JPH01283839A - Semiconductor device - Google Patents

Abstract

PURPOSE:To prevent invasion of moisture into inside of an IC from the periphery of the IC clip so as to improve humidity resistance and elevate reliability by contacting, in a scribe area, an Si substrate or thermal oxide film on the Si substrate directly with polyimide resin formed at the upper layer. CONSTITUTION:An ICAL pad 2 is formed on an Si substrate 1, which is covered with a passivation CVD SiO2 3 and CVD Si3N4 and further covered with a polyimide film 5 in a scribe area 6, and there the polyimide 5 contacts directly with the Si substrate 1. Accordingly, moisture invading from the interface 11 is absorbed in the polyimide 5 having high hygroscopicity and does not permeate into the inside. Hereby, moisture and contaminant do not invade inside the IC. which realizes the product with high reliability.

Description

DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor device using Si as a substrate, and is particularly effective in a field requiring a high-reliability product 1c.

[Essentials of the invention]

The present invention relates to a semiconductor device characterized in that in the periphery of an IC chip or in a scribe structure, a Si substrate or a thermal oxide film on the Si substrate is in direct contact with a polyimide resin formed as an upper layer.

[Conventional technology]

Conventionally, the periphery of an IC chip is made of Si, as shown in Figure 3.
In the scribe area 6 of the substrate 1, CVD accumulated S i
5llN4 film 4 that is in contact with O2 and has been accumulated by CVD
was formed.

[Problem to be solved by the invention]

However, in conventional semiconductor devices, CVD SiO2
Moisture and impurities contained in the moisture enter from the interface between the film 3 and the Si substrate 1, corroding the AL pad 2 and causing IC failure. The purpose of this invention is to prevent moisture from entering inside an IC, improve moisture resistance, and provide a highly reliable semiconductor device.

[Means to solve the problem]

The present invention is a CV D SiO2 film or CVDSi,
To prevent moisture from entering from the N< and Si substrates, CVD
(') S i O2 or S l s N 4 (
7) Polyimide is directly attached to Si in the outer noscribed area.
It has a structure in contact with the substrate or thermal oxidation 5sto2.

[For production]

In this case, moisture that has entered from the interface between the polyimide and the Si substrate or the thermal oxide film is absorbed by the hygroscopic polyimide, thereby preventing moisture from entering into the IC. Therefore, according to the present invention, there is provided a highly reliable semiconductor device in which moisture and contaminants do not enter into the IC from around the IC chip.

〔Example〕

Hereinafter, it will be explained in detail using examples. Figures 1 and 2
The figure is a cross-sectional view of a pad and scribe region structure in an embodiment of a semiconductor device according to the present invention.

FIG. 1 shows the formation of the ICAL bump 2 on the Si substrate 1.
Passivation CvDSiO23, C■DSisNa
Furthermore, the scribe region 6 is covered with a polyimide film 5 , and the polyimide 5 is in direct contact with the Si substrate 1 . Reference numeral 8 denotes a pad opening, which is an area where connection with the outside, such as a solder bump or bonding, will be performed in a later process. In FIG. 2, a thermal oxide film 7 is present on a Si substrate 1, an AL pad 2 is formed, and a passivation S
is N 4 membrane 4 and polyimide g! It is covered with 5.

In the scribe region 6, the polyimide film 5 and the thermal oxide film 7 are in direct contact with each other.9 In the embodiment of the present invention, around the IC, in the scribe region, the polyimide film is in direct contact with the Si substrate or the thermal oxide film, and CvD Si O2 or C
The interface with which the V D S 12N s or Si substrate comes into contact, for example interface 9.10 in FIG. 3, is covered with polyimide. Therefore, moisture entering from the interface 11 in FIG. 1.2 is absorbed by the highly hygroscopic polyimide 5 and does not penetrate inside.

Note that the interface 12 in FIG. 2 is the interface between the thermal oxide film and the Si substrate, and the diffusion of moisture from this interface can be almost ignored.

〔Effect of the invention〕

As described above, the semiconductor device according to the present invention provides a highly reliable IC with excellent moisture resistance.

[Brief explanation of the drawing]

1 and 2 show a cross-sectional view of a semiconductor device according to an embodiment of the present invention, and FIG. 3 shows a cross-sectional view of a conventional semiconductor device. 1... Si substrate 2... AL pad 3... CvDSiO2 4... CvDSi, N4 5... Polyimide 6... Scribe region 7... Thermal oxide film 8... Pad opening part 9.10.11.12 ...More than the interface of each film Applicant Seiko Epson Co., Ltd. Agent Patent attorney Masa Homare Kamiyanagi (and 1 other person) Figure 71 Ji Figure 2?

Claims (1)

[Claims] The periphery of the IC chip, that is, the scribe area, is
A semiconductor device characterized in that a thermal oxide film on a substrate or a Si substrate is in direct contact with a polyimide resin formed as an upper layer.