JP5736935B2 - LIGHT EMITTING DEVICE, DISPLAY DEVICE, AND ELECTRONIC DEVICE - Google Patents

Description

  The present invention relates to a light emitting device, a display device, and an electronic device.

In the manufacture of organic electroluminescence elements (so-called organic EL elements), a red light emitting layer and a green light emitting layer included in an organic EL element that emits light of each color are formed by a coating method, and a blue light emitting layer is formed by a vacuum deposition method (vapor deposition method). A formed display device has been proposed (see, for example, Patent Document 1).
This is because an organic EL device manufactured using a coating method such as an inkjet method is an organic EL device that emits red and green light, and has a practical light emission life (luminance life) and light emission efficiency (current efficiency or external quantum). However, organic EL elements that emit blue light often do not reach a practical light emission lifetime or luminous efficiency, and organic EL elements that emit blue light that are produced using a vacuum deposition method are: It is a technique that focuses on the fact that its light emission lifetime is several times longer than that produced using a coating method and often reaches a practical level. In other words, even when a light emitting organic EL device manufactured using a liquid phase process such as an ink jet method does not reach a practical light emission lifetime or light emission efficiency, a vapor phase process such as a vacuum evaporation method is used. The organic EL element having the same luminescent color produced in this way may have a light emission life and light emission efficiency of a practical level.

  In such a display device, a red organic EL element (red pixel) and a green organic EL element (green pixel) are respectively formed on a red light emitting layer and a green light emitting layer of the blue light emitting layer using a vacuum deposition method. In other words, the blue light emitting layer is formed on the entire surface including the red light emitting layer and the green light emitting layer by a vacuum deposition method. Therefore, the manufacturing method of the display device having such a configuration does not need to selectively deposit (deposit) a blue light emitting layer only on the blue organic EL element (blue pixel) using a high-definition mask. It is most suitable for manufacture of a display device provided with.

However, in this case, in the red organic EL element and the green organic EL element, the blue light emitting layer is provided in contact with the red light emitting layer and the green light emitting layer, respectively. In many cases, electrons are not sufficiently injected into the green light emitting layer.
Therefore, in the red organic EL element (red pixel) and the green organic EL element (green pixel), the unintended blue light emitting layer emits light, and the color purity as red and green may be lowered respectively. .
That is, in a light emitting device having a plurality of layers (light emitting layer) having a function of emitting light between a cathode and an anode, a desired layer is selectively or predominantly made to emit light among the layers having the function of emitting light. There was a problem that it was not possible.

JP 2007-73532 A

  An object of the present invention is to provide a light emitting device including a plurality of layers having a function of emitting light between a cathode and an anode, and selectively or dominantly emit a desired layer among the plurality of layers having a function of emitting light. It is an object to provide a light-emitting device, a display device, and an electronic device that can be used.

Such an object is achieved by the present invention described below.
The light-emitting device of the present invention is a light-emitting device having a first light-emitting element and a second light-emitting element that emit light of different colors,
The first light emitting element includes:
A first anode;
A first cathode;
A first light-emitting layer provided between the first anode and the first cathode and having a function of emitting light in a first color;
A non-light emitting layer provided between the first cathode and the first light emitting layer and having a function of emitting light in a second color different from the first color;
A first carrier adjustment layer provided between the first light emitting layer and the non-light emitting layer and configured to include a hole blocking material and a hole transporting material;
The second light emitting element is:
A second anode;
A second cathode;
A second light-emitting layer provided between the second anode and the second cathode and having a function of emitting light in the second color;
A second carrier adjustment layer provided between the second light emitting layer and the second anode and configured to include a hole blocking material and a hole transporting material ;
The first carrier adjustment layer is provided between the first hole blocking layer configured to include the hole blocking material, the first hole blocking layer, and the non-light emitting layer, A first hole transport layer configured to include a hole transport material,
The second carrier adjustment layer is provided between the second hole blocking layer configured to include the hole blocking material, and the second hole blocking layer and the second light emitting layer. And a second hole transport layer configured to include the hole transport material .

According to the light emitting device configured as described above, in the first light emitting element, since the first carrier adjustment layer includes the hole blocking material, the first carrier adjustment layer is not aligned with the first light emission layer. The hole can be fastened. Therefore, in the first light-emitting element, the first light-emitting layer can selectively or predominantly emit light while preventing or suppressing light emission from the non-light-emitting layer.
In the second light emitting element, since the second carrier adjustment layer contains a hole transport material, the second carrier adjustment layer can transport holes to the second light emitting layer. Therefore, in the second light emitting element, the second light emitting layer can emit light efficiently.

  In particular, the non-light emitting layer and the second light emitting layer can be made of the same material, and the first carrier adjustment layer and the second carrier adjustment layer can be made of the same material. Therefore, the non-light emitting layer and the second light emitting layer are collectively formed by the same gas phase process, and the same gas phase process is performed without separately coating the first carrier adjusting layer and the second carrier adjusting layer for each light emitting element. Can be formed collectively. As a result, the characteristics of the first light-emitting element and the second light-emitting element can be improved, and the size of the light-emitting device can be easily increased.

Also, having a first hole blocking layer, wherein the first carrier adjusting layer is configured to include the hole blocking material, the second carrier adjusting layer contains the hole-blocking material structure it has been more have a second hole blocking layer, the first light-emitting element can be first hole blocking layer fastening holes effectively in the first light-emitting layer. In addition, the first carrier adjustment layer and the second carrier adjustment layer can be configured in the same layer configuration, and the first carrier adjustment layer and the second carrier adjustment layer are the same without being separately applied for each light emitting element. These can be formed in a batch by the vapor phase process.

In addition , the first carrier adjustment layer is provided between the first hole blocking layer and the non-light-emitting layer, and includes a first hole transport layer configured to include the hole transport material. a, the second carrier adjusting layer, provided between the second light-emitting layer and the second hole blocking layer, a second hole which said configured to include a hole transport material more have a transport layer, while the first carrier adjusting layer and the second carrier adjusting layer and the same layer structure, the second light-emitting element, increasing the amount of holes injected into the second light-emitting layer The luminous efficiency can be increased.

In the light emitting device of the present invention, the first hole blocking layer and the second hole blocking layer may be composed of a mixed material including the hole blocking material and the hole transport material, respectively. preferable.
Thereby, in the first light emitting element, the first hole blocking layer can effectively retain holes in the first light emitting layer. In the second light-emitting element, the amount of holes injected into the second light-emitting layer can be increased, and the light emission efficiency can be increased.

In the light emitting device of the present invention, the second light emitting element is
It is preferable to provide a hole injection layer provided between the second carrier adjustment layer and the second anode.
Thereby, in the 2nd light emitting element, the injection amount of the hole to a 2nd light emitting layer can be increased, and luminous efficiency can be improved.

In the light emitting device of the present invention, the first carrier adjustment layer has a first electron injection layer provided between the first hole blocking layer and the first light emitting layer,
The second carrier adjustment layer preferably includes a second electron injection layer provided between the second hole blocking layer and the hole injection layer.
As a result, while the first carrier adjustment layer and the second carrier adjustment layer have the same layer configuration, the amount of electrons injected into the first light emitting layer is increased in the first light emitting element, and the light emission efficiency is increased. be able to.

In the light emitting device of the present invention, it is preferable that the hole blocking material has a HOMO level deeper than a HOMO level of a constituent material of the first light emitting layer.
Thereby, the carrier adjustment layer can exhibit a hole blocking property in the first light emitting element.
In the light emitting device of the present invention, it is preferable that the hole blocking material has a wider band gap than the band gap of the constituent material of the first light emitting layer.
Thereby, the HOMO level of the hole blocking material can be made deeper than the HOMO level of the constituent material of the first light emitting layer.

In the light emitting device of the present invention, it is preferable that the first color is red or green and the second color is blue.
As a result, the non-light emitting layer and the second light emitting layer can be collectively formed of the blue light emitting material by the same vapor phase process. In addition, by forming the second light emitting layer by a vapor phase process, the characteristics of the second light emitting layer can be improved. Therefore, in general, the blue light emitting material is inferior to the red and green light emitting materials, but the characteristics of the second light emitting element can be brought to a practical level. In general, red and green light-emitting materials have better characteristics than blue light-emitting materials. Therefore, even if the first light-emitting layer is formed of a red or green light-emitting material by a liquid phase process, the characteristics of the first light-emitting layer Can be at a practical level.

In the light emitting device of the present invention, the non-light emitting layer is preferably provided integrally with the second light emitting layer.
Thereby, the non-light-emitting layer and the second light-emitting layer can be collectively formed by the same gas phase process.
In the light emitting device of the present invention, the first light emitting layer is formed by a liquid phase process, and the non-light emitting layer and the second light emitting layer are collectively formed by a gas phase process. It is preferable.
Thereby, the characteristics of the first light-emitting layer and the second light-emitting layer can be brought to practical levels, respectively.

In the light emitting device of the present invention, it is preferable that the first carrier adjustment layer is provided integrally with the second carrier adjustment layer.
Thereby, the first carrier adjustment layer and the second carrier adjustment layer can be collectively formed by a vapor phase process.
In the light emitting device of the present invention, it is preferable that the first carrier adjustment layer and the second carrier adjustment layer are collectively formed by a gas phase process.
Thereby, the characteristics of the first carrier adjustment layer and the second carrier adjustment layer can be made excellent.
The display device of the present invention includes the light emitting device of the present invention.
Thereby, a display device having excellent reliability can be provided.
An electronic apparatus according to the present invention includes the light emitting device according to the present invention.
Thereby, an electronic device having excellent reliability can be provided.

It is a typical sectional view showing a schematic structure of a light emitting device concerning a 1st embodiment of the present invention. It is typical sectional drawing which shows schematic structure of the light-emitting device which concerns on 2nd Embodiment of this invention. It is a longitudinal cross-sectional view which shows embodiment of the display apparatus to which the display apparatus of this invention is applied. 1 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which an electronic apparatus of the present invention is applied. It is a perspective view which shows the structure of the mobile telephone (PHS is also included) to which the electronic device of this invention is applied. It is a perspective view which shows the structure of the digital still camera to which the electronic device of this invention is applied.

DESCRIPTION OF EXEMPLARY EMBODIMENTS Hereinafter, preferred embodiments of a light-emitting device, a display device, and an electronic device of the invention will be described with reference to the accompanying drawings.
<First Embodiment>
First, a first embodiment of the present invention will be described.
(Light emitting device)
FIG. 1 is a schematic cross-sectional view showing a schematic configuration of the light emitting device according to the first embodiment of the present invention. In the following description, for convenience of explanation, the upper side in FIG. 1 will be described as “upper” and the lower side as “lower”.

A light-emitting device 1 shown in FIG. 1 includes a substrate 2 and a plurality of light-emitting elements (electroluminescence elements) 1R, 1G, and 1B provided on the substrate 2.
In the light emitting device 1, the light emitting elements 1R, 1G, and 1B emit light of different colors.
More specifically, in the light emitting device 1, the light emitting element 1R (first light emitting element) includes an anode 3R (first anode), a hole injection layer 4R, and a red light emitting layer 5R (first light emitting layer). The first electron injection layer 6R (first electron injection layer), the hole blocking layer 7R (first hole blocking layer), the hole transport layer 8R (first hole transport layer), and the blue light emitting layer 5BR. (Non-light emitting layer), electron transport layer 10R, second electron injection layer 11R, and cathode 12R (first cathode) are laminated in this order.

The light emitting element 1G (first light emitting element) includes an anode 3G (first anode), a hole injection layer 4G, a green light emitting layer 5G (first light emitting layer), and a first electron injection layer 6G (first light emitting element). Electron injection layer), hole blocking layer 7G (first hole blocking layer), hole transporting layer 8G (first hole transporting layer), blue light emitting layer 5BG (non-light emitting layer), and electron transporting layer 10G. The second electron injection layer 11G and the cathode 12G (first cathode) are laminated in this order.
The light emitting element 1B (second light emitting element) includes an anode 3B (second anode), a hole injection layer 4B, a first electron injection layer 6B (second electron injection layer), and a hole blocking layer 7B ( (Second hole blocking layer), hole transport layer 8B (second hole transport layer), blue light emitting layer 5BB (second light emitting layer), electron transport layer 10B, second electron injection layer 11B and cathode 12B. Are stacked in this order.

Here, the first electron injection layers 6 </ b> R, 6 </ b> G, and 6 </ b> B are integrally provided to constitute the first electron injection layer 6. Further, the hole blocking layers 7R, 7G, and 7B are integrally provided to constitute the hole blocking layer 7. In addition, the hole transport layers 8R, 8G, and 8B are integrally provided to constitute the hole transport layer 8. Further, the blue light emitting layers 5BR, 5BG, and 5BB are integrally provided to constitute the blue light emitting layer 5B. Further, the electron transport layers 10R, 10G, and 10B are integrally provided to constitute the electron transport layer 10. Further, the second electron injection layers 11R, 11G, and 11B are integrally provided to constitute the second electron injection layer 11. Further, the cathodes 12R, 12G, and 12B are integrally provided to constitute the cathode 12.
That is, the first electron injection layer 6, the hole blocking layer 7, the hole transport layer 8, the blue light emitting layer 5B, the electron transport layer 10, the second electron injection layer 11, and the cathode 12 are respectively light emitting elements 1R, 1G, It is commonly used for 1B.

On the other hand, the anode 3R, the hole injection layer 4R, and the red light emitting layer 5R are individually used for the light emitting element 1R, and the anode 3G, the hole injection layer 4G, and the green light emitting layer 5G are individually provided for the light emitting element 1G. In addition, the anode 3B and the hole injection layer 4B are individually used for the light emitting element 1B.
In addition, the stacked body including the first electron injection layer 6, the hole blocking layer 7, and the hole transport layer 8 constitutes a carrier adjustment layer 9 that adjusts the flow of carriers. In the light emitting element 1R, the stacked body including the first electron injection layer 6R, the hole blocking layer 7R, and the hole transporting layer 8R includes a first carrier that includes a hole blocking material and a hole transporting material. Configure the adjustment layer. In the light emitting device 1G, the stacked body including the first electron injection layer 6G, the hole blocking layer 7G, and the hole transporting layer 8G includes the first carrier configured to include the hole blocking material and the hole transporting material. Configure the adjustment layer. In the light emitting device 1B, the stacked body including the first electron injection layer 6B, the hole blocking layer 7B, and the hole transporting layer 8B includes a second carrier that includes the hole blocking material and the hole transporting material. Configure the adjustment layer.

In such a light emitting device 1, when a driving voltage is applied between the anode 3R and the cathode 12, electrons are supplied (injected) from the cathode 12 side to the red light emitting layer 5R. Holes are supplied (injected) from the anode 3R side. Then, in the red light emitting layer 5R, holes and electrons recombine, and exciton (exciton) is generated by this recombination, and energy is emitted as light (fluorescence or phosphorescence) when the exciton returns to the ground state. To do. At that time, as will be described in detail later, due to the action of the carrier adjustment layer 9, in the light emitting element 1R, recombination of holes and electrons in the blue light emitting layer 5B is suppressed or prevented. Therefore, the light emitting element 1R emits red light.
Similarly, when a driving voltage is applied between the anode 3G and the cathode 12, holes and electrons are recombined in the green light emitting layer 5G, and the light emitting element 1G emits green light.

Further, when a driving voltage is applied between the anode 3B and the cathode 12, holes and electrons are recombined in the blue light emitting layer 5B, and the light emitting element 1B emits blue light. At that time, as will be described in detail later, due to the action of the carrier adjustment layer 9, in the light emitting element 1B, recombination of holes and electrons in the blue light emitting layer 5B can be suitably performed.
In the present embodiment, each of the light emitting elements 1R, 1G, and 1B has a configuration for extracting light from the substrate 2 side (bottom emission type). Each of the light emitting elements 1R, 1G, and 1B may be configured to extract light from the side opposite to the substrate 2 (top emission type).

Hereinafter, each part which comprises the light-emitting device 1 is demonstrated sequentially.
[Substrate 2]
The substrate 2 supports the anodes 3R, 3G, and 3B, respectively. Since each of the light emitting elements 1R, 1G, and 1B of the present embodiment is a bottom emission type as described above, the substrate 2 is substantially transparent (colorless transparent, colored transparent, or translucent).

Examples of the constituent material of the substrate 2 include resin materials such as polyethylene terephthalate, polyethylene naphthalate, polypropylene, cycloolefin polymer, polyamide, polyethersulfone, polymethyl methacrylate, polycarbonate, and polyarylate, quartz glass, and soda glass. Such glass materials can be used, and one or more of these can be used in combination.
Although the average thickness of such a board | substrate 2 is not specifically limited, It is preferable that it is about 0.1-30 mm, and it is more preferable that it is about 0.1-10 mm.

In addition, when each of the light emitting elements 1R, 1G, and 1B is a top emission type, the substrate 2 can be either a transparent substrate or an opaque substrate.
Examples of the opaque substrate include a substrate made of a ceramic material such as alumina, an oxide film (insulating film) formed on the surface of a metal substrate such as stainless steel, and a substrate made of a resin material. It is done.

[Anode 3R, 3G, 3B]
The anode 3R is an electrode that injects holes into the hole injection layer 4R. Similarly, the anode 3G is an electrode that injects holes into the hole injection layer 4G. The anode 3B is an electrode that injects holes into the hole injection layer 4B.
The constituent materials of the anodes 3R, 3G, and 3B are not particularly limited, but materials having a large work function and excellent conductivity are preferably used.

As the constituent materials of the anodes 3R, 3G, and 3B, for example, ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), In ₂ O ₃ , SnO ₂ , fluorine-added SnO ₂ , Sb-added SnO ₂ , ZnO, Examples thereof include metal oxides such as Al-added ZnO and Ga-added ZnO, Au, Pt, Ag, Cu, and alloys containing these, and one or more of these can be used in combination.
The constituent materials of the anodes 3R, 3G, and 3B may be the same as or different from each other.

Further, since the light emitting elements 1R, 1G, and 1B of the present embodiment are bottom emission types as described above, the anodes 3R, 3G, and 3B are substantially transparent (colorless transparent, colored transparent, or translucent), respectively. ing. When the light emitting elements 1R, 1G, and 1B are each of the top emission type, the anodes 3R, 3G, and 3B may be opaque.
The average thicknesses of the anodes 3R, 3G, and 3B are not particularly limited, but are preferably about 10 nm to 200 nm, and more preferably about 30 nm to 150 nm.
The average thicknesses of the anodes 3R, 3G, and 3B may be the same as or different from each other.

[Hole injection layer 4R, 4G]
The hole injection layer 4R has a function of facilitating hole injection from the anode 3R. Similarly, the hole injection layer 4G has a function of facilitating hole injection from the anode 3G.
The hole injection layer 4R is in contact with a red light emitting layer 5R described later. Similarly, the hole injection layer 4G is in contact with a green light emitting layer 5G described later.

The constituent material (hole injection material) of the hole injection layers 4R and 4G is not particularly limited, but the conductive material is high so that the hole injection layers 4R and 4G can be formed using a liquid phase process. An ion conductive hole injection material obtained by adding an electron accepting dopant to a molecular material (or conductive oligomer material) is preferably used.
Examples of such ion conductive hole injection materials include polythiophonic hole injection materials such as poly (3,4-ethylenedioxythiophene) -poly (styrenesulfonic acid) (PEDOT / PSS), polyaniline, and the like. -Polyaniline-based hole injection material such as poly (styrenesulfonic acid) (PANI / PSS), oligoaniline derivatives represented by the following general formula (1), and electron-accepting dopants represented by the following general formula (4) And an oligoaniline-based hole injection material formed by forming a salt.

［式中、Ｒ^１、Ｒ^２およびＲ^３は、それぞれ独立して未置換もしくは置換の一価炭化水素基またはオルガノオキシ基を示し、ＡおよびＢは、それぞれ独立して下記一般式（２）または下記一般式（３）で表される二価の基であり、Ｒ^４〜Ｒ^１１、はそれぞれ独立して水素原子、水酸基、未置換もしくは置換の一価炭化水素基またはオルガノオキシ基、アシル基、またはスルホン酸基であり、ｍおよびｎは、それぞれ独立して１以上の正数で、ｍ＋ｎ≦２０を満足する。］

[Wherein R ¹ , R ² and R ³ each independently represents an unsubstituted or substituted monovalent hydrocarbon group or an organooxy group, and A and B each independently represent the following general formula (2) Or a divalent group represented by the following general formula (3), wherein R ^{4 to} R ¹¹ are each independently a hydrogen atom, a hydroxyl group, an unsubstituted or substituted monovalent hydrocarbon group, an organooxy group, or an acyl. Each of m and n is independently a positive number of 1 or more and satisfies m + n ≦ 20. ]

［式中、Ｄは、ベンゼン環、ナフタレン環、アトラセン環、フェナントレン環または複素環を表し、Ｒ^１２、Ｒ^１３は、それぞれ独立してカルボキシル基またはヒドロキシル基を表す。］

[Wherein, D represents a benzene ring, a naphthalene ring, an atracene ring, a phenanthrene ring or a heterocyclic ring, and R ¹² and R ¹³ each independently represent a carboxyl group or a hydroxyl group. ]

The constituent materials of the hole injection layers 4R and 4G may be the same as or different from each other.
The average thicknesses of such hole injection layers 4R and 4G are not particularly limited, but are preferably about 5 nm to 150 nm and more preferably about 10 nm to 100 nm.

The average thicknesses of the hole injection layers 4R and 4G may be the same as or different from each other.
The hole injection layers 4R and 4G may be omitted depending on the configuration of the light emitting elements 1R and 1G, for example, the constituent materials and thicknesses of the anodes 3R and 3G, the red light emitting layer 5R, the green light emitting layer 5G, and the like. You can also.

  Further, instead of the hole injection layer 4R, a hole transport layer may be provided between the hole injection layer 4R and a red light emitting layer 5R described later. Similarly, instead of the hole injection layer 4G, a hole transport layer may be provided between the hole injection layer 4G and a green light emitting layer 5G described later. The constituent material of the hole transport layer is not particularly limited. For example, a triphenylamine-based polymer represented by the following general formula (5) can be used to form the hole injection layer using a liquid phase process. An amine compound such as is preferably used.

  The average thickness of the hole transport layer is not particularly limited, but is preferably about 5 nm to 100 nm and more preferably about 10 nm to 50 nm.

[Hole Injection Layer 4B]
The hole injection layer 4B has a function of facilitating hole injection from the anode 3B. The hole injection layer 4B is in contact with a first electron injection layer 6 described later.
The hole injection layer 4B is provided between the carrier adjustment layer 9 and the anode 3B of the light emitting element 1B. Thereby, in the light emitting element 1B, the amount of holes injected into the blue light emitting layer 5B can be increased, and the light emission efficiency can be increased.

The constituent material (hole injection material) of the hole injection layer 4B is not particularly limited, but a conductive polymer material (or conductive material) so that the hole injection layer 4B can be formed using a liquid phase process. An ion conductive hole injection material obtained by adding an electron accepting dopant to the oligomer material) is preferably used.
As such an ion conductive hole injection material, the same materials as those mentioned above as the constituent material (hole injection material) of the hole injection layer 4R can be used.

The constituent material of the hole injection layer 4B may be the same as or different from the constituent material of the hole injection layers 4R and 4G described above.
The average thickness of the hole injection layer 4B is not particularly limited, but is preferably about 5 nm to 150 nm and more preferably about 10 nm to 100 nm.
The average thickness of the hole injection layer 4B may be the same as or different from the average thickness of the hole injection layers 4R and 4G described above.

[Red light emitting layer 5R]
The red light emitting layer 5R has a function of emitting red light (first color).
The red light emitting layer 5R includes a red light emitting material that emits red light. The red light emitting layer 5R is provided on the hole injection layer 4R described above.
The constituent material (red light emitting material) of the red light emitting layer 5R is not particularly limited, but it is preferable that the red light emitting layer 5R can be formed into a solution or a dispersion liquid so that the red light emitting layer 5R can be formed by using a liquid phase process. Therefore, as the constituent material of the red light emitting layer 5R, a polymer red light emitting material and a low molecular red light emitting material that can be dissolved in a solvent or dispersed in a dispersion medium are suitably used. For example, the following general formula (6) and A polymeric red light-emitting material represented by the following general formula (7) is exemplified.

Such a red light-emitting material can bring the light emission lifetime characteristics of the light-emitting element 1R to a practical level even when the red light-emitting layer 5R is formed using a liquid phase process.
The average thickness of the red light emitting layer 5R is not particularly limited, but is preferably about 10 nm or more and 150 nm or less, and more preferably about 20 nm or more and 100 nm or less.

[Green light emitting layer 5G]
The green light emitting layer 5G has a function of emitting green light (first color).
The green light emitting layer 5G includes a green light emitting material that emits green light. The green light emitting layer 5G is provided on the hole injection layer 4G described above.
The constituent material of the green light emitting layer 5G is not particularly limited, but it is desirable that the green light emitting layer 5G can be formed into a solution or a dispersion liquid so that the green light emitting layer 5G can be formed by using a liquid phase process. Therefore, as a constituent material of the green light emitting layer 5G, a high molecular weight green light emitting material and a low molecular weight green light emitting material that can be dissolved in a solvent or dispersed in a dispersion medium are suitably used. For example, the following general formula (19) and A polymeric green light-emitting material represented by the following general formula (20) is exemplified.

Such a green light-emitting material can bring the light emission lifetime characteristics of the light-emitting element 1G to a practical level even when the green light-emitting layer 5G is formed using a liquid phase process.
The average thickness of the green light emitting layer 5G is not particularly limited, but is preferably about 10 nm to 150 nm, and more preferably about 20 nm to 100 nm.

[First Electron Injection Layer 6]
The first electron injection layer 6 is a layer constituting a part of the carrier adjustment layer 9. In the light emitting element 1R, the first electron injection layer 6 is in contact with the red light emitting layer 5R. In the light emitting element 1G, the first electron injection layer 6 is in contact with the green light emitting layer 5G. In the light emitting element 1B, the first electron injection layer 6 is in contact with the hole injection layer 4B.

  The first electron injection layer 6 is formed between the hole blocking layer 7 and the red light emitting layer 5R, between the hole blocking layer 7 and the green light emitting layer 5G, and between the hole blocking layer 7 and the hole injection layer 4B. Between. As a result, while the carrier adjustment layers 9 of the light emitting elements 1R, 1G, and 1B have the same layer configuration, the amount of electrons injected into the red light emitting layer 5R and the green light emitting layer 5G in the light emitting elements 1R and 1G is increased, thereby emitting light. Efficiency can be increased.

  Examples of the constituent material of the first electron injection layer 6 include alkali metals, alkaline earth metals, rare earth metals, alkali metal salts (oxides, fluorides, chlorides, etc.), alkaline earth metal salts (oxides, Fluorides, chlorides, etc.), rare earth metal salts (oxides, fluorides, chlorides, etc.), electron complexes such as metal complexes, etc., and one or more of these are used in combination be able to.

  By configuring the first electron injection layer 6 using such an electron injection material as a main material, in the light emitting element 1R, the efficiency of electron injection from the blue light emitting layer 5B to the red light emitting layer 5R via the carrier adjustment layer 9 is increased. Can be improved. Further, in the light emitting element 1G, the efficiency of injecting electrons from the blue light emitting layer 5B to the green light emitting layer 5G via the carrier adjustment layer 9 can be improved.

Examples of the alkali metal include Li, Na, K, Rb, and Cs. Examples of the alkaline earth metal include Mg, Ca, Sr, and Ba. Furthermore, examples of the rare earth metal include Nd, Sm, Y, Tb, and Eu.
Examples of the alkali metal salt include LiF, Li ₂ CO ₃ , LiCl, NaF, Na ₂ CO ₃ , NaCl, CsF, Cs ₂ CO ₃ , and CsCl. Examples of the alkaline earth metal salt include CaF ₂ , CaCO ₃ , SrF ₂ , SrCO ₃ , BaF ₂ , and BaCO ₃ . Furthermore, examples of the rare earth metal salt include SmF ₃ and ErF ₃ .

Examples of the metal complex include organometallic complexes having 8-quinolinol or a derivative thereof such as 8-quinolinolatolithium (Liq) or tris (8-quinolinolato) aluminum (Alq ₃ ) as a ligand.
Moreover, the formation process of the first electron injection layer 6 may use a vapor phase process such as a vacuum evaporation method (evaporation method) or a sputtering method, or a liquid phase process such as an ink jet method or a slit coat method. May be.

Further, the first electron injection layer 6 may be formed in a form in which two or more types of electron injection layers are laminated. Thereby, the carrier injection operation in the light emitting elements 1R and 1G of the carrier adjustment layer 9 is accurately performed.
The average thickness of the first electron injection layer 6 is not particularly limited, but is preferably about 0.01 nm to 10 nm, more preferably about 0.1 nm to 5 nm. By setting the average thickness of the first electron injection layer 6 within this range, the carrier injection operation in the light emitting element 1R of the carrier adjustment layer 9 is accurately performed.

[Hole blocking layer 7]
The hole blocking layer 7 has a function of blocking holes. Thereby, in the light emitting elements 1R and 1G, holes can be retained in the red light emitting layer 5R and the green light emitting layer 5G, and the red light emitting layer 5R and the green light emitting layer 5G can emit light selectively or dominantly.
Such a hole blocking layer 7 includes a hole blocking material. Thereby, in the light emitting elements 1R and 1G, the hole blocking layer 7 can effectively retain holes in the red light emitting layer 5R and the green light emitting layer 5G. Further, the carrier adjustment layer 9 of the light emitting elements 1R, 1G, and 1B can be configured in the same layer configuration, and the carrier adjustment layer 9 can be formed by the same vapor phase process without being separately applied to each of the light emitting elements 1R, 1G, and 1B. Batch formation is possible.

The hole blocking material contained in the hole blocking layer 7 has a HOMO level deeper than the HOMO levels of the constituent materials of the red light emitting layer 5R and the green light emitting layer 5G. Thereby, the carrier adjustment layer 9 can exhibit a hole blocking property in the light emitting elements 1R and 1G.
Moreover, it is preferable that this hole block material has a wider band gap than the band gap of the constituent material of the red light emitting layer 5R and the green light emitting layer 5G. Thereby, the HOMO level of the hole blocking material can be made deeper than the HOMO level of the constituent materials of the red light emitting layer 5R and the green light emitting layer 5G.

The constituent material (hole blocking material) of the hole blocking layer 7 is not particularly limited. For example, bis (2methyl-8-quinolinoleate) -4- (phenylphenol) represented by the following formula (21): (Rate) Aluminum complexes such as aluminum (BAlq ₃ ), phenanthroline derivatives such as 2,9-dimethyl-4,7-diphenyl-1.10-phenanthroline (BCP) represented by the following formula (22), and the following formula (23) Or a triazole derivative such as 3- (4-biphenyl) -4-phenyl-5-tertiarybutylphenyl-1,2,4-triazole (TAZ) represented by the formula:

The constituent material of the hole blocking layer 7 preferably has a hole transporting property. Thereby, in the light emitting element 1 </ b> B, holes can be transported to the blue light emitting layer 5 </ b> B through the hole blocking layer 7. As a result, the light emitting element 1B can emit blue light.
The hole blocking layer 7 may contain a material excellent in hole transportability in addition to the hole blocking material described above. That is, the hole blocking layer 7 may be composed of a mixed material including a hole blocking material and a hole transport material. In this case, in the light emitting elements 1R and 1G, the hole blocking layer 7 can effectively retain holes in the red light emitting layer 5R and the green light emitting layer 5G. Further, in the light emitting element 1B, the amount of holes injected into the blue light emitting layer can be increased, and the light emission efficiency can be increased. As the hole transport material used for such a mixed material, the same material as the constituent material (hole transport material) of the hole transport layer 8 described later can be used. The hole block layer 7 containing such a hole transport material has a hole transport property.

  The average thickness of the hole blocking layer 7 is not particularly limited, but is preferably 0.1 nm or more and 20 nm or less, and more preferably 1 nm or more and 10 nm or less. By setting the average thickness of the hole blocking layer 7 within such a range, the hole blocking property in the light emitting elements 1R and 1G and the hole transporting property in the light emitting element 1B can be set in a balanced manner. .

[Hole transport layer 8]
The hole transport layer 8 is one of the layers constituting the carrier adjustment layer 9 and is a layer in contact with the blue light emitting layer 5B.
This hole transport layer is provided between the hole block layer 7 and the blue light emitting layer 5B, and includes a hole transport material. Thereby, while making the carrier adjustment layer 9 of the light emitting elements 1R, 1G, and 1B have the same layer configuration, in the light emitting element 1B, the amount of holes injected into the blue light emitting layer 5B can be increased, and the light emission efficiency can be increased. .

  The hole transport layer 8 has a hole transport property in the light emitting element 1B. Such a hole transport layer 8 has an electron blocking property in the light emitting device 1B. Therefore, in the light emitting element 1B, electrons from the blue light emitting layer 5B can be blocked, and the electrons can be retained in the blue light emitting layer 5B. As a result, in the light emitting element 1B, the blue light emitting layer 5B can emit light efficiently.

  Further, in the hole transport layer 8, in the light emitting elements 1 </ b> R and 1 </ b> G, the constituent material (electron transport material) of the first electron injection layer 6 is diffused, whereby the above-described electron blocking property is suppressed or eliminated, and electron transport is performed. Demonstrate sex. Therefore, in the light emitting elements 1R and 1G, electrons from the blue light emitting layer 5B can pass through the hole transport layer 8 without blocking, and electrons can be efficiently injected into the red light emitting layer 5R and the green light emitting layer 5G. . As a result, in the light emitting elements 1R and 1G, the red light emitting layer 5R and the green light emitting layer 5G can emit light efficiently.

  The constituent material (hole transport material) of the hole transport layer 8 is not particularly limited. For example, the hole transport layer 8 can be formed using a vapor phase process such as a vacuum deposition method, for example, N, N′-diphenyl-N, N′-di (m-tolyl) -benzidine (TPD) represented by the formula (8), bis [N- (1-naphthyl) -N represented by the following formula (9) Examples include amine compounds such as benzidine derivatives such as -phenyl] benzidine (α-NPD), and one or more of them can be used in combination.

Among these, as the constituent material of the hole transport layer 8, it is preferable to use an amine compound from the viewpoint that the hole transport layer 8 can suitably exhibit the electron blocking property in the light emitting element 1B as described above. .
The average thickness of the hole transport layer 8 is not particularly limited, but is preferably about 1 nm to 50 nm and more preferably about 5 nm to 30 nm. By setting the average thickness of the hole transport layer 8 within such a range, the electron block property in the light emitting element 1B of the hole transport layer 8 as described above and the electron transport property in the light emitting elements 1R and 1G are balanced. It can be excellent.

[Blue light emitting layer 5B]
The blue light emitting layer 5B has a function of emitting blue light (second color different from the first color).
The blue light emitting layer 5B includes a blue light emitting material that emits blue light.
The constituent material of the blue light emitting layer 5B is not particularly limited, but a material capable of forming the blue light emitting layer 5B by using a vapor phase process is preferably used. For example, a styryl derivative represented by the following formula (10) is used. A blue light emitting material is mentioned.

  In addition, as a constituent material of the blue light emitting layer 5B, a material in which a host material is doped with a blue light emitting material as a guest material is used. The host material has a function of recombining holes and electrons to generate excitons and transferring the energy of the excitons to the blue light-emitting material (Felster transfer or Dexter transfer). Due to the function of the host material, the blue light-emitting material that is the guest material is efficiently excited and emits light.

  Here, examples of the host material include anthracene derivatives represented by the following formula (11), the following formula (12), and the following formula (13), and one or more of these are used in combination. You can also. Moreover, as a blue luminescent material as a guest material, the styryl derivative represented by following formula (14), following formula (15), and following formula (16) is mentioned, for example, Of these, 1 type or 2 types or more Can also be used in combination.

Such a blue light emitting material can make the light emission lifetime characteristics of the light emitting element 1B to a practical level by forming the blue light emitting layer 5B using a vapor phase process.
Further, when such a guest material and host material are used, the content (dope amount) of the guest material in the blue light emitting layer 5B is about 0.1% to 20% by weight with respect to the host material. Is preferable, and it is more preferable that it is about 0.5% or more and 10% or less. Luminous efficiency can be optimized by setting the content of the guest material in such a range.
The average thickness of the blue light emitting layer 5B is not particularly limited, but is preferably about 5 nm to 100 nm and more preferably about 10 nm to 50 nm.

[Electron transport layer 10]
The electron transport layer 10 has a function of transporting electrons injected from the cathode 12 to the electron transport layer 10 through the second electron injection layer 11 to the blue light emitting layer 5B. In addition, the electron transport layer 10 may have a function of blocking holes that try to pass from the blue light emitting layer 5 </ b> B to the electron transport layer 10.

The constituent material (electron transport material) of the electron transport layer 10 is not particularly limited. For example, tris (8-quinolinolato) aluminum (Alq ₃ ) is used so that the electron transport layer 10 can be formed using a vapor phase process. And quinoline derivatives such as organometallic complexes having 8-quinolinol or its derivatives such as 8-quinolinolatolithium (Liq) as a ligand, 2- (4-tert-butylphenyl) -5- (4-biphenyl) ) -1,3,4-oxadiazole (tBu-PBD), oxadiazole derivatives such as 2,5-bis (1-naphthyl) -1,3,4-oxadiazole (BND), 3- Triazole derivatives such as (4-biphenyl) -4-phenyl-5- (4-tert-butylphenyl) -1,2,4-triazole (TAZ), Silole derivatives such as the compounds represented, pyridine derivatives, pyrimidine derivatives, quinoxaline derivatives, nitrogen-containing heterocyclic derivatives such as compounds represented by the following formula (18), and the like are preferably used. A combination of more than one species can be used.

The average thickness of the electron transport layer 10 is not particularly limited, but is preferably about 1 nm to 100 nm and more preferably about 5 nm to 50 nm. Thereby, the electrons injected from the second electron injection layer 11 can be suitably transported to the blue light emitting layer 5B.
The electron transport layer 10 may be omitted depending on the configuration of each layer constituting the light emitting device 1.

[Second Electron Injection Layer 11]
The second electron injection layer 11 has a function of improving the efficiency of electron injection from the cathode 12 to the electron transport layer 10.
The constituent material (electron injection material) of the second electron injection layer 11 is not particularly limited, and for example, the same materials as those described above as the constituent material of the first electron injection layer 6 can be used.

The constituent materials (electron injecting materials) of the second electron injecting layer 11 and the first electron injecting layer 6 can obtain optimum injection efficiency depending on the combination of constituent materials of the two layers that hold them. Since the material is selected, the constituent material of the second electron injection layer 11 and the constituent material of the first electron injection layer 6 may be the same or different.
The average thickness of the second electron injection layer 11 is not particularly limited, but is preferably about 0.01 nm or more and 100 nm or less, and more preferably about 0.1 nm or more and 10 nm or less.
The second electron injection layer 11 can be omitted depending on the combination of the types of constituent materials of the electron transport layer 10 and the cathode 12 and the film thickness thereof.

[Cathode 12]
The cathode 12 is an electrode that injects electrons into the electron transport layer 10 via the second electron injection layer 11.
As a constituent material of the cathode 12, it is preferable to use a material having a small work function. As a constituent material of the cathode 12, for example, Li, Mg, Ca, Sr, La, Ce, Er, Eu, Sc can be formed by using a vapor phase process in the cathode 12 forming process described later. , Y, Yb, Ag, Cu, Al, Cs, Rb, Au, or an alloy containing these is used, and one or more of these are used in combination (for example, a multi-layer laminate). be able to.

In particular, in the present embodiment, since the light emitting elements 1R, 1G, and 1B are bottom emission types as described above, the cathode 12 is not required to have light transmittance, and examples of the constituent material of the cathode 12 include Al, A metal or alloy such as Ag, AlAg, or AlNd is preferably used. By using such a metal or alloy as a constituent material of the cathode 12, the electron injection efficiency and stability of the cathode 12 can be improved.
The average thickness of the cathode 12 is not particularly limited, but is preferably about 50 nm to 1000 nm, and more preferably about 100 nm to 500 nm.

  When the light emitting elements 1R, 1G, and 1B are of the top emission type, it is preferable to use a metal or an alloy such as MgAg, MgAl, MgAu, and AlAg as the constituent material of the cathode 12. By using such a metal or alloy as a constituent material of the cathode 12, it is possible to improve the electron injection efficiency and stability of the cathode 12 while maintaining the light transmittance of the cathode 12.

In such a case, the average thickness of the cathode 12 is not particularly limited, but is preferably about 1 nm to 50 nm and more preferably about 5 nm to 20 nm.
According to the light emitting device 1 configured as described above, in the light emitting element 1R, since the carrier adjustment layer 9 includes a hole blocking material, the carrier adjustment layer 9 retains holes in the red light emission layer 5R. Can do. Therefore, in the light emitting element 1R, the red light emitting layer 5R is selectively or dominantly lit while preventing or suppressing light emission of the blue light emitting layer 5B (more specifically, the blue light emitting layer 5BR which is a non-light emitting layer). be able to.

  Similarly, in the light emitting element 1G, since the carrier adjustment layer 9 contains a hole blocking material, the carrier adjustment layer 9 can retain holes in the green light emitting layer 5G. Therefore, in the light emitting element 1G, the green light emitting layer 5G is made to emit light selectively or predominantly while preventing or suppressing light emission of the blue light emitting layer 5B (more specifically, the blue light emitting layer 5BG which is a non-light emitting layer). be able to.

In the light emitting element 1B, since the carrier adjustment layer 9 contains a hole transport material, the carrier adjustment layer 9 can transport holes to the blue light emitting layer 5B (more specifically, the blue light emitting layer 5BB). it can. Therefore, in the light emitting element 1B, the blue light emitting layer 5B can emit light efficiently.
In particular, since the blue light emitting layer 5B and the carrier adjustment layer 9 can be formed by a vapor phase process without separately coating each of the light emitting elements 1R, 1G, and 1B, the characteristics of the light emitting elements 1R, 1G, and 1B are improved. While being excellent, the light emitting device 1 can be easily increased in size.

Further, since the blue light emitting layer 5B which is a non-light emitting layer of the light emitting elements 1R and 1G and the blue light emitting layer 5B of the light emitting element 1B are provided integrally, the blue light emitting layer 5B of the light emitting elements 1R, 1G and 1B is provided. Batch formation can be performed by the same vapor phase process. Further, by forming the blue light emitting layer 5B by a vapor phase process, the characteristics of the blue light emitting layer 5B can be enhanced. Therefore, in general, the blue light-emitting material is inferior in characteristics to the red and green light-emitting materials, but the characteristics of the light-emitting element 1B can be brought to a practical level. In general, red and green light emitting materials have better characteristics than blue light emitting materials. Therefore, even if the red light emitting layer 5R and the green light emitting layer 5G are formed by a liquid phase process, respectively, the red light emitting layer 5R and the green light emitting layer 5G are formed. These characteristics can be brought to a practical level.
Moreover, since the carrier adjustment layer 9 of the light emitting elements 1R, 1G, and 1B is provided integrally, the carrier adjustment layer 9 can be collectively formed by a vapor phase process. Thereby, the characteristic of the carrier adjustment layer 9 can be made excellent.

(Method for manufacturing light-emitting device 1)
The light emitting device 1 configured as described above can be manufactured, for example, as follows.
[1] First, a substrate 2 is prepared, and anodes (individual electrodes) 3R, 3G, and 3B are formed on the substrate 2.

The anodes 3R, 3G, and 3B are formed by, for example, forming a thin film composed mainly of the constituent materials of the anodes 3R, 3G, and 3B on the substrate 2 by vapor deposition or the like, and then etching the thin film using etching or the like. Can be obtained by patterning.
In addition, after the formation of the anodes 3R, 3G, and 3B, oxygen plasma treatment may be performed on the upper surfaces of the anodes 3R, 3G, and 3B as necessary. Accordingly, the upper surfaces of the anodes 3R, 3G, and 3B are made lyophilic, organic substances adhering to the upper surfaces of the anodes 3R, 3G, and 3B are removed (washed), and the upper surfaces of the anodes 3R, 3G, and 3B The work function can be adjusted.

Here, as conditions for the oxygen plasma treatment, for example, the plasma power is about 100 to 800 W, the oxygen gas flow rate is about 50 to 100 mL / min, and the conveyance speed of the member to be treated (anode 3R, 3G, 3B) is 0.5 to 10 mm / min. It is preferable that the temperature of the substrate 2 is about 70 to 90 ° C. for about sec.
Further, before this oxygen plasma treatment, partition walls (banks) can be formed so as to partition the anodes 3R, 3G, and 3B.

The partition walls can be formed by patterning using a photolithography method or the like so that the anodes 3R, 3G, and 3B are exposed.
Here, the constituent material of the partition is selected in consideration of heat resistance, liquid repellency, ink solvent resistance, adhesion to the substrate 2 and the like. Specifically, examples of the constituent material for the partition include organic materials such as acrylic resins, polyimide resins, and epoxy resins, and inorganic materials such as SiO ₂ .

When such partition walls are formed, the surfaces of the anodes 3R, 3G, and 3B and the surfaces of the partition walls (including wall surfaces) are activated and made lyophilic by oxygen plasma treatment. Thereafter, it is preferable to perform plasma treatment using a fluorine-based gas such as CF ₄ as a treatment gas. As a result, the fluorine gas reacts only on the surface of the partition wall made of a photosensitive resin, which is an organic material, to make the liquid repellent. Thereby, the function of the partition walls as the partition walls is more effectively exhibited.

[2] Next, the hole injection layer 4R is formed on the anode 3R, the hole injection layer 4G is formed on the anode 3G, and the hole injection layer 4B is formed on the anode 3B.
The hole injection layers 4R, 4G, and 4B are formed by, for example, supplying a hole injection layer forming material obtained by dissolving a hole injection material in a solvent or dispersing in a dispersion medium onto the anodes 3R, 3G, and 3B. , Dried (desolvent or dedispersed medium) (ie, liquid phase process).

As a method for supplying the hole injection layer forming material, for example, various coating methods such as a spin coating method, a roll coating method, and an ink jet printing method can be used. By using this coating method, the hole injection layers 4R, 4G, and 4B can be formed relatively easily.
Examples of the solvent or dispersion medium used for the preparation of the hole injection layer forming material include various inorganic solvents, various organic solvents, and mixed solvents containing these.
The drying can be performed, for example, by standing in an atmospheric pressure or a reduced pressure atmosphere, heat treatment, or blowing an inert gas.

[3] Next, the red light emitting layer 5R is formed on the hole injection layer 4R, and the green light emitting layer 5G is formed on the hole injection layer 4G.
The red light emitting layer 5R and the green light emitting layer 5G can be formed by a liquid phase process in the same manner as the hole injection layers 4R, 4G, and 4B.
[4] Next, the first electron injection layer 6 is formed so as to overlap the red light emitting layer 5R, the green light emitting layer 5G, and the hole injection layer 4B.
Examples of the method for forming the first electron injection layer 6 include vapor phase processes such as sputtering, vacuum deposition, and CVD, ink jet, spin coating (pyrosol), casting, microgravure coating, Liquid phase processes such as gravure coating, bar coating, roll coating, wire bar coating, dip coating, spray coating, screen printing, flexographic printing, and offset printing can be used. Preferably a gas phase process is used. By using the vapor phase process, the first electron injection layer 6 can be reliably secured while preventing the red light emitting layer 5R, the green light emitting layer 5G and the hole injection layer 4B and the first electron injection layer 6 from dissolving. Can be formed.

[5] Next, the hole blocking layer 7 is formed on the first electron injection layer 6.
As a method for forming the hole blocking layer 7, a vapor phase process or a liquid phase process can be used as in the method for forming the first electron injection layer 6. Among them, it is preferable to use a vapor phase process. By using the vapor phase process, the hole blocking layer 7 can be reliably formed while preventing layer dissolution with the first electron injection layer 6.

[6] Next, the hole transport layer 8 is formed on the hole blocking layer 7 by using a vapor phase process or a liquid phase process.
[7] Next, the blue light emitting layer 5 </ b> B is formed on the hole transport layer 8.
As a method for forming the blue light emitting layer 5B, a vapor phase process or a liquid phase process can be used as in the method for forming the first electron injection layer 6, and among these, a vapor phase process is preferably used. By using a vapor phase process, the blue light emitting layer 5B can be reliably formed while preventing layer dissolution with the hole transport layer 8.

[8] Next, the electron transport layer 10 is formed on the blue light emitting layer 5B.
As a method for forming the electron transport layer 10, a vapor phase process or a liquid phase process can be used as in the method for forming the first electron injection layer 6. Among them, it is preferable to use a vapor phase process. By using the vapor phase process, it is possible to reliably form the electron transport layer 10 while preventing layer dissolution with the blue light emitting layer 5B.

[9] Next, the second electron injection layer 11 is formed on the electron transport layer 10.
As a method for forming the second electron injection layer 11, a vapor phase process or a liquid phase process can be used as in the method for forming the first electron injection layer 6. Of these, it is preferable to use a gas phase process. By using a vapor phase process, it is possible to reliably form the second electron injection layer 11 while preventing layer dissolution with the electron transport layer 10.

[10] Next, the cathode 12 is formed on the second electron injection layer 11.
As a method for forming the cathode 12, a vapor phase process or a liquid phase process can be used as in the method for forming the first electron injection layer 6, and among these, a vapor phase process is preferably used. By using the vapor phase process, it is possible to reliably form the cathode 12 while preventing layer dissolution with the second electron injection layer 11.
The light emitting device 1 is obtained as described above. In addition, after formation of the cathode 12, you may perform a sealing process using sealing resin like an epoxy resin, a sealing substrate, etc. as needed.

Second Embodiment
Next, a second embodiment of the present invention will be described.
FIG. 2 is a schematic cross-sectional view showing a schematic configuration of the light emitting device according to the second embodiment of the present invention.
Hereinafter, the light emitting device of the second embodiment will be described with a focus on differences from the light emitting device of the above-described embodiment, and the description of the same matters will be omitted.

The light emitting device 1A of the second embodiment is substantially the same as the light emitting device 1 of the first embodiment except that the hole transport layer between the hole blocking layer and the blue light emitting layer is omitted. In addition, the same code | symbol is attached | subjected to the structure similar to embodiment mentioned above.
A light emitting device 1A shown in FIG. 2 includes a substrate 2 and a plurality of light emitting elements (electroluminescence elements) 1AR, 1AG, and 1AB provided on the substrate 2.

In the light emitting device 1A, the light emitting element 1AR includes an anode 3R, a hole injection layer 4R, a red light emission layer 5R, a first electron injection layer 6, a hole blocking layer 7, a blue light emission layer 5B, an electron transport layer 10, and a second. The electron injection layer 11 and the cathode 12 are laminated in this order.
The light emitting element 1AG includes an anode 3G, a hole injection layer 4G, a green light emission layer 5G, a first electron injection layer 6, a hole blocking layer 7, a blue light emission layer 5B, an electron transport layer 10, and a second electron injection layer 11. And the cathode 12 are laminated in this order.

The light emitting element 1AB includes an anode 3B, a hole injection layer 4B, a first electron injection layer 6, a hole blocking layer 7, a blue light emitting layer 5B, an electron transport layer 10, a second electron injection layer 11, and a cathode 12. They are stacked in this order.
Here, the laminate composed of the first electron injection layer 6 and the hole blocking layer 7 constitutes a carrier adjustment layer 9A for adjusting the flow of carriers.
The first electron injection layer 6 of the carrier adjustment layer 9A can be configured in the same manner as the first electron injection layer 6 of the carrier adjustment layer 9 of the first embodiment described above.

  The hole blocking layer 7 of the carrier adjustment layer 9A can be configured in the same manner as the hole blocking layer 7 of the carrier adjustment layer 9 of the first embodiment described above. It is preferably composed of a mixed material including a transport material. Thereby, in the light emitting elements 1R and 1G, the hole blocking layer 7 can effectively retain holes in the red light emitting layer 5R and the green light emitting layer 5G. Moreover, in the light emitting element 1B, the amount of holes injected into the blue light emitting layer 5B can be increased, and the light emission efficiency can be increased.

The hole blocking material included in the mixed material constituting the hole blocking layer 7 of the carrier adjustment layer 9A includes the hole blocking material included in the hole blocking layer 7 of the carrier adjustment layer 9 of the first embodiment described above. Similarly, for example, aluminum complexes such as bis (2methyl-8-quinolinoleate) -4- (phenylphenolate) aluminum (BAlq ₃ ) represented by the formula (21), 2,9 represented by the formula (22) -Phenanthroline derivatives such as dimethyl-4,7-diphenyl-1.10-phenanthroline (BCP), 3- (4-biphenyl) -4-phenyl-5-tertiarybutylphenyl-1 represented by the above formula (23) Triazole derivatives such as 2,4-triazole (TAZ) can be used.

Moreover, as a hole transport material contained in the mixed material which comprises the hole block layer 7 of the carrier adjustment layer 9A, for example, N, N′-diphenyl-N, N′-di represented by the above formula (8) is used. Amine compounds such as (m-tolyl) -benzidine (TPD) and benzidine derivatives such as bis [N- (1-naphthyl) -N-phenyl] benzidine (α-NPD) represented by the following formula (9) Can be mentioned.
The hole blocking layer 7 made of such a mixed material can be formed, for example, by co-evaporating a hole blocking material and a hole transporting material using a vacuum evaporation method.
The mixing ratio of the hole transport material to the hole blocking material in the hole blocking layer 7 is preferably about 0.1% to 50% by weight.

Even with the light emitting device 1A of the second embodiment as described above, the blue light emitting layer 5B of the light emitting element 1AB is preferably made to emit light, and the desired layer and the red light emitting layer 5R are selectively or dominant in the light emitting element 1AR. Can emit light. Similarly, while the blue light emitting layer 5B of the light emitting element 1AB is preferably made to emit light, the green light emitting layer 5G can be selectively or dominantly emitted in the light emitting element 1AG.
The light emitting devices 1 and 1A as described above can be incorporated in a display device (display device).

(Display device)
Next, an example of a display device to which the display device of the present invention is applied will be described. Hereinafter, an example of a display device incorporating the above-described light-emitting device 1 will be described, but the description of the same configuration as the light-emitting device 1 will be omitted.
FIG. 3 is a longitudinal sectional view showing an embodiment of a display device to which the display device of the present invention is applied.

The display device 100 shown in FIG. 3 includes a substrate 21, a plurality of light emitting elements 1R, 1G, and 1B and a plurality of driving transistors 24 provided corresponding to the subpixels 100R, 100G, and 100B.
In the present embodiment, the display device 100 is a bottom emission structure display panel that transmits light R, G, B from each light emitting element 1R, 1G, 1B from the substrate 21 side.

A plurality of driving transistors 24 are provided on the substrate 21, and a planarizing layer 22 made of an insulating material is formed so as to cover these driving transistors 24.
Each driving transistor 24 includes a semiconductor layer 241 made of a semiconductor material such as silicon, a gate insulating layer 242 formed on the semiconductor layer 241, a gate electrode 243 formed on the gate insulating layer 242, and a source electrode 244. And a drain electrode 245.

On the planarizing layer 22, light emitting elements (organic EL elements) 1 R, 1 G, and 1 B are provided corresponding to the driving transistors 24.
A partition wall 31 is provided between adjacent ones of the light emitting elements 1R, 1G, and 1B having such a configuration.
In the present embodiment, in the light emitting elements 1R, 1G, and 1B, the anodes 3R, 3G, and 3B, the hole injection layers 4R, 4G, and 4B, the red light emitting layer 5R, and the green light emitting layer 5G are individually separated by the partition walls 31. Is provided.

Here, the anodes 3R, 3G, and 3B each constitute a pixel electrode (individual electrode), and the cathode 12 constitutes a common electrode. The anodes 3R, 3G, and 3B of the light emitting elements 1R, 1G, and 1B are electrically connected to the drain electrode 245 of each driving transistor 24 by a conductive portion (wiring) 27.
Further, in the present embodiment, an epoxy layer 35 made of an epoxy resin is formed on the light emitting elements 1R, 1G, and 1B so as to cover them.

The sealing substrate 20 is provided on the epoxy layer 35 so as to cover it. Thereby, since the airtightness of the light emitting elements 1R, 1G, and 1B is secured and the intrusion of oxygen and moisture can be prevented, the reliability of the light emitting elements 1R, 1G, and 1B can be improved.
The display device 100 as described above can perform full color display by emitting light by combining the light emitting elements 1R, 1G, and 1B.

According to such a display device 100, since the light emitting device 1 as described above is provided, the display device 100 has excellent reliability.
Such a display device 100 (the display device of the present invention) can be incorporated into various electronic devices. Since such an electronic apparatus includes the light emitting device 1 as described above, it has excellent reliability.

FIG. 4 is a perspective view showing a configuration of a mobile (or notebook) personal computer to which the electronic apparatus of the present invention is applied.
In this figure, a personal computer 1100 includes a main body 1104 provided with a keyboard 1102 and a display unit 1106 provided with a display. The display unit 1106 is rotatable with respect to the main body 1104 via a hinge structure. It is supported by.
In the personal computer 1100, the display unit included in the display unit 1106 is configured by the display device 100 described above.

FIG. 5 is a perspective view showing a configuration of a mobile phone (including PHS) to which the electronic apparatus of the present invention is applied.
In this figure, a cellular phone 1200 includes a plurality of operation buttons 1202, an earpiece 1204 and a mouthpiece 1206, and a display unit.
In the cellular phone 1200, the display unit is configured by the display device 100 described above.

FIG. 6 is a perspective view showing the configuration of a digital still camera to which the electronic apparatus of the present invention is applied. In this figure, connection with an external device is also simply shown.
Here, an ordinary camera sensitizes a silver halide photographic film with a light image of a subject, whereas a digital still camera 1300 photoelectrically converts a light image of a subject with an imaging device such as a CCD (Charge Coupled Device). An imaging signal (image signal) is generated.

A display unit is provided on the back of a case (body) 1302 in the digital still camera 1300, and is configured to display based on an imaging signal from the CCD, and functions as a finder that displays an object as an electronic image.
In the digital still camera 1300, the display unit is configured by the display device 100 described above.

A circuit board 1308 is installed inside the case. The circuit board 1308 is provided with a memory that can store (store) an imaging signal.
A light receiving unit 1304 including an optical lens (imaging optical system), a CCD, and the like is provided on the front side of the case 1302 (on the back side in the illustrated configuration).
When the photographer confirms the subject image displayed on the display unit and presses the shutter button 1306, the CCD image pickup signal at that time is transferred and stored in the memory of the circuit board 1308.

  In the digital still camera 1300, a video signal output terminal 1312 and an input / output terminal 1314 for data communication are provided on the side surface of the case 1302. As shown in the figure, a television monitor 1430 is connected to the video signal output terminal 1312 and a personal computer 1440 is connected to the data communication input / output terminal 1314 as necessary. Further, the imaging signal stored in the memory of the circuit board 1308 is output to the television monitor 1430 or the personal computer 1440 by a predetermined operation.

  In addition to the personal computer (mobile personal computer) in FIG. 4, the mobile phone in FIG. 5, and the digital still camera in FIG. 6, the electronic apparatus of the present invention includes, for example, a television, a video camera, a viewfinder type, Monitor direct-view video tape recorder, laptop personal computer, car navigation system, pager, electronic notebook (including communication function), electronic dictionary, calculator, electronic game device, word processor, workstation, video phone, security TV Monitors, electronic binoculars, POS terminals, devices equipped with touch panels (for example, cash dispensers and automatic ticket vending machines for financial institutions), medical devices (for example, electronic thermometers, blood pressure monitors, blood glucose meters, electrocardiographs, ultrasound diagnostic devices, internal Endoscope display device), fish finder, various measuring instruments, Vessels such (e.g., gages for vehicles, aircraft, ships), a flight simulator, various monitors, and a projection display such as a projector.

Although the light emitting device, the display device, and the electronic apparatus of the present invention have been described based on the illustrated embodiments, the present invention is not limited to these.
For example, in the above-described embodiment, the case where the light-emitting device includes a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer has been described as an example. However, the light emission color of the light-emitting layer is not limited thereto, Other colors may be used.

Next, specific examples of the present invention will be described.
1. Manufacturing of light emitting device (Example)
<1> First, a transparent glass substrate having an average thickness of 1.0 mm was prepared. Next, an ITO film having an average thickness of 50 nm is formed on the substrate by sputtering, and then the ITO film is patterned by using a photolithography method to correspond to the R pixel, G pixel, and B pixel. Three anodes (individual electrodes) were formed.

<2> Next, partition walls (banks) made of acrylic resin were formed so that the anodes were exposed and the anodes were separated from each other.
Then, the surface of each anode and the surface of the partition wall (including the wall surface) were made lyophilic (hydrophilic) by plasma treatment using O ₂ gas as the treatment gas. Then, by plasma processing using CF ₄ gas as the processing gas, by reacting CF ₄ gas only on the surface of the partition walls made of an acrylic resin, a surface of the partition wall and lyophobic (Bachimizuka).

<3> Next, a 1.0 wt% PEDOT / PSS aqueous dispersion is applied onto each anode by an inkjet method, and the applied dispersion is dried and baked, whereby holes having an average thickness of 50 nm. An injection layer was formed.
<4> Next, on the hole injection layer corresponding to the R pixel, a 1.2 wt% tetramethylbenzene solution of the compound represented by the formula (6) (high molecular weight material) was applied by an inkjet method. Further, a 1.2 wt% tetramethylbenzene solution of the compound represented by the formula (19) (high molecular weight material) was applied onto the hole injection layer corresponding to the G pixel by an inkjet method. Then, each of the applied solutions was dried and baked to form a light emitting layer (red light emitting layer and green light emitting layer) having an average thickness of 60 nm.

<5> Next, on the red light-emitting layer, the green light-emitting layer, and the hole injection layer corresponding to the B pixel, a film was formed by vacuum evaporation using Cs ₂ CO ₃ as an evaporation source by vacuum evaporation. A first electron injection layer having a thickness of 0.5 nm was formed.
<6> Next, bis (2methyl-8-quinolinoleate) -4- (phenylphenolate) aluminum (BAlq ₃ ) represented by the formula (21) is formed on the first electron injection layer by a vacuum deposition method. A hole blocking layer having an average thickness of 10 nm was formed.

<7> Next, an α-NPD film was formed on the hole blocking layer by a vacuum deposition method to form a hole transport layer having an average thickness of 10 nm.
<8> Next, on the hole transport layer, a blue light emitting layer having an average thickness of 20 nm composed of the following mixed material was formed by co-evaporation using a vacuum deposition method.
Here, as a constituent material (mixed material) of the blue light emitting layer, a compound represented by the above formula (9) was used as a host material, and a compound represented by the above formula (11) was used as a guest material. The content (dope concentration) of the guest material (dopant) in the blue light emitting layer was 5.0% by weight with respect to the host material.

<9> Next, on the blue light-emitting layer, tris (8-quinolinolato) aluminum (Alq ₃ ) was formed by a vacuum deposition method to form an electron transport layer having an average thickness of 20 nm.
<10> Next, on the electron transport layer, lithium fluoride (LiF) was formed into a film by a vacuum evaporation method to form an electron injection layer having an average thickness of 1.0 nm.
<11> Next, Al was formed into a film by the vacuum evaporation method on the electron injection layer. Thereby, a cathode having an average thickness of 200 nm made of Al was formed.

<12> Next, a glass protective cover (sealing member) was placed over the formed layers, and fixed and sealed with an epoxy resin.
Through the above steps, a bottom emission structure light emitting device having a layer structure as shown in FIG. 1 was manufactured.
(Comparative example)
A light emitting device was manufactured in the same manner as in the above-described example except that the formation of the first electron injection layer and the hole blocking layer was omitted.

2. Evaluation Regarding the light-emitting elements of the light-emitting devices of Examples and Comparative Examples, a constant current was passed through the light-emitting elements so that the luminance was 10 cd / m ^2, and the emission color was visually observed at this time.
The results are shown in Table 1.

As is clear from Table 1, in the light emitting device of the example, the light emitting element of each pixel emitted light in a desired color. That is, the light emitting element corresponding to the R pixel emits red light, the light emitting element corresponding to the G pixel emits green light, and the light emitting element corresponding to the B pixel emits blue light. This is because, in the light emitting elements of the R pixel and the G pixel, holes are blocked by the hole blocking function of the hole blocking layer and pass through the red light emitting layer and the green light emitting layer without reaching the blue light emitting layer. While the holes remain in the red light emitting layer and the green light emitting layer, on the other hand, in the B pixel light emitting element, the hole blocking function of the hole blocking layer is relaxed and the hole transporting property of the hole blocking layer is suitably expressed. This is probably because holes reached the blue light emitting layer.
On the other hand, in the light emitting device of the comparative example, the light emitting element of any pixel emitted blue light, and a desired light emitting color could not be obtained in the light emitting elements of the R pixel and the G pixel. This is considered to be because in the light emitting elements of the R pixel and the G pixel, the holes that have passed through the red light emitting layer and the green light emitting layer reach the blue light emitting layer, and the blue light emitting layer emits light.

DESCRIPTION OF SYMBOLS 1 ... Light emitting device 1A ... Light emitting device 1AR ... Light emitting element 1AG ... Light emitting element 1AB ... Light emitting element 1R ... Light emitting element 1G ... Light emitting element 1B ... Light emitting element 2 ... Substrate 3R ... Anode 3G ... ... Anode 3B ... Anode 4R ... Hole injection layer 4G ... Hole injection layer 4B ... Hole injection layer 5R ... Red emission layer 5G ... Green emission layer 5B, 5BR, 5BG, 5BB ... Blue emission Layer 6, 6R, 6G, 6B ... 1st electron injection layer 7, 7R, 7G, 7B ... Hole blocking layer 8, 8R, 8G, 8B ... Hole transport layer 9 ... Carrier adjustment layer 9A ... Carrier adjustment layer 10, 10R, 10G, 10B ... Electron transport layer 11, 11R, 11G, 11B ... Second electron injection layer 12, 12R, 12G, 12B ... Cathode 20 ... Sealing substrate 21 ... Substrate 22 ...... Flattening 24 ... Driving transistor 31 ... Partition 35 ... Epoxy layer 100 ... Display device 100R, 100G, 100B ... Sub-pixel 241 ... Semiconductor layer 242 ... Gate insulating layer 243 ... Gate electrode 244 ... Source electrode 245 ... Drain electrode 1100 ... Personal computer 1102 ... Keyboard 1104 ... Main unit 1106 ... Display unit 1200 ... Mobile phone 1202 ... Operation buttons 1204 ... Earpiece 1206 ... Mouthpiece 1300 ... Digital still Camera 1302 ... Case 1304 ... Light receiving unit 1306 ... Shutter button 1308 ... Circuit board 1312 ... Video signal output terminal 1314 ... Input / output terminal 1430 ... Television monitor 1440 ... Personal computer Data R, G, B ... light

Claims (13)

A light-emitting device having a first light-emitting element and a second light-emitting element that emit light of different colors,
The first light emitting element includes:
A first anode;
A first cathode;
A first light-emitting layer provided between the first anode and the first cathode and having a function of emitting light in a first color;
A non-light emitting layer provided between the first cathode and the first light emitting layer and having a function of emitting light in a second color different from the first color;
A first carrier adjustment layer provided between the first light emitting layer and the non-light emitting layer and configured to include a hole blocking material and a hole transporting material;
The second light emitting element is:
A second anode;
A second cathode;
A second light-emitting layer provided between the second anode and the second cathode and having a function of emitting light in the second color;
A second carrier adjustment layer provided between the second light emitting layer and the second anode and configured to include a hole blocking material and a hole transporting material ;
The first carrier adjustment layer is provided between the first hole blocking layer configured to include the hole blocking material, the first hole blocking layer, and the non-light emitting layer, A first hole transport layer configured to include a hole transport material,
The second carrier adjustment layer is provided between the second hole blocking layer configured to include the hole blocking material, and the second hole blocking layer and the second light emitting layer. And a second hole transport layer configured to contain the hole transport material . It said first hole blocking layer and the second hole blocking layer, respectively, the light emitting device according to claim 1, which consists of mixed material containing the hole blocking material and the hole transport material. The second light emitting element is:
The light emitting device according to claim 1 or 2 comprising a hole injection layer provided between said second anode and said second carrier adjusting layer. The first carrier adjustment layer has a first electron injection layer provided between the first hole blocking layer and the first light emitting layer,
The light emitting device according to claim 3 , wherein the second carrier adjustment layer has a second electron injection layer provided between the second hole blocking layer and the hole injection layer. The hole blocking material, light-emitting device according to any one of claims 1 to 4 having a deep HOMO level than the HOMO level of the material of the first emitting layer. The light emitting device according to claim 5 , wherein the hole blocking material has a band gap wider than a band gap of a constituent material of the first light emitting layer. The first color is red or green, the second color, the light emitting device according to any one of claims 1 to blue 6. The non-light-emitting layer, the light emitting device according to any one of claims 1 to 7 is provided with said integrally with the second light-emitting layer. The first light-emitting layer has been formed by a liquid phase process, the non-light-emitting layer and the second light-emitting layer, light emission of claim 8 by a vapor phase process are those which are formed collectively apparatus. The first carrier adjustment layer, the light emitting device according to any one of the second carrier adjusting layer and the claims 1 is provided integrally 9. The light emitting device according to claim 10 , wherein the first carrier adjustment layer and the second carrier adjustment layer are collectively formed by a gas phase process. Display apparatus comprising: a light-emitting device according to any one of claims 1 to 11. An electronic apparatus comprising: a light-emitting device according to any one of claims 1 to 11.

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