JPH01200625A - Semiconductor wafer processing equipment - Google Patents
Semiconductor wafer processing equipmentInfo
- Publication number
- JPH01200625A JPH01200625A JP63023903A JP2390388A JPH01200625A JP H01200625 A JPH01200625 A JP H01200625A JP 63023903 A JP63023903 A JP 63023903A JP 2390388 A JP2390388 A JP 2390388A JP H01200625 A JPH01200625 A JP H01200625A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- electrostatic chuck
- wafer
- surface plate
- chuck electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 239000002826 coolant Substances 0.000 claims abstract description 7
- 239000000853 adhesive Substances 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 5
- 239000003960 organic solvent Substances 0.000 abstract description 3
- 238000004299 exfoliation Methods 0.000 abstract 1
- 230000000717 retained effect Effects 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 38
- 238000005530 etching Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- 230000001070 adhesive effect Effects 0.000 description 7
- 238000001312 dry etching Methods 0.000 description 6
- 239000011888 foil Substances 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 230000001681 protective effect Effects 0.000 description 4
- 239000010949 copper Substances 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 210000000078 claw Anatomy 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 239000012298 atmosphere Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 239000000498 cooling water Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Drying Of Semiconductors (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、各種半導体装置の製造に用いられ、る半導体
ウェーハ処理装置に係り、特にプラズマを生成する処理
容器内での静電チャック電極を用いた基板支持部の構造
の改良に関する。[Detailed Description of the Invention] [Object of the Invention] (Industrial Field of Application) The present invention relates to a semiconductor wafer processing apparatus used for manufacturing various semiconductor devices, and particularly relates to a semiconductor wafer processing apparatus used in the production of various semiconductor devices, and in particular to a semiconductor wafer processing apparatus used in the production of various semiconductor devices. This invention relates to an improvement in the structure of a substrate support using an electrostatic chuck electrode.
（従来の技術）
近年、半導体集積回路の発展は目覚ましく、サブミクロ
ン寸法のＬＳＩも試作されている。−方生産性を向上さ
せるため、Ｓｉウェーハは大口径化が進み、６インチ、
８インチなどのウェーハが主流になる日も近い。従来の
エツチング工程では、小さい径のウェーハを大きい処理
チャンバを持つエツチング装置で一度にたくさん処理す
ることが可能であった。しかし大口径のウェーハを一つ
のチャンバで数多く処理して均一性、再現性を損わない
ようにすることは容易ではない。そのためウェーハを一
枚ずつ処理する枚葉式エツチング装置が多く開発されて
いる。この枚葉式エツチング装置で生産性を高めるため
には、高いエツチング速度を与える・ことが必要である
。反応性ガスのイオンを照射してエツチングを行う反応
性イオンエツチングはそのための有効な方法として、最
近多用されている。この方法で高いエツチング速度を得
るためには、電極に印加するＲＦ電力を高める等して高
密度プラズマを生成し、大量のイオンを照射する。その
結果、ウェーハには多くのＲＦ雷電流流れ、温度上昇は
免れない。エツチング・マスクに用いられるフォトレジ
ストは熱に弱く、また耐熱性のあるマスクを使用したと
しても昇温によりエツチング特性は大きく変化する。従
ってウェーハを十分に冷却することが重要になる。つ工
−ハを冷却するためには、内部に冷却水を流した電極を
用いて、この電極表面にウェーハを密着させなければな
らない。ウェーハを電極に密着させる方法としては、ウ
ェーハ周辺部をツメ等で押える方法があるが、これはプ
ラズマを乱したり、ツメ自体が昇温しで新たな熱源とな
る、等の問題がある。そこで、静電気力を利用してウェ
ーハを電極に密着させる静電チャックが用いられる。静
電チャック電極は薄い金属箔の表裏に薄い絶縁膜を接着
して作られ、カソード電極上に固定される。(Prior Art) In recent years, the development of semiconductor integrated circuits has been remarkable, and LSIs with submicron dimensions are also being prototyped. -In order to improve productivity, Si wafers are becoming larger in diameter, including 6-inch,
The day when wafers such as 8-inch will become mainstream is coming soon. In conventional etching processes, it is possible to process many small diameter wafers at once using an etching apparatus with a large processing chamber. However, it is not easy to process many large-diameter wafers in one chamber without compromising uniformity and reproducibility. For this reason, many single-wafer etching apparatuses have been developed that process wafers one by one. In order to increase productivity with this single-wafer etching apparatus, it is necessary to provide a high etching rate. Reactive ion etching, which performs etching by irradiating reactive gas ions, has recently been widely used as an effective method for this purpose. In order to obtain a high etching rate with this method, high-density plasma is generated by increasing the RF power applied to the electrode, and a large amount of ions are irradiated. As a result, a large amount of RF lightning current flows through the wafer, which inevitably causes a rise in temperature. The photoresist used as an etching mask is sensitive to heat, and even if a heat-resistant mask is used, the etching characteristics will change significantly as the temperature rises. Therefore, it is important to cool the wafer sufficiently. In order to cool the wafer, the wafer must be closely attached to the surface of the electrode using an electrode with cooling water flowing inside. One method of bringing the wafer into close contact with the electrode is to press the wafer's periphery with a claw or the like, but this has problems such as disturbing the plasma and raising the temperature of the claw itself, creating a new heat source. Therefore, an electrostatic chuck is used that uses electrostatic force to bring the wafer into close contact with the electrode. The electrostatic chuck electrode is made by bonding a thin insulating film to the front and back sides of a thin metal foil, and is fixed onto the cathode electrode.
静電チャック電極は、高電圧が印加されるため何回も使
用している間に絶縁耐圧が劣化してリークを起こす。こ
のためカソード電極から剥がして交換できるように、従
来はこれを粘着剤によりカソード電極に固定していた。Since high voltage is applied to the electrostatic chuck electrode, the dielectric strength deteriorates during repeated use, causing leakage. For this reason, conventionally, it was fixed to the cathode electrode with an adhesive so that it could be peeled off from the cathode electrode and replaced.
ところが粘着剤は、−時的暫定的な固定用に用いられる
ものであるために、通常有機溶剤が使用後も含まれたま
まで固化しない。従って、真空中ではこの−Ｕ機溶剤や
気泡が膨張して、静電チャック電極を剥がす方向に力が
働く。この結果静電チャック電極とカソード電極との密
着性が低下し、ウェーハからカソード電極までの熱伝導
効率が徐々に低下する。これは、ウェーハの冷却が十分
に行われなくなることを意味する。However, since the adhesive is used for temporary fixing, the organic solvent usually remains contained even after use and does not solidify. Therefore, in a vacuum, this -U solvent and air bubbles expand, and a force acts in the direction of peeling off the electrostatic chuck electrode. As a result, the adhesion between the electrostatic chuck electrode and the cathode electrode decreases, and the heat conduction efficiency from the wafer to the cathode electrode gradually decreases. This means that the wafer will not be sufficiently cooled.
（発明が解決しようとする課ＷｆＪ）
以上のように従来のドライエツチング装置等に用いられ
る静電チャック電極は、カソード電極に対する密着性が
十分ではなく、従ってウェーハを確実に冷却することが
できない、という問題があった。(Problem to be solved by the invention WfJ) As described above, the electrostatic chuck electrode used in conventional dry etching equipment etc. does not have sufficient adhesion to the cathode electrode, and therefore cannot reliably cool the wafer. There was a problem.
本発明は、この様な問題を解決した半導体つ工−ハ処理
装置を提供することを目的とする。An object of the present invention is to provide a semiconductor processing apparatus that solves these problems.
［発明の構成］
（課題を解決するための手段）
本発明にかかる半導体ウェーハ処理装置は、真空容器内
にプラズマを生成するための互いに対向する第１．第２
の平板電極を有し、その第１の平板電極上に静電チャッ
ク電極を用いて半導体ウェーハを保持する、という基本
構成を有する。この様な処理装置において本発明では、
第１の電極を、その表面プレート部が取外し可能で、こ
の表面プレート部の裏面に冷却媒体が流れる空間を有す
る構造とし、且つ静電チャック電極をその表面プレート
部に接着固定したことを特徴とする。[Structure of the Invention] (Means for Solving the Problems) A semiconductor wafer processing apparatus according to the present invention includes first wafers facing each other for generating plasma in a vacuum container. Second
It has a basic configuration in which a semiconductor wafer is held on the first flat plate electrode using an electrostatic chuck electrode. In the present invention, in such a processing device,
The first electrode has a structure in which the surface plate portion thereof is removable and has a space on the back surface of the surface plate portion through which a cooling medium flows, and the electrostatic chuck electrode is adhesively fixed to the surface plate portion. do.
（作用）
本発明によれば、静電チャック電極をプラズマ生成用の
電極の表面プレート部と一体化しで、静電チャック電極
が劣化した時には表面ブレード部ごと交換できるように
しているから、静電チャック電極そのものを粘着剤で一
時的に固定して交換可能とした場合と異なり、有機溶剤
や気泡の膨張がない状態として、静電チャック電極の剥
がれを確実に防止することができる。これにより、プラ
ズマ中での被処理ウェーハを確実に冷却することができ
、ウェーハ処理の信頼性、再現性を向にすることができ
る。(Function) According to the present invention, the electrostatic chuck electrode is integrated with the surface plate portion of the electrode for plasma generation, so that when the electrostatic chuck electrode deteriorates, the entire surface blade portion can be replaced. Unlike the case where the chuck electrode itself is temporarily fixed with an adhesive and made replaceable, peeling of the electrostatic chuck electrode can be reliably prevented since there is no expansion of organic solvents or air bubbles. Thereby, the wafer to be processed in the plasma can be reliably cooled, and the reliability and reproducibility of wafer processing can be improved.
（実施例） 以下、本発明の実施例を図面を参照して説明する。(Example) Embodiments of the present invention will be described below with reference to the drawings.
第１図は、一実施例のドライエツチング装置の概略構成
を示し、第２図はその要部拡大図である。１は真空容器
であり、反応性ガス導入口２と排気口３を有する。真空
容器１には、プラズマを生成するための相対向する第１
．第２の平板電極４．５が設けられている。第２の平板
電極５は実質的に容器の上部蓋を構成するもので、絶縁
リングを介して上端に取付けられている。第２の平板電
極５の大気側には、電磁石または永久磁石からなる磁界
発生装置８が設置されている。これは、第２の平板電極
４の表面付近に電極と平行な磁界を形成するもので、第
１．第２の電極４，５間で放電を起こした時にこの磁界
によってマグネトロン放電を起こし、これにより高密度
プラズマを生成しようとするものである。第１の平板電
極４は、絶縁体６により容器から電気的に絶縁されてい
る。FIG. 1 shows a schematic configuration of a dry etching apparatus according to an embodiment, and FIG. 2 is an enlarged view of the main parts thereof. 1 is a vacuum container, which has a reactive gas inlet 2 and an exhaust port 3. The vacuum vessel 1 includes opposing first and second chambers for generating plasma.
．． A second plate electrode 4.5 is provided. The second plate electrode 5 substantially constitutes the upper lid of the container, and is attached to the upper end via an insulating ring. A magnetic field generating device 8 made of an electromagnet or a permanent magnet is installed on the atmosphere side of the second plate electrode 5. This forms a magnetic field near the surface of the second flat electrode 4 parallel to the electrode. When a discharge occurs between the second electrodes 4 and 5, this magnetic field causes a magnetron discharge, thereby generating high-density plasma. The first flat electrode 4 is electrically insulated from the container by an insulator 6.
容器１および上部の第２の平板電極５を接地して、第１
の平板電極４にはＲＦ電源１０からのＲＦ電力を整合回
路１１を介して印加するようになっている。The container 1 and the upper second flat electrode 5 are grounded, and the first
RF power from an RF power source 10 is applied to the flat plate electrode 4 via a matching circuit 11.
第１の平板電極４は、第２図の拡大図から明らかなよう
に、表面プレート部４１とその下の凹型部４２によって
内部に冷却媒体を流す空間１５を形成しており、表面プ
レート部４１は取り外し自在に構成されている。そして
この表面プレート部４１に静電チャック電極７は接着剤
により一体的に固定されている。より具体的に説明すれ
ば、静電チャック電極７は、第２図のＡ部を拡大した第
３図に示されるように、熱伝導の良好な銅等の金属箔７
、をポリイミド樹脂フィルムなどの絶縁膜７２で覆った
構造を有する。このような静電チャック電極７は、ＡＪ
！、Ｃｕ等により形成された第１の平板電極４の表面プ
レート部４１上にエポキシ樹脂系接着剤を用いてホット
プレスにより強固に固定される。そしてこの静電チャッ
ク電極７上に肢処理半導体ウェーハ９が裁置される。As is clear from the enlarged view of FIG. 2, the first flat electrode 4 has a surface plate portion 41 and a concave portion 42 thereunder to form a space 15 in which a cooling medium flows. is configured to be removable. The electrostatic chuck electrode 7 is integrally fixed to this surface plate portion 41 with an adhesive. To explain more specifically, the electrostatic chuck electrode 7 is made of a metal foil 7 made of copper or the like having good thermal conductivity, as shown in FIG.
, is covered with an insulating film 72 such as a polyimide resin film. Such an electrostatic chuck electrode 7 has an AJ
! , Cu, etc., and is firmly fixed onto the surface plate portion 41 of the first flat plate electrode 4 by hot pressing using an epoxy resin adhesive. Then, a limb-processed semiconductor wafer 9 is placed on this electrostatic chuck electrode 7.
静電チャック電極７は、ウェーハ載置部分が円板状をな
し、その金属箔７１に直流高電圧を印加するための同様
の構造のリード部（図では省略）を有する。このリード
部は第２の電極４の表面から側面を通って外部に導出さ
れ、容器１外部の直流電源１２から所定の直流電圧を印
加できるようになっている。第２の平板電極４の下には
、冷却媒体空間１５に通じる冷却用バイブ１７が接続さ
れていて、ＲＦ電力はこの冷却用バイブ１７を介して第
２の平板電極４に与えられる。The electrostatic chuck electrode 7 has a disk-shaped wafer mounting portion, and has a lead portion (not shown) having a similar structure for applying a DC high voltage to the metal foil 71. This lead portion is led out from the surface of the second electrode 4 through the side surface, so that a predetermined DC voltage can be applied from a DC power source 12 outside the container 1. A cooling vibe 17 communicating with the cooling medium space 15 is connected below the second flat electrode 4 , and RF power is applied to the second flat electrode 4 via this cooling vibe 17 .
静電チャック電極７が固定された第２の平板電極４の周
囲には、電極表面をプラズマから保護するために絶縁保
護膜１６が被覆されている。これは、第２の平板電極４
が熱伝導および電気伝導を考慮してＡＩ！またはＣｕ等
により構成されるが、これらの金属材料はドライエツチ
ングに用いられる反応性ガスによりエツチングされ易い
からである。具体的にこの保護膜１６には、耐エツチン
グ性の高い石英やアルミナ、或いはウェーハを汚染する
心配の少ない窒化シリコン、炭化シリコン等のセラミッ
クス、或いはポリイミドなどの有機樹脂が用いられる。The periphery of the second flat electrode 4 to which the electrostatic chuck electrode 7 is fixed is coated with an insulating protective film 16 to protect the electrode surface from plasma. This is the second flat electrode 4
AI! considering thermal conduction and electrical conduction! Alternatively, it is made of Cu or the like, but these metal materials are easily etched by the reactive gas used for dry etching. Specifically, this protective film 16 is made of quartz or alumina, which have high etching resistance, or ceramics, such as silicon nitride or silicon carbide, which are less likely to contaminate the wafer, or organic resins, such as polyimide.
そして好ましくは、第３図に示されるように保護膜１６
がウェーハ９とオーバーラツプするようにして、第１の
平板電極４が直接プラズマに晒されないようにする。Preferably, a protective film 16 as shown in FIG.
overlaps the wafer 9 to prevent the first flat electrode 4 from being directly exposed to plasma.
半導体ウェーハ９と第２の平板電極４の間は、静電チャ
ックにより吸着した後にも、ミクロにみると第４図に示
すようにそれぞれの面に凹凸があるため、完全に密着す
る訳ではない。そこでこの実施例では、このウェーハ９
と静電チャック電極７の゛間隙部に数ｔｏｒｒ程度のガ
スを導入するように、外部のガス導入装置１３および排
気装置１４を連結している。排気装置１４は、ウェーハ
９の裏面のガス圧力を、容器内真空度に影響を与えない
程度の一定値に保つために設けられている。この様にウ
ェーハ裏面にガスを導入することによって、隙間がある
ことによる熱伝導率の低下を補償して、高い熱伝導率を
得ることができるようになっている。Even after being attracted by the electrostatic chuck, the semiconductor wafer 9 and the second flat electrode 4 do not come into perfect contact because their respective surfaces are uneven as shown in FIG. 4 when viewed microscopically. . Therefore, in this embodiment, this wafer 9
An external gas introduction device 13 and an external exhaust device 14 are connected so as to introduce gas of several torr into the gap between the electrostatic chuck electrode 7 and the electrostatic chuck electrode 7. The exhaust device 14 is provided to maintain the gas pressure on the back surface of the wafer 9 at a constant value that does not affect the degree of vacuum inside the container. By introducing gas to the back surface of the wafer in this manner, it is possible to compensate for the decrease in thermal conductivity due to the presence of gaps and to obtain high thermal conductivity.
この様な構成として、ドライエツチング工程は所定の反
応性ガスをガス導入口２から一定流量で導入した後、排
気口３から排気しながら一定圧力を保ち、ＲＦ電力によ
り二つの平板電極４，５間に高周波放電を起こし、反応
性プラズマを生成して行われる。このとき静電チャック
電極７には、１．５〜３ｋＶの直流高電圧が印加される
。電極間にプラズマが生成されるとこのプラズマを介し
てウェーハ９と第２の平板電極５間の導通がとれ、その
結果ウェーハ９と静電チャック電極７の内部金属箔間に
直流高電圧が印加されて、静電チャックが作用すること
になる。複数回の使用により静電チャック電極が劣化し
た場合には、これを第２の平板電極４の表面プレート部
４１ごと取外して交換する。With such a configuration, in the dry etching process, a predetermined reactive gas is introduced at a constant flow rate from the gas inlet 2, and then a constant pressure is maintained while being exhausted from the exhaust port 3. During this process, a high-frequency discharge is generated to generate reactive plasma. At this time, a DC high voltage of 1.5 to 3 kV is applied to the electrostatic chuck electrode 7. When plasma is generated between the electrodes, conduction is established between the wafer 9 and the second flat electrode 5 through this plasma, and as a result, a high DC voltage is applied between the wafer 9 and the internal metal foil of the electrostatic chuck electrode 7. Then, the electrostatic chuck comes into play. If the electrostatic chuck electrode deteriorates after multiple uses, it is removed along with the surface plate portion 41 of the second flat electrode 4 and replaced.
こうしてこの実施例によれば、粘着剤により静電チャッ
ク電極を取外し可能に平板電極に張付ける従来法と異な
り、静電チャック電極は平板電極の表面プレート部と一
体化されているかろ、変形や熱伝導率の変化がほとんど
ない。このためウェーハの冷却効率は高くしかも安定し
ており、エツチング工程の信頼性、再現性が高いものと
なる。Thus, according to this embodiment, unlike the conventional method in which the electrostatic chuck electrode is removably attached to a flat plate electrode with an adhesive, the electrostatic chuck electrode is integrated with the surface plate portion of the flat plate electrode, and is free from deformation. There is almost no change in thermal conductivity. Therefore, the wafer cooling efficiency is high and stable, and the etching process is highly reliable and reproducible.
また静電チャック電極の粘着剤による張替え作業は習熟
を要し、また寿命が短いために頻繁に張替えなければな
らないのに対し、この実施例では交換作業が楽であり、
しかも交換頻度が少なくて済む。In addition, replacing the electrostatic chuck electrode with adhesive requires skill and requires frequent replacement due to its short lifespan, whereas in this embodiment, replacement work is easy.
Moreover, the frequency of replacement can be reduced.
本発明は上記実施例に限られるものではない。The present invention is not limited to the above embodiments.
例えば実施例では、ドライエツチング装置を説明したが
、プラズマＣＶＤ装置等、同様の条件下でウェーハ処理
を行う他の装置にも本発明を適用することが可能である
。For example, in the embodiment, a dry etching apparatus has been described, but the present invention can also be applied to other apparatuses that process wafers under similar conditions, such as a plasma CVD apparatus.
［発明の効果］
以上述べたように本発明によれば、静電チャック電極部
を改良して信頼性、再現性の高いプラズマ処理を可能と
した半導体ウェーハ処理装置が得られる。[Effects of the Invention] As described above, according to the present invention, a semiconductor wafer processing apparatus can be obtained in which the electrostatic chuck electrode portion is improved and plasma processing with high reliability and reproducibility is possible.
第１図は本発明の一実施例のドライエツチング装置の概
略構成を示す図、第２図はその要部構成を拡大して示す
図、第３図は更に第２図の一部を拡大して示す図、第４
図はウェーハと静電チャック電極の接触部を拡大して示
す図である。
１・・・真空容器、２・・・ガス導入口、３・・・排気
口、４・・・第１の平板電極、４□・・・表面プレート
部、４□・・・凹型部、５・・・第２の平板電極、６・
・・絶縁体、７・・・静電チャック電極、７１・・・金
属箔、７２・・・絶縁膜、８・・・磁界発生装置、９・
・・半導体ウェーハ、１０・・・ＲＦ主電源１１・・・
整合回路、１２・・・直流電源、１３・・・ガス導入装
置、１４・・・排気装置、１５・・・冷却媒体空間、１
６・・・保護膜、１７・・・冷却バイブ。
出願人代理人 弁理士 鈴江武彦
第１図
第３図FIG. 1 is a diagram showing a schematic configuration of a dry etching apparatus according to an embodiment of the present invention, FIG. 2 is an enlarged diagram of the main part configuration, and FIG. 3 is a further enlarged view of a part of FIG. 2. Figure 4
The figure is an enlarged view showing the contact portion between the wafer and the electrostatic chuck electrode. DESCRIPTION OF SYMBOLS 1... Vacuum container, 2... Gas inlet, 3... Exhaust port, 4... First flat electrode, 4□... Surface plate part, 4□... Concave part, 5 ...Second flat plate electrode, 6.
... Insulator, 7... Electrostatic chuck electrode, 71... Metal foil, 72... Insulating film, 8... Magnetic field generator, 9...
...Semiconductor wafer, 10...RF main power supply 11...
Matching circuit, 12... DC power supply, 13... Gas introduction device, 14... Exhaust device, 15... Cooling medium space, 1
6...Protective film, 17... Cooling vibe. Applicant's agent Patent attorney Takehiko Suzue Figure 1 Figure 3
Claims (1)
されたプラズマを生成するための第１、第２の平板電極
と、第１の平板電極上に被処理半導体ウェーハを保持す
るために配置された静電チャック電極とを備えた半導体
ウェーハ処理装置において、前記第１の電極は、表面プ
レート部が取外し可能に構成されており、この表面プレ
ート部の裏面に冷却媒体を流す空間を有し、前記静電チ
ャック電極は前記表面プレート部に接着固定されている
ことを特徴とする半導体ウェーハ処理装置。a vacuum vessel; first and second flat plate electrodes for generating plasma disposed opposite to each other within the vacuum vessel; and disposed for holding a semiconductor wafer to be processed on the first flat plate electrode; In the semiconductor wafer processing apparatus equipped with an electrostatic chuck electrode, the first electrode has a removable surface plate portion, and has a space on the back surface of the surface plate portion through which a cooling medium flows; A semiconductor wafer processing apparatus, wherein the electrostatic chuck electrode is adhesively fixed to the surface plate portion.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023903A JPH01200625A (en) | 1988-02-05 | 1988-02-05 | Semiconductor wafer processing equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP63023903A JPH01200625A (en) | 1988-02-05 | 1988-02-05 | Semiconductor wafer processing equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01200625A true JPH01200625A (en) | 1989-08-11 |
Family
ID=12123426
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP63023903A Pending JPH01200625A (en) | 1988-02-05 | 1988-02-05 | Semiconductor wafer processing equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01200625A (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02270320A (en) * | 1989-04-11 | 1990-11-05 | Hitachi Ltd | Method and device of surface treatment |
| JPH0373453U (en) * | 1989-11-22 | 1991-07-24 | ||
| JPH04271119A (en) * | 1991-02-20 | 1992-09-28 | Shibaura Eng Works Co Ltd | Dry-etching equipment |
| US5250137A (en) * | 1990-07-20 | 1993-10-05 | Tokyo Electron Limited | Plasma treating apparatus |
| WO1995014308A1 (en) * | 1993-11-18 | 1995-05-26 | Ngk Insulators, Ltd. | Electrode for generating plasma, element for burying electrode, and method for manufacturing the electrode and the element |
| US5521790A (en) * | 1994-05-12 | 1996-05-28 | International Business Machines Corporation | Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization |
| US5633073A (en) * | 1995-07-14 | 1997-05-27 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and eutectic connection |
| US5800618A (en) * | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| US5817406A (en) * | 1995-07-14 | 1998-10-06 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and brazing material connection |
| US6025266A (en) * | 1996-09-04 | 2000-02-15 | Nec Corporation | Vacuum film formation method and device |
| JP2017216475A (en) * | 2011-07-01 | 2017-12-07 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Electrostatic chuck assembly |
-
1988
- 1988-02-05 JP JP63023903A patent/JPH01200625A/en active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02270320A (en) * | 1989-04-11 | 1990-11-05 | Hitachi Ltd | Method and device of surface treatment |
| JPH0373453U (en) * | 1989-11-22 | 1991-07-24 | ||
| US5250137A (en) * | 1990-07-20 | 1993-10-05 | Tokyo Electron Limited | Plasma treating apparatus |
| JPH04271119A (en) * | 1991-02-20 | 1992-09-28 | Shibaura Eng Works Co Ltd | Dry-etching equipment |
| US6101969A (en) * | 1992-11-12 | 2000-08-15 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| US5800618A (en) * | 1992-11-12 | 1998-09-01 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| US6197246B1 (en) | 1992-11-12 | 2001-03-06 | Ngk Insulators, Ltd. | Plasma-generating electrode device, an electrode-embedded article, and a method of manufacturing thereof |
| WO1995014308A1 (en) * | 1993-11-18 | 1995-05-26 | Ngk Insulators, Ltd. | Electrode for generating plasma, element for burying electrode, and method for manufacturing the electrode and the element |
| US5521790A (en) * | 1994-05-12 | 1996-05-28 | International Business Machines Corporation | Electrostatic chuck having relatively thick and thin areas and means for uniformly cooling said thick and thin areas during chuck anodization |
| US5633073A (en) * | 1995-07-14 | 1997-05-27 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and eutectic connection |
| US5817406A (en) * | 1995-07-14 | 1998-10-06 | Applied Materials, Inc. | Ceramic susceptor with embedded metal electrode and brazing material connection |
| US6025266A (en) * | 1996-09-04 | 2000-02-15 | Nec Corporation | Vacuum film formation method and device |
| JP2017216475A (en) * | 2011-07-01 | 2017-12-07 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | Electrostatic chuck assembly |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0119253B2 (en) | ||
| JP2680338B2 (en) | Electrostatic chuck device | |
| US5539179A (en) | Electrostatic chuck having a multilayer structure for attracting an object | |
| EP0628989B1 (en) | Sealing device and method useful in semiconductor processing apparatus for bridging materials having a thermal expansion differential | |
| US4565601A (en) | Method and apparatus for controlling sample temperature | |
| JP3208044B2 (en) | Plasma processing apparatus and plasma processing method | |
| JP4935143B2 (en) | Mounting table and vacuum processing apparatus | |
| JPH01312087A (en) | Dry etching device | |
| IE52318B1 (en) | Method and apparatus for dry etching and electrostatic chucking device used therein | |
| JP2007194616A (en) | Susceptor, and method of processing wafer using same | |
| JP3271352B2 (en) | Electrostatic chuck, method of manufacturing the same, substrate processing apparatus, and substrate transfer apparatus | |
| CN102110573A (en) | Plasma processing apparatus | |
| TW200539258A (en) | Wafer stage | |
| JPH01200625A (en) | Semiconductor wafer processing equipment | |
| JPH07335732A (en) | Electrostatic chuck, plasma treatment equipment using electrostatic chuck and its manufacture | |
| JP2767282B2 (en) | Substrate holding device | |
| JPH10154745A (en) | Electrostatic attracting device | |
| JP2003282692A (en) | Substrate carrying tray and substrate processing apparatus using this tray | |
| JP4456218B2 (en) | Plasma processing equipment | |
| JP4602528B2 (en) | Plasma processing equipment | |
| JP3231202B2 (en) | Plasma processing equipment | |
| JP2886878B2 (en) | Vacuum processing equipment | |
| JPH0269956A (en) | Method and apparatus for electrostatically chucking | |
| JPH06124998A (en) | Plasma process equipment | |
| JPH1116996A (en) | Electrostatic chuck equipment and mounting stand |