JPH01180960A - Metallic rh for vacuum deposition - Google Patents
Metallic rh for vacuum depositionInfo
- Publication number
- JPH01180960A JPH01180960A JP216988A JP216988A JPH01180960A JP H01180960 A JPH01180960 A JP H01180960A JP 216988 A JP216988 A JP 216988A JP 216988 A JP216988 A JP 216988A JP H01180960 A JPH01180960 A JP H01180960A
- Authority
- JP
- Japan
- Prior art keywords
- less
- 1ppm
- elements
- ppm
- vacuum deposition
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001771 vacuum deposition Methods 0.000 title claims abstract description 25
- 229910052793 cadmium Inorganic materials 0.000 claims abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 4
- 229910052751 metal Inorganic materials 0.000 claims description 15
- 239000002184 metal Substances 0.000 claims description 15
- 238000009835 boiling Methods 0.000 claims description 13
- 229910052787 antimony Inorganic materials 0.000 claims description 4
- 229910052785 arsenic Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- 229910052748 manganese Inorganic materials 0.000 claims description 4
- 229910052700 potassium Inorganic materials 0.000 claims description 4
- 229910052712 strontium Inorganic materials 0.000 claims description 4
- 229910052725 zinc Inorganic materials 0.000 claims description 4
- 229910052788 barium Inorganic materials 0.000 claims description 3
- 229910052745 lead Inorganic materials 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- 229910052718 tin Inorganic materials 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims 1
- 238000001704 evaporation Methods 0.000 abstract description 9
- 230000008020 evaporation Effects 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 abstract description 7
- 229910052749 magnesium Inorganic materials 0.000 abstract description 3
- 230000001105 regulatory effect Effects 0.000 abstract 2
- 238000007738 vacuum evaporation Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000000758 substrate Substances 0.000 description 2
- 235000014676 Phragmites communis Nutrition 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052791 calcium Inorganic materials 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
Landscapes
- Physical Vapour Deposition (AREA)
Abstract
Description
【発明の詳細な説明】
（産業上の利用分野）
本発明は、リードスイッチ用接点材料などに使用される
真空蒸着用Ｒｈ金属に関する。DETAILED DESCRIPTION OF THE INVENTION (Industrial Application Field) The present invention relates to a Rh metal for vacuum deposition, which is used as a contact material for a reed switch.
（従来の技術とその問題点）
従来よりＲｈは、通常９９．９５％のものが純Ｒｈとし
て、真空蒸着材料に使用されている。(Prior Art and its Problems) Conventionally, Rh has been used in vacuum evaporation materials, usually with 99.95% pure Rh.
ところで、このＲｈの真空蒸着材料の中には不純物とし
て多数の元素が微量存在しているので、真空蒸着時に溶
融状態のＲｈが突沸したり、飛散したりして、溶融Ｒｈ
が基板に付着し、平滑な膜が得られないものである。By the way, this Rh vacuum evaporation material contains a small amount of many elements as impurities, so molten Rh may bump or scatter during vacuum evaporation, resulting in molten Rh
adheres to the substrate, making it impossible to obtain a smooth film.
これはＲｈの融点が２２８℃であるが、不純物として微
量存在する多数の元素の沸点は殆んどそれ以下である為
、溶融Ｒｈ中ではそれらの元素が選択的にしかも突沸的
に蒸発するからである。This is because the melting point of Rh is 228°C, but the boiling points of many elements that exist in small amounts as impurities are almost all lower than that, so those elements evaporate selectively and bumpingly in molten Rh. It is.
（発明の目的）
本発明は、上記問題点を解決すべ（なされたもので、不
純物として存在する多数の元素の含有量を少な（して、
真空蒸着時それらの元素の蒸発を少なくし、溶融Ｒｈが
突沸したり、飛散したりするのを減少するようにした真
空蒸着用Ｒｈ金属を提供することを目的とするものであ
る。(Objective of the Invention) The present invention has been made to solve the above problems, and to reduce the content of many elements that exist as impurities.
The object of the present invention is to provide a Rh metal for vacuum deposition, which reduces evaporation of these elements during vacuum deposition and reduces bumping and scattering of molten Rh.
（問題点を解決するための手段）
上記問題点を解決するための本発明の真空蒸着用Ｒｈ金
属は、重量比で、Ｃｄが１ＰＰＭ以下、Ａｓが１ＰＰＭ
以下、Ｎａか１ＰＰＭ以下、Ｋが１ＰＰＭ以下、Ｚｎが
１ＰＰＭ以下、Ｍｇが３ＰＰＭ以下、Ｓｒが１ＰＰＭ以
下、Ｃａが３ＰＰＭ以下、Ｂｉが１ＰＰＭ以下、Ｓｂが
１ＰＰＭ以下、Ｂａが１ＰＰＭ以下、Ｐｂが１ＰＰＭ以
下、Ａｎが２０ＰＰＭ以下、Ｉｎが１ＰＰＭ以下、Ｍｎ
が１ＰＰＭ以下、Ａｇが１ＰＰＭ以下、Ｓｉが１０ＰＰ
Ｍ以下、ＳｎがＩ Ｐ Ｐ Ｍ以下で、これら元素の総
量が３０ＰＰＭ以下であり、且つＲｈの純度が重量比で
９９．９８％以上であることを特徴とするものである。(Means for Solving the Problems) In order to solve the above problems, the Rh metal for vacuum deposition of the present invention has a weight ratio of Cd of 1 PPM or less and As of 1 PPM.
Below, Na is 1PPM or less, K is 1PPM or less, Zn is 1PPM or less, Mg is 3PPM or less, Sr is 1PPM or less, Ca is 3PPM or less, Bi is 1PPM or less, Sb is 1PPM or less, Ba is 1PPM or less, Pb is 1PPM Below, An is 20 PPM or less, In is 1 PPM or less, and Mn is
is 1PPM or less, Ag is 1PPM or less, Si is 10PP
M or less, Sn is I P P M or less, the total amount of these elements is 30 PPM or less, and the purity of Rh is 99.98% or more by weight ratio.
また、本発明の真空蒸着用Ｒｈ金属は、沸点が１００℃
以下のＣｄ、Ａｓ、Ｎａ、Ｋ、Ｚｎの元素が総量で重量
比３ＰＰＭ以下であることも特徴である。Furthermore, the Rh metal for vacuum deposition of the present invention has a boiling point of 100°C.
Another feature is that the total amount of the following elements Cd, As, Na, K, and Zn is 3 PPM or less by weight.
さらに本発明の真空蒸着用Ｒｈ金属は、沸点が１０００
°０〜２００℃のＭｇ、Ｓｒ、Ｃａ、Ｂ ｉ、Ｓｂ、Ｂ
ａ、Ｐｂの元素が総量で重量比７ＰＰＭ以下であること
も特徴である。Furthermore, the Rh metal for vacuum deposition of the present invention has a boiling point of 1000
°0~200℃ Mg, Sr, Ca, Bi, Sb, B
Another feature is that the total amount of the elements a and Pb is 7 PPM or less by weight.
さらにまた本発明の真空萎着用Ｒｈ金属は、沸点が２０
０℃を超えるＡｌ、Ｉｎ、Ｍｎ、Ａｇ、Ｓｉ、Ｓｎの元
素が総量で重量比２０ＰＰＭ以下であることも特徴であ
る。Furthermore, the Rh metal for vacuum shrinkage of the present invention has a boiling point of 20
Another feature is that the total amount of the elements Al, In, Mn, Ag, Si, and Sn whose temperature exceeds 0° C. is 20 PPM or less by weight.
本発明の真空蒸着用Ｒｈ金属に於いて、各元素の重量比
の上限を前述の如く限定した理由は、各元素の重量比が
上限を超えると、真空蒸着時各元素が突沸的に蒸発する
為である。また各元素の総量を３０ＰＰＭ以下に限定し
た理由は、３０ＰＰＭを超えると真空蒸着時含有する元
素の蒸発が極端に増加するからである。The reason for limiting the upper limit of the weight ratio of each element in the Rh metal for vacuum deposition of the present invention as described above is that if the weight ratio of each element exceeds the upper limit, each element evaporates in a bumping manner during vacuum deposition. It is for this purpose. Further, the reason why the total amount of each element is limited to 30 PPM or less is that if it exceeds 30 PPM, the evaporation of the elements contained during vacuum deposition will increase dramatically.
沸点が１００℃以下の蒸気圧の高いＣｄ、Ａｓ、Ｎａ、
Ｋ、Ｚｎの元素の総量を重量比で３ＰＰＭ以下にした理
由は、真空蒸着時それらの元素の蒸発をなくし、溶融Ｒ
ｈの突沸を減少するためである。Cd, As, Na, with a boiling point of 100°C or less and a high vapor pressure.
The reason why the total amount of K and Zn elements was set to 3 PPM or less by weight was to eliminate evaporation of these elements during vacuum deposition, and to reduce the molten R
This is to reduce bumping of h.
沸点が１００℃〜２００℃の蒸気圧の低いＭｇ、Ｓｒ、
Ｃａ、Ｂｉ、Ｓｂ、Ｂａ、Ｐｂの元素の総量を重量比で
７ＰＰＭ以下にした理由は、真空蒸着時それらの元素の
蒸発を少なくし、溶融Ｒｈの突沸を減少する為である。Mg, Sr, with a boiling point of 100°C to 200°C and low vapor pressure;
The reason why the total amount of the elements Ca, Bi, Sb, Ba, and Pb is set to 7 PPM or less by weight is to reduce evaporation of these elements during vacuum deposition and to reduce bumping of molten Rh.
沸点が２００℃を超える蒸気圧の極めて低いＡｌ、Ｉｎ
、Ｍｎ、Ａｇ、Ｓ ｉ、Ｓｎの元素の総量を重量比で２
０ＰＰＭ以下にした理由は、真空蒸着時それらの元素の
蒸発を少なくし、溶融Ｒｈの突沸を減少する為である。Al, In with a boiling point exceeding 200°C and extremely low vapor pressure
, Mn, Ag, Si, and Sn in a weight ratio of 2
The reason why it is set to 0 PPM or less is to reduce evaporation of those elements during vacuum deposition and to reduce bumping of molten Rh.
Ｒｈを重量比で９９．９８％としたのは、Ｒｈの純度を
より高める為である。The reason for setting Rh to 99.98% by weight is to further increase the purity of Rh.
（実施例）
本発明による真空蒸着用Ｒｈ金属の実施例及び比較例に
ついて説明する。不純物として多数の元素を含有するＲ
ｈを予めアーク溶解炉や電子ビーム溶解炉で５分以上溶
解して、Ｒｈより蒸気圧の高い各元素を選択的に蒸発さ
せて、下記の表に示す成分組成の実施例１〜８及び比較
例１〜４の真空蒸着用Ｒｈ金属を得た。(Example) Examples and comparative examples of Rh metal for vacuum deposition according to the present invention will be described. R containing many elements as impurities
Rh was preliminarily melted in an arc melting furnace or an electron beam melting furnace for 5 minutes or more to selectively evaporate each element with a higher vapor pressure than Rh. Rh metals for vacuum deposition of Examples 1 to 4 were obtained.
これら実施例及び比較例の真空蒸着用Ｒｈ金属を基板に
真空蒸着した処、当初の１分間で下記の表の右端欄に示
すような回数の突沸かあった。When the Rh metals for vacuum evaporation of these Examples and Comparative Examples were vacuum evaporated onto substrates, bumping occurred as many times as shown in the right column of the table below in the first minute.
（以下余白）
上記の表で明らかなように比較例１〜４の真空蒸着用Ｒ
ｈ金属は、真空蒸着時の微量に含有する元素の蒸発によ
る溶融Ｒｈの突沸回数が３〜５回と多いのに対し、実施
例１〜８の真空蒸着用Ｒｈ金属は、真空蒸着時の微量に
含有する元素の蒸発による溶融Ｒｈの突沸回数が０〜１
回と極めて少ないことが判る。これはひとえにＲｈ中に
含有するＣｄ、Ａｓ、Ｎａ、Ｋ、Ｚｎの各々が１ＰＰＭ
以下で、Ｍｇ、Ｃａが３ＰＰＭ以下、Ｓｒ、Ｂｉ、Ｓｂ
、Ｂａ、Ｐｂの各々が１ＰＰＭ以下で、ＡＩ！。(Left below) As is clear from the table above, R for vacuum deposition in Comparative Examples 1 to 4
In the case of the Rh metal, the number of bumping times of the molten Rh due to the evaporation of elements contained in trace amounts during vacuum deposition is as high as 3 to 5 times, whereas the Rh metals for vacuum deposition in Examples 1 to 8 have a trace amount of bumping during vacuum deposition. The number of bumping times of molten Rh due to evaporation of elements contained in is 0 to 1
It turns out that there are very few times. This simply means that each of Cd, As, Na, K, and Zn contained in Rh is 1 PPM.
Below, Mg, Ca is 3 PPM or less, Sr, Bi, Sb
, Ba, and Pb are each 1 PPM or less, and AI! .
２０ＰＰＭ以下、ＳＳｉ１０ＰＰ、Ｉ ｎ、Ｍｎ、Ａｇ
、Ｓｎの各々か１ＰＰＭであり、これら元素の総量が３
０ＰＰＭ以下であるからである。20PPM or less, SSi10PP, In, Mn, Ag
, Sn is 1 PPM, and the total amount of these elements is 3
This is because it is 0 PPM or less.
そして沸点１００℃以下の元素の総量が３ＰＰＭ以下、
沸点１０００〜２０００’Ｃの元素の総量が７ＰＰＭ以
下、沸点２００℃以上の元素の総量か２０ＰＰＭ以下で
あるからである。and the total amount of elements with a boiling point of 100°C or less is 3 PPM or less,
This is because the total amount of elements with a boiling point of 1000 to 2000'C is 7 PPM or less, and the total amount of elements with a boiling point of 200C or more is 20 PPM or less.
（発明の効果）
以上の説明で判るように本発明の真空蒸着用Ｒｈ金属は
、不純物として存在する多数の元素の含有量を少なくし
であるので、真空蒸着時それら元素の蒸発が少なく、溶
融Ｒｈの突沸や飛散が著しく減少し、平滑な膜を形成で
きるという効果がある。(Effects of the Invention) As can be seen from the above explanation, the Rh metal for vacuum deposition of the present invention has a reduced content of many elements that exist as impurities, so there is less evaporation of those elements during vacuum deposition, and it is melted. Bumping and scattering of Rh are significantly reduced, and a smooth film can be formed.
出願人 田中貴金属工業株式会社Applicant: Tanaka Kikinzoku Kogyo Co., Ltd.
Claims (4)
以下、Ｎａが１ＰＰＭ以下、Ｋが１ＰＰＭ以下、Ｚｎが
１ＰＰＭ以下、Ｍｇが３ＰＰＭ以下、Ｓｒが１ＰＰＭ以
下、Ｃａが３ＰＰＭ以下、Ｂｉが１ＰＰＭ以下、Ｓｂが
１ＰＰＭ以下、Ｂａが１ＰＰＭ以下、Ｐｂが１ＰＰＭ以
下、Ａｌが２０ＰＰＭ以下、Ｉｎが１ＰＰＭ以下、Ｍｎ
が１ＰＰＭ以下、Ａｇが１ＰＰＭ以下、Ｓｉが１０ＰＰ
Ｍ以下、Ｓｎが１ＰＰＭ以下で、これら元素の総量が３
０ＰＰＭ以下であり、且つＲｈの純度が重量比で９９．
９８％以上であることを特徴とする真空蒸着用Ｒｈ金属
。(1) In terms of weight ratio, Cd is 1 PPM or less, As is 1 PPM
Below, Na is 1PPM or less, K is 1PPM or less, Zn is 1PPM or less, Mg is 3PPM or less, Sr is 1PPM or less, Ca is 3PPM or less, Bi is 1PPM or less, Sb is 1PPM or less, Ba is 1PPM or less, Pb is 1PPM or less. Below, Al is 20PPM or less, In is 1PPM or less, Mn
is 1PPM or less, Ag is 1PPM or less, Si is 10PP
M or less, Sn is 1 PPM or less, and the total amount of these elements is 3
0 PPM or less, and the purity of Rh is 99.
98% or more Rh metal for vacuum deposition.
ａ、Ｋ、Ｚｎの元素が総量で３ＰＰＭ以下であることを
特徴とする特許請求の範囲第１項記載の真空蒸着用Ｒｈ
金属。(2) Cd, As, N with a boiling point of 100°C or less in terms of weight ratio
Rh for vacuum deposition according to claim 1, characterized in that the total amount of the elements a, K, and Zn is 3 PPM or less.
metal.
、Ｓｒ、Ｃａ、Ｂｉ、Ｓｂ、Ｂａ、Ｐｂの元素が総量で
７ＰＰＭ以下であることを特徴とする特許請求の範囲第
１項記載の真空蒸着用Ｒｈ金属。(3) Mg with a boiling point of 1000°C to 2000°C by weight
, Sr, Ca, Bi, Sb, Ba, and Pb in a total amount of 7 PPM or less.
、Ｍｎ、Ａｇ、Ｓｉ、Ｓｎの元素が総量で２０ＰＰＭ以
下であることを特徴とする特許請求の範囲第１項記載の
真空蒸着用Ｒｈ金属。(4) Al, In with a boiling point exceeding 2000°C in terms of weight ratio
, Mn, Ag, Si, and Sn in a total amount of 20 PPM or less.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP216988A JPH01180960A (en) | 1988-01-08 | 1988-01-08 | Metallic rh for vacuum deposition |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP216988A JPH01180960A (en) | 1988-01-08 | 1988-01-08 | Metallic rh for vacuum deposition |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01180960A true JPH01180960A (en) | 1989-07-18 |
Family
ID=11521863
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP216988A Pending JPH01180960A (en) | 1988-01-08 | 1988-01-08 | Metallic rh for vacuum deposition |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01180960A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100737969B1 (en) * | 2002-02-20 | 2007-07-12 | 마츠시다 덴코 가부시키가이샤 | Plasma processing device and plasma processing method |
-
1988
- 1988-01-08 JP JP216988A patent/JPH01180960A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100737969B1 (en) * | 2002-02-20 | 2007-07-12 | 마츠시다 덴코 가부시키가이샤 | Plasma processing device and plasma processing method |
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