JPH01248546A - Manufacture of electronic parts - Google Patents
Manufacture of electronic partsInfo
- Publication number
- JPH01248546A JPH01248546A JP63074402A JP7440288A JPH01248546A JP H01248546 A JPH01248546 A JP H01248546A JP 63074402 A JP63074402 A JP 63074402A JP 7440288 A JP7440288 A JP 7440288A JP H01248546 A JPH01248546 A JP H01248546A
- Authority
- JP
- Japan
- Prior art keywords
- resin
- sealing
- electronic part
- electronic component
- lead
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 8
- 229920005989 resin Polymers 0.000 claims abstract description 41
- 239000011347 resin Substances 0.000 claims abstract description 41
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000377 silicon dioxide Substances 0.000 claims abstract description 12
- DCVWZWOEQMSMLR-UHFFFAOYSA-N silylperoxysilane Chemical compound [SiH3]OO[SiH3] DCVWZWOEQMSMLR-UHFFFAOYSA-N 0.000 claims abstract description 8
- 238000001746 injection moulding Methods 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims description 9
- 229920005992 thermoplastic resin Polymers 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims 2
- 238000007789 sealing Methods 0.000 abstract description 20
- 239000007822 coupling agent Substances 0.000 abstract description 5
- 238000002347 injection Methods 0.000 abstract description 3
- 239000007924 injection Substances 0.000 abstract description 3
- 239000000203 mixture Substances 0.000 abstract description 2
- 238000000465 moulding Methods 0.000 abstract description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000088 plastic resin Substances 0.000 abstract 2
- 238000005096 rolling process Methods 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 description 10
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 230000008569 process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- -1 polybutylene terephthalate Polymers 0.000 description 2
- 229920001707 polybutylene terephthalate Polymers 0.000 description 2
- 229920000642 polymer Polymers 0.000 description 2
- 229910000077 silane Inorganic materials 0.000 description 2
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 1
- 125000003903 2-propenyl group Chemical group [H]C([*])([H])C([H])=C([H])[H] 0.000 description 1
- ODPYDILFQYARBK-UHFFFAOYSA-N 7-thiabicyclo[4.1.0]hepta-1,3,5-triene Chemical compound C1=CC=C2SC2=C1 ODPYDILFQYARBK-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 240000007049 Juglans regia Species 0.000 description 1
- 235000009496 Juglans regia Nutrition 0.000 description 1
- 229920000106 Liquid crystal polymer Polymers 0.000 description 1
- 239000004977 Liquid-crystal polymers (LCPs) Substances 0.000 description 1
- 244000273256 Phragmites communis Species 0.000 description 1
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000009739 binding Methods 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910002026 crystalline silica Inorganic materials 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000003063 flame retardant Substances 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 230000007062 hydrolysis Effects 0.000 description 1
- 238000006460 hydrolysis reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 150000004979 silylperoxides Chemical group 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- 229920001187 thermosetting polymer Polymers 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 description 1
- 235000020234 walnut Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
Description
【発明の詳細な説明】
〔発明の目的〕
（産業上の利用分野）
本発明は電子部品の封正に用いられる電子部品及びその
製造方法に関する。DETAILED DESCRIPTION OF THE INVENTION [Object of the Invention] (Industrial Application Field) The present invention relates to an electronic component used for sealing an electronic component and a manufacturing method thereof.
（従来の技術）
一般に、電子部品の封止には、熱硬化性樹脂であるエポ
キシ樹脂が用いられている。しかし。(Prior Art) Epoxy resin, which is a thermosetting resin, is generally used for sealing electronic components. but.
エポキシ樹脂の保管に冷蔵庫を必要とし、かつ。Requires a refrigerator to store epoxy resin, and.
トランスファー成形工程においてエポキシ樹脂内の離型
剤、離燃剤のしみ出しにより発生した肉厚５μｍ程度の
パリを除去する工程が必要であシ、生産効率が悪い。ま
た、エポキシ樹脂の硬化時間が５〜１０分、なおかつポ
ストキュア工程が必要でサイクルタイムの短縮ができな
い。さらには、スプルー、：７ンナー等の再生による使
用ができないため、材料歩留が悪い。In the transfer molding process, it is necessary to remove particles with a thickness of about 5 μm that are generated due to seepage of the mold release agent and flame retardant in the epoxy resin, resulting in poor production efficiency. Furthermore, the curing time of the epoxy resin is 5 to 10 minutes, and a post-curing process is required, making it impossible to shorten the cycle time. Furthermore, since sprue, :7ner, etc. cannot be recycled and used, the material yield is poor.
そこで、熱可塑性樹脂による封止が考えられているが、
熱可塑性樹脂は、密着性がエポキシ樹脂に比較して劣り
、リードフレームと封止樹脂間にギャップを生じ、この
ギャップからの水分の侵入により、チップ表面を汚染し
、リーク電流を生じていた。Therefore, sealing with thermoplastic resin has been considered, but
Thermoplastic resin has poor adhesion compared to epoxy resin, creating a gap between the lead frame and the sealing resin, and moisture entering through this gap contaminates the chip surface and causes leakage current.
（発明が解決しようとする課題）
本発明は、リードフレームと封止樹脂との密着性を向上
させ、かつまた、生産性の良好な電子部品及びその製造
方法を提供することを目的とする。(Problems to be Solved by the Invention) An object of the present invention is to provide an electronic component that improves the adhesion between a lead frame and a sealing resin and also has good productivity, and a method for manufacturing the same.
（課題を解決するための手段と作用）
熱可塑性樹脂と、粉末状のシリカと、シリルパーオキシ
ドとを重量比でそれぞれ４９ ： ５０ ： １乃至２
５ ： ７０ ： ５含む樹脂を用いてリード部を封止
する樹脂部を射出成形し、リード部と樹脂部との密着性
を向上させるようにしたものである。(Means and effects for solving the problem) The weight ratio of thermoplastic resin, powdered silica, and silyl peroxide is 49:50:1 to 2, respectively.
The resin part for sealing the lead part is injection molded using a resin containing 5:70:5, and the adhesion between the lead part and the resin part is improved.
（実施例） 以下１本発明の一実施例を図面を参照して詳述する。(Example) An embodiment of the present invention will be described below in detail with reference to the drawings.
この実施例の電子部品の封正に用いられる樹脂は、熱可
塑性樹脂と、粉末状のシリカと、シラン系のカップリン
グ剤とからなっている。とれらの混合割合は１重量比で
それぞれ４９ ： ５０ ： １から２５： ７０ ：
ｓである。しかして、熱可塑性樹脂としては、ポＩＪ
フェニレンサルファイド（ｐｐｓ）、液晶ポリマー（
ＬＯＰ）、ポリブチレンテレフタレート（ＰＢＴ）のう
ち少なくとも一種以上含まれてなるものである。また、
シリカは、溶融シリカ若しくは結晶シリカからなってい
る。そして、このシリカの平均粒径は、 １０〜５０μ
ｍである。このようなシリカは。The resin used for sealing the electronic component in this example consists of a thermoplastic resin, powdered silica, and a silane-based coupling agent. The mixing ratio of these is 49:50:1 to 25:70:1 by weight, respectively.
It is s. However, as a thermoplastic resin, PoIJ
Phenylene sulfide (pps), liquid crystal polymer (
LOP) and polybutylene terephthalate (PBT). Also,
The silica consists of fused silica or crystalline silica. The average particle size of this silica is 10 to 50μ.
It is m. This kind of silica.
ジェットミル法若しくは振動ミル法で粉末化したもので
ある。一方、カップリング剤としては、シリルパーオキ
シド（Ｒ，ｎ８ｉ （００几′）ｎＣｎは１〜４の整数
〕）であって、Ｒとしては、メチル基、ビニル基、アリ
ル基などがある。また、几′とじては。It is powdered using a jet mill method or a vibration mill method. On the other hand, the coupling agent is silyl peroxide (R,n8i (00几')nCn is an integer of 1 to 4), and R includes a methyl group, a vinyl group, an allyl group, and the like. Also, as for 几'toji.
ｔ−ブチル基、クルミ基、ｐ−メンチル基などがある。Examples include t-butyl group, walnut group, and p-menthyl group.
ところで、シリカの重量比を５０〜７０に限定したのは
、５０％よシ少ないと線膨張係数が７ Ｘ １０−’ｃ
ｒＩＬ／ｃＭＬ・℃と大きくなυ、後述する電子部品の
リード線の線膨張係数が銅系だと１．ＯＸ １０ ｃ
ｒｒｔ／ｃｒＩＬ・℃でらるために、この差によ多温度
サイクルが加わると、リード線の断線を生じる。また、
シリカが７０チ以上だと、射出成形時に、樹脂の溶融粘
度が大きくなシ、リード線の断線を生じる。他方、シリ
ルパーオキシドの重量比を１〜５％と限定したのは、１
％以下だと密着性の効果がでないし、また。By the way, the reason why the weight ratio of silica is limited to 50 to 70 is because if it is less than 50%, the coefficient of linear expansion is 7 x 10-'c.
rIL/cML・℃ is large υ, and if the linear expansion coefficient of the lead wire of the electronic component described later is copper-based, it is 1. OX10c
rrt/crIL.degree. C., so if multiple temperature cycles are added to this difference, the lead wire will break. Also,
If the silica content is 70 or more, the melt viscosity of the resin will be high and lead wires will break during injection molding. On the other hand, the weight ratio of silyl peroxide was limited to 1 to 5%.
If it is less than %, the adhesion will not be effective.
５％以とだと金型表面との密着性が向上するために、成
形後の離型時に成形された電子部品の取出しが困難とな
る。このような構成を有する電子部品封止用樹脂は、カ
レンダーロール式混線機およびミキサー等を併用して混
合した後、射出成形機により所定の電子部品の形状に成
形される。If it is less than 5%, the adhesion to the mold surface will improve, making it difficult to take out the molded electronic component when releasing the mold after molding. The resin for encapsulating electronic components having such a configuration is mixed using a calendar roll mixer, a mixer, etc., and then molded into the shape of a predetermined electronic component using an injection molding machine.
つぎに、上記実施例の電子部品封止用樹脂を用いたこの
実施例の電子部品である半導体装置について述べる。Next, a semiconductor device, which is an electronic component of this example, using the electronic component sealing resin of the above example will be described.
第１図は、この実施例の半導体装置を示している。この
半導体装置は、所定のパターンの形成された半導体チッ
プ（１）がリードフレームのテップペッド（２）に取付
けられ、この半導体チック＋１）およびそのパッドとリ
ード（３）・・・の基部とを接続する金ワイヤ（４）な
どを上述した組成を有する樹脂封止部（５）により封止
してなるものである。上記リード（３）・・・は、樹脂
封止部（５）から外側に突出し１、中途部から下方に折
曲されている。FIG. 1 shows the semiconductor device of this embodiment. In this semiconductor device, a semiconductor chip (1) on which a predetermined pattern has been formed is attached to a step pad (2) of a lead frame, and this semiconductor chip (1) and its pads are connected to the bases of leads (3)... The gold wire (4) and the like are sealed with a resin sealing part (5) having the composition described above. The leads (3) . . . protrude outward from the resin sealing portion (5) 1 and are bent downward from the middle.
このような半導体装置の製造は、第２図に示すように、
チップベツド（２）および複数本のリード（３）・・・
が連結部（６）・・・を介して一体に連結されたリード
フレーム（力を用い、そのチップベツド（２）に半導体
チップ（１）をパッドとリード（３）の基部とを金ワイ
ヤ（４）で接続したのち、これを後述するモールド金型
に取付けて射出成形により樹脂封止する。第２図中の破
線は、その樹脂封止部（５）の平面形状を示している。The manufacturing of such a semiconductor device is as shown in FIG.
Chip bed (2) and multiple leads (3)...
The semiconductor chip (1) is attached to the chip bed (2) of the lead frame (which is integrally connected via the connecting portion (6)) by connecting the pad and the base of the lead (3) to the gold wire (4). ), then it is attached to a mold described later and sealed with resin by injection molding.The broken line in FIG. 2 shows the planar shape of the resin sealed part (5).
しかるのち、樹脂封止部（５）の外側に延出しているリ
ート責３）・・・の基部を折曲することにより形成され
ている。Thereafter, the base portions of the reeds 3) extending outside the resin sealing portion (5) are bent.
このような半導体装置は、リードフレーム（７）と樹脂
封止部（５）との密着性がすこぶる良好で、悪条件下で
も水分の侵入がない高い信頼性を有する。Such a semiconductor device has extremely good adhesion between the lead frame (7) and the resin sealing portion (5), and has high reliability with no moisture intrusion even under adverse conditions.
しかも、樹脂封止部（５）は、熱可塑性樹脂の射出成形
により得られるので、パリ発生がないことによυバリ取
り工程の省略及びサイクルタイムの短縮をはかることが
できるとともに、樹脂の保管が容易となる。ちなみに、
第１表は、上述した半導体装置を気温８５°Ｃ２かつ湿
度８５チ中にて７２時間放置したときの、水分の樹脂封
止部（５）内への水分の透過距離Ｌ（第３図参照）測定
結果を示すものである。この表が示すように、シリルパ
ーオキシドの添加量が、０％、２％、５％と各順に増加
するにつれ。Moreover, since the resin sealing part (5) is obtained by injection molding of thermoplastic resin, it is possible to omit the deburring process and shorten the cycle time by eliminating the occurrence of flash, as well as to save the resin. becomes easier. By the way,
Table 1 shows the distance L of moisture permeation into the resin sealing part (5) when the semiconductor device described above is left for 72 hours at a temperature of 85 degrees Celsius and a humidity of 85 degrees Celsius (see Figure 3). ) shows the measurement results. As this table shows, as the amount of silyl peroxide added increases in order of 0%, 2%, and 5%.
透過距離りは減少する。とぐに、シリルパーオキシドの
添加量が５俤のときは、水分の透過距離りは０となって
いる。このことは、シリルノく−オキシドが、リードフ
レーム（力と樹脂封止部（５）との密着性の向上に大き
く寄与していることを示す。このように密着性が向上す
るのは、■シリルノく一オキシドがマトリックス高分子
とフリーラジカル機構で結合する。■リードフレーム（
７）面への結合反応が熱分解により進行する。ことの２
点によると考えられる。これに対し、従来のシラン系カ
ップリング剤は、■マトリックス高分子とイオン結合に
より結合する。■リードフレーム（７）ＷＪへの結合反
応が加水分解により進行する。ことにより、密着性が劣
ると考えられる。とくに、従来のカップリング剤は、上
記０項により、樹脂封止部（５）中に水分が侵入して反
応が生じる問題を生じる。The penetration distance decreases. When the amount of silyl peroxide added is 5 tons, the water permeation distance becomes 0. This shows that silyl oxide greatly contributes to improving the adhesion between the lead frame (force and resin sealing part (5)).This improvement in adhesion is due to The silyl oxide binds to the matrix polymer via a free radical mechanism.■Lead frame (
7) The bonding reaction to the surface proceeds by thermal decomposition. Koto no 2
I think it depends on the point. In contrast, conventional silane-based coupling agents (1) bond to matrix polymers through ionic bonds; ■Lead frame (7) Binding reaction to WJ proceeds by hydrolysis. This is thought to result in poor adhesion. In particular, with the conventional coupling agent, due to the above-mentioned item 0, moisture enters into the resin sealing part (5) and a reaction occurs.
以下余白
なお、上記実施例において、粉末状のシリカを樹脂成分
として含有させているが、ガラス繊維でもよい。Note: In the above examples, powdered silica is contained as a resin component, but glass fiber may also be used.
さらに、電子部品としては、ＬＳＩ、ＩＣ等の半導体装
置に限ることなく、コンデンサ、抵抗等、リードと樹脂
部を有するものであればいかなるものでもよい。Further, the electronic component is not limited to semiconductor devices such as LSIs and ICs, and may be any device having leads and resin parts, such as capacitors and resistors.
本発明は、電子部品のリード部と樹脂部との密着性が向
上し、水分の樹脂部内への侵入を防ぐことができるので
、′Ｕ１子部品としての信頼性が著しく向上する。また
、樹脂部の射出成形が可能となシ、パリ取シ工程の省略
、サイクルタイムの短縮などにより、生産性が向上する
。また、樹脂の再生が可能となシ歩留が改善するととも
に、樹脂の保管に冷蔵庫を必要しない利点を有している
。According to the present invention, the adhesion between the lead portion and the resin portion of the electronic component is improved and moisture can be prevented from entering the resin portion, so that the reliability of the electronic component as a child component is significantly improved. In addition, productivity is improved because the resin part can be injection molded, the deburring process is omitted, and cycle time is shortened. In addition, it has the advantage that the resin can be recycled, improving the yield, and does not require a refrigerator to store the resin.
第１図は本発明の一実施例の電子部品の断面図。
第２図は第１図の電子部品の製造方法の説明図。
第３図は本発明の一実施例の電子部品封土用樹脂の効果
の説明に用いられる図である。
（３） ： リ − ド 。
（５）：明所封止部。
（カニリードフレーム。
代理人 弁理士 則 近 憲 佑
同 松山光之
第１図
１′
第 ２ 図
第 ３ ＲFIG. 1 is a sectional view of an electronic component according to an embodiment of the present invention. FIG. 2 is an explanatory diagram of a method for manufacturing the electronic component shown in FIG. 1. FIG. 3 is a diagram used to explain the effect of the resin for enclosing electronic components according to one embodiment of the present invention. (3): Read. (5): Bright sealing part. (Crab Lead Frame. Agent Patent Attorney Noriyuki Chika Yudo Mitsuyuki Matsuyama Figure 1 1' Figure 2 Figure 3 R
Claims (2)
させて封止する樹脂部とを具備し、上記樹脂部は、熱可
塑性樹脂と、粉末状のシリカと、シリルバーオキシドと
が、それぞれ重量比で４９：５０：１乃至２５：７０：
５の割合で含まれてなることを特徴とする電子部品。(1) It includes a metal lead part and a resin part that protrudes and seals a part of the lead part, and the resin part is made of thermoplastic resin, powdered silica, and silyl peroxide. , respectively in a weight ratio of 49:50:1 to 25:70:
An electronic component characterized by comprising:
させて封止する樹脂部とからなり、上記樹脂部は、熱可
塑性樹脂と、粉末状のシリカと、シリルバーオキシドと
が、それぞれ重量比で４９：５０：１乃至２５：７０：
５の割合で含まれてなる電子部品の製造方法において、
上記樹脂部を射出成形により成形することを特徴とする
電子部品の製造方法。(2) Consists of a metal lead part and a resin part that protrudes and seals a part of the lead part, and the resin part is made of thermoplastic resin, powdered silica, and silyl peroxide. , respectively in a weight ratio of 49:50:1 to 25:70:
In a method for manufacturing an electronic component comprising:
A method of manufacturing an electronic component, characterized in that the resin part is molded by injection molding.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63074402A JPH01248546A (en) | 1988-03-30 | 1988-03-30 | Manufacture of electronic parts |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63074402A JPH01248546A (en) | 1988-03-30 | 1988-03-30 | Manufacture of electronic parts |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01248546A true JPH01248546A (en) | 1989-10-04 |
Family
ID=13546159
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63074402A Pending JPH01248546A (en) | 1988-03-30 | 1988-03-30 | Manufacture of electronic parts |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01248546A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000042108A1 (en) * | 1999-01-14 | 2000-07-20 | Idemitsu Petrochemical Co., Ltd. | Polyarylene sulfide resin composition |
| US6469091B2 (en) | 1999-01-14 | 2002-10-22 | Idemitsu Petrochemical Co., Ltd. | Polyarylene sulfide resin composition |
| US7690303B2 (en) * | 2004-04-22 | 2010-04-06 | Reynolds Systems, Inc. | Plastic encapsulated energetic material initiation device |
| US8100043B1 (en) | 2008-03-28 | 2012-01-24 | Reynolds Systems, Inc. | Detonator cartridge and methods of use |
| US8485097B1 (en) | 2010-06-11 | 2013-07-16 | Reynolds Systems, Inc. | Energetic material initiation device |
-
1988
- 1988-03-30 JP JP63074402A patent/JPH01248546A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2000042108A1 (en) * | 1999-01-14 | 2000-07-20 | Idemitsu Petrochemical Co., Ltd. | Polyarylene sulfide resin composition |
| US6469091B2 (en) | 1999-01-14 | 2002-10-22 | Idemitsu Petrochemical Co., Ltd. | Polyarylene sulfide resin composition |
| US7690303B2 (en) * | 2004-04-22 | 2010-04-06 | Reynolds Systems, Inc. | Plastic encapsulated energetic material initiation device |
| US7748322B1 (en) | 2004-04-22 | 2010-07-06 | Reynolds Systems Inc. | Plastic encapsulated energetic material initiation device |
| US7921774B1 (en) | 2004-04-22 | 2011-04-12 | Reynolds Systems, Inc. | Plastic encapsulated energetic material initiation device |
| US8196512B1 (en) | 2004-04-22 | 2012-06-12 | Reynolds Systems, Inc. | Plastic encapsulated energetic material initiation device |
| US8100043B1 (en) | 2008-03-28 | 2012-01-24 | Reynolds Systems, Inc. | Detonator cartridge and methods of use |
| US8210083B1 (en) | 2008-03-28 | 2012-07-03 | Reynolds Systems, Inc. | Detonator cartridge |
| US8485097B1 (en) | 2010-06-11 | 2013-07-16 | Reynolds Systems, Inc. | Energetic material initiation device |
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