JP7469625B2 - Plasma source and plasma processing device - Google Patents
Plasma source and plasma processing device Download PDFInfo
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
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- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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- H—ELECTRICITY
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- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
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Description
本発明は、真空容器内にプラズマを発生させるためのプラズマ源、及び、このプラズマ源を備えたプラズマ処理装置に関するものである。 The present invention relates to a plasma source for generating plasma in a vacuum vessel, and a plasma processing apparatus equipped with this plasma source.
アンテナに高周波電流を流し、それによって生じる誘導電界によって誘導結合型のプラズマ（略称ＩＣＰ）を発生させ、この誘導結合型のプラズマを用いて基板等の被処理物に処理を施すプラズマ処理装置が従来から提案されている。このようなプラズマ処理装置として、特許文献１には、アンテナを真空容器の外部に配置し、真空容器の側壁の開口を塞ぐように設けた誘電体窓を通じてアンテナから生じた高周波磁場を真空容器内に透過させることで、真空容器内にプラズマを発生させるものが開示されている。 Plasma processing apparatuses have been proposed that generate inductively coupled plasma (ICP) by passing a high-frequency current through an antenna, and use the resulting induced electric field to process a substrate or other workpiece. Patent Document 1 discloses such a plasma processing apparatus in which an antenna is placed outside a vacuum vessel, and a high-frequency magnetic field generated from the antenna is transmitted into the vacuum vessel through a dielectric window that is provided to cover an opening in the side wall of the vacuum vessel, thereby generating plasma within the vacuum vessel.
ところが、上述のプラズマ処理装置では、誘電体窓を真空容器の側壁の一部として用いるため、誘電体窓は真空容器内を真空排気した際に真空容器の内外の差圧に耐えられるよう十分な強度を有する必要がある。特に誘電体窓を構成する誘電体材料は靭性が低いセラミックスやガラスであるので、上述した差圧に耐えられる十分な強度を備えるためには誘電体窓の厚みを十分に大きくする必要がある。それ故、アンテナから真空容器内の処理室までの距離が遠くなってしまい、処理室における誘導電界の強度が弱くなり、プラズマの生成効率が低下するという問題がある。 However, in the above-mentioned plasma processing apparatus, since the dielectric window is used as part of the side wall of the vacuum vessel, the dielectric window needs to have sufficient strength to withstand the pressure difference between the inside and outside of the vacuum vessel when the inside of the vacuum vessel is evacuated. In particular, since the dielectric material constituting the dielectric window is ceramics or glass, which has low toughness, the thickness of the dielectric window needs to be sufficiently large in order to provide sufficient strength to withstand the above-mentioned pressure difference. This results in a problem that the distance from the antenna to the processing chamber in the vacuum vessel becomes long, weakening the strength of the induced electric field in the processing chamber and reducing the efficiency of plasma generation.
そこで、本発明者は、本発明の開発にあたって、図１０に示すように、真空容器の開口を塞ぐ金属製のスリット板と、スリット板に形成されたスリットを真空容器の外側から塞ぐ誘電体板とを備えたプラズマ源を中間的に考えた。
このような構成であれば、金属製のスリット板と、このスリット板に重ね合わせた誘電体板とに磁場透過窓としての機能を担わせているので、誘電体板のみに磁場透過窓としての機能を担わせる場合に比べて磁場透過窓の厚みを小さくすることができる。これにより、アンテナから真空容器内までの距離を短くすることができ、アンテナから生じた高周波磁場を効率良く真空容器内に供給することができる。
Therefore, in developing the present invention, the inventors came up with an intermediate plasma source equipped with a metal slit plate that covers the opening of the vacuum vessel and a dielectric plate that covers the slits formed in the slit plate from the outside of the vacuum vessel, as shown in FIG. 10.
In this configuration, the metallic slit plate and the dielectric plate superimposed on the slit plate function as a magnetic field transmission window, so the thickness of the magnetic field transmission window can be made smaller than when only the dielectric plate functions as the magnetic field transmission window. This makes it possible to shorten the distance from the antenna to the inside of the vacuum vessel, and to efficiently supply the high frequency magnetic field generated by the antenna into the vacuum vessel.
しかしながら、上述した構成であると、図１１に示すように、スリット近傍に生成されたプラズマによる堆積物やスパッタ等による粒子の回り込みによる堆積物が誘電体板に堆積してしまい、そうした堆積物が導電性であると、スリットを形成する内側面が堆積物を介して導電してしまう。そうすると、アンテナから生じる高周波磁場により、スリット板にもアンテナの長手方向に沿った高周波電流が流れてしまい、スリット板や堆積物の発熱により誘電体板が加熱される。その結果、誘電体板の熱歪みが生じたり、誘電体板と堆積物との化学反応による強度低下が生じたりして、誘電体板が破損する恐れなどが生じる。 However, with the above-mentioned configuration, as shown in FIG. 11, deposits due to plasma generated near the slits and deposits due to particles wrapped around by sputtering, etc., accumulate on the dielectric plate. If such deposits are conductive, the inner surface forming the slit becomes conductive through the deposits. Then, due to the high-frequency magnetic field generated by the antenna, a high-frequency current flows in the slit plate along the longitudinal direction of the antenna, and the dielectric plate is heated by the heat generated by the slit plate and the deposits. As a result, thermal distortion occurs in the dielectric plate, and a decrease in strength occurs due to a chemical reaction between the dielectric plate and the deposits, which may cause the dielectric plate to be damaged.
しかも、上述したようにスリット間が堆積物により導電すると、誘電体板の表面が導電化されることになるので、アンテナから生じる高周波磁場がシールドされてしまい、真空容器内に透過する高周波磁場が低下し、プラズマ密度の低下や不安定性を引き起こす。 Furthermore, as mentioned above, if the gap between the slits becomes conductive due to deposits, the surface of the dielectric plate becomes conductive, which shields the high-frequency magnetic field generated by the antenna, reducing the amount of high-frequency magnetic field that penetrates into the vacuum vessel, causing a decrease in plasma density and instability.
そこで、本発明は、かかる問題を一挙に解決するべくなされたものであり、真空容器の外部にアンテナを配置する構成において、スリットが形成されたスリット部材を用いることで、アンテナから真空容器内までの距離を短くし、これによりアンテナから生じた高周波磁場を効率良く真空容器内に供給できるようにするとともに、誘電体板への堆積物に起因した高周波電流がスリット部材に流れることを抑制することをその主たる課題とするものである。 The present invention has been made to solve all these problems at once, and its main objective is to shorten the distance from the antenna to the inside of the vacuum vessel by using a slit member with a slit formed in it in a configuration in which an antenna is placed outside the vacuum vessel, thereby enabling the high-frequency magnetic field generated by the antenna to be efficiently supplied to the inside of the vacuum vessel, and to prevent high-frequency current caused by deposits on the dielectric plate from flowing through the slit member.
すなわち本発明に係るプラズマ源は、真空容器の外部に設けられたアンテナに高周波電流を流して前記真空容器内にプラズマを発生させるプラズマ源であって、前記真空容器の前記アンテナに臨む位置に形成された開口を塞ぐとともに、前記アンテナの長手方向に沿って複数のスリットが形成されたスリット部材と、前記スリットを前記真空容器の外側から塞ぐ誘電体板とを具備し、前記スリット部材には、外側を向く外向き面において互いに隣り合う前記スリットに挟まれた領域を内側に向かって凹ませた凹部が形成されていることを特徴とするものである。 That is, the plasma source according to the present invention is a plasma source that generates plasma in a vacuum vessel by passing a high-frequency current through an antenna provided outside the vacuum vessel, and is characterized in that it includes a slit member that covers an opening formed in the vacuum vessel at a position facing the antenna and has multiple slits formed along the longitudinal direction of the antenna, and a dielectric plate that covers the slits from the outside of the vacuum vessel, and the slit member has a recess formed on its outward surface that is recessed inward in the area between adjacent slits.
このように構成されたプラズマ源であれば、スリット部材の外向き面において互いに隣り合うスリットに挟まれた領域を内側に向かって凹ませた凹部を形成しているので、誘電体板に導電性の付着物が堆積したとしても、この凹部がスリット部材に流れるアンテナの長手方向に沿った高周波電流を少なくとも抑制し、凹部の構成によっては高周波電流を遮断することができる。
これにより、真空容器の外部にアンテナを配置する構成において、スリットが形成されたスリット部材を用いることで、アンテナから真空容器内までの距離を短くし、これによりアンテナから生じた高周波磁場を効率良く真空容器内に供給できるようにするとともに、誘電体板への堆積物に起因した高周波電流がスリット部材に流れることを抑制することができる。
With a plasma source configured in this manner, a recess is formed on the outward surface of the slit member by recessing the area between adjacent slits toward the inside. Therefore, even if conductive deposits accumulate on the dielectric plate, this recess at least suppresses the high-frequency current flowing along the longitudinal direction of the antenna through the slit member, and depending on the configuration of the recess, the high-frequency current can be blocked.
As a result, in a configuration in which an antenna is placed outside the vacuum vessel, by using a slit member having a slit formed therein, the distance from the antenna to the inside of the vacuum vessel can be shortened, thereby enabling the high-frequency magnetic field generated from the antenna to be efficiently supplied to the inside of the vacuum vessel while also preventing high-frequency current caused by deposits on the dielectric plate from flowing through the slit member.
より具体的な態様としては、前記凹部が、前記スリットと空間的につながっていることが好ましい。
このような構成であれば、誘電体板に導電性の付着物が堆積したとしても、その堆積物がスリット部材の凹部を形成する内側面に接触しなければ、堆積物と内側面との間には電流が流れないので、堆積物に起因した高周波電流を遮断することができる。
As a more specific aspect, it is preferable that the recess is spatially connected to the slit.
With this configuration, even if conductive deposits accumulate on the dielectric plate, as long as the deposits do not come into contact with the inner surface forming the recess of the slit member, no current will flow between the deposits and the inner surface, and therefore the high-frequency current caused by the deposits can be blocked.
堆積物が凹部を形成する内側面により確実に接触しないようにするためには、前記凹部の前記長手方向に沿った寸法が、当該凹部の深さ寸法の３倍以上であることが好ましい。
これならば、堆積物に起因した高周波電流の発生をより確実に遮断することができる。
In order to more reliably prevent deposits from coming into contact with the inner surfaces that define the recess, it is preferable that the dimension of the recess along the longitudinal direction is three times or more the depth dimension of the recess.
This makes it possible to more reliably block the generation of high frequency current caused by deposits.
より具体的な実施態様としては、前記スリットが、前記アンテナの長手方向と直交する方向に延びており、前記凹部が、前記スリットの延在方向に沿って形成されている構成を挙げることができる。 A more specific embodiment is one in which the slit extends in a direction perpendicular to the longitudinal direction of the antenna, and the recess is formed along the extension direction of the slit.
前記スリット部材には、前記外向き面における前記スリットの延在方向外側の領域を内側に向かって凹ませた第２凹部が形成されていることが好ましい。
このような構成であれば、スリットの延在方向外側の領域に高周波電流が流れることをも抑制することができる。これにより、アンテナから生じた高周波磁場に対するシールド作用を低減することができ、高周波磁場をより効率良く真空容器内に供給することが可能となる。
It is preferable that the slit member has a second recess formed by recessing an area of the outward surface on the outer side in the extending direction of the slit toward the inside.
With this configuration, it is possible to prevent high-frequency current from flowing in the area outside the extending direction of the slit, thereby reducing the shielding effect against the high-frequency magnetic field generated by the antenna and enabling the high-frequency magnetic field to be supplied to the inside of the vacuum vessel more efficiently.
前記スリット部材が、前記複数のスリットが前記アンテナの長手方向に沿って形成されたスリット板と、前記スリット板と前記誘電体板との間に介在し、前記スリット板における少なくとも１つの前記スリットとその周囲とに重なり合う開口が複数形成されたシール部材とを有し、前記スリット及び前記開口との重なりにより生じる段差が前記凹部として形成されていることが好ましい。
このような構成であれば、スリット部材と誘電体板との間の気密性を担保しつつ、凹部を形成することができる。
It is preferable that the slit member comprises a slit plate in which the multiple slits are formed along the longitudinal direction of the antenna, and a sealing member interposed between the slit plate and the dielectric plate, in which multiple openings are formed that overlap at least one of the slits in the slit plate and its surroundings, and a step created by the overlap between the slits and the openings is formed as the recess.
With this configuration, the recess can be formed while ensuring airtightness between the slit member and the dielectric plate.
また、真空容器と、上述したプラズマ源とを備えるプラズマ処理装置も本発明の１つであり、かかるプラズマ処理装置であれば、上述したプラズマ源と同様の作用効果を奏し得る。 The present invention also includes a plasma processing apparatus equipped with a vacuum vessel and the above-mentioned plasma source, and such a plasma processing apparatus can achieve the same effects as the above-mentioned plasma source.
このように構成した本発明によれば、真空容器の外部にアンテナを配置する構成において、スリットが形成されたスリット部材を用いることで、アンテナから真空容器内までの距離を短くし、これによりアンテナから生じた高周波磁場を効率良く真空容器内に供給できるようにするとともに、スリット部材のスリット間が導電されてしまうことを防ぐことができる。 According to the present invention configured in this way, in a configuration in which an antenna is placed outside a vacuum vessel, the distance from the antenna to the inside of the vacuum vessel is shortened by using a slit member with a slit formed therein, which allows the high-frequency magnetic field generated by the antenna to be efficiently supplied to the inside of the vacuum vessel and prevents electrical conduction between the slits of the slit member.
以下に、本発明に係るプラズマ源及びプラズマ処理装置の一実施形態について、図面を参照して説明する。 Below, an embodiment of the plasma source and plasma processing device according to the present invention will be described with reference to the drawings.
＜装置構成＞
本実施形態のプラズマ処理装置１００は、誘導結合型のプラズマＰを用いて基板Ｗに処理を施すものである。ここで、基板Ｗは、例えば、液晶ディスプレイや有機ＥＬディスプレイ等のフラットパネルディスプレイ（ＦＰＤ）用の基板、フレキシブルディスプレイ用のフレキシブル基板等である。また、基板Ｗに施す処理は、例えば、プラズマＣＶＤ法による膜形成、エッチング、アッシング、スパッタリング等である。
<Device Configuration>
The plasma processing apparatus 100 of this embodiment processes a substrate W by using an inductively coupled plasma P. Here, the substrate W is, for example, a substrate for a flat panel display (FPD) such as a liquid crystal display or an organic electroluminescence display, a flexible substrate for a flexible display, etc. The processing performed on the substrate W is, for example, film formation by a plasma CVD method, etching, ashing, sputtering, etc.
なお、このプラズマ処理装置１００は、プラズマＣＶＤ法によって膜形成を行う場合はプラズマＣＶＤ装置、エッチングを行う場合はプラズマエッチング装置、アッシングを行う場合はプラズマアッシング装置、スパッタリングを行う場合はプラズマスパッタリング装置とも呼ばれる。 This plasma processing apparatus 100 is also called a plasma CVD apparatus when film formation is performed by plasma CVD, a plasma etching apparatus when etching is performed, a plasma ashing apparatus when ashing is performed, and a plasma sputtering apparatus when sputtering is performed.
具体的にプラズマ処理装置１００は、図１及び図２に示すように、真空排気され且つガスＧが導入される真空容器１と、真空容器１の内部にプラズマを発生させるプラズマ源２００とを具備してなり、プラズマ源２００は、真空容器１の外部に設けられたアンテナ２と、アンテナ２に高周波を印加する高周波電源３とを備えたものである。かかる構成において、アンテナ２に高周波電源３から高周波を印加することによりアンテナ２には高周波電流ＩＲが流れて、真空容器１内に誘導電界が発生して誘導結合型のプラズマＰが生成される。 Specifically, as shown in Figures 1 and 2, the plasma processing apparatus 100 comprises a vacuum vessel 1 which is evacuated and into which gas G is introduced, and a plasma source 200 which generates plasma inside the vacuum vessel 1. The plasma source 200 comprises an antenna 2 provided outside the vacuum vessel 1, and a high-frequency power supply 3 which applies a high-frequency wave to the antenna 2. In this configuration, by applying a high-frequency wave from the high-frequency power supply 3 to the antenna 2, a high-frequency current IR flows through the antenna 2, an induced electric field is generated inside the vacuum vessel 1, and an inductively coupled plasma P is generated.
真空容器１は、例えば金属製の容器であり、その壁（ここでは上壁１ａ）には、厚さ方向に貫通する開口１ｘが形成されている。この真空容器１は、ここでは電気的に接地されており、その内部は真空排気装置４によって真空排気される。 The vacuum vessel 1 is, for example, a metal vessel, and an opening 1x is formed in its wall (here, the upper wall 1a) that penetrates in the thickness direction. The vacuum vessel 1 is electrically grounded here, and its interior is evacuated by a vacuum exhaust device 4.
また、真空容器１内には、例えば流量調整器（図示省略）や真空容器１に設けられた１又は複数のガス導入口１１を経由して、ガスＧが導入される。ガスＧは、基板Ｗに施す処理内容に応じたものにすれば良い。例えば、プラズマＣＶＤ法によって基板に膜形成を行う場合には、ガスＧは、原料ガス又はそれを希釈ガス（例えばＨ２）で希釈したガスである。より具体例を挙げると、原料ガスがＳｉＨ４の場合はＳｉ膜を、ＳｉＨ４＋ＮＨ３の場合はＳｉＮ膜を、ＳｉＨ４＋Ｏ２の場合はＳｉＯ２膜を、ＳｉＦ４＋Ｎ２の場合はＳｉＮ：Ｆ膜（フッ素化シリコン窒化膜）を、それぞれ基板上に形成することができる。 In addition, gas G is introduced into the vacuum vessel 1 via, for example, a flow rate regulator (not shown) or one or more gas inlets 11 provided in the vacuum vessel 1. The gas G may be selected according to the processing contents to be performed on the substrate W. For example, when a film is formed on the substrate by plasma CVD, the gas G is a source gas or a gas obtained by diluting the source gas with a dilution gas (for example, H 2 ). To give a more specific example, when the source gas is SiH 4 , a Si film can be formed on the substrate, when the source gas is SiH 4 +NH 3 , a SiN film can be formed, when the source gas is SiH 4 +O 2 , a SiO 2 film can be formed, and when the source gas is SiF 4 +N 2 , a SiN:F film (fluorinated silicon nitride film) can be formed.
この真空容器１の内部には、基板Ｗを保持する基板ホルダ５が設けられている。この例のように、基板ホルダ５にバイアス電源６からバイアス電圧を印加するようにしても良い。バイアス電圧は、例えば負の直流電圧、負のバイアス電圧等であるが、これに限られるものではない。このようなバイアス電圧によって、例えば、プラズマＰ中の正イオンが基板Ｗに入射する時のエネルギーを制御して、基板Ｗの表面に形成される膜の結晶化度の制御等を行うことができる。基板ホルダ５内に、基板Ｗを加熱するヒータ５１を設けておいても良い。 Inside this vacuum vessel 1, a substrate holder 5 is provided for holding a substrate W. As in this example, a bias voltage may be applied to the substrate holder 5 from a bias power supply 6. The bias voltage may be, for example, a negative DC voltage, a negative bias voltage, etc., but is not limited to these. By using such a bias voltage, for example, it is possible to control the energy when positive ions in the plasma P are incident on the substrate W, thereby controlling the crystallinity of the film formed on the surface of the substrate W. A heater 51 for heating the substrate W may be provided inside the substrate holder 5.
アンテナ２は、図１及び図２に示すように、真空容器１に形成された開口１ｘに臨むように配置されている。なお、アンテナ２の本数は１本に限らず、複数本のアンテナ２を設けても良い。 As shown in Figures 1 and 2, the antenna 2 is arranged to face the opening 1x formed in the vacuum vessel 1. Note that the number of antennas 2 is not limited to one, and multiple antennas 2 may be provided.
アンテナ２は、図２に示すように、その一端部である給電端部２ａが、整合回路３１を介して高周波電源３が接続されており、他端部である終端部２ｂが、直接接地されている。なお、終端部２ｂは、コンデンサ又はコイル等を介して接地されてもよい。 As shown in FIG. 2, one end of the antenna 2, the power supply end 2a, is connected to a high-frequency power source 3 via a matching circuit 31, and the other end, the termination end 2b, is directly grounded. The termination end 2b may also be grounded via a capacitor or a coil, etc.
高周波電源３は、整合回路３１を介してアンテナ２に高周波電流ＩＲを流すことができる。高周波の周波数は例えば一般的な１３．５６ＭＨｚであるが、これに限られるものではなく適宜変更してもよい。 The high-frequency power supply 3 can pass a high-frequency current IR through the antenna 2 via a matching circuit 31. The frequency of the high-frequency current is, for example, a typical 13.56 MHz, but is not limited to this and may be changed as appropriate.
ここで、本実施形態のプラズマ源２００は、真空容器１の壁（上壁１ａ）に形成された開口１ｘを真空容器１の外側から塞ぐスリット部材７と、スリット部材７に形成されたスリット７ｘを真空容器１の外側から塞ぐ誘電体板８とをさらに備えている。 Here, the plasma source 200 of this embodiment further includes a slit member 7 that blocks the opening 1x formed in the wall (upper wall 1a) of the vacuum vessel 1 from outside the vacuum vessel 1, and a dielectric plate 8 that blocks the slit 7x formed in the slit member 7 from outside the vacuum vessel 1.
スリット部材７は、その厚み方向に貫通してなるスリット７ｘがアンテナ２の長手方向に沿って複数形成されたものであり、アンテナ２から生じた高周波磁場を真空容器１内に透過させるとともに、真空容器１の外部から真空容器１の内部への電界の入り込みを防ぐものである。 The slit member 7 has multiple slits 7x formed along the longitudinal direction of the antenna 2, penetrating the thickness direction of the slit member 7. This allows the high-frequency magnetic field generated by the antenna 2 to pass through the vacuum vessel 1, while preventing the electric field from entering the interior of the vacuum vessel 1 from the outside.
具体的にこのスリット部材７は、互いに平行な複数のスリット７ｘが形成された平板状のものであり、後述する誘電体板８よりも機械強度が高いことが好ましく、誘電体板８よりも厚み寸法が大きいことが好ましい。 Specifically, the slit member 7 is a flat plate with multiple parallel slits 7x formed therein, and preferably has a higher mechanical strength than the dielectric plate 8 described below, and preferably has a greater thickness than the dielectric plate 8.
より具体的に説明すると、スリット部材７は、例えばＣｕ、Ａｌ、Ｚｎ、Ｎｉ、Ｓｎ、Ｓｉ、Ｔｉ、Ｆｅ、Ｃｒ、Ｎｂ、Ｃ、Ｍｏ、Ｗ又はＣｏを含む群から選択される１種の金属又はそれらの合金（例えばステンレス合金、アルミニウム合金等）等の金属材料を圧延加工（例えば冷間圧延や熱間圧延）などにより製造したものであり、例えば厚みが約５ｍｍのものである。ただし、製造方法や厚みはこれに限らず仕様に応じて適宜変更して構わない。 To explain more specifically, the slit member 7 is manufactured by rolling (e.g., cold rolling or hot rolling) a metal material such as one metal selected from the group including Cu, Al, Zn, Ni, Sn, Si, Ti, Fe, Cr, Nb, C, Mo, W, or Co, or an alloy thereof (e.g., stainless steel alloy, aluminum alloy, etc.), and has a thickness of, for example, about 5 mm. However, the manufacturing method and thickness are not limited to this and may be changed as appropriate depending on the specifications.
このスリット部材７は、平面視において真空容器の開口１ｘよりも大きいものであり、上壁１ａに支持された状態で開口１ｘを塞いでいる。スリット部材７と上壁１ａとの間には、Ｏリングやガスケット等のシール部材Ｓ（図１及び図２参照）が介在しており、これらの間は真空シールされている。 The slit member 7 is larger than the opening 1x of the vacuum vessel in a plan view, and is supported by the upper wall 1a to close the opening 1x. A sealing member S (see Figures 1 and 2), such as an O-ring or a gasket, is interposed between the slit member 7 and the upper wall 1a, creating a vacuum seal between them.
誘電体板８は、スリット部材７において真空容器１の外側を向く外向き面７１（真空容器１の内部を向く内向き面の裏面）に設けられて、スリット部材７のスリット７ｘを塞ぐものである。 The dielectric plate 8 is provided on the outward surface 71 of the slit member 7 that faces the outside of the vacuum vessel 1 (the back surface of the inward surface that faces the inside of the vacuum vessel 1) and blocks the slit 7x of the slit member 7.
誘電体板８は、全体が誘電体物質で構成された平板状をなすものであり、例えばアルミナ、炭化ケイ素、窒化ケイ素等のセラミックス、石英ガラス、無アルカリガラス等の無機材料、フッ素樹脂（例えばテフロン）等の樹脂材料等からなる。なお、誘電損を低減する観点から、誘電体板８を構成する材料は、誘電正接が０．０１以下のものが好ましく、０．００５以下のものがより好ましい。 The dielectric plate 8 is a flat plate made entirely of a dielectric material, such as ceramics such as alumina, silicon carbide, and silicon nitride, inorganic materials such as quartz glass and non-alkali glass, and resin materials such as fluororesin (e.g., Teflon). From the viewpoint of reducing dielectric loss, the material making up the dielectric plate 8 preferably has a dielectric tangent of 0.01 or less, and more preferably 0.005 or less.
ここでは誘電体板８の板厚をスリット部材７の板厚よりも小さくしているが、これに限定されず、例えば真空容器１を真空排気した状態において、スリット７ｘから受ける真空容器１の内外の差圧に耐え得る強度を備えれば良く、スリット７ｘの数や長さ等の仕様に応じて適宜設定されてよい。ただし、アンテナ２と真空容器１との間の距離を短くする観点からは薄い方が好ましい。 Here, the thickness of the dielectric plate 8 is made smaller than the thickness of the slit member 7, but this is not limited thereto, and it is sufficient that the plate has a strength that can withstand the pressure difference between the inside and outside of the vacuum vessel 1 received through the slits 7x when the vacuum vessel 1 is evacuated, and may be set appropriately according to the specifications such as the number and length of the slits 7x. However, from the viewpoint of shortening the distance between the antenna 2 and the vacuum vessel 1, a thinner plate is preferable.
かかる構成により、スリット部材７及び誘電体板８は、磁場を透過させる磁場透過窓９として機能を担う。すなわち、高周波電源３からアンテナ２に高周波を印加すると、アンテナ２から発生した高周波磁場が、スリット部材７及び誘電体板８からなる磁場透過窓９を透過して真空容器１内に形成（供給）される。これにより、真空容器１内の空間に誘導電界が発生し、誘導結合型のプラズマＰが生成される。 With this configuration, the slit member 7 and the dielectric plate 8 function as a magnetic field transmission window 9 that allows the magnetic field to pass through. That is, when a high frequency is applied from the high frequency power supply 3 to the antenna 2, the high frequency magnetic field generated from the antenna 2 passes through the magnetic field transmission window 9 consisting of the slit member 7 and the dielectric plate 8 and is formed (supplied) inside the vacuum vessel 1. As a result, an induced electric field is generated in the space inside the vacuum vessel 1, and an inductively coupled plasma P is generated.
然して、上述したスリット部材７には、図３に示すように、上述した外向き面７１において互いに隣り合うスリット７ｘに挟まれた領域を内側に向かって凹ませた凹部７２が形成されている。 As shown in FIG. 3, the slit member 7 has a recess 72 formed by recessing the area between the adjacent slits 7x on the outward surface 71 toward the inside.
より具体的に説明すると、スリット部材７は、図４に示すように、例えば矩形状の枠要素７３と、この枠要素７３の内側にアンテナ２の長手方向に沿って例えば等間隔に設けられた複数の柵状要素７４とを有し、これらの柵状要素７４の間それぞれがスリット７ｘとして形成されている。 To explain more specifically, as shown in FIG. 4, the slit member 7 has, for example, a rectangular frame element 73 and a number of fence-like elements 74 arranged, for example at equal intervals, inside the frame element 73 along the longitudinal direction of the antenna 2, and each space between these fence-like elements 74 is formed as a slit 7x.
スリット７ｘは、アンテナ２の長手方向と直交する方向に沿って延びており、凹部７２は、スリット７ｘの延在方向（すなわち、アンテナ２の長手方向と直交する方向）に沿って形成された座ぐりや座掘りや切り欠きなどの窪みである。 The slit 7x extends in a direction perpendicular to the longitudinal direction of the antenna 2, and the recess 72 is a depression such as a countersink, a counterbored hole, or a notch formed in the extension direction of the slit 7x (i.e., the direction perpendicular to the longitudinal direction of the antenna 2).
本実施形態では、図３に示すように、柵状要素７４の外向き面７１が、誘電体板８に接触して該誘電体板８を支持する接触領域７１ａと、接触領域７１ａよりも内側に窪んで誘電体板８とは接触しない非接触領域７１ｂとからなり、この非接触領域７１ｂが、上述した凹部７２の底面として形成されている。 In this embodiment, as shown in FIG. 3, the outward surface 71 of the fence-like element 74 is composed of a contact area 71a that contacts the dielectric plate 8 and supports the dielectric plate 8, and a non-contact area 71b that is recessed inward from the contact area 71a and does not contact the dielectric plate 8, and this non-contact area 71b is formed as the bottom surface of the recess 72 described above.
すなわち、本実施形態の凹部７２は、非接触領域７１ｂと、この非接触領域７１ｂから接触領域７１ａに延びる内側面７１ｃとに囲まれた断面略四角形状の段差部であり、ここではスリット７ｘと空間的につながるように形成されている。 That is, the recess 72 in this embodiment is a stepped portion with a substantially rectangular cross section surrounded by a non-contact region 71b and an inner surface 71c extending from the non-contact region 71b to the contact region 71a, and is formed so as to be spatially connected to the slit 7x.
ここでの凹部７２は、図３及び図４に示すように、柵状要素７４それぞれに設けられており、接触領域７１ａに対してアンテナ２の長手方向片側に設けられている。すなわち、本実施形態では、アンテナ２の長手方向に沿って、スリット７ｘ、凹部７２、及び接触領域７１ａが繰り返し配列されている。 As shown in Figures 3 and 4, the recesses 72 here are provided in each fence element 74, and are provided on one side of the contact area 71a in the longitudinal direction of the antenna 2. That is, in this embodiment, the slits 7x, recesses 72, and contact areas 71a are repeatedly arranged along the longitudinal direction of the antenna 2.
凹部７２の寸法について述べると、ここではアンテナ２の長手方向に沿った寸法が、深さ寸法の３倍以上となるようにしてあり、また、アンテナ２の長手方向と直交する方向に沿った寸法が、同方向に沿ったスリット７ｘの寸法と同じ或いはそれ以上になるようにしてある。 Regarding the dimensions of the recess 72, the dimension along the longitudinal direction of the antenna 2 is at least three times the depth dimension, and the dimension along the direction perpendicular to the longitudinal direction of the antenna 2 is the same as or greater than the dimension of the slit 7x along the same direction.
ここで、本実施形態のスリット部材７には、図４に示すように、外向き面７１におけるスリット７ｘの延在方向外側の領域を内側に向かって凹ませた第２凹部７５が形成されている。 Here, in the slit member 7 of this embodiment, as shown in FIG. 4, a second recess 75 is formed by recessing the area on the outward surface 71 on the outer side in the extension direction of the slit 7x toward the inside.
より具体的に説明すると、この第２凹部７５は、スリット７ｘの延在方向と直交する方向（すなわち、アンテナ２の長手方向）に沿って枠要素７３の外向き面７１に形成された座ぐりや座掘りや切り欠きなどの窪みである。 More specifically, the second recess 75 is a depression such as a countersink, a counterbored hole, or a notch formed on the outward surface 71 of the frame element 73 along a direction perpendicular to the extension direction of the slit 7x (i.e., the longitudinal direction of the antenna 2).
この第２凹部７５は、ここでは上述した凹部７２と一体的（連続的）に形成されており、凹部７２と同じ深さ寸法であって、それぞれのスリット７ｘに対応して設けられている。 The second recesses 75 are formed integrally (continuously) with the recesses 72 described above, have the same depth as the recesses 72, and are provided in correspondence with each of the slits 7x.
本実施形態では、スリット７ｘの延在方向一端部の外側及び延在方向他端部の外側それぞれに第２凹部７５が形成されており、かかる構成により、スリット７ｘの３辺、すなわちスリット７ｘの一方の長辺及び対向する一対の短辺が、凹部７２及び一対の第２凹部７５により囲われている。 In this embodiment, second recesses 75 are formed on the outside of one end of the slit 7x in the extension direction and on the outside of the other end of the slit 7x in the extension direction. With this configuration, three sides of the slit 7x, i.e., one long side and a pair of opposing short sides of the slit 7x, are surrounded by the recess 72 and a pair of second recesses 75.
＜本実施形態の効果＞
このように構成した本実施形態のプラズマ処理装置１００及びプラズマ源２００によれば、スリット部材７の外向き面７１において互いに隣り合うスリット７ｘに挟まれた領域を内側に向かって凹ませた凹部７２を形成しているので、誘電体板８に導電性の付着物が堆積したとしても、この凹部７２がスリット部材７に流れるアンテナの長手方向に沿った高周波電流を少なくとも抑制することができる。
これにより、真空容器１の外部にアンテナ２を配置する構成において、スリット部材７を用いることで、アンテナ２から真空容器１内までの距離を短くし、これによりアンテナ２から生じた高周波磁場を効率良く真空容器１内に供給できるようにするとともに、誘電体板８への堆積物に起因した高周波電流がスリット部材７に流れることを抑制することができる。
<Effects of this embodiment>
According to the plasma processing apparatus 100 and plasma source 200 of this embodiment configured in this manner, a recess 72 is formed by recessing the area between adjacent slits 7x on the outward surface 71 of the slit member 7 toward the inside. Therefore, even if conductive deposits accumulate on the dielectric plate 8, this recess 72 can at least suppress the high-frequency current flowing along the longitudinal direction of the antenna through the slit member 7.
As a result, in a configuration in which the antenna 2 is arranged outside the vacuum vessel 1, the use of the slit member 7 shortens the distance from the antenna 2 to the inside of the vacuum vessel 1, thereby allowing the high-frequency magnetic field generated by the antenna 2 to be efficiently supplied to the inside of the vacuum vessel 1 and also preventing high-frequency current caused by deposits on the dielectric plate 8 from flowing through the slit member 7.
また、アンテナ２の長手方向に沿った凹部７２の寸法が、当該凹部７２の深さ寸法の３倍以上であるので、誘電体板８に導電性の付着物が堆積したとしても、その堆積物が凹部７２を形成する内側面７１ｃに接触せず、堆積物に起因した高周波電流の発生を遮断することができる。 In addition, the dimension of the recess 72 along the longitudinal direction of the antenna 2 is at least three times the depth dimension of the recess 72, so even if conductive deposits accumulate on the dielectric plate 8, the deposits do not come into contact with the inner surface 71c that forms the recess 72, and the generation of high-frequency current caused by the deposits can be blocked.
さらに、第２凹部７５が外向き面７１におけるスリット７ｘの延在方向外側に形成されているので、スリット７ｘの延在方向外側の領域に高周波電流が流れることをも抑制することができる。これにより、アンテナ２から生じた高周波磁場に対するシールド作用を低減することができ、高周波磁場をより効率良く真空容器１内に供給することができる。 Furthermore, since the second recess 75 is formed on the outer surface 71 on the outer side in the extension direction of the slit 7x, it is possible to prevent high-frequency current from flowing in the area on the outer side in the extension direction of the slit 7x. This reduces the shielding effect against the high-frequency magnetic field generated by the antenna 2, and allows the high-frequency magnetic field to be supplied to the inside of the vacuum vessel 1 more efficiently.
＜その他の変形実施形態＞
なお、本発明は前記実施形態に限られるものではない。
<Other Modified Embodiments>
The present invention is not limited to the above-described embodiment.
例えば、前記実施形態では、凹部７２が接触領域７１ａに対してアンテナの長手方向片側に設けられていたが、凹部７２は、図５に示すように、接触領域７１ａに対してアンテナ２の長手方方向両側に設けられていても良い。 For example, in the above embodiment, the recess 72 is provided on one side of the antenna in the longitudinal direction relative to the contact area 71a, but the recess 72 may be provided on both sides of the antenna 2 in the longitudinal direction relative to the contact area 71a, as shown in FIG. 5.
また、前記実施形態の凹部７２は、スリット７ｘと空間的につながっていたが、図６に示すように、凹部７２に対してアンテナ２の長手方向両側に接触領域７１ａを形成して、凹部７２をスリット７ｘから空間的に隔てても良い。 In addition, the recess 72 in the above embodiment was spatially connected to the slit 7x, but as shown in FIG. 6, contact areas 71a may be formed on both sides of the antenna 2 in the longitudinal direction relative to the recess 72, so that the recess 72 is spatially separated from the slit 7x.
さらに、前記実施形態の凹部７２は、非接触領域７１ｂと内側面７１ｃとに囲まれた断面略四角形状の段差部であったが、図７に示すように、非接触領域７１ｂは傾斜していても良く、この場合の凹部７２は断面略三角形状のものとなる。また、非接触領域７１ｂは例えば曲面であっても良いし、凹部７２の形状も種々変更して構わない。 In addition, the recess 72 in the above embodiment is a stepped portion with a substantially rectangular cross section surrounded by the non-contact area 71b and the inner surface 71c, but as shown in FIG. 7, the non-contact area 71b may be inclined, in which case the recess 72 has a substantially triangular cross section. In addition, the non-contact area 71b may be, for example, a curved surface, and the shape of the recess 72 may be changed in various ways.
加えて、前記実施形態では平板状のスリット部材７の外側に誘電体板８が設けられていたが、スリット部材７としては、図８に示すように、複数のスリット７ｘが形成されたスリット板７Ａと、このスリット板７Ａと誘電体板８との間に設けられたシール部材７Ｂとから構成されていても良い。 In addition, in the above embodiment, a dielectric plate 8 is provided on the outside of the flat slit member 7, but the slit member 7 may be composed of a slit plate 7A having a plurality of slits 7x formed therein, and a seal member 7B provided between the slit plate 7A and the dielectric plate 8, as shown in FIG. 8.
より具体的に説明すると、このシール部材７Ｂは例えば単体のシート状のものであり、同図８に示すように、スリット板７Ａにおける少なくとも１つのスリット７ｘとその周囲とに重なり合う開口７ｙが複数形成されたものである。ここでの開口７ｙは、１つのスリット７ｘよりも開口面積が大きく、１つのスリット７ｘとともに、該スリット７ｘの一方の長辺の外側と、互いに対向する一対の短辺それぞれの外側とに重なり合うように形成されている。
かかる構成において、スリット７ｘと開口７ｙとの重なりにより生じる段差が凹部７２として形成されている。
More specifically, the sealing member 7B is, for example, a single sheet-like member, and has a plurality of openings 7y formed therein, overlapping at least one slit 7x in the slit plate 7A and its periphery, as shown in Fig. 8. The openings 7y here have a larger opening area than one slit 7x, and are formed so as to overlap, together with one slit 7x, the outside of one long side of the slit 7x and the outsides of a pair of opposing short sides.
In this configuration, a step caused by overlapping between the slit 7 x and the opening 7 y is formed as a recess 72 .
また、上述したシール部材７Ｂは単体のシート状のものとして説明したが、図９に示すように、枠体７Ｂ１と、枠体７Ｂ１内に設けられて上述した開口７ｙを形成する柵体７Ｂ２とから構成されていても良い。 The sealing member 7B described above is described as being a single sheet-like member, but as shown in FIG. 9, it may be composed of a frame body 7B1 and a fence body 7B2 that is provided within the frame body 7B1 and forms the above-mentioned opening 7y.
このようにシール部材７Ｂを用いてスリット部材７を構成することにより、スリット部材７と誘電体板８との間の気密性を担保しつつ、凹部７２を形成することができる。 By constructing the slit member 7 using the sealing member 7B in this manner, it is possible to form the recess 72 while ensuring airtightness between the slit member 7 and the dielectric plate 8.
その他、本発明は前記実施形態に限られず、その趣旨を逸脱しない範囲で種々の変形が可能であるのは言うまでもない。 It goes without saying that the present invention is not limited to the above-described embodiment, and various modifications are possible without departing from the spirit of the invention.
１００・・・プラズマ処理装置
Ｗ ・・・基板
Ｐ ・・・誘導結合プラズマ
２ ・・・真空容器
３ ・・・アンテナ
７ ・・・スリット部材
７ｘ ・・・スリット
７１ ・・・外向き面
７１ａ・・・接触領域
７１ｂ・・・非接触領域
７１ｃ・・・内側面
７２ ・・・凹部
７３ ・・・枠要素
７４ ・・・柵状要素
７５ ・・・第２凹部
８ ・・・誘電体板
９ ・・・磁場透過窓
REFERENCE SIGNS LIST 100: Plasma processing apparatus W: Substrate P: Inductively coupled plasma 2: Vacuum vessel 3: Antenna 7: Slit member 7x: Slit 71: Outer surface 71a: Contact region 71b: Non-contact region 71c: Inner surface 72: Recess 73: Frame element 74: Barrier-like element 75: Second recess 8: Dielectric plate 9: Magnetic field transmission window
Claims (7)
前記真空容器の前記アンテナに臨む位置に形成された開口を塞ぐとともに、前記アンテナの長手方向に沿って複数のスリットが形成されたスリット部材と、
前記スリット部材の外側を向く外向き面に載せられ、前記スリットを前記真空容器の外側から塞ぐ誘電体板とを具備し、
前記スリット部材の外向き面において、互いに隣り合う前記スリットに挟まれた領域には、前記誘電体板に接触して前記誘電体板を支持する接触領域と、当該接触領域よりも内側に向かって凹ませた凹部からなり、前記誘電体板に接触しない非接触領域とが形成されている、プラズマ源。 A plasma source that generates plasma within a vacuum vessel by passing a high-frequency current through an antenna provided outside the vacuum vessel,
a slit member that closes an opening formed in the vacuum vessel at a position facing the antenna and has a plurality of slits formed along a longitudinal direction of the antenna;
a dielectric plate placed on an outward surface of the slit member and blocking the slit from the outside of the vacuum vessel;
A plasma source in which, on the outward surface of the slit member, in the area sandwiched between adjacent slits, a contact area that contacts the dielectric plate and supports the dielectric plate, and a non-contact area that is recessed inward from the contact area and does not contact the dielectric plate are formed.
前記凹部が、前記スリットの延在方向に沿って形成されている、請求項１乃至３のうち何れか一項に記載のプラズマ源。 The slit extends in a direction perpendicular to a longitudinal direction of the antenna,
The plasma source according to claim 1 , wherein the recess is formed along an extension direction of the slit.
前記複数のスリットが前記アンテナの長手方向に沿って形成されたスリット板と、
前記スリット板と前記誘電体板との間に介在し、前記スリット板における少なくとも１つの前記スリットとその周囲とに重なり合う開口が複数形成されたシール部材とを有し、
前記スリット及び前記開口との重なりにより生じる段差が前記凹部として形成されている、請求項１乃至５のうち何れか一項に記載のプラズマ源。 The slit member is
a slit plate having the plurality of slits formed along a longitudinal direction of the antenna;
a seal member interposed between the slit plate and the dielectric plate, the seal member having a plurality of openings formed therein, the openings overlapping at least one of the slits in the slit plate and its periphery;
The plasma source according to claim 1 , wherein a step formed by an overlap between the slit and the opening is formed as the recess.
請求項１乃至６のうち何れか一項に記載のプラズマ源とを備える、プラズマ処理装置。 The vacuum vessel;
A plasma processing apparatus comprising the plasma source according to any one of claims 1 to 6.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2001254188A (en) | 2000-03-10 | 2001-09-18 | Samco International Inc | Inductively coupled plasma treatment apparatus |
| JP2013129897A (en) | 2011-12-22 | 2013-07-04 | Samco Inc | Mask member of inductive coupling type plasma processing apparatus |
| US20140097752A1 (en) | 2012-10-09 | 2014-04-10 | Varian Semiconductor Equipment Associates, Inc. | Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield |
| JP2016143616A (en) | 2015-02-04 | 2016-08-08 | パナソニックＩｐマネジメント株式会社 | Plasma processing apparatus |
| JP2020004534A (en) | 2018-06-26 | 2020-01-09 | 東京エレクトロン株式会社 | Plasma processing apparatus |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001254188A (en) | 2000-03-10 | 2001-09-18 | Samco International Inc | Inductively coupled plasma treatment apparatus |
| JP2013129897A (en) | 2011-12-22 | 2013-07-04 | Samco Inc | Mask member of inductive coupling type plasma processing apparatus |
| US20140097752A1 (en) | 2012-10-09 | 2014-04-10 | Varian Semiconductor Equipment Associates, Inc. | Inductively Coupled Plasma ION Source Chamber with Dopant Material Shield |
| JP2016143616A (en) | 2015-02-04 | 2016-08-08 | パナソニックＩｐマネジメント株式会社 | Plasma processing apparatus |
| JP2020004534A (en) | 2018-06-26 | 2020-01-09 | 東京エレクトロン株式会社 | Plasma processing apparatus |
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