JP6252590B2 - ORGANIC ELECTROLUMINESCENT ELEMENT AND METHOD FOR PRODUCING ORGANIC ELECTROLUMINESCENT ELEMENT - Google Patents

Description

  The present invention relates to organic electroluminescence and a method for producing an organic electroluminescence element. In particular, the present invention relates to an organic electroluminescent element having a light emitting pattern of two or more colors without limitation on a light emitting material to be used, and a method for manufacturing an organic electroluminescent element for manufacturing such an organic electroluminescent element.

In recent years, organic light emitting devices have attracted attention as thin light emitting materials.
Organic light-emitting elements (hereinafter also referred to as “organic EL elements”) using organic electroluminescence (EL) are thin-film complete solids that can emit light at a low voltage of about several volts to several tens of volts. It is an element and has many excellent features such as high brightness, high luminous efficiency, thinness, and light weight. For this reason, it has been attracting attention in recent years as surface light emitters such as backlights for various displays, display boards such as signboards and emergency lights, and illumination light sources.

  Such an organic EL element has a configuration in which a light emitting layer made of an organic material is disposed between two electrodes, and emitted light generated in the light emitting layer passes through the electrode and is extracted outside. For this reason, at least one of the two electrodes is configured as a transparent electrode, and emitted light is extracted from the transparent electrode side. In addition, the organic EL element can obtain high luminance with low power, and is excellent in terms of visibility, response speed, life, and power consumption.

Here, in such an organic EL element, the organic functional layer laminated on the glass substrate is irradiated with ultraviolet rays, and the irradiated portion is deteriorated to form a non-light emitting region, and the organic EL having a light emitting pattern. A method for manufacturing an element has been proposed (see, for example, Patent Document 1 and Patent Document 2).
Further, when the pattern is formed by irradiating the organic EL element with ultraviolet rays, a light emission pattern having multi-tone light emission luminance can be formed by changing the amount of irradiation light.

However, since most organic materials used in organic EL elements have an absorption peak in the ultraviolet region, when an organic EL element in which a plurality of light emitting layers having different emission colors is irradiated with ultraviolet light, ultraviolet light is emitted from all the light emitting layers. The region irradiated with ceases to emit light, and the plurality of light emitting layers cannot be selectively turned off. Therefore, even if two or more light emitting layers having different emission colors are stacked, a light emission pattern having two or more colors cannot be formed. A method of irradiating with ultraviolet rays every time one light emitting layer having a different emission color is formed is also considered, but this is not preferable because the manufacturing process becomes complicated.
Further, when the organic EL element is formed by laminating a light emitting layer on a resin base material, the resin base material itself also has an absorption peak in the ultraviolet region. There is also a problem.

On the other hand, Patent Document 3 discloses a technique for isomerizing molecules by heating to change the luminescent color of the luminescent material.
In Patent Document 4, the glass transition point is heated by utilizing the difference in glass transition point between the host material contained in the first light-emitting layer and the host material contained in the second light-emitting layer. A technique for changing the luminance of only a light emitting layer containing a host material having a low point is disclosed.

  However, the techniques described in Patent Documents 3 and 4 have a problem in that a material used as a light emitting material is limited, and a light emitting material with better light emission characteristics cannot be applied. Further, although it is possible to form two-color light emission patterns, it is difficult to form more light emission patterns.

Japanese Patent No. 2793373 JP 2012-28335 A Japanese Patent No. 3,855,587 Japanese Patent No. 4855286

  An object of the present invention has been made in view of the above problems and situations, and there is no limitation on the light emitting material used, and an organic electroluminescence element having a light emission pattern of two or more colors, and such an organic electroluminescence element. It is providing the manufacturing method of the organic electroluminescent element to manufacture.

As a result of examining the cause of the above-mentioned problem in order to solve the above-mentioned problem according to the present invention, a plurality of light-emitting layers having different light emission colors are sandwiched between a pair of electrodes, and at least one of the plurality of light-emitting layers, It contains a light-to-heat conversion material that absorbs light and converts it into heat, is irradiated with light having a wavelength corresponding to the maximum absorption wavelength of the light-to-heat conversion material, and the light-emitting layer containing the light-to-heat conversion material is heated to emit light It has been found that by using an organic electroluminescence element having a function changed and a light emission pattern formed, there is no limitation on the light emitting material used, and an organic electroluminescence element having a light emission pattern of two or more colors can be provided.
That is, the subject concerning this invention is solved by the following means.

1. An organic electroluminescence element in which a plurality of light emitting layers having different emission colors are sandwiched between a pair of electrodes,
At least one of the light emitting layers contains a light-to-heat conversion material that absorbs light and converts it into heat,
The light emitting layer containing the light-to-heat conversion material is heated by irradiation with light having a wavelength corresponding to the maximum absorption wavelength of the light-to-heat conversion material, so that the light-emitting function is changed and a light-emitting pattern is formed. An organic electroluminescence device characterized.

  2. 2. The organic electroluminescence device according to item 1, wherein the photothermal conversion material has a maximum absorption wavelength in a wavelength range of 750 to 1200 nm.

  3. 3. The organic electroluminescence element according to item 1 or 2, wherein the photothermal conversion material is a nonionic material.

4). Each of the plurality of light emitting layers contains the photothermal conversion material having a different maximum absorption wavelength,
By irradiating each of the light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material contained in each of the plurality of light emitting layers, each of the plurality of light emitting layers is heated to change a light emitting function, The organic electroluminescence element according to any one of items 1 to 3, wherein a plurality of light emission patterns are formed.

5. A lamination step of laminating and forming a plurality of light emitting layers having different emission colors, including at least one light emitting layer containing a photothermal conversion material that absorbs light and converts it into heat between a pair of electrodes;
By irradiating light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material, the light emitting layer containing the photothermal conversion material is heated to change the light emission function, thereby forming a light emission pattern; and The manufacturing method of the organic electroluminescent element characterized by having.

According to the present invention, there is no limitation on the light emitting material used, and an organic electroluminescent device having a light emission pattern of two or more colors, and a method for manufacturing an organic electroluminescent device for manufacturing such an organic electroluminescent device are provided. Can do.
The expression mechanism or action mechanism of the effect of the present invention is as follows.
The light emitting layer of the organic electroluminescence element contains a photothermal conversion material, and the light emitting layer containing the photothermal conversion material is heated to emit light when irradiated with light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material. Since the function is changed and the light emitting pattern is formed, the pattern can be selectively formed only on the light emitting layer containing the photothermal conversion material among the plurality of light emitting layers. Thus, since a light emission pattern can be selectively formed with respect to a specific light emitting layer, it can be set as the organic EL element which has a light emission pattern of 2 or more colors. Moreover, since only the photothermal conversion material is contained in the light emitting layer, there is no restriction | limiting in the light emitting material used for a light emitting layer.

Schematic sectional view showing an example of the configuration of the organic electroluminescence element of the present invention The figure which shows the area | region where the light of an organic electroluminescent element is irradiated The figure which shows the area | region where the light of an organic electroluminescent element is irradiated The figure which shows the area | region where the light of an organic electroluminescent element is irradiated The figure which shows the light emission pattern 1 of the organic electroluminescent element after light irradiation The figure which shows the light emission pattern 2 of the organic electroluminescent element after light irradiation The figure which shows the light emission pattern 3 of the organic electroluminescent element after light irradiation

In the organic electroluminescence element of the present invention (hereinafter also referred to as an organic EL element), a plurality of light emitting layers having different emission colors are sandwiched between a pair of electrodes, and at least one of the plurality of light emitting layers has a light emitting layer. A light-to-heat conversion material that absorbs light and converts it into heat, and the light-emitting layer containing the light-to-heat conversion material is heated by being irradiated with light having a wavelength corresponding to the maximum absorption wavelength of the light-to-heat conversion material The light emission function is changed, and a light emission pattern is formed. This feature is a technical feature common to the inventions according to claims 1 to 5.
In the present invention, it is preferable that the photothermal conversion material has a maximum absorption wavelength within a wavelength range of 750 to 1200 nm. Thus, by irradiating the organic EL element with light, various materials constituting the organic EL element are not deteriorated by ultraviolet rays or visible light, so that the pattern can be formed with high accuracy.
In the present invention, the photothermal conversion material is preferably a nonionic material. Thereby, when forming a light emitting layer by a vapor deposition method, stability of the photothermal conversion material with respect to a vapor deposition method can be improved. Moreover, such a photothermal conversion material is excellent in availability.
Moreover, this invention contains the said photothermal conversion material from which maximum absorption wavelength differs in each of these light emitting layers, and respond | corresponds to the maximum absorption wavelength of the said photothermal conversion material contained in each of these light emitting layers. It is preferable that each of the plurality of light emitting layers is heated by being irradiated with light having a wavelength, the light emitting function is changed, and a light emitting pattern is formed. Thereby, a separate light emission pattern can be formed for each of the plurality of light emitting layers provided in the organic EL element.

  Hereinafter, the present invention, its components, and modes and modes for carrying out the present invention will be described in detail. In addition, in this application, "-" showing a numerical range is used by the meaning containing the numerical value described before and behind that as a lower limit and an upper limit.

  In the organic EL element of the present invention, a plurality of light emitting layers having different emission colors are sandwiched between a pair of electrodes, and at least one of the plurality of light emitting layers absorbs light and converts it into heat. The light emitting layer containing the light-to-heat conversion material is irradiated with light having a wavelength corresponding to the maximum absorption wavelength of the light-to-heat conversion material, whereby the light-emitting layer is heated to change the light-emitting function, A light emitting pattern is formed.

Here, in the present invention, “light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material” refers to light including a wavelength component within a wavelength range of ± 15 nm from the maximum absorption wavelength of the photothermal conversion material.
In the present invention, the “pattern” means a design (design or pattern in the figure), characters, images, etc. displayed by the organic EL element. “Patterning” means providing these pattern display functions.
In the present invention, the “light emission pattern” refers to the light emission intensity (luminance) depending on the position of the light emitting surface based on a predetermined design (pattern or pattern in the figure), characters, images, etc. when the organic EL element emits light. A source having a function of displaying a predetermined design (pattern or pattern in the figure), characters, images, or the like previously formed (applied) to the organic EL element in order to emit light by changing.

  Hereinafter, the detail of the structure of the organic EL element of this invention and the pattern formation method of the organic EL element of this invention are demonstrated.

<< Structure of organic electroluminescence element >>
The organic EL device according to the present invention can take various configurations, an example of which is shown in FIG.
FIG. 1 is a schematic cross-sectional view showing an example of the configuration of the organic EL element 100 of the present invention.

  As shown in FIG. 1, in the organic EL element 100 of the present invention, an organic functional layer (light emitting functional layer) unit configured using a first electrode (transparent electrode) 1 and an organic material from the resin substrate 13 side. 3 and the second electrode (counter electrode) 5a are stacked in this order. An extraction electrode 16 is provided at the end of the first electrode 1 (electrode layer 1b). The first electrode 1 and an external power source (not shown) are electrically connected via the extraction electrode 16. The organic EL element 100 is configured to extract the generated light (emission light h) from at least the light extraction surface 13a on the resin substrate 13 side.

  Further, the layer structure of the organic EL element 100 is not particularly limited, and may be a general layer structure. Although an example of a structure of an organic functional layer is shown below, this invention is not limited to these. In the organic EL element of the present invention, the organic functional layer unit 3 includes a plurality of light emitting layers having different emission colors.

(I) Hole injection transport layer / light emitting layer / electron injection transport layer (ii) Hole injection transport layer / first light emitting layer / second light emitting layer / electron injection transport layer (iii) Hole injection transport layer / first Light emitting layer / intermediate layer / second light emitting layer / electron injecting and transporting layer (iv) Hole injecting and transporting layer / light emitting layer / hole blocking layer / electron injecting and transporting layer (v) Hole injecting and transporting layer / electron blocking layer / light emission Layer / hole blocking layer / electron injection transport layer (vi) hole injection layer / hole transport layer / light emitting layer / electron transport layer / electron injection layer (vii) hole injection layer / hole transport layer / light emitting layer / Hole blocking layer / electron transport layer / electron injection layer (viii) Hole injection layer / hole transport layer / electron blocking layer / light emitting layer / hole blocking layer / electron transport layer / electron injection layer

The configuration of the organic EL element 100 shown in FIG. 1 will be described as an example for details.
In the specific configuration shown in FIG. 1, the first electrode 1 functions as an anode (that is, an anode), and the second electrode 5a functions as a cathode (that is, a cathode). In this case, for example, in the organic functional layer unit 3, the hole injection layer 3a / the hole transport layer 3b / the light emitting layer 3c / the electron transport layer 3d / the electron injection layer 3e are laminated in order from the first electrode 1 side which is the anode. Although the configuration is exemplified, it is essential to have the light emitting layer 3c configured using at least an organic material. The hole injection layer 3a and the hole transport layer 3b may be provided as a hole transport injection layer. Similarly, the electron transport layer 3d and the electron injection layer 3e may be provided as an electron transport injection layer. Of these organic functional layer units 3, for example, the electron injection layer 3e may be made of an inorganic material.

  In addition to these layers, the organic functional layer unit 3 may have a hole blocking layer, an electron blocking layer, or the like laminated as necessary. Furthermore, the light emitting layer 3c may have a structure in which each color light emitting layer that generates emitted light in each wavelength region is laminated, and each of these color light emitting layers is laminated via a non-light emitting intermediate layer. The intermediate layer may function as a hole blocking layer and an electron blocking layer. Furthermore, the second electrode 5a, which is a cathode, may have a laminated structure as necessary. In such a configuration, only the portion where the organic functional layer unit 3 is sandwiched between the first electrode 1 and the second electrode 5 a becomes a light emitting region in the organic EL element 100.

  In the layer configuration as described above, the auxiliary electrode 15 may be provided in contact with the electrode layer 1 b of the first electrode 1 for the purpose of reducing the resistance of the first electrode 1.

  The organic EL element 100 configured as described above is sealed on the resin substrate 13 with a sealing material 17 to be described later for the purpose of preventing deterioration of the organic functional layer unit 3 configured using an organic material or the like. It has been stopped. The sealing material 17 is fixed to the resin substrate 13 with an adhesive 19. However, the terminal portions of the first electrode 1 (extraction electrode 16) and the second electrode 5a are exposed from the sealing material 17 while being insulated from each other by the organic functional layer unit 3 on the resin substrate 13. It shall be provided.

  In addition, the organic EL element 100 of the present invention is configured such that the light irradiation portion is a non-light emitting region in any one of at least two light emitting layers by irradiating a predetermined region of the organic functional layer unit 3 with light. It is what has been.

<Resin substrate>
In the resin substrate (hereinafter also referred to as a substrate, a base material, a support, etc.) applied to the organic EL element of the present invention, there is no particular limitation on the type of plastic or the like, and it may be transparent or opaque. good. When extracting light from the resin substrate side, the resin substrate is preferably transparent. The transparent resin substrate preferably used is a transparent resin film that can give flexibility to the organic EL element.

  The resin substrate 13 in FIG. 1 is basically composed of a resin base material as a support and one or more gas barrier layers having a refractive index in the range of 1.4 to 1.7. Is preferred.

(1) Resin base material The resin base material which concerns on this invention can use a conventionally well-known resin film base material without a restriction | limiting in particular. The resin substrate preferably used in the present invention preferably has gas barrier properties such as moisture resistance and gas permeation resistance required for the organic EL element.

  In the present invention, when the resin substrate 13 side of the organic EL element 100 is a light emitting surface, a material having translucency for visible light is used for the resin base material. In this case, the light transmittance is preferably 70% or more, more preferably 75% or more, and further preferably 80% or more.

  The resin base material preferably has flexibility. The term “flexibility” as used herein means that no cracks or the like occur before and after winding with a φ (diameter) 50 mm roll and winding with a constant tension, and more preferably with a φ 30 mm roll. Say.

  In the present invention, the resin base material is a conventionally known base material, for example, an acrylic resin such as acrylic ester, methacrylic ester, polymethyl methacrylate (PMMA), polyethylene terephthalate (PET), polybutylene terephthalate, polyethylene naphthalate. Phthalate (PEN), polycarbonate (PC), polyarylate, polyvinyl chloride (PVC), polyethylene (PE), polypropylene (PP), polystyrene (PS), nylon (Ny), aromatic polyamide, polyether ether ketone, polysulfone , Polyether sulfonate, polyimide, polyetherimide, polyolefin, epoxy resin, and other resin films, and cycloolefin-based and cellulose ester-based films can also be used. In addition, a heat-resistant transparent film (product name Sila-DEC, manufactured by Chisso Corporation) having a silsesquioxane having an organic-inorganic hybrid structure as a basic skeleton, and a resin film formed by laminating two or more layers of the resin material, etc. Can be mentioned.

Among these, as the resin base material, a resin film such as PET, PEN, PC, acrylic resin is preferably used from the viewpoint of cost and availability.
Among these, a biaxially stretched polyethylene terephthalate film and a biaxially stretched polyethylene naphthalate film are preferable from the viewpoints of transparency, heat resistance, ease of handling, strength, and cost.
Furthermore, in order to suppress the shrinkage at the time of thermal expansion to the maximum, a low heat recovery processed product subjected to a treatment such as thermal annealing is most preferable.

  As for the thickness of a resin base material, 10-500 micrometers is preferable, More preferably, it is 20-250 micrometers, More preferably, it is 30-150 micrometers. When the thickness of the resin base material is in the range of 10 to 500 μm, a stable gas barrier property can be obtained, and it is suitable for conveyance in a roll-to-roll system.

(2) Gas barrier layer (2.1) Characteristics and formation method In the resin substrate according to the present invention, the resin base material of the resin substrate 13 has one or more layers having a refractive index in the range of 1.4 to 1.7. The gas barrier layer (low refractive index layer) may be provided. As such a gas barrier layer, a known material can be used without particular limitation, and a film made of an inorganic material or an organic material or a hybrid film combining these films may be used. The gas barrier layer has a water vapor permeability (25 ± 0.5 ° C., relative humidity 90 ± 2% RH) measured by a method according to JIS-K-7129-1992, 0.01 g / (m ² · 24. The gas barrier film is preferably the following gas barrier film, and the oxygen permeability measured by a method according to JIS-K-7126-1987 is 1 × 10 ⁻³ ml / (m ² · 24 hours · atm. ) Hereinafter, a high gas barrier film having a water vapor permeability of 1 × 10 ⁻⁵ g / (m ² · 24 hours) or less is more preferable.

  As a material for forming such a gas barrier layer, any material may be used as long as it has a function of suppressing intrusion of elements that cause deterioration of elements such as moisture and oxygen. For example, silicon oxide, silicon dioxide, silicon nitride, or the like is used. Can do. Furthermore, in order to improve the weakness of the gas barrier layer, an organic layer made of an organic material may be laminated on these inorganic layers as a stress relaxation layer. Although there is no restriction | limiting in particular about the lamination order of an inorganic layer and an organic layer, The structure which laminates | stacks both alternately several times is preferable.

  The method for forming the gas barrier layer is not particularly limited. For example, the vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used, but the method based on the atmospheric pressure plasma polymerization method described in JP-A-2004-68143 is particularly preferable.

(2.2) Formation method by inorganic precursor compound Moreover, after forming the coating film by apply | coating the coating liquid containing an inorganic precursor compound of at least 1 layer as a gas barrier layer on a resin base material, the said A method of forming an inorganic layer by subjecting the coating film to a modification treatment with an excimer lamp or the like may be used.

  As a coating method, a conventionally known wet coating method can be applied. For example, a roller coating method, a flow coating method, an ink jet method, a spray coating method, a printing method, a dip coating method, a casting film forming method, a bar coating method. Method, gravure printing method and the like.

  The thickness of the coating film can be appropriately set according to the purpose. For example, the thickness of the coating film is preferably in the range of 0.001 to 10 μm, more preferably in the range of 0.01 to 10 μm, and most preferably 0.03 to 1 μm after drying. It is preferable to set so as to be within the range of.

  The inorganic precursor compound used in the present invention is not particularly limited as long as it is a compound capable of forming a metal oxide, a metal nitride, or a metal oxynitride by irradiation with vacuum ultraviolet rays (excimer light) under a specific atmosphere. In the present invention, the compound suitable for forming the gas barrier layer is preferably a compound that can be modified at a relatively low temperature as described in JP-A-8-112879.

  Specifically, polysiloxane (including polysilsesquioxane) having Si—O—Si bond, polysilazane having Si—N—Si bond, both Si—O—Si bond and Si—N—Si bond And polysiloxazan containing These can be used in combination of two or more. Moreover, it can be used even if different compounds are sequentially laminated or simultaneously laminated.

<< First electrode: Transparent electrode >>
As the first electrode constituting the organic EL element of the present invention, all electrodes that can be used for the organic EL element can be generally applied. Specifically, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, ITO, ZnO, TiO ₂ , An oxide semiconductor such as SnO ₂ can be given.

  In the present invention, the first electrode is preferably a transparent electrode.

  For example, as shown in FIG. 1, it is preferable that the first electrode 1 has a two-layer structure in which a base layer 1a and an electrode layer 1b formed thereon are sequentially laminated from the resin substrate 13 side. The electrode layer 1b is a layer formed using, for example, silver or an alloy containing silver as a main component, and the base layer 1a is a layer formed using, for example, a compound containing nitrogen atoms.

  The term “transparent” as used in the first electrode 1 means that the light transmittance at a wavelength of 550 nm is 50% or more. Moreover, the main component as used in the electrode layer 1b means that content in the electrode layer 1b is 98 mass% or more.

(1) Underlayer The underlayer 1a is a layer provided on the resin substrate 13 side of the electrode layer 1b. The material constituting the underlayer 1a is not particularly limited as long as it can suppress the aggregation of silver when forming the electrode layer 1b made of silver or an alloy containing silver as a main component. And nitrogen-containing compounds containing a nitrogen atom.

  When the underlayer 1a is made of a low refractive index material (refractive index less than 1.7), the upper limit of the layer thickness needs to be less than 50 nm, preferably less than 30 nm, and preferably less than 10 nm. Is more preferable, and it is especially preferable that it is less than 5 nm. By making the layer thickness less than 50 nm, optical loss can be minimized. On the other hand, the lower limit of the layer thickness is required to be 0.05 nm or more, preferably 0.1 nm or more, and particularly preferably 0.3 nm or more. By setting the layer thickness to 0.05 nm or more, it is possible to make the underlayer 1a uniform and to make the effect (inhibition of aggregation of silver) uniform.

  When the underlayer 1a is made of a high refractive index material (refractive index of 1.7 or more), the upper limit of the layer thickness is not particularly limited, and the lower limit of the layer thickness is the same as that of the low refractive index material. is there.

  However, as a simple function of the underlayer 1a, it is sufficient that the base layer 1a is formed with a required film thickness that allows uniform film formation.

  As a method for forming the underlying layer 1a, for example, a method using a wet process such as a coating method, an inkjet method, a coating method, a dip method, a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, a CVD method, etc. Examples include a method using a dry process. Among these, the vapor deposition method is preferably applied.

  The compound containing a nitrogen atom constituting the underlayer 1a is not particularly limited as long as it is a compound containing a nitrogen atom in the molecule, but is preferably a compound having a heterocycle having a nitrogen atom as a heteroatom. . Examples of the heterocycle having a nitrogen atom as a hetero atom include, for example, aziridine, azirine, azetidine, azeto, azolidine, azole, azinane, pyridine, azepan, azepine, imidazole, pyrazole, oxazole, thiazole, imidazoline, pyrazine, morpholine, thiazine, Examples include indole, isoindole, benzimidazole, purine, quinoline, isoquinoline, quinoxaline, cinnoline, pteridine, acridine, carbazole, benzo-C-cinnoline, porphyrin, chlorin, choline and the like.

(2) Electrode layer The electrode layer 1b is a layer comprised using silver or the alloy which has silver as a main component, Comprising: It forms into a film on the base layer 1a.

  As a method for forming such an electrode layer 1b, for example, a method using a wet process such as a coating method, an inkjet method, a coating method, a dip method, a vapor deposition method (resistance heating, EB method, etc.), a sputtering method, a CVD method, etc. And a method using a dry process such as a method. Among these, the vapor deposition method is preferably applied.

  In addition, the electrode layer 1b is formed on the base layer 1a so that it is sufficiently conductive even without high-temperature annealing after the electrode layer 1b is formed. Alternatively, high-temperature annealing treatment or the like after film formation may be performed.

  Examples of the alloy mainly composed of silver (Ag) constituting the electrode layer 1b include silver magnesium (AgMg), silver copper (AgCu), silver palladium (AgPd), silver palladium copper (AgPdCu), and silver indium (AgIn). ) And the like.

  The electrode layer 1b as described above may have a structure in which silver or an alloy layer mainly composed of silver is divided into a plurality of layers as necessary.

  Furthermore, the electrode layer 1b preferably has a layer thickness in the range of 4 to 9 nm. When the layer thickness is less than 9 nm, the absorption component or reflection component of the layer is small, and the transmittance of the first electrode 1 is increased. Further, when the layer thickness is thicker than 4 nm, the conductivity of the layer can be sufficiently secured.

  The first electrode 1 having a laminated structure composed of the base layer 1a and the electrode layer 1b formed thereon is covered with a protective film at the upper part of the electrode layer 1b or another electrode layer. May be laminated. In this case, it is preferable that the protective film and the other electrode layer have light transmittance so that the light transmittance of the first electrode 1 is not impaired.

《Organic functional layer unit》
(1) Light emitting layer The organic functional layer unit 3 includes at least a light emitting layer 3c.
The organic EL device of the present invention includes a plurality of light emitting layers having different light emission colors, but it is sufficient that the light emitting layers have at least two different light emission colors. You may further provide the light emitting layer of the same luminescent color. For example, the organic EL element may include one blue light-emitting layer and one red light-emitting layer, or may include two blue light-emitting layers and one red light-emitting layer.

  The light emitting layer 3c used in the present invention preferably contains a phosphorescent light emitting compound as a light emitting material. Note that a fluorescent material may be used as the light emitting material, or a phosphorescent light emitting compound and a fluorescent material may be used in combination.

  The light emitting layer 3c is a layer that emits light by recombination of electrons injected from the electrode or the electron transport layer 3d and holes injected from the hole transport layer 3b, and the light emitting portion is a layer of the light emitting layer 3c. Even within, it may be an interface between the light emitting layer 3c and an adjacent layer.

  There is no restriction | limiting in particular in the structure as such a light emitting layer 3c, if the light emitting material contained satisfies the light emission requirements. There may be a plurality of layers having the same emission spectrum and emission maximum wavelength. In this case, it is preferable to have a non-light emitting intermediate layer (not shown) between the light emitting layers 3c.

  The total thickness of the light emitting layer 3c is preferably in the range of 1 to 100 nm, and more preferably in the range of 1 to 40 nm because a lower driving voltage can be obtained.

  In addition, the sum total of the layer thickness of the light emitting layer 3c is a layer thickness also including the said intermediate | middle layer, when a nonluminous intermediate | middle layer exists between the light emitting layers 3c. However, in the case of a so-called tandem element in which a plurality of light emitting layer units are stacked via an intermediate connector layer, the light emitting layer here refers to a light emitting layer portion in each light emitting unit. As the material for the intermediate connector layer, an electron transport material doped with an N-type material, an alkali metal, an alkaline earth metal, a metal complex thereof, or the like can be used.

  In the case of the light emitting layer 3c having a configuration in which a plurality of layers are laminated, the thickness of each light emitting layer is preferably adjusted within a range of 1 to 50 nm, and more preferably adjusted within a range of 1 to 20 nm. preferable. When the plurality of stacked light emitting layers correspond to the respective emission colors of blue, green, and red, there is no particular limitation on the relationship between the thicknesses of the blue, green, and red light emitting layers.

  The light emitting layer 3c as described above is formed by forming a known light emitting material or host compound by a known thin film forming method such as a vacuum deposition method, a spin coating method, a casting method, an LB method, an ink jet method, or the like. be able to.

  The light emitting layer 3c may be a mixture of a plurality of light emitting materials.

  As a structure of the light emitting layer 3c, it is preferable to contain a host compound (also referred to as a light emitting host), a light emitting material (also referred to as a light emitting dopant), and a photothermal conversion material, and to emit light from the light emitting material.

  Examples of the light emitting dopant applicable to the present invention include, for example, International Publication No. 2005/076380, International Publication No. 2010/032663, International Publication No. 2008/140115, International Publication No. 2007/052431, International Publication No. 2011/1. No. 134013, International Publication No. 2011/157339, International Publication No. 2010/086089, International Publication No. 2009/113646, International Publication No. 2012/020327, International Publication No. 2011/051404, International Publication No. 2011/004639. International Publication No. 2011-073149, JP2012-069737, JP2009-114086, JP2003-81988, JP2002-302671, JP2002-363552, etc. The described compound It can gel.

  Examples of the host compound include JP-A Nos. 2001-257076, 2002-308855, 2001-313179, 2002-319491, 2001-357777, and 2002-334786. Gazette, 2002-8860, 2002-334787, 2002-15871, 2002-334788, 2002-43056, 2002-334789, 2002-75645 2002-338579, 2002-105445, 2002-343568, 2002-141173, 2002-352957, 2002-203683, 2002-363227 2002-231453, 2003-3165, 2002-234888, 2003-27048, 2002-255934, 2002-260861, 2002-280183, 2002-299060, 2002-302516, 2002-305083, 2002-305084, 2002-308837, US 2003/0175553, US 2006 No. 0280965, U.S. Patent Publication No. 2005/0112407, U.S. Patent Publication No. 2009/0017330, U.S. Patent Publication No. 2009/0030202, U.S. Patent Publication No. 2005/238919, International Publication No. 2001/039234, International Publication No. 2009/021126, International Publication No. 2008/056746, International Publication No. 2004/093207, International Publication No. 2005/089025, International Publication No. 2007/063796, International Publication No. 2007/063754, International Publication No. 2004/107822, International Publication No. 2005/030900, International Publication No. 2006/114966, International Publication No. 2009/086028, International Publication No. 2009/003898, International Publication No. 2012 No. 023947, JP 2008-074939 A, JP 2007-254297 A, EP 2034538, and the like.

(1.1) Photothermal conversion material The photothermal conversion material contained in at least one of the plurality of light emitting layers of the organic EL device of the present invention is a material that absorbs light and converts it into heat. By irradiating the organic EL element with light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material, the photothermal conversion material is heated, and the luminescent material of the light emitting layer containing the photothermal conversion material is heated to the glass transition point or higher. And converted from an amorphous layer to a crystalline layer. Thereby, the said light irradiation area | region becomes non-light-emission among the light emitting layers containing a photothermal conversion material. The maximum absorption wavelength of the photothermal conversion material is preferably within a wavelength range of 750 nm to 1200 nm in order to reduce the influence on the emission color of the organic EL element.

  The photothermal conversion material preferably does not absorb the wavelength component in the visible light region, but may be slightly colored green or gray.

  When the light emitting layer is formed by a vapor deposition method, various organic or inorganic dyes, pigments, metals, metal complexes, metal oxides, metal carbides, metal borides and the like are used as the photothermal conversion material.

  Examples of organic materials used as the photothermal conversion material include cyanine compounds, phthalocyanine compounds, naphthalocyanine compounds, merocyanine compounds, azo compounds, polymethine compounds, squarylium compounds, croconium compounds, pyrylium compounds, Examples include thiopyrylium compounds, perylene compounds, quartalylene compounds, diimmonium compounds, pyrrolopyrrole compounds, dithiol metal complexes, and dithiolene metal complexes. These 1 type or 2 or more types can be used as needed.

  As the photothermal conversion material, a nonionic material is preferable from the viewpoint of excellent stability to the vapor deposition method. Examples of nonionic photothermal conversion materials include phthalocyanine compounds, naphthalocyanine compounds, perylene compounds, and quartarylene compounds. As commercially available materials, “Lumogen IR-765” is used as a quartarylene compound, “Lumogen IR-788” is used as a perylene compound (both are trade names, manufactured by BASF), and “Excolor IR-” is used as a phthalocyanine compound. 10 "," EEX COLOR IR-12 "," EEX COLOR IR-14 "," EEX COLOR IR-20 "," EEX COLOR HA-1 "," EEX COLOR HA-14 "(all Trade name, manufactured by Nippon Shokubai Co., Ltd.), “PRO-JET800NP”, “PRO-JET830NP” (both trade names, manufactured by FUJIFILM Corporation), “YKR-3070”, “YKR-3080” (both trade names, Yamamoto) Kasei Co., Ltd.).

  These photothermal conversion materials are preferably contained in the light emitting layer in the range of 0.05 to 10% by volume, and particularly preferably in the range of 0.1 to 5% by volume. By setting the content of the photothermal conversion material to 0.05% by volume or more, the light emitting function of the light emitting layer can be sufficiently changed by irradiating the photothermal conversion material with light, and by setting the content to 10% by volume or less. It is easy to adjust the temperature of the light emitting layer when the photothermal conversion material is irradiated with light.

  Moreover, you may make the some light emitting layer contain the photothermal conversion material from which maximum absorption wavelength differs, respectively. In this case, light having a wavelength corresponding to the maximum absorption wavelength of each photothermal conversion material contained in each of the plurality of light emitting layers is irradiated. Thereby, a light emission pattern can be selectively formed in each light emitting layer with respect to the organic EL element after sealing. In such a case, it is preferable that the maximum absorption wavelengths of the photothermal conversion materials contained in the respective light emitting layers are separated from each other by 30 nm or more. When the difference in mutual maximum absorption wavelength is less than 30 nm, in the case of a photothermal conversion material having a broad absorption waveform, the light emitting layer irradiated with light may not emit light.

  The type and content of the photothermal conversion material contained in the light emitting layer are preferably in the above-described range, but may be appropriately set according to the layer thickness of the light emitting layer and the light emitting material constituting the light emitting layer. There is no limitation to the above range.

(1.2) Glass Transition Point of Light-Emitting Layer Material The material used for the light-emitting layer of the organic EL device of the present invention preferably has a glass transition point of 100 ° C. or more, more preferably 110, from the viewpoint of storage stability. It is above ℃. When the glass transition point is less than 100 ° C., the luminance tends to decrease during long-term storage, and the lifetime is likely to deteriorate due to the heat inside the device during light emission.
In the present invention, the photothermal conversion material absorbs laser light and is instantaneously heated at a very high temperature. Therefore, even if the light emitting layer is made of a light emitting material having a high glass transition point, pattern formation can be performed, and an organic EL element having a light emitting pattern of two or more colors can be obtained without limitation of the material.

(2) Injection layer The injection layer is a layer provided between the electrode and the light-emitting layer 3c in order to lower the drive voltage or improve the light emission luminance. “The organic EL element and its industrialization front line (November 30, 1998) The details are described in Chapter 2 “Electrode Materials” (pages 123 to 166) of the second edition of “NTT Corporation”), and there are a hole injection layer 3a and an electron injection layer 3e. .

  An injection | pouring layer is a structure layer which can be provided as needed. The hole injection layer 3a may be present between the anode and the light emitting layer 3c or the hole transport layer 3b, and the electron injection layer 3e may be present between the cathode and the light emitting layer 3c or the electron transport layer 3d.

  The details of the hole injection layer 3a are described in JP-A-9-45479, JP-A-9-260062, JP-A-8-288069, and the like. Specific examples thereof include phthalocyanine represented by copper phthalocyanine. Examples thereof include a layer, an oxide layer typified by vanadium oxide, an amorphous carbon layer, and a polymer layer using a conductive polymer such as polyaniline (emeraldine) or polythiophene. Moreover, it is also preferable to use the material described in Japanese translations of PCT publication No. 2003-519432 gazette.

  The details of the electron injection layer 3e are described in JP-A-6-325871, JP-A-9-17574, JP-A-10-74586, and the like, and specifically represented by strontium, aluminum and the like. Examples thereof include a metal layer, an alkali metal halide layer typified by potassium fluoride, an alkaline earth metal compound layer typified by magnesium fluoride, and an oxide layer typified by molybdenum oxide. In the present invention, the electron injection layer 3e is desirably a very thin layer, and the layer thickness is preferably in the range of 1 nm to 10 μm although it depends on the material.

(3) Hole transport layer The hole transport layer 3b is made of a hole transport material having a function of transporting holes, and in a broad sense, the hole injection layer 3a and the electron blocking layer are also included in the hole transport layer 3b. . The hole transport layer 3b can be provided as a single layer or a plurality of layers.

  The hole transport material has any of the characteristics of hole injection or transport and electron barrier properties, and may be either organic or inorganic. For example, triazole derivatives, oxadiazole derivatives, imidazole derivatives, polyarylalkane derivatives, pyrazoline derivatives and pyrazolone derivatives, phenylenediamine derivatives, arylamine derivatives, amino-substituted chalcone derivatives, oxazole derivatives, styrylanthracene derivatives, fluorenone derivatives, hydrazone derivatives, Examples thereof include stilbene derivatives, silazane derivatives, aniline copolymers, and conductive polymer oligomers, particularly thiophene oligomers.

  As the hole transport material, those described above can be used, and it is further preferable to use a porphyrin compound, an aromatic tertiary amine compound and a styrylamine compound, particularly an aromatic tertiary amine compound.

  Representative examples of aromatic tertiary amine compounds and styrylamine compounds include, for example, N, N, N ′, N′-tetraphenyl-4,4′-diaminophenyl; N, N′-diphenyl-N, N '-Bis (3-methylphenyl)-[1,1'-biphenyl] -4,4'-diamine (abbreviation: TPD); 2,2-bis (4-di-p-tolylaminophenyl) propane; 1 , 1-bis (4-di-p-tolylaminophenyl) cyclohexane; N, N, N ′, N′-tetra-p-tolyl-4,4′-diaminobiphenyl; 1,1-bis (4-di -P-tolylaminophenyl) -4-phenylcyclohexane; bis (4-dimethylamino-2-methylphenyl) phenylmethane; bis (4-di-p-tolylaminophenyl) phenylmethane; N, N'-dipheni -N, N'-di (4-methoxyphenyl) -4,4'-diaminobiphenyl; N, N, N ', N'-tetraphenyl-4,4'-diaminodiphenyl ether; 4,4'-bis ( N, N, N-tri (p-tolyl) amine; 4- (di-p-tolylamino) -4 ′-[4- (di-p-tolylamino) styryl] stilbene; N, N-diphenylamino- (2-diphenylvinyl) benzene; 3-methoxy-4'-N, N-diphenylaminostilbenzene; N-phenylcarbazole and further described in US Pat. No. 5,061,569 One having two condensed aromatic rings in the molecule, for example, 4,4′-bis [N- (1-naphthyl) -N-phenylamino] biphenyl (abbreviation: NPD), 4,4 ', 4 "-tris [N- (3-methylphenyl) -N-phenylamino] tril, in which triphenylamine units described in JP-A-4-308688 are linked in three starburst types And phenylamine (abbreviation: MTDATA).

  Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used. In addition, inorganic compounds such as p-type-Si and p-type-SiC can also be used as the hole injection material and the hole transport material.

  JP-A-11-251067, J. Org. Huang et. al. , Applied Physics Letters, 80 (2002), p. A so-called p-type hole transport material as described in 139 can also be used. In the present invention, it is preferable to use these materials because a light-emitting element with higher efficiency can be obtained.

  The hole transport layer 3b is formed by thinning the hole transport material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. be able to. Although there is no restriction | limiting in particular about the layer thickness of the positive hole transport layer 3b, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The hole transport layer 3b may have a single layer structure made of one or more of the above materials.

  Moreover, the transport property can be enhanced by doping impurities into the material of the hole transport layer 3b. Examples thereof include JP-A-4-297076, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like.

(4) Electron Transport Layer The electron transport layer 3d is made of a material having a function of transporting electrons. In a broad sense, the electron transport layer 3e and a hole blocking layer (not shown) are also included in the electron transport layer 3d. The electron transport layer 3d can be provided as a single layer structure or a multi-layer structure.

  In the electron transport layer 3d having a single layer structure and the electron transport layer 3d having a multilayer structure, an electron transport material (also serving as a hole blocking material) constituting a layer portion adjacent to the light emitting layer 3c was injected from the cathode. What is necessary is just to have the function to transmit an electron to the light emitting layer 3c. As such a material, any one of conventionally known compounds can be selected and used. Examples include nitro-substituted fluorene derivatives, diphenylquinone derivatives, thiopyran dioxide derivatives, carbodiimides, fluorenylidenemethane derivatives, anthraquinodimethane, anthrone derivatives, and oxadiazole derivatives. Further, in the above oxadiazole derivative, a thiadiazole derivative in which the oxygen atom of the oxadiazole ring is substituted with a sulfur atom, and a quinoxaline derivative having a quinoxaline ring known as an electron withdrawing group are also used as the material for the electron transport layer 3d. Can do. Furthermore, a polymer material in which these materials are introduced into a polymer chain or these materials are used as a polymer main chain can also be used.

In addition, metal complexes of 8-quinolinol derivatives such as tris (8-quinolinol) aluminum (abbreviation: Alq ₃ ), tris (5,7-dichloro-8-quinolinol) aluminum, tris (5,7-dibromo-8- Quinolinol) aluminum, tris (2-methyl-8-quinolinol) aluminum, tris (5-methyl-8-quinolinol) aluminum, bis (8-quinolinol) zinc (abbreviation: Znq), etc., and the central metal of these metal complexes A metal complex in which In, Mg, Cu, Ca, Sn, Ga, or Pb is replaced can also be used as the material of the electron transport layer 3d.

  In addition, metal-free or metal phthalocyanine, or those having terminal ends substituted with an alkyl group or a sulfonic acid group can be preferably used as the material for the electron transport layer 3d. Further, a distyrylpyrazine derivative exemplified also as a material of the light emitting layer 3c can be used as a material of the electron transport layer 3d, and similarly to the hole injection layer 3a and the hole transport layer 3b, n-type -Si, n An inorganic semiconductor such as type-SiC can also be used as the material of the electron transport layer 3d.

  The electron transport layer 3d can be formed by thinning the above material by a known method such as a vacuum deposition method, a spin coating method, a casting method, a printing method including an ink jet method, or an LB method. Although there is no restriction | limiting in particular about the layer thickness of 3 d of electron carrying layers, Usually, 5 nm-about 5 micrometers, Preferably it is 5-200 nm. The electron transport layer 3d may have a single layer structure composed of one or more of the above materials.

  In addition, the electron transport layer 3d can be doped with an impurity to increase transportability. Examples thereof include JP-A-4-297076, JP-A-10-270172, JP-A-2000-196140, 2001-102175, J.A. Appl. Phys. 95, 5773 (2004), and the like. Furthermore, it is preferable that the electron transport layer 3d contains potassium or a potassium compound. As the potassium compound, for example, potassium fluoride can be used. Thus, when the n property of the electron transport layer 3d is increased, an element with lower power consumption can be manufactured.

  Further, as the material (electron transporting compound) of the electron transport layer 3d, the same material as that constituting the base layer 1a described above may be used. This is the same for the electron transport layer 3d that also serves as the electron injection layer 3e, and the same material as that for the base layer 1a described above may be used.

(5) Blocking layer Examples of the blocking layer include a hole blocking layer and an electron blocking layer, and the organic functional layer unit 3 may be further provided in addition to the above functional layers. For example, it is described in JP-A Nos. 11-204258, 11-204359, and “Organic EL elements and their forefront of industrialization” (issued by NTT, Inc. on November 30, 1998). There is a hole blocking (hole blocking) layer.

  The hole blocking layer has the function of the electron transport layer 3d in a broad sense. The hole blocking layer is made of a hole blocking material that has a function of transporting electrons but has a very small ability to transport holes, and recombines electrons and holes by blocking holes while transporting electrons. Probability can be improved. Further, the configuration of the electron transport layer 3d can be used as a hole blocking layer as required. The hole blocking layer is preferably provided adjacent to the light emitting layer 3c.

  On the other hand, the electron blocking layer has the function of the hole transport layer 3b in a broad sense. The electron blocking layer is made of a material that has a function of transporting holes but has a very small ability to transport electrons, and improves the probability of recombination of electrons and holes by blocking electrons while transporting holes. be able to. Moreover, the structure of the said positive hole transport layer 3b can be used as an electron blocking layer as needed. In the present invention, the thickness of the hole blocking layer is preferably in the range of 3 to 100 nm, more preferably in the range of 5 to 30 nm.

《Second electrode》
The second electrode (counter electrode) 5a is an electrode film that functions as a cathode for supplying electrons to the organic functional layer unit 3, and is composed of a metal, an alloy, an organic or inorganic conductive compound, and a mixture thereof. . Specifically, aluminum, silver, magnesium, lithium, magnesium / copper mixture, magnesium / silver mixture, magnesium / aluminum mixture, magnesium / indium mixture, indium, lithium / aluminum mixture, rare earth metal, indium doped tin oxide (ITO) , ZnO, TiO ₂ , SnO _{2 and} other oxide semiconductors.

  The second electrode 5a can be produced by forming a thin film of these conductive materials by a method such as vapor deposition or sputtering. Further, the sheet resistance as the second electrode 5a is preferably several hundred Ω / □ or less, and the film thickness is usually selected within the range of 5 nm to 5 μm, preferably within the range of 5 to 200 nm.

  In addition, if this organic EL element 100 is a thing which takes out the emitted light h also from the 2nd electrode 5a side, the conductive compound with favorable light transmittance is selected from the conductive compounds mentioned above. What is necessary is just to comprise the 2nd electrode 5a.

<Extraction electrode>
The extraction electrode 16 electrically connects the first electrode 1 and an external power source, and the material thereof is not particularly limited, and a known electrode material can be suitably used. A metal film such as a MAM electrode (Mo / Al · Nd alloy / Mo) having a layer structure can be used.

《Auxiliary electrode》
The auxiliary electrode 15 is provided for the purpose of reducing the resistance value of the first electrode 1, and is provided in contact with the electrode layer 1 b of the first electrode 1. The material forming the auxiliary electrode 15 is preferably a metal material having a low resistance value such as gold, platinum, silver, copper, or aluminum. Since these metal materials have low light transmittance, a pattern is formed within a range not affected by extraction of the emitted light h from the light extraction surface 13a.

  Examples of the method for forming the auxiliary electrode 15 include a vapor deposition method, a sputtering method, a printing method, an ink jet method, an aerosol jet method, and the like. The line width of the auxiliary electrode 15 is preferably 50 μm or less from the viewpoint of the aperture ratio for extracting light, and the thickness of the auxiliary electrode 15 is preferably 1 μm or more from the viewpoint of conductivity.

<Encapsulant>
As shown in FIG. 1, in the organic EL element 100, the sealing material 17 may be disposed so as to cover the display area of the organic EL element 100, and may be concave or flat. Moreover, transparency and electrical insulation are not particularly limited.

  Details will be described by taking the sealing material 17 shown in FIG. 1 as an example. The sealing material 17 covers the organic EL element 100 and may be a plate-shaped (film-shaped) sealing material that is fixed to the resin substrate 13 side by the adhesive 19. It may be a sealing film. For example, as illustrated in FIG. 1, such a sealing material 17 exposes the terminal portions of the extraction electrode 16 and the second electrode 5 a connected to the first electrode 1 in the organic EL element 100, and at least organic It is provided so as to cover the functional layer unit 3. Moreover, the structure which provides an electrode in the sealing material 17 and electrically connects the terminal part of the 1st electrode 1 of the organic EL element 100 and the 2nd electrode 5a, and this electrode may be sufficient.

  Examples of the material constituting the plate-like (film-like) sealing material include a glass plate, a polymer plate / film, and a metal plate / film. Examples of the glass plate include soda-lime glass, barium / strontium-containing glass, lead glass, aluminosilicate glass, borosilicate glass, barium borosilicate glass, and quartz. Examples of the polymer plate include polycarbonate, acrylic, polyethylene terephthalate, polyether sulfide, and polysulfone. Examples of the metal plate include those made of one or more metals or alloys selected from the group consisting of stainless steel, iron, copper, aluminum, magnesium, nickel, zinc, chromium, titanium, molybdenum, silicon, germanium, and tantalum. .

  Among them, since the element can be thinned, a thin film-like polymer substrate or metal substrate can be preferably used as the sealing material 17.

Furthermore, the polymer substrate in the form of a film has an oxygen permeability measured by a method according to JIS K 7126-1987 of 1 × 10 ⁻³ ml / (m ² · 24 h · atm) or less, JIS K 7129-1992. The water vapor permeability (25 ± 0.5 ° C., relative humidity (90 ± 2)% RH) measured by a method conforming to the above is 1 × 10 ⁻³ g / (m ² · 24 h) or less. Is preferred.

  Further, the above substrate material may be processed into a concave plate shape and used as the sealing material 17. In this case, the substrate member described above is subjected to processing such as sandblasting and chemical etching to form a concave shape.

  As shown in FIG. 1, as an adhesive 19 for fixing the plate-shaped sealing material 17 to the resin substrate 13 side, an organic EL sandwiched between the sealing material 17 and the resin substrate 13 is used. It is used as a sealing agent for sealing the element 100. Specifically, such an adhesive 19 is a photocuring and thermosetting adhesive having a reactive vinyl group of an acrylic acid-based oligomer, a methacrylic acid-based oligomer, a moisture-curing type such as 2-cyanoacrylic acid ester, or the like. Can be mentioned.

  Moreover, as such an adhesive agent 19, the heat | fever and chemical curing types (two-component mixing), such as an epoxy type, can be mentioned. Moreover, hot-melt type polyamide, polyester, and polyolefin can be mentioned. Moreover, a cationic curing type ultraviolet curing epoxy resin adhesive can be mentioned.

  In addition, the organic material which comprises the organic EL element 100 may deteriorate with heat processing. For this reason, the adhesive 19 is preferably one that can be adhesively cured from room temperature to 80 ° C. A desiccant may be dispersed in the adhesive 19.

  Application | coating of the adhesive agent 19 to the adhesion part of the sealing material 17 and the resin substrate 13 may use commercially available dispenser, and may print like screen printing.

  In addition, when a gap is formed between the plate-shaped sealing material 17, the resin substrate 13, and the adhesive 19, in this gap, in the gas phase and the liquid phase, an inert gas such as nitrogen or argon or a fluorine is used. It is preferable to inject an inert liquid such as activated hydrocarbon or silicon oil. A vacuum can also be used. Moreover, a hygroscopic compound can also be enclosed inside.

  Examples of the hygroscopic compound include metal oxides (for example, sodium oxide, potassium oxide, calcium oxide, barium oxide, magnesium oxide, aluminum oxide) and sulfates (for example, sodium sulfate, calcium sulfate, magnesium sulfate, cobalt sulfate). Etc.), metal halides (eg calcium chloride, magnesium chloride, cesium fluoride, tantalum fluoride, cerium bromide, magnesium bromide, barium iodide, magnesium iodide etc.), perchloric acids (eg perchloric acid) Barium, magnesium perchlorate, and the like), and anhydrous salts are preferably used in sulfates, metal halides, and perchloric acids.

  On the other hand, when a sealing film is used as the sealing material 17, the organic functional layer unit 3 in the organic EL element 100 is completely covered, and the terminal portions of the first electrode 1 and the second electrode 5a in the organic EL element 100 are exposed. In a state, a sealing film is provided on the resin substrate 13.

  Such a sealing film is configured using an inorganic material or an organic material. In particular, it is assumed that the material is composed of a material having a function of suppressing intrusion of a substance that causes deterioration of the organic functional layer unit 3 in the organic EL element 100 such as moisture and oxygen. As such a material, for example, inorganic materials such as silicon oxide, silicon dioxide, and silicon nitride are used. Further, in order to improve the brittleness of the sealing film, a laminated structure may be formed using a film made of an organic material in addition to a film made of these inorganic materials.

  The method for forming these films is not particularly limited. For example, vacuum deposition method, sputtering method, reactive sputtering method, molecular beam epitaxy method, cluster ion beam method, ion plating method, plasma polymerization method, atmospheric pressure plasma A polymerization method, a plasma CVD method, a laser CVD method, a thermal CVD method, a coating method, or the like can be used.

《Protective film and protective plate》
Although not shown in FIG. 1, a protective film or a protective plate may be provided on the surface facing the resin substrate 13 with the organic functional layer unit 3 interposed therebetween. This protective film or protective plate is for mechanically protecting the organic EL element 100, and in particular, when the sealing material 17 is a sealing film, the organic EL element 100 is sufficiently mechanically protected. Therefore, it is preferable to provide such a protective film or protective plate.

  As the protective film or protective plate as described above, a glass plate, a polymer plate, a polymer film thinner than this, a metal plate, a metal film thinner than this, a polymer material film or a metal material film is applied. Among these, it is particularly preferable to use a polymer film from the viewpoint of light weight and thinning of the element.

《Light extraction technology》
The organic EL element emits light inside a layer having a refractive index higher than that of air (within a refractive index of about 1.6 to 2.1), and 15% to 20% of light generated in the light emitting layer. It is generally said that it can only be taken out. This is because light incident on the interface (interface between the resin substrate and the air) at an angle θ greater than the critical angle causes total reflection and cannot be extracted outside the device, or between the transparent electrode or the light emitting layer and the resin substrate. This is because light is totally reflected between the light and the light is guided through the transparent electrode or the light emitting layer, and as a result, the light escapes in the direction of the side surface of the device.

  As a means for improving the light extraction efficiency, for example, a method of forming irregularities on the resin substrate surface to prevent total reflection at the resin substrate and the air interface (for example, US Pat. No. 4,774,435), A method for improving efficiency by providing light condensing property (for example, JP-A-63-314795), a method for forming a reflective surface on a side surface of an element (for example, JP-A-1-220394), a substrate, etc. A method of forming an antireflection film by introducing a flat layer having an intermediate refractive index between the substrate and the light emitter (for example, Japanese Patent Application Laid-Open No. 62-172691), lower refraction than the substrate between the substrate and the light emitter A method of introducing a flat layer having a refractive index (for example, Japanese Patent Application Laid-Open No. 2001-202827), and a method of forming a diffraction grating between any one of the substrate, the transparent electrode layer and the light emitting layer (including between the substrate and the outside world) ( JP-A-11 283751 JP), a method of providing a scattering layer of a high refractive index and the like than organic layer or the substrate between the substrate and the light emitting body.

  In the present invention, these methods can be used in combination with the organic EL device of the present invention.

  The organic EL element of the present invention can be processed in a specific direction, for example, by combining a so-called condensing sheet with a method of processing so as to provide, for example, a structure on a microlens array on the light extraction side of a support substrate (substrate). The luminance in a specific direction can also be increased by condensing the light emitting surface in the front direction.

  As the condensing sheet, for example, a sheet that is put into practical use in an LED backlight of a liquid crystal display device can be used. As such a sheet, for example, a brightness enhancement film (BEF) manufactured by Sumitomo 3M Co., Ltd. can be used. As the shape of the prism sheet, for example, a substrate may be formed with a triangle stripe having an apex angle of 90 degrees and a pitch of 50 μm, or the apex angle is rounded and the pitch is changed randomly. Other shapes may also be used.

  Moreover, in order to control the light emission angle from an organic EL element, you may use a light-diffusion plate and a film together with a condensing sheet. For example, a diffusion film (light-up) manufactured by Kimoto Co., Ltd. can be used.

  The organic EL element of the present invention may have a configuration in which an intermediate electrode is provided between the organic functional layer units according to the present invention.

<< Method for Manufacturing Organic EL Element >>
The method for producing an organic EL device of the present invention includes a step of laminating a plurality of light emitting layers having different emission colors, including at least one light emitting layer containing the photothermal conversion material, between a pair of electrodes (lamination) Step) and a step of forming a light emission pattern by irradiating light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material to change the light emission function by heating the light emitting layer containing the photothermal conversion material (light) Irradiation step).

In the laminating step in the method for producing the organic EL element of the present invention, the organic EL element as described above is formed by sequentially laminating the first electrode, the organic functional layer unit, the second electrode, and the like on the resin substrate. In the formation of the organic functional layer unit, a plurality of light emitting layers having different emission colors are stacked.
Moreover, in the manufacturing method of the organic EL element of this invention, a photothermal conversion material is contained in at least 1 layer among several light emitting layers from which luminescent color differs. Specifically, a light-emitting layer containing a light-to-heat conversion material can be formed by performing film formation using a light-emitting material and a light-to-heat conversion material by a method similar to a conventional film formation method.

  In the light irradiation step in the method for producing an organic EL element of the present invention, the light emitting surface of the organic EL element formed by the lamination process is irradiated with light to a predetermined region, and the light emitting layer containing the photothermal conversion material is contained. By heating the light irradiation region, the light emitting function of the light irradiation region is changed. Thereby, the light emission luminance changes in the light irradiation region in the light emitting layer containing the photothermal conversion material, and an organic EL element in which a light emitting pattern having a predetermined shape is formed on the light emitting surface can be manufactured.

  Specifically, for example, a laser is used as the light to be irradiated in the light irradiation step, and can be appropriately selected from commercially available lasers according to the maximum absorption peak of the photothermal conversion material. The wavelength of the laser can be selected from the near infrared region to the infrared region in accordance with the absorption peak of the photothermal conversion material. In particular, a laser emitting light in the wavelength range of 780 nm to 1100 nm is preferable. Since the ITO electrode normally used for the transparent electrode of the organic EL element absorbs light having a wavelength in the infrared region, it is difficult to form a pattern with a laser having a wavelength of 1100 nm or more when the organic EL element has an ITO electrode. . Therefore, in that case, it is preferable to form a pattern with a laser having a wavelength of less than 1100 nm. Moreover, it is preferable that the pattern formation to the organic EL element using a reflective electrode is light-irradiated from the transparent electrode side on the opposite side to a reflective electrode after sealing. Pattern formation on an organic EL element that does not use a reflective electrode may be performed by irradiating light from either the anode or the cathode. When pattern formation is performed after sealing, there is no influence on the tact time during production, which is preferable.

  In the light irradiation step, as a light irradiation method, a device capable of forming a pattern on the organic EL panel in accordance with a signal from a computer using a semiconductor laser may be used. When pattern formation is performed using a signal from a computer, an arbitrary image such as a photograph or a pattern can be finely patterned. Further, pattern formation may be performed using a pulse laser such as a picosecond laser or a femtosecond laser. Since a laser having a short pulse width can suppress the diffusion of heat to the surroundings, it can be suitably used for an organic EL element having a thin layer thickness.

Moreover, the light irradiation process of the organic EL element of this invention may be after forming an organic functional layer unit and before performing a sealing process. In particular, a sealing process is performed to produce an organic EL element, and light emission is performed on the organic EL element to perform patterning of a light-emitting area. Light irradiation is performed in a state where the sealed organic EL element is exposed to the atmosphere. Therefore, the light irradiation process can be simplified and the manufacturing cost can be reduced. Further, since the light irradiation can be performed in a state where the organic EL element is exposed to the atmosphere, the light irradiation process can be performed in a state where the organic EL element is flattened by adhesion under reduced pressure or the like, and a non-light-emitting region can be formed with high accuracy. It is also preferable from the viewpoint that
Further, after the light emitting layer containing the photothermal conversion material is formed, the light emitting layer may be irradiated with light to form a light emitting pattern before another layer is formed on the light emitting layer.

  EXAMPLES Hereinafter, the present invention will be specifically described with reference to examples, but the present invention is not limited thereto. In addition, although the display of "%" is used in an Example, unless otherwise indicated, "volume%" is represented.

(Preparation of organic EL element 101)
First, a silicon nitride film as a gas barrier film is formed on the transparent support substrate surface of a PET film (polyethylene terephthalate film “Luminais” manufactured by Toray Film Processing Co., Ltd.) having a thickness of 188 μm using a CVD apparatus that performs film formation by plasma CVD. The film was formed with a film thickness of 100 nm.

  Thereafter, as an anode, indium tin oxide (ITO) was formed into a thickness of 150 nm and patterned, and then the transparent support substrate with the ITO transparent electrode was ultrasonically cleaned with isopropyl alcohol. Drying was performed with dry nitrogen gas, and UV ozone cleaning was performed for 5 minutes.

  On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After film formation by a spin coating method, the film was dried at 130 ° C. for 1 hour to form a hole injection layer having a layer thickness of 30 nm.

After forming the hole injection layer, this transparent support substrate was fixed to a substrate holder of a commercially available vacuum deposition apparatus.
Each of the deposition crucibles in the vacuum deposition apparatus was filled with the constituent material of each layer in an optimum amount for device fabrication. The evaporation crucible used was made of a resistance heating material made of molybdenum or tungsten.

Next, after reducing the pressure to 1 × 10 ⁻⁴ Pa, the following compound 1 (glass transition point (Tg) = 140 ° C.) was deposited to form a hole transport layer having a layer thickness of 40 nm.

  Then, the following compound 2 (Tg = 189 ° C.) is 92% by volume, the following compound 3 is 5% by volume, and e-color IR-14 (manufactured by Nippon Shokubai Co., Ltd.) as a photothermal conversion material is 3% by volume. Evaporation was performed to form a fluorescent light-emitting layer (blue light-emitting layer) having a layer thickness of 10 nm and exhibiting blue light emission.

  Next, the following compound 4 (Tg = 143 ° C.) was vapor-deposited so that the following compound 5 was 79% by volume, the following compound 5 was 20% by volume, and the following compound 6 was 1% by volume. A layer (orange light emitting layer) was formed.

Subsequently, the said compound 4 was vapor-deposited and the hole-blocking layer with a layer thickness of 10 nm was formed.
Subsequently, the following Alq ₃ was deposited to form an electron transport layer having a layer thickness of 30 nm.

Subsequently, KF was vapor-deposited to form an electron injection layer having a layer thickness of 2 nm.
Furthermore, aluminum was vapor-deposited to form a cathode having a layer thickness of 150 nm, and an organic EL device was produced.

Next, the non-light emitting surface of the above element is covered with a glass case, and an epoxy-based photo-curing adhesive (Luxtrac LC0629B manufactured by Toagosei Co., Ltd.) is applied as a sealing material around the glass case, and this is overlapped on the cathode side to be transparent. The glass substrate was brought into close contact with the support substrate, cured by irradiation with UV light from the glass case side, and sealed.
The sealing operation with the glass case was performed in a glove box under a nitrogen atmosphere (in an atmosphere of high-purity nitrogen gas having a purity of 99.999% or more) without bringing the organic EL element into contact with the atmosphere.

(Preparation of organic EL element 102)
In the production of the organic EL element 101, the orange light-emitting layer was composed of 76% by volume of Compound 4, 20% by volume of Compound 5, 1% by volume of Compound 6, and 3% by volume of e-color IR-20 as a photothermal conversion material ( The organic EL element 102 was produced in the same manner except that each was formed by vapor deposition so as to be manufactured by Nippon Shokubai Co., Ltd.

(Preparation of organic EL element 103)
In the preparation of the organic EL element 102, after forming the orange light emitting layer and before forming the hole blocking layer, compound 4 is 77% by volume, compound 5 is 20% by volume, and PRO-JET800NP (Fujitsu) as a photothermal conversion material. The organic EL element 103 was produced in the same manner except that a phosphorescent light-emitting layer (green light-emitting layer) having a layer thickness of 15 nm and exhibiting green light emission was formed.

(Preparation of organic EL element 104)
In the same manner as in the production of the organic EL element 101, an ITO (indium tin oxide) film having a thickness of 150 nm was formed as an anode on a transparent support substrate provided with a gas barrier film. The transparent support substrate with the ITO transparent electrode was ultrasonically cleaned with isopropyl alcohol, dried with dry nitrogen gas, and subjected to UV ozone cleaning for 5 minutes.

  On this transparent support substrate, a solution obtained by diluting poly (3,4-ethylenedioxythiophene) -polystyrene sulfonate (PEDOT / PSS, Bayer, Baytron P Al 4083) to 70% with pure water at 3000 rpm for 30 seconds. After film formation by a spin coating method, the film was dried at 130 ° C. for 1 hour to form a hole injection layer having a layer thickness of 30 nm.

After forming the hole injection layer, this transparent support substrate was fixed to a substrate holder of a commercially available vacuum deposition apparatus.
Each of the deposition crucibles in the vacuum deposition apparatus was filled with the constituent material of each layer in an optimum amount for device fabrication. The evaporation crucible used was made of a resistance heating material made of molybdenum or tungsten.

Next, after reducing the pressure to 1 × 10 ⁻⁴ Pa, the compound 1 (Tg = 140 ° C.) was deposited to form a hole transport layer having a layer thickness of 40 nm.

  Next, the compound 2 (Tg = 189 ° C.) was 92% by volume, the compound 3 was 5% by volume, and e-excolor IR-14 (manufactured by Nippon Shokubai Co., Ltd.) as a photothermal conversion material was 3% by volume. Evaporation was performed to form a fluorescent light emitting layer (blue light emitting layer) having a layer thickness of 30 nm and exhibiting blue light emission.

Next, Alq ₃ was deposited to form an electron transport layer having a layer thickness of 30 nm.
Subsequently, Li was vapor-deposited to form a Li layer with a layer thickness of 0.5 nm, and then the following compound 7 was vapor-deposited to form a hole injection layer with a layer thickness of 15 nm.

Subsequently, the said compound 1 was vapor-deposited and the positive hole transport layer with a layer thickness of 40 nm was formed.
Next, the compound 4 (Tg = 143 ° C.) is vapor-deposited so that the volume of the compound 4 is 79% by volume, the compound 5 is 20% by volume, and the compound 6 is 1% by volume. A layer (orange light emitting layer) was formed.
Next, Alq ₃ was deposited to form an electron transport layer having a layer thickness of 30 nm.
Subsequently, KF was vapor-deposited to form an electron injection layer having a layer thickness of 2 nm.
Further, aluminum was formed to form a cathode having a layer thickness of 150 nm to produce a tandem type organic EL element 104, which was then sealed in the same manner as the organic EL element 101.

(Preparation of organic EL element 105)
In the production of the organic EL element 104, the orange light emitting layer is composed of 76% by volume of the compound 4 (Tg = 143 ° C.), 20% by volume of the compound 5, 1% by volume of the compound 6, and eEX as a photothermal conversion material. An organic EL element 105 was produced in the same manner except that the color IR-20 was deposited and formed so as to be 3% by volume (made by Nippon Shokubai Co., Ltd.).

(Pattern formation of organic EL elements 101-105)
Pattern formation was performed on the produced organic EL elements 101 to 107 using a laser exposure apparatus. That is, the organic EL elements 101 to 105 were pasted on a drum support, and laser exposure was performed at 2.5 mW / mm ² using a semiconductor laser.

Here, FIG. 2A to FIG. 2F are diagrams each showing a light emitting surface of the organic EL element, and FIGS. 2A to 2C show regions of the light emitting surface of the organic EL element that are exposed to laser. 2D to 2F show the light emission pattern of the organic EL element after the laser exposure, FIG. 2D shows the light emission pattern 1, FIG. 2E shows the light emission pattern 2, and FIG. 2F shows the light emission pattern 3, respectively. .
When IR-14 (maximum absorption wavelength: 830 nm) is contained as a photothermal conversion material in the light emitting layer, light is applied to regions A and B using a semiconductor laser having a wavelength of 830 nm as shown in FIG. 2A. did.
When IR-20 (maximum absorption wavelength: 905 nm) is contained as a photothermal conversion material in the light emitting layer, light is applied to regions B and C using a semiconductor laser having a wavelength of 904 nm as shown in FIG. 2B. did.
When PRO-JET800NP (maximum absorption wavelength: 775 nm) is contained as a photothermal conversion material in the light emitting layer, light is applied to the regions A to D as shown in FIG. 2C using a semiconductor laser having a wavelength of 780 nm. did.

(Preparation of organic EL element 106 and pattern formation)
In the same manner as in the production of the organic EL element 101, the organic EL element 106 was produced and sealed.
The organic EL element 106 thus manufactured was closely attached under reduced pressure with a pattern mask and an ultraviolet absorption filter (manufactured by Isuzu Seiko Glass Co., Ltd.) placed therein, and UV tester (Iwasaki Electric Co., Ltd., SUV-W151: 100 mW / cm ² 2), the regions A and B were irradiated with ultraviolet rays from the resin substrate side for 3 hours as shown in FIG. 2A and patterned. As the ultraviolet absorption filter, a filter having a light transmittance of 50% or less for light having a wavelength component of 320 nm or less was used.

(Evaluation of luminescent color)
As described above, the light emission color of each region of the light emitting surface was visually confirmed with respect to the organic EL elements 101 to 106 on which the light emission pattern was formed. The results are shown in Table 1.
It is assumed that the light emission color of the region where the light emitting function is changed in all of the plurality of light emitting layers stacked by light irradiation, that is, the region where all of the plurality of light emitting layers are not emitting light is “black”. Evaluation was performed.

As shown in Table 1, in the organic EL elements 101 to 105 of the present invention, it was confirmed that the light-emitting layer containing the photothermal conversion material was selectively non-light-emitting, and a multi-color light-emitting pattern was formed. it can.
Specifically, in the organic EL element 101, the blue light emitting layer contains a photothermal conversion material having a maximum absorption wavelength of 830 nm, and the regions A and B of the organic EL element 101 are irradiated with light having a wavelength of 830 nm. Thus, in the regions A and B, only the blue light emitting layer could be made to emit no light. Therefore, as shown in FIG. 2D, an orange light emission pattern was formed in the regions A and B, and a white light emission pattern was formed in the regions C, D, and E due to the mixed color of blue and orange (light emission pattern 1).

  In the organic EL element 102, the blue light emitting layer contains a photothermal conversion material having a maximum absorption wavelength of 830 nm, and the orange light emitting layer contains a photothermal conversion material having a maximum absorption wavelength of 905 nm. The regions A and B were irradiated with light having a wavelength of 830 nm, and the regions B and C were irradiated with light having a wavelength of 904 nm. As a result, only the blue light-emitting layer in the region A did not emit light, both the blue light-emitting layer and the orange light-emitting layer did not emit light in the region B, and only the orange light-emitting layer did not emit light in the region C. Therefore, as shown in FIG. 2E, an orange light emission pattern is formed in the region A, a blue light emission pattern is formed in the region C, and a white light emission pattern is formed in the regions D and E due to the mixed color of blue and orange. (Light emission pattern 2). Note that the region B was non-emitting (black).

  In the organic EL element 103, the blue light emitting layer contains a photothermal conversion material having a maximum absorption wavelength of 830 nm, the orange light emitting layer contains a photothermal conversion material having a maximum absorption wavelength of 905 nm, and the green light emitting layer has a maximum absorption wavelength of 775 nm. These photothermal conversion materials are contained. In the region A, the regions A and B of the organic EL element 103 are irradiated with light having a wavelength of 830 nm, the regions B and C are irradiated with light having a wavelength of 904 nm, and the regions A to D are irradiated with light having a wavelength of 780 nm. In the region B, the blue light emitting layer and the green light emitting layer are made non-light emitting. In the region B, all of the blue light emitting layer, the orange light emitting layer and the green light emitting layer are made non-light emitting, in the region C, the orange light emitting layer and the green light emitting layer are made non-light emitting. In FIG. 5, only the green light emitting layer could be made non-light emitting. Accordingly, an orange light emission pattern is formed in the region A, a blue light emission pattern is formed in the region C, a white light emission pattern is formed in the region D by a mixed color of blue and orange, and a blue, orange, and green light is formed in the region E. A mixed color light emission pattern was formed (light emission pattern 3). Specifically, the emission color of the region E is white with a slight green. Note that the region B was non-emitting (black).

  In the organic EL elements 104 and 105, it is shown that a light emission pattern of each color is formed even if another organic functional layer is interposed between the blue light emitting layer and the orange light emitting layer. It is shown that the present invention can be applied even when another organic functional layer is interposed between them.

  Thus, it was shown that the organic EL device of the present invention has no limitation on the light emitting material used and has a light emission pattern of two or more colors.

  On the other hand, in the organic EL element 106 of the comparative example, both the blue light-emitting layer and the orange light-emitting layer do not emit light in the regions A and B due to ultraviolet irradiation, indicating that a light emission pattern of two or more colors is not formed. Has been.

  As described above, the present invention is not limited to the light emitting material to be used, and an organic electroluminescent element having a light emitting pattern of two or more colors, and a method of manufacturing an organic electroluminescent element for manufacturing such an organic electroluminescent element. Suitable for providing.

DESCRIPTION OF SYMBOLS 1 1st electrode 1a Underlayer 1b Electrode layer 3 Organic functional layer unit 3a Hole injection layer 3b Hole transport layer 3c Light emitting layer 3d Electron transport layer 3e Electron injection layer 5a Second electrode 13 Resin substrate 13a Light extraction surface 15 Auxiliary electrode 16 Extraction electrode 17 Sealing material 19 Adhesive 100 Organic EL element h Emitted light

Claims (5)

An organic electroluminescence element in which a plurality of light emitting layers having different emission colors are sandwiched between a pair of electrodes,
At least one of the light emitting layers contains a light-to-heat conversion material that absorbs light and converts it into heat,
The light emitting layer containing the light-to-heat conversion material is heated by irradiation with light having a wavelength corresponding to the maximum absorption wavelength of the light-to-heat conversion material, so that the light-emitting function is changed and a light-emitting pattern is formed. An organic electroluminescence device characterized.   The organic electroluminescence device according to claim 1, wherein the photothermal conversion material has a maximum absorption wavelength in a wavelength range of 750 to 1200 nm.   The organic electroluminescence element according to claim 1, wherein the photothermal conversion material is a nonionic material. Each of the plurality of light emitting layers contains the photothermal conversion material having a different maximum absorption wavelength,
By irradiating each of the light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material contained in each of the plurality of light emitting layers, each of the plurality of light emitting layers is heated to change a light emitting function, The organic electroluminescent element according to claim 1, wherein a plurality of light emitting patterns are formed. A lamination step of laminating and forming a plurality of light emitting layers having different emission colors, including at least one light emitting layer containing a photothermal conversion material that absorbs light and converts it into heat between a pair of electrodes;
By irradiating light having a wavelength corresponding to the maximum absorption wavelength of the photothermal conversion material, the light emitting layer containing the photothermal conversion material is heated to change the light emission function, thereby forming a light emission pattern; and The manufacturing method of the organic electroluminescent element characterized by having.

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