JPH0493948A - Photomask - Google Patents
PhotomaskInfo
- Publication number
- JPH0493948A JPH0493948A JP2208532A JP20853290A JPH0493948A JP H0493948 A JPH0493948 A JP H0493948A JP 2208532 A JP2208532 A JP 2208532A JP 20853290 A JP20853290 A JP 20853290A JP H0493948 A JPH0493948 A JP H0493948A
- Authority
- JP
- Japan
- Prior art keywords
- film
- pattern
- glass substrate
- patterns
- photomask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 claims abstract description 17
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 7
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 6
- 229910052751 metal Inorganic materials 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 239000011521 glass Substances 0.000 abstract description 11
- 238000000034 method Methods 0.000 abstract description 5
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052731 fluorine Inorganic materials 0.000 abstract description 2
- 239000011737 fluorine Substances 0.000 abstract description 2
- 229920000642 polymer Polymers 0.000 abstract description 2
- 238000005406 washing Methods 0.000 abstract 2
- 238000004528 spin coating Methods 0.000 abstract 1
- 239000010409 thin film Substances 0.000 description 11
- 239000010408 film Substances 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- NBVXSUQYWXRMNV-UHFFFAOYSA-N fluoromethane Chemical compound FC NBVXSUQYWXRMNV-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 229920002554 vinyl polymer Polymers 0.000 description 1
Landscapes
- Preparing Plates And Mask In Photomechanical Process (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明はフォトマスクに関し、特にパターンの保護膜に
関する。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a photomask, and more particularly to a protective film for a pattern.
集積回路等の製造で、いろいろなデバイス及び回路接続
は、フォトマスクを用いて形成され、そのフォトマスク
は、使用後あるいは定期的に洗浄される。従来のフォト
マスクは、ガラス等の透明基板上に厚さ500〜300
0人の金属又は金属酸化物がパターン加工されたままの
状態となっていた。In the manufacture of integrated circuits and the like, various devices and circuit connections are formed using photomasks, which are cleaned after use or periodically. Conventional photomasks have a thickness of 500 to 300 mm on a transparent substrate such as glass.
0 metals or metal oxides remained patterned.
上述した従来のフォトマスクは、使用後あるいは定期的
に洗浄しなければならないため、洗浄コストが発生する
。The conventional photomask described above must be cleaned after use or periodically, resulting in cleaning costs.
また、洗浄する時に加える圧力にもよるが、10回以上
洗浄した時金属又は金属酸化物からなるパターンの端部
が欠落し、使用できなくなるという欠点がある。Another disadvantage is that, depending on the pressure applied during cleaning, the edges of the pattern made of metal or metal oxide may be lost after 10 or more cleanings, making it unusable.
本発明のフォトマスクは、透明基板上に金属膜または金
属酸化膜によるパターンが形成されたフォトマスクにお
いて、前記パターンを含む透明基板表面に透明な膜を設
けたものである。The photomask of the present invention is a photomask in which a pattern of a metal film or a metal oxide film is formed on a transparent substrate, and a transparent film is provided on the surface of the transparent substrate including the pattern.
次に、本発明の実施例について図面を参照して説明する
。Next, embodiments of the present invention will be described with reference to the drawings.
第1図は本発明の第1の実施例を説明するための断面図
である。以下製造工程順に説明する。FIG. 1 is a sectional view for explaining a first embodiment of the present invention. The manufacturing steps will be explained below in order.
まず第1図(a)に示すように、ガラス基板11上にC
r等の金属膜(または金属酸化膜)を500〜3000
人の厚さに形成したのちパターニングし、遮光用のパタ
ーン13を形成する。従来のフォトマスクはこの状態で
使用される。First, as shown in FIG. 1(a), C is placed on the glass substrate 11.
Metal film (or metal oxide film) such as r etc. 500-3000
After forming it to a human thickness, it is patterned to form a light shielding pattern 13. A conventional photomask is used in this state.
次に第1図(b)に示すように、パターン13が形成さ
れたガラス基板表面を洗浄したのち、例えばフッ素系ポ
リマー溶液をスピンコード法により塗布し、透明薄膜1
4を形成する。Next, as shown in FIG. 1(b), after cleaning the surface of the glass substrate on which the pattern 13 is formed, a fluorine-based polymer solution is applied, for example, by a spin code method, and a transparent thin film 1
form 4.
次に第1図(c)に示すように、必要に応じてガラス基
板11の裏面にも透明薄膜14を形成する。Next, as shown in FIG. 1(c), a transparent thin film 14 is also formed on the back surface of the glass substrate 11, if necessary.
このように構成された第1の実施例によれば、フォトマ
スク使用後は透明薄膜14を剥すことにより清浄なパタ
ーン面を得ることができるので、従来のように洗浄工程
は不要となる。再使用する場合は再びパターン13の面
に透明薄膜を形成する。According to the first embodiment configured in this manner, a clean pattern surface can be obtained by peeling off the transparent thin film 14 after using the photomask, so that a cleaning process as in the conventional method is not necessary. When reusing the pattern 13, a transparent thin film is formed on the surface of the pattern 13 again.
尚、透明薄j114の除去は、物理的に剥がすか、フロ
ン溶剤やTa酸等の溶剤による溶解によって行なう。Note that the transparent thin film j 114 can be removed by physically peeling it off or by dissolving it with a solvent such as a fluorocarbon solvent or Ta acid.
第2図は本発明の第2の実施例を説明するための断面図
である。FIG. 2 is a sectional view for explaining a second embodiment of the present invention.
まず第2図(a)に示すように、第1の実施例と同様に
ガラス基板11上にパターン13を形成する。First, as shown in FIG. 2(a), a pattern 13 is formed on a glass substrate 11 in the same manner as in the first embodiment.
次に第2図(b)に示すように、サラン樹脂膜やビニー
ル樹脂膜等の透明薄膜24をガラス基板11の表面に張
り付け、パターン13を覆う。Next, as shown in FIG. 2(b), a transparent thin film 24 such as a Saran resin film or a vinyl resin film is applied to the surface of the glass substrate 11 to cover the pattern 13.
以下必要に応じて第2図(c)に示すように、ガラス基
板11の裏面にも透明薄膜24を張り付ける。Thereafter, a transparent thin film 24 is attached to the back surface of the glass substrate 11 as well, as shown in FIG. 2(c), if necessary.
本第2の実施例における透明薄膜24の除去方法も第1
の実施例の場合と同様に行なう。The method for removing the transparent thin film 24 in the second embodiment is also the same as that in the first embodiment.
This is done in the same manner as in the embodiment.
以上説明したように本発明は、パターンを含む透明基板
表面に透明薄膜を設けることにより、マスク使用後その
透明薄膜を剥がすだけで、マスク洗浄後の清浄度のまま
の表面が得られるので、洗浄工程によるパターン端部の
欠落をなくすことができ、マスク寿命を2倍以上にのば
すことができる効果がある。As explained above, the present invention provides a transparent thin film on the surface of a transparent substrate including a pattern, so that by simply peeling off the transparent thin film after using the mask, the surface remains as clean as after cleaning the mask. It is possible to eliminate the loss of pattern edges due to the process, and has the effect of more than doubling the life of the mask.
第1図及び第2図は本発明の第1及び第2の実施例を説
明するための断面図である。
11・・・ガラス基板、13・・・パターン、14゜2
4・・・透明薄膜。1 and 2 are sectional views for explaining first and second embodiments of the present invention. 11...Glass substrate, 13...Pattern, 14゜2
4...Transparent thin film.
Claims (1)
が形成されたフォトマスクにおいて、前記パターンを含
む透明基板表面に透明な膜を設けたことを特徴とするフ
ォトマスク。1. A photomask in which a pattern of a metal film or a metal oxide film is formed on a transparent substrate, characterized in that a transparent film is provided on the surface of the transparent substrate including the pattern.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2208532A JPH0493948A (en) | 1990-08-07 | 1990-08-07 | Photomask |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2208532A JPH0493948A (en) | 1990-08-07 | 1990-08-07 | Photomask |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH0493948A true JPH0493948A (en) | 1992-03-26 |
Family
ID=16557748
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2208532A Pending JPH0493948A (en) | 1990-08-07 | 1990-08-07 | Photomask |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0493948A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007206184A (en) * | 2006-01-31 | 2007-08-16 | Dainippon Printing Co Ltd | Photomask, its manufacturing method, and pattern transfer method |
US10969677B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
US10969686B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
-
1990
- 1990-08-07 JP JP2208532A patent/JPH0493948A/en active Pending
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007206184A (en) * | 2006-01-31 | 2007-08-16 | Dainippon Printing Co Ltd | Photomask, its manufacturing method, and pattern transfer method |
US10969677B2 (en) * | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask |
US10969686B2 (en) | 2016-01-27 | 2021-04-06 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
US11029596B2 (en) | 2016-01-27 | 2021-06-08 | Lg Chem, Ltd. | Film mask, method for manufacturing same, and method for forming pattern using film mask and pattern formed thereby |
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