JPH0818390A - Surface acoustic wave device - Google Patents
Surface acoustic wave deviceInfo
- Publication number
- JPH0818390A JPH0818390A JP6173225A JP17322594A JPH0818390A JP H0818390 A JPH0818390 A JP H0818390A JP 6173225 A JP6173225 A JP 6173225A JP 17322594 A JP17322594 A JP 17322594A JP H0818390 A JPH0818390 A JP H0818390A
- Authority
- JP
- Japan
- Prior art keywords
- acoustic wave
- surface acoustic
- metal film
- electrode
- terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/161—Cap
- H01L2924/1615—Shape
- H01L2924/16195—Flat cap [not enclosing an internal cavity]
Landscapes
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、通信機器の高周波機能
部品として用いられる弾性表面波装置に関するものであ
る。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a surface acoustic wave device used as a high frequency functional component of communication equipment.
【0002】[0002]
【従来の技術】弾性表面波を利用したデバイス、例え
ば、共振子,フィルタ等の弾性表面波素子(チップ)を
収容した弾性表面波装置は、素子の振動する電極面を中
空で、かつ、気密に保つため素子をセラミック等のパッ
ケージに収容して溶接により封止する構造を有してい
る。図4は従来の構造例を示す断面図である。図におい
て、13は弾性表面波素子であり、上面にすだれ状の変
換器電極とその端子電極が設けられている。17はパッ
ケージ、14はパッケージ17の内部の端子電極であ
り、ボンディングワイヤ16によって素子13の端子電
極に接続されている。15は、キャップである。2. Description of the Related Art A device utilizing surface acoustic waves, for example, a surface acoustic wave device accommodating a surface acoustic wave element (chip) such as a resonator or a filter has a hollow and airtight electrode surface of the element. In order to maintain the above, the device is housed in a package such as ceramic and sealed by welding. FIG. 4 is a cross-sectional view showing a conventional structure example. In the figure, reference numeral 13 is a surface acoustic wave element, on which an interdigital transducer electrode and its terminal electrode are provided on the upper surface. Reference numeral 17 is a package, and 14 is a terminal electrode inside the package 17, which is connected to a terminal electrode of the element 13 by a bonding wire 16. 15 is a cap.
【0003】[0003]
【発明が解決しようとする課題】一般に、従来の弾性表
面波装置は、セラミックパッケージ等が高価であり装置
のコストの大きな割合を占めているため、価格の低減に
限度がある。また、図4に示した従来の表面実装形のセ
ラミックパッケージの場合も、弾性表面波素子の1チッ
プを1パッケージに収容するため、小型化の限界はパッ
ケージ17の大きさにより決定されている。また、装置
の高さについては、ボンディングワイヤ16とキャップ
15とが接触しないように空間部が必要なことと、パッ
ケージ17自体の底面部の厚さのため、薄型化にも制約
がある。さらに、弾性表面波素子(チップ)13を他の
IC回路等と共にパッケージに収容して封止する場
合、、チップが裸のままでは、封止樹脂が振動する電極
表面に接触するため、所望の電気特性が得られない場合
がある。一方、上記の素子実装の製造工程は、大きく分
けてダイボンディング,ワイヤボンディング,気密封止
の3つの工程からなり、製造コスト面でも、工数面で
も、工程がより少ない方が望ましい。Generally, in a conventional surface acoustic wave device, a ceramic package or the like is expensive and occupies a large proportion of the cost of the device. Further, in the case of the conventional surface mount type ceramic package shown in FIG. 4 as well, one chip of the surface acoustic wave device is accommodated in one package, and therefore the limit of miniaturization is determined by the size of the package 17. Further, with respect to the height of the device, there is a limitation in reducing the thickness because a space is required to prevent the bonding wire 16 and the cap 15 from contacting each other and the thickness of the bottom surface of the package 17 itself. Furthermore, when the surface acoustic wave element (chip) 13 is accommodated in a package together with other IC circuits and sealed, the sealing resin comes into contact with the vibrating electrode surface when the chip is left bare. The electrical characteristics may not be obtained. On the other hand, the above-mentioned device mounting manufacturing process is roughly divided into three processes of die bonding, wire bonding, and hermetic sealing, and it is desirable that the number of processes is smaller in terms of manufacturing cost and man-hours.
【0004】本発明の目的は、従来技術の問題点の高価
なパッケージを排除し、弾性表面波素子等の振動する電
極面に振動可能な空間部が確保され、気密に保ちながら
小型化,薄型化でき、さらに、製造工程が少ない弾性表
面波装置を提供することにある。The object of the present invention is to eliminate the expensive package, which is a problem of the prior art, and to secure a vibrating space on the vibrating electrode surface of a surface acoustic wave element or the like. The object of the present invention is to provide a surface acoustic wave device which can be made more compact and has fewer manufacturing steps.
【0005】[0005]
【課題を解決するための手段】本発明の弾性表面波装置
は、振動するIDT電極の周囲のすべて、あるいは接続
端子を除いた周囲に、IDT電極と同じかまたは他の金
属膜を設けることにより銀(Ag)ペースト等の導電性
接着剤を用い素子の固定と電極部の接続および気密封止
を同時に行えるようにしたことを要旨とするものであ
る。In the surface acoustic wave device of the present invention, the same or another metal film as the IDT electrode or another metal film is provided around the vibrating IDT electrode or around the vibrating IDT electrode. The gist of the invention is that a conductive adhesive such as a silver (Ag) paste can be used to simultaneously fix the element, connect the electrodes, and hermetically seal.
【0006】[0006]
【実施例】以下図面により本発明の詳細を説明する。代
表例として、素子が弾性表面波共振子の場合について述
べる。図1は本発明の第1の実施例を示す説明用斜視図
である。図において、1は圧電基板、2は圧電基板1の
上に形成されたすだれ状電極(Inter Digtal Transduce
r ,以下IDTと略す)、3は接続用端子電極、4はI
DT電極1,端子電極3と同じ材質の金属かあるいは他
の金属で周囲を囲むように設けた周囲金属膜である。一
方、9は端子導体、10は周囲接地導体であり、絶縁性
の実装基板12上に配設されている。11は配線導体で
あり、多層構成の実装基板12の内層に配設されて外部
回路との接続に用いられる。実装基板12の端子導体
9,周囲接地導体10に導電性接着剤をスクリーン印刷
法等により塗布し、弾性表面波素子を電極面を下にし、
端子電極3と端子導体9、及び周囲金属膜4と周囲接地
導体10を対向させ精度よく位置を合わせて接着する。
その後、加熱硬化してチップと基板を密着させて実装す
る。以上の工程によって、チップの固定,電極の接続,
気密封止実装を同時に行うことができる。BRIEF DESCRIPTION OF THE DRAWINGS FIG. As a typical example, a case where the element is a surface acoustic wave resonator will be described. FIG. 1 is an explanatory perspective view showing a first embodiment of the present invention. In the figure, 1 is a piezoelectric substrate, and 2 is an interdigital transducer formed on the piezoelectric substrate 1.
r, hereinafter abbreviated as IDT), 3 is a connecting terminal electrode, 4 is an I
It is a peripheral metal film provided so as to surround the periphery with a metal of the same material as the DT electrode 1 or the terminal electrode 3 or another metal. On the other hand, 9 is a terminal conductor, and 10 is a surrounding ground conductor, which are arranged on an insulating mounting substrate 12. Reference numeral 11 is a wiring conductor, which is arranged in the inner layer of the mounting substrate 12 having a multi-layered structure and used for connection with an external circuit. A conductive adhesive is applied to the terminal conductor 9 and the surrounding ground conductor 10 of the mounting substrate 12 by screen printing or the like, and the surface acoustic wave element is placed with the electrode surface down.
The terminal electrode 3 and the terminal conductor 9, and the surrounding metal film 4 and the surrounding ground conductor 10 are made to face each other and accurately aligned and bonded.
Then, it is heat-cured and the chip and the substrate are brought into close contact with each other to be mounted. Through the above process, the chip is fixed, the electrodes are connected,
Hermetically sealed mounting can be performed at the same time.
【0007】この時、IDT2と基板12との間に10
00Å以上の空間部が確保される。すなわち、基板12
のIDT2と対向する部分を、端子導体9と周囲接地導
体10よりも掘り下げた構造、又はIDT2の厚さより
も、端子電極3と周囲金属膜4を厚くする構造、あるい
は、導電性接着剤の厚みにより、この空間部を確保す
る。At this time, 10 is provided between the IDT 2 and the substrate 12.
A space above 00Å is secured. That is, the substrate 12
Of the terminal conductor 9 and the surrounding ground conductor 10 are dug down in a portion facing the IDT2, or the structure in which the terminal electrode 3 and the surrounding metal film 4 are thicker than the thickness of the IDT2, or the thickness of the conductive adhesive. This space is secured by.
【0008】図2は本発明の第2の実施例を示す素子側
の平面図である。この実施例では、周期金属膜5は、圧
電基板1上に施されたIDT2の一方の端子電極3に対
する他の端子電極と連接されている。この場合も、図1
の第1の実施例と同様に、基板12側の上記素子側電極
に対向する部分に端子導体と周囲接地導体とを設けて接
合し、IDT2と対向する基板12との間に1000Å
以上の空間部が設けられている。FIG. 2 is a plan view of the element side showing the second embodiment of the present invention. In this embodiment, the periodic metal film 5 is connected to one terminal electrode 3 of the IDT 2 formed on the piezoelectric substrate 1 and the other terminal electrode. Also in this case, FIG.
In the same manner as in the first embodiment described above, a terminal conductor and a surrounding ground conductor are provided and joined to a portion of the substrate 12 facing the element-side electrode, and 1000 Å is provided between the IDT 2 and the opposing substrate 12.
The above space is provided.
【0009】図3(a)は本発明の第3の実施例を示す
素子側の平面図である。この実施例は、圧電基板1上に
施されたIDT2の一方の端子電極6が周期金属膜7の
一部をなすような位置に設けられている。そして、その
端子電極6と周囲金属膜7との間に100μm以下の間
隙8が設けられている。この実施例の場合、端子電極6
は周囲金属膜7の内側に囲まれていないため、対向する
基板12は配線導体の接続が容易であるため、多層構成
でなくてよい。この場合も、図1,図2の実施例と同様
に、IDT2と対向する基板12との間に1000Å以
上の空間部が設けられている。また、この場合は、導電
性接着剤を用いて基板12に実装したとき、間隙8があ
るために完全な気密封止にはならないが、間隙8は10
0μm以下であるので、他のIC回路等と同時に樹脂封
止して実用に供することができる。FIG. 3A is a plan view of the element side showing the third embodiment of the present invention. In this embodiment, one terminal electrode 6 of the IDT 2 provided on the piezoelectric substrate 1 is provided at a position where it forms a part of the periodic metal film 7. A gap 8 of 100 μm or less is provided between the terminal electrode 6 and the surrounding metal film 7. In the case of this embodiment, the terminal electrode 6
Since it is not surrounded by the surrounding metal film 7, it is not necessary to have a multilayer structure because the opposing substrate 12 can easily connect wiring conductors. Also in this case, as in the embodiment shown in FIGS. 1 and 2, a space of 1000 Å or more is provided between the IDT 2 and the opposing substrate 12. Further, in this case, when the conductive adhesive is used to mount on the substrate 12, the airtight sealing cannot be achieved due to the gap 8, but the gap 8 is 10
Since it is 0 μm or less, it can be put to practical use by resin-sealing it simultaneously with other IC circuits and the like.
【0010】図3(b)は本発明の第4の実施例を示す
素子側の平面図であり、IDT2の端子電極6の両方が
接地から絶縁されている場合である。従って、周囲金属
膜7’は端子電極6の部分で分断されている。FIG. 3B is a plan view of the element side showing the fourth embodiment of the present invention, in which both of the terminal electrodes 6 of the IDT 2 are insulated from the ground. Therefore, the surrounding metal film 7 ′ is divided at the portion of the terminal electrode 6.
【0011】[0011]
【発明の効果】以上詳細に説明したように、本発明によ
れば、従来のようなパッケージを必要としないため、コ
ストが低減され、外形寸法をより小型化,薄型化するこ
とができる。また、素子の固定,電極の接続,気密封止
が同時に行えるため、工程数も大幅に減り製造コストが
低減されるという利点がある。As described in detail above, according to the present invention, a conventional package is not required, so that the cost can be reduced and the external dimensions can be made smaller and thinner. Further, since the fixing of the element, the connection of the electrodes, and the hermetic sealing can be performed at the same time, there is an advantage that the number of steps is significantly reduced and the manufacturing cost is reduced.
【図1】本発明の第1の実施例を説明する斜視図であ
る。FIG. 1 is a perspective view illustrating a first embodiment of the present invention.
【図2】本発明の第2の実施例を示す素子の平面図であ
る。FIG. 2 is a plan view of an element showing a second embodiment of the present invention.
【図3】本発明の第3及び第4の実施例を示す素子の平
面図である。FIG. 3 is a plan view of an element showing third and fourth embodiments of the present invention.
【図4】従来構成の断面図である。FIG. 4 is a sectional view of a conventional configuration.
1 圧電基板 2 IDT 3 端子電極 4 周囲金属膜 5 周囲金属膜 6 端子電極 7,7’ 周囲金属膜 8 間隙 9 端子導体 10 周囲接地導体 11 配線導体 12 基板 13 弾性表面波素子 14 端子電極 15 キャップ 16 ボンディングワイヤ 17 パッケージ DESCRIPTION OF SYMBOLS 1 Piezoelectric substrate 2 IDT 3 Terminal electrode 4 Surrounding metal film 5 Surrounding metal film 6 Terminal electrode 7,7 'Surrounding metal film 8 Gap 9 Terminal conductor 10 Surrounding ground conductor 11 Wiring conductor 12 Board 13 Surface acoustic wave element 14 Terminal electrode 15 Cap 16 bonding wire 17 package
Claims (8)
すだれ状電極と、該すだれ状電極に連接し該すだれ状電
極の厚さより厚い2つの端子電極と、該端子電極の厚さ
と等しい厚さで、前記すだれ状電極と前記2つの端子電
極の周囲を取り囲むように前記圧電基板の周縁部に配設
された周囲金属膜とからなる弾性表面波素子と、 該弾性表面波素子を実装するための絶縁性の実装基板と
を備え、 前記実装基板は、前記2つの端子電極と前記周囲金属膜
に対向する部分にそれぞれ端子導体と周囲接地導体とが
配設され、 前記弾性表面波素子の電極面と前記実装基板の導体面と
を対向させて導電性接着剤により面接合してなることを
特徴とする弾性表面波装置。1. A piezoelectric substrate, a comb-shaped electrode provided on the piezoelectric substrate, two terminal electrodes connected to the comb-shaped electrode and thicker than the comb-shaped electrode, and a thickness of the terminal electrode. A surface acoustic wave element having an equal thickness, which is composed of the interdigital transducer and a peripheral metal film which is disposed on the peripheral portion of the piezoelectric substrate so as to surround the periphery of the two terminal electrodes, and the surface acoustic wave element. An insulating mounting substrate for mounting, wherein the mounting substrate is provided with a terminal conductor and a surrounding ground conductor in portions facing the two terminal electrodes and the surrounding metal film, respectively. A surface acoustic wave device, characterized in that an electrode surface of an element and a conductor surface of the mounting substrate are opposed to each other and are surface-bonded with a conductive adhesive.
前記周囲金属膜に接続されたことを特徴とする請求項1
記載の弾性表面波装置。2. The one terminal electrode of the two terminal electrodes is connected to the surrounding metal film.
The surface acoustic wave device described.
前記周囲金属膜に接続され、他方の端子電極は前記周囲
金属膜の一部をなすような位置に間隙をおいて設けられ
たことを特徴とする請求項1記載の弾性表面波装置。3. One of the two terminal electrodes is connected to the surrounding metal film, and the other terminal electrode is provided with a gap so as to form a part of the surrounding metal film. The surface acoustic wave device according to claim 1, wherein:
一部をなすような位置にそれぞれ間隙をおいて設けられ
たことを特徴とする請求項1記載の弾性表面波装置。4. The surface acoustic wave device according to claim 1, wherein the two terminal electrodes are provided at positions so as to form a part of the surrounding metal film with a gap therebetween.
すだれ状電極と、該すだれ状電極に連接した2つの端子
電極と、前記すだれ状電極と前記2つの端子電極の周囲
を取り囲むように前記圧電基板の周縁部に配設された周
囲金属膜とからなる弾性表面波素子と、 該弾性表面波素子を実装するための絶縁性の実装基板と
を備え、 前記実装基板は、前記2つの端子電極と前記周囲金属膜
に対向する部分にそれぞれ端子導体と周囲接地導体とが
配設されるとともに、前記すだれ状電極に対向する部分
が掘り下げられて弾性表面波振動を妨げないための空間
部が設けられ、 前記弾性表面波素子の電極面と前記実装基板の導体面と
を対向させて導電性接着剤により面接合してなることを
特徴とする弾性表面波装置。5. A piezoelectric substrate, a comb-shaped electrode arranged on the piezoelectric substrate, two terminal electrodes connected to the comb-shaped electrode, and surrounding the comb-shaped electrode and the two terminal electrodes. A surface acoustic wave element formed of a peripheral metal film disposed on the peripheral portion of the piezoelectric substrate as described above, and an insulating mounting substrate for mounting the surface acoustic wave element. A terminal conductor and a peripheral ground conductor are respectively arranged in the portions facing the two terminal electrodes and the surrounding metal film, and the portions facing the interdigital electrodes are not dug down to prevent surface acoustic wave vibration. A surface acoustic wave device, characterized in that a space is provided, and an electrode surface of the surface acoustic wave element and a conductor surface of the mounting substrate are opposed to each other and are surface-bonded with a conductive adhesive.
前記周囲金属膜に接続されたことを特徴とする請求項5
記載の弾性表面波装置。6. The terminal electrode of one of the two terminal electrodes is connected to the surrounding metal film.
The surface acoustic wave device described.
前記周囲金属膜に接続され、他方の端子電極は前記周囲
金属膜の一部をなすような位置に間隙をおいて設けられ
たことを特徴とする請求項5記載の弾性表面波装置。7. One of the two terminal electrodes is connected to the surrounding metal film, and the other terminal electrode is provided at a position so as to form a part of the surrounding metal film with a gap therebetween. The surface acoustic wave device according to claim 5, wherein
一部をなすような位置にそれぞれ間隙をおいて設けられ
たことを特徴とする請求項5記載の弾性表面波装置。8. The surface acoustic wave device according to claim 5, wherein the two terminal electrodes are provided with a gap between them so as to form a part of the surrounding metal film.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6173225A JPH0818390A (en) | 1994-07-01 | 1994-07-01 | Surface acoustic wave device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP6173225A JPH0818390A (en) | 1994-07-01 | 1994-07-01 | Surface acoustic wave device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0818390A true JPH0818390A (en) | 1996-01-19 |
Family
ID=15956466
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP6173225A Pending JPH0818390A (en) | 1994-07-01 | 1994-07-01 | Surface acoustic wave device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0818390A (en) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6621379B1 (en) * | 2001-11-29 | 2003-09-16 | Clarisay, Incorporated | Hermetic package for surface acoustic wave device and method of manufacturing the same |
DE10146655B4 (en) * | 2001-03-30 | 2004-08-12 | Fujitsu Media Devices Ltd., Suzaka | Surface acoustic wave device |
EP1471635A2 (en) | 2003-03-31 | 2004-10-27 | Fujitsu Media Devices Limited | Surface acoustic wave device and method of fabricating the same |
JP2006108993A (en) * | 2004-10-04 | 2006-04-20 | Hitachi Media Electoronics Co Ltd | Surface acoustic wave device and manufacturing method thereof |
US7176599B2 (en) | 2003-06-05 | 2007-02-13 | Fujitsu Media Devices Limited | Surface acoustic wave device and method of producing the same |
KR100695255B1 (en) * | 2004-12-24 | 2007-03-14 | 후지쓰 메디아 데바이스 가부시키가이샤 | Electronic device and method of fabricating the same |
US7211934B2 (en) | 2003-01-07 | 2007-05-01 | Hitachi, Ltd. | Electronic device and method of manufacturing the same |
US7274129B2 (en) | 2003-04-08 | 2007-09-25 | Fujitsu Media Devices Limited | Surface acoustic wave device and method of fabricating the same |
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1994
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JP2006108993A (en) * | 2004-10-04 | 2006-04-20 | Hitachi Media Electoronics Co Ltd | Surface acoustic wave device and manufacturing method thereof |
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US7554242B2 (en) | 2005-01-17 | 2009-06-30 | Seiko Epson Corporation | Surface acoustic wave chip, surface acoustic wave device, and manufacturing method for implementing the same |
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