JP6687008B2 - 発光装置 - Google Patents
発光装置 Download PDFInfo
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- JP6687008B2 JP6687008B2 JP2017230216A JP2017230216A JP6687008B2 JP 6687008 B2 JP6687008 B2 JP 6687008B2 JP 2017230216 A JP2017230216 A JP 2017230216A JP 2017230216 A JP2017230216 A JP 2017230216A JP 6687008 B2 JP6687008 B2 JP 6687008B2
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- 239000000463 material Substances 0.000 claims description 58
- 239000011521 glass Substances 0.000 claims description 6
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 description 8
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 6
- 239000000428 dust Substances 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000007769 metal material Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 229910015363 Au—Sn Inorganic materials 0.000 description 1
- 229910001030 Iron–nickel alloy Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 239000003779 heat-resistant material Substances 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910000833 kovar Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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Description
図1に本実施形態に係る発光装置200の斜視図を示し、図2に発光装置200の上面図を示し、図3に図2のIII−IIIにおける断面図を示し、図4に図3の破線枠内の拡大図を示し、図5に図2のV−Vにおける断面図を示す。
基体10は、本体部11と、本体部11の上面に設けられた枠部12と、を有する。
基体10の本体部11の上面には、1以上のレーザ素子20が配置されている。2以上のレーザ素子20が本体部11の上面に配置されていることが好ましく、ここでは、14個のレーザ素子20が配置されている。レーザ素子20の数が多くなるほどレーザ素子20全体で発生する熱量が多くなり、本体部11が反りやすくなるため、本実施形態による透光部32の破損を低減する効果が顕著となる。X方向におけるレーザ素子20の数は、Y方向におけるレーザ素子20の数よりも多いことが好ましい。Y方向におけるレーザ光の広がりに比べてX方向におけるレーザ光の広がりが狭いため、本体部11を大きくすることなく本体部11に配置できるレーザ素子20の数を増やすことができるためである。また、本体部11の大きさを大きくする必要がないため、本体部11が反りやすくなることを抑制できる。
枠部12の上面には、蓋体30が固定されている。蓋体30は、上方から視て枠部12の内側で開口した支持部31と、開口を塞ぐ透光部32と、を有する。蓋体30に関する以下の説明では、「平行」とは基準面に対して完全に平行なものだけではなく、10度以下で傾くものも含まれる。また、「垂直」とは基準面に対して完全に垂直なものだけではなく、10度以下で傾くものも含まれる。
レンズ体40は、透光部32から上方に離間して配置され、レーザ素子20からの光の配光を制御する。レンズ体40は、支持部31の第1部位31aの内縁よりも内側に固定されている。これにより、第1部位31aの上面に他の部材を固定しやすくなる。例えば、図6及び図7に示すように、レンズ体40への集塵を低減するために、第1部位31aの上面に筒状の導光部材100を固定し、導光部材100の端部を蓋110で覆うことができる。つまり、導光部材100の一端と第1部位31aとが固定され、導光部材100の他端と蓋110とが固定されている。これにより、比較的大きな塵等がレンズ体40に付着することを低減することができる。支持部31と導光部材100と蓋110とにより構成される空間は、気密封止された空間とすることが好ましい。これにより、レンズ体40が配置される空間に比較的小さな塵が侵入することを抑制することができるため、発光装置200の信頼性を向上させることができる。
11…本体部
12…枠部
13…リードピン
20…レーザ素子
30…蓋体
31…支持部
31a…第1部位
31b…第2部位
31c…第3部位
31d…第4部位
31e…第5部位
31f…第6部位
31g…第7部位
32…透光部
33…第1接合材
40…レンズ体
41…レンズ部
42…非レンズ部
50…第2接合材
60…ワイヤ
70、80…サブマウント
90…光反射体
100…導光部材
110…蓋
200…発光装置
Claims (7)
- 本体部と、前記本体部の上面に設けられた枠部と、を有する基体と、
前記枠部の内側であって前記本体部の上面に設けられた1以上のレーザ素子と、
前記枠部の上面に固定され且つ前記枠部の内側に開口が設けられた支持部と、前記開口を塞ぐように設けられた透光部と、を有する蓋体と、
前記透光部の上方に配置されるレンズ体と、を備える発光装置であって、
前記支持部は、
前記枠部の上面に固定される第1部位と、
前記第1部位の内側において前記第1部位よりも低い位置に設けられた、前記レンズ体が配置される第2部位と、
前記第2部位の内側において前記第2部位よりも低い位置に設けられた、前記透光部が配置される第3部位と、を有し、
前記透光部と前記レンズ体との熱膨張係数差は、前記透光部と前記本体部との熱膨張係数差よりも小さいことを特徴とする発光装置。 - 前記支持部は、上方から視て前記第2部位と前記第3部位との間に、前記第2部位よりも低い位置で且つ前記第3部位よりも高い位置に設けられた第4部位を有していることを特徴とする請求項1に記載の発光装置。
- 前記支持部は、前記枠部から内側に離間した位置において、前記第1部位と前記第2部位とを繋ぐ第5部位を有し、
前記第5部位は、前記第2部位よりも低い位置で下に凸となるように屈曲していることを特徴とする請求項1又は請求項2に記載の発光装置。 - 前記本体部の上面には、前記1以上のレーザ素子として2以上のレーザ素子が配置されていることを特徴とする請求項1〜3のいずれか1項に記載の発光装置。
- 前記透光部は、第1接合材で前記支持部に固定されており、
前記レンズ体は、前記第1接合材よりもヤング率が小さい第2接合材で前記支持部に固定されていることを特徴とする請求項1〜4のいずれか1項に記載の発光装置。 - 前記第1接合材はガラスであり、
前記第2接合材は樹脂であることを特徴とする請求項5に記載の発光装置。 - 前記蓋体における前記第1部位の上面に、その一端が固定された筒状の導光部材と、
前記導光部材の他端を覆うように固定された蓋と、を備えることを特徴とする請求項1〜6のいずれか1項に記載の発光装置。
Priority Applications (5)
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JP2017230216A JP6687008B2 (ja) | 2017-11-30 | 2017-11-30 | 発光装置 |
US16/203,477 US10608406B2 (en) | 2017-11-30 | 2018-11-28 | Light emitting device |
US16/794,476 US10965097B2 (en) | 2017-11-30 | 2020-02-19 | Light emitting device |
JP2020050785A JP6897830B2 (ja) | 2017-11-30 | 2020-03-23 | 発光装置 |
US17/169,224 US11367994B2 (en) | 2017-11-30 | 2021-02-05 | Light emitting device |
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CN114122902B (zh) * | 2020-08-27 | 2024-10-11 | 青岛海信激光显示股份有限公司 | 激光器 |
JP7008122B1 (ja) | 2020-12-22 | 2022-01-25 | 日機装株式会社 | 光半導体装置および光半導体装置の製造方法 |
JP2022188901A (ja) * | 2021-06-10 | 2022-12-22 | ヌヴォトンテクノロジージャパン株式会社 | 光源装置 |
JP7417121B2 (ja) * | 2021-10-29 | 2024-01-18 | 日亜化学工業株式会社 | 発光装置 |
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Publication number | Publication date |
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JP2019102582A (ja) | 2019-06-24 |
US20200185881A1 (en) | 2020-06-11 |
US11367994B2 (en) | 2022-06-21 |
US10965097B2 (en) | 2021-03-30 |
US20190165542A1 (en) | 2019-05-30 |
US20210159665A1 (en) | 2021-05-27 |
US10608406B2 (en) | 2020-03-31 |
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