JP6931985B2 - How to make a display device - Google Patents

Description

One aspect of the present invention relates to a method for manufacturing a display device.

One aspect of the present invention is not limited to the above technical fields. Examples of the technical field of one aspect of the present invention include semiconductor devices, display devices, light emitting devices, electronic devices, lighting devices, driving methods thereof, or manufacturing methods thereof.

In the present specification and the like, the semiconductor device refers to all devices that can function by utilizing the semiconductor characteristics. Transistors, semiconductor circuits, display devices, light emitting devices, arithmetic devices, storage devices, and the like are one aspect of semiconductor devices. Further, an imaging device, an electro-optical device, a power generation device (including a thin-film solar cell, an organic thin-film solar cell, etc.), and an electronic device may have a semiconductor device.

In recent years, display devices are expected to be applied to various applications. As the display device, for example, a light emitting device having a light emitting element, a liquid crystal display device having a liquid crystal element, and the like have been developed.

For example, Patent Document 1 discloses a flexible light emitting device to which an organic EL (Electroluminescence) element is applied.

Patent Document 2 has a region that reflects visible light and a region that transmits visible light, and can be used as a reflective liquid crystal display device in an environment where sufficient external light can be obtained, and sufficient external light can be obtained. A semi-transmissive liquid crystal display device that can be used as a transmissive liquid crystal display device in an environment where the above is not obtained is disclosed.

Japanese Unexamined Patent Publication No. 2014-197522 Japanese Unexamined Patent Publication No. 2011-191750

One of the problems of one aspect of the present invention is to provide a method for manufacturing a display device at low cost and with high mass productivity. One of the problems of one aspect of the present invention is to manufacture a display device using a large format substrate. One aspect of the present invention is to manufacture a display device at a low temperature. One of the problems of one aspect of the present invention is to provide a method for manufacturing a novel display device.

One aspect of the present invention is to provide a display device having low power consumption. One of the problems of one aspect of the present invention is to provide a display device having high visibility regardless of the ambient brightness. One aspect of the present invention is to provide a display device having good display quality. One aspect of the present invention is to provide a highly convenient display device. One aspect of the present invention is to provide a highly reliable display device. One aspect of the present invention is to make the display device thinner or lighter. One aspect of the present invention is to provide a display device having flexibility or a curved surface. One aspect of the present invention is to provide a display device that is not easily damaged. One aspect of the present invention is to provide a new display device, an electronic device, or the like.

The description of these issues does not prevent the existence of other issues. One aspect of the present invention does not necessarily have to solve all of these problems. Issues other than these can be extracted from the description, drawings, and claims.

One aspect of the present invention is a method for manufacturing a display device having a first display element and a second display element between the first substrate and the second substrate.

(1) The method for manufacturing a display device according to one aspect of the present invention includes a step of forming a common electrode having a function of transmitting visible light on a first substrate and forming a first layer on the manufactured substrate. A step of forming a second layer on the first layer, a step of forming a pixel electrode having a function of reflecting visible light on the second layer, and insulation on the pixel electrode. A step of forming a layer, a step of forming a second display element having a function of emitting visible light on the insulating layer, and a step of sealing the second display element using the second substrate. The process of separating the first layer and the second layer by irradiating light, and the first substrate and the second substrate with the liquid crystal layer arranged between the common electrode and the pixel electrode. It has a step of forming a first display element by laminating the above. Prior to the step of forming the common electrode, there may be a step of forming a functional layer on the first substrate. The functional layer is formed so as to have one or both of the detection element and the colored layer.

(2) The method for manufacturing a display device according to one aspect of the present invention includes a step of forming a first release layer on a first production substrate and a function of transmitting visible light on the first release layer. A step of forming a common electrode having a common electrode, a step of forming a second release layer on the second production substrate, and a step of forming a pixel electrode having a function of reflecting visible light on the second release layer. A step of forming an insulating layer on the pixel electrode, a step of forming a second display element having a function of emitting visible light on the insulating layer, and a second display using the second substrate. A step of sealing the element, a step of separating the second fabrication substrate and the second substrate by using the second release layer, and a state in which the liquid crystal layer is arranged between the common electrode and the pixel electrode. , The step of forming the first display element by laminating the first fabrication substrate and the second substrate, and using the first release layer, the first fabrication substrate and the second substrate are attached to each other. It includes a step of separating and a step of bonding the first substrate and the second substrate in a state where the first display element is arranged between the first substrate and the second substrate. One or both of the first release layer and the second release layer is formed so as to have a first layer and a second layer on the first layer. In one or both of the step of separating the second manufacturing substrate and the second substrate and the step of separating the first manufacturing substrate and the second substrate, light is irradiated to the first step. Layer and the second layer are separated.

In the above (2), there may be a step of forming the first functional layer on the first peeling layer before the step of forming the common electrode. The first functional layer is formed so as to have one or both of the detection element and the colored layer. The first substrate may have a surface on which a second functional layer is provided. The step of bonding the first substrate and the second substrate is performed in a state where the second functional layer is arranged between the first substrate and the second substrate. The second functional layer is formed so as to have one or both of the light diffusing layer and the polarizing plate.

Alternatively, in the above (2), the process includes a step of forming a third release layer on the third production substrate and a step of forming a functional layer on the third release layer, and further, the first Before the step of bonding the substrate and the second substrate, the third fabrication substrate and the first substrate are arranged in a state where the third release layer is arranged between the third fabrication substrate and the first substrate. There may be a step of bonding the above and a step of separating the third production substrate and the first substrate by using the third release layer. The step of bonding the first substrate and the second substrate is performed in a state where the functional layer is arranged between the first substrate and the second substrate. The functional layer is formed so as to have one or more of a detection element, a light diffusion layer, and a polarizing plate.

In the above (2), it is preferable to use a glass substrate having a thickness of 0.1 mm or more and less than 0.5 mm as the first substrate. Alternatively, in the above (2), it is preferable to use a resin substrate having a thickness of 1 μm or more and 200 μm or less as the first substrate.

In each of the above-mentioned manufacturing methods, it is preferable that the antireflection member is provided on the surface of the first substrate opposite to the surface on the second substrate side. The antireflection member may be provided so as to have a convex portion.

In each of the above-mentioned production methods, it is preferable that the liquid crystal layer is provided so as to have a dichroic dye.

In each of the above-mentioned manufacturing methods, it is preferable to have a step of forming a transistor having a metal oxide in the channel forming region on the insulating layer before the step of forming the second display element.

In each of the above-mentioned manufacturing methods, after the step of separating the first layer and the second layer, there may be a step of removing the second layer remaining on the exposed surface of the laminate including the second substrate. preferable. In the step of removing the second layer, it is preferable that ashing is performed.

In each of the above-mentioned production methods, it is preferable that the second layer is formed so as to have a region having a thickness of 0.1 μm or more and 5 μm or less.

In each of the above-mentioned production methods, a laser beam is used as the light, and the laser beam is irradiated to the interface between the first layer and the second layer or the vicinity thereof, so that the first layer and the second layer are formed. And are preferably separated.

In each of the above fabrication methods, the first layer is preferably formed to have one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin. The first layer is preferably formed so as to have one or both of titanium and titanium oxide. The first layer is preferably formed so as to have a laminated structure of titanium and titanium oxide.

In each of the above-mentioned production methods, it is preferable that the second layer is formed so as to have a residue of the compound represented by the structural formula (100).

In each of the above-mentioned manufacturing methods, the second layer is formed so as to have an opening, a conductive layer is formed so as to cover the opening, and the first layer and the second layer are separated to be conductive. It is preferable that the layer is exposed.

In each of the above-mentioned production methods, it is preferable that the light is irradiated so that the wavelength region has 180 nm or more and 450 nm or less. The light is preferably irradiated so that the wavelength region has 308 nm or its vicinity. The light is preferably emitted using a laser device. The light is preferably emitted using a linear laser device. The light is preferably irradiated with an energy density of ^{250 mJ / cm 2} or more and 360 mJ / cm ^{2 or less.}

According to one aspect of the present invention, it is possible to provide a method for manufacturing a display device at low cost and with high mass productivity. According to one aspect of the present invention, a display device can be manufactured using a large format substrate. According to one aspect of the present invention, the display device can be manufactured at a low temperature. According to one aspect of the present invention, a method for producing a novel display device can be provided.

According to one aspect of the present invention, a display device having low power consumption can be provided. According to one aspect of the present invention, it is possible to provide a display device having high visibility regardless of the ambient brightness. According to one aspect of the present invention, it is possible to provide a display device having good display quality. According to one aspect of the present invention, a highly convenient display device can be provided. According to one aspect of the present invention, a highly reliable display device can be provided. According to one aspect of the present invention, the display device can be made thinner or lighter. According to one aspect of the present invention, it is possible to provide a display device having flexibility or a curved surface. According to one aspect of the present invention, it is possible to provide a display device that is not easily damaged. According to one aspect of the present invention, a new display device, an electronic device, or the like can be provided.

The description of these effects does not preclude the existence of other effects. One aspect of the present invention does not necessarily have all of these effects. It is possible to extract effects other than these from the description, drawings, and claims.

The perspective view which shows an example of the display device. FIG. 5 is a cross-sectional view showing an example of a display device. The flow chart which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. The flow chart which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. The flow chart which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. The cross-sectional view which shows an example of the manufacturing method of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. FIG. 5 is a cross-sectional view showing an example of a display device. The figure which shows an example of a laser irradiation unit. The figure which shows an example of a pixel unit. The figure which shows an example of a pixel unit. The figure which shows an example of the operation mode. The figure which shows an example of a display device and an example of a pixel. The circuit diagram which shows an example of the pixel circuit of a display device. A circuit diagram showing an example of a pixel circuit of a display device and a diagram showing an example of a pixel. A block diagram and a timing chart diagram of the touch sensor. Block diagram and timing chart diagram of the display device. The figure explaining the operation of a display device and a touch sensor. The figure explaining the operation of a display device and a touch sensor. The figure which shows an example of an electronic device. The figure which shows an example of an electronic device.

The embodiment will be described in detail with reference to the drawings. However, the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the form and details of the present invention can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention is not construed as being limited to the description of the embodiments shown below.

In the configuration of the invention described below, the same reference numerals are commonly used between different drawings for the same parts or parts having similar functions, and the repeated description thereof will be omitted. Further, when referring to the same function, the hatch pattern may be the same and no particular reference numeral may be added.

In addition, the position, size, range, etc. of each configuration shown in the drawings may not represent the actual position, size, range, etc. for the sake of easy understanding. Therefore, the disclosed invention is not necessarily limited to the position, size, range, etc. disclosed in the drawings.

The word "membrane" and the word "layer" can be interchanged with each other in some cases or depending on the situation. For example, the term "conductive layer" can be changed to the term "conductive layer". Alternatively, for example, the term "insulating film" can be changed to the term "insulating layer".

In the present specification and the like, a metal oxide is a metal oxide in a broad expression. Metal oxides are classified into oxide insulators, oxide conductors (including transparent oxide conductors), oxide semiconductors (also referred to as Oxide Semiconductor or simply OS) and the like. For example, when a metal oxide is used in the semiconductor layer of a transistor, the metal oxide may be referred to as an oxide semiconductor. That is, when it is described as an OS FET, it can be rephrased as a transistor having a metal oxide or an oxide semiconductor.

Further, in the present specification and the like, a metal oxide having nitrogen may also be collectively referred to as a metal oxide. Further, a metal oxide having nitrogen may be referred to as a metal oxynitride.

(Embodiment 1)
In the present embodiment, a display device according to one aspect of the present invention and a method for manufacturing the display device will be described with reference to FIGS. 1 to 37.

≪Overview of display device and its manufacturing method≫
One aspect of the present invention is a method for manufacturing a display device having a first display element and a second display element between the first substrate and the second substrate.

The display device of the present embodiment includes a first display element that reflects visible light and a second display element that emits visible light.

The display device of the present embodiment has a function of displaying an image by one or both of the light reflected by the first display element and the light emitted by the second display element.

As the first display element, an element that reflects and displays external light can be used. Since such an element does not have a light source, it is possible to extremely reduce the power consumption during display.

As the first display element, a reflective liquid crystal element can be typically used. Alternatively, as the first display element, in addition to a shutter type MEMS (Micro Electro Mechanical System) element and an optical interference type MEMS element, a microcapsule type, an electrophoresis method, an electrowetting method, and an electron powder fluid (registered trademark). An element or the like to which a method or the like is applied can be used.

It is preferable to use a light emitting element as the second display element. Since the brightness and chromaticity of the light emitted by the light emitting element are not affected by the external light, the color reproducibility is high (the color gamut is wide), and high contrast and vivid display can be performed.

As the second display element, for example, a self-luminous light emitting element such as an OLED (Organic Light Emitting Dide), an LED (Light Emitting Dide), a QLED (Quantum-dot Light Emitting Dide), or a semiconductor laser can be used.

The display device of the present embodiment has a first mode for displaying an image using only the first display element, a second mode for displaying an image using only the second display element, and a first mode. It has a third mode for displaying an image using a display element and a second display element, and these modes can be switched automatically or manually for use.

In the first mode, an image is displayed using the first display element and external light. The first mode is an extremely low power consumption mode because it does not require a light source. For example, when external light is sufficiently incident on the display device (such as in a bright environment), the light reflected by the first display element can be used for display. For example, it is effective when the external light is sufficiently strong and the external light is white light or light in the vicinity thereof. The first mode is a mode suitable for displaying characters. Further, since the first mode uses the light reflected from the outside light, the display can be displayed in a manner that is easy on the eyes, and the effect that the eyes are not tired is obtained.

In the second mode, an image is displayed by utilizing the light emitted by the second display element. Therefore, extremely vivid (high contrast and high color reproducibility) display can be performed regardless of the illuminance and the chromaticity of external light. For example, it is effective when the illuminance is extremely low, such as at night or in a dark room. In addition, when the surroundings are dark, the user may feel dazzling when the display is bright. In order to prevent this, it is preferable to perform display with reduced brightness in the second mode. As a result, in addition to suppressing glare, power consumption can also be reduced. The second mode is a mode suitable for displaying vivid images (still images and moving images) and the like.

In the third mode, display is performed using both the reflected light from the first display element and the light emission from the second display element. It is possible to reduce the power consumption as compared with the second mode while displaying more vividly than the first mode. For example, it is effective when the illuminance is relatively low, such as under indoor lighting, in the morning or evening time, or when the chromaticity of the outside light is not white.

With such a configuration, it is possible to realize a highly convenient display device with high visibility regardless of the ambient brightness. Specifically, it is possible to realize a highly convenient display device with high visibility both in outside light and indoors.

In the present embodiment, an example in which a reflective liquid crystal element is manufactured as the first display element and a light emitting element (specifically, an EL element) is manufactured as the second display element is shown.

The method for manufacturing the display device of the present embodiment includes a step of forming a common electrode having a function of transmitting visible light on the first substrate, and a step of forming a first layer on the manufactured substrate. A step of forming a second layer on the first layer, a step of forming a pixel electrode having a function of reflecting visible light on the second layer, and a step of forming an insulating layer on the pixel electrode. A step of forming a second display element having a function of emitting visible light on the insulating layer, a step of sealing the second display element using the second substrate, and irradiating light. Therefore, the step of separating the first layer and the second layer and the state where the liquid crystal layer is arranged between the common electrode and the pixel electrode are bonded to the first substrate and the second substrate. The process includes a step of forming the first display element.

Here, in the configuration in which the display panel having the first display element and the display panel having the second display element are simply bonded together, glass or resin is placed between the first display element and the second display element. Since there is a thick layer (a layer mainly used as a substrate) such as, it is difficult to reduce the distance between the first display element and the second display element.

On the other hand, in the manufacturing method of the display device of the present embodiment, the manufacturing substrate is peeled off, and the pixel electrodes of the first display element, the second display element, the transistor, and the like are transposed from the manufacturing substrate to the second substrate. Has a step to do. Then, by bonding the first substrate provided with the common electrode of the first display element and the second substrate with the liquid crystal layer sandwiched between them, the first display element and the second substrate are sandwiched between the pair of substrates. Display elements can be arranged. As a result, there is no thick substrate or the like between the first display element and the second display element, and the distance between the first display element and the second display element can be shortened. For example, when the first display element is a reflective liquid crystal element and the second display element is a light emitting element, the distance between the liquid crystal element and the light emitting element in the thickness direction is less than 30 μm, preferably less than 10 μm, and further. It can be preferably less than 5 μm. The distance in the thickness direction is, for example, the shortest distance between the reflection electrode of the liquid crystal element and the pixel electrode of the light emitting element.

The first display element emits reflected light toward the first substrate side. The second display element emits light toward the first substrate side. When the distance between the first display element and the second display element is short, the distance between the first substrate and the second display element is also short, and the brightness of the second display element can be increased. Further, it is possible to suppress the attenuation and quenching of the light emitted by the second display element. As a result, the light extraction efficiency of the display device can be improved. Alternatively, when displaying using the first display element and the second display element at the same time, or when displaying by using them alternately, the display using the first display element and the display using the second display element. The parallax that occurs between and can be reduced.

In the manufacturing method of the display device of the present embodiment, it is preferable that the pixel electrodes of the first display element are first formed on the manufacturing substrate, and then the transistor, the second display element, and the like are formed. As a result, the pixel electrode can be formed flat without being affected by the unevenness caused by the transistor, the second display element, or the like.

By forming the pixel electrodes flat, it is possible to reduce variations in the initial orientation of the liquid crystal display and suppress display defects. Further, also in the contact portion between the transistor and the pixel electrode, since the pixel electrode is flat, it is possible to suppress the orientation failure of the liquid crystal in the contact portion. Therefore, it is possible to suppress the reduction of the aperture ratio due to the poor orientation of the liquid crystal display.

For example, if a region where the initial orientation of the liquid crystal is difficult to align is used for display, the contrast may decrease. Further, when a region where the initial orientation of the liquid crystal is difficult to align occurs between two adjacent pixels, the reduction in contrast can be suppressed by covering the region with a light-shielding layer or the like, but the aperture ratio may decrease. .. On the other hand, in the method of manufacturing the display device of the present embodiment, since the pixel electrodes can be formed flat, the alignment film can also be formed flat. Defects in orientation processing such as rubbing treatment are unlikely to occur, and it becomes easy to align the initial orientation even at the end of the pixel electrode. It is possible to suppress the occurrence of a region where the initial orientation of the liquid crystal is difficult to align between two adjacent pixels. Therefore, the aperture ratio can be increased, and the display device can be easily made high-definition.

Further, in order to suppress the influence of the unevenness, it is not necessary to provide a thick insulating film having a flattening function between the transistor, the second display element, or the like and the pixel electrode. Therefore, the distance between the first display element and the second display element can be shortened.

Since the distance between the pixel electrode of the liquid crystal element and the light emitting element can be brought close to each other, it is possible to achieve both a high viewing angle characteristic in the display device and a high aperture ratio of the liquid crystal element. In addition, the total aperture ratio of the liquid crystal element and the light emitting element can be increased. In addition, the display device can be made thinner.

Alternatively, the method for manufacturing the display device of the present embodiment is common in that it has a step of forming a first release layer on the first production substrate and a function of transmitting visible light on the first release layer. A step of forming an electrode, a step of forming a second release layer on the second production substrate, and a step of forming a pixel electrode having a function of reflecting visible light on the second release layer. A step of forming an insulating layer on a pixel electrode, a step of forming a second display element having a function of emitting visible light on the insulating layer, and a step of forming a second display element using a second substrate. The step of sealing, the step of separating the second production substrate and the second substrate by using the second release layer, and the step of arranging the liquid crystal layer between the common electrode and the pixel electrode, the first step. The process of forming the first display element by laminating the first manufactured substrate and the second substrate, and the first release layer are used to separate the first manufactured substrate and the second substrate. It includes a step and a step of bonding the first substrate and the second substrate in a state where the first display element is arranged between the first substrate and the second substrate. One or both of the first release layer and the second release layer is formed so as to have a first layer and a second layer on the first layer. In one or both of the step of separating the second manufacturing substrate and the second substrate and the step of separating the first manufacturing substrate and the second substrate, light is irradiated to the first step. Layer and the second layer are separated.

It is preferable that the thickness of the first substrate, which is the substrate on the display surface side, is sufficiently thin. For the first substrate, for example, it is preferable to apply a glass substrate having a thickness of 0.1 mm or more and less than 0.5 mm, preferably 0.1 mm or more and 0.3 mm or less, a resin substrate having a thickness of 1 μm or more and 200 μm or less. .. As a result, blurring of the image can be reduced and the image can be displayed clearly.

On the other hand, if the thickness of the first substrate is thin, it becomes difficult to transfer the first substrate between manufacturing devices or within the manufacturing device during the manufacturing process of the display device, and the manufacturing yield of the display device may decrease.

In the manufacturing method of the display device of the present embodiment, after arranging the first display element and the second display element between the first manufacturing substrate and the second substrate, the first manufacturing substrate is first. It is peeled off from the second substrate, and the second substrate and the first substrate are bonded together. A common electrode for the first display element, a detection element, a colored layer, and the like are formed on the first fabrication substrate, and later transferred to the first substrate. Since the first manufacturing substrate is not a component of the display device, it is possible to select a material having heat resistance suitable for the manufacturing process such as heat resistance and thickness, and a material having a thickness suitable for the manufacturing device. Therefore, in the manufacturing process of the display device, the substrate can be easily transported, and a good quality film can be formed at a sufficiently high temperature. Further, a first substrate having a thin thickness can be used, and the display quality of the display device can be improved.

<Optical member>
On the surface (outer surface) of the first substrate opposite to the surface on the second substrate side, as optical members, a polarizing plate, a retardation plate, a light diffusion layer, an antireflection member, a light collecting film, etc. One or more of them can be provided. Further, examples of the functional member other than the optical member include an antistatic film that suppresses the adhesion of dust, a water-repellent film that makes it difficult for dirt to adhere, and a hard coat film that suppresses the occurrence of scratches due to use.

The light diffusion layer has a function of diffusing the light reflected by the reflection electrode of the liquid crystal element. With this function, even a reflective liquid crystal element can develop a natural color. In addition, it is possible to display white that is close to blank paper.

Under strong light such as outdoors in fine weather, the reflection of external light on the display surface is strong, and the visibility of the light (display) emitted from the inside of the display device is reduced. By providing the antireflection member, it is possible to sufficiently suppress the reflection of external light on the display surface under strong light, and it is possible to further improve the visibility.

The antireflection member includes an antireflection layer (also referred to as AR (Anti-Reflection) layer), a low reflection layer (also referred to as LR (Low-Reflection) layer), an antiglare layer (AG (Anti-Glare) layer, and non-glare). (Also called a layer) and the like.

The AR layer has a function of reducing normal reflection (specular reflection) of external light by utilizing the interference action of light.

The AR layer is formed of a material having a refractive index different from that of the first substrate. The AR layer can be formed as a single layer or a laminate using, for example, zirconium oxide, magnesium fluoride, aluminum oxide, silicon oxide, or the like.

The AG layer has a function of reducing normal reflection (specular reflection) by diffusing the incident external light.

Examples of the method for forming the AG layer include a method of providing fine irregularities on the surface, a method of mixing materials having different refractive indexes, and a method of combining both. For example, an AG layer can be formed by mixing nanofibers such as cellulose fibers, inorganic beads such as silicon oxide, resin beads, and the like with a translucent resin.

Further, the AG layer may be provided on the AR layer. By providing the AR layer and the AG layer in a laminated manner, the function of preventing reflection and reflection of external light can be further enhanced. By using one or both of the AR layer and the AG layer, the external light reflectance on the surface of the display device may be less than 1%, preferably less than 0.3%.

<Transistor channel formation region>
The display device of the present embodiment preferably has a metal oxide in the channel forming region of the transistor. The metal oxide can function as an oxide semiconductor.

When low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) is used in the channel formation region of the transistor, it is necessary to apply a temperature of about 500 ° C. to 550 ° C., so that the resin layer is required to have heat resistance. Further, in order to alleviate damage in the process of laser crystallization, it may be necessary to thicken the resin layer.

On the other hand, a transistor using a metal oxide in the channel forming region can be formed at 350 ° C. or lower, further 300 ° C. or lower. Therefore, high heat resistance is not required for the resin layer. Therefore, the heat resistant temperature of the resin layer can be lowered, and the range of material selection is widened.

Further, a transistor using a metal oxide in the channel forming region does not require a laser crystallization step. Compared with the case of using LTPS, the process can be simplified, which is preferable.

However, the display device of one aspect of the present invention is not limited to the configuration in which the metal oxide is contained in the channel forming region of the transistor. For example, in the display device of the present embodiment, silicon can be used for the channel formation region of the transistor. As the silicon, amorphous silicon or crystalline silicon can be used. Examples of crystalline silicon include microcrystalline silicon, polycrystalline silicon, and single crystal silicon.

When silicon is used for the channel formation region, it is preferable to use LTPS. Polycrystalline silicon such as LTPS can be formed at a lower temperature than single crystal silicon, and has higher field effect mobility and higher reliability than amorphous silicon.

≪Overview of separation method≫
The method for producing the display device of the present embodiment includes a separation step using light irradiation. The separation method in the step will be described. The method for producing the display device according to one aspect of the present invention may include a separation step using another separation method. For example, when the separation step is performed a plurality of times, the separation step using light irradiation is performed once or more. By performing all the separation steps by the same separation method, the materials, manufacturing equipment, etc. can be made the same, and the cost may be reduced. Further, by changing the separation method depending on the separation step, it may be possible to make a difference in the force required for separation. This may allow control to occur at the desired interface at the desired timing.

In the present embodiment, first, a first material, here a metal oxide layer, is formed on the fabrication substrate. Next, a second material, here a resin layer, is formed on the metal oxide layer. Then, by irradiating with light, the metal oxide layer and the resin layer are separated.

It is preferable to use light when separating the metal oxide layer and the resin layer. Light is preferably applied to the interface between the metal oxide layer and the resin layer or its vicinity (also referred to as an interface or the vicinity of the interface). Further, the light may be irradiated into the metal oxide layer. Further, the light may be irradiated into the resin layer. In the present specification and the like, "the interface between A and B or its vicinity" and "the interface between A and B or the vicinity of the interface" include at least the interface between A and B, and the interface between A and B. From, it shall include the range within 20% of the thickness of either A or B.

By irradiating light, the interface between the metal oxide layer and the resin layer (further, in the metal oxide layer and the resin layer) is heated, and the adhesion (adhesiveness) between the metal oxide layer and the resin layer is improved. Can be lowered. Furthermore, the metal oxide layer and the resin layer can be separated.

<Irradiation of light>
Next, light irradiation will be described.

Light can be irradiated using a lamp, a laser device, or the like.

It is preferable to irradiate the laser beam using a linear laser device. Since laser devices on a production line such as low-temperature polysilicon (LTPS (Low Temperature Poly-Silicon)) can be used, these devices can be effectively used. The linear laser collects light in a rectangular elongated shape (formed into a linear laser beam) and irradiates the interface between the metal oxide layer and the resin layer with light.

The light is preferably irradiated so that the wavelength region has 180 nm or more and 450 nm or less. It is more preferable that the light is irradiated so that the wavelength region has 308 nm or its vicinity.

The energy density of the light is preferably from 250 mJ / cm ² or more 400 mJ / cm ² or less, 250 mJ / cm ² or more 360 mJ / cm ² or less being more preferred.

When irradiating light using a laser device, the number of shots of the laser beam radiated to the same location can be 1 shot or more and 50 shots or less, preferably more than 1 shot and 10 shots or less, and more than 1 shot. 5 shots or less is more preferable.

At both ends of the beam in the short axis direction, there are portions with low light intensity. Therefore, it is preferable to provide an overlapping portion between one shot and the next shot, which is equal to or larger than the width of the portion where the light intensity is low. Therefore, the number of shots of the laser beam is preferably 1.1 shots or more, and more preferably 1.25 shots or more.

In the present specification, the number of shots of the laser beam refers to the number of times the laser beam is irradiated to a certain point (region), and is determined by the beam width, the scan speed, the frequency, the overlap rate, and the like. Further, there is an overlapping portion between the pulses moving the linear beam in a certain scanning direction, that is, between one shot and the next shot, and the overlapping ratio is the overlap ratio. The closer the overlap rate is to 100%, the larger the number of shots, the farther away, the smaller the number of shots, and the faster the scanning speed, the smaller the number of shots.

The number of shots of the laser beam of 1.1 shots means that there is an overlap with a width of about 1/10 of the beam between two consecutive shots, and it can be said that the overlap rate is 10%. Similarly, 1.25 shots means that there is an overlap with a width of about a quarter of the beam between two consecutive shots, and it can be said that the overlap rate is 25%.

Here, the energy density of the light irradiated in the process of laser crystallization of LTPS is high, and examples ^{thereof include 350 mJ / cm 2} or more and 400 mJ / cm ² or less. In addition, a large number of laser shots is required, and examples thereof include 10 shots or more and 100 shots or less.

On the other hand, in the present embodiment, the irradiation of light performed to separate the metal oxide layer and the resin layer can be performed with a lower energy density or a smaller number of shots than the conditions used in the laser crystallization step. .. Therefore, the number of substrates that can be processed by the laser device can be increased. Further, it is possible to reduce the running cost of the laser device, such as reducing the frequency of maintenance of the laser device. Therefore, it is possible to reduce the manufacturing cost of the display device and the like.

Further, since the light irradiation is performed with an energy density lower than the conditions used in the laser crystallization step or a small number of shots, the damage to the substrate due to the laser light irradiation can be reduced. Therefore, even if the substrate is used once, the strength does not easily decrease and the substrate can be reused. Therefore, it is possible to reduce the cost.

Further, in the present embodiment, the metal oxide layer is arranged between the production substrate and the resin layer. By using the metal oxide layer, it may be possible to irradiate light with a lower energy density or a smaller number of shots as compared with the case where the metal oxide layer is not used.

When irradiating light through the production substrate, if foreign matter such as dust adheres to the light irradiation surface of the production substrate, uneven light irradiation occurs, a portion having low peelability is formed, and the metal oxide layer and the metal oxide layer are formed. The yield of the process of separating from the resin layer may decrease. Therefore, it is preferable to clean the light-irradiated surface before or during the light irradiation. For example, the light-irradiated surface of the production substrate can be cleaned with an organic solvent such as acetone, water, or the like. Alternatively, the gas may be sprayed using an air knife. As a result, uneven light irradiation can be reduced and the yield of separation can be improved.

<Resin layer>
By forming the resin layer thinly, a display device can be manufactured at low cost. In addition, the weight and thickness of the display device can be reduced. In addition, the flexibility of the display device can be increased. For example, the thickness of the resin layer may be 0.1 μm or more and 5 μm or less.

The transparency of visible light in the resin layer is not particularly limited. For example, it may be a colored layer or a transparent layer. Here, when the resin layer is located on the display surface side of the display device, if the resin layer is colored (colored), the light extraction efficiency is lowered, the color of the extracted light is changed, and the display quality is deteriorated. Problems such as deterioration may occur. When the thickness of the resin layer is thin, the transparency of visible light of the resin layer can be increased, which is preferable.

Further, the resin layer can be removed by using a wet etching apparatus, a dry etching apparatus, an ashing apparatus or the like. In particular, it is preferable to remove the resin layer by performing ashing using oxygen plasma. When the thickness of the resin layer is thin, the time required for the step of removing the resin layer can be shortened, which is preferable.

In this embodiment, a metal oxide layer is provided between the production substrate and the resin layer. Since the metal oxide layer has a function of absorbing light, the effect of light irradiation can be obtained even if the light absorption rate of the resin layer is low. Therefore, a resin layer having a high visible light transmittance can be used. Therefore, even if the resin layer is located on the display surface side of the display device, high display quality can be realized. Further, in order to improve the display quality, the step of removing the colored (colored) resin layer can be reduced. In addition, the range of choices for the material of the resin layer is widened.

The average value of the light transmittance in the wavelength range of 450 nm or more and 700 nm or less of the resin layer is preferably 70% or more and 100% or less, preferably 80% or more and 100% or less, and more preferably 90% or more and 100% or less.

In the present embodiment, a transistor or the like is formed at a temperature equal to or lower than the heat resistant temperature of the resin layer. The heat resistance of the resin layer can be evaluated, for example, by the weight loss rate due to heating, specifically, the 5% weight loss temperature or the like. In the peeling method and the manufacturing method of the display device of the present embodiment, the maximum temperature during the process can be lowered. For example, in the present embodiment, the 5% weight loss temperature of the resin layer may be set to 200 ° C. or higher and 650 ° C. or lower, 200 ° C. or higher and 500 ° C. or lower, 200 ° C. or higher and 400 ° C. or lower, or 200 ° C. or higher and 350 ° C. or lower. can. Therefore, the range of material selection is widened. The 5% weight loss temperature of the resin layer may be higher than 650 ° C.

<< Display device configuration example 1 >>
Hereinafter, the display device 300A will be described with reference to FIGS. 1 and 2.

FIG. 1 is a schematic perspective view of the display device 300A. The display device 300A has a configuration in which a substrate 351 and a substrate 361 are bonded together. In FIG. 1, the substrate 361 is clearly indicated by a broken line.

The display device 300A includes a display unit 362, a circuit 364, wiring 365, and the like. FIG. 1 shows an example in which an IC (integrated circuit) 373 and an FPC 372 are mounted on the display device 300A. Therefore, the configuration shown in FIG. 1 can be said to be a display module having a display device 300A, an IC, and an FPC.

As the circuit 364, for example, a scanning line drive circuit can be used.

The wiring 365 has a function of supplying signals and electric power to the display unit 362 and the circuit 364. The signal and power are input to the wiring 365 from the outside via the FPC 372 or from the IC 373.

FIG. 1 shows an example in which an IC 373 is provided on a substrate 351 by a COG (Chip On Glass) method, a COF (Chip on Film) method, or the like. As the IC 373, an IC having, for example, a scanning line drive circuit or a signal line drive circuit can be applied. The display device 100 and the display module may be configured not to be provided with an IC. Further, the IC may be mounted on the FPC by the COF method or the like.

FIG. 1 shows an enlarged view of a part of the display unit 362. Electrodes 311b of a plurality of display elements are arranged in a matrix on the display unit 362. The electrode 311b has a function of reflecting visible light and functions as a reflecting electrode of the liquid crystal element 180.

Further, as shown in FIG. 1, the electrode 311b has an opening 451. Further, the display unit 362 has a light emitting element 170 on the substrate 351 side of the electrode 311b. The light from the light emitting element 170 is emitted to the substrate 361 side through the opening 451 of the electrode 311b. The area of the light emitting region of the light emitting element 170 and the area of the opening 451 may be equal to each other. It is preferable that one of the area of the light emitting region of the light emitting element 170 and the area of the opening 451 is larger than the other because the margin for misalignment becomes large. In particular, the area of the opening 451 is preferably larger than the area of the light emitting region of the light emitting element 170. By making the opening 451 sufficiently large, it is possible to prevent the light from the light emitting element 170 from being blocked by the electrode 311b, and to prevent the light emission of the light emitting element 170 from being wasted.

FIG. 2 shows an example of a cross section of the display device 300A shown in FIG. 1 when a part of the area including the FPC 372, a part of the area including the circuit 364, and a part of the area including the display unit 362 are cut. Is shown.

The display device 300A shown in FIG. 2 has a transistor 201, a transistor 203, a transistor 205, a transistor 206, a liquid crystal element 180, a light emitting element 170, an insulating layer 220, a colored layer 131, a colored layer 134, and the like between the substrate 351 and the substrate 361. Has. The substrate 361 and the insulating layer 220 are adhered to each other via the adhesive layer 141. The substrate 351 and the insulating layer 220 are adhered to each other via the adhesive layer 142.

The substrate 361 is provided with a colored layer 131, a light-shielding layer 132, an insulating layer 121, an electrode 113 that functions as a common electrode of the liquid crystal element 180, an alignment film 133b, an insulating layer 117, and the like. A polarizing plate 135 is provided on the outer surface of the substrate 361. The insulating layer 121 may have a function as a flattening layer. Since the surface of the electrode 113 can be made substantially flat by the insulating layer 121, the orientation state of the liquid crystal layer 112 can be made uniform. The insulating layer 117 functions as a spacer for holding the cell gap of the liquid crystal element 180. When the insulating layer 117 transmits visible light, the insulating layer 117 may be arranged so as to overlap the display area of the liquid crystal element 180.

The liquid crystal element 180 is a reflective liquid crystal element. The liquid crystal element 180 has a laminated structure in which the electrodes 311a and 311b that function as pixel electrodes, the liquid crystal layer 112, and the electrodes 113 are laminated. An electrode 311b that reflects visible light is provided in contact with the substrate 351 side of the electrode 311a. The electrode 311b has an opening 451. The electrode 311a and the electrode 113 transmit visible light. An alignment film 133a is provided between the liquid crystal layer 112 and the electrode 311a. An alignment film 133b is provided between the liquid crystal layer 112 and the electrode 113.

In the liquid crystal element 180, the electrode 311b has a function of reflecting visible light, and the electrode 113 has a function of transmitting visible light. The light incident from the substrate 361 side is polarized by the polarizing plate 135, passes through the electrode 113 and the liquid crystal layer 112, and is reflected by the electrode 311b. Then, it passes through the liquid crystal layer 112 and the electrode 113 again and reaches the polarizing plate 135. At this time, the orientation of the liquid crystal display can be controlled by the voltage applied between the electrodes 311b and 113, and the optical modulation of light can be controlled. That is, the intensity of the light emitted through the polarizing plate 135 can be controlled. Further, the light is absorbed by the colored layer 131 in a light other than the specific wavelength region, so that the light taken out becomes, for example, red light.

As shown in FIG. 2, it is preferable that the opening 451 is provided with an electrode 311a that transmits visible light. As a result, the liquid crystal layer 112 is oriented in the region overlapping the opening 451 as in the other regions, so that it is possible to prevent unintended light leakage due to poor alignment of the liquid crystal at the boundary between these regions. ..

In the connecting portion 207, the electrode 311b is electrically connected to the conductive layer 222a of the transistor 206 via the conductive layer 221b. The transistor 206 has a function of controlling the drive of the liquid crystal element 180.

A connecting portion 252 is provided in a part of the region where the adhesive layer 141 is provided. In the connecting portion 252, the electrode 311e obtained by processing the same conductive film as the electrode 311a and a part of the electrode 113 are electrically connected by the connecting body 243. Therefore, the signal or potential input from the FPC 372 connected to the substrate 351 side can be supplied to the electrode 113 formed on the substrate 361 side via the connecting portion 252.

The light emitting element 170 is a bottom emission type light emitting element. The light emitting element 170 has a laminated structure in which an electrode 191 that functions as a pixel electrode, an EL layer 192, and an electrode 193 that functions as a common electrode are laminated in this order from the insulating layer 220 side. The electrode 191 is connected to the conductive layer 222a of the transistor 205 via an opening provided in the insulating layer 214. The transistor 205 has a function of controlling the drive of the light emitting element 170. The insulating layer 216 covers the end of the electrode 191. The electrode 193 contains a material that reflects visible light, and the electrode 191 contains a material that transmits visible light. An insulating layer 194 is provided so as to cover the electrode 193. The light emitted by the light emitting element 170 is emitted to the substrate 361 side via the colored layer 134, the insulating layer 220, the opening 451 and the electrode 311a.

The liquid crystal element 180 and the light emitting element 170 can exhibit various colors by changing the color of the colored layer depending on the pixel. The display device 300A can perform color display by using the liquid crystal element 180 and the colored layer. The display device 300A can perform color display by using the light emitting element 170 and the colored layer.

In order to realize the color display, the color of the coloring layer to be combined with the light emitting element 170 and the liquid crystal element 180 may be not only a combination of red, green and blue but also a combination of yellow, cyan and magenta. For example, the colors of the colored layer combined with the light emitting element 170 may be red, green, and blue, and the colors of the colored layer combined with the liquid crystal element 180 may be cyan, magenta, and yellow. The color of the colored layer to be combined may be appropriately set according to the purpose or application. When the colored layer combined with the light emitting element 170 and the colored layer combined with the liquid crystal element 180 have different colors, it is preferable to provide an opening in the colored layer 131 so that the light emitting regions of the colored layer 131 and the light emitting element 170 do not overlap. Further, when the liquid crystal element 180 is used for black-and-white display or grayscale display, it is not necessary to form the colored layer 131.

The transistor 201, the transistor 203, the transistor 205, and the transistor 206 are all formed on the surface of the insulating layer 220 on the substrate 351 side. These transistors can be made using the same process.

The circuit electrically connected to the liquid crystal element 180 is preferably formed on the same surface as the circuit electrically connected to the light emitting element 170. As a result, the thickness of the display device can be reduced as compared with the case where the two circuits are formed on separate surfaces. Further, since the two transistors can be manufactured in the same process, the manufacturing process can be simplified as compared with the case where the two transistors are formed on different surfaces.

The pixel electrode of the liquid crystal element 180 is located opposite to the pixel electrode of the light emitting element 170 with the gate insulating layer of the transistor interposed therebetween.

Here, when a transistor 206 having a metal oxide in the channel forming region and having an extremely low off-current is applied, or when a storage element electrically connected to the transistor 206 is applied, the liquid crystal element 180 is used. Even if the writing operation to the pixels is stopped when the still image is displayed, the gradation can be maintained. That is, the display can be maintained even if the frame rate is extremely reduced. In one aspect of the present invention, the frame rate can be made extremely small, and driving with low power consumption can be performed.

The transistor 203 is a transistor (also referred to as a switching transistor or a selection transistor) that controls a pixel selection / non-selection state. The transistor 205 is a transistor (also referred to as a drive transistor) that controls the current flowing through the light emitting element 170.

Insulating layers such as an insulating layer 211, an insulating layer 212, an insulating layer 213, and an insulating layer 214 are provided on the substrate 351 side of the insulating layer 220. A part of the insulating layer 211 functions as a gate insulating layer of each transistor. The insulating layer 212 is provided so as to cover the transistor 206 and the like. The insulating layer 213 is provided so as to cover the transistor 205 and the like. The insulating layer 214 has a function as a flattening layer. The number of insulating layers covering the transistor is not limited, and may be a single layer or two or more layers.

It is preferable to use a material in which impurities such as water and hydrogen do not easily diffuse into at least one layer of the insulating layer covering each transistor. As a result, the insulating layer can function as a barrier membrane. With such a configuration, it is possible to effectively suppress the diffusion of impurities from the outside to the transistor, and a highly reliable display device can be realized.

The transistor 201, transistor 203, transistor 205, and transistor 206 include a conductive layer 221a that functions as a gate, an insulating layer 211 that functions as a gate insulating layer, a conductive layer 222a and a conductive layer 222b that function as sources and drains, and a semiconductor layer. It has 231. Here, the same hatching pattern is attached to a plurality of layers obtained by processing the same conductive film.

The transistor 201 and the transistor 205 have a conductive layer 223 that functions as a gate in addition to the configurations of the transistor 203 and the transistor 206.

A configuration in which a semiconductor layer on which a channel is formed is sandwiched between two gates is applied to the transistor 201 and the transistor 205. With such a configuration, the threshold voltage of the transistor can be controlled. The transistor may be driven by connecting two gates and supplying the same signal to them. Such a transistor can increase the field effect mobility as compared with other transistors, and can increase the on-current. As a result, a circuit capable of high-speed driving can be manufactured. Further, the occupied area of the circuit unit can be reduced. By applying a transistor with a large on-current, it is possible to reduce the signal delay in each wiring even if the number of wirings increases when the display device is enlarged or has high definition, and display unevenness is suppressed. can do.

Alternatively, the threshold voltage of the transistor can be controlled by giving a potential for controlling the threshold voltage to one of the two gates and giving a potential for driving to the other.

The structure of the transistor of the display device is not limited. The transistor included in the circuit 364 and the transistor included in the display unit 362 may have the same structure or different structures. The plurality of transistors included in the circuit 364 may all have the same structure, or two or more types of structures may be used in combination. Similarly, the plurality of transistors included in the display unit 362 may all have the same structure, or two or more types of structures may be used in combination.

It is preferable to use a conductive material containing an oxide for the conductive layer 223. Oxygen can be supplied to the insulating layer 212 by forming the conductive film forming the conductive layer 223 in an atmosphere containing oxygen. The ratio of oxygen gas in the film-forming gas is preferably in the range of 90% or more and 100% or less. The oxygen supplied to the insulating layer 212 is supplied to the semiconductor layer 231 by a subsequent heat treatment, and oxygen deficiency in the semiconductor layer 231 can be reduced.

In particular, it is preferable to use a metal oxide having a low resistance for the conductive layer 223. At this time, it is preferable to use an insulating film that releases hydrogen, for example, a silicon nitride film, or the like in the insulating layer 213. Hydrogen is supplied to the conductive layer 223 during the film formation of the insulating layer 213 or by a subsequent heat treatment, and the electrical resistance of the conductive layer 223 can be effectively reduced.

A colored layer 134 is provided in contact with the insulating layer 213. The colored layer 134 is covered with an insulating layer 214.

A connecting portion 204 is provided in a region of the substrate 351 that does not overlap with the substrate 361. In the connection portion 204, the wiring 365 is electrically connected to the FPC 372 via the connection layer 242. The connection portion 204 has the same configuration as the connection portion 207. On the upper surface of the connecting portion 204, the electrode 311c obtained by processing the same conductive film as the electrode 311a is exposed. As a result, the connection portion 204 and the FPC 372 can be electrically connected via the connection layer 242.

As the connecting layer 242, various anisotropic conductive films (ACF: Anisotropic Conductive Film), anisotropic conductive paste (ACP: Anisotropic Conductive Paste), and the like can be used.

The liquid crystal element 180 is a reflective liquid crystal element. Therefore, a circular polarizing plate is used as the polarizing plate 135. As the circularly polarizing plate, for example, a linearly polarizing plate and a 1/4 wavelength retardation plate laminated can be used. Further, by adjusting the cell gap, orientation, driving voltage, etc. of the liquid crystal element used for the liquid crystal element 180 according to the type of the polarizing plate, a desired contrast can be realized. Further, depending on the purpose, application, element configuration, etc., a linear polarizing plate may be used instead of the circular polarizing plate.

Glass, quartz, ceramic, sapphire, organic resin and the like can be used for the substrate 351 and the substrate 361, respectively. When a flexible material is used for the substrate 351 and the substrate 361, the flexibility of the display device can be increased.

It is preferable that the thickness of the substrate constituting the display device is sufficiently thin. For the substrate, for example, it is preferable to apply a glass substrate having a thickness of 0.1 mm or more and less than 0.5 mm, preferably 0.1 mm or more and 0.3 mm or less, a resin substrate having a thickness of 1 μm or more and 200 μm or less. By reducing the thickness of the substrate, the display device can be made thinner and lighter. Further, by reducing the thickness of the substrate on the display surface side, blurring of the image can be reduced and the image can be displayed clearly.

The liquid crystal element 180 is preferably driven using, for example, a guest-host liquid crystal mode. When using the guest-host liquid crystal mode, it is not necessary to use a polarizing plate. Since the absorption of light by the polarizing plate can be reduced, the light extraction efficiency can be improved and the display on the display device can be brightened.

The liquid crystal material preferably has a dichroic dye. A liquid crystal material containing a dichroic dye is called a guest host liquid crystal. Specifically, as the guest-host liquid crystal, a material having a large absorbance in the major axis direction of the molecule and a small absorbance in the minor axis direction orthogonal to the major axis direction can be used for the bicolor dye. Preferably, a material having a dichroic ratio of 10 or more can be used for the dichroic dye, and more preferably, a material having a dichroic ratio of 20 or more can be used for the dichroic dye.

For example, azo dyes, anthraquinone dyes, dioxazine dyes and the like can be used as dichroic dyes. Alternatively, a structure in which two liquid crystal layers containing a homogenically oriented dichroic dye are stacked so that the orientation directions are orthogonal to each other can be used for the layer containing the liquid crystal material. This makes it easier to absorb light in all directions. Alternatively, the contrast can be increased.

Further, a phase transition type guest host liquid crystal or a structure in which droplets containing the guest host liquid crystal are dispersed in a polymer may be used as the liquid crystal material.

The liquid crystal element 180 is not limited to the guest-host liquid crystal mode, and may be driven by a driving method such as a TN (Twisted Nematic) mode, an OCB (Optically Compensated Birefringence) mode, or a vertical orientation (VA) mode.

As the vertical orientation mode, an MVA (Multi-Domain Vertical Alignment) mode, a PVA (Patterned Vertical Alignment) mode, an ASV (Advanced Super View) mode, and the like can be used.

As the liquid crystal element 180, other liquid crystal elements to which various modes are applied can be used. For example, IPS (In-Plane-Switching) mode, VA-IPS mode, FFS (Fringe Field Switching) mode, ASM (Axially Cymetrically named Micro-cell) mode, FLC (Ferroelectric Liquid Crystal Display) mode , STN (Super Twisted Nematic) mode, TBA (Transverse Bend Alignment) mode, ECB (Electricularly Controlled Birefringence) mode and the like can be used.

The liquid crystal element is an element that controls the transmission or non-transmission of light by the optical modulation action of the liquid crystal. The optical modulation action of the liquid crystal is controlled by an electric field applied to the liquid crystal (including a horizontal electric field, a vertical electric field, or an oblique electric field). The liquid crystal used for the liquid crystal element includes a thermotropic liquid crystal, a low molecular weight liquid crystal, a high molecular weight liquid crystal, a high molecular weight dispersed liquid crystal (PDLC: Polymer Dispersed Liquid Crystal), a high molecular weight network type liquid crystal (PNLC: Polymer Network Liquid Crystal), and a strong dielectric. Sexual liquid crystal, anti-strong dielectric liquid crystal and the like can be used. Depending on the conditions, these liquid crystal materials exhibit a cholesteric phase, a smectic phase, a cubic phase, a chiral nematic phase, an isotropic phase and the like.

As the liquid crystal material, either a positive type liquid crystal display or a negative type liquid crystal display may be used, and the optimum liquid crystal material may be used according to the applicable mode and design.

An alignment film can be provided to control the orientation of the liquid crystal display. When the transverse electric field method is adopted, a liquid crystal showing a blue phase that does not use an alignment film may be used. The blue phase is one of the liquid crystal phases, and is a phase that appears immediately before the transition from the cholesteric phase to the isotropic phase when the temperature of the cholesteric liquid crystal is raised. Since the blue phase is expressed only in a narrow temperature range, a liquid crystal composition mixed with a chiral agent of several weight% or more is used for the liquid crystal in order to improve the temperature range. A liquid crystal composition containing a liquid crystal exhibiting a blue phase and a chiral agent has a short response rate and is optically isotropic. Further, the liquid crystal composition containing the liquid crystal exhibiting the blue phase and the chiral agent does not require an orientation treatment and has a small viewing angle dependence. In addition, since it is not necessary to provide an alignment film, the rubbing process is not required, so that electrostatic breakdown caused by the rubbing process can be prevented, and defects and breakage of the liquid crystal display device during the manufacturing process can be reduced. ..

A front light may be provided outside the polarizing plate 135. As the front light, it is preferable to use an edge light type front light. It is preferable to use a front light provided with an LED because power consumption can be reduced.

Here, an example of producing a bottom emission type light emitting element as the light emitting element 170 has been shown, but one aspect of the present invention is not limited to this.

The light emitting element 170 may be any of a top emission type, a bottom emission type, and a dual emission type. A conductive film that transmits visible light is used for the electrode on the side that extracts light. Further, it is preferable to use a conductive film that reflects visible light for the electrode on the side that does not take out light.

The EL layer 192 has at least a light emitting layer. As a layer other than the light emitting layer, the EL layer 192 includes a substance having a high hole injecting property, a substance having a high hole transporting property, a hole blocking material, a substance having a high electron transporting property, a substance having a high electron injecting property, or a bipolar substance. It may further have a layer containing the substance (substance having high electron transport property and hole transport property) and the like. Further, the EL layer 192 may have an inorganic compound such as a quantum dot.

As a method of realizing color display, there are a method of combining a light emitting element 170 having a white light emitting color and a colored layer, and a method of providing a light emitting element 170 having a different light emitting color for each sub-pixel. The former method is more productive than the latter method. On the other hand, in the latter method, since it is necessary to make the EL layer 192 separately for each sub-pixel, the productivity is inferior to that of the former method. However, in the latter method, it is possible to obtain an luminescent color having a higher color purity than the former method. Further, the color purity can be increased by imparting a microcavity structure to the light emitting element 170.

<< Example 1 of manufacturing method of display device >>
Hereinafter, a method of manufacturing the display device 300A will be described with reference to FIGS. 3 to 11.

The thin films (insulating film, semiconductor film, conductive film, etc.) constituting the display device include a sputtering method, a chemical vapor deposition (CVD) method, a vacuum deposition method, and a pulse laser deposition (PLD). ) Method, atomic layer deposition (ALD) method, etc. can be used for formation. The CVD method may be a plasma chemical vapor deposition (PECVD) method or a thermal CVD method. As an example of the thermal CVD method, the metalorganic chemical vapor deposition (MOCVD) method may be used.

The thin films (insulating film, semiconductor film, conductive film, etc.) that make up the display device are spin coating, dip, spray coating, inkjet, dispense, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife. It can be formed by a method such as coating.

When processing the thin film constituting the display device, it can be processed by using a lithography method or the like. Alternatively, an island-shaped thin film may be formed by a film forming method using a shielding mask. Alternatively, the thin film may be processed by a nanoimprint method, a sandblast method, a lift-off method, or the like. Photolithography methods include a method of forming a resist mask on a thin film to be processed and processing the thin film by etching or the like to remove the resist mask, and a method of forming a photosensitive thin film and then exposing and developing the film. There is a method of processing the thin film into a desired shape.

When light is used in the lithography method, for example, i-line (wavelength 365 nm), g-line (wavelength 436 nm), h-line (wavelength 405 nm), or a mixture of these can be used as the light used for exposure. In addition, ultraviolet rays, KrF laser light, ArF laser light, or the like can also be used. Further, the exposure may be performed by the immersion exposure technique. Further, as the light used for exposure, extreme ultraviolet light (EUV: Extreme Ultra-violet) or X-ray may be used. Further, an electron beam can be used instead of the light used for exposure. It is preferable to use extreme ultraviolet light, X-rays or an electron beam because extremely fine processing is possible. When exposure is performed by scanning a beam such as an electron beam, a photomask is not required.

A dry etching method, a wet etching method, a sandblasting method, or the like can be used for etching the thin film.

[Step S1: Prepare the fabrication substrate 14]
First, the fabrication substrate 14 is prepared (FIGS. 3 and 4 (A)).

The manufacturing substrate 14 has rigidity to such an extent that it can be easily transported, and has heat resistance to the temperature required in the manufacturing process. Examples of the material that can be used for the manufacturing substrate 14 include glass, quartz, ceramic, sapphire, resin, semiconductor, metal, alloy, and the like. Examples of the glass include non-alkali glass, barium borosilicate glass, aluminoborosilicate glass and the like.

The thickness of the manufacturing substrate 14 is, for example, 0.5 mm or more and 1 mm or less, and specific examples thereof include 0.5 mm and 0.7 mm.

[Step S2: Forming the metal oxide layer 20]
Next, the metal oxide layer 20 is formed on the fabrication substrate 14 (FIGS. 3 and 4 (B1)). Alternatively, the metal layer 19 and the metal oxide layer 20 are laminated on the manufacturing substrate 14 (FIG. 4 (B2)).

Various metals, alloys, and the like can be used for the metal layer 19.

Oxides of various metals can be used for the metal oxide layer 20. Examples of the metal oxide include titanium oxide (TiO _x ), molybdenum oxide, aluminum oxide, tungsten oxide, indium tin oxide containing silicon (ITSO), indium zinc oxide, In-Ga-Zn oxide and the like. Be done.

Other metal oxides include indium oxide, indium oxide containing titanium, indium oxide containing tungsten, indium tin oxide (ITO), ITO containing titanium, indium zinc oxide containing tungsten, and zinc oxide (ZnO). ), ZnO containing gallium, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, tin oxide, bismuth oxide, titanate, tantalumate, niobic acid Examples include salt.

The method for forming the metal oxide layer 20 is not particularly limited. For example, it can be formed by using a sputtering method, a plasma CVD method, a vapor deposition method, a sol-gel method, an electrophoresis method, a spray method, or the like.

The metal oxide layer 20 can be formed by introducing oxygen into the metal layer after forming the metal layer. At this time, only the surface of the metal layer or the entire metal layer is oxidized. In the former case, by introducing oxygen into the metal layer, a laminated structure of the metal layer 19 and the metal oxide layer 20 is formed (FIG. 4 (B2)).

For example, the metal layer can be oxidized by heating the metal layer in an atmosphere containing oxygen. It is preferable to heat the metal layer while flowing a gas containing oxygen. The temperature for heating the metal layer is preferably 100 ° C. or higher and 500 ° C. or lower, more preferably 100 ° C. or higher and 450 ° C. or lower, more preferably 100 ° C. or higher and 400 ° C. or lower, and further preferably 100 ° C. or higher and 350 ° C. or lower.

The metal layer is preferably heated below the maximum temperature in the fabrication of the transistor. This makes it possible to prevent the maximum temperature in the production of the display device from becoming high. By setting the temperature below the maximum temperature in the manufacturing of the transistor, it is possible to divert the manufacturing equipment and the like in the manufacturing process of the transistor, so that additional capital investment and the like can be suppressed. Therefore, the display device can be a display device in which the production cost is suppressed. For example, when the manufacturing temperature of the transistor is up to 350 ° C., the heat treatment temperature is preferably 350 ° C. or lower.

Alternatively, the metal layer can be oxidized by radically treating the surface of the metal layer. In the radical treatment, it is preferable to expose the surface of the metal layer to an atmosphere containing at least one of oxygen radicals and hydroxyl radicals. For example, it is preferable to perform plasma treatment in an atmosphere containing one or both of the oxygen or water vapor (H 2 _O).

The metal oxide layer 20 and the resin layer are formed by containing hydrogen, oxygen, hydrogen radicals (H ^* ), oxygen radicals (O ^* ), hydroxyl radicals (OH ^{*), etc. on the surface or inside of the metal oxide layer 20.} The force required for separation from 23 can be reduced. From this, it is preferable to perform radical treatment or plasma treatment for the formation of the metal oxide layer 20.

When the metal layer is oxidized by radical treatment or plasma treatment on the surface of the metal layer, the step of heating the metal layer at a high temperature becomes unnecessary. Therefore, it is possible to prevent the maximum temperature in manufacturing the display device from becoming high.

Alternatively, the metal oxide layer 20 can be formed in an oxygen atmosphere. For example, the metal oxide layer 20 can be formed by forming a metal oxide film by using a sputtering method while flowing a gas containing oxygen. Also in this case, it is preferable to perform radical treatment on the surface of the metal oxide layer 20. In the radical treatment, it is preferable to expose the surface of the metal oxide layer 20 to an atmosphere containing at least one of oxygen radicals, hydrogen radicals, and hydroxyl radicals. For example, oxygen, is preferably subjected to plasma treatment in an atmosphere containing one or more of hydrogen or steam, (H 2 _O).

The radical treatment can be performed using a plasma generator or an ozone generator.

For example, oxygen plasma treatment, hydrogen plasma treatment, water plasma treatment, ozone treatment and the like can be performed. The oxygen plasma treatment can be performed by generating plasma in an atmosphere containing oxygen. The hydrogen plasma treatment can be performed by generating plasma in an atmosphere containing hydrogen. Water plasma treatment can be performed by generating a plasma in an atmosphere containing water vapor (H 2 _O). In particular, it is preferable to carry out water plasma treatment because a large amount of water can be contained in the surface or the inside of the metal oxide layer 20.

Plasma treatment may be performed in an atmosphere containing two or more of oxygen, hydrogen, water (water vapor), and an inert gas (typically argon). The plasma treatment includes, for example, plasma treatment in an atmosphere containing oxygen and hydrogen, plasma treatment in an atmosphere containing oxygen and water, plasma treatment in an atmosphere containing water and argon, and oxygen and argon. Examples include plasma treatment in an atmosphere containing and, or plasma treatment in an atmosphere containing oxygen, water, and argon. By using argon gas as one of the gases for plasma treatment, it is possible to perform plasma treatment while damaging the metal layer or the metal oxide layer 20, which is preferable.

Two or more kinds of plasma treatments may be continuously performed without exposure to the atmosphere. For example, water plasma treatment may be performed after argon plasma treatment.

In addition, as a method for introducing oxygen, hydrogen, water, etc., an ion implantation method, an ion doping method, a plasma imaging ion implantation method, or the like can be used.

The thickness of the metal layer 19 is preferably 1 nm or more and 100 nm or less, more preferably 1 nm or more and 50 nm or less, and more preferably 1 nm or more and 20 nm or less.

The thickness of the metal oxide layer 20 is, for example, preferably 1 nm or more and 200 nm or less, more preferably 5 nm or more and 100 nm or less, and more preferably 5 nm or more and 50 nm or less. When the metal oxide layer 20 is formed by using the metal layer, the thickness of the finally formed metal oxide layer 20 may be thicker than the thickness of the formed metal layer.

By supplying a liquid containing water to the interface between the metal oxide layer 20 and the resin layer 23 before or during the separation, the force required for the separation can be reduced.

The metal oxide layer 20 preferably has a low surface tension and high wettability with respect to a liquid containing water. A liquid containing water can be spread over the entire surface of the metal oxide layer 20, and the liquid containing water can be easily supplied to the separation interface. By spreading water over the entire metal oxide layer 20, uniform peeling can be achieved.

The smaller the contact angle between the metal oxide layer 20 and the liquid, the more effective the liquid supply can be. Specifically, the contact angle of the metal oxide layer 20 with the water-containing liquid is preferably greater than 0 ° and 60 ° or less, and more preferably greater than 0 ° and 50 ° or less. When the wettability to a liquid containing water is extremely high (for example, when the contact angle is about 20 ° or less), it may be difficult to obtain an accurate value of the contact angle. Since the metal oxide layer 20 is more suitable as it has a higher wettability with respect to a liquid containing water, the wettability with respect to a liquid containing water may be so high that an accurate value of the contact angle cannot be obtained.

Titanium oxide, tungsten oxide and the like are suitable for the metal oxide layer 20. The use of titanium oxide is preferable because it can reduce the cost as compared with tungsten oxide.

[Step S3: Forming the resin layer 23]
Next, the first layer 24 is formed on the metal oxide layer 20 (FIG. 4 (C)). Then, the first layer 24 is heat-treated to form the resin layer 23 (FIGS. 3 and 4 (D)).

The first layer 24 can be formed using various resin materials (including resin precursors).

The first layer 24 is preferably formed using a thermosetting material.

The first layer 24 may be formed by using a material having photosensitivity, or may be formed by using a material having no photosensitivity (also referred to as a non-photosensitive material).

When a photosensitive material is used, a part of the first layer 24 can be removed by a photolithography method to form a resin layer 23 having a desired shape. Specifically, after the first layer 24 is formed into a film, heat treatment (pre-baking treatment) for removing the solvent is performed, and then exposure is performed using a photomask. Subsequently, an unnecessary portion can be removed by performing a developing process.

Further, a resin layer 23 having a desired shape can be formed by forming a mask such as a resist mask or a hard mask on the first layer 24 or the resin layer 23 and etching the mask. This method is particularly suitable when a non-photosensitive material is used.

For example, an inorganic film is formed on the resin layer 23, and a resist mask is formed on the inorganic film. After etching the inorganic film with a resist mask, the resin layer 23 can be etched with the inorganic film as a hard mask.

Examples of the inorganic film that can be used as a hard mask include various inorganic insulating films, metal films and alloy films that can be used for the conductive layer.

It is preferable that the mask is formed to have an extremely thin thickness and the mask can be removed at the same time as etching because the step of removing the mask can be reduced.

The first layer 24 is preferably formed using a material containing a polyimide resin or a polyimide resin precursor. The first layer 24 can be formed by using, for example, a material containing a polyimide resin and a solvent, a material containing a polyamic acid and a solvent, or the like. Since polyimide is a material preferably used for a flattening film or the like of a display device, the film forming device and the material can be shared. Therefore, no new device or material is required to realize the configuration of one aspect of the present invention.

Specifically, the resin layer 23 preferably has a residue of the compound (oxydiphthalic acid) represented by the structural formula (100).

For the resin layer 23, a polyimide resin obtained by using an acid component containing oxydiphthalic acid or an oxydiphthalic acid derivative and an amine component containing an aromatic amine or an aromatic amine derivative is suitable. Examples of the oxydiphthalic acid derivative include oxydiphthalic anhydride.

In addition, as the resin material that can be used for forming the first layer 24, for example, acrylic resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and these resins. Examples include precursors.

The first layer 24 is preferably formed using a spin coater. By using the spin coating method, a thin film can be uniformly formed on a large-format substrate.

The first layer 24 is preferably formed using a solution having a viscosity of 5 cP or more and less than 500 cP, preferably 5 cP or more and less than 100 cP, and more preferably 10 cP or more and 50 cP or less. The lower the viscosity of the solution, the easier it is to apply. Further, the lower the viscosity of the solution, the more air bubbles can be suppressed and a good quality film can be formed.

In addition, as a method for forming the first layer 24, dip, spray coating, inkjet, dispense, screen printing, offset printing, doctor knife, slit coating, roll coating, curtain coating, knife coating and the like can be mentioned.

The heat treatment can be performed, for example, by flowing a gas containing one or more of oxygen, nitrogen, and a rare gas (argon, etc.) inside the chamber of the heating device. Alternatively, the heat treatment can be performed in an air atmosphere using a chamber of a heating device, a hot plate, or the like.

When heating is performed in an air atmosphere or while flowing a gas containing oxygen, the resin layer 23 may be colored by oxidation and the transparency to visible light may decrease.

Therefore, it is preferable to heat while flowing nitrogen gas. As a result, the transparency of the resin layer 23 to visible light can be increased.

By heat treatment, the degassing component (for example, hydrogen, water, etc.) in the resin layer 23 can be reduced. In particular, it is preferable to heat at a temperature equal to or higher than the production temperature of each layer formed on the resin layer 23. As a result, degassing from the resin layer 23 in the transistor manufacturing process can be significantly suppressed.

For example, when the fabrication temperature of the transistor is up to 350 ° C., the film to be the resin layer 23 is preferably heated at 350 ° C. or higher and 450 ° C. or lower, more preferably 400 ° C. or lower, and even more preferably 375 ° C. or lower. As a result, degassing from the resin layer 23 in the transistor manufacturing process can be significantly suppressed.

The temperature of the heat treatment is preferably equal to or lower than the maximum temperature in the fabrication of the transistor. By setting the temperature below the maximum temperature in the manufacturing of the transistor, it is possible to divert the manufacturing equipment and the like in the manufacturing process of the transistor, so that additional capital investment and the like can be suppressed. Therefore, the display device can be a display device in which the production cost is suppressed. For example, when the manufacturing temperature of the transistor is up to 350 ° C., the heat treatment temperature is preferably 350 ° C. or lower.

By making the maximum temperature in the fabrication of the transistor equal to the temperature in the heat treatment, it is possible to prevent the maximum temperature in the fabrication of the display device from becoming high by performing the heat treatment, and it is possible to reduce the degassing component of the resin layer 23. preferable.

By lengthening the treatment time, even when the heating temperature is relatively low, it may be possible to achieve the same peelability as when the heating temperature is higher. Therefore, when the heating temperature cannot be raised due to the configuration of the heating device, it is preferable to lengthen the treatment time.

The heat treatment time is, for example, preferably 5 minutes or more and 24 hours or less, more preferably 30 minutes or more and 12 hours or less, and further preferably 1 hour or more and 6 hours or less. The heat treatment time is not limited to this. For example, when the heat treatment is performed by using the RTA (Rapid Thermal Annealing) method, it may be less than 5 minutes.

As the heating device, various devices such as an electric furnace and a device for heating an object to be processed by heat conduction or heat radiation from a heating element such as a resistance heating element can be used. For example, an RTA device such as a GRTA (Gas Rapid Thermal Anneal) device or an LRTA (Lamp Rapid Thermal Anneal) device can be used. The LRTA device is a device that heats an object to be processed by radiation of light (electromagnetic waves) emitted from lamps such as halogen lamps, metal halide lamps, xenon arc lamps, carbon arc lamps, high-pressure sodium lamps, and high-pressure mercury lamps. The GRTA device is a device that performs heat treatment using a high-temperature gas. By using the RTA device, the processing time can be shortened, which is preferable for mass production. Further, the heat treatment may be performed using an in-line type heating device.

The thickness of the resin layer 23 may change from the thickness of the first layer 24 due to the heat treatment. For example, when the solvent contained in the first layer 24 is removed, or when the curing progresses and the density increases, the volume decreases and the resin layer 23 becomes thinner than the first layer 24. There is.

Before the heat treatment, a heat treatment (also referred to as a prebaking treatment) for removing the solvent contained in the first layer 24 may be performed. The temperature of the prebaking treatment can be appropriately determined depending on the material used. For example, it can be carried out at 50 ° C. or higher and 180 ° C. or lower, 80 ° C. or higher and 150 ° C. or lower, or 90 ° C. or higher and 120 ° C. or lower. Alternatively, the heat treatment may also serve as a prebake treatment, and the solvent contained in the first layer 24 may be removed by the heat treatment.

The resin layer 23 has flexibility. The production substrate 14 is less flexible than the resin layer 23.

The thickness of the resin layer 23 is preferably 0.01 μm or more and less than 10 μm, more preferably 0.1 μm or more and 5 μm or less, and further preferably 0.5 μm or more and 3 μm or less. By forming the resin layer thinly, a display device can be manufactured at low cost. In addition, the weight and thickness of the display device can be reduced. In addition, the flexibility of the display device can be increased. By using a low-viscosity solution, it becomes easy to form the resin layer 23 thinly. However, the thickness of the resin layer 23 is not limited to this, and may be 10 μm or more. For example, the thickness of the resin layer 23 may be 10 μm or more and 200 μm or less. By setting the thickness of the resin layer 23 to 10 μm or more, the rigidity of the display device can be increased, which is preferable.

The coefficient of thermal expansion of the resin layer 23 is preferably 0.1 ppm / ° C. or higher and 50 ppm / ° C. or lower, more preferably 0.1 ppm / ° C. or higher and 20 ppm / ° C. or lower, and 0.1 ppm / ° C. or higher and 10 ppm / ° C. It is more preferably ° C. or lower. The lower the coefficient of thermal expansion of the resin layer 23, the more it is possible to prevent cracks in the layers constituting the transistors and the like and damage to the transistors and the like due to heating.

[Step S4: Forming a transistor]
Next, a layer to be peeled off including a transistor is formed on the resin layer 23.

As the layer to be peeled off, for example, an insulating layer and a functional element (transistor, display element, etc.) can be provided.

The peelable layer is formed at a temperature equal to or lower than the heat resistant temperature of the resin layer 23. It is preferably formed at a temperature lower than the temperature of the above heat treatment.

It is preferable to form the insulating layer 31 on the resin layer 23 (FIG. 4 (E)).

The insulating layer 31 can be used as a barrier layer for preventing impurities contained in the resin layer 23 from diffusing into a transistor or a display element to be formed later. For example, it is preferable that the insulating layer 31 prevents the moisture and the like contained in the resin layer 23 from diffusing into the transistor and the display element when the resin layer 23 is heated. Therefore, the insulating layer 31 preferably has a high barrier property.

As the insulating layer 31, an oxide insulating film, a nitride insulating film, an oxide nitride insulating film, a nitride oxide insulating film, or the like can be used. The insulating layer 31 can be formed of a single layer or a laminate. Examples of the oxide insulating film include a silicon oxide film, an aluminum oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film. .. Examples of the nitride insulating film include a silicon nitride film and aluminum nitride. Examples of the oxide nitride insulating film include a silicon oxide nitride film. Examples of the nitriding insulating film include a silicon nitriding oxide film. In particular, it is preferable to form a silicon nitride film on the resin layer 23 and a silicon oxide film on the silicon nitride film.

In the present specification and the like, the term "silicon oxide nitride" refers to a composition having a higher oxygen content than nitrogen. Further, in the present specification and the like, "silicon nitride oxide" refers to a composition having a higher nitrogen content than oxygen.

The higher the film formation temperature, the denser the inorganic insulating film and the higher the barrier property, so it is preferable to form the inorganic insulating film at a high temperature. The substrate temperature at the time of film formation of the insulating layer 31 is preferably room temperature (25 ° C.) or higher and 350 ° C. or lower, and more preferably 100 ° C. or higher and 300 ° C. or lower.

The functional element may be formed directly on the resin layer 23 without providing the insulating layer 31.

Next, the electrode 311a, the electrode 311c, and the electrode 311e are formed on the insulating layer 31 (FIG. 5 (A)). Then, the electrode 311b is formed on the electrode 311a, the electrode 311d is formed on the electrode 311c, and the electrode 311f is formed on the electrode 311e. The electrode 311b has an opening 451 on the electrode 311a. The electrode 311a is formed by using a conductive material that transmits visible light. The electrode 311b is formed by using a conductive material that reflects visible light.

The electrodes and the conductive layer of the display device can be formed by forming a conductive film, forming a resist mask, etching the conductive film, and then removing the resist mask.

The electrodes and conductive layers of the display device are made of a single layer of a metal such as aluminum, titanium, chromium, nickel, copper, yttrium, zirconium, molybdenum, silver, tantalum, or tungsten, or an alloy containing this as the main component, respectively. It can be used as a structure or a laminated structure. Alternatively, indium oxide, indium tin oxide (ITO), indium oxide containing tungsten, indium zinc oxide containing tungsten, indium oxide containing titanium, ITO containing titanium, indium zinc oxide, zinc oxide (ZnO). , ZnO containing gallium, ITO containing silicon, and other conductive materials having translucency may be used. Further, a semiconductor such as polycrystalline silicon or an oxide semiconductor, which has been reduced in resistance by containing an impurity element or the like, or a silicide such as nickel silicide may be used. A membrane containing graphene can also be used. The graphene-containing film can be formed by reducing, for example, a film-like graphene oxide-containing film. Further, a semiconductor such as an oxide semiconductor containing an impurity element may be used. Alternatively, it may be formed by using a conductive paste such as silver, carbon or copper, or a conductive polymer such as polythiophene. Conductive pastes are inexpensive and preferred. Conductive polymers are preferred because they are easy to apply.

Next, the insulating layer 220 is formed (FIG. 5 (A)). Then, the insulating layer 220 is provided with an opening reaching the electrode 311b and an opening reaching the electrode 311d.

As the insulating layer 220, an inorganic insulating film that can be used for the insulating layer 31 can be used. Further, a resin such as acrylic or epoxy may be used.

Next, the transistor 201, the transistor 203, the transistor 205, and the transistor 206 are formed on the insulating layer 220 (FIGS. 3 and 5 (A)). Further, a connecting portion 204 and a connecting portion 207 are also formed on the insulating layer 220 (FIG. 5 (A)).

The structure of the transistor included in the display device is not particularly limited. For example, it may be a planar type transistor, a stagger type transistor, or an inverted stagger type transistor. Further, a transistor structure having either a top gate structure or a bottom gate structure may be used. Alternatively, gate electrodes may be provided above and below the channel.

The semiconductor material used for the transistor is not particularly limited, and for example, a Group 14 element, compound semiconductor, or oxide semiconductor can be used for the semiconductor layer. Typically, a semiconductor containing silicon, a semiconductor containing gallium arsenide, an oxide semiconductor containing indium, or the like can be applied.

Here, a case where a transistor having a bottom gate structure having a metal oxide layer as the semiconductor layer 231 is manufactured is shown. The metal oxide can function as an oxide semiconductor.

In the present embodiment, an oxide semiconductor is used as the semiconductor of the transistor. It is preferable to use a semiconductor material having a wider bandgap and a smaller carrier density than silicon because the current in the off state of the transistor can be reduced.

In the transistor 203 and the transistor 206, a part of the conductive layer 221a functions as a gate, a part of the insulating layer 211 functions as a gate insulating layer, and a part of the conductive layer 222a functions as one of a source or a drain. A portion of the conductive layer 222b functions as either a source or a drain. The transistor 201 and the transistor 205 have a configuration in which a conductive layer 223 and an insulating layer 212 are added to the configurations of the transistor 203 and the transistor 206, and have two gates. In the transistor 201 and the transistor 205, a part of the conductive layer 221a and a part of the conductive layer 223 function as a gate, and a part of the insulating layer 211 and a part of the insulating layer 212 function as a gate insulating layer.

A method for manufacturing each transistor and each connection portion will be specifically described.

First, the conductive layer 221a, the conductive layer 221b, and the conductive layer 221c are formed on the insulating layer 220. Here, the conductive layer 221b and the electrode 311b are connected to each other through the opening of the insulating layer 220, and the conductive layer 221c and the electrode 311d are connected to each other.

Subsequently, the insulating layer 211 is formed. As the insulating layer 211, an inorganic insulating film that can be used for the insulating layer 31 can be used.

Subsequently, the semiconductor layer 231 is formed. In the present embodiment, a metal oxide layer is formed as the semiconductor layer 231. The metal oxide layer can be formed by forming a metal oxide film, forming a resist mask, etching the metal oxide film, and then removing the resist mask.

The substrate temperature at the time of forming the metal oxide film is preferably 350 ° C. or lower, more preferably room temperature or higher and 200 ° C. or lower, and further preferably room temperature or higher and 130 ° C. or lower.

The metal oxide film can be formed by using either one or both of the inert gas and the oxygen gas. The oxygen flow rate ratio (oxygen partial pressure) at the time of forming the metal oxide film is not particularly limited. However, in the case of obtaining a transistor having high field effect mobility, the oxygen flow rate ratio (oxygen partial pressure) at the time of film formation of the metal oxide film is preferably 0% or more and 30% or less, and 5% or more and 30% or less. Is more preferable, and 7% or more and 15% or less is further preferable.

The metal oxide film preferably contains at least indium or zinc. In particular, it preferably contains indium and zinc.

The metal oxide preferably has an energy gap of 2 eV or more, and more preferably 2.5 eV or more. It is more preferably 3 eV or more. As described above, by using the metal oxide having a wide energy gap, the off-current of the transistor can be reduced.

The metal oxide film can be formed by a sputtering method. In addition, the PLD method, PECVD method, thermal CVD method, ALD method, vacuum deposition method and the like may be used.

Subsequently, the conductive layer 222a, the conductive layer 222b, and the wiring 365 are formed. The conductive layer 222a and the conductive layer 222b are each connected to the semiconductor layer 231. Here, the conductive layer 222a included in the transistor 206 is electrically connected to the conductive layer 221b. As a result, in the connecting portion 207, the electrode 311b and the conductive layer 222a can be electrically connected. Further, the wiring 365 is electrically connected to the conductive layer 221c. As a result, in the connection portion 204, the wiring 365 and the electrode 311d can be electrically connected.

When processing the conductive layer 222a and the conductive layer 222b, a part of the semiconductor layer 231 not covered with the resist mask may be thinned by etching.

As described above, the transistor 203, the transistor 206, the connection portion 204, and the connection portion 207 can be manufactured.

Next, the insulating layer 212 that covers the transistor 206 and the like is formed, and the conductive layer 223 is formed on the insulating layer 212.

The insulating layer 212 can be formed by the same method as that of the insulating layer 211.

As described above, the transistor 201 and the transistor 205 can be manufactured.

Next, the insulating layer 213 is formed. The insulating layer 213 can be formed by the same method as that of the insulating layer 211.

Further, as the insulating layer 212, it is preferable to use an oxide insulating film such as a silicon oxide film or a silicon nitride film formed in an atmosphere containing oxygen. Further, it is preferable to laminate an insulating film such as a silicon nitride film, which is difficult to diffuse and permeate oxygen, as an insulating layer 213 on the silicon oxide film or the silicon nitride film. The oxide insulating film formed in an atmosphere containing oxygen can be an insulating film that easily releases a large amount of oxygen by heating. Oxygen can be supplied to the metal oxide layer by performing heat treatment in a state where such an oxide insulating film that releases oxygen and an insulating film that diffuses and does not easily permeate oxygen are laminated. As a result, oxygen deficiency in the metal oxide layer and defects at the interface between the metal oxide layer and the insulating layer 212 can be repaired, and the defect level can be reduced. If the insulating layer 213 does not easily diffuse and permeate oxygen, the released oxygen does not easily enter the light emitting element 170, and the reliability of the light emitting element 170 can be improved. As a result, an extremely reliable display device can be realized.

Next, the colored layer 134 is formed on the insulating layer 213, and then the insulating layer 214 is formed (FIG. 5 (B)). The colored layer 134 is arranged so as to overlap the opening 451 of the electrode 311b.

By forming the colored layer 134 using a photosensitive material, it can be processed into an island shape by a photolithography method or the like. When the colored layer 134 is unnecessary, such as when the EL layer 192 to be formed later is formed separately for each sub-pixel, the colored layer 134 may not be provided.

Since the insulating layer 214 is a layer having a surface to be formed of the display element to be formed later, it is preferable that the insulating layer 214 functions as a flattening layer. As the insulating layer 214, a resin or an inorganic insulating film that can be used for the insulating layer 220 can be used.

Next, openings are formed in the insulating layer 212, the insulating layer 213, and the insulating layer 214 to reach the conductive layer 222a of the transistor 205.

[Step S5: Forming the light emitting element 170]
Next, the light emitting element 170 is formed (FIGS. 3 and 5 (B)). The light emitting element 170 has a configuration in which an electrode 191 partially functioning as a pixel electrode, an EL layer 192, and an electrode 193 partially functioning as a common electrode are laminated.

First, the electrode 191 is formed. Here, the conductive layer 222a of the transistor 205 and the electrode 191 are connected to each other. The electrode 191 is formed by using a conductive material that transmits visible light.

Next, an insulating layer 216 covering the end of the electrode 191 is formed. As the insulating layer 216, a resin or an inorganic insulating film that can be used for the insulating layer 220 can be used. The insulating layer 216 has an opening at a portion overlapping the electrode 191.

Next, the EL layer 192 and the electrode 193 are formed (FIG. 5 (B)). The electrode 193 is formed by using a conductive material that reflects visible light.

The EL layer 192 can be formed by a method such as a thin film deposition method, a coating method, a printing method, or a ejection method. When the EL layer 192 is formed separately for each pixel, it can be formed by a vapor deposition method using a shadow mask such as a metal mask, an inkjet method, or the like. When the EL layer 192 is not formed separately for each pixel, a thin-film deposition method that does not use a metal mask can be used.

Either a low molecular weight compound or a high molecular weight compound can be used for the EL layer 192, and an inorganic compound may be contained.

Each step performed after the formation of the EL layer 192 is performed so that the temperature applied to the EL layer 192 is equal to or lower than the heat resistant temperature of the EL layer 192. The electrode 193 can be formed by using a vapor deposition method, a sputtering method, or the like.

As described above, the light emitting element 170 can be formed (FIGS. 3 and 5 (B)). The light emitting element 170 is manufactured so that the light emitting region overlaps the colored layer 134 and the opening 451 of the electrode 311b.

Next, the electrode 193 is covered to form the insulating layer 194 (FIG. 5 (B)). The insulating layer 194 functions as a protective layer that suppresses the diffusion of impurities such as water into the light emitting element 170. The light emitting element 170 is sealed by the insulating layer 194. After forming the electrode 193, it is preferable to form the insulating layer 194 without exposing it to the atmosphere.

As the insulating layer 194, an inorganic insulating film that can be used for the insulating layer 31 can be applied.

The substrate temperature at the time of film formation of the insulating layer 194 is preferably a temperature equal to or lower than the heat resistant temperature of the EL layer 192. The insulating layer 194 can be formed by using an ALD method, a sputtering method, or the like. The ALD method and the sputtering method are preferable because low-temperature film formation is possible. It is preferable to use the ALD method because the coverage of the insulating layer 194 is good.

[Step S6: Seal the light emitting element 170]
Next, the light emitting element 170 is sealed (FIGS. 3 and 6). Specifically, the substrate 351 is attached to the surface of the insulating layer 194 using the adhesive layer 142.

For the adhesive layer 142, various curable adhesives such as a photocurable adhesive such as an ultraviolet curable type, a reaction curable type adhesive, a thermosetting type adhesive, and an anaerobic type adhesive can be used. Moreover, you may use an adhesive sheet or the like.

The substrate 351 includes, for example, a polyester resin such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), a polyacrylonitrile resin, an acrylic resin, a polyimide resin, a polymethylmethacrylate resin, a polycarbonate (PC) resin, or a polyether sulfone (PES). ) Resin, polyamide resin (nylon, aramid, etc.), polysiloxane resin, cycloolefin resin, polystyrene resin, polyamideimide resin, polyurethane resin, polyvinyl chloride resin, polyvinylidene chloride resin, polypropylene resin, polytetrafluoroethylene (PTFE) Resins, ABS resins, cellulose nanofibers and the like can be used. Various materials such as glass, quartz, resin, metal, alloy, and semiconductor may be used for the substrate 351. Various materials such as glass, quartz, resin, metal, alloy, and semiconductor having a thickness sufficient to have flexibility may be used for the substrate 351.

[Step S7: Irradiate / separate light]
Next, the metal oxide layer 20 and the resin layer 23 are separated (FIGS. 3, 7, and 8). Thereby, the transistor, the light emitting element 170, etc. manufactured on the manufactured substrate 14 can be transposed to the substrate 351.

FIG. 7 shows an example of irradiating the laser beam 55. The laser beam 55 is, for example, a linear laser beam scanned from the left side to the right side in FIG. 7, whose long axis is perpendicular to its scanning direction and its incident direction (from top to bottom). In the laser apparatus, the laminate is arranged so that the fabrication substrate 14 is on the upper side. The laminated body is irradiated with the laser beam 55 from the upper side of the laminated body (manufactured substrate 14).

The laser beam 55 is preferably irradiated to or near the interface between the metal oxide layer 20 and the resin layer 23 via the fabrication substrate 14. Further, the laser beam 55 may be irradiated into the metal oxide layer 20 or the resin layer 23.

The metal oxide layer 20 absorbs the laser beam 55. The resin layer 23 may absorb the laser beam 55.

The absorption rate of the laser beam 55 in the laminated structure of the production substrate 14 and the metal oxide layer 20 is preferably 50% or more and 100% or less, more preferably 75% or more and 100% or less, and further preferably 80% or more and 100% or less. By absorbing most of the laser beam 55, the laminated structure can be reliably peeled off at the interface between the metal oxide layer 20 and the resin layer 23. Further, the damage that the resin layer 23 receives from light can be reduced.

Irradiation with the laser beam 55 lowers the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23. The resin layer 23 may be weakened by the irradiation of the laser beam 55.

As the laser beam 55, light having a wavelength at which at least a part thereof passes through the fabrication substrate 14 and is absorbed by the metal oxide layer 20 is selected and used. The laser beam 55 is preferably light in the wavelength range from visible light to ultraviolet light. For example, light having a wavelength of 180 nm or more and 450 nm or less, preferably light having a wavelength of 200 nm or more and 400 nm or less, and more preferably light having a wavelength of 250 nm or more and 350 nm or less can be used.

The laser beam 55 preferably has an energy higher than the energy gap of the metal oxide layer 20. For example, the energy gap of titanium oxide is about 3.2 eV. Therefore, when titanium oxide is used for the metal oxide layer 20, the light preferably has an energy higher than 3.2 eV.

In particular, it is preferable to use an excimer laser having a wavelength of 308 nm because it is excellent in productivity. Since the excimer laser is also used for laser crystallization in LTPS, the equipment of the existing LTPS production line can be diverted, and new capital investment is not required, which is preferable. The energy of light with a wavelength of 308 nm is about 4.0 eV. That is, when titanium oxide is used for the metal oxide layer 20, an excimer laser having a wavelength of 308 nm is suitable. Further, a solid-state UV laser (also referred to as a semiconductor UV laser) such as a UV laser having a wavelength of 355 nm, which is the third harmonic of the Nd: YAG laser, may be used. Since the solid-state laser does not use gas, the running cost can be reduced as compared with the excimer laser, which is preferable. Further, a pulse laser such as a picosecond laser may be used.

When a linear laser beam is used as the laser beam 55, the laser beam 55 is scanned by relatively moving the fabrication substrate 14 and the light source, and the laser beam 55 is irradiated over a region to be separated.

FIG. 8 shows an example in which separation occurs at the interface between the metal oxide layer 20 and the resin layer 23. By reducing the adhesion or adhesiveness between the metal oxide layer 20 and the resin layer 23, separation occurs at the interface between the metal oxide layer 20 and the resin layer 23. In addition, separation may occur in the fragile resin layer 23.

Here, at the time of separation, a liquid containing water such as water or an aqueous solution is added to the separation interface, and the separation is performed so that the liquid permeates the separation interface, whereby the separation can be easily performed. Further, it is possible to suppress that the static electricity generated at the time of separation adversely affects the functional element such as a transistor (such as the semiconductor element being destroyed by the static electricity).

Examples of the liquid to be supplied include water (preferably pure water), a neutral, alkaline or acidic aqueous solution, and an aqueous solution in which a salt is dissolved. Further, ethanol, acetone and the like can be mentioned. Moreover, various organic solvents may be used.

When a liquid is supplied to the separation interface, the surface of the layer to be peeled exposed by separation may be dried.

Before the separation, a part of the resin layer 23 may be separated from the manufacturing substrate 14 to form a starting point of separation. For example, a starting point of separation may be formed by inserting a sharply shaped instrument such as a cutting tool between the manufacturing substrate 14 and the resin layer 23. Alternatively, the resin layer 23 may be cut from the substrate 351 side with a sharply shaped instrument to form a starting point for separation. Alternatively, the starting point of separation may be formed by a method using a laser such as a laser ablation method.

[Step S8-1: Determine whether to remove the resin layer 23]
When removing the resin layer 23 after the separation, the process proceeds to step S8-2. If the resin layer 23 is not removed, the process proceeds to step 9.

In the present production method Example 1, the case where the resin layer 23 is removed will be described. It is preferable to remove the resin layer 23 when it is necessary to expose one or more of the electrodes 311a, 311c, and 311e. When the resin layer 23 is not removed, the number of steps can be reduced, which is preferable.

[Step S8-2: Remove the resin layer 23]
Next, the resin layer 23 is removed (FIGS. 3 and 9 (A)). Further, the insulating layer 31 may be removed (FIG. 9 (A)).

By removing the resin layer 23 and the insulating layer 31, the display device can be made thinner and lighter.

If the resin layer 23 and the insulating layer 31 are thickly provided, most of the light incident on the display device is absorbed by the resin layer 23. Therefore, the reflectance of the pixels is lowered and the display becomes dark. When the driving voltage of the liquid crystal element is constant, the thicker the resin layer 23 and the insulating layer 31, the weaker the electric field applied to the liquid crystal layer, and the lower the contrast of the display. In order to increase the contrast of the display without changing the thickness of the resin layer 23 and the insulating layer 31, it is necessary to increase the driving voltage of the liquid crystal element. Therefore, it is preferable to remove the resin layer 23 and the insulating layer 31.

It may not be necessary to completely remove the resin layer 23 and the insulating layer 31 when the thickness of the resin layer 23 and the insulating layer 31 is sufficiently thin.

Further, when the barrier property of the insulating layer 31 is high, by leaving the insulating layer 31 remaining, it is possible to suppress impurities from entering the transistor and the light emitting element 170, and it is possible to improve the reliability of the display device. The thickness of the insulating layer 31 is preferably 50 nm or more and 300 nm or less, and more preferably 100 nm or more and 200 nm or less.

For example, as shown in FIG. 9B, a part of the insulating layer 31 may be removed so that the electrodes 311c and 311e are exposed.

Further, before bonding to the substrate 361, the alignment film 133a is formed on the substrate 351 by superimposing the electrode 311b functioning as a pixel electrode of the liquid crystal element 180 on the substrate 351. The alignment film 133a is a layer that later comes into contact with the liquid crystal layer. The alignment film 133a can be formed by forming a thin film such as a resin and then performing a rubbing treatment.

[Step S9: Forming the liquid crystal element 180]
Next, the liquid crystal element 180 is formed (FIG. 3). The liquid crystal element 180 is formed by bonding the substrate 351 and the substrate 361 in a state where the liquid crystal layer is arranged between the common electrode and the pixel electrode.

An electrode 113 or the like that functions as a common electrode of the liquid crystal element 180 is formed on the substrate 361 before being bonded to the substrate 351.

The step of forming the electrode 113 and the like on the substrate 361 will be described with reference to FIG.

First, the colored layer 131 and the light-shielding layer 132 are formed on the substrate 361. By forming the colored layer 131 on the display unit 362 using a photosensitive material, the colored layer 131 can be processed into an island shape by a photolithography method or the like. The light-shielding layer 132 can be formed by using metal, resin, or the like. After forming an insulating layer having a high barrier property on the substrate 361, a colored layer 131 and a light-shielding layer 132 may be formed on the insulating layer.

The substrate 361 is a substrate located on the display surface side. Therefore, a material that transmits visible light is used for the substrate 361. For example, among the materials that can be used for the manufacturing substrate 14 or the substrate 351 described above, a material that transmits visible light can be applied.

Next, the insulating layer 121 is formed on the colored layer 131 and the light-shielding layer 132.

The insulating layer 121 preferably functions as a flattening layer. A resin such as acrylic or epoxy can be preferably used for the insulating layer 121.

An inorganic insulating film may be applied to the insulating layer 121. As the insulating layer 121, for example, an inorganic insulating film such as a silicon nitride film, a silicon nitride film, a silicon oxide film, a silicon nitride film, an aluminum oxide film, or an aluminum nitride film can be used. Further, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film and the like may be used. Further, two or more of the above-mentioned insulating films may be laminated and used.

Next, the electrode 113 is formed. The electrode 113 is formed by using a conductive material that transmits visible light.

Next, the insulating layer 117 is formed on the electrode 113. It is preferable to use an organic insulating film for the insulating layer 117.

Next, the alignment film 133b is formed on the electrode 113 and the insulating layer 117. The alignment film 133b can be formed by forming a thin film such as a resin and then performing a rubbing treatment.

The substrate 361 and the substrate 351 that have completed the above steps are bonded together using the adhesive layer 141 (FIG. 11). The substrate 361 and the substrate 351 are bonded together with the liquid crystal layer 112 sandwiched between the alignment film 133a and the alignment film 133b. As the adhesive layer 141, a material that can be used for the adhesive layer 142 can be used.

The liquid crystal element 180 shown in FIG. 11 has a configuration in which an electrode 311a and an electrode 311b, which partially function as pixel electrodes, a liquid crystal layer 112, and an electrode 113, which partially functions as a common electrode, are laminated. The liquid crystal element 180 is manufactured so as to overlap the colored layer 131.

In the connecting portion 252, the electrode 113 and the electrode 311e are electrically connected via the connecting body 243.

As the connecting body 243, for example, conductive particles can be used. As the conductive particles, those in which the surface of the particles such as organic resin or silica is coated with a metal material can be used. It is preferable to use nickel or gold as the metal material because the contact resistance can be reduced. Further, it is preferable to use particles in which two or more kinds of metal materials are coated in layers, such as nickel being further coated with gold. Further, it is preferable to use a material that is elastically deformed or plastically deformed as the connecting body 243. At this time, the connecting body 243, which is a conductive particle, may have a shape that is crushed in the vertical direction as shown in FIG. 11 and the like. By doing so, the contact area between the connecting body 243 and the conductive layer electrically connected to the connecting body 243 can be increased, the contact resistance can be reduced, and the occurrence of defects such as poor connection can be suppressed.

The connecting body 243 is preferably arranged so as to be covered with the adhesive layer 141. For example, the connecting body 243 may be dispersed in the adhesive layer 141 before curing.

[Step S10: Implement]
After that, the FPC 372, the IC, and the like can be electrically connected. Further, the polarizing plate 135 or the like can be arranged on the display surface of the substrate 361.

From the above, the display device 300A shown in FIG. 2 can be manufactured.

<< Display device configuration example 2 >>
Hereinafter, a display device having a configuration different from that of the display device 300A will be described with reference to FIGS. 12 to 14. A detailed description of the same portion as that of the display device 300A will be omitted.

FIG. 12 shows a cross-sectional view of the display device 300B. The display device 300B does not have the substrate 361 and the polarizing plate 135, but has an insulating layer 91, an adhesive layer 392, a substrate 390, and an antireflection member 396. Other configurations are the same as those of the display device 300A. The display device 300B is a configuration example in which a liquid crystal material operating in the guest / host liquid crystal mode is used for the liquid crystal element 180.

FIG. 13 shows a cross-sectional view of the display device 300C. The display device 300C does not have a substrate 361, but has an insulating layer 91, an adhesive layer 392, a light diffusion layer 136, a substrate 390, and an antireflection member 396. Further, in the display device 300C, the position of the polarizing plate 135 is different from that of the display device 300A. Other configurations are the same as those of the display device 300A. The display device 300C is a configuration example in which a liquid crystal material operating in the TN mode is used for the liquid crystal element 180.

It is preferable that the thickness of the substrate (here, the substrate 390), which is the substrate on the display surface side, is sufficiently thin. For the substrate 390, for example, it is preferable to apply a glass substrate having a thickness of 0.1 mm or more and less than 0.5 mm, preferably 0.1 mm or more and 0.3 mm or less, a resin substrate having a thickness of 1 μm or more and 200 μm or less. As a result, blurring of the image can be reduced and the image can be displayed clearly.

The display device 300B and the display device 300C produce colored layers 131, electrodes 113, etc. on the production substrate, transfer them from the production substrate to the substrate 351 and then attach the substrate 390 to the substrate 351 using the adhesive layer 392. It is made by. Therefore, the substrate 390 is not required to have high heat resistance and high rigidity to withstand the manufacturing process. In addition, the process of thinning the substrate, typically the polishing process, can be reduced. By reducing the polishing process, the yield of manufacturing the display device can be increased.

The display device 300A described above has a configuration formed by directly forming the colored layer 131, the electrodes 113, and the like on the substrate 361. In the case of such a configuration, it is preferable to reduce the thickness of the substrate 361 by polishing or the like after the substrate 351 and the substrate 361 are bonded together.

By using a liquid crystal material that operates in the guest-host liquid crystal mode for the liquid crystal element 180, the light diffusion layer 136 and the polarizing plate 135 can be omitted. Therefore, the productivity of the display device can be increased. Further, by not providing the light diffusion layer 136 and the polarizing plate 135, the display of the display device can be brightened. Therefore, the visibility of the display device can be improved.

FIG. 14 shows a cross-sectional view of the display device 300D. The display device 300D does not have the substrate 361 and the polarizing plate 135, but has a touch sensor, an adhesive layer 392, a substrate 390, and an antireflection member 396. Other configurations are the same as those of the display device 300A. Note that the transistor 203 is not shown in FIG. Further, depending on the operation mode of the liquid crystal element 180, one or both of the polarizing plate and the light diffusion layer are provided.

In one aspect of the present invention, a display device (also referred to as an input / output device or a touch panel) equipped with a touch sensor can be manufactured.

The touch sensor of the display device can be said to be an example of the input device. The input device is provided so as to overlap the display unit, and has a function of converting the operation of the user touching the display unit into an electric signal and outputting the input device.

The detection element (also referred to as a sensor element) included in the display device of one aspect of the present invention is not limited. Various sensors capable of detecting the proximity or contact of the object to be detected such as a finger or a stylus can be applied as a detection element.

For example, as a sensor method, various methods such as a capacitance method, a resistance film method, a surface acoustic wave method, an infrared method, an optical method, and a pressure sensitive method can be used.

In the present embodiment, a display device having a capacitance type detection element will be described as an example.

As the capacitance method, there are a surface type capacitance method, a projection type capacitance method and the like. Further, as the projection type capacitance method, there are a self-capacitance method, a mutual capacitance method and the like. The mutual capacitance method is preferable because simultaneous multipoint detection is possible.

The display device according to one aspect of the present invention has a configuration in which a separately manufactured display panel and a detection element are bonded together, a configuration in which electrodes or the like constituting the detection element are provided on one or both of a pair of substrates of the display panel, and the like. Various configurations can be applied.

A conductive layer that transmits visible light can be used as the wiring and electrodes of the detection element. Further, it is preferable to use a metal mesh as the wiring and the electrode, which has a lower resistance and can be applied to a large display device. In general, metal is a material having a high reflectance, but it can be darkened by subjecting it to an oxidation treatment or the like. Therefore, even when visually recognized from the substrate 390 side, it is possible to suppress a decrease in visibility due to reflection of external light.

Further, the wiring and the electrode may be formed by laminating a metal layer and a layer having a low reflectance (also referred to as a “dark color layer”). Examples of dark-colored layers include layers containing copper oxide, layers containing copper chloride or tellurium chloride, and the like. Further, the dark color layer is formed by using metal fine particles such as Ag particles, Ag fibers and Cu particles, nanocarbon particles such as carbon nanotubes (CNT) and graphene, and conductive polymers such as PEDOT, polyaniline and polypyrrole. You may.

Since the input device can be manufactured in a process separate from the manufacturing process of at least one of the transistor, the liquid crystal element 180, and the light emitting element 170, the yield of each element can be improved.

The display device 300D shown in FIG. 14 has a conductive layer 331, an insulating layer 332, a conductive layer 333, a conductive layer 334, an electrode 113a, an electrode 311 g, an electrode 311 h, and the like.

The two conductive layers 333 provided so as to sandwich the conductive layer 334 are electrically connected via the conductive layer 331. The conductive layer 331 and the conductive layer 334 are electrically insulated from each other by the insulating layer 332.

The conductive layer 333 is electrically connected to the electrode 113a. The electrode 113a can be formed by the same conductive film and the same process as the electrode 113. In the connecting portion 253, the electrode 113a is electrically connected to the electrode 311g via the connecting body 243. Thereby, the signal or potential input from the FPC (FPC372 or an FPC different from the FPC372) connected to the board 351 side can be supplied to the touch sensor provided on the board 390 side via the connecting portion 253. ..

<< Example 2 of manufacturing method of display device >>
Manufacturing Method of Display Device Among the steps from step S1 to step S10 described in Example 1, the display device 300B, the display device 300C, and the display device 300D can be manufactured by changing the process of step S9. When manufacturing the display device 300B, the display device 300C, and the display device 300D, step S9 includes the following steps S11 to S18. Hereinafter, a method of manufacturing the display device 300D will be described with reference to FIGS. 15 to 19. A detailed description of the same part as the manufacturing method of the display device 300A will be omitted.

[Step S11: Preparing the fabrication substrate 94]
First, the production substrate 94 is prepared in the same manner as in step S1 (FIGS. 3 and 4 (A)) (FIG. 15).

[Step S12: Forming Metal Oxide Layer 90]
Next, the metal oxide layer 90 is formed on the manufacturing substrate 94 in the same manner as in step S2 (FIGS. 3 and 4 (B1)) (FIG. 15).

[Step S13: Forming the resin layer 93]
Next, in the same manner as in step S3 (FIGS. 3, 4 (C), and 4 (D)), the resin layer is formed by forming a first layer on the metal oxide layer 90 and performing heat treatment. Form 93 (Fig. 15).

[Step S14: Forming a functional layer]
Next, a functional layer is formed on the resin layer 93 (FIGS. 15 and 16 (A)). A cross-sectional view of the display device 300B or the display device 300C is shown in FIG. 16 (B). FIG. 16B can be said to be a cross-sectional view when the functional layer does not have a detection element.

First, as shown in FIG. 16A, the conductive layer 331 is formed on the resin layer 93. After forming an insulating layer having a high barrier property on the resin layer 93, the conductive layer 331 may be formed on the insulating layer.

Then, the insulating layer 332 that covers the conductive layer 331 is formed. Next, an opening reaching the conductive layer 331 is formed in the insulating layer 332. Then, the conductive layer 333 and the conductive layer 334 are formed on the insulating layer 332. The conductive layer 333 is electrically connected to the conductive layer 331 through the opening of the insulating layer 332.

Here, in order to show an example in which a metal mesh is used for the wiring and the electrodes of the detection element, the detection element is formed in a portion other than the display region using the liquid crystal element 180 and the light emitting element 170. When the wiring and the electrode of the detection element are formed by using a conductive material that transmits visible light, the wiring and the electrode may be arranged in the display area.

Next, the insulating layer 335 that covers the conductive layer 333 and the conductive layer 334 is formed. As the insulating layer 332 and the insulating layer 335, an inorganic insulating film, a resin, or the like can be used, respectively.

Next, the colored layer 131 and the light-shielding layer 132 are formed on the insulating layer 335. As shown in FIG. 16B, when the functional layer is not provided with the detection element, the insulating layer 91 is formed on the resin layer 93, and the colored layer 131 and the light-shielding layer 132 are formed on the insulating layer 91. do. The insulating layer 91 is preferably formed so as to have an inorganic insulating film having a high barrier property.

Next, the insulating layer 121 is formed on the colored layer 131 and the light-shielding layer 132. Next, an opening reaching the conductive layer 333 is formed in the insulating layer 121 and the insulating layer 335.

Next, the electrode 113 and the electrode 113a are formed. The electrode 113a is electrically connected to the conductive layer 333 through the openings of the insulating layer 121 and the insulating layer 335.

Next, the insulating layer 117 is formed on the electrode 113.

Next, the alignment film 133b is formed on the electrode 113 and the insulating layer 117. The alignment film 133b can be formed by forming a thin film such as a resin and then performing a rubbing treatment.

[Step S15: Seal the liquid crystal layer 112]
The production substrate 94 for which the above steps have been completed and the substrate 351 for which the steps up to step S8 have been completed are bonded together using the adhesive layer 141 (FIGS. 15 and 17). The production substrate 94 and the substrate 351 are bonded together with the liquid crystal layer 112 sandwiched between the alignment film 133a and the alignment film 133b.

In the connecting portion 253, the electrode 113a and the electrode 311g are electrically connected via the connecting body 243.

[Step S16: Irradiate / separate light]
Next, the metal oxide layer 90 and the resin layer 93 are separated in the same manner as in step S7 (FIGS. 3, 7, and 8) (FIGS. 15 and 18). As a result, the detection element, the colored layer 131, and the like manufactured on the manufactured substrate 94 can be transposed to the substrate 351.

In the liquid crystal element 180, the adhesion between the electrode and the liquid crystal layer may be low. Therefore, if the manufactured substrate 94 is to be peeled off by using a human hand, a jig, a roller, or the like, the film peeling occurs in the liquid crystal element 180, and the liquid crystal element 180 may be destroyed. In the present embodiment, the metal oxide layer 90 and the resin layer 93 can be separated by irradiating with light. Since it is not necessary to peel off the manufactured substrate 94 with a strong force, it is possible to suppress the peeling of the film in the liquid crystal element 180 and increase the yield of separation.

[Step S17-1: Determine whether to remove the resin layer 93]
When removing the resin layer 93 after the separation, the process proceeds to step S17-2. If the resin layer 93 is not removed, the process proceeds to step 18. Since the resin layer 93 is a layer located closer to the display surface than the display element, the display quality of the display device may be improved by removing the resin layer 93. The resin layer 93 may not be removed depending on the degree of translucency and the degree of thickness of the resin layer 93.

In the second production method example 2, a case where the resin layer 93 is removed will be described.

[Step S17-2: Remove the resin layer 93]
The resin layer 93 can be removed in the same manner as in step S8-2 (FIGS. 3 and 9 (A)) (FIG. 15).

[Step S18: Bonding the substrates 390]
Next, the substrate 351 and the substrate 390 are bonded together using the adhesive layer 392 (FIGS. 15 and 19). The substrate 390 provided with the antireflection member 396 can be attached to the substrate 351. Alternatively, the antireflection member 396 may be provided on the substrate 390 after the substrate 351 and the substrate 390 are bonded together.

As described above, in step S9 of FIG. 3, steps S11 to S18 of FIG. 15 are performed.

After that, in step S10 (FIG. 3), the FPC 372, the IC, and the like can be electrically connected.

From the above, the display device 300D shown in FIG. 14 can be manufactured.

<< Display device configuration example 3 >>
Hereinafter, a display device having a configuration different from that of the display device 300A will be described with reference to FIG. A detailed description of the same portion as that of the display device 300A will be omitted.

FIG. 20 shows a cross-sectional view of the display device 300E. The display device 300E does not have the substrate 361 and the polarizing plate 135, but has an insulating layer 91a, an adhesive layer 97, an insulating layer 91b, a touch sensor, an adhesive layer 392, a substrate 390, and an antireflection member 396. Further, the display device 300E has at least two FPCs and two connecting bodies (FPC372a, FPC372b, connecting layer 242a, and connecting layer 242b). Other configurations are the same as those of the display device 300A. Depending on the operation mode of the liquid crystal element 180, one or both of the polarizing plate and the light diffusion layer are provided.

The display device 300E has a conductive layer 331, an insulating layer 332, a conductive layer 333, a conductive layer 334, a conductive layer 336, and the like.

The two conductive layers 333 provided so as to sandwich the conductive layer 334 are electrically connected via the conductive layer 331. The conductive layer 331 and the conductive layer 334 are electrically insulated from each other by the insulating layer 332.

The conductive layer 333 is electrically connected to the conductive layer 336. The conductive layer 336 can be formed by the same conductive film and the same process as the conductive layer 331. The conductive layer 336 is electrically connected to the FPC 372b via the connecting layer 242b.

<< Example 3 of manufacturing method of display device >>
Hereinafter, a method of manufacturing the display device 300E will be described with reference to FIGS. 21 to 29. A detailed description of the same part as the manufacturing method of the display device 300A will be omitted.

Manufacturing Method of Display Device Among the steps from step S1 to step S10 described in Example 1, the display device 300E can be manufactured by changing the process of step S9. When manufacturing the display device 300E, step S9 includes a step from step S21 to step S27, a step from step S31 to step S37, and a step S28. The steps from step S21 to step S27 and the steps from step S31 to step S37 can be performed independently of each other. After step S27 and step S37, step S28 is performed.

[Step S21: Prepare the fabrication substrate 94a]
First, the production substrate 94a is prepared in the same manner as in step S1 (FIGS. 3 and 4 (A)) (FIG. 21).

[Step S22: Forming Metal Oxide Layer 90a]
Next, the metal oxide layer 90a is formed on the manufacturing substrate 94a in the same manner as in step S2 (FIGS. 3 and 4 (B1)) (FIG. 21).

[Step S23: Forming the resin layer 93a]
Next, in the same manner as in step S3 (FIGS. 3, 4 (C), and 4 (D)), a first layer is formed on the metal oxide layer 90a and heat-treated to obtain a resin layer. It forms 93a (FIG. 21).

[Step S24: Forming the First Functional Layer]
Next, the first functional layer is formed on the resin layer 93a (FIGS. 21 and 22).

First, it is preferable to form the insulating layer 91a on the resin layer 93a. The insulating layer 91a is preferably formed so as to have an inorganic insulating film having a high barrier property.

Next, the colored layer 131 and the light-shielding layer 132 are formed on the insulating layer 91a. Next, the insulating layer 121 is formed on the colored layer 131 and the light-shielding layer 132. Next, the electrode 113 is formed. Next, the insulating layer 117 is formed on the electrode 113. Next, the alignment film 133b is formed on the electrode 113 and the insulating layer 117. For details of these forming methods, refer to Production Method Example 1.

[Step S25: Seal the liquid crystal layer 112]
The production substrate 94a for which the step S24 has been completed and the substrate 351 for which the steps up to step S8 have been completed are bonded together using the adhesive layer 141 (FIGS. 21 and 23). The production substrate 94a and the substrate 351 are bonded together with the liquid crystal layer 112 sandwiched between the alignment film 133a and the alignment film 133b.

[Step S26: Irradiate / separate light]
Next, the metal oxide layer 90a and the resin layer 93a are separated in the same manner as in step S7 (FIGS. 3, 7, and 8) (FIGS. 21 and 24).

[Step S27-1: Determine whether to remove the resin layer 93a]
When removing the resin layer 93a after the separation, the process proceeds to step S27-2. If the resin layer 93a is not removed, the process proceeds to step 28. Since the resin layer 93a is a layer located closer to the display surface than the display element, the display quality of the display device may be improved by removing the resin layer 93a. Depending on the degree of translucency and the degree of thickness of the resin layer 93a, it is not necessary to remove the resin layer 93a.

In the present production method Example 3, the case where the resin layer 93a is removed will be described.

[Step S27-2: Remove the resin layer 93a]
The resin layer 93a can be removed in the same manner as in step S8-2 (FIGS. 3 and 9) (FIG. 25).

As described above, by performing steps S21 to S27, the electrodes 113, the colored layer 131, and the like produced on the production substrate 94a can be transposed to the substrate 351.

Further, steps S31 to S37 are performed independently of steps S21 to S27.

[Step S31: Prepare the fabrication substrate 94b]
First, the production substrate 94b is prepared in the same manner as in step S1 (FIGS. 3 and 4 (A)) (FIG. 21).

[Step S32: Forming the metal oxide layer 90b]
Next, the metal oxide layer 90b is formed on the manufacturing substrate 94b in the same manner as in step S2 (FIGS. 3 and 4 (B1)) (FIG. 21).

[Step S33: Forming the resin layer 93b]
Next, in the same manner as in step S3 (FIGS. 3, 4 (C), and 4 (D)), a first layer is formed on the metal oxide layer 90b and heat-treated to obtain a resin layer. It forms 93b (Fig. 21).

[Step S34: Forming a Second Functional Layer]
Next, a second functional layer is formed on the resin layer 93b (FIGS. 21 and 26 (A)).

First, it is preferable to form the insulating layer 91b on the resin layer 93b. The insulating layer 91b is preferably formed so as to have an inorganic insulating film having a high barrier property.

Next, the conductive layer 331 and the conductive layer 336 are formed on the insulating layer 91b. Then, the insulating layer 332 that covers the conductive layer 331 and the conductive layer 336 is formed. Next, an opening reaching the conductive layer 331 and the conductive layer 336 is formed in the insulating layer 332. Then, the conductive layer 333 and the conductive layer 334 are formed on the insulating layer 332. The conductive layer 333 is electrically connected to the conductive layer 331 through the opening of the insulating layer 332. Further, the conductive layer 333 is electrically connected to the conductive layer 336 through the opening of the insulating layer 332.

When one or both of the polarizing plate and the light diffusing layer are provided in the display device, the light diffusing layer 136 is placed on the insulating layer 332, the conductive layer 331, and the conductive layer 336 as shown in FIG. 26 (B). The polarizing plate 135 can be provided on the light diffusion layer 136.

[Step S35: Bonding the substrates 390]
Next, the production substrate 94b and the substrate 390 are bonded together using the adhesive layer 392 (FIGS. 21 and 27 (A)). Here, a substrate 390 provided with an antireflection member 396 is used.

[Step S36: Irradiate / separate light]
Next, the metal oxide layer 90b and the resin layer 93b are separated in the same manner as in step S7 (FIGS. 3, 7, and 8) (FIGS. 21, 27 (B), and 28 (A)). ..

[Step S37-1: Determine whether to remove the resin layer 93b]
When removing the resin layer 93b after the separation, the process proceeds to step S37-2. If the resin layer 93b is not removed, the process proceeds to step 38. Since the resin layer 93b is a layer located closer to the display surface than the display element, the display quality of the display device may be improved by removing the resin layer 93b. The resin layer 93b may not be removed depending on the degree of translucency and the degree of thickness of the resin layer 93b.

In the present production method Example 3, the case where the resin layer 93b is removed will be described.

[Step S37-2: Remove the resin layer 93b]
The resin layer 93b can be removed in the same manner as in step S8-2 (FIGS. 3 and 9) (FIG. 28 (B)).

As described above, by performing steps S31 to S37, the detection element manufactured on the manufactured substrate 94b can be transposed to the substrate 390.

[Step S28: Paste the first functional layer and the second functional layer]
The substrate 351 completed up to step S27 and the substrate 390 completed up to step S37 are bonded together using the adhesive layer 141 (FIGS. 21 and 29).

As described above, in step S9 of FIG. 3, the step shown in FIG. 21 is performed.

After that, in step S10 (FIG. 3), the FPC372a, FPC372b, IC, and the like can be electrically connected.

From the above, the display device 300E shown in FIG. 20 can be manufactured.

<< Display device configuration example 4 >>
Hereinafter, a display device having a configuration different from that of the display device 300A will be described with reference to FIGS. 30 and 31. A detailed description of the same portion as that of the display device 300A will be omitted.

FIG. 30 shows a cross-sectional view of the display device 300F. The display device 300F has a resin layer 23 and an insulating layer 31. The electrode 311c is electrically connected to the connecting layer 242 via the openings provided in the resin layer 23 and the insulating layer 31. Similarly, the electrode 311e is electrically connected to the connecting body 243 through the openings provided in the resin layer 23 and the insulating layer 31. Other configurations are the same as those of the display device 300A. Depending on the operation mode of the liquid crystal element 180, one or both of the polarizing plate and the light diffusion layer are provided.

FIG. 31 shows a cross-sectional view of the display device 300G. In the display device 300G, the thickness of the resin layer 23 is thinner than that of the display device 300F. Further, the display device 300G does not have the alignment film 133a. Other configurations are the same as those of the display device 300F. In the display device 300G, the resin layer 23 functions as an alignment film. The electrode 311c is electrically connected to the connecting layer 242 through the openings provided in the resin layer 23 and the insulating layer 31. Similarly, the electrode 311e is electrically connected to the connecting body 243 through the openings provided in the resin layer 23 and the insulating layer 31. The electrodes 311c and 311e project from the surface of the resin layer 23.

<< Example 4 of manufacturing method of display device >>
Hereinafter, a method of manufacturing the display device 300F and the display device 300G will be described with reference to FIGS. 3 and 32 to 34. A detailed description of the same part as the manufacturing method of the display device 300A will be omitted.

[Step S1: Prepare the fabrication substrate 14]
First, the fabrication substrate 14 is prepared (FIG. 3).

[Step S2: Forming the metal oxide layer 20]
Next, the metal oxide layer 20 is formed on the fabrication substrate 14 (FIG. 3).

[Step S3: Forming the resin layer 23]
Next, a first layer is formed on the metal oxide layer 20. Then, the resin layer 23 is formed by heat-treating the first layer (FIGS. 3 and 32 (A)).

Here, the resin layer 23 is provided with an opening that reaches the metal oxide layer 20.

As will be described later, in the portion where the resin layer 23 is provided with an opening, separation occurs at the interface between the metal oxide layer 20 and the conductive layer. The smaller the size of one opening of the resin layer 23, the easier it is to separate the metal oxide layer 20 and the conductive layer at the interface, and the higher the yield can be. For example, the area of one opening provided in the resin layer 23 is preferably smaller than 10 μm square, more preferably 5 μm square or less, and even more preferably 3 μm square or less. Further, when a plurality of openings are provided in the resin layer 23, the longer the shortest distance between the two adjacent openings, the easier the separation at the interface between the metal oxide layer 20 and the conductive layer, and the higher the yield. For example, the shortest distance between two adjacent openings is preferably 1 μm or more, more preferably 5 μm or more, more preferably 10 μm or more, more preferably 50 μm or more, still more preferably 200 μm or more.

Although one opening is shown in the resin layer 23 in FIG. 32 (A), a plurality of small openings may be provided in the opening. The plurality of openings may be arranged regularly such as in a matrix, or may be arranged irregularly.

When a photosensitive material is used, for example, a photolithography method can be used to form the resin layer 23 having a desired shape.

When a non-photosensitive material is used, for example, the resin layer 23 having a desired shape can be formed by etching with a mask.

[Step S4: Forming a transistor]
Next, a layer to be peeled off including a transistor is formed on the resin layer 23.

It is preferable to form the insulating layer 31 on the resin layer 23 (FIG. 32 (B)).

As shown in FIG. 32 (B), the insulating layer 31 is formed with an opening that reaches the metal oxide layer 20.

Next, the electrode 311a, the electrode 311c, and the electrode 311e are formed on the insulating layer 31 (FIG. 32 (B)). Then, the electrode 311b is formed on the electrode 311a, the electrode 311d is formed on the electrode 311c, and the electrode 311f is formed on the electrode 311e. The electrode 311b has an opening 451 on the electrode 311a.

The electrode 311c and the electrode 311e are in contact with the metal oxide layer 20 through the openings provided in the resin layer 23 and the insulating layer 31, respectively.

After that, the insulating layer 220 to the insulating layer 214 are formed. For details of these steps, refer to Production Method Example 1.

[Step S5: Forming the light emitting element 170]
Next, the light emitting element 170 is formed (FIG. 3).

[Step S6: Seal the light emitting element 170]
Next, the light emitting element 170 is sealed (FIG. 3). As a result, the laminated structure shown in FIG. 32 (C) can be produced.

[Step S7: Irradiate / separate light]
Next, the metal oxide layer 20 and the resin layer 23 are separated (FIGS. 3 and 33). At the opening of the resin layer 23, separation occurs at the interface between the metal oxide layer 20 and the electrode 311c and at the interface between the metal oxide layer 20 and the electrode 311e. Thereby, the transistor, the light emitting element 170, etc. manufactured on the manufactured substrate 14 can be transposed to the substrate 351.

[Step S8-1: Determine whether to remove the resin layer 23]
When removing the resin layer 23 after the separation, the process proceeds to step S8-2. If the resin layer 23 is not removed, the process proceeds to step 9.

When manufacturing the display device 300F, the step of removing the resin layer 23 is unnecessary.

When manufacturing the display device 300G, a part of the resin layer 23 may be removed. Specifically, the resin layer 23 may be thinned to a thickness suitable for functioning as an alignment film.

[Step S8-2: Remove the resin layer 23]
FIG. 34 shows an example in which a part of the resin layer 23 is removed to reduce the thickness of the resin layer 23. By removing a part of the resin layer 23, a part of the electrode 311c and a part of the electrode 311e protrude.

[Step S9: Forming the liquid crystal element 180]
Next, the liquid crystal element 180 is formed (FIG. 3).

[Step S10: Implement]
After that, the FPC 372, the IC, and the like can be electrically connected. Further, the polarizing plate 135 or the like can be arranged on the display surface of the substrate 361.

As described above, the display device 300F shown in FIG. 30 and the display device 300G shown in FIG. 31 can be manufactured, respectively.

<< Display device configuration example 5 >>
Hereinafter, a display device having a configuration different from that of the display device 300A will be described with reference to FIG. 35. A detailed description of the same portion as that of the display device 300A will be omitted.

FIG. 35 shows a cross-sectional view of the display device 300H. The display device 300H has a transistor structure different from that of the display device 300A. Other configurations are the same as those of the display device 300A.

The transistor 203 and the transistor 206 included in the display device 300A are of the BGTC (Bottom Gate Top Contact) type. On the other hand, the transistor 203 and the transistor 206 included in the display device 300H are of the (Top Gate Self Align) type.

Specifically, the transistor 203 and the transistor 206 included in the display device 300H include a conductive layer 223 that functions as a gate, an insulating layer 211b that functions as a gate insulating layer, a conductive layer 222a and a conductive layer 222b that function as sources and drains, and a conductive layer 222b. , Has a semiconductor layer 231.

The transistor 201 and the transistor 205 included in the display device 300H have a conductive layer 221a that functions as a gate and an insulating layer 211a that functions as a gate insulating layer, in addition to the configurations of the transistor 203 and the transistor 206.

<< Display device configuration example 6 >>
Hereinafter, a display device having a configuration different from that of the display device 300A will be described with reference to FIG. 36. A detailed description of the same portion as that of the display device 300A will be omitted.

FIG. 36 shows a cross-sectional view of the display device 300J.

The substrate 351 and the substrate 361 are bonded so that the liquid crystal layer 112 is sandwiched between the alignment film 133a and the alignment film 133b. The liquid crystal element 180 has an electrode 311a, an electrode 311b, an electrode 311c, a liquid crystal layer 112, and an electrode 113.

As the pixel electrodes of the liquid crystal element 180, the electrodes 311a, 311b, and 311c are laminated in this order from the alignment film 133a side. The end of the electrode 311a and the end of the electrode 311c are located outside the end of the electrode 311b and are in contact with each other. A conductive film that transmits visible light is used for the electrodes 311a and 311c. A conductive film that reflects visible light is used for the electrode 311b. The electrode 311b is provided with an opening 451. The opening 451 overlaps the light emitting region of the light emitting element 170.

An insulating layer 115 is formed between the alignment film 133a and the pixel electrodes of the liquid crystal element 180. The insulating layer 115 preferably has a high barrier property. As the insulating layer 115, a silicon film containing nitrogen such as a silicon nitride film or a silicon oxide film is suitable.

The electrode 311c and the conductive layer 224 overlap each other via the insulating layer 220a. The conductive layer 224 functions as one electrode of the capacitive element. The conductive layer 224 overlaps the transistor 203, the transistor 205, and the transistor 206 via the insulating layer 220b. The source or drain of the transistor 206 is electrically connected to the electrode 311c at the connection 207. Transistor 205 has two gates. The two gates are electrically connected. The source or drain of the transistor 205 is electrically connected to the electrode 191 of the light emitting element 170 via the conductive layer 228. Each transistor is covered with an insulating layer 212, an insulating layer 213, an insulating layer 214, an insulating layer 225, and an insulating layer 215. It is preferable that one or more of these insulating layers have a high barrier property. FIG. 36 shows an example in which a material having a high barrier property is used for the insulating layer 213 and the insulating layer 225. The insulating layer 213 is provided so as to cover the ends of the openings provided in the insulating layer 220a, the insulating layer 220b, the insulating layer 212, and the like. The insulating layer 225 is provided so as to cover the end portion of the opening provided in the insulating layer 214. The coating film 226 is a film that reflects visible light. The coating film 226 has a function of reflecting a part of the light emitted from the light emitting element 170 and supplying it to the opening 451 side. The lens 227 has a function of transmitting the light emitted from the light emitting element 170. The lens 227 overlaps the light emitting region of the light emitting element 170. The display device has many insulating films from the insulating layer 115 to the insulating layer 215. Therefore, the number of layers into which the light from the light emitting element 170 is incident can be reduced by forming an opening in one or more insulating layers by overlapping with the opening 451. Thereby, the light extraction efficiency can be improved. It is preferable that an interface having a large difference in refractive index does not occur in the region through which light passes. FIG. 36 shows an example in which an opening overlapping the opening 451 is formed in the insulating layer 220a, the insulating layer 220b, and the like. The light emitting element 170 has an electrode 191 and an EL layer 192, and an electrode 193. The EL layer 192 is painted separately for each sub-pixel. The end of the electrode 191 is covered with an insulating layer 216. The insulating layer 217 has a function as a spacer. The light emitting element 170 and the substrate 351 are bonded to each other by the adhesive layer 142.

A colored layer 131, an insulating layer 121, an insulating layer 232, an electrode 113, an insulating layer 117, and an alignment film 133b are provided on one surface of the substrate 361. FIG. 36 shows an example in which the colored layer 131 does not overlap with the light emitting region of the light emitting element 170. The insulating layer 121 functions as an overcoat. An insulating film having a high barrier property is suitable for the insulating layer 232. The electrode 113 functions as a common electrode of the liquid crystal element 180. The insulating layer 117 functions as a spacer for holding the cell gap of the liquid crystal element 180. The insulating layer 117 transmits visible light.

Further, a diffusion film 233 and a polarizing plate 135 are bonded to the other surface of the substrate 361. A substrate 235 provided with a touch sensor on one surface is attached to a polarizing plate 135. In addition, in FIG. 36, there is a part where the illustration of the adhesive layer is omitted. The other surface of the substrate 235 is preferably antireflection processed. For example, it is preferable that anti-glare treatment is applied. Due to the unevenness of the surface, the reflected light can be diffused and the reflection can be reduced. An insulating layer 234c is provided between the conductive layer 234a and the conductive layer 234b of the touch sensor. The conductive layer 234b is covered with an insulating layer 234d.

<Laser irradiation unit>
Next, an example of the laser irradiation unit will be described with reference to FIGS. 37 (A) and 37 (B).

The laminated body 56 shown in FIGS. 37 (A) and 37 (B) has, for example, a structure in which the stripped body 56a and the support 56b are laminated. The laminated body 56 is peeled off between the body to be peeled 56a and the support 56b. The stripped body 56a has, for example, a resin layer, and the support 56b has, for example, a fabrication substrate.

The transport roller 644 can transport the laminated body 56. The transport mechanism for transporting the laminated body 56 is not limited to the transport roller, and a belt conveyor, a transport robot, or the like may be used. Further, the laminated body 56 may be arranged on the stage on the transport mechanism.

The laser irradiation unit 610 is a unit that irradiates the laminated body 56 with a laser. As the laser, for example, an excimer laser that outputs ultraviolet light having a wavelength of 308 nm can be used. Further, a high-pressure mercury lamp, a UV-LED, or the like may be used.

As shown in FIG. 37 (A), the laminated body 56 is conveyed to the laser irradiation unit 610 with the support 56b located on the upper side.

The excimer laser is a high-power pulse laser, and the beam can be linearly shaped by an optical system. By moving the substrate at the irradiation position of the laser beam of the linear beam, the laser beam can be irradiated to the entire substrate or a necessary place. If the linear beam has a length equal to or longer than one side of the substrate to be used, the entire substrate can be irradiated with the laser beam only by moving the substrate in one direction. The oscillation frequency of the pulse laser is preferably 1 Hz or more and 300 Hz or less, and more preferably around 60 Hz.

As the excimer laser device, in addition to a device equipped with one laser oscillator, a device equipped with two or more laser oscillators can also be used. In a device equipped with a plurality of laser oscillators, a laser beam having a high energy density can be obtained by synthesizing (superimposing) the laser beams synchronously output from the respective laser oscillators in an optical system. Therefore, in the application of the present embodiment, the third generation (600 mm × 720 mm) or more, the sixth generation glass substrate (1500 mm × 1850 mm) or more, the seventh generation (1870 mm × 2200 mm) or more, or the eighth generation glass. It is also possible to perform processing having a size larger than that of a substrate (2160 mm × 2460 mm). Further, in a device equipped with a plurality of laser oscillators, the laser beams output from the respective laser oscillators complement each other's output variation, so that the intensity variation for each pulse is reduced and high yield processing can be performed. .. A plurality of excimer laser devices may be used instead of the plurality of oscillators.

FIG. 37 (A) shows an example of the laser irradiation unit 610 using an excimer laser. The laser beams 610a and 610b output from the excimer laser apparatus 660 having two laser oscillators are combined by the optical system 635. Further, the laser beam 610c stretched horizontally by the optical system 635 is incident on the lens 680 through the mirror 650. The laser beam 610d transmitted through the lens 680 is reduced as compared with the laser beam 610c. At this time, the laser beam 610d is applied to the processed region 640 of the laminated body 56 via the support 56b (for example, a glass substrate). In the following, the portion of the laser beam 610d that irradiates the processed region 640 will be referred to as a linear beam 610e.

Although an example having two laser oscillators is shown here, a configuration having one laser oscillator may be used, whereby the apparatus can be simplified. Further, the configuration may include three or more laser oscillators, whereby the intensity of the linear beam 610e can be increased.

Then, by moving the laminated body 56 in the direction of the arrow in the drawing by the transport roller 644, the linear beam 610e can be irradiated to the processing region 640.

As shown in FIG. 37 (A), the process time can be shortened by irradiating the linear beam 610e while transporting the laminated body 56 by the transport roller 644 at a constant speed. The laminated body 56 may be arranged on a stage that can move in at least one direction, and the linear beam 610e may be irradiated while moving the stage. When a stage is used, it is preferable to use a stage that can move in the lateral direction and the height direction with respect to the traveling direction so that the position and depth of the focal point of the linear beam 610e can be adjusted. Note that FIG. 37 (A) illustrates a configuration in which the linear beam 610e is irradiated by moving the laminated body 56, but the present invention is not limited to this. For example, the laminated body 56 may be fixed and the excimer laser device 660 or the like may be moved to irradiate the laminated body 56 with the linear beam 610e.

FIG. 37A shows an example in which the processed region 640 irradiated with the linear beam 610e is located inside the end portion of the laminated body 56. As a result, the outer region of the processed region 640 maintains a high degree of adhesion, so that it is possible to prevent peeling from occurring during transportation. The width of the linear beam 610e may be equal to the width of the laminated body 56 or larger than the width of the laminated body 56. In that case, the linear beam 610e can irradiate the entire laminated body 56.

FIG. 37B shows how the linear beam 610e irradiates the processed region 640 of the laminated body 56. The laminated body 56 has a fabrication substrate 58, a first layer 57a, and a second layer 57b. Here, the portion including the manufactured substrate 58 and the second layer 57b corresponds to the support 56b, and the portion including the first layer 57a corresponds to the stripped body 56a.

For example, the first layer 57a corresponds to the resin layer 23, and the second layer 57b corresponds to the metal oxide layer 20.

It is preferable that the laser beam 610d passes through the fabrication substrate 58 and the linear beam 610e is irradiated at or near the interface between the first layer 57a and the second layer 57b. In particular, the linear beam 610e preferably has a focal point located at or near the interface between the first layer 57a and the second layer 57b.

Further, since the focal point of the linear beam 610e is located at the interface between the first layer 57a and the second layer 57b, the water that may exist at the interface between the first layer 57a and the second layer 57b is vaporized. The volume of water may expand rapidly. In this case, it is presumed that the peeling phenomenon occurs at or near the interface between the first layer 57a and the second layer 57b as the volume of water expands.

There is a technique for crystallizing an amorphous silicon film by irradiating the amorphous silicon film with a laser beam. In the case of this technique, the laser beam is focused inside the amorphous silicon film. However, in one aspect of the present invention, as shown in FIG. 37 (B), the focal point of the laser beam (here, the linear beam 610e) is the interface between the first layer 57a and the second layer 57b. Or in the vicinity. As described above, one aspect of the present invention is different from the technique of crystallizing an amorphous silicon film in the focal position of the laser beam.

When the depth of focus of the linear beam 610e is sufficiently large (deep), not only the interface between the first layer 57a and the second layer 57b or its vicinity, but also the entire thickness direction of the first layer 57a, the first layer. The focal point of the linear beam 610e may be located over the entire thickness direction of the second layer 57b, or over the entire thickness direction of both the first layer 57a and the second layer 57b.

As the excimer laser, it is preferable to use a laser having a wavelength of 308 nm or longer. When the wavelength is 308 nm or more, the laser beam required for processing can be sufficiently transmitted even when a glass substrate is used for the support 56b.

<About other separation methods>
Other separation methods that can be used in the method for manufacturing the display device of the present embodiment will be described.

For example, when the separation method using light irradiation is used, the resin layer may be formed directly on the production substrate without providing the metal oxide layer.

Moreover, you may use the method of physically separating. At this time, for example, it is preferable to form a release layer on the manufactured substrate and form a layer to be peeled on the release layer. As the release layer, for example, a laminated structure of a layer containing a refractory metal material such as tungsten and a layer containing an oxide of the metal material can be used. For example, the laminated structure can be formed by forming a metal layer containing a refractory metal material and oxidizing the surface of the metal layer by oxygen plasma treatment or the like.

Of the layers to be peeled, it is preferable to form an inorganic insulating film as a layer in contact with the peeling layer. Then, it is preferable to form a functional element on the inorganic insulating film. The release layer and the inorganic insulating film can be separated by applying a pulling force in the vertical direction to the support substrate on which the release layer and the inorganic insulating film are formed.

Also in the method of physically separating, at the time of separation, a liquid containing water such as water or an aqueous solution is added to the separation interface, and the separation is performed so that the liquid permeates the separation interface, thereby facilitating the separation. Can be done. Further, it is possible to suppress that the static electricity generated at the time of separation adversely affects the functional element such as a transistor (such as the semiconductor element being destroyed by the static electricity).

As described above, by using the method of manufacturing the display device of the present embodiment, it is possible to manufacture a display device having high visibility and high convenience regardless of the ambient brightness. In the manufacturing method of the display device of the present embodiment, the metal oxide layer and the resin layer are laminated on the manufacturing substrate, and the peelability of the resin layer to the metal oxide layer is controlled by irradiating with light. Therefore, the display device can be manufactured with a high yield.

This embodiment can be appropriately combined with other embodiments. Further, in the present specification, when a plurality of configuration examples are shown in one embodiment, the configuration examples can be appropriately combined.

(Embodiment 2)
In the present embodiment, the display device of one aspect of the present invention will be described with reference to FIGS. 38 to 40.

<Concept of display device>
An example of a display device that can be manufactured by applying one aspect of the present invention is a hybrid display. The hybrid display can perform a hybrid display.

The hybrid display is a method of displaying characters or images on one panel by using both reflected light and self-luminous light to complement each other in color tone or light intensity. Alternatively, the hybrid display is a method of displaying characters and / or images on the same pixel or the same sub-pixel using the respective lights from a plurality of display elements. However, when a hybrid display performing hybrid display is locally viewed, it is displayed using two or more of a pixel or a sub-pixel displayed using any one of a plurality of display elements and a plurality of display elements. It may have a pixel or a sub-pixel.

In the present specification and the like, a display that satisfies any one or more of the above configurations is referred to as a hybrid display.

Further, the hybrid display has a plurality of display elements in the same pixel or the same sub-pixel. Examples of the plurality of display elements include a reflective element that reflects light and a self-luminous element that emits light. The reflective element and the self-luminous element can be controlled independently. The hybrid display has a function of displaying characters and / or images in the display unit by using either one or both of reflected light and self-luminous light.

<Display device configuration example>
The display device of the present embodiment has a plurality of first pixels having a first display element and a plurality of second pixels having a second display element. It is preferable that the first pixel and the second pixel are arranged in a matrix, respectively.

It is preferable that the first pixel and the second pixel are arranged in the display area with the same number and the same pitch. At this time, the adjacent first pixel and second pixel can be collectively called a pixel unit. As a result, as will be described later, both the image displayed only by the plurality of first pixels, the image displayed only by the plurality of second pixels, and the plurality of first pixels and the plurality of second pixels. Each of the images displayed in can be displayed in the same display area. The number and pitch of the first pixel and the second pixel may be different from each other or both.

The first pixel and the second pixel can each have one or more sub-pixels. For example, the pixel has a configuration having one sub-pixel (white (W), etc.), a configuration having three sub-pixels (red (R), green (G), and blue (B), or three colors, or Yellow (Y), cyan (C), and magenta (M), etc.) or a configuration with four sub-pixels (red (R), green (G), blue (B), white (W)) (4 colors of red (R), green (G), blue (B), yellow (Y), etc.) can be applied.

The display device of the present embodiment can be configured to perform full-color display on both the first pixel and the second pixel. Alternatively, the display device of the present embodiment may be configured to perform black-and-white display or grayscale display on the first pixel and full-color display on the second pixel. The black-and-white display or the grayscale display using the first pixel is suitable for displaying information that does not require color display, such as document information.

Further, the display device of one aspect of the present invention can reproduce color gamuts of various standards. For example, the PAL (Phase Alternate Line) standard used in television broadcasting, the NTSC (National Television System Committee) standard, and sRGB (standard RGB) widely used in display devices used in electronic devices such as personal computers, digital cameras, and printers. ITU-R BT. Standards and Adobe RGB standards, used in HDTV (High Definition Television, also referred to as HDTV). 709 (International Telecommunication Union Radiocommunication Vector Broadcasting Service (Television) 709) Standard, DCI-P3 (Digital Cinema Initiative) used in Digital Cinema Projection, Ultra-High-Definition Television Standard RBT. It is possible to reproduce a color gamut such as the 2020 (REC. 2020 (Recommendation 2020)) standard.

FIG. 38 is a diagram illustrating a pixel array 40 included in the display device of one aspect of the present invention. The pixel array 40 has a plurality of pixel units 45 arranged in a matrix. The pixel unit 45 has pixels 46 and pixels 47.

FIG. 38 shows an example in which the pixels 46 and the pixels 47 have display elements corresponding to the three colors of red (R), green (G), and blue (B), respectively.

The pixel 46 has a display element 46R corresponding to red (R), a display element 46G corresponding to green (G), and a display element 46B corresponding to blue (B). Each of the display elements 46R, 46G, and 46B is a first display element that utilizes the reflection of external light.

The pixel 47 has a display element 47R corresponding to red (R), a display element 47G corresponding to green (G), and a display element 47B corresponding to blue (B). The display elements 47R, 47G, and 47B are second display elements that utilize the light of the light source, respectively.

<Pixel unit configuration example>
Subsequently, the pixel unit 45 will be described with reference to FIGS. 39 (A), (B), and (C). 39 (A), (B), and (C) are schematic views showing a configuration example of the pixel unit 45.

The pixel 46 includes a display element 46R, a display element 46G, and a display element 46B. The display element 46R reflects external light and emits red light R1 having a brightness corresponding to the gradation value corresponding to the red color included in the first gradation value input to the pixel 46 to the display surface side. .. Similarly, the display element 46G and the display element 46B also emit green light G1 or blue light B1 toward the display surface side.

The pixel 47 includes a display element 47R, a display element 47G, and a display element 47B. The display element 47R has a light source, and emits red light R2 having a brightness corresponding to the gradation value corresponding to the red color included in the second gradation value input to the pixel 47 toward the display surface side. Similarly, the display element 47G and the display element 47B also emit green light G2 or blue light B2 toward the display surface side.

[First mode]
FIG. 39A shows an example of an operation mode in which the display element 46R, the display element 46G, and the display element 46B that reflect external light are driven to display an image. As shown in FIG. 39 (A), the pixel unit 45 does not drive the pixel 47, for example, when the illuminance of the external light is sufficiently high, and the light from the pixel 46 (light R1, light G1, and light). By mixing only B1), light 54 of a predetermined color can be emitted to the display surface side. As a result, it is possible to drive with extremely low power consumption.

[Second mode]
FIG. 39B shows an example of an operation mode in which the display element 47R, the display element 47G, and the display element 47B are driven to display an image. As shown in FIG. 39 (B), the pixel unit 45 does not drive the pixel 46, for example, when the illuminance of the external light is extremely small, and the light from the pixel 47 (light R2, light G2, and light B2). ) Can be mixed to emit light 54 of a predetermined color toward the display surface side. This makes it possible to perform a vivid display. Further, by lowering the brightness when the illuminance of the outside light is low, the glare felt by the user can be suppressed and the power consumption can be reduced.

[Third mode]
FIG. 39C shows an operation of driving both the display element 46R, the display element 46G, and the display element 46B that reflect external light, and the display element 47R, the display element 47G, and the display element 47B that emit light to display an image. An example of the mode is shown. As shown in FIG. 39C, the pixel unit 45 mixes six lights, light R1, light G1, light B1, light R2, light G2, and light B2, to produce light 54 of a predetermined color. It can be ejected to the display surface side.

<Display device operation mode>
Next, the operation modes that can be performed by the first display element and the second display element will be described with reference to FIG. 40.

In the following, a normal mode (Normal mode) that operates at a normal frame frequency (typically 60 Hz or more and 240 Hz or less) and an idling stop (IDS) drive mode that operates at a low frame frequency are exemplified. I will explain.

The IDS drive mode refers to a drive method for stopping the rewriting of image data after executing the image data writing process. By writing the image data once and then extending the interval until the next image data is written, it is possible to reduce the power consumption required for writing the image data during that period. The IDS drive mode can be, for example, a frame frequency of about 1/100 to 1/10 of the normal operation mode. A still image has the same video signal between consecutive frames. Therefore, the IDS drive mode is particularly effective when displaying a still image. By displaying an image using IDS drive, power consumption can be reduced, screen flicker can be suppressed, and eye strain can be reduced.

40 (A1), 40 (A2), 40 (B), and 40 (C) are pixel circuits and timing charts for explaining a normal drive mode and an IDS drive mode. Note that FIG. 40 (A1) shows a first display element 501 (here, a reflective liquid crystal element) and a pixel circuit 506 electrically connected to the first display element 501. Further, in the pixel circuit 506 shown in FIG. 40 (A), the signal line SL, the gate line GL, the transistor M1 connected to the signal line SL and the gate line GL, and the capacitive element Cs _{LC connected to the transistor M1.} Is shown.

Further, FIG. 40 (A2) shows a second display element 502 (light emitting element, for example, an EL element) and a pixel circuit 507 electrically connected to the second display element 502. Further, in the pixel circuit 507 shown in FIG. 40 (A2), the signal line SL, the gate line GL, the transistor M1 connected to the signal line SL and the gate line GL, the transistor M1 and the second display element 502 are connected. The transistor M2, the transistor M1, the transistor M2, and the capacitive element Cs _EL connected to the second display element 502 are shown.

Transistor M1 may become a leak path data _{D 1.} Therefore, the smaller the off current of the transistor M1, the more preferable it is. As the transistor M1, it is preferable to use a transistor having a metal oxide in the semiconductor layer on which the channel is formed. When a metal oxide has at least one of an amplification action, a rectifying action, and a switching action, the metal oxide is referred to as a metal oxide semiconductor or an oxide semiconductor, or OS for short. be able to. Hereinafter, as a typical example of the transistor, a transistor using an oxide semiconductor in the semiconductor layer on which the channel is formed (also referred to as an “OS transistor”) will be described. The OS transistor has a feature that the leakage current (off current) in the non-conducting state is extremely lower than that of the transistor using polycrystalline silicon or the like. By using an OS transistor for the transistor M1, the electric charge supplied to the node ND1 can be retained for a long period of time.

In particular, the EL element used as the second display element 502 has a faster response speed than the liquid crystal element and is sensitive to voltage fluctuations of the node ND1. Therefore, by using the OS transistor for the transistor M1 of the pixel circuit 507, it is possible to reduce the flicker caused by the fluctuation of the charge of the node ND1, which is preferable. The effect is remarkable when some of the second display elements 502 are driven by IDS in the third display mode.

Further, the transistor used for the transistor M2 is also preferably as small as the off current. By using a transistor having a small off-current for the transistor M2, it is possible to reduce a phenomenon (also referred to as "black floating") in which a slight amount of light is emitted when displaying black. Therefore, it is preferable to use an OS transistor for the transistor M2 of the pixel circuit 507.

In the circuit diagram shown in FIG. 40 (A1), the liquid crystal element LC serves as a leak path for the _{data D 1.} Therefore, in order to properly drive the IDS, it is preferable that the resistivity of the liquid crystal element LC is 1.0 × 10 ¹⁴ Ω · cm or more.

For example, In-Ga-Zn oxide, In-Zn oxide, or the like can be preferably used in the channel region of the OS transistor. Further, as the In-Ga-Zn oxide, a composition in the vicinity of In: Ga: Zn = 4: 2: 4.1 [atomic number ratio] can be typically used.

FIG. 40B is a timing chart showing waveforms of signals given to the signal line SL and the gate line GL in the normal drive mode, respectively. In the normal drive mode, it operates at a normal frame frequency (for example, 60 Hz). When the one-frame period is _{represented by the periods T 1} to T ₃ , a scanning signal is given to the gate line GL in each frame period, and the operation of writing the _{data D 1 from the signal line SL to the node ND 1 is performed.} This operation is the same even when the same data D _{1 is written in the periods T 1} to T ₃ or when different data are written.

On the other hand, FIG. 40C is a timing chart showing waveforms of signals given to the signal line SL and the gate line GL in the IDS drive mode. The IDS drive operates at a low frame frequency (for example, 1 Hz). Represents one frame period in the period T _1, representing the period T _W a write period of data _therein, the data retention period in the period T _RET. IDS drive mode gives a scanning signal to the gate line GL in a period _{T W,} write data _{D 1} of the signal line SL, and a gate line GL is fixed to the low level of the voltage in the period _{T RET,} nonconductive transistor M1 The operation of holding the _{data D 1} once written as is performed. The low-speed frame frequency may be, for example, 0.1 Hz or more and less than 60 Hz.

The IDS drive mode is effective because the power consumption can be further reduced by combining with the above-mentioned first mode, second mode, or third mode.

This embodiment can be appropriately combined with other embodiments.

(Embodiment 3)
In the present embodiment, a more specific configuration example of the display device of one aspect of the present invention will be described with reference to FIGS. 41 to 43.

FIG. 41 (A) is a block diagram of the display device 400. The display device 400 includes a display unit 362, a circuit GD, and a circuit SD. The display unit 362 has a plurality of pixels 410 arranged in a matrix.

The display device 400 has a plurality of wirings G11, a plurality of wirings G12, a plurality of wirings ANO, a plurality of wirings CSCOM, a plurality of wirings S1, and a plurality of wirings S2. The plurality of wirings G11, the plurality of wirings G12, the plurality of wirings ANO, and the plurality of wirings CSCOM are electrically connected to the plurality of pixels 410 and the circuit GD arranged in the direction indicated by the arrow R, respectively. The plurality of wirings S1 and the plurality of wirings S2 are electrically connected to the plurality of pixels 410 and the circuit SD arranged in the directions indicated by the arrows C, respectively.

Although the configuration having one circuit GD and one circuit SD is shown here for the sake of simplicity, the circuit GD and the circuit SD for driving the liquid crystal element and the circuit GD and the circuit SD for driving the light emitting element are separated. It may be provided in.

The pixel 410 includes a reflective liquid crystal element and a light emitting element.

41 (B1) to (B4) show a configuration example of the electrode 311 included in the pixel 410. The electrode 311 functions as a reflective electrode of the liquid crystal element. The electrodes 311 of FIGS. 41 (B1) and 41 (B2) are provided with an opening 451.

In FIGS. 41 (B1) and 41 (B2), the light emitting element 360 located in the region overlapping the electrode 311 is shown by a broken line. The light emitting element 360 is arranged so as to overlap the opening 451 of the electrode 311. As a result, the light emitted by the light emitting element 360 is emitted toward the display surface side through the opening 451.

In FIG. 41 (B1), pixels 410 adjacent to each other in the direction indicated by the arrow R are pixels corresponding to different colors. At this time, as shown in FIG. 41 (B1), it is preferable that the electrodes 311 are provided at different positions of the electrodes 311 so that the openings 451 are not arranged in a row in the two pixels adjacent to each other in the direction indicated by the arrow R. As a result, the two light emitting elements 360 can be separated from each other, and a phenomenon (also referred to as crosstalk) in which the light emitted by the light emitting element 360 is incident on the colored layer of the adjacent pixels 410 can be suppressed. Further, since the two adjacent light emitting elements 360 can be arranged apart from each other, a high-definition display device can be realized even when the EL layer of the light emitting element 360 is formed separately by a shadow mask or the like.

In FIG. 41 (B2), pixels 410 adjacent to each other in the direction indicated by the arrow C are pixels corresponding to different colors. Similarly, in FIG. 41 (B2), it is preferable that the electrodes 311 are provided at different positions of the electrodes 311 so that the openings 451 are not arranged in a row in the two pixels adjacent to each other in the direction indicated by the arrow C.

The smaller the value of the ratio of the total area of the openings 451 to the total area of the non-openings, the brighter the display using the liquid crystal element. Further, the larger the value of the ratio of the total area of the opening 451 to the total area of the non-opening, the brighter the display using the light emitting element 360 can be.

The shape of the opening 451 can be, for example, a polygon, a quadrangle, an ellipse, a circle, a cross, or the like. Further, it may have an elongated streak shape, a slit shape, or a checkered pattern shape. Further, the opening 451 may be arranged close to the adjacent pixel. Preferably, the aperture 451 is placed closer to another pixel displaying the same color. As a result, crosstalk can be suppressed.

Further, as shown in FIGS. 41 (B3) and 41 (B4), the light emitting region of the light emitting element 360 may be located in a portion where the electrode 311 is not provided. As a result, the light emitted by the light emitting element 360 is emitted toward the display surface side.

In FIG. 41 (B3), the light emitting elements 360 are not arranged in a row in the two pixels 410 adjacent to each other in the direction indicated by the arrow R. In FIG. 41 (B4), the light emitting elements 360 are arranged in a row in two pixels adjacent to each other in the direction indicated by the arrow R.

In the configuration of FIG. 41 (B3), since the light emitting elements 360 of the two adjacent pixels 410 can be separated from each other, crosstalk can be suppressed and high definition can be achieved as described above. Further, in the configuration of FIG. 41 (B4), since the electrode 311 is not located on the side parallel to the arrow C of the light emitting element 360, it is possible to suppress the light of the light emitting element 360 from being blocked by the electrode 311 and have a high viewing angle. The characteristics can be realized.

Various sequential circuits such as shift registers can be used for the circuit GD. Transistors, capacitive elements, and the like can be used in the circuit GD. The transistor included in the circuit GD can be formed in the same process as the transistor included in the pixel 410.

The circuit SD is electrically connected to the wiring S1. For the circuit SD, for example, an integrated circuit can be used. Specifically, an integrated circuit formed on a silicon substrate can be used for the circuit SD.

For example, the circuit SD can be mounted on a pad electrically connected to the pixel 410 by using a COG method, a COF method, or the like. Specifically, an integrated circuit can be mounted on the pad by using an anisotropic conductive film.

FIG. 42 is an example of a circuit diagram of the pixel 410. FIG. 42 shows two adjacent pixels 410.

The pixel 410 includes a switch SW1, a capacitance element C1, a liquid crystal element 340, a switch SW2, a transistor M, a capacitance element C2, a light emitting element 360, and the like. Further, wiring G11, wiring G12, wiring ANO, wiring CSCOM, wiring S1 and wiring S2 are electrically connected to the pixel 410. Further, FIG. 42 shows the wiring VCOM1 electrically connected to the liquid crystal element 340 and the wiring VCOM2 electrically connected to the light emitting element 360.

FIG. 42 shows an example in which a transistor is used for the switch SW1 and the switch SW2.

The gate of the switch SW1 is connected to the wiring G11. One of the source and drain of the switch SW1 is connected to the wiring S1, and the other is connected to one electrode of the capacitance element C1 and one electrode of the liquid crystal element 340. The other electrode of the capacitive element C1 is connected to the wiring CSCOM. The other electrode of the liquid crystal element 340 is connected to the wiring VCOM1.

The gate of the switch SW2 is connected to the wiring G12. One of the source and drain of the switch SW2 is connected to the wiring S2, and the other is connected to one electrode of the capacitive element C2 and the gate of the transistor M. The other electrode of the capacitive element C2 is connected to one of the source or drain of the transistor M and the wiring ANO. The other of the source or drain of the transistor M is connected to one electrode of the light emitting element 360. The other electrode of the light emitting element 360 is connected to the wiring VCOM2.

FIG. 42 shows an example in which the transistor M has two gates sandwiching the semiconductor and these are connected to each other. As a result, the current that can be passed through the transistor M can be increased.

A signal for controlling the switch SW1 to a conductive state or a non-conducting state can be given to the wiring G11. A predetermined potential can be applied to the wiring VCOM1. A signal for controlling the orientation state of the liquid crystal of the liquid crystal element 340 can be given to the wiring S1. A predetermined potential can be applied to the wiring CSCOM.

A signal for controlling the switch SW2 in a conductive state or a non-conducting state can be given to the wiring G12. The wiring VCOM2 and the wiring ANO can be given potentials that cause a potential difference in which the light emitting element 360 emits light. A signal for controlling the conduction state of the transistor M can be given to the wiring S2.

For example, when displaying the reflection mode, the pixel 410 shown in FIG. 42 can be driven by a signal given to the wiring G11 and the wiring S1 and can be displayed by utilizing optical modulation by the liquid crystal element 340. Further, when the display is performed in the transmission mode, the light emitting element 360 can be made to emit light by being driven by the signal given to the wiring G12 and the wiring S2 for display. When driving in both modes, it can be driven by signals given to each of the wiring G11, the wiring G12, the wiring S1 and the wiring S2.

Note that FIG. 42 shows an example in which one pixel 410 has one liquid crystal element 340 and one light emitting element 360, but the present invention is not limited to this. FIG. 43A shows an example in which one pixel 410 has one liquid crystal element 340 and four light emitting elements 360 (light emitting elements 360r, 360g, 360b, 360w). Unlike FIG. 42, the pixel 410 shown in FIG. 43 (A) is capable of full-color display using a light emitting element with one pixel.

In FIG. 43A, in addition to the example of FIG. 42, the wiring G13 and the wiring S3 are connected to the pixel 410.

In the example shown in FIG. 43 (A), for example, for the four light emitting elements 360, light emitting elements exhibiting red (R), green (G), blue (B), and white (W), respectively, can be used. Further, as the liquid crystal element 340, a reflective liquid crystal element exhibiting white color can be used. As a result, when displaying the reflection mode, it is possible to display white with high reflectance. Further, when the display is performed in the transmission mode, the display with high color rendering property can be performed with low power.

FIG. 43 (B) shows a configuration example of the pixel 410 corresponding to FIG. 43 (A). The pixel 410 has a light emitting element 360w that overlaps with the opening of the electrode 311 and a light emitting element 360r, a light emitting element 360g, and a light emitting element 360b arranged around the electrode 311. It is preferable that the light emitting element 360r, the light emitting element 360g, and the light emitting element 360b have substantially the same light emitting area.

This embodiment can be appropriately combined with other embodiments.

(Embodiment 4)
In the present embodiment, an example of a touch sensor driving method will be described with reference to the drawings.

<Example of sensor detection method>
FIG. 44A is a block diagram showing a configuration of a mutual capacitance type touch sensor. FIG. 44A shows a pulse voltage output circuit 551 and a current detection circuit 552. In FIG. 44A, the electrode 521 to which the pulse voltage is applied and the electrode 522 for detecting the change in the current are shown as six wirings of X1-X6 and Y1-Y6, respectively. Further, FIG. 44A illustrates a capacitance 553 formed by superimposing the electrodes 521 and 522. The functions of the electrode 521 and the electrode 522 may be interchanged with each other.

The pulse voltage output circuit 551 is a circuit for sequentially applying a pulse voltage to the wirings of X1-X6. By applying a pulse voltage to the wiring of X1-X6, an electric field is generated between the electrode 521 and the electrode 522 forming the capacitance 553. The proximity or contact of the object to be detected can be detected by utilizing the fact that the electric field generated between the electrodes causes a change in the mutual capacitance of the capacitance 553 due to shielding or the like.

The current detection circuit 552 is a circuit for detecting a change in the current in the wirings of Y1 to Y6 due to a change in the mutual capacitance in the capacitance 553. In the wiring of Y1 to Y6, the current value detected when there is no proximity or contact of the detected object does not change, but the current value decreases when the mutual capacitance decreases due to the proximity or contact of the detected object to be detected. Detect changes that occur. The current may be detected by using an integrator circuit or the like.

One or both of the pulse voltage output circuit 551 and the current detection circuit 552 may be formed on the substrate 351 or the substrate 361 shown in FIG. 1 or the like. For example, it is preferable to form the display unit 362 and the circuit 364 at the same time because the process can be simplified and the number of parts used for driving the touch sensor can be reduced. Further, one or both of the pulse voltage output circuit 551 and the current detection circuit 552 may be mounted on the IC 373.

In particular, when crystalline silicon such as polycrystalline silicon or single crystal silicon is used for the semiconductor layer on which the channel is formed as the transistor formed on the substrate 351, a circuit such as a pulse voltage output circuit 551 or a current detection circuit 552 can be driven. The capability can be improved and the sensitivity of the touch sensor can be improved.

FIG. 44 (B) shows a timing chart of input / output waveforms in the mutual capacitance type touch sensor shown in FIG. 44 (A). In FIG. 44 (B), it is assumed that the detected object is detected in each matrix in one frame period. Further, FIG. 44B shows two cases, a case where the detected object is not detected (non-touch) and a case where the detected object is detected (touch). The Y1-Y6 wiring shows a waveform with a voltage value corresponding to the detected current value.

A pulse voltage is sequentially applied to the wirings of X1-X6, and the waveform in the wirings of Y1-Y6 changes according to the pulse voltage. When there is no proximity or contact of the object to be detected, the waveform of Y1-Y6 changes uniformly according to the change of the voltage of the wiring of X1-X6. On the other hand, since the current value decreases at the location where the object to be detected is close to or in contact with the object to be detected, the corresponding voltage value waveform also changes.

By detecting the change in mutual capacitance in this way, the proximity or contact of the object to be detected can be detected.

<Example of driving method of display device>
FIG. 45A is a block diagram showing a configuration example of the display device. FIG. 45A shows a gate drive circuit GD (scanning line drive circuit), a source drive circuit SD (signal line drive circuit), and a display unit having a plurality of pixel pixes. In FIG. 45 (A), the gate lines x_1 to x_m (m are natural numbers) electrically connected to the gate drive circuit GD, and the source lines y_1 to y_n (n are natural numbers) electrically connected to the source drive circuit SD. ), Each of the pixels pix is designated with a reference numeral (1,1) to (n, m).

FIG. 45 (B) is a timing chart diagram of signals given to the gate line and the source line in the display device shown in FIG. 45 (A). In FIG. 45B, the case where the data signal is rewritten for each frame period and the case where the data signal is not rewritten are shown separately. Note that FIG. 45 (B) does not consider a period such as a blanking interval.

When the data signal is rewritten every one frame period, scanning signals are sequentially given to the gate lines of x_1 to x_m. In the horizontal scanning period 1H in which the scanning signal is an H level period, the data signal D is given to the source lines y_1 to y_n of each column.

If the data signal is not rewritten every one frame period, the scanning signal given to the gate lines x_1 to x_m is stopped. Further, in the horizontal scanning period 1H, the data signals given to the source lines y_1 to y_n of each column are stopped.

The driving method in which the data signal is not rewritten every one frame period is particularly effective when the oxide semiconductor is applied to the semiconductor layer in which the channel is formed as the transistor of the pixel pix. Transistors to which oxide semiconductors are applied can have an extremely small off-current as compared to transistors to which semiconductors such as silicon are applied. Therefore, the data signal written in the previous period can be retained without rewriting the data signal every frame period, and the pixel gradation is maintained for, for example, 1 second or longer, preferably 5 seconds or longer. You can also do it.

Further, when polycrystalline silicon or the like is applied to the semiconductor layer in which the channel is formed as the transistor of the pixel pix, it is preferable to increase the size of the holding capacity of the pixel in advance. The larger the holding capacity, the longer the pixel gradation can be held. The size of the holding capacity may be set according to the leakage current of the transistor or display element electrically connected to the holding capacity. For example, the holding capacity per pixel is 5 fF or more and 5 pF or less, preferably 10 fF or more and 5 pF. Hereinafter, more preferably, when it is set to 20 fF or more and 1 pF or less, the data signal written in the previous period can be retained without rewriting the data signal every frame period, for example, in a period of several frames or several tens of frames. It is possible to maintain the gradation of the pixels throughout.

<Example of how to drive the display and touch sensor>
46 (A) to (D) show, as an example, the touch sensor described in FIGS. 44 (A) and 44 (B) and the display unit described in FIGS. 45 (A) and 45 (B) for 1 sec. It is a figure explaining the operation of the continuous frame period when it is driven (1 second). Note that FIG. 46 (A) shows a case where one frame period of the display unit is 16.7 ms (frame frequency: 60 Hz) and one frame period of the touch sensor is 16.7 ms (frame frequency: 60 Hz).

In the display device of one aspect of the present invention, the operation of the display unit and the operation of the touch sensor are independent of each other, and a touch detection period can be provided in parallel with the display period. Therefore, as shown in FIG. 46 (A), the one frame period of the display unit and the touch sensor can both be set to 16.7 ms (frame frequency: 60 Hz). Further, the frame frequencies of the touch sensor and the display unit may be different. For example, as shown in FIG. 46 (B), one frame period of the display unit is set to 8.3 ms (frame frequency: 120 Hz), and one frame period of the touch sensor is set to 16.7 ms (frame frequency: 60 Hz). You can also. Further, although not shown, the frame frequency of the display unit may be 33.3 ms (frame frequency: 30 Hz).

In addition, the frame frequency of the display unit can be switched, the frame frequency is increased (for example, 60 Hz or more or 120 Hz or more) when displaying a moving image, and the frame frequency is decreased (for example, 60 Hz) when displaying a still image. Hereinafter, the power consumption of the display device can be reduced by setting the frequency to 30 Hz or less, or 1 Hz or less). Further, the frame frequency of the touch sensor may be switched, and the frame frequency may be different between the standby state and the time when the touch is detected.

Further, in the display device of one aspect of the present invention, one frame period of the display unit is longer than 16.7 ms by holding the data signal rewritten in the previous period without rewriting the data signal in the display unit. It can be a period. Therefore, as shown in FIG. 46 (C), one frame period of the display unit is set to 1 sec. (Frame frequency: 1 Hz) can be set, and one frame period of the touch sensor can be set to 16.7 ms (frame frequency: 60 Hz).

For the configuration of holding the data signal rewritten in the previous period without rewriting the data signal in the display unit, the IDS drive mode described above can be referred to. The IDS drive mode may be a partial IDS drive mode in which the data signal in the display unit is rewritten only in a specific area. The partial IDS drive mode is a configuration in which the data signal in the display unit is rewritten only in a specific area, and the data signal rewritten in the previous period is held in the other areas.

Further, according to the touch sensor driving method disclosed in the present embodiment, when the driving shown in FIG. 46C is performed, the touch sensor can be continuously driven. Therefore, as shown in FIG. 46 (D), the data signal of the display unit can be rewritten at the timing when the touch sensor detects the proximity or contact of the object to be detected.

Here, if the data signal of the display unit is rewritten during the sensing period of the touch sensor, the noise generated when the data signal is rewritten is transmitted to the touch sensor, which may reduce the sensitivity of the touch sensor. Therefore, it is preferable to drive the data signal of the display unit so as to stagger the rewriting period and the sensing period of the touch sensor.

FIG. 47A shows an example in which the data signal of the display unit is rewritten and the touch sensor is sensed alternately. Further, FIG. 47B shows an example in which the touch sensor is sensed once every time the data signal rewriting operation of the display unit is performed twice. Not limited to this, the touch sensor may be sensed once every time the rewriting operation is performed three or more times.

Further, when an oxide semiconductor is used for the semiconductor layer in which the channel is formed for the transistor applied to the pixel pix, the off-current can be extremely reduced, so that the frequency of data signal rewriting should be sufficiently reduced. Can be done. Specifically, it is possible to provide a sufficiently long pause period between the time when the data signal is rewritten and the time when the data signal is rewritten next time. The rest period can be, for example, 0.5 seconds or longer, 1 second or longer, or 5 seconds or longer. The upper limit of the pause period is limited by the capacitance connected to the transistor and the leak current of the display element or the like, but can be, for example, 1 minute or less, 10 minutes or less, 1 hour or less, or 1 day or less.

FIG. 47C shows an example in which the data signal of the display unit is rewritten once every 5 seconds. In FIG. 47C, the display unit is provided with a pause period for stopping the rewriting operation during the period from the rewriting of the data signal to the next rewriting operation of the data signal. During the pause period, the touch sensor can be driven at a frame frequency of iHz (i is equal to or higher than the frame frequency of the display device, here 0.2 Hz or higher). Further, as shown in FIG. 47 (C), it is preferable to perform the sensing of the touch sensor during the pause period and not during the rewriting period of the data signal of the display unit, because the sensitivity of the touch sensor can be improved. Further, as shown in FIG. 47 (D), if the data signal of the display unit is rewritten and the touch sensor is sensed at the same time, the signal for driving can be simplified.

Further, in the pause period in which the data signal rewriting operation of the display unit is not performed, not only the supply of the data signal to the display unit is stopped, but also the operation of one or both of the gate drive circuit GD and the source drive circuit SD is stopped. You may. Further, the power supply to one or both of the gate drive circuit GD and the source drive circuit SD may be stopped. By doing so, noise can be further reduced and the sensitivity of the touch sensor can be further improved. In addition, the power consumption of the display device can be further reduced.

Further, when the hybrid display described above is used as the display device, the above-mentioned IDS drive mode or partial IDS drive mode and the above-mentioned touch sensor drive method can be combined. Further, when a hybrid display is used, the plurality of display elements can independently perform the IDS drive mode or the partial IDS drive mode. When a hybrid display is used, the following driving methods can be realized.

For example, when the hybrid display has a reflective element and a self-luminous element, the reflective element displays a black-and-white image. After that, the reflective element is put into the IDS drive mode, and the power supply to one or both of the gate drive circuit GD and the source drive circuit SD is stopped. After that, the touch sensor is sensed, and the reflective element in the region where the sensing is not performed is shifted to the partial IDS drive mode. After that, the self-luminous element in the region where the partial IDS drive mode is not performed is made to emit light. After that, the power supply to one or both of the gate drive circuit GD and the source drive circuit SD driving the self-luminous element is stopped, and the self-luminous element shifts to the partial IDS drive mode.

By performing the driving method as described above, it is possible to realize an excellent display device in which the power consumption is reduced and the detection sensitivity of the touch sensor is enhanced.

The display device of one aspect of the present invention has a configuration in which a display unit and a touch sensor are sandwiched between two substrates. Therefore, the distance between the display unit and the touch sensor can be made extremely close. At this time, the noise when the display unit is driven tends to propagate to the touch sensor, and the sensitivity of the touch sensor may decrease. By applying the drive method illustrated in the present embodiment, it is possible to realize a display device having a touch sensor that achieves both thinness and high detection sensitivity.

This embodiment can be appropriately combined with other embodiments.

(Embodiment 5)
In the present embodiment, the metal oxide that can be used for the transistor disclosed in one aspect of the present invention will be described. In particular, the details of metal oxides and CAC (Cloud-Aligned Composite) will be described below.

The CAC-OS or CAC-metal oxide has a conductive function in a part of the material and an insulating function in a part of the material, and has a function as a semiconductor in the whole material. When CAC-OS or CAC-metal oxide is used in the channel formation region of the transistor, the conductive function is the function of flowing electrons (or holes) that become carriers, and the insulating function is the carrier. It is a function that does not allow electrons to flow. By making the conductive function and the insulating function act in a complementary manner, a switching function (on / off function) can be imparted to the CAC-OS or CAC-metal oxide. In CAC-OS or CAC-metal oxide, by separating each function, both functions can be maximized.

Further, CAC-OS or CAC-metal oxide has a conductive region and an insulating region. The conductive region has the above-mentioned conductive function, and the insulating region has the above-mentioned insulating function. Further, in the material, the conductive region and the insulating region may be separated at the nanoparticle level. Further, the conductive region and the insulating region may be unevenly distributed in the material. In addition, the conductive region may be observed with the periphery blurred and connected in a cloud shape.

Further, in CAC-OS or CAC-metal oxide, when the conductive region and the insulating region are dispersed in the material in a size of 0.5 nm or more and 10 nm or less, preferably 0.5 nm or more and 3 nm or less, respectively. There is.

Further, CAC-OS or CAC-metal oxide is composed of components having different band gaps. For example, CAC-OS or CAC-metal oxide is composed of a component having a wide gap due to an insulating region and a component having a narrow gap due to a conductive region. In the case of this configuration, when the carriers flow, the carriers mainly flow in the components having a narrow gap. Further, the component having a narrow gap acts complementarily to the component having a wide gap, and the carrier flows to the component having a wide gap in conjunction with the component having a narrow gap. Therefore, when the CAC-OS or CAC-metal oxide is used in the channel formation region of the transistor, a high current driving force, that is, a large on-current and a high field effect mobility can be obtained in the on-state of the transistor.

That is, the CAC-OS or CAC-metal oxide can also be referred to as a matrix composite or a metal matrix composite.

CAC-OS is, for example, a composition of a material in which elements constituting a metal oxide are unevenly distributed in a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less or a size close thereto. In the following, in the metal oxide, one or more metal elements are unevenly distributed, and the region having the metal element has a size of 0.5 nm or more and 10 nm or less, preferably 1 nm or more and 2 nm or less or its vicinity. The mixed state is also called a mosaic shape or a patch shape.

The metal oxide preferably contains at least indium. In particular, it preferably contains indium and zinc. Also, in addition to them, aluminum, gallium, yttrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lantern, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium, etc. It may contain one or more species selected from.

For example, CAC-OS in In-Ga-Zn oxide (In-Ga-Zn oxide may be particularly referred to as CAC-IGZO in CAC-OS) is indium oxide (hereinafter, InO). _X1 (X1 is a real number larger than 0), or indium zinc oxide (hereinafter, In _X2 Zn _Y2 O _Z2 (X2, Y2, and Z2 are real numbers larger than 0)) and gallium. With oxide (hereinafter, GaO _X3 (X3 is a real number larger than 0)) or gallium zinc oxide (hereinafter, Ga _X4 Zn _Y4 O _Z4 (X4, Y4, and Z4 are real numbers larger than 0)) The material is separated into a mosaic-like structure, and the mosaic-like InO _X1 or In _X2 Zn _Y2 O _Z2 is uniformly distributed in the film (hereinafter, also referred to as cloud-like). be.

That is, CAC-OS is a composite metal oxide having a structure in which a region _{containing GaO X3} as a main component and a region _{containing In X2} Zn _Y2 O _Z2 or InO _{X1 as a main component are mixed.} In the present specification, for example, the atomic number ratio of In to the element M in the first region is larger than the atomic number ratio of In to the element M in the second region. It is assumed that the concentration of In is higher than that of region 2.

In addition, IGZO is a common name, and may refer to one compound consisting of In, Ga, Zn, and O. As a typical example, it is represented by InGaO ₃ (ZnO) _m1 (m1 is a natural number) or In _{(1 + x0)} Ga _(1-x0) O ₃ (ZnO) _m0 (-1 ≦ x0 ≦ 1, m0 is an arbitrary number). Crystalline compounds can be mentioned.

The crystalline compound has a single crystal structure, a polycrystalline structure, or a CAAC (c-axis aligned crystalline) structure. The CAAC structure is a crystal structure in which a plurality of IGZO nanocrystals have a c-axis orientation and are connected without being oriented on the ab plane.

On the other hand, CAC-OS relates to the material composition of metal oxides. CAC-OS is a region that is partially observed as nanoparticles containing Ga as a main component and nanoparticles containing In as a main component in a material composition containing In, Ga, Zn, and O. The regions observed in a shape refer to a configuration in which the regions are randomly dispersed in a mosaic shape. Therefore, in CAC-OS, the crystal structure is a secondary element.

The CAC-OS does not include a laminated structure of two or more types of films having different compositions. For example, it does not include a structure consisting of two layers, a film containing In as a main component and a film containing Ga as a main component.

In some cases, a clear boundary cannot be observed between the region containing GaO _X3 as the main component and the region _{containing In X2} Zn _Y2 O _Z2 or InO _{X1 as the main component.}

Instead of gallium, select from aluminum, ittrium, copper, vanadium, beryllium, boron, silicon, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, or magnesium. When one or more of these are contained, CAC-OS has a region observed in the form of nanoparticles containing the metal element as a main component and a nano having In as a main component. The regions observed in the form of particles refer to a configuration in which the regions are randomly dispersed in a mosaic pattern.

The CAC-OS can be formed by a sputtering method, for example, under the condition that the substrate is not intentionally heated. When CAC-OS is formed by the sputtering method, one or more selected from an inert gas (typically argon), an oxygen gas, and a nitrogen gas may be used as the film forming gas. good. Further, the lower the flow rate ratio of the oxygen gas to the total flow rate of the film-forming gas at the time of film formation is preferable. For example, the flow rate ratio of the oxygen gas is preferably 0% or more and less than 30%, preferably 0% or more and 10% or less. ..

CAC-OS is characterized by the fact that no clear peak is observed when measured using the θ / 2θ scan by the Out-of-plane method, which is one of the X-ray diffraction (XRD) measurement methods. Have. That is, from the X-ray diffraction, it can be seen that the orientation of the measurement region in the ab plane direction and the c-axis direction is not observed.

Further, CAC-OS has a ring-shaped high-luminance region and a plurality of bright regions in the ring region in an electron diffraction pattern obtained by irradiating an electron beam (also referred to as a nanobeam electron beam) having a probe diameter of 1 nm. A point is observed. Therefore, from the electron diffraction pattern, it can be seen that the crystal structure of CAC-OS has an nc (nano-crystal) structure having no orientation in the planar direction and the cross-sectional direction.

Further, for example, in CAC-OS in In-Ga-Zn oxide, a region in which _{GaO X3} is a main component is obtained by EDX mapping acquired by using energy dispersive X-ray spectroscopy (EDX). And, _{it can be confirmed that the region in which In X2} Zn _Y2 O _Z2 or InO _X1 is the main component is unevenly distributed and has a mixed structure.

CAC-OS has a structure different from that of the IGZO compound in which metal elements are uniformly distributed, and has properties different from those of the IGZO compound. That is, the CAC-OS is _{a region in which GaO X3} or the like is the main component and a region in which In _X2 Zn _Y2 O _Z2 or InO _X1 is the main component are phase-separated from each other and each element is the main component. Has a mosaic-like structure.

Here, the _{region in which In X2} Zn _Y2 O _Z2 or InO _X1 is the main component is a region having higher conductivity than the region in which _{GaO X3 or the like is the main component.} That is, _{when the carrier flows through the region where In X2} Zn _Y2 O _Z2 or InO _X1 is the main component, the conductivity as an oxide semiconductor is exhibited. Therefore, a high field effect mobility (μ) can be realized by distributing the region containing _{In X2} Zn _Y2 O _Z2 or InO _{X1 as the main component in the oxide semiconductor in a cloud shape.}

On the other hand, _{the region in which GaO X3} or the like is the main component is a region having higher insulating property than the region in which _{In X2} Zn _Y2 O _Z2 or InO _{X1 is the main component.} That is, since _{the region containing GaO X3} or the like as the main component is distributed in the oxide semiconductor, the leakage current can be suppressed and a good switching operation can be realized.

Therefore, when CAC-OS is used for a semiconductor element, the insulating property caused by _{GaO X3 and the like and the conductivity caused by In X2} Zn _Y2 O _Z2 or InO _X1 act complementarily to be high. On current (I _on ) and high field effect mobility (μ) can be achieved.

Further, the semiconductor element using CAC-OS has high reliability. Therefore, CAC-OS is most suitable for various semiconductor devices such as displays.

This embodiment can be appropriately combined with other embodiments.

(Embodiment 6)
In the present embodiment, the electronic device of one aspect of the present invention will be described.

According to one aspect of the present invention, an electronic device having a flat surface and high reliability can be manufactured. Further, according to one aspect of the present invention, it is possible to manufacture an electronic device having a curved surface and high reliability. Further, according to one aspect of the present invention, a flexible and highly reliable electronic device can be manufactured.

Electronic devices include, for example, television devices, desktop or notebook personal computers, monitors for computers, digital cameras, digital video cameras, digital photo frames, mobile phones, portable game machines, personal digital assistants, and acoustic devices. Examples include a playback device and a large game machine such as a pachinko machine.

Further, the display device of one aspect of the present invention can realize high visibility regardless of the intensity of external light. Therefore, it can be suitably used for portable electronic devices, wearable electronic devices (wearable devices), electronic book terminals, and the like.

The mobile information terminal 800 shown in FIGS. 48 (A) and 48 (B) has a housing 801 and a housing 802, a display unit 803, a hinge unit 805, and the like.

The housing 801 and the housing 802 are connected by a hinge portion 805. The mobile information terminal 800 can be expanded from the folded state (FIG. 48 (A)) as shown in FIG. 48 (B). As a result, it is excellent in portability when it is carried, and it is excellent in visibility due to a large display area when it is used.

The mobile information terminal 800 is provided with a flexible display unit 803 over the housing 801 and the housing 802 connected by the hinge portion 805.

A display device manufactured using one aspect of the present invention can be used for the display unit 803. As a result, a mobile information terminal can be manufactured with a high yield.

The display unit 803 can display at least one of document information, a still image, a moving image, and the like. When displaying document information on the display unit, the mobile information terminal 800 can be used as an electronic book terminal.

When the mobile information terminal 800 is deployed, the display unit 803 is held in a greatly curved shape. For example, the display unit 803 is held including a portion curved with a radius of curvature of 1 mm or more and 50 mm or less, preferably 5 mm or more and 30 mm or less. Pixels are continuously arranged on a part of the display unit 803 from the housing 801 to the housing 802, and a curved surface can be displayed.

The display unit 803 functions as a touch panel and can be operated with a finger, a stylus, or the like.

The display unit 803 is preferably composed of one flexible display. As a result, continuous display without interruption between the housing 801 and the housing 802 can be performed. A display may be provided in each of the housing 801 and the housing 802.

The hinge portion 805 preferably has a locking mechanism so that the angle between the housing 801 and the housing 802 does not become larger than a predetermined angle when the portable information terminal 800 is deployed. For example, the angle at which the lock is applied (does not open any further) is preferably 90 degrees or more and less than 180 degrees, typically 90 degrees, 120 degrees, 135 degrees, 150 degrees, or 175 degrees. be able to. Thereby, the convenience, safety, and reliability of the portable information terminal 800 can be enhanced.

When the hinge portion 805 has a locking mechanism, it is possible to prevent the display portion 803 from being damaged without applying an excessive force to the display portion 803. Therefore, a highly reliable mobile information terminal can be realized.

The housing 801 and the housing 802 may have a power button, an operation button, an external connection port, a speaker, a microphone, and the like.

A wireless communication module is provided in either the housing 801 or the housing 802, and data is transmitted via a computer network such as the Internet, LAN (Local Area Network), or Wi-Fi (Wi-Filess Fidelity: registered trademark). It is possible to send and receive.

The mobile information terminal 810 shown in FIG. 48 (C) has a housing 811, a display unit 812, an operation button 813, an external connection port 814, a speaker 815, a microphone 816, a camera 817, and the like.

A display device manufactured using one aspect of the present invention can be used for the display unit 812. As a result, a mobile information terminal can be manufactured with a high yield.

The mobile information terminal 810 includes a touch sensor on the display unit 812. All operations such as making a phone call or inputting characters can be performed by touching the display unit 812 with a finger or a stylus.

Further, by operating the operation button 813, the power can be turned on and off, and the type of the image displayed on the display unit 812 can be switched. For example, the mail composition screen can be switched to the main menu screen.

Further, by providing a detection device such as a gyro sensor or an acceleration sensor inside the mobile information terminal 810, the orientation (vertical or horizontal) of the mobile information terminal 810 can be determined, and the orientation of the screen display of the display unit 812 can be determined. It can be switched automatically. Further, the orientation of the screen display can be switched by touching the display unit 812, operating the operation button 813, or inputting voice using the microphone 816.

The mobile information terminal 810 has one or more functions selected from, for example, a telephone, a notebook, an information browsing device, and the like. Specifically, it can be used as a smartphone. The personal digital assistant 810 can execute various applications such as mobile phone, e-mail, text viewing and creation, music playback, video playback, Internet communication, and games.

The camera 820 shown in FIG. 48 (D) has a housing 821, a display unit 822, an operation button 823, a shutter button 824, and the like. A removable lens 826 is attached to the camera 820.

A display device manufactured using one aspect of the present invention can be used for the display unit 822. This makes it possible to manufacture a camera with a high yield.

Here, the camera 820 has a configuration in which the lens 826 can be removed from the housing 821 and replaced, but the lens 826 and the housing 821 may be integrated.

The camera 820 can capture a still image or a moving image by pressing the shutter button 824. Further, the display unit 822 has a function as a touch panel, and it is possible to take an image by touching the display unit 822.

The camera 820 can be separately equipped with a strobe device, a viewfinder, and the like. Alternatively, these may be incorporated in the housing 821.

49 (A) to 49 (E) are diagrams showing electronic devices. These electronic devices include a housing 9000, a display unit 9001, a speaker 9003, an operation key 9005 (including a power switch or an operation switch), a connection terminal 9006, and a sensor 9007 (force, displacement, position, speed, acceleration, angular velocity, rotation). Includes the ability to measure numbers, distances, light, liquids, magnetism, temperature, chemicals, voice, time, hardness, electric fields, currents, voltages, power, radiation, flow rates, humidity, gradients, vibrations, odors or infrared rays) , Microphone 9008 and the like.

A display device manufactured by using one aspect of the present invention can be suitably used for the display unit 9001. As a result, an electronic device can be manufactured with a high yield.

The electronic devices shown in FIGS. 49 (A) to 49 (E) can have various functions. For example, a function to display various information (still images, moving images, text images, etc.) on the display unit, a touch panel function, a function to display a calendar, date or time, etc., a function to control processing by various software (programs), Wireless communication function, function to connect to various computer networks using wireless communication function, function to transmit or receive various data using wireless communication function, read and display programs or data recorded on recording media It can have a function of displaying on a unit, and the like. The functions of the electronic devices shown in FIGS. 49 (A) to 49 (E) are not limited to these, and may have other functions.

FIG. 49 (A) is a perspective view showing a wristwatch-type portable information terminal 9200, and FIG. 49 (B) is a perspective view showing a wristwatch-type portable information terminal 9201.

The personal digital assistant 9200 shown in FIG. 49 (A) can execute various applications such as mobile phone, e-mail, text viewing and creation, music playback, Internet communication, and computer games. Further, the display unit 9001 is provided with a curved display surface, and can display along the curved display surface. In addition, the personal digital assistant 9200 can execute short-range wireless communication standardized for communication. For example, by communicating with a headset capable of wireless communication, it is possible to make a hands-free call. Further, the mobile information terminal 9200 has a connection terminal 9006, and can directly exchange data with another information terminal via a connector. It is also possible to charge via the connection terminal 9006. The charging operation may be performed by wireless power supply without going through the connection terminal 9006.

Unlike the mobile information terminal shown in FIG. 49 (A), the mobile information terminal 9201 shown in FIG. 49 (B) does not have a curved display surface of the display unit 9001. Further, the outer shape of the display unit of the mobile information terminal 9201 is non-rectangular (circular in FIG. 49 (B)).

49 (C) to 49 (E) are perspective views showing a foldable mobile information terminal 9202. Note that FIG. 49 (C) is a perspective view of the mobile information terminal 9202 in an unfolded state, and FIG. 49 (D) shows a state in which the mobile information terminal 9202 is in the process of changing from one of the expanded or folded states to the other. 49 (E) is a perspective view of the mobile information terminal 9202 in a folded state.

The mobile information terminal 9202 is excellent in portability in the folded state, and is excellent in display listability due to a wide seamless display area in the unfolded state. The display unit 9001 included in the mobile information terminal 9202 is supported by three housings 9000 connected by a hinge 9055. By bending between the two housings 9000 via the hinge 9055, the portable information terminal 9202 can be reversibly deformed from the unfolded state to the folded state. For example, the portable information terminal 9202 can be bent with a radius of curvature of 1 mm or more and 150 mm or less.

This embodiment can be appropriately combined with other embodiments.

14 Fabrication board 19 Metal layer 20 Metal oxide layer 23 Resin layer 24 First layer 31 Insulation layer 40 Pixel array 45 Pixel unit 46 Pixel 46B Display element 46G Display element 46R Display element 47 Pixel 47B Display element 47G Display element 47R Display element 54 Light 55 Laser light 56 Laminated body 56a Exfoliated body 56b Support 57a First layer 57b Second layer 58 Fabrication substrate 90 Metal oxide layer 90a Metal oxide layer 90b Metal oxide layer 91 Insulation layer 91a Insulation layer 91b Insulation layer 93 Resin layer 93a Resin layer 93b Resin layer 94 Fabrication substrate 94a Fabrication substrate 94b Fabrication substrate 97 Adhesive layer 100 Display device 112 Liquid crystal layer 113 Electrode 113a Electrode 115 Insulation layer 117 Insulation layer 121 Insulation layer 131 Colored layer 132 Light-shielding layer 133a Orientation Film 133b Alignment film 134 Colored layer 135 Plate plate 136 Light diffusion layer 141 Adhesive layer 142 Adhesive layer 170 Light emitting element 180 Liquid crystal element 191 Electrode 192 EL layer 193 Electrode 194 Insulation layer 201 Transistor 203 Transistor 204 Connection part 205 Transistor 206 Transistor 207 Connection part 211 Insulation layer 211a Insulation layer 211b Insulation layer 212 Insulation layer 213 Insulation layer 214 Insulation layer 215 Insulation layer 216 Insulation layer 217 Insulation layer 220 Insulation layer 220a Insulation layer 220b Insulation layer 221a Conductive layer 221b Conductive layer 221c Conductive layer 222a Conductive layer 222b Conductive Layer 223 Conductive layer 224 Conductive layer 225 Insulation layer 226 Coating film 227 Lens 228 Conductive layer 231 Semiconductor layer 232 Insulation layer 233 Diffusion film 234a Conductive layer 234b Conductive layer 234c Insulation layer 234d Insulation layer 235 Substrate 242 Connection layer 242a Connection layer 242b Connection Layer 243 Connection body 252 Connection part 253 Connection part 300A Display device 300B Display device 300C Display device 300D Display device 300E Display device 300F Display device 300G Display device 300H Display device 300J Display device 311 Electrode 311a Electrode 311b Electrode 311c Electrode 311d Electrode 311e Electrode 311f Electrode 311g Electrode 311h Electrode 331 Conductive layer 332 Insulation layer 333 Conductive layer 334 Conductive layer 335 Insulation layer 336 Conductive layer 340 Liquid crystal element 351 Substrate 360 Light emitting element 360b Light emitting element 360g Light emitting element 360r Light emitting element 360w Light emitting element 361 Board 362 Display 364 Circuit 365 Wiring 372 FPC
372a FPC
372b FPC
373 IC
390 Substrate 392 Adhesive layer 396 Anti-reflection member 400 Display device 410 Pixel 451 Opening 501 Display element 502 Display element 506 Pixel circuit 507 Pixel circuit 521 Electrode 522 Electrode 551 Pulse voltage output circuit 552 Current detection circuit 552 Capacity 610 Laser irradiation unit 610a Laser light 610b Laser light 610c Laser light 610d Laser light 610e Linear beam 635 Optical system 640 Processing area 644 Conveying roller 650 Mirror 660 Exima laser device 680 Lens 800 Mobile information terminal 801 Housing 802 Housing 803 Display unit 805 Hinge part 810 Mobile information terminal 811 Housing 812 Display unit 813 Operation button 814 External connection port 815 Speaker 816 Microphone 817 Camera 820 Camera 821 Housing 822 Display unit 823 Operation button 824 Shutter button 286 Lens 9000 Housing 9001 Display unit 9003 Speaker 9005 Operation key 9006 Connection terminal 9007 Sensor 9008 Microphone 9055 Hing 9200 Mobile information terminal 9201 Mobile information terminal 9202 Mobile information terminal

Claims (19)

It is a method of manufacturing a display device having a first display element and a second display element between the first substrate and the second substrate.
A step of forming a common electrode having a function of transmitting visible light on the first substrate, and
The process of forming the first layer on the manufacturing substrate and
A step of forming a second layer on the first layer and
A step of forming a pixel electrode having a function of reflecting visible light on the second layer, and
A step of forming an insulating layer on the pixel electrode and
A step of forming the second display element having a function of emitting visible light on the insulating layer, and
A step of sealing the second display element using the second substrate, and
A step of separating the first layer and the second layer by irradiating with light, and
A step of forming the first display element by laminating the first substrate and the second substrate in a state where a liquid crystal layer is arranged between the common electrode and the pixel electrode. Have and
The first layer comprises one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin.
It said second layer has a polyimide resin or a polyimide resin precursor, a method for manufacturing a Viewing device. In claim 1,
Prior to the step of forming the common electrode, there is a step of forming a functional layer on the first substrate.
A method for manufacturing a display device, wherein the functional layer is formed so as to have one or both of a detection element and a colored layer. It is a method of manufacturing a display device having a first display element and a second display element between the first substrate and the second substrate.
The step of forming the first release layer on the first production substrate and
A step of forming a common electrode having a function of transmitting visible light on the first release layer, and
A step of forming a second release layer on the second production substrate, and
A step of forming a pixel electrode having a function of reflecting visible light on the second peeling layer, and
A step of forming an insulating layer on the pixel electrode and
A step of forming the second display element having a function of emitting visible light on the insulating layer, and
A step of sealing the second display element using the second substrate, and
A step of separating the second production substrate and the second substrate by using the second release layer, and
A step of forming the first display element by laminating the first manufacturing substrate and the second substrate in a state where a liquid crystal layer is arranged between the common electrode and the pixel electrode.
A step of separating the first production substrate and the second substrate by using the first release layer, and
It has a step of bonding the first substrate and the second substrate in a state where the first display element is arranged between the first substrate and the second substrate.
One or both of the first peeling layer and the second peeling layer is formed so as to have a first layer and a second layer on the first layer.
The first layer comprises one or more of titanium, molybdenum, aluminum, tungsten, silicon, indium, zinc, gallium, tantalum, and tin.
The second layer has a polyimide resin or a polyimide resin precursor and has a polyimide resin or a polyimide resin precursor.
Light is irradiated in one or both of the step of separating the second manufacturing substrate and the second substrate and the step of separating the first manufacturing substrate and the second substrate. A method for manufacturing a display device, wherein the first layer and the second layer are separated from each other. In claim 3,
Prior to the step of forming the common electrode, there is a step of forming a first functional layer on the first peeling layer.
A method for manufacturing a display device, wherein the first functional layer is formed so as to have one or both of a detection element and a colored layer. In claim 3 or 4,
The first substrate has a surface on which a second functional layer is provided.
The step of bonding the first substrate and the second substrate is performed in a state where the second functional layer is arranged between the first substrate and the second substrate.
The second functional layer is formed so as to have one or both of the light diffusion layer及beauty polarizing plate, a method for manufacturing a display device. In claim 3,
A step of forming a third release layer on the third production substrate, and
It has a step of forming a functional layer on the third release layer, and further.
Prior to the step of bonding the first substrate and the second substrate, the third release layer is arranged between the third production substrate and the first substrate, and the third release layer is arranged. It has a step of adhering the manufacturing substrate of 3 and the first substrate, and a step of separating the third manufacturing substrate and the first substrate by using the third release layer.
The step of bonding the first substrate and the second substrate is performed in a state where the functional layer is arranged between the first substrate and the second substrate.
A method for manufacturing a display device, wherein the functional layer is formed so as to have one or more of a detection element, a light diffusion layer, and a polarizing plate. In any one of claims 3 to 6,
A method for manufacturing a display device, which uses a glass substrate having a thickness of 0.1 mm or more and less than 0.5 mm as the first substrate. In any one of claims 3 to 6,
A method for manufacturing a display device, which uses a resin substrate having a thickness of 1 μm or more and 200 μm or less as the first substrate. In any one of claims 1 to 8,
A method for manufacturing a display device, wherein an antireflection member is provided on a surface of the first substrate opposite to the surface on the second substrate side. In claim 9.
A method for manufacturing a display device, wherein the antireflection member is provided so as to have a convex portion. In any one of claims 1 to 10,
A method for manufacturing a display device, wherein the liquid crystal layer is provided so as to have a dichroic dye. In any one of claims 1 to 11,
A method for manufacturing a display device, comprising a step of forming a transistor having a metal oxide in a channel forming region on the insulating layer before the step of forming the second display element. In any one of claims 1 to 12,
Fabrication of a display device comprising a step of separating the first layer and the second layer and then removing the second layer remaining on the exposed surface of the laminate including the second substrate. Method. In claim 13,
A method for manufacturing a display device, in which ashing is performed in the step of removing the second layer. In any one of claims 1 to 14,
A method for manufacturing a display device, wherein the second layer is formed so as to have a region having a thickness of 0.1 μm or more and 5 μm or less. In any one of claims 1 to 15,
Laser light is used as the light.
A method for manufacturing a display device, in which the first layer and the second layer are separated by irradiating the interface between the first layer and the second layer or the vicinity thereof with the laser beam. .. In any one of claims 1 to 16,
A method for manufacturing a display device, wherein the first layer is formed so as to have one or both of titanium and titanium oxide. In any one of claims 1 to 17,
A method for producing a display device, wherein the second layer is formed so as to have a residue of a compound represented by the structural formula (100).

In any one of claims 1 to 18,
The second layer is formed so as to have an opening.
A conductive layer is formed so as to cover the opening.
A method for manufacturing a display device, in which the conductive layer is exposed by separating the first layer and the second layer.

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