JPH08168954A - Method for preventing polishing flaw - Google Patents
Method for preventing polishing flawInfo
- Publication number
- JPH08168954A JPH08168954A JP31160294A JP31160294A JPH08168954A JP H08168954 A JPH08168954 A JP H08168954A JP 31160294 A JP31160294 A JP 31160294A JP 31160294 A JP31160294 A JP 31160294A JP H08168954 A JPH08168954 A JP H08168954A
- Authority
- JP
- Japan
- Prior art keywords
- polishing
- abrasive
- particle size
- occurrence
- rate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は材料を研磨する研磨剤に
係わり、特に液晶用ガラス基板を研磨する研磨剤につい
て研磨キズの発生率を小さくするための研磨剤選択方法
に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a polishing agent for polishing a material, and more particularly to a polishing agent selecting method for reducing the rate of occurrence of polishing scratches in the polishing agent for polishing a glass substrate for liquid crystal.
【0002】[0002]
【従来の技術】ガラスを研磨して表面を平滑にしたり、
あるいは表面を平坦にする場合、もっともよく行われて
いるのが酸化セリウム等の研磨剤を用いた遊離砥粒方式
研磨である。たとえば、最近のパソコン、ワープロ等の
ディスプレーに使用されている液晶用ガラス基板は、通
常オスカー式研磨機と呼ばれる片面揺動式研磨機で表面
を研磨されている。このオスカー式研磨機は、研磨布を
貼付した定盤を一定速度で回転させながら研磨布上に酸
化セリウム等の研磨剤を含むスラリー液を流し、他方ガ
ラス保持部材に貼りつけたガラス基板を定盤上の研磨布
に一定の研磨加工圧で押しつける、このときガラス保持
部材はその中心を軸として自由に回転できるので、定盤
の回転に応じて自由回転しながら定盤上で揺動するとい
う構造をもつ。2. Description of the Related Art Polishing glass to smooth the surface,
Alternatively, in the case of flattening the surface, free-abrasive grain type polishing using an abrasive such as cerium oxide is most often performed. For example, the surface of a glass substrate for liquid crystal used in displays of recent personal computers, word processors, etc. is usually polished by a single-sided swing type polishing machine called an Oscar type polishing machine. In this Oscar type polishing machine, while rotating a platen with a polishing cloth attached at a constant speed, a slurry liquid containing an abrasive such as cerium oxide is poured onto the polishing cloth, while the glass substrate attached to the glass holding member is fixed. It is pressed against the polishing cloth on the plate with a constant polishing pressure. At this time, since the glass holding member can freely rotate about its center, it swings on the plate while freely rotating according to the rotation of the plate. It has a structure.
【0003】ここで使用される研磨剤は、特に粒径が主
として1〜2μ程度の微小粉体からなる研磨剤であっ
て、その粒径は、研磨面の平滑度、研磨速度、そして研
磨キズ等の品質に深く関与することが知られている。し
かしながら、周知のように粉体の粒径は一定でなく、種
々の粒径を持っている。そのため通常、測定された粉体
の粒度分布のメディアン径またはモード径を、この種々
の粒径の代表径としてきた。このことは研磨剤について
も同様で、様々な種類の研磨剤を主として平均粒径別に
区分けしている。そして、従来はこの平均粒径を研磨キ
ズ発生率の指標と見なして、一つの品種の中で平均粒径
の比較的小さいロットを求めるのが常であった。The abrasive used here is an abrasive composed of fine powder having a particle size of mainly about 1 to 2 μ. The particle size depends on the smoothness of the polishing surface, the polishing rate, and the polishing scratches. It is known to be deeply involved in quality such as. However, as is well known, the particle size of powder is not constant and has various particle sizes. Therefore, usually, the median diameter or mode diameter of the measured particle size distribution of the powder has been used as the representative diameter of these various particle diameters. This also applies to the abrasives, and various types of abrasives are mainly classified by average particle size. In the past, it was customary to regard this average particle size as an index of the rate of occurrence of polishing scratches, and to obtain a lot having a relatively small average particle size in one product type.
【0004】[0004]
【発明が解決しようとする課題】この研磨剤の平均粒径
は、研磨剤の特性を決定する代表的な特性値であり、研
磨剤を単純に区別するときは適切な特性値と言えるが、
研磨キズに関与する研磨剤粒子は本質的に平均粒径の粒
子ではなくむしろ粒度分布の中の大粒子である。したが
って、研磨剤の平均粒径を研磨キズの発生率の指標とす
ることは適切でない。たとえば、平均粒径が小さいロッ
トでも、キズ発生率が大きいロットがあり、そのことは
実際に研磨を行ってみてはじめてわかるという不具合さ
があった。本発明はこのような従来の問題点に鑑みなさ
れたものであって、研磨剤キズの発生率を予測し研磨キ
ズ発生を事前に防止する方法を提供することにある。The average particle size of the abrasive is a typical characteristic value that determines the characteristics of the abrasive, and can be said to be an appropriate characteristic value when the abrasives are simply distinguished.
The abrasive particles involved in the polishing flaw are not essentially particles of average particle size, but rather large particles in the particle size distribution. Therefore, it is not appropriate to use the average particle size of the abrasive as an index of the occurrence rate of polishing scratches. For example, there are lots with a large scratch occurrence rate even in lots with a small average particle diameter, which is a problem that can be seen only after actually performing polishing. The present invention has been made in view of such conventional problems, and it is an object of the present invention to provide a method of predicting the occurrence rate of abrasive scratches and preventing the occurrence of polishing scratches in advance.
【0005】[0005]
【課題を解決するための手段】前記課題を達成するた
め、本発明の研磨キズ防止方法では、測定された研磨剤
粒度分布の中の、ある一定以上の大きさをもつ粒子の全
体に占める割合を研磨キズ発生率の指標としてキズの発
生を防止するようにしたものである。In order to achieve the above object, in the method for preventing polishing scratches of the present invention, the proportion of particles having a certain size or more in the entire particle size distribution of the measured abrasive is measured. Is used as an index of the rate of occurrence of scratches to prevent the occurrence of scratches.
【0006】[0006]
【作用】ガラス基板の表面に発生する研磨キズはその大
きさ、形状からみて5〜10μ以上の大粒子が原因と考
えられている。そこで研磨剤が原因となって発生する研
磨キズの発生率を予測するためには研磨剤に含まれる大
粒子の割合を知る必要がある。これは研磨剤の粒度分布
を測定し、得られた粒度分布の平均粒径ではなく大粒子
の全体に占める割合を指標とすることで可能になる。The polishing scratches generated on the surface of the glass substrate are considered to be caused by large particles having a size of 5 to 10 μ or more in view of their size and shape. Therefore, in order to predict the occurrence rate of polishing scratches caused by the abrasive, it is necessary to know the proportion of large particles contained in the abrasive. This can be achieved by measuring the particle size distribution of the abrasive and using not the average particle size of the obtained particle size distribution but the ratio of large particles to the whole as an index.
【0007】[0007]
【実施例】以下、本発明の実施例を図面を用いて説明す
る。研磨キズ発生率の異なった2種類の研磨剤ロットの
レーザー回折式粒度計による粒度分布結果を図1と図2
に示す。図1のロットAは研磨キズ発生率が1.9%で
あった研磨剤ロットで、平均粒径は2.5μであるのに
対し、図2のロットBは研磨キズ発生率が0.8%、平
均粒径2.4μと研磨キズ発生率が半分以下であるにも
かかわらず、平均粒径の差はほとんどなく、ほぼ等しい
粒径である。Embodiments of the present invention will be described below with reference to the drawings. Fig. 1 and Fig. 2 show the results of particle size distributions of two types of abrasive lots with different polishing scratch generation rates by a laser diffraction type granulometer
Shown in Lot A in FIG. 1 is an abrasive lot having a polishing flaw occurrence rate of 1.9% and has an average particle size of 2.5 μ, whereas lot B in FIG. 2 has a polishing flaw occurrence rate of 0.8. %, The average particle size was 2.4 μ and the polishing scratch occurrence rate was half or less, but there was almost no difference in the average particle size, and the particle sizes were almost the same.
【0008】これに対して本発明の研磨キズ発生防止に
たいする判断では、5μ以上の大粒子の全体に占める割
合はロットAが14.6%、ロットBが11.7%と大
きく差が出ている点に注目し、さらに10μ以上の大粒
子の占める割合では、ロットAが5.4%、ロットBが
3.5%とさらに大きく差が出ている点に注目して判断
するものである。On the other hand, in the judgment for preventing the occurrence of polishing scratches of the present invention, the proportion of large particles of 5 μ or more in the whole is 14.6% for lot A and 11.7% for lot B. It should be noted that there is a large difference between the lot A and the lot B at 5.4% and 3.5% in the proportion of large particles of 10 μ or more. .
【0009】次に種々の研磨剤ロットでの研磨キズ発生
率とその研磨剤ロットでの大粒子の占める割合の関係を
図3に示した。大粒子の占める割合が大きいロットほど
研磨キズ発生率が大きいことがわかり、本発明の評価方
法によって研磨キズの発生率を精度よく予測し研磨キズ
の発生を未然に防止することが可能である。Next, FIG. 3 shows the relationship between the rate of occurrence of polishing scratches in various abrasive lots and the proportion of large particles in the abrasive lots. It can be seen that the larger the proportion of large particles in the lot, the higher the rate of occurrence of polishing scratches. Therefore, the evaluation method of the present invention can accurately predict the rate of occurrence of polishing scratches and prevent the occurrence of polishing scratches.
【0010】[0010]
【発明の効果】研磨剤の粒度分布を測定し、粒度分布の
中の大粒子の全体に占める割合を研磨キズ発生率の指標
とすることで研磨剤が原因となる研磨キズの発生を予測
することができ研磨剤の良否が判断できる。この結果、
研磨剤を使用する前にその研磨剤の品質を判定すること
ができ、従来のように使用してから研磨キズが発生して
研磨剤のロット交換を行うという無駄を消失させること
が可能となる。EFFECT OF THE INVENTION By measuring the particle size distribution of an abrasive and using the ratio of large particles in the particle size distribution to the whole as an index of the rate of occurrence of polishing scratches, the occurrence of polishing scratches caused by the abrasive is predicted. Therefore, the quality of the polishing agent can be judged. As a result,
It is possible to judge the quality of the polishing agent before using it, and it is possible to eliminate the waste that polishing scratches occur after the conventional use and polishing lots are exchanged. .
【図1】キズ発生率の大きい研磨剤ロットAの粒度分布FIG. 1 Particle size distribution of abrasive lot A with a large scratch rate
【図2】キズ発生率の小さい研磨剤ロットBの粒度分布[Fig. 2] Particle size distribution of abrasive lot B with a small scratch rate
【図3】研磨剤中の大粒子の占める割合と研磨キズ発生
率の関係を示すグラフFIG. 3 is a graph showing the relationship between the proportion of large particles in the abrasive and the rate of occurrence of polishing scratches.
Claims (1)
該研磨剤の粒度分布における大粒子の混合割合の小さい
研磨剤を選択することを特徴とする研磨キズの防止方
法。1. An abrasive having an average particle size of approximately the same,
A method for preventing polishing scratches, which comprises selecting an abrasive having a small mixing ratio of large particles in the particle size distribution of the abrasive.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31160294A JPH08168954A (en) | 1994-12-15 | 1994-12-15 | Method for preventing polishing flaw |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP31160294A JPH08168954A (en) | 1994-12-15 | 1994-12-15 | Method for preventing polishing flaw |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH08168954A true JPH08168954A (en) | 1996-07-02 |
Family
ID=18019231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP31160294A Pending JPH08168954A (en) | 1994-12-15 | 1994-12-15 | Method for preventing polishing flaw |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH08168954A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140536A (en) * | 2006-02-06 | 2006-06-01 | Hitachi Chem Co Ltd | Cerium oxide abrasive agent and method of polishing substrate |
JP2006186384A (en) * | 2006-02-06 | 2006-07-13 | Hitachi Chem Co Ltd | Cerium oxide abrasive and method for polishing substrate |
US7871308B2 (en) | 1997-12-18 | 2011-01-18 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
JP2023010682A (en) * | 2021-07-08 | 2023-01-20 | エスケーシー ソルミックス カンパニー,リミテッド | Polishing compositions for semiconductor process and method for manufacturing polished article using the same |
-
1994
- 1994-12-15 JP JP31160294A patent/JPH08168954A/en active Pending
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7871308B2 (en) | 1997-12-18 | 2011-01-18 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US7963825B2 (en) | 1997-12-18 | 2011-06-21 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US8137159B2 (en) | 1997-12-18 | 2012-03-20 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US8162725B2 (en) | 1997-12-18 | 2012-04-24 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
US8616936B2 (en) | 1997-12-18 | 2013-12-31 | Hitachi Chemical Company, Ltd. | Abrasive, method of polishing target member and process for producing semiconductor device |
JP2006140536A (en) * | 2006-02-06 | 2006-06-01 | Hitachi Chem Co Ltd | Cerium oxide abrasive agent and method of polishing substrate |
JP2006186384A (en) * | 2006-02-06 | 2006-07-13 | Hitachi Chem Co Ltd | Cerium oxide abrasive and method for polishing substrate |
JP2023010682A (en) * | 2021-07-08 | 2023-01-20 | エスケーシー ソルミックス カンパニー,リミテッド | Polishing compositions for semiconductor process and method for manufacturing polished article using the same |
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