JPH01138781A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPH01138781A
JPH01138781A JP29812687A JP29812687A JPH01138781A JP H01138781 A JPH01138781 A JP H01138781A JP 29812687 A JP29812687 A JP 29812687A JP 29812687 A JP29812687 A JP 29812687A JP H01138781 A JPH01138781 A JP H01138781A
Authority
JP
Japan
Prior art keywords
semiconductor laser
face
stem
laser chip
tapered
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29812687A
Other languages
Japanese (ja)
Inventor
Takeshi Yamawaki
健 山脇
Akihiro Shima
島 顕洋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP29812687A priority Critical patent/JPH01138781A/en
Publication of JPH01138781A publication Critical patent/JPH01138781A/en
Pending legal-status Critical Current

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  • Semiconductor Lasers (AREA)

Abstract

PURPOSE:To compensate easily the deviation of laser rays from an optical axis in an assembly process by a method wherein a heat sink provided with a face, which is obliquely cut to enable the bonded surface of the sink with a primary face of a stem not to form a right angle with a semiconductor laser mounting face, is employed. CONSTITUTION:A tapered block 6 is provided, where a submount 3 and a semiconductor laser chip 1 are mounted on a face of the block 6 which makes a oblique angle with the tapered face and the tapered face of the tapered block 6 is bonded to the primary face 4 of the stem 5 so as to make a light emitting point of the semiconductor laser chip 1 be situated at the center of the stem 5, so that laser rays can be taken out perpendicularly to the stem primary face 4 even if the laser chip 1, which does not emit laser rays in parallel with the bonded face of the semiconductor laser chip 1, is used. Therefore, the deviation of laser rays from an optical axis can be decreased and a device of this design can be improved in a coupling efficiency with an external optical system. So that, a semiconductor laser device can be decreased in a laser ray output, consequently in a heat release by operating it with small current, and improved in reliability.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体レーザ装置に関するものである。[Detailed description of the invention] [Industrial application field] The present invention relates to a semiconductor laser device.

〔従来の技術〕[Conventional technology]

第61図は従来の組立方法の1例を示した図で。 FIG. 61 is a diagram showing an example of a conventional assembly method.

(a)は斜視図、(b)は側面図である。i3Qにおい
て(1)は半導体レーザチップ、(2)はこの半導体レ
ーザチップ(ユ)を取付けるヒートシンクであって、こ
の従来例では直方不のブロック、+31は半導体レーザ
チップ(1)とブロック(2+の間にはさむサブマウン
ト、、 +41は半導体レーザチップ(1)、およびサ
ブマウント(3)を取付けたブロック面と直角の面を接
着するステム主面4(5)はステム主面を有するステム
本体である。
(a) is a perspective view, and (b) is a side view. In i3Q, (1) is a semiconductor laser chip, (2) is a heat sink to which this semiconductor laser chip (YU) is attached, and in this conventional example, a rectangular block, +31 is a semiconductor laser chip (1) and a block (2+). The submount sandwiched between them, +41 is the semiconductor laser chip (1), and the main surface 4 (5) of the stem is attached to the surface perpendicular to the block surface on which the submount (3) is attached. be.

次に従来技術の製造方法について説明する。ブロック(
2!の1+面二の 線に沿ってサブマウント(3)、半
導体レーザチップ(11の順に端面を合わせて取り付け
、半導体レーザチップ(11の放熱体とする。
Next, a conventional manufacturing method will be explained. block(
2! The submount (3) and the semiconductor laser chip (11) are attached in this order along the 1+surface 2 line with their end faces aligned, and the semiconductor laser chip (11) is used as a heat sink.

サブマウント(3)は半Ij!不レーザチップ(1)と
ブロック(21の熱膨張係数の差から生じる歪を緩和す
るためにはさんだもので、サブマウント131として軟
質合金半田を用いて歪の緩和を行う方法もめる。次に2
半導体レーザチップ(1)のレーザ光の出射方向は、外
部光学系との結合効率を高めるため、ステム本体(51
の中心軸に一致させる必要かめる。そのため半導体レー
ザチップ(1)、お工びサブマウント(3)を取付けた
ブロック(21の面をステム主thI+41に対して垂
直に置き、半4本レーザチップ(1)の発光点がステム
木本の中心軸に一致するようにブロックを接着していた
Submount (3) is half Ij! It is sandwiched between the non-laser chip (1) and the block (21) in order to alleviate the strain caused by the difference in thermal expansion coefficient, and a method of relaxing the strain by using soft alloy solder as the submount 131 will also be described.Next, 2
The emission direction of the laser beam of the semiconductor laser chip (1) is set in the direction of the stem body (51) in order to increase the coupling efficiency with the external optical system.
It is necessary to match the central axis of the bite. Therefore, the block (21) with the semiconductor laser chip (1) and the submount (3) attached is placed perpendicular to the stem main thI+41, and the light emitting points of the half-four laser chips (1) are placed on the stem wood. The blocks were glued to match the central axis of the.

〔発明が解決しよりとする問題点〕[Problems that the invention helps solve]

従来の半導体レーザ装置は以上のように組立てられてい
るので、半導体レーザチップ(1)はステム主面(41
に対して常に垂直に取り付けられていた。
Since the conventional semiconductor laser device is assembled as described above, the semiconductor laser chip (1) is attached to the main surface of the stem (41
It was always mounted perpendicular to the

このため、レーザ光が半導体レーザチップfi+の取り
付は面と平行に出射しないチップにおいては。
For this reason, when the semiconductor laser chip fi+ is mounted, the laser light does not emit parallel to the surface.

ステム主面(4)に対してレーザ光を垂直に取り出せな
いといり問題点があった。このことは外部光学系との結
合効率を低下させるとともに、非点隔差が大きくなると
いう問題点を引き起こすことにもなる。
There was a problem in that the laser beam could not be extracted perpendicularly to the main surface (4) of the stem. This causes a problem in that the coupling efficiency with the external optical system is reduced and the astigmatism difference becomes large.

この発明は上記のような問題点を解消し、レーザ光か半
導体レーザチップの取り付は面と平行に出射しない半導
体レーザチップにおいても、ステム主面に対し垂直にレ
ーザ光を取り出す半導体レーザ装置を得ることを目的と
する。
This invention solves the above-mentioned problems, and provides a semiconductor laser device that outputs laser light perpendicular to the main surface of the stem, even for semiconductor laser chips that do not emit laser light parallel to the surface. The purpose is to obtain.

〔問題点を解決するための手段〕[Means for solving problems]

すなわち、この発明はステム主面との接着面を有し2そ
の接着面と、半導体レーザチップを取り付ける面が垂直
とならないように斜めにカットした面をもつヒートシン
クを用いて、ステムに接着したものである。
That is, the present invention is a heat sink that is bonded to the stem using a heat sink that has an adhesive surface with the main surface of the stem and a surface that is cut diagonally so that the adhesive surface and the surface on which the semiconductor laser chip is attached are not perpendicular to each other. It is.

〔作 用〕[For production]

したかつてこの発明における斜めにカットした面をもつ
ヒートシンクは、−万の面がステム主面に接着され、こ
の面と斜めの角度をもつ面に半導体レーザチップを取り
付けることにより半Ij!本レーザチップの取り付は面
と平行にレーザ光を出射しない半導体レーザチップにお
いても、ステム主面に対して垂直にレーザ光を取り出す
ことができる。
In the heat sink with an obliquely cut surface according to the present invention, the -10,000 side is glued to the main surface of the stem, and a semiconductor laser chip is attached to a surface that is at an angle to this side, thereby achieving a half-Ij! The mounting of this laser chip allows laser light to be extracted perpendicularly to the main surface of the stem even in a semiconductor laser chip that does not emit laser light parallel to the surface.

〔発明の実施列〕[Implementation sequence of the invention]

以F、この発明の1実施列を図について説明する。第1
図(a)は斜視図、第1図(b)は側面図である。
Hereinafter, one embodiment of the invention will be described with reference to the figures. 1st
FIG. 1(a) is a perspective view, and FIG. 1(b) is a side view.

図において11)および(;3)ないしく5)は第6南
に示した従来例と同等のものである。(6)は本発明の
特徴を示す斜めにカットされた面をもつヒートシンクで
ありて、本実施例では直方体ブロックの1面を斜めにカ
ットしたテーパ付ブロックである。この斜めにカットし
た角度は半導体レーザチップ(1)の取り付は面と、そ
のレーザ出射光とのなす角度(光軸との角度ず2−L 
ffi: )に相当し、その向きは互いに相殺し合9向
きとする。
In the figure, 11) and (;3) to 5) are equivalent to the conventional example shown in the sixth south. (6) is a heat sink having an obliquely cut surface, which is a feature of the present invention, and in this embodiment, it is a tapered block in which one side of a rectangular parallelepiped block is cut obliquely. This diagonally cut angle is the angle between the mounting surface of the semiconductor laser chip (1) and its laser beam (the angle with the optical axis is 2-L).
ffi: ), and the directions cancel each other out, resulting in nine directions.

この発明によりば2テーパ付ブロツク(6)において、
テーパ面と斜めの角度をなす而にサブマウント(3)及
び半導体レーザチップ(1)を取り付け、その半導体レ
ーザチップfi+の発光点がステムの中心に位置するよ
うにテーパ付ブロック(6)のテーパ面をステム主面(
4)に接着するため、レーザ光か半導体レーザチップ(
1)の取り付は面と平行に出射しないチップにおいても
、そのレーザ光をステム主面(4)に対して垂[σに取
り出すことができる。このため、従来の学惇本レーザ装
置に比べて、レーザ光の光軸からの角度ずれを低減させ
、外部光学系との結合効率を高めることができる。この
結合効率を誦めることによりて、半4本レーザ装置の出
射光量を低減することができ、低電流動作で半導体レー
ザチップの発熱を減らし、信頼性を向J:きせる?、S
とができる。
According to this invention, in the two-tapered block (6),
The submount (3) and the semiconductor laser chip (1) are attached to form an oblique angle with the tapered surface, and the taper of the tapered block (6) is adjusted so that the light emitting point of the semiconductor laser chip fi+ is located at the center of the stem. The main surface of the stem (
4) In order to bond to the laser beam or semiconductor laser chip (
Mounting 1) allows the laser beam to be extracted perpendicularly [σ] to the stem main surface (4) even in a chip that does not emit light parallel to the surface. Therefore, compared to the conventional laser device, it is possible to reduce the angular deviation of the laser beam from the optical axis and increase the coupling efficiency with the external optical system. By adjusting this coupling efficiency, it is possible to reduce the amount of light emitted by the half-four laser device, reduce heat generation of the semiconductor laser chip with low current operation, and improve reliability. , S
I can do it.

なお、上記W施例ではテーパ付ブロック(6)のテーパ
面をステム主面f41 K g 着したが、このテーパ
面と半4 V、iレーザ出射光(1)kおよびサブマウ
ント(31を取り付けた面とを入れ替えてもよい。
In the above W example, the tapered surface of the tapered block (6) was attached to the main main surface of the stem f41 K g , but the tapered surface and the semi-4 V, i laser emitted light (1) k and submount (31) were attached. You may also replace the other side.

また、特許清水範囲i1′g5の斜めにカットされた面
をもクヒートシンク(7)はブロックでめる必要はなく
、ステム主面(41と接着面と半導体レーザチップを取
り付ける面か斜めの角度を有しているヒートシンクであ
ればどんな形でもよい(第21図)。
In addition, it is not necessary to attach the heat sink (7) to the diagonally cut surface of the patent Shimizu range i1'g5 with a block, and the main surface of the stem (41, the adhesive surface, and the surface on which the semiconductor laser chip is attached) can be attached at an oblique angle. Any shape may be used as long as it has a heat sink (FIG. 21).

J:記実施例では、従来例とともにサブマウント(31
を用いたが半導体レーザチップ(11を直接ヒートシン
クに取り付けてもよい。
J: In the above embodiment, a submount (31
However, the semiconductor laser chip (11) may be directly attached to the heat sink.

しかしサブマウント+31を用いた構成において、第4
図に示すように接着面か斜めにカットされたサブマウン
ト(8)を用いても同様の効果を奏する。
However, in a configuration using submount +31, the fourth
A similar effect can be obtained by using a submount (8) whose adhesive surface is cut obliquely as shown in the figure.

さらに第5図に示すように、ヒートシンクがステム木本
と一体になった場合においてもステム主面(4)と半導
体レーザチップ(1)を取り付ける面が斜めの角度であ
れは同様の効果を奏する。
Furthermore, as shown in Figure 5, even when the heat sink is integrated with the stem wood, the same effect can be achieved if the main surface of the stem (4) and the surface on which the semiconductor laser chip (1) is attached are at an oblique angle. .

〔発明の効果〕〔Effect of the invention〕

以りのようにこの発明に工れば、斜めにカットした曲を
もつ、ヒートシンクを用いることにより、組立工程にお
いて各易にレーザ光の元軸との角度ずれを補償すること
ができる効果かある。
As described above, this invention has the effect of easily compensating for the angular deviation from the original axis of the laser beam during the assembly process by using a heat sink with a diagonally cut curve. .

【図面の簡単な説明】[Brief explanation of the drawing]

第1図(a)はこの発明の一実施例による半保体レーザ
装置の製造万云を示す斜視図、第1図(b)はその側面
図、第2図ないし第5図はこの発明の池の実1M例の1
FIIj面図、第6図(a)は従来の例を下す斜視図、
第6図(b)はそのν1j面図である。 図において(1)は早導本レーザチップ、(3)はサブ
マウント、(41はステム主面、(5)はステム本体、
(6)はテーパ付ブロック、(7)は斜めにカットされ
た面をもつヒートシンク、(8)は斜めにカットされた
面をもつサブマウントである。なお、図中、同一符号は
同一、又は相当部分を示す。 代 理 人    大  岩  増  雄第1図 第2図 第3図 第4図 第5図 第6図 悟) 手続補正書(自発) !、小事件表示   特願昭62−298126号3、
補正をする者 事件との関係  特許出願人 住 所    東京都千代田区丸の内二丁目2番3号名
 称  (601)三菱電機株式会社代表者志岐守哉 4、代′理人 住 所     東京都千代田区丸の内二丁目2番3号
三菱電機株式会社内 ・63.2. ” ″ − 5、補正の対象 明細書の発明の詳細な説明の欄及び図面6、補正の内容 +1)図面中、第2〜5図を別紙のとおり訂正する。 (2)明細書をつぎのとおり訂正する。
FIG. 1(a) is a perspective view showing the manufacturing process of a semiconductive laser device according to an embodiment of the present invention, FIG. 1(b) is a side view thereof, and FIGS. Ikenomi 1M example 1
FIG. 6(a) is a perspective view of the conventional example,
FIG. 6(b) is its ν1j plane view. In the figure, (1) is the fast guide laser chip, (3) is the submount, (41 is the main surface of the stem, (5) is the stem body,
(6) is a tapered block, (7) is a heat sink with an obliquely cut surface, and (8) is a submount with an obliquely cut surface. In addition, in the figures, the same reference numerals indicate the same or equivalent parts. Agent Masuo Oiwa (Fig. 1, Fig. 2, Fig. 3, Fig. 4, Fig. 5, Fig. 6 Satoru) Procedural amendment (voluntary)! , small case display patent application No. 62-298126 3,
Relationship with the case of the person making the amendment Patent Applicant Address 2-2-3 Marunouchi, Chiyoda-ku, Tokyo Name (601) Mitsubishi Electric Corporation Representative Moriya Shiki 4, Representative Address Chiyoda-ku, Tokyo Marunouchi 2-2-3 Mitsubishi Electric Corporation 63.2. `` '' - 5. Detailed description of the invention in the specification to be amended and drawing 6. Contents of the amendment + 1) Figures 2 to 5 of the drawings are corrected as shown in the attached sheet. (2) The specification shall be amended as follows.

Claims (1)

【特許請求の範囲】[Claims] (1)半導体レーザチップと上記半導体レーザチツプを
接着するヒートシンクと上記ヒートシンクの池の面を接
着するステム主面を有するステムから構成される半導体
レーザ装置において、上記ヒートシンクが上記半導体レ
ーザチップから出射されるレーザ光のステム主面に対す
る光軸との角度ずれを補償するように斜めにカットした
面をもつことを特徴とする半導体レーザ装置。
(1) In a semiconductor laser device comprising a semiconductor laser chip, a heat sink that adheres the semiconductor laser chip, and a stem having a main surface of the stem that adheres a pond surface of the heat sink, the heat sink is emitted from the semiconductor laser chip. A semiconductor laser device characterized by having a surface cut diagonally so as to compensate for an angular deviation between the optical axis of the laser beam and the main surface of the stem.
JP29812687A 1987-11-25 1987-11-25 Semiconductor laser device Pending JPH01138781A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP29812687A JPH01138781A (en) 1987-11-25 1987-11-25 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29812687A JPH01138781A (en) 1987-11-25 1987-11-25 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPH01138781A true JPH01138781A (en) 1989-05-31

Family

ID=17855514

Family Applications (1)

Application Number Title Priority Date Filing Date
JP29812687A Pending JPH01138781A (en) 1987-11-25 1987-11-25 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPH01138781A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174374A (en) * 1998-12-08 2000-06-23 Rohm Co Ltd Laser unit and insulating block
JP2006196505A (en) * 2005-01-11 2006-07-27 Mitsubishi Electric Corp Semiconductor laser device
JP2017135158A (en) * 2016-01-25 2017-08-03 三菱電機株式会社 Optical semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000174374A (en) * 1998-12-08 2000-06-23 Rohm Co Ltd Laser unit and insulating block
JP2006196505A (en) * 2005-01-11 2006-07-27 Mitsubishi Electric Corp Semiconductor laser device
JP2017135158A (en) * 2016-01-25 2017-08-03 三菱電機株式会社 Optical semiconductor device

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