JPH0766856B2 - Thin film EL device - Google Patents
Thin film EL deviceInfo
- Publication number
- JPH0766856B2 JPH0766856B2 JP61013472A JP1347286A JPH0766856B2 JP H0766856 B2 JPH0766856 B2 JP H0766856B2 JP 61013472 A JP61013472 A JP 61013472A JP 1347286 A JP1347286 A JP 1347286A JP H0766856 B2 JPH0766856 B2 JP H0766856B2
- Authority
- JP
- Japan
- Prior art keywords
- dielectric layer
- thin film
- layer
- transparent electrode
- dielectric
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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- Electroluminescent Light Sources (AREA)
Description
【発明の詳細な説明】 〔産業上の利用分野〕 本発明は、薄膜EL素子に係り、特に輝度の向上のための
構造に関する。TECHNICAL FIELD The present invention relates to a thin film EL element, and more particularly to a structure for improving brightness.
輝度の面で問題が多く照明用光源としての開発を断念せ
ざるを得なかった、硫化亜鉛（ZnS）系蛍光体粉末を用
いた分散型EL素子に代わって、薄膜蛍光体層を用いた薄
膜型EL素子が高輝度を得られることから近年注目されて
きている。A thin film using a thin-film phosphor layer instead of the dispersion type EL device using zinc sulfide (ZnS) -based phosphor powder, which had many problems in terms of brightness and had to give up development as a light source for illumination. Type EL devices have been receiving attention in recent years because they can obtain high brightness.
薄膜EL素子は、発光層が透明な薄膜で構成されていて粒
状性がないため、外部から入射する光および発光層内部
で発光した光が散乱されてハレーションやにじみを生じ
ることがなく、鮮明でコントラストが高いことから、車
両への搭載用、コンピュータ端末等の表示装置あるいは
照明用として脚光を浴びている。The thin-film EL device has a light-emitting layer made of a transparent thin film and has no graininess.Therefore, light incident from the outside and light emitted inside the light-emitting layer are not scattered to cause halation or bleeding, and are clear Due to its high contrast, it has been spotlighted for use in vehicles, display devices such as computer terminals, and for lighting.
従来薄膜EL素子の基本構造は、第３図に示す如く透明性
の基板１上に酸化錫（SnO2）層等からなる透明電極２と
第１の誘電体層３と、ZnS:Mn薄膜からなる発光層４と、
第２の誘電体層５と、アルミニウム（Al）層等からなる
背面電極６とが順次積層せしめられた２重誘電体構造を
なしている。As shown in FIG. 3, the basic structure of a conventional thin film EL element is composed of a transparent substrate 1, a transparent electrode 2 made of a tin oxide (SnO 2 ) layer, a first dielectric layer 3, and a ZnS: Mn thin film. And a light emitting layer 4
A second dielectric layer 5 and a back electrode 6 made of an aluminum (Al) layer or the like are sequentially laminated to form a double dielectric structure.
そして、発光の過程は、以下に示す如くである。前記透
明電極と前記背面電極との間に電圧を印加すると、発光
層内に誘起された電界によって界面準位にトラップされ
ていた電子が引き出されて加速された充分なエネルギー
を得、この電子がMn（発光中心）の軌道電子に衝突しこ
れを励起する。そしてこの励起された発光中心が基底状
態に戻る際に発光を行なう。The light emitting process is as shown below. When a voltage is applied between the transparent electrode and the back electrode, the electrons trapped in the interface state are extracted by the electric field induced in the light emitting layer and accelerated enough energy is obtained, and this electron is It collides with orbital electrons of Mn (emission center) and excites them. Light is emitted when the excited luminescence center returns to the ground state.
かかる構造の薄膜EL素子においては、発光層から発生さ
れる光を効率良く外部に取り出すべく、第１の誘電体層
の屈折率と膜厚を制御する方法（特公昭58−55635）
等、さまざまな工夫がなされている。In the thin film EL element having such a structure, a method of controlling the refractive index and the film thickness of the first dielectric layer in order to efficiently extract the light generated from the light emitting layer to the outside (Japanese Patent Publication Sho 58-55635).
Etc., various ideas have been made.
ところで、このような薄膜EL素子の等価回路は第１の誘
電体層３、発光層４、第２の誘電体層５によって構成さ
れる３つのコンデンサの直列接続体として表わすことが
できる。従って、第１の誘電体層および第２の誘電体層
の比誘電率εr1,εr2が、発光層の比誘電体率εｌに比
べて充分に大きい（εr1,εr2≫εｌ）とき、これらの
電気容量Cr1,Cr2,ClはCr1,Cr2≫Clとなるため、この素
子への外部からの印加電圧のほとんどが発光層にかかる
ことになり、低い駆動電圧で高輝度を得ることができ
る。By the way, an equivalent circuit of such a thin film EL element can be represented as a series connection body of three capacitors constituted by the first dielectric layer 3, the light emitting layer 4, and the second dielectric layer 5. Therefore, when the relative dielectric constants εr1 and εr2 of the first dielectric layer and the second dielectric layer are sufficiently larger than the relative dielectric constant εl of the light emitting layer (εr1, εr2 >> εl), these Since the capacitances Cr1, Cr2, Cl satisfy Cr1, Cr2 >> Cl, most of the voltage applied to the device from the outside is applied to the light emitting layer, and high luminance can be obtained with a low driving voltage.
駆動電圧の低下のためには、第１の誘電体層として誘電
率の大きなものを用いるのが好ましいが、誘電率の大き
なものを用いると、透明電極との界面での反射率が大き
くなり、発光層からの光を効率良く取り出すことができ
ないという矛盾があり、低い駆動電圧で高輝度を得るこ
とは困難であった。In order to reduce the driving voltage, it is preferable to use a material having a large dielectric constant as the first dielectric layer, but if a material having a large dielectric constant is used, the reflectance at the interface with the transparent electrode becomes large, Since there is a contradiction that light from the light emitting layer cannot be efficiently extracted, it is difficult to obtain high brightness with a low driving voltage.
本発明は、前記実情に鑑みてなされたもので、発光層か
らの光を効率良く取り出し、高輝度を得ることのできる
薄膜EL素子を提供することを目的とする。The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a thin film EL element capable of efficiently extracting light from a light emitting layer and obtaining high brightness.
そこで本発明では、基板上に透明電極と、第１の誘電体
層と、発光層と、第２の誘電体層と、背面電極とを順次
積層せしめた薄膜EL素子において、透明電極と第１の誘
電体層との間に選択的に、両者の中間の屈折率を有する
第３の誘電体層を介在せしめるようにしている。Therefore, in the present invention, in the thin film EL element in which the transparent electrode, the first dielectric layer, the light emitting layer, the second dielectric layer, and the back electrode are sequentially laminated on the substrate, the transparent electrode and the first electrode are formed. The third dielectric layer having a refractive index intermediate between the two is selectively interposed between the first dielectric layer and the second dielectric layer.
〔作 用〕 かかる構成によれば、第３の誘電体層を介在せしめるこ
とにより第１の誘電体層のもつ誘電率を低下せしめるこ
となく第１の誘電体層と透明電極との界面における屈折
率の差を緩和し、反射を低減することにより発光層から
の光を効率良くとり出すことができる。[Operation] According to such a configuration, refraction at the interface between the first dielectric layer and the transparent electrode can be performed without reducing the dielectric constant of the first dielectric layer by interposing the third dielectric layer. Light from the light emitting layer can be efficiently extracted by reducing the difference in the rates and reducing the reflection.
例えば、いま透明電極の屈折率をn0＝２、第１の誘電体
層を屈折率n2＝４とし、これらの間にこれらの中間の屈
折率n1＝３を有する第３の誘電体層を介在させたとき、
フレネル（Fresnel）の法則より、透明電極と第３の誘
電体層との間の反射率R1は、 第３の誘電体層と第１の誘電体層との間の反射率R2は となって全体の反射率は６％となり、透過率は94％とな
る。For example, a transparent electrode has a refractive index n 0 = 2, a first dielectric layer has a refractive index n 2 = 4, and a third dielectric having an intermediate refractive index n 1 = 3 therebetween. When interposing layers,
According to Fresnel's law, the reflectance R 1 between the transparent electrode and the third dielectric layer is The reflectance R 2 between the third dielectric layer and the first dielectric layer is Thus, the total reflectance is 6% and the transmittance is 94%.
これに対し、第３の誘電体層を介在させなかったとき、
透明電極と第１の誘電体層との反射率は、 となり、透過率は89％となる。On the other hand, when the third dielectric layer is not interposed,
The reflectance between the transparent electrode and the first dielectric layer is And the transmittance is 89%.
これら透過率の比較からも第３の誘電体層を介在せしめ
ることにより、透過率が大幅に改善されていることがわ
かる。From the comparison of these transmittances, it can be seen that the transmittance is significantly improved by interposing the third dielectric layer.
すなわち、本発明の第１では、誘電体層にかかる電圧を
できるだけ小さくし発光層に効率的に電圧がかかるよう
にするとともに、透明電極側における屈折率の差による
反射を制御し、有効に光を取り出すことにより、低い駆
動電圧で高輝度の薄膜EL素子を提供する。That is, in the first aspect of the present invention, the voltage applied to the dielectric layer is made as small as possible so that the light-emitting layer is efficiently applied with voltage, and the reflection due to the difference in the refractive index on the transparent electrode side is controlled to effectively emit light. By taking out, a thin film EL element with high luminance and low drive voltage is provided.
第１の誘電体層および第２の誘電体層は、駆動電圧の低
減の面からは誘電率の大きいものを用いるのが望ましい
が、一般に誘電率の大きい材料は屈折率が大きく透明電
極との間の屈折率の差が大きくなるという問題がある。
一方第２の誘電体層は、光を透明電極側に効率よく取り
出すためには金属電極との間で反射が大きい方がよくし
かもできるだけ高誘電率の材料を用いる必要がある。そ
こで金属電極側は第２の誘電体層のみにして高誘電率の
材料を用い、透明電極側にのみ選択的に、第１の誘電体
層と透明電極との中間の屈折率を有する第３の誘電体層
を用いる。For the first dielectric layer and the second dielectric layer, it is desirable to use a material having a large dielectric constant from the viewpoint of reducing the driving voltage, but in general, a material having a large dielectric constant has a large refractive index and a transparent electrode. There is a problem that the difference in refractive index between the two becomes large.
On the other hand, in order to efficiently extract light to the transparent electrode side, the second dielectric layer preferably has a large reflection with the metal electrode, and it is necessary to use a material having a high dielectric constant as much as possible. Therefore, the metal electrode side is made of a material having a high dielectric constant only as the second dielectric layer, and only the transparent electrode side has a third refractive index which is intermediate between the first dielectric layer and the transparent electrode. Dielectric layer is used.
また本発明の第２では、第１の誘電体層と前記透明電極
との間に、屈折率がこれらの中間の値の範囲内で連続的
に変化するように構成された多層構造の第３の誘電体層
を配設したことを特徴とする 〔実施例〕 以下、本発明の実施例について図面を参照しつつ詳細に
説明する。Further, in a second aspect of the present invention, a third multilayer structure configured such that the refractive index continuously changes between the first dielectric layer and the transparent electrode within a range between these intermediate values. [Examples] Hereinafter, examples of the present invention will be described in detail with reference to the drawings.
第１図は、本発明の薄膜EL素子を示す図である。FIG. 1 is a diagram showing a thin film EL device of the present invention.
この薄膜EL素子は厚さ1mmの透光性のガラス基板11上に
膜厚0.3μｍの酸化錫（SnO2）層等からなる透明電極1
2、膜厚0.1μｍの酸化イットリウム（Y2O3）層からなる
第３の誘電体層13、膜厚0.4μｍの五酸化タンタル（Ta2
O5）層からなる第１の誘電体層14、膜厚0.5μｍの硫化
亜鉛（ZnS）：マンガンMn層からなる発光層15、膜厚0.5
μｍの五酸化タンタル（Ta2O5）層からなる第２の誘電
体層16、膜厚0.5μｍのアルミニウム薄膜からなる背面
電極17とが順次積層せしめられて構成されている。This thin-film EL device has a transparent electrode 1 made of a tin oxide (SnO 2 ) layer having a thickness of 0.3 μm on a translucent glass substrate 11 having a thickness of 1 mm.
2. Third dielectric layer 13 made of yttrium oxide (Y 2 O 3 ) layer having a thickness of 0.1 μm, tantalum pentoxide (Ta 2
O 5 ) first dielectric layer 14, 0.5 μm thick zinc sulfide (ZnS): manganese Mn luminescent layer 15, 0.5 thick
A second dielectric layer 16 made of a tantalum pentoxide (Ta 2 O 5 ) layer having a thickness of μm and a back electrode 17 made of an aluminum thin film having a thickness of 0.5 μm are sequentially laminated.
この薄膜EL素子は、透明電極と背面電極との間に交番電
界を加えることによって駆動されるが、その電圧−輝度
特性曲線ａを従来例の第３の誘電体層を有しない構造の
薄膜EL素子の電圧−輝度特性曲線ｂと共に第２図に示
す。これらの比較からも、本発明の薄膜EL素子は、従来
例の薄膜EL素子に比べて、大幅に輝度が向上しているこ
とがわかる。（ここでたて軸は輝度、横軸は印加電圧
（Ｖ）を示す。） なお、実施例では第３の誘電体層を一層構造としたが、
多層構造とし、徐々に屈折率を変化するような構造とし
てもよい。This thin film EL element is driven by applying an alternating electric field between the transparent electrode and the back electrode, but its voltage-luminance characteristic curve a is obtained by the thin film EL of the structure not having the third dielectric layer of the conventional example. It is shown in FIG. 2 together with the voltage-luminance characteristic curve b of the device. From these comparisons as well, it can be seen that the thin film EL element of the present invention has significantly improved luminance as compared with the conventional thin film EL element. (Here, the vertical axis represents the luminance and the horizontal axis represents the applied voltage (V).) In the embodiment, the third dielectric layer has a single layer structure.
A multi-layer structure may be used in which the refractive index gradually changes.
また、各層の構成材料としては、実施例に限定されるこ
となく、適宜変更可能である。加えて、この薄膜EL素子
は、表示装置以外に照明用として、光記録媒体への信号
の書き込み、読み出し、消去用の光源としても使用可能
である。In addition, the constituent material of each layer is not limited to the embodiment, and can be appropriately changed. In addition, the thin film EL element can be used as a light source for writing, reading, and erasing a signal on an optical recording medium, as well as a display device for illumination.
以上説明したきたように、本発明によれば、透明電極と
第１の誘電体層との間に、これらの中間の屈折率を有す
る第３の誘電体層を介在せしめるようにしているため、
発光層からの光を効率良く、外部に取り出すことがで
き、高輝度を薄膜EL素子を提供することが可能となる。As described above, according to the present invention, the third dielectric layer having a refractive index intermediate between these is interposed between the transparent electrode and the first dielectric layer.
Light from the light emitting layer can be efficiently extracted to the outside, and a thin film EL element with high brightness can be provided.
第１図は、本発明実施例の薄膜EL素子を示す図、第２図
は、同薄膜EL素子と従来の薄膜EL素子との輝度−電圧特
性の比較図、第３図は、従来例の薄膜EL素子を示す図で
ある。 １……基板、２……透明電極、３……第１の誘電体層、
４……発光層、５……第２の誘電体層、６……背面電
極、11……ガラス基板、12……透明電極、13……第３の
誘電体層、14……第１の誘電体層、15……発光層、16…
…第２の誘電体層、17……背面電極。FIG. 1 is a diagram showing a thin film EL element of an embodiment of the present invention, FIG. 2 is a comparison diagram of luminance-voltage characteristics of the thin film EL element and a conventional thin film EL element, and FIG. It is a figure which shows a thin film EL element. 1 ... Substrate, 2 ... Transparent electrode, 3 ... First dielectric layer,
4 ... Emitting layer, 5 ... Second dielectric layer, 6 ... Back electrode, 11 ... Glass substrate, 12 ... Transparent electrode, 13 ... Third dielectric layer, 14 ... First Dielectric layer, 15 ... Emitting layer, 16 ...
… Second dielectric layer, 17 …… Back electrode.
Claims (2)
第１および第２の誘電体層を介して発光層を挟んだ薄膜
EL素子において、 前記第１の誘電体層と前記透明電極との間にのみ選択的
に、これらの中間の屈折率を有する第３の誘電体層を配
設するとともに、 前記第２の誘電体層と金属電極との間の屈折率の差はそ
のまま維持し、金属電極側での反射を抑制することな
く、前記第１の誘電体層と透明電極との間に介在せしめ
られた第３の誘電体層の存在により、界面での屈折率の
差を選択的に小さくし、透明電極側での反射を抑制する
ように構成されていることを特徴とする薄膜EL素子。1. A thin film in which a light emitting layer is sandwiched between a transparent electrode and a metal electrode via first and second dielectric layers, respectively.
In the EL element, a third dielectric layer having a refractive index intermediate between these is selectively disposed only between the first dielectric layer and the transparent electrode, and the second dielectric layer is provided. The difference in refractive index between the layer and the metal electrode is maintained as it is, and the third dielectric layer interposed between the first dielectric layer and the transparent electrode is maintained without suppressing reflection on the metal electrode side. A thin film EL device characterized in that the presence of the dielectric layer selectively reduces the difference in refractive index at the interface and suppresses reflection on the transparent electrode side.
第１および第２の誘電体層を介して発光層を挟んだ薄膜
EL素子において、 前記第１の誘電体層と前記透明電極との間に、屈折率が
これらの中間の値の範囲内で連続的に変化するように構
成された多層構造の第３の誘電体層を配設したことを特
徴とする薄膜EL素子。2. A thin film in which a light emitting layer is sandwiched between a transparent electrode and a metal electrode via first and second dielectric layers, respectively.
In the EL element, a third dielectric having a multi-layer structure configured such that the refractive index continuously changes between the first dielectric layer and the transparent electrode within a range between these intermediate values. A thin film EL device characterized by arranging layers.
Priority Applications (11)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61013472A JPH0766856B2 (en) | 1986-01-24 | 1986-01-24 | Thin film EL device |
| US06/947,782 US4794302A (en) | 1986-01-08 | 1986-12-30 | Thin film el device and method of manufacturing the same |
| DE3751206T DE3751206T2 (en) | 1986-01-08 | 1987-01-07 | Thin film electroluminescent device and method of manufacturing the same. |
| EP87100094A EP0229627B1 (en) | 1986-01-08 | 1987-01-07 | Thin film electroluminescent device and method of manufacturing the same |
| DE8787100094T DE3777664D1 (en) | 1986-01-08 | 1987-01-07 | THICK LAYER ELECTROLUMINESCENT DEVICE AND METHOD FOR PRODUCING THE SAME. |
| EP90125792A EP0421494B1 (en) | 1986-01-08 | 1987-01-07 | A thin film electroluminescent (EL) device and method of manufacturing the same |
| KR1019870000081A KR0132785B1 (en) | 1986-01-08 | 1987-01-08 | Thin film el device and method of manufacturing the same |
| FI870066A FI83013C (en) | 1986-01-08 | 1987-01-08 | Thin film type electroluminescence device and method of counting its front |
| US07/269,930 US5006365A (en) | 1986-01-08 | 1988-10-28 | Method of manufacturing a thin film EL device by multisource deposition method |
| US07/648,111 US5133988A (en) | 1986-01-08 | 1991-01-31 | Method of manufacturing thin film el device |
| KR1019950034085A KR970000428B1 (en) | 1986-01-08 | 1995-10-02 | Thin film el device and method for manufacturing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61013472A JPH0766856B2 (en) | 1986-01-24 | 1986-01-24 | Thin film EL device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62172691A JPS62172691A (en) | 1987-07-29 |
| JPH0766856B2 true JPH0766856B2 (en) | 1995-07-19 |
Family
ID=11834073
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61013472A Expired - Fee Related JPH0766856B2 (en) | 1986-01-08 | 1986-01-24 | Thin film EL device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0766856B2 (en) |
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|---|---|---|---|---|
| US6396208B1 (en) | 1998-01-27 | 2002-05-28 | Nec Corporation | Organic electroluminescent device and its manufacturing process |
| JP2991183B2 (en) | 1998-03-27 | 1999-12-20 | 日本電気株式会社 | Organic electroluminescence device |
| JP3503579B2 (en) | 1999-12-08 | 2004-03-08 | 日本電気株式会社 | Organic EL device and manufacturing method thereof |
| JP2002352956A (en) * | 2001-03-23 | 2002-12-06 | Mitsubishi Chemicals Corp | Thin-film light emitting substance and manufacturing method therefor |
| CN100425103C (en) * | 2001-03-29 | 2008-10-08 | 富士胶片株式会社 | Electrolumine scence device |
| JP4302914B2 (en) | 2001-07-30 | 2009-07-29 | 三星モバイルディスプレイ株式會社 | LIGHT EMITTING ELEMENT AND DISPLAY DEVICE |
| JP2003115377A (en) | 2001-10-03 | 2003-04-18 | Nec Corp | Light emitting element, its manufacturing method, and display equipment using this |
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Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58216391A (en) * | 1982-06-10 | 1983-12-16 | 株式会社リコー | Thin film el element |
-
1986
- 1986-01-24 JP JP61013472A patent/JPH0766856B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62172691A (en) | 1987-07-29 |
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