JPH04151834A - Chemical liquid atmosphere isolation equipment - Google Patents
Chemical liquid atmosphere isolation equipmentInfo
- Publication number
- JPH04151834A JPH04151834A JP27532090A JP27532090A JPH04151834A JP H04151834 A JPH04151834 A JP H04151834A JP 27532090 A JP27532090 A JP 27532090A JP 27532090 A JP27532090 A JP 27532090A JP H04151834 A JPH04151834 A JP H04151834A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- atmosphere
- silicon wafer
- cleaning
- diaphragm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000126 substance Substances 0.000 title claims abstract description 20
- 239000007788 liquid Substances 0.000 title claims abstract 3
- 238000002955 isolation Methods 0.000 title abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 33
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 33
- 239000010703 silicon Substances 0.000 claims abstract description 33
- 238000004140 cleaning Methods 0.000 claims description 34
- 238000005192 partition Methods 0.000 claims description 15
- 238000000926 separation method Methods 0.000 claims description 8
- 235000012431 wafers Nutrition 0.000 abstract description 35
- 238000005406 washing Methods 0.000 abstract description 6
- 230000006698 induction Effects 0.000 abstract 1
- 239000007789 gas Substances 0.000 description 32
- 238000000034 method Methods 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 241000257465 Echinoidea Species 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Landscapes
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、シリコンウェハの洗浄工程においてシリコン
ウェハを薬液洗浄するための洗浄室間を、仕切り壁を用
いないでシリコンウェハの搬送可能なまま薬液雰囲気に
関して分離°ｒる装置に関する。Detailed Description of the Invention (Field of Industrial Application) The present invention provides a method for cleaning silicon wafers between cleaning chambers for chemically cleaning silicon wafers in a silicon wafer cleaning process without using a partition wall. The present invention relates to a device for separating chemical atmosphere.
（従来の技術）
シリコンウェハの製造上程において、シリコンウェハの
表面は清浄に保つ必要がある。たとえば、７オトエツチ
ングの際にシリコンウェハの表面に■−
塵が付着している等の汚染があると配線ショートや断線
の原因となる等、製品の性能と信頼性を向」ニさせるた
めにはシリコンウェハの表面の汚染物質を極力低減させ
る必要がある。そのため、シリコンウェハ製造上程中に
おいて酸化膜生成前の前洗浄、７オトエツチング後の後
洗浄等の洗浄工程が設けられている。(Prior Art) During the manufacturing process of silicon wafers, it is necessary to keep the surface of the silicon wafer clean. For example, if there is contamination such as dust on the surface of a silicon wafer during etching, it may cause wiring shorts or breaks, so in order to improve product performance and reliability, It is necessary to reduce contaminants on the surface of silicon wafers as much as possible. Therefore, cleaning steps such as pre-cleaning before oxide film formation and post-cleaning after etching are provided during the silicon wafer manufacturing process.
シリコンウェハの洗浄は、第５図に示すようにウェハキ
ャリア１１にシリコンウェハ１１０を何枚かまとめて平
行にセットし、Ｎ ＩＩ ４０ ｔｌ ＋ ｔＩ２０２
十Ｈ２０、ＩＩ Ｃ＋ ＋ １１７０ 、 ＋ １（２
０等の薬ｉ良の入った薬液洗浄槽１２Δにウニハキトリ
ア１１ごと浸漬し、薬液洗浄後は純水洗浄槽１３Ａに浸
漬することにより行っている。To clean the silicon wafers, several silicon wafers 110 are set in parallel on the wafer carrier 11 as shown in FIG.
10H20, II C+ + 1170, + 1 (2
The whole sea urchin leaflet 11 is immersed in a chemical cleaning tank 12Δ containing a drug of good quality such as 0, etc., and after cleaning with the chemical, it is immersed in a pure water cleaning tank 13A.
ところで、これら薬液は洗浄効果をＩＤ１めるため加熱
することが多い。たとえば、Ｎ Ｉ−１４（’） Ｈや
ｌＩＣ１の場合には８０℃程度、ＩＩ ２Ｓ Ｏ、や育
成溶剤のノクロルベンゼン等を用いる場合には１２０°
Ｃ程度に加熱する。そうすると、加熱された薬液洗浄槽
１２Ａからは薬液や水分が蒸発し、薬液洗浄一
槽１２Ａを含む洗浄室１４Ａ内は当該薬液の雰囲気とな
る。Incidentally, these chemical solutions are often heated to increase the cleaning effect ID1. For example, in the case of N I-14(') H or lIC1, the temperature is about 80°C, and in the case of II2SO or the growth solvent nochlorobenzene, the temperature is about 120°C.
Heat to about C. Then, the chemical and moisture evaporate from the heated chemical cleaning tank 12A, and the inside of the cleaning chamber 14A including the chemical cleaning tank 12A becomes an atmosphere of the chemical.
このように、洗浄室１４Ａ内が薬液雰囲気となると、た
とえばＮ Ｈ、０１−１で洗浄した後１１Ｃ１で洗浄す
るというように異種の薬液で洗浄する必要がある場合、
両方の薬液の雰囲気同志が接触すると反応により塩が生
成してしまう等の問題があるので、各薬液について洗浄
室を１４Ａ、１４Ｂと別個側こしなければならない。し
かも、これら両洗浄室１４Ａ、１４Ｂ開を通してウェハ
キャリア１１を搬送する必要がある。したがって、両洗
浄室１４Ａ、１４Ｂ間の仕切り部１５は、ウェハキャリ
ア１１を微速可能でかつ雰囲気に関しては分離する必要
が生じ、ｊ−、トスライド式仕切り壁等の雰囲気分離装
置が必要になる。In this way, when the inside of the cleaning chamber 14A becomes a chemical atmosphere, if it is necessary to clean with different types of chemicals, for example, cleaning with NH, 01-1 and then cleaning with 11C1,
If the atmospheres of both chemical solutions come into contact with each other, there are problems such as the formation of salts due to reaction, so it is necessary to separate the cleaning chambers 14A and 14B for each chemical solution. Furthermore, it is necessary to transport the wafer carrier 11 through both of the cleaning chambers 14A and 14B. Therefore, the partition 15 between the two cleaning chambers 14A and 14B needs to be able to move the wafer carrier 11 at a very low speed and separate the atmosphere, and an atmosphere separation device such as a toslide type partition wall is required.
（発明が解決しようとする課題）
しかし、このように仕切り壁を設けるものはどうしても
その駆動装置等が大掛かりとなって寸法が大きくなり、
コストも高くならざるを得ない。(Problem to be solved by the invention) However, in the case where a partition wall is provided in this way, the driving device etc. for the partition wall are inevitably large-scale and the dimensions are large.
The cost also has to increase.
また、シリコンウェハのｉ１過に際して仕切り壁の開閉
の繰作も必要になる。Furthermore, it is necessary to repeatedly open and close the partition wall when the silicon wafer undergoes i1.
そこで、本発明はシリコンウェハ洗浄室間で仕切り壁を
用いず、しかもシリコンウェハの搬送が可能なまま薬液
雰囲気を分離で外る装置を提供する。Therefore, the present invention provides an apparatus that does not use a partition wall between silicon wafer cleaning chambers and separates the chemical atmosphere while allowing the transfer of silicon wafers.
（課題を解決するための手Ｆ！ｉ）
本発明は、シリコンウェハ洗浄室１１１ｊのイＪ：切り
部のシリコンウェハ搬送路の一方向側に線状気体噴出し
１を設け、これと対向する側に排気口を設け、シリコン
ウェハ搬送路を囲んで噴出口と鋳入１コとを結ぶ四方向
の側壁に噴出気体誘導枠を設けたことを特徴とする薬液
雰囲気分離装置である。(Measures for solving the problem F!i) The present invention provides a linear gas jet 1 on one side of the silicon wafer transport path at the cut portion of the silicon wafer cleaning chamber 111j, and This chemical atmosphere separation device is characterized in that an exhaust port is provided on the side, and ejected gas guide frames are provided on the side walls in four directions surrounding the silicon wafer conveyance path and connecting the ejection port and one casting pot.
（作用）
本発明では、シリコンウェハ洗浄室間の仕切り部のシリ
コンウェハ搬送路の一方向側に線状気体噴出口を設け、
気体を線状に噴出させることにより、シリコンウェハ搬
送路を横断する方向に気体の流動層を形成させて両洗浄
室を雰囲気的に分離する。噴出させる気体としては、Ｎ
２等の不活性〃スを用いるのが好ましい。(Function) In the present invention, a linear gas outlet is provided on one side of the silicon wafer transport path in the partition between the silicon wafer cleaning chambers,
By ejecting gas linearly, a fluidized layer of gas is formed in a direction across the silicon wafer transport path, and both cleaning chambers are atmospherically separated. The gas to be ejected is N
It is preferable to use an inert gas such as No. 2.
ただし、単に気体を線状に噴出させるだけでは噴出気体
が両洗浄室の雰囲気を巻き込みながら流れて対向する壁
面に衝突し、その後置洗浄室内へ流れ込むことになり、
結局両雰囲気が混合してしまうので、噴出させた気体は
排気することが必要である。そのため、気体噴出口と対
向する側にダ１気１」を設け、さらにシリコンウェハ搬
送路を囲んで噴出口と排気口とを結ぶ四方向の側壁、す
なわち上ド左右の側壁に噴出気体誘導枠を設けた。この
噴出気体誘導枠からダ［Ａｕを通して噴出気体は必ず室
外へ排気することにより、雰囲気の分離を完全にする。However, if the gas is simply ejected in a linear manner, the ejected gas will flow while involving the atmosphere of both cleaning chambers, collide with the opposing wall, and then flow into the subsequent cleaning chamber.
Since both atmospheres end up being mixed, it is necessary to exhaust the ejected gas. Therefore, a gas guide frame is provided on the side facing the gas outlet, and the side walls in four directions surrounding the silicon wafer conveyance path and connecting the outlet and the exhaust port, that is, the upper left and right side walls, are equipped with an ejected gas guiding frame. has been established. The ejected gas is always exhausted to the outside through the Au from the ejected gas guiding frame, thereby completely separating the atmosphere.
（実施例）
第１〜４図に本発明の薬液雰囲気分離装置の実施例を模
式的に示す。(Example) Figs. 1 to 4 schematically show an example of the chemical atmosphere separation device of the present invention.
第１図に示すように、雰囲気への洗浄室と雰囲気Ｂの洗
浄室とを結コζシリコンウェハ搬送路１の一方向側に線
状の気体噴出１コ２を設けである。このように気体噴出
口２は側方に設けるだけでなく、」二側あるいはＦ側に
設けることも可能である。また、この例では幅１＋ａｒ
ａ以内のスリットとしているが、丸いノズルを線状に並
べることも可能である。As shown in FIG. 1, a linear gas jet 1 and 2 are provided on one side of the silicon wafer transport path 1 to connect the cleaning chamber to the atmosphere and the cleaning chamber to the atmosphere B. In this way, the gas outlet 2 can be provided not only on the side, but also on the "2" side or the "F" side. Also, in this example, the width is 1+ar
Although the slit is within a length, it is also possible to arrange round nozzles in a line.
この例では、気体を線状にしかも均一に噴出させるため
に気体噴出口２の背後に風箱５を偏１えており、その詳
細を第２図に示す。気体供給管６から供給された気体を
そのまま噴出］」２から噴出させると、供給管６に近い
側は流速が速く、遠い側は流速が遅くなってしまう。そ
こで、風箱５を多数の穴９を有する分離板８により風箱
後室５Ａと風箱前室５Ｂに分け、気体は供給管６よりま
ず風箱後室５Ａに供給し、後室５Ａから分離板８の穴９
を通して風箱前室５Ｂに流し、その後噴出口２より噴出
させるとよい。In this example, a wind box 5 is placed behind the gas outlet 2 in order to eject the gas linearly and uniformly, the details of which are shown in FIG. If the gas supplied from the gas supply pipe 6 is directly ejected from the gas supply pipe 6, the flow velocity will be high on the side near the supply pipe 6, and slow on the side far from the supply pipe 6. Therefore, the wind box 5 is divided into a wind box rear chamber 5A and a wind box front chamber 5B by a separation plate 8 having many holes 9, and gas is first supplied to the wind box rear chamber 5A through the supply pipe 6, and then from the rear chamber 5A. Hole 9 of separation plate 8
It is preferable to flow the air through the wind box front chamber 5B and then blow it out from the spout 2.
第３図は水平断面図であるが、噴出気体誘導枠４は気体
噴出口２からＸ位置まで末広がりにし、その後排気口３
に向けて狭めている。実際のＮ法の一例として、シリコ
ンウェハ搬送路１の幅Ｘ−２００−３００ｍｍに対して
ａ＝ ３０＋ｎ＋ａ、 ｌ＋＝ ６０ｍｍとする。この
ようにして、噴出させた気体は全て排気する。FIG. 3 is a horizontal sectional view, and the ejected gas guide frame 4 is widened from the gas ejection port 2 to the X position, and then
It is narrowing towards. As an example of the actual N method, it is assumed that a=30+n+a and l+=60 mm for the width X-200-300 mm of the silicon wafer transport path 1. In this way, all the gas ejected is exhausted.
これに伴い両洗浄室内の雰囲気も排気されるが、これは
差し支えない。Along with this, the atmosphere in both cleaning chambers is also exhausted, but this is not a problem.
第４図は正面図であるが、噴出気体誘導枠４の幅は排気
に１３に近い側の１ｊ法を大きくしたほうが噴出気体を
確実に排気できる。そして、このように噴出気体により
雰囲気を分離しておき、シリコンウェハを搬送する必要
がある場合は搬送路１を通して搬送すればよく、特に仕
切り壁を動かす等の操作は不要である。Although FIG. 4 is a front view, the width of the ejected gas guide frame 4 should be increased by the 1j method on the side closer to the exhaust direction 13 to ensure evacuation of the ejected gas. Then, when the atmosphere is separated by the ejected gas in this way, and it is necessary to transport the silicon wafer, it is sufficient to transport it through the transport path 1, and there is no need for any particular operation such as moving the partition wall.
（発明の効果）
本発明は、洗浄室間の仕切り部分において仕切り壁を用
いることなく雰囲気を分離できる。したがって、仕切り
壁をスライドさせる場合等に比べると大掛かりな装置も
必要なく、小形でコストも安くてすむ。しかも、気体に
よる雰囲気分離であるから、シリコンウェハの搬送に際
しては単に搬送路を通過させればよく、特に仕切り壁を
スライドさせる等の操作は不要である。(Effects of the Invention) According to the present invention, the atmosphere can be separated without using a partition wall in the partition portion between the cleaning chambers. Therefore, compared to the case where a partition wall is slid, a large-scale device is not required, and the device is small and inexpensive. Moreover, since the atmosphere is separated by gas, the silicon wafer can be transported by simply passing it through the transport path, and there is no need to perform operations such as sliding a partition wall.
第１へ４図は本発明の薬液雰囲気分離装置を示す図で、
第１図は斜視図、ｔ５２図は風箱の部分を＝７
示す部分切断図、ｒｉＳ３図は水平断面図、第４図は正
面図て゛あり、ｔｊｓ ５図はシリコンウェハの洗浄」
−程を俣式的に示す図である。
１・・・シリコンウェハ搬送路、２・・・気体噴出１−
」、３・・・排気口、４・・・噴出気体誘導枠、５・・
・風箱、５Ａ・・・風箱後室、５Ｂ・・・風箱前室、６
・・・気体供給管、７・・・排気管、８・・・分離板、
９・・・穴、１（）・・・シリコンウェハ、１１・・・
１ンエハキヤ１ノア、１−２Ａ、ｊ２１３・・・薬液洗
浄箱、Ｊ ３ Ａ、１３１３・・・純水洗浄槽、１４Ａ
、１４Ｂ・・・洗浄室、１５・・・仕切り部。Figures 1 to 4 are diagrams showing the chemical atmosphere separation device of the present invention.
Figure 1 is a perspective view, Figure t52 is a partial cutaway showing the wind box part, Figure riS3 is a horizontal sectional view, Figure 4 is a front view, and Figure 5 is a cleaning of silicon wafers.
- It is a diagram showing the process in the Matata style. 1... Silicon wafer conveyance path, 2... Gas jet 1-
", 3...Exhaust port, 4...Blowout gas guide frame, 5...
・Wind box, 5A... Wind box rear chamber, 5B... Wind box front chamber, 6
... Gas supply pipe, 7 ... Exhaust pipe, 8 ... Separation plate,
9...hole, 1()...silicon wafer, 11...
1 Noah, 1-2A, j213... Chemical cleaning box, J 3 A, 1313... Pure water cleaning tank, 14A
, 14B... Washing room, 15... Partition section.
Claims (1)
ェハ搬送路の一方向側に線状気体噴出口を設け、これと
対向する側に排気口を設け、シリコンウェハ搬送路を囲
んで噴出口と排気口とを結ぶ四方向の側壁に噴出気体誘
導枠を設けたことを特徴とする薬液雰囲気分離装置。(1) A linear gas outlet is provided on one side of the silicon wafer transport path in the partition between the silicon wafer cleaning chambers, and an exhaust port is provided on the opposite side, and the air outlet and the air outlet surround the silicon wafer transport path. A chemical liquid atmosphere separation device characterized in that a blowout gas guiding frame is provided on the side walls in four directions connecting with the exhaust port.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27532090A JPH04151834A (en) | 1990-10-16 | 1990-10-16 | Chemical liquid atmosphere isolation equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP27532090A JPH04151834A (en) | 1990-10-16 | 1990-10-16 | Chemical liquid atmosphere isolation equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH04151834A true JPH04151834A (en) | 1992-05-25 |
Family
ID=17553806
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP27532090A Pending JPH04151834A (en) | 1990-10-16 | 1990-10-16 | Chemical liquid atmosphere isolation equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH04151834A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4332857A1 (en) * | 1992-09-25 | 1994-04-21 | Mitsubishi Electric Corp | Semiconductor wafer cleaning appts. associated with prod. cassette - handles wafers set upright in portable rack for mechanised transport between isopropyl alcohol cleaning and drying stations |
-
1990
- 1990-10-16 JP JP27532090A patent/JPH04151834A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4332857A1 (en) * | 1992-09-25 | 1994-04-21 | Mitsubishi Electric Corp | Semiconductor wafer cleaning appts. associated with prod. cassette - handles wafers set upright in portable rack for mechanised transport between isopropyl alcohol cleaning and drying stations |
| DE4332857C2 (en) * | 1992-09-25 | 1999-05-06 | Mitsubishi Electric Corp | Semiconductor cleaning device |
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