JP6550750B2 - Electro-optical device and electronic apparatus - Google Patents

Description

  The present invention relates to an electro-optical device and an electronic apparatus.

  As an example of an electro-optical device, there has been proposed an organic EL device in which pixels using organic electroluminescence (EL) elements are arranged in a matrix in a display region of an element substrate (for example, Patent Documents 1 and 2). See).

  Specifically, in Patent Document 1, an organic EL element in which a first electrode (pixel electrode), a light emitting layer, and a second electrode (counter electrode) are sequentially stacked, and the first electrode are electrically connected. And a switching element (transistor) that switches electrical connection between the first electrode and the power supply line, and the first electrode is overlaid on the light-reflective power supply line (reflective layer). An organic EL device having an arranged top emission structure is disclosed.

  On the other hand, Patent Document 2 discloses an organic EL element having a resonant structure (cavity structure) in which a reflective layer, an optical path adjusting layer, a first electrode (pixel electrode), a light emitting layer, and a second electrode (counter electrode) are sequentially stacked. According to the optical distance between the reflective layer adjusted by the optical path adjusting layer and the second electrode while repeatedly reflecting the light emitted from the light emitting layer between the reflective layer and the second electrode An organic EL device is disclosed that emits light by enhancing light of a specific wavelength (resonant wavelength).

JP 2005-321815 A JP 2013-089444 A

  By the way, when the structure described in Patent Document 1 is applied to the organic EL device described in Patent Document 2, the optical line between the power line (reflective layer) and the first electrode (pixel electrode) is used. The optical path is adjusted according to the distance. However, a thin insulating film (optical path adjustment layer) is disposed between the power supply line and the first electrode. Therefore, when a defect or the like occurs in the insulating film and a short circuit occurs between the power supply line and the first electrode, the potential of the power supply line is applied to the pixel electrode as it is. In this case, in a pixel in which a short circuit occurs, light emission always occurs as a bright spot regardless of the operation of the switching element, so normal light emission operation can not be performed.

  One aspect of the present invention has been proposed in view of such conventional circumstances, and can improve the operational reliability of the light-emitting element, and can further improve the yield, and An object of the present invention is to provide an electronic apparatus including such an electro-optical device.

An electro-optical device according to an aspect of the present invention includes an element substrate including a display area in which a plurality of pixels are arranged in a matrix. The element substrate includes a light emitting element and a transistor for driving the light emitting element for each pixel. The light emitting element is disposed on the transistor via the insulating layer, and the reflective electrode, the protective layer, the optical path adjusting layer, the first electrode, the light emitting layer, and the second electrode are laminated. Has a structured. The reflective electrode is disposed separately for each pixel, and the transistor and the reflective electrode are electrically connected via the first contact electrode disposed penetrating the insulating layer, and disposed through the protective layer. The reflective electrode and the first electrode are electrically connected via the second contact electrode. A gap is formed between each of the reflective electrodes disposed divided for each pixel, and the protective layer covers the surface on which the reflective electrode is disposed, and an insulating film having a recess formed inside the gap, And a buried insulating film embedded in the recess .

  According to this configuration, since the transistor and the first electrode are electrically connected via the reflective electrode, the reflective electrode and the first electrode have the same potential. Thus, the light-emitting operation of the light-emitting element with high reliability can be performed while controlling the potential applied to the first electrode from the transistor through the reflective electrode. In addition, according to this configuration, when the above-described conventional power supply line (reflection electrode) and the first electrode (pixel electrode) are short-circuited (short-circuited), the potential of the power supply line is applied to the first electrode as it is. Thus, the yield can be further improved.

  In the electro-optical device, a gap is formed between each of the reflective electrodes arranged separately for each pixel, and the protective layer covers the surface on which the reflective electrode is arranged and is formed inside the gap. The structure may include an insulating film having a recess and a buried insulating film embedded in the recess.

  According to this configuration, the surface of the protective layer on the side in contact with the optical path adjustment layer is flattened, and the optical path adjustment between the reflective electrode and the first electrode by the optical path adjustment layer can be accurately performed for each pixel. It is possible to perform the light emitting operation of the light emitting element with good color reproducibility by the resonance structure.

  In the above-described electro-optical device, the optical path adjustment layer may be configured to cover the surface of the buried insulating film and be disposed such that at least a part of the end portion is positioned on the surface of the insulating film. .

  According to this configuration, when patterning the optical path adjustment layer into a predetermined shape, it is possible to make the insulating film function as an etching stopper for the optical path adjustment layer while protecting the embedded insulating film.

  In the electro-optical device, the insulating film may include silicon nitride, and the optical path adjustment layer may include silicon oxide.

  According to this configuration, it is possible to selectively etch silicon oxide with respect to silicon nitride by dry etching using a fluorine-based gas, for example. Therefore, when patterning an optical path adjustment layer into a predetermined shape, it is possible to make an insulating film function as an etching stopper of an optical path adjustment layer.

  In the above-described electro-optical device, a contact hole passing through the optical path adjustment layer and the protective layer is formed, and the second contact electrode is connected to the first contact portion connected to the reflective electrode in a state embedded in the contact hole. And a second contact portion connected to the first electrode in a state of being disposed on the surface of the protective layer.

  According to this configuration, it is possible to reliably connect the reflective electrode and the first electrode via the second contact electrode.

  In the electro-optical device, at least a part of the end of the optical path adjustment layer may be located on the surface of the second contact portion.

  According to this configuration, when the optical path adjustment layer is patterned into a predetermined shape, the second contact portion can function as an etching stopper for the optical path adjustment layer, and the aperture ratio of each pixel can be increased.

  Further, the electro-optical device may have a configuration in which an increased reflection layer is disposed on the surface of the reflective electrode.

  According to this configuration, it is possible to improve the reflection characteristics of the reflective electrode.

  An electronic apparatus according to an aspect of the invention includes any one of the above electro-optical devices.

  According to this configuration, it is possible to improve the operation reliability of the light emitting element, and to provide an electronic apparatus provided with the electro-optical device capable of further improving the yield.

It is a top view which shows the structure of the organic electroluminescent apparatus which concerns on one Embodiment of this invention. It is a circuit diagram which shows the structure of the element board | substrate with which the organic EL apparatus shown in FIG. 1 is provided. It is a circuit diagram which shows the structure of the pixel circuit with which the organic EL apparatus shown in FIG. 1 is provided. It is a top view which shows the structure of the pixel with which the organic EL apparatus shown in FIG. 1 is provided. 5A is a cross-sectional view according to the first embodiment taken along line A-A ′ shown in FIG. 4, and FIG. 5B is an enlarged cross-sectional view of a part of pixels shown in FIG. (A) A cross-sectional view according to the first embodiment by line segment B-B 'shown in FIG. 4, (b) A cross-sectional view according to the first embodiment by line segment C-C' shown in FIG. (C) It is sectional drawing which concerns on 1st Embodiment by line segment DD 'shown in FIG. (A) Sectional drawing which concerns on 2nd Embodiment by line segment A-A 'shown in FIG. 4, (b) It is sectional drawing to which the one part pixel shown in (a) was expanded. (A) A cross-sectional view according to the second embodiment with a line segment BB 'shown in FIG. 4, (b) A cross-sectional view according to a second embodiment with a line segment CC' shown in FIG. (C) It is sectional drawing which concerns on 2nd Embodiment by line segment DD 'shown in FIG. It is sectional drawing for demonstrating the manufacturing process of the organic electroluminescent apparatus concerning 2nd Embodiment. FIG. 5A is a cross-sectional view according to the third embodiment taken along line A-A ′ shown in FIG. 4, and FIG. 5B is an enlarged cross-sectional view of a part of pixels shown in FIG. (A) a sectional view according to the third embodiment taken along line BB 'shown in FIG. 4, (b) a sectional view according to the third embodiment taken along line CC' shown in FIG. (C) It is sectional drawing which concerns on 3rd Embodiment by line segment DD 'shown in FIG. It is the schematic which shows an example of the electronic device provided with the organic electroluminescent apparatus shown in FIG.

Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
Note that this embodiment shows one aspect of the present invention, and does not limit the present invention, and can be arbitrarily changed within the scope of the technical idea of the present invention. In each of the following drawings, the scale of each layer or each part is made different from the actual scale so that each layer or each part can be recognized on the drawing.

First Embodiment
(Organic EL device)
An organic EL device 100 shown in FIG. 1 as the first embodiment of the present invention is a self-luminous display device shown as an example of the “electro-optical device” in the present invention. FIG. 1 is a plan view schematically showing the configuration of the organic EL device 100.

First, the outline of the organic EL device 100 according to the present embodiment will be described with reference to FIG.
As shown in FIG. 1, the organic EL device 100 includes an element substrate 10 and a protective substrate 70. The element substrate 10 and the protective substrate 70 are bonded to each other by an adhesive (not shown) while facing each other. For example, an epoxy resin or an acrylic resin can be used as the adhesive.

  The element substrate 10 includes, as light emitting elements, a pixel 20B in which an organic EL element 30B that emits blue (B) light is disposed, a pixel 20G in which an organic EL element 30G that emits green (G) light is disposed, and a red ( The pixel 20R in which the organic EL element 30R that emits the light R) is arranged has a display region E arranged in a matrix.

  In the organic EL device 100, the pixel 20B, the pixel 20G, and the pixel 20R are used as a display unit to provide a full color display. In the following description, the pixel 20B, the pixel 20G, and the pixel 20R may be collectively handled as the pixel 20, and the organic EL element 30B, the organic EL element 30G, and the organic EL element 30R are collectively handled as the organic EL element 30. There is.

  In the display area E, a color filter layer 50 is provided. In the color filter layer 50, the blue color filter layer 50B is disposed on the organic EL element 30B of the pixel 20B, and the green color filter layer 50G is disposed on the organic EL element 30G of the pixel 20G. The red color filter layer 50R is disposed on the organic EL element 30R of the pixel 20R.

  In the present embodiment, the pixels 20 from which light emission of the same color is obtained are arranged in the Y direction (first direction), and the pixels 20 from which light emission of different colors is obtained cross (orthogonal) the Y direction. 2 direction). Therefore, the arrangement of the pixels 20 is a so-called stripe method. Depending on the arrangement of the pixels, the organic EL element 30B, the organic EL element 30G, and the organic EL element 30R are respectively arranged in a stripe shape, and the blue color filter layer 50B, the green color filter layer 50G, and the red color filter are arranged. Layers 50R are also arranged in stripes. The arrangement of the pixels 20 is not limited to the stripe method, and may be a mosaic method or a delta method.

  The organic EL device 100 has a top emission structure. Therefore, light emitted from the organic EL element 30 is transmitted through the color filter layer 50 of the element substrate 10 and emitted from the side of the protective substrate 70 as display light.

  Since the organic EL device 100 has a top emission structure, an opaque ceramic substrate or semiconductor substrate can be used as the base of the element substrate 10 in addition to the transparent quartz substrate or glass substrate. In the present embodiment, a silicon substrate (semiconductor substrate) is used as the base material of the element substrate 10.

  Outside the display area E, a plurality of external connection terminals 103 are arranged along one side on the long side of the element substrate 10. A data line drive circuit 101 is provided between the plurality of external connection terminals 103 and the display area E. The scanning line driving circuit 102 is provided between the display area E and the two short sides of the element substrate 10. In the following description, the direction along the long side of the element substrate 10 is the X direction, the direction along the short side of the element substrate 10 is the Y direction, and the direction from the protective substrate 70 toward the element substrate 10 is Z ( +) Direction.

  The protective substrate 70 is smaller than the element substrate 10 and is disposed to face the element substrate 10 so that the external connection terminals 103 are exposed. The external connection terminal 103 is connected to the flexible wiring board 104. Thus, the organic EL device 100 can be electrically connected to an external circuit (not shown) via the flexible wiring substrate 104.

  The protective substrate 70 is a translucent substrate, and a quartz substrate, a glass substrate, or the like can be used. The protective substrate 70 has a role of protecting the organic EL elements 30 arranged in the display area E so as not to be damaged, and is provided wider than the display area E.

  FIG. 2 is a circuit diagram showing the structure of the element substrate 10. As shown in FIG. 2, on the element substrate 10, m rows of scanning lines 12 extend in the X direction, and n columns of data lines 14 extend in the Y direction. Further, power supply lines 19 are provided extending in the Y direction on the element substrate 10 along the data lines 14 for each column.

  In the element substrate 10, pixel circuits 110 are provided corresponding to intersections between the m rows of scanning lines 12 and the n columns of data lines 14. The pixel circuit 110 forms a part of the pixel 20. In the display area E, m row × n column pixel circuits 110 are arranged in a matrix.

  A reset potential Vorst for initialization is supplied (powered) to the power line 19. Furthermore, although not shown, three control lines for supplying control signals Gcmp, Gel, and Gorst are provided in parallel to the scanning line 12.

  The scanning line 12 is electrically connected to the scanning line driving circuit 102. The data line 14 is electrically connected to the data line driving circuit 101. The scanning line driving circuit 102 is supplied with a control signal Ctr1 for controlling the scanning line driving circuit 102. The data line driving circuit 101 is supplied with a control signal Ctr2 for controlling the data line driving circuit 101.

  The scanning line driving circuit 102 scans the scanning lines 12 for each row over a frame period, scanning signals Gwr (1), Gwr (2), Gwr (3),..., Gwr (m−1), Gwr. (M) is generated according to the control signal Ctr1. Further, the scanning line driving circuit 102 supplies control signals Gcmp, Gel, and Gorst to the control lines in addition to the scanning signal Gwr. Note that the frame period is a period in which an image for one cut (frame) is displayed on the organic EL device 100. For example, if the frequency of the vertical synchronization signal included in the synchronization signal is 120 Hz, the period of one frame Is about 8.3 milliseconds.

  The data line driving circuit 101 applies the data signals Vd (1), Vd (2), Vd (2), the potentials corresponding to the gradation data of the pixel circuit 110 to the pixel circuit 110 located in the row selected by the scanning line driving circuit 102. .., Vd (n) is supplied to the data lines 14 in the first, second,.

  FIG. 3 is a circuit diagram showing a configuration of the pixel circuit 110. As shown in FIG. As shown in FIG. 3, the pixel circuit 110 includes P-channel MOS transistors 121, 122, 123, 124, and 125, an organic EL element 30, and a capacitor 21. The above-described scan signal Gwr, control signals Gcmp, Gel, Gorrst and the like are supplied to the pixel circuit 110.

  The organic EL element 30 has a structure in which a light emitting function layer (light emitting layer) 32 is sandwiched between a pixel electrode (first electrode) 31 and a counter electrode (second electrode) 33 facing each other.

  The pixel electrode 31 is an anode that supplies holes to the light emitting functional layer 32 and is formed of a light-transmitting conductive material. In the present embodiment, for example, an ITO (Indium Tin Oxide) film having a thickness of 200 nm is formed as the pixel electrode 31. The pixel electrode 31 is electrically connected to the drain of the transistor 124 and one of the source and the drain of the transistor 125.

  The counter electrode 33 is a cathode that supplies electrons to the light emitting functional layer 32, and is formed of a conductive material having light transmissivity and light reflectivity, such as an alloy of magnesium (Mg) and silver (Ag). . The counter electrode 33 is a common electrode provided across the plurality of pixels 20, and is electrically connected to the power supply line 8. The power supply line 8 is supplied with a potential Vct which is the lower side of the power supply in the pixel circuit 110.

  The light emitting functional layer 32 includes a hole injection layer, a hole transport layer, an organic light emitting layer, an electron transport layer, and the like stacked in order from the pixel electrode 31 side. In the organic EL element 30, the light emitting function layer 32 emits light by combining the holes supplied from the pixel electrode 31 and the electrons supplied from the counter electrode 33 in the light emitting function layer 32.

  Further, on the element substrate 10, power supply lines 6 are provided extending in the X direction so as to intersect the respective power supply lines 19. Power supply line 6 may extend in the Y direction, or may extend in both the X direction and the Y direction. The source of the transistor 121 is electrically connected to the power supply line 6, and the drain is electrically connected to the other of the source and the drain of the transistor 123 and the source of the transistor 124. The power supply line 6 is supplied with a potential Vel which is the high power side of the power supply in the pixel circuit 110. Further, one end of a capacitor 21 is electrically connected to the power supply line 6. The transistor 121 functions as a driving transistor that allows current to flow according to the voltage between the gate and the source of the transistor 121.

  The gate of the transistor 122 is electrically connected to the scan line 12, and one of the source and the drain is electrically connected to the data line 14. In the transistor 122, the other of the source and the drain is electrically connected to the gate of the transistor 121, the other end of the capacitor 21, and one of the source and the drain of the transistor 123. The transistor 122 is electrically connected between the gate of the transistor 121 and the data line 14, and functions as a writing transistor that controls the electrical connection between the gate of the transistor 121 and the data line 14.

  The gate of the transistor 123 is electrically connected to the control line, and the control signal Gcmp is supplied. The transistor 123 functions as a threshold compensation transistor that controls electrical connection between the gate and drain of the transistor 121.

  The gate of the transistor 124 is electrically connected to the control line, and the control signal Gel is supplied. The drain of the transistor 124 is electrically connected to one of the source and the drain of the transistor 125 and the pixel electrode 31 of the organic EL element 30. The transistor 124 functions as a light emission control transistor that controls electrical connection between the drain of the transistor 121 and the pixel electrode 31 of the organic EL element 30.

  The gate of the transistor 125 is electrically connected to the control line, and the control signal Gorst is supplied. The other of the source and the drain of the transistor 125 is electrically connected to the power supply line 19 and supplied with a reset potential Vorst. The transistor 125 functions as an initialization transistor that controls the electrical connection between the power supply line 19 and the pixel electrode 31 of the organic EL element 30.

  FIG. 4 is a plan view showing a configuration of the pixel 20 (pixels 20B, 20G, and 20R). FIG. 5A is a cross-sectional view of the pixels 20B, 20G, and 20R along the X direction taken along line A-A 'shown in FIG. FIG. 5B is an enlarged cross-sectional view of a part of the pixels 20R shown in FIG. FIG. 6A is a cross-sectional view along the Y direction of the pixel 20B taken along line B-B ′ shown in FIG. FIG. 6B is a cross-sectional view along the Y direction of the pixel 20G along the line segment C-C ′ shown in FIG. FIG. 6C is a cross-sectional view along the Y direction of the pixel 20R along the line D-D ′ shown in FIG.

  Each of the pixels 20B, 20G, and 20R has a rectangular shape in plan view as shown in FIG. 4 and FIGS. 5A and 5B, and the short side direction is the X direction (longitudinal direction is the Y direction). Are arranged in parallel with each other. In addition, a pixel separation layer 29 is provided between the organic EL elements 30B, 30G, and 30R.

The pixel separation layer 29 is made of an insulating material and electrically insulates between the adjacent organic EL elements 30B, 30G, and 30R. In the present embodiment, for example, a silicon oxide (SiO ₂ ) film with a film thickness of 25 nm is formed as the pixel separation layer 29. The pixel separation layer 29 is provided to cover the peripheral portion of the pixel electrode 31 of each of the pixels 20B, 20G, and 20R. That is, the pixel separation layer 29 is provided with an opening 29CT for exposing a part of the pixel electrode 31 of each of the pixels 20B, 20G, and 20R. The opening 29CT has a rectangular shape in plan view, and defines a light emitting area of each pixel 20.

  The organic EL elements 30B, 30G, and 30R disposed in the respective pixels 20B, 20G, and 20R are formed of an interlayer insulating layer (insulating layer) as shown in FIGS. 5A and 5B and FIGS. Resonant structure in which the reflective electrode 35, the reflective layer 36, the protective layer 37, the optical path adjustment layer 38, the pixel electrode 31, the light emitting functional layer 32, and the counter electrode 33 are stacked on the layer 34). (Cavity structure). In addition, in FIG. 4, FIG. 5 (a), (b) and FIG. 6 (a)-(c), illustration of the light emitting functional layer 32 and the counter electrode 33 which were mentioned above is abbreviate | omitted.

  In the resonance structure, the light emitted from the light emitting functional layer 32 is repeatedly reflected between the reflective electrode 35 and the counter electrode 33, and optically between the reflective electrode 35 and the counter electrode 33 adjusted by the optical path adjustment layer 38. It is possible to enhance and emit light of a specific wavelength (resonance wavelength) according to the distance.

For the interlayer insulating layer 34, for example, an insulating material such as silicon oxide (SiO ₂ ) is used. Although only the transistor 124 is shown under the interlayer insulating layer 34 in FIG. 5A, in addition to the transistor 124, the scanning line 12, the data line 14, and the power source are shown under the interlayer insulating layer 34. A line 19, a control line, a power supply line 6, transistors 121, 122, 123, 124, 125 that constitute the pixel circuit 110, a capacitor 21, and the like are arranged. Irregularities may be formed on the surface of the interlayer insulating layer 34 according to these transistors, wirings, and the like, but it is preferable that the surface on which the reflective electrode 35 is formed be planarized.

  The reflective electrode 35 is divided for each pixel 20. That is, the reflective electrode 35 is provided in each of the pixels 20B, 20G, and 20R. In addition, a gap 35CT is formed between adjacent reflective electrodes 35. Therefore, a gap 35CT is provided between each of the adjacent reflective electrodes 35 so as to be electrically separated for each pixel 20 so that different potentials can be applied.

  The reflective electrode 35 is made of a conductive material having light reflectivity, and is formed in a rectangular shape in plan view. The reflective electrode 35 is larger than the pixel electrode 31 and defines the reflective region of each pixel 20. In the present embodiment, as the reflective electrode 35, for example, on a titanium (Ti) film having a thickness of 30 nm to be the first layer 35a, aluminum (Al) and copper (Cu) having a thickness of 100 nm to be the second layer 35b. Alloy (AlCu) film is formed.

  The reflective electrode 35 is electrically connected to the drain of the transistor 124 described above via the first contact electrode 28 (see FIGS. 3 and 5A) disposed through the interlayer insulating layer 34. Has been. In addition, the reflective electrode 35 is electrically connected to one of the source and the drain (not shown) of the transistor 125 through the first contact electrode 28. For the first contact electrode 28, for example, a conductive material such as tungsten (W), titanium (Ti), titanium nitride (TiN) or the like can be used. In the present embodiment, the first layer 35 a of the reflective electrode 35 is connected to the first contact electrode 28.

The reflection enhancing layer 36 is for enhancing the reflection characteristics of the reflection electrode 35, and is made of, for example, an insulating material having light transparency. The increased reflection layer 36 is disposed so as to cover the surface of the reflective electrode 35. In the present embodiment, for example, a silicon oxide (SiO ₂ ) film having a thickness of 40 nm is formed as the reflection increasing layer 36.

The protective layer 37 is provided to cover the surface of the reflective electrode 35 in which the gap 35CT is formed. The protective layer 37 has a first insulating film 39 and a buried insulating film 40. The first insulating film 39 is provided on the surfaces of the increased reflection layer 36, the reflective electrode 35, and the interlayer insulating layer 34, and is formed along the gap 35CT. Therefore, the first insulating film 39 has a recess 39a corresponding to the gap 35CT. The buried insulating film 40 is formed so as to fill the recess 39a. The protective layer 37 is planarized on the side in contact with the optical path adjustment layer 38 by the embedded insulating film embedded in the concave portion 37a. In the present embodiment, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40.

  The optical path adjustment layer 38 has insulating films 38 a and 38 b disposed on the surface of the protective layer 37. The optical path adjustment layer 38 performs optical path adjustment according to the optical distance between the reflective electrode 35 and the counter electrode 33 for each of the pixels 20B, 20G, and 20R.

Specifically, the film thickness of the optical path adjustment layer 38 increases in the order of the pixel 20B, the pixel 20G, and the pixel 20R. That is, in the pixel 20B, as shown in FIG. 6A, the insulating films 38a and 38b are omitted so that, for example, the resonance wavelength (peak wavelength at which the brightness is maximum) is 470 nm. In the pixel 20G, as shown in FIG. 6B, the insulating film 38a is provided so that, for example, the resonance wavelength is 540 nm. In the pixel 20R, as shown in FIG. 6C, the insulating films 38a and 38b are provided such that the resonance wavelength is, for example, 610 nm. In the present embodiment, as the insulating film 38a, for example, to form a film thickness of 40nm silicon oxide (SiO _2), as the insulating film 38b, for example to form a film thickness of 50nm silicon oxide (SiO _2). The increased reflection layer 36 and the protective layer 37 also perform optical path adjustment according to the optical distance between the reflective electrode 35 and the counter electrode 33. For example, in the pixel 20B, the increased reflection layer 36 and the protective layer 37 The film thickness is set, for example, such that the resonant wavelength (peak wavelength at which the luminance is maximum) is 470 nm.

  Thereby, blue (B) light having a peak wavelength of 470 nm is emitted from the pixel 20B, green (G) light having a peak wavelength of 540 nm is emitted from the pixel 20G, and 610 nm is peaked from the pixel 20R. A red (R) light of a wavelength is emitted. In the organic EL device 100, the color purity of the display light emitted from each pixel 20 is enhanced by the organic EL element 30 having such a resonant structure.

The optical path adjustment layer 38 is provided between the organic EL elements 30B, 30G, and 30R. Specifically, the optical path adjustment layer 38 is made of the same material as the buried insulating film 40, and the optical path adjustment layer 38 is provided so as to cover the buried insulating film 40. According to such a configuration, the optical path adjustment layer 38 can be processed according to the resonance wavelength without impairing the flatness of the surface of the protective layer 37 on the pixel electrode 31 side. In the present embodiment, the optical path adjustment layer 38 and the buried insulating film 40 are made of silicon oxide (SiO ₂ ).

  On the optical path adjustment layer 38, as shown in FIGS. 5A and 5B and FIGS. 6A to 6C, the pixel electrode 31 is disposed. The pixel electrode 31 is electrically connected to the reflective electrode 35 via the second contact electrode 41. Specifically, a contact hole 41CT is provided so as to penetrate the protective layer 37 and the increased reflection layer 36. The contact hole 41CT is located below the area where the pixel separation layer 29 is formed, which does not overlap with the opening 29CT in a plan view.

  The second contact electrode 41 has a first contact part 41a and a second contact part 41b. The first contact portion 41 a is disposed in the contact hole 41 CT, and is connected to the second layer 35 b of the reflective electrode 35. The second contact portion 41 b is disposed on the surface of the protective layer 37 and connected to the pixel electrode 31. In the present embodiment, for example, a titanium nitride (TiN) film is formed as the second contact electrode 41, and the second contact portion 41b is formed to have a thickness of 50 nm.

  As shown in FIGS. 5A and 5B and FIGS. 6A to 6C, a part of the optical path adjustment layer 38 is formed to overlap the second contact electrode 41. According to such a configuration, the second contact electrode 41 is disposed in the vicinity of the region between the organic EL elements 30B, 30G, and 30R without impairing the flatness of the surface of the protective layer 37 on the pixel electrode 31 side. can do. Thus, the area not contributing to light emission can be reduced, and the aperture ratio of each pixel 20 can be increased.

  As shown in FIG. 6A, in the pixel 20B, the insulating films 38a and 38b constituting the optical path adjustment layer 38 are provided in a region overlapping a part of the second contact electrode 41 or the embedded insulating film 40. . The insulating films 38a and 38b constituting the optical path adjustment layer 38 are not provided on a part of the surface of the second contact electrode 41, and the conductive material constituting the pixel electrode 31 is the second contact at that portion. The conductive material stacked on the electrode 41 and constituting the pixel electrode 31 is in contact with the second contact electrode 41.

  As shown in FIG. 6B, in the pixel 20G, the insulating film 38a constituting the optical path adjustment layer 38 is provided in a region overlapping a part of the second contact electrode 41 or the buried insulating film 40. A contact hole is provided in the insulating film 38 b, a conductive material forming the pixel electrode 31 is disposed in the contact hole, and the pixel electrode 31 is connected to the second contact electrode 41. In the pixel 20G, the insulating film 38b constituting the optical path adjustment layer 38 is provided on almost the entire surface except the contact hole. More specifically, the insulating film 38 a constituting the optical path adjustment layer 38 is provided in a region overlapping a part of the second contact electrode 41, the reflective electrode 35, or the embedded insulating film 40.

  As shown in FIG. 6C, in the pixel 20 </ b> R, the insulating films 38 a and 38 b constituting the optical path adjustment layer 38 are regions that overlap with part of the second contact electrode 41, the reflective electrode 35, or the buried insulating film 40. Is provided. Then, contact holes are provided in the insulating films 38 a and 38 b, a conductive material forming the pixel electrode 31 is disposed in the contact holes, and the pixel electrode 31 is connected to the second contact electrode 41.

  Although not shown, the above-described light emitting functional layer 32 and the counter electrode 33 are disposed on the pixel electrode 31, and further cover the surface of the element substrate 10 and further the organic EL element 30. By disposing a sealing layer (passivation film) 49 that planarizes the surface, intrusion of moisture, oxygen, or the like into the organic EL element 30 is suppressed. The color filter layer 50 described above is disposed on the surface of the sealing layer 49.

  By the way, in the organic EL device 100 of the present embodiment, the transistor 124 and the reflective electrode 35 are electrically connected through the first contact electrode 28 described above, and the reflective electrode 35 is connected through the second contact electrode 41. The pixel electrode 31 is electrically connected. That is, the pixel electrode 31 is electrically connected to the transistor 124 via the reflective electrode 35. The first contact electrode 28, the reflective electrode 35, the second contact electrode 41, and the pixel electrode 31 have substantially the same potential when the resistance and the contact resistance of these members are ignored.

  Thereby, in the organic EL device 100 according to the present embodiment, when the above-described conventional power supply line (reflection electrode) and the first electrode (pixel electrode) are short-circuited (short-circuited), the potential of the power supply line remains as it is. Since the problem of being applied to the electrodes can be avoided, it is possible to further improve the yield.

  That is, in the organic EL device 100 according to the present embodiment, unlike the case where a part of the power supply line constitutes a reflective electrode as in the prior art, or the case where the power supply line and the reflective electrode are electrically connected And the pixel electrode 31 are electrically connected to each other so that the reflective electrode 35 and the pixel electrode 31 have the same potential. As a result, a defect or the like occurs in the insulating film (the reflective layer 36, the protective layer 37, the optical path adjustment layer 38, etc.) between the reflective electrode 35 and the pixel electrode 31 and a short circuit occurs between the power supply line It is possible to avoid shorting.

  Further, in the organic EL device 100 of the present embodiment, light emission from the highly reliable organic EL element 30 while controlling the potential applied from the transistor 124 to the pixel electrode 31 via the reflective electrode 35 with such a configuration. It is possible to perform an operation.

  Further, in the organic EL device 100 of the present embodiment, the optical path adjustment layer 38 can easily adjust the optical path between the reflective electrode 35 and the pixel electrode 31 while protecting the reflective electrode 35 by the protective layer 37 described above. It is possible to perform the light emitting operation of the organic EL element 30 with good color reproducibility by the above-described resonant structure.

  Furthermore, in the organic EL device 100 according to the present embodiment, the surface of the protective layer 37 on the side in contact with the optical path adjustment layer 38 is flattened, so that the reflective electrode 35 and the pixel formed by the optical path adjustment layer 38 for each pixel 20. The optical path between the electrode 31 and the electrode 31 can be adjusted accurately. Thereby, it is possible to perform the light emission operation of the organic EL element 30 with good color reproducibility by the resonance structure described above.

  Further, in the organic EL device 100 of the present embodiment, the above-described optical path adjustment layer 38 covers the surface of the buried insulating film 40 so that the buried insulating film 40 is formed when the optical path adjustment layer 38 is patterned into a predetermined shape. Can be protected.

Here, the same kind of material is used for the optical path adjustment layer 38 (insulating films 38 a and 38 b) and the embedded insulating film 48, and the first insulating film 39 includes the optical path adjusting layer 38 and the embedded insulating film 48. Different materials are used. In the present embodiment, silicon oxide (SiO ₂ ) is used for the optical path adjustment layer 38 (insulating films 38 a and 38 _b ) and the embedded insulating film 48, and the first insulating film 39 is made of silicon oxide (SiO ₂ ). Also, silicon nitride (SiN) having a low etching rate is used.

  In this case, silicon oxide can be selectively etched with respect to silicon nitride by dry etching using, for example, a fluorine-based gas. The optical path adjusting layer 38 (insulating films 38 a and 38 b) is disposed on the surface of the first insulating film 39 so that at least a part of the end is located. According to this, it is possible to cause the first insulating film 39 to function as an etching stopper of the light path adjustment layer 38.

  Further, in the organic EL device 100 of the present embodiment, the contact electrode 41 described above is on the surface of the first contact portion 41a connected to the reflective electrode 35 in a state of being embedded in the contact hole 41CT and the optical path adjustment layer 38. And a second contact portion 41b connected to the pixel electrode 31 in a state of covering. In this case, it is possible to reliably connect the reflective electrode 35 and the pixel electrode 31 via the second contact electrode 41.

  Furthermore, in the organic EL device 100 according to the present embodiment, the end of at least a part of the light path adjustment layer 38 described above is positioned on the surface of the second contact portion 41 b to make the light path adjustment layer 38 into a predetermined shape. When patterning, the second contact portion 41b can function as an etching stopper for the optical path adjustment layer 38 and the aperture ratio of each pixel 20 can be increased.

Second Embodiment
(Organic EL device)
Next, an organic EL device 100A shown in FIGS. 7 and 8 will be described as a second embodiment of the present invention. In the following description, portions equivalent to those of the organic EL device 100 will be omitted from description and denoted by the same reference numerals in the drawings.

  FIG. 7A is a cross-sectional view of the pixels 20B, 20G, and 20R along the X direction, taken along line A-A 'shown in FIG. FIG. 7B is an enlarged sectional view of a part of the pixels 20R shown in FIG. 7A. FIG. 8A is a cross-sectional view along the Y direction of the pixel 20B along the line segment B-B ′ shown in FIG. FIG. 8B is a cross-sectional view along the Y direction of the pixel 20G along the line segment C-C ′ shown in FIG. FIG. 8C is a cross-sectional view along the Y direction of the pixel 20R along the line segment D-D ′ shown in FIG.

  The organic EL device 100A according to the second embodiment is characterized in that the second insulating film 42 is provided as shown in FIGS. 7 (a) and 7 (b) and FIGS. 8 (a) to 8 (c). It differs from the organic EL device 100 according to the first embodiment.

  Each of the pixels 20B, 20G, and 20R has a rectangular shape in plan view as shown in FIGS. 4 and 7A and 7B, and the lateral direction is the X direction (the longitudinal direction is the Y direction). It is arranged to be parallel to. In addition, a pixel separation layer 29 is provided between the organic EL elements 30B, 30G, and 30R.

  The protective layer 37 is provided so as to cover the surface of the reflective electrode 35 in which the gap 35CT is formed. The protective layer 37 includes a second insulating film 42 in addition to the first insulating film 39 and the buried insulating film 40. The second insulating film 42 is provided between the second contact portion 41 b and the first insulating film 39.

  The first insulating film 39 is provided on the surfaces of the increased reflection layer 36, the reflective electrode 35, and the interlayer insulating layer 34, and is formed along the gap 35CT. Therefore, the first insulating film 39 has a recess 39a corresponding to the gap 35CT. The buried insulating film 40 is formed so as to fill the recess 39a.

  The second insulating film 42 is patterned in the same shape as the second contact portion 41 b. That is, the second insulating film 42 is disposed between the first insulating film 39 and the second contact portion 41b, and has a shape which matches the second contact portion 41b in plan view. Yes.

In the present embodiment, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40. For example, a silicon oxide (SiO ₂ ) film having a thickness of 50 nm is formed as 42.

  Although not shown, the light emitting function layer 32 and the counter electrode 33 described above are disposed on the pixel electrode 31 as in the first embodiment, and the surface of the element substrate 10 is further formed thereon. A sealing layer (passivation film) 49 that covers and flattens the surface of the organic EL element 30 is arranged to suppress the entry of moisture, oxygen, and the like into the organic EL element 30. The color filter layer 50 described above is disposed on the surface of the sealing layer 49.

  By the way, in the organic EL device 100A of the present embodiment, the first insulating film 39 functions as an etching stopper for the second insulating film 42 when the second contact electrode 41 described above is patterned into a predetermined shape. Is possible. As a result, even when the second insulating film 42 is patterned in the same shape as the second contact portion 41b, the thickness of the first insulating film 39 under the second insulating film 42 varies. Can be prevented.

(Method for manufacturing organic EL device)
Specifically, a manufacturing method of the organic EL device 100A of the second embodiment will be described with reference to FIGS. 9A to 9D are cross-sectional views for explaining a manufacturing process of the protective layer 37 and the second contact electrode 41 in the configuration of the organic EL device 100A.

In the present embodiment, first, as shown in FIG. 9A, as the protective layer 37, a first insulating film 39 is formed on the reflective electrode 35 so as to cover the surface of the reflection-increasing layer 36. After forming the buried insulating film 40 embedded in the first insulating film 39, a second insulating film 42 covering the surface planarized by the buried insulating film 40 is formed. In the present embodiment, as described above, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40. and, as the second insulating film 42, for example to form a silicon oxide (SiO ₂₎ film having a thickness of 50nm.

  Next, as shown in FIG. 9B, after forming a contact hole 41CT that penetrates the reflection-increasing layer 36, the first insulating film 39, and the second insulating film 42, the contact hole 41CT is buried. In this state, a conductive film 41EL that covers the surface of the second insulating film 42 is formed. In the present embodiment, as described above, a titanium nitride (TiN) film having a thickness of 50 nm is formed as the conductive film 41EL.

  Next, as shown in FIG. 9C, after applying a resist on the surface of the conductive film 41EL, a mask layer 43 having a shape corresponding to the second contact portion 41b is formed by using a photolithography technique. Thereafter, the conductive film 41EL and the second insulating film 42 are etched until the surface of the first insulating film 39 is exposed.

  At this time, a second insulating film (silicon oxide film) having an etching rate lower than that of the first insulating film 39 with respect to the first insulating film (silicon nitride film) 39 by dry etching using a fluorine-based gas. ) 42 can be selectively etched. Therefore, in the present embodiment, the etching selectivity (the etching rate of the second insulating film 42 / the etching rate of the first insulating film 39) of the first insulating film 39 and the second insulating film 42 is increased. The first insulating film 39 can function as an etching stopper of the second insulating film 42.

  Next, as shown in FIG. 9D, the mask layer 43 is removed. Accordingly, the first contact portion 41a connected to the reflective electrode 35 in a state of being embedded in the contact hole 41CT, and the first contact portion 41a connected to the pixel electrode 31 in a state of being disposed on the surface of the second insulating film 42. A second contact electrode 41 having two contact portions 41b is formed.

  As described above, in the organic EL device 100 of the second embodiment, even when the above-described second insulating film 42 is patterned in the same shape as the second contact portion 41b, the second insulating film 42 Variations in the thickness of the underlying first insulating film 39 can be prevented. Therefore, in the organic EL device 100A, the optical path adjustment between the reflective electrode 35 and the pixel electrode 31 can be accurately performed by adjusting the thickness of the optical path adjustment layer 38 disposed on the surface of the protective layer 37. Since it can do, it is possible to perform light emission operation of organic EL element 30 with good color reproducibility by resonance structure.

Third Embodiment
(Organic EL device)
Next, an organic EL device 100B shown in FIGS. 10 and 11 will be described as a third embodiment of the present invention. In the following description, portions equivalent to those of the organic EL devices 100 and 100A are not described and are denoted by the same reference numerals in the drawings.

  FIG. 10A is a cross-sectional view of the pixels 20B, 20G, and 20R along the X direction, taken along line A-A 'shown in FIG. FIG. 10B is an enlarged cross-sectional view of a part of the pixels 20R shown in FIG. FIG. 11A is a cross-sectional view along the Y direction of the pixel 20B along the line segment B-B ′ shown in FIG. FIG. 11B is a cross-sectional view along the Y direction of the pixel 20G along the line segment C-C ′ shown in FIG. FIG. 11C is a cross-sectional view along the Y direction of the pixel 20R along the line D-D ′ shown in FIG.

  The organic EL device 100B according to the third embodiment has the third insulating film 44, as shown in FIGS. 10 (a), (b) and FIGS. 11 (a) to (c). This is different from the organic EL device 100A according to the second embodiment. Further, the arrangement of the optical path adjustment layer 38 is different from that of the organic EL device 100 according to the first embodiment or the organic EL device 100A according to the second embodiment.

  Each of the pixels 20B, 20G, and 20R has a rectangular shape in plan view as shown in FIGS. 4 and 10A and 10B, and the lateral direction is the X direction (the longitudinal direction is the Y direction). It is arranged to be parallel to. In addition, a pixel separation layer 29 is provided between the organic EL elements 30B, 30G, and 30R.

  The protective layer 37 is provided so as to cover the surface of the reflective electrode 35 in which the gap 35CT is formed. The protective layer 37 includes a first insulating film 39, a buried insulating film 40, a second insulating film 42, and a third insulating film 44.

  The first insulating film 39 is provided on the surfaces of the increased reflection layer 36, the reflective electrode 35, and the interlayer insulating layer 34, and is formed along the gap 35CT. Therefore, the first insulating film 39 has a recess 39a corresponding to the gap 35CT. The buried insulating film 40 is formed so as to fill the recess 39a.

  The second insulating film 42 is provided between the second contact portion 41 b and the third insulating film 44 and is patterned in the same shape as the second contact portion 41 b. That is, the second insulating film 42 is disposed between the first insulating film 39 and the second contact portion 41b, and has a shape which matches the second contact portion 41b in plan view. Yes.

The third insulating film 44 is formed so as to cover the surface flattened by the buried insulating film 40 of the first insulating film 39. The protective layer 37 is planarized on the side in contact with the optical path adjustment layer 38 by the third insulating film 44. In the present embodiment, for example, a silicon nitride (SiN) film having a thickness of 80 nm is formed as the first insulating film 39, and a silicon oxide (SiO ₂ ) film is formed as the embedded insulating film 40. For example, a silicon oxide (SiO ₂ ) film having a thickness of 50 nm is formed as 42, and a silicon nitride (SiN) film having a thickness of 80 nm, for example, is formed as the third insulating film 44.

The end of the optical path adjustment layer 38 (insulating films 38 a and 38 b) is located on the buried insulating film 40. A third insulating film 44 is provided between the end of the light path adjustment layer 38 and the buried insulating film 40. The buried insulating film 40 and the optical path adjusting layer 38 are made of the same material and are made of a material different from that of the third insulating film 44. In the present embodiment, the buried insulating film 40 and the optical path adjustment layer 38 are silicon oxide (SiO ₂ ), and the second insulating film 42 is a silicon nitride (SiN) film. Therefore, it is possible to form the optical path adjustment layer 38 with a different thickness for each pixel 20 without impairing the smoothness of the surface of the protective layer 37.

  In the pixel 20B, for example, the reflection-increasing layer 36, the first insulating film 39, and the third insulating film 44 are formed of the reflective electrode 35 and the pixel electrode 31 so that the resonance wavelength (peak wavelength at which the luminance is maximum) is 470 nm. Between. In the pixel 20G, for example, the reflective reflection layer 36, the first insulating film 39, the third insulating film 44, and the insulating film 38a are provided between the reflective electrode 35 and the pixel electrode 31 so that the resonance wavelength is 540 nm. It has been. In the pixel 20 </ b> R, for example, the reflection-increasing layer 36, the first insulating film 39, the third insulating film 44, the insulating film 38 a, and the insulating film 38 b include the reflective electrode 35, the pixel electrode 31, and the resonant electrode so that the resonance wavelength is 610 nm. It is provided between.

  The ends of the optical path adjustment layer 38 (insulating films 38a and 38b) are located between the pixel 20R and the pixel 20G, between the pixel 20G and the pixel 20B, and between the pixel 20B and the pixel 20R. In the present embodiment, as shown in FIG. 1, since the arrangement of the pixels 20 is a stripe method, the end portion of the optical path adjustment layer 38 is provided in a stripe shape extending in the Y direction. As shown in FIGS. 10A and 10B, the end of the optical path adjustment layer 38 is located above the buried insulating film 40 in the gap 35CT between the adjacent reflective electrodes 35 in the X direction.

  As shown in FIGS. 10A and 11A, in the pixel 20B, the insulating films 38a and 38b constituting the optical path adjustment layer 38 are not disposed substantially over the entire surface. Therefore, the conductive material forming the pixel electrode 31 is disposed on the surface of the second contact electrode 41, and the conductive material forming the pixel electrode 31 is in contact with the second contact electrode 41.

  As described above, the conductive material forming the pixel electrode 31 is formed on the second contact electrode 41 and the third insulating film 44. A part of the pixel isolation layer 29 is stacked on the third insulating film 44. In FIG. 6A or 8A, the insulating films 38a and 38b are provided between the adjacent pixels B. However, in the present embodiment, as shown in FIG. The optical path adjusting layer 38 between them is not necessary. Therefore, in the organic EL device 100B of the third embodiment, the light emitting functional layer 32, the counter electrode 33, the color filter layer 50B, and the like can be formed on a flatter surface.

  As shown in FIGS. 10A and 11B, in the pixel 20G, the insulating film 38a constituting the optical path adjustment layer 38 is not disposed substantially over the entire surface. Then, a contact hole provided in the insulating film 38 b is provided, a conductive material forming the pixel electrode 31 is disposed in the contact hole, and the pixel electrode 31 is connected to the second contact electrode 41.

  In the pixel 20G, the insulating film 38b constituting the optical path adjustment layer 38 is provided on almost the entire surface except the contact hole. More specifically, the insulating film 38 b constituting the optical path adjustment layer 38 is provided so as to overlap with a portion of the second contact electrode 41, and the third insulating film 38 b is formed above the reflective electrode 35 or the buried insulating film 40. It is laminated on the insulating film 44. In FIG. 6B or FIG. 8B, the insulating film 38a is provided between the adjacent pixels G. However, as shown in FIG. The insulating film 38a is unnecessary. Therefore, in the organic EL device 100B of the third embodiment, the light emitting functional layer 32, the counter electrode 33, the color filter layer 50G, and the like can be formed on a flatter surface.

  As shown in FIGS. 10A, 10B and 11C, in the pixel 20R, the insulating films 38a, 38b are provided with contact holes, and the conductive material constituting the pixel electrode 31 is made of this. The pixel electrode 31 is disposed in the contact hole and connected to the second contact electrode 41. In the pixel 20R, the insulating films 38a and 38b constituting the light path adjustment layer 38 are provided on almost the entire surface except the contact holes. More specifically, the insulating films 38 a and 38 b constituting the optical path adjusting layer 38 are provided so as to overlap with a part of the second contact electrode 41, and the first is located above the reflective electrode 35 or the buried insulating film 40. 3 is laminated on the insulating film 44.

  Although not shown, the light emitting function layer 32 and the counter electrode 33 described above are disposed on the pixel electrode 31, and the surface of the element substrate 10 is further covered thereon, and the organic EL element 30 is By disposing a sealing layer (passivation film) 49 that planarizes the surface, intrusion of moisture, oxygen, or the like into the organic EL element 30 is suppressed. The color filter layer 50 described above is disposed on the surface of the sealing layer 49.

  By the way, in the organic EL device 100B of the third embodiment, since the surface of the protective layer 37 on the side in contact with the optical path adjustment layer 38 is flattened, the thickness of the optical path adjustment layer 38 is adjusted for each pixel 20. By doing this, the optical path adjustment between the reflective electrode 35 and the pixel electrode 31 can be accurately performed. Thereby, it is possible to perform the light emission operation of the organic EL element 30 with good color reproducibility by the resonance structure described above.

  Further, in the organic EL device 100B of the third embodiment, the optical path adjustment layer 38 disposed on the surface of the protective layer 37 described above is also flattened, so that the pixels disposed on the surface of the optical path adjustment layer 38 are flattened. The end of the electrode 31 can be arranged close to the recess 39a. This makes it possible to increase the aperture ratio of the pixel 20, that is, the aperture area (light emission area) of the aperture 29CT that defines the light emission area of the pixel 20 described above.

Further, in the organic EL device 100B of the third embodiment, the end of at least a part of the light path adjustment layer 38 (the insulating films 38a and 38b) is disposed on the surface of the third insulating film 44 described above. Has been. Among these, silicon oxide (SiO ₂ ) is used for the optical path adjustment layer 38 (insulation films 38 a and 38 _b ) and the embedded insulation film 48, and the second insulation film 42 is etched more than silicon oxide (SiO ₂ ). Low rate silicon nitride (SiN) is used.

  In this case, silicon oxide can be selectively etched with respect to silicon nitride by dry etching using, for example, a fluorine-based gas. Therefore, when the optical path adjustment layer 38 is patterned into a predetermined shape, the second insulating film 42 can function as an etching stopper for the optical path adjustment layer 38 while protecting the buried insulating film 40.

  In the above-described embodiment, as shown in FIGS. 5A and 5B or FIGS. 7A and 7B, the optical path adjustment layer 38 is embedded from the region overlapping the reflective electrode 35 of the organic EL element 30R. It is arranged to reach a region overlapping the gap 35CT of the insulating film 40 or the reflective electrode 35, and further a region overlapping the reflective electrode 35 of the adjacent organic EL element 30B. On the other hand, the organic EL device 100B of the third embodiment has the third insulating film 44 as shown in FIGS. 10A and 10B, so that the optical path adjustment layer 38 is adjacent to the organic EL element. The reflective electrode 35 can be disposed so as to extend from a region overlapping the reflective electrode 35 of the organic EL element 30R to a region overlapping a part of the embedded insulating film 40 without overlapping the reflective electrode 35B. Therefore, a region where the reflective electrode 35 and the optical path adjustment layer 38 of the organic EL element 30B overlap is unnecessary. Here, although the description has been made of the pixel 20B and the pixel 20R, the same is true between the pixel 20R and the pixel 20G and between the pixel 20G and the pixel 20B. Therefore, the area not contributing to light emission can be reduced, and the aperture ratio of each pixel 20 can be increased.

(Electronics)
FIG. 12 is a schematic view showing a head mounted display 1000 as an example of the electronic apparatus provided with the organic EL device 100. As shown in FIG.
As shown in FIG. 12, the head mounted display 1000 has two display parts 1001 provided corresponding to the left and right eyes. The observer M can see characters and images displayed on the display unit 1001 by wearing the head mounted display 1000 on the head like glasses. For example, when an image in which parallax is taken into consideration is displayed on the left and right display units 1001, it is possible to enjoy watching a stereoscopic image.

  The organic EL device 100 is used for the display unit 1001. In the organic EL device 100, the operation reliability of the organic EL element 30 described above can be improved, and the yield can be further improved. Therefore, by mounting the organic EL device 100 on the display unit 1001, it is possible to provide a head mounted display 1000 of high quality display in which the occurrence of point defects is suppressed.

In addition, this invention is not necessarily limited to the thing of the said embodiment, It is possible to add a various change in the range which does not deviate from the meaning of this invention.
Specifically, the electro-optical device to which the present invention is applied is not limited to the organic EL device including the organic EL device as the above-described light emitting device, and includes, for example, a self-luminous light emitting device such as an inorganic EL device or LED. The present invention can be widely applied to electro-optical devices.

  The electronic device to which the present invention is applied is not limited to the above-described head mounted display, and, for example, the present invention can be applied to a head up display, an electronic view finder of a digital camera, a display unit such as a portable information terminal or a navigator. An electronic apparatus using the applied electro-optical device can be given.

  DESCRIPTION OF SYMBOLS 10 ... Element board | substrate 20 (20B, 20G, 20R) ... Pixel 28 ... 1st contact electrode 30 (30B, 30G, 30R) ... Organic EL element (light emitting element) 31 ... Pixel electrode (1st electrode) 32 ... Light emission Functional layer (light emitting layer) 33 ... Counter electrode (second electrode) 34 ... Interlayer insulating layer (insulating layer) 35 ... Reflective electrode 35CT ... Gap 36 ... Increasing reflection layer 37 ... Protective layer 38 ... Optical path adjusting layer 39 ... First Insulating film 39a ... Recess 40 ... Embedded insulating film 41 ... Second contact electrode 41a ... First contact part 41b ... Second contact part 41CT ... Contact hole 42 ... Second insulating film 43 ... Mask layer 44 ... First 3 Insulating film E ... Display area 100, 100A, 100B ... Organic EL device (electro-optical device) 110 ... Pixel circuit 124 ... Transistor 1000 ... Head-mounted display (electronic device)

Claims (7)

An element substrate including a display area in which a plurality of pixels are arranged in a matrix;
The element substrate includes, for each of the pixels, a light emitting element and a transistor for driving the light emitting element.
The light emitting element is disposed on the transistor via an insulating layer, and includes a reflective electrode, a protective layer, an optical path adjustment layer, a first electrode, a light emitting layer, and a second electrode. Has a laminated structure,
The reflective electrode is divided for each pixel and disposed.
The transistor and the reflective electrode are electrically connected via a first contact electrode disposed through the insulating layer.
The reflective electrode and the first electrode are electrically connected via a second contact electrode disposed through the protective layer.
A gap is formed between each of the reflective electrodes arranged separately for each pixel,
The protective layer covers the surface on which the reflective electrode is disposed, and includes an insulating film having a recess formed inside the gap, and a buried insulating film embedded in the recess. An electro-optical device.   The said optical path adjustment layer is arrange | positioned so that the edge part of at least one part may be located on the surface of the said insulating film while covering the surface top of the said buried insulating film. Electro-optic device. The insulating film contains silicon nitride,
The electro-optical device according to claim 1, wherein the optical path adjustment layer contains silicon oxide. A contact hole is formed through the light path adjustment layer and the protective layer.
The second contact electrode is connected to the first contact portion connected to the reflective electrode in a state of being buried in the contact hole, and connected to the first electrode in a state of being disposed on the surface of the protective layer The electro-optical device according to any one of claims 1 to 3, further comprising a second contact portion.   5. The electro-optical device according to claim 4, wherein an end of at least a part of the light path adjustment layer is located on a surface of the second contact portion.   The electro-optical device according to any one of claims 1 to 5, wherein a reflection enhancing layer is disposed on the surface of the reflection electrode. An electronic apparatus comprising the electro-optical device according to any one of claims 1-6.

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