JPH0374362B2 - - Google Patents
Info
- Publication number
- JPH0374362B2 JPH0374362B2 JP58116140A JP11614083A JPH0374362B2 JP H0374362 B2 JPH0374362 B2 JP H0374362B2 JP 58116140 A JP58116140 A JP 58116140A JP 11614083 A JP11614083 A JP 11614083A JP H0374362 B2 JPH0374362 B2 JP H0374362B2
- Authority
- JP
- Japan
- Prior art keywords
- electron beam
- photoresist
- beam resist
- ion
- substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
Links
- 238000010894 electron beam technology Methods 0.000 claims description 24
- 229920002120 photoresistant polymer Polymers 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 11
- 238000000992 sputter etching Methods 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 8
- 238000010884 ion-beam technique Methods 0.000 claims description 6
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 2
- XKRFYHLGVUSROY-UHFFFAOYSA-N argon Substances [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
- 239000011248 coating agent Substances 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 5
- 239000004926 polymethyl methacrylate Substances 0.000 description 5
- 229910052786 argon Inorganic materials 0.000 description 4
- 239000011521 glass Substances 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 3
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- -1 argon ions Chemical class 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- JIGUQPWFLRLWPJ-UHFFFAOYSA-N Ethyl acrylate Chemical compound CCOC(=O)C=C JIGUQPWFLRLWPJ-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 230000001133 acceleration Effects 0.000 description 1
- 238000002508 contact lithography Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000004132 cross linking Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- SDIXRDNYIMOKSG-UHFFFAOYSA-L disodium methyl arsenate Chemical compound [Na+].[Na+].C[As]([O-])([O-])=O SDIXRDNYIMOKSG-UHFFFAOYSA-L 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- PNJWIWWMYCMZRO-UHFFFAOYSA-N pent‐4‐en‐2‐one Natural products CC(=O)CC=C PNJWIWWMYCMZRO-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/18—Diffraction gratings
- G02B5/1847—Manufacturing methods
- G02B5/1857—Manufacturing methods using exposure or etching means, e.g. holography, photolithography, exposure to electron or ion beams
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Diffracting Gratings Or Hologram Optical Elements (AREA)
Description
【発明の詳細な説明】
この発明は、分光器の波長分散素子やホログラ
ム素子として使われるブレーズド格子の製造方法
に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for manufacturing a blazed grating used as a wavelength dispersion element or hologram element in a spectrometer.
回折格子は、分光器の波長分散素子やホログラ
ム素子として種々の応用、例えばホログラフイツ
クスキヤナや、ホログラフイツクレンズ等がある
が、一般に回折効率が低く実用上問題である。ブ
レーズド格子は特定の回折次数へ理論上100％の
光を回折できる特徴があるが、格子溝の形状を制
御して製作しなければならないため製作が困難で
ある。現在最も現実的と思われるのは、あらかじ
め作つたレリーフ格子をシヤドウマスクとして基
板を斜め方向からイオンビームでイオンエツチン
グする方法である。この手法で現在知られている
のは、基板をガリウム砒素、又はガラス板上に塗
布したポリメチルメタクリレート（PMMA）と
したものであるが、前者は結晶であるため高価
で、又、不透明のため透過型格子にはできない欠
点がある。一方、後者は、ガラス板上に塗布した
PMMAを十分に乾燥しても、塗膜上にホトレジ
ストでレリーフ格子を形成する際にホトレジスト
の溶剤でPMMA膜が溶解し、相溶しやすいため、
レリーフ格子自体が良質なものができず、したが
つて良質なブレーズド格子が製作できない欠点が
あつた。 Diffraction gratings have various applications as wavelength dispersion elements in spectrometers and hologram elements, such as holographic scanners and holographic lenses, but they generally have low diffraction efficiency and are a practical problem. Blazed gratings have the characteristic of theoretically being able to diffract 100% of light into a specific diffraction order, but are difficult to manufacture because the shape of the grating grooves must be controlled. Currently, the most practical method is to ion-etch the substrate with an ion beam from an oblique direction using a relief grating prepared in advance as a shadow mask. Currently known methods for this method include using gallium arsenide as a substrate or polymethyl methacrylate (PMMA) coated on a glass plate, but the former is expensive because it is a crystal, and is opaque. There is a drawback that a transmission type grating cannot do. On the other hand, the latter was applied on a glass plate.
Even if the PMMA is sufficiently dried, when forming a relief grid with photoresist on the coating film, the PMMA film is easily dissolved by the photoresist solvent and becomes compatible.
The problem was that the relief grating itself could not be made of high quality, and therefore a high quality blazed grating could not be manufactured.
この発明の目的は、上述の欠点を除去した、透
過型の高品質のブレーズド格子の製造方法を提供
することにある。 The object of the invention is to provide a method for producing a high-quality blazed grating of the transmission type, which eliminates the above-mentioned drawbacks.
この発明のブレーズド格子の製造方法は、基板
にネガ型の電子線レジストを塗布する工程と、塗
布された前記電子線レジスト膜に電子線を照射す
る工程と、電子線を照射した前記電子線レジスト
膜に前記電子線レジストよりもイオンエツチング
速度の遅いホトレジストを塗布する工程と、塗布
されたホトレジスト膜をレリーフ型の回折格子に
形成する工程と、前記回折格子をシヤドウマスク
として、基板に対して斜め方向からイオンビーム
によつてイオンエツチングする工程とによつてブ
レーズド格子を製造する方法である。 The method for manufacturing a blazed grating of the present invention includes the steps of: applying a negative electron beam resist to a substrate; irradiating the applied electron beam resist film with an electron beam; and applying the electron beam resist to the applied electron beam resist. A step of applying a photoresist having a slower ion etching rate than the electron beam resist to the film, a step of forming the applied photoresist film into a relief-type diffraction grating, and a step of etching the photoresist in a diagonal direction with respect to the substrate using the diffraction grating as a shadow mask. In this method, a blazed grating is manufactured by a process of ion etching using an ion beam.
次に図面を参照して、この発明を詳細に説明す
る。 Next, the present invention will be described in detail with reference to the drawings.
第１図は、この発明の一実施例を、工程の順に
説明するための断面図である。第１図ａは、基板
１上にネガ型の電子線レジスト２を塗布した状態
を示す断面図である。基板としては、ガラス板及
びアクリル板を用いた。ネガ型の電子線レジスト
としては種々実験した結果、イオンエツチング速
度の早いソマール工業製のSEL−ＮタイプＡを用
いた。SEL−ＮタイプＡはメタクリルグリシジル
とアクリル酸エチルの共重合体である。イオンエ
ツチング速度は1mA／cm2のアルゴンイオンに対
し660Å／分であつた。基板にはスピナーで回転
塗布した。塗布厚は約1μｍである。その後、ガ
ラス基板の時は80℃で30分間焼きしめを行なつ
た。アクリル板の時は50℃で60分間焼きしめを行
なつた。次にこの電子線レジストに電子線を全面
照射して、架橋反応によつて硬化させた。電子線
の照射量は、約10-6クーロン／cm2で加速電圧は約
30KeVとした。電子線の照射によつて、電子線
レジスト膜２は、次の工程で塗布されるホトレジ
ストの溶剤に対して不溶になり、PMMAの場合
に行つたホトレジストとの相溶を生じない。第１
図ｂは、電子線照射した電子線レジスト膜２の上
にホトレジスト３を塗布した状態を示す断面図で
ある。ホトレジストとしてはシプレー社製AZ−
1350Jを使用した。イオンエツチング速度は
1mA／cm2のアルゴンイオンに対し300Å／分であ
つた。電子線レジスト膜上にはスピナーで回転塗
布した。焼きしめは、電子線レジストと同じ条件
で行なつた。塗布厚は、次に形成する格子のピツ
チにより異なり0.3μｍ〜1μｍとした。次に、ホト
レジスト膜にレリーフ格子を形成するために、
He−Cdレーザを光源とする干渉計で干渉縞をホ
トレジスト膜に露光し、現像液で現像した。第１
図ｃは、現像後の状態を示す断面図である。レー
ザ干渉計を用いるかわりに乳剤マスクを用いて密
着焼付によつても第１図ｃに示すようなレリーフ
格子を形成できる。次に、第１図ｃに示すような
試料をイオンエツチング装置を用いて、斜め入射
のアルゴンイオンビームでイオンエツチングし
た。第１図ｄは、イオンエツチングを途中で中断
した装置を示す。さらにイオンエツチングを進め
ると、第１図ｅに示すようなブレーズド格子が得
られる。アルゴンイオンビームとしては、加速電
圧300〜700V、イオン電流密度0.3〜0.7mA／cm2
で行なつた。 FIG. 1 is a sectional view for explaining an embodiment of the present invention in the order of steps. FIG. 1a is a sectional view showing a state in which a negative type electron beam resist 2 is coated on a substrate 1. As shown in FIG. A glass plate and an acrylic plate were used as the substrate. As a result of various experiments, SEL-N type A manufactured by Somar Kogyo Co., Ltd., which has a high ion etching speed, was used as the negative type electron beam resist. SEL-N Type A is a copolymer of methacrylic glycidyl and ethyl acrylate. The ion etching rate was 660 Å/min for argon ions at 1 mA/cm 2 . The coating was applied to the substrate using a spinner. The coating thickness is approximately 1 μm. After that, in the case of a glass substrate, it was baked at 80°C for 30 minutes. For acrylic plates, we baked them at 50℃ for 60 minutes. Next, the entire surface of this electron beam resist was irradiated with an electron beam to cure it by a crosslinking reaction. The electron beam irradiation dose is approximately 10 -6 coulombs/cm 2 and the accelerating voltage is approximately
It was set to 30KeV. By irradiating the electron beam, the electron beam resist film 2 becomes insoluble in the solvent of the photoresist applied in the next step, and does not become compatible with the photoresist as in the case of PMMA. 1st
FIG. b is a cross-sectional view showing a state in which a photoresist 3 is applied on the electron beam resist film 2 that has been irradiated with an electron beam. As a photoresist, AZ- manufactured by Shipley
1350J was used. The ion etching speed is
It was 300 Å/min for 1 mA/cm 2 of argon ion. The coating was applied onto the electron beam resist film using a spinner. Baking was performed under the same conditions as for electron beam resist. The coating thickness varied depending on the pitch of the grid to be formed next and was 0.3 μm to 1 μm. Next, to form a relief grating on the photoresist film,
Interference fringes were exposed on the photoresist film using an interferometer using a He-Cd laser as a light source, and developed with a developer. 1st
Figure c is a sectional view showing the state after development. Instead of using a laser interferometer, a relief grating as shown in FIG. 1c can also be formed by contact printing using an emulsion mask. Next, the sample shown in FIG. 1c was ion-etched using an ion etching apparatus with an obliquely incident argon ion beam. FIG. 1d shows an apparatus in which ion etching is interrupted midway through. Further ion etching yields a blazed grating as shown in FIG. 1e. For the argon ion beam, the acceleration voltage is 300 to 700V, and the ion current density is 0.3 to 0.7mA/ cm2.
I did it at
以上、述べた様に本発明により、透過型の高品
質のブレーズド格子が得られる。 As described above, according to the present invention, a transmission type blazed grating of high quality can be obtained.
第１図は、この発明の工程をａ〜ｅの順に示す
断面図である。
図において、１は基板、２はネガ型電子線レジ
スト、３はホトレジストを各々表わす。
FIG. 1 is a sectional view showing the steps of the present invention in the order of a to e. In the figure, 1 represents a substrate, 2 represents a negative electron beam resist, and 3 represents a photoresist.
Claims (1)
程と、塗布された前記電子線レジスト膜に電子線
を照射する工程と、電子線を照射した前記電子線
レジスト膜に前記電子線レジストよりもイオンエ
ツチング速度の遅いホトレジストを塗布する工程
と、塗布されたホトレジスト膜をレリーフ型の回
折格子に形成する工程と、前記回折格子をシヤド
ウマスクとして、基板に対して斜め方向からイオ
ンビームによつてイオンエツチングする工程とを
含むことを特徴とするブレーズド格子の製造方
法。1. A step of applying a negative type electron beam resist to a substrate, a step of irradiating the applied electron beam resist film with an electron beam, and a step of applying an ion beam to the electron beam resist film irradiated with the electron beam than the electron beam resist. A step of applying a photoresist with a slow etching speed, a step of forming the applied photoresist film into a relief type diffraction grating, and ion etching with an ion beam from an oblique direction to the substrate using the diffraction grating as a shadow mask. A method for manufacturing a blazed lattice, comprising the steps of:
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11614083A JPS608802A (en) | 1983-06-29 | 1983-06-29 | Manufacture of blazed grating |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11614083A JPS608802A (en) | 1983-06-29 | 1983-06-29 | Manufacture of blazed grating |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS608802A JPS608802A (en) | 1985-01-17 |
| JPH0374362B2 true JPH0374362B2 (en) | 1991-11-26 |
Family
ID=14679726
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11614083A Granted JPS608802A (en) | 1983-06-29 | 1983-06-29 | Manufacture of blazed grating |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS608802A (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0333304Y2 (en) * | 1985-10-14 | 1991-07-15 | ||
| JPS62179404A (en) * | 1986-02-01 | 1987-08-06 | 雪ケ谷化学工業株式会社 | Applicator for consmetics |
| AUPR483301A0 (en) * | 2001-05-08 | 2001-05-31 | Commonwealth Scientific And Industrial Research Organisation | An optical device and methods of manufacture |
| DE102009056934A1 (en) | 2009-12-04 | 2011-06-09 | Giesecke & Devrient Gmbh | Security element, value document with such a security element and manufacturing method of a security element |
| DE102010047250A1 (en) | 2009-12-04 | 2011-06-09 | Giesecke & Devrient Gmbh | Security element, value document with such a security element and manufacturing method of a security element |
| DE102011108242A1 (en) | 2011-07-21 | 2013-01-24 | Giesecke & Devrient Gmbh | Optically variable element, in particular security element |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55157705A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | Production of blazed grating |
| JPS5643620A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Production of blazed grating |
| JPS56113108A (en) * | 1980-02-12 | 1981-09-05 | Rikagaku Kenkyusho | Preparation for echelette grating |
-
1983
- 1983-06-29 JP JP11614083A patent/JPS608802A/en active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55157705A (en) * | 1979-05-29 | 1980-12-08 | Nec Corp | Production of blazed grating |
| JPS5643620A (en) * | 1979-09-17 | 1981-04-22 | Mitsubishi Electric Corp | Production of blazed grating |
| JPS56113108A (en) * | 1980-02-12 | 1981-09-05 | Rikagaku Kenkyusho | Preparation for echelette grating |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS608802A (en) | 1985-01-17 |
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