JP7102252B2 - Plasma processing equipment - Google Patents

Description

The present invention relates to a plasma processing apparatus that processes a substrate-like sample such as a semiconductor wafer while introducing a processing gas into the processing chamber in which the inside of the processing chamber in the vacuum vessel is depressurized, from a plurality of introduction holes in the processing chamber. The present invention relates to a plasma processing apparatus that introduces a processing gas to process a sample.

For some time, plasma etching processing equipment has been used in the manufacture of semiconductor integrated circuits. In the plasma etching process, the gas introduced into the processing chamber decompressed to a predetermined degree of vacuum is turned into plasma by an electric field or the like supplied from the outside of the vacuum vessel, and highly reactive particles generated in the plasma are generated in the object to be processed. Processing is performed by physically and chemically reacting with the surface of a certain wafer.

Plasma etching processing equipment is classified into CCP (Capacitively Coupled Plasma), ICP (Inductively Coupled Plasma), ECR (Electron Cyclotron Plasma), and the like according to a plasma generation method. Among these, the ECR type plasma etching processing apparatus has a feature that high-density plasma can be obtained even in a low-voltage region.

In the plasma etching process, it is required to uniformly etch the wafer in the plane in order to improve the yield of the manufactured semiconductor integrated circuit. Particularly in recent years, the level of uniformity required has become even more stringent due to the miniaturization of the dimensions of transistors inside integrated circuits and the complexity of their structures. On the other hand, the outer edge of the wafer has a different environment from the center of the wafer due to material discontinuity inside and outside the wafer and electric field concentration. Is indispensable.

In an example of the conventional wafer in-plane distribution control technique (Japanese Patent Laid-Open No. 2017-69540; hereinafter referred to as Patent Document 1), a plurality of compartments are provided above the processing chamber, and the gas type, plasma power, etc. are independently controlled in each compartment. The technology to be used is disclosed. In the above technique, plasmas having different plasma powers and the like are generated in each of a plurality of sections above the processing chamber, so that different etching results are obtained for each wafer location. As a result, the in-plane distribution of the etching process can be controlled, and the wafer can be uniformly etched in the plane.

JP-A-2017-69540

However, in the prior art described in Patent Document 1, the following points have not been sufficiently considered. That is, in the above-mentioned prior art, since the surface area is increased by providing the wall separating the processing chamber, the number of particles generated by exposing the processing chamber wall surface to plasma increases. The generated particles fall on the wafer and adhere to them, which hinders plasma etching at the relevant portion, resulting in processing defects. In particular, in the above-mentioned prior art, since the wall surface exists directly above the wafer, there is a problem that the problem of processing defects becomes more prominent.

Further, the prior art described in Patent Document 1 relates to an ICP type plasma etching processing apparatus, but when the same technique is used in an ECR type plasma etching processing apparatus, it is along the magnetic field lines existing in the processing chamber. Since the ions are transported, the number of ions that reach the wafer surface differs between the intersection of the magnetic field lines passing through the inside of the partition wall and the wafer and the intersection of the other magnetic field lines and the wafer. The above-mentioned prior art has caused a problem that so-called "transfer" occurs in which the distribution of the density of different ions affects the result of processing the wafer surface, and the processing yield is impaired. Was not fully considered.

An object of the present invention is to solve a problem of the prior art and to provide a plasma processing apparatus which reduces particles generated in a processing chamber and improves the processing yield of a wafer.

The above objectives are a processing chamber arranged inside the vacuum vessel in which plasma is formed, a sample table arranged below the processing chamber on which the wafer to be processed is placed, and an upper surface of the sample table in the processing chamber. At least one dielectric window member that is arranged to face the sample table and transmits an electric field for forming a plasma inside the processing chamber, and is arranged outside the vacuum vessel so as to surround the outer periphery of the processing chamber. A cylindrical member made of a dielectric that is arranged between a sample table and a window member inside the sample chamber and has a shape that diverges downward toward the sample table and a coil that forms a magnetic field inside the processing chamber. A plurality of gas supply ports for supplying gas for processing from between the dielectric window and the cylindrical member inside the cylindrical member, and a processing chamber in which plasma is formed from the outside of the cylindrical member. The inside of the cylindrical member is provided with a plurality of gas supply ports for supplying gas for processing , and the thickness between the lower surface and the upper surface of the window member above the space inside the cylindrical member is the outer side of the cylindrical member. This is achieved by a plasma processing device that is larger than the thickness of the space . Further, in order to solve the above problems, in the present invention, the vacuum container, the mounting table on which the sample to be processed is placed inside the vacuum container, and the dielectric placed on the upper part of the vacuum container so as to oppose the sample table. A dielectric window made of body material, a power supply unit that supplies high-frequency wave power from the top of the vacuum vessel to the inside of the vacuum vessel through the dielectric window, and an inside of the vacuum vessel that is arranged outside the vacuum vessel. In a plasma processing apparatus provided with a magnetic field generating unit that generates a magnetic field in a vacuum vessel and a gas supply unit that supplies processing gas inside the vacuum vessel, the vacuum processing apparatus is arranged between a dielectric window and a mounting table and supplied from the gas supply unit. A vacuum is formed through a shower plate in which a large number of pores are formed to supply the processed gas to the inside of the vacuum vessel and a large number of pores formed in the wall surface of the vacuum vessel to supply the processed gas supplied from the gas supply unit. Further provided with an annular gas supply unit that periodically supplies the inside of the container, and a gas separation unit that separates the processing gas supplied from the shower plate and the processing gas supplied from the annular gas supply unit inside the vacuum container. Configured.

According to the present invention, while providing a separation wall in the processing chamber, by reducing particles generated from the separation wall, processing defects of the wafer are suppressed, and in-plane distribution controllability in the wafer etching is improved. Vacuum processing equipment can be provided. Further, when the vacuum processing apparatus is an ECR type plasma etching apparatus, it is possible to provide a vacuum processing apparatus having improved in-wafer distribution controllability in which the separation wall is not transferred onto the wafer.

It is a vertical sectional view schematically showing the outline of the structure of the plasma processing apparatus which concerns on embodiment of this invention. It is a figure which shows typically the outline of the structure of the gas supply mechanism connected to the vacuum processing chamber, and the cross-sectional view of a part of the plasma processing apparatus which concerns on the Example shown in FIG. It is a vertical cross-sectional view schematically showing the outline of the structure of the part of the separation wall in the vacuum processing chamber in the vacuum processing chamber of the plasma processing apparatus which concerns on FIG. 1 shown in FIG. It is a vertical cross-sectional view schematically showing the outline of the structure of the part of the separation wall in the vacuum processing chamber in the plasma processing apparatus which concerns on the modification of the Example shown in FIG. It is a vertical cross-sectional view schematically showing the outline of the structure of the part of the separation wall in the vacuum processing chamber in the plasma processing apparatus which concerns on another modification of the Example shown in FIG.

The following is a brief description of the outline of typical embodiments disclosed below.

A processing chamber arranged inside the vacuum vessel and forming plasma inside, a sample table arranged below the processing chamber on which the wafer to be processed is placed, and facing the sample table above the upper surface of the sample table in the processing chamber. At least one dielectric window member through which an electric field for forming an electric field for forming a plasma is transmitted in the processing chamber, and a magnetic field is formed inside the processing material by being arranged around the outer periphery of the processing chamber on the outside of the vacuum vessel. A cylindrical member made of a dielectric, which is arranged between the sample table and the window member inside the sample chamber and has a shape that spreads downward toward the sample table, and this tubular member. A plurality of gas supply ports for supplying processing gas from between the dielectric window and the cylindrical member inside, and processing gas is supplied to the processing chamber where plasma is formed from the outside of the cylindrical member. It has a plurality of gas supply ports.

Further, the inner wall surface of the cylindrical member is inclined outward along the direction of the magnetic field lines of the magnetic field formed by the coil and spreads outward, and is placed on the sample table. The wafer is arranged inside a range projected from the lower end of the cylindrical member in the downward divergent direction along the direction of the magnetic field lines of the magnetic field on the inner wall surface.

Hereinafter, embodiments of the plasma vacuum processing apparatus according to the present invention will be described with reference to the drawings.

Examples of the present invention will be described with reference to FIGS. 1 to 3. FIG. 1 is a schematic view showing an example of a schematic configuration of a plasma processing apparatus according to an embodiment of the present invention.

The plasma processing apparatus 100 shown in FIG. 1 is an example of a microwave ECR plasma etching apparatus. Here, the electrodes installed inside the vacuum processing chamber 104, the electric and magnetic field generators installed outside the vacuum processing chamber 104, the power supply, and the like are schematically shown.

The plasma processing apparatus 100 according to the embodiment of the present invention shown in FIG. 1 includes a vacuum processing chamber 104. An electrode 125, which is a sample table, is installed inside the vacuum processing chamber 104, and a wafer 126, which is a material to be processed, is placed on the electrode 125. In the vacuum processing chamber 104, the gas supplied from the gas supply mechanism 105 to the vacuum processing chamber 104 is turned into plasma by the electric field and the magnetic field generated by the electric field generating means and the magnetic field generating means installed outside the vacuum processing chamber 104. As a result, the wafer 126 is subjected to plasma etching processing.

The vacuum processing chamber 104 has a structure in which a shower plate 102 is installed above the container 101 and a dielectric window 103 is further installed above the container 101, and the container 101 is hermetically sealed by the dielectric window 103.

A gas supply mechanism 105 is provided outside the vacuum processing chamber 104, and includes a first gas pipe 106 and a second gas pipe 109. The first gas pipe 106 is connected to a space 107 provided between the dielectric window 103 and the shower plate 102, and communicates with the vacuum processing chamber 104 through a plurality of pores 108 provided in the shower plate 102. .. On the other hand, the second gas pipe 109 is connected to the annular space 110 provided inside the wall of the container 101, and the vacuum processing chamber is passed through a plurality of pores 111 provided between the annular space 110 and the vacuum processing chamber 104. It communicates with 104.

A variable conductance valve 112 is provided in the lower part of the vacuum processing chamber 104, and is exhausted by a turbo molecular pump 113 connected through the variable conductance valve 112. The turbo molecular pump 113 is further connected to the roughing pump 114. The variable conductance valve 112, the turbo molecular pump 113, and the roughing pump 114 are each connected to the control unit 150 and are controlled by the control unit 150.

A pressure gauge 115 is connected to the vacuum processing chamber 104, and the control unit 150 feedback-controls the opening degree of the variable conductance valve 112 according to the value of the pressure gauge 115 to control the pressure of the vacuum processing chamber 104 to a desired value. is doing.

A microwave power supply 116 is provided above the plasma processing apparatus 100, and the frequency of the microwave power supply 116 is, for example, 2.45 GHz. The microwave generated from the microwave power supply 116 propagates to the cavity resonator 121 through the automatic matcher 117, the square waveguide 118, the square circular waveguide converter 119, and the circular waveguide 120. The automatic matching device 117 has a function of automatically suppressing the reflected wave, and the cavity resonator 121 has a function of adjusting the microwave electromagnetic field distribution to a distribution suitable for plasma processing. The microwave power supply 116 is controlled by the control unit 150.

A vacuum processing chamber 104 is provided below the cavity resonator 121 with a dielectric window 103 as a microwave introduction window and a shower plate 102 sandwiched between them, and the microwave whose distribution is adjusted by the cavity resonator 121 is generated. , Propagate to the vacuum processing chamber 104 through the dielectric window 103 and the shower plate 102.

Solenoid coils 122, 123, 124 constituting an electromagnet are arranged around the vacuum processing chamber 104 and the cavity resonator 121, and the solenoid coils 122, 123, 124 are arranged by the coil power supply 140 controlled by the control unit 150. It operates as an electromagnet by passing an electric current through it, and a magnetic field is formed inside the vacuum processing chamber 104.

When a high-frequency electric field and a magnetic field are formed inside the vacuum processing chamber 104 as described above, the strength of the magnetic field is 0 in a region where the strength of the electric field and the magnetic field has a specific relationship (for example, in the case of an electric field of 2.45 GHz). In the region of .0875T), a plasma is formed by electron cyclotron resonance (ECR), which will be described later.

The ECR will be described in detail below. The electrons existing inside the vacuum processing chamber 104 move while rotating along the magnetic field lines of the magnetic field generated by the solenoid coils 122, 123, 124 due to the Lorentz force. At this time, when the frequency of the microwave propagated from the microwave power supply 116 coincides with the frequency of the rotation, the electrons are resonantly accelerated and the plasma is effectively heated. This is called ECR.

Since the region where ECR is generated (ECR surface) can be controlled by the magnetic field distribution, the control unit 150 controls the current flowing through each of the solenoid coils 122, 123, and 124 via the coil power supply 140 to control the current inside the vacuum processing chamber 104. The magnetic field distribution can be controlled, and the plasma generation region inside the vacuum processing chamber 104 can be controlled. Further, since the diffusion of charged particles in the plasma is suppressed in the direction perpendicular to the magnetic field line, it is possible to control the diffusion of the plasma by controlling the magnetic field distribution and reduce the loss of the plasma. By these effects, the distribution of plasma above the wafer 126 can be controlled, and the uniformity of plasma processing can be improved.

The electrode 125 is located below the ECR surface and is fixed to the vacuum processing chamber 104 by a beam (not shown). The electrode 125 and the vacuum processing chamber 104 are substantially cylindrical, and the central axis of each cylinder is the same. The plasma processing device 100 is provided with a transfer device (not shown) such as a robot arm, and the wafer 126, which is a material to be processed, is transported to the upper part of the electrode 125 by the transfer device. The wafer 126 is held on the electrode 125 by electrostatic adsorption of an electrostatic adsorption electrode (not shown) formed on the upper surface of the electrode 125.

A bias high frequency power supply 127 is connected to the electrode 125 via a matching unit 128, and a bias voltage is applied to the wafer 126 through the bias high frequency power supply 127. From the bias high frequency power supply 127, a high frequency lower than the frequency of the microwave power supply 116, for example, a frequency of 400 kHz is applied.

Since the amount of ions in the plasma drawn into the wafer 126 depends on the bias voltage, the plasma processing shape is obtained by controlling the bias high frequency power supply 127 with the control unit 150 to adjust the bias voltage generated in the wafer 126. (Distribution of etching shape) can be controlled.

Further, the electrode 125 is equipped with a temperature control mechanism 129, and the plasma processing shape can also be controlled by controlling the temperature of the wafer 126 through the electrode 125.

All of the above configurations are connected to the control computer of the control unit 150, and the timing and the amount of operation are controlled so as to operate in an appropriate sequence. The detailed parameters of the operation sequence are called recipes, and control is performed based on preset recipes. A recipe usually consists of multiple steps. Processing conditions such as gas type and gas flow rate to be supplied from the gas supply mechanism 105 to the vacuum processing chamber 104 are set for each step, and each step is executed in a preset order and time.

FIG. 2 is a cross-sectional view showing a part of the vacuum processing chamber 104 according to the embodiment shown in FIG. 1 and the details of the gas supply mechanism 105 connected to the vacuum processing chamber 104.

A plurality of gas sources 130 are connected to the gas supply mechanism 105. The gas supply mechanism 105 includes a plurality of mass flow controllers 131 corresponding to each of the gas sources 130, and is connected to each of the corresponding gas sources 130. Each of the mass flow controllers 131 includes a first valve 132 and a second valve 133, the first valve 132 having a first gas pipe 106, and the second valve 133 having a second gas pipe 109, respectively. Communicating.

The gas supplied from the gas source 130 to the first gas pipe 106 is introduced into the space 107 surrounded by the dielectric window 103 and the shower plate 102, and is passed through the pores 108 of the shower plate 102 to the center of the vacuum processing chamber 104. It is supplied from the vicinity.

On the other hand, the gas supplied from the gas source 130 to the second gas pipe 109 is introduced into the annular space 110 inside the wall of the container 101, and through the pores 111 formed in the container 101, the outer edge portion of the vacuum processing chamber 104. Supplied from. The diameters of the pores 108 and 111 are reduced so as to reduce the conductance, and the vacuum processing chamber is formed from any of the pores 108 and 111 regardless of the positions of the first gas pipe 106 and the second gas pipe 109. The gas is evenly supplied to the inside of the 104.

The gas supply mechanism 105 controls each mass flow controller 131, each first valve 132, each and second valve 133 according to a recipe preset by the control unit 150, so that the first gas pipe 106 The type, flow rate, and supply time of the gas supplied to the second gas pipe 109 are controlled.

The shower plate 102 is provided with a separation wall 134 at the bottom. The separation wall 134 is a reverse funnel-shaped cylinder whose diameter increases as it approaches the wafer 126 as described below. The shape of the separation wall 134 is substantially axisymmetric, and the position of the axis of symmetry coincides with the position of the central axis of the vacuum processing chamber 104. Further, the separation wall 134 is made of a dielectric material and does not shield microwaves.

The region (ECR surface 136) where ECR is generated inside the vacuum processing chamber 104 by the separation wall 134 is separated into the inside and the outside of the separation wall 134. All the pores 108 are arranged inside the separation wall 134, and all the pores 111 are arranged outside the separation wall 134. As a result, the gas supplied to the inside of the vacuum processing chamber 104 through the pores 108 is inside the separation wall 134, and the gas supplied to the inside of the vacuum processing chamber 104 through the pores 111 is outside the separation wall 134, respectively. The plasmalized and plasmatized gases are transported to the end of the separation wall 134 on the wafer 126 side without mixing with each other.

FIG. 3 is a cross-sectional view showing details of a portion of the vacuum processing chamber 104 particularly related to plasma generation and transportation. In FIG. 3, the display of the container 101, the solenoid coils 122, 123, 124, etc. is omitted.

A magnetic field is formed by the solenoid coils 122, 123, 124 by controlling the current flowing from the coil power supply 140 to the solenoid coils 122, 123, 124 by the control unit 150. Of these, a magnetic field along the magnetic field lines 135 is formed in the vacuum processing chamber 104. Since the lengths of the solenoid coils 122, 123, 124 (see FIG. 1) surrounding the vacuum processing chamber 104 are finite, the magnetic field lines 135 are the solenoid coils 122, 123 when considered in the central axis direction of the solenoid coils 122, 123, 124. , 124 is the densest in the center, and the distance between them increases as the distance from the center increases. Therefore, the magnetic field lines 135 have a shape that expands from the shower plate 102 toward the wafer 126.

The separation wall 134 has a shape along the magnetic field line 135. Since the ions inside the vacuum processing chamber 104 generated by the plasma conversion of gas move along the magnetic field lines 135, by shaping the separation wall 134 along the magnetic field lines 135, the charged particles colliding with the separation wall 134 are reduced. , The generation of particles can be suppressed.

The inner diameter of the separation wall 134 is formed larger than the virtual reverse funnel-shaped cylinder formed by the magnetic field lines passing through the end portion 126a of the wafer 126. That is, in the cross-sectional view shown in FIG. 3, when the line along the inner wall surface of the separation wall 134 is extended toward the wafer 126, the portion at the same height as the wafer 126 is larger than the end portion 126a of the wafer 126. It shows that it passes through a position that does not intersect with the wafer 126 on the outside. As a result, the magnetic field lines 135a passing near the inner wall surface of the separation wall 134 pass outside the end portion 126a of the wafer 126 at the position of the wafer 126 placed on the electrode 125, and the shape of the separation wall 134 is the wafer 126. It can be suppressed from being transferred to the wafer. As a result, by reducing the number of particles generated from the separation wall, it has become possible to improve the in-plane distribution controllability of the wafer in plasma etching while suppressing processing defects of the wafer.

Further, the outer diameter D2 of the lower end portion of the separation wall 134 is smaller than the diameter D1 of the wafer 126. Therefore, the effect of the gas introduced from the outside of the separation wall 134 through the pores 111 can be efficiently exerted on the outer edge portion in the vicinity of the end portion 126a of the wafer 126.

The surface of the separation wall 134 may be coated with yttrium oxide (Y ₂ O ₃ ) in order to suppress the generation of particles due to plasma erosion.

With the above configuration, the gas supply mechanism 105 is controlled by the control unit 150 while suppressing the particles generated from the separation wall 134, and the pores formed in the shower plate 102 from the mass flow controller 131 via the first valve 132. Independently controlling the gas supplied from the vicinity of the center of the vacuum processing chamber 104 through 108 and the gas supplied from the outer edge portion through the pores 111 formed in the container 101 from the mass flow controller 131 via the second valve 133. Therefore, it is possible to effectively control the distribution of the gas composition and the concentration on the wafer 126 and control the distribution of the etching shape (control of the plasma processing shape).

[Modification 1]
A first modification of the embodiment of the present invention will be described with reference to FIG. Since the configurations with the same reference numerals as those shown in FIGS. 1 to 3 already described are the parts having the same functions, the description of the configurations will be omitted.

FIG. 4 shows a cross-sectional view of the separation wall 234 according to this modified example. The difference between this modification and the embodiment is that the separation wall 134 and the shower plate 102 are integrated in the embodiment, whereas the separation wall 234 is a component separated from the shower plate 202 in this modification. It is a point that has become. In this modification, the separation wall 234 is composed of a tubular portion 234a for separating the vacuum processing chamber 104 and a crossguard portion 234b for fixing to the vacuum processing chamber 104.

A shower plate 202 is arranged on the upper part of the separation wall 234. The shower plate 202 has a central portion 202a thicker than a peripheral portion 202b. The central portion 202a has a size that fits the separation wall 234, and the thickness of the central portion 202a is substantially the same as the sum of the thickness of the crossguard portion 234b of the separation wall 234 and the thickness of the peripheral portion 202b of the shower plate 202. .. Therefore, the distance that the microwave propagates in the central portion 202a of the shower plate 202 and the distance when the microwave propagates in the portion where the peripheral portion 202b of the shower plate 202 and the crossguard portion 234b of the separation wall 234 overlap are substantially the same. It is possible to suppress the difference in electric field between the inside and the outside of the tubular portion 234a of the separation wall 234.

Since the dielectric parts are scraped by plasma, they need to be replaced regularly. However, in this modification, the separation wall 234 and the shower plate 202 are separated, so the separation wall 234 and the shower plate 202 are replaced at different times. It is possible to do. Therefore, the thickness of the separation wall 234 and the thickness of the shower plate 202 can be designed independently.

[Modification 2]
FIG. 5 is a second modification of the embodiment of the present invention. As in the case of the first modification, the configuration with the same reference numerals as those already described is a portion having the same function, and thus the description of the configuration will be omitted.

FIG. 5 is a cross-sectional view of the separation wall 334 according to this modified example. The separation wall 334 is provided with an opening 337 around the region where the separation wall 334 and the ECR surface 136 intersect. Since the plasma density is high and plasma erosion is more remarkable on the ECR surface 136, it is possible to suppress the generation of particles by reducing the separation wall 334 in this region. Further, although the gas inside and outside the separation wall 334 is mixed by providing the opening 337 in the separation wall 334, since the opening 337 is only the peripheral part of the ECR surface 136, the ratio to the whole is small and the inside. Most of the effect of the separation wall 334 that separates the gas from the outside is maintained.

Although the invention made by the present inventor has been specifically described above based on the embodiment, the present invention is not limited to the above-described embodiment and includes various modifications. For example, the above-described embodiment has been described in detail in order to explain the present invention in an easy-to-understand manner, and is not necessarily limited to the one including all the described configurations.

Further, it is possible to replace a part of the configuration of one embodiment with the configuration of another embodiment, and it is also possible to add the configuration of another embodiment to the configuration of one embodiment. .. Further, it is possible to add, delete, or replace a part of the configuration of each embodiment with another configuration. It should be noted that each member and the relative size described in the drawings have been simplified and idealized in order to explain the present invention in an easy-to-understand manner, and have a more complicated shape in terms of mounting.

The structure and method described in the above embodiment are not limited to those in the above embodiment, and include various application examples.

100 Plasma processing device 102, 202 Shower plate 103 Dielectric window 104 Vacuum processing room 105 Gas supply mechanism 112 Variable conductance valve 113 Turbo molecular pump 114 Roughing pump 115 Pressure gauge 116 Microwave power supply 117 Automatic matcher 121 Cavity resonator 122, 123, 124 Electromagnetic coil 125 Electrode 126 Wafer 127 High frequency power supply for bias 129 Temperature control mechanism 130 Gas source 131 Mass flow controller 134, 234, 334 Separation wall 140 Coil power supply 150 Control unit.

Claims (10)

A processing chamber arranged inside the vacuum vessel and forming a plasma inside, a sample table arranged below the processing chamber on which the wafer to be processed is placed, and above the upper surface of the sample table in the processing chamber. A window member made of at least one dielectric, which is arranged to face the sample table and allows an electric field for forming the plasma to pass through the inside of the processing chamber, and the outer periphery of the processing chamber are surrounded by the outside of the vacuum vessel. A coil arranged in the processing chamber to form a magnetic field inside the processing chamber, and arranged between the sample table and the dielectric window member inside the processing chamber and facing downward toward the sample table. A plurality of cylindrical members made of a dielectric having a divergent shape, and a plurality of gases for processing are supplied from between the window member made of the dielectric and the cylindrical member inside the tubular member. Gas supply port and a plurality of gas supply ports for supplying processing gas to the inside of the processing chamber where the plasma is formed from the outside of the cylindrical member. A plasma processing apparatus characterized in that the thickness between the lower surface and the upper surface of the window member above the inner space is made larger than the thickness of the outer space of the cylindrical member . Below the processing chamber, which is placed inside the vacuum vessel and plasma is formed inside, and below the processing chamber.
A sample table on which the wafer to be processed is placed on the upper surface of the sample table and the sample table in the processing chamber.
The plasma is formed inside the processing chamber so as to face the sample table above the surface.
At least one dielectric window member through which an electric field is transmitted, and the outside of the vacuum vessel.
A coil arranged around the outer periphery of the processing chamber to form a magnetic field inside the processing chamber, a shower plate arranged inside the processing chamber and above the sample table, and the inside of the processing chamber. A cylindrical member made of a dielectric having a shape that spreads downward from the shower plate toward the sample table, and a cylindrical member made of the dielectric placed inside the tubular member arranged on the shower plate. A plurality of gas supply ports for supplying gas for processing from between the window member and the cylindrical member, and the inside of the processing chamber where the plasma is formed from the outside of the tubular member for processing. A plasma processing apparatus characterized by having a plurality of gas supply ports for supplying gas . The plasma processing apparatus according to claim 1 or 2 .
In the tubular member, the inner wall surface of the tubular member is inclined outward along the direction of the magnetic field lines of the magnetic field formed by the coil and spreads outward toward the sample table. A plasma processing device characterized by having a shape that becomes. The plasma processing apparatus according to any one of claims 1 to 3 .
The wafer placed on the sample table is inside a range projected from the lower end of the cylindrical member in the direction of downward divergence along the direction of the magnetic field lines of the magnetic field on the inner wall surface of the tubular member. Plasma processing equipment located in. The plasma processing apparatus according to any one of claims 1 to 4 .
It is arranged below the lower surface of the outer peripheral side portion of the window member so as to surround the outside of the tubular member, and faces the space outside the tubular member so that the processing gas is directed toward the center side of the processing chamber. A plasma processing apparatus including a ring-shaped member having the gas supply port. The plasma processing apparatus according to any one of claims 1 to 5.
An opening for communicating the space between the inside and the outside is provided between the upper end and the lower end in the height direction of the cylindrical member, and an electron cyclotron resonance surface formed by the electric field and the magnetic field is formed through the opening. Plasma processing equipment. With a vacuum container
A mounting table on which the sample to be processed is placed inside the vacuum vessel, and
A dielectric window formed of a dielectric material, which is placed on the upper part of the vacuum vessel so as to oppose the above-mentioned stand.
A power supply unit that supplies high-frequency wave power from the upper part of the vacuum vessel to the inside of the vacuum vessel through the dielectric window, and a power supply unit.
A magnetic field generating unit that is arranged outside the vacuum vessel and generates a magnetic field inside the vacuum vessel.
A plasma processing apparatus provided with a gas supply unit for supplying processing gas inside the vacuum vessel.
A shower plate arranged between the dielectric window and the above-mentioned stand and having a large number of pores formed to supply the processing gas supplied from the gas supply unit to the inside of the vacuum vessel.
An annular gas supply unit that cyclically supplies the processing gas supplied from the gas supply unit to the inside of the vacuum container through a large number of pores formed on the wall surface of the vacuum container.
A plasma processing apparatus further comprising a gas separation unit that separates the processing gas supplied from the shower plate and the processing gas supplied from the annular gas supply unit inside the vacuum vessel. The plasma processing apparatus according to claim 7, wherein the gas separation portion is attached to the shower plate, and has a cylindrical shape that expands toward the direction of the above-mentioned pedestal from the position attached to the shower plate. A plasma processing apparatus characterized by having. The plasma processing apparatus according to claim 8, wherein the outer diameter of the lower end portion of the gas separation portion closest to the previously described pedestal is larger than the outer diameter of the sample to be processed placed on the previously described pedestal. A plasma processing device characterized by being small. The plasma processing apparatus according to claim 8 or 9, wherein the gas separating portion has a cylindrical shape having a divergent shape and a line extending in the direction of the pre-described pedestal along the inner surface is a portion at the height of the pre-described pedestal. A plasma processing apparatus characterized in that the sample passes outside the outer diameter of the sample to be processed placed on the table described above.

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