JPH02297737A - Optical recording medium - Google Patents
Optical recording mediumInfo
- Publication number
- JPH02297737A JPH02297737A JP11985589A JP11985589A JPH02297737A JP H02297737 A JPH02297737 A JP H02297737A JP 11985589 A JP11985589 A JP 11985589A JP 11985589 A JP11985589 A JP 11985589A JP H02297737 A JPH02297737 A JP H02297737A
- Authority
- JP
- Japan
- Prior art keywords
- optical recording
- recording medium
- layer
- metal reflective
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims description 56
- 229910052751 metal Inorganic materials 0.000 claims abstract description 64
- 239000002184 metal Substances 0.000 claims abstract description 64
- 239000010409 thin film Substances 0.000 claims abstract description 25
- 239000010408 film Substances 0.000 claims abstract description 20
- 239000007789 gas Substances 0.000 claims abstract description 20
- 239000011261 inert gas Substances 0.000 claims abstract description 15
- 238000004544 sputter deposition Methods 0.000 claims abstract description 10
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 claims description 79
- 239000011241 protective layer Substances 0.000 claims description 24
- 239000000758 substrate Substances 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 230000007547 defect Effects 0.000 abstract description 15
- 230000007797 corrosion Effects 0.000 abstract description 13
- 238000005260 corrosion Methods 0.000 abstract description 13
- 230000035945 sensitivity Effects 0.000 abstract description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052760 oxygen Inorganic materials 0.000 abstract description 4
- 239000001301 oxygen Substances 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 13
- 239000011347 resin Substances 0.000 description 11
- 229920005989 resin Polymers 0.000 description 11
- 239000004417 polycarbonate Substances 0.000 description 9
- 229920000515 polycarbonate Polymers 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000001771 vacuum deposition Methods 0.000 description 6
- 229910045601 alloy Inorganic materials 0.000 description 5
- 239000000956 alloy Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000004831 Hot glue Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 2
- 230000005374 Kerr effect Effects 0.000 description 2
- 229910004205 SiNX Inorganic materials 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 239000000975 dye Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- QIVUCLWGARAQIO-OLIXTKCUSA-N (3s)-n-[(3s,5s,6r)-6-methyl-2-oxo-1-(2,2,2-trifluoroethyl)-5-(2,3,6-trifluorophenyl)piperidin-3-yl]-2-oxospiro[1h-pyrrolo[2,3-b]pyridine-3,6'-5,7-dihydrocyclopenta[b]pyridine]-3'-carboxamide Chemical compound C1([C@H]2[C@H](N(C(=O)[C@@H](NC(=O)C=3C=C4C[C@]5(CC4=NC=3)C3=CC=CN=C3NC5=O)C2)CC(F)(F)F)C)=C(F)C=CC(F)=C1F QIVUCLWGARAQIO-OLIXTKCUSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- 229910001007 Tl alloy Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000002178 crystalline material Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 230000005381 magnetic domain Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 229910052748 manganese Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 230000009993 protective function Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 150000002910 rare earth metals Chemical class 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 150000003568 thioethers Chemical class 0.000 description 1
- 229910052723 transition metal Inorganic materials 0.000 description 1
- 150000003624 transition metals Chemical class 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
- Manufacturing Optical Record Carriers (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、光記録媒体に関し、特に、透明基板上に金属
反射層を有する光記録媒体の保存耐久性の改良に関する
。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to an optical recording medium, and particularly to improving the storage durability of an optical recording medium having a metal reflective layer on a transparent substrate.
(従来技術及びその問題点〕
近年、光記録媒体は、レーザー光による読み出し可能な
媒体として大容量データファイル等に広く利用されてい
る。(Prior Art and its Problems) In recent years, optical recording media have been widely used for large-capacity data files and the like as media readable by laser light.
前記光記録媒体には、ビデオディスク、コンパクトディ
スク、CD−ROM等の再生のみを行う、いわゆる、R
OM型媒体、追記ができるWO型型体体もしくは書き換
えが自在にできる光磁気型、相変化型媒体がある。The optical recording medium is a so-called R media that only plays back video discs, compact discs, CD-ROMs, etc.
There are OM type media, WO type media that can be written once, magneto-optical media that can be freely rewritten, and phase change media.
ROM型媒体では、情報は射出成形時にプレピットとし
て、基板に形成されており、この基板上に再生用の光を
反射させるために金属反jI′I層の薄膜が形成されて
いる。In a ROM type medium, information is formed as prepits on a substrate during injection molding, and a thin film of a metal dielectric layer is formed on this substrate to reflect light for reproduction.
WO型型体体は、レーザー光照射により光透過/反射率
特性が変化することを利用して情報の記録再生を行う。The WO type body records and reproduces information by utilizing changes in light transmission/reflectance characteristics due to laser beam irradiation.
また、書き換えが自在にできる光磁気型媒体では、情報
を垂直ζn化膜の磁区を熱磁気反転させることで情報を
記録し、カー効果により情報を再生する。相変化型媒体
では、結晶層と非晶質層の光透過/反射率特性の変化を
利用して情報の記録再生を行う。In addition, in a magneto-optical medium that can be freely rewritten, information is recorded by thermomagnetic reversal of the magnetic domains of a vertical ζn film, and information is reproduced by the Kerr effect. In phase change media, information is recorded and reproduced using changes in the light transmission/reflectance characteristics of the crystal layer and the amorphous layer.
また、光記録媒体の形状は、基板上に光記録層、保護層
等を設け、そのまま単板で使用される片面記録型のハン
パクトディスク系統の媒体、3.5インチ光磁気ディス
ク等とそれら媒体を接着剤を介して2枚貼り合わせて使
用される両面記録型の一部のWO型型体体光磁気型媒体
、相変化型媒体等がある。In addition, the shape of the optical recording medium includes a single-sided recording type humpact disk type medium that has an optical recording layer, a protective layer, etc. on the substrate and is used as a single disk, a 3.5-inch magneto-optical disk, etc. There are some double-sided recording type media used by bonding two media together with an adhesive, some WO type magneto-optical media, phase change media, and the like.
以上の光記録媒体に共通して要求されることに、再生を
レーザー光で行うゆえにある程度の反射率を持たねばな
らぬということがある。この要求を満足させるために、
前記ROM型媒体では、金属反射層の薄膜が使用され、
WO型型体体おいても色素系の記録層を用いるものでは
勿論のこと、金属系の記録層を用いるものでも適当な反
射率を得るために、また信号品質の改良ためにも金属反
射層を設けている。A common requirement of the above optical recording media is that they must have a certain degree of reflectance because reproduction is performed using laser light. In order to satisfy this requirement,
In said ROM type media, a thin film of metallic reflective layer is used;
In the WO type body, not only those using a dye-based recording layer but also those using a metal recording layer have a metal reflective layer in order to obtain an appropriate reflectance and improve signal quality. has been established.
光磁気型媒体においても、読み出し時の信号品質を良化
するためにも金属反射層を用いている。Magneto-optical media also use metal reflective layers to improve signal quality during readout.
光記録媒体に使用される前記金属反射層の材料としては
、光反射率が高いことが重要であり、Au、Ag、Al
(アルミニウム)等が使用されている。It is important that the material of the metal reflective layer used in the optical recording medium has high light reflectance, and Au, Ag, Al
(aluminum) etc. are used.
なかでも、Alは、コストの面から幅広く使用され、ス
パンタ法、真空蒸着法等の真空成膜法による薄膜の形態
で記録層、保護層等と共に基板上に成膜される。Among them, Al is widely used from the viewpoint of cost, and is formed on a substrate together with a recording layer, a protective layer, etc. in the form of a thin film by a vacuum film forming method such as a spunter method or a vacuum evaporation method.
しかしながら、Alの金属反射層の問題点として、耐久
性が低いということがある。However, a problem with Al metal reflective layers is that they have low durability.
即ち、特に、比較的腐食され易く経時により、反射率が
低下したりして光記録媒体の特性の劣化をもたらす。That is, in particular, it is relatively easy to corrode, and as time passes, the reflectance decreases, resulting in deterioration of the characteristics of the optical recording medium.
この問題を改良するために、例えば、特開昭62−13
7743号公報、特開昭63−224049号公報、特
開昭63−224050号公報に開示されているように
、Al中にTi、、Se、Ag等の金属を添加して、成
膜された金属反射層の薄膜の耐腐食性を高めようとする
方法が提案されている。In order to improve this problem, for example,
As disclosed in JP-A No. 7743, JP-A-63-224049, and JP-A-63-224050, a film was formed by adding metals such as Ti, Se, and Ag to Al. Methods have been proposed to increase the corrosion resistance of thin metal reflective layers.
そして、この方法は、酸化等による腐食には、ある程度
効果があった。This method was somewhat effective against corrosion caused by oxidation and the like.
しかしながら、前記特開昭62−137743号公報に
も開示されているような結晶化によると思われるTjl
膜の局部的な変形をともなったH41loc (ヒロン
ク)と呼ばれる変形欠陥の防止には不十分であり、さら
に片面記録型の媒体をホントメルト接着剤で2枚貼り合
わせた前記の両面記録型光記録媒体では、高温高湿下で
長期間保存した場合、前記Hillocとも異なる覆い
凹凸の変形欠陥がみられ、このような変形欠陥まで防止
する手段はなかった。However, Tjl seems to be due to crystallization as disclosed in JP-A-62-137743.
It is insufficient to prevent the deformation defect called H41loc, which is accompanied by local deformation of the film. When the medium is stored for a long period of time under high temperature and high humidity, deformation defects of cover irregularities, which are different from those of the Hilloc, are observed, and there is no means to prevent such deformation defects.
また、金属反射層の成膜方法の工夫による金属反射層の
腐食、欠陥を防止する方法は未だ提案されていない。Further, no method has yet been proposed for preventing corrosion and defects in the metal reflective layer by devising a method for forming the metal reflective layer.
前記の金属反射層の腐食や変形欠陥は、使用や保存して
いるうちに、ノイズの増加、BER(ピットエラーレー
ト)の増大やフェーズマージンの減少を引き起こし光記
録媒体の実用上重大な問題であった。Corrosion and deformation defects in the metal reflective layer described above cause an increase in noise, an increase in BER (pit error rate), and a decrease in phase margin during use and storage, which is a serious problem for the practical use of optical recording media. there were.
〔発明が解決しようとする問題点]
本発明は、前記の従来技術の問題点に鑑みなされたもの
であり、特にAlを主体とする金属反射層の腐食や変形
欠陥を防止することによって、記録感度や信号品質に優
れ、経時安定性、保存安定性の優れた光記録媒体を提供
することを目的とする。[Problems to be Solved by the Invention] The present invention has been made in view of the problems of the prior art described above. In particular, by preventing corrosion and deformation defects of a metal reflective layer mainly composed of Al, recording The purpose of the present invention is to provide an optical recording medium with excellent sensitivity and signal quality, and excellent stability over time and storage stability.
前記本発明の目的は、透明基板」二に、Al(アルミニ
ウム)を主体とする金属反射層の薄膜を有する光記録媒
体において、該金属反射層は、10層↑orr以上のガ
ス圧となるまで不活性ガスを導入した条件下でAlを主
体とする金属をスパッターすることにより成膜された薄
膜であることを特徴とする光記録媒体により達成される
。The object of the present invention is to provide an optical recording medium having a thin film of a metal reflective layer mainly made of Al (aluminum) on a transparent substrate, in which the metal reflective layer is formed until a gas pressure of 10 layers↑orr or more is reached. This is achieved by an optical recording medium characterized in that it is a thin film formed by sputtering a metal mainly composed of Al under conditions where an inert gas is introduced.
本発明の光記録媒体においては、Alを主体とする金属
反射層のIs膜を有しているので、添加元素量のコント
ロールにより熱伝導率が制御できるので記録感度が良好
な媒体を得ることができる。Since the optical recording medium of the present invention has an Is film which is a metal reflective layer mainly composed of Al, the thermal conductivity can be controlled by controlling the amount of added elements, so it is possible to obtain a medium with good recording sensitivity. can.
また、光記録媒体が光磁気記録媒体である場合、記録層
をriI膜化してカー効果とファラデー効果をともに利
用することにより信号品質を優れたものとすることがで
きる。Further, when the optical recording medium is a magneto-optical recording medium, excellent signal quality can be achieved by forming the recording layer into an riI film and utilizing both the Kerr effect and the Faraday effect.
さらに、真空成膜室内に不活性ガスをガス圧が10ta
Torr以上となってから前記金属反射層の薄膜を成
膜することによって、耐腐食性に優れ、特に1lill
ocや両面記録型光記録媒体を作成する際のホントメル
ト接着剤の使用に伴う特有の緩い凹凸等の変形欠陥を防
止し、経時や保存中にノイズ、BER,フェーズマージ
ン等の点で劣化のほとんどない光記録媒体を得るこ七が
できる。不活性ガズとしては、Ar、 Fle、Ne、
Krなどを使用することができる。Furthermore, an inert gas was introduced into the vacuum film forming chamber at a gas pressure of 10 ta.
By forming the thin film of the metal reflective layer after the temperature reaches Torr or higher, excellent corrosion resistance can be obtained, especially when the
It prevents deformation defects such as loose irregularities that are characteristic of the use of real-melt adhesives when creating OCs and double-sided recording type optical recording media, and prevents deterioration in terms of noise, BER, phase margin, etc. over time and during storage. It is possible to obtain almost no optical recording media. Inert gases include Ar, Fle, Ne,
Kr etc. can be used.
本発明の光記録媒体における金属反射層の腐食や変形欠
陥に対する前記の利点は、スパッタ法等でAlを主体と
する金属反射層のy1膜の成膜条件によりもたらされる
ものである。The above-mentioned advantages against corrosion and deformation defects of the metal reflective layer in the optical recording medium of the present invention are brought about by the conditions for forming the y1 film of the metal reflective layer mainly composed of Al by sputtering or the like.
すなわち、ガス圧がある程度大きくなると成膜された薄
膜中に取り込まれるガス分子が多くなり、不活性ガスガ
スと共に真空成膜室内に残存していた水や酸素も、極微
量薄膜中に取り込まれ、その水や酸素がIF膜内に均一
に分布し且つAlを不活性化して、金属反射層の薄膜を
化学的に安定化する為ではないかと推定される。In other words, when the gas pressure increases to a certain extent, more gas molecules are incorporated into the thin film formed, and a trace amount of water and oxygen remaining in the vacuum deposition chamber along with the inert gas are also incorporated into the thin film. It is presumed that this is because water and oxygen uniformly distribute within the IF film and inactivate Al, thereby chemically stabilizing the thin film of the metal reflective layer.
本発明の光記録媒体におけるAlを主体とする金属反射
層の薄膜の成膜時の不活性ガスガス圧は、l Ql T
orr以上であり、特に望ましくは、10mTorr乃
至2011Torrである。In the optical recording medium of the present invention, the inert gas pressure when forming the thin film of the metal reflective layer mainly composed of Al is l Ql T
or more, and particularly preferably from 10 mTorr to 2011 Torr.
前記不活性ガスガス圧が、I Om Torr未満であ
ると金属反射層に対する前記の耐腐食性、特に、変性欠
陥防止の効果が低下する。また、前記不活性ガスガス圧
があまり大きくなると、Alを主体とする金属反射層中
への不活性ガスの取り込みが多くなって、薄膜の緻密さ
が失われるので、不活性ガスガス圧としては、3 X
1 (I” Torr以下にするのが望ましい。If the inert gas pressure is less than I Om Torr, the corrosion resistance of the metal reflective layer, particularly the effect of preventing modification defects, will be reduced. Furthermore, if the inert gas pressure becomes too large, a large amount of inert gas will be incorporated into the metal reflective layer mainly composed of Al, and the density of the thin film will be lost. X
1 (I” Torr or less).
特に、本発明の光記録媒体の前記利点はホットメルト接
着剤を用いた両面記録型光記録媒体の場合にしばしば発
生する緩い凹凸の変形欠陥の防止に顕著に現れる。In particular, the above-mentioned advantage of the optical recording medium of the present invention is manifested in the prevention of deformation defects of gentle irregularities that often occur in double-sided recording type optical recording media using hot melt adhesives.
一本発明の光記録媒体の前記金属反射層は、通常真空成
膜法により形成され、一般にはスパッタ法や真空蒸着法
が採用される。The metal reflective layer of the optical recording medium of the present invention is usually formed by a vacuum film forming method, and generally a sputtering method or a vacuum evaporation method is employed.
例えば、スパッタ法であれば、RFやDC電力を投入し
て行うマグネトロンスパッタ法が望ましく、真空蒸着法
では、EBガンによる加熱方式の蒸着法が望ましい。For example, a sputtering method is preferably a magnetron sputtering method using RF or DC power, and a vacuum evaporation method is preferably a heating method using an EB gun.
本発明の光記録媒体の前記の利点は、金属反射層が2N
以上の高純度のAlである場合、特に大きい。The above-mentioned advantage of the optical recording medium of the present invention is that the metal reflective layer is 2N
It is particularly large when Al has a purity higher than that.
Alに各種の金属が含有された合金であっても前記の利
点が大きいことは変わらないが、Alが90原子%以上
、望ましくは99,9乃至95原子%である合金である
と、反射率の大幅な低下を伴わずに、耐腐食性、耐変形
欠陥を高められるので好ましい。Even if the alloy contains various metals in Al, the above-mentioned advantages are still great, but if the alloy contains Al at 90 atomic % or more, preferably 99.9 to 95 atomic %, the reflectance will increase. This is preferable because corrosion resistance and deformation defect resistance can be improved without a significant decrease in .
特に、本発明の光記録媒体が光磁気記録媒体である場合
、金属反射層の熱伝導率は記録感度に影響を与えるので
、Al単一成分よりもAlとTa。In particular, when the optical recording medium of the present invention is a magneto-optical recording medium, the thermal conductivity of the metal reflective layer affects the recording sensitivity, so it is preferable to use Al and Ta as a single component rather than Al as a single component.
Nb、Cr、Yi、Zr、In、Mn、Ni。Nb, Cr, Yi, Zr, In, Mn, Ni.
Mg、P、V、W、PC,Au、Ag、Cu等のなかか
ら選ばれる少なくとも一種よりなる金属との合金である
方が望ましい。An alloy with at least one metal selected from Mg, P, V, W, PC, Au, Ag, Cu, etc. is preferable.
本発明の光記録媒体における前記金属反射層の薄膜の膜
厚には、本発明の構成からくる特有な制限はなく、通常
採用されている膜厚でよい。The thickness of the thin metal reflective layer in the optical recording medium of the present invention is not particularly limited by the structure of the present invention, and may be any commonly used thickness.
例えば、本発明の光記録媒体が光磁気記録媒体であれば
、前記金属反射層のWA厚は、通常、200乃至200
0人の範囲にあれば良い。For example, if the optical recording medium of the present invention is a magneto-optical recording medium, the WA thickness of the metal reflective layer is usually 200 to 200 mm.
It is good if it is within the range of 0 people.
本発明の光記録媒体の前記金属反射層と積層する他の層
の薄膜の構成、材料、膜厚等においても本発明の構成か
らと(に制限を受けることはない。The structure, material, film thickness, etc. of the thin film of the other layer laminated with the metal reflective layer of the optical recording medium of the present invention are not limited to the structure of the present invention.
本発明の光記録媒体が、反射タイプの光ディスクである
場合は、前記金属反射層はグループ溝のある基板の表面
に直接成膜される。When the optical recording medium of the present invention is a reflective type optical disc, the metal reflective layer is directly formed on the surface of the substrate having the group grooves.
また、WO型の媒体や光磁気記録媒体である場合は、記
録層や誘電耐保護層が積層されて成膜された最上層に成
膜される。そして、両面記録型の光磁気記録媒体である
場合は、前記金属反射層の上にさらに紫外線硬化樹脂等
の有機樹脂保護層を設けられることがある。前記有機樹
脂保護層があっても本発明の光記録媒体の前記の特徴、
利点は失われていないことは勿論である。Further, in the case of a WO type medium or a magneto-optical recording medium, a recording layer and a dielectric protective layer are formed on the top layer of a stacked film. In the case of a double-sided recording type magneto-optical recording medium, an organic resin protective layer such as an ultraviolet curable resin may be further provided on the metal reflective layer. Even with the organic resin protective layer, the above characteristics of the optical recording medium of the present invention,
Of course, the advantages are not lost.
従って、両面記録型光磁気記録媒体の場合、前記ホット
メルト接着剤が前記金属反射層の上に直接、もしくは前
記有機樹脂保護層の上面に塗布され2枚の光(ff気記
録媒体が前記基板を外側に向け、前記金属反射層を内側
に向けて貼り合わされる。Therefore, in the case of a double-sided recording type magneto-optical recording medium, the hot melt adhesive is coated directly on the metal reflective layer or on the top surface of the organic resin protective layer, and the two sheets of light (ff) are coated on the substrate. are bonded together with the metal reflective layer facing outside and the metal reflective layer facing inside.
その際、使用されるホットメルト接着剤としては、合成
ゴム系、EVA系、アクリル系、ポリアミド系の樹脂等
がある。In this case, hot melt adhesives used include synthetic rubber-based, EVA-based, acrylic-based, and polyamide-based resins.
本発明の光記録媒体で使用する基板の材質としては、ポ
リカーボネート、ポリメチルメタクリレート、エポキシ
、ガラス等であるが、本発明の光記録媒体の特徴が最も
効果的に現れるのがポリカーボネート、ポリメチルメタ
クリレート、エポキシ等の樹脂基板である。Materials for the substrate used in the optical recording medium of the present invention include polycarbonate, polymethyl methacrylate, epoxy, glass, etc., but polycarbonate and polymethyl methacrylate exhibit the characteristics of the optical recording medium of the present invention most effectively. , a resin substrate such as epoxy.
前記樹脂基板の中でもポリカーボネート基板は、吸水率
が小さく、ガラス転移点が高い等の利点を有し、本発明
の光記録媒体においても使用することが好ましい。Among the resin substrates, polycarbonate substrates have advantages such as low water absorption and high glass transition temperature, and are preferably used in the optical recording medium of the present invention.
本発明において前記光記録媒体が光磁気記録媒体である
場合記録層としては各種の酸化物及び金属の磁性体の薄
膜が使用できる。例えば、MnB1゜MuAlCe、M
ncuBi等の結晶性材料、Cd IG、B1SmEr
Ga IG、B1SmYbCoGe1C,等の単結晶材
料、さらに、GdCo、GdFe、TbFe、DyFe
、C;dFeBi。In the present invention, when the optical recording medium is a magneto-optical recording medium, thin films of various oxides and metals can be used as the recording layer. For example, MnB1゜MuAlCe, M
Crystalline materials such as ncuBi, Cd IG, B1SmEr
Single crystal materials such as Ga IG, B1SmYbCoGe1C, as well as GdCo, GdFe, TbFe, DyFe
, C; dFeBi.
CdTbFe、GdFeCo、TbFeCo等の非晶質
材料を用いた薄膜である。中でも感度、C/N等の点で
希土類金属、遷移金属を主体とする記録層が最も好まし
い。This is a thin film using an amorphous material such as CdTbFe, GdFeCo, or TbFeCo. Among these, a recording layer mainly composed of rare earth metals or transition metals is most preferable in terms of sensitivity, C/N, etc.
また、本発明において前記光記録媒体が相変化型記録媒
体である場合の記録層としては、Te系及び非Te系の
各種の合金もしくは色素が使用される。Further, in the present invention, when the optical recording medium is a phase change type recording medium, various Te-based and non-Te-based alloys or dyes are used as the recording layer.
本発明において光記録媒体が光磁気記録媒体である場合
、前述した記録層に隣接させて例えば記録層の上下をサ
ンドインチする構成で誘電体保護そう薄膜を設け、その
上に金属反射層を形成するのが最もC/Nが高い媒体が
得られる。そして本発明で用いることができる前記誘電
体保護層とてては、例えば、SiOx、SiNx、Al
Nx及びZnS等の酸化物、窒化物及び硫化物等の誘電
体が好ましい、中でも光学的特性、保護機能の面から例
えば特開昭59−121368号公報に開示されている
ように窒化セイ素が最も好ましい。In the present invention, when the optical recording medium is a magneto-optical recording medium, a dielectric protective thin film is provided adjacent to the above-mentioned recording layer, for example, by sandwiching the top and bottom of the recording layer, and a metal reflective layer is formed thereon. By doing so, a medium with the highest C/N can be obtained. The dielectric protective layer that can be used in the present invention is, for example, SiOx, SiNx, Al
Dielectric materials such as oxides, nitrides, and sulfides such as Nx and ZnS are preferable. Among them, silicon nitride is preferable from the viewpoint of optical properties and protective function, as disclosed in JP-A-59-121368. Most preferred.
本発明において光記録媒体が光磁気記録媒体である場合
、前記記録層の厚さは、通常150乃至500人であり
、また前記誘電体保護層の厚さは通常200乃至200
0人である。In the present invention, when the optical recording medium is a magneto-optical recording medium, the thickness of the recording layer is usually 150 to 500 mm, and the thickness of the dielectric protective layer is usually 200 to 200 mm.
There are 0 people.
第1誘電第保護層としては、300乃至1500人、第
2誘電体保護層としては、100乃至600人であるこ
とが望ましい。It is preferable that the first dielectric protective layer has a capacity of 300 to 1,500 people, and the second dielectric protective layer has a capacity of 100 to 600 people.
前記の光磁気記録媒体において前記基板上に設けられる
各層は、真空成膜法で成膜され、通常スパッタ法で成膜
される。Each layer provided on the substrate in the magneto-optical recording medium is formed by a vacuum film forming method, and usually by a sputtering method.
光記録媒体の金属反射層を成膜する際、不活性ガスガス
圧を10n Torr以上と比較的大きくすることによ
り、得られる光記録媒体の前記金属反射層の耐腐食性を
向上させ、変形欠陥を防止して経時安定性、保存安定性
を高めることができる。特に、ホットメルト接着剤を用
いた両面記録型光記録媒体特有の緩い凹凸よりなる変形
欠陥が発生し難くできる。When forming the metal reflective layer of the optical recording medium, by increasing the inert gas pressure to a relatively high level of 10 n Torr or more, the corrosion resistance of the metal reflective layer of the resulting optical recording medium is improved and deformation defects are reduced. This can improve stability over time and storage stability. In particular, deformation defects caused by gentle unevenness peculiar to double-sided recording type optical recording media using hot melt adhesives can be made less likely to occur.
〔実施例=1〕
連続式スパッタリング装置のクライオポンプに直結され
た排気口から排気して第1チヤンバー内の初期真空度を
3 X l O−’ Torrにした。続いて、3Nの
高純度Arガス10100cとN2ガス5secmとを
前記第1チヤンバー内に導入し、前記連続式スパッタリ
ング装置のコンダクタンスを全開にして前記第1チヤン
バー内のガス圧をl vb Torrにした。そして、
Si金属の窒素ガス反応スパンタ法により、前記第1チ
ヤンバー内の次に、前記第1誘電耐保護層が形成された
前記ポリカーボネート基板を第2チヤンバーに移動し、
前記第2チャンバー内のArガス圧を1 m Torr
とした後、Fe、、Co、Cr、合金とTbとの2元同
時スバ・フタ法により前記第1誘電体保護層の上に25
0人の膜圧のTbt+ (Feq*C01sCrq )
yvの薄膜よりなる記録層とを形成した。[Example = 1] The initial vacuum degree in the first chamber was set to 3 X l O-' Torr by exhausting from the exhaust port directly connected to the cryopump of the continuous sputtering apparatus. Subsequently, 10100c of 3N high-purity Ar gas and 5 sec of N2 gas were introduced into the first chamber, and the conductance of the continuous sputtering device was fully opened to bring the gas pressure in the first chamber to lvb Torr. . and,
moving the polycarbonate substrate on which the first dielectric protection layer is formed next from within the first chamber to a second chamber by a Si metal nitrogen gas reaction spunter method;
The Ar gas pressure in the second chamber was set at 1 m Torr.
After that, 25% of Fe, Co, Cr, alloy, and Tb were deposited on the first dielectric protective layer using a binary simultaneous sub-lid method.
0 person's membrane pressure Tbt+ (Feq*C01sCrq)
A recording layer consisting of a thin film of yv was formed.
さらに、前記記録層を前記第1誘電体保護層の上に成膜
した積層膜を有する前記ポリカーボネート基板を第3チ
ヤンバー内に移動して前記第1誘電体保護層と同一の成
膜条件で350人のSiNxの薄膜からなる第2誘電体
保護層を前記記録層の上に形成した。Furthermore, the polycarbonate substrate having the laminated film in which the recording layer is deposited on the first dielectric protective layer is moved into the third chamber, and the recording layer is deposited for 350 minutes under the same deposition conditions as the first dielectric protective layer. A second dielectric protective layer consisting of a thin film of SiNx was formed on the recording layer.
しかる後、前記第2誘電体保護層の成膜を終えた前記ポ
リカーボネート基板を第4チヤンバーに移動して、前記
コンダクタンスを絞って、前記第4のチャンバー内のA
rガス圧を20■↑orrにしてから、3Nの純度のA
lターゲットにRFit力1kHを印加してスパツクを
行って、前記第2誘電体保護層の上に250人の膜厚の
Alのfl膜の金属反射層を形成して前記ポリカーボネ
ート基板上に前記第1誘電体保護層、記録層、第2誘電
体保護層及び金属反射層がこの順で成膜させている積層
膜の光磁気記録層を作成した。Thereafter, the polycarbonate substrate on which the second dielectric protective layer has been formed is moved to a fourth chamber, the conductance is narrowed, and the A in the fourth chamber is
After setting the r gas pressure to 20■↑orr, add A with a purity of 3N.
A RFit force of 1 kHz is applied to the target to perform spattering to form a metal reflective layer of an Al fl film with a thickness of 250 mm on the second dielectric protective layer, and then the second dielectric protective layer is formed on the polycarbonate substrate. A magneto-optical recording layer was prepared as a laminated film in which a first dielectric protective layer, a recording layer, a second dielectric protective layer, and a metal reflective layer were formed in this order.
前記光磁気記録層の上に、大日本インキ■製、紫外線硬
化樹脂#5D−17をスピンコーティング法により塗布
し、紫外線を照射して硬化して厚さ2μmの有機樹脂保
護層を形成した。On the magneto-optical recording layer, an ultraviolet curable resin #5D-17 manufactured by Dainippon Ink (I) was applied by spin coating and cured by irradiation with ultraviolet rays to form an organic resin protective layer with a thickness of 2 μm.
前記有機樹脂保護層の上に東亜合成化学■製、ホントメ
ルト接着剤#XW−13をロールコータ−にて塗布した
後、前記ポリカーボネ−1・基板を外側に、前記有機樹
脂保護層を内側に向けて、以上のように作成した媒体を
2枚プレス貼り合わせをして、両面記録型光記録媒体の
試料を得た。After applying Hontomelt adhesive #XW-13 manufactured by Toagosei Kagaku ■ on the organic resin protective layer using a roll coater, the polycarbonate 1 substrate was placed on the outside and the organic resin protective layer was placed on the inside. Towards this end, two sheets of the medium produced as described above were pressed together to obtain a sample of a double-sided recording type optical recording medium.
(比較例−1〕
金属反射層成膜時のArのガス圧を1mTorrとした
以外は、実施例−1と同一の条件で両面記録型光記録媒
体の試料を得た。(Comparative Example-1) A sample of a double-sided recording type optical recording medium was obtained under the same conditions as in Example-1 except that the Ar gas pressure during the formation of the metal reflective layer was 1 mTorr.
〔実施例−2〕
5原子%のTaを含有するAl−Ta合金を金属反射層
とした以外は、実施例−1と同一の条件で両面記録型記
録媒体の試#Iを得た。[Example 2] Sample #I of a double-sided recording medium was obtained under the same conditions as Example 1, except that an Al-Ta alloy containing 5 at % of Ta was used as the metal reflective layer.
〔比較例−2〕
金属反射層成膜時のA「のガス圧を1mTorrとした
以外は、実施例−2と同一の条件で両面記録型光記録媒
体の試料を得た。[Comparative Example-2] A sample of a double-sided recording type optical recording medium was obtained under the same conditions as in Example-2, except that the gas pressure of A was set to 1 mTorr when forming the metal reflective layer.
C実施例−3〕
2原子%のTiを含有するAl−Tl合金を金属反射層
とした以外は、実施例−1と同一の条件で両面記録型記
録媒体の試料を得た。C Example-3] A sample of a double-sided recording medium was obtained under the same conditions as Example-1, except that an Al--Tl alloy containing 2 at % Ti was used as the metal reflective layer.
〔比較例−3〕
金属反射層成膜時のArのガス圧を1mTorrとした
以外は、実施例−3と同一の条件で両面記録型光記録媒
体の試料を得た。[Comparative Example-3] A sample of a double-sided recording type optical recording medium was obtained under the same conditions as in Example-3, except that the Ar gas pressure during the formation of the metal reflective layer was 1 mTorr.
〔比較例−4〕
金属反射層成膜時のA「のガス圧を5mTorrとした
以外は、実施例−1と同一の条件で両面記録型光記録媒
体の試料を得た。[Comparative Example-4] A sample of a double-sided recording type optical recording medium was obtained under the same conditions as in Example-1, except that the gas pressure of A" was set to 5 mTorr when forming the metal reflective layer.
〔実施例−4]
金属反射層成膜時のArのガス圧をLow Torrと
した以外は、実施例−1と同一の条件で両面記録型光記
録媒体の試料を得た。[Example 4] A sample of a double-sided recording type optical recording medium was obtained under the same conditions as in Example 1, except that the Ar gas pressure during the formation of the metal reflective layer was set to Low Torr.
以上のようにして得られた両面記録型光記録媒体の試料
A−HのBER、フェーズマージン及び記録消去ノイズ
を以下のような方法で測定した。The BER, phase margin, and recording/erasing noise of Samples A to H of the double-sided recording type optical recording media obtained as described above were measured by the following methods.
B E R: 1800rpm、 f=3.7Hllz
単一周波数の信号を記録し、2000 )ラック再生時
の全ピント数に対する欠落したbit数で表示した。BER: 1800rpm, f=3.7Hllz
A single frequency signal was recorded and expressed as the number of missing bits relative to the total number of focuses during rack playback.
フェーズマージン2フエーズマージン測定機により、一
定のエラーレートに対する位相タイムマージンを測定し
た。(業界用語として通用する。)
得られた結果を第1表に示す。Phase Margin 2 The phase time margin for a constant error rate was measured using a phase margin measuring device. (This is commonly used as an industry term.) The results obtained are shown in Table 1.
第 1 表
次に、各両面記録型光記録媒体の試料を80°C190
%RHの条件下に1000時間放置した。放置後の各特
性を測定した。その結果を、第2表に示す。Table 1 Next, samples of each double-sided recording type optical recording medium were heated at 80°C and 190°C.
%RH for 1000 hours. Each characteristic was measured after being left standing. The results are shown in Table 2.
なお、比較例−1及び比較例−4では、500時間の放
置時間でも、金属反射層の全面に腐食が発生して、測定
ができなかった。In addition, in Comparative Example 1 and Comparative Example 4, corrosion occurred on the entire surface of the metal reflective layer even after being left for 500 hours, making measurement impossible.
第2表
特許出願人 富士写真フィルム株式会社1、事件の表示
平成/ 年特願第11P11!号2、発明の名
称 光記録媒体
3、補正をする者
事件との関係 特許出願人性 所 神奈
川県南足柄市中沼210番地名 称(520)富士写真
フィルム株式会社補正の対象 明細書の「発明の詳細
な説明」の欄
補正の内容
明細書の「発明の詳細な説明」の項の記載を下の通り補
正する。Table 2 Patent Applicant: Fuji Photo Film Co., Ltd. 1, Incident Indication: Heisei/Year Patent Application No. 11P11! No. 2, Title of the invention Optical recording medium 3. Relationship with the person making the amendment Patent applicant Location 210 Nakanuma, Minamiashigara City, Kanagawa Prefecture Name (520) Fuji Photo Film Co., Ltd. Subject of amendment "Details of the invention" in the specification Contents of the amendment The description in the ``Detailed Description of the Invention'' section of the specification is amended as follows.
1)第3頁19行目の 「改良Jの後に 「の」 を挿入する。1) Page 3, line 19 “After improved J. "of" Insert.
2)第3頁7行目の 「ハンバクト」を rコンパクト」 と補正する。2) Page 3, line 7 "Hanbakuto" r compact” and correct it.
3)第7頁5行目の 「できる。」を 「できる。」 補正する。3) Page 7, line 5 “I can do it.” "can." to correct.
4)第7頁6行目の [真空成膜室内に不活性ガスを」を [真空成膜室内の不活性ガスの」 と補正する。4) Page 7, line 6 [Insert inert gas into the vacuum deposition chamber] [Inert gas in the vacuum deposition chamber] and correct it.
5)第7頁■4行目の 「ズとしては、」を 「スとしては、」 と補正する。5) Page 7 ■ 4th line "As for" “As a person,” and correct it.
6)第9頁15〜16行目の r99.9乃至95原子%」を [95原子%以上J と補正する。6) Page 9, lines 15-16 r99.9 to 95 atomic%” [95 atomic% or more J and correct it.
7)第10頁2行目の rYt」を rTi」 と補正する。7) Page 10, line 2 rYt” rTi” and correct it.
8)第】0頁15行目の 「反射タイプ」を rROM型」 と補正する。8) No.] Page 0, line 15 "Reflective type" rROM type” and correct it.
9)第10頁19行目の 「誘電耐」を 「誘電体」 と補正する。9) Page 10, line 19 "Dielectric resistance" "Dielectric" and correct it.
10)71413頁2行目の 「そう薄膜」を 「層薄膜J と補正する。10) Page 71413, line 2 "So thin film" "Layer thin film J and correct it.
11)第13頁9行目の 「窒化セイ素」を 「窒化ケイ素J と補正する。11) Page 13, line 9 "Silicon nitride" "Silicon nitride J and correct it.
12)第14頁2行目の 「ガスガス」を 「ガス」 と補正する。12) Page 14, line 2 "Gas Gas" "gas" and correct it.
13)第14頁19行目の 「誘電耐」を 「誘電体」 と補正する。13) Page 14, line 19 "Dielectric resistance" "Dielectric" and correct it.
14)第15頁4行目の 「膜圧」を 「膜厚」 と補正する。14) Page 15, line 4 "Membrane pressure" "Film thickness" and correct it.
Claims (3)
る金属反射層の薄膜を有する光記録媒体において、該金
属反射層は、10mTorr以上のガス圧となるまで不
活性ガスを導入した条件下でAlを主体とする金属をス
パッターすることにより成膜された薄膜であるとこを特
徴とする光記録媒体。(1) In an optical recording medium having a thin film of a metal reflective layer mainly made of Al (aluminum) on a transparent substrate, the metal reflective layer is coated under conditions in which an inert gas is introduced until the gas pressure reaches 10 mTorr or more. An optical recording medium characterized in that it is a thin film formed by sputtering a metal mainly composed of Al.
以上であることを特徴とする請求項1記載の光記録媒体
。(2) The content of Al in the metal reflective layer is 90 atomic %
The optical recording medium according to claim 1, wherein the optical recording medium is as follows.
誘電体保護層及び前記金属反射層がこの順で成膜された
積層膜がある光磁気記録層を有する請求項1記載の光記
録媒体。(3) On a transparent substrate, a first dielectric protective layer, a recording layer, a second
2. The optical recording medium according to claim 1, comprising a magneto-optical recording layer having a laminated film in which a dielectric protective layer and the metal reflective layer are formed in this order.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11985589A JPH02297737A (en) | 1989-05-12 | 1989-05-12 | Optical recording medium |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP11985589A JPH02297737A (en) | 1989-05-12 | 1989-05-12 | Optical recording medium |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH02297737A true JPH02297737A (en) | 1990-12-10 |
Family
ID=14771943
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP11985589A Pending JPH02297737A (en) | 1989-05-12 | 1989-05-12 | Optical recording medium |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH02297737A (en) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0849810A3 (en) * | 1996-12-18 | 1998-09-09 | Canon Kabushiki Kaisha | Method for producing photovoltaic element |
US5976641A (en) * | 1991-03-07 | 1999-11-02 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
US5998730A (en) * | 1997-05-13 | 1999-12-07 | Canon Kabushiki Kaisha | Production method for deposited film, production method for photoelectric conversion element, production apparatus for deposited film, production apparatus for photoelectric conversion element |
-
1989
- 1989-05-12 JP JP11985589A patent/JPH02297737A/en active Pending
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5976641A (en) * | 1991-03-07 | 1999-11-02 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
US6206985B1 (en) | 1991-03-07 | 2001-03-27 | Kabushiki Kaisha Kobe Seiko Sho | A1 alloy films and melting A1 alloy sputtering targets for depositing A1 alloy films |
EP0849810A3 (en) * | 1996-12-18 | 1998-09-09 | Canon Kabushiki Kaisha | Method for producing photovoltaic element |
US6132569A (en) * | 1996-12-18 | 2000-10-17 | Canon Kabushiki Kaisha | Method for producing photovoltaic element |
US5998730A (en) * | 1997-05-13 | 1999-12-07 | Canon Kabushiki Kaisha | Production method for deposited film, production method for photoelectric conversion element, production apparatus for deposited film, production apparatus for photoelectric conversion element |
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