JPH0774162A - Apparatus and method for vapor phase reaction - Google Patents
Apparatus and method for vapor phase reactionInfo
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- JPH0774162A JPH0774162A JP23914593A JP23914593A JPH0774162A JP H0774162 A JPH0774162 A JP H0774162A JP 23914593 A JP23914593 A JP 23914593A JP 23914593 A JP23914593 A JP 23914593A JP H0774162 A JPH0774162 A JP H0774162A
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- phase difference
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Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、気相反応装置の構成、
および気相反応方法に関する。さらに本発明は、気相反
応により、薄膜を形成する技術に関する。BACKGROUND OF THE INVENTION The present invention relates to a structure of a gas phase reaction apparatus,
And a gas phase reaction method. Further, the present invention relates to a technique for forming a thin film by a gas phase reaction.
【０００２】[0002]
【従来の技術】従来より気相反応により薄膜を形成する
技術が知られている。特に、平行平板型に構成された電
極の一方の電極上（一般に接地電位側）にガラス基板等
を配置し、電極間に高周波（例えば１３．５６ＭＨｚ）
を加えることで、気相反応を起こし、基板表面に半導体
膜や絶縁膜を形成する技術が広く知られている。2. Description of the Related Art Conventionally, a technique for forming a thin film by a gas phase reaction has been known. In particular, a glass substrate or the like is placed on one electrode (generally the ground potential side) of the parallel plate type electrodes, and a high frequency (eg 13.56 MHz) is placed between the electrodes.
There is widely known a technique of forming a semiconductor film or an insulating film on the surface of a substrate by causing a gas phase reaction by the addition of.
【０００３】一方、図１および図２および図３に示すよ
うな構成を有した気相反応装置が知られている。図１の
Ａ−Ａ’で切った断面図が図２であり、図２のＢ−Ｂで
切った断面が図３である。即ち、図１に示す装置を上面
から見た断面が図２であり、図１に示す装置を紙面右側
あるいは紙面左側から見た断面が図３である。On the other hand, there is known a gas phase reactor having a structure as shown in FIGS. 1, 2 and 3. 2 is a sectional view taken along the line AA ′ of FIG. 1, and FIG. 3 is a sectional view taken along the line BB of FIG. That is, FIG. 2 is a cross section of the device shown in FIG. 1 as seen from above, and FIG. 3 is a cross section of the device shown in FIG. 1 as seen from the right or left side of the drawing.
【０００４】以下において、この気相反応装置（一般に
ＣＶＤ装置、あるいはプラズマＣＶＤ装置といわれる）
の構成について説明する。図１に示す気相反応装置は、
真空容器１１内に一対の電極１４と１５を備えている。
そしてガス導入系から導入される反応性気体をこの一対
の電極間において行われる高周波放電によってプラズマ
気相反応させ、成膜を行うものである。In the following, this gas phase reaction apparatus (generally referred to as a CVD apparatus or a plasma CVD apparatus)
The configuration of will be described. The gas phase reactor shown in FIG.
A pair of electrodes 14 and 15 are provided in the vacuum container 11.
Then, the reactive gas introduced from the gas introduction system is caused to undergo a plasma vapor phase reaction by the high frequency discharge performed between the pair of electrodes to form a film.
【０００５】成膜が行われる基板は、基板ホルダー２５
に保持されている。基板は図１の２３、２４で示される
ように、上下に２枚を１組として保持される。また図
２、図３に示すように、基板は複数枚が平行に配置され
ている。そして基板ホルダー２５はアルミやステンレス
等の導体、あるいは石英、セラミック等の絶縁体で構成
され、枠構造を有している。The substrate on which the film is formed is the substrate holder 25.
Held in. As shown by 23 and 24 in FIG. 1, the substrates are held as a pair of upper and lower substrates. Further, as shown in FIGS. 2 and 3, a plurality of substrates are arranged in parallel. The substrate holder 25 is made of a conductor such as aluminum or stainless steel, or an insulator such as quartz or ceramic, and has a frame structure.
【０００６】反応性気体やキャリアガスさらには添加ガ
スは、ガス供給系１２より図２に示す基板ホルダー２５
上部のスリット２７から基板ホルダー内に導入され、一
対の電極１４、１５間に形成される放電空間に導かれ
る。ガス供給系より導入されるガスは、図１〜図３のｙ
方向に示す向きに従って図３の２８で示されるように流
れていく。この際に、基板ホルダーの内部で行われる気
相反応によって、基板表面に薄膜が形成される。The reactive gas, the carrier gas, and the additive gas are supplied from the gas supply system 12 to the substrate holder 25 shown in FIG.
It is introduced into the substrate holder through the upper slit 27 and guided to the discharge space formed between the pair of electrodes 14 and 15. The gas introduced from the gas supply system is y in FIGS.
Flows as indicated by 28 in FIG. 3 according to the direction indicated by the direction. At this time, a thin film is formed on the surface of the substrate by a gas phase reaction performed inside the substrate holder.
【０００７】また、不要になった反応性気体は排気系１
３より排気される。排気系１３には真空ポンプ２２が設
けられている。The reactive gas that has become unnecessary is exhausted from the exhaust system 1.
Exhausted from 3. The exhaust system 13 is provided with a vacuum pump 22.
【０００８】一対の電極１４、１５には、２つの高周波
電源２０、２１より位相が互いに１８０度ずれた位相差
をもった高周波が整合器１７、１８を介して加えられ
る。位相制御は、位相差制御器１９により行われる。High frequencies having a phase difference of 180 degrees from each other are applied to the pair of electrodes 14 and 15 from the two high frequency power sources 20 and 21 through the matching units 17 and 18. The phase control is performed by the phase difference controller 19.
【０００９】また、基板を加熱する必要がある場合は、
赤外線ランプ（図示せず）によって、基板ホルダー２５
を加熱し、基板を間接的に加熱する。When it is necessary to heat the substrate,
An infrared lamp (not shown) allows a substrate holder 25.
To heat the substrate indirectly.
【００１０】以上において説明した気相反応装置は、以
下の特徴を有している。 ・基板が一対の電極間に垂直に複数配置されるので、複
数の基板を同時に処理することができる。 ・気相反応が枠で囲まれた構造を有する基板ホルダー内
で行われるので、反応室内部に反応生成物がパーティク
ルとして残存する問題を低減できる。The gas phase reactor described above has the following features. Since a plurality of substrates are vertically arranged between the pair of electrodes, it is possible to simultaneously process a plurality of substrates. Since the gas phase reaction is carried out in the substrate holder having a structure surrounded by a frame, it is possible to reduce the problem that reaction products remain as particles in the reaction chamber.
【００１１】本発明者らは、上記の気相反応装置で数々
の成膜実験を行い、以下の実験事実を得た。なお基板の
大きさは４００ｍｍ×３００ｍｍのガラス基板を用い、
ｘ方向が４００ｍｍ、ｙ方向が３００ｍｍとなるように
配置した。The inventors of the present invention conducted a number of film formation experiments with the above-mentioned vapor phase reactor and obtained the following experimental facts. The size of the substrate is a glass substrate of 400 mm × 300 mm,
It was arranged so that the x direction was 400 mm and the y direction was 300 mm.
【００１２】図４、図５に示すのは、図１に示す装置を
用いて成膜実験を行った結果の膜厚分布を示すものであ
る。図４の横軸と図５の縦軸に示すのは、成膜速度（gr
owthrate)であるが、所定の時間（例えば成膜時間）を
乗ずれば膜厚として比較することができる。即ち図４の
横軸と図５縦軸は、成膜される膜厚として評価すること
ができる。また、図４の縦軸と図５の横軸は、図１〜３
に示されるｘ及びｙで示される座標を示す。この座標
は、原点をガラス基板の角の部分にとったものである。
従って、この座標と膜厚の関係を見ることで膜厚分布を
評価することができる。FIGS. 4 and 5 show the film thickness distribution as a result of a film deposition experiment using the apparatus shown in FIG. The horizontal axis of FIG. 4 and the vertical axis of FIG. 5 indicate the film formation rate (gr
The film thickness can be compared by multiplying it by a predetermined time (for example, film formation time). That is, the horizontal axis of FIG. 4 and the vertical axis of FIG. 5 can be evaluated as the film thickness to be formed. The vertical axis of FIG. 4 and the horizontal axis of FIG.
The coordinates indicated by x and y shown in FIG. These coordinates are obtained by taking the origin as a corner of the glass substrate.
Therefore, the film thickness distribution can be evaluated by looking at the relationship between the coordinates and the film thickness.
【００１３】図４の白丸印は、２つの基板（３００ｍｍ
幅が２枚で６００ｍｍ幅になる）のｙ方向における膜厚
分布を示すものである。（図３の黒丸印のプロット点に
ついては後述する）White circles in FIG. 4 indicate two substrates (300 mm).
It shows the film thickness distribution in the y direction when the width is two and the width is 600 mm. (The plot points with black circles in FIG. 3 will be described later)
【００１４】図５の白丸印、白四角印には、上下それぞ
れの基板の中央部分におけるｘ方向（４００ｍｍ幅）に
おける膜厚分布を示すものである。（図５の黒丸印、黒
四角印については後述する）The white circles and white squares in FIG. 5 indicate the film thickness distributions in the x direction (400 mm width) in the central portions of the upper and lower substrates, respectively. (The black circles and black squares in FIG. 5 will be described later)
【００１５】図５において、白丸印で示されるのは、図
１に示される上側の基板(upper substrate) のｘ方向の
膜厚分布であり、白四角印で示されるのは、下側の基板
(lower substrate) のｘ方向の膜厚分布である。図５に
おいて、白丸印のプロット点と白四角印のプロット点と
では、その形状が似ているが、その絶対値が異なってい
る。これは、図４の白丸印のプロット点を見れば分かる
ように、図１のｙ方向にいくに従って、膜厚が薄くなる
ことに関係する。即ち、図５の白丸印と白四角印は、上
側の基板の膜厚が下側の基板に比較して厚く成膜されて
しまうことを示している。In FIG. 5, the white circles indicate the film thickness distribution in the x direction of the upper substrate shown in FIG. 1, and the white squares indicate the lower substrate.
It is a film thickness distribution of the (lower substrate) in the x direction. In FIG. 5, the plot points of the white circles and the plot points of the white squares are similar in shape, but their absolute values are different. This is related to the film thickness becoming thinner in the y direction of FIG. 1, as can be seen from the plot points of the white circles in FIG. That is, the white circles and white squares in FIG. 5 indicate that the film thickness of the upper substrate is thicker than that of the lower substrate.
【００１６】なお、図４、図５に示す膜厚分布は、図２
に示す平行に複数配置された基板全てにおいて同様であ
る。即ち上下一組として配置された複数組の基板全てに
おいて、図４、図５に示すような膜厚分布が観察され
た。The film thickness distributions shown in FIGS. 4 and 5 are as shown in FIG.
The same applies to all the substrates arranged in parallel as shown in FIG. That is, the film thickness distributions as shown in FIGS. 4 and 5 were observed in all of the plurality of sets of substrates arranged as one set above and below.
【００１７】図４、図５から明らかなように、図１〜図
３に示すような構成を有する気相反応装置においては、
成膜される膜厚の不均一性という問題が存在する。即
ち、一対の電極間に電極とその面が垂直になるように基
板を配置し、電極間において放電を起こすことによって
成膜を行う気相反応装置は、 ・反応性気体の移動方向（図１でいうｙ方向）における
膜厚分布の不均一性 ・電極間方向（図１でいうｘ方向）における膜厚分布の
不均一性とが問題となる。As is apparent from FIGS. 4 and 5, in the gas phase reactor having the structure shown in FIGS.
There is the problem of non-uniformity of the deposited film thickness. That is, a gas phase reaction apparatus in which a substrate is arranged between a pair of electrodes so that the electrodes and the surface thereof are perpendicular to each other and a film is formed by generating an electric discharge between the electrodes is as follows: Non-uniformity of the film thickness distribution in the y direction) and non-uniformity of the film thickness distribution in the inter-electrode direction (the x direction in FIG. 1) are problems.
【００１８】また、この不均一性の問題は、それぞれ不
均一にする原因が独立であることが判明している。即
ち、電極間方向（図１〜図３でいうとｘ方向）における
膜厚分布の不均一性と、反応性気体の移動方向（図１〜
図３でいうとｙ方向）における膜厚分布の不均一性と
は、それぞれ独立した原因によるものであることが判明
している。Further, it has been found that the causes of the nonuniformity are independent of each other. That is, the non-uniformity of the film thickness distribution in the direction between the electrodes (the x direction in FIGS. 1 to 3) and the moving direction of the reactive gas (see FIGS. 1 to 3).
It has been found that the non-uniformity of the film thickness distribution in the y direction in FIG. 3) is due to independent causes.
【００１９】〔発明が解決しようとする課題〕本発明
は、一対の電極間に電極と垂直に基板を配置し、該基板
の表面に薄膜の成膜を行う構成において、成膜される薄
膜の膜厚分布の不均一性を解決することを目的とする。
具体的には、下記の２点の問題を解決することを目的と
する。 １．電極間方向における膜厚の不均一性を解決する。 ２．反応性気体の移動方向における膜厚の不均一性を解
決する。[Problems to be Solved by the Invention] The present invention provides a thin film to be formed in a structure in which a substrate is arranged between a pair of electrodes in a direction perpendicular to the electrodes and a thin film is formed on the surface of the substrate. The object is to solve the non-uniformity of the film thickness distribution.
Specifically, it aims to solve the following two problems. 1. To solve the non-uniformity of the film thickness in the direction between the electrodes. 2. To solve the non-uniformity of the film thickness in the moving direction of the reactive gas.
【００２０】〔課題を解決するための手段〕本発明は、
一対の電極間に少なくとも１枚の基板が基板面を電極面
に対して垂直にして配置された気相反応装置において、
下記の２点を主要な発明の構成とする。 ・一対の電極間に供給する高周波電力を間欠放電（パル
ス放電）とする。 ・それぞれの電極に供給する高周波電力に少なくとも２
つの位相差を非同時に与えて気相反応させる。[Means for Solving the Problems] The present invention is
In a gas phase reaction device in which at least one substrate is arranged between a pair of electrodes with the substrate surface perpendicular to the electrode surface,
The following two points are major invention components. -The high-frequency power supplied between the pair of electrodes is an intermittent discharge (pulse discharge).・ At least 2 for high frequency power supplied to each electrode
Gas phase reaction is performed by applying two phase differences non-simultaneously.
【００２１】それぞれの電極に供給する高周波電力に少
なくとも２つの位相差を非同時に与えて気相反応させる
動作の例を以下に示す。 （１）まず一対の電極にＸ度の位相差でもって高周波電
力を供給する。ここで、Ｘ度は任意の角度である。この
Ｘ度の位相差でもって高周波電力を供給する時間は、任
意である。 （２）上記（１）の動作に続いて、（Ｘ±１８０）度の
位相差でもって、一対の電極に高周波電力を供給する。The following is an example of an operation in which at least two phase differences are non-simultaneously applied to the high frequency power supplied to each electrode to cause a gas phase reaction. (1) First, high frequency power is supplied to the pair of electrodes with a phase difference of X degrees. Here, X degree is an arbitrary angle. The time for supplying the high frequency power with this phase difference of X degrees is arbitrary. (2) Following the operation of (1) above, high frequency power is supplied to the pair of electrodes with a phase difference of (X ± 180) degrees.
【００２２】例えば、Ｘ＝０度であれば、上記（１）に
示す動作過程において、一対の電極に同相（位相差０）
で高周波電力を供給し、次の動作過程（上記（２）の動
作過程に相当する）において、一対の電極に１８０度の
位相差で高周波電力を供給すればよい。For example, if X = 0 degree, in the operation process shown in (1) above, the pair of electrodes have the same phase (phase difference of 0).
Then, the high frequency power may be supplied to the pair of electrodes in the next operation process (corresponding to the operation process of (2) above) with a phase difference of 180 degrees.
【００２３】また、Ｘ＝−９０度（２７０度）であれ
ば、上記（１）の動作過程において、一対の電極に−９
０度の位相差で高周波電力を供給し、次の動作過程にお
いて、一対の電極に９０度の位相差で高周波電力を供給
すればよい。If X = -90 degrees (270 degrees), a pair of electrodes will be -9 in the operation process of (1).
High frequency power may be supplied with a phase difference of 0 degree, and high frequency power may be supplied to the pair of electrodes with a phase difference of 90 degrees in the next operation process.
【００２４】この（１）の動作過程と位相差と（２）の
動作過程の位相差との差は、１８０度であることが好ま
しいが、±２０％範囲で許容することができる。The difference between the phase difference between the operation process (1) and the phase difference between the operation process (2) is preferably 180 degrees, but can be allowed within a range of ± 20%.
【００２５】上記（１）と（２）の動作過程は、以下
(a) 〜(b) に示すような組み合わせでもって実施され
る。 (a) 始めに（１）の動作を所定の時間行い、引き続いて
（２）の動作を所定の時間行う。この際において、それ
ぞれの動作時間は、同じ場合もあるし、異なる場合もあ
る。 (b) （１）の動作と（２）の動作とを交互に繰り返して
行う。 (c) 所定時間内において、（１）の動作時間と（２）の
動作時間との割合が一定の比率になるようにする。The operation process of the above (1) and (2) is as follows.
The combination shown in (a) to (b) is carried out. (a) First, the operation (1) is performed for a predetermined time, and then the operation (2) is performed for a predetermined time. At this time, the respective operation times may be the same or different. (b) The operation (1) and the operation (2) are alternately repeated. (c) The ratio of the operation time of (1) to the operation time of (2) is set to be a constant ratio within a predetermined time.
【００２６】例えば、高周波電力を供給する時間の総計
が３０分間の場合において、（１）の動作時間と（２）
の動作時間の割合との比率を１：２とする場合、 ・（１）の動作時間を１０分とし、（２）の動作時間を
２０分とする。 ・（１）の動作時間を１分として、（２）の動作時間を
２分とする。そして、交互に１０回この動作を繰り返
す。 ・（１）の動作を１ｍｓｅｃとし、（２）の動作を２ｍ
ｓｅｃとする。そして、交互にこの動作を６００回繰り
返す。 といいった動作モードが考えられる。For example, when the total time of supplying the high frequency power is 30 minutes, the operation time of (1) and the operation time of (2)
When the ratio to the ratio of the operation time of is set to 1: 2, the operation time of (1) is set to 10 minutes and the operation time of (2) is set to 20 minutes. -The operation time of (1) is 1 minute and the operation time of (2) is 2 minutes. Then, this operation is alternately repeated 10 times.・ The operation of (1) is 1 msec, and the operation of (2) is 2 m
Let be sec. Then, this operation is alternately repeated 600 times. The operation mode called is conceivable.
【００２７】また、位相差放電の組み合わせの方法とし
ては、２種類の位相差の組み合わせに限られるものでは
ない。例えば、０度の位相差、１８０度の位相差、６０
度の位相差、２４０度の位相差、での放電を１分づつ行
い、計４分間の気相反応を行うこともできる。The method of combining the phase difference discharges is not limited to the combination of two types of phase difference discharges. For example, 0 degree phase difference, 180 degree phase difference, 60
It is also possible to perform the gas phase reaction for a total of 4 minutes by performing discharge for 1 minute at a phase difference of 240 degrees and a phase difference of 240 degrees.
【００２８】また、位相差が連続的に変化させる方法を
採用してもよい。例えば、一対の電極に加えられる高周
波電力の位相差が放電開始時に０度であり、放電終了時
に３６０度である１つのサイクルを考える。この場合、
始めは位相差０つまり同位相であるが、徐々に１度，２
度，３度と位相差がずれていき、３６０度の位相差すな
わち０度で同位相の戻る。Further, a method of continuously changing the phase difference may be adopted. For example, consider one cycle in which the phase difference of the high frequency power applied to the pair of electrodes is 0 degrees at the beginning of discharge and 360 degrees at the end of discharge. in this case,
Initially, the phase difference is 0, that is, the same phase, but gradually 1 degree, 2
The phase difference deviates from 3 degrees, and the same phase returns with a phase difference of 360 degrees, that is, 0 degree.
【００２９】実際には、上記のサイクル（位相差が０度
〜３６０度まで変化するのを１サイクルとする）が多数
回繰り返されて気相反応が行われる。In practice, the above-described cycle (a cycle in which the phase difference changes from 0 ° to 360 ° is defined as one cycle) is repeated many times to perform the gas phase reaction.
【００３０】上記構成を実現する方法としては、以下の
ような構成を考えることができる。一方の電極の電極に
供給さえる高周波電力と他方の電極に供給される高周波
電力との周波数を僅かに異ならせて気相反応をさせる。
このようにすると、それぞれの高周波電力の位相差が除
々に変化していき、位相差を連続して変化させる場合と
同様な効果を得ることができる。この高周波電力の周波
数の違いは、２０％程度以下であることが望ましい。The following configuration can be considered as a method for realizing the above configuration. The frequency of the high-frequency power supplied to the electrode of one electrode and the high-frequency power supplied to the other electrode is slightly different from each other to cause a gas phase reaction.
By doing so, the phase difference between the respective high-frequency powers gradually changes, and the same effect as in the case of continuously changing the phase difference can be obtained. The difference in the frequency of the high frequency power is preferably about 20% or less.
【００３１】本発明においては、一対の電極間に電磁エ
ネルギーを供給し、高周波放電を生じさせるものである
が、高周波の周波数は、特に限定されるものではない。
また、気相反応によって、薄膜の成膜を行うことが極め
て有効であり、膜厚分布の良好な薄膜形成を行うことが
できる。しかし、これは気相反応が均一に行われている
ことでもあるので、この気相反応方法を利用して気相エ
ッチングを行うことも有効である。In the present invention, electromagnetic energy is supplied between the pair of electrodes to generate high frequency discharge, but the frequency of the high frequency is not particularly limited.
Further, it is extremely effective to form a thin film by a gas phase reaction, and a thin film having a good film thickness distribution can be formed. However, since this also means that the gas phase reaction is carried out uniformly, it is also effective to carry out gas phase etching using this gas phase reaction method.
【００３２】[0032]
【作用】放電を間欠的に行うこと（一般にパルス放電と
いう）によって、反応性気体の有効利用を計り、反応性
気体の流れる方向における気相反応の均一性を高めるこ
とができる。特に、気相反応によって成膜を行う場合に
は、反応性気体の流れる方向における膜厚分布を著しく
向上させることができる。By performing the discharge intermittently (generally referred to as pulse discharge), it is possible to effectively use the reactive gas and enhance the uniformity of the gas phase reaction in the flowing direction of the reactive gas. In particular, when the film is formed by the gas phase reaction, the film thickness distribution in the flowing direction of the reactive gas can be significantly improved.
【００３３】一対の電極間に加えられる高周波エネルギ
ーの位相差を少なくとも２つ用い、その第１の位相差を
Ｘ度、第２の位相差を（Ｘ±１８０）度とすることによ
って、電極間方向における気相反応の均一性を向上させ
ることができる。特に、気相反応によって、成膜を行う
場合には、電極間方向における膜厚分布を著しく改善す
ることができる。By using at least two phase differences of the high-frequency energy applied between the pair of electrodes, the first phase difference being X degrees and the second phase difference being (X ± 180) degrees, the electrodes The uniformity of the gas phase reaction in the direction can be improved. In particular, when the film is formed by the gas phase reaction, the film thickness distribution in the direction between the electrodes can be remarkably improved.
【００３４】[0034]
【実施例】〔実施例１〕本実施例では、図１に示すプラ
ズマＣＶＤ装置において、ｙ方向の膜厚分布を改善する
例を示す。本実施例においては、図１に示すプラズマＣ
ＶＤ装置において、図６にそのブロック図を示すような
放電系を採用したこと特徴とする。[Embodiment 1] This embodiment shows an example of improving the film thickness distribution in the y direction in the plasma CVD apparatus shown in FIG. In this embodiment, the plasma C shown in FIG.
The VD device is characterized by adopting a discharge system whose block diagram is shown in FIG.
【００３５】本実施例は、一対の電極１４、１５から反
応空間（一対の電極間に形成される）に対して行われる
放電をパルス放電とするものである。In this embodiment, the discharge performed from the pair of electrodes 14 and 15 to the reaction space (formed between the pair of electrodes) is a pulse discharge.
【００３６】このために、図６に示すパルス発振器から
の信号を用いて、２つの高周波電源からの高周波をパル
ス発振させる。図６に示す放電系以外の構成は、図１〜
図３に示すのと同様である。For this purpose, the signals from the pulse oscillator shown in FIG. 6 are used to pulse-oscillate the high frequencies from the two high-frequency power sources. Configurations other than the discharge system shown in FIG.
It is similar to that shown in FIG.
【００３７】図６に示す放電系を用いると、高周波電源
をパルス放電させるための基準パルスをパルス発生器で
行ない、その信号によって２台の高周波電源をパルス放
電させることができる。２台の高周波電源から発振され
る高周波電力の位相差は、位相信号発生器によって制御
される。また、電極（１４または１５）と高周波電源と
の間には整合器があるため、電極上における位相差が制
御値からずれる可能性がある。従って、整合器の出口の
ところでの位相差を位相信号発生器にフィードバックさ
せて、位相制御を行う構成としている。When the discharge system shown in FIG. 6 is used, the reference pulse for pulse-discharging the high-frequency power source can be generated by the pulse generator, and the two high-frequency power sources can be pulse-discharged by the signal. The phase difference between the high frequency powers oscillated from the two high frequency power supplies is controlled by the phase signal generator. Further, since there is a matching device between the electrode (14 or 15) and the high frequency power source, the phase difference on the electrode may deviate from the control value. Therefore, the phase control is performed by feeding back the phase difference at the exit of the matching device to the phase signal generator.
【００３８】パルス発生器は、高周波電源をパルス駆動
するためのものである。パルス発生器によって、どの様
な高周波電力が出力されるかを図７に示す。パルス発生
器からの信号によって、高周波電源がＯＮ，ＯＦＦさ
れ、パルス状に高周波電力が一対の電極に印加される。The pulse generator is for pulse driving the high frequency power supply. FIG. 7 shows what kind of high frequency power is output by the pulse generator. A high-frequency power source is turned on and off by a signal from the pulse generator, and high-frequency power is applied to the pair of electrodes in a pulse shape.
【００３９】このシステムでは、−１０Ｖがパルス発生
器から出力された場合に、高周波電源がＯＮ状態にな
る。この様子を図７に示す。また、本実施例において
は、一対の電極１４と１５に供給される高周波電力の位
相差は１８０度に固定してある。In this system, the high frequency power supply is turned on when -10 V is output from the pulse generator. This state is shown in FIG. Further, in the present embodiment, the phase difference of the high frequency power supplied to the pair of electrodes 14 and 15 is fixed to 180 degrees.
【００４０】成膜に当たっては、図１〜図３に示すよう
に、ガラス基板（４００ｍｍ×３００ｍｍ）を２枚一組
で配置し、計１２枚の基板に同時に成膜する構成とし
た。For film formation, as shown in FIGS. 1 to 3, two glass substrates (400 mm × 300 mm) were arranged in a set, and a total of 12 substrates were formed simultaneously.
【００４１】以下に成膜条件を示す。 反応性基体 ＳｉＨ4 ／ＮＨ3 ＝２００／１０００ｓ
ｃｃｍ 高周波電力 ４ｋＷ（１３．５６ＭＨｚ）×２ 位相差 １８０度 パルス周波数 １００Ｈｚ（duty比５０％） 加熱温度 ３５０℃ 上記成膜条件は、図７に示すような放電形態において、
放電時間を５ｍｓｅｃとして、休止時間を５ｍｓｅｃと
した場合である。この放電形態は、duty比が５０％のパ
ルス放電を１００Ｈｚの繰り返し周波数、あるいはパル
ス周波数で行ったものといえる。duty比とは、（放電時
間／（放電時間＋休止時間））を示すものである。例え
ば、パルス周波数１００Ｈｚでduty比を１０％としたパ
ルス放電の場合は、１ｍｓｅｃの放電と９ｍｓｅｃの休
止とを繰り返す放電形態となる。The film forming conditions are shown below. Reactive substrate SiH 4 / NH 3 = 200 / 1000s
ccm High frequency power 4 kW (13.56 MHz) × 2 Phase difference 180 degrees Pulse frequency 100 Hz (duty ratio 50%) Heating temperature 350 ° C. The film forming conditions are as follows in the discharge mode as shown in FIG.
This is a case where the discharge time is 5 msec and the rest time is 5 msec. It can be said that this discharge form is a pulse discharge having a duty ratio of 50% at a repetition frequency of 100 Hz or a pulse frequency. The duty ratio indicates (discharge time / (discharge time + pause time)). For example, in the case of pulse discharge with a pulse frequency of 100 Hz and a duty ratio of 10%, a discharge mode in which discharge of 1 msec and pause of 9 msec are repeated.
【００４２】上記条件により成膜されたｙ方向の膜厚分
布を図４の黒丸印で示す。図４を見れば明らかなよう
に、ｙ方向の膜厚分布は大きく改善することができる。The film thickness distribution in the y direction formed under the above conditions is shown by black circles in FIG. As is clear from FIG. 4, the film thickness distribution in the y direction can be greatly improved.
【００４３】また上記条件において成膜を行った際のｘ
方向の膜厚分布を図５の白四角印と黒四角印とで示す。
図４に示すようにｙ方向の膜厚分布のバラツキが改善さ
れたことを反映して、上側の基板と下側の基板とで、ほ
とんど同じ膜厚分布を示している。しかし、図５に示す
ｘ方向の波打った膜厚分布は改善されていない。Further, x when the film is formed under the above conditions
The film thickness distribution in the direction is shown by the white square marks and the black square marks in FIG.
As shown in FIG. 4, reflecting the improvement in the variation in the film thickness distribution in the y direction, the upper substrate and the lower substrate show almost the same film thickness distribution. However, the wavy film thickness distribution in the x direction shown in FIG. 5 is not improved.
【００４４】上記ようにパルス放電とすることで、ｙ方
向の膜厚分布の改善、即ち反応性気体の流れる方向にお
ける膜厚分布の改善が得られることが分かる。一方ｘ方
向、即ち反応性気体の流れる方向と垂直な方向における
膜厚分布は、ほとんど改善されないことが分かる。It is understood that the pulse discharge as described above can improve the film thickness distribution in the y direction, that is, the film thickness distribution in the direction in which the reactive gas flows. On the other hand, it can be seen that the film thickness distribution in the x direction, that is, in the direction perpendicular to the flowing direction of the reactive gas, is hardly improved.
【００４５】以上のことから、以下のことが結論され
る。 １．パルス放電は、反応性気体の流れる方向における膜
厚分布を改善し、この方向における平坦な膜厚分布を実
現するのに大きな効果がある。 ２．パルス放電は、反応性気体の流れる方向と垂直な方
向における膜厚分布には、ほとんど影響を与えない。From the above, the following can be concluded. 1. The pulse discharge has a great effect in improving the film thickness distribution in the direction in which the reactive gas flows and realizing a flat film thickness distribution in this direction. 2. The pulse discharge has almost no effect on the film thickness distribution in the direction perpendicular to the direction in which the reactive gas flows.
【００４６】〔パルス放電の作用効果について〕以下に
おいて、パルス放電の作用効果について考察する。ま
ず、図１〜図３に示す装置において、ｙ方向の膜厚分布
が図４の白丸印で示されるようになる現象について考察
する。図１〜図３に示す装置においては、反応性気体が
ガス導入系１２から図２のスリット２７で示される部分
を通して、反応室内に導入される。そして、反応室内を
ｙ方向に移動しながら、排気系１３から排気される。[Operational Effect of Pulse Discharge] The operational effect of pulsed discharge will be discussed below. First, in the apparatus shown in FIGS. 1 to 3, a phenomenon in which the film thickness distribution in the y direction becomes as indicated by the white circles in FIG. 4 will be considered. In the apparatus shown in FIGS. 1 to 3, the reactive gas is introduced into the reaction chamber from the gas introduction system 12 through the portion indicated by the slit 27 in FIG. Then, the gas is exhausted from the exhaust system 13 while moving in the reaction chamber in the y direction.
【００４７】この際反応性気体は、基板表面に沿う方向
で移動していき、一対の電極１４、１５から印加される
高周波によってプラズマ化（一般に活性化といわれる）
され、基板表面に薄膜として堆積されていく。この際、
反応空間（電極間の空間）において、反応性気体は図８
に示されるような様子で減少していくと考えられる。即
ち、反応性気体が移動していくに従って、徐々に膜とし
て堆積する分、反応性気体の残量は減少していくものと
考えられる。また換言すれば、薄膜に寄与する反応性気
体の成分は、図７に示すように移動に従って徐々に減少
していくと考えられる。At this time, the reactive gas moves in a direction along the surface of the substrate and is turned into plasma (generally called activation) by the high frequency applied from the pair of electrodes 14 and 15.
And is deposited as a thin film on the surface of the substrate. On this occasion,
In the reaction space (the space between the electrodes), the reactive gas is shown in FIG.
It is thought that the number will decrease as shown in. That is, it is considered that as the reactive gas moves, the residual amount of the reactive gas decreases as much as the film is deposited as a film. In other words, it is considered that the reactive gas components that contribute to the thin film gradually decrease as they move, as shown in FIG.
【００４８】この結果、図４の白丸印で示されるよう
に、ｙ方向に向かって徐々に成膜速度（膜厚に対応す
る）が低下した分布が得られるものと考えられる。例え
ば、前述のように反応性気体としてＳｉＨ4 とＮＨ3 を
用い、その流量を２００／１０００ｓｃｃｍとした場
合、反応性気体が反応空間を通り過ぎるのは、約２秒と
計算されるが、この約２秒の間に反応性気体は徐々に消
費されていき、結果として図４の白丸印で示されるよう
な成膜速度が観察されると考えられる。As a result, as indicated by the white circles in FIG. 4, it is considered that a distribution in which the film formation rate (corresponding to the film thickness) gradually decreases in the y direction can be obtained. For example, when SiH 4 and NH 3 are used as the reactive gas and the flow rate is set to 200/1000 sccm as described above, it is calculated that the reactive gas passes through the reaction space for about 2 seconds. It is considered that the reactive gas is gradually consumed during 2 seconds, and as a result, the film formation rate as indicated by the white circles in FIG. 4 is observed.
【００４９】ここでパルス放電を行った場合について考
察する。パルス放電を行った場合、所定時間内において
反応性気体に電磁エネルギーが供給され、その後所定時
間放電が停止し、その間は電磁エネルギーの供給が停止
する。この放電が停止している間は反応性気体の消費は
ほとんどされない。従って、単純に考えても反応性気体
の消費率は約５０％減少する。Here, the case where pulse discharge is performed will be considered. When pulse discharge is performed, electromagnetic energy is supplied to the reactive gas within a predetermined time, and then discharge is stopped for a predetermined time, during which the supply of electromagnetic energy is stopped. The reactive gas is scarcely consumed while the discharge is stopped. Therefore, even if simply considered, the consumption rate of the reactive gas is reduced by about 50%.
【００５０】以上の考察から、図４の白丸印で示される
膜厚分布が改善されることが理解される。しかし、上記
の理由のみによって、図４の黒丸印で示されるようにｙ
方向（反応性気体の流れる方向）の膜厚分布が改善され
ると考えにくい。From the above consideration, it is understood that the film thickness distribution shown by the white circles in FIG. 4 is improved. However, for the above reasons only, as indicated by the black circles in FIG.
It is unlikely that the film thickness distribution in the direction (the direction in which the reactive gas flows) will be improved.
【００５１】そこで以下のようなことが考えられる。連
続放電においては、成膜空間中に形成される大きな粒子
（クラスタ状の粒子）がつぎつぎに成長しその多くがパ
ーティクル（塵）となる。このパーティクルは、成膜に
直接寄与せずに消費される。一方、パルス放電（間欠放
電）を行った場合には、大きな粒子が形成される時間が
制限されるので、パーティクルとして消費される反応性
気体の損失が少なく、成膜に寄与する原料成分が多くな
るものと考えられる。従って、ｙ方向に反応性気体が移
動していっても反応性気体の損失が少なく、図４の黒丸
印で示すような均一な膜厚分布が得られるものと考えら
れる。Therefore, the following can be considered. In continuous discharge, large particles (cluster-shaped particles) formed in the film formation space grow one after another, and most of them become particles (dust). The particles are consumed without directly contributing to the film formation. On the other hand, when pulse discharge (intermittent discharge) is performed, the time during which large particles are formed is limited, so there is little loss of reactive gas consumed as particles, and there are many raw material components that contribute to film formation. It is supposed to be. Therefore, it is considered that even if the reactive gas moves in the y direction, the loss of the reactive gas is small and a uniform film thickness distribution as shown by the black circles in FIG. 4 can be obtained.
【００５２】また、パルス放電によって膜として堆積し
やすい短寿命のラジカルの生成率が低下し、相対的に長
寿命のラジカルの数が多くなるので、先に消費されてし
まう短寿命のラジカル成分の影響を抑制することがで
き、結果として、図４の黒丸印で示されるような平坦な
膜厚分布が得られるものと考えることもできる。Further, the generation rate of short-lived radicals that are easily deposited as a film by the pulse discharge is reduced, and the number of relatively long-lived radicals is increased. It can be considered that the influence can be suppressed, and as a result, the flat film thickness distribution as shown by the black circles in FIG. 4 can be obtained.
【００５３】本実施例においては、放電時間を５ｍｍｓ
ｅｃ、休止時間を５ｍｓｅｃとして、duty比を５０％、
周波数１００Ｈｚのパルス放電としたが。duty比や周波
数を他の値としてもよい。さらには、放電間隔と休止間
隔とが変化するようなパルス放電形態を採用してもよ
い。また成膜される薄膜も特に制限されるものではな
く、一般にプラズマ気相法で成膜される薄膜の形成に適
用することができる。即ち、反応性気体としては、Ｓｉ
Ｈ4 やＮＨ3 に限定されるものではなく、公知の反応性
気体を利用することができる。また、公知のエッチング
用の反応性気体を利用すれば、エッチングも可能であ
る。In this embodiment, the discharge time is 5 mms.
ec, rest time 5 msec, duty ratio 50%,
Although a pulse discharge having a frequency of 100 Hz was used. The duty ratio and frequency may be other values. Furthermore, a pulse discharge mode in which the discharge interval and the rest interval change may be adopted. The thin film to be formed is not particularly limited, and can be generally applied to the formation of a thin film formed by the plasma vapor phase method. That is, as the reactive gas, Si
The reactive gas is not limited to H 4 and NH 3 , and a known reactive gas can be used. Further, etching can be performed by using a known reactive gas for etching.
【００５４】〔実施例２〕本実施例は、実施例１に示し
たパルス放電によって、成膜される膜のステップカバレ
ージ（段差被覆性）が改善されることに関する。一般に
プラズマＣＶＤ法で薄膜を成膜する場合、ステップカバ
レージが問題となる。[Embodiment 2] This embodiment relates to improvement of the step coverage (step coverage) of a film to be formed by the pulse discharge shown in Embodiment 1. Generally, when forming a thin film by the plasma CVD method, step coverage becomes a problem.
【００５５】例えば、図１〜図３に示すプラズマＣＶＤ
装置においても同様の問題がある。以下において、図１
〜図３に示すプラズマＣＶＤ装置を用い、窒化珪素膜を
形成した例について以下に説明する。For example, the plasma CVD shown in FIGS.
The same problem occurs in the device. In the following, FIG.
~ An example of forming a silicon nitride film using the plasma CVD apparatus shown in Fig. 3 will be described below.
【００５６】まず成膜条件について説明する。 圧力 １５ｍＴｏｒｒ 高周波電力 ５００Ｗ（１３．５６ＭＨｚ）×２ 反応性気体 ＳｉＨ4 ／ＮＨ3 ＝２７／２６３ｓｃｃ
ｍ 位相差 １８０度 加熱温度 ３５０℃First, the film forming conditions will be described. Pressure 15 mTorr High frequency power 500 W (13.56 MHz) × 2 Reactive gas SiH 4 / NH 3 = 27/263 scc
m Phase difference 180 degrees Heating temperature 350 ° C
【００５７】上記成膜条件によって、ガラス基板上に形
成された島状のタンタルのパターン（以下アイランドと
いう）に５０００Åの厚さに窒化珪素膜を成膜した模式
図を図９に示す。図９（Ａ）には、ガラス基板９１上に
形成された厚さ３０００Åのタンタルのアイランド９２
の表面を覆って窒化珪素膜９３を成膜した場合の状態が
示されている。FIG. 9 shows a schematic view in which a silicon nitride film having a thickness of 5000 Å is formed on an island-shaped tantalum pattern (hereinafter referred to as an island) formed on a glass substrate under the above film forming conditions. FIG. 9A shows a 3000 Å-thick tantalum island 92 formed on a glass substrate 91.
The state in which the silicon nitride film 93 is formed so as to cover the surface of is shown.
【００５８】図９（Ａ）に示すように、アイランド９２
を覆って形成された窒化珪素膜９３は、アイランド端部
９４において、そのステップカバレージ（段差被覆性）
が非常に悪くなる。As shown in FIG. 9A, the island 92
The silicon nitride film 93 formed so as to cover the surface of the island has a step coverage (step coverage) at the island end portion 94.
Becomes very bad.
【００５９】一般にステップカバレージは、成膜圧力が
高いと良くなり、成膜圧力が低いと悪くなる傾向があ
る。これは、成膜圧力が高いと、分子やラジカルの平均
自由工程が短くなるので、アイランドの側面にも分子や
ラジカルが入り込みやすくなり、被覆性が改善されるか
らである。逆に、成膜圧力が低いと、分子やラジカルの
平均自由工程が長くなるので、アイランドの側面に分子
やラジカルが入り込みにくくなり、ステップカバレージ
は悪化する。In general, the step coverage tends to be improved when the film forming pressure is high, and deteriorated when the film forming pressure is low. This is because when the film forming pressure is high, the mean free path of the molecules and radicals is shortened, so that the molecules and radicals easily enter the side surfaces of the island and the coverage is improved. On the contrary, when the film forming pressure is low, the mean free path of molecules and radicals becomes long, so that it becomes difficult for molecules and radicals to enter the side surface of the island, and the step coverage deteriorates.
【００６０】以上の議論から、成膜圧力を高くすること
によって、ステップカバレージを改善する方法が考えら
れる。しかしながら、上記成膜条件において成膜圧力を
１５ｍＴｏｒｒから１００ｍＴｏｒｒとして成膜実験を
行ってみても、ステップカバレージはそれほど改善され
ないことが確認されている。From the above discussion, a method of improving the step coverage by increasing the film forming pressure can be considered. However, it has been confirmed that the step coverage is not improved so much even when a film forming experiment is performed under the above film forming conditions with the film forming pressure changed from 15 mTorr to 100 mTorr.
【００６１】そこで、以下の成膜条件によって成膜を行
ったところ、図９（Ｂ）に示すように、良好なステップ
カバレージを実現できることが確認された。 圧力 １００ｍＴｏｒｒ 高周波波力 ５００Ｗ（１３．５６ＭＨｚ）×２ 反応性気体 ＳｉＨ4 ／ＮＨ3 ＝２７／２６３ｓｃｃ
ｍ 位相差 １８０度 加熱温度 ３５０℃ パルス周波数 １００Ｈｚ（duty比５０％）Therefore, when film formation was performed under the following film formation conditions, it was confirmed that good step coverage could be realized as shown in FIG. 9 (B). Pressure 100mTorr High frequency wave power 500W (13.56MHz) × 2 Reactive gas SiH 4 / NH 3 = 27 / 263scc
m Phase difference 180 degrees Heating temperature 350 ° C Pulse frequency 100Hz (duty ratio 50%)
【００６２】上記の成膜条件で得られた窒化珪素膜のス
テップカバレージが良好であった理由は、以下のように
考えられる。The reason why the step coverage of the silicon nitride film obtained under the above film forming conditions is good is considered as follows.
【００６３】パルス放電を行うことによって、被膜形成
物表面のイオンシースが間欠的に消滅する状態が実現さ
れるので、イオンシースによってプラズマ空間から被形
成面に向かって加速されるイオンが少なくなり、結果と
してラジカルの回り込みを高めることができる。By performing pulse discharge, a state where the ion sheath on the surface of the coating film disappears intermittently is realized, so that the number of ions accelerated from the plasma space toward the surface to be formed by the ion sheath decreases, As a result, the wraparound of radicals can be increased.
【００６４】即ち、成膜圧力を低くし、しかもパルス放
電を行うことによって、ラジカルが図９に示すアイラン
ド９２の端部側面に回り込む状態が実現されるので、ス
テップカバレージが改善されると考えることができる。That is, by reducing the film forming pressure and performing the pulse discharge, the radicals are allowed to wrap around the side surfaces of the ends of the island 92 shown in FIG. 9, and it is considered that the step coverage is improved. You can
【００６５】また、成膜圧力を１５ｍＴｏｒｒとしたま
までパルス放電（パルス周波数１００Ｈｚ、duty比５０
％）を行った場合にも、図９（Ｂ）程の顕著なステップ
カバレージの改善は得られなかったが、かなり良好なス
テップカバレージを得ることができた。このような効果
が得られたのは、パルス放電によって、ラジカルがアイ
ランド９２の端部側面に回り込む為と考えられる。Pulse discharge (pulse frequency: 100 Hz, duty ratio: 50) with the film forming pressure kept at 15 mTorr.
%), The remarkable improvement in step coverage as in FIG. 9B was not obtained, but a fairly good step coverage could be obtained. It is considered that such an effect is obtained because the radicals wrap around to the side surface of the end portion of the island 92 by the pulse discharge.
【００６６】〔実施例３〕本実施例は、図１〜図３のｘ
方向における膜厚分布の不均一性を改善する構成に関す
る。まず、図１〜図３に示す装置において、図６に示す
放電系を使用し、一対の電極１７と１８とに加えられる
高周波電力の位相差を０〜２７０度の間で変化させた場
合の、ｘ方向における珪素薄膜の膜厚分布を図１０に示
す。この際の成膜条件を以下に示す。 反応性気体 ＳｉＨ4 ＝３００ｓｃｃｍ 高周波電力 ５００Ｗ（１３．５６ＭＨｚ）×２ 加熱温度 ２５０℃ 成膜圧力 １０ｍＴｏｒｒ パルス周波数 １００Ｈｚ（duty比50％）[Embodiment 3] This embodiment is based on x in FIGS.
The present invention relates to a configuration for improving nonuniformity of film thickness distribution in the direction. First, in the device shown in FIGS. 1 to 3, when the discharge system shown in FIG. 6 is used and the phase difference of the high frequency power applied to the pair of electrodes 17 and 18 is changed between 0 and 270 degrees. 10 shows the film thickness distribution of the silicon thin film in the x and x directions. The film forming conditions at this time are shown below. Reactive gas SiH 4 = 300 sccm High frequency power 500 W (13.56 MHz) × 2 Heating temperature 250 ° C. Film forming pressure 10 mTorr Pulse frequency 100 Hz (duty ratio 50%)
【００６７】図１０において、φは位相差を表し、uppe
r substrate は上側の基板、lowersubstrate は下側の
基板を示す。基板は、４００ｍｍ×３００ｍｍのものを
用い、図１〜図３に示すように、２枚を１組として縦に
並べて基板ホルダー２５に配置される。In FIG. 10, φ represents a phase difference, and uppe
r substrate is the upper substrate and lower substrate is the lower substrate. A substrate having a size of 400 mm × 300 mm is used, and as shown in FIGS. 1 to 3, two substrates are set as a set and arranged vertically in a substrate holder 25.
【００６８】図１０を見るれば明らかなように、上側の
基板２３（図１参照）と下側の基板（図１参照）とで、
ほとんど同じ膜厚分布となっている。これは、パルス放
電の効果によるものと考えられる。As is apparent from FIG. 10, the upper substrate 23 (see FIG. 1) and the lower substrate (see FIG. 1)
The film thickness distribution is almost the same. This is considered to be due to the effect of pulse discharge.
【００６９】さらに図１０見ると、一対の電極１４と１
５とに加えられる高周波電力の位相差を変化させること
で、膜厚分布の形状が位相差に従ってシフトする様子が
分かる。Further referring to FIG. 10, a pair of electrodes 14 and 1
It can be seen that the shape of the film thickness distribution shifts according to the phase difference by changing the phase difference of the high-frequency power applied to 5 and 5.
【００７０】また、上記成膜条件において、位相差を０
度にして５分間成膜を行い、次に位相差を１８０度にし
て５分間の成膜を行った場合のｘ方向の膜厚分布を図１
１に示す。図１１を見ればわかるように、０度の位相差
と１８０度の位相差とを組み合わせることにより、ｘ方
向、即ち電極間方向における均一な膜厚分布を得られる
ことが分かる。Under the above film forming conditions, the phase difference is 0.
FIG. 1 shows a film thickness distribution in the x direction when a film is formed for 5 minutes at a temperature of 5 degrees, and then for 5 minutes at a phase difference of 180 degrees.
Shown in 1. As can be seen from FIG. 11, it can be seen that a uniform film thickness distribution in the x direction, that is, the direction between the electrodes can be obtained by combining the phase difference of 0 degree and the phase difference of 180 degrees.
【００７１】ここでは、位相差を０度にして所定時間の
成膜を行い、つぎに位相差を１８０度にして同じ所定時
間の成膜を行った例を示した。しかし、例えばパルス周
波数１００Ｈｚのパルス放電を行う場合において、ｎ回
目のパルスの時を０度の位相差とし、ｎ＋１回目のパル
スを１８０度の位相差とし、さらにｎ＋２回目のパルス
を０度の位相差とする、という様にパルスの繰り返しに
応じてそれぞれの位相差で交互に放電を行う方法でも同
様な効果を得ることができる。また、所定時間内におい
て、０度の位相差の放電と１８０度位相差の放電とが同
じ回数になるようにパルス放電を行うのでもよい。Here, an example is shown in which the phase difference is 0 degree and film formation is performed for a predetermined time, and then the phase difference is 180 degree and film formation is performed for the same predetermined time. However, for example, in the case of performing pulse discharge at a pulse frequency of 100 Hz, the nth pulse has a phase difference of 0 degree, the (n + 1) th pulse has a phase difference of 180 degrees, and the (n + 2) th pulse has a phase difference of 0 degree. The same effect can be obtained by a method of alternately discharging with each phase difference according to the repetition of the pulse, such as the phase difference. Further, the pulse discharge may be performed so that the discharge having the phase difference of 0 degree and the discharge having the phase difference of 180 degrees are the same number of times within a predetermined time.
【００７２】また、それぞれの位相差における放電時
間、あるいは回数（パルス放電の回数）を異ならせて、
より平坦な膜厚分布が得られるようにしてもよい。例え
ば、図１１の白または黒の三角印で示される膜厚分布
は、中央部でやや盛り上がっている。これは四角印で示
される位相差１８０度の場合の影響が大きいものと考え
ることができる。そこで、丸印で示される位相差０度の
放電時間（成膜時間）を長くすることで、より平坦な膜
厚分布を期待することができる。例えば、所定時間内の
パルス放電の回数の割合を、位相差１８０度：位相差０
度＝９：１０とすることによって、さらに平坦な膜厚分
布を得ることができる。Further, the discharge time or the number of times (the number of pulse discharges) at each phase difference is made different,
A flatter film thickness distribution may be obtained. For example, the film thickness distribution indicated by white or black triangles in FIG. 11 is slightly raised in the central portion. This can be considered to have a large influence when the phase difference indicated by a square mark is 180 degrees. Therefore, by extending the discharge time (film formation time) indicated by a circle with a phase difference of 0 degrees, a flatter film thickness distribution can be expected. For example, the ratio of the number of times of pulse discharge within a predetermined time is calculated as phase difference 180 degrees: phase difference 0
By setting the degree = 9: 10, a flatter film thickness distribution can be obtained.
【００７３】以上のように一対の電極に加えられる高周
波電力の位相差を異ならせた成膜条件を組み合わせるこ
とにより、電極間方向における膜厚分布を改善すること
ができる。As described above, the film thickness distribution in the inter-electrode direction can be improved by combining the film forming conditions in which the phase difference of the high frequency power applied to the pair of electrodes is different.
【００７４】一方、電極間方向に垂直な方向（図１でい
うとｙ方向）における膜厚分布には、一対の電極に加え
られる高周波電力の位相差を変化させても、ほとんどそ
の影響は見られない。On the other hand, the film thickness distribution in the direction perpendicular to the direction between the electrodes (the y direction in FIG. 1) shows almost no effect even if the phase difference of the high frequency power applied to the pair of electrodes is changed. I can't.
【００７５】このことから、上記一対の電極に加えられ
る高周波電力の位相差を変化させる手法は、当該電極間
方向における膜厚分布を独立に制御できるものであり、
その分布を大きく改善できることが結論される。From this, the method of changing the phase difference of the high frequency power applied to the pair of electrodes can independently control the film thickness distribution in the direction between the electrodes,
It is concluded that the distribution can be greatly improved.
【００７６】当然、上記の効果は、パルス放電を行わな
い場合でも得ることができる。この場合、図１〜図３の
ｙ方向の膜厚分布が図４の白丸印で示されるように悪化
するだけで、ｘ方向の膜厚分布は平坦とすることができ
る。例えば、パルス放電を行わずに図１１に示す様な成
膜を行った場合、白の三角印のプロット点と黒の三角印
のプロット点とは平坦な膜厚分布を示すが、上下の基板
で膜厚が異なることになるので、それらのプロット点で
示される曲線の位置は異なることによる。これは、他の
丸印や四角印においても同様である。この場合、その曲
線の形を保ったままで、その位置がずれることになる。Naturally, the above effect can be obtained even when the pulse discharge is not performed. In this case, the film thickness distribution in the x direction can be made flat by merely deteriorating the film thickness distribution in the y direction in FIGS. 1 to 3 as indicated by the white circles in FIG. For example, when the film formation as shown in FIG. 11 is performed without pulse discharge, the plot points of the white triangle marks and the plot points of the black triangle marks show a flat film thickness distribution, but the upper and lower substrates Since the film thickness is different at, the position of the curve indicated by those plot points is different. This also applies to other circles and squares. In this case, the position shifts while keeping the shape of the curve.
【００７７】〔実施例４〕本実施例は、実施例３の構成
において、位相差φを＋９０度と−９０度とした場合の
例である。位相差以外の成膜条件を以下に示す。[Embodiment 4] This embodiment is an example in which the phase difference φ is +90 degrees and -90 degrees in the configuration of the third embodiment. The film forming conditions other than the phase difference are shown below.
【００７８】（成膜条件） 反応性気体 ＳｉＨ4 ３００ｓｃｃｍ 高周波電力 ５００Ｗ（１３．５６ＭＨｚ）×２ 加熱温度 ２５０℃ 成膜圧力 １０ｍＴｏｒｒ パルス周波数 １００Ｈｚ（duty比５０％）(Film forming conditions) Reactive gas SiH 4 300 sccm High frequency power 500 W (13.56 MHz) × 2 Heating temperature 250 ° C. Film forming pressure 10 mTorr Pulse frequency 100 Hz (duty ratio 50%)
【００７９】図１２に示すように、上記成膜条件におい
て、＋９０度位相差の場合と−９０度の位相差の場合と
では、そのｘ方向における膜厚分布が波打っている。そ
こで、＋９０度の位相差で５分間の成膜を行い、−９０
度の位相差で５分間の成膜を行った場合の膜厚分布を三
角印で示す。As shown in FIG. 12, under the above film forming conditions, the film thickness distribution in the x direction is wavy between the case of +90 degree phase difference and the case of −90 degree phase difference. Therefore, film formation is performed for 5 minutes with a phase difference of +90 degrees, and −90
The film thickness distribution when the film formation is performed for 5 minutes with the phase difference of 3 degrees is indicated by triangle marks.
【００８０】図１２から分かるように、＋９０度と−９
０度とで、同じ時間ずつ成膜を行うことによって、膜厚
分布が改善されることが分かる。As can be seen from FIG. 12, +90 degrees and -9
It can be seen that the film thickness distribution is improved by performing film formation at 0 degree for the same time.
【００８１】〔実施例５〕本実施例は、実施例３の構成
において、位相差を０度と１８０度とし、以下の条件で
窒化珪素膜を成膜した例である。[Embodiment 5] This embodiment is an example of forming a silicon nitride film under the following conditions with a phase difference of 0 ° and 180 ° in the structure of Embodiment 3.
【００８２】（成膜条件） 反応性気体 ＳｉＨ4 ／ＮＨ3 ＝５００／１５００ｓ
ｃｃｍ 高周波電力 ４ｋＷ（１３．５６ＭＨｚ）×２ 成膜圧力 ３０ｍＴｏｒｒ 加熱温度 ３５０℃ パルス周波数 １００Ｈｚ(duty 比５０％）(Film Forming Conditions) Reactive Gas SiH 4 / NH 3 = 500 / 1500s
ccm High frequency power 4 kW (13.56 MHz) × 2 Film formation pressure 30 mTorr Heating temperature 350 ° C. Pulse frequency 100 Hz (duty ratio 50%)
【００８３】図１３において、黒と白の三角印で示され
ているのは、０度の位相差で１０分間の成膜を行い、引
続いて１８０度の位相差で５分間の成膜を行った場合の
ｘ方向の膜厚分布（正確には成膜速度）を示すものであ
る。図１３を見れば明らかなように、位相差による成膜
速度の違いを反映させて成膜時間を異ならせることによ
って、ｘ方向における平坦な膜厚分布を得ることができ
る。In FIG. 13, black and white triangle marks indicate that film formation was performed for 10 minutes with a phase difference of 0 degree, and then film formation was performed for 5 minutes with a phase difference of 180 degrees. It shows the film thickness distribution in the x direction (to be exact, the film forming speed) when it is performed. As is clear from FIG. 13, a flat film thickness distribution in the x direction can be obtained by reflecting the difference in the film forming rate due to the phase difference and making the film forming time different.
【００８４】また、０度のパルス放電の回数と１８０度
の放電回数との比率と２：１とすることによっても同様
の効果を得ることができる。The same effect can be obtained by setting the ratio of the number of 0-degree pulse discharges to the number of 180-degree discharges to 2: 1.
【００８５】〔実施例６〕本実施例３〜５においては、
異なる位相差の成膜を連続して行うことによって、平坦
な膜厚分布が実際に得られた。そこで、本実施例におい
ては、この位相差を変化させる手法をさらに改良した例
について説明する。[Sixth Embodiment] In the third to fifth embodiments,
A flat film thickness distribution was actually obtained by continuously forming films with different retardations. Therefore, in the present embodiment, an example in which the method for changing the phase difference is further improved will be described.
【００８６】実施例１に示したように、パルス放電を行
うことによって、反応性気体の流れる方向における膜厚
分布を改善することができる。このパルス放電というの
は、例えば、１０ｍｓｅｃ放電し、１０ｍｓｅｃ放電を
休止し、また１０ｍｓｅｃ放電し、といったサイクルを
繰り返す放電方法である。As shown in the first embodiment, pulse discharge can improve the film thickness distribution in the direction in which the reactive gas flows. The pulsed discharge is a discharge method in which, for example, a cycle of 10 msec discharge, 10 msec discharge pause, and 10 msec discharge is repeated.
【００８７】一方、実施例３〜５においては、特定の位
相差で５分間成膜し、つぎに別の特定の位相差で５分間
成膜することによって、電極間方向における膜質を著し
く改善した例を示した。本実施例は、パルス放電の仕方
を改良することによって、実施例３〜５に示すのと同様
な効果を得る構成に関する。On the other hand, in Examples 3 to 5, the film quality in the inter-electrode direction was remarkably improved by forming the film with a specific phase difference for 5 minutes and then forming the film with another specific phase difference for 5 minutes. An example was given. The present embodiment relates to a configuration in which the same effects as those of the third to fifth embodiments are obtained by improving the method of pulse discharge.
【００８８】図１４（Ａ），（Ｂ）に本実施例の放電形
態を示す。図１４（Ａ），（Ｂ）に示すのは、パルス周
波数が１００Ｈｚ、duty比が５０％の場合、即ち放電時
間と休止時間とが同じであるが、放電形態が違う場合で
ある。14A and 14B show the discharge mode of this embodiment. FIGS. 14A and 14B show the case where the pulse frequency is 100 Hz and the duty ratio is 50%, that is, the discharge time and the rest time are the same, but the discharge forms are different.
【００８９】即ち、図１４（Ａ）に示すのは、１０ｍｓ
ｅｃの放電と１０ｍｓｅｃの休止とを交互に繰り返す場
合において、０度の位相差の放電と、１８０度の位相差
の放電とを繰り返して行う例である。また、図１４
（Ｂ）に示すのは、１０ｍｓｅｃの放電と１０ｍｓｅｃ
の休止とを交互に繰り返す場合において、０度の位相差
の放電と１８０度の位相差の放電とを２回づつ交互に繰
り返す場合の例である。That is, FIG. 14A shows 10 ms.
This is an example in which the discharge of ec and the pause of 10 msec are alternately repeated, and the discharge of the phase difference of 0 degree and the discharge of the phase difference of 180 degree are repeatedly performed. In addition, FIG.
(B) shows 10 msec discharge and 10 msec
This is an example of a case in which the pause of 1 is alternately repeated, and the discharge having the phase difference of 0 degree and the discharge having the phase difference of 180 degrees are alternately repeated twice.
【００９０】いずれの場合にしても、０度の位相差の放
電と１８０度の位相差の放電とを同じ時間行う場合と同
様な効果を得ることができる。In any case, it is possible to obtain the same effect as in the case where the discharge with the phase difference of 0 degree and the discharge with the phase difference of 180 degree are performed for the same time.
【００９１】図１４に示すのは、パルス周波数が１００
Ｈｚ、duty比が50％の場合の例である。しかし、他の値
のパルス周波数やduty比を選ぶこともできる。例えば、
パルス周波数が１０Ｈｚ、duty比を１０％とした場合
は、放電時間が７０ｍｓｅｃ、放電休止時間が３０ｍｓ
ｅｃとなる。FIG. 14 shows that the pulse frequency is 100
This is an example when the Hz and duty ratio is 50%. However, other values of pulse frequency and duty ratio can be chosen. For example,
When the pulse frequency is 10 Hz and the duty ratio is 10%, the discharge time is 70 msec and the discharge pause time is 30 ms.
It becomes ec.
【００９２】また、図１３に示すように、それぞれの位
相差での成膜時間を異ならせなければならない場合は、
それぞれの位相差における放電回数の割合を異ならせれ
ばよい。例えば、図１３に示す場合は、位相差０度で１
０分間成膜を行い、つぎに位相差１８０度で５分間成膜
を行うことによって、図１のｘ方向における膜厚分布を
改善される例であるが、このような場合は、図１５に示
すように、放電回数を（０度の位相差の場合）：（１８
０度の位相差の場合）＝２：１となるように制御すれば
よい。Further, as shown in FIG. 13, when the film forming time for each phase difference must be different,
The ratio of the number of discharges in each phase difference may be different. For example, in the case shown in FIG.
This is an example in which the film thickness distribution in the x direction in FIG. 1 is improved by performing film formation for 0 minutes and then for 5 minutes with a phase difference of 180 degrees. In such a case, FIG. As shown, the number of discharges (when the phase difference is 0 degree): (18
The phase difference may be 0 °) = 2: 1.
【００９３】また、（０度の位相差での放電時間）：
（１８０度の位相差での放電時間）＝２：１となるよう
にしてもよい。例えば、０度の位相差で１０秒放電し、
１８０度の位相差で５秒放電する、そしてこのサイクル
を繰り返す、といった放電形態を採用してもよい。Also, (discharge time at a phase difference of 0 degree):
(Discharge time at a phase difference of 180 degrees) = 2: 1. For example, discharge for 10 seconds with a phase difference of 0 degree,
It is also possible to adopt a discharge form in which discharge is performed for 5 seconds with a phase difference of 180 degrees, and this cycle is repeated.
【００９４】〔実施例７〕本実施例は、一対の電極に加
えられる高周波電力の周波数を異ならせることで、自動
的に位相差を変化させる構成に関する。[Embodiment 7] This embodiment relates to a configuration in which the phase difference is automatically changed by changing the frequency of the high frequency power applied to the pair of electrodes.
【００９５】ここで、珪素膜を成膜するとして、一対の
電極に印加される高周波電力の位相差を０度として５分
間成膜をし、さらに１８０度として５分間成膜をし、さ
らに位相差が９０度で５分間成膜をし、２７０度（−９
０度）で５分間成膜した場合を考える。Here, as the silicon film is formed, the phase difference of the high frequency power applied to the pair of electrodes is 0 degree for 5 minutes, and 180 degrees for 5 minutes. Film formation was carried out for 5 minutes at a phase difference of 90 degrees, and 270 degrees (-9
Consider the case where a film is formed at 0 degree for 5 minutes.
【００９６】当然成膜された珪素膜は電極間方向に均一
性の良いものとなる。従って、０度と１８０度、１０度
と１９０度、２０度と２００度、３０度と２１０度・・
・・・・・・３５０度（−１０度）と８０度、といった
組み合わせで成膜を行っても電極間方向の均一性は改善
されることになる。Naturally, the formed silicon film has good uniformity in the direction between the electrodes. Therefore, 0 and 180 degrees, 10 and 190 degrees, 20 and 200 degrees, 30 and 210 degrees ...
........ Even if the film formation is performed with a combination of 350 degrees (-10 degrees) and 80 degrees, the uniformity in the direction between the electrodes is improved.
【００９７】そこで、図１に示すような気相反応装置に
おいて、一対の電極間に少しだけ異なる周波数の高周波
電力を加えた場合を考える。このような場合、２つの周
波数の違いが僅か（２０％以下）であることが重要であ
る。なぜならば、周波数が異なりすぎると、その位相差
を議論することができないからである。Therefore, let us consider a case where high-frequency power having a slightly different frequency is applied between the pair of electrodes in the gas-phase reaction device as shown in FIG. In such a case, it is important that the difference between the two frequencies is small (20% or less). This is because if the frequencies are too different, the phase difference cannot be discussed.
【００９８】まず、反応開始時（高周波電力印加開始
時）において、２つの高周波電力の位相はそろっている
ものとする。時間が経過していくと、２つの高周波電力
はその位相が徐々にずれていき、その位相差は０度〜９
０度〜１８０度〜２７０度〜０度といったサイクルを繰
り返すことになる。First, it is assumed that the two high frequency powers are in phase at the start of the reaction (at the start of high frequency power application). As time passes, the phases of the two high-frequency powers gradually shift, and the phase difference between them is 0 degrees to 9 degrees.
The cycle of 0 ° to 180 ° to 270 ° to 0 ° is repeated.
【００９９】この一つのサイクルの中で、０度と１８０
度、９０度と２７０度（−９０度）、といった位相差の
違いが１８０度である組み合わせを考えることができ
る。この組み合わせについて考察すると、この組み合わ
せのそれぞれにおいて、当該電極間方向における膜厚分
布の均一化が図れることが理解される。従って、上記一
つのサイクルの間で膜厚分布の均一化を図ることができ
る。そして、このサイクルが繰り返されることによっ
て、電極間方向に均一な膜厚分布を有する薄膜を形成す
ることができる。ただし、上記のような成膜ができるの
は、図１１や図１２で示されるような、１８０度異なる
位相差で同じ時間成膜を行うことによって、電極間方向
における膜厚分布を均一にできる場合である。In this one cycle, 0 degree and 180 degrees
A combination in which the phase difference is 180 degrees, such as 90 degrees and 270 degrees (-90 degrees), can be considered. Considering this combination, it is understood that the film thickness distribution in the inter-electrode direction can be made uniform in each of the combinations. Therefore, the film thickness distribution can be made uniform during the one cycle. Then, by repeating this cycle, a thin film having a uniform film thickness distribution in the direction between the electrodes can be formed. However, the film formation as described above is possible because the film thickness distribution in the inter-electrode direction can be made uniform by performing the film formation with the phase difference different by 180 degrees for the same time as shown in FIGS. This is the case.
【０１００】具体的には、図１に示す気相反応装置にお
いて、一方の電極に１３．５６ＭＨｚの高周波電力を加
え、他方の電極に１３．５５ＭＨｚの高周波電力を加え
れば上記作用効果を得ることがでる。即ち、２つに周波
数の違いによって、一対の電極間に加えられる高周波電
力の位相差が０度〜３６０度まで除々に変化してき、こ
の１サイクルにおいて、電極間方向における均一な膜厚
分布を実現でき、さらにこのサイクルを繰り返すことに
よって、上記作用効果実現できる。Specifically, in the gas-phase reaction apparatus shown in FIG. 1, if the high-frequency power of 13.56 MHz is applied to one electrode and the high-frequency power of 13.55 MHz is applied to the other electrode, the above-mentioned effects can be obtained. Get out. That is, the phase difference of the high-frequency power applied between the pair of electrodes gradually changes from 0 degree to 360 degrees due to the difference in frequency, and in this one cycle, a uniform film thickness distribution in the direction between the electrodes is realized. By repeating this cycle, it is possible to realize the above-mentioned effects.
【０１０１】本実施例においては、２つの高周波電力の
位相を制御する必要はない。また、実際には上記のサイ
クルが多数回繰り返されるから、放電開始時に位相差０
から出発する必要もない。また、上記構成にパルス放電
を組み合わせることは、反応性気体の流れる方向におけ
る膜厚分布を改善するのに効果がある。In this embodiment, it is not necessary to control the phases of the two high frequency powers. In addition, since the above cycle is actually repeated many times, the phase difference becomes 0 when the discharge starts.
You don't even have to start from. In addition, combining pulse discharge with the above configuration is effective in improving the film thickness distribution in the direction in which the reactive gas flows.
【０１０２】〔実施例８〕本実施例は、電極間方向（電
界方向ともいう）と反応性気体が流れる方向を同一とし
た場合の例である。本実施例の構成を図１６に示す。図
１６に示されるように、一対の電極１４と１５の間に基
板２３が平行に配置された基板ホルダー２５が配置され
ている。この基板ホルダー２５は、図２及び図３に示す
のとその基本的な構成は同じである。即ち、一対の電極
１４、１５と複数の基板の関係は、図１〜３の場合と同
様である。ただ異なるのは、基板ホルダー２５の上側と
下側には、反応性気体が通るようにスリットが設けられ
ていることである。[Embodiment 8] This embodiment is an example in which the direction between electrodes (also referred to as the electric field direction) and the direction in which the reactive gas flows are the same. The structure of this embodiment is shown in FIG. As shown in FIG. 16, a substrate holder 25 in which a substrate 23 is arranged in parallel is arranged between a pair of electrodes 14 and 15. The substrate holder 25 has the same basic structure as that shown in FIGS. That is, the relationship between the pair of electrodes 14 and 15 and the plurality of substrates is the same as in the case of FIGS. The only difference is that the upper and lower sides of the substrate holder 25 are provided with slits through which the reactive gas passes.
【０１０３】放電は、一対の電極１４と１５との間で行
われる。一対の電極１４と１５のそれぞれには、１３．
５６ＭＨｚの高周波電源２０と２１が接続されている。
また図示はしないが、電源系は図６に示すのと同様な構
成を有しており、パルス放電、さらには電極１４と１５
とに位相差をもたせた放電を行うことができる。勿論、
一対の電極１４と１５に加えられる高周波電力の周波数
を異ならせることもできる。The discharge is performed between the pair of electrodes 14 and 15. For each of the pair of electrodes 14 and 15, 13.
56 MHz high frequency power supplies 20 and 21 are connected.
Although not shown, the power supply system has a structure similar to that shown in FIG.
It is possible to perform discharge with a phase difference between and. Of course,
The frequency of the high frequency power applied to the pair of electrodes 14 and 15 may be different.
【０１０４】図１６に示す構成においては、電極１４と
１５がメッシュ構造になっている。反応性気体はガス供
給系１２から供給され、メッシュ電極１４を通して反応
空間（ここには基板ホルダー２５が設けられている）に
到達し、プラズマ気相反応が行われる。そして不要とな
った反応性気体は真空ポンプ２２が設けられた排気系１
３より排気される。なお、反応空間とは、一対の電極１
４と１５との間の放電が行われる空間のことである。In the structure shown in FIG. 16, the electrodes 14 and 15 have a mesh structure. The reactive gas is supplied from the gas supply system 12, reaches the reaction space (here, the substrate holder 25 is provided) through the mesh electrode 14, and the plasma gas phase reaction is performed. The reactive gas that is no longer needed is an exhaust system 1 provided with a vacuum pump 22.
Exhausted from 3. The reaction space is a pair of electrodes 1.
It is a space in which a discharge between 4 and 15 takes place.
【０１０５】図１６に示す構成を採用した場合には、電
極間方向、即ち電界の方向と反応性気体が流れる方向と
が同一の方向となる。従って、 (1) 反応性気体の流れる方向における膜厚分布の均一化
を得られる。 (2) 電極間方向における膜厚分布の均一化を得られる。
といった効果を相乗して得ることができる。When the structure shown in FIG. 16 is adopted, the direction between the electrodes, that is, the direction of the electric field and the direction in which the reactive gas flows are the same. Therefore, (1) it is possible to obtain a uniform film thickness distribution in the direction in which the reactive gas flows. (2) A uniform film thickness distribution in the direction between the electrodes can be obtained.
These effects can be synergistically obtained.
【０１０６】[0106]
【効果】一対の電極間に基板面を垂直に配置した気相成
膜装置において、 (1) パルス放電を行うことによって、反応性気体の流れ
る方向における膜厚分布を改善することができる。 (2) 位相差放電を行うことによって、電極間方向におけ
る膜厚分布を改善することができる。[Effect] In a vapor phase film forming apparatus in which a substrate surface is vertically arranged between a pair of electrodes, (1) pulse discharge is performed to improve the film thickness distribution in the direction in which the reactive gas flows. (2) By performing the phase difference discharge, the film thickness distribution in the inter-electrode direction can be improved.
【図１】 実施例の構成を示す。FIG. 1 shows the configuration of an embodiment.
【図２】 実施例の構成を示す。FIG. 2 shows a configuration of an example.
【図３】 実施例の構成を示す。FIG. 3 shows a configuration of an example.
【図４】 膜厚分布を示す。FIG. 4 shows a film thickness distribution.
【図５】 膜厚分布を示す。FIG. 5 shows a film thickness distribution.
【図６】 実施例の放電系を示す。FIG. 6 shows a discharge system of an example.
【図７】 パルス放電の状態を示す。FIG. 7 shows a state of pulse discharge.
【図８】 反応空間における反応性気体の残量を示
す。FIG. 8 shows the remaining amount of reactive gas in the reaction space.
【図９】 スッテプカバレージの状態を示す。FIG. 9 shows a state of step coverage.
【図１０】 膜厚分布を示す。FIG. 10 shows a film thickness distribution.
【図１１】 膜厚分布を示す。FIG. 11 shows a film thickness distribution.
【図１２】 膜厚分布を示す。FIG. 12 shows a film thickness distribution.
【図１３】 膜厚分布を示す。FIG. 13 shows a film thickness distribution.
【図１４】 パルス放電の状態を示す。FIG. 14 shows a state of pulse discharge.
【図１５】 パルス放電の状態を示す。FIG. 15 shows a state of pulse discharge.
【図１６】 実施例の構成を示す。FIG. 16 shows a configuration of an example.
１１・・・・真空容器 １２・・・・ガス導入系 １３・・・・排気系 １４・・・・電極 １５・・・・電極 １７・・・・整合器 １８・・・・整合器 １９・・・・位相制御器 ２０・・・・高周波電源 ２１・・・・高周波電源 ２２・・・・真空ポンプ ２３・・・・基板 ２４・・・・基板 ２５・・・・基板ホルダー ２７・・・・スリット 11 ... Vacuum container 12 ... Gas introduction system 13 ... Exhaust system 14 ... Electrode 15 ... Electrode 17 ... Matching device 18 ... Matching device 19 ...・ ・ ・ Phase controller 20 ・ ・ ・ High frequency power source 21 ・ ・ ・ High frequency power source 22 ・ ・ ・ ・ Vacuum pump 23 ・ ・ ・ ・ Substrate 24 ・ ・ ・ ・ ・ ・ Substrate 25 ・ ・ ・ ・ ・ ・ Substrate holder 27 ・ ・ ・·slit
───────────────────────────────────────────────────── フロントページの続き (72)発明者 川野 篤 神奈川県厚木市長谷398番地 株式会社半 導体エネルギー研究所内 (72)発明者 柳 雄二 新潟県長岡市東高見２丁目２番31号 トッ キ株式会社長岡工場内 (72)発明者 神保 敏浩 新潟県長岡市東高見２丁目２番31号 トッ キ株式会社長岡工場内 ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Atsushi Kawano 398 Hase, Atsugi City, Kanagawa Prefecture Semiconductor Conductor Research Institute Co., Ltd. (72) Inventor Yuji Yanagi 2-32 Higashitakami, Nagaoka City, Niigata Prefecture Tokki Co., Ltd. Nagaoka Factory (72) Inventor Toshihiro Jimbo 2-32 Higashitakami, Nagaoka City, Niigata Prefecture Tokki Co., Ltd. Nagaoka Factory
Claims (9)
する手段と、 前記一対の電極に位相差がＸ度、及び（Ｘ±１８０）度
の高周波電力を加える手段と、 を有する気相反応装置。1. A pair of electrodes, a means for arranging at least one substrate between the electrodes perpendicularly to the electrode surface, and a high frequency with a phase difference of X degrees and (X ± 180) degrees between the pair of electrodes. A gas phase reaction device comprising: a means for applying electric power.
する手段と、 前記一対の電極間において間欠的に放電を生じさせる手
段と、 を有する気相反応装置。2. A gas phase comprising a pair of electrodes, means for arranging at least one substrate between the electrodes perpendicularly to an electrode surface, and means for intermittently generating a discharge between the pair of electrodes. Reactor.
する手段と、 前記一対の電極に位相差がＸ度、及び（Ｘ±１８０）度
の高周波電力を加える手段と、 前記一対の電極においてパルス放電を生じさせる手段
と、 を有する気相反応装置。3. A pair of electrodes, a means for arranging at least one substrate between the electrodes perpendicularly to the electrode surface, and a high frequency having a phase difference of X degrees and (X ± 180) degrees between the pair of electrodes. A gas phase reaction apparatus comprising: a unit for applying electric power; and a unit for generating pulsed discharge in the pair of electrodes.
させる方法であって、 電磁エネルギーを間欠的に供給することによって、 反応性気体の移動方向における気相反応を均一化するこ
とを特徴とする気相反応方法。4. A method for causing a gas phase reaction by electromagnetic energy, characterized by homogenizing a gas phase reaction in a moving direction of a reactive gas by intermittently supplying electromagnetic energy. Phase reaction method.
相反応を生じさせる方法であって、 それぞれの電極にＸ度の位相差で高周波電力を供給する
動作と、 それぞれの電極に（Ｘ＋１８０）度の位相差で高周波電
力を供給する動作と、 を有することを特徴とする気相反応方法。5. A method of causing a gas phase reaction by causing a discharge between a pair of electrodes, the operation of supplying high frequency power with a phase difference of X degrees to each electrode, and (X + 180) to each electrode. And a step of supplying high-frequency power with a phase difference of 10 degrees, and a gas phase reaction method comprising:
ことを特徴とする気相反応方法。6. The gas phase reaction method according to claim 5, wherein the discharge is performed intermittently.
を生じさせる方法であって、 一方の電極に供給する高周波電力と他方の電極に供給す
る高周波電力との位相差が、時間が経過するに従って徐
々に変化するようにしたことを特徴とする気相反応方
法。7. A method of causing a gas phase reaction by causing a discharge between a pair of electrodes, wherein the phase difference between the high frequency power supplied to one electrode and the high frequency power supplied to the other electrode is A gas-phase reaction method characterized in that it gradually changes as time passes.
を生じさせる方法であって、 一方の電極に供給する高周波の周波数と、他方の電極に
供給する高周波の周波数とが異なっていることを特徴と
する気相反応方法。8. A method for causing a gas phase reaction by causing a discharge between a pair of electrodes, wherein a high frequency frequency supplied to one electrode and a high frequency frequency supplied to the other electrode are different. A gas phase reaction method characterized by the above.
と、 を有し、 前記高周波電力の一方の周波数と他方の周波数とは、異
なっていることを特徴とする気相反応装置。9. A pair of electrodes, and means for supplying high frequency power to each of the pair of electrodes, wherein one frequency and the other frequency of the high frequency power are different. Gas phase reactor.
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| JP2001107244A (en) * | 1999-10-06 | 2001-04-17 | Kanegafuchi Chem Ind Co Ltd | Method and equipment for cleaning semiconductor film deposition system |
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