JPH06252253A - Electrostatic chuck - Google Patents

Electrostatic chuck

Info

Publication number
JPH06252253A
JPH06252253A JP3807293A JP3807293A JPH06252253A JP H06252253 A JPH06252253 A JP H06252253A JP 3807293 A JP3807293 A JP 3807293A JP 3807293 A JP3807293 A JP 3807293A JP H06252253 A JPH06252253 A JP H06252253A
Authority
JP
Japan
Prior art keywords
sample
force
cooling plate
conductor
electrostatic chuck
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3807293A
Other languages
Japanese (ja)
Inventor
Nobuhiro Iwama
信浩 岩間
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Sumitomo Metal Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sumitomo Metal Industries Ltd filed Critical Sumitomo Metal Industries Ltd
Priority to JP3807293A priority Critical patent/JPH06252253A/en
Publication of JPH06252253A publication Critical patent/JPH06252253A/en
Pending legal-status Critical Current

Links

Landscapes

  • Jigs For Machine Tools (AREA)
  • Drying Of Semiconductors (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

PURPOSE:To prevent the generation of dropping, cracking, etc., of an object to be attracted, and enable a specimen to be released immediately after the attractive force is extinguished. CONSTITUTION:A specimen stand 1 wherein conductor 2 is covered with an insulating film 3 is arranged at the nearly central part on a cooling plate 12, and fixed to the cooling plate 12 by a specimen stand presser 11. A base member 5 is arranged in a space 22 formed in the cooling plate 12. Lift pins 4, 4,... disposed upright in the end portion of the base member 5 are inserted from the space 22 into holes 21, 21,... formed in the specimen stand 1. The base member 5 is retained by an upper side retaining rod 61, which is connected with a lower side retaining rod 62, via a spring 8. A retaining plate 25 formed at the lower end of the lower side retaining rod 62 is connected with the cooling plate 12 by using a bellows 24. The retaining plate 25 is connected with an elevating shaft 27 wherein a load cell 9 connected with a stepping motor 26 is arranged. The load cell 9 is connected with a control equipment 10 in which an amplifier 101, an operator 102 and a driver 103 are installed.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、例えば半導体製造装置
において、その表面上に成膜またはエッチング等の処理
を施される試料を静電吸着力により吸着,保持する静電
チャックに関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an electrostatic chuck for, for example, a semiconductor manufacturing apparatus, which attracts and holds a sample on the surface of which a treatment such as film formation or etching is performed by electrostatic attraction.

【0002】[0002]

【従来の技術】例えば、電子サイクロトロン共鳴(Ele
ctron Cyclotron Resonance)を利用して生成される
ECRプラズマにより、半導体基板上に所望の物質の成膜
を形成する CVD(Chemical Vapor Deposition )装
置、または半導体基板上に微細なパターンを形成するド
ライエッチング装置等の半導体製造装置は、プラズマ生
成室内に生成される ECRプラズマを、発散磁界の作用に
よりプラズマ生成室に連接した試料室に導き、試料室内
に配設した試料台上に保持された半導体基板上に照射し
て、該基板上に薄膜の形成またはエッチングを行うもの
である。そしてこれらの装置においては、半導体基板を
試料室内の試料台に吸着,保持するために、静電吸着作
用を利用する静電チャックが用いられている。
2. Description of the Related Art For example, electron cyclotron resonance (Ele
ctron Cyclotron Resonance)
A semiconductor manufacturing apparatus such as a CVD (Chemical Vapor Deposition) apparatus for forming a film of a desired substance on a semiconductor substrate by ECR plasma or a dry etching apparatus for forming a fine pattern on a semiconductor substrate is provided in a plasma generation chamber. The generated ECR plasma is guided to the sample chamber connected to the plasma generation chamber by the action of the divergent magnetic field, and it irradiates the semiconductor substrate held on the sample table arranged in the sample chamber, and the thin film on the substrate is irradiated. It is to be formed or etched. In these devices, an electrostatic chuck that utilizes an electrostatic adsorption action is used to adsorb and hold a semiconductor substrate on a sample table in a sample chamber.

【0003】この静電チャックとして、薄膜状の絶縁体
にて外側を被覆してある平板状の導電体を備える試料台
を試料室に配設し、試料台の表面に被吸着物である半導
体基板を載置させ、導電体に所定の直流電圧を印加し
て、導電体と半導体基板との間に静電吸着力を生じさ
せ、この静電吸着力により半導体基板を導電体上に吸
着,保持する構成とした静電チャックがある。
As this electrostatic chuck, a sample stage having a flat plate-shaped conductor whose outer surface is covered with a thin film insulator is arranged in a sample chamber, and a semiconductor which is an object to be adsorbed is provided on the surface of the sample stage. A substrate is placed, and a predetermined DC voltage is applied to the conductor to generate an electrostatic attraction force between the conductor and the semiconductor substrate. This electrostatic attraction force attracts the semiconductor substrate onto the conductor. There is an electrostatic chuck configured to hold.

【0004】このような静電チャックにおいては、吸着
状態にある被吸着物を取り外す場合、前記直流電圧の印
加を中断し、静電力を消滅させた後、被吸着物を離脱さ
せるという手順により行っている。図3は従来の静電チ
ャックを示す模式的断面図であり、図中12は冷却水を循
環する循環路14が配設された冷却板である。冷却板12内
にはその厚み方向の中央部に空間部22が形成されてお
り、空間部22には冷却板12の裏面に達するガイド穴がガ
イド23により形成されている。冷却板12上の略中央には
被吸着物である半導体基板等の試料Sを載置する試料台
1が配置されており、試料台1は冷却板12に配設した循
環路14に冷却水を循環して冷却されるようになされてい
る。試料台1は導電体2の表面に絶縁膜3を被覆して構
成されており、その立断面形状は凸状である。また試料
台1には試料Sを昇降するリフトピン4,4…を挿入す
るための穴21,21 …が貫通されており、前記冷却板12に
は試料台1の穴21,21 …に連通し、空間部22に達する穴
が形成されている。
In such an electrostatic chuck, when removing the attracted object in the attracted state, the application of the DC voltage is interrupted to eliminate the electrostatic force, and then the attracted object is detached. ing. FIG. 3 is a schematic cross-sectional view showing a conventional electrostatic chuck, in which 12 is a cooling plate provided with a circulation path 14 for circulating cooling water. A space 22 is formed in the center of the cooling plate 12 in the thickness direction thereof, and a guide hole 23 is formed in the space 22 to reach the back surface of the cooling plate 12 by a guide 23. A sample table 1 on which a sample S such as a semiconductor substrate, which is an object to be adsorbed, is placed is arranged at approximately the center of the cooling plate 12, and the sample table 1 is provided with a cooling water in a circulation path 14 provided in the cooling plate 12. Is circulated to be cooled. The sample table 1 is configured by covering the surface of the conductor 2 with the insulating film 3, and the vertical cross section thereof has a convex shape. Further, holes 21, 21, ... For inserting lift pins 4, 4, ... For moving up and down the sample S are penetrated through the sample table 1, and the cooling plate 12 is communicated with the holes 21, 21 ,. A hole reaching the space portion 22 is formed.

【0005】前記凸状の試料台1の周囲には、中央部に
径を異にする孔が上下に形成された試料台押さえ11が配
設されており、前記孔はその径がそれぞれ試料台1の上
段の直径及び下段の直径より若干大きくなるようなされ
ている。また試料台押さえ11の下側の孔の上に突出した
押さえ部11a は、試料台1の上面周縁の一段低くなった
受部1aと対向すべくなされている。そして試料台押さえ
11はビス等の固着具13にて前記冷却板12に固着されてお
り、固着具13は試料台1の受部1aとこれに対向する試料
台押さえ11の押さえ部11a とを介して試料台1を冷却板
12に密着させている。
Around the convex sample stage 1, a sample stage retainer 11 having holes of different diameters formed in the upper and lower portions is arranged in the center, and the holes have different diameters. It is designed to be slightly larger than the diameter of the upper stage and the diameter of the lower stage. Further, the pressing portion 11a protruding above the lower hole of the sample table holder 11 is made to face the receiving portion 1a which is lowered by one step in the peripheral edge of the upper surface of the sample table 1. And sample holder
11 is fixed to the cooling plate 12 by a fixing tool 13 such as a screw, and the fixing tool 13 is mounted on the sample table via the receiving section 1a of the sample table 1 and the pressing section 11a of the sample table holder 11 facing the receiving section 1a. 1 cooling plate
It sticks to 12.

【0006】一方前記冷却板12の空間部22には板状の基
部材5が配設されており、基部材5の縁部には試料台1
の穴21,21 …に挿入して試料Sを昇降するリフトピン
4,4…が立設されている。そして基部材5は、前記冷
却板12に設けたガイド23に挿入された支持棒6に支持さ
れている。前記支持棒6の下端には支持板25が固定され
ており、支持板25と冷却板12とは試料室(図示せず)内
の減圧状態を維持するための伸縮自在なベローズ24にて
封止されている。そして支持板25はリフトピン4,4…
を昇降するアクチュエータ36に接続されている。
On the other hand, a plate-shaped base member 5 is arranged in the space 22 of the cooling plate 12, and the sample table 1 is provided at the edge of the base member 5.
Of the lift pins 4, 4 for vertically moving the sample S by being inserted into the holes 21, 21 ,. The base member 5 is supported by a support rod 6 inserted into a guide 23 provided on the cooling plate 12. A support plate 25 is fixed to the lower end of the support rod 6, and the support plate 25 and the cooling plate 12 are sealed by an expandable bellows 24 for maintaining a depressurized state in a sample chamber (not shown). It has been stopped. And the support plate 25 has lift pins 4, 4 ...
Is connected to an actuator 36 that moves up and down.

【0007】このような装置にて試料Sを離脱するに
は、導電体2への直流電圧の印加を中断して試料Sと導
電体2との電荷が中和され、吸着力が消滅する所要時間
経過した後、アクチュエータ36を作動させて支持棒6を
上昇させ、リフトピン4,4…にて試料Sを試料台1か
ら離脱させていた。
In order to separate the sample S with such an apparatus, it is necessary to interrupt the application of the DC voltage to the conductor 2 to neutralize the charge between the sample S and the conductor 2 and to eliminate the adsorption force. After a lapse of time, the actuator 36 was operated to raise the support rod 6, and the sample S was detached from the sample table 1 by the lift pins 4, 4.

【0008】[0008]

【発明が解決しようとする課題】ところでこのような従
来の静電チャックにおいて、吸着力が消滅するに要する
時間は試料の特性,処理温度,印加電圧等の条件によっ
て一定ではなく、また吸着力が残存している状態でアク
チュエータを作動させて試料を試料台から離脱すると、
試料がリフトピンから落下し、或いは所定位置からずれ
て試料室からの搬出にミスを生じ、またリフトピンにて
試料を割損するといった虞があるため、前記所要時間に
は吸着力が消滅するに要する最も長い時間を基準とし、
これに安全率を乗じて設定する必要があり、単位時間当
たりの試料処理枚数を示すスループットを低下させ、更
に半導体製造装置の効率も低下する問題があった。本発
明はかかる事情に鑑みてなされたものであって、その目
的とするところは吸着力が消滅する前より試料が離脱す
る方向へ微弱な力を付与することにより、試料の落下及
び割損等を生じることなく、吸着力の消滅後直ちに試料
を離脱することができる静電チャックを提供するにあ
る。
By the way, in such a conventional electrostatic chuck, the time required for the attraction force to disappear is not constant depending on the characteristics of the sample, the processing temperature, the applied voltage, etc. When the actuator is operated while remaining and the sample is removed from the sample table,
Since the sample may fall from the lift pin or may be misaligned from the predetermined position to cause the sample to be unloaded from the sample chamber, and the lift pin may break the sample, the time required for the suction force to disappear is the most necessary. Based on long time,
It is necessary to set it by multiplying it by a safety factor, which lowers the throughput indicating the number of processed samples per unit time, and further lowers the efficiency of the semiconductor manufacturing apparatus. The present invention has been made in view of such circumstances, and its purpose is to apply a weak force in a direction in which a sample is detached before the adsorption force disappears, thereby dropping and breaking the sample. Another object of the present invention is to provide an electrostatic chuck capable of releasing a sample immediately after the attraction force disappears, without causing the phenomenon.

【0009】[0009]

【課題を解決するための手段】本発明に係る静電チャッ
クにあっては、絶縁膜を被覆した導電体と被吸着物との
間に印加した直流電圧にて吸着力を発生して前記被吸着
物を吸着すべく構成してあり、前記被吸着物を前記導電
体から離脱する離脱手段を備えた静電チャックにおい
て、弾性力を利用して前記被吸着物に前記導電体から離
脱する方向へ、前記吸着力より弱い力を付与する離脱力
付与手段と、前記被吸着物に付与されている力を検出す
る手段とを備え、前記吸着力が消滅後直ちに前記被吸着
物を前記導電体から離脱すべくなしてあることを特徴と
する。
In an electrostatic chuck according to the present invention, an attractive force is generated by a DC voltage applied between a conductor coated with an insulating film and an object to be attracted, and the object to be attracted is generated. In an electrostatic chuck that is configured to adsorb an adsorbate and has a detaching unit that detaches the adsorbate from the conductor, a direction in which the adsorbate detaches from the conductor by using elastic force. A detachment force applying means for applying a force weaker than the attraction force and a means for detecting a force applied to the object to be attracted, and the object to be attracted to the conductor immediately after the attraction force disappears. It is characterized in that it is made to leave from.

【0010】[0010]

【作用】本発明の静電チャックは、絶縁膜を被覆した導
電体と被吸着物との間に直流電圧を印加して発生した静
電吸着力により吸着した前記被吸着物を、前記直流電圧
の印加を止めた後導電体から離脱する場合、弾性力を利
用した離脱力付与手段によって被吸着物が前記導電体か
ら離脱する方向へ、吸着力より弱い力を、離脱手段を介
して被吸着物に付与するため、被吸着物の搬送ミス及び
割損を生じることなくこれが離脱する微弱な力を被吸着
物に付与することができ、かつ吸着力の消滅後直ちに被
吸着物を離脱することができる。更に被吸着物に付与さ
れている力を検出する手段を備えるため、前述した被吸
着物に付与する力を精密に検出し得、かつ被吸着物の離
脱を感知して離脱後引き続いて被吸着物を所定位置まで
搬送することができる。
In the electrostatic chuck of the present invention, the attracted object that is attracted by the electrostatic attraction force generated by applying the DC voltage between the conductor coated with the insulating film and the attracted object is converted into the DC voltage. In case of detaching from the conductor after stopping the application of a force, a force weaker than the attracting force is applied to the attractant through the detaching means in the direction in which the attractant is detached from the conductor by the detaching force applying means utilizing elastic force. Since it is applied to the object, it is possible to apply a weak force to the object to be adsorbed without causing conveyance error or breakage of the object to be adsorbed, and to release the object to be adsorbed immediately after the adsorption force disappears. You can Further, since the means for detecting the force applied to the object to be adsorbed is provided, the force applied to the object to be adsorbed can be accurately detected, and the separation of the object to be adsorbed is sensed, and the object to be adsorbed subsequently Items can be transported to a predetermined position.

【0011】[0011]

【実施例】以下本発明をその実施例を示す図面に基づい
て具体的に説明する。図1は本発明の静電チャックを示
す模式的断面図であり、図中12は冷却水を循環する循環
路14が配設された冷却板である。冷却板12内にはその厚
み方向の中央部に空間部22が形成されており、空間部22
には冷却板12の裏面に達するガイド穴がガイド23により
形成されている。冷却板12上の略中央には被吸着物であ
る半導体基板等の試料Sを載置する試料台1が配置され
ており、試料台1は冷却板12に配設した循環路14に冷却
水を循環して冷却されるようになされている。試料台1
は導電体2の表面に絶縁膜3を被覆して構成されてお
り、その立断面形状は凸状である。また試料台1には試
料Sを昇降するリフトピン4,4…を挿入するための穴
21,21 …が貫通されており、前記冷却板12には試料台1
の穴21,21 …に連通し、空間部22に達する穴が形成され
ている。
DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be specifically described below with reference to the drawings showing the embodiments thereof. FIG. 1 is a schematic sectional view showing an electrostatic chuck of the present invention. In the figure, reference numeral 12 is a cooling plate provided with a circulation passage 14 for circulating cooling water. A space 22 is formed in the cooling plate 12 at the center in the thickness direction.
A guide hole reaching the back surface of the cooling plate 12 is formed by the guide 23. A sample table 1 on which a sample S such as a semiconductor substrate, which is an object to be adsorbed, is placed is arranged at approximately the center of the cooling plate 12, and the sample table 1 is provided with a cooling water in a circulation path 14 provided in the cooling plate 12. Is circulated to be cooled. Sample table 1
Is formed by covering the surface of the conductor 2 with the insulating film 3, and the vertical cross-section thereof is convex. Further, holes for inserting the lift pins 4, 4 ...
21,21 ... are penetrated, and the sample table 1 is attached to the cooling plate 12.
Are formed so as to reach the space 22.

【0012】前記凸状の試料台1の周囲には、中央部に
径を異にする孔が上下に形成された試料台押さえ11が配
設されており、前記孔はその径がそれぞれ試料台1の上
段の直径及び下段の直径より若干大きくなるようなされ
ている。また試料台押さえ11の下側の孔の上に突出した
押さえ部11a は、試料台1の上面周縁の一段低くなった
受部1aと対向すべくなされている。そして試料台押さえ
11はビス等の固着具13にて前記冷却板12に固着されてお
り、固着具13は試料台1の受部1aとこれに対向する試料
台押さえ11の押さえ部11a とを介して試料台1を冷却板
12に密着させている。
Around the convex sample stage 1, a sample stage retainer 11 having holes of different diameters formed in the upper and lower portions is arranged in the center, and each of the holes has a diameter of the sample stage. It is designed to be slightly larger than the diameter of the upper stage and the diameter of the lower stage. Further, the pressing portion 11a protruding above the lower hole of the sample table holder 11 is made to face the receiving portion 1a which is lowered by one step in the peripheral edge of the upper surface of the sample table 1. And sample holder
11 is fixed to the cooling plate 12 by a fixing tool 13 such as a screw, and the fixing tool 13 is mounted on the sample table via the receiving section 1a of the sample table 1 and the pressing section 11a of the sample table holder 11 facing the receiving section 1a. 1 cooling plate
It sticks to 12.

【0013】一方前記冷却板12の空間部22には板状の基
部材5が配設されており、基部材5の縁部には試料台1
の穴21,21 …に挿入して試料Sを昇降するリフトピン
4,4…が立設されている。そして基部材5は、前記冷
却板12に設けたガイド23に挿入された上側支持棒61に支
持されており、上側支持棒61は、弾性力を利用して吸着
力より弱くまた試料を疵つけることがない微弱な力を試
料Sへ付与する離脱力付与手段であるバネ8を介して、
下側支持棒62に接続されている。
On the other hand, a plate-shaped base member 5 is arranged in the space 22 of the cooling plate 12, and the sample table 1 is provided at the edge of the base member 5.
Of the lift pins 4, 4 for vertically moving the sample S by being inserted into the holes 21, 21 ,. The base member 5 is supported by an upper support rod 61 inserted into a guide 23 provided on the cooling plate 12, and the upper support rod 61 uses an elastic force to weaken the adsorption force and scratch the sample. Via a spring 8 which is a detachment force imparting means for imparting a weak force to the sample S
It is connected to the lower support rod 62.

【0014】下側支持棒62の下端には支持板25が配設さ
れており、支持板25と冷却板12とは試料室(図示せず)
内の減圧状態を維持するための伸縮自在なベローズ24に
て封止されている。前記支持板25はステッピングモータ
26に連接した昇降軸27に接続されており、昇降軸27には
ステッピングモータ26による押上力を検出する検出器で
あるひずみゲージ式のロードセル9が配設されている。
A support plate 25 is arranged at the lower end of the lower support rod 62, and the support plate 25 and the cooling plate 12 are connected to a sample chamber (not shown).
It is sealed by an expandable bellows 24 for maintaining the reduced pressure inside. The support plate 25 is a stepping motor.
It is connected to an elevating shaft 27 connected to 26, and a strain gauge type load cell 9 which is a detector for detecting the pushing force by the stepping motor 26 is arranged on the elevating shaft 27.

【0015】一方ロードセル9の出力は制御装置10のア
ンプ101 に入力され、アンプ101 の増幅出力は演算器10
2 に入力される。演算器102 は入力された値と予め与え
られた所定値との比較結果または検出すべきひづみの有
無によって、ステッピングモータ26の制御信号をドライ
バ103 に出力するようになっており、ドライバ103 は演
算器102 からの入力に従って、ステッピングモータ26に
動力を与えるようになっている。
On the other hand, the output of the load cell 9 is input to the amplifier 101 of the control device 10, and the amplified output of the amplifier 101 is the arithmetic unit 10
Entered in 2. The calculator 102 outputs the control signal of the stepping motor 26 to the driver 103 according to the result of comparison between the input value and a predetermined value given or the presence or absence of a ridge to be detected. The stepping motor 26 is powered according to the input from the device 102.

【0016】図2は本発明装置による試料の離脱及びそ
の後の押上を説明する部分的模式図であり、A点はリフ
トピン4の下降位置、B点は試料Sが試料台1から完全
に離脱する位置、C点はリフトピン4の上限位置であ
る。なお図1と同じものには同じ符号を付してその説明
を省く。試料台1の導電体2への通電を停止した後、直
ちに制御装置10の演算器102 は、ドライバ103 をしてス
テッピングモータ26を駆動せしめてA点にあるリフトピ
ン4を所定位置まで上昇させる。この所定位置とは、吸
着力が消滅した場合リフトピン4がB点となるに要する
ステッピングモータ26の押上量に相当する位置である。
このとき試料Sは残存する吸着力にて試料台1に吸着さ
れているので、バネ8の弾性力によりリフトピン4を介
して上方向への力を受けるが、この力は前述した如く微
弱な力であるため、吸着力が消滅するまで試料Sを離脱
させず、またリフトピン4による試料Sへの疵も生じる
ことがなく、試料Sは上方向への力を受け続ける。
FIG. 2 is a partial schematic view for explaining the separation of the sample and the subsequent push-up by the apparatus of the present invention. Point A is the lowered position of the lift pin 4 and point B is the sample S completely separated from the sample table 1. The position and point C are the upper limit position of the lift pin 4. The same parts as those in FIG. 1 are designated by the same reference numerals and the description thereof will be omitted. Immediately after the power supply to the conductor 2 of the sample table 1 is stopped, the computing unit 102 of the control device 10 causes the driver 103 to drive the stepping motor 26 to raise the lift pin 4 at the point A to a predetermined position. This predetermined position is a position corresponding to the amount of lift of the stepping motor 26 required for the lift pin 4 to reach point B when the suction force disappears.
At this time, since the sample S is attracted to the sample table 1 by the residual attraction force, the elastic force of the spring 8 receives an upward force via the lift pin 4, but this force is a weak force as described above. Therefore, the sample S is not released until the adsorption force disappears, and the lift pin 4 does not cause a flaw on the sample S, and the sample S continues to receive the upward force.

【0017】一方残存する吸着力が消滅すると、同時的
に前述したバネ8の弾性力により試料Sは試料台1から
離脱されてB点まで移動する。これによってロードセル
9にて検出すべきひずみが検出されなくため、制御装置
10は試料Sが離脱したと判断し、ステッピングモータ26
を駆動して試料SをC点まで押上げる。
On the other hand, when the remaining suction force disappears, the sample S is simultaneously detached from the sample table 1 by the elastic force of the spring 8 and moves to the point B. As a result, the strain that should be detected by the load cell 9 is not detected, so the control device
10 judges that the sample S has come off, and the stepping motor 26
Is driven to push up the sample S to point C.

【0018】次に本発明装置にて試料の離脱試験を行っ
た結果について説明する。試料には重量が23g,直径が
6インチであるシリコンウェハを、バネには試料台の重
さ及び減圧による吸引力を考慮して、リフトピンがウェ
ハに当接してから2mm縮んだとき100 g の力が上方向に
加わるばね定数を有するステンレス製のものを用いた。
400 Vの電圧を試料台に印加してウェハを吸着し、この
状態を1分間保った後印加を止め、直ちにステッピング
モータ26を試料SがB点となるのに相当する分作動し
て、実際に試料SがB点に移動するまでの離脱時間を測
定した。
Next, the result of a sample detachment test conducted by the apparatus of the present invention will be described. A silicon wafer weighing 23 g and a diameter of 6 inches was used as the sample, and the spring was 100 g when the lift pin contracted 2 mm after the contact with the wafer, considering the weight of the sample stand and the suction force due to the reduced pressure. A stainless steel product having a spring constant to which force is applied upward was used.
A voltage of 400 V is applied to the sample table to adsorb the wafer, this state is maintained for 1 minute, then application is stopped, and immediately the stepping motor 26 is operated for the amount corresponding to the point B of the sample S. Then, the detachment time until the sample S moved to the point B was measured.

【0019】その結果前記離脱時間は、最短時間が10
秒,最長時間が60秒で、平均25秒であった。同様の条件
において従来装置では、安全性を考慮して印加を止めた
後90秒たってから離脱を開始していたが、この場合と比
べて本発明装置では平均で65秒短縮された。
As a result, the minimum withdrawal time is 10
The maximum time was 60 seconds, and the average time was 25 seconds. Under the same conditions, in the conventional apparatus, the separation was started 90 seconds after the application was stopped in consideration of safety, but the apparatus of the present invention shortened the average by 65 seconds compared to this case.

【0020】[0020]

【発明の効果】以上詳述した如く本発明の静電チャック
は、試料の落下及び割損等を生じることなく、吸着力の
消滅後直ちに試料を離脱することができるため、スルー
プット及び試料押上の信頼性が向上し、半導体製造装置
の効率も高くなる等、本発明は優れた効果を奏する。
As described above in detail, in the electrostatic chuck of the present invention, the sample can be removed immediately after the attraction force disappears without causing the sample to drop or be broken. The present invention has excellent effects such as improved reliability and higher efficiency of semiconductor manufacturing equipment.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の静電チャックを示す模式的断面図であ
る。
FIG. 1 is a schematic cross-sectional view showing an electrostatic chuck of the present invention.

【図2】本発明装置による試料の離脱,押上を説明する
部分的模式図である。
FIG. 2 is a partial schematic diagram for explaining separation and push-up of a sample by the device of the present invention.

【図3】従来の静電チャックを示す模式的断面図であ
る。
FIG. 3 is a schematic cross-sectional view showing a conventional electrostatic chuck.

【符号の説明】[Explanation of symbols]

1 試料台 2 導電体 3 絶縁体 4 リフトピン 5 水平 6 支持棒 8 バネ 9 ロードセル 10 制御装置 1 sample table 2 conductor 3 insulator 4 lift pin 5 horizontal 6 support rod 8 spring 9 load cell 10 controller

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 絶縁膜を被覆した導電体と被吸着物との
間に印加した直流電圧にて吸着力を発生して前記被吸着
物を吸着すべく構成してあり、前記被吸着物を前記導電
体から離脱する離脱手段を備えた静電チャックにおい
て、 弾性力を利用して前記被吸着物に前記導電体から離脱す
る方向へ、前記吸着力より弱い力を付与する離脱力付与
手段と、前記被吸着物に付与されている力を検出する手
段とを備え、前記吸着力が消滅後直ちに前記被吸着物を
前記導電体から離脱すべくなしてあることを特徴とする
静電チャック。
1. A direct current voltage applied between a conductor coated with an insulating film and an object to be adsorbed is used to generate an adsorbing force to adsorb the object to be adsorbed. In an electrostatic chuck having a detaching means for detaching from the conductor, a detaching force imparting means for imparting a force weaker than the attracting force to the attracted object in a direction of detaching from the conductor by utilizing elastic force, An electrostatic chuck comprising means for detecting a force applied to the object to be attracted, and the object to be attracted is separated from the conductor immediately after the attraction force disappears.
JP3807293A 1993-02-26 1993-02-26 Electrostatic chuck Pending JPH06252253A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3807293A JPH06252253A (en) 1993-02-26 1993-02-26 Electrostatic chuck

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3807293A JPH06252253A (en) 1993-02-26 1993-02-26 Electrostatic chuck

Publications (1)

Publication Number Publication Date
JPH06252253A true JPH06252253A (en) 1994-09-09

Family

ID=12515290

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3807293A Pending JPH06252253A (en) 1993-02-26 1993-02-26 Electrostatic chuck

Country Status (1)

Country Link
JP (1) JPH06252253A (en)

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09120987A (en) * 1995-07-10 1997-05-06 Watkins Johnson Co Electrostatic chuck assembly
JPH10150099A (en) * 1996-11-20 1998-06-02 Tokyo Electron Ltd Method for detaching electromagnetic chuck
US5815366A (en) * 1994-12-28 1998-09-29 Sumitomo Metal Industries, Ltd. Electrostatic chuck and the method of operating the same
JPH11354610A (en) * 1998-06-11 1999-12-24 Matsushita Electric Ind Co Ltd Substrate transfer apparatus and method therefor
JP2000349139A (en) * 1999-06-03 2000-12-15 Matsushita Electric Ind Co Ltd Substrate detaching control method of vacuum treater and vacuum treater
JP2001053134A (en) * 1999-08-10 2001-02-23 Anelva Corp Electrostatic attraction stage and substrate processing system
CN1067177C (en) * 1995-11-24 2001-06-13 日本电气株式会社 Electrostatic chuck
JP2005101505A (en) * 2003-03-13 2005-04-14 Ventec-Ges Fuer Venturekapital & Unternehmensberatung Mbh Mobile and transportable type electrostatic substrate holder
JP2005259870A (en) * 2004-03-10 2005-09-22 Nikon Corp Substrate retainer, stage device, exposing device and exposing method
JP2006313766A (en) * 2005-05-06 2006-11-16 Nikon Corp Substrate holder, stage apparatus and exposure apparatus
KR100734671B1 (en) * 2005-12-28 2007-07-02 동부일렉트로닉스 주식회사 Electro static chuck apparatus for manufacturing semiconductor device
JP2009164620A (en) * 2009-02-13 2009-07-23 Canon Anelva Corp Sputtering apparatus
JP2012521652A (en) * 2009-03-24 2012-09-13 ラム リサーチ コーポレーション Method and apparatus for suppressing potential spike during dechucking
JP2013062301A (en) * 2011-09-12 2013-04-04 Fujitsu Semiconductor Ltd Electronic component manufacturing apparatus
WO2022201648A1 (en) * 2021-03-23 2022-09-29 株式会社東京精密 Workpiece holding device
US11984344B2 (en) 2019-11-25 2024-05-14 Samsung Electronics Co., Ltd. Lift apparatus and substrate processing apparatus including the same

Cited By (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5815366A (en) * 1994-12-28 1998-09-29 Sumitomo Metal Industries, Ltd. Electrostatic chuck and the method of operating the same
JPH09120987A (en) * 1995-07-10 1997-05-06 Watkins Johnson Co Electrostatic chuck assembly
US5838528A (en) * 1995-07-10 1998-11-17 Watkins-Johnson Company Electrostatic chuck assembly
CN1067177C (en) * 1995-11-24 2001-06-13 日本电气株式会社 Electrostatic chuck
JPH10150099A (en) * 1996-11-20 1998-06-02 Tokyo Electron Ltd Method for detaching electromagnetic chuck
JPH11354610A (en) * 1998-06-11 1999-12-24 Matsushita Electric Ind Co Ltd Substrate transfer apparatus and method therefor
JP2000349139A (en) * 1999-06-03 2000-12-15 Matsushita Electric Ind Co Ltd Substrate detaching control method of vacuum treater and vacuum treater
JP2001053134A (en) * 1999-08-10 2001-02-23 Anelva Corp Electrostatic attraction stage and substrate processing system
JP2005101505A (en) * 2003-03-13 2005-04-14 Ventec-Ges Fuer Venturekapital & Unternehmensberatung Mbh Mobile and transportable type electrostatic substrate holder
JP2005259870A (en) * 2004-03-10 2005-09-22 Nikon Corp Substrate retainer, stage device, exposing device and exposing method
JP2006313766A (en) * 2005-05-06 2006-11-16 Nikon Corp Substrate holder, stage apparatus and exposure apparatus
KR100734671B1 (en) * 2005-12-28 2007-07-02 동부일렉트로닉스 주식회사 Electro static chuck apparatus for manufacturing semiconductor device
JP2009164620A (en) * 2009-02-13 2009-07-23 Canon Anelva Corp Sputtering apparatus
JP2012521652A (en) * 2009-03-24 2012-09-13 ラム リサーチ コーポレーション Method and apparatus for suppressing potential spike during dechucking
JP2013062301A (en) * 2011-09-12 2013-04-04 Fujitsu Semiconductor Ltd Electronic component manufacturing apparatus
US11984344B2 (en) 2019-11-25 2024-05-14 Samsung Electronics Co., Ltd. Lift apparatus and substrate processing apparatus including the same
WO2022201648A1 (en) * 2021-03-23 2022-09-29 株式会社東京精密 Workpiece holding device

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