JP6661964B2 - Light emitting device - Google Patents

Description

  The present invention relates to a light emitting device.

  2. Description of the Related Art In general, light emitting elements such as light emitting diodes (LEDs) and laser diodes (LDs) are widely used for various light sources used for backlights, lighting, traffic lights, large displays, and the like. In recent years, the output has been increased, and application to automotive headlights has also been advanced.

  Conventionally, in applications where high output is required, a light-emitting element having a plurality of semiconductor structures separated from a semiconductor laminate formed on a substrate is arranged, and a light-reflective resin is interposed between the plurality of semiconductor structures. By providing the light emitting device, a light emitting device with high output and suppressed luminance unevenness has been proposed (for example, see Patent Document 1).

JP 2011-134829 A

  However, in recent years, it has been required to further reduce the uneven brightness on the light extraction surface of the light emitting device, and there is room for further improvement in the uneven brightness in the conventional light emitting device.

  Therefore, an object of the present invention is to provide a light emitting device capable of improving luminance unevenness as compared with the related art.

The above problem is solved by the following means. The light emitting device includes a mounting board, a plurality of light emitting elements arranged on the mounting board with a space therebetween in a first direction, and a light extraction surface side of the plurality of light emitting elements, wherein the plurality of light emitting elements The light-emitting device includes a plate-shaped wavelength conversion member that covers the top and between the plurality of light-emitting elements, and a light-reflective resin that covers the periphery of the plurality of light-emitting elements and a side surface of the wavelength conversion member. The plurality of light-emitting elements are provided on a light- transmitting substrate, an n-type semiconductor layer provided on the light- transmitting substrate, and a part of the n-type semiconductor layer in this order from the light extraction surface side. An active layer, and a p-type semiconductor layer provided on the active layer, and an n-side electrode is provided on at least both end regions of the n-type semiconductor layer in a second direction orthogonal to the first direction. A p-side electrode is provided on the p-type semiconductor layer, and both side surfaces of the wavelength conversion member in the second direction are substantially on the same plane as both side surfaces of the active layer or the active layer. The light-reflective resin is configured to cover a side surface of the wavelength conversion member above an upper surface of the light-transmitting substrate .

  According to the light emitting device described above, it is possible to provide a light emitting device in which luminance unevenness on a light extraction surface of the light emitting device is further improved.

1A is a schematic plan view showing the light emitting device according to the first embodiment, FIG. 1B is a schematic sectional view taken along line IB-IB in FIG. 1A, and FIG. 1C is a schematic sectional view taken along line IC-IC in FIG. 1A. FIG. 2 is a schematic plan view showing the arrangement of the light emitting elements according to the first embodiment. FIG. 3A is a schematic plan view illustrating the light emitting device according to Embodiment 1, and FIG. 3B is a schematic cross-sectional view taken along line IIIB-IIIB of FIG. 3A. FIG. 4 is a schematic plan view showing a light emitting device according to the second embodiment. FIG. 5A is a schematic plan view showing a light emitting element according to Embodiment 3, and FIG. 5B is a schematic sectional view of a light emitting device on which the light emitting element shown in FIG. 5A is mounted. FIG. 6 is a schematic plan view showing a light emitting device according to a modification. FIG. 7A is a schematic plan view showing a light emitting device according to Embodiment 4, and FIG. 7B is a schematic sectional view taken along line BB of FIG. 7A.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light emitting element / device described below is for embodying the technical idea of the present invention, and the present invention is not limited to the following. In particular, the dimensions, materials, shapes, relative arrangements, and the like of the components described below are not intended to limit the scope of the present invention thereto, unless otherwise specified, and are merely illustrative examples. Only. In addition, the size, positional relationship, and the like of the members shown in each drawing may be exaggerated for clarity of description. Further, each element constituting the present invention may be configured such that a plurality of elements are formed of the same member and one member also serves as the plurality of elements, or conversely, the function of one member may be performed by a plurality of members. It can be realized by sharing. Similarly, the embodiments described below can also be applied by appropriately combining the configurations and the like unless otherwise specified.

Further, in the light emitting element / device according to each embodiment of the present invention, “up,” “down,” “left,” “right,” and the like are switched according to the situation. In this specification, "up", "down", and the like indicate relative positions between components in the drawings referred to for explanation, and indicate absolute positions unless otherwise specified. Not intended.
[Embodiment 1]

  1A to 3B show a light emitting device 100 according to Embodiment 1 of the present invention. 1A is a schematic plan view, FIG. 1B is a schematic sectional view taken along line IB-IB of FIG. 1A, FIG. 1C is a schematic sectional view taken along line IC-IC of FIG. 1A, and FIG. FIG. 3A is a schematic plan view of a plurality of light emitting elements 10 arranged in one direction X, FIG. 3A is a schematic plan view of the light emitting elements 10, and FIG. 3B is a schematic cross-sectional view taken along line IIIB-IIIB. As shown in FIGS. 1A to 3B, the light emitting device 100 according to the first embodiment includes a mounting board 50 and a plurality of light emitting elements 10 arranged on the mounting board 50 with a space therebetween in the first direction X. A wavelength conversion member 20 on the light extraction surface 21 side of the plurality of light emitting elements 10 and covering the plurality of light emitting elements 10 and between the plurality of light emitting elements 10; A light-reflective resin 30 that covers the side surface. The plurality of light-emitting elements 10 are arranged in this order from the light extraction surface 21 side, the n-type semiconductor layer 2, the active layer 3 provided on a part of the n-type semiconductor layer 2, and the p-type layer provided on the active layer 3. An n-side electrode 5 is provided on at least both end regions A1 of the n-type semiconductor layer 2 in a second direction Y orthogonal to the first direction X; Are provided, and in the second direction Y, both side surfaces of the wavelength conversion member 20 are located on substantially the same plane as both side surfaces of the active layer 3 or outside the both side surfaces of the active layer 3 respectively. Light emitting device 100. According to the light emitting device 100 according to the first embodiment, as shown in FIG. 2 and the like, the n-side electrode 5 is mainly disposed at both ends in the second direction Y of the light-emitting device 100, so that the light generated by the n-side electrode 5 It is possible to provide the light emitting device 100 in which absorption of light can be suppressed and luminance unevenness on the light extraction surface of the light emitting device is improved. The details will be described below.

The light emitting device 100 shown in FIGS. 1A to 3B mainly includes a plurality of light emitting elements 10 each having a semiconductor laminate on a light transmitting substrate 1, a wavelength conversion member 20 that transmits light from the light emitting elements 10, and a light emitting element. And a light-reflective resin 30 that covers a part of the wavelength conversion member 20 and the periphery of the light-reflection resin 10. As shown in FIGS. 1B and 1C, the wavelength conversion member 20 has a light extraction surface 21, a light receiving surface 22 facing the light extraction surface 21, and a side surface 23. The plurality of light emitting elements 10 are arranged on the mounting substrate 50 in the first direction X, and are arranged such that the upper surface of the translucent substrate 1 faces the light receiving surface 22 of the wavelength conversion member 20 as shown in FIG. Down has been implemented. The wavelength conversion member 20 is joined to the light-transmitting substrate 1 of the light-emitting element 10 by the adhesive member 40 and is provided so as to straddle the plurality of light-emitting elements 10, and covers the plurality of light-emitting elements 10 and between the light-emitting elements 10. ing. Since the periphery of the plurality of light emitting elements 10 arranged on the mounting substrate 50 and the side surface 23 of the wavelength conversion member are covered with the light-reflective resin 30, the region where light is extracted from the light emitting device 100 is substantially The upper surface of the wavelength conversion member 20, that is, the light extraction surface 21 is limited.
(Light emitting element 10)

  As shown in FIGS. 1A and 2, a plurality of light emitting elements 10 according to the first embodiment are arranged in a first direction X on a mounting substrate 50 in a light emitting device 100. The light-emitting element 10 is formed in a rectangular shape as shown in FIGS. 3A and 3B, and is provided on the light-transmitting substrate 1, the semiconductor laminate, and the n-type semiconductor layer 2 forming the semiconductor laminate. An n-side electrode 5 and a p-side electrode 6 provided on the p-type semiconductor layer 4. In the light emitting device 10 according to the first embodiment, an n-type semiconductor layer 2, an active layer 3, and a p-type semiconductor layer 4 are formed on a translucent substrate 1. The n-side electrode 5 and the p-side electrode 6 are provided on one surface side of the light emitting element 10 and have a structure suitable for face-down mounting.

The translucent substrate 1 is a substrate for epitaxially growing a semiconductor layer. For example, when the semiconductor layer is formed using a nitride semiconductor such as gallium nitride, any one of the C plane, the R plane, and the A plane is used. An insulating substrate such as sapphire or spinel (MgAl ₂ O ₄ ) as a main surface, or lithium niobate or neodymium gallate lattice-bonded to SiC, ZnS, ZnO, Si, GaAs, diamond, or nitride semiconductor. Oxide substrates. When a nitride semiconductor is used as the semiconductor layer, for example, MOCVD (metal organic chemical vapor deposition), HVPE (hydride vapor phase epitaxy) may be formed on the transparent substrate 1 suitable for crystal growth of the semiconductor layer. ), MBE (molecular beam epitaxy) or the like.

  On the lower surface of the light-transmitting substrate 1, an n-type semiconductor layer 2, an active layer 3 provided on a part of the n-type semiconductor layer 2, and an active layer 3 are arranged in this order from the light extraction surface 21 side of the wavelength conversion member 20. And the p-type semiconductor layer 4 provided on the substrate. In other words, the n-type semiconductor layer 2, the active layer 3, and the p-type semiconductor layer 4 are sequentially laminated on one main surface of the translucent substrate 1.

  As shown in FIGS. 3A and 3B, in the light emitting device 10, a region where the p-type semiconductor layer 4 and the active layer 3 do not partially exist, that is, the n-type semiconductor layer 2 is recessed from the upper surface of the p-type semiconductor layer 4. An exposed portion 2A that is exposed is formed. In the first embodiment, as shown in FIG. 3A, the exposed portion 2A includes both end regions A1 located at both ends (up and down in FIG. 3A) of the light emitting element 10 in the second direction Y, and a p-side electrode on the light emitting element 10. 3A and an outer peripheral area A2 located on the left and right of the p-side electrode 6 in FIG. 3A. In the first embodiment, the hatched region in FIG. 3A corresponds to the exposed portion 2A. As shown in FIG. 3B, both end regions A1 are regions located outside the side surface of the p-type semiconductor layer 4 of the light emitting element 10 or the side surface 3a of the active layer in the second direction Y. The n-side electrode 5 is mainly provided on both end regions A1, and the n-side electrode 5 is not provided in the outer peripheral region A2. By providing the n-side electrode 5 not on the outer peripheral area A2 but on both end areas A1, when the plurality of semiconductor light emitting elements 10 are arranged in the first direction X to form the light emitting device 100, as shown in FIG. As a result of eliminating light absorption by the n-side electrode between the elements, it is possible to improve the luminance unevenness of the light extraction surface 21 in the first direction X. Here, the outer peripheral region A2 is a part of a boundary region (dicing street) which is a region along a boundary line that individually partitions the light emitting elements 10 in a wafer state, and has a width in the first direction X of, for example, 5. It can be about 0 to 50 μm. Further, as shown in FIG. 3A, a hole A4 may be provided as an exposed portion also in the light extraction surface of the light emitting element 10, and an n-side electrode 5B may be provided on the bottom surface of the hole A4. In the completed light emitting device 10, the exposed portion 2A is covered with a protective film for protecting the n-side electrode 5 or the light emitting device 10, but is referred to as an "exposed portion" for convenience. 2 and 3A show a state in which the light is transmitted through a wavelength conversion member and a light-transmitting substrate for explanation.

  As shown in FIG. 1C, the plurality of light emitting elements 10 are arranged at intervals in the first direction X. In the plurality of light emitting elements 10 arranged in the first direction X, it is preferable that the side surfaces 3a of the active layers of the adjacent light emitting elements 10 are adjacent to each other. Thereby, it is possible to reduce a decrease in luminance between the arranged semiconductor light emitting elements 10, and it is possible to improve luminance unevenness of the light extraction surface 21 in the first direction X in the light emitting device 100. For example, when the side surfaces 3a of the active layer of the light emitting element 10 are adjacent to each other in the first direction X, the distance between the side surfaces 3a of the active layer of each light emitting element 10 including the outer peripheral region A2 is 0.01 to 0.5 μm. It is preferably about 0.05 to 0.2 μm, and more preferably about 0.05 to 0.2 μm.

For the n-type semiconductor layer 2, the active layer 3, and the p-type semiconductor layer 4, a semiconductor such as In _x Al _Y Ga _{1 -XYN} (0 ≦ X, 0 ≦ Y, X + Y <1) is preferably used. Each of these semiconductor layers may have a single-layer structure, or may have a stacked structure of layers having different compositions and film thicknesses, a superlattice structure, or the like. In particular, it is preferable that the active layer 3 has a single quantum well or multiple quantum well structure in which thin films in which a quantum effect occurs are stacked.

  In the light emitting element 10, the surfaces of the n-type semiconductor layer 2, the active layer 3, and the p-type semiconductor layer 4, except for the surfaces of the n-side electrode 5 and the p-side electrode 6 on which the conductive adhesive 60 described later is provided, It is preferable to be covered with a protective film having a light transmitting property and an insulating property.

  The n-side electrode 5 and the p-side electrode 6 are electrodes for supplying a current to the light emitting element 10 from the outside. As shown in FIG. 3, the n-side electrode 5 is provided on both end regions A1 of the light emitting element 10 and is electrically connected to the n-type semiconductor layer 2. By doing so, the current density in the light emitting region of the light emitting element 10 can be made uniform, and the uneven brightness of the light emitting element 10 can be improved. Further, since the area where the n-side electrode 5 is arranged can be enlarged, the forward voltage Vf can be reduced. The p-side electrode 6 is provided on the p-type semiconductor layer 4 and is electrically connected to the p-type semiconductor layer 4. Further, as shown in FIG. 3A, the n-side electrode 5B may be provided on the n-type semiconductor layer 2 exposed in the hole A4.

The n-side electrode 5 and the p-side electrode 6 can be formed from a metal material such as a simple metal such as Ti, Pt, Au, Rh, W, and Ni, and an alloy thereof. As the configuration of the electrode, a single layer or a stacked layer of these metal materials can be used.
(Wavelength conversion member 20)

  The wavelength conversion member 20 has a wavelength conversion material capable of wavelength conversion of at least a part of light emitted by the light emitting element 10. The wavelength conversion member 20 can contain phosphor particles as a wavelength conversion material. For example, when light from the light emitting element 10 excites a phosphor as a wavelength conversion material in the wavelength conversion member 20, light having a wavelength different from the light from the light emitting element 10 is obtained. The emitted light having a desired hue can be obtained by mixing colors of light from the phosphor and light obtained by exciting the phosphor. Further, in the wavelength conversion member 20 of the first embodiment, the upper surface serving as the light extraction surface 21 is exposed in plan view, and the lower surface facing the upper surface becomes the light receiving surface 22 and the upper surface side of the light transmitting substrate 1 and the adhesive member. 40 are joined. Further, the side surface of the wavelength conversion member 20 is covered with a light reflective resin 30 described later.

  In the first embodiment, as shown in FIG. 1B, both side surfaces 23 of the wavelength conversion member 20 in the second direction Y are located on substantially the same plane as both side surfaces 3 a of the active layer 3. In this embodiment, the light receiving surface 22 of the wavelength conversion member 20 is provided to be larger than that in a case where both side surfaces 23 of the wavelength conversion member 20 are located inside the both side surfaces 3a of the respective active layers 3. Can be. As a result, light from the active layer 3 can be easily taken out, so that luminous efficiency can be improved. In addition, both sides 23 of the wavelength conversion member 20 in the second direction Y may be located outside the both sides 3a of the active layer 3, respectively. With this mode, the area of the light extraction surface 21 of the wavelength conversion member 20 can be increased, so that the luminous efficiency of the light emitting device 100 can be further improved. Furthermore, the side surface 23 of the wavelength conversion member 20 is preferably located between the side surface 3a of the active layer 3 and the inner side surface 5a of the n-side electrode 5 in the second direction Y. Thereby, the light that has entered the wavelength conversion member 20 and whose wavelength has been converted returns to the mounting substrate 50 side again, and the light absorbed by the n-side electrode 5 can be reduced, so that the color unevenness of the light emitting device 100 is improved. can do. Here, the inner side surface 5a of the n-side electrode 5 is a side surface facing the side surface 3a of the active layer 3 in the second direction Y.

As a base material of the wavelength conversion member 20, for example, glass, ceramic, resin, or the like can be used, and a material containing a phosphor in the base material can be suitably used. For example, a glass body containing a phosphor in glass, a ceramic body containing a phosphor in ceramic, and the like are preferable from the viewpoint of reliability. The base material of the wavelength conversion member 20 may contain a light scattering agent in addition to the phosphor. The light scattering agent is at least one oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si, or at least one of AlN and MgF. Specifically, TiO ₂ , ZrO ₂ , Nb It is at least one selected from the group consisting of ₂ O ₅ , Al ₂ O ₃ , MgF, AlN, and SiO ₂ . By making the particles of the light scattering agent one kind of oxide selected from the group consisting of Ti, Zr, Nb, and Al, the light scattering agent has high reflectivity and low absorptivity, and is a base material of the wavelength conversion member 20. Is preferable because the difference in the refractive index between them can be increased.

  The shape of the wavelength conversion member 20 is not particularly limited, and may be, for example, a plate shape. On the other hand, not limited to the plate shape, various shapes or forms such as a form having a curved surface as a whole or a part, a planar form such as an uneven surface, for example, a shape for condensing and dispersing, for example, a lens shape or the like Such an optical shape can also be adopted.

  The thickness of the wavelength conversion member 20 can be determined according to the content of the phosphor, the desired color tone of the light emitted from the light emitting element 10 and the color mixture of the light after the wavelength conversion, and the like. It is preferably about 500 μm, and more preferably about 50 to 300 μm.

The phosphor contained in the wavelength conversion member 20 is preferably a phosphor that can emit white light by suitably combining with the light emitting element 10 that emits blue light. For example, a YAG-based phosphor (yttrium-aluminum-garnet) and a LAG-based phosphor (lutetium-aluminum-garnet) bound with cerium having a garnet structure can be used alone or in combination.
(Light reflective resin 30)

  The light-reflective resin 30 is a resin provided to mainly reflect light from the light-emitting element 10 or light whose wavelength has been converted by the wavelength conversion member 20, and contains a light scattering member in a resin serving as a base material. ing. As shown in FIGS. 1A to 1C, the light reflective resin 30 of the first embodiment continuously covers the periphery of the light emitting element 10 and the side surface 23 of the wavelength conversion member 20. The upper surface of the member 20 is formed so as to be exposed. Thereby, the surface from which the light from the light emitting element 10 is extracted can be substantially limited to only the upper surface (the light extraction surface 21) of the wavelength conversion member 20. At this time, in the light source section including the wavelength conversion member 20 and the light emitting element 10, it is preferable that a portion other than the light extraction surface 21 of the wavelength conversion member 20 is covered with the light reflective resin 30. In addition, by covering the side surface of the wavelength conversion member 20 with the light-reflective resin 30, it is possible to prevent the light from leaking from the side surface 23 of the wavelength conversion member 20 and to improve the parting of the light emitting device 100. .

  Further, it is preferable that the light-reflective resin 30 covers both end regions A1 where the n-side electrode 5 is provided. Thereby, the light reflected by the light receiving surface 22 of the wavelength conversion member 20 and the light reflective resin 30 and returned to the mounting substrate 50 side is reflected toward the light extraction surface 21 side, and the luminous efficiency of the light emitting device 100 is improved. Can be improved. Furthermore, it is preferable that the side surfaces of the light emitting element 10, specifically, the side surfaces of the light-transmitting substrate 1 and the n-type semiconductor layer 2 are covered with the light-reflective resin 30. In this way, light leaking from the side surface of the light emitting element 10 can be suppressed. Further, as shown in FIG. 1B, FIG. 1C, etc., a structure in which the exposed surface of the light-reflective resin 30 is depressed from the light-extraction surface 21 of the wavelength conversion member 20 may be employed, so that light shielding by the light-reflective resin 30 can be prevented. it can. Further, the light extraction surface 21 and the exposed surface of the light reflective resin 30 may be substantially the same.

  As a base material of the light-reflective resin 30, a light-transmitting resin material is preferable, and for example, a silicone resin composition, a modified silicone resin composition, or the like can be used. In the first embodiment, a silicone resin is used as a resin material from the viewpoint of heat resistance and weather resistance. By using a resin material, a desired shape can be formed and a desired region can be easily covered. Further, the exposed surface on the light extraction surface 21 side of the light-reflective resin 30 can have a desired shape, and can have a concave or convex curved surface in addition to a flat surface.

In addition, as the light scattering member contained in the base material of the light-reflective resin 30, it is preferable to use low-absorbing particles. For example, it is one kind of oxide selected from the group consisting of Ti, Zr, Nb, Al, and Si, or at least one kind of AlN and MgF, specifically, TiO ₂ , ZrO ₂ , Nb ₂ O ₅ , It is at least one selected from the group consisting of Al ₂ O ₃ , MgF, AlN, and SiO ₂ . By using these light-scattering members, the light-reflective resin 30 having high reflectivity and low absorptivity can be obtained, so that light absorption and light loss can be reduced. In the first embodiment, TiO ₂ is used as a light scattering member from the viewpoint of light reflectivity and light absorbency.

Since the light-reflective resin 30 has a different depth at which light leaks depending on the concentration and density of the light-scattering member, the concentration and density may be appropriately adjusted according to the shape and size of the light-emitting device 100. For example, when the thickness of the light-reflective resin 30 is reduced by using a relatively small light-emitting device 100, it is preferable to use the light-reflective resin 30 containing a high-concentration light scattering member. Particularly, in plan view, the concentration and thickness of the light-scattering member of the light-reflective resin 30 provided on the upper surface side of the light-transmitting substrate 1 greatly affect the improvement of the light-emitting device 100, and thus, for example, light It is preferable that the concentration of the scattering member is about 20 to 50 wt% and the thickness is about 100 to 300 μm. By doing so, it is possible to improve the quality of the light-emitting device 100 and to obtain emitted light with high luminance and high directivity from the light extraction surface 21 of the light-emitting device 100. Also, by forming the light-reflective resin 30 having an appropriate viscosity, formation of an underfill or the like can be easily performed. Further, if the concentration of the light scattering member is increased, the heat diffusivity of the light reflective resin 30 can be increased.
(Adhesive member 40)

  The adhesive member 40 is used as an adhesive interposed between the light emitting element 10 and the wavelength conversion member 20 to fix both members. It is preferable that the adhesive member 40 has a light-transmitting property, and is made of a material that can guide light emitted from the light emitting element 10 toward the wavelength conversion member 20 and that can optically couple both members. As the material, a translucent thermosetting resin such as a silicone resin or an epoxy resin is preferable, and a silicone resin is particularly preferable because of its excellent heat resistance and light resistance. In the first embodiment, a silicone resin is used as the adhesive member 40.

The bonding member 40 may be disposed outside the wavelength conversion member 20 in a plan view. For example, as illustrated in FIG. 1B, the bonding member 40 covers the surface of the light-transmitting substrate 1 and the side surface 23 of the wavelength conversion member. The adhesive member 40 having the inclined surface can be arranged. In this way, the light from the light emitting element 10 can be efficiently guided to the light receiving surface 22 of the wavelength conversion member 20 and the light reflected by the light reflective resin 30 and returned to the mounting substrate 50 can be reduced. As a result, light absorption by the n-side electrode 5 can be suppressed, so that luminous efficiency can be improved.
(Mounting board 50)

In the light emitting device 100 of FIG. 1, the mounting substrate 50 on which the light emitting element 10 is mounted can be one having a wiring 51 formed on at least the upper surface thereof to be electrically connected to the electrode of the light emitting element 10. As a material of the mounting substrate 50, for example, aluminum nitride, ceramic such as alumina, or the like can be preferably used because of high heat dissipation. Further, as shown in FIGS. 1B and 1C, the light emitting element 10 is adhered on the wiring 51 by a conductive adhesive 60 and is electrically connected to the outside. Au bump, solder, Ag paste, or the like can be used for the conductive adhesive 60. In the first embodiment, an Au bump is used as the conductive adhesive 60.
(Manufacturing method of light emitting device 100)

An example of a method for manufacturing the light emitting device 100 shown in FIG. 1 will be described below. First, an Au bump which is a conductive adhesive material 60 is formed on the wiring 51 of the mounting substrate 50 or on the light emitting element 10, and the plurality of light emitting elements 10 are flip-chip mounted on the mounting substrate 50. After that, the wavelength conversion member 20 is bonded to the upper surface of the translucent substrate 1 of the plurality of light emitting elements 10 via the adhesive member 40. At this time, the wavelength conversion member 20 is arranged so as to straddle the plurality of light emitting elements 10. Thereafter, a resin that functions as an underfill is poured between the light emitting element 10 and the mounting substrate 50, and the resin is cured. Here, the resin used as the underfill has a lower viscosity than the light reflective resin 30. Thereafter, the light-reflective resin 30 is formed in a frame shape so as to surround the mounted light-emitting elements 10, and is temporarily cured once. After that, the light-reflective resin 30 is poured between the light-emitting element 10 and the frame-shaped light-reflective resin 30 to be cured. By doing so, the light emitting device 100 according to Embodiment 1 of the present invention can be manufactured with high productivity.
[Embodiment 2]

  Next, a light emitting device according to Embodiment 2 of the present invention is shown in a schematic plan view of FIG. In the light emitting device according to the second embodiment, the configuration except for the structure of the light emitting element 10 shown in FIG. 4 is substantially the same as that of the first embodiment, and the same components are denoted by the same reference numerals as appropriate. Description is omitted.

As shown in FIG. 4, among the light emitting elements 10 arranged in the first direction X, the light emitting elements 10B located at both ends are the ends of the wavelength conversion member 20 (shown by broken lines in FIG. 4) in the first direction X. It has an extension area A3 extending in the first direction X from the edge. The extension region A3 is one of the exposed portions 2A where the n-type semiconductor layer 2 is exposed, and is formed continuously from the n-type semiconductor layer 2 of the light emitting element 10B located at the end. Most of the extension region A3 is located outside the light extraction surface of the wavelength conversion member 20 in plan view. Therefore, by providing the n-side electrode 5C on the extension region A3, the electrode region can be increased without deteriorating luminance unevenness, and the forward voltage Vf of the light emitting device 100 can be reduced.
[Embodiment 3]

  5A and 5B show a light emitting device according to Embodiment 3 of the present invention. 5A is a plan view of the light emitting element 10, and FIG. 5B is a schematic sectional view of a light emitting device on which the light emitting element 10 shown in FIG. 5A is mounted. Note that FIG. 5B shows a schematic cross section of the light-emitting element along the line AA in FIG. 5A. In the light emitting device according to the third embodiment, the configuration other than the structure of the light emitting element 10 shown in FIGS. 5A and 5B is substantially the same as that of the first embodiment. The description will be omitted as appropriate. 5A and 5B, the hatched area corresponds to the exposed portion 2A '.

  As shown in FIG. 5B, in the second direction Y, a light-transmitting substrate 1 extending from both end regions A1 ′ is provided on the n-type semiconductor layer 2 and straddles the light-transmitting substrate 1 and both end regions A1 ′. N-side electrode 5D is provided as described above. That is, the n-side electrode 5D is provided continuously from the lower surface of the translucent substrate 1 to the both end regions A1 from the side surface of the n-type semiconductor layer 2. By doing so, the distance between the side surface 3a of the active layer 3 and the conductive adhesive 60B can be increased, and the light reflective resin 30 is disposed relatively thick between the side surface 3a of the active layer 3 and the conductive member 60B. Therefore, light absorption by the conductive member 60B can be suppressed, and luminous efficiency can be improved. At this time, it is preferable that at least a region where the n-side electrode 5 </ b> D is provided on the light-transmitting substrate 1 is covered with the light-reflective resin 30.

Further, as in the light emitting element 10 'used in the light emitting device according to the modification shown in FIG. 6, the n-side electrode 5E provided in both end regions A1 is extended so as to partially enter the back surface side of the wavelength conversion member. May be. By doing so, the area of the active layer 3 is reduced as compared with the embodiment shown in FIGS. 5A and 5B, while the area of the electrode in contact with the n-type semiconductor layer 2 is increased to reduce the forward voltage Vf. Can be reduced.
[Embodiment 4]

  Finally, a light-emitting element used in a light-emitting device according to Embodiment 4 of the present invention is shown in a schematic plan view of FIG. 7A and a schematic cross-sectional view of FIG. 7B. Note that FIG. 7B shows a schematic cross section of the light emitting element taken along the line BB of FIG. 7A. In the light emitting device according to the fourth embodiment, the configuration except for the structure of the light emitting element 10 ″ shown in FIGS. 7A and 7B is substantially the same as that of the above-described first embodiment. 7A, the hatched region corresponds to the exposed portion 2A ″. In the present embodiment, the exposed portion 2A ″ does not have an outer peripheral region, and is constituted by both end regions.

  As shown in FIG. 7A, in plan view, both end regions that are exposed portions 2A ″ are provided so as to have a plurality of convex regions 2b in which the n-type semiconductor layer 2 extends beyond the wavelength conversion member 20. The n-side electrode 5F is arranged so as to cover the convex region 2b and the transparent substrate 1. Specifically, as shown in FIG. In the fourth embodiment, four protruding regions 2b are formed, and the n-side electrode 5F is electrically connected to the protruding region 2b. As a result, the region from which the light from the active layer 3 propagates in the n-type semiconductor layer 2 can be reduced, so that the light from the active layer 3 is repeatedly reflected in the n-type semiconductor layer 2 to be reflected on the n-type semiconductor layer 2. As a result, the luminous efficiency of the light emitting device 100 is improved. Rukoto can.

  INDUSTRIAL APPLICABILITY The light emitting device of the present invention can be suitably used not only for light emitting elements constituting various light sources such as a backlight light source, a display, lighting, a vehicle lamp, or the like, but also for light receiving elements and other semiconductor devices.

10, 10 ', 10 "light-emitting element 10B Light-emitting element 1 located at both ends Light-transmitting substrate 2 n-type semiconductor layer 2A, 2A', 2A" Exposed portion A1, A1 'Both-end region A2 Outer-peripheral region A3 Extension region A4 Hole portion 2b Convex region 3 Active layer 3a Side surface 4 p-type semiconductor layers 5, 5B, 5C, 5D, 5E, 5F n-side electrode 5a inner side surface 6 of n-side electrode 6 p-side electrode 20 wavelength conversion member 21 light extraction surface 22 Light receiving surface 23 Side surface 30 Light reflective resin 40 Adhesive member 50 Mounting substrate 51 Wiring 60, 60B Conductive adhesive 100 Light emitting device

Claims (10)

A mounting board,
On the mounting substrate, a plurality of light emitting elements arranged in the first direction with an interval,
A light extraction surface side of the plurality of light emitting elements, a plate-shaped wavelength conversion member covering the plurality of light emitting elements and between the plurality of light emitting elements,
A light-reflective resin covering the periphery of the plurality of light-emitting elements and side surfaces of the wavelength conversion member,
The plurality of light emitting elements are each sequentially from the light extraction surface side,
A translucent substrate;
An n-type semiconductor layer provided on the light-transmitting substrate;
An active layer provided on a part of the n-type semiconductor layer;
A p-type semiconductor layer provided on the active layer,
The n-type semiconductor layer has both end regions provided at both ends in a second direction orthogonal to the first direction along the first direction and located outside a side surface of the p-type semiconductor layer. ,
Wherein the n-type semiconductor layer of at least said end region, wherein the n-side electrode along the first direction is provided, and p-side electrode is provided on the p-type semiconductor layer,
In the second direction, both side surfaces of the wavelength conversion member are located on substantially the same plane as both side surfaces of the active layer or outside the both side surfaces of the active layer,
The light reflective resin is configured to cover a side surface of the wavelength conversion member above an upper surface of the light transmissive substrate ,
The light emitting device according to claim 1, wherein the plurality of light emitting elements are arranged in the first direction such that the n-side electrodes of the plurality of light emitting elements are arranged along the first direction . The light emitting device according to claim 1,
In the second direction, both side surfaces of the wavelength conversion member are respectively positioned between a side surface of the active layer and an inner side surface facing the side surface of the active layer in the second direction of the n-side electrode. A light-emitting device, comprising: A light emitting device according to any one of claims 1 or 2,
A light emitting device, wherein, among the plurality of light emitting elements, the side surfaces of the active layer of adjacent light emitting elements are adjacent to each other. A light emitting device according to any one of claims 1 to 3,
A light-emitting device, wherein both end regions provided with the n-side electrode are covered with the light-reflective resin. A light emitting device according to any one of claims 1-4,
The light emitting element located at the end in the first direction includes an extension region extending in the first direction from the edge of the wavelength conversion member,
The light emitting device further comprises the n-side electrode provided on the extension region. A light emitting device according to any one of claims 1 to 5,
The light-transmitting substrate is provided so as to extend from the both end regions of the n-type semiconductor layer in the second direction,
A light-emitting device comprising: the n-side electrode formed so as to straddle the light-transmitting substrate and the both end regions. The light emitting device according to claim 6 ,
A light emitting device, wherein at least a region where the n-side electrode is provided is coated with the light-reflective resin on the light-transmitting substrate. A light emitting device according to claim 6 or 7,
The light emitting device according to claim 1, wherein the n-side electrodes provided at the both end regions are extended so as to enter the back side of the wavelength conversion member. The light emitting device according to claim 6 ,
In plan view, the both end regions form a plurality of convex regions in which the n-type semiconductor layer extends more than the wavelength conversion member,
A light emitting device comprising an n-side electrode formed so as to cover the plurality of convex regions and the translucent substrate. A mounting board,
On the mounting substrate, a plurality of light emitting elements arranged in the first direction with an interval,
On the light extraction surface side of the plurality of light emitting elements, a wavelength conversion member that covers the plurality of light emitting elements and between the plurality of light emitting elements,
A light-reflective resin covering the periphery of the plurality of light-emitting elements and side surfaces of the wavelength conversion member,
The plurality of light emitting elements are, in order from the light extraction surface side, an n-type semiconductor layer, an active layer provided on a part of the n-type semiconductor layer, and a p-type semiconductor layer provided on the active layer. Has,
The n-type semiconductor layer has both end regions provided at both ends in a second direction orthogonal to the first direction along the first direction and located outside a side surface of the p-type semiconductor layer. ,
Wherein the n-type semiconductor layer of at least said end region, wherein the n-side electrode along the first direction is provided, and p-side electrode is provided on the p-type semiconductor layer,
In the second direction, both side surfaces of the wavelength conversion member are located on substantially the same plane as both side surfaces of the active layer or outside the both side surfaces of the active layer ,
The light emitting device according to claim 1, wherein the plurality of light emitting elements are arranged such that the n-side electrodes of the plurality of light emitting elements are arranged along the first direction.

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