JPH0734463B2 - Photoelectric conversion device - Google Patents
Photoelectric conversion deviceInfo
- Publication number
- JPH0734463B2 JPH0734463B2 JP61131099A JP13109986A JPH0734463B2 JP H0734463 B2 JPH0734463 B2 JP H0734463B2 JP 61131099 A JP61131099 A JP 61131099A JP 13109986 A JP13109986 A JP 13109986A JP H0734463 B2 JPH0734463 B2 JP H0734463B2
- Authority
- JP
- Japan
- Prior art keywords
- photoelectric conversion
- layer
- electrode
- conversion device
- semiconductor layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000006243 chemical reaction Methods 0.000 title claims description 60
- 239000004065 semiconductor Substances 0.000 claims description 30
- 239000000758 substrate Substances 0.000 claims description 8
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 5
- 238000010586 diagram Methods 0.000 description 8
- 238000004519 manufacturing process Methods 0.000 description 5
- 239000011521 glass Substances 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Light Receiving Elements (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
- Facsimile Heads (AREA)
Description
【発明の詳細な説明】 ［産業上の利用分野］ 本発明は光電変換装置に係り、特に光電変換部と、この
光電変換部に対応して設けられた電荷蓄積部とを有する
光電変換装置に関する。The present invention relates to a photoelectric conversion device, and more particularly to a photoelectric conversion device having a photoelectric conversion part and a charge storage part provided corresponding to the photoelectric conversion part. .
［従来技術］ 従来、イメージリーダ，ファクシミリ等の画像の読み取
りに使用される光電変換装置としては、以下に示す構成
のものが多く用いられている。[Prior Art] Conventionally, as a photoelectric conversion device used for reading an image in an image reader, a facsimile, or the like, a photoelectric conversion device having the following configuration is often used.
第９図は従来の光電変換装置の一構成例を示す縦断面図
である。FIG. 9 is a vertical cross-sectional view showing one structural example of a conventional photoelectric conversion device.
同図に示すように、本例の光電変換装置は光電変換部１
と、この光電変換部１に対応して設けられた電荷蓄積部
２と、この電荷蓄積部２にその一端が接続されたスイッ
チ素子部３と、このスイッチ素子部３の他端が接続され
た信号処理回路７とから構成される。As shown in the figure, the photoelectric conversion device of this example includes a photoelectric conversion unit 1
A charge accumulating section 2 provided corresponding to the photoelectric conversion section 1, a switch element section 3 having one end connected to the charge accumulating section 2, and the other end of the switch element section 3 being connected. It is composed of a signal processing circuit 7.
上記光電変換装置を製造する場合、ガラス基板16上に電
荷蓄積部２の共通電極４及びスイッチ素子部３のゲート
電極11を形成し、その上に絶縁層12（ここでは、水素化
アモルファス窒化シリコンを）を形成し、さらにその上
に光電変換材料からなる半導体層13（ここでは、アモル
ファスシリコンｉ層）及びオーミックコンタクト層14
（ここでは、アモルファスシリコンn+層）を形成し、こ
の半導体層13とオーミックコンタクト層14とを、光電変
換部１の一部とスイッチ素子部３の一部を除いてエッチ
ングにより除去し、その上に光電変換部１の共通電極8,
電荷蓄積部２の個別電極5,スイッチ素子部３のドレイン
電極９とソース電極10を形成する。In the case of manufacturing the above photoelectric conversion device, the common electrode 4 of the charge storage part 2 and the gate electrode 11 of the switch element part 3 are formed on the glass substrate 16, and the insulating layer 12 (here, hydrogenated amorphous silicon nitride) is formed thereon. And a semiconductor layer 13 (here, an amorphous silicon i layer) and an ohmic contact layer 14 made of a photoelectric conversion material.
(Here, an amorphous silicon n + layer) is formed, and the semiconductor layer 13 and the ohmic contact layer 14 are removed by etching except a part of the photoelectric conversion section 1 and a part of the switch element section 3, and The common electrode 8 of the photoelectric conversion unit 1,
The individual electrode 5 of the charge storage part 2, the drain electrode 9 and the source electrode 10 of the switch element part 3 are formed.
［発明が解決しようとする問題点］ 上記光電変換装置において、半導体層13とオーミックコ
ンタクト層14とをエッチングする際に絶縁層12と完全に
分離してエッチングすることは困難であり、絶縁層12が
エッチングに伴って変形されたり、ピンホール等が発生
する結果となり、特に電荷蓄積部２においては、蓄積電
荷のリーク等が発生し、光電変換特性がばらついて設計
通りとならず、歩留りが低下する問題点があった。[Problems to be Solved by the Invention] In the above photoelectric conversion device, it is difficult to completely separate the insulating layer 12 from the insulating layer 12 when the semiconductor layer 13 and the ohmic contact layer 14 are etched. Results in deformation due to etching, pinholes, and the like. In particular, in the charge storage unit 2, leaks of stored charges occur, and the photoelectric conversion characteristics fluctuate, making it impossible to achieve the design and reducing the yield. There was a problem to do.
［問題点を解決するための手段］ 上記の問題点は、基板上に、光電変換部と、この光電変
換部に対応して設けられた電荷蓄積部とを有する光電変
換装置において、 前記光電変換部は少なくとも一対の電極、絶縁層、該絶
縁層上に設けられた半導体層及び前記電極と前記半導体
層との間に設けられたオーミックコンタクト層を、 前記電極蓄積部は前記基板上に、電極、絶縁層、該絶縁
層上に設けられた半導体層、前記電極と前記半導体層及
び前記絶縁層を挟んで設けられた対向電極、前記半導体
層と前記対向電極との間に設けられたオーミックコンタ
クト層を、 夫々有し、 前記光電変換部の前記絶縁層、前記半導体層、及び前記
オーミックコンタクト層の夫々は、前記電荷蓄積部の前
記絶縁層、前記半導体層、及び前記オーミックコンタク
ト層の夫々と同時に形成された層を利用して形成されて
いることを特徴とする本発明の光電変換装置によって解
決される。[Means for Solving the Problems] The above-mentioned problems are in the photoelectric conversion device having a photoelectric conversion unit and a charge storage unit provided corresponding to the photoelectric conversion unit on the substrate, The portion includes at least a pair of electrodes, an insulating layer, a semiconductor layer provided on the insulating layer, and an ohmic contact layer provided between the electrode and the semiconductor layer, the electrode accumulating portion on the substrate, the electrode. An insulating layer, a semiconductor layer provided on the insulating layer, a counter electrode provided so as to sandwich the electrode and the semiconductor layer and the insulating layer, and an ohmic contact provided between the semiconductor layer and the counter electrode. Each of the insulating layer of the photoelectric conversion unit, the semiconductor layer, and the ohmic contact layer, the insulating layer of the charge storage unit, the semiconductor layer, and the ohmic contact layer. It is solved by the photoelectric conversion device of the present invention which is characterized in that it is formed by using the respective simultaneously formed layer of the layer.
［作用］ 本発明は、少なくとも電荷蓄積部の絶縁層上に半導体と
オーミックコンタクト層とを設けたことにより、製造工
程を簡略化し、製造工程上における絶縁層の劣化を防い
で、蓄積容量のバラツキを抑え、光電変換特性を安定化
させるものである。即ち、半導体層とオーミックコンタ
クト層を電荷蓄積部に有することで、優れた絶縁性を保
つことができ、電荷蓄積容量のバラツキを抑えることが
できる。そして、半導体層がありオーミックコンタクト
層がなかった場合には電子、ホールの移動が制限され使
用条件等によって電荷蓄積容量が変わり、不要な電荷が
蓄積される場合がありますが、オーミックコンタクト層
を設けることによって、電荷蓄積部に蓄積される不要な
電荷の蓄積をなくすことが可能になり、電荷蓄積部に蓄
積される信号電荷量に余計な電荷がのることを防ぐこと
が可能になることで光電変換特性をより一層安定させる
ことができる。また本発明は、前記半導体層と前記オー
ミックコンタクト層を光電変換部及び電荷蓄積部に同一
工程で設けることを可能とし、工程数の増加を生ずるこ
ともなく、高く歩留まりで極めて優れた特性の光電変換
装置を提供するものである。[Operation] According to the present invention, the semiconductor and the ohmic contact layer are provided at least on the insulating layer of the charge storage portion, so that the manufacturing process is simplified, the insulating layer is prevented from being deteriorated in the manufacturing process, and the storage capacity varies. To stabilize the photoelectric conversion characteristics. That is, by having the semiconductor layer and the ohmic contact layer in the charge storage portion, excellent insulating properties can be maintained and variations in the charge storage capacitance can be suppressed. If there is a semiconductor layer and there is no ohmic contact layer, the movement of electrons and holes is restricted and the charge storage capacity may change depending on the usage conditions, etc., and unnecessary charges may accumulate, but an ohmic contact layer is provided. By doing so, it is possible to eliminate the accumulation of unnecessary charges accumulated in the charge accumulation unit, and it is possible to prevent unnecessary charges from accumulating in the signal charge amount accumulated in the charge accumulation unit. The photoelectric conversion characteristics can be further stabilized. Further, the present invention makes it possible to provide the semiconductor layer and the ohmic contact layer in the photoelectric conversion part and the charge storage part in the same step, without increasing the number of steps, and with a high yield, a photoelectric conversion material having an extremely excellent characteristic. A conversion device is provided.
［実施例］ 以下、本発明の実施例について図面を用いて詳細に説明
する。なお、以下の説明において、第９図に示した光電
変換装置と同一部材については同一番号を付する。EXAMPLES Examples of the present invention will be described in detail below with reference to the drawings. In the following description, the same members as those in the photoelectric conversion device shown in FIG. 9 are designated by the same reference numerals.
第１図は本発明の光電変換装置の一実施例を示す概略図
である。FIG. 1 is a schematic diagram showing an embodiment of the photoelectric conversion device of the present invention.
第２図は第１図のＡ−Ａ′縦断面図である。FIG. 2 is a vertical sectional view taken along the line AA ′ of FIG.
第３図は第１図のＢ−Ｂ′の縦断面図である。FIG. 3 is a vertical sectional view taken along the line BB ′ in FIG.
第１図に示すように、本発明の光電変換装置は光電変換
部１と、この光電変換部１に対応して設けられた電荷蓄
積部２と、この電荷蓄積部２にその一端が接続されたス
イッチ素子部３と、このスイッチ素子部３の他端が接続
された信号処理回路７とから構成される。６は光電変換
部１に接続された電源である。光電変換部1,電荷蓄積部
2,スイッチ素子部３は、次のようにして形成される。As shown in FIG. 1, the photoelectric conversion device of the present invention has a photoelectric conversion unit 1, a charge storage unit 2 provided corresponding to the photoelectric conversion unit 1, and one end of which is connected to the charge storage unit 2. The switch element section 3 and the signal processing circuit 7 to which the other end of the switch element section 3 is connected. Reference numeral 6 is a power source connected to the photoelectric conversion unit 1. Photoelectric conversion unit 1, charge storage unit
2, the switch element portion 3 is formed as follows.
第２図と第３図に示すように、ガラス基板16上に電荷蓄
積部２の共通電極４及びスイッチ素子部３のゲート電極
11を形成し、その上に絶縁層12を形成し、さらにその上
に光電変換材料からなる半導体層13及びオーミックコン
タクト層14を形成し、その上に光電変換部１の共通電極
8,電荷蓄積部２の個別電極5,スイッチ素子13のドレイン
電極９とソース電極10を形成する。個別電極５と共通電
極４との間の半導体層13及びオーミックコンタクト層14
は誘導体としての役割を果し、電荷蓄積部２においてエ
ッチングされずに残されており、第３図に示すように、
個別電極５の形成時にエッチングされて分割されるのみ
である。すなわち、個別電極５と共通電極４との間の絶
縁層12はエッチング時にピンホール，形状変形等を生ず
ることはない。As shown in FIGS. 2 and 3, the common electrode 4 of the charge storage part 2 and the gate electrode of the switch element part 3 are formed on the glass substrate 16.
11 is formed, an insulating layer 12 is formed thereon, a semiconductor layer 13 made of a photoelectric conversion material and an ohmic contact layer 14 are further formed thereon, and a common electrode of the photoelectric conversion part 1 is formed thereon.
8, the individual electrode 5 of the charge storage unit 2, the drain electrode 9 and the source electrode 10 of the switch element 13 are formed. The semiconductor layer 13 and the ohmic contact layer 14 between the individual electrode 5 and the common electrode 4
Plays a role as a derivative, and is left unetched in the charge storage portion 2. As shown in FIG.
It is only etched and divided when the individual electrode 5 is formed. That is, the insulating layer 12 between the individual electrode 5 and the common electrode 4 does not cause pinholes, shape deformation or the like during etching.
また、本実施例は光電変換部１の開孔部近傍の共通電極
8,個別電極５の段差がなく、断線等の不良を生ずること
が少ない長所も有している。In addition, in this embodiment, the common electrode in the vicinity of the opening of the photoelectric conversion unit 1 is used.
8. There is also an advantage that there is no step of the individual electrode 5 and there are few defects such as disconnection.
上記光電変換装置の動作は次のようにして行われる。The operation of the photoelectric conversion device is performed as follows.
第７図は電荷蓄積部２の動作を示す説明図であり、第８
図はその蓄積容量を示す特性図である。FIG. 7 is an explanatory diagram showing the operation of the charge storage section 2,
The figure is a characteristic diagram showing the storage capacity.
まず、光電変換部１に光が照射され、共通電極８に電圧
が印加さると、半導体層13の開孔部の導電率が上り、電
荷が電荷蓄積部２の個別電極５に蓄積される。この時、
第７図に示すように個別電極５と共通電極４との間に共
通電極４側を高電位とする電源15を取り付け、一定値以
上の電圧をかけると、第８図に示すように、蓄積容量Ｃ
を大きくすることができ、蓄積電荷量を増すことができ
る。蓄積された電荷はスイッチ素子部３の電界効果トラ
ンジスタのON状態の時に信号処理回路７に転送され、こ
の信号処理回路７によってシリアル信号に変換されて出
力される。First, when the photoelectric conversion unit 1 is irradiated with light and a voltage is applied to the common electrode 8, the conductivity of the opening of the semiconductor layer 13 rises and electric charges are accumulated in the individual electrode 5 of the charge accumulating unit 2. At this time,
As shown in FIG. 7, when a power source 15 having a high potential on the common electrode 4 side is attached between the individual electrode 5 and the common electrode 4 and a voltage of a certain value or more is applied, as shown in FIG. Capacity C
Can be increased, and the amount of accumulated charge can be increased. The accumulated charges are transferred to the signal processing circuit 7 when the field effect transistor of the switch element unit 3 is in the ON state, converted into a serial signal by the signal processing circuit 7, and output.
次に本発明の光電変換装置の他の実施例について説明す
る。Next, another embodiment of the photoelectric conversion device of the present invention will be described.
第４図は本発明の光電変換装置の他の実施例を示す概略
図である。FIG. 4 is a schematic diagram showing another embodiment of the photoelectric conversion device of the present invention.
第５図は第４図のＡ−Ａ′縦断面図である。FIG. 5 is a vertical sectional view taken along the line AA ′ of FIG.
第６図は第４図のＢ−Ｂ′縦断面図である。FIG. 6 is a vertical sectional view taken along the line BB ′ of FIG.
本実施例においては、電荷蓄積部２の共通電極４と個別
電極５とは逆に配置されており、まずガラス基板16上に
電荷蓄積部２の個別電極５とスイッチ素子部３のゲート
電極11とを形成し、その上に絶縁層12、半導体層13,オ
ーミックコンタクト層14を形成する。共通電極形成部分
を除いて個別電極５上の絶縁層12,半導体層13,オーミッ
クコンタクト層14を除去し、さらに光電変換部１の共通
電極８と接続電極17,電荷蓄積部２の共通電極4,スイッ
チ素子部３のドレイン電極９とソース電極10を形成す
る。本実施例においても、個別電極５と共通電極４との
間の絶縁層12はエッチングされずに残されており、第１
図〜第３図に示した前実施例と同様な効果が得られる。In this embodiment, the common electrode 4 and the individual electrode 5 of the charge storage unit 2 are arranged in reverse, and the individual electrode 5 of the charge storage unit 2 and the gate electrode 11 of the switch element unit 3 are first arranged on the glass substrate 16. And the insulating layer 12, the semiconductor layer 13, and the ohmic contact layer 14 are formed thereon. The insulating layer 12, the semiconductor layer 13, and the ohmic contact layer 14 on the individual electrode 5 are removed except for the common electrode formation portion, and the common electrode 8 and the connection electrode 17 of the photoelectric conversion unit 1 and the common electrode 4 of the charge storage unit 2 are further removed. Then, the drain electrode 9 and the source electrode 10 of the switch element part 3 are formed. Also in this embodiment, the insulating layer 12 between the individual electrode 5 and the common electrode 4 is left without being etched.
The same effects as those of the previous embodiment shown in FIGS.
［発明の効果］ 以上詳細に説明したように、本発明の光電変換装置によ
れば、少なくとも電荷蓄積部の絶縁層上に半導体層とオ
ーミックコンタクト層とを設けたことにより、製造工程
を簡略化し、製造工程上における絶縁層の劣化を防い
で、蓄積容量のバラツキを抑え、光電変換特性を安定化
させることができる。また本発明によれば、前記半導体
層と前記オーミックコンタクト層は光電変換部及び電荷
蓄積部に同一工程で設けることができるため、工程数の
増加を生ずることもなく、高い歩留まりで極めて優れた
特性の光電変換装置を提供することができる。[Effects of the Invention] As described in detail above, according to the photoelectric conversion device of the present invention, the semiconductor layer and the ohmic contact layer are provided at least on the insulating layer of the charge storage portion, thereby simplifying the manufacturing process. It is possible to prevent deterioration of the insulating layer in the manufacturing process, suppress variations in storage capacitance, and stabilize photoelectric conversion characteristics. Further, according to the present invention, since the semiconductor layer and the ohmic contact layer can be provided in the photoelectric conversion part and the charge storage part in the same step, an increase in the number of steps does not occur and an extremely excellent characteristic with a high yield is obtained. The photoelectric conversion device can be provided.
第１図は本発明の光電変換装置の一実施例を示す概略図
である。 第２図は第１図のＡ−Ａ′縦断面図である。 第３図は第１図のＢ−Ｂ′縦断面図である。 第４図は本発明の光電変換装置の他の実施例を示す概略
図である。 第５図は第４図のＡ−Ａ′縦断面図である。 第６図は第４図のＢ−Ｂ′縦断面図である。 第７図は電荷蓄積部２の動作を示す説明図である。 第８図は電荷蓄積部２の蓄積容量を示す特性図である。 第９図は従来の光電変換装置の一構成例を示す縦断面図
である １……光電変換部 ２……電荷蓄積部 ３……スイッチ素子部 4,8……共通電極 ５……個別電極 6,15……電源 ７……信号処理回路 12……絶縁層 13……半導体層 14……オーミックコンタクト層 16……ガラス基板 17……接続電極FIG. 1 is a schematic diagram showing an embodiment of the photoelectric conversion device of the present invention. FIG. 2 is a vertical sectional view taken along the line AA ′ of FIG. FIG. 3 is a vertical sectional view taken along the line BB ′ of FIG. FIG. 4 is a schematic diagram showing another embodiment of the photoelectric conversion device of the present invention. FIG. 5 is a vertical sectional view taken along the line AA ′ of FIG. FIG. 6 is a vertical sectional view taken along the line BB ′ of FIG. FIG. 7 is an explanatory diagram showing the operation of the charge storage unit 2. FIG. 8 is a characteristic diagram showing the storage capacity of the charge storage section 2. FIG. 9 is a vertical cross-sectional view showing an example of the structure of a conventional photoelectric conversion device. 6,15 …… Power supply 7 …… Signal processing circuit 12 …… Insulating layer 13 …… Semiconductor layer 14 …… Ohmic contact layer 16 …… Glass substrate 17 …… Connecting electrode
───────────────────────────────────────────────────── フロントページの続き (72)発明者 畑中 勝則 東京都大田区下丸子３丁目30番２号 キヤ ノン株式会社内 (56)参考文献 特開 昭56−138968（ＪＰ，Ａ) 特開 昭60−91666（ＪＰ，Ａ) 特開 昭61−56383（ＪＰ，Ａ) 特開 昭57−30882（ＪＰ，Ａ) ─────────────────────────────────────────────────── ─── Continuation of the front page (72) Inventor Katsunori Hatanaka 3-30-2 Shimomaruko, Ota-ku, Tokyo Canon Inc. (56) Reference JP-A-56-138968 (JP, A) JP-A-60 -91666 (JP, A) JP 61-56383 (JP, A) JP 57-30882 (JP, A)
Claims (4)
に対応して設けられた電荷蓄積部とを有する光電変換装
置において、 前記光電変換部は少なくとも一対の電極、絶縁層、該絶
縁層上に設けられた半導体層及び前記電極と前記半導体
層との間に設けられたオーミックコンタクト層を、 前記電荷蓄積部は前記基板上に、電極、絶縁層、該絶縁
層上に設けられた半導体層、前記電極と前記半導体層及
び前記絶縁層を挟んで設けられた対向電極、前記半導体
層と前記対向電極との間に設けられたオーミックコンタ
クト層を、 夫々有し、 前記光電変換部の前記絶縁層、前記半導体層、及び前記
オーミックコンタクト層の夫々は、前記電荷蓄積部の前
記絶縁層、前記半導体層、及び前記オーミックコンタク
ト層の夫々と同時に形成された層を利用して形成されて
いることを特徴とする光電変換装置。1. A photoelectric conversion device having a photoelectric conversion portion and a charge storage portion provided corresponding to the photoelectric conversion portion on a substrate, wherein the photoelectric conversion portion includes at least a pair of electrodes, an insulating layer, and A semiconductor layer provided on an insulating layer and an ohmic contact layer provided between the electrode and the semiconductor layer, the charge storage portion is provided on the substrate, the electrode, the insulating layer, and the insulating layer. A semiconductor layer, a counter electrode provided so as to sandwich the electrode and the semiconductor layer and the insulating layer, and an ohmic contact layer provided between the semiconductor layer and the counter electrode. For the insulating layer, the semiconductor layer, and the ohmic contact layer, the layers formed at the same time as the insulating layer, the semiconductor layer, and the ohmic contact layer of the charge storage part are used. A photoelectric conversion device characterized by being formed as follows.
なり、これらの光電変換素子に対応して設けられた電荷
蓄積部の絶縁層側の対向電極を共通電極とした特許請求
の範囲第１項記載の光電変換装置。2. The photoelectric conversion part comprises a plurality of photoelectric conversion elements, and the counter electrode on the insulating layer side of the charge storage part provided corresponding to these photoelectric conversion elements is a common electrode. The photoelectric conversion device according to item 1.
ある特許請求の範囲第１項に記載の光電変換装置。3. The photoelectric conversion device according to claim 1, wherein the semiconductor layer is an amorphous silicon layer.
スシリコンn+層である特許請求の範囲第１項に記載の光
電変換装置。4. The photoelectric conversion device according to claim 1, wherein the ohmic contact layer is an amorphous silicon n + layer.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61131099A JPH0734463B2 (en) | 1986-06-07 | 1986-06-07 | Photoelectric conversion device |
| EP87300566A EP0232083B1 (en) | 1986-01-24 | 1987-01-22 | Photoelectric conversion device |
| DE3751242T DE3751242T2 (en) | 1986-01-24 | 1987-01-22 | Photoelectric converter. |
| US07/412,586 US4931661A (en) | 1986-01-24 | 1989-09-25 | Photoelectric conversion device having a common semiconductor layer for a portion of the photoelectric conversion element and a portion of the transfer transistor section |
| US07/907,287 US5306648A (en) | 1986-01-24 | 1992-07-01 | Method of making photoelectric conversion device |
| US07/912,651 US5338690A (en) | 1986-01-24 | 1992-07-09 | Photoelectronic conversion device |
| US08/128,108 US5627088A (en) | 1986-01-24 | 1993-09-29 | Method of making a device having a TFT and a capacitor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP61131099A JPH0734463B2 (en) | 1986-06-07 | 1986-06-07 | Photoelectric conversion device |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4210650A Division JP2617265B2 (en) | 1992-07-16 | 1992-07-16 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS62290170A JPS62290170A (en) | 1987-12-17 |
| JPH0734463B2 true JPH0734463B2 (en) | 1995-04-12 |
Family
ID=15049953
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP61131099A Expired - Lifetime JPH0734463B2 (en) | 1986-01-24 | 1986-06-07 | Photoelectric conversion device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0734463B2 (en) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS56138968A (en) * | 1980-03-31 | 1981-10-29 | Canon Inc | Photoelectric converter |
| JPS5730882A (en) * | 1980-07-31 | 1982-02-19 | Suwa Seikosha Kk | Active matrix substrate |
| JPH0624234B2 (en) * | 1983-10-25 | 1994-03-30 | 松下電器産業株式会社 | One-dimensional photoelectric conversion device |
| JP2566130B2 (en) * | 1984-08-28 | 1996-12-25 | セイコー電子工業株式会社 | Method for manufacturing substrate for active matrix display device |
-
1986
- 1986-06-07 JP JP61131099A patent/JPH0734463B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JPS62290170A (en) | 1987-12-17 |
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