JP6155922B2 - Electrostatic chuck device - Google Patents

Description

  The present invention relates to an electrostatic chuck device, and more particularly, is used suitably for a vacuum process apparatus such as an etching apparatus, a sputtering apparatus, or a CVD apparatus applied to a manufacturing process of a semiconductor, a liquid crystal display, etc. It is related with the electrostatic chuck apparatus which can prevent the damage given to a device and the fall of a yield by detecting by.

Conventionally, components made of ceramics such as alumina have been widely used in various processes such as etching and sputtering in a production line of semiconductor devices such as IC, LSI, and VLSI. For example, an electrostatic chuck is mentioned as a ceramic component in a semiconductor manufacturing apparatus.
An electrostatic chuck requires high adhesion performance, excellent thermal conductivity, and durability as a support mechanism for a semiconductor substrate such as a silicon wafer. This electrostatic chuck is provided with a substantially disk-shaped insulator on which a semiconductor substrate is placed and an electrostatic chucking electrode embedded in the insulator. By applying a DC voltage to the semiconductor substrate placed on the body, an electrostatic adsorption force due to Coulomb force or minute leakage current is generated, and the semiconductor substrate is fixed on the insulator by this electrostatic adsorption force. doing.

As an insulator used for the electrostatic chuck, ceramics such as aluminum oxide and aluminum nitride are generally used.
Ceramics are particularly excellent in thermal conductivity and plasma resistance, but they are hard to conform to the substrate due to the hard material, and as a result, scratches, cracks, etc. occur when transporting the semiconductor substrate, or long There is a risk of insulation deterioration due to use over a period of time and breakdown due to damage by plasma or corrosive gas, and elements on the semiconductor substrate may be destroyed during various processes such as etching and sputtering. There is.

Therefore, as a technology to detect dielectric breakdown of the insulator of the electrostatic chuck, the dielectric breakdown of the insulator was detected by installing a current detector in the circuit of the power supply connected to the electrostatic chuck, and the dielectric breakdown occurred. A technique for preventing the electrostatic chuck from being used continuously has been proposed (see Patent Documents 1 and 2).
In addition, a technique for detecting a dielectric breakdown of an insulator by measuring a potential difference between an electrostatic chuck internal electrode for electrostatic chuck and a ground electrode has been proposed (see Patent Document 3, etc.).
Further, an electrostatic chuck using a porous dielectric instead of an insulator has been proposed (see Patent Document 4). This electrostatic chuck employs a diagnostic method for preventing dielectric breakdown due to moisture adsorption.

JP 2005-175122 A JP 2002-305237 A Japanese Patent Laid-Open No. 06-267905 JP 2008-47564 A

  However, in the conventional Coulomb force type electrostatic chuck, since a high voltage of 1000 V or more is applied to the insulator, the dielectric breakdown occurs when the dielectric breakdown occurs during the application of the high voltage. Occurs instantaneously and at the same time a large current flows, so that the electrostatic chuck becomes unusable when dielectric breakdown is detected. Therefore, the methods described in Patent Documents 1 to 3 have a problem that it is impossible to predict in advance that the electrostatic chuck cannot be used due to dielectric breakdown.

  In addition, when the electrostatic chuck breaks down, when the large current generated by the breakdown is detected, the large current flows in a concentrated manner at one point where the breakdown occurs. The above device will be damaged. Therefore, it is difficult to prevent dielectric breakdown from occurring in the electrostatic chuck during use, and it is difficult to prevent damage to the device due to dielectric breakdown.

  On the other hand, in the electrostatic chuck using a porous dielectric instead of the insulator described in Patent Document 4, it is only possible to detect the deterioration of insulation due to moisture adsorption of the porous dielectric, It is not possible to detect the essential insulation deterioration of the dielectric itself. Therefore, it is impossible to predict in advance that the electrostatic chuck cannot be used due to dielectric breakdown, and it is impossible to prevent dielectric breakdown from occurring in the electrostatic chuck during use. It is also difficult to prevent damage to the device.

  The present invention has been made in view of the above circumstances, and can detect a sign of dielectric breakdown before or during use, and thus can predict dielectric breakdown in advance. The purpose is to provide.

As a result of intensive studies to solve the above problems, the present inventors formed or placed a measurement electrode on the mounting surface of the substrate, and the current value between the measurement electrode and the electrostatic adsorption electrode time but from the time of applying a DC voltage to be 1 nA / cm ^2, until the current flowing between the measuring electrode and the electrostatic attraction electrodes when holding the DC voltage reaches 100 nA / cm ² If this is set to 1 second or longer, the dielectric breakdown of the substrate can be caused to proceed gently. Therefore, the dielectric breakdown can be predicted in advance by measuring the electrical resistance of the substrate before or during use. As a result, the present invention has been completed.

That is, the electrostatic chuck device of the present invention includes a base having one main surface as a mounting surface on which a plate-like sample is mounted, and an electrostatic chucking electrode provided in the base or on the other main surface side. An electrode for measurement is formed or placed on the mounting surface of the substrate, and a current value is 1 nA / b between the electrode for measurement and the electrode for electrostatic adsorption. The time from when the DC voltage of cm ² is applied to when the current flowing between the measurement electrode and the electrostatic adsorption electrode reaches 100 nA / cm ² when the DC voltage is maintained is 1 second. It is the above.

After the current reaches 100 nA / cm ² , it is preferable that there are 10 or more conductive paths per cm ² generated on the mounting surface of the substrate.
The ratio of the current flowing between the measurement electrode and the electrostatic adsorption electrode to the minimum value of the maximum value of the in-plane current distribution in the measurement electrode is preferably 1000 or less.
The withstand voltage of the substrate is preferably 5 kV / mm or more.

The base is made of a dielectric material in which conductive particles are dispersed in an insulating material, and the conductive particles have a cumulative volume percentage of 10 volume% in the volume particle size distribution and a particle diameter D10 of 0.2 μm or less. The particle size D90 having a cumulative volume percentage of 90% by volume is 2 μm or less, and the ratio (D90 / D10) of the particle size D90 having a cumulative volume percentage of 90% by volume to the particle size D10 having a cumulative volume percentage of 10% by volume is 3 The ratio (D90 / D50) of the particle diameter D90 having a cumulative volume percentage of 90% by volume to the particle diameter D50 having a cumulative volume percentage of 50% by volume is preferably 1.5 or more.
The content of the conductive particles in the dielectric material is preferably 4% by mass or more and 20% by mass or less.

According to the electrostatic chuck apparatus of the present invention, the measurement electrode is formed or placed on the placement surface of the substrate, and the current value becomes 1 nA / cm ² between the measurement electrode and the electrostatic adsorption electrode. Since the time from when the DC voltage is applied until the current flowing between the measurement electrode and the electrostatic adsorption electrode reaches 100 nA / cm ² when the DC voltage is maintained is set to 1 second or longer. The dielectric breakdown of the substrate can be made to proceed gently. Therefore, by measuring the current or electric resistance flowing through the substrate before or during use of the substrate, a sign of dielectric breakdown can be obtained from the value of the current or electric resistance. As a result, the dielectric breakdown of the substrate can be predicted in advance.

It is sectional drawing which shows the electrostatic chuck apparatus of one Embodiment of this invention. It is sectional drawing which shows the modification of the electrostatic chuck apparatus of one Embodiment of this invention. It is sectional drawing which shows the other modification of the electrostatic chuck apparatus of one Embodiment of this invention.

The form for implementing the electrostatic chuck apparatus of this invention is demonstrated.
The following embodiments are specifically described for better understanding of the gist of the invention, and do not limit the present invention unless otherwise specified.

FIG. 1 is a sectional view showing an electrostatic chuck device according to an embodiment of the present invention.
The electrostatic chuck device 1 includes a dielectric plate (base body) 2 having an upper surface (one main surface) 2a as a mounting surface on which a wafer (plate-like sample) W is placed, and a lower surface (others) of the dielectric plate 2 An electrostatic chuck portion 4 is composed of the electrostatic chucking electrode 3 provided on the main surface 2b side.
A sheet-like or film-like insulating layer 6 is bonded to the electrostatic adsorption electrode 3 via a sheet-like or film-like (first) organic adhesive layer 5, and the sheet-like or film-like insulating layer 6 is attached. A base portion (base) 8 that supports the electrostatic chuck portion 4 and cools the wafer W is bonded to the insulating layer 6 and the electrostatic chuck portion 4 via the (second) organic adhesive layer 7. Has been.

Hereinafter, the electrostatic chuck device 1 will be described in detail.
The dielectric plate 2 is a disc made of a dielectric material whose upper surface 2a is a mounting surface on which various wafers W such as silicon wafers are mounted.
This dielectric material is a composite sintered body in which conductive particles are dispersed in an insulating material. The conductive particles have a cumulative volume percentage of 10 volume% in the volume particle size distribution and a particle diameter D10 of 0.2 μm. Hereinafter, the ratio (D90 / D10) of the particle diameter D90 having a cumulative volume percentage of 90% by volume to 2 μm or less and the particle diameter D90 having a cumulative volume percentage of 90% by volume to the particle diameter D10 having a cumulative volume percentage of 10% by volume is 3. The ratio (D90 / D50) of the particle diameter D90 having a cumulative volume percentage of 90% by volume or more to the particle diameter D50 having a cumulative volume percentage of 50% by volume is 1.4 or more.

Here, how the dielectric material is found to be a material suitable for the electrostatic chuck device 1 of the present embodiment will be described.
The formation of a conductive path of a dielectric material made of a composite sintered body in which conductive particles are dispersed in an insulating material can be explained by percolation theory.
In this percolation theory, when the ratio of the conductive particles dispersed in the insulating material exceeds a certain threshold, the conductivity increases rapidly (resistance value decreases), and the connection of the conductive particles near this threshold is fractal. It is known to show.

Therefore, the present inventors have made it easy to moderate the dielectric breakdown of the dielectric material made of the composite sintered body, that is, to improve the dielectric breakdown characteristics of the dielectric material, the conductive path at the time of the dielectric breakdown. We thought that it was necessary to increase the branch of the current path, that is, to increase the fractal dimension of the conductive path.
Based on this idea, a dielectric material that moderates dielectric breakdown was produced by dispersing a certain amount of conductive particles satisfying a certain particle size distribution in the insulating material. It was found that when the fractal dimension of the conductive path is increased, the dielectric breakdown does not occur in the form of pinholes but occurs with a wide distribution, so that the characteristic of gradual dielectric breakdown can be obtained.

In addition, by widening the particle size distribution of the conductive particles in the insulating material, when the conductive particles greater than the threshold are added, the fractal dimension of the connection of the conductive particles is increased, while It was found that when conductive particles were added, the fractal dimension of the conductive path caused by dielectric breakdown increased.
In addition, if the particle size distribution of the conductive particles in the insulating material is widened, the content of the conductive particles can be increased, and the threshold value for forming a conductive path is increased, so that the insulating property is maintained. It turned out that the content rate of electroconductive particle can be made high and a dielectric material with a high dielectric constant is obtained.
As described above, if a substrate of a Coulomb force type electrostatic chuck device is manufactured using a dielectric material having a high dielectric constant, the dielectric breakdown of the electrostatic chuck device can be predicted by measuring an electric resistance or a current value. This has led to the creation of the present invention.

  As the insulating material used for the dielectric material, various organic resins such as polyimide resin and silicon resin and insulating ceramics can be selected as appropriate. However, the organic resin deteriorates in insulating characteristics due to heat generation. Insulating ceramics is preferably used because it is easy to obtain characteristics in which dielectric breakdown occurs slowly.

As this insulating material, that is, insulating ceramics, aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), silicon oxide (SiO ₂ ), zirconium oxide (ZrO ₂ ), aluminum nitride (AlN), Silicon nitride (Si ₃ N ₄ ), mullite (3Al ₂ O ₃ .2SiO ₂ ), hafnium oxide (HfO ₂ ), scandium oxide (Sc ₂ O ₃ ), neodymium oxide (Nd ₂ O ₃ ), niobium oxide (Nb ₂₎ O ₅ ), samarium oxide (Sm ₂ O ₃ ), ytterbium oxide (Yb ₂ O ₃ ), erbium oxide (Er ₂ O ₃ ), oxide consisting of only one selected from the group of cerium oxide (CeO ₂ ) Or a composite oxide formed by mixing two or more kinds.

Among these, aluminum oxide (Al ₂ O ₃ ) is particularly suitable for the dielectric material of this embodiment because it is inexpensive, excellent in heat resistance, and has good mechanical properties of the composite sintered body. .
Further, when it is desired to further enhance the case and corrosion resistance to be used aluminum (Al) content is less insulating ceramics, yttrium oxide _{(Y 2 O} 3), yttrium aluminum garnet _{(YAG: 3Y 2 O 3 ·} 5Al ₂ O ₃ ) or the like can also be used.

As the raw material powder of aluminum oxide (Al ₂ O ₃ ), it is preferable to use an aluminum oxide powder having an average particle diameter of 1 μm or less.
The reason is that in the silicon carbide-aluminum oxide composite sintered body obtained by using the aluminum oxide powder having an average particle diameter exceeding 1 μm, the average particle diameter of the aluminum oxide particles in the composite sintered body exceeds 2 μm. Thus, when a substrate of an electrostatic chuck device is produced using this silicon carbide-aluminum oxide composite sintered body, the upper surface of the substrate on which the plate-like sample is placed is easily etched by plasma. This is because sputter marks are formed on the upper surface of the base material, which may cause contamination of the object to be adsorbed such as a silicon wafer.
The raw material powder of aluminum oxide (Al ₂ O ₃ ) is not particularly limited as long as it has an average particle diameter of 1 μm or less and high purity.

The conductive particles include conductive ceramic particles such as conductive silicon carbide (SiC) particles, refractory metal particles such as molybdenum (Mo) particles, tungsten (W) particles, and tantalum (Ta) particles, and carbon (C) particles. It is preferable that it is 1 type, or 2 or more types selected from the group of these.
Among these, when conductive silicon carbide (SiC) particles are compounded with aluminum oxide (Al ₂ O ₃ ) particles, the obtained composite sintered body has a small temperature dependency of electrical characteristics, It is preferable since it has excellent corrosion resistance against gas, is excellent in heat resistance and thermal shock resistance, and has a low risk of damage due to thermal stress even when used at high temperatures.

As the conductive silicon carbide (SiC) particles, silicon carbide powder having a β-type crystal structure is preferably used because of its excellent conductivity. In addition, in order to control the conductivity of the silicon carbide powder, a material in which the nitrogen content in silicon carbide is appropriately controlled may be used.
As the conductive silicon carbide (SiC) particles, silicon carbide powder obtained by various methods such as a plasma CVD method, a precursor method, a thermal carbon reduction method, and a laser pyrolysis method can be used. In particular, when the dielectric material of this embodiment is used in a semiconductor process, it is preferable to use a high-purity material in order to prevent adverse effects in the semiconductor process.

In the dielectric material, the conductive particle has a particle size D10 having a cumulative volume percentage of 10% by volume in a volume particle size distribution of 0.2 μm or less, and a particle size D90 having a cumulative volume percentage of 90% by volume of 2 μm or less. The ratio (D90 / D10) of the particle size D90 having a cumulative volume percentage of 90% by volume to the particle size D10 having a cumulative volume percentage of 10% by volume is preferably 3.0 or more.
Further, the ratio (D90 / D50) of the particle size D90 having a cumulative volume percentage of 90% by volume to the particle size D50 having a cumulative volume percentage of 50% by volume is preferably 1.4 or more, and more preferably 1.5 or more. Is more preferable.

Here, the reason why various numerical values in the volume particle size distribution of the conductive particles are defined as described above will be described.
If there are too many large conductive particles in the dielectric material, there is a risk that the plasma resistance and the number of particles when the dielectric plate 2 of the electrostatic chuck device 1 is used will deteriorate. . Accordingly, the particle diameter D90 having a cumulative volume percentage of 90% by volume is preferably 2 μm or less (2% or more conductive particles are 10% or less), preferably 1 μm or less (1 μm or more conductive particles is 10% or less). More preferably.

  Also, if there are too many conductive particles with a fine particle size, when the amount of conductive particles is increased, the number of conductive particles becomes too large, and the conductive particles present at the grain boundaries of the insulating particles are connected. Since it becomes easy to increase the withstand voltage and increase the blending amount of the conductive particles, that is, the dielectric constant cannot be increased, the particle diameter D90 having a cumulative volume percentage of 90% by volume is 0.5 μm or more. It is preferable. For the same reason, the particle diameter D50 having a cumulative volume percentage of 50% by volume is preferably 0.3 μm or more.

On the other hand, the thickness of the narrowest conductive path formed by dielectric breakdown in the dielectric plate 2 depends on the size and ratio of the conductive particles dispersed in the dielectric material. Therefore, in order to make it easy to obtain a characteristic that causes a gradual breakdown, it is necessary to reduce the thickness of the thinnest conductive path. Therefore, particles whose cumulative volume percentage in the volume particle size distribution of the conductive particles is 10% by volume. The diameter D10 is preferably 0.2 μm or less.
Furthermore, in order to make the branch of the dielectric breakdown finer and increase the branch of the conductive path, it is preferable that particles of 0.04 μm or less are contained in an amount of 0.001% or more, more preferably 1% or more and 10% or less.

In addition, in order to moderate the dielectric breakdown of the dielectric plate 2, in addition to the condition that the particle diameter D10 having a cumulative volume percentage of 10 volume% is 0.2 μm or less, the particle diameter D90 having a cumulative volume percentage of 90 volume%. The ratio (D90 / D10) with respect to the particle diameter D10 having a cumulative volume percentage of 10% by volume is 3.0 or more, and the particle diameter D50 having a cumulative volume percentage of 50% by volume with a particle diameter D90 having a cumulative volume percentage of 90% by volume. The ratio (D90 / D50) to is preferably 1.4 or more, and more preferably 1.5 or more.
In order to obtain the effect of widening the particle size distribution efficiently, it is preferable that the particle size distribution is a smooth curve when graphed.

Note that the particle diameter in the raw material powder of the conductive particles and the particle diameter in the dielectric material are changed by pulverization and sintering in the manufacturing process, and thus do not have the same particle diameter. Therefore, it is necessary to determine the particle size of the raw material powder of the conductive particles so that the particle size of the conductive particles in the dielectric material is in the above range.
By the way, since it is difficult to obtain particles having a size of 0.04 μm or less by pulverization in the manufacturing process, the conductive particles contained in the dielectric material should contain 0.001% or more of particles having a size of 0.04 μm or less. It is preferable to use a material having a particle size of 0.04 μm or less in an amount of 1% or more (particle diameter D1 having a cumulative volume percentage of 1% by volume is 0.04 μm or less).

Further, in order to make the amount of the conductive particles contained in the composite sintered body 2 μm or more 10% or less (particle diameter D90 is 2 μm or less), the particle diameter of 1 μm or more in the raw material of the conductive particles The particles are preferably 1% or less (particle diameter D1 is 1 μm or less).
Furthermore, when several types of conductive particles are used in combination, the total of the various types of conductive particles preferably satisfies the above conditions.

The content of the conductive particles in the dielectric material is preferably 4% by mass or more and 20% by mass or less, more preferably 5% by mass or more and 20% by mass or less, and more preferably 5% by mass or more and 12% by mass. More preferably, it is at most mass%.
Here, the reason why the content of the conductive particles is in the above range is that when the content of the conductive particles is less than 4% by mass, the amount of the conductive particles is too small with respect to the insulating material. This is because conductivity cannot be obtained, and because the distance between the conductive particles contained in the dielectric material is too far away, it is difficult to obtain the characteristic that dielectric breakdown proceeds. On the other hand, when the content of the conductive particles exceeds 20% by mass, the amount of the conductive particles is too much with respect to the insulating material, and the conductive particles become large due to aggregation or sintering, and there are many particles of 2 μm or more. This is because it is easy to be obtained, and good dielectric characteristics can be obtained, but it is difficult to obtain a withstand voltage characteristic necessary for use as the dielectric plate 2 of the electrostatic chuck device 1.

In addition, since the content rate of the electroconductive particle in this dielectric material changes with the kind of insulating material to be used, and a required characteristic, it is preferable to optimize the content rate of electroconductive particle within the said range.
For example, when insulating ceramics are used as the insulating material, most of the conductive particles are unevenly distributed at the grain boundaries of the insulating ceramic crystal particles in the sintering stage, compared with the case where they are dispersed in the insulating resin. The threshold value for forming the conductive path is reduced.
This is because the larger the size of the insulating ceramic crystal particles with respect to the conductive particles, and the smaller the conductive particles taken into the insulating ceramic crystal particles, the more prominent.

Therefore, widening the particle size distribution of the conductive particles has the effect of increasing the threshold value for forming a conductive path even if the crystal size of the insulating ceramic crystal particles is the same. For example, when the particle diameter of the insulating ceramic crystal particles is 0.1 to 10 μm, the threshold value for forming the conductive path is about 4 to 20%.
Therefore, the content of conductive particles is preferably about 0.05 to 8% by volume smaller than the above threshold value, for example, so that the withstand voltage satisfies the specifications of the electrostatic chuck. It is more preferable to make the value about 5% by volume smaller.

  In addition, if the particle size distribution of the conductive particles is widened, it is possible to contain more conductive particles due to the effect of increasing the threshold value for forming a conductive path even if the crystal size of the insulating ceramic crystal particles is the same. The dielectric constant can be further increased.

  The thickness of the dielectric plate 2 is preferably 0.3 mm or more and 3 mm or less, and more preferably 0.4 mm or more and 1 mm or less. The reason is that if the thickness of the dielectric plate 2 is less than 0.3 mm, the mechanical strength of the dielectric plate 2 cannot be secured, while if the thickness of the dielectric plate 2 exceeds 3 mm, the electrode surface The distance between the surface and the attracting surface increases, the attracting force decreases, the heat capacity of the dielectric plate 2 increases, the efficiency of heat exchange with the wafer W placed thereon decreases, and the in-plane temperature of the wafer W This is because it becomes difficult to maintain the desired temperature pattern.

In order to improve the characteristics relating to the temperature distribution of the electrostatic chuck device 1, the surface roughness Ra of the upper surface 2a on which the wafer W of the dielectric plate 2 is placed is preferably greater than 0.002 μm. More preferably, it is larger than 0.005 μm.
Here, the reason why the surface roughness Ra of the upper surface 2a is larger than 0.002 μm is that when the surface roughness Ra is 0.002 μm or less, the heat transfer effect on the upper surface 2a becomes insufficient. It is because it is not preferable.
On the other hand, in order to eliminate problems with the generation of particles in the electrostatic chuck device 1, the upper surface 2a on which the wafer W of the dielectric plate 2 is placed is preferably mirror-polished, and the surface roughness of the upper surface 2a. Ra is preferably 0.5 μm or less, and more preferably 0.15 μm or less.
Further, a flow path for circulating a heat medium such as He gas or N ₂ gas may be formed between the upper surface 2 a of the dielectric plate 2, that is, between the adsorption surface of the wafer W and the wafer W.

The dielectric strength of the dielectric plate 2 is preferably 5 kV / mm or more, and more preferably 8 kV / mm or more.
Here, the reason why the withstand voltage of the dielectric plate 2 is 5 kV / mm or more is that when the withstand voltage is less than 5 kV / mm, the voltage for adsorbing when used as an electrostatic chuck device is 5 kV / mm or more. This is because a sufficient adsorption power cannot be obtained.

A film may be formed on the upper surface 2a of the dielectric plate 2 by thermal spraying, chemical vapor deposition, sputtering, adhesion, or the like in order to improve characteristics such as corrosion resistance, plasma resistance, and slidability. It is good also as a laminated body which consists of a composite material laminated | stacked with another material. Examples of materials used for the coating include aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), yttrium aluminum garnet (YAG: 3Y ₂ O ₃ .5Al ₂ O ₃ ), and the like. Can be appropriately selected according to the purpose of use.

  Further, even when a film is formed or a laminate, the contribution to the withstand voltage, that is, the value obtained by adding the thickness in the direction in which the voltage is applied to the withstand voltage value of the dielectric plate 2 is applied to the coat or laminate. By making the material larger than the used material, it is possible to detect a sign of dielectric breakdown before or during use, and therefore, dielectric breakdown can be predicted in advance.

Further, any one of protrusions, grooves, protrusions and grooves may be formed on the upper surface 2a of the dielectric plate 2 to form an uneven surface.
As described above, even when the top surface 2a of the dielectric plate 2 is an uneven surface, if the characteristics before the formation of the uneven surface can predict dielectric breakdown in advance, the uneven surface can be obtained. Even after forming, dielectric breakdown can be predicted in advance.

The electrostatic chucking electrode 3 is used as an electrostatic chuck electrode for generating an electric charge and fixing the wafer W to the upper surface 2a of the dielectric plate 2 by electrostatic chucking force. And the size is adjusted as appropriate.
As a material constituting the electrode 3 for electrostatic adsorption, metals such as gold (Au), silver (Ag) and copper (Cu) which are nonmagnetic materials, refractory metals such as titanium, tungsten, molybdenum and platinum, Carbon materials such as graphite and carbon, conductive ceramics such as silicon carbide (SiC), titanium nitride (TiN), titanium carbide (TiC), tungsten carbide (WC), TiC-Ni system, TiC-Co system, B4C-Fe A cermet such as a system is preferably used. It is desirable that the thermal expansion coefficient of these materials is as close as possible to the thermal expansion coefficient of the dielectric plate 2.

The thickness of the electrostatic attraction electrode 3 is not particularly limited, but is preferably 5 μm or more and 200 μm or less, particularly preferably 10 μm or more and 100 μm or less when used as a plasma generating electrode. The reason is that if the thickness is less than 5 μm, sufficient conductivity cannot be ensured. On the other hand, if the thickness exceeds 200 μm, the coefficient of thermal expansion between the dielectric plate 2 and the electrostatic adsorption electrode 3 is not achieved. Due to the difference, cracks are likely to occur at the bonding interface between the dielectric plate 2 and the electrostatic adsorption electrode 3, and the step between the electrostatic adsorption electrode 3 and the dielectric plate 2 can be reduced with an organic adhesive. This is because it cannot be covered with the layer 5 and the insulating property in the side surface direction is lowered.
The electrostatic adsorption electrode 3 having such a thickness can be easily formed by a film forming method such as a sputtering method or a vapor deposition method, or a coating method such as a screen printing method.

  In the electrostatic chuck device 1, a wafer W is placed on the upper surface 2 a of the dielectric plate 2, and a predetermined voltage is applied between the wafer W and the electrostatic chucking electrode 3 to use electrostatic force. Thus, the wafer W can be fixed to the upper surface 2a of the dielectric plate 2 by suction.

The organic adhesive layer 5 is a sheet-like or film-like adhesive made of acrylic, epoxy, polyethylene, or the like, and is preferably a thermocompression-type organic adhesive sheet or film.
The reason is that an organic adhesive sheet or film of the thermocompression bonding type is placed on the electrostatic adsorption electrode 3, evacuated, and then thermocompression bonded to the electrostatic adsorption electrode 3. This is because bubbles and the like are not easily generated, and therefore are difficult to peel off, and the adsorption characteristics and voltage resistance characteristics of the electrostatic chuck portion 4 can be maintained well.

The thickness of the organic adhesive layer 5 is not particularly limited, but it is preferably 5 μm or more and 100 μm or less, more preferably 10 μm or more and 50 μm or less in consideration of the adhesive strength and ease of handling.
When the thickness is 5 μm or more and 100 μm or less, the adhesive strength between the organic adhesive layer 5 and the lower surface of the electrostatic adsorption electrode 3 is improved, and the thickness of the organic adhesive layer 5 is further increased. As a result, the thermal conductivity between the dielectric plate 2 and the base portion 8 becomes uniform, the cooling characteristics of the mounted wafer W become uniform, and the in-plane temperature of the wafer W becomes uniform. It becomes.

  If the thickness of the organic adhesive layer 5 is less than 5 μm, the thermal conductivity between the electrostatic chuck portion 4 and the base portion 8 is improved, but the thickness of the organic adhesive layer 5 is reduced. Therefore, the adhesive strength between the organic adhesive layer 5 and the lower surface of the electrostatic adsorption electrode 3 is weakened, and the gap between the organic adhesive layer 5 and the lower surface of the electrostatic adsorption electrode 3 is reduced. Peeling tends to occur, which is not preferable. On the other hand, if the thickness exceeds 100 μm, the thickness of the organic adhesive layer 5 becomes too thick, so that the thermal conductivity between the electrostatic chuck portion 4 and the base portion 8 is reduced. It is not preferable because sufficient cooling cannot be secured and cooling efficiency is lowered.

  Thus, by using the organic adhesive layer 5 as a sheet-like or film-like adhesive, the thickness of the organic adhesive layer 5 is made uniform, and the heat between the dielectric plate 2 and the base portion 8 is increased. Conductivity is uniform. Therefore, the cooling characteristics of the wafer W are made uniform, and the in-plane temperature of the wafer W is made uniform.

The insulating layer 6 is a sheet-like or film-like insulating material made of an insulating resin that can withstand the applied voltage in the electrostatic chuck portion 2. For example, polyimide, polyamide, aromatic polyamide, or the like is preferably used. The outer peripheral portion of the insulating layer 6 is set inside the outer peripheral portion of the dielectric plate 2.
Thus, by providing the insulating layer 6 on the inner side of the dielectric plate 2, the insulating layer 6 has improved plasma resistance against oxygen-based plasma and corrosion resistance against corrosive gas, and generation of particles and the like is also suppressed. The

The thickness of the insulating layer 6 is preferably 40 μm or more and 200 μm or less, more preferably 50 μm or more and 100 μm or less.
If the thickness of the insulating layer 6 is less than 40 μm, the insulation with respect to the electrode 3 for electrostatic attraction is lowered, the electrostatic attraction force is weakened, and the wafer W cannot be fixed to the mounting surface satisfactorily. On the other hand, if the thickness exceeds 200 μm, sufficient thermal conductivity between the electrostatic chuck portion 4 and the base portion 8 cannot be ensured, and the cooling efficiency decreases.

  The organic adhesive layer 7 adheres and fixes the electrostatic chuck portion 4 and the insulating layer 6 to the base portion 8 and covers the electrostatic adsorption electrode 3, the organic adhesive layer 5 and the insulating layer 6. By being provided, it is intended to protect from oxygen-based plasma and corrosive gas, and is preferably a material having high plasma resistance, high thermal conductivity, and high cooling efficiency from the base portion 8, such as heat resistance, A silicone resin composition which is a resin excellent in elasticity is preferred.

This silicone-based resin composition is a silicon compound having a siloxane bond (Si—O—Si). For example, it is preferable to use a silicone resin having a thermosetting temperature of 70 ° C. to 140 ° C.
Here, when the thermosetting temperature is lower than 70 ° C., when the electrostatic chuck portion 4 and the insulating layer 6 and the base portion 8 are joined, curing starts in the middle of the joining process, which hinders the joining work. On the other hand, if the thermosetting temperature exceeds 140 ° C., the difference in thermal expansion between the electrostatic chuck portion 4 and the insulating layer 6 and the base portion 8 cannot be absorbed, and the ceramic plate-like body 2 is preferable because not only the flatness on the mounting surface 2 is lowered, but also the bonding force between the electrostatic chuck portion 4 and the insulating layer 6 and the base portion 8 is lowered, and there is a possibility that peeling occurs between them. Absent.

The thermal conductivity of the organic adhesive layer 7 is preferably 0.25 W / mk or more, more preferably 0.5 W / mk or more.
Here, the reason why the thermal conductivity of the organic adhesive layer 7 is limited to 0.25 W / mk or more is that if the thermal conductivity is less than 0.25 W / mk, the cooling efficiency from the base portion 8 is lowered, and static This is because the wafer W placed on the upper surface 2a of the electric chuck portion 4 cannot be efficiently cooled.

The thickness of the organic adhesive layer 7 is preferably 50 μm or more and 500 μm or less.
If the thickness of the organic adhesive layer 7 is less than 50 μm, the organic adhesive layer 7 becomes too thin. As a result, sufficient adhesive strength cannot be secured, and the insulating layer 6 and the electrostatic chuck Peeling may occur between the portion 4 and the base portion 8. On the other hand, if the thickness exceeds 500 μm, sufficient thermal conductivity is ensured between the insulating layer 6 and the electrostatic chuck portion 4 and the base portion 8. This is because the cooling efficiency is lowered.

  Furthermore, by making the thermal conductivity of the organic adhesive layer 7 equal to or higher than the thermal conductivity of the organic adhesive layer 5 and the thermal conductivity of the insulating layer 6, the organic adhesive layer 7 The temperature increase of the layer 7 can be suppressed, and the variation in the in-plane temperature due to the variation in the thickness of the organic adhesive layer 7 can be reduced. As a result, the temperature of the wafer W to be mounted is made uniform. This is preferable because the in-plane temperature of the wafer W can be made uniform.

The organic adhesive layer 7 is a surface-coated nitride in which a coating layer made of silicon oxide (SiO ₂ ) is formed on the surface of a filler having an average particle size of 1 μm or more and 10 μm or less, for example, aluminum nitride (AlN) particles. It is preferable that aluminum (AlN) particles are contained.
The surface-coated aluminum nitride (AlN) particles are mixed to improve the thermal conductivity of the silicone resin, and the heat transfer rate of the organic adhesive layer 7 is controlled by adjusting the mixing rate. be able to.

  The base portion 8 is for adjusting the temperature by cooling the wafer W placed on the electrostatic chuck portion 4. The base portion 8 has a thick disk shape, and has an organic adhesive layer 5, an insulating layer. By cooling the electrostatic chuck portion 4 through the layer 6 and the organic adhesive layer 7, the wafer W can be adjusted to a desired temperature pattern. The base portion 8 is connected to an external high-frequency power source (not shown). In the base portion 8, water for cooling or temperature adjustment and a flow for circulating an insulating refrigerant are circulated as necessary. A road is formed.

The material constituting the base portion 8 is not particularly limited as long as it is any one of a metal excellent in thermal conductivity, electrical conductivity, and workability, and a metal-ceramic composite material. For example, aluminum (Al), copper (Cu), stainless steel (SUS) and the like are preferably used. The side surface of the base portion 8, that is, at least the surface exposed to plasma, is preferably coated with an alumite treatment or an insulating thermal spray material such as alumina or yttria.
In this base portion 8, at least the surface exposed to the plasma is subjected to an alumite treatment or an insulating film, so that the plasma resistance is improved and abnormal discharge is prevented. Will be improved. Moreover, since it becomes difficult for a surface to be damaged, generation | occurrence | production of a damage | wound can be prevented.

Next, a method for manufacturing the electrostatic chuck device 1 will be described.
Here, the manufacturing method of the dielectric plate 2 which is the main part of the electrostatic chuck device 1 will be described first.
The dielectric plate 2 is made by mixing a raw material powder of an insulating material, a raw material powder of conductive particles, and a dispersion medium to form a slurry, and spray-drying the slurry to form a granule. It can produce by baking under the following pressurization.
Next, this manufacturing method will be described in detail.

First, a raw material powder of an insulating material, a raw material powder of conductive particles, and a dispersion medium are mixed to form a slurry.
As a dispersion medium used for this slurry, water and an organic solvent can be used. Examples of the organic solvent include monohydric alcohols such as methanol, ethanol, 2-propanol, butanol, and octanol and modified products thereof; alcohols belonging to monocyclic monoterpenes such as α-terpineol; carbs such as butyl carbitol. Tolls; Esters such as ethyl acetate, butyl acetate, ethyl lactate, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, butyl carbitol acetate, γ-butyrolactone; diethyl ether, ethylene glycol monomethyl ether (methyl cellosolve), Ethylene glycol monoethyl ether (ethyl cellosolve), ethylene glycol monobutyl ether (butyl cellosolve), diethylene glycol monomethyl ether, diethyl Ethers such as lenglycol monoethyl ether; ketones such as acetone, methyl ethyl ketone, methyl isobutyl ketone, acetylacetone and cyclohexanone; aromatic hydrocarbons such as benzene, toluene, xylene and ethylbenzene; dimethylformamide, N, N-dimethylacetamide, Amides such as N-methylpyrrolidone are preferably used, and one or more of these solvents can be used.

A dispersant or a binder may be added when preparing this slurry.
As the dispersant and binder, for example, polycarboxylic acid salts such as polycarboxylic acid ammonium salt, organic polymers such as polyethylene glycol, polyvinyl alcohol, and polyvinylpyrrolidone are used.
Although it does not specifically limit as a dispersion process, A dispersion process is made | formed using dispersers, such as an ultrasonic homogenizer, a bead mill, and an ultrahigh pressure grinder.
If the raw material powder of insulating particles and the raw material powder of conductive particles are not mixed uniformly, the distribution of the conductive particles in the dielectric material obtained by the composite becomes non-uniform, and the electrical characteristics Since reproducibility and uniformity in the sintered body may be deteriorated, it is preferable to select a dispersion medium, a dispersant, and dispersion treatment conditions and to mix them uniformly.

The slurry is then spray dried by a spray drying method. As the spray drying apparatus, a spray dryer or the like is preferably used.
Here, the slurry is sprayed into a heated air stream and dried, so that only the dispersion medium is scattered in the insulating material while the insulating material and the conductive particles in the slurry are uniformly dispersed. A granulated powder in which conductive particles are uniformly dispersed is obtained.

Next, this granulated powder is fired in a predetermined firing atmosphere under a pressure of 1 MPa or more and 100 MPa or less to obtain a dielectric plate 2 made of a composite sintered body.
Here, as the firing atmosphere, when conductive silicon carbide (SiC) particles, molybdenum (Mo) particles, tungsten (W) particles, tantalum (Ta) particles, or the like is used as the conductive particles, oxidation of these is prevented. Since it is necessary, a non-oxidizing atmosphere, for example, an argon (Ar) atmosphere, a nitrogen (N ₂ ) atmosphere, or the like is preferable.

  Here, the reason for setting the pressure during firing to 1 MPa or more and 100 MPa or less is that when the pressure is less than 1 MPa, the density of the obtained sintered body is lowered, the corrosion resistance is lowered, and a dense sintered body is obtained. This is because the conductivity is increased and the use is limited when used as a member for a semiconductor manufacturing apparatus, and versatility is impaired. On the other hand, when the pressure exceeds 100 MPa, there is no problem with the density and conductivity of the obtained sintered body. This is because restrictions occur.

Moreover, the normal sintering temperature used for the insulating material to be used can be applied to the firing temperature. For example, when aluminum oxide is used as the insulating material, the temperature is preferably 1500 ° C. or higher and 1900 ° C. or lower.
The reason why the granulated powder is preferably fired at 1500 ° C. or more and 1900 ° C. or less is that if the firing temperature is less than 1500 ° C., the sintering is insufficient and a dense composite sintered body may not be obtained. On the other hand, if the firing temperature exceeds 1900 ° C., there is a risk that sintering proceeds excessively and abnormal grain growth or the like occurs, and as a result, a dense composite sintered body may not be obtained. Because.
Moreover, the firing time should just be sufficient time to obtain a precise | minute sintered compact, for example, is 1 to 6 hours.

  Thus, the density of the composite sintered body is improved while suppressing the grain growth of each of the insulating material and the conductive particles by simultaneously applying pressure of 1 MPa or more and 100 MPa or less when the granulated powder is fired. Can do.

Since the particle size distribution of the conductive particles in this composite sintered body changes depending on the raw materials used and the sintering of the conductive particles in the firing process, etc., the target characteristics can be adjusted by adjusting the raw materials used and the firing conditions. Can be obtained.
Control methods at the slurry production stage include a method using a conductive particle material having a wide particle size distribution, a method using a mixture of materials having different particle diameters, a mixture of an insulating material material and a conductive particle material. In this case, a method for controlling the aggregation state of the conductive particles, a method combining these, or the like is appropriately used.
Examples of the method of controlling by firing conditions include molding conditions, pressure in firing, atmosphere, firing temperature, and the like.

  Next, the lower surface 2b of the dielectric plate 2 obtained in this manner is degreased and washed using, for example, acetone, and a film forming method such as a sputtering method or a vapor deposition method or a screen printing method is used on the lower surface 2b. The electrostatic chucking electrode 3 is formed using a coating method to form an electrostatic chuck portion 4. The thickness of the dielectric plate 2 is preferably increased in consideration of the amount of grinding removal after the base portion 8 is bonded.

On the other hand, any one of a metal and a metal-ceramic composite material is machined, an alumite treatment or an insulating film is formed as necessary, and then degreased and washed with, for example, acetone, to obtain a base portion 8. And
Next, a sheet-like or film-like organic adhesive and a sheet-like or film-like insulating material are prepared, and these are bonded together using a laminating apparatus and temporarily bonded, with a sheet-like or film-like organic adhesive. Use insulating material.

Next, this insulating material with an organic adhesive is die-cut into a smaller diameter than the dielectric plate 2 using a press molding machine.
Next, the punched insulating material with an organic adhesive is attached to the electrostatic chucking electrode 3 of the electrostatic chuck portion 4 and is used under atmospheric pressure or 1 Pa using a thermocompression bonding apparatus such as a vacuum hot press machine. Under the following reduced pressure, pressurization (thermocompression bonding) is performed simultaneously with heating, and the organic adhesive layer 5 and the insulating layer 6 are thermocompression bonded onto the electrostatic chucking electrode 3 of the electrostatic chuck portion 4.

Next, the joint surface of the base portion 8 with the insulating layer 6 on the electrostatic chuck portion 4 is degreased and washed using, for example, acetone, and a silicone resin composition is used on the joint surface using, for example, a bar coater, Apply to a certain thickness.
Next, the insulating layer 6 on the electrostatic chuck portion 4 is placed on the coated surface, and the silicone resin composition is heated and cured in this state. Thereby, the cured body of the silicone resin composition becomes the organic adhesive layer 7.

Next, the upper surface 2a of the dielectric plate 2 is ground to adjust the thickness of the dielectric plate 2 to a desired thickness, and the upper surface 2a of the dielectric plate 2 is used as a mounting surface on which the wafer W is mounted.
As described above, the electrostatic chuck device 1 of the present embodiment can be obtained.

Next, the characteristics of the dielectric material and the electrical characteristics of the dielectric plate 2 will be described.
[Characteristics of dielectric materials]
The dielectric material constituting the dielectric plate 2 that is the main part of the electrostatic chuck device 1 of the present embodiment, that is, the electrical characteristics such as the dielectric strength and dielectric constant of the composite sintered body are dispersed in the insulating material. The conductivity varies depending on various factors such as the dispersion state of the conductive particles, the size of the particles of the insulating material, the ratio of the conductive particles in the insulating material, the particle size distribution of the particles of the insulating material, etc. It is difficult to uniquely determine the relationship between particle size distribution and electrical characteristics.
Therefore, a composite sintered body in which the particle size distribution of the conductive particles in the insulating material is changed by various particle size distribution methods is manufactured, and the optimum value is experimentally obtained from the evaluation result of the electrical characteristics. The method is used.

Among them, since the reproducibility of the experiment is good, the manufacturing conditions of the composite sintered body are made constant, and several types of conductive particles with different particle diameters are used as the conductive particles used as the raw material. A method of obtaining the optimum value by changing the ratio of the active particles is preferably used.
In addition, the optimum type and particle size of the conductive particles and the optimal ratio of the conductive particles in the insulating material are required, and in the case of test production or mass production of a composite sintered body having the same characteristics as this, By changing the manufacturing conditions of the conductive particles themselves so as to obtain an optimal particle size distribution, the electrical characteristics of the composite sintered body can be optimized even when one kind of conductive particles and insulating material is used. be able to.

[Electrical characteristics of dielectric plate]
(1) Withstand voltage characteristic The withstand voltage characteristic of the dielectric plate 2 is measured by forming or placing a measurement electrode on the upper surface 2 a of the dielectric plate 2, and between the measurement electrode and the electrostatic adsorption electrode 3. This is done by measuring the current flowing through the dielectric plate 2 while gradually increasing the DC voltage applied to the.

Here, a silicon wafer having an area of 10 cm ² or more is used as the electrode in consideration of the following “confirmation that dielectric breakdown is not formed in a pinhole”.
The withstand voltage of the dielectric plate 2, that is, the voltage at which the current value due to voltage application increases due to dielectric breakdown and the current value becomes 1 nA / cm ² or more is higher than the operating voltage and withstand voltage specifications of the dielectric plate 2. Since it is necessary to have a high value, it is preferably 5 kV / mm or more, more preferably 8 kV / mm or more, and further preferably 10 kV / mm or more.

By the way, when a DC voltage is applied to these electrodes, electric charges are stored in these electrodes, so that the current value temporarily rises to 1 nA / cm ² or more as the voltage increases. Here, after a certain amount of charge is stored in these electrodes, the current value decreases. The current value measured here is the current value after the charge is stored. In this process, when the dielectric breakdown proceeds in the dielectric plate 2, the current value continues to rise after the charge is stored due to the influence of the dielectric breakdown, and as a result, the current value gradually increases. It becomes.

(2) Dielectric breakdown characteristics The dielectric breakdown characteristics of the dielectric plate 2 are measured on the electrode of the dielectric plate 2, for example, a silicon wafer having an area of 10 cm ² or more after measuring the withstand voltage. After the above withstand voltage measurement, there is a method of measuring the current value by applying the same voltage again using a measurement electrode smaller than the electrode used for the withstand voltage measurement, for example, a silicon chip cut into a 5 mm square. .

In a normal insulator, dielectric breakdown occurs instantaneously, and increases instantaneously until the allowable current value of the power source to which the voltage is applied is exceeded or the material and surrounding equipment are damaged by heat generation or discharge.
On the other hand, in the dielectric plate 2 of the present embodiment, the current value gradually increases even when the dielectric breakdown of the dielectric plate 2 proceeds. Signs of dielectric breakdown of the plate 2 can be detected. In addition, since dielectric breakdown is an irreversible phenomenon, even if dielectric breakdown has progressed during past use, measure the voltage again and compare it with the result measured before dielectric breakdown occurs. By confirming that the current value is increased, a sign of dielectric breakdown can be detected.

In the dielectric plate 2 of the present embodiment, when measuring the withstand voltage characteristic, from the time when a DC voltage with a current value of 1 nA / cm ² is applied between the measurement electrode and the electrostatic adsorption electrode 3. The time until the current flowing between the measurement electrode and the electrostatic adsorption electrode 3 reaches 100 nA / cm ² when this DC voltage is maintained is preferably 1 second or more, and preferably 3 seconds or more. More preferably, it is more preferably 10 seconds or more, and most preferably 60 seconds or more.
Here, the current value for starting the measurement of the time required to increase the current value due to dielectric breakdown is set to 1 nA / cm ^2, and if it is 1 nA / cm ² or less, it is difficult to distinguish it from noise in the measurement system. Because it becomes.
In addition, the current value for ending the measurement of the time required to increase the current value due to dielectric breakdown was set to 100 nA / cm ² because the electrostatic chuck device used to absorb the silicon wafer when the current value was 100 nA / cm ² or more. This is because when a voltage is applied to the entire wafer, the total amount of flowing current values may become too large.

If the time required for the above is preferably 1 second or longer, more preferably 3 seconds or longer, more preferably 10 seconds or longer, and most preferably 60 seconds or longer, it was placed on the dielectric plate 2 with a current due to dielectric breakdown. The device can be stopped by detecting the dielectric breakdown of the dielectric plate 2 before the device in the wafer is broken or before another device is damaged by the electric discharge.
In addition, since dielectric breakdown is an irreversible phenomenon, even when the withstand voltage characteristic has deteriorated during past use, the dielectric plate 2 is used at a voltage higher than the operating voltage before the dielectric plate 2 is used. A sign of dielectric breakdown of the dielectric plate 2 can be known by applying a voltage equal to or lower than the withstand voltage value of and measuring the current value.

  Further, when the dielectric plate 2 is used as a base of the electrostatic chuck device 1, a voltage is applied to a wide area after the wafer W is placed on the upper surface 2a of the dielectric plate 2, so that the total amount of current value is Therefore, the accuracy of the current value detected per unit area can be increased. In addition, by combining this dielectric plate 2 with a highly accurate ammeter capable of detecting a small current value, it is possible to detect a sign of dielectric breakdown at an earlier stage.

(3) Fractal property of dielectric breakdown By widening the particle size distribution of the conductive particles dispersed in the insulating material of the dielectric plate 2, the fractal property of the connection of the conductive particles and the fractal property of the dielectric breakdown shape. Can be high.
Here, the fractal property of the dielectric breakdown refers to the degree of branching of the conductive path that occurs in the dielectric plate 2 due to the dielectric breakdown, and the case where there are many branches of the conductive path is referred to as high fractal property.
In the case where the dielectric breakdown portion is formed in a pinhole shape on the dielectric plate 2, the pinhole is formed at one point or a plurality of points. There is a difference.

For convenience, there are a method for evaluating the fractal property by quantification, and there are a method for evaluating a variation in current and a method for evaluating a branch of a conductive path for more detailed examination.
As a method for evaluating the variation in current, a measurement terminal, for example, a silicon chip cut to 5 mm square is placed on the upper surface 2a of the dielectric plate 2, and the distribution of current values at a plurality of locations on the upper surface 2a is measured. Variation, that is, when the ratio (Amax / Amin) between the maximum value (Amax) and the minimum value (Amin) of the current value is less than a predetermined value, it is determined that “fractal property is present”. A method of judging “no fractal property” is adopted.

When the current value is simply measured in this manner, when the location of the dielectric breakdown is formed in a pinhole shape, the pinhole is formed at one point or a plurality of points. Amax / Amin) has a difference of 1000 times or more.
On the other hand, when the location of dielectric breakdown is not formed in a pinhole shape, the difference in the ratio (Amax / Amin) becomes small.
Thus, when the dielectric plate 2 breaks down, in order for the device not to be damaged due to current concentration, a silicon chip cut to 5 mm square is placed on the upper surface 2a of the dielectric plate 2 and the distribution of current values is increased. It is preferable that the variation in measurement, that is, the ratio (Amax / Amin) between the maximum value (Amax) and the minimum value (Amin) of the current value is 1000 times or less, and at all measurement points simultaneously due to dielectric breakdown More preferably, the current value is increased.

As a method for evaluating the branching of the conductive path, a direct current voltage is applied to the dielectric plate 2 to reach 100 nA / cm ^2, and then the conductive path caused by dielectric breakdown on the surface of the dielectric plate 2 is used. The method of measuring the number is taken.
As a method of measuring the number of conductive paths, in addition to a method of measuring by scanning a needle-like electrode, a method of using an AFM atomic force microscope, a method of energizing using a chemical reaction such as electrolysis and iodine starch reaction A method of detecting a location, a method of making a determination using charge contrast in SEM (scanning electron microscope) observation, and the like can also be used.

Here, when the dielectric plate 2 breaks down, it is preferable that ten or more conductive paths are formed on the surface of the dielectric plate 2 so that the device is not damaged due to current concentration. More preferably, it is formed more than 100 places per 1 cm ² . Thus, the larger the number of conductive paths, the more current can be distributed. Therefore, damage to devices on the wafer and the electrostatic chuck device itself, and various devices such as semiconductor manufacturing equipment using the electrostatic chuck device Can be prevented.

  Further, when the dielectric plate 2 is used as a base body of the electrostatic chuck device 1, the electrostatic chuck device 1 has a voltage lower than the voltage applied at the time of evaluation. Destruction is likely to occur gradually due to damage caused by plasma or the like or deterioration due to repeated use. Therefore, if the characteristic that the dielectric breakdown gradually proceeds is obtained by these evaluations, the characteristic that the dielectric breakdown gradually proceeds even when used as the electrostatic chuck device 1 can be obtained.

(3) Dielectric constant When the dielectric plate 2 is used as a substrate of the electrostatic chuck device 1, the dielectric plate 2 has a higher dielectric constant in order to increase the attractive force of the electrostatic chuck device 1. It is preferably 11 or more, more preferably 13 or more, and even more preferably 15 or more.
In the dielectric plate 2 having a high dielectric constant, the withstand voltage may be lowered, so that it is preferable to adjust appropriately according to the required characteristics.

As described above, according to the electrostatic chuck device 1 of the present embodiment, the electrostatic chucking electrode 3 is formed on the lower surface 2b of the dielectric plate 2, and the measurement electrode is formed on the upper surface 2a of the dielectric plate 2. When a DC voltage is maintained from the time when a DC voltage with a current value of 1 nA / cm ² is applied between the measurement electrode and the electrostatic adsorption electrode 3, the current is 100 nA / Since the time to reach cm ² is 1 second or longer, the dielectric breakdown of the dielectric plate 2 can be allowed to proceed gently. Therefore, by measuring the current or electric resistance flowing through the dielectric plate 2 before or during use of the dielectric plate 2, a sign of dielectric breakdown can be known from the value of the current or electric resistance. As a result, the dielectric breakdown of the dielectric plate 2 can be predicted in advance.

  FIG. 2 is a cross-sectional view showing a modification of the electrostatic chuck device of the present embodiment. The electrostatic chuck device 11 is different from the electrostatic chuck device 1 described above in that the lower surface of the electrostatic chucking electrode 3 and A sheet-like or film-like (first) organic adhesive layer 12 is formed so as to cover the side surface, and a sheet-like or film-like insulation is provided so as to cover the lower surface and the side surface of the organic adhesive layer 12. A base 13 is attached to the insulating layer 13 and the electrostatic chuck portion 4 that support the electrostatic chuck portion 4 and cool the wafer W via the organic adhesive layer 7. The point is that the part 8 is adhered.

In the electrostatic chuck device 11 as well, the dielectric breakdown of the dielectric plate 2 can be caused to proceed gently in the same manner as the electrostatic chuck device 1 described above. Therefore, by measuring the current or electric resistance flowing through the dielectric plate 2 before or during use of the dielectric plate 2, a sign of dielectric breakdown can be known from the value of the current or electric resistance. As a result, the dielectric breakdown of the dielectric plate 2 can be predicted in advance.
In addition, a sheet-like or film-like organic adhesive layer 12 is formed so as to cover the lower surface and the side surface of the electrostatic adsorption electrode 3, and the sheet-like or side surface is covered so as to cover the lower surface and the side surface of the organic adhesive layer 12. Since the film-like insulating layer 13 is adhered, the withstand voltage of the electrostatic adsorption electrode 3 can be improved.

  FIG. 3 is a cross-sectional view showing another modification of the electrostatic chuck device of the present embodiment. The electrostatic chuck device 21 differs from the electrostatic chuck device 1 described above in that the electrostatic chucking electrode 3 A support plate 22 made of insulating ceramics is provided so as to cover the lower surface, and this support plate 22 is integrated with the dielectric plate 2 and bonded to the base portion 8 via the organic adhesive layer 7. It is a point.

The insulating ceramic that is a component of the support plate 22 may be an insulating ceramic having the same composition as the insulating ceramic used for the dielectric plate 2 described above, or may be an insulating ceramic having a different composition. .
As such an insulating ceramic, aluminum oxide (Al ₂ O ₃ ), yttrium oxide (Y ₂ O ₃ ), silicon oxide (SiO ₂ ), zirconium oxide (ZrO ₂ ), aluminum nitride (AlN), silicon nitride ( Si ₃ N ₄ ), mullite (3Al ₂ O ₃ .2SiO ₂ ), hafnium oxide (HfO ₂ ), scandium oxide (Sc ₂ O ₃ ), neodymium oxide (Nd ₂ O ₃ ), niobium oxide (Nb ₂ O ₅ ) , An oxide composed of only one selected from the group consisting of samarium oxide (Sm ₂ O ₃ ), ytterbium oxide (Yb ₂ O ₃ ), erbium oxide (Er ₂ O ₃ ), cerium oxide (CeO ₂ ), or 2 A composite oxide obtained by mixing seeds or more is preferred.

Here, when the thickness of the support plate 22 is 1.5 times or less the thickness of the dielectric plate 2, the support plate 22 is too thin to insulate the support plate 22 from the dielectric plate 2. There is a possibility of destruction. Therefore, it is preferable to use an insulating ceramic having the same characteristics as the insulating ceramic used for the dielectric plate 2 for the support plate 22.
Here, the electrostatic chucking electrode 3 is sandwiched and integrated by the support plate 22 and the dielectric plate 2, but an annular insulating material is provided on the periphery of the electrostatic chucking electrode 3, and these electrostatic chucking The electrode 3 and the annular insulating material may be sandwiched and integrated by the support plate 22 and the dielectric plate 2.

  As a method of integrating the support plate 22 and the dielectric plate 2, an electrode material to be used as the electrostatic adsorption electrode 3 is applied to the lower surface 2 b of the dielectric plate 2, and the support plate 22 is covered so as to cover the electrode material. A method of integrating the dielectric plate 2, the electrostatic attraction electrode 3 and the support plate 22 by placing the insulating ceramic powder to be obtained and firing them at a predetermined temperature, or the dielectric plate 2 is coated with an electrode material to be the electrostatic adsorption electrode 3, and a material containing insulating ceramic powder to be the support plate 22 is coated so as to cover the electrode material. A known method such as a method of integrating the dielectric plate 2, the electrostatic attraction electrode 3 and the support plate 22 can be used as appropriate by hot pressing.

  Here, the dielectric material 2 and the electrode material are fired at a predetermined temperature to produce the dielectric plate 2 and the electrostatic adsorption electrode 3, and the dielectric plate 2, the electrostatic adsorption electrode 3 and the insulating ceramic powder. When the body is fired at a predetermined temperature to integrate the dielectric plate 2, the electrostatic adsorption electrode 3 and the support plate 22, the electrostatic adsorption electrode 3 and the dielectric plate 2 are deformed during firing, and this deformation The distance between the electrostatic adsorption electrode 3 and the lower surface 2b of the dielectric plate 2 may vary. When such a variation occurs, a defect due to a decrease in withstand voltage is likely to occur at a location where the distance between the electrostatic attraction electrode 3 and the lower surface 2b of the dielectric plate 2 is short.

  In this electrostatic chuck device 21, the dielectric breakdown of the dielectric plate 2 can be caused to proceed gently. Therefore, even in the above case, the electric resistance of the dielectric plate 2 is measured before or during use. By doing so, dielectric breakdown can be predicted in advance. Therefore, by using this electrostatic chuck device 21, the dielectric breakdown of the dielectric plate 2 can be gently advanced, and as a result, the semiconductor manufacturing apparatus and semiconductor device to which this electrostatic chuck device 21 is applied are damaged. There is no fear.

  EXAMPLES Hereinafter, although an Example and a comparative example demonstrate this invention further more concretely, this invention is not limited to a following example.

"Example 1"
Mass of silicon carbide (SiC) powder having an average particle size of 0.05 μm, silicon carbide (SiC) powder having an average particle size of 0.5 μm, and silicon carbide (SiC) powder having an average particle size of 1.0 μm By mixing at a ratio of 50: 45: 5, SiC mixed powder was obtained.
Then, the SiC powder mixture is 8% by volume, the average aluminum oxide _(Al 2 _{O 3)} particle size 0.1μm powder were weighed so as to be 92% by volume, these SiC powder mix and _Al 2 _{O 3} The powder was put into pure water, dispersed for 5 hours with an ultrasonic disperser, and further dispersed for 4 hours with a planetary ball mill to obtain a dispersion.

Next, this dispersion was dried at 200 ° C. using a spray dryer to obtain Al ₂ O ₃ —SiC composite powder.
Next, this Al ₂ O ₃ —SiC composite powder was baked for 2 hours at 1650 ° C. under a pressure of 25 MPa in an argon (Ar) atmosphere using a hot press to obtain an Al ₂ O ₃ —SiC composite sintered body. Was made.
This composite sintered body was processed into a disk shape having a diameter of 100 mm and a thickness of 1.0 mm to produce a dielectric plate made of the Al ₂ O ₃ —SiC composite sintered body of Example 1.

"Example 2"
A dielectric comprising the Al ₂ O ₃ —SiC composite sintered body of Example 2 in the same manner as in Example 1 except that the SiC mixed powder was 11% by volume and the Al ₂ O ₃ powder was 89% by volume. A plate was made.

"Example 3"
A dielectric comprising the Al ₂ O ₃ —SiC composite sintered body of Example 3 in the same manner as in Example 1 except that the SiC mixed powder was 9% by volume and the Al ₂ O ₃ powder was 91% by volume. A plate was made.

Example 4
Ultrasonic dispersion with 9% by volume of SiC powder having an average particle size of 0.05 μm, 91% by volume of Al ₂ O ₃ powder having an average particle size of 0.1 μm, a firing temperature of 1800 ° C., and a pressure of 40 MPa. A dielectric plate made of the Al ₂ O ₃ —SiC composite sintered body of Example 4 was prepared in the same manner as in Example 1 except that the dispersion process in the planetary ball mill was not performed after the dispersion process in the machine. did.

"Example 5"
An SiC powder having an average particle size of 0.03 μm, an SiC powder having an average particle size of 0.05 μm, and an SiC powder having an average particle size of 0.1 μm are mixed at a mass ratio of 1: 1: 1. Thus, a SiC mixed powder was obtained.
Next, in the same manner as in Example 1, except that the SiC mixed powder was 10% by volume and the aluminum oxide (Al ₂ O ₃ ) powder having an average particle diameter of 0.1 μm was 90% by volume, Example 5 A dielectric plate made of an Al ₂ O ₃ —SiC composite sintered body was produced.

  In addition, the content rate (10 volume%) of SiC mixed powder produced the sample which changed content of the SiC mixed powder from 4 volume% to 13 volume% at 1 volume% intervals, and used these samples. When a dielectric plate was produced in the same manner as in Example 1, the content was set to 10% by volume, which is 3% by volume less than the content at which the electrical characteristics change from the insulator to the conductor.

"Example 6"
A dielectric comprising the Al ₂ O ₃ —SiC composite sintered body of Example 6 in the same manner as in Example 1 except that the SiC mixed powder was 5% by volume and the Al ₂ O ₃ powder was 95% by volume. A plate was made.

"Example 7"
A dielectric comprising the Al ₂ O ₃ —SiC composite sintered body of Example 7 in the same manner as in Example 1 except that the SiC mixed powder was 12% by volume and the Al ₂ O ₃ powder was 88% by volume. A plate was made.

"Example 8"
A SiC mixed powder was obtained in the same manner as in Example 1.
Next, this SiC mixed powder was weighed so that the volume of yttrium oxide (Y ₂ O ₃ ) powder having an average particle diameter of 0.1 μm was 10 volume% and 90 volume%, and these SiC mixed powder and Y ₂ O ₃ The powder was put into ion-exchanged water in a ball mill using Teflon (registered trademark) (polytetrafluoroethylene) balls and a polyethylene pot, and dispersed for 48 hours to obtain a dispersion.

Next, this dispersion was dried at 200 ° C. using a spray dryer to obtain a Y ₂ O ₃ —SiC composite powder.
Next, this Y ₂ O ₃ —SiC composite powder was baked for 1 hour at 1600 ° C. under a pressure of 40 MPa in an argon (Ar) atmosphere using a hot press, and a Y ₂ O ₃ —SiC composite sintered body was obtained. Was made.
This composite sintered body was processed into a disk shape having a diameter of 100 mm and a thickness of 1.0 mm to produce a dielectric plate made of the Y ₂ O ₃ —SiC composite sintered body of Example 8.

  Note that the content of SiC mixed powder (10% by volume) was determined by preparing a sample in which the content of SiC mixed powder was changed from 8% by volume to 15% by volume at intervals of 1% by the same method. When the plate was produced, the content was set to 10% by volume, which is 3% by volume less than the content at which the electrical characteristics change from the insulator to the conductor.

"Example 9"
A SiC mixed powder was obtained in the same manner as in Example 1.
Next, 9% by volume of this SiC mixed powder, 85% by volume of silicon nitride (Si ₃ N ₄ ) powder having an average particle size of 0.2 μm, and yttrium oxide (Y) having an average particle size of 0.05 μm as a sintering aid. ₂ O ₃₎ were weighed so as powder becomes 6 vol%, these SiC mixed powder, the _Si 3 _{N 4} powder and _Y 2 _{O 3} powder, Teflon (polytetrafluoroethylene) The solution was put into ethanol in a ball mill using a ball and a polyethylene pot and dispersed for 48 hours to obtain a dispersion.

Subsequently, ethanol was extracted from the above dispersion using an evaporator, and then vacuum-dried to obtain a Si ₃ N ₄ —SiC composite powder.
Next, this Si ₃ N ₄ —SiC composite powder was baked at 1800 ° C. under a pressure of 35 MPa for 2 hours in a nitrogen (N ₂ ) atmosphere using a hot press, and the Si ₃ N ₄ —SiC composite sintered The body was made.
This composite sintered body was processed into a disk shape having a diameter of 100 mm and a thickness of 1.0 mm to produce a dielectric plate made of the Si ₃ N ₄ —SiC composite sintered body of Example 9.

  Note that the content of SiC mixed powder (9% by volume) was determined by preparing a sample in which the content of SiC mixed powder was changed from 5% by volume to 15% by volume at intervals of 1% by the same method. When the plate was produced, the content was 9% by volume, which is 3% by volume less than the content at which the electrical characteristics change from the insulator to the conductor.

“Comparative Example 1”
A commercially available Al ₂ O ₃ sintered body having a purity of 99.9% was processed into a disk shape having a diameter of 100 mm and a thickness of 1.0 mm to produce a dielectric plate made of the Al ₂ O ₃ sintered body of Comparative Example 1. .

“Comparative Example 2”
The Al ₂ O ₃ —SiC composite sintering of Comparative Example 2 was performed in the same manner as in Example 1 except that only silicon carbide (SiC) powder having an average particle diameter of 0.3 μm was used instead of the SiC mixed powder. A dielectric plate made of a body was produced.

“Comparative Example 3”
9% by volume of SiC powder having an average particle size of 0.05 .mu.m, the _Al 2 _{O 3} powder having an average particle size of 0.1μm and 91% by volume, in the same manner as in Example 1, _Al 2 _{O 3} of Comparative Example 3 A dielectric plate made of a SiC composite sintered body was produced.

“Comparative Example 4”
A dielectric comprising the Al ₂ O ₃ —SiC composite sintered body of Comparative Example 4 in the same manner as in Example 1 except that the SiC mixed powder was 1% by volume and the Al ₂ O ₃ powder was 99% by volume. A plate was made.

“Comparative Example 5”
A dielectric comprising the Al ₂ O ₃ —SiC composite sintered body of Comparative Example 5 in the same manner as in Example 1 except that the SiC mixed powder was 13% by volume and the Al ₂ O ₃ powder was 87% by volume. A plate was made.

“Comparative Example 6”
The yttrium oxide _(Y 2 _{O 3)} powder having an average particle diameter of 0.1 [mu] m, using a hot press, argon (Ar) atmosphere, 1600 ° C., baked for one hour at a pressure 40 _MPa, Y 2 _{O 3} sintered A ligature was prepared.
This sintered body was processed into a disk shape having a diameter of 100 mm and a thickness of 1.0 mm to produce a dielectric plate made of the Y ₂ O ₃ sintered body of Comparative Example 6.

“Comparative Example 7”
Silicon nitride (Si ₃ N ₄ ) powder with an average particle size of 0.2 μm is 93% by volume, and yttrium oxide (Y ₂ O ₃ ) powder with an average particle size of 0.05 μm is 7% by volume as a sintering aid. The Si ₃ N ₄ powder and the Y ₂ O ₃ powder were put into ethanol in a ball mill using a Teflon (registered trademark) (polytetrafluoroethylene) ball and a polyethylene pot for 48 hours. Dispersion treatment was performed to obtain a dispersion.

Subsequently, ethanol was extracted from the above dispersion using an evaporator, and then vacuum-dried to obtain Si ₃ N ₄ powder.
Next, this Si ₃ N ₄ powder was baked for 2 hours at 1800 ° C. under a pressure of 35 MPa in a nitrogen (N ₂ ) atmosphere using a hot press to prepare a Si ₃ N ₄ sintered body.
This sintered body was processed into a disk shape having a diameter of 100 mm and a thickness of 1.0 mm to produce a dielectric plate made of the Si ₃ N ₄ sintered body of Comparative Example 7.

"Evaluation of dielectric plates"
(1) Particle size and particle size distribution The particle size and particle size distribution of the SiC particles in each of the dielectric plates of Examples 1 to 9 and Comparative Examples 2 to 5 are measured by the SEM observation method, and this measurement result is image-analyzed. Thus, the particle diameter corresponding to the area of the circle was calculated.
Here, the particle diameters D10, D50, D90, the ratio (D90 / D50) and the ratio (D90 / D10) of the SiC particles were obtained.
The measurement results are shown in Table 1.

In addition, since there are cases where particles of 0.04 μm or less cannot be determined by measurement by the SEM observation method, “presence / absence of conductive fine particles” for each of the dielectric plates of Examples 1 to 9 and Comparative Examples 2 to 5, that is, It was observed by a TEM observation method whether or not conductive fine particles of 0.04 μm or less were contained in the dielectric plate in an amount of 0.001% to 5%.
Here, the particle diameter of each of the 500 conductive particles is measured, and when the conductive fine particles of 0.04 μm or less are contained in 0.001% or more and 5% or less, it is determined that the conductive fine particles are present. A case where the conductive fine particles were not contained in an amount of 0.001% or more and 5% or less was judged to be no conductive fine particles, and was evaluated as “x”.

(2) Dielectric strength and dielectric breakdown time The dielectric plates of Examples 1 to 9 and Comparative Examples 1 to 7 are sandwiched between 35 mm square silicon wafers so that creeping discharge between the electrodes does not occur. Up to 10 kV / mm Every 1 kV / mm, the voltage was increased to a predetermined measurement voltage every 0.5 kV / mm at 10 kV / mm or more, and the current value after holding for 1 minute when the predetermined measurement voltage was applied was measured.
Here, when the current value after holding for 1 minute was 1 nA / cm ² or less, the voltage was further increased by 1 kV / mm or 0.5 kV / mm, and the measurement was continued.
In addition, when the current value is 1 nA / cm ² or more and the ammeter value decreases after 1 minute, the measurement is continued by increasing the voltage after holding the current meter to 1 nA / cm ² . .

Further, when the current value was increased and exceeded 100 nA / cm ² , the applied voltage was set to a withstand voltage value, and the dielectric breakdown time was set to 1 second or less.
In the case where the current value is increasing and the current value is 100 nA / cm ² or less, the time from when the voltage starts to reach 100 nA / cm ² is defined as the dielectric breakdown time.
In addition, when it did not exceed 100 nA / cm ² even after 1 minute or more after holding, the held voltage was taken as a withstand voltage value, and the dielectric breakdown time was set to 60 seconds or more.
The measurement results are shown in Table 2.

(3) Fractal characteristics of dielectric breakdown A 12 mm square silicon chip was placed as an electrode at the measurement site of the withstand voltage characteristics, and the current value distribution of the dielectric plate was measured using this electrode. Evaluation was performed.
Here, when it was confirmed that the applied voltage was 100 nA / cm ² or more with the withstand voltage value as the upper limit, the measurement at the measurement point was completed. This operation was repeated, and nine current values were measured from the place where the dielectric breakdown test was performed.

When the ratio of the maximum current value to the minimum value (Amax / Amin) at 9 points measured was 1000 or less, it was judged that there was fractal property, and the evaluation result was “◯”.
In addition, when the ratio between the maximum value and the minimum value (Amax / Amin) is greater than 1000, a detailed distribution of current values is measured in order to confirm that dielectric breakdown occurs in a pinhole shape. did. Therefore, measurement is performed while moving a 12 mm square silicon chip at intervals of 2 mm, and the area of a region having a current value of 100 nA / cm ² or more is obtained. If this area is a spot of 4 mm ² or less, dielectric breakdown occurs. Since it occurred in a pinhole shape, it was judged that there was no fractal property, and the evaluation result was “x”. Even if the location where dielectric breakdown occurs can be visually confirmed due to damage, etc., it is judged that there is no fractal property. In this case as well, the evaluation result is “x”. Is not generated in the form of a pinhole, but “Δ” is indicated when the variation in current caused by dielectric breakdown is large.
The measurement results are shown in Table 2.

(4) Number of conductive paths When evaluating the fractal nature of dielectric breakdown, nine points were measured to determine whether the number of conductive path branches (number of conductive paths) caused by dielectric breakdown was sufficient. Among these, the number of conductive paths formed (number of conductive paths) was calculated by scanning a needle-shaped measurement probe in a 10 mm square range of the measurement point having the largest current value.
Here, when there are many conductive paths within a 1 mm square range, the number of conductive paths is regarded as 100 or more, and “> 100” is described.
The measurement results are shown in Table 2.

(5) Dielectric Constant The dielectric constant at 1 kHz of each of the dielectric plates of Examples 1 to 9 and Comparative Examples 1 to 7 was measured using a dielectric measurement system 126096W (manufactured by Toyo Technica).
The measurement results are shown in Table 2.

  According to Tables 1 and 2, in the dielectric plates of Examples 1 to 9, the dielectric breakdown time was not different from the dielectric plates of Comparative Examples 1 to 7 in terms of withstand voltage and dielectric constant. It has been found that the dielectric breakdown of the dielectric plate 2 can be allowed to proceed gently, as long as 10 seconds or longer. Moreover, it turned out that the fractal property is also improving. Therefore, it is confirmed that by measuring the current flowing through the dielectric plate 2, a sign of dielectric breakdown can be known from the value of the current, and the dielectric breakdown of the dielectric plate 2 can be predicted in advance. It was.

DESCRIPTION OF SYMBOLS 1 Electrostatic chuck apparatus 2 Dielectric board (base | substrate)
2a Top surface (one main surface)
2b Bottom surface (other main surface)
DESCRIPTION OF SYMBOLS 3 Electrode for electrostatic adsorption 4 Electrostatic chuck part 5 (1st) organic adhesive layer 6 Insulating layer 7 (2nd) organic adhesive layer 8 Base part (base)
DESCRIPTION OF SYMBOLS 11 Electrostatic chuck apparatus 12 (1st) organic adhesive layer 13 Insulating layer 21 Electrostatic chuck apparatus 22 Support plate W Wafer (plate-shaped sample)

Claims (5)

An electrostatic chuck device comprising: a substrate having a principal surface as a placement surface on which a plate-like sample is placed; and an electrostatic chucking electrode provided in the substrate or on the other principal surface side. And
The withstand voltage of the substrate is 5 kV / mm or more,
From the time when a measurement electrode is formed or placed on the placement surface of the substrate and a DC voltage with a current value of 1 nA / cm ² is applied between the measurement electrode and the electrostatic adsorption electrode, An electrostatic chuck device characterized in that a time until a current flowing between the measurement electrode and the electrostatic adsorption electrode reaches 100 nA / cm ² when a DC voltage is held is 1 second or longer. ^2. The electrostatic chuck device according to claim 1, wherein after the current reaches 100 nA / cm ^2, there are 10 or more conductive paths per 1 cm ² generated on the mounting surface of the base body.   The ratio of the current flowing between the measurement electrode and the electrostatic adsorption electrode to the minimum value of the maximum value of the in-plane current distribution in the measurement electrode is 1000 or less. 2. The electrostatic chuck device according to 2. The base is made of a dielectric material obtained by dispersing conductive particles in an insulating material,
The conductive particles have a particle size D10 having a cumulative volume percentage of 10% by volume in the volume particle size distribution of 0.2 μm or less, a particle diameter D90 of 90% by volume, and 2 μm or less, and a cumulative volume percentage of 90%. The ratio (D90 / D10) of the cumulative volume percentage of the volume% particle diameter D90 to the 10 volume% particle diameter D10 is 3.0 or more, and the cumulative volume percentage of the particle diameter D90 whose cumulative volume percentage is 90 volume% is 50. vol% ratio particle diameter D50 of (D90 / D50) is an electrostatic chuck device according to any one of claims 1 to 3, characterized in that not less than 1.5. 5. The electrostatic chuck device according to claim 4, wherein a content ratio of the conductive particles in the dielectric material is 4% by mass or more and 20% by mass or less.

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