JPH04278560A - Manufacture of semiconductor device - Google Patents
Manufacture of semiconductor deviceInfo
- Publication number
- JPH04278560A JPH04278560A JP4042791A JP4042791A JPH04278560A JP H04278560 A JPH04278560 A JP H04278560A JP 4042791 A JP4042791 A JP 4042791A JP 4042791 A JP4042791 A JP 4042791A JP H04278560 A JPH04278560 A JP H04278560A
- Authority
- JP
- Japan
- Prior art keywords
- film resistor
- semiconductor device
- semiconductor
- film
- test pads
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 31
- 238000004519 manufacturing process Methods 0.000 title claims description 5
- 238000012360 testing method Methods 0.000 claims abstract description 14
- 238000000034 method Methods 0.000 claims abstract description 12
- 238000007689 inspection Methods 0.000 abstract description 8
- 230000001681 protective effect Effects 0.000 abstract description 4
- 238000011179 visual inspection Methods 0.000 abstract description 2
- 239000008188 pellet Substances 0.000 abstract 2
- 230000007547 defect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
Landscapes
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
Description
【0001】0001
【産業上の利用分野】本発明は半導体装置の製造方法に
関し、特に半導体チップの選別方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing semiconductor devices, and more particularly to a method for selecting semiconductor chips.
【0002】0002
【従来の技術】従来の半導体装置の選別方法は、図3に
示すようにウェーハ状態にて、各ボンディング・パッド
部6に、各針状電極7を接続し、半導体チップ13の特
性検査を実施する。その後、ダイシング工程を経て、個
々の半導体チップに分離し、顕微鏡による外観検査を実
施し、キズ10,クラック11,付着した異物12等の
ある外観不良の半導体チップを除去している。残った外
観良品の半導体チップは、以後組立工程,選別工程を経
て、最終的な半導体装置として完成する。2. Description of the Related Art In a conventional semiconductor device sorting method, as shown in FIG. 3, each needle-like electrode 7 is connected to each bonding pad portion 6 in a wafer state, and the characteristics of a semiconductor chip 13 are inspected. do. Thereafter, the semiconductor chips are separated into individual semiconductor chips through a dicing process, and a visual inspection is performed using a microscope to remove semiconductor chips with poor external appearance, such as scratches 10, cracks 11, and attached foreign matter 12. The remaining semiconductor chips with good appearance are then subjected to an assembly process and a sorting process to be completed as a final semiconductor device.
【0003】0003
【発明が解決しようとする課題】この従来の半導体装置
の製造方法では、外観良品の半導体チップを選別するま
でに多大の工数がかかっているため、半導体装置のコス
トが高くなり、かつ納期短縮の妨げになってきた。また
、外観検査工程における人的ミスによる外観不良の半導
体チップの混入の危険性も極めて高いという問題点があ
った。[Problems to be Solved by the Invention] In this conventional semiconductor device manufacturing method, a large number of man-hours are required to select semiconductor chips with good appearance, which increases the cost of the semiconductor device and shortens the delivery time. It has become a hindrance. Furthermore, there is a problem in that there is an extremely high risk that semiconductor chips with poor appearance may be mixed in due to human error in the appearance inspection process.
【0004】0004
【課題を解決するための手段】本発明の半導体装置の製
造方法は、半導体チップの表面保護膜上のボンディング
・パッド部を除く面に網目状の膜抵抗体および前記膜抵
抗体に一対の検査用パッドを設ける工程と、前記一対の
検査用パッドに針状電極を接触させて前記膜抵抗体の抵
抗体を測定して前記半導体チップを選別する工程とを有
するというものである。[Means for Solving the Problems] A method for manufacturing a semiconductor device according to the present invention includes a mesh-shaped film resistor on a surface of a semiconductor chip except for a bonding pad portion on a surface protection film, and a pair of inspections on the film resistor. and a step of bringing a needle electrode into contact with the pair of test pads to measure the resistance of the film resistor and sorting the semiconductor chips.
【0005】[0005]
【実施例】次に、本発明について図面を参照して説明す
る。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, the present invention will be explained with reference to the drawings.
【0006】図1は、本発明の一実施例の説明に使用す
るウェーハの平面図である。半導体装置に使用する半導
体チップ1の表面保護膜2上に、ボンディング・パッド
部6を除く一面に、一定の厚さと幅を有する抵抗膜を等
間隔に格子状に配置して網目状の膜抵抗体3を設ける。
このような正方形状の膜抵抗体の対角線上に一対の検査
用パッド4,5を設ける。ボンディング・パッド部6に
、針状電極7を接続し、特性検査を実施すると同時に、
検査用パッド4,5に他の針状電極8,9を接続し、検
査用パッド4と5の間の抵抗値を測定することにより、
特性検査のみでは除去しきれない表面保護膜2上のキズ
10,クラック11,異物付着12等の外観検査不良の
半導体チップ1を電気的、かつ瞬時に除去することが可
能になる。FIG. 1 is a plan view of a wafer used to explain one embodiment of the present invention. On the surface protective film 2 of a semiconductor chip 1 used in a semiconductor device, resistive films having a constant thickness and width are arranged in a lattice pattern at equal intervals on one surface excluding the bonding pad portion 6 to form a mesh-like film resistor. A body 3 is provided. A pair of test pads 4 and 5 are provided on diagonal lines of such a square film resistor. At the same time as connecting the needle electrode 7 to the bonding pad portion 6 and performing a characteristic test,
By connecting other needle electrodes 8 and 9 to the test pads 4 and 5 and measuring the resistance value between the test pads 4 and 5,
It becomes possible to electrically and instantaneously remove semiconductor chips 1 that have defects in appearance inspection, such as scratches 10, cracks 11, foreign matter adhesion 12, etc. on the surface protection film 2, which cannot be removed only by characteristic inspection.
【0007】図2は、本実施例に使用した膜抵抗体の模
式図である。等間隔に配置されかつ網目状に交差してい
る2N(N≧2)本の抵抗膜の抵抗値を網の目一こまの
一辺あたりr〔Ω〕とし、両端の検査用パッド4と5の
間に、電圧Vボルトを印加した時に、電流I〔A〕が流
れたとすると、式(1)が成立つFIG. 2 is a schematic diagram of the membrane resistor used in this example. The resistance value of 2N (N≧2) resistive films arranged at equal intervals and intersecting in a mesh pattern is defined as r [Ω] per side of each mesh, and the resistance value is set between the test pads 4 and 5 at both ends. If a current I [A] flows when a voltage V volt is applied to the
【0008】[0008]
【0009】すなわち、検査用パッド4と5の間の抵抗
値Rは、交差数(Nの2乗)により、決定される。した
がって、交差数を大きくし、抵抗の間隔を狭くすること
により、キズ,クラック,異物付着等の外観検査不良モ
ードをより、敏感に検出することが可能になる。That is, the resistance value R between the test pads 4 and 5 is determined by the number of intersections (N squared). Therefore, by increasing the number of intersections and narrowing the interval between the resistors, it becomes possible to more sensitively detect appearance inspection failure modes such as scratches, cracks, and foreign matter adhesion.
【0010】0010
【発明の効果】以上説明したように本発明は、半導体装
置に使用する半導体チップの表面保護膜上のボンディン
グ・パッド部を除く面に網目状の膜抵抗体およびその両
端に検査用パッドを設けることにより、ボンディング・
パッド部と針状電極とを接続し、特性検査を実施するの
と同時に、検査用パッド部に、他の針状電極を接続し、
検査用バッド間の抵抗値の試験を実施することにより半
導体チップの表面保護膜上のキズ,クラック,異物付着
等の不良を電気的かつ瞬時に検出することができ、半導
体チップの選択工程の簡略化もしくは高精化が可能とな
るという効果を有する。As explained above, the present invention provides a mesh film resistor on the surface of a semiconductor chip used in a semiconductor device, excluding the bonding pad portion, on the surface of the surface protection film, and test pads on both ends thereof. By this, bonding
At the same time as connecting the pad part and the needle-like electrode and performing a characteristic test, connect another needle-like electrode to the test pad part,
By testing the resistance value between inspection pads, defects such as scratches, cracks, and foreign matter adhesion on the surface protective film of semiconductor chips can be electrically and instantaneously detected, simplifying the semiconductor chip selection process. This has the effect of making it possible to achieve high resolution or high precision.
【図1】本発明の一実施例の説明に使用する平面図であ
る。FIG. 1 is a plan view used to explain one embodiment of the present invention.
【図2】本発明の一実施例の説明に使用する模式図であ
る。FIG. 2 is a schematic diagram used to explain one embodiment of the present invention.
【図3】従来技術の説明に使用する平面図である。FIG. 3 is a plan view used to explain the prior art.
1 半導体チップ 2 表面保護膜 3 膜抵抗体 4,5 検査用パッド 6 ボンディング・パッド 7,8,9 針状電極 10 キズ 11 クラック 12 付着した異物 13 ウェーハ 1 Semiconductor chip 2 Surface protective film 3 Film resistor 4,5 Inspection pad 6 Bonding pad 7, 8, 9 Needle electrode 10 Scratches 11 Crack 12. Adhering foreign matter 13 Wafer
Claims (1)
ィング・パッド部を除く面に網目状の膜抵抗体および前
記膜抵抗体に一対の検査用パッドを設ける工程と、前記
一対の検査用パッドに針状電極を接触させて前記膜抵抗
体の抵抗体を測定して前記半導体チップを選別する工程
とを有することを特徴とする半導体装置の製法方法。1. A step of providing a mesh-like film resistor on a surface of a surface protection film of a semiconductor chip excluding a bonding pad portion, and a pair of test pads on the film resistor, and a step of providing a pair of test pads on the film resistor, A method for manufacturing a semiconductor device, comprising the step of selecting the semiconductor chips by measuring the resistance of the film resistor by bringing a needle-like electrode into contact with the film resistor.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4042791A JPH04278560A (en) | 1991-03-07 | 1991-03-07 | Manufacture of semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP4042791A JPH04278560A (en) | 1991-03-07 | 1991-03-07 | Manufacture of semiconductor device |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH04278560A true JPH04278560A (en) | 1992-10-05 |
Family
ID=12580354
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP4042791A Pending JPH04278560A (en) | 1991-03-07 | 1991-03-07 | Manufacture of semiconductor device |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH04278560A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003084042A (en) * | 2001-09-12 | 2003-03-19 | Hitachi Ltd | Semiconductor device and inspecting device for it |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263236A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Semiconductor device |
JPH01216278A (en) * | 1988-01-29 | 1989-08-30 | Hewlett Packard Co <Hp> | Testing of random defect for electronically microscopic structural body |
-
1991
- 1991-03-07 JP JP4042791A patent/JPH04278560A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS61263236A (en) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | Semiconductor device |
JPH01216278A (en) * | 1988-01-29 | 1989-08-30 | Hewlett Packard Co <Hp> | Testing of random defect for electronically microscopic structural body |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003084042A (en) * | 2001-09-12 | 2003-03-19 | Hitachi Ltd | Semiconductor device and inspecting device for it |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 19980224 |