JPH0493948A - Photomask - Google Patents

Photomask

Info

Publication number
JPH0493948A
JPH0493948A JP2208532A JP20853290A JPH0493948A JP H0493948 A JPH0493948 A JP H0493948A JP 2208532 A JP2208532 A JP 2208532A JP 20853290 A JP20853290 A JP 20853290A JP H0493948 A JPH0493948 A JP H0493948A
Authority
JP
Japan
Prior art keywords
film
pattern
glass substrate
patterns
photomask
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2208532A
Other languages
Japanese (ja)
Inventor
Michiaki Ishihara
石原 道明
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Yamagata Ltd
Original Assignee
NEC Yamagata Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Yamagata Ltd filed Critical NEC Yamagata Ltd
Priority to JP2208532A priority Critical patent/JPH0493948A/en
Publication of JPH0493948A publication Critical patent/JPH0493948A/en
Pending legal-status Critical Current

Links

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  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To eliminate the drop-outs at the ends of patterns by a washing stage by providing a transparent film on a photomask formed with patterns consisting of a metallic film or metal oxide film on a transparent substrate. CONSTITUTION:The metallic film (or metallic oxide film) consisting of Cr, etc., is formed at 500 to 3,000Angstrom thickness on the glass substrate 11 and is patterned to form patterns 13 for light shielding. The surface of the glass substrate formed with the patterns 13 is washed and thereafter, a fluorine polymer soln. is applied by a spin coating method on the surface to form a thin transparent film 14. The thin transparent film 14 is formed on the rear surface of the glass substrate 11 as well. The clean pattern surface is obtd. by peeling the thin transparent film 14 after the use of the photomask and, therefore, the need for a washing stage is eliminated. The thin transparent film is again used on the surface of the pattern 13 in the case of reuse.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 本発明はフォトマスクに関し、特にパターンの保護膜に
関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask, and more particularly to a protective film for a pattern.

〔従来の技術〕[Conventional technology]

集積回路等の製造で、いろいろなデバイス及び回路接続
は、フォトマスクを用いて形成され、そのフォトマスク
は、使用後あるいは定期的に洗浄される。従来のフォト
マスクは、ガラス等の透明基板上に厚さ500〜300
0人の金属又は金属酸化物がパターン加工されたままの
状態となっていた。
In the manufacture of integrated circuits and the like, various devices and circuit connections are formed using photomasks, which are cleaned after use or periodically. Conventional photomasks have a thickness of 500 to 300 mm on a transparent substrate such as glass.
0 metals or metal oxides remained patterned.

〔発明が解決しようとする課題〕[Problem to be solved by the invention]

上述した従来のフォトマスクは、使用後あるいは定期的
に洗浄しなければならないため、洗浄コストが発生する
The conventional photomask described above must be cleaned after use or periodically, resulting in cleaning costs.

また、洗浄する時に加える圧力にもよるが、10回以上
洗浄した時金属又は金属酸化物からなるパターンの端部
が欠落し、使用できなくなるという欠点がある。
Another disadvantage is that, depending on the pressure applied during cleaning, the edges of the pattern made of metal or metal oxide may be lost after 10 or more cleanings, making it unusable.

〔課題を解決するための手段〕[Means to solve the problem]

本発明のフォトマスクは、透明基板上に金属膜または金
属酸化膜によるパターンが形成されたフォトマスクにお
いて、前記パターンを含む透明基板表面に透明な膜を設
けたものである。
The photomask of the present invention is a photomask in which a pattern of a metal film or a metal oxide film is formed on a transparent substrate, and a transparent film is provided on the surface of the transparent substrate including the pattern.

〔実施例〕〔Example〕

次に、本発明の実施例について図面を参照して説明する
Next, embodiments of the present invention will be described with reference to the drawings.

第1図は本発明の第1の実施例を説明するための断面図
である。以下製造工程順に説明する。
FIG. 1 is a sectional view for explaining a first embodiment of the present invention. The manufacturing steps will be explained below in order.

まず第1図(a)に示すように、ガラス基板11上にC
r等の金属膜(または金属酸化膜)を500〜3000
人の厚さに形成したのちパターニングし、遮光用のパタ
ーン13を形成する。従来のフォトマスクはこの状態で
使用される。
First, as shown in FIG. 1(a), C is placed on the glass substrate 11.
Metal film (or metal oxide film) such as r etc. 500-3000
After forming it to a human thickness, it is patterned to form a light shielding pattern 13. A conventional photomask is used in this state.

次に第1図(b)に示すように、パターン13が形成さ
れたガラス基板表面を洗浄したのち、例えばフッ素系ポ
リマー溶液をスピンコード法により塗布し、透明薄膜1
4を形成する。
Next, as shown in FIG. 1(b), after cleaning the surface of the glass substrate on which the pattern 13 is formed, a fluorine-based polymer solution is applied, for example, by a spin code method, and a transparent thin film 1
form 4.

次に第1図(c)に示すように、必要に応じてガラス基
板11の裏面にも透明薄膜14を形成する。
Next, as shown in FIG. 1(c), a transparent thin film 14 is also formed on the back surface of the glass substrate 11, if necessary.

このように構成された第1の実施例によれば、フォトマ
スク使用後は透明薄膜14を剥すことにより清浄なパタ
ーン面を得ることができるので、従来のように洗浄工程
は不要となる。再使用する場合は再びパターン13の面
に透明薄膜を形成する。
According to the first embodiment configured in this manner, a clean pattern surface can be obtained by peeling off the transparent thin film 14 after using the photomask, so that a cleaning process as in the conventional method is not necessary. When reusing the pattern 13, a transparent thin film is formed on the surface of the pattern 13 again.

尚、透明薄j114の除去は、物理的に剥がすか、フロ
ン溶剤やTa酸等の溶剤による溶解によって行なう。
Note that the transparent thin film j 114 can be removed by physically peeling it off or by dissolving it with a solvent such as a fluorocarbon solvent or Ta acid.

第2図は本発明の第2の実施例を説明するための断面図
である。
FIG. 2 is a sectional view for explaining a second embodiment of the present invention.

まず第2図(a)に示すように、第1の実施例と同様に
ガラス基板11上にパターン13を形成する。
First, as shown in FIG. 2(a), a pattern 13 is formed on a glass substrate 11 in the same manner as in the first embodiment.

次に第2図(b)に示すように、サラン樹脂膜やビニー
ル樹脂膜等の透明薄膜24をガラス基板11の表面に張
り付け、パターン13を覆う。
Next, as shown in FIG. 2(b), a transparent thin film 24 such as a Saran resin film or a vinyl resin film is applied to the surface of the glass substrate 11 to cover the pattern 13.

以下必要に応じて第2図(c)に示すように、ガラス基
板11の裏面にも透明薄膜24を張り付ける。
Thereafter, a transparent thin film 24 is attached to the back surface of the glass substrate 11 as well, as shown in FIG. 2(c), if necessary.

本第2の実施例における透明薄膜24の除去方法も第1
の実施例の場合と同様に行なう。
The method for removing the transparent thin film 24 in the second embodiment is also the same as that in the first embodiment.
This is done in the same manner as in the embodiment.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明は、パターンを含む透明基板
表面に透明薄膜を設けることにより、マスク使用後その
透明薄膜を剥がすだけで、マスク洗浄後の清浄度のまま
の表面が得られるので、洗浄工程によるパターン端部の
欠落をなくすことができ、マスク寿命を2倍以上にのば
すことができる効果がある。
As explained above, the present invention provides a transparent thin film on the surface of a transparent substrate including a pattern, so that by simply peeling off the transparent thin film after using the mask, the surface remains as clean as after cleaning the mask. It is possible to eliminate the loss of pattern edges due to the process, and has the effect of more than doubling the life of the mask.

【図面の簡単な説明】[Brief explanation of drawings]

第1図及び第2図は本発明の第1及び第2の実施例を説
明するための断面図である。 11・・・ガラス基板、13・・・パターン、14゜2
4・・・透明薄膜。
1 and 2 are sectional views for explaining first and second embodiments of the present invention. 11...Glass substrate, 13...Pattern, 14゜2
4...Transparent thin film.

Claims (1)

【特許請求の範囲】[Claims]  透明基板上に金属膜または金属酸化膜によるパターン
が形成されたフォトマスクにおいて、前記パターンを含
む透明基板表面に透明な膜を設けたことを特徴とするフ
ォトマスク。
1. A photomask in which a pattern of a metal film or a metal oxide film is formed on a transparent substrate, characterized in that a transparent film is provided on the surface of the transparent substrate including the pattern.
JP2208532A 1990-08-07 1990-08-07 Photomask Pending JPH0493948A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2208532A JPH0493948A (en) 1990-08-07 1990-08-07 Photomask

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2208532A JPH0493948A (en) 1990-08-07 1990-08-07 Photomask

Publications (1)

Publication Number Publication Date
JPH0493948A true JPH0493948A (en) 1992-03-26

Family

ID=16557748

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2208532A Pending JPH0493948A (en) 1990-08-07 1990-08-07 Photomask

Country Status (1)

Country Link
JP (1) JPH0493948A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007206184A (en) * 2006-01-31 2007-08-16 Dainippon Printing Co Ltd Photomask, its manufacturing method, and pattern transfer method
US10969677B2 (en) * 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007206184A (en) * 2006-01-31 2007-08-16 Dainippon Printing Co Ltd Photomask, its manufacturing method, and pattern transfer method
US10969677B2 (en) * 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask
US10969686B2 (en) 2016-01-27 2021-04-06 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby
US11029596B2 (en) 2016-01-27 2021-06-08 Lg Chem, Ltd. Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby

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