goes without saying that a protrusion having another shape may be formed.

For example, as an example of forming the shape of an octagonal pyramid contact terminal tip portion, two examples are shown in FIG. 38 and FIG. 39 as a representative among the above embodiments.

FIG. 38 (i) shows an octagonal pyramidal protrusion 35 formed of a silicon dioxide film 26 and provided with a conductive film 39.
It is a cross-sectional view after the step of forming the cantilever-shaped projection support portion 43 supported on the surface. Note that FIG.
38. (i ′) is a plan view of (i) seen from below, FIG.
(I '') is a perspective view of (i) as seen from below. Here, the silicon single crystal 28 is anisotropically obtained by immersing the (100) plane of the silicon single crystal 28 in an etching solution containing, for example, potassium hydroxide, isopropanol, and water using the square silicon dioxide film as a mask. Etching is performed to form octagonal pyramidal protrusions 35, and contact terminal portions are formed by the same steps as those described with reference to FIGS. However, the etching conditions, that is, the component ratio of the etching liquid, the liquid temperature, and the etching rate are managed differently from them.

FIG. 39 (h) shows an octagonal pyramidal protrusion 35 formed of a silicon dioxide film 26 and provided with a conductive film 39.
Contact terminals 42 are formed on the surface of the silicon dioxide film 26.
3 is a cross-sectional view after the step of forming the. 39 (h ') is a plan view of (h) seen from below, FIG.
(H '') is a perspective view of (h) as seen from below. Here, the silicon single crystal 28 is anisotropically etched by immersing the (100) plane of the silicon single crystal 28 in an etching solution containing potassium hydroxide, isopropanol, and water using the square silicon dioxide film as a mask. Then, the octagonal pyramid-shaped protrusion 35 is formed, and the contact terminal portion is formed in the same process as the process described with reference to FIGS. 12 and 13.

Next, a specific example of use of the contact device described in each of the above embodiments will be described. An example of use is a semiconductor inspection device. Also, T
It can also be applied to an inspection device for an FT type liquid crystal display.

FIG. 25 is an explanatory view showing the main part of an inspection apparatus which is an embodiment using the connection device of the present invention.

In this embodiment, the inspection device is constructed as a wafer prober in the manufacture of semiconductor devices. This inspection apparatus includes a sample support system 1 that supports an object to be inspected.
20, a probe system 100 that contacts an object to be inspected to exchange electrical signals, a drive control system 150 that controls the operation of the sample support system 120, and a tester 170 that performs measurement. The semiconductor wafer 1 is used as the object to be inspected. A plurality of electrodes 1a as external connection electrodes are formed on the surface of the semiconductor wafer 1.

The sample support system 120 includes the sample table 12 on which the semiconductor wafer 1 is removably mounted and which is provided substantially horizontally.
2, a vertically arranged lifting shaft 124 that supports the sample table 122, a lifting drive unit 125 that drives the lifting shaft 124 up and down, and an X- that supports the lifting drive unit 125.
And a Y stage 127. XY stage 12
7 is fixed on the housing 126. Lifting drive unit 125
Is, for example, a stepping motor. XY
By combining the movement operation of the stage 127 in the horizontal plane and the vertical movement of the elevation drive unit 125, the positioning operation of the sample table 122 in the horizontal and vertical directions is performed. Further, the sample table 122 is provided with a rotation mechanism (not shown) so that the sample table 122 can be rotationally displaced in a horizontal plane.

Above the sample table 122, the probe system 10 is provided.
0 is placed. That is, the connection device 100a and the wiring board 70 are arranged in a posture of facing the sample table 122 in parallel.
Is provided. In this connecting device 100a, a terminal array 20 having a plurality of contact terminals 42 is provided at a position facing the object to be inspected. As the terminal array 20, the one shown in FIG. 1 described above is used. That is, the terminal array 20 includes the silicon wafer 28, the contact terminals 42 supported by the silicon wafer 28, the buffer layer 46, and the support member 45.
Are integrally provided. Each contact terminal 42
Is connected to the connection terminal 70b provided on the wiring board 70 through the lower electrode 73 of the wiring board 70 and the internal wiring 70a through the extension wiring 72 provided on the extension wiring sheet 71 of the connection device 100a. It is connected. In this embodiment, the connection terminal 70b is a coaxial connector. It is connected to the tester 170 via a cable 171 connected to the connection terminal 70b.

The connecting device used here is shown in FIG.
The structure is not limited to that shown in. For example, the structure shown in FIGS. 2, 3 and 4 can be used.

The drive control system 150 is connected to the tester 170 via a cable 172. Further, the drive control system 150 sends a control signal to the actuator of each drive unit of the sample support system 120 to control the operation thereof. That is, the drive control system 150 includes a computer inside,
The operation of the sample support system 120 is controlled according to the progress information of the test operation of the tester 170 transmitted via the cable 172. In addition, the drive control system 150 includes an operation unit 151.
And receives an input of various instructions regarding drive control, for example, an instruction of a manual operation.

The operation of the inspection apparatus of this embodiment will be described below. The semiconductor wafer 1 is fixed on the sample table 122, and the electrode 1a formed on the semiconductor wafer 1 is connected to the connection device 10 by using the XY stage 127 and the rotating mechanism.
Adjustment is performed to position the contact terminal 42 directly below the contact terminal 42 formed at 0a. Then, the drive control system 150 actuates the elevating / lowering drive unit 125 to raise the sample stage 122 to a predetermined height so that the tips of the plurality of contact terminals 42 are respectively connected to the plurality of electrodes 1a in the target semiconductor element. Contact with a predetermined pressure. The operation up to this point is executed by the drive control system 150 according to the operation instruction from the operation unit 151. It should be noted that these adjustments such as positioning may be automatically performed. For example, it can be carried out by marking a reference position mark on the semiconductor wafer 1 in advance and reading it with a reading device to set the origin of the coordinates. In this case, the position of the electrode is known in the drive control system 150 by receiving the design data in advance.

In this state, the cable 171 and the wiring board 7
0, the extension wiring sheet 71, and the contact terminal 42, and the semiconductor element formed on the semiconductor wafer 1 and the tester 1
The operating power and the operation test signal are exchanged with the semiconductor device 70 to determine whether the operating characteristics of the semiconductor element are acceptable or not.
The above-described series of test operations are performed on each of the plurality of semiconductor elements formed on the semiconductor wafer 1 to determine whether or not the operation characteristics are available.

Next, an example of the inspection device in the burn-in process of the semiconductor device, which is an embodiment using the connection device of the present invention, will be described.

FIG. 26 is a perspective view showing an essential part of an inspection apparatus in a burn-in process of a semiconductor element which is an embodiment using the connection device of the present invention, and FIG. 27 is a cross section of the semiconductor element inspection apparatus for burn-in. It is a figure.

The present embodiment is configured as a wafer prober for conducting characteristic inspection of a semiconductor element by applying electric and thermal stress to the semiconductor element in a wafer state at a high temperature.

Further, in this embodiment, the characteristic inspection can be performed in a state where a plurality of wafers 1 are put in a constant temperature bath (not shown) at a time.

That is, in this embodiment, as shown in FIG. 27, a mother board 181 mounted vertically to a support tool 190 placed in a constant temperature bath (not shown) and a mother board 181 mounted perpendicularly thereto, that is, the support tool 190. A plurality of individual probe systems 180 mounted on the motherboard 181 in parallel with each other
Composed of and.

The mother board 181 has a connector 183 provided for each individual probe system 180, and a cable 182 communicating with the connector 183 via the mother board 181. Although not shown in the present embodiment, the cable 182 is connected to a tester similar to the tester 170 shown in FIG. 25.

The individual probe system 180 is provided for each object to be inspected. The individual probe system 180 includes the connection device 100a described above, the wiring substrate 70 to which the connection device is fixed, the wafer support substrate 185 that supports the semiconductor wafer 1 as the inspection object, and the wafer support substrate 185. A support board 184 for mounting the individual probe system itself on the mother board 181;
Holding substrate 1 for bringing 0a into contact with semiconductor wafer 1
And 86.

Each part above the wafer support substrate 185 has the structure shown in FIG. That is, the wafer support substrate 185 is formed of, for example, a metal plate, and has a recess 185a for detachably housing the semiconductor wafer 1, and
It has a knock pin 187 for positioning.

As described above, the connecting device 100a is composed of the terminal array 20 provided with the contact terminals 42, the buffer layer 46 and the supporting member 45, and the extension wiring sheet 71. The connection device 100a is mounted on the wiring board 70, and the wiring drawn from each contact terminal 42 is connected to the connector terminal 70c via the wiring 70d. The connector terminal 70c is adapted to fit with the connector 183. In this example, the connection device 100
Although what is shown in FIG. 1 is used as a, it is not limited to this. For example, the ones shown in FIGS. 2, 3, and 4 can be used.

A pressing board 186 is mounted above the connecting device 100a. The pressing board 186 is formed in a channel shape, and the wiring board 70 is housed in the channel 186a. In addition, a hole 188 to be fitted with the knock pin 187 is provided in the peripheral portion of the pressing board 186.
Is provided.

Note that, in FIG. 27, a plurality of individual probe systems 180 are provided on the mother board 18 in parallel with the support 190.
Although the example of attaching to No. 1 is shown, the present invention is not limited to this. That is, each individual probe system 180 may be directly connected to the tester.

Next, the measurement operation of this embodiment will be described.

In the recess 185a of the wafer supporting substrate 185,
The semiconductor wafer 1 is fixed and the knock pin 187 is used.
Each electrode formed on the semiconductor wafer 1 is connected to the connecting device 10
Positioned directly under each contact terminal 42 formed on the substrate 0a, the tip of each of the plurality of contact terminals 42 is brought into contact with each of the target electrodes of the plurality of electrodes of the semiconductor element with a predetermined pressure. In this state, the cable 182, the mother board 181, the connector 183, the wiring board 70, the extension wiring 72 for drawing (not shown in FIG. 26) provided on the extension wiring sheet 71 (see FIG. 1), and the contact terminal 4
The operation power and the operation test signal are exchanged between the semiconductor element formed on the semiconductor wafer 1 and the tester via the controller 2 to determine whether or not the operation characteristic of the semiconductor element is appropriate. The above-described series of operations is performed for each of the semiconductor wafers 1 mounted on the wafer supporting substrate 185 fixed on the mother board 181 fixed on the supporting member 190 installed in the thermostat (not shown), and the operation is performed. Whether the characteristic is valid or not is determined.

When the contact terminals of the connection device are brought into contact with the electrodes, the contact terminals and the electrodes are connected in a one-to-one correspondence in the above embodiment, but the invention is not limited to this. That is, a plurality of contact terminals may be brought into contact with one electrode. This ensures more reliable contact.

In each of the above embodiments, the lead-out wiring 40 and the lead-out extended wiring 72 are treated as ordinary single-line wirings, but the present invention is not limited to this. By providing a ground layer, each lead-out wiring 40 and lead-out extended wiring 72 may be configured as a microstrip line. As a result, it becomes possible to perform the characteristic inspection of the semiconductor element such as the DC inspection and the high frequency region, for example, the AC inspection up to several GHz band.

Connection device 100a capable of performing the above-mentioned characteristic inspection
By using, for example, the individual probe system 180 shown in FIG. 26 and the semiconductor device inspecting apparatus shown in FIG. It can be used as a wafer prober for inspection. In this case, even if the transmission and reception of the operating power and the operation test signal between the semiconductor element and the tester 170 are different for the characteristic inspection and the burn-in, the signal from the tester is switched or the mother board is used. Once the wafer is mounted on the individual probe system 180 by exchanging the cords, until a series of inspection items is completed,
It is possible to carry out the inspection with the individual probe system 180 attached.

According to the embodiments described above, anisotropic etching can form protrusions of uniform height and shape, and the protrusions can form contact terminals. In addition, a hole is formed behind the protrusion to increase the flexibility of the protrusion support,
Good contact with the inspection target. In addition, the contact terminal,
The photolithography technique enables high-density and high-precision formation. Moreover, a large number of contact terminals can be collectively formed with high positional accuracy.

Although each of the embodiments described above uses a silicon wafer, the present invention is not limited to this. Other crystalline materials can also be used.

In each of the embodiments shown in FIGS. 1, 2, 3 and 4, the connection device is mounted on the wiring board via the supporting member 45, but the buffer layer is interposed not via the supporting member. The connection device may be fixed to the wiring board by means of this.

In the above embodiment, the cantilever-shaped contact terminal is composed of the rectangular protrusion support portion 43, but the planar shape of this protrusion support portion is not limited to a rectangle. For example, it may have a trapezoidal shape. It can also be formed in a U shape.

[0199]

According to the present invention, the contact terminals of the connecting device can be multi-pointed and highly densified, and in the case of multi-terminals, the tip portions can be densely and accurately formed on the electrode pad portion of the wiring board. Since sharpened connection terminals can be collectively formed, there is an effect of significantly improving the assembling property of the connection device.

Further, according to the present invention, the length of the probe can be shortened, and high frequencies can be handled.

Furthermore, the variation in the height direction of the connection terminals is
(1) by anisotropic etching of the (100) plane of silicon
By forming the shape of a quadrangular pyramid surrounded by the (11) plane, it is possible to achieve a level close to the dimensional accuracy of the photoresist mask pattern, like the lateral variation. Further, by using the SOI substrate, since the silicon dioxide layer serves as a stopper during anisotropic etching, it is easy to control the anisotropic etching process. This has the effect of significantly improving the positional accuracy of the tip of the connection terminal. Moreover, since it is formed by a thin film process, it can be manufactured with high processing accuracy and without requiring fine assembly work.

Further, in the connecting device in which the connecting terminal is brought into contact with the opposing electrode by the elastic force of the buffer layer or the cantilever structure according to the present invention, the variation in the distance between the contact terminal and the electrode is absorbed. It is possible to apply even pressure to each contact terminal with a small load. As a result, all the pins can be reliably contacted. Moreover, it is possible to prevent an excessive load from being applied to the inspection object.

Further, the silicon and silicon dioxide layers have heat resistance, and a burn-in test (up to 200 ° C.) is possible. Further, by applying the LSI manufacturing process to a silicon single crystal substrate which is a constituent material of a contact device, a high-frequency characteristic is improved by forming a capacitor or a resistor in the vicinity of the contact terminal or performing impedance matching. You can Further, by forming an active element near the contact terminal to provide an inspection function, it is possible to reduce the load on the tester for inspection.

[Brief description of drawings]

FIG. 1 is an end view showing a main part of a configuration of a first embodiment of a connection device of the present invention.

FIG. 2 is an end view showing the main part of the configuration of the second embodiment of the connection device of the present invention.

FIG. 3 is an end view showing the main part of the configuration of a third embodiment of the connection device of the present invention.

FIG. 4 is an end view showing the main part of the configuration of a fourth embodiment of the connection device of the present invention.

5 (a) to 5 (f) are end views showing the former stage of the steps of one embodiment of the manufacturing process for forming the connecting device of the first embodiment.

6 (g)-(i ″) show the latter stage of the steps of the manufacturing process shown in FIG. 5, FIG. 6 (g) is an end view,
6 (g ') is a plan view showing the contact terminal, FIG. 6 (h),
6 (i) is an end view, FIG. 6 (i ') is a plan view showing a contact terminal, and FIG. 6 (i'') is a perspective view.

FIG. 7 is an end view showing the detailed structure of the configuration of the first embodiment of the connection device of the present invention.

8 (a)-(c) and 8 (d) are end views showing the preceding stage of the steps of another embodiment of the manufacturing process for forming the connecting device of the present invention, and FIG. It is a top view of a contact terminal.

9 (e) and 9 (e ″) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connecting device of the present invention, and FIG. 9 (e ′) is a contact terminal. FIG.

10 (a)-(d) are end views showing steps of another embodiment of the manufacturing process for forming the connecting device according to the present invention, and FIG. 10 (d ') is a main part of the connecting device. It is a perspective view.

11 (a)-(d) are end views showing another embodiment of the manufacturing process for forming the connecting device according to the present invention, and FIG. 11 (d ') is a perspective view of the main part of the connecting device. Is.

12 (a) to 12 (f ') are end views showing the preceding stage of the steps of another embodiment of the manufacturing process for forming the connecting device according to the present invention.

13 (g) and 13 (h) are end views showing interruption of steps of another embodiment of the manufacturing process for forming the connecting device according to the present invention, FIGS. 13 (h ') and (h'). ')
FIG. 4 is a plan view showing an example of the structure of a contact terminal formed by this method.

14 (i)-(l) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

15 (a) to 15 (d) are end views showing another embodiment of the manufacturing process for forming the connection device according to the present invention.

16 (a) and 16 (b) are end views showing the preceding stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, FIGS. 16 (b ') and 16 (b'). ')
FIG. 4 is a plan view of a contact terminal formed by this method.

17 (c)-(f) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

18 (a), (b) and (c) are end views showing steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 18 (b ') is It is a top view which shows the structure of the Celsius terminal formed by this method.

19 (a)-(f) are end views showing the preceding stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

20 (g)-(h) are end views showing the latter stages of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

21A to 21D are end views showing steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

22 (a) to 22 (d) are end views showing steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 22 (d ') is formed by this method. It is a top view of the contact terminal made into.

23 (a), (b) and (c) are end views showing the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. It is a top view of a contact terminal formed by this method.

24 (a)-(b) are plan views showing an embodiment for forming a mask of silicon dioxide for forming contact terminals of the connecting device according to the present invention.

FIG. 25 is a configuration diagram showing an outline of a drive unit of a semiconductor element inspection device equipped with the connection device of the present invention.

FIG. 26 is a perspective view showing a main part of a semiconductor device inspecting apparatus for burn-in in which the connecting device of the present invention is mounted.

FIG. 27 is a cross-sectional view of a semiconductor device inspection apparatus for burn-in.

28A is a perspective view of a wafer and FIG.
(B) is a perspective view of a semiconductor element.

FIG. 29 is a cross-sectional view of a conventional inspection probe.

FIG. 30 is a plan view of a conventional inspection probe.

FIG. 31 is a perspective view showing a semiconductor element having solder balls on electrodes.

FIG. 32 is a perspective view showing a mounted state of a semiconductor element which is solder-melted and connected.

FIG. 33 is a cross-sectional view of a main portion of a conventional semiconductor device inspection apparatus using bumps formed by plating.

34 is a perspective view showing a bump portion formed by plating of FIG. 33. FIG.

35 (a)-(d) are end views showing an example in which holes are formed in a size such that a plurality of protrusions are located on an opening surface of the connecting device according to the present invention. is there.

36 (a) to (d) are end faces showing another example in which a plurality of protrusions are formed with holes in a size such that they are located on the opening face in the connecting device according to the present invention. It is a figure.

37 (a) to (c) are plan views showing an example of how a plurality of protrusions are arranged in the connection device according to the present invention.

38 (i) is an end view showing the latter stage of the steps of the manufacturing process for forming the connecting device of the first embodiment, and FIG. 38 (i ') is a plan view showing contact terminals.
(I ″) is a perspective view.

39 (i) is an end view showing the latter stage of the steps of the manufacturing process for forming the connection device of the second embodiment, and FIG. 39 (i ') is a plan view showing the contact terminal.
(I ″) is a perspective view.

[Explanation of symbols]

1 ... Wafer, 1a ... Electrode, 2 ... Semiconductor element, 3 ... Electrode,
4 ... Probe card, 5 ... Probe, 6 ... Solder bump, 7 ... Wiring board, 8 ... Electrode, 10 ... Dielectric film, 11 ...
Wiring, 12 ... Via, 13 ... Bump, 14 ... Wiring board, 1
5 ... Leaf spring, 20 ... Terminal array, 26 ... Silicon dioxide, 26a ... Hole, 27 ... Silicon wafer (second base material), 28 ... Silicon wafer (first base material), 28a ...
Holes, 29, 30 ... Silicon dioxide film, 31, 32 ... Photoresist mask, 33 ... Silicon dioxide film, 34 ... Projections, 35 ... Projections, 36 ... Silicon dioxide film (insulating film), 37 ... Conductive coating, 37a ... Base film, 38 ... Photoresist mask, 39 ... Conductive film, 39a ... Chrome film, 3
9b ... Gold film, 40 ... Lead-out wiring, 41 ... Photoresist mask, 42 ... Contact terminal, 43 ... Projection supporting section, 44 ...
Plating film, 45 ... Support member (silicon substrate), 46 ... Buffer layer, 47 ... Silicon dioxide, 48 ... Silicon single crystal,
49, 50 ... Silicon dioxide film, 51 ... Silicon wafer, 51a ... Hole, 52, 53 ... Photoresist mask, 5
4 ... Insulating film, 55, 56 ... Photoresist mask, 57 ...
Silicon dioxide film, 58 ... Photoresist mask, 59 ...
Etching hole, 60 ... Photoresist mask, 61 ... Silicon dioxide film, 62, 63 ... Photoresist mask, 64
... Protrusion forming position, 65 ... U-shaped etching position, 66 ... U-shaped etching, 67 ... Photoresist mask, 68 ... Square mask, 70 ... Wiring board, 70
a ... internal wiring, 70b ... connecting terminal, 70c ... connector terminal, 70d ... wiring, 71 ... extended wiring sheet, 71a ... insulating film, 72 ... drawing extended wiring, 73 ... electrode,
74 ... Solder, 75 ... Contact terminal, 76 ... Connection terminal, 76
a ... contact terminal, 77 ... drawing wiring, 78 ... insulating material, 79 ... connection terminal, 80 ... via, 100 ... probe system, 100a ... connection device, 120 ... sample support system, 122
... sample table, 124 ... lifting shaft, 125 ... lifting drive unit, 12
6 ... Housing | casing 127 ... XY stage, 150 ... Drive control system, 151 ... Operation part, 170 ... Tester, 171,172
… Cable, 180… Individual probe system, 181… Mother
Board, 182 ... Cable, 183 ... Connector, 184
... Support board, 185 ... Wafer support substrate, 185a ... Wafer support substrate recessed portion, 186 ... Retaining substrate, 186a ... Channel, 187 ... Knock pin, 188 ... Hole fitted with knock pin, 190 ... .

─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] July 20, 1995

[Procedure Amendment 1]

[Document name to be amended] Statement

[Name of item to be corrected] Brief description of the drawing

[Correction method] Change

[Correction content]

[Brief description of drawings]

FIG. 1 is an end view showing a main part of a configuration of a first embodiment of a connection device of the present invention.

FIG. 2 is an end view showing the main part of the configuration of the second embodiment of the connection device of the present invention.

FIG. 3 is an end view showing the main part of the configuration of a third embodiment of the connection device of the present invention.

FIG. 4 is an end view showing the main part of the configuration of a fourth embodiment of the connection device of the present invention.

5 (a) to 5 (f) are end views showing the former stage of the steps of one embodiment of the manufacturing process for forming the connecting device of the first embodiment.

6 (g)-(i 2 ) show the latter stage of the steps of the manufacturing process shown in FIG. 5, FIG. 6 (g) is an end view, and FIG. 6 (g 1 ) shows a contact terminal. Plan view, FIG. 6 (h),
6 (i) is an end view, FIG. 6 (i 1 ) is a plan view showing a contact terminal, and FIG. 6 (i 2 ) is a perspective view.

FIG. 7 is an end view showing the detailed structure of the configuration of the first embodiment of the connection device of the present invention.

[8] FIG. 8 (a) - (c) and (d) are end views showing the front of another embodiment of a step of the manufacturing process of forming the connection device of the present invention, FIG. 8 (c 1) is It is a top view of a contact terminal.

9 (e) and 9 (e 2 ) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device of the present invention, and FIG. 9 (e 1 ) shows the contact terminal. It is a top view.

10 (a) to 10 (d) are end views showing steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 10 (d 1 ) is a main part of the connection device. It is a perspective view.

11A to 11D are end views showing another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 11D 1 is a perspective view of the main part of the connection device. Is.

FIG. 12 (a)-(f 1 ) is an end view showing the preceding stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

[13] FIG. 13 (g) and (h) is an end view showing the interruption of the process of another embodiment of a manufacturing process for forming a connecting device according to the present invention, FIG. 13 (h 1) and (h 2 )
FIG. 4 is a plan view showing an example of the structure of a contact terminal formed by this method.

14 (i)-(l) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

15 (a) to 15 (d) are end views showing another embodiment of the manufacturing process for forming the connection device according to the present invention.

[16] FIG. 16 (a) and (b) is an end view showing the front of a step of another embodiment of a manufacturing process for forming a connecting device according to the present invention, FIG. 16 (b 1) and (b 2 )
FIG. 4 is a plan view of a contact terminal formed by this method.

17 (c)-(f) are end views showing the latter stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

[18] FIG. 18 (a), (b) and (c), end view showing the steps of another embodiment of a manufacturing process for forming a connecting device according to the present invention, FIG. 18 (b 1) is It is a top view which shows the structure of the Celsius terminal formed by this method.

19 (a)-(f) are end views showing the preceding stage of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

20 (g)-(h) are end views showing the latter stages of the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

21A to 21D are end views showing steps of another embodiment of the manufacturing process for forming the connection device according to the present invention.

22 (a) to 22 (d) are end views showing steps of another embodiment of the manufacturing process for forming the connecting device according to the present invention, and FIG. 22 (d 1 ) is formed by this method. It is a top view of the contact terminal made into.

[23] FIG. 23 (a), (b) and (c), end view showing the steps of another embodiment of a manufacturing process for forming a connecting device according to the present invention, FIG. 23 (b 1) is It is a top view of a contact terminal formed by this method.

24 (a)-(b) are plan views showing an embodiment for forming a mask of silicon dioxide for forming contact terminals of the connecting device according to the present invention.

FIG. 25 is a configuration diagram showing an outline of a drive unit of a semiconductor element inspection device equipped with the connection device of the present invention.

FIG. 26 is a perspective view showing a main part of a semiconductor device inspecting apparatus for burn-in in which the connecting device of the present invention is mounted.

FIG. 27 is a cross-sectional view of a semiconductor device inspection apparatus for burn-in.

28A is a perspective view of a wafer and FIG.
(B) is a perspective view of a semiconductor element.

FIG. 29 is a cross-sectional view of a conventional inspection probe.

FIG. 30 is a plan view of a conventional inspection probe.

FIG. 31 is a perspective view showing a semiconductor element having solder balls on electrodes.

FIG. 32 is a perspective view showing a mounted state of a semiconductor element which is solder-melted and connected.

FIG. 33 is a cross-sectional view of a main portion of a conventional semiconductor device inspection apparatus using bumps formed by plating.

34 is a perspective view showing a bump portion formed by plating of FIG. 33. FIG.

35 (a)-(d) are end views showing an example in which holes are formed in a size such that a plurality of protrusions are located on an opening surface of the connecting device according to the present invention. is there.

36 (a) to (d) are end faces showing another example in which a plurality of protrusions are formed with holes in a size such that they are located on the opening face in the connecting device according to the present invention. It is a figure.

37 (a) to (c) are plan views showing an example of how a plurality of protrusions are arranged in the connection device according to the present invention.

38 (i) is an end view showing the latter stage of the steps of the manufacturing process for forming the connecting device of the first embodiment, FIG. 38 (i 1 ) is a plan view showing contact terminals, and FIG. i 2 )
Is a perspective view.

39 (i) is an end view showing the latter stage of the steps of the manufacturing process for forming the connection device of the second embodiment, FIG. 39 (i 1 ) is a plan view showing the contact terminals, and FIG. i 2 )
Is a perspective view.

[Description of Reference Signs] 1 ... Wafer, 1a ... Electrode, 2 ... Semiconductor element, 3 ... Electrode,
4 ... Probe card, 5 ... Probe, 6 ... Solder bump, 7 ... Wiring board, 8 ... Electrode, 10 ... Dielectric film, 11 ...
Wiring, 12 ... Via, 13 ... Bump, 14 ... Wiring board, 1
5 ... Leaf spring, 20 ... Terminal array, 26 ... Silicon dioxide, 26a ... Hole, 27 ... Silicon wafer (second base material), 28 ... Silicon wafer (first base material), 28a ...
Holes, 29, 30 ... Silicon dioxide film, 31, 32 ... Photoresist mask, 33 ... Silicon dioxide film, 34 ... Projections, 35 ... Projections, 36 ... Silicon dioxide film (insulating film), 37 ... Conductive coating, 37a ... Base film, 38 ... Photoresist mask, 39 ... Conductive film, 39a ... Chrome film, 3
9b ... Gold film, 40 ... Lead-out wiring, 41 ... Photoresist mask, 42 ... Contact terminal, 43 ... Projection supporting section, 44 ...
Plating film, 45 ... Support member (silicon substrate), 46 ... Buffer layer, 47 ... Silicon dioxide, 48 ... Silicon single crystal,
49, 50 ... Silicon dioxide film, 51 ... Silicon wafer, 51a ... Hole, 52, 53 ... Photoresist mask, 5
4 ... Insulating film, 55, 56 ... Photoresist mask, 57 ...
Silicon dioxide film, 58 ... Photoresist mask, 59 ...
Etching hole, 60 ... Photoresist mask, 61 ... Silicon dioxide film, 62, 63 ... Photoresist mask, 64
... Protrusion forming position, 65 ... U-shaped etching position, 66 ... U-shaped etching, 67 ... Photoresist mask, 68 ... Square mask, 70 ... Wiring board, 70
a ... internal wiring, 70b ... connecting terminal, 70c ... connector terminal, 70d ... wiring, 71 ... extended wiring sheet, 71a ... insulating film, 72 ... drawing extended wiring, 73 ... electrode,
74 ... Solder, 75 ... Contact terminal, 76 ... Connection terminal, 76
a ... contact terminal, 77 ... drawing wiring, 78 ... insulating material, 79 ... connection terminal, 80 ... via, 100 ... probe system, 100a ... connection device, 120 ... sample support system, 122
... sample table, 124 ... lifting shaft, 125 ... lifting drive unit, 12
6 ... Housing | casing 127 ... XY stage, 150 ... Drive control system, 151 ... Operation part, 170 ... Tester, 171,172
… Cable, 180… Individual probe system, 181… Mother
Board, 182 ... Cable, 183 ... Connector, 184
... Support board, 185 ... Wafer support substrate, 185a ... Wafer support substrate recessed portion, 186 ... Retaining substrate, 186a ... Channel, 187 ... Knock pin, 188 ... Hole fitted with knock pin, 190 ... .

[Procedure Amendment 2]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 5

[Correction method] Change

[Correction content]

[Figure 5]

[Procedure 3]

[Document name to be corrected] Drawing

[Name of item to be corrected] Figure 6

[Correction method] Change

[Correction content]

[Figure 6]

[Procedure amendment 4]

[Document name to be corrected] Drawing

[Correction target item name] Figure 8

[Correction method] Change

[Correction content]

[Figure 8]

[Procedure Amendment 5]

[Document name to be corrected] Drawing

[Correction target item name] Figure 9

[Correction method] Change

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[Figure 9]

[Procedure correction 6]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 10

[Correction method] Change

[Correction content]

[Figure 10]

[Procedure Amendment 7]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 11

[Correction method] Change

[Correction content]

FIG. 11

[Procedure Amendment 8]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 12

[Correction method] Change

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[Fig. 12]

[Procedure Amendment 9]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 13

[Correction method] Change

[Correction content]

[Fig. 13]

[Procedure Amendment 10]

[Document name to be corrected] Drawing

[Correction target item name] Fig. 16

[Correction method] Change

[Correction content]

FIG. 16

[Procedure Amendment 11]

[Document name to be corrected] Drawing

[Name of item to be corrected] Fig. 18

[Correction method] Change

[Correction content]

FIG. 18

[Procedure Amendment 12]

[Document name to be corrected] Drawing

[Correction target item name] Fig. 22

[Correction method] Change

[Correction content]

FIG. 22

[Procedure Amendment 13]

[Document name to be corrected] Drawing

[Correction target item name] Fig. 23

[Correction method] Change

[Correction content]

FIG. 23

[Procedure Amendment 14]

[Document name to be corrected] Drawing

[Correction target item name] Fig. 38

[Correction method] Change

[Correction content]

FIG. 38

[Procedure Amendment 15]

[Document name to be corrected] Drawing

[Correction item name] Fig. 39

[Correction method] Change

[Correction content]

FIG. 39 ─────────────────────────────────────────────────── ───

[Procedure amendment]

[Submission date] July 21, 1995

[Procedure Amendment 1]

[Document name to be amended] Statement

[Correction target item name] 0050

[Correction method] Change

[Correction content]

FIG. 23 (b 1 ) shows the essential parts of the fifth embodiment of the present invention. The connecting device shown in FIG. 23 (b 1 ) has the same basic structure as that of the third embodiment shown in FIG. The difference is that the projection support portion 43 is supported by two opposite sides of the peripheral edge of the opening of the hole 26a, and the contact terminal 76a has a bridge structure. Details of the contact terminal 76a of this embodiment will be described later.

[Procedure Amendment 2]

[Document name to be amended] Statement

[Correction target item name] 0063

[Correction method] Change

[Correction content]

In FIG. 5D, anisotropic etching is performed to form protrusions 34 having sharp tips, and then silicon dioxide film 36 is formed on the surfaces of the protrusions 34 by thermal oxidation.
The process of forming the protrusion 36 will be described. The oxidation of the protrusions 34 made of silicon is performed, for example, by thermal oxidation in wet oxygen. As a result, the silicon dioxide film 36 is formed to a thickness of about 0.5 μm. Note that FIG. 5D 1 corresponds to FIG.
It is a top view when the projection part 35 of (d) is seen from lower part.

[Procedure 3]

[Document name to be amended] Statement

[Correction target item name] 0066

[Correction method] Change

[Correction content]

FIGS. 6G, 6H and 6I show step by step the steps of forming the projection supporting portion 43 having a cantilever structure. That is, here, the photoresist mask 41 is removed, and the remaining silicon dioxide film 26 is used as a mask to etch the (100) plane of the silicon single crystal 28 through the groove 26a. As a result, the protrusion 3 formed of the silicon dioxide film 26 and provided with the conductive film 39.
Thus, a cantilever-shaped projection support portion 43 that supports 5 on its surface is obtained. 6 (g 1 ) is a plan view of (g) viewed from below, and FIG. 6 (i 1 ) is a plan view of (i) viewed from below,
FIG. 6 (i 2 ) is a perspective view of (i) viewed from below.

[Procedure amendment 4]

[Document name to be amended] Statement

[Correction target item name] 0073

[Correction method] Change

[Correction content]

FIGS. 8C, 8D and 9E show
By removing the photoresist mask 41 and etching the (100) plane of the silicon single crystal 28 until the silicon dioxide layer 47 is exposed, a projection having a cantilever structure of the silicon dioxide film 26 having a projection 35 on the surface is formed. The step of forming the support portion 43 is shown in stages. Note that FIG. 8C 1 is a plan view of FIG. 8C viewed from below, and FIG.
(E 1 ) is a plan view of (e) seen from below, and FIG. 9 (e 2 ).
[Fig. 3] is a perspective view of (e) viewed from below.

[Procedure Amendment 5]

[Document name to be amended] Statement

[Correction target item name] 0078

[Correction method] Change

[Correction content]

10 (b), 10 (c) and 10 (d), the photoresist mask 41 is removed and the silicon single crystal 2 shown in FIG.
By etching the (100) plane of No. 8
7A is a stepwise view showing the step of forming a and the step of forming the projection support portion 43 of the silicon dioxide film 26 having a cantilever structure. Note that FIG. 10D 1 is a perspective view of FIG. 10D as seen from below. The silicon single crystal 28 is etched, for example, by immersing it in an etching solution containing ethylenediamine, pyrocatechol and water as its components. Instead of this solution, an etching solution containing potassium hydroxide and water may be used. Alternatively, an etching solution containing potassium hydroxide, isopropanol and water may be used.

[Procedure correction 6]

[Document name to be amended] Statement

[Correction target item name] 0084

[Correction method] Change

[Correction content]

FIG. 11D shows a step of forming the projection supporting portion 43 having a cantilever structure. That is, in this step, the hole (28a) is formed by etching the (100) plane of the silicon single crystal 28 by the same steps as the steps shown in FIGS. 5 (e) to 6 (i). As a result, the protrusion supporting portion 43 having the cantilever structure of the silicon dioxide film 49, which has the protrusion 35 having a sharp tip on the surface, is formed. Note that FIG. 11 (d 1 ) is a perspective view of (d) as seen from below.

[Procedure Amendment 7]

[Document name to be amended] Statement

[Correction target item name] 0094

[Correction method] Change

[Correction content]

As shown in FIG. 12 (f 1 ), a film formed of the silicon dioxide layer 26 and the silicon wafer 51 with the (110) plane of the silicon wafer 51 slightly left on the surface of the silicon dioxide layer 26. Thus, the protrusion supporting portion 43 can be formed. In this case, the silicon wafer 51
The strength and flexibility of the protrusion support portion 43 may be adjusted by the thickness of the. The subsequent process is shown in FIG.
Since it is the same as the step following (f), the description thereof will be omitted.

[Procedure Amendment 8]

[Document name to be amended] Statement

[Correction target item name] 0097

[Correction method] Change

[Correction content]

In FIG. 13 (h), the conductive coating 37 is etched by the photoresist mask 38, and the projection 3 is formed.
The process of forming the conductive film 39 and the wiring 40 of No. 5 is shown.
13 (h 1 ) and (h 2 ) are plan views of (h) viewed from below. Here, FIG. (H 1 ) is an example in which the conductive film 39 is formed on a part of the portion where the silicon wafer 51 is anisotropically etched down to the silicon dioxide layer 26 on which the protrusion 35 is formed. (H 2 ) is an example in which the conductive film 39 is formed so as to cover the entire anisotropically etched portion.

[Procedure Amendment 9]

[Document name to be amended] Statement

[Correction target item name] 0110

[Correction method] Change

[Correction content]

Note that this manufacturing method can form a flat portion of an arbitrary size at the tip of the protrusion 34, as compared with the manufacturing method of FIGS. This method is not limited to the substrate structure shown in FIG. 15, and is effective in the step of forming the protrusion by anisotropically etching the silicon single crystal using the silicon dioxide film as a mask. Further, in this embodiment, the entire opening of the hole 51a is
The structure is covered with the silicon dioxide film 26. Therefore,
It has the same characteristics as the structure shown in FIG. 13 (h 1 ) or (h 2 ). In particular, in this example, since the protrusion 35 has a truncated pyramid shape, the area of the tip is larger than that of a pyramidal shape. Therefore, it can be expected that the rigidity of the protrusion support portion 43 is large, which is useful for increasing the contact pressure of the protrusion.

[Procedure Amendment 10]

[Document name to be amended] Statement

[Correction target item name] 0114

[Correction method] Change

[Correction content]

16 (b 1 ) and (b 2 )
It is the top view which looked at (b) from the lower part. Here, in FIG.
(B 1 ) is an example in which a conductive film 39 is formed on a part of a portion where the silicon wafer 28 is anisotropically etched to reach the silicon dioxide layer 26 on which the protrusion 34 is formed.

[Procedure Amendment 11]

[Document name to be amended] Statement

[Correction target item name] 0115

[Correction method] Change

[Correction content]

(B 2 ) is an example in which the conductive film 39 is formed so as to cover the entire anisotropically etched portion.

[Procedure Amendment 12]

[Document name to be amended] Statement

[Correction target item name] 0120

[Correction method] Change

[Correction content]

FIG. 18B shows a photoresist mask 55.
And 56 are removed, and a step of forming the projection support portion 43 having a cantilever structure of the silicon dioxide film 26 having the projection 35 on the surface is shown. It should be noted that FIG. 1 (b 1 ) is a plan view of (b) as seen from below. The photoresist masks 55 and 56 are removed using S502a (Tokyo Ohka Kogyo).

[Procedure Amendment 13]

[Document name to be amended] Statement

[Name of item to be corrected] 0148

[Correction method] Change

[Correction content]

In FIG. 22D, a buffer layer 46 is provided between the surface of the photoresist mask 67 and the surface of the silicon dioxide film 30 deposited on the surface of the conductive coating 37 and the silicon substrate which is the supporting member 45. A process of removing the silicon dioxide film 29 and the silicon wafer 27 after sandwiching and integrating is shown. 22 (d 1 ) is a plan view of (d) as seen from below.

[Procedure Amendment 14]

[Document name to be amended] Statement

[Name of item to be corrected] 0160

[Correction method] Change

[Correction content]

The holes 51a are formed until the silicon dioxide film 26 is reached. Note that a part of the silicon wafer 51 may be left as in FIG. 12 (f 1 ).

[Procedure Amendment 15]

[Document name to be amended] Statement

[Correction target item name] 0163

[Correction method] Change

[Correction content]

In all of these examples, the protrusion 35 is formed in the same manner as the steps shown in FIGS. 16 (a) and 16 (b). Then, as in the steps shown in FIGS. 12E and 12F, the hole 28a is opened by anisotropic etching. However, in this example, the holes 28a are provided in a size such that the plurality of protrusions 35 are located on the opening surface thereof. Therefore, the mask is opened in that size. Also, this hole 28a is
The process is performed until the silicon dioxide film 26 is reached. Note that a part of the silicon wafer 28 may be left as shown in FIG. 12 (f 1 ).

[Procedure Amendment 16]

[Document name to be amended] Statement

[Name of item to be corrected] 0168

[Correction method] Change

[Correction content]

FIG. 38 (i) shows an octagonal pyramidal protrusion 35 formed of a silicon dioxide film 26 and provided with a conductive film 39.
It is a cross-sectional view after the step of forming the cantilever-shaped projection support portion 43 supported on the surface. Note that FIG.
(I 1 ) is a plan view of (i) seen from below, and FIG.
2 ) is a perspective view of (i) viewed from below. here,
The silicon single crystal 28 is anisotropically etched by immersing the (100) plane of the silicon single crystal 28 in an etching solution containing, for example, potassium hydroxide, isopropanol, and water using the square silicon dioxide film as a mask. To form an octagonal pyramid-shaped protrusion 35, and
The contact terminal portion is formed by the same process as the process described in 1.
However, the etching conditions, that is, the component ratio of the etching liquid, the liquid temperature, and the etching rate are managed differently from them.

[Procedure Amendment 17]

[Document name to be amended] Statement

[Name of correction target item] 0169

[Correction method] Change

[Correction content]

FIG. 39 (h) shows an octagonal pyramidal protrusion 35 formed of a silicon dioxide film 26 and provided with a conductive film 39.
Contact terminals 42 are formed on the surface of the silicon dioxide film 26.
3 is a cross-sectional view after the step of forming the. 39 (h 1 ) is a plan view of (h) seen from below,
(H 2 ) is a perspective view of (h) viewed from below. Here, the silicon single crystal 28 is anisotropically etched by immersing the (100) plane of the silicon single crystal 28 in an etching solution containing potassium hydroxide, isopropanol, and water using the square silicon dioxide film as a mask. do it,
An octagonal pyramid-shaped protrusion 35 is formed, and
The contact terminal portion is formed by the same process as the process described in 1.

[Procedure 18]

[Document name to be amended] Statement

[Name of item to be corrected] Fig. 18

[Correction method] Change

[Correction content]

18 (a), 18 (b) and 18 (c) are end views showing the steps of another embodiment of the manufacturing process for forming the connection device according to the present invention, and FIG. 18 (b1) shows this. It is a top view which shows the structure of the contact terminal formed by the method.

 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Takashi Tase 1-280, Higashi Koikekubo, Kokubunji, Tokyo Inside the Central Research Laboratory, Hitachi, Ltd.

Claims (45)

[Claims] 1. A connection device for making electrical contact with an inspection object to send and receive an electrical signal, comprising: a plurality of contact terminals for electrically contacting the inspection object; And a first base material that supports the contact terminal and the lead wiring, wherein the contact terminal is a protrusion obtained by anisotropically etching a crystalline second base material, A protrusion supporting portion that supports the protrusion portion, wherein the protrusion portion has a conductive portion at least on the tip side thereof, and the conductive portion is connected to the corresponding lead-out wiring. Connection device. 2. The first base material according to claim 1, wherein the first base member has a hole in a rear portion of the protrusion, and the protrusion support portion closes a portion occupying at least a part of an opening of the hole. A connecting device which is arranged and which supports the protrusion at this portion. 3. The connection device according to claim 2, wherein the projection support portion has a cantilever-shaped portion whose one end is supported by an edge of the hole. 4. The connection device according to claim 2, wherein the protrusion support portion has a bridge-shaped portion whose both ends are supported by edges of the hole. 5. The connection device according to claim 2, wherein the projection support portion is supported along the entire periphery of the hole edge and covers the opening portion of the hole. 6. The connection device according to claim 1, wherein the lead-out wiring is provided integrally with a conductive portion at a tip of the protrusion. 7. The SOI (Sili) structure according to claim 1, wherein the first and second base materials have a structure of (silicon-insulating layer-silicon) in which an insulating layer is sandwiched between silicon layers.
The connection device is configured by a silicon layer of a con On Insulator) substrate, the protrusion support portion is configured by including the insulating layer, and at least the second base material is a single crystal. 8. The connection device according to claim 1, further comprising a buffer layer and a support member, wherein the substrate on which the contact terminal is formed is fixed to the support member with the buffer layer sandwiched therebetween. 9. The connection device according to claim 8, further comprising a wiring board on which the support member is mounted, and the lead-out wiring and the wiring of the wiring board are connected to each other. 10. The substrate according to claim 1, further comprising a buffer layer and a wiring substrate, wherein the substrate on which the contact terminal is formed is fixed to the wiring substrate with the buffer layer sandwiched between the substrate and the wiring for extraction. A connection device that is connected to the wiring of the wiring board. 11. A method of manufacturing a connection device for electrically transmitting and receiving an electric signal by making electrical contact with an object to be inspected, comprising: an insulating film; a first substrate and a second substrate sandwiching the insulating film; Of a substrate having at least a second base material that is crystalline, and a plurality of portions of the second base material are formed with masks that respectively cover the portions, and the second base material is anisotropically formed. Etching, a step of removing the mask to form a protrusion at a portion covered by the mask, and forming a conductive coating on the tip of the protrusion to cover the tip, and And a step of forming a lead-out wiring connected to the conductive coating and arranged along the first base material. 12. The method according to claim 11, wherein after forming an oxide film on the protrusion, a conductive coating is formed on the tip of the oxide film to cover the tip and a lead-out wiring is formed. Manufacturing method of connection device. 13. The method according to claim 11 or 12, wherein the rear portion of the protrusion of the first substrate is removed by etching.
A method for manufacturing a connection device, further comprising a step of forming a hole in the first base material. 14. The formation of the hole according to claim 13,
A method of manufacturing a connection device, comprising: forming a groove-shaped mask hole reaching the first base material in the insulating film; and etching the first base material from the mask hole. 15. The method of manufacturing a connection device according to claim 14, wherein a single crystal is used as the first base material, and the etching of the first base material in forming the holes is performed by anisotropic etching. 16. The insulating film according to claim 15, wherein a hole having a U-shaped pattern is formed as a groove-shaped mask hole provided in the insulating film, and an insulating film positioned in a cantilever shape is formed in an opening of the hole. A method of manufacturing a connection device, which is formed. 17. The method according to claim 15, wherein two parallel grooves are formed as groove-shaped mask holes provided in the insulating film,
A method for manufacturing a connection device, wherein an insulating film positioned in a bridge shape is formed in the opening of the groove. 18. The method according to claim 14, wherein a third insulating film is provided on a surface of the first base material opposite to the second base material with a second insulating film interposed therebetween.
The method for manufacturing a connection device, wherein the substrate is formed by laminating the base material, and the hole is formed by etching the first base material from the mask hole until the second insulating film is reached. 19. The formation of the hole according to claim 13,
A method for manufacturing a connection device, wherein the first base material is formed by etching from a surface opposite to a surface having the second base material. 20. The formation of the hole according to claim 19,
A method for manufacturing a connection device, which is performed until an insulating film between the first base material and the second base material is reached. 21. The formation of the hole according to claim 19,
A method of manufacturing a connecting device, wherein etching is stopped before reaching an insulating film between the first base material and the second base material, and the etching is stopped until the first base material remains. 22. The method of manufacturing a connection device according to claim 20, wherein the insulating film covering the hole is etched and cut in a U-shaped pattern so as to surround the protrusion. 23. The method of manufacturing a connecting device according to claim 11, wherein the substrate having the contact terminals formed thereon is fixed to a supporting member with a buffer layer interposed therebetween. 24. The support member according to claim 23,
A method of manufacturing a connecting device, further comprising the step of fixing to a wiring board, and connecting the wiring for drawing and the wiring of the wiring board. 25. A method of manufacturing a connection device for electrically transmitting and receiving an electric signal by making electrical contact with an inspection object, comprising: an insulating film; a first substrate and a second substrate sandwiching the insulating film; A substrate having at least a second base material that is crystalline, the first base material is etched from the side opposite to the surface having the second base material to form a first hole. And a mask hole reaching the second base material is provided in a part of the insulating film exposed in the first hole, and through the mask hole,
Anisotropically etching the second base material to form a pyramidal second hole; and forming a conductive coating on the inner surface of the pyramidal second hole, and at the same time forming the first hole. A step of forming a lead-out wiring that is connected to the conductive coating on the inner surface of the substrate and the surface outside the hole to draw out to the outside, and a step of removing the second base material by etching. A method for manufacturing a connection device, comprising: 26. In claim 25, the step of forming the conductive coating and forming the lead wiring covers the inner surface of the pyramidal second hole for forming the contact terminal protrusion. A method of manufacturing a connection device, comprising: leaving a portion and leaving a portion for forming a lead wiring, and removing the other portion by etching. 27. In claim 26, in the step of forming the conductive coating, a base film is formed, a conductive coating is formed thereon, and in the second base material removing step, After removing the base material of No. 2, the base film is removed, and the other portions of the conductive coating are etched by leaving the portions covering the contact terminal protrusions and the lead wiring formation. A method for manufacturing a connection device, which comprises removing the connection device. 28. The method according to claim 25, wherein a crystalline material is used as the first base material, and the first base material is covered with a mask so as to surround a portion of the second base material where a protrusion is formed. A method for manufacturing a connection device, which comprises performing anisotropic etching. 29. The insulating film according to claim 25, wherein the insulating film is covered with a mask having a U-shaped pattern so as to surround a portion where the protrusion of the second base material is formed, and is cut by etching. And a method for manufacturing a connection device. 30. The method for manufacturing a connection device according to claim 25, wherein the substrate having the contact terminals formed thereon is fixed to a support member with a buffer layer interposed therebetween. 31. The support member according to claim 30,
A method of manufacturing a connecting device, further comprising the step of fixing to a wiring board, and connecting the wiring for drawing and the wiring of the wiring board. 32. The method according to claim 11, 19 or 25.
The first and second base materials have an SOI (Silicon On Insul) structure having a structure of (silicon-insulating layer-silicon) in which one insulating layer is sandwiched between silicon layers.
attor) A connecting device which is composed of a silicon layer of a substrate, and at least the second base material is a single crystal. 33. The method according to claim 11, 19 or 25.
The method for manufacturing a connecting device further comprising a step of forming a plating film on at least one of the conductive coating and the lead wiring. 34. The method for manufacturing a connection device according to claim 33, wherein the plating film is formed of a material having a hardness higher than that of the conductive coating. 35. A sample support system for movably supporting an object to be inspected in an inspection device for inspecting by transmitting and receiving an electric signal by contacting each electrode of the object to be inspected, in which a large number of electrodes are arranged, Item 9. A probe system having the connecting device according to item 9 or 10, wherein a surface of the connecting device having the contact terminals is arranged so as to face an inspection target of the sample support system, and an inspection target of the sample support system. An inspection apparatus, comprising: a drive control system for controlling displacement drive; and a tester connected to the probe system to perform an inspection. 36. An inspection device for contacting each electrode of an inspection object, in which a large number of electrodes are arranged, to send and receive an electric signal to perform the inspection, and a sample support part for supporting the inspection object, and Alternatively, the connection device according to claim 10, wherein the connection device has at least one individual probe system arranged such that a surface having the contact terminal faces an inspection target object of the sample support part, and the individual connection device. An inspection apparatus comprising: a tester connected to a probe system to perform an inspection, wherein the individual probe system is mounted on a motherboard and connected to the tester via the motherboard. 37. An inspection apparatus for contacting each electrode of an inspection object, in which a large number of electrodes are arranged, to send and receive an electric signal to perform an inspection, and a sample support part for supporting the inspection object, Or a probe system in which the surface having the contact terminals is arranged so as to face the inspection object of the sample support part, and the connection device is connected to the probe system for inspection. And a tester for performing the inspection. 38. A connection device for making electrical contact with an inspection object to send and receive an electric signal, comprising: a plurality of contact terminals for electrically contacting the inspection object; And a first base material that supports the contact terminal and the lead wire, the contact terminal includes a protrusion having a ridge and a protrusion support that supports the protrusion, The connection device, wherein the protrusion has a conductive portion at least on the tip side thereof, and the conductive portion is connected to the corresponding lead-out wiring. 39. The connection device according to claim 1, wherein the protrusion has a pyramid shape or a truncated pyramid shape. 40. The connection device according to claim 39, wherein the projection has an octagonal pyramid shape or an octagonal pyramid shape. 41. The connection device according to claim 39, wherein the protrusion has a shape of a quadrangular pyramid or a truncated quadrangular pyramid. 42. The method for manufacturing a connection device according to claim 11, wherein the second base material is anisotropically etched to form pyramidal protrusions. 43. The method of manufacturing a connection device according to claim 13, wherein the hole is formed by removing a rear portion of a range including a plurality of protrusions of the first base material by etching. 44. The connection device according to claim 2, wherein each protrusion support portion has a plurality of protrusions. 45. A substrate having a structure in which a plurality of contact terminals for electrically contacting a semiconductor element are sandwiched between one or a plurality of insulating layers between crystalline substrates, and one substrate is different. It is composed of a projection with a sharp tip obtained by isotropic etching, and has a conductive portion at least on the tip side of the projection, and the plurality of contact terminals are pressed against the electrodes of the semiconductor element to generate an electric signal. An electric signal is input to the semiconductor element from a tester that inputs and outputs to perform an operation test, the semiconductor element electrically operates, the semiconductor element outputs to the tester, and an inspection is performed by the output signal. Semiconductor device inspection method.